Source bottle device, application method thereof and semiconductor deposition equipment

Abstract

The invention discloses a source bottle device, a using method thereof and semiconductor deposition equipment, and relates to the technical field of semiconductors. The source bottle device comprises a source bottle, a heating sleeve and a heating piece. The heating sleeve is arranged outside the source bottle in a sleeving mode, the heating piece is installed in the source bottle, the source bottle is provided with an air outlet and a filling opening, and the heating sleeve is used for heating the source bottle, so that a solid organic metal source loaded into the source bottle through the filling opening is sublimated for the first time, and evaporated or sublimated impurities in the solid organic metal source are driven to be discharged through the air outlet. And the heating element is used for desublimating the gaseous organic metal source formed by primary sublimation, and is also used for heating the solid organic metal source desublimated on the surface of the heating element, so that the solid organic metal source sublimates again and is output outwards through the gas outlet. According to the source bottle device provided by the invention, two times of sublimation of the solid organic metal source can be realized, so that the stability of output gas pressure is improved, the purity of output gas is improved, and the stability and deposition effect of a deposition process are ensured.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and more particularly, to a source bottle device, a method for using the same, and a semiconductor deposition apparatus. Background Art

[0002] Currently, during the semiconductor deposition process, a source bottle is required to heat a solid organometallic source to sublime it into a gaseous organometallic source, and then deposit the gaseous organometallic source on the surface of a substrate. The current source bottles are generally flat, and the solid organometallic source inside is sublimated by directly heating the source bottle, and the gaseous organometallic source is output outward for the deposition process. However, in this way, after the solid source is heated and sublimated, it may agglomerate from a powder form into larger lumps, thus affecting the overall heating and sublimation process, resulting in unstable output pressure. And because there are certain impurities in the solid organometallic source, certain impurity gases will be entrained during its sublimation process, leading to unstable sublimation rate, unstable output pressure, and low purity of the gaseous organometallic source, directly affecting the stability and deposition effect of the deposition process.

[0003] In view of this, it is particularly important to design a source bottle device, a method for using the same, and a semiconductor deposition apparatus with stable output pressure and high purity of the output gas, especially in semiconductor production. Summary of the Invention

[0004] An object of the present invention is to provide a source bottle device that can achieve two-stage sublimation of a solid organometallic source, so as to improve the stability of the output pressure, improve the purity of the output gas, and ensure the stability and deposition effect of the deposition process.

[0005] Another object of the present invention is to provide a method for using a source bottle device that can achieve two-stage sublimation of a solid organometallic source, so as to improve the stability of the output pressure, improve the purity of the output gas, and ensure the stability and deposition effect of the deposition process.

[0006] Another object of the present invention is to provide a semiconductor deposition apparatus, in which the source bottle device can achieve two-stage sublimation of a solid organometallic source, so as to improve the stability of the output pressure, improve the purity of the output gas, and ensure the stability and deposition effect of the deposition process.

[0007] The present invention is implemented by adopting the following technical solutions.

[0008] A source bottle device includes a source bottle, a heating jacket, and a heating element. The heating jacket is sleeved outside the source bottle, and the heating element is installed inside the source bottle. The source bottle is provided with an air outlet and a filling port. The heating jacket is used to heat the source bottle so that the solid organic metal source filled into the source bottle through the filling port sublimes for the first time, and drives the impurities evaporated or sublimated therein to be discharged through the air outlet. The heating element is used to condense the gaseous organic metal source formed by the first sublimation, and the heating element is also used to heat the solid organic metal source condensed on its surface so that the solid organic metal source sublimes again and is output outward through the air outlet.

[0009] Optionally, the heating element includes an electric heating pipeline and a connection end. The connection end is installed on the source bottle, and the electric heating pipeline is arranged inside the source bottle. One end of the electric heating pipeline is connected to the positive terminal of the connection end, and the other end is connected to the negative terminal of the connection end.

[0010] Optionally, the electric heating pipeline includes a first connection section, a heating section, and a second connection section connected in sequence. The first connection section is connected to the positive terminal, the second connection section is connected to the negative terminal, and the heating section is arranged in a meandering shape.

