Gas spraying and recycling structure and photovoltaic coating equipment applying same

Abstract

The invention provides a gas spraying and recycling structure and photovoltaic coating equipment applying the gas spraying and recycling structure. The gas spraying and recycling structure comprises at least one layer of gas uniformizing plate, and the gas uniformizing plate is provided with multiple groups of alternately arranged lower-layer gas inlet holes and lower-layer waste gas holes; the gas inlet annular plate is arranged on the circumferential side of the gas uniformizing plate in a surrounding mode and provided with at least one circle of annular gas inlet channel; the gas inlet base plate is arranged above the gas uniformizing plate on the uppermost layer, and a plurality of groups of middle-layer gas inlet holes and middle-layer waste gas holes are formed in the gas inlet base plate and are communicated with the lower-layer gas inlet holes and the lower-layer waste gas holes respectively; the gas guide plate is arranged above the gas inlet base plate and is provided with a plurality of groups of upper-layer waste gas holes communicated with the middle-layer waste gas holes; a plurality of upper-layer air guide grooves which are communicated with the annular air inlet channel and the lower middle-layer air inlet holes and are alternately arranged are formed in the bottom surface of the air guide plate; the top surface of the gas guide plate is provided with a plurality of waste gas exhaust channels communicated with the upper-layer waste gas holes; and the air inlet device is communicated with the annular air inlet channel. And when the lower turntable device rotates, the upward to-be-coated end surfaces of the half silicon wafers borne by the turntable device can uniformly sweep over the special gas areas and the isolated gas areas formed by spraying.

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic cell coating equipment, and in particular to a gas spraying and recovery structure and photovoltaic coating equipment using the same. Background Art

[0002] With the continuous development of the current photovoltaic industry and the increasing demand for photovoltaic cell production capacity, the half-wafer encapsulated batteries currently on the market can greatly increase production capacity. This type of half-wafer encapsulated battery requires passivation coating on the cross section of the half-wafer after slicing. However, among the existing spatial ALD (Atomic layer deposition) coating equipment, the plate-type ALD equipment that can achieve mass production is usually a plate-type ALD equipment. This type of plate-type ALD coating equipment can only cover the entire silicon wafer, and cannot only passivate the cross section of the half-wafer after slicing. In addition, the entire silicon wafer occupies a large space during coating, and the output depends on the length and width of the equipment reaction chamber. In summary, the existing coating equipment cannot uniformly passivate and coat only the cross section of the half-wafer in large quantities, so its passivation treatment efficiency for half-wafers is low.

[0003] Therefore, how to provide a spray structure that can achieve targeted and uniform passivation coating on the cross-section of half-silicon wafers in batches and improve the passivation coating processing efficiency of half-silicon wafers is a technical problem that needs to be solved urgently in this field. Summary of the invention

[0004] The present invention provides a gas spraying and recovery structure and photovoltaic coating equipment using the same, so as to solve the technical problems that the existing space-type ALD coating equipment cannot realize targeted and uniform passivation coating on the cross section of half silicon wafers in batches and the passivation coating processing efficiency of half silicon wafers is low.

[0005] To solve the above problems, the technical solution adopted by the present invention is:

[0006] The present invention provides a gas spraying and recovery structure, comprising:

[0007] At least one layer of air-distributing plate, each layer of air-distributing plate is provided with a plurality of groups of lower air inlet holes and lower air exhaust holes opened along its radial direction, and each group of lower air inlet holes and lower air exhaust holes is alternately arranged;

[0008] An air inlet ring plate is arranged around the air uniforming plate and is provided with at least one annular air inlet passage arranged along its circumference;

[0009] An air intake substrate is arranged above the uppermost air homogenizing plate, on which a plurality of groups of middle-layer air intake holes and middle-layer exhaust holes are arranged along its radial direction, and the middle-layer air intake holes and the middle-layer exhaust holes are matched and connected to the corresponding lower-layer air intake holes and lower-layer exhaust holes respectively;

[0010] The air guide plate is arranged above the intake substrate, and multiple groups of upper exhaust holes are arranged thereon, which are radially opened and match and communicate with the corresponding middle-layer exhaust holes; on the bottom surface of the air guide plate facing the intake substrate, multiple upper air guide grooves are arranged radially, which match and communicate with the corresponding annular intake channels and the lower middle-layer intake holes below, and each upper air guide groove is alternately arranged with the upper exhaust holes;

[0011] On the top surface of the air guide plate facing away from the intake substrate, multiple exhaust gas channels are arranged radially, which match and communicate with the corresponding upper exhaust holes;

[0012] The intake device is connected to the annular intake channel.

[0013] Preferably, the top surface of the intake ring plate facing the intake substrate is closely attached to the bottom surface of the peripheral edge of the intake substrate facing the intake ring plate. Multiple ventilation holes are provided on the peripheral edge of the intake substrate, and the ventilation holes communicate with the corresponding annular intake channels and the upper air guide grooves.

[0014] Preferably, the bottom surface of the air guide plate is closely attached to the top surface of the intake substrate facing the air guide plate, so that the upper air guide groove and the top surface of the intake substrate enclose an upper air guide cavity communicating between the corresponding annular intake channel and the lower middle-layer intake hole;

[0015] On the bottom surface of the intake substrate facing the air equalizing plate, multiple middle-layer air guide grooves are arranged radially, which match and communicate with the corresponding middle-layer intake holes and the lower-layer intake holes below, and each middle-layer air guide groove is alternately arranged with the middle-layer exhaust holes;

[0016] The bottom surface of the intake substrate is closely attached to the top surface of the topmost air equalizing plate facing the intake substrate, so that the middle-layer air guide groove and the top surface of the topmost air equalizing plate enclose a middle-layer air guide cavity communicating between the corresponding middle-layer intake hole and the lower-layer intake hole.

[0017] Preferably, the annular intake channel includes:

[0018] The first ring channel, the second ring channel and the third ring channel are respectively arranged in the intake replacement plate along the circumferential direction of the intake ring plate and are adjacent to each other at intervals in sequence;

[0019] The upper air guide grooves include:

[0020] Multiple first air guide grooves are evenly spaced and distributed on the bottom surface of the air guide plate, and respectively match and communicate with the corresponding segments of the first ring channel;

[0021] Multiple second air guide grooves are evenly spaced and distributed on the bottom surface of the air guide plate. Each second air guide groove is alternately arranged with the first air guide groove and respectively matches and communicates with the corresponding segments of the second ring channel;

[0022] Multiple third air guide grooves are evenly spaced and distributed on the bottom surface of the air guide plate, are respectively located between the adjacent first air guide grooves and the second air guide grooves, and respectively match and communicate with the corresponding segments of the third ring channel;

[0023] The middle-layer air inlets include:

[0024] A plurality of first middle-layer holes, second middle-layer holes and third middle-layer holes, which are evenly spaced and distributed on the air inlet substrate, and respectively match and communicate with the corresponding first air guide grooves, second air guide grooves and third air guide grooves;

[0025] The lower-layer air inlets include:

[0026] A plurality of first lower-layer holes, second lower-layer holes and third lower-layer holes, which are evenly spaced and distributed on the corresponding air distribution plates, and respectively match and communicate with the corresponding first middle-layer holes, second middle-layer holes and third middle-layer holes;

[0027] Each upper-layer exhaust gas hole is respectively arranged between adjacent first air guide grooves and third air guide grooves, adjacent third air guide grooves and second air guide grooves, and adjacent second air guide grooves and first air guide grooves;

[0028] Each middle-layer exhaust gas hole is respectively arranged between adjacent first middle-layer holes and third middle-layer holes, adjacent third middle-layer holes and second middle-layer holes, and adjacent second middle-layer holes and first middle-layer holes;

[0029] Each lower-layer exhaust gas hole is respectively arranged between adjacent first lower-layer holes and third lower-layer holes, adjacent third lower-layer holes and second lower-layer holes, and adjacent second lower-layer holes and first lower-layer holes.

