Gas pressure control system and method for atomic layer deposition reaction chamber

Abstract

The invention provides a gas pressure control system and method for an atomic layer deposition reaction chamber, and is applied to the technical field of general control or regulation systems. Factors such as temperature change and gas flow change in an atomic layer deposition reaction chamber, a gas pressure measurement value actually collected by a vacuum gauge, a gas pressure expected value set by a preset process program and the like are all brought into an influence factor range of whole gas pressure control; the expansion state observer determines the corresponding gas pressure adjustment amount under the influence of the influence factors based on the input influence factors, and then controls the opening angle of the butterfly valve of the dry pump of the reaction chamber according to the gas pressure adjustment amount, so that the influence of various interference items on the gas pressure adjustment precision can be reduced, and the gas pressure adjustment precision is improved. Therefore, more accurate gas pressure control is realized.

Description

Technical Field

[0001] This application relates to the technical field of general control or regulation systems, and particularly to a gas pressure control system and method for an atomic layer deposition reaction chamber. Background Art

[0002] ALD (Atomic Layer Deposition) is a common process flow in the semiconductor field for semiconductor processing. Among them, the enclosed space for realizing atomic layer deposition is the reaction chamber of atomic layer deposition, also called the process chamber. The ALD atomic layer deposition technology belongs to a thin film deposition technology. Specifically, reaction gases are injected into the reaction chamber to react with substances on the surface of the wafer to change the physical and chemical properties of the wafer. Among them, the substances already adsorbed on the surface of the wafer are commonly referred to as precursors in the industry.

[0003] During the entire atomic layer deposition process, the stability of the gas pressure in the reaction chamber becomes one of the major factors affecting the accuracy of semiconductor production processes. Exemplarily, the gas pressure fluctuation in the reaction chamber will cause changes in the concentration and distribution of reaction gases in the reaction chamber. In the area with high gas pressure, gas molecules collide frequently, the reaction rate increases, and the thickness of the thin film deposition increases. While in the area with low gas pressure, the reaction speed slows down and the deposition thickness decreases, resulting in uneven thin film deposition thickness, seriously affecting the process quality of the entire wafer, and thus leading to an increase in the defective product rate.

[0004] Thus, how to accurately control the gas pressure in the atomic deposition reaction chamber has become the key to ensuring the accuracy of the entire atomic layer deposition process. Summary of the Invention

[0005] In view of this, the embodiments of this application provide a gas pressure control system and method for an atomic layer deposition reaction chamber, which can accurately control the gas pressure in the reaction chamber of atomic layer deposition to ensure the process quality of atomic layer deposition.

[0006] In a first aspect, the embodiments of this application provide a gas pressure control system for an atomic layer deposition reaction chamber. Among them, the gas pressure control system includes: a temperature sensor, a vacuum gauge, a programmable logic controller, a butterfly valve controller, a butterfly valve, a dry pump, and a mass flow controller. The execution logic of an extended state observer is preset in the programmable logic controller. The temperature sensor and the vacuum gauge are arranged in the atomic layer deposition reaction chamber. The programmable logic controller is used for: Obtaining the temperature change △T in the chamber collected by the temperature sensor, the gas flow change △W in the chamber collected by the mass flow controller, and the gas pressure measurement value P in the chamber collected by the vacuum gauge VG, the expected gas pressure value P set by the preset process program SP ; Using the temperature change △T, the gas flow rate change △W, the measured gas pressure value P VG and the expected gas pressure value P SP as the input parameters of the extended state observer, run the extended state observer; wherein, the extended state observer is based on the input temperature change △T, the gas flow rate change △W, the measured gas pressure value P VG , the expected gas pressure value P SP as the observation basis, to determine the mathematical model of the adjustment amount of the gas pressure in the reaction chamber; According to the adjustment amount of the gas pressure determined by the extended state observer, send a control instruction to the butterfly valve controller, so that the butterfly valve controller controls the opening angle of the butterfly valve according to the control instruction.