[0011] Optionally, the number of heating sections is multiple, and the multiple heating sections are arranged in parallel at intervals along the height direction of the source bottle, and adjacent two heating sections are connected by a third connection section.

[0012] Optionally, the heating section is arranged in a spiral shape, and the plane where the heating section is located is parallel to the bottom wall of the source bottle.

[0013] Optionally, the heating element further includes a cooling pipeline. The cooling pipeline is arranged inside the electric heating pipeline and is used for cooling water to pass through to cool the electric heating pipeline.

[0014] Optionally, the source bottle device further includes an inlet pipe. The inlet pipe extends into the source bottle. The inlet pipe is provided with air holes. The air holes are arranged at the bottom of the source bottle and are located below the heating element. The air holes are used for the inert gas introduced into the inlet pipe to flow out.

[0015] A method for using a source bottle device, which is applied to the above source bottle device. The method for using the source bottle device includes:

[0016] S1: Fill the solid organic metal source into the source bottle through the filling port;

[0017] S2: Heat the heating jacket to a first preset temperature and heat the heating element to a second preset temperature so that the solid organic metal source sublimes for the first time and drives the impurities evaporated or sublimated therein to be discharged through the air outlet;

[0018] S3: Keep the heating jacket at the first preset temperature and cool the heating element so that the gaseous organic metal source formed by the first sublimation condenses on the surface of the heating element;

[0019] S4: Cool down the heating jacket to a temperature lower than the first preset temperature, and heat the heating element to the first preset temperature, so that the solid organic metal source sublimated on the surface of the heating element sublimes again and is output outward through the air outlet.

[0020] Optionally, in S2, the second preset temperature is greater than the first preset temperature.

[0021] Optionally, in S2 and S4, an inert gas is introduced into the source bottle through the inlet pipe.

[0022] Optionally, the heating element includes an electric heating pipeline and a cooling pipeline, and the cooling pipeline is arranged inside the electric heating pipeline; in S3, the step of cooling down the heating element includes: pausing the electric heating pipeline; and / or, introducing cooling water into the cooling pipeline.

[0023] Optionally, after S4, the usage method of the source bottle device further includes: if there is still solid organic metal source remaining on the inner wall of the source bottle, cool down the heating element and heat the heating jacket to the first preset temperature, so that the solid organic metal source remaining on the inner wall of the source bottle sublimes and condenses on the surface of the heating element.

[0024] A semiconductor deposition device includes the above-mentioned source bottle device. The source bottle device includes a source bottle, a heating jacket, and a heating element. The heating jacket is sleeved outside the source bottle, and the heating element is installed inside the source bottle. The source bottle is provided with an air outlet and a filling port. The heating jacket is used to heat the source bottle, so that the solid organic metal source filled into the source bottle through the filling port sublimates for the first time, and drives the evaporated or sublimated impurities therein to be discharged through the air outlet. The heating element is used for the gaseous organic metal source formed by the first sublimation to condense, and the heating element is also used to heat the solid organic metal source condensed on its surface, so that the solid organic metal source sublimates again and is output outward through the air outlet.

[0025] The source bottle device, its usage method, and the semiconductor deposition device provided by the present invention have the following

[0026] Beneficial effects:

[0027] The source bottle device provided by the present invention has a heating sleeve sleeved outside the source bottle, and a heating element is installed inside the source bottle. The source bottle is provided with an air outlet and a filling port. The heating sleeve is used to heat the source bottle so that the solid organic metal source filled into the source bottle through the filling port is sublimated for the first time, and drives the impurities evaporated or sublimated therein to be discharged through the air outlet. The heating element is used for the condensation of the gaseous organic metal source formed by the first sublimation, and the heating element is also used to heat the solid organic metal source condensed on its surface so that the solid organic metal source is sublimated again and output outward through the air outlet. Compared with the prior art, since the source bottle device provided by the present invention adopts a heating sleeve sleeved outside the source bottle and a heating element installed inside the source bottle, it can realize the two sublimations of the solid organic metal source, so as to improve the stability of the output air pressure, improve the purity of the output gas, and ensure the stability of the deposition process and the deposition effect.

