Processing method of plastic base material

Abstract

The processing method of the plastic base material comprises the following steps: providing a polyurethane monomer gas; depositing a diamond-like carbon layer on the surface of the plastic base material in the vacuum chamber; and introducing the polyurethane monomer gas into the vacuum chamber, and doping a polyurethane monomer on the diamond-like carbon layer by adopting a plasma polymerization deposition technology. The method is simple and easy to implement, low in cost and capable of forming the hole-sealable film layer on the surface of the plastic base material, so that the performance of the diamond-like carbon layer located on the lower layer is improved, and the service life is prolonged.

Description

Technical Field

[0001] The present invention relates to the field of coating, and particularly to a processing method for plastic substrates. Background Art

[0002] In many fields such as food and pharmaceuticals, plastic containers are usually used as packaging containers, which have many advantages such as light weight, soft texture, easy forming, easy packaging, and convenient carrying. However, plastics allow low-molecular substances such as oxygen and carbon dioxide to pass through, and are prone to absorb and adsorb organic compounds. For example, plastic bottled beverages will be oxidized by the infiltrated oxygen molecules, which will not only cause changes in taste, but also affect people's physical health. CN00807740.1 provides a method of depositing diamond-like carbon (DLC) film to block oxygen molecules to solve the above problems. However, the DLC film has high hardness and is prone to embrittlement and peeling, and cannot adapt to the soft texture of plastic containers.

[0003] Therefore, it is necessary to provide a processing method for plastic substrates to overcome the above defects. Summary of the Invention

[0004] The purpose of the present invention is to provide an improved processing method for plastic substrates, which is simple and easy to operate, has low cost, can form a sealable film layer on the surface of the plastic substrate, thereby improving the performance of the diamond-like carbon layer located below and extending the service life.

[0005] To achieve the above purpose, the processing method for plastic substrates of the present invention includes the following steps:

[0006] Providing a polyurethane monomer gas;

[0007] Depositing a diamond-like carbon layer on the surface of the plastic substrate in a vacuum chamber; and

[0008] Introducing the polyurethane monomer gas into the vacuum chamber, and doping the polyurethane monomer on the diamond-like carbon layer by using plasma polymerization deposition technology.

[0009] Compared with the prior art, in the processing method for plastic substrates of the present invention, after depositing a diamond-like carbon layer on the surface of the plastic substrate, the polyurethane monomer gas is introduced, and then the polyurethane monomer is doped on the diamond-like carbon layer by using plasma polymerization deposition technology. The vaporized polyurethane is mutually doped with the diamond-like carbon layer. The advantage of this is that a sealable film layer can be deposited on the surface of the diamond-like carbon layer, thereby improving the performance of the diamond-like carbon layer. For example, to a certain extent, the rigidity of the diamond-like carbon layer is reduced, its embrittlement is prevented, its flexibility is improved, and the film body is prevented from falling off, thereby extending the service life of the product.

[0010] Preferably, the step of providing the polyurethane monomer gas includes: heating the polyurethane monomer to 130-180 °C to form a gas state.

[0011] Preferably, the step of depositing the diamond-like carbon layer includes: controlling the air pressure in the vacuum chamber to be 3×10 -2 to 3.5×10 -2 Pa, adjusting the bias voltage of the plastic substrate to 20 - 30V, and setting the current of the graphite target to 1.5 - 3.0A.

[0012] Preferably, the step of depositing the diamond-like carbon layer further includes: controlling the plastic substrate to rotate on the rotating rack at a rotation speed of 30 - 60 rpm.

[0013] Preferably, the step of doping the polyurethane monomer on the diamond-like carbon layer includes: adjusting the air pressure in the vacuum chamber to 5×10 -2 to 50×10 -2 Pa, controlling the working voltage applied to the ion beam to be greater than 800V, the working current to be 300 - 500 mA, and the pulsed bias voltage applied to the plastic substrate to be greater than 500V.

[0014] Preferably, the step of doping the polyurethane monomer on the diamond-like carbon layer further includes: the doping time is 20 - 30 minutes, and the doping thickness is 15 - 20 nm. Detailed implementation manners

[0015] To make the above objects, features, and advantages of the present application more obvious and understandable, the following describes the detailed implementation manners of the present application in combination with some embodiments. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0016] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present application.

[0017] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of this application, "a plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0018] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation.

[0019] The processing method of the plastic substrate of the present invention will be further described below in conjunction with embodiments, but the present invention is not limited thereby. The method of the present invention aims to provide a processing method of a plastic substrate, which can form a sealable film layer on the surface of the plastic substrate, thereby improving the performance of the diamond-like carbon layer located in the lower layer and extending the service life.

[0020] In an embodiment of the processing method of the plastic substrate of the present invention, the following steps are included:

[0021] Provide polyurethane monomer gas;

[0022] In a vacuum chamber, deposit a diamond-like carbon layer on the surface of the plastic substrate; and

[0023] Introduce the polyurethane monomer gas into the vacuum chamber, and dope the polyurethane monomer on the diamond-like carbon layer by plasma polymerization deposition technology.