[0007] In some possible embodiments, the extended state observer is constructed in advance in the following manner: Construct a system function relationship with the expected opening angle of the valve of the butterfly valve as the independent variable and the gas pressure in the atomic layer deposition reaction chamber as the dependent variable, and the system function relationship satisfies the following formula:

[0008]

[0009] wherein, p is the gas pressure in the atomic layer deposition reaction chamber, is p the first derivative of, is p the second derivative of, is the quantity of the gas pressure in the atomic layer deposition reaction chamber in the frequency domain; is the expected opening angle of the valve of the butterfly valve, is the quantity of the actual opening angle of the valve of the butterfly valve in the frequency domain; is the position control transfer function of the butterfly valve, is the hyperparameter of the butterfly valve position; is the valve interception area control transfer function of the butterfly valve, is the hyperparameter of the valve interception area of the butterfly valve; is the valve flow control transfer function of the butterfly valve, is the hyperparameter of the valve flow of the butterfly valve; is the pressure control transfer function of the atomic layer deposition reaction chamber is the hyperparameter of the pressure of the atomic layer deposition reaction chamber; Based on the system function relationship and combined with the extended state observer theory, the extended state observer is constructed.

[0010] In some possible embodiments, the constructing the extended state observer based on the system function relationship and combined with the extended state observer theory includes: Let , , the total interference of the atomic layer deposition reaction chamber and the flow rate of the dry pump are , combined with the extended state observer theory, the system function relationship is converted into the following system state equation:

[0011] where is the actual gas pressure state of the atomic layer deposition reaction chamber the first derivative of is the trend gas pressure state of the atomic layer deposition reaction chamber the first derivative of; b is the physical relationship coefficient between the opening angle of the butterfly valve and the system state; Based on the system state equation, the operation expression of the following extended state observer is generated:

[0012] where is a non - linear function, is the first derivative of the non - linear function, is: at the gas pressure state of the atomic layer deposition reaction chamber, the observed value of the total interference of the atomic layer deposition reaction chamber and the dry pump flow rate f ; is the gain of the observed value, e is the error.

[0013] In some possible embodiments, the non - linear function satisfies the following formula:

[0014] where , , , are adjustable hyperparameters. In some possible embodiments, the non - linear function Satisfy the following formula:

[0015] Wherein, , 、 are adjustable hyperparameters.

[0016] In some possible embodiments, the extended state observer further includes: a first-order filter, and the first-order filter satisfies the following formula:

[0017] Wherein, v is a speed factor, k is a filtering factor, wherein v adjusts the step size of the attenuation of the filter at each step, and k represents the adjustment speed during the filter adjustment process.

[0018] In some possible embodiments, the extended state observer further includes: a tracking differentiator, and the tracking differentiator satisfies the following formula:

[0019] Wherein, fhan is the fastest sum control function, K is the current moment, K + 1 is the next moment, and r, h are adjustment parameters.

[0020] In a second aspect, the present application provides a gas pressure control method for an atomic layer deposition reaction chamber. The method is applied to a gas pressure control system of an atomic layer deposition reaction chamber. The gas pressure control system includes: a temperature sensor, a vacuum gauge, a programmable logic controller, a butterfly valve controller, a butterfly valve, a dry pump, and a mass flow controller. The programmable logic controller is pre-set with an extended state observer. The temperature sensor and the vacuum gauge are arranged in the atomic layer deposition reaction chamber. The method includes: Obtain the temperature change △T in the chamber collected by the temperature sensor, the gas flow change △W in the chamber collected by the mass flow controller, and the gas pressure measurement value P in the chamber collected by the vacuum gauge VG , and the gas pressure expected value P set by the preset process program SP ; Use the temperature change △T, the gas flow change △W, the gas pressure measurement value P VG and the gas pressure expected value P SP as input parameters of the extended state observer, and run the extended state observer; wherein, the extended state observer is based on the input temperature change △T, the gas flow change △W, the gas pressure measurement value P VG , and the gas pressure expected value P SPAs an observation basis, a mathematical model for determining the adjustment amount of the gas pressure in the reaction chamber is established; According to the adjustment amount of the gas pressure determined by the extended state observer, a control instruction is sent to the butterfly valve controller, so that the butterfly valve controller controls the opening angle of the butterfly valve according to the control instruction.

