An ultrahigh-temperature near-infrared luminescent material with zero loss and quantum yield close to 100%, and a preparation method and application thereof

Abstract

The application provides a near-infrared luminescent material with ultrahigh temperature, zero loss and quantum yield close to 100%, and a preparation method and application thereof, and belongs to the technical field of luminescence, lighting and analysis and detection. The application takes a compound with a garnet structure as a substrate of the near-infrared luminescent material, the substrate compound has the advantages of a wide band gap, high structural rigidity and adjustable composition, and is easy to induce Cr 3+ to generate high-efficiency near-infrared emission; by introducing Si or Ge, the near-infrared luminescent material with high structural rigidity and high Debye temperature can be obtained, so that the luminescence thermal stability is improved. The results of the examples show that the near-infrared luminescent materials obtained by doping different proportions of Cr 3+ have anti-thermal quenching (about 187% at 150 DEG C) and high quantum yield (about 99%); and the output power of a near-infrared pc-LED light source prepared by using the near-infrared luminescent material and a blue light LED chip is up to 250 mW under a driving current of 100 mA.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of light-emitting, lighting and analytical detection technology, and particularly relates to a near-infrared luminescent material with zero loss and quantum yield close to 100% under ultrahigh temperature and a preparation method and application thereof. BACKGROUND

[0002] The near-infrared light source has been widely used in food quality detection, night vision lighting, medical imaging and plant growth due to its strong anti-visual interference and penetration ability. Compared with traditional near-infrared light sources such as halogen lamps, tungsten lamps and near-infrared LED arrays, the near-infrared phosphor converted light-emitting diode (pc-LED) has the advantages of small size, high efficiency, energy saving and environmental protection, and spectrum adjustable. In the near-infrared pc-LED light source, the luminescent performance of the near-infrared phosphor can completely determine the performance of the near-infrared pc-LED light source. Therefore, developing a high-performance near-infrared phosphor is of great significance for obtaining a near-infrared pc-LED light source that can be practically applied in the future. It is well known that the working temperature of a low-power LED device is 100-150℃, and the working temperature of a high-power LED device can be as high as 200-300℃. In the higher temperature range (100-150℃), the non-radiative relaxation of the excited state electrons of the luminescent ions in most phosphors increases, resulting in a decrease in the luminescent intensity of the phosphor with increasing temperature, which leads to a decrease in the performance of the device. For example, at ultrahigh temperature (more than 200℃), the luminescent intensity of most phosphors will be significantly reduced or even completely quenched, which greatly limits the application of the phosphor at high temperature. A large number of research reports have proved that Cr 3+ The Cr

[0003] Therefore, it is urgent to develop a near-infrared luminescent material with excellent thermal stability and high quantum yield, which is a key problem in the field. SUMMARY

[0004] The present application aims to provide a near-infrared luminescent material with zero loss and quantum yield close to 100% under ultrahigh temperature and a preparation method and application thereof. The near-infrared luminescent material provided by the present application has the characteristics of anti-thermal quenching (-187% @ 150℃) and high quantum yield (-99%).

[0005] In order to achieve the above-mentioned application purposes, the present application provides the following technical solutions:

[0006] The present application provides a near-infrared luminescent material with zero loss and quantum yield close to 100% under ultrahigh temperature, and its chemical structural formula is Y2BaGa 4-xMO 12 xCr 3+ M is Si or Ge, and x is 0.01 to 1.

[0007] Preferably, the near-infrared luminescent material has a garnet structure.

[0008] Preferably, x is 0.01 to 0.1.

[0009] Preferably, the particle size of the near-infrared luminescent material is 1–5 μm.

[0010] The present invention provides a method for preparing the near-infrared luminescent material described in the above technical solution, comprising: mixing a yttrium source, a barium source, a gallium source, a silicon / germanium source and a chromium source and then sintering the mixture to obtain a near-infrared luminescent material with zero loss of light emission at ultra-high temperature and a quantum yield of nearly 100%.

[0011] Preferably, the yttrium source, barium source, gallium source, silicon / germanium source, and chromium source include elemental substances, oxides, carbonates, or nitrates.

[0012] Preferably, the mixing time is 15 to 30 minutes.