[0030] Preferably, the air distribution plate includes:

[0031] A spray bottom plate, which is arranged below the air inlet substrate;

[0032] An air distribution upper plate, which is arranged between the air inlet substrate and the spray bottom plate;

[0033] The multiple groups of the first lower-layer holes include:

[0034] Multiple groups of first air distribution through holes and first spray air holes;

[0035] The multiple groups of the second lower-layer holes include:

[0036] Multiple groups of second air distribution through holes and second spray air holes;

[0037] The multiple groups of the third lower-layer holes include:

[0038] Multiple groups of third air distribution through holes and third spray air holes;

[0039] Multiple groups of first air distribution through holes, second air distribution through holes and third air distribution through holes are radially spaced and distributed on the air distribution upper plate, and respectively match and communicate with the corresponding first middle-layer holes, second middle-layer holes and third middle-layer holes;

[0040] Multiple groups of first spray air holes, second spray air holes, and third spray air holes are radially spaced apart on the spray bottom plate and are respectively connected to corresponding first air distribution through holes, second air distribution through holes, and third air distribution through holes in a matching manner;

[0041] Each lower layer exhaust gas hole of the spray bottom plate is respectively disposed between adjacent first spray air holes and third spray air holes, third spray air holes and second spray air holes, and second spray air holes and first spray air holes;

[0042] Each lower layer exhaust gas hole of the air distribution upper plate is respectively disposed between adjacent first air distribution through holes and third air distribution through holes, third air distribution through holes and second air distribution through holes, and second air distribution through holes and first air distribution through holes.

[0043] Preferably, a plurality of lower layer air guiding grooves are arranged on the bottom surface of the air distribution upper plate facing the spray bottom plate along its radial direction, and are respectively connected to each first air distribution through hole, second air distribution through hole, and third air distribution through hole and the corresponding first spray air hole, second spray air hole, and third spray air hole below in a matching manner, and each lower layer air guiding groove is alternately arranged with the lower layer exhaust gas hole of the air distribution upper plate;

[0044] The bottom surface of the air distribution upper plate is closely attached to the top surface of the spray bottom plate facing the air distribution upper plate, so that the lower layer air guiding grooves and the top surface of the spray bottom plate enclose a lower layer air guiding cavity communicating between each first air distribution through hole, second air distribution through hole, and third air distribution through hole and the corresponding first spray air hole, second spray air hole, and third spray air hole below.

[0045] Preferably, the air inlet device includes:

[0046] A first air inlet pipeline, a second air inlet pipeline, and a third air inlet pipeline, which are respectively used to input a first reaction gas, a second reaction gas, and an isolation gas into the first annular channel, the second annular channel, and the third annular channel.

[0047] Furthermore, a plurality of middle layer mounting holes are evenly distributed on the air inlet substrate along its radial direction, and a plurality of lower layer mounting holes are evenly distributed on the air distribution plate along its radial direction;

[0048] The gas spraying and recovery structure further includes:

[0049] A plurality of middle layer inserts, which are detachably inserted into each middle layer mounting hole respectively;

[0050] A plurality of lower layer inserts, which are detachably inserted into each lower layer mounting hole respectively;

[0051] Each group of middle layer air inlet holes is evenly spaced along the radial direction of the air inlet substrate on the middle layer insert, and each group of lower layer air inlet holes is evenly spaced along the radial direction of the corresponding air distribution plate on the lower layer insert.

[0052] Preferably, the air - equalizing plate, the intake air substrate, and the air - guiding plate are all circular - ring plates with openings in the middle. The intake air ring plate surrounds and is disposed on the circumferential side of the air - equalizing plate along the circumferential direction of the air - equalizing plate.

[0053] Furthermore, the gas spraying and recovery structure further includes:

[0054] A plurality of waste gas partition ribs, which are arranged radially along the air - guiding plate and are spaced apart on the top surface of the air - guiding plate;

[0055] A waste gas cover plate, which has an opening in the middle and is circular - ring - shaped, and is covered and installed above each waste gas partition rib;

[0056] An isolation ring plate, which is annularly arranged on the top surface of the air - guiding plate along the circumferential direction of the air - guiding plate. The outer circumferential side of the isolation ring plate abuts against one end of each waste gas partition rib facing the opening of the air - guiding plate and the inner circumferential side of the waste gas cover plate;

[0057] Between the waste gas cover plate and the adjacent waste gas partition ribs, the isolation ring plate, and the air - guiding plate, each exhaust gas channel is formed, and the adjacent exhaust gas channels are isolated from each other.

[0058] The present invention also provides a photovoltaic coating device, which includes a reaction cavity that can be evacuated, and further includes a turntable device disposed at the bottom of the inner cavity of the reaction cavity, a driving device for driving the turntable device to rotate, the above - mentioned gas spraying and recovery structure disposed in the inner cavity and above the turntable device, and a waste gas ring channel disposed in the inner cavity and surrounding the circumferential side of the air - guiding plate and respectively corresponding to and communicating with each exhaust gas channel;

[0059] The turntable device is used to carry a plurality of material carriers. A plurality of target substrates are placed in the material carriers, and the end face of the target substrate to be coated faces upward towards the gas spraying and recovery structure;

[0060] When the turntable device rotates, the gas input by the intake device sequentially passes through the corresponding annular intake channel, the upper - layer air - guiding groove, the middle - layer intake hole, and the lower - layer intake hole, is transported and sprayed onto the end face to be coated of the target substrate in the corresponding material carrier that rotates below the bottom - most air - equalizing plate, and the waste gas is discharged from the reaction cavity through the corresponding adjacent lower - layer waste gas holes, middle - layer waste gas holes, upper - layer waste gas holes, exhaust gas channels, and waste gas ring channels in sequence.

[0061] Furthermore, the photovoltaic coating device further includes:

[0062] An adjusting structure for adjusting the installation height of the gas spraying and recovery structure in the inner cavity to adjust the distance between the bottom - most air - equalizing plate and the end face to be coated.

[0063] Preferably, the photovoltaic coating device is an ALD coating device, the target substrate is a half - piece substrate after slicing a whole - piece substrate, and the end face to be coated is the sliced cross - section of the half - piece substrate.

[0064] Compared with the prior art, the present invention has the following beneficial effects:

[0065] For the gas spraying and recovery structure provided by the present invention, when the lower turntable device rotates, the target substrate (half silicon wafer) accommodated in the material carrier it carries faces the end face to be coated upward, and can evenly sweep through each special gas area and isolation gas area formed by the spraying of the gas spraying and recovery structure, enabling batch realization of targeted and uniform passivation coating on the cross-section of the half silicon wafer, saving the accommodation space of the half silicon wafer in the reaction chamber, and thus greatly improving the passivation coating processing efficiency of the photovoltaic coating equipment for the half silicon wafer.

[0066] Independent and alternately arranged intake channels and exhaust gas recovery channels are adopted for different reaction gases and isolation gases. Exhaust gas recovery channels are arranged on both sides of the lower intake holes of the lowest-layer gas distribution plate (spraying plate) corresponding to the lower reaction chamber into which each reaction gas is sprayed. The opposite sides of a pair of exhaust gas recovery channels are respectively the lower intake holes of a pair of isolation gases. This enables the first reaction gas (gaseous TMA) and the second reaction gas (water vapor) to be independently sprayed and recovered, and their intake channels do not interfere with each other to avoid contact and mixing reactions, and their intake gas flow rates can be independently regulated; the used reaction gases and isolation gases can be promptly recovered by the exhaust gas recovery channels on both sides, and protected by the spraying action of the isolation gas near the lower intake holes of the isolation gas in the exhaust gas recovery channels, preventing the exhaust gas from escaping into other special gas areas in the reaction chamber and affecting the process reaction.

[0067] The gas spraying and recovery structure is compactly arranged in the height direction, so that enough installation space for the top surface heater assembly can be reserved at the top of the reaction chamber corresponding to the upper part of the gas spraying and recovery structure. The top surface heater assembly is in direct contact with the top surface of the gas spraying and recovery structure to achieve heat conduction of the process gas flowing through it, improving the gas heating efficiency and meeting the process requirements for the gas temperature inside the inner cavity.

[0068] An adjustment structure is provided to adjust the installation height of the gas spraying and recovery structure in the reaction chamber, so as to adjust the distance between the lowest-layer gas distribution plate and the end face to be coated below, and achieve the adjustment of the spraying process effect. Description of the Drawings

[0069] In order to more clearly illustrate the technical solutions proposed by the present invention, the present invention will be described in detail below in conjunction with embodiments and drawings. It should be understood that the embodiments and drawings in the following specific implementation manners and the description of the drawings of the specification are only some embodiments of the present invention, and those skilled in the art can make changes to these drawings under the concept of the present invention.

