Patterning method of blue nickel-doped indium phosphide quantum dots

Abstract

The invention relates to the technical field of light-emitting display, in particular to a patterning method of blue nickel-doped indium phosphide quantum dots, which comprises the following steps: preparing a shell zinc precursor solution and a sulfur-trioctylphosphine solution; carrying out synthesis of the InP / InNiP quantum dots; according to the method, the photoelectric property of the InP QDs is explored through nickel single element doping, and the FWHM of the quantum dots is remarkably reduced by carefully controlling the doping process and synthesis conditions. Ni doping has a positive effect on the PL performance of the InP QDs. The size uniformity of the quantum dots can be improved, so that the size of the quantum dots is more uniform; according to the method, the material utilization rate is high, patterning can be achieved without using a mask plate, fine quantum dot pattern control is achieved through ink-jet printing, high-precision imaging is achieved through a low-cost means, and high-precision ink-jet printing quantum dot imaging is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of light-emitting displays, and particularly to a patterning method for blue nickel-doped indium phosphide quantum dots. Background Art

[0002] With the rapid development of science and technology, display technology, as the key to information dissemination and human-computer interaction, has been continuously innovating. The emerging technology of quantum dot light-emitting diodes (QLEDs) has attracted extensive attention in the scientific and industrial communities. It has advantages such as low energy consumption, high color purity, strong reliability, and high flexibility, which not only meet the energy-saving requirements but also can present vivid colors, ensure long-term stable use, and are suitable for fields such as wearable and flexible displays. With the development of materials and devices, the key performance index - external quantum efficiency (EQEs) of some QLEDs has been significantly improved and has exceeded 20%.

[0003] Colloidal quantum dots (QDs) play a key role in determining the performance of QLEDs. The most mature colloidal quantum dots currently are cadmium (Cd)-based quantum dots. However, due to the chemical toxicity of the Cd element, its application in consumer electronics in most developed countries is strictly restricted. The European Union limits the Cd content to within 100 ppm, and this toxicity limit has prompted researchers to actively explore non-toxic or low-toxic materials to promote the sustainable development of QLED technology. In addition, perovskite quantum dots have also received much attention in the exploration of QLEDs because of their advantages such as a quantum yield (QY) of about 100%, a full width at half maximum (FWHM) of about 20 nm, and low cost. However, perovskite quantum dots also face their own problems, such as poor stability and containing heavy metals such as lead.

