Semiconductor silicon carbide coating device, system and method and readable storage medium

Abstract

The invention discloses a semiconductor silicon carbide coating device, system and method and a readable storage medium, and belongs to the field of semiconductor coatings. The problems that existing silicon carbide coating equipment is complex in operation, and various by-products generated after decomposition severely affect the quality of the silicon carbide coating are solved. According to the technical scheme adopted for solving the technical problem, the coating device comprises a coating cavity and a control system, an MTS gas conveying system is connected to the side of an MTS decomposition area in the coating cavity, a tail gas treatment system is connected to the side of an electric field regulation and control deposition area in the coating cavity, a plasma reaction area is further arranged between the MTS decomposition area and the electric field regulation and control deposition area in the coating cavity, and the control system is connected to the control system. The electric field regulation and control deposition area is provided with a substrate loading mechanism and a voltage source, the negative electrode of the voltage source is connected to the substrate loading mechanism, the positive electrode of the voltage source is connected to the side wall of the coating cavity, so that a potential difference is formed between the substrate loading mechanism and the side wall of the coating cavity, and the plasma reaction area is provided with a radio frequency electric field generating device; the method is applied to the silicon carbide coating.

Description

Technical Field

[0001] The present invention provides a semiconductor silicon carbide coating device, system, method and readable storage medium, belonging to the technical field of semiconductor coating. Background Art

[0002] The silicon carbide coated products produced by SiC CVD equipment have a wide range of applications in many high-tech fields, mainly used for the coating preparation of core components such as silicon-based semiconductor crystal pulling equipment, silicon and silicon carbide chip oxidation equipment, annealing equipment, silicon epitaxy, silicon carbide epitaxy, MOCVD, ion implantation, etching machine equipment, etc. The silicon carbide coating can improve the heat resistance, corrosion resistance and wear resistance of the device, thereby extending the service life of the device and improving its performance. When the silicon carbide coating equipment performs matrix coating, it needs to go through matrix pretreatment, mixing of MTS and H 2 After mixing, it is introduced into the reaction chamber, and MTS undergoes high-temperature decomposition at a certain temperature and pressure. The decomposition formula is as follows: CH 3 SiCl 3 (g)+H 2 (g)→SiC(g)+3HCl(g)+CH 4 (g).

[0003] In order to grow qualified β-type SiC on the surface of the matrix material, the following influencing factors need to be controlled during the process of producing silicon carbide coated products by SiC CVD equipment: the uniformity of the thermal field reaction temperature, that is, the axial temperature difference control of a large-size chamber (such as a 12-inch wafer equipment), the selection of the high-temperature flow field pressure, the uniformity of the coating thickness, the purity of the coated product, the uniformity of the high-temperature gas flow field, the proportional relationship between the ventilation volume of the mixed gas of MTS and H 2 The structure of the mixed gas inlet cavity, the appearance structure and position of the mixed gas inlet nozzle, the structure and relative position of the matrix tooling, the control of the rotation speed of the matrix tooling, the structure form of the pumping cavity, the corrosion of the equipment by the by-product HCl (g) and the pollution of the coating, the control of the residence time of the reaction gas on the matrix surface, etc. In addition, during the decomposition process of MTS, it is also necessary to control the generation of by-products such as SiCl 2 (g), Si (s), C (s), SiO2 (s), CO (g), etc. These by-products seriously affect the surface coating purity, uniformity, silicon-carbon ratio, grain size, crystal form and hardness of the SiC coating and other product technical indicators.

[0004] Therefore, there is an urgent need to design a silicon carbide coating device that can not only simplify the operation process but also avoid the influence of other by-products on the coating performance index when growing a silicon carbide coating on the matrix. Summary of the Invention

[0005] In order to solve the technical problems that the existing silicon carbide coating equipment is complex to operate and the various by-products generated after decomposition seriously affect the quality of the silicon carbide coating, the present invention proposes a semiconductor silicon carbide coating device capable of directional movement of SiC, aiming to improve the uniformity and purity of the silicon carbide coating deposited on the substrate by improving the hardware structure of the silicon carbide coating equipment or the combined connection of hardware modules and / or circuits.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is: a semiconductor silicon carbide coating device, including a coating chamber and a control system. An MTS gas delivery system is connected to the side of the MTS decomposition area in the coating chamber, a tail gas treatment system is connected to the side of the electric field regulation deposition area in the coating chamber, and a plasma reaction area is also provided between the MTS decomposition area and the electric field regulation deposition area in the coating chamber; The electric field regulation deposition area is provided with a substrate loading mechanism and a voltage source. The negative pole of the voltage source is connected to the substrate loading mechanism, and the positive pole of the voltage source is connected to the side wall of the coating chamber, so as to form a potential difference between the substrate loading mechanism and the side wall of the coating chamber; The plasma reaction area is provided with a radio frequency electric field generating device.