[0070] Figure 1 It is a schematic three-dimensional structure diagram of an embodiment of the gas spraying and recovery structure provided by the present invention;

[0071] Figure 2 The front view structural schematic diagram of the embodiment of the gas spraying and recovery structure provided by the present invention;

[0072] Figure 3 The top view structural schematic diagram of the embodiment of the gas spraying and recovery structure provided by the present invention;

[0073] Figure 4 The bottom view structural schematic diagram of the embodiment of the gas spraying and recovery structure provided by the present invention;

[0074] Figure 5 is Figure 4 The partial sectional structural schematic diagram of the gas spraying and recovery structure in

[0075] Figure 6 The exploded structural schematic diagram of the embodiment of the gas spraying and recovery structure provided by the present invention;

[0076] Figure 7 is Figure 4 The partial enlarged structural schematic diagram of the G area of the gas spraying and recovery structure in

[0077] Figure 8 is Figure 6 The partial enlarged structural schematic diagram of the uniform gas upper plate corresponding to the view angle and the G area in Figure 7 in

[0078] Figure 9 The partial sectional structural schematic diagram of the embodiment of the gas spraying and recovery structure of the present invention;

[0079] Figure 10 The sectional structural schematic diagram of the embodiment of the photovoltaic coating equipment provided by the present invention.

[0080] Among them, the main reference signs of each drawing in the figure are as follows:

[0081] 1. Air distribution plate; 11. Spraying bottom plate; 111. Spraying air outlet groove; 12. Upper air distribution plate; 121. Lower layer air guiding groove; 13. Lower layer air inlet hole; 131. First lower layer hole; 1311. First air distribution through hole; 1312. First spraying air hole; 132. Second lower layer hole; 1321. Second air distribution through hole; 1322. Second spraying air hole; 133. Third lower layer hole; 1331. Third air distribution through hole; 1332. Third spraying air hole; 14. Lower layer waste gas hole; 15. Lower layer insert strip; 2. Air inlet ring plate; 21. Annular air inlet channel; 211. First ring channel; 212. Second ring channel; 213. Third ring channel; 3. Air inlet base plate; 31. Middle layer air inlet hole; 311. First middle layer hole; 312. Second middle layer hole; 313. Third middle layer hole; 32. Middle layer waste gas hole; 33. Ventilation hole; 34. Middle layer air guiding groove; 35. Middle layer insert strip; 4. Air guiding plate; 41. Upper layer waste gas hole; 43. Upper layer air guiding groove; 431. First air guiding groove; 432. Second air guiding groove; 433. Third air guiding groove; 5. Exhaust gas channel; 6. Air inlet device; 61. First air inlet pipeline; 62. Second air inlet pipeline; 63. Third air inlet pipeline; 7. Exhaust gas partition rib; 8. Exhaust gas cover plate; 9. Isolation ring plate; 10. Photovoltaic coating equipment; 101. Reaction cavity; 1011. Cavity seat; 1012. Top cover; 102. Inner cavity; 103. Turntable device; 104. Driving device; 105. Exhaust gas ring channel; 106. Material carrier; 107. Target substrate; 108. End face to be coated; 109. Adjusting structure; 1091. Support column.

[0082] Among them, other marks in the figure are as follows:

[0083] A. Upper layer air guiding cavity; B. Middle layer air guiding cavity; C. Lower layer air guiding cavity; D. Opening; E. Connection structure; F. Sector notch. Detailed implementation manners

[0084] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below with reference to the accompanying Figures 1 - 10 drawings and embodiments.

[0085] Please refer to Figures 1 - 9 together, the gas spraying and recovery structure provided by the present invention includes:

[0086] At least one layer of air distribution plate 1, on each layer of air distribution plate 1, multiple groups of lower layer air inlet holes 13 and lower layer waste gas holes 14 are arranged along the radial direction of the air distribution plate 1, and each group of lower layer air inlet holes 13 and lower layer waste gas holes 14 are arranged alternately; an air inlet ring plate 2, surrounding the periphery of the air distribution plate 1, and the air inlet ring plate 2 is provided with at least one circle of annular air inlet channels 21 arranged circumferentially around the air inlet ring plate 2;

[0087] The intake substrate 3 is disposed above the air distribution plate 1 at the uppermost layer. Multiple groups of middle-layer intake holes 31 and middle-layer exhaust holes 32 are arranged on the intake substrate 3 and are radially opened along the intake substrate 3. The middle-layer intake holes 31 and the middle-layer exhaust holes 32 are respectively and correspondingly communicated with the corresponding lower-layer intake holes 13 and lower-layer exhaust holes 14.

[0088] The air guide plate 4 is disposed above the intake substrate 3. Multiple groups of upper-layer exhaust holes 41 that are radially opened along it and are correspondingly communicated with the corresponding middle-layer exhaust holes 32 are arranged on the air guide plate 4. A plurality of upper-layer air guide grooves 43 that are radially opened along its bottom surface facing the intake substrate 3 and are correspondingly communicated with the corresponding annular intake channels 21 and the lower middle-layer intake holes 31 below are arranged on the bottom surface of the air guide plate 4 facing the intake substrate 3, and each upper-layer air guide groove 43 and the upper-layer exhaust holes 41 are alternately arranged.

[0089] A plurality of exhaust gas channels 5 that are radially opened along its top surface facing away from the intake substrate 3 and are correspondingly communicated with the corresponding upper-layer exhaust holes 41 are arranged on the top surface of the air guide plate 4 facing away from the intake substrate 3. The intake device 6 is communicated with the annular intake channel 21.

[0090] In an application scenario of the gas spraying and recovery structure provided by the present invention, the gas spraying and recovery structure is applied to a photovoltaic coating equipment 10. The photovoltaic coating equipment 10 includes a reaction cavity 101 that can be evacuated, and further includes a turntable device 103 disposed at the bottom of the inner cavity 102 of the reaction cavity 101, and a driving device 104 for driving the turntable device 103 to rotate. The above-mentioned gas spraying and recovery structure is disposed in the inner cavity 102 and above the turntable device 103. The photovoltaic coating equipment 10 further includes an exhaust gas ring channel 105 that is disposed in the inner cavity 102 and surrounds the periphery of the air guide plate 4 and is respectively correspondingly communicated with each exhaust gas channel 5.

[0091] The turntable device 103 is used to evenly carry a plurality of material carriers 106. The top of the material carrier 106 is open. A plurality of target substrates 107 are placed in the material carrier 106 in a vertical posture and in close contact with each other, and the coating surface 108 to be coated of the target substrate 107 is arranged facing the upper gas spraying and recovery structure.

[0092] The gas input by the intake device 6 sequentially passes through the corresponding annular intake channel 21, upper-layer air guide groove 43, middle-layer intake hole 31, and lower-layer intake hole 13, is transported and sprayed into the inner cavity 102 of the reaction cavity 101 below the air distribution plate 1 at the lowermost layer, and reaches the coating surface 108 to be coated of the corresponding target substrate 107 accommodated in the material carrier 106 that rotates past below the air distribution plate 1 at the lowermost layer. After the gas reacts with the coating surface 108 to be coated of the target substrate 107, it quickly enters a pair of lower-layer exhaust holes 14 adjacent to both sides of the corresponding lower-layer intake hole 13 as exhaust gas, and sequentially passes through the corresponding adjacent lower-layer exhaust holes 14, middle-layer exhaust holes 32, upper-layer exhaust holes 41, exhaust gas channels 5, and the exhaust gas ring channel 105 disposed on the peripheral side of the inner cavity 102 of the reaction cavity 101 to discharge the exhaust gas from the reaction cavity 101.

[0093] As the turntable device 103 rotates continuously, the to-be-coated end faces 108 of the multiple target substrates 107 in each material carrier 106 uniformly sweep across the corresponding groups of lower air inlet holes 13 of the lowermost air equalizing plate 1, so that the to-be-coated end faces 108 of each target substrate 107 uniformly sweep across and contact the specific gas spraying areas corresponding to the groups of lower air inlet holes 13 of the lowermost air equalizing plate 1. It can batch realize targeted and uniform passivation coating on the cross-section of the half silicon wafer, and save the accommodation space of the target substrate 107 in the inner cavity 102 of the reaction chamber 101, thereby greatly improving the passivation coating processing efficiency of the photovoltaic coating equipment 10 for the half silicon wafer.

[0094] In this embodiment, the material carrier 106 is preferably a cassette.

[0095] In other embodiments, the material carrier 106 can also be a rack.