[0004] Indium phosphide (InP) quantum dots have unique advantages, with a relatively high photoluminescence quantum yield (PLQY) and a relatively large Bohr radius (about 10 nm). Due to the quantum confinement effect, the emission wavelength of InP quantum dots can be adjusted to cover the visible light to near-infrared region, laying a good foundation for precise color regulation. In the fields of quantum dots and LEDs, significant progress has been made in InP-based QLEDs. In particular, the peak EQE of red InP QLEDs has reached 21.4%, which is a very high value and is comparable to the most advanced Cd-based QLEDs. Recently, significant breakthroughs have also been made in the research of green InP QLEDs, and the performance indicators have been greatly improved. The EQEs of these green InP QLEDs have reached 26.8%, and the brightness exceeds 270000 cd / m 2 Moreover, at an initial brightness of 1000 cd / m 2When the T95 lifetime reached 1241 hours, a new world record was set, highlighting the great potential of InP quantum dot technology in display applications. These results indicate that InP-based QLEDs are now comparable to mature small molecule organic light-emitting diodes (OLEDs) and Cd-based QLEDs in terms of efficiency and operating lifetime, providing broad prospects for the future of display technology. However, for blue InP QDs, their color purity, photoluminescence quantum yield (PLQY) of blue light is different from that of green and red quantum dots, and their stability also needs to be improved. With the in-depth research, great progress has been made in blue InP QDs. In 2020, Zhang et al. adopted the shell engineering method, introduced a GaP bridging layer and extended the growth time of the ZnS shell, and successfully synthesized InP / GaP / ZnS / / ZnS QDs with a PLQY of about 81% and good stability. The QLED device prepared based on this had a brightness as high as 3120 cd·m -2 , an EQE of 1.01%, providing an important reference for the application of blue InP QDs in high-performance light-emitting devices. In 2022, Zhang et al. used ZnBr 2 as a precursor and passivated the surface with Br-. After optimizing the synthesis process, the obtained InP / ZnS / ZnS QDs had a PLQY as high as 93%. By replacing the long-chain ligand DDT with the short-chain ligand OT, the current density of the QLED device at 6V increased from 46 mA / cm 2 to 101 mA / cm 2, the EQE increased from 1.8% to 2.6%, opening up a new way for the performance improvement of blue InP QLEDs. In the same year, Yang et al. proposed a two-step heating and thick shell layer strategy. The prepared blue InP / ZnS / ZnS QDs had a PL peak at 465 nm, an FWHM of 38 nm, a PLQY as high as about 96%, and a size of 10.6 nm. The EL emission peak of the pixelated blue InP QLED prepared by this technology was at 472 nm, the FWHM was 43 nm, the maximum brightness was 91 cd·m-2, and the EQE was 0.15%, which promoted the development of inkjet-printed blue InP QLEDs. Currently, the performance of blue quantum dots mainly focuses on sky-blue light emission (465 - 480 nm). However, for deep blue quantum dots (450 - 465 nm), further optimization is still needed. In previous studies, although the tunable deep blue light emission of InP QDs from 478 nm to 447 nm was achieved by using a double doping strategy of gallium (Ga) and zinc (Zn). In particular, the quantum dots with an emission wavelength of 457 nm obtained a PLQY of 84%. However, the FWHM was still relatively wide. This indicates that although certain progress has been made in achieving deep blue light emission and a relatively high PLQY, there is still room for improvement in the spectral linewidth. Synthesizing deep blue quantum dots with a narrower FWHM, a higher PLQY, and better stability remains a challenging task. The main reason for these problems is that InP has a relatively small bulk bandgap (1.35 eV). In order to produce InP quantum dots with narrow-band blue light emission, the size of the InP atomic nucleus needs to be very small (less than 2 nm). Such a small size brings many difficulties to the synthesis process, especially in the nucleation / growth and effective shelling stages, and the synthesis control becomes extremely complex. Due to the uneven size distribution and surface defects, the FWHM of InP quantum dots is wide and the PLQY is low, severely restricting the application of blue InP quantum dots in high-performance QLEDs. To overcome these problems, researchers have adopted various methods to improve the performance of InP QDs. Doping is an effective strategy to enhance the performance of quantum dots. Ga doping can achieve blue light emission of InGaP quantum dots. For example, Kim et al. synthesized blue InGaP quantum dots by changing the amount of GaI 3 to adjust the degree of Ga alloying. Its emission wavelength was between 465–475 nm, and the FWHM was about 45 nm, but the FWHM was still large. Zn doping can form InZnP alloys, shrink the lattice, and expand the bandgap, which is beneficial to blue light emission and improve the PLQY. Zhou et al. used a highly active zinc precursor during the nucleation process to form InZnP alloy quantum dots, expanded the bandgap, improved the size distribution, and achieved blue InP QDs with an FWHM of 41 nm. In addition, in terms of Cu ion assistance, Huang et al. used Cu 2+ ions and by-product Cu 3 -x P competition in InP nucleation. Although ultra-wide blue light emission at 425 nm was achieved, the linewidth and efficiency were poor, and the PLQY was 25%. In Nd 3+ doping, Qin et al. found that Nd could replace In to form an alloy structure, inhibit the growth of quantum dots in the synthesized blue light-emitting InP / ZnS QDs, regulate the emission wavelength and PLQY, and the emission peak was 470 nm. It can be seen that the effects of different element doping on the performance of InP QDs are complex and diverse, and the research on linewidth optimization is still insufficient. Summary of the Invention

[0005] The purpose of the present invention is to provide a patterning method for blue nickel-doped indium phosphide quantum dots, aiming to achieve precise control of quantum dot patterns through inkjet printing, realize high-precision imaging by low-cost means, and achieve high-precision inkjet printing of quantum dot imaging.