[0028] The usage method of the source bottle device provided by the present invention is applied to the source bottle device, and can realize the two sublimations of the solid organic metal source, so as to improve the stability of the output air pressure, improve the purity of the output gas, and ensure the stability of the deposition process and the deposition effect.

[0029] The semiconductor deposition equipment provided by the present invention, in which the source bottle device can realize the two sublimations of the solid organic metal source, so as to improve the stability of the output air pressure, improve the purity of the output gas, and ensure the stability of the deposition process and the deposition effect. Description of the Drawings

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention, and therefore should not be regarded as limiting the scope. For those of ordinary skill in the art, without creative efforts, other related drawings can also be obtained based on these drawings.

[0031] Figure 1 It is a schematic structural diagram of the source bottle device provided by the embodiment of the present invention;

[0032] Figure 2 It is a schematic structural diagram of the heating element in the source bottle device provided by the embodiment of the present invention;

[0033] Figure 3 It is a cross-sectional view of the heating element in the source bottle device provided by the embodiment of the present invention;

[0034] Figure 4 It is a schematic structural diagram of the intake pipe in the source bottle device provided by the embodiment of the present invention.

[0035] Icons: 100 - Source bottle device; 110 - Source bottle; 111 - Gas outlet; 112 - Filling port; 120 - Heating jacket; 130 - Heating element; 131 - Electric heating pipeline; 132 - Connection end; 133 - Positive terminal; 134 - Negative terminal; 135 - First connection section; 136 - Heating section; 137 - Second connection section; 138 - Third connection section; 139 - Cooling pipeline; 140 - Inlet pipe; 141 - Air hole. Detailed implementation manners

[0036] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some but not all of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and illustrated herein can be arranged and designed in various different configurations.

[0037] Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0038] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0039] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "inner", "outer", "upper", "lower", "horizontal", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the present invention is usually placed during use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be understood as indicating or implying relative importance.

[0040] In the description of the present invention, it should also be noted that unless otherwise clearly defined and limited, the terms "set", "connected", "installed", "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0041] The following will describe in detail some embodiments of the present invention in conjunction with the accompanying drawings. Without conflict, the features in the following embodiments can be combined with each other.

[0042] Please refer to Figures 1 to 4 , an embodiment of the present invention provides a semiconductor deposition apparatus (not shown in the figure) for depositing on a substrate. The source bottle device 100 therein can achieve two sublimations of the solid organic metal source to improve the stability of the output air pressure, improve the purity of the output gas, and ensure the stability of the deposition process and the deposition effect.

[0043] The semiconductor deposition apparatus includes a source bottle device 100 and a deposition device (not shown in the figure). The source bottle device 100 is connected to the deposition device. The source bottle device 100 is used to supply process gas (mainly including gaseous organic metal source) to the deposition device, and the deposition device is used to deposit the process gas on the substrate to achieve the deposition function of the substrate.

[0044] The source bottle device 100 includes a source bottle 110, a heating jacket 120, and a heating element 130. The heating jacket 120 is sleeved outside the source bottle 110, and the heating jacket 120 is used to directly heat the source bottle 110. The heating element 130 is installed inside the source bottle 110, and the heating element 130 is used to heat the internal cavity of the source bottle 110. The source bottle 110 is provided with an air outlet 111 and a filling port 112. Among them, the air outlet 111 is used for the gas in the source bottle 110 to output outward, and the filling port 112 is used for loading the solid organic metal source into the source bottle 110. Specifically, the heating jacket 120 is used to heat the source bottle 110 so that the solid organic metal source loaded into the source bottle 110 through the filling port 112 sublimates for the first time, and drives the impurities evaporated or sublimated therein to be discharged through the air outlet 111. The heating element 130 is used for the gaseous organic metal source formed by the first sublimation to sublime, and the heating element 130 is also used to heat the solid organic metal source condensed on its surface so that the solid organic metal source sublimes again and is output outward through the air outlet 111. In this way, on the one hand, the heating element 130 has a fixed surface area. After the solid organic metal source condenses and covers the surface of the heating element 130, its surface area is also fixed and stable, thereby ensuring the stability of the sublimation rate of the solid organic metal source during the second sublimation and ensuring the stability of the output air pressure. On the other hand, since the impurities in the solid organic metal source will be carried out and discharged during the first sublimation process to ensure the purity of the solid organic metal source after sublimation, thereby improving the stability of the sublimation rate and the output air pressure during the second sublimation process. Therefore, the source bottle device 100 can achieve two sublimations of the solid organic metal source to improve the stability of the output air pressure, improve the purity of the output gas, and ensure the stability of the deposition process and the deposition effect.