[0013] Preferably, the sintering temperature is 1000–1400℃ and the sintering time is 2–4 hours.

[0014] The present invention also provides the application of the near-infrared luminescent material with zero light emission and nearly 100% quantum yield at ultra-high temperature as described in the above technical solution, or the near-infrared luminescent material with zero light emission and nearly 100% quantum yield at ultra-high temperature prepared by the preparation method described in the above technical solution, in near-infrared PC-LED light sources.

[0015] Preferably, the method of application includes: encapsulating a blue LED chip and a near-infrared luminescent material to obtain a near-infrared pc-LED light source.

[0016] This invention provides a near-infrared luminescent material with zero luminescence loss at ultra-high temperatures and a quantum yield of nearly 100%, whose chemical structural formula is: Y₂BaGa 4-x MO 12 xCr 3+ M is Si or Ge, and x is 0.01 to 1. This invention uses a garnet structure as the matrix structure for the near-infrared luminescent material, which allows the near-infrared luminescent material to possess advantages such as a wide bandgap, high structural rigidity, and tunable composition, thereby inducing Cr... 3+ Highly efficient near-infrared emission; by introducing Si or Ge into the garnet-structured matrix material, high structural rigidity and high Debye temperature (BaY2Ga4SiO) were achieved. 12 Θ D= 1230 K, BaY2Ga4GeO 12 of Θ D = 987 K) to improve the thermal stability of the near-infrared luminescent material. The results of the examples show that the present application doped with different proportions of Cr 3+ The near-infrared luminescent material obtained after the heat treatment has anti-thermal quenching (~ 187% @ 150°C) and high quantum yield (~ 99%); the output power of the near-infrared pc-LED light source prepared by using the near-infrared luminescent material and a blue light LED chip is as high as 250 mW at a driving current of 100 mA. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 XRD spectrum of the near-infrared luminescent material provided for Example 1 and Y3Ga5O 12 standard PDF card (23852-ICSD);

[0018] Figure 2 Photoluminescence spectrum of the near-infrared luminescent material provided for Example 1 under blue light (λ = 445 nm) excitation;

[0019] Figure 3 Excitation spectrum corresponding to the emission peak (λ = 710 nm) of the near-infrared luminescent material provided for Example 1;

[0020] Figure 4 Curve of the spectral intensity of the near-infrared luminescent material provided for Example 1 versus temperature in the range of 25-300°C;

[0021] Figure 5 Quantum yield diagram of the near-infrared luminescent material provided for Example 1;

[0022] Figure 6 XRD spectrum of the near-infrared luminescent material provided for Example 2 and Y3Ga5O 12 standard PDF card (23852-ICSD);

[0023] Figure 7 Photoluminescence spectrum of the near-infrared luminescent material provided for Example 2 under blue light (λ = 460 nm) excitation;

[0024] Figure 8 Excitation spectrum corresponding to the emission peak (λ = 711 nm) of the near-infrared luminescent material provided for Example 2;

[0025] Figure 9 Curve of the spectral intensity of the near-infrared luminescent material provided for Example 2 versus temperature in the range of 25-300°C;

[0026] Figure 10The luminescence spectrum of the near-infrared pc-LED driven by the application example 1 under different currents;

[0027] Figure 11 The output power graph of the near-infrared pc-LED driven by the application example 1 under different currents. DETAILED DESCRIPTION

[0028] The application provides a near-infrared luminescent material with super-high temperature luminescence zero loss and quantum yield close to 100%, and the chemical structural formula is Y2BaGa 4-x MO 12 xCr 3+ , wherein M is Si or Ge, and x is 0.01-1.

[0029] In the application, the structure of the near-infrared luminescent material is preferably garnet structure.

[0030] As an embodiment of the application, x can be 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, 0.1, 0.2, 0.3, 0.5, 0.8 or 1.

[0031] In the application, the particle size of the near-infrared luminescent material is preferably 1-5 microns. By controlling the particle size of the near-infrared luminescent material, the color uniformity of the near-infrared luminescent material can be improved.

[0032] The application adopts garnet structure as the matrix structure of the near-infrared luminescent material, so that the near-infrared luminescent material has the advantages of wide band gap, high structural rigidity and adjustable composition, thereby inducing high-efficiency near-infrared emission of Cr 3+ ; by introducing Si or Ge into the garnet structure matrix, a near-infrared luminescent material with high structural rigidity and high Debye temperature can be obtained, thereby improving the thermal stability of the near-infrared luminescent material.

