Method for processing semiconductor substrate

Abstract

The processing method of the semiconductor substrate comprises the following steps: cleaning and drying the semiconductor substrate; in a vacuum chamber, performing ion sputter coating treatment on the semiconductor substrate to form a molybdenum thin film layer on the semiconductor substrate; wherein the ion sputter coating treatment comprises the steps that the semiconductor substrate is supported by a rotatable objective table, a preset distance is formed between a molybdenum target and the semiconductor substrate, and the objective table keeps rotating during coating. The thin film layer is formed on the semiconductor substrate and has good oxidation resistance and wear resistance, so that the surface of the semiconductor substrate is prevented from being oxidized or abraded, and subsequent processing procedures such as laser marking and semiconductor element protection are facilitated.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and particularly to a method for treating a semiconductor substrate. Background Art

[0002] In recent years, laser cutting technology has been commonly used for processing the surface of semiconductors. Usually, a laser mark is made on the side of the semiconductor to facilitate classification and search during processing. However, the laser focuses on the semiconductor surface to cause local thermal melting damage, thereby generating continuous damage scratches. Due to the excessive concentration of energy, the laser generates a considerable temperature difference between the material at the focal point and its surrounding materials. The resulting thermal stress will cause the semiconductor substrate to have a chipping phenomenon, thus affecting the performance of semiconductor components.

[0003] Therefore, it is necessary to provide an improved method for treating a semiconductor substrate to form a protective film on the substrate surface to solve the above problems. Summary of the Invention

[0004] The purpose of the present invention is to provide a method for treating a semiconductor substrate to form a thin film layer on the semiconductor substrate, which has good oxidation resistance and wear resistance, so as to prevent the surface of the semiconductor substrate from being oxidized or worn, thereby facilitating subsequent processing steps, such as making a laser mark and protecting semiconductor components.

[0005] To achieve the above purpose, the present invention provides a method for treating a semiconductor substrate, including the following steps:

[0006] Clean and dry the semiconductor substrate;

[0007] In a vacuum chamber, perform ion sputtering coating treatment on the semiconductor substrate to form a molybdenum thin film layer on the semiconductor substrate;

[0008] Wherein, the ion sputtering coating treatment includes: the semiconductor substrate is supported by a rotatable carrier table, the molybdenum target and the semiconductor substrate have a predetermined distance, and during coating, the carrier table keeps rotating.

[0009] Compared with the prior art, the present invention first cleans and dries the semiconductor substrate, and then performs ion sputtering coating treatment in a vacuum chamber. Specifically, the semiconductor substrate is supported by a rotatable stage, and the molybdenum target is at a predetermined distance from the semiconductor substrate. When coating, the stage keeps rotating. Thus, the semiconductor substrate is coated while rotating, and the deposited molybdenum thin film layer has good uniformity. Moreover, the molybdenum thin film layer has good oxidation resistance and strong light transmittance, can keep the original color and gloss of the substrate for a long time, and at the same time, has more reliable wear resistance, and can prevent the appearance color of the substrate surface from being worn and changed due to accidental friction. The processed semiconductor substrate is beneficial to subsequent processing procedures, such as laser marking on the side of the semiconductor substrate, and it is not easy to damage the internal components of the semiconductor.

[0010] As an embodiment, the ion sputtering coating treatment further includes: controlling the air pressure in the vacuum chamber to be 2×10 -3 -2.5×10 -3 Pa.

[0011] As an embodiment, the ion sputtering coating treatment further includes: introducing argon gas into the vacuum chamber, and the flow rate of the argon gas is 300 - 350 sccm.

[0012] As an embodiment, the ion sputtering coating treatment further includes: controlling the ion source current to be 85 - 100 A, and controlling the power of the molybdenum target to be 45 - 65 KW. Preferably, the ion source current is 90 A and the power of the molybdenum target is 55 KW.

[0013] As an embodiment, the ion sputtering coating treatment further includes: controlling the electrical bias voltage to be 120 - 180 V.

[0014] As an embodiment, the distance between the molybdenum target and the semiconductor substrate is 200 - 300 mm.

[0015] As an embodiment, the time of the ion sputtering coating treatment is 20 - 25 minutes.

[0016] As an embodiment, the thickness of the molybdenum thin film layer is 5 - 6 nm.

[0017] As an embodiment, the stage rotates at a speed of 180 - 200 mm / s. Detailed implementation manners

[0018] To make the above objects, features, and advantages of the present application more obvious and understandable, the following describes the specific implementation manners of the present application in detail with reference to some embodiments. Many specific details are set forth in the following description to facilitate a thorough understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0019] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship for the purpose of facilitating the description of the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present application.

[0020] In addition, the terms "first" and "second" are used only for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0021] In the present application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "under" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0022] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected" to another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only implementation manner.

[0023] The following further describes the method for processing a semiconductor substrate according to the present invention in conjunction with embodiments, but does not limit the present invention thereby. The method of the present invention aims to provide a method for processing a semiconductor substrate to form a thin film layer on the semiconductor substrate, which has good oxidation resistance and wear resistance, so as to prevent the surface of the semiconductor substrate from being oxidized or worn, thereby facilitating subsequent processing steps, such as laser marking, to protect semiconductor components.

[0024] An embodiment of the method for processing a semiconductor substrate according to the present invention includes the following steps:

[0025] Clean and dry the semiconductor substrate;

[0026] In a vacuum chamber, perform ion sputtering coating on the semiconductor substrate to form a molybdenum thin film layer on the semiconductor substrate;

[0027] Wherein, the ion sputtering coating process includes: the semiconductor substrate is supported by a rotatable stage, the molybdenum target has a predetermined distance from the semiconductor substrate, and the stage keeps rotating during coating.