[0045] In this embodiment, the organometallic source is TMI (trimethylindium), but it is not limited thereto. In other embodiments, the organometallic source may also be other materials, and the material of the organometallic source is not specifically limited.

[0046] The heating element 130 includes an electric heating pipeline 131 and a connection end 132. The connection end 132 is installed on the source bottle 110, the electric heating pipeline 131 is arranged inside the source bottle 110, one end of the electric heating pipeline 131 is connected to the positive terminal 133 of the connection end 132, and the other end is connected to the negative terminal 134 of the connection end 132 to energize the electric heating pipeline 131. Specifically, after the electric heating pipeline 131 is energized, the resistance inside it will do work and generate heat to transfer the heat to the internal cavity of the source bottle 110, so that the internal cavity of the source bottle 110 is heated and insulated or heated up, thereby preventing the organometallic source from sublimating during the primary sublimation process and realizing the heating and sublimation of the organometallic source sublimated on the surface of the heating element 130.

[0047] It can be understood that the heating principle of the heating sleeve 120 is the same as that of the electric heating pipeline 131. After the heating sleeve 120 is energized, the resistance inside it will do work and generate heat to directly transfer the heat to the source bottle 110, so that the source bottle 110 is heated up.

[0048] The electric heating pipeline 131 includes a first connection section 135, a heating section 136, and a second connection section 137 connected in sequence. The heating section 136 is connected between the first connection section 135 and the second connection section 137. The first connection section 135 is connected to the positive terminal 133, and the second connection section 137 is connected to the negative terminal 134 to energize the heating section 136. Specifically, the heating section 136 is arranged in a meandering shape or other shapes to increase its contact area with the gaseous organometallic source, facilitate the sublimation of more gaseous organometallic sources on the surface of the heating section 136, improve the sublimation adhesion amount, thereby improving the secondary sublimation rate, and ensuring the stability of the sublimation rate.

[0049] Preferably, the number of the heating sections 136 is multiple, and the multiple heating sections 136 are arranged in parallel at intervals along the height direction of the source bottle 110. Adjacent two heating sections 136 are connected by a third connection section 138 to realize the simultaneous energization of the multiple heating sections 136. Specifically, the multiple heating sections 136 act together to further improve the sublimation adhesion amount, improve the secondary sublimation rate, and are stable and reliable.

[0050] In this embodiment, the number of heating sections 136 is three, and the number of third connection sections 138 is two. The three heating sections 136 are arranged in sequence from top to bottom, and two adjacent heating sections 136 are connected by one third connection section 138. However, this is not limited thereto. In other embodiments, the number of heating sections 136 can be four, and at this time the number of third connection sections 138 is three; the number of heating sections 136 can be two, and at this time the number of third connection sections 138 is one; the numbers of the heating sections 136 and the third connection sections 138 are not specifically limited.

[0051] In this embodiment, the heating section 136 is arranged in a spiral shape (similar to the shape of mosquito coils), and the plane where the heating section 136 is located is parallel to the bottom wall of the source bottle 110, so as to further increase the contact area between the heating section 136 and the gaseous organometallic source, improve the sublimation adhesion amount, thereby improving the secondary sublimation rate, and being able to ensure the stability of the sublimation rate.

[0052] Preferably, the heating element 130 further includes a cooling pipeline 139. The cooling pipeline 139 is arranged in the electric heating pipeline 131. The cooling pipeline 139 is made of a high-temperature resistant insulating material and has good thermal conductivity. The cooling pipeline 139 is used for supplying cooling water to pass through to cool the electric heating pipeline 131, so as to quickly adjust the temperature of the electric heating pipeline 131, facilitate the sublimation of the gaseous organometallic source, and improve the sublimation rate.