[0033] The application further provides a preparation method of the near-infrared luminescent material with super-high temperature luminescence zero loss and quantum yield close to 100% according to the technical scheme, and the preparation method comprises the following steps: mixing a yttrium source, a barium source, a gallium source, a silicon source / ge source and a chromium source, and then sintering to obtain the near-infrared luminescent material with super-high temperature luminescence zero loss and quantum yield close to 100%.

[0034] In the present application, the yttrium source, barium source, gallium source, silicon / germanium source and chromium source preferably include simple substance, oxide, carbonate or nitrate, more preferably oxide, further preferably Y2O3, BaCO3, Ga2O3, SiO2 / GeO2 and Cr2O3. In the present application, the molar ratio of Ba, Y, Ga, Si / Ge, Cr in the yttrium source, barium source, gallium source, silicon / germanium source and chromium source is preferably 1:2:4-x:1:x. In the present application, x is preferably 0.01-1, more preferably 0.01-0.1. The present application does not have special limitation on the specific source of the raw materials, and commercially available products known to those skilled in the art can be used. By using the above raw materials, the present application can reduce the introduction of impurities, control the molar ratio of each element in the raw materials, and ensure that the chemical structural formula of the near-infrared luminescent material meets the requirements.

[0035] The present application does not have special requirements for the particle size of the yttrium source, barium source, gallium source, silicon / germanium source and chromium source, and powder raw materials can be used.

[0036] In the present application, the mixing time is preferably 15-30 min. The present application does not have special limitation on the mixing method, and the raw materials can be mixed uniformly. As an embodiment of the present application, the mixing time can be 20-25 min; the mixing method can be grinding or ball milling.

[0037] In the present application, the sintering temperature is preferably 1000-1400℃; the sintering time is preferably 2-4 h. As an embodiment of the present application, the sintering temperature can be 1000℃, 1050℃, 1100℃, 1150℃, 1200℃, 1250℃, 1300℃, 1350℃ or 1400℃; the sintering time can be 2 h, 2.5 h, 3 h, 3.5 h or 4 h. By sintering, the present application can make the raw materials form a dense oxide composite material; by controlling the sintering temperature and time, the density of the fluorescent powder can be further improved, thereby improving its thermal stability and quantum yield.

[0038] The present application preferably cools and grinds the product after sintering to obtain a near-infrared luminescent material with super-high temperature luminescence zero loss and quantum yield close to 100%. The present application does not have special limitation on the cooling method and cooling rate, and natural cooling or furnace cooling can be used. The present application does not have special limitation on the grinding method and time, and the particle size of the near-infrared luminescent material can meet the requirements.

[0039] The preparation method provided by the present application is simple, only needs to mix the raw materials uniformly and then sinter to obtain the required near-infrared luminescent material, without introducing new equipment, reducing the production cost of enterprises, and being conducive to large-scale industrial promotion.

[0040] The application further provides application of the near-infrared light-emitting material with zero loss and a quantum yield close to 100% at ultrahigh temperature in a near-infrared pc-LED light source.

[0041] In the application, the method for the application preferably comprises: packaging a blue light LED chip and the near-infrared light-emitting material to obtain the near-infrared pc-LED light source.

[0042] The application does not have a special limitation on the amount of the near-infrared light-emitting material, which can be determined according to the technical common sense of those skilled in the art and actual needs. As an embodiment of the application, the packaging thickness of the near-infrared light-emitting material can be 0.1-100 μm.

[0043] The application does not have a special limitation on the specific operation of packaging the blue light LED chip and the near-infrared light-emitting material, which can be packaged by using a packaging method well known to those skilled in the art.

[0044] The technical solutions in the application will be described clearly and completely below by combining with the embodiments in the application. Obviously, the described embodiments are only some of the embodiments of the application, rather than all the embodiments. Based on the embodiments in the application, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the application.