[0007] Further, a heat preservation system is provided at the side wall end of the coating chamber, a heating system and a temperature measuring system are provided in the chamber of the coating chamber, and both the heating system and the temperature measuring system are electrically connected to the control system.

[0008] Further, a vacuum system is also provided between the coating chamber and the tail gas treatment system.

[0009] Further, the radio frequency electric field generating device is a radio frequency power source or a microwave power source.

[0010] Further, the substrate loading mechanism is connected to the output shaft of the motor.

[0011] Further, the coating chamber is also connected with a vacuum gauge, and the vacuum gauge is arranged in the MTS decomposition area.

[0012] A semiconductor silicon carbide coating system includes the semiconductor silicon carbide coating device described above.

[0013] A method for preparing a silicon carbide coating based on the semiconductor silicon carbide coating device uses the semiconductor silicon carbide coating device described above.

[0014] A readable storage medium stores a computer program, and when the computer program is executed by a processor, the method steps described in the method for preparing the silicon carbide coating are realized.

[0015] The beneficial effects of the present invention compared with the prior art are: 1. The present invention provides a voltage source, with the negative pole of the voltage source connected to the substrate loading mechanism and the positive pole connected to the side wall of the coating chamber. An electric field is formed in the electric field-controlled deposition region. Under the guidance of the electric field, the deposition direction of the charged plasma can be effectively controlled, reducing the thickness difference between the edge and the center of the coating on the substrate and avoiding the problem of uneven thickness of the silicon carbide coating. 2. Positively charged Si + and C + move towards the substrate loading mechanism with a negative voltage applied under the action of the electric field and form a uniform silicon carbide coating on the surface of the substrate. Negative ions are adsorbed onto the side wall of the top of the coating chamber with a positive voltage applied under the action of the electric field. The generated solid by-products are pumped out of the coating chamber by a vacuum pump in the vacuum system and discharged. When coating the silicon carbide coating on the substrate, interference from other free electrons is avoided, effectively improving the purity of the silicon carbide coating and ensuring the silicon-carbon ratio. 3. The radio frequency electric field generated by the radio frequency electric field generating device in the plasma reaction region of the present invention can activate the plasma. The activated plasma can promote the bonding force between silicon carbide molecules, reduce the porosity of the silicon carbide coating, and improve the hardness and density of the silicon carbide coating, etc. 4. The substrate loading mechanism of the present invention can rotate driven by a motor. According to the different shapes of the substrates, the angular position between the substrate loading mechanism and the plasma reaction region can be adjusted to meet the requirements for preparing silicon carbide coatings on special-shaped substrates. 5. The present invention integrates the MTS decomposition region, the plasma reaction region, and the electric field-controlled deposition region in the coating chamber. Under the action of the electric field, the parameters to be controlled by the silicon carbide coating device can be reduced, and the purpose of depositing a silicon carbide coating on the substrate can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The present invention will be further described below with reference to the drawings: Figure 1 is a schematic structural diagram of the present invention; In the figure: 1 is the coating chamber, 2 is the MTS gas delivery system, 3 is the MTS decomposition region, 4 is the plasma reaction region, 5 is the electric field-controlled deposition region, 6 is the tail gas treatment system, 7 is the substrate loading mechanism, 8 is the radio frequency electric field generating device, 9 is the heat preservation system, 10 is the heating system, 11 is the temperature measurement system, 12 is the vacuum system, 13 is the vacuum gauge, and 14 is the substrate. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0017] In the description of the present invention, it should be understood that the orientation or positional relationships indicated by the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are relative orientation or positional relationships. These are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise stated, the meaning of "a plurality" is two or more.

[0018] In the description of the present invention, it should be noted that unless otherwise clearly specified and defined, the terms "mounted", "connected", "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood through specific circumstances.

[0019] As Figure 1 shown, the present invention provides a semiconductor silicon carbide coating device, which includes a coating chamber 1 and a control system. A MTS gas delivery system 2 is connected to the side of the MTS decomposition zone in the coating chamber 1 (hereinafter referred to as "MTS"), and an exhaust gas treatment system 6 is connected to the side of the electric field regulation deposition zone 5 in the coating chamber 1. A plasma reaction zone 4 is also provided between the MTS decomposition zone 3 and the electric field regulation deposition zone 5 in the coating chamber 1.