[0006] To achieve the above purpose, the present invention provides a patterning method for blue nickel-doped indium phosphide quantum dots, including the following steps:

[0007] Prepare the outer shell zinc precursor solution and sulfur-trioctylphosphine solution;

[0008] Perform the synthesis of InP / InNiP quantum dots;

[0009] Prepare inkjet printing ink and perform inkjet printing based on the inkjet printing.

[0010] Among them, the specific method for preparing the outer shell zinc precursor solution:

[0011] Weigh 1.5 g of zinc stearate and place it in a 20 ml glass bottle. Add 6 ml of 1-octadecene, and place it in a magnetic stirring and heating device. Continuously stir at a constant temperature of 170 °C until the solution becomes completely clear to obtain the outer shell zinc precursor solution.

[0012] Among them, the specific method for preparing the sulfur-trioctylphosphine solution:

[0013] Weigh 3.3 mmol of sulfur powder, transfer it to a 10 ml pressure-resistant glass bottle, then add 1.5 ml of trioctylphosphine, and place it in a magnetic stirring and heating device. Continuously stir at a constant temperature of 120 °C until the solution becomes completely clear to obtain the sulfur-trioctylphosphine solution.

[0014] Among them, the specific method for preparing the inkjet printing ink:

[0015] Mix n-octane and 1-octadecene in a ratio of 1:1 to obtain a mixed solvent;

[0016] Slowly add the pre-prepared blue light quantum dots into the mixed solvent, and at the same time place it in a magnetic stirrer and continuously stir and disperse until the solution presents a state where each part is uniform and there are no large solid quantum dots, obtaining inkjet printing ink.

[0017] Among them, the specific method of inkjet printing based on the inkjet printing is as follows:

[0018] Open the gas path, software and horizontal camera of the inkjet printing device, adjust the air pressure to negative pressure to prevent the ink from flowing out, filter the quantum dot ink with a 0.45μm filter head, then inject it into the ink cartridge, install the ink cartridge and fix the nozzle, connect the signal line, and adjust the position of the camera so that the nozzle appears in the observation window;

[0019] Slowly increase the air pressure to fill the nozzle with the solution until it sprays out, then reduce the air pressure to negative pressure, and then finely adjust the air pressure valve until stable and tiny droplets are debugged, and analyze the falling speed, diameter and volume of the droplets through the printing program;

[0020] Set the substrate positioning and patterning program, edit the dot matrix or pattern to be printed, fix the cleaned glass substrate in the inkjet printing area, and at the same time set the initial printing position.

[0021] A patterning method of blue nickel-doped indium phosphide quantum dots of the present invention prepares a shell zinc precursor solution and a sulfur-trioctylphosphine solution; synthesizes InP / InNiP quantum dots; prepares inkjet printing ink, and performs inkjet printing based on the inkjet printing. This method explores the optoelectronic properties of InP QDs through single nickel element doping. By carefully controlling the doping process and synthesis conditions, the FWHM of the quantum dots is significantly reduced. Ni doping has a positive effect on the PL performance of InP QDs. It can improve the size uniformity of the quantum dots, making the quantum dot sizes more uniform. At a doping ratio of Ni:In = 1:0.02, the FWHM of InNiP quantum dots is reduced to 38nm, and the prepared InNiP quantum dots reach a PLQY of 90%, and have good stability under double-shell ZnS coating; the material utilization rate is high, and patterning can be achieved without using a mask plate, and at the same time has the characteristics of low cost and can be combined with QLED devices. The inkjet printing method has advantages such as no pressure, non-contact, no need for a mask, and good material compatibility, and is a feasible strategy for realizing large-area flexible display. Through inkjet printing, precise control of quantum dot patterns is achieved, high-precision imaging is realized by means of low cost, and high-precision inkjet printing quantum dot imaging is realized.