[0045] Embodiment 1

[0046] A near-infrared light-emitting material with zero loss and a quantum yield close to 100% at ultrahigh temperature has a chemical structural formula of Y2BaGa 3.92 SiO 12 :0.08Cr 3+ The near-infrared light-emitting material has a garnet structure, and the particle size of the near-infrared light-emitting material is 1-5 μm.

[0047] The preparation method of the near-infrared light-emitting material with zero loss and a quantum yield close to 100% at ultrahigh temperature comprises the following steps: 0.923 g of Y2O3, 0.806 g of BaCO3, 1.501 g of Ga2O3, 0.245 g of SiO2 and 0.025 g of Cr2O3 are mixed and ground for 20 min, then are put into a high-temperature furnace and sintered at 1400 ℃ for 4 h, and after the furnace is cooled to room temperature, the near-infrared light-emitting material with zero loss and a quantum yield close to 100% at ultrahigh temperature is obtained by grinding.

[0048] Figure 1 The XRD spectrum and Y3Ga5O12 Comparison chart of standard PDF card (23852-ICSD). From Figure 1 It can be seen that the near-infrared luminescent material provided by the present application has Y3Ga5O 12 crystal structure.

[0049] Figure 2 Photoluminescence spectrum of the near-infrared luminescent material provided for Example 1 under blue light (λ = 445 nm) excitation. From Figure 2 It can be seen that the emission wavelength of the near-infrared luminescent material provided by the present application is in the range of 650-850 nm.

[0050] Figure 3 Excitation spectrum corresponding to the emission peak (λ = 710 nm) of the near-infrared luminescent material provided for Example 1. From Figure 3 It can be seen that the excitation wavelength of the near-infrared luminescent material provided by the present application is in the range of 400-500 nm, which can be effectively excited by blue light.

[0051] Figure 4 Temperature dependence of spectral intensity of the near-infrared luminescent material provided for Example 1 in the range of 25-300℃. From Figure 4 It can be seen that as the temperature increases, the near-infrared luminescent material always maintains the anti-thermal quenching behavior, when the temperature reaches 150℃, the spectral intensity reaches 187% of that at room temperature, when the temperature reaches 200℃, the spectral intensity reaches 230% of that at room temperature, indicating that the near-infrared luminescent material provided by the present application has excellent thermal stability, and the luminescence intensity has zero loss under high temperature environment.

[0052] Figure 5 Quantum yield diagram of the near-infrared luminescent material provided for Example 1. From Figure 5 It can be seen that with BaSO4 as the reference sample, the quantum yield of the near-infrared luminescent material provided by the present application is as high as 99%.

[0053] Example 2

[0054] A near-infrared luminescent material with ultra-high temperature luminescence zero loss and quantum yield close to 100%, which has a chemical structural formula of Y2BaGa 3.94 GeO 12 : 0.06Cr 3+ , the near-infrared luminescent material has a garnet structure; the particle size of the near-infrared luminescent material is 1-5 μm;

[0055] The preparation method of the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100% is as follows: 0.876 g of Y2O3, 0.766 g of BaCO3, 1.434 g of Ga2O3, 0.406 g of GeO2 and 0.018 g of Cr2O3 are mixed and ground for 30 min, then put into a high-temperature furnace and sintered at 1200 ℃ for 4 h, and then ground after cooling to room temperature in the furnace, to obtain the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100%.

[0056] Figure 6 The XRD spectrum of the near-infrared luminescent material provided for Example 2 and the Y3Ga5O12 standard PDF card (23852-ICSD) are compared. 12 Figure 6 It can be seen that the near-infrared luminescent material provided by the present application has Y3Ga5O12 12 type crystal structure.

[0057] Figure 7 The photoluminescence spectrum of the near-infrared luminescent material provided for Example 2 under blue light (λ = 460 nm) excitation. From Figure 7 It can be seen that the emission wavelength of the near-infrared luminescent material provided by the present application is in the range of 650-850 nm.

[0058] Figure 8 The excitation spectrum corresponding to the emission peak (λ = 711 nm) of the near-infrared luminescent material provided for Example 2. From Figure 8 It can be seen that the excitation wavelength of the near-infrared luminescent material provided by the present application is in the range of 400-500 nm, which can be effectively excited by blue light.