[0053] Preferably, the source bottle device 100 further includes an intake pipe 140. The intake pipe 140 extends into the source bottle 110. The intake pipe 140 is provided with air holes 141. The air holes 141 are arranged at the bottom of the source bottle 110 and are located below the heating element 130. The air holes 141 are used for the inert gas introduced into the intake pipe 140 to flow out. The inert gas can drive the gas in the source bottle 110 to be output outward from the air outlet 111, so as to discharge the impurity gas and output the process gas, that is, the process gas input into the deposition device includes the gaseous organometallic source and the inert gas.

[0054] In this embodiment, the number of the air holes 141 is multiple. The multiple air holes 141 are arranged in parallel at intervals and all face upward to improve the stability of the inert gas introduction. The inert gas is helium. However, this is not limited thereto. In other embodiments, the multiple air holes 141 can be arranged in a staggered manner, the air holes 141 can face downward or to both sides, and the inert gas can be argon or neon. The distribution mode of the multiple air holes 141 and the type of the inert gas are not specifically limited.

[0055] An embodiment of the present invention provides a method for using a source bottle device, which is applied to the above-mentioned source bottle device 100. The method for using the source bottle device includes:

[0056] Step S1: Load the solid organometallic source into the source bottle 110 through the filling port 112.

[0057] It should be noted that in step S1, the solid organic metal source is loaded into the source bottle 110 through the filling port 112 manually or by using a robotic arm. After that, the filling port 112 is sealed to prevent gas from flowing out of the filling port 112.

[0058] Step S2: Heat the heating jacket 120 to a first preset temperature and heat the heating element 130 to a second preset temperature to cause the initial sublimation of the solid organic metal source and drive the impurities evaporated or sublimated therein to be discharged through the air outlet 111.

[0059] It should be noted that the first preset temperature is the source temperature. At this temperature, the sublimation rate of the solid organic metal source is relatively large, which can meet the process requirements of the deposition device. In step S2, the heating jacket 120 and the heating element 130 are heated simultaneously. Among them, the heating temperature of the heating jacket 120 reaches the source temperature, which can realize the initial sublimation of the solid organic metal source in the source bottle device 100. During this process, the impurities in the solid organic metal source are evaporated synchronously. Since the density of the impurity gas is relatively small (such as ethane, etc., whose density is less than that of gaseous trimethylindium), it will float above the gaseous organic metal source and be discharged outward through the air outlet 111 (at this time, the air outlet 111 is not connected to the deposition device, and the deposition device has not started the deposition process). At the same time, inevitably, a small amount of gaseous organic metal source will be discharged outward along with the impurity gas, but its amount is small and can be ignored, and it will not cause great waste. In addition, generally, the impurities will be evaporated or sublimated when the source bottle device 100 is used for the first time. When the source bottle device 100 is used for a period of time, basically no impurities will come out. At the same time, by heating the heating element 130, the sublimated gaseous organic metal source can be prevented from condensing on the surface of the heating element 130.

[0060] Furthermore, the second preset temperature is greater than the first preset temperature, that is, the heating temperature of the heating element 130 is higher than the heating temperature of the heating jacket 120. Since the temperature of the heating element 130 is relatively high, it can not only improve the effect of sublimating the solid organic metal source into a gaseous organic metal source, but also further ensure that the gaseous organic metal source formed by sublimation will not condense on the surface of the heating element 130.

[0061] Furthermore, in step S2, an inert gas is introduced into the source bottle 110 through the inlet pipe 140 to pressurize the inside of the source bottle 110 and drive the gas inside the source bottle 110 to be quickly discharged outward. During this process, mainly the impurity gas with a relatively small density is discharged, and an extremely small part of the gaseous organic metal source is inevitably discharged, improving the impurity discharge efficiency.

[0062] Step S3: Maintain the heating jacket 120 at the first preset temperature and cool down the heating element 130, so that the gaseous organometallic source formed by primary sublimation condenses on the surface of the heating element 130.