[0021] In a third aspect, an embodiment of the present application provides an electronic device, where the electronic device includes: a processor; and a memory storing a program; where the program includes instructions that, when executed by the processor, cause the processor to execute the gas pressure control method for an atomic layer deposition reaction chamber described in the second aspect.

[0022] In a fourth aspect, an embodiment of the present application provides a non-transitory computer-readable storage medium storing computer instructions, characterized in that the computer instructions are used to cause a computer to execute the gas pressure control method for an atomic layer deposition reaction chamber described in the second aspect.

[0023] Advantages of the present application: The present application provides a gas pressure control system and method for an atomic layer deposition reaction chamber. The gas pressure control system includes: a temperature sensor, a vacuum gauge, a programmable logic controller, a butterfly valve controller, a butterfly valve, a dry pump, and a mass flow controller. The programmable logic controller is pre-set with an extended state observer. The temperature sensor and the vacuum gauge are arranged in the atomic layer deposition reaction chamber. The programmable logic controller obtains the temperature change collected by the temperature sensor, the gas flow change collected by the mass flow controller, the gas pressure measurement value collected by the vacuum gauge, and the expected gas pressure value set by the pre-set process program. The collected data is used as the input parameters of the extended state observer. The extended state observer is run, and based on the input parameters as the observation basis, the adjustment amount of the gas pressure in the reaction chamber is determined. Then, according to the adjustment amount, a control quality is sent to the butterfly valve controller to control the opening angle of the butterfly valve.

[0024] By selecting the embodiment of the present application, factors such as the temperature change in the atomic layer deposition reaction chamber, the gas flow change, the gas pressure measurement value actually collected by the vacuum gauge, and the expected gas pressure value set by the pre-set process program are all included in the range of influencing factors for the entire gas pressure control. Through the extended state observer pre-set in the programmable logic controller, based on the input influencing factors, the corresponding gas pressure adjustment amount is determined under the influence of these influencing factors. Then, according to the gas pressure adjustment amount, the opening angle of the butterfly valve of the dry pump in the reaction chamber is controlled, which can reduce the influence of various interference items on the gas pressure adjustment accuracy, so as to achieve more accurate gas pressure control. Description of the Drawings

[0025] In the following description of exemplary embodiments in conjunction with the accompanying drawings, more details, features, and advantages of the present application are disclosed. In the drawings: Figure 1 A schematic diagram of a control principle of a prior art method for controlling the gas pressure in a reaction chamber is shown; Figure 2 A schematic diagram of a system framework of a gas pressure control system for an atomic layer deposition reaction chamber provided by an embodiment of the present application is shown; Figure 3 A schematic diagram of a process flow of a gas pressure control method for an atomic layer deposition reaction chamber provided by an embodiment of the present application is shown; Figure 4 A simplified structural diagram of a reaction chamber provided by an embodiment of the present application is shown; Figure 5 A schematic diagram of a working process of an extended state observer provided by an embodiment of the present application is shown; Figure 6 A schematic diagram of a tracking differentiator provided by an embodiment of the present application is shown; Figure 7 A schematic diagram of a system architecture of a gas pressure control system for an atomic layer deposition reaction chamber provided by an embodiment of the present application is shown; Figure 8 A structural block diagram of an exemplary electronic device capable of implementing the embodiments of the present application is shown; Description of reference numerals: 1 - Temperature sensor, 2 - Vacuum gauge, 3 - Mass flow controller, 4 - Butterfly valve controller, 5 - Dry pump, 6 - Reaction tray, 7 - Reaction tray support, 8 - Reaction chamber, 9 - Butterfly valve, 10 - Programmable logic controller, 11 - Extended state observer. Detailed implementation manners

[0026] Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although some embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Instead, these embodiments are provided to more thoroughly and completely understand the present application. It should be understood that the drawings and embodiments of the present application are only for exemplary purposes and are not used to limit the protection scope of the present application.