[0028] The present invention first cleans and dries the semiconductor substrate, and then performs ion sputtering coating in a vacuum chamber. Specifically, the semiconductor substrate is supported by a rotatable stage, the molybdenum target has a predetermined distance from the semiconductor substrate, and the stage keeps rotating during coating. Thus, the semiconductor substrate is coated while rotating, and the deposited molybdenum thin film layer has good uniformity. Moreover, the molybdenum thin film layer has good oxidation resistance and strong light transmittance, which can keep the original color and gloss of the substrate for a long time. At the same time, it has more reliable wear resistance and can prevent the appearance color of the substrate surface from being worn and changed due to accidental friction. The processed semiconductor substrate is beneficial to subsequent processing steps, such as laser marking on the side of the semiconductor substrate, and is not easy to damage the internal components of the semiconductor.

[0029] Specifically, in one embodiment, first perform surface cleaning on the semiconductor substrate, for example, clean it with deionized water for 20 - 30 minutes, and obtain a clean semiconductor substrate after drying.

[0030] The coating process of the present invention is carried out in a vacuum chamber. First, evacuate the chamber to make the vacuum degree reach 2×10 -3 -2.5×10 -3 Pa.

[0031] Specifically, a rare metal material molybdenum is used as the target. The distance between the semiconductor substrate and the target is 200 - 300 mm. Specifically, the semiconductor substrate is supported by a rotatable stage. For example, the stage can rotate along its axis, so that the semiconductor substrate thereon also rotates around its axis and rotates at a predetermined angle as required, such as 360 degrees. Specifically, the stage of the semiconductor rotates self - rotationally at a speed of 180 - 200 mm / s.

[0032] The present invention obtains the target thin film layer by optimizing the process conditions of ion sputtering coating. Among them, argon with a purity of 99.999% is used as the working gas, and the flow rate of argon is 300 - 350 sccm. The ion source current is controlled to be 85 - 100 A, preferably, the ion source current is 90 A. The target power is controlled to be 45 - 65 KW, preferably, the target power is 55 KW. The electrical bias voltage is controlled to be 120 - 180 V, preferably, the electrical bias voltage is 160 V. In addition, during sputtering, the working pressure of the chamber is adjusted to be 0.5 - 0.85 Pa.

[0033] Preferably, the ion sputtering coating treatment time is 20 - 25 minutes to obtain a nano - molybdenum thin film layer with a thickness of 5 - 6 nm.

[0034] The present invention cleans and dries the semiconductor substrate, and then performs ion sputtering coating treatment in a vacuum chamber. Specifically, the semiconductor substrate is supported by a rotatable stage, and there is a predetermined distance between the molybdenum target and the semiconductor substrate. During coating, the stage keeps rotating. Thus, the semiconductor substrate is coated while rotating, and the deposited molybdenum thin film layer has good uniformity. Moreover, the molybdenum thin film layer has good oxidation resistance and strong light transmittance, can keep the original color and gloss of the substrate for a long time, and at the same time, has more reliable wear - resistant performance, which can prevent the appearance color of the substrate surface from being worn and changed due to accidental friction. The processed semiconductor substrate is beneficial to subsequent processing procedures, such as laser marking on the side of the semiconductor substrate, and it is not easy to damage the internal components of the semiconductor.

[0035] The above - disclosed are only the preferred embodiments of the present invention. Of course, the scope of the rights of the present invention cannot be limited thereby. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A method for treating a semiconductor substrate, characterized in that, comprising the following steps: Clean and dry the semiconductor substrate; In a vacuum chamber, perform ion sputtering coating on the semiconductor substrate to form a molybdenum thin film layer on the semiconductor substrate; Wherein, the ion sputtering coating process includes: the semiconductor substrate is supported by a rotatable carrier table, the molybdenum target has a predetermined distance from the semiconductor substrate, and during coating, the carrier table keeps rotating.

2. The method for treating a semiconductor substrate according to claim 1, characterized in that, The ion sputtering coating process further includes: controlling the air pressure in the vacuum chamber to be 2×10 -3 -2.5×10 -3 Pa.

3. The method for treating a semiconductor substrate according to claim 1, characterized in that, The ion sputtering coating process further includes: introducing argon gas into the vacuum chamber, and the flow rate of the argon gas is 300 - 350 sccm.

4. The method for treating a semiconductor substrate according to claim 1, characterized in that, The ion sputtering coating process further includes: controlling the ion source current to be 85 - 100 A, and controlling the power of the molybdenum target to be 45 - 65 KW.

5. The method for treating a semiconductor substrate according to claim 4, characterized in that: The ion source current is 90 A, and the power of the molybdenum target is 55 KW.

6. The method for treating a semiconductor substrate according to claim 1, characterized in that, The ion sputtering coating process further includes: controlling the electrical bias voltage to be 120 - 180 V.

7. The method for treating a semiconductor substrate according to claim 1, characterized in that, The distance between the molybdenum target and the semiconductor substrate is 200 - 300 mm.

8. The method for treating a semiconductor substrate according to claim 1, characterized in that, The time of the ion sputtering coating process is 20 - 25 minutes.

9. The method for treating a semiconductor substrate according to claim 1, characterized in that, The thickness of the molybdenum thin film layer is 5 - 6 nm.

10. The method for treating a semiconductor substrate according to claim 1, characterized in that, The carrier table rotates self - at a speed of 180 - 200 mm / s.