[0022] The beneficial effects of this method are:

[0023] By studying the influence of thiols with different carbon chain lengths on quantum dots, it is found that ligands with low-intensity infrared signals such as 1-octanethiol (OT) contribute to improving the PLQY (refer to Figure 4h-j). This is because ligands such as OT form specific surface states on the surface of quantum dots, reducing surface defects and non-radiative recombination centers, thereby improving the optical properties of quantum dots. Based on this, single-element doping is carried out. At a doping ratio of Ni:In = 0.02, its FWHM is as narrow as 38 nm (refer to Figure 6 c, Figure 6 d), which is significantly narrower than other blue InP QDs, effectively improving color purity, enabling a clearer and more accurate blue light image to be presented. In a high-resolution display screen, color aliasing can be reduced, making the image edges sharper and the details more abundant. The quantum yield is as high as 90% (refer to Figure 6 d), with high luminous efficiency. In display applications, it can reduce energy consumption, extend the service life of the device, reduce the need for high-energy input, and lower the driving cost. For example, at the same brightness requirement, the required driving voltage is lower, improving energy utilization efficiency. It has good stability and can still maintain about 75% of the initial PL intensity after 12 days in a nitrogen environment (refer to Figure 11 a), which is comparable to the stability of undoped quantum dots. It can work stably under different environmental conditions, improving the reliability and durability of the display device, and maintaining stable luminous performance whether in high-temperature, high-humidity environments or during long-term use.

[0024] The patterning of quantum dots is achieved by inkjet printing, such as printing a specific logo (refer to Figure 11 b, Figure 11 c). In display technology, it can be used to prepare high-resolution and high-precision pixelated patterns, meeting the accuracy requirements of applications such as high-definition display screens and fine image printing. When manufacturing a high-resolution quantum dot display screen, it can accurately control the position and luminous characteristics of pixel points, achieving an ultra-high pixel density display effect. At the same time, the inkjet printing technology has low cost, simple operation, and high material utilization rate, without the need for a mask plate. When mass-producing quantum dot patterned products, it can effectively reduce production costs, improve production efficiency, enhance the market competitiveness of products, provide the possibility for realizing low-cost and high-resolution display solutions, and promote the popularization and application of display technology in more fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0026] Figure 1 It is a synthesis process diagram of the PL properties of InP quantum dots at different nucleation temperatures and times.

[0027] Figure 2 In Figure (b), it is the UV-vis absorption spectrum of InP quantum dots under the PL properties at different nucleation temperatures and times. In Figure (c), it is the PL spectrum of InP quantum dots under the PL properties at different nucleation temperatures and times. In Figure (d), it is the FWHM-PLQY curve of InP quantum dots under the PL properties at different nucleation temperatures and times.

[0028] Figure 3 In Figure (e), it is the UV-vis absorption spectrum of InP quantum dots under the PL properties at different nucleation times. In Figure (f), it is the PL spectrum of InP quantum dots under the PL properties at different nucleation times. In Figure (g), it is the FWHM-PLQY curve of InP quantum dots under the PL properties at different nucleation times.

[0029] Figure 4 In Figures (h) and (i), they are the FTIR spectra of InP quantum dots modified with different ligands. In Figure (j), it is the FWHM-PLQY curve of InP quantum dots modified with different ligands.

[0030] Figure 5 It is the synthesis process diagram of InNiP / ZnS / ZnS quantum dots under the photophysical properties of InNiP / ZnS / ZnS quantum dots with different Ni:In ratios.

[0031] Figure 6 In Figure (b), it is the UV-vis absorption spectrum of InNiP / ZnS / ZnS quantum dots under the photophysical properties with different Ni:In ratios. In Figure (c), it is the PL spectrum of InNiP / ZnS / ZnS quantum dots under the photophysical properties with different Ni:In ratios. In Figure (d), it is the FWHM-PLQY line graph.