[0027] It should be understood that the steps recited in the method embodiments of the present application can be executed in a different order and / or in parallel. In addition, the method embodiments may include additional steps and / or omit the steps shown. The scope of the present application is not limited in this regard.

[0028] As used herein, the term "including" and its variations are open-ended, i.e., "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the following description. It should be noted that the concepts such as "first", "second", etc. mentioned in this application are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0029] It should be noted that the modification of "one" and "multiple" mentioned in this application is illustrative rather than restrictive. Those skilled in the art should understand that unless otherwise clearly specified in the context, it should be understood as "one or more".

[0030] The atomic deposition reaction chamber control method provided by the embodiments of this application is applied to the reaction chamber of atomic layer deposition. As described in the background art, this reaction chamber is used to produce semiconductors through the ALD thin film deposition technology. In this article, the space for realizing the production of semiconductors by ALD thin film deposition is called the reaction chamber. Among them, the existing gas pressure control scheme for the reaction chamber of atomic layer deposition can be as Figure 1 shown and includes the following parts: Temperature sensor 1, vacuum gauge 2, mass flow controller 3, butterfly valve controller 4, dry pump 5, reaction tray 6, reaction tray support 7, reaction chamber 8, butterfly valve 9, programmable logic controller 10.

[0031] Based on the reaction chamber system diagram as Figure 1 shown, the ALD process can include the following steps: The first step: precursor adsorption. Based on the cyclic self-limiting surface reaction, the first reaction gas is injected into the reaction chamber 8 through the mass flow controller 3, so that the first reaction gas is adsorbed on the surface of the wafer carried by the reaction tray 6. When the surface sites of the wafer are occupied, the injection of the first reaction gas is stopped through the mass flow controller 3.

[0032] The second step: blowing and purging. The blowing and purging actions are performed using an inert gas to flush away the remaining first reaction gas through the inert gas.

[0033] The third step: reaction to generate a thin film. A new second reaction gas is injected through the mass flow controller 3 to undergo a physical and chemical reaction with the first reaction gas already adsorbed on the surface of the wafer, generating the required semiconductor thin film. When the adsorbed molecules of the first reaction gas are consumed, the adsorption is stopped.

[0034] Step 4: Blow and sweep again. Perform the blowing and sweeping actions again using an inert gas to flush out the remaining second reaction gas through this inert gas.

[0035] Repeat the above four steps. By alternately injecting the first reaction gas and the second reaction gas, a thin film is deposited layer by layer until the desired thickness is reached. Among them, the chemical substance that can form a thin film on the surface of the wafer substrate through chemisorption or chemical reaction is a precursor, and this precursor is usually an organic compound or an inorganic compound containing the target element.

[0036] During the entire reaction process, the reaction chamber for atomic layer deposition often maintains a vacuum environment. However, as described in the background art, the stability of the gas pressure in the reaction chamber for atomic layer deposition is one of the key factors in the atomic layer deposition process. In the related art, a gas pressure control scheme such as Figure 1 is adopted. By setting a vacuum gauge 2 in the reaction chamber, the gas pressure in the reaction chamber 8 is detected through this vacuum gauge 2. According to the gas pressure result detected by this vacuum gauge 2, a control instruction is directly sent to the butterfly valve controller 4, and the butterfly valve controller 4 controls the valve opening angle of the butterfly valve 9 according to the received control instruction, so that the dry pump 5 connected to the butterfly valve 9 continuously pumps out the gas in the reaction chamber to maintain a relatively low pressure state.