[0063] It should be noted that in step S3, after the impurity discharge is completed, the heating jacket 120 is maintained at the first preset temperature, and the heating element 130 is cooled down, so that the gaseous organometallic source formed by primary sublimation condenses on the surface of the heating element 130. Specifically, the heating element 130 includes an electric heating pipeline 131 and a cooling pipeline 139. The cooling pipeline 139 is arranged inside the electric heating pipeline 131. Among them, the electric heating pipeline 131 is used to generate heat by electrifying and doing work to realize the heating function of the heating element 130, and the cooling pipeline 139 is used to supply cooling water to realize the rapid cooling of the electric heating pipeline 131, so as to realize the cooling function of the heating element 130. In step S3, the steps of cooling down the heating element 130 include: pausing the electric heating pipeline 131; and / or, introducing cooling water into the cooling pipeline 139; both of these two methods can achieve the effect of cooling down the heating element 130.

[0064] In this embodiment, in step S3, cooling water (the main cooling method) is introduced into the cooling pipeline 139 to perform water cooling on the electric heating pipeline 131, realizing the rapid cooling of the electric heating pipeline 131, so that the gaseous organometallic source can quickly condense on the surface of the electric heating pipeline 131, improving the condensation rate; at the same time, the electric heating pipeline 131 is paused (the secondary cooling method) to cut off the power supply of the electric heating pipeline 131, avoiding the electric heating pipeline 131 from continuing to do work and generate heat, and enabling the electric heating pipeline 131 to cool down by natural heat dissipation.

[0065] Step S4: Cool down the heating jacket 120 to a temperature lower than the first preset temperature, and heat the heating element 130 to the first preset temperature, so that the solid organometallic source condensed on the surface of the heating element 130 sublimes again and is output outward through the air outlet 111.

[0066] It should be noted that in step S4, after the condensation of the gaseous organometallic source is completed, the supply of cooling water to the cooling pipeline 139 is stopped, and the heating element 130 is started, so that the electric heating pipeline 131 is electrified and heated to the first preset temperature. At the same time, the temperature of the heating jacket 120 is reduced, so that the temperature of the heating jacket 120 is slightly lower than the temperature of the heating element 130 (the first preset temperature), so that the solid organometallic source condensed on the surface of the heating element 130 sublimes again (the temperature of the heating jacket 120 being slightly lower than the temperature of the heating element 130 can ensure that the solid organometallic source sublimated on the heating element 130 does not condense quickly), and is output outward through the air outlet 111 (at this time, the air outlet 111 is connected to the deposition device, and the deposition device starts the deposition process).

[0067] Further, in step S4, an inert gas is introduced into the source bottle 110 through the intake pipe 140 to pressurize the inside of the source bottle 110, driving the re-sublimated gaseous organometallic source to be quickly output to the deposition device to meet the process requirements of the deposition device.

[0068] Preferably, after step S4, if there is still solid organometallic source remaining on the inner wall of the source bottle 110, first cool down the heating element 130 and heat the heating sleeve 120 to a first preset temperature to sublime the solid organometallic source remaining on the inner wall of the source bottle 110 and condense it on the surface of the heating element 130; then repeat step S4; repeat this cycle until the solid organometallic source in the source bottle 110 is exhausted.

[0069] Correspondingly, after step S4, if there is no longer solid organometallic source remaining on the inner wall of the source bottle 110, it means that the solid organometallic source in the source bottle 110 is exhausted. At this time, if process gas still needs to be supplied to the deposition device, repeat steps S1 to S4.

[0070] In the source bottle device 100 provided by the embodiment of the present invention, the heating sleeve 120 is sleeved outside the source bottle 110, the heating element 130 is installed inside the source bottle 110, the source bottle 110 is provided with an air outlet 111 and a filling port 112. The heating sleeve 120 is used to heat the source bottle 110 to sublime the solid organometallic source filled into the source bottle 110 through the filling port 112 for the first time, and drive the impurities evaporated or sublimated therein to be discharged through the air outlet 111. The heating element 130 is used for the gaseous organometallic source formed by the first sublimation to condense. The heating element 130 is also used to heat the solid organometallic source condensed on its surface to sublime the solid organometallic source again and output it outward through the air outlet 111. Compared with the prior art, the source bottle device 100 provided by the present invention can achieve two sublimations of the solid organometallic source by using the heating sleeve 120 sleeved outside the source bottle 110 and the heating element 130 installed inside the source bottle 110, so as to improve the stability of the output air pressure, improve the purity of the output gas, and ensure the stability and deposition effect of the deposition process. The method steps of using the source bottle device are simple, flexible and practical. The semiconductor deposition equipment has high deposition efficiency and good deposition effect.