[0032] Figure 7 In Figure (e), it is the XRD pattern of InNiP / ZnS / ZnS quantum dots under the photophysical properties with different Ni:In ratios. In Figure (f), it is the high-resolution XPS spectrum of In3d 3 / 2 and In3d 5 / 2 of InNiP / ZnS / ZnS quantum dots under the photophysical properties with different Ni:In ratios.

[0033] Figure 8 (g) is the Ni2p 1 / 2 spectrum of InNiP / ZnS / ZnS quantum dots under the photophysical properties with different Ni:In ratios.

[0034] Figure 9(h) is the time-resolved photoluminescence (TRPL) decay spectra of InNiP / ZnS / ZnS quantum dots with different Ni∶In ratios, and (i) is the images of 0 / 0.02 / 0.2 / 1 Ni-doped quantum dots under the photophysical properties of InNiP / ZnS / ZnS quantum dots with different Ni∶In ratios.

[0035] Figure 10 are the TEM images and size distribution diagrams of InP / ZnS / ZnS quantum dots with different doping ratios, where (a) Ni:In = 0, (b) Ni:In = 0.02, (c) Ni:In = 0.2, and (d) Ni:In = 1.

[0036] Figure 11 (a) shows the change of the relative PL intensity of quantum dots with time in a nitrogen environment, (b) is the PL Photo printing of the university logo at time 0 days, and (c) is the PL Photo printing of the university logo at time 12 days.

[0037] Figure 12 is the diagram of the regulation and analysis of droplets.

[0038] Figure 13 is the schematic diagram of the regulation interface of the pulsed voltage.

[0039] Figure 14 is the flow chart of a patterning method of blue nickel-doped indium phosphide quantum dots provided by the present invention. Detailed implementation manners

[0040] The embodiments of the present invention will be described in detail below. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present invention, but should not be construed as limiting the present invention.

[0041] Please refer to Figures 1 to 14 , the present invention provides a patterning method of blue nickel-doped indium phosphide quantum dots, including the following steps:

[0042] S1 Prepare the outer shell zinc precursor solution and sulfur-trioctylphosphine solution;

[0043] Specifically, the specific method for preparing the outer shell zinc precursor solution:

[0044] Weigh 1.5 g of zinc stearate and place it in a 20 ml glass bottle. Add 6 ml of 1-octadecene and place it in a magnetic stirring heating device. Continuously stir under the condition of constant temperature at 170 °C until the solution becomes completely clear to obtain the outer shell zinc precursor solution.

[0045] In an embodiment of the present invention, 1.5 g of zinc stearate was accurately weighed and placed in a 20 ml glass bottle, and then 6 ml of 1-octadecene (ODE) was added. The system was placed in a magnetic stirring heating device and continuously stirred under the condition of constant temperature at 170 °C until the solution became completely clear, ensuring that the zinc stearate was fully dissolved in the ODE solvent to form a uniform and stable outer shell zinc precursor solution for subsequent synthesis reactions.

[0046] The specific method for preparing the sulfur-trioctylphosphine solution:

[0047] Weigh 3.3 mmol of sulfur powder, transfer it to a 10 ml pressure-resistant glass bottle, then add 1.5 ml of trioctylphosphine, and place it in a magnetic stirring heating device. Continuously stir under the condition of constant temperature at 120 °C until the solution becomes completely clear to obtain the sulfur-trioctylphosphine solution.

[0048] In an embodiment of the present invention, 3.3 mmol of sulfur (S) powder was accurately weighed and carefully transferred to a 10 ml pressure-resistant glass bottle, and then 1.5 ml of trioctylphosphine (TOP) was added. Place this mixed system in a glass bottle at 120 °C, and place the reaction system in a magnetic stirring heating device. Continuously stir under the condition of constant temperature at 120 °C until the solution becomes completely clear, ensuring that the sulfur (S) powder is fully dissolved in the TOP solvent for subsequent synthesis reactions.