[0059] Figure 9 The curve of the spectral intensity of the near-infrared luminescent material provided for Example 2 changing with temperature in the range of 25-300 ℃. From Figure 9 It can be seen that with the increase of temperature, the spectral intensity of the near-infrared luminescent material shows a trend of first increasing and then decreasing, when the temperature reaches 150 ℃ or above, the spectral intensity reaches 151% of that at room temperature, when the temperature reaches about 200 ℃, the spectral intensity reaches 160% of that at room temperature, indicating that the near-infrared luminescent material provided by the present application has excellent thermal stability and zero loss of luminescence intensity in high-temperature environment.

[0060] Example 3

[0061] A near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100%, whose chemical structural formula is: Y2BaGa 3.98 SiO 12 : 0.02 Cr 3+ ​, the structure of the near-infrared luminescent material is garnet structure; the particle size of the near-infrared luminescent material is 1-5 μm;

[0062] The preparation method of the near-infrared luminescent material with ultra-high temperature luminescence zero loss and quantum yield close to 100% is as follows: 0.921 g of Y2O3, 0.805 g of BaCO3, 1.522 g of Ga2O3, 0.245 g of SiO2 and 0.006 g of Cr2O3 are mixed and ground for 25 min, then put into a high-temperature furnace and sintered at 1350 DEG C for 3.5 h, cooled to room temperature in the furnace, and then ground to obtain the near-infrared luminescent material with ultra-high temperature luminescence zero loss and quantum yield close to 100%.

[0063] Example 4

[0064] A near-infrared luminescent material with ultra-high temperature luminescence zero loss and quantum yield close to 100%, the chemical structural formula of which is Y2BaGa 3.96 SiO 12 : 0.04 Cr 3+ , the structure of the near-infrared luminescent material is garnet structure; the particle size of the near-infrared luminescent material is 1-5 μm;

[0065] The preparation method of the near-infrared luminescent material with ultra-high temperature luminescence zero loss and quantum yield close to 100% is as follows: 0.922 g of Y2O3, 0.806 g of BaCO3, 1.515 g of Ga2O3, 0.245 g of SiO2 and 0.012 g of Cr2O3 are mixed and ground for 25 min, then put into a high-temperature furnace and sintered at 1200 DEG C for 2.5 h, cooled to room temperature in the furnace, and then ground to obtain the near-infrared luminescent material with ultra-high temperature luminescence zero loss and quantum yield close to 100%.

[0066] Example 5

[0067] A near-infrared luminescent material with ultra-high temperature luminescence zero loss and quantum yield close to 100%, the chemical structural formula of which is Y2BaGa 3.94 SiO 12 : 0.06 Cr 3+ , the structure of the near-infrared luminescent material is garnet structure; the particle size of the near-infrared luminescent material is 1-5 μm;

[0068] The preparation method of the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100% is as follows: 0.922g of Y2O3, 0.806g of BaCO3, 1.508g of Ga2O3, 0.245g of SiO2 and 0.019g of Cr2O3 are mixed and ground for 15min, and then put into a high-temperature furnace and sintered at 1150℃ for 4h, and then ground after cooling to room temperature in the furnace, to obtain the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100%.

[0069] Example 6

[0070] A near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100%, whose chemical structural formula is Y2BaGa 3.9 SiO 12 : 0.1Cr 3+ , the structure of the near-infrared luminescent material is garnet structure; the particle size of the near-infrared luminescent material is 1-5μm;

[0071] The preparation method of the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100% is as follows: 0.923g of Y2O3, 0.807g of BaCO3, 1.494g of Ga2O3, 0.246g of SiO2 and 0.031g of Cr2O3 are mixed and ground for 20min, and then put into a high-temperature furnace and sintered at 1000℃ for 4h, and then ground after cooling to room temperature in the furnace, to obtain the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100%.

[0072] Example 7

[0073] A near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100%, whose chemical structural formula is Y2BaGa 3.98 GeO 12 : 0.02Cr 3+ , the structure of the near-infrared luminescent material is garnet structure; the particle size of the near-infrared luminescent material is 1-5μm;

[0074] The preparation method of the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100% is as follows: 0.876g of Y2O3, 0.766g of BaCO3, 1.447g of Ga2O3, 0.406g of GeO2 and 0.006g of Cr2O3 are mixed and ground for 20min, and then put into a high-temperature furnace and sintered at 1350℃ for 3h, and then ground after cooling to room temperature in the furnace, to obtain the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100%.

