Semiconductor sputtering system

Abstract

The invention provides a semiconductor sputtering method and a semiconductor sputtering system, which are characterized in that a lifting structure (shutter) and another group of sputtering carriers are additionally arranged in the middle of an originally designed loading / unloading platform, so that mutual shuttling of the two groups is realized. The design allows the equipment to carry out feeding, discharging and sputtering operation at the same time. And when the first group of fixed seats perform sputtering coating in the sputtering coating cavity, the second group of fixed seats can complete loading of a new to-be-coated object within the time. Compared with the traditional design of a single fixed seat, the device has the advantages that the materials do not need to be replaced after sputtering is completed, the single production cycle is greatly shortened, the yield in unit time is greatly improved, and the qualitative leap of the production efficiency is realized.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and particularly to a semiconductor sputtering system. Background Art

[0002] In the field of semiconductor manufacturing, semiconductor mask sputtering is a crucial process step, and its process efficiency and quality have a decisive impact on the performance and production benefits of semiconductor products. Currently, the traditional semiconductor mask sputtering speed is mainly reflected in two key aspects: one is the loading and unloading process, and the other is the sputtering process.

[0003] The sputtering process is a process in which the target atoms are sputtered onto the surface of the mask to form a thin film by bombarding the target with high-speed argon ions. The time of this process can be adjusted according to the preset process recipe. By changing the sputtering time and related process parameters, such as the power of the sputtering equipment, the argon gas flow rate, the material and quality of the target, the film layer characteristics and film thickness can be effectively controlled to meet the diverse requirements in semiconductor manufacturing. For example, when manufacturing different types of chips, the requirements for the thickness and characteristics of the thin film on the mask are very different. By flexibly adjusting the sputtering process parameters, products that meet the requirements can be produced.

[0004] However, in actual production, there are serious efficiency bottlenecks in the loading and unloading processes of traditional semiconductor mask sputtering machines. Currently, most traditional devices are only equipped with a set of loading devices, which means that all the products that have completed sputtering in the previous batch must be unloaded before new products to be sputtered can be loaded. During this process, the sputtering machine is in an idle state and cannot perform the core sputtering work, greatly prolonging the idle time of the machine. Moreover, some operation details in the loading and unloading processes, such as the cumbersome loading and unloading actions, inaccurate positioning, and slow transmission speed, further exacerbate the waste of time. According to statistics, in the entire production cycle, the time wasted due to the loading and unloading processes accounts for a relatively high proportion, seriously dragging down the production efficiency, making the output rate of products unable to meet the growing market demand, increasing the production cost, and weakening the competitiveness of enterprises in the market. Therefore, it is urgent to improve the loading and unloading design of traditional semiconductor mask sputtering machines to improve production efficiency, reduce production costs, and enhance the overall competitiveness of the industry. Summary of the Invention

[0005] To solve the above problems, the present invention provides a semiconductor sputtering method, which is characterized by including:

[0006] Placing a first object to be sputtered on a first fixing seat on a first sputtering carrier;

[0007] Pushing the first fixing seat into a pre-sputtering chamber for sputtering;

[0008] Close the gate of the pre-sputtering chamber and use a dry pump to evacuate it to a predetermined vacuum level;

[0009] Perform subsequent sputtering operations on the first object to be coated according to the process recipe;

[0010] During the sputtering of the first object to be coated, place the second object to be coated on the second fixing seat on the second sputtering carrier, then push the second fixing seat onto the lifting platform in the upper area of the lifting structure, and lower it via the lifting platform to wait in the lower area of the lifting structure;

[0011] After sputtering is completed, the first coated object retreats to the pre-sputtering chamber, open the gate to break the vacuum, and pull it out to the first sputtering carrier through the first fixing seat;

[0012] Raise the second fixing seat from the lower area of the lifting structure to the upper area of the lifting structure, and immediately push it into the pre-sputtering chamber, repeating the above process of evacuating the pre-sputtering chamber and sputtering operations;

[0013] During the sputtering of the second object to be coated, remove the first coated object from the first fixing seat of the first sputtering carrier, place the third object to be coated, and repeat all the above operation steps to achieve continuous semiconductor sputtering operations.

[0014] In an embodiment of the present invention, the subsequent sputtering operations include:

[0015] Perform a heating operation in the heating chamber;

[0016] Perform a formal sputtering operation in the sputtering chamber;

[0017] Perform a cooling operation in the cooling chamber; and

[0018] Retreat to the pre-sputtering chamber.