[0049] S2 is used for the synthesis of InP / InNiP quantum dots;

[0050] In an embodiment of the present invention, the synthesis of InP / ZnS / ZnS quantum dots

[0051] Mix 0.34 mmol of InCl 3 and 2.2 mmol of ZnI 2 with 5 ml of OLA in a 50 ml three-necked flask, heat to 130 °C, and degas for 60 min. After injecting nitrogen for 10 min, inject 1.45 ml of a phosphorus precursor solution in which 0.45 ml (DMA) 3 P is dissolved in 1.00 ml of OLA into the precursor solution. Subsequently, heat the mixture to 130 °C and maintain it at this temperature for 150 minutes. Inject 1-octanethiol (0.44 mL, 2.5 mmol) into the reaction solution, heat to 300 °C for 20 min, add 1.5 mL of S-TOP and 6 mL of Zn source solution to the flask. Heat the reaction mixture at 300 °C for 40 minutes. Purify the crude reaction solution three times with hexane and ethanol, and redisperse the purified InP / ZnS / ZnS quantum dots in hexane (the synthesis process can be referred to Figure 1 ).

[0052] Mix 0.34 mmol of InCl3 , NiI 2 (0.0068 mmol, Ni:In = 0.02) and 2.2 mmol ZnI 2 was mixed with 5 ml of OLA in a 50 ml three-necked flask, heated to 130 °C, and degassed for 60 min. After nitrogen was injected for 10 min, 0.45 ml (DMA) 3 P dissolved in 1.00 ml of OLA in 1.45 ml of phosphorus precursor was injected into the precursor solution. Subsequently, the mixture was heated to 130 °C and maintained at this temperature for 150 minutes. 1-Octanethiol (0.44 mL, 2.5 mmol) was injected into the reaction solution, heated to 300 °C for 20 min, 1.5 mL of S-TOP and 6 mL of Zn source solution were added to the flask. The reaction mixture was heated at 300 °C for 40 minutes. The crude reaction solution was purified three times with hexane and ethanol, and the purified Ni:InP / ZnS / ZnS quantum dots were redispersed in hexane (the synthesis process can be referred to Figure 2 ).

[0053] Prepare an inkjet printing ink according to S3 and perform inkjet printing based on the inkjet printing.

[0054] Specifically, the specific method for preparing the inkjet printing ink is as follows:

[0055] Mix n-octane and 1-octadecene in a ratio of 1:1 to obtain a mixed solvent. Slowly add the pre-prepared blue light quantum dots into the mixed solvent, and at the same time place it in a magnetic stirrer and continuously stir and disperse until the solution shows a state where each part is uniform and there are no large solid quantum dots, obtaining an inkjet printing ink.

[0056] In the embodiment of the present invention, first mix n-octane and 1-octadecene (ODE) in a ratio of 1:1, and fully stir to ensure uniform fusion of the two solvents. Subsequently, slowly add the pre-prepared blue light quantum dots into the above mixed solvent, and at the same time place it in a magnetic stirrer and continuously stir to promote the uniform dispersion of the quantum dots in the solvent. By controlling the stirring until the solution shows a state where each part is uniform and there are no large solid quantum dots. Determine how much mixed solvent should be used according to the weight of the solid quantum dots to ensure that the quantum dot concentration in the ink is 50 mg / ml, and the quantum dots are completely dissolved and evenly distributed, and finally an ink suitable for inkjet printing is made.

[0057] The specific method for performing inkjet printing based on the inkjet printing is as follows:

[0058] S031 Open the gas path, software and horizontal camera of the inkjet printing device, adjust the air pressure to negative pressure to prevent the ink from flowing out, filter the quantum dot ink with a 0.45 μm filter head, then inject it into the ink cartridge, install the ink cartridge and fix the nozzle, connect the signal line, and adjust the position of the camera so that the nozzle appears in the observation window;

[0059] Slowly increase the air pressure of S032 to fill the nozzle with the solution until it sprays out, then reduce the air pressure to negative pressure, and then finely adjust the air pressure valve until stable and tiny droplets are debugged. Analyze the falling speed, diameter, and volume of the droplets through the printing program;

[0060] In the embodiment of the present invention, adjusting the pulse voltage can control the formation of droplets. The pulse voltage waveform is Standardwave, and the parameters are referred to in the following table and finely adjusted according to the environment (the control interface is Figure 13 ), where the absolute value of the voltage range is 20 - 30V.