[0037] The above gas pressure control scheme in the reaction chamber for atomic layer deposition can be understood as the following several links: Start stage: The reaction chamber is in an atmospheric pressure environment. At this time, the control module in the entire atomic layer deposition system, which can be a PLC (Programmable Logic Controller) controller, sends a fully open control instruction to the butterfly valve controller 4 to control the butterfly valve controller 4 to adopt a fully open air extraction method, adjust the opening angle of the butterfly valve 9 to the maximum, and quickly pump out the gas in the reaction chamber by the dry pump to reduce the gas pressure in the entire reaction chamber to the lowest pressure state. As a preferred implementation mode, this lowest pressure state can be 4 mTorr. mTorr is a pressure unit, which is called millitorr in Chinese, and 1 mTorr = 0.001 Torr.

[0038] Pressure control mode stage: After the reaction chamber reaches the lowest pressure state, it indicates that the reaction chamber has the initial conditions for atomic layer deposition process production. At this time, it enters the pressure control mode stage, and the atomic layer deposition system enters the working state under the pressure control mode.

[0039] Specifically, the upper computer in the atomic layer deposition system executes the set atomic layer deposition process program, and then according to the regulations of this atomic layer deposition process program, obtains the given pressure value P SP and sets the expected value of the gas pressure P SPAnd the pressure control instruction is sent to the PLC controller in the atomic layer deposition system, and then the given pressure value P is sent by the PLC controller SP And the pressure control instruction is sent to the butterfly valve controller 4. The butterfly valve controller 4 obtains the real pressure value P collected by the vacuum gauge 2 through connecting to the vacuum gauge 2 in the chamber VG , to judge the pressure of the current chamber.

[0040] If the real pressure value P VG changes from atmospheric pressure to the lowest air pressure state, the pressure control mode is turned on. At this time, the butterfly valve controller 4 turns on the adaptive pressure control mode, and according to the real pressure value P VG and the given pressure value P SP The opening angle of the butterfly valve 9 is adjusted according to the difference between them, so as to dynamically adjust the mass and flow rate of the gas in the reaction chamber, and finally realize the control of the pressure in the chamber.

[0041] Through comprehensive analysis, in the existing gas pressure control scheme in the reaction chamber of atomic layer deposition, the gas pressure measurement value collected by the vacuum gauge is directly used as the input parameter for the PLC to calculate the gas pressure control. The PLC directly calculates the data difference between the collected data by the vacuum gauge and the expected gas pressure value, and then sends a control instruction to the butterfly valve controller according to the data difference, and controls the opening angle of the butterfly valve through the control instruction.

[0042] However, in the above technical solution that directly uses the real pressure value P collected by the vacuum gauge VG During the process production, reactive gases are continuously injected, and the injected reactive gases are likely to blow the sensor of the vacuum gauge, thus causing repeated fluctuations in pressure. Any pressure change will cause the butterfly valve 9 to act frequently, affecting the air pressure control effect.

[0043] In addition, due to the large amount of gas in the chamber and the complex reaction process, new gases will be generated, resulting in a large number of pressure disturbances in the chamber. The above technical solution that directly uses the real pressure value P collected by the vacuum gauge VG has no high robustness and weak anti-interference ability, which will also have a negative impact on the air pressure control effect.

[0044] In view of this, the present application provides a gas pressure control system and method for an atomic layer deposition reaction chamber, which can accurately control the gas pressure in the atomic layer deposition reaction chamber to ensure the process quality of atomic layer deposition. Among them, in the first aspect, the gas pressure control system for the atomic layer deposition reaction chamber provided by the present application can be a software and hardware system with gas pressure control capabilities, including the execution logic at the software level and various electronic components at the hardware level. In some possible embodiments, it can be as Figure 2As shown, the gas pressure control system provided by this application, based on the existing gas pressure control solutions, includes the following parts: Temperature sensor 1, vacuum gauge 2, mass flow controller 3, butterfly valve controller 4, dry pump 5, reaction tray 6, reaction tray support 7, reaction chamber 8, butterfly valve 9, programmable logic controller 10, extended state observer 11.