[0019] In another embodiment of the present invention, in the semiconductor sputtering process:

[0020] It is necessary to satisfy T(S)=T(L); and

[0021] T(S)+T(cool)=T(L);

[0022] Where T(L) is the loading / unloading time, which is 20 to 30 minutes; T(S) is the sputtering time, which is 40 to 50 minutes; T(cool) is the chamber cooling time, which is 5 to 15 minutes.

[0023] In another embodiment of the present invention, the T(L) time of objects to be coated with different sizes is not fixed. The loading / unloading time of small-sized objects to be coated T(L small)> the loading / unloading time of large-sized objects to be coated T(L large). When performing sputtering on objects to be coated with different sizes, there is an idle time T(idle). At this time:

[0024] It is necessary to satisfy T(S)=T(L large)+T(idle); and

[0025] T(S)+T(cool)=T(L large)+T(idle).

[0026] The present invention also provides a semiconductor sputtering system, which is characterized by comprising:

[0027] A sputtering carrier, including a first sputtering carrier and a second sputtering carrier. The first sputtering carrier is used to carry a first fixing seat for placing a first object to be plated, and the second sputtering carrier is used to carry a second fixing seat for placing a second object to be plated;

[0028] A sputtering machine cavity, provided with a gate that can be closed and opened, and connected to a dry pump, for receiving the fixing seat and the object to be plated pushed in from the sputtering carrier, and pumping the chamber to a predetermined vacuum degree through the dry pump after closing the gate;

[0029] A lifting structure, having an upper layer area, a lower layer area and a liftable lifting platform. The lifting platform is used to lower the second fixing seat placed on the second sputtering carrier from the upper layer area to the lower layer area to wait, and to lift the second fixing seat in the lower layer area to the upper layer area;

[0030] A conveying device, for pushing the first fixing seat from the first sputtering carrier into the sputtering machine cavity, and pulling the first fixing seat where the first plated object is located back to the first sputtering carrier from the sputtering machine cavity after sputtering; it is also used to push the second fixing seat from the second sputtering carrier to the upper layer area of the lifting structure, and to push the second fixing seat located in the upper layer area of the lifting structure into the sputtering machine cavity;

[0031] A control system, for controlling the opening and closing of the gate of the sputtering machine cavity, the operation of the dry pump, the lifting of the lifting platform, the movement of the conveying device, and the process execution of the sputtering machine cavity.

[0032] In an embodiment of the present invention, the fixing seat is specially designed, and its surface is made of a material with a high friction coefficient and stable chemical properties, which can firmly fix the object to be plated and prevent the object to be plated from shifting or shaking during subsequent pushing.

[0033] In another embodiment of the present invention, the pushing device is driven by a servo motor and can precisely adjust the movement speed and stroke according to the size and weight of the object to be plated.

[0034] In another embodiment of the present invention, the sputtering machine cavity includes:

[0035] A pre-sputtering chamber, for performing pre-sputtering treatment on the object to be plated;

[0036] A heating chamber, connected to the pre-sputtering chamber, for performing heating treatment on the object to be plated;

[0037] A sputtering chamber, which is connected to the heating chamber and is used to perform sputtering operations on the object to be plated sent from the pre-sputtering chamber according to a process recipe; and

[0038] A cooling chamber, which is connected to the sputtering chamber and is used to cool the plated object.

[0039] In another embodiment of the present invention, the conveying device includes a pushing mechanism and a pulling mechanism. The pushing mechanism is used to push the fixing base from the sputtering carrier into the sputtering machine cavity, send it from the pre-sputtering chamber to the subsequent chamber, push the second fixing base to the upper area of the lifting structure and into the pre-sputtering chamber, and the pulling mechanism is used to pull the first fixing base from the pre-sputtering chamber back to the first sputtering carrier.

[0040] In another embodiment of the present invention, the pre-sputtering chamber is provided with a vacuum sensor for detecting the vacuum degree in the chamber. The vacuum sensor is connected to the control system, and the control system controls the operation of the dry pump according to the vacuum degree information fed back by the vacuum sensor.

[0041] The present invention has the following beneficial effects:

[0042] (1) An up-and-down lifting structure (shutter) and another set of sputtering carriers are added in the middle of the original loading / unloading platform, realizing the mutual shuttling of the two groups. This design allows the equipment to perform loading, unloading, and sputtering operations simultaneously. When the first set of fixing bases is sputtering in the sputtering cavity, the second set of fixing bases can complete the loading of new objects to be plated during this time. Compared with the traditional single-fixing-base design, there is no need to wait for the sputtering to complete before replacing the materials, greatly shortening the single production cycle, significantly increasing the output per unit time, and achieving a qualitative leap in production efficiency.