[0024] In the processing method of the plastic substrate of the present invention, after depositing a diamond-like carbon layer on the surface of the plastic substrate, introduce the polyurethane monomer gas, and then dope the polyurethane monomer on the diamond-like carbon layer by plasma polymerization deposition technology. The vaporized polyurethane is doped with the diamond-like carbon layer. The advantage of this is that a sealable film layer can be deposited on the surface of the diamond-like carbon layer, thereby improving the performance of the diamond-like carbon layer. For example, to a certain extent, it reduces the rigidity of the diamond-like carbon layer, prevents it from cracking, improves flexibility, and prevents the film body from falling off, thereby extending the service life of the product.

[0025] Specifically, in the present invention, polyurethane monomer gas can be provided in advance to prepare for subsequent doping. Of course, the polyurethane monomer gas can also be prepared after the deposition of the diamond-like carbon layer. Specifically, the step of providing the polyurethane monomer gas includes: first, putting the polyurethane monomer into a heating tank, raising the temperature to 130°C - 180°C to make it gaseous.

[0026] Next, deposit a diamond-like carbon layer on the surface of the plastic substrate. Specifically, control the internal air pressure of the vacuum chamber to be 3×10 -2 to 3.5×10 -2 Pa, adjust the bias voltage of the plastic substrate to 20V - 30V, and set the current of the high-purity graphite target to 1.5A - 3.0A. Preferably, the plastic substrate rotates on a rotating rack at a speed of 30 - 60 rpm.

[0027] Meanwhile, introduce the gaseous polyurethane monomer into the vacuum chamber using a hydrocarbon gas. At this time, the flow rate of the polyurethane monomer is 20 sccm - 30 sccm. After introducing the polyurethane monomer gas, adjust the air pressure in the vacuum reaction chamber to 5×10 -2 to 50×10 -2 Pa. At this time, the working voltage applied to the ion beam is greater than 800V, the working current is 300 - 500 mA, a pulsed bias voltage greater than 500V is applied to the workpiece, and the deposition time is 20 - 30 minutes. Thus, the thickness of the polyurethane monomer doped on the diamond-like carbon layer is 15 - 20 nm. By such a method, a sealable film layer, that is, a polyurethane monomer layer, can be deposited on the surface of the diamond-like carbon layer, thereby improving the performance of the underlying diamond-like carbon layer. For example, to a certain extent, it reduces the rigidity of the diamond-like carbon layer, prevents its brittle fracture, improves flexibility, prevents the film body from falling off, and thus extends the service life of the plastic product.

[0028] In summary, after depositing a diamond-like carbon layer on the surface of the plastic substrate in the present invention, introduce the polyurethane monomer gas, and then use plasma polymerization deposition technology to dope the polyurethane monomer on the diamond-like carbon layer. The vaporized polyurethane and the diamond-like carbon layer are mutually doped. The advantage of this is that a sealable film layer can be deposited on the surface of the diamond-like carbon layer, thereby improving the performance of the diamond-like carbon layer. For example, to a certain extent, it reduces the rigidity of the diamond-like carbon layer, prevents its brittle fracture, improves flexibility, prevents the film body from falling off, and thus extends the service life of the product.

[0029] The above-disclosed are only the preferred embodiments of the present invention. Of course, the scope of the rights of the present invention cannot be limited thereby. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A processing method for a plastic substrate, characterized in that, it comprises the following steps: providing a polyurethane monomer gas; depositing a diamond-like carbon layer on the surface of the plastic substrate in a vacuum chamber; and introducing the polyurethane monomer gas into the vacuum chamber, and doping the polyurethane monomer on the diamond-like carbon layer by using plasma polymerization deposition technology.

2. The processing method for a plastic substrate according to claim 1, characterized in that, the step of providing the polyurethane monomer gas comprises: heating the polyurethane monomer to 130 - 180 °C to form a gaseous state.

3. The processing method for a plastic substrate according to claim 1, characterized in that, The steps of depositing the diamond-like carbon layer include: controlling the air pressure in the vacuum chamber to be 3×10 -2 to 3.5×10 -2 Pa, adjusting the bias voltage of the plastic substrate to 20 - 30V, and setting the current of the graphite target to 1.5 - 3.0A.

4. The processing method for a plastic substrate according to claim 3, characterized in that, the step of depositing the diamond-like carbon layer further comprises: controlling the rotation of the plastic substrate on a rotating rack at a rotation speed of 30 - 60 rpm.

5. The processing method for a plastic substrate according to claim 1, characterized in that, The step of doping polyurethane monomers on the diamond-like carbon layer includes: adjusting the air pressure in the vacuum chamber to 5×10 -2 to 50×10 -2 Pa, controlling the working voltage applied to the ion beam to be greater than 800V, the working current to be 300 - 500mA, and the pulse bias voltage applied to the plastic substrate to be greater than 500V.

6. The processing method for a plastic substrate according to claim 5, characterized in that, the step of doping the polyurethane monomer on the diamond-like carbon layer further comprises: the doping time is 20 - 30 minutes, and the doping thickness is 15 - 20 nm.