[0045] Among them, the extended state observer 11 is a mathematical model preset in the programmable logic controller 10.

[0046] Based on the gas pressure control system provided in the first aspect, in the second aspect, the gas pressure control method for the atomic layer deposition reaction chamber provided by this application can be applied to any electronic device with gas pressure control capabilities, including but not limited to: personal mobile terminals, computers, servers, industrial control machines, etc. As a preferred implementation, the gas pressure control method for the atomic layer deposition reaction chamber can be applied to the gas pressure control system provided in the first aspect, specifically to the programmable logic controller in the gas pressure control system in the first aspect, that is, the programmable logic controller executes each step of the gas pressure control method provided by the embodiments of this application.

[0047] Based on the system provided in the first aspect, the method provided in the second aspect can be as Figure 3 shown and includes the following steps: S31. Obtain the temperature change △T in the chamber collected by the temperature sensor, the gas flow change △W in the chamber collected by the mass flow controller, and the gas pressure measurement value P in the chamber collected by the vacuum gauge VG , and the gas pressure expected value P set by the preset process program SP ; S32. Use the temperature change △T, the gas flow change △W, the gas pressure measurement value P VG and the gas pressure expected value P SP as the input parameters of the extended state observer, and run the extended state observer; among them, the extended state observer is a mathematical model that determines the adjustment amount of the gas pressure in the reaction chamber based on the input temperature change △T, gas flow change △W, gas pressure measurement value P VG , and the gas pressure expected value P SP as the observation basis; S33. According to the adjustment amount of the gas pressure determined by the extended state observer, send a control instruction to the butterfly valve controller so that the butterfly valve controller controls the opening angle of the butterfly valve according to the control instruction.

[0048] Compared with the conventional gas pressure control scheme of the ALD reaction chamber, the gas pressure control system provided in the embodiment of the present application obtains the temperature change collected by the temperature sensor, the gas flow change collected by the mass flow controller, the gas pressure measurement value collected by the vacuum gauge and the expected value of the gas pressure set by the preset process program through the programmable logic controller, and uses the collected data as the input parameter of the expansion state observer, runs the expansion state observer, and uses the input parameter as the observation basis to determine the adjustment amount of the gas pressure in the reaction chamber, and then sends the control mass to the butterfly valve controller according to the adjustment amount to control the opening angle of the butterfly valve.

[0049] In this way, factors such as temperature changes in the atomic layer deposition reaction chamber, gas flow changes, gas pressure measurement values ​​actually collected by the vacuum gauge, and expected gas pressure values ​​set by the preset process program are all included in the range of influencing factors of the entire gas pressure control. Through an extended state observer preset in the programmable logic controller, the extended state observer determines the corresponding gas pressure adjustment amount under the influence of these influencing factors based on the input influencing factors, and then controls the opening angle of the butterfly valve of the dry pump of the reaction chamber according to the gas pressure adjustment amount, which can reduce the influence of various interference items on the gas pressure adjustment accuracy, so as to achieve more accurate gas pressure control.

[0050] The following will describe in detail the gas pressure control system and method provided by the present application in combination with specific examples: In the gas pressure control system provided in the present application, the temperature sensor and the vacuum gauge are connected to the programmable logic controller PLC. The specific model and size of the temperature sensor and the vacuum gauge can be flexibly selected according to the actual process production conditions, and the present application does not make strict restrictions. Among them, the temperature sensor is used to obtain the temperature value in the reaction chamber, and the vacuum gauge is used to obtain the gas pressure in the reaction chamber. The temperature sensor and the vacuum gauge can send the obtained measurement results to the programmable logic controller, and the programmable logic controller runs the internal pre-written software logic based on the input temperature value and gas pressure value, and outputs the corresponding calculation results. In the embodiment of the present application, the model and size of the programmable logic controller can also be flexibly selected according to the actual process production conditions, and the present application does not make strict restrictions.