[0043] (2) The operation mode in which the two sets of fixing bases do not interfere with each other makes full use of the operation time of the equipment. The sputtering cavity no longer has idle periods and always maintains high-efficiency operation. It not only reduces the idling time of the equipment but also enables the equipment to complete more sputtering processes within the same working hours, improving the utilization efficiency of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 Shows the schematic structural diagram of a semiconductor sputtering system in an embodiment of the present invention;

[0045] Figure 2 Shows the schematic structural diagram of the original sputtering platform in the prior art;

[0046] Figure 3 Shows the schematic diagram of the semiconductor sputtering process in an embodiment of the present invention and the time comparison diagram of the sputtering process in the prior art; and

[0047] Figure 4Shows the semiconductor sputtering process flow diagram in an embodiment of the present invention. Detailed implementation manners

[0048] In the following description, the present invention is described with reference to various embodiments. However, those skilled in the art will recognize that the embodiments can be implemented without one or more specific details or in combination with other alternative and / or additional methods, materials, or components. In other cases, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring the inventive points of the present invention. Similarly, for the purpose of explanation, specific quantities, materials, and configurations are set forth to provide a comprehensive understanding of the embodiments of the present invention. However, the present invention is not limited to these specific details.

[0049] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be construed as indicating or implying relative importance. In this specification, the reference to "an embodiment" or "the embodiment" means that the specific features, structures, or characteristics described in connection with the embodiment are included in at least one embodiment of the present invention. The phrase "in an embodiment" appearing throughout this specification does not necessarily refer to the same embodiment.

[0050] Figure 1 Shows the schematic structural diagram of a semiconductor sputtering system in an embodiment of the present invention.

[0051] As Figure 1 shown, this system includes:

[0052] Sputtering carriers. In this system, a first sputtering carrier 110 and a second sputtering carrier 120 are provided. The first sputtering carrier 110 is used to stably carry and place the first fixing seat for the first object to be plated, providing stable support and positioning for the first object to be plated before entering the sputtering process; the second sputtering carrier 120 is responsible for carrying and placing the second fixing seat for the second object to be plated, ensuring the orderly flow of the object to be plated in the system.

[0053] Sputtering machine cavity 300, which has a continuous process channel. They are respectively: a pre-sputtering chamber 301, a heating chamber 302, a sputtering chamber 303, and a cooling chamber 304.

[0054] Pre-sputtering chamber 301. This chamber is equipped with a gate that can be flexibly closed and opened and is connected to a dry pump. Its main function is to receive the fixing seat and the object to be plated pushed in from the sputtering carrier. When the object to be plated enters, the gate is quickly closed, and then through the operation of the dry pump, the environment in the chamber is pumped to a predetermined vacuum degree to create suitable vacuum conditions for the subsequent sputtering operation.

[0055] Heating chamber 302. In this chamber, the system will perform a heating operation according to a preset process recipe.

[0056] The sputtering chamber 303, in which the system performs precise sputtering operations on the object to be coated according to a preset process recipe to form a film that meets the requirements on the surface of the object to be coated.

[0057] The cooling chamber 304, in which the system performs a cooling operation according to a preset process recipe.

[0058] The lifting structure 200 has an upper layer area A0 and a lower layer area A2, and a lifting platform that can achieve the lifting function. The lifting platform can smoothly lower the second fixing seat placed on the second sputtering carrier from the upper layer area A0 to the lower layer area A2 for waiting, and can also accurately lift the second fixing seat in the lower layer area A2 to the upper layer area A0 at an appropriate time to achieve the orderly scheduling and storage of the object to be coated.

[0059] The conveying device is an important component for transferring the object to be coated between different chambers and carriers. It can accurately push the first fixing seat from the first sputtering carrier into the pre-sputtering chamber 301, and then send it from the pre-sputtering chamber to the heating chamber 302 and subsequent sputtering chamber 303 and cooling chamber 304; after sputtering, it can also pull the first fixing seat where the first coated object is located from the cooling chamber 304 back to the pre-sputtering chamber 301, and finally back to the first sputtering carrier. In addition, the conveying device is also responsible for pushing the second fixing seat from the second sputtering carrier to the upper layer area A0 of the lifting structure, and pushing the second fixing seat located in the upper layer area A0 of the lifting structure into the pre-sputtering chamber to ensure the high efficiency and smoothness of the entire material conveying process.