[0096] Please refer to Figures 1 - 6 Figures 8 and 9. In this embodiment, the top surface of the air inlet ring plate 2 facing the air inlet substrate 3 is closely attached to the bottom surface of the peripheral edge of the air inlet substrate 3 facing the air inlet ring plate 2. A plurality of ventilation holes 33 are provided on the peripheral edge of the air inlet substrate 3, and the ventilation holes 33 communicate with the corresponding annular air inlet channels 21 and the upper air guide grooves 43.

[0097] In other embodiments (not shown in the figure), each annular air inlet channel 21 of the air inlet replacement plate can also be directly communicated with the upper air guide groove 43 of the air guide plate 4 without passing through the ventilation holes 33 of the air inlet substrate 3, that is, the air inlet substrate 3 does not need to be provided with the above-mentioned ventilation holes 33.

[0098] Please refer to Figures 1 - 6 Figures 8 and 9. In this embodiment, the bottom surface of the air guide plate 4 is closely attached to the top surface of the air inlet substrate 3 facing the air guide plate 4, so that the upper air guide groove 43 and the top surface of the air inlet substrate 3 enclose an upper air guide cavity A communicating between the corresponding annular air inlet channel 21 and the lower middle air inlet holes 31; a plurality of middle air guide grooves 34 are arranged on the bottom surface of the air inlet substrate 3 facing the air equalizing plate 1 along its radial direction and are matched to communicate with the corresponding middle air inlet holes 31 and the lower lower air inlet holes 13, and each middle air guide groove 34 and the middle exhaust holes 32 are arranged alternately; the bottom surface of the air inlet substrate 3 is closely attached to the top surface of the uppermost air equalizing plate 1 facing the air inlet substrate 3, so that the middle air guide groove 34 and the top surface of the uppermost air equalizing plate 1 enclose a middle air guide cavity B communicating between the corresponding middle air inlet holes 31 and the lower air inlet holes 13.

[0099] Please refer to Figures 1 - 9 Figure 8, in this embodiment, the annular air inlet channel 21 includes:

[0100] The first annular channel 211, the second annular channel 212, and the third annular channel 213 are respectively arranged circumferentially around the intake annular plate 2 and are adjacent to each other at intervals in the intake replacement plate.

[0101] The upper air guide grooves 43 include:

[0102] A plurality of first air guide grooves 431 are evenly spaced and distributed on the bottom surface of the air guide plate 4 and are respectively connected to the corresponding segments of the first annular channel 211 in a matching manner; a plurality of second air guide grooves 432 are evenly spaced and distributed on the bottom surface of the air guide plate 4, and each second air guide groove 432 is alternately arranged with the first air guide groove 431 and is respectively connected to the corresponding segments of the second annular channel 212 in a matching manner; a plurality of third air guide grooves 433 are evenly spaced and distributed on the bottom surface of the air guide plate 4, are respectively located between adjacent first air guide grooves 431 and second air guide grooves 432, and are respectively connected to the corresponding segments of the third annular channel 213 in a matching manner.

[0103] The middle layer intake holes 31 include:

[0104] A plurality of first middle layer holes 311, second middle layer holes 312, and third middle layer holes 313 are evenly spaced and distributed on the intake substrate 3 and are respectively connected to the corresponding first air guide grooves 431, second air guide grooves 432, and third air guide grooves 433 in a matching manner.

[0105] The lower layer intake holes 13 include:

[0106] A plurality of first lower layer holes 131, second lower layer holes 132, and third lower layer holes 133 are evenly spaced and distributed on the corresponding air equalizing plate 1 and are respectively connected to the corresponding first middle layer holes 311, second middle layer holes 312, and third middle layer holes 313 in a matching manner.

[0107] Each upper layer exhaust hole 41 is respectively arranged between adjacent first air guide grooves 431 and third air guide grooves 433, between adjacent third air guide grooves 433 and second air guide grooves 432, and between adjacent second air guide grooves 432 and first air guide grooves 431. Each middle layer exhaust hole 32 is respectively arranged between adjacent first middle layer holes 311 and third middle layer holes 313, between adjacent third middle layer holes 313 and second middle layer holes 312, and between adjacent second middle layer holes 312 and first middle layer holes 311. Each lower layer exhaust hole 14 is respectively arranged between adjacent first lower layer holes 131 and third lower layer holes 133, between adjacent third lower layer holes 133 and second lower layer holes 132, and between adjacent second lower layer holes 132 and first lower layer holes 131.

[0108] Please refer to Figure 2 、 4 -9 together. In this embodiment, the air equalizing plate 1 includes:

[0109] The spray bottom plate 11 is arranged below the intake substrate 3 and serves as the uppermost air distribution plate 1; the air distribution upper plate 12 is arranged between the intake substrate 3 and the spray bottom plate 11 and serves as the lowermost air distribution plate 1; that is, there are two air distribution plates 1 arranged opposite to each other, one above the other.

[0110] The multiple groups of the first lower-layer holes 131 include: multiple groups of first air distribution through holes 1311 and first spray air holes 1312. The multiple groups of the second lower-layer holes 132 include: multiple groups of second air distribution through holes 1321 and second spray air holes 1322. The multiple groups of the third lower-layer holes 133 include: multiple groups of third air distribution through holes 1331 and third spray air holes 1332.

[0111] The multiple groups of first air distribution through holes 1311, second air distribution through holes 1321, and third air distribution through holes 1331 are radially spaced apart on the air distribution upper plate 12 along the radial direction of the air distribution upper plate 12 and are respectively matched and communicated with the corresponding first middle-layer holes 311, second middle-layer holes 312, and third middle-layer holes 313; the multiple groups of first spray air holes 1312, second spray air holes 1322, and third spray air holes 1332 are radially spaced apart on the spray bottom plate 11 along the radial direction of the spray bottom plate 11 and are respectively matched and communicated with the corresponding first air distribution through holes 1311, second air distribution through holes 1321, and third air distribution through holes 1331.

[0112] Each of the lower-layer exhaust holes 14 of the spray bottom plate 11 is respectively arranged between adjacent first spray air holes 1312 and third spray air holes 1332, between third spray air holes 1332 and second spray air holes 1322, and between second spray air holes 1322 and first spray air holes 1312.

[0113] Each of the lower-layer exhaust holes 14 of the air distribution upper plate 12 is respectively arranged between adjacent first air distribution through holes 1311 and third air distribution through holes 1331, between third air distribution through holes 1331 and second air distribution through holes 1321, and between second air distribution through holes 1321 and first air distribution through holes 1311.

[0114] Please refer to Figure 6 、 8 、9. As a preferred implementation manner of this embodiment, a plurality of lower-layer air guiding grooves 121 are arranged on the bottom surface of the air distribution upper plate 12 facing the spray bottom plate 11 along its radial direction, and are respectively matched and communicated with each of the first air distribution through holes 1311, second air distribution through holes 1321, and third air distribution through holes 1331 and the first spray air holes 1312, second spray air holes 1322, and third spray air holes 1332 below, and each of the lower-layer air guiding grooves 121 and the lower-layer exhaust holes 14 of the air distribution upper plate 12 are arranged alternately.

[0115] The bottom surface of the air - distributing upper plate 12 is closely attached to the top surface of the spray bottom plate 11 facing the air - distributing upper plate 12, so that the lower air - guiding groove 121 and the top surface of the spray bottom plate 11 enclose a lower air - guiding cavity C that communicates between each first air - distributing through - hole 1311, second air - distributing through - hole 1321, and third air - distributing through - hole 1331 and the lower first spray air - holes 1312, second spray air - holes 1322, and third spray air - holes 1332 below.

[0116] The above - mentioned upper air - guiding cavity A, middle air - guiding cavity B, and lower air - guiding cavity C respectively form upper, middle, and lower three - layer air - guiding gaps located between the corresponding annular air - inlet channels 21 and the lower middle air - inlet holes 31, between the corresponding middle air - inlet holes 31 and the lower air - inlet holes 13, and between the corresponding first air - distributing through - holes 1311, second air - distributing through - holes 1321, and third air - distributing through - holes 1331 and the lower first spray air - holes 1312, second spray air - holes 1322, and third spray air - holes 1332 below. In this way, a uniformly - distributed air - supply path with a progressive and stepped distribution is formed between the air - guiding plate 4, the air - inlet substrate 3, the uppermost air - distributing plate 1 (air - distributing upper plate 12), and the lowermost air - distributing plate 1 (spray bottom plate 11), so that the corresponding gas sequentially passes through at least three air - supply structures composed of the air - guiding plate 4, the air - inlet substrate 3, and at least one air - distributing plate 1. Moreover, a gas path of slot - hole - slot - hole - slot - hole is formed between the three air - supply structures, enabling the corresponding gas to pass through the three - layer air - supply structures of air - inlet, air - distribution, and air - spraying. After being sprayed out from the corresponding groups of lower air - inlet holes 13 of the lowermost air - distributing plate 1 (spray bottom plate 11), the spraying effect on the target substrate 107 below is more uniform.