[0020] Specifically, the MTS decomposition zone 3, the plasma reaction zone 4, and the electric field regulation deposition zone 5 are sequentially distributed in the chamber of the coating chamber 1. Among them, the MTS decomposition zone 3 is located on the left side in the coating chamber 1 and is in communication with the MTS gas delivery system 2. In the MTS gas delivery system 2, the MTS liquid is converted into MTS gas through a bubbling tank or an evaporator and then enters the MTS decomposition zone 3 through the carrier gas. The control system controls the heating system 10 and the temperature measurement system 11 to ensure that the temperature of the MTS decomposition zone 3 can decompose the MTS gas. The MTS gas decomposes into SiC gas under the action of high temperature, and at the same time contains a variety of by-products, including HCl(g), CH 4 (g), SiCl 2 (g), CCl 2 (g), Si(s), C(s), SiO2 (s), etc. The decomposed SiC gas and its by-products are introduced into the plasma reaction zone 4. An RF electric field generating device 8 is installed in the plasma reaction zone 4. The RF electric field generating device 8 is an RF power supply or a microwave power supply. After operating the RF electric field generating device 8 to generate an RF electric field, the SiC gas and its gas by-products are all converted into charged plasma. Taking SiCl 2 (g) and CCl 2 (g) by-products as an example, the conversion process is as follows: SiCl 2 + e - → Si + + 2Cl - + e - ; CCl 2 + e - → C + + 2Cl - + e - ; It can be seen from this that the plasma includes positively charged Si + , C + and negative ions. The negative ions here are mainly Cl - .

[0021] In the electric field-controlled deposition area 5, a substrate loading mechanism 7 and a voltage source are installed. A substrate 14 is placed on the substrate loading mechanism 7. The negative electrode of the voltage source is connected to the substrate loading mechanism 7, and the positive electrode of the voltage source is connected to the side wall of the coating chamber 1, so as to form a potential difference between the substrate loading mechanism 7 and the side wall of the coating chamber 1.

[0022] Specifically, a negative voltage is applied to the back of the substrate loading mechanism 7. The positively charged Si + and C + are accelerated by the electric field and are directionally adsorbed onto the surface to be coated on the substrate 14 to form a silicon carbide coating. The substrate loading mechanism 7 is fixedly connected to the output shaft of the motor. The motor can drive the substrate loading mechanism 7 to rotate to adjust the relative angle and position relationship between the surface to be coated on the substrate 14 and the plasma reaction zone 4, so as to meet the coating requirements of the substrate 14. A positive voltage is applied to the side wall of the coating chamber 1. Specifically, a positive voltage is applied to the side wall at the top of the coating chamber 1. The negative ions are adsorbed onto the side wall at the top of the coating chamber 1. The solid by-products generated after the decomposition of the MTS gas are pumped out of the coating chamber 1 by the vacuum pump in the vacuum system 12 and then discharged. In this way, when coating the silicon carbide coating on the substrate 14, the interference of other free electrons is avoided, and the quality of the silicon carbide coating is improved.

[0023] The electric field-controlled deposition area 5 is located on the right side inside the coating chamber 1. The electric field-controlled deposition area 5 is connected to the tail gas treatment system 6 through the vacuum system 12 to discharge the solid by-products in the coating chamber 1.

[0024] A thermal insulation system 9 is installed on the side wall of the coating chamber 1, and a heating system 10 and a temperature measuring system 11 are installed inside the chamber of the coating chamber 1. Both the heating system 10 and the temperature measuring system 11 are electrically connected to the control system. After receiving the temperature signal inside the coating chamber 1 collected by the temperature measuring system 11, the control system transmits it to the heating system 10. The heating system 10 adjusts various heating parameters according to this temperature signal to achieve the temperature environment required for preparing the silicon carbide coating. The setting of various parameters for the temperature environment required for preparing the silicon carbide coating is a conventional technique in the art and will not be elaborated here.

[0025] The coating chamber 1 is also connected to a vacuum gauge 13, and the vacuum gauge 13 is installed in the MTS decomposition zone 3.

[0026] A semiconductor silicon carbide coating system provided by the present invention includes the above-mentioned semiconductor silicon carbide coating device.

[0027] A method for preparing a silicon carbide coating based on a semiconductor silicon carbide coating device provided by the present invention uses the above-mentioned semiconductor silicon carbide coating device.