[0060] The control system, as the core of the entire semiconductor sputtering system, is responsible for coordinating and controlling the work of each component. It can precisely control the opening and closing actions of the gate of the sputtering machine cavity 300 to ensure the sealing and vacuum degree adjustment of the chamber; control the operation of the dry pump to achieve the predetermined vacuum degree requirement; control the lifting of the lifting structure 200 to ensure the orderly scheduling of the object to be coated; control the actions of the conveying device to achieve the accurate transfer of the object to be coated; and control the process execution of the sputtering machine cavity 300 to ensure that the sputtering process meets the preset process recipe.

[0061] The following will combine Figure 2 with the schematic diagram of the original sputtering platform structure in the prior art to elaborate on the differences between the present invention and the original technology.

[0062] The working principle of the original sputtering platform is as follows:

[0063] 1. Place the object to be coated near the fixing seat on the loading platform, and at this time the loading platform is located in Figure 2 the upper layer area A0 of the lifting structure;

[0064] 2. Push the fixing seat of the first sputtering carrier 110 into the pre-sputtering chamber 301 of the sputtering machine;

[0065] 3. Close the gate and evacuate with a dry pump;

[0066] 4. Perform sputtering in the sputtering machine cavity 300 according to the process recipe;

[0067] 5. After sputtering is completed, the sputtered object is retracted to the pre-sputtering chamber 301, and the vacuum is broken;

[0068] 6. Open the gate and pull out the fixing seat to the unloading platform. The loading and unloading are on the same platform, that is, the first sputtering carrier 110 in the present invention;

[0069] 7. Take out the sputtered objects from the vicinity of the fixing seat one by one;

[0070] Repeat steps 1-7.

[0071] Thus, it can be seen that in the original sputtering technology, after the sputtering of the previous batch is completed, the loading of the next batch of objects to be sputtered is carried out.

[0072] Figure 4 Shows the semiconductor sputtering flow chart in an embodiment of the present invention

[0073] As Figure 4 shown, the present invention provides a semiconductor sputtering method, including:

[0074] Place the first object to be sputtered on the first fixing seat on the first sputtering carrier 110. At this time, the first sputtering carrier is located in Figure 1 area A1;

[0075] Push the first fixing seat into the pre-sputtering chamber 301 of the sputtering machine cavity 300;

[0076] Close the gate of the pre-sputtering chamber 301 and evacuate it to a predetermined vacuum degree with a dry pump;

[0077] Perform sputtering on the first object to be sputtered in the sputtering machine cavity 300 according to the process recipe;

[0078] During the sputtering of the first object to be sputtered, place the second object to be sputtered on the second fixing seat, place the second fixing seat on the second sputtering carrier 120, and then push the second fixing seat to the upper area A0 of the lifting structure and lower it to the lower area A2 of the lifting structure via the lifting platform to wait;

[0079] After sputtering is completed, the first sputtered object is retracted to the pre-sputtering chamber 301, open the gate to break the vacuum, and pull it out to the first sputtering carrier 110 through the first fixing seat;

[0080] Raise the second fixing base from the lower layer area A2 of the lifting structure to the upper layer area A0 of the lifting structure, and immediately push it into the pre-sputtering chamber 301 for sputtering. Repeat the above sputtering operation process;

[0081] During the sputtering of the second workpiece to be plated, remove the first plated workpiece from the first fixing base of the first sputtering carrier 110, place the third workpiece to be plated, and repeat all the above operation steps to achieve continuous semiconductor sputtering operation.

[0082] As can be seen from the above process, the present invention adds a vertically movable structure (shutter) and another set of sputtering carriers in the middle of the original loading / unloading platform, realizing the mutual shuttling of the two groups. This design allows the equipment to perform loading, unloading, and sputtering operations simultaneously. When the first set of fixing bases is sputtering in the sputtering chamber, the second set of fixing bases can complete the loading of the new workpiece to be plated during this time. Compared with the traditional single-fixing-base design, there is no need to wait for the sputtering to complete before replacing the material, greatly shortening the single production cycle, significantly increasing the output per unit time, and achieving a qualitative leap in production efficiency.

[0083] Figure 3 Shows the schematic diagram of the sputtering process time in the present invention and the prior art.