[0117] At the same time, the above - mentioned upper air - guiding cavity A, middle air - guiding cavity B, and lower air - guiding cavity C achieve the airtight isolation of the corresponding gas, preventing the corresponding gas from escaping into the airways where other gases pass and generating a mixing reaction, which affects the process effect.

[0118] In other embodiments (not shown in the figure), there is only one air - distributing plate 1, that is, the above - mentioned uppermost and lowermost air - distributing plates 1 are both the only same air - distributing plate 1.

[0119] Please refer to Figure 4 、 7 、9. In a more preferred implementation manner of this embodiment, a plurality of spray air - outlet grooves 111 are arranged on the bottom surface of the spray bottom plate 11 facing away from the air - distributing upper plate 12 along its radial direction and are matched and communicated with the first spray air - holes 1312, second spray air - holes 1322, and third spray air - holes 1332, and each spray air - outlet groove 111 and the lower exhaust holes 14 of the spray bottom plate 11 are alternately arranged. The spray air - outlet grooves 111 play a certain guiding and diffusing role in the air flow after the gas is sprayed out from the corresponding groups of first spray air - holes 1312, second spray air - holes 1322, and third spray air - holes 1332 of the spray bottom plate 11, making the spraying effect of the sprayed gas on the target substrate 107 below more uniform.

[0120] In this embodiment, the air guide plate 4, the intake air substrate 3, the air distribution plate 1 (the spray bottom plate 11 and the air distribution upper plate 12), the waste gas cover plate 8, the waste gas partition rib 7 and the isolation ring plate 9 are all processed and formed by aluminum plates or aluminum profiles, so as to greatly reduce the overall weight of the gas spraying and recovery structure and meet the spraying process requirements for the target substrate 107.

[0121] In this embodiment, the air guide plate 4, the intake air substrate 3, the air distribution plate 1 (the spray bottom plate 11 and the air distribution upper plate 12), the waste gas cover plate 8, the waste gas partition rib 7 and the isolation ring plate 9 are mutually fastened and connected by a connection structure.

[0122] As a preferred implementation manner of this embodiment, the connection structure uses screws or bolts, and can also be a welding structure.

[0123] Please refer to Figures 1 - 8 together. As a preferred implementation manner of this embodiment, the intake device 6 includes:

[0124] The first intake air pipeline 61, the second intake air pipeline 62 and the third intake air pipeline 63 are respectively used for correspondingly inputting the first reaction gas, the second reaction gas and the isolation gas into the first annular channel 211, the second annular channel 212 and the third annular channel 213.

[0125] As a more preferred implementation manner of this embodiment, the first reaction gas is gaseous TMA (TriMellitic Anhydride, that is, trimellitic anhydride, abbreviated as trimellitic anhydride) as a precursor, the second reaction gas is water vapor, and the isolation gas is nitrogen. Since the first reaction gas (precursor gaseous TMA), the second reaction gas (water vapor) and the isolation gas (nitrogen) respectively use their own independent intake channels (gas distribution flow paths), the three do not interfere with and affect each other, and the gas flow rate and flow velocity can be independently regulated respectively, so as to flexibly control the process effect.

[0126] Please refer to Figures 6 - 8 together. In the preferred implementation manner of this embodiment, a plurality of middle-layer installation holes (not shown in the figure) are uniformly distributed on the intake air substrate 3 along its radial direction, and a plurality of lower-layer installation holes (not shown in the figure) are uniformly distributed on the air distribution plate 1 along its radial direction.

[0127] The gas spraying and recovery structure further includes:

[0128] A plurality of middle-layer inlay strips 35 are detachably inlaid in each of the middle-layer installation holes respectively; a plurality of lower-layer inlay strips 15 are detachably inlaid in each of the lower-layer installation holes respectively.

[0129] Each group of middle-layer intake air holes 31 are uniformly spaced along the radial direction of the intake air substrate 3 on the middle-layer inlay strip 35, and each group of lower-layer intake air holes 13 are uniformly spaced along the radial direction of the corresponding air distribution plate 1 on the lower-layer inlay strip 15.

[0130] According to the actual production process requirements, the middle layer insert strips 35 and the lower layer insert strips 15 with different numbers of holes can be customized. When it is necessary to change the number of hole positions of the middle layer intake holes 31 and the lower layer intake holes 13 in each group, only the original middle layer insert strips 35 and the lower layer insert strips 15 need to be directly removed, and the middle layer insert strips 35 and the lower layer insert strips 15 with matching numbers of holes are correspondingly replaced, so that the number of hole positions can be quickly adjusted. By cooperating with the control of the rotation speed of the turntable device 103 in the inner cavity 102 of the lower reaction cavity 101, according to the actual production process requirements, the spraying process effect of the gas spraying and recovery structure can be flexibly adjusted.

[0131] Please refer to Figures 1 - 9 , in this embodiment, the gas distribution plate 1, the intake air substrate 3, and the air guide plate 4 are all circular ring plates with an opening D in the middle. The intake air ring plate 2 surrounds the gas distribution plate 1 along the circumferential direction of the gas distribution plate 1 and is arranged on the peripheral side of the gas distribution plate 1, so that the gas spraying and recovery structure is cylindrical as a whole. The positions of the corresponding air channels, slots, spraying holes, and waste gas holes of the first reaction gas (precursor gaseous TMA), the second reaction gas (water vapor), and the isolation gas (nitrogen) can be relatively evenly dispersed, so as to realize uniform spraying on the target substrate in the lower inner cavity 102.

[0132] Please refer to Figures 1 - 3 , 6, 9. In the preferred implementation manner of this embodiment, the gas spraying and recovery structure further includes:

[0133] A plurality of waste gas partition ribs 7 are arranged along the radial direction of the air guide plate 4 and are spaced apart on the top surface of the air guide plate 4; a waste gas cover plate 8, which has an opening D in the middle and is circular ring-shaped, is covered and installed above each waste gas partition rib 7; an isolation ring plate 9 is arranged along the circumferential direction of the air guide plate 4 on the top surface of the air guide plate 4, and the outer circumferential side of the isolation ring plate 9 abuts against one end of each waste gas partition rib 7 facing the opening D of the air guide plate 4 and the inner circumferential side of the waste gas cover plate 8.

[0134] The waste gas cover plate 8 and the adjacent waste gas partition ribs 7, the isolation ring plate 9, and the air guide plate 4 enclose each waste gas exhaust channel 5, and the adjacent waste gas exhaust channels 5 are isolated from each other.

[0135] Please refer to Figures 1 - 3, 5, 6, 9. As a preferred embodiment of this embodiment, the exhaust gas cover plate 8 and the adjacent exhaust gas separating ribs 7, the isolation ring plate 9 and the air guiding plate 4 enclose each exhaust gas passage 5. The projected area of the exhaust gas passage 5 in the thickness direction of the gas spraying and recovery structure (i.e., the thickness direction of each layer plate) covers the corresponding upper layer air guiding groove 43 below it and a pair of upper layer exhaust gas holes 41 on its adjacent sides. So that the corresponding gas (the first reaction gas, the second reaction gas or the isolation gas) sprayed to the inner cavity 102 of the lower reaction cavity 101 from each upper layer air guiding groove 43 and its corresponding middle layer air inlet hole 31 and lower layer air inlet hole 13 enters the corresponding exhaust gas passage 5 through a pair of lower layer exhaust gas holes 14, a pair of middle layer exhaust gas holes 32 and a pair of upper layer exhaust gas holes 41 on the adjacent sides corresponding to the air distribution plate 1 (spraying bottom plate 11) of the lowermost layer after participating in the reaction or protection. And each exhaust gas passage 5 is used to discharge one of the first reaction gas, the second reaction gas or the isolation gas, without mixing with other gases, so that the intake channels (gas distribution flow paths) and recovery channels (exhaust gas circuits) of adjacent different gases are kept independent of each other, avoiding pollution caused by the contact and generation of reactants due to the mixing of different process gases in the gas spraying and recovery structure.