[0075] Example 8

[0076] A near-infrared luminescent material with super-high-temperature luminescence zero loss and quantum yield close to 100%, a chemical structural formula of which is Y2BaGa 3.96 GeO 12 : 0.04Cr 3+ , the structure of the near-infrared luminescent material is a garnet structure; the particle size of the near-infrared luminescent material is 1-5 μm;

[0077] The preparation method of the near-infrared luminescent material with super-high-temperature luminescence zero loss and quantum yield close to 100% is: 0.876g of Y2O3, 0.766g of BaCO3, 1.44g of Ga2O3, 0.406g of GeO2 and 0.012g of Cr2O3 are mixed and ground for 15min, then put into a high-temperature furnace and sintered at 1300℃ for 3h, cooled to room temperature with the furnace, and then ground to obtain the near-infrared luminescent material with super-high-temperature luminescence zero loss and quantum yield close to 100%.

[0078] Example 9

[0079] A near-infrared luminescent material with super-high-temperature luminescence zero loss and quantum yield close to 100%, a chemical structural formula of which is Y2BaGa 3.92 GeO 12 : 0.08Cr 3+ , the structure of the near-infrared luminescent material is a garnet structure; the particle size of the near-infrared luminescent material is 1-5 μm;

[0080] The preparation method of the near-infrared luminescent material with super-high-temperature luminescence zero loss and quantum yield close to 100% is: 0.876g of Y2O3, 0.766g of BaCO3, 1.427g of Ga2O3, 0.406g of GeO2 and 0.024g of Cr2O3 are mixed and ground for 20min, then put into a high-temperature furnace and sintered at 1150℃ for 2.5h, cooled to room temperature with the furnace, and then ground to obtain the near-infrared luminescent material with super-high-temperature luminescence zero loss and quantum yield close to 100%.

[0081] Example 10

[0082] A near-infrared luminescent material with super-high-temperature luminescence zero loss and quantum yield close to 100%, a chemical structural formula of which is Y2BaGa 3.9 GeO 12 : 0.1Cr 3+ , the structure of the near-infrared luminescent material is a garnet structure; the particle size of the near-infrared luminescent material is 1-5 μm;

[0083] The preparation method of the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100% is as follows: 0.876g of Y2O3, 0.766g of BaCO3, 1.42g of Ga2O3, 0.406g of GeO2 and 0.03g of Cr2O3 are mixed and ground for 30min, then put into a high-temperature furnace and sintered at 1300℃ for 4h, then cooled to room temperature in the furnace and ground, to obtain the near-infrared luminescent material with ultrahigh-temperature luminescence zero loss and quantum yield close to 100%.

[0084] The quantum yield and thermal stability of the near-infrared luminescent material provided in Examples 1-10 are tested, and the results are shown in Table 1:

[0085] Table 1 Performance of the near-infrared luminescent material provided in Examples 1-10

[0086] Ratio of amounts of substances (2:1 :m:1 :n) Quantum yield / % Thermal stability / % @ 150 °C Example 1 2：1：3.92：1：0.08 99 187 Example 2 2：1：3.94：1：0.06 93 151 Example 3 2：1：3.98：1：0.02 95 110 Example 4 2：1：3.96：1：0.04 97 115 Example 5 2：1：3.94：1：0.06 96.3 117 Example 6 2：1：3.90：1：0.10 95.6 119 Example 7 2：1：3.98：1：0.02 96.7 118 Example 8 2：1：3.96：1：0.04 98.4 118 Example 9 2：1：3.92：1：0.08 99 120 Example 10 2：1：3.90：1：0.10 95.5 117

[0087] As can be seen from Table 1, the near-infrared luminescent material doped with different proportions of Cr 3+ ions provided by the present application all have high thermal stability (~187% @ 150℃) and high quantum yield (~99%).

[0088] Comparative Example 1

[0089] A near-infrared luminescent material excited by blue light, which is chemically characterized as: Sr3AlO4F:Ce 3+ (F = Si, N), from Laser & Photonics Reviews, 2024, Vol. 18, No. 3.

[0090] The thermal stability of the near-infrared luminescent material is 98% @ 150℃.