[0084] The production process of general large-scale sputtering equipment generally includes two parts:

[0085] T(L): Loading / Unloading (Original sputtering platform steps 1, 2, 3, 5, 6, 7)

[0086] T(S): Sputtering (Original sputtering platform step 4)

[0087] As shown in the figure, in the original sputtering process, after the sputtering operation of the first workpiece to be plated P1 is completed, the loading operation of the subsequent second workpiece to be plated P2 is carried out. However, in the present invention, during the sputtering process of the first workpiece to be plated P1, the loading operation of the second workpiece to be plated P2 is carried out, so that immediately after the sputtering operation of the first workpiece to be plated P1 is completed, the sputtering operation of the second workpiece to be plated P2 can be carried out.

[0088] In an embodiment of the present invention, the optimal production volume needs to satisfy T(S)=T(L). Where T(L) is the loading / unloading time, generally 20 to 30 minutes. This is because in actual production, the loading and unloading processes involve operations such as the handling, positioning, and fixing of the workpiece to be plated, and the time is affected by factors such as the size, weight of the workpiece to be plated, and the efficiency of the handling equipment. T(S) is the sputtering time, generally 40 to 50 minutes. The sputtering time mainly depends on process recipes, the type of sputtering target, and sputtering parameters. When T(S)=T(L), it means that the loading / unloading and sputtering processes can be perfectly matched, and there will be no waiting or backlog in each link of the production line, thus achieving the optimal production volume.

[0089] In another embodiment of the present invention, the optimal operating state needs to satisfy T(S) + T(cool) = T(L). Here, T(cool) is the cavity cooling time, generally 5 to 15 minutes. During the sputtering process, a large amount of heat is generated in the cavity, and cooling treatment is required to ensure the normal operation of the equipment and the sputtering quality. When T(S) + T(cool) = T(L), it means that while a sputtering and cavity cooling cycle is completed, the loading / unloading process is also just completed, and the entire production system is in an efficient and stable operating state, with the highest equipment utilization rate.

[0090] In an embodiment of the present invention, if there are differences in the sizes of the objects to be plated in different batches, the loading / unloading time T(L small) for small-sized objects to be plated is greater than the loading / unloading time T(L large) for large-sized objects to be plated. This is because although small-sized objects have a small volume, more precise positioning and operation are required during the loading / unloading process to avoid problems such as inaccurate placement or collisions, so the loading / unloading time is relatively long. For large-sized objects, due to their large volume, they are relatively easy to handle and position, but due to their large surface area, the sputtering time may be longer. When sputtering objects of different sizes, there is an idle time T(idle).

[0091] At this time, the optimal production volume needs to satisfy T(S) = T(L large) + T(idle). This means that after considering the loading / unloading time and idle time of large-sized objects to be plated, the sputtering time is matched, enabling the production line to achieve the best production efficiency when processing objects of different sizes. The optimal operating state needs to satisfy T(S) + T(cool) = T(L large) + T(idle), that is, when the sum of the sputtering time and the cavity cooling time is equal to the sum of the loading / unloading time and the idle time of large-sized objects to be plated, the entire production system is in the best operating state, the equipment can be fully utilized, and at the same time, the continuity and stability of production are ensured. In actual production, the operating speed of the loading / unloading equipment and the sputtering process parameters can be reasonably adjusted according to the size of the objects to be plated and the production tasks to optimize the time allocation of T(L), T(S), and T(cool) and achieve the best production effect.

[0092] Although the above embodiments have been described, those skilled in the art can make additional changes and modifications once they know the basic creative concept. Therefore, the above description is only an embodiment of the present invention, and it does not limit the patent protection scope of the present invention. Any equivalent structural or equivalent process transformation made using the content of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, is similarly included in the patent protection scope of the present invention.

Claims

1. A semiconductor sputtering method, characterized in that: Including: A first fixing seat for placing a first object to be plated on a first sputtering carrier; Pushing the first fixing seat into a pre-sputtering chamber for sputtering; Closing the gate of the pre-sputtering chamber and using a dry pump to pump it to a predetermined vacuum degree; Performing subsequent sputtering operations on the first object to be plated according to a process recipe; During the sputtering of the first object to be plated, placing a second object to be plated on a second fixing seat of a second sputtering carrier, then pushing the second fixing seat onto a lifting platform in the upper area of the lifting structure, and lowering it to the lower area of the lifting structure via the lifting platform to wait; After sputtering, the first plated object retreats to the pre-sputtering chamber, the gate is opened to break the vacuum, and it is pulled out to the first sputtering carrier through the first fixing seat; Raising the second fixing seat from the lower area of the lifting structure to the upper area of the lifting structure, and immediately pushing it into the pre-sputtering chamber, repeating the above process of pumping the pre-sputtering chamber to vacuum and sputtering operation; During the sputtering of the second object to be plated, removing the first plated object from the first fixing seat of the first sputtering carrier, putting in a third object to be plated, and repeating all the above operation steps to achieve continuous semiconductor sputtering operation.