[0136] In other embodiments, the annular intake passage 21 may further include a fourth ring passage and more ring passages. Correspondingly, the gas spraying and recovery structure can independently spray and recover more than three different reaction gases, which will not be elaborated here.

[0137] Please refer to Figure 10 , the present invention also provides a photovoltaic coating device 10, which includes a reaction cavity 101 that can be evacuated, and further includes a turntable device 103 provided at the bottom of the inner cavity 102 of the reaction cavity 101, a driving device 104 for driving the turntable device 103 to rotate, the above-mentioned gas spraying and recovery structure provided in the inner cavity 102 and above the turntable device 103, and an exhaust gas ring passage 105 placed in the inner cavity 102 and surrounding the periphery of the air guiding plate 4 and respectively corresponding to and communicating with each exhaust gas passage 5.

[0138] The turntable device 103 is used to carry a plurality of material carriers 106. A plurality of target substrates 107 are placed in the material carriers 106, and the end face 108 to be coated of the target substrate 107 is arranged facing the upper gas spraying and recovery structure.

[0139] When the turntable device 103 rotates, the gas input by the intake device 6 sequentially passes through the corresponding annular intake passage 21, upper layer air guiding groove 43, middle layer air inlet hole 31, and lower layer air inlet hole 13, is transported and sprayed to the end face 108 to be coated of the target substrate 107 in the corresponding material carrier 106 rotating below the air distribution plate 1 of the lowermost layer, and the exhaust gas is discharged from the reaction cavity through the corresponding adjacent lower layer exhaust gas holes 14, middle layer exhaust gas holes 32, upper layer exhaust gas holes 41, exhaust gas passage 5 and exhaust gas ring passage 105 in sequence.

[0140] Please refer to Figure 10 , in this embodiment, the photovoltaic coating equipment 10 further includes:

[0141] An adjusting structure 109, which is used to adjust the installation height of the gas spraying and recovery structure in the inner cavity 102, so as to adjust the distance between the lowest gas distribution plate 1 and the end face 108 to be coated, and realize the adjustment of the spraying process effect.

[0142] Please refer to Figure 10 , in a preferred implementation manner of this embodiment, the reaction cavity 101 includes a cavity seat 1011 and a top cover 1012 mechanism hermetically covered above the cavity seat 1011. The top cover 1012 mechanism includes a top cover 1012 and at least two lifters (not shown in the figure) for driving the top cover 1012 to lift and lower. The entire top cover 1012 can be opened for operators to maintain, and can be used to open the top cover 1012 to clean the space of the inner cavity 102 and the device during maintenance.

[0143] Please refer to Figure 10 , in a preferred implementation manner of this embodiment, the above-mentioned adjusting structure 109 includes:

[0144] A support column 1091, one end of which is adjustably screwed to the top cover 1012 through a lifting bolt (not shown in the figure) and a gasket (not shown in the figure), and the opposite end of the support column 1091 is fixedly connected to the corresponding middle opening D of the gas distribution plate 1, the intake substrate 3, the air guide plate 4, and the waste gas cover 8.

[0145] The gas enters from the side wall at the top of the reaction cavity 101, and a pressing block is installed on the top cover 1012 for air transportation. By adjusting the height of the lifting stud of the gas spraying and recovery structure (increasing or decreasing the gasket), the height of the gas spraying and recovery structure is changed. At the same time, the first intake pipe 61, the second intake pipe 62, and the third intake pipe 63 use bellows for air transportation, which can adapt to adjust the relative height between the gas spraying and recovery structure and the end face 108 to be coated of the target substrate 107 accommodated in each material carrier 106 in the lower inner cavity 102.

[0146] In a more preferred implementation manner of this embodiment, the gas spraying and recovery structure and the end face 108 to be coated of the target substrate 107 accommodated in each material carrier 106 in the lower inner cavity 102 are located on the same horizontal plane. The target substrates 107 accommodated in the same material carrier 106 are closely and vertically attached and parallel to the tangent direction of the turntable of the turntable device 103, so that the turntable support surface of the turntable device 103 can carry more material carriers 106 and target substrates 107, and improve the passivation coating treatment efficiency of the photovoltaic coating equipment 10 for the target substrate 107 (half silicon wafer).

[0147] In this embodiment, the photovoltaic coating equipment 10 is an ALD coating equipment, the target substrate 107 is a half substrate after slicing a whole substrate, and the end face to be coated 108 is the sliced section of the half substrate.

[0148] In this embodiment, the photovoltaic coating equipment 10 further includes a furnace door (not shown in the figure), which is movably installed at the open end of the reaction cavity 101. The inner cavity 102 of the reaction cavity 101 is opened and closed by rotating the furnace door, so that an operator or a wafer transfer device can take and place the material carrier 106 containing the target substrate 107 in the inner cavity 102.

[0149] Please refer to Figure 1 、 3 -6. As a preferred implementation manner of this embodiment, since materials need to enter and exit at the furnace door, the gas distribution plate 1 (the upper gas distribution plate 12 and the spray bottom plate 11) has a fan-shaped notch F corresponding to the installation space of the furnace door below, which matches the size of the furnace door, so as to save the material of the gas distribution plate 1. The intake substrate 3 and the air guide plate 4 do not have the above-mentioned holes and slots for spray intake and waste gas recovery corresponding to the installation space of the furnace door below and the fan-shaped notch F. The top of the air guide plate 4 also forms a fan-shaped notch F where the waste gas partition ribs 7 and the waste gas cover plate 8 are not provided corresponding to the installation space of the furnace door below and the fan-shaped notch F, so as to save the material of the exhaust gas channel 5. The intake ring plate 2 and the isolation ring plate 9 are open rings instead of closed rings. The intake ring plate 2 and the isolation ring plate 9 also form arc-shaped openings corresponding to the installation space of the furnace door below and the fan-shaped notch F, which match the size of the fan-shaped notch F. The two ends of the intake ring plate 2 and the isolation ring plate 9 corresponding to the arc-shaped openings are closed.

[0150] In this embodiment, since the gas spraying and recovery structure is compactly arranged in the height direction, enough installation space can be reserved at the top of the inner cavity 102 corresponding to the upper part of the gas spraying and recovery structure. The photovoltaic coating equipment 10 further includes a heating device (not shown in the figure), including a bottom surface heater assembly, a side surface heater assembly and a top surface heater assembly, which are respectively installed between the bottom surface of the inner cavity 102 and the turntable device 103, on the inner side wall of the inner cavity 102 and at the reserved installation space above the top surface of the gas spraying and recovery structure in the inner cavity 102. Among them, the bottom surface heater assembly and the side surface heater assembly heat the inner cavity 102 by means of thermal radiation, and the top surface heater assembly is in direct contact with the top surface of the gas spraying and recovery structure to achieve heat conduction of the process gas flowing through it, improve the gas heating efficiency, and meet the gas temperature requirements of the process inside the inner cavity 102.

[0151] In a preferred implementation manner of this embodiment, the working principle of the photovoltaic coating equipment 10 applying the above gas spraying and recovery structure is as follows:

[0152] The first reaction gas (gaseous TMA) input through the first intake pipeline 61 of the intake device 6 is successively transported and sprayed into the inner cavity 102 of the reaction chamber 101 below the lowermost gas distribution plate 1 (spray plate) through the first annular intake channel 21, multiple upper-layer gas guiding grooves 43 (each first gas guiding groove 431), multiple middle-layer intake holes 31 (each first middle-layer hole 311), and multiple lower-layer intake holes 13 (successively passing through each first gas distribution through-hole 1311 of the gas distribution upper plate 12 and each first spray air hole 1312 of the spray plate).

[0153] Meanwhile, the second reaction gas (water vapor) input through the second intake pipeline 62 of the intake device 6 is successively transported and sprayed into the inner cavity 102 of the reaction chamber 101 below the lowermost gas distribution plate 1 (spray plate) through the second annular intake channel 21, multiple upper-layer gas guiding grooves 43 (each second gas guiding groove 432), multiple middle-layer intake holes 31 (each second middle-layer hole 312), and multiple lower-layer intake holes 13 (successively passing through each second gas distribution through-hole 1321 of the gas distribution upper plate 12 and each second spray air hole 1322 of the spray plate).