[0091] Comparative Example 2

[0092] A near-infrared fluorescent powder, which is chemically characterized as: CaLu2Al4SiO 12 :Cr 3+ , from Advanced Optical Materials, 2021, Vol. 9, No. 16.

[0093] The quantum yield of the near-infrared fluorescent powder is 20.7%.

[0094] Comparative Example 3

[0095] A near-infrared fluorescent powder, which is chemically characterized as: Gd 2.4 Lu 0.6 Ga4AlO 12 :Cr 3+from Chemical Engineering Journal, 2021, vol. 428.

[0096] The quantum yield of the near-infrared fluorescent powder is 90.3%.

[0097] Comparative Example 4

[0098] A near-infrared fluorescent powder, the chemical characterization of which is: CaAl2Ga3O 12 : Cr 3+ from Advanced Optical Materials, 2022, vol. 10, no. 11.

[0099] The thermal stability of the near-infrared fluorescent powder is 96.8% @ 150℃, and the quantum yield is 97.3%.

[0100] Comparative Example 5

[0101] A near-infrared fluorescent powder, the chemical characterization of which is: Ca3Sc2Si3O 12 : Cr 3+ from Light: Science & Applications, 2020, vol. 9, no. 1.

[0102] The thermal stability of the near-infrared fluorescent powder is 97.4% @ 150℃, and the quantum yield is 92.3%.

[0103] Comparative Example 6

[0104] A near-infrared fluorescent powder, the chemical characterization of which is: Gd3Sc 1.5 Al 0.5 Ga3O 12 : Cr 3+ from Advanced Optical Materials, 2020, vol. 9, no. 7.

[0105] The thermal stability of the near-infrared fluorescent powder is 86% @ 150℃, and the quantum yield is 91%.

[0106] From the comparison of Examples 1-10 and Comparative Examples 1-6, it can be seen that compared with the reported near-infrared fluorescent powder, the thermal stability and quantum yield of the near-infrared luminescent material provided by the present application are greatly improved.

[0107] Application Example 1

[0108] A near-infrared pc-LED light source is obtained by packaging a blue LED chip and the near-infrared luminescent material prepared in Example 1.

[0109] Figure 10The luminescence spectrum of the near-infrared pc-LED under different current driving in application example 1. Figure 11 The output power graph of the near-infrared pc-LED under different current driving in application example 1. Figure 10 and Figure 11 It can be seen that the near-infrared luminescent material provided by the present application realizes the preparation of a near-infrared pc-LED light source with an output power of 250 mW under a current of 100 mA.

[0110] The above only describes the preferred embodiments of the present application, and it should be noted that, for those skilled in the art, without departing from the principles of the present application, several improvements and refinements can be made, and these improvements and refinements should also be considered as the protection scope of the present application.

Claims

1. A near-infrared luminescent material, with the chemical structural formula: Y₂BaGa 4-x MO 12 xCr 3+ M is Si or Ge, and x is 0.01 to 0.

1.

2. The near-infrared luminescent material according to claim 1, characterized in that, The near-infrared luminescent material has a garnet structure.

3. The near-infrared luminescent material according to claim 1, characterized in that, The particle size of the near-infrared luminescent material is 1~5μm.

4. A method for preparing the near-infrared luminescent material according to any one of claims 1 to 3, comprising: Near-infrared luminescent materials are obtained by sintering a mixture of yttrium, barium, gallium, silicon / germanium, and chromium sources.

5. The preparation method according to claim 4, characterized in that, The yttrium source, barium source, gallium source, silicon / germanium source, and chromium source include elements, oxides, carbonates, or nitrates.

6. The preparation method according to claim 4, characterized in that, The mixing time is 15-30 minutes.

7. The preparation method according to claim 4, characterized in that, The sintering temperature is 1000~1400℃, and the sintering time is 2~4h.

8. The application of the near-infrared luminescent material according to any one of claims 1 to 3 or the near-infrared luminescent material prepared by the preparation method according to any one of claims 4 to 7 in a near-infrared PC-LED light source.

9. The application according to claim 8, characterized in that, The method of the application includes: encapsulating a blue LED chip and a near-infrared luminescent material to obtain a near-infrared pc-LED light source.

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