[0061]

[0062]

[0063] Table 1 Basic parameters of the pulse voltage

[0064] Set the substrate positioning and patterning program of S032, edit the dot matrix or pattern to be printed, fix the cleaned glass substrate in the inkjet printing area, and set the initial printing position at the same time.

[0065] In the embodiment of the present invention, the coordinates of the initial printing position are: X0: - 135.0mm, Y0: - 65 to - 75mm, and the step size of each printing step is set to 0.5 - 1mm (corresponding adjustment according to the pattern), and then print the dot matrix or pattern according to the need.

[0066] The above - disclosed is only a preferred embodiment of a patterning method for blue nickel - doped indium phosphide quantum dots of the present invention. Of course, the scope of the rights of the present invention cannot be limited thereby. Those of ordinary skill in the art can understand all or part of the processes of implementing the above - mentioned embodiments, and the equivalent changes made according to the claims of the present invention still fall within the scope covered by the invention.

Claims

1. A method for patterning blue nickel-doped indium phosphide quantum dots, characterized in that: The following steps are involved: preparing a shell zinc precursor solution and a sulfur-trioctylphosphine solution; Synthesis of InP / InNiP quantum dots; An inkjet printing ink is prepared, and inkjet printing is performed based on the inkjet printing.

2. The patterning method of blue nickel-doped indium phosphide quantum dots according to claim 1, characterized in that: The specific method of preparing the shell zinc precursor solution is: 1.5 g of zinc stearate was weighed and placed in a 20 ml glass bottle, 6 ml of 1-octadecene was added, and the solution was placed in a magnetic stirring and heating device and stirred continuously at a constant temperature of 170° C. until the solution was completely clear, thereby obtaining a shell zinc precursor solution.

3. The patterning method of blue nickel-doped indium phosphide quantum dots according to claim 1, characterized in that: The specific method for preparing the sulfur-trioctylphosphine solution is: Weigh 3.3 mmol of sulfur powder and transfer it to a 10 ml pressure-resistant glass bottle. Then add 1.5 ml of trioctylphosphine and place it in a magnetic stirring and heating device. Stir continuously at a constant temperature of 120° C. until the solution becomes completely clear, thereby obtaining a sulfur-trioctylphosphine solution.

4. The method for patterning blue nickel-doped indium phosphide quantum dots according to claim 1, characterized in that: The specific method of preparing the inkjet printing ink is: n-Octane and 1-octadecene are mixed in a ratio of 1:1 to obtain a mixed solvent, the pre-prepared blue light quantum dots are slowly added to the mixed solvent, and the mixture is placed in a magnetic stirrer for continuous stirring and dispersion until the solution is uniform in all parts and has no large pieces of solid quantum dots, thereby obtaining an inkjet printing ink.

5. The patterning method of blue nickel-doped indium phosphide quantum dots according to claim 1, It is characterized by: The specific method of performing inkjet printing based on the inkjet printing is: Turn on the air circuit, software and horizontal camera of the inkjet printing device, adjust the air pressure to negative pressure to prevent the ink from flowing out, filter the quantum dot ink with a 0.45μm filter head, then inject it into the ink cartridge, install the ink cartridge and fix the nozzle, connect the signal line, and adjust the camera position so that the nozzle appears in the observation window; Slowly increase the air pressure to fill the nozzle with the solution until it sprays out, then reduce the air pressure to negative pressure, and then fine-tune the air pressure valve until stable and tiny droplets are debugged. Analyze the droplet's falling speed, diameter, and volume through the printing program; Set up the substrate positioning and patterning program, edit the dot matrix or pattern to be printed, fix the cleaned glass substrate in the inkjet printing area, and set the initial printing position.

Images