[0154] Meanwhile, the isolation gas (nitrogen) input through the third intake pipeline 63 of the intake device 6 is successively transported and sprayed into the inner cavity 102 of the reaction chamber 101 below the lowermost gas distribution plate 1 (spray plate) through the third annular intake channel 21, multiple upper-layer gas guiding grooves 43 (each third gas guiding groove 433), multiple middle-layer intake holes 31 (each third middle-layer hole 313), and multiple lower-layer intake holes 13 (successively passing through each third gas distribution through-hole 1331 of the gas distribution upper plate 12 and each third spray air hole 1332 of the spray plate).

[0155] The first reaction gas (gaseous TMA), the second reaction gas (water vapor), and the isolation gas (nitrogen) transported and sprayed into the inner cavity 102 of the reaction chamber 101 below it by the intake device 6 through the above gas spraying and recovery structure respectively form gas spraying areas covering a certain space of the inner cavity 102, including a first special gas area formed by spraying gaseous TMA, a second special gas area formed by spraying water vapor and arranged alternately with the first special gas area, and an isolation gas area formed by spraying nitrogen and alternately isolating the adjacent first special gas area and the second special gas area.

[0156] As a more optimal implementation mode of this embodiment, the nitrogen spraying speed is much greater than the spraying speeds of gaseous TMA and water vapor, so that nitrogen is quickly sprayed and fills the isolation gas area between the first special gas area and the second special gas area, ensuring the protection effect of nitrogen as an isolation gas on the adjacent first special gas area and the second special gas area.

[0157] When the turntable device 103 rotates, the target substrate 107 accommodated in the corresponding material carrier 106 that rotates past below the gas distribution plate 1 at the lowest layer has its end face 108 to be coated scanned in sequence and alternately pass through the above-mentioned first special gas area, isolation gas area, and second special gas area. And respectively within the first special gas area and the second special gas area, the end face 108 to be coated reacts in real time with the first reaction gas (gaseous TMA) and the second reaction gas (water vapor) respectively. And when transitioning between the first special gas area and the second special gas area, gas isolation is carried out through the isolation gas area to achieve gas protection and prevent gaseous TMA and water vapor from contacting and reacting in the inner cavity 102 of the reaction chamber 101, resulting in the reaction products contaminating the inner cavity 102 and the target substrate 107, thus successfully completing the reaction connection.

[0158] After the first reaction gas (gaseous TMA), the second reaction gas (water vapor) react with the end face 108 to be coated of the target substrate 107 and the isolation gas (nitrogen) plays a role in isolation and protection, they quickly enter a pair of lower-layer exhaust holes 14 adjacent to both sides of the corresponding lower-layer intake hole 13 as waste gas, and sequentially pass through the corresponding adjacent lower-layer exhaust holes 14, middle-layer exhaust holes 32, upper-layer exhaust holes 41, exhaust gas duct 5, and the exhaust gas annular channel 105 provided on the peripheral side of the inner cavity 102 of the reaction chamber 101 to timely discharge the waste gas from the reaction chamber 101, avoiding its dispersion in the inner cavity 102.

[0159] Meanwhile, on the opposite sides of a pair of lower-layer exhaust holes 14 adjacent to both sides of the corresponding lower-layer intake hole 13 are respectively a pair of lower-layer intake holes 13 for spraying the isolation gas (nitrogen), thus avoiding the first reaction gas (gaseous TMA) and the second reaction gas (water vapor) from contacting and reacting with the adjacent second reaction gas (water vapor) and the first reaction gas (gaseous TMA) when entering the corresponding lower-layer exhaust holes 14 to generate reactants that contaminate the inner cavity 102, and preventing the specific gases in the first special gas area and the second special gas area from being interfered and affected by the gases in the adjacent areas, ensuring the process effect of the passivation coating treatment of the half-silicon wafer by the photovoltaic coating equipment.

[0160] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Those of ordinary skill in the art should understand that any modifications, equivalent replacements, and improvements made within the spirit and principle of the present invention should be included within the protection scope of the present invention.

Claims

1. A gas spraying and recovery structure, characterized in that: include: At least one layer of air-distributing plate (1), each layer of the air-distributing plate (1) being provided with a plurality of groups of lower-layer air inlet holes (13) and lower-layer exhaust holes (14) opened along the radial direction thereof, and each group of lower-layer air inlet holes (13) and lower-layer exhaust holes (14) being arranged alternately; An air inlet ring plate (2) is arranged around the circumference of the air homogenizing plate (1) and is provided with at least one annular air inlet passage (21) arranged along its circumference; An air intake substrate (3) is disposed above the uppermost air homogenizing plate (1), and is provided with a plurality of groups of middle-layer air intake holes (31) and middle-layer exhaust holes (32) opened along its radial direction, wherein the middle-layer air intake holes (31) and the middle-layer exhaust holes (32) are matched and connected to the corresponding lower-layer air intake holes (13) and lower-layer exhaust holes (14) respectively; An air guide plate (4) is arranged above the air intake substrate (3), and is provided with a plurality of groups of upper exhaust holes (41) opened along its radial direction and matched to be connected to the corresponding middle exhaust holes (32); the air guide plate (4) is provided with a plurality of upper air guide grooves (43) opened along its radial direction and matched to be connected to the corresponding annular air intake passage (21) and the lower middle air intake holes (31) on the bottom surface of the air intake substrate (3), and each upper air guide groove (43) and the upper exhaust holes (41) are alternately arranged; A plurality of exhaust gas passages (5) are arranged on the top surface of the air guide plate (4) facing away from the air intake substrate (3) and are opened along the radial direction thereof and matched and connected to the corresponding upper exhaust gas holes (41); An air intake device (6) is connected to the annular air intake passage (21).

2. The gas spraying and recovery structure according to claim 1, characterized in that: The top surface of the air intake ring plate (2) facing the air intake substrate (3) is tightly fitted with the bottom surface of the air intake ring plate (2) facing the periphery of the air intake substrate (3), and a plurality of air vents (33) are provided on the periphery of the air intake substrate (3), wherein the air vents (33) are connected to the corresponding annular air intake channel (21) and the upper air guide groove (43).

3. The gas spraying and recovery structure according to claim 1, characterized in that: The bottom surface of the air guide plate (4) is tightly fitted to the top surface of the air intake substrate (3) facing the air guide plate (4), so that the upper air guide groove (43) and the top surface of the air intake substrate (3) form an upper air guide cavity (A) connected between the corresponding annular air intake channel (21) and the lower middle air intake hole (31); The air intake substrate (3) is provided with a plurality of middle-layer air guide grooves (34) which are opened along the radial direction and match and connect the corresponding middle-layer air intake holes (31) and the lower-layer air intake holes (13) below, and each middle-layer air guide groove (34) and the middle-layer exhaust gas holes (32) are arranged alternately; The bottom surface of the air intake substrate (3) is tightly fitted to the top surface of the uppermost air uniforming plate (1) facing the air intake substrate (3), so that the middle-layer air guide groove (34) and the top surface of the uppermost air uniforming plate (1) form a middle-layer air guide cavity (B) that is connected between the corresponding middle-layer air intake hole (31) and the lower-layer air intake hole (13).

4. The gas spraying and recovery structure according to any one of claims 1 to 3, characterized in that: The annular air inlet (21) comprises: The first annular channel (211), the second annular channel (212) and the third annular channel (213) are respectively arranged in the air intake exchange plate in a circumferential direction of the air intake ring plate (2) and are arranged adjacent to each other in sequence and at intervals; The upper air guide groove (43) comprises: A plurality of first air guide grooves (431) are evenly spaced and distributed on the bottom surface of the air guide plate (4), and are respectively matched with corresponding sections connected to the first annular channel (211); A plurality of second air guide grooves (432) are evenly spaced and distributed on the bottom surface of the air guide plate (4), each of the second air guide grooves (432) and the first air guide grooves (431) being arranged alternately and respectively matching corresponding segments connected to the second annular channel (212); A plurality of third air guide grooves (433) are evenly spaced and distributed on the bottom surface of the air guide plate (4), respectively correspondingly located between adjacent first air guide grooves (431) and second air guide grooves (432), and respectively matched with corresponding segments connected to the third annular channel (213); The plurality of groups of middle-layer air inlet holes (31) include: A plurality of groups of first middle-layer holes (311), second middle-layer holes (312), and third middle-layer holes (313) are evenly spaced and distributed on the air inlet substrate (3), and are matched and connected to the corresponding first air guide groove (431), second air guide groove (432), and third air guide groove (433); The plurality of groups of lower air inlet holes (13) include: A plurality of groups of first lower layer holes (131), second lower layer holes (132) and third lower layer holes (133) are evenly spaced and distributed on the corresponding air-distributing plate (1), and are matched and connected to the corresponding first middle layer holes (311), second middle layer holes (312) and third middle layer holes (313); Each group of upper exhaust holes (41) is respectively arranged between the adjacent first air guide groove (431) and the third air guide groove (433), the adjacent third air guide groove (433) and the second air guide groove (432), and the adjacent second air guide groove (432) and the first air guide groove (431); Each group of middle-layer exhaust gas holes (32) is respectively arranged between adjacent first middle-layer holes (311) and third middle-layer holes (313), adjacent third middle-layer holes (313) and second middle-layer holes (312), and adjacent second middle-layer holes (312) and first middle-layer holes (311); Each group of lower layer exhaust gas holes (14) is respectively arranged between adjacent first lower layer holes (131) and third lower layer holes (133), adjacent third lower layer holes (133) and second lower layer holes (132), and adjacent second lower layer holes (132) and first lower layer holes (131).