[0071] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A source bottle device, characterized in that: It includes a source bottle, a heating sleeve and a heating element, wherein the heating sleeve is arranged outside the source bottle, and the heating element is installed inside the source bottle. The source bottle is provided with an air outlet and a filling port, and the heating sleeve is used to heat the source bottle so that the solid organic metal source loaded into the source bottle through the filling port is initially sublimated, and drives the impurities evaporated or sublimated therein to be discharged through the air outlet, and the heating element is used to condense the gaseous organic metal source formed by the initial sublimation, and the heating element is also used to heat the solid organic metal source condensed on its surface so that the solid organic metal source is sublimated again and output to the outside through the air outlet.

2. The source bottle device according to claim 1, characterized in that: The heating element includes an electric heating pipeline and a connecting end, the connecting end is installed on the source bottle, the electric heating pipeline is arranged in the source bottle, one end of the electric heating pipeline is connected to the positive end of the connecting end, and the other end is connected to the negative end of the connecting end.

3. The source bottle device according to claim 2, characterized in that: The electric heating pipeline includes a first connecting section, a heating section, and a second connecting section which are connected in sequence, the first connecting section is connected to the positive terminal, the second connecting section is connected to the negative terminal, and the heating section is arranged in a serpentine shape.

4. The source bottle device according to claim 3, characterized in that: There are multiple heating sections, which are arranged in parallel and spaced apart along the height direction of the source bottle, and two adjacent heating sections are connected by a third connecting section.

5. The source bottle device according to claim 3, characterized in that: The heating section is arranged in a spiral shape, and the plane where the heating section is located is parallel to the bottom wall of the source bottle.

6. The source bottle device according to claim 2, characterized in that: The heating element further comprises a cooling pipeline, wherein the cooling pipeline is arranged in the electric heating pipeline, and the cooling pipeline is used for cooling water to pass through so as to cool the electric heating pipeline.

7. The source bottle device according to any one of claims 1 to 6, characterized in that: The source bottle device also includes an air inlet pipe, which extends into the source bottle. The air inlet pipe is provided with an air hole, which is arranged at the bottom of the source bottle and below the heating element. The air hole is used to allow the inert gas entering the air inlet pipe to flow out.

8. A method for using a source bottle device, characterized in that: Applied to the source bottle device according to any one of claims 1 to 7, the method for using the source bottle device comprises: S1: filling a solid organic metal source into the source bottle through the filling port; S2: heating the heating jacket to a first preset temperature and heating the heating element to a second preset temperature, so as to allow the solid organic metal source to undergo initial sublimation and drive the evaporated or sublimated impurities therein to be discharged through the gas outlet; S3: maintaining the heating jacket at the first preset temperature and cooling the heating element so that the gaseous organic metal source formed by the initial sublimation condenses on the surface of the heating element; S4: cooling the heating jacket to a temperature lower than the first preset temperature, and heating the heating element to the first preset temperature, so that the solid organic metal source condensed on the surface of the heating element is sublimated again and output to the outside through the gas outlet.

9. The method for using the source bottle device according to claim 8, characterized in that: In S2, the second preset temperature is greater than the first preset temperature.

10. The method for using the source bottle device according to claim 8, characterized in that: In S2 and S4, an inert gas is introduced into the source bottle through the gas inlet pipe.

11. The method for using the source bottle device according to claim 8, characterized in that: The heating element comprises an electric heating pipeline and a cooling pipeline, and the cooling pipeline is arranged in the electric heating pipeline; In S3, the step of cooling the heating element includes: pausing the electric heating pipeline; and / or introducing cooling water into the cooling pipeline.

12. The method for using the source bottle device according to claim 8, characterized in that: After S4, the method for using the source bottle device further includes: If there is still solid organic metal source remaining on the inner wall of the source bottle, the heating element is cooled down and the heating jacket is heated to the first preset temperature to sublime the solid organic metal source remaining on the inner wall of the source bottle and condense on the surface of the heating element.

13. A semiconductor deposition device, characterized in that: Comprising the source bottle device as described in any one of claims 1-7.

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