[0028] A readable storage medium provided by the present invention has a computer program stored thereon. When the computer program is executed by a processor, the above-mentioned method steps are implemented.

[0029] The working principle of the present invention is as follows: After the MTS liquid is put into the MTS gas delivery system 2, it is converted into MTS gas. The MTS gas enters the MTS decomposition zone 3 inside the coating chamber 1 through the carrier gas. The MTS gas is decomposed into SiC gas in the MTS decomposition zone 3, and various by-products are generated at the same time. The by-products include gas by-products and solid by-products. The gas by-products and SiC gas are converted into charged plasma under the action of the radio frequency electric field generated by the radio frequency electric field generating device 8. The plasma includes positively charged Si + and C + and negative ions. The positively charged Si + and C + move directionally under the action of the electric field to the substrate loading mechanism 7 applied with a negative voltage and form a uniform silicon carbide coating on the surface of the substrate 14. The negative ions are adsorbed to the side wall of the top of the coating chamber 1 applied with a positive voltage under the action of the electric field. The generated solid by-products are pumped out of the coating chamber 1 by the vacuum pump in the vacuum system 12 and then discharged.

[0030] Regarding the specific structure of the present invention, it should be noted that the connection relationships between the various component modules adopted by the present invention are definite and achievable. Except for the special descriptions in the embodiments, the specific connection relationships can bring corresponding technical effects, and on the premise of not relying on the execution of corresponding software programs, the technical problems proposed by the present invention can be solved. The models of the components, modules, and specific components, the connection methods between them, and the conventional usage methods and predictable technical effects brought by the above technical features, except for the specific descriptions, all belong to the publicly disclosed content in patents, journal papers, technical manuals, technical dictionaries, and textbooks that those skilled in the art can obtain before the filing date, or belong to the prior art such as the conventional techniques and common general knowledge in the art, and need not be elaborated. This makes the technical solution provided in this case clear, complete, and achievable, and the corresponding physical product can be reproduced or obtained according to this technical means.

[0031] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A semiconductor silicon carbide coating device, characterized in that: The coating chamber (1) comprises a coating chamber (1) and a control system, wherein the MTS decomposition zone (3) in the coating chamber (1) is connected to an MTS gas delivery system (2), the electric field regulation deposition zone (5) in the coating chamber (1) is connected to an exhaust gas treatment system (6), and a plasma reaction zone (4) is further provided between the MTS decomposition zone (3) and the electric field regulation deposition zone (5) in the coating chamber (1); The electric field controlled deposition area (5) is provided with a substrate loading mechanism (7) and a voltage source, the negative electrode of the voltage source is connected to the substrate loading mechanism (7), and the positive electrode of the voltage source is connected to the side wall of the coating chamber (1), so that a potential difference is formed between the substrate loading mechanism (7) and the side wall of the coating chamber (1); The plasma reaction zone (4) is provided with a radio frequency electric field generating device (8).

2. A semiconductor silicon carbide coating device according to claim 1, characterized in that: A heat preservation system (9) is arranged at the side wall end of the coating chamber (1), and a heating system (10) and a temperature measurement system (11) are arranged inside the coating chamber (1), and the heating system (10) and the temperature measurement system (11) are both electrically connected to a control system.

3. A semiconductor silicon carbide coating device according to claim 1, characterized in that: A vacuum system (12) is also provided between the coating chamber (1) and the tail gas treatment system (6).

4. A semiconductor silicon carbide coating device according to claim 1, characterized in that: The radio frequency electric field generating device (8) is a radio frequency power source or a microwave power source.

5. A semiconductor silicon carbide coating device according to claim 1, characterized in that: The substrate loading mechanism (7) is connected to the output shaft of the motor.

6. A semiconductor silicon carbide coating device according to claim 1, characterized in that: The coating chamber (1) is also connected to a vacuum gauge (13), and the vacuum gauge (13) is arranged in the MTS decomposition area (3).

7. A semiconductor silicon carbide coating system, characterized in that: A semiconductor silicon carbide coating device comprising the device described in any one of claims 1 to 6.

8. A method for preparing a silicon carbide coating based on a semiconductor silicon carbide coating device, characterized in that: A semiconductor silicon carbide coating device as claimed in any one of claims 1 to 6 is used.

9. A readable storage medium, characterized in that: The readable storage medium stores a computer program, and when the computer program is executed by a processor, the method steps according to claim 8 are implemented.

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