5. The gas spraying and recovery structure according to claim 4, characterized in that: The air-distributing plate (1) comprises: A spray base plate (11) is arranged below the air intake base plate (3); An upper gas-uniform plate (12) is disposed between the gas-intake base plate (3) and the spray base plate (11); The plurality of groups of the first lower layer holes (131) include: A plurality of groups of first air-uniform through holes (1311) and first spray air holes (1312); The plurality of groups of the second lower layer holes (132) include: A plurality of groups of second air-uniform through holes (1321) and second spray air holes (1322); The plurality of groups of third lower layer holes (133) include: A plurality of groups of third air-uniform through holes (1331) and third spray air holes (1332); A plurality of groups of the first gas uniforming through holes (1311), the second gas uniforming through holes (1321), and the third gas uniforming through holes (1331) are distributed on the gas uniforming upper plate (12) at intervals along the radial direction of the gas uniforming upper plate (12), and are matched and connected to the corresponding first middle-layer holes (311), the second middle-layer holes (312), and the third middle-layer holes (313); A plurality of groups of the first spray air holes (1312), the second spray air holes (1322) and the third spray air holes (1332) are distributed on the spray base plate (11) at intervals along the radial direction of the spray base plate (11), and are matched and connected to the corresponding first uniform air through holes (1311), the second uniform air through holes (1321) and the third uniform air through holes (1331); The lower exhaust holes (14) of the spray bottom plate (11) are respectively arranged correspondingly between the adjacent first spray hole (1312) and the third spray hole (1332), the third spray hole (1332) and the second spray hole (1322), and between the second spray hole (1322) and the first spray hole (1312); The lower exhaust gas holes (14) of the gas-uniform upper plate (12) are respectively arranged correspondingly between the adjacent first gas-uniform through hole (1311) and the third gas-uniform through hole (1331), the third gas-uniform through hole (1331) and the second gas-uniform through hole (1321), and between the second gas-uniform through hole (1321) and the first gas-uniform through hole (1311).

6. The gas spraying and recovery structure according to claim 4, characterized in that: A plurality of lower-layer air guide grooves (121) are arranged on the bottom surface of the upper air-uniform plate (12) facing the spray bottom plate (11) and are opened along the radial direction thereof and match and connect each of the first air-uniform through holes (1311), the second air-uniform through holes (1321) and the third air-uniform through holes (1331) with the first spray air holes (1312), the second spray air holes (1322) and the third spray air holes (1332) below, and each of the lower-layer air guide grooves (121) and the lower-layer exhaust gas holes (14) of the upper air-uniform plate (12) are alternately arranged; The bottom surface of the gas-uniform upper plate (12) is tightly fitted to the top surface of the spray bottom plate (11) facing the gas-uniform upper plate (12), so that the lower gas guide groove (121) and the top surface of the spray bottom plate (11) form a lower gas guide cavity (C) that is connected between each of the first gas-uniform through holes (1311), the second gas-uniform through holes (1321) and the third gas-uniform through holes (1331) and the first spray air holes (1312), the second spray air holes (1322) and the third spray air holes (1332) below.

7. The gas spraying and recovery structure according to claim 4, characterized in that: The air intake device (6) comprises: The first air inlet pipeline (61), the second air inlet pipeline (62) and the third air inlet pipeline (63) are used to respectively input the first reaction gas, the second reaction gas and the isolation gas into the first annular channel (211), the second annular channel (212) and the third annular channel (213).

8. The gas spraying and recovery structure according to any one of claims 1 to 3, characterized in that: The air inlet substrate (3) is evenly provided with a plurality of middle-layer mounting holes opened along its radial direction, and the air homogenizing plate (1) is evenly provided with a plurality of lower-layer mounting holes opened along its radial direction; The gas spraying and recovery structure also includes: A plurality of middle layer inserts (35) are detachably embedded in each middle layer installation hole; A plurality of lower layer inserts (15) are detachably inserted into each lower layer installation hole; Each group of the middle-layer air inlet holes (31) is evenly spaced along the radial direction of the air inlet substrate (3) on the middle-layer inlay strip (35), and each group of the lower-layer air inlet holes (13) is evenly spaced along the radial direction of the corresponding air homogenizing plate (1) on the lower-layer inlay strip (15).

9. The gas spraying and recovery structure according to any one of claims 1 to 3, characterized in that: The air homogenizing plate (1), the air intake substrate (3) and the air guide plate (4) are all annular plates with an opening (D) in the middle, and the air intake ring plate (2) is arranged around the circumference of the air homogenizing plate (1) and surrounds the circumference of the air homogenizing plate (1).

10. The gas spraying and recovery structure according to claim 9, characterized in that: Also includes: A plurality of exhaust gas separation ribs (7) are arranged along the radial direction of the air guide plate (4) and are distributed at intervals on the top surface of the air guide plate (4); An exhaust gas cover plate (8) is provided with an opening (D) in the middle thereof and is in a circular ring shape, and is installed to cover and cover each of the exhaust gas partition ribs (7); An isolation ring plate (9) is arranged on the top surface of the air guide plate (4) along the circumference of the air guide plate (4), and the outer circumferential side of the isolation ring plate (9) abuts against one end of each exhaust gas partition rib (7) facing the opening (D) of the air guide plate (4) and the inner circumferential side of the exhaust gas cover plate (8); The exhaust gas cover plate (8) and the adjacent exhaust gas partition ribs (7), the isolation ring plate (9) and the air guide plate (4) form the respective exhaust gas ducts (5), and adjacent exhaust gas ducts (5) are isolated from each other.

11. A photovoltaic coating device, comprising a vacuumable reaction chamber (101), characterized in that: It also comprises a turntable device (103) arranged at the bottom of the inner cavity (102) of the reaction chamber (101), a driving device (104) for driving the turntable device (103) to rotate, and a gas spraying and recovery structure according to any one of claims 1 to 10 arranged in the inner cavity (102) and above the turntable device (103), and an exhaust gas annular channel (105) arranged in the inner cavity (102) and surrounding the circumference of the air guide plate (4) and correspondingly connected to each of the exhaust gas channels (5); The turntable device (103) is used to carry a plurality of material carriers (106), a plurality of target substrates (107) are placed in the material carriers (106), and the end surfaces (108) to be coated of the target substrates (107) are arranged toward the gas spraying and recovery structure above; When the turntable device (103) rotates, the gas input by the air intake device (6) is transported and sprayed to the end face (108) to be coated of the target substrate (107) in the corresponding material carrier (106) rotating below the lowest gas homogenizing plate (1) through the corresponding annular air intake channel (21), the upper air guide groove (43), the middle air intake hole (31), and the lower air intake hole (13), and then discharged from the reaction chamber (101) through the corresponding adjacent lower exhaust hole (14), the middle exhaust hole (32), the upper exhaust hole (41), the exhaust channel (5), and the exhaust ring channel (105).

12. The photovoltaic coating device according to claim 11, characterized in that: Also includes: The regulating structure (109) is used to adjust the installation height of the gas spraying and recovery structure in the inner cavity (102) so as to adjust the distance between the lowest gas homogenizing plate (1) and the end surface (108) to be coated.

13. The photovoltaic coating device according to claim 11, characterized in that: The photovoltaic coating device (10) is an ALD coating device, the target substrate (107) is a half-substrate obtained by slicing a whole substrate, and the end surface to be coated (108) is a sliced ​​cross section of the half-substrate.

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