2. The semiconductor sputtering method according to claim 1, wherein: The subsequent sputtering operations include: Performing a heating operation in a heating chamber; Performing a formal sputtering operation in a sputtering chamber; Performing a cooling operation in a cooling chamber; and Retreating to the pre-sputtering chamber.

3. The semiconductor sputtering method according to claim 1, wherein: In the semiconductor sputtering process: It is necessary to satisfy T(S)=T(L); and T(S)+T(cool)=T(L); Where T(L) is the loading / unloading time, which is 20 to 30 minutes; T(S) is the sputtering time, which is 40 to 50 minutes; T(cool) is the chamber cooling time, which is 5 to 15 minutes.

4. The semiconductor sputtering method according to claim 3, wherein: For objects to be plated of different sizes, the T(L) time is not fixed. The loading / unloading time T(L small) of small-sized objects to be plated > the loading / unloading time T(L large) of large-sized objects to be plated. When performing sputtering on objects to be plated of different sizes, there is an idle time T(idle). At this time: It is necessary to satisfy T(S)=T(L large)+T(idle); and T(S)+T(cool)=T(L large)+T(idle).

5. A semiconductor sputtering system, characterized in that: Including: Sputtering carriers, including a first sputtering carrier and a second sputtering carrier. The first sputtering carrier is used to carry the first fixing seat for placing the first object to be plated, and the second sputtering carrier is used to carry the second fixing seat for placing the second object to be plated; A sputtering machine chamber, provided with a closable and openable gate, and connected to a dry pump, for receiving the fixing seat and the object to be plated pushed in from the sputtering carrier, and pumping the chamber to a predetermined vacuum degree through the dry pump after closing the gate; A lifting structure, having an upper area, a lower area, and a liftable lifting platform. The lifting platform is used to lower the second fixing seat placed on the second sputtering carrier from the upper area to the lower area to wait, and to raise the second fixing seat in the lower area to the upper area; A conveying device, used to push the first fixing seat from the first sputtering carrier into the sputtering machine chamber, and pull back the first fixing seat where the first plated object is located from the sputtering machine chamber to the first sputtering carrier after sputtering; also used to push the second fixing seat from the second sputtering carrier to the upper area of the lifting structure, and push the second fixing seat located in the upper area of the lifting structure into the sputtering machine chamber; The control system is used to control the opening and closing of the sputtering machine chamber gate, the operation of the dry pump, the lifting and lowering of the lifting platform, the movement of the conveying device and the process execution of the sputtering machine chamber.

6. The semiconductor sputtering system according to claim 5, wherein: The fixing seat is specially designed, and its surface is made of a material with a high friction coefficient and stable chemical properties, which can firmly fix the object to be plated and prevent the object to be plated from displacement or shaking during the subsequent pushing process.

7. The semiconductor sputtering system according to claim 5, characterized in that The pushing device is driven by a servo motor and can accurately adjust the movement speed and stroke according to the size and weight of the object to be plated.

8. The semiconductor sputtering system according to claim 5, wherein: The sputtering machine chamber comprises: A pre-sputtering chamber, used for pre-sputtering treatment of the object to be plated; A temperature-raising chamber, connected to the pre-sputtering chamber, for performing a temperature-raising treatment on the object to be plated; a sputtering chamber, connected to the temperature rising chamber, for performing a sputtering operation on the object to be plated sent from the pre-sputtering chamber according to a process recipe; and The cooling chamber is connected with the sputtering chamber and is used for cooling the plated object.

9. The semiconductor sputtering system according to claim 5, wherein: The conveying device includes a pushing mechanism and a pulling mechanism. The pushing mechanism is used to push the fixed seat from the sputtering carrier into the sputtering machine cavity, from the pre-sputtering chamber into the subsequent chamber, and push the second fixed seat to the upper area of ​​the lifting structure and advance into the pre-sputtering chamber. The pulling mechanism is used to pull the first fixed seat back from the pre-sputtering chamber to the first sputtering carrier.

10. The semiconductor sputtering system according to claim 5, wherein: The pre-sputtering chamber is provided with a vacuum sensor for detecting the vacuum degree in the chamber. The vacuum sensor is connected to a control system. The control system controls the operation of the dry pump according to the vacuum degree information fed back by the vacuum sensor.

Images