[0051] In the embodiments of the present application, the reaction chamber of atomic layer deposition can be regarded as a system. It is difficult to directly measure each state variable in this system. For example, the interference of the gas flowing into the mass flow controller on the measurement data of the vacuum gauge cannot be tested by existing measurement means. Therefore, an extended state observer is introduced in the present application. According to the input and output of the reaction chamber, this extended state observer estimates the parameters that cannot be directly measured inside the system, so as to control the butterfly valve according to the result estimated by this extended state observer. Specifically, as Figure 4 shown, the reaction chamber of the ALD atomic layer deposition system can be simplified into a cavity structure composed of an air inlet and an air outlet. By changing the flow rate of the exhaust valve (i.e., the butterfly valve of the dry pump), the stable control of the gas pressure inside the entire cavity V is realized. Then, based on the input temperature value (i.e., Figure 4 in T in ), the input gas pressure value (i.e., Figure 4 in P in ), and the input gas flow rate value (i.e., Figure 4 in W in ), combined with the output temperature value (i.e., Figure 4 in T out ), the output gas pressure value (i.e., Figure 4 in P out ), and the output gas flow rate value (i.e., Figure 4 in W out ), the true gas pressure state inside the cavity is estimated, and then the gas pressure is adjusted according to this estimated result.

[0052] In the embodiments of the present application, the extended state observer is not a hardware electronic component, but software logic pre-written in the programmable logic controller and can be run and calculated by this programmable logic controller. As the core of the gas pressure control system provided in the present application, this extended state observer estimates the state and total disturbance of the reaction system inside the reaction chamber of the entire atomic layer deposition in real time. Among them, the state of the reaction system inside this reaction chamber includes the current state and trend state of the reaction system inside this reaction chamber. This trend state is a predicted state of the system, which can be analogous to the predicted system state determined by an artificial intelligence model based on current various inputs. Among them, the total disturbance can also be called total interference, including the internal uncertainty and external interference inside this reaction chamber. Among them, the internal uncertainty includes: the acquisition error of the temperature sensor and the vacuum gauge, and the control error of the mass flow control. The external interference includes external noise signal interference.

[0053] Among them, based on Figure 4 , assuming that the volume of the reaction chamber is V, the inlet parameters of the entire reaction chamber are: the input temperature value T in , the input gas pressure value P in , the input gas flow rate value W in . Among them, if the reaction chamber is as Figure 2 shown, there are three inlet ports, and the inlet ports are respectively controlled by three corresponding mass flow controllers 3. At this time, the total system input W in =W in1 +W in2 + W in3 . The outlet parameters of the entire reaction chamber are: the output temperature value T out , the output gas pressure value P out , the output gas flow rate value W out . At this time, the total system output W out =W out1 +W out2 . Since during the process of process production, the entire reaction chamber can be regarded as a container, and the inside of this container is in a dynamic change process. At this time, there will be a certain differential relationship between the pressures and temperatures of the inlet and outlet ports. This differential relationship is the cornerstone for constructing an extended state observer.

[0054] Specifically, through the pneumatic state equation and the gas internal energy formula , the differential equation of the temperature in the cavity with respect to time shown in formula (1) below, and the differential equation of the gas pressure in the cavity with respect to time shown in formula (2) can be deduced: Equation, and the differential Equation of the gas pressure in the cavity with respect to time shown in formula (2): Formula (1) Formula (2) Among them, R is the temperature constant, m is the gas mass, T is the temperature in the chamber, P is the gas pressure in the chamber, V is the volume of the chamber, C p is the specific heat capacity in the chamber, and h is the specific enthalpy. is the specific enthalpy of the gas entering the chamber, is the specific enthalpy of the gas flowing out of the chamber. Q is the heat exchange value, is the first derivative of the heat exchange value. Among them, specific enthalpy is a commonly used physical quantity in thermodynamics, specifically referring to the total energy per unit mass of a substance that includes internal energy and pressure potential energy. The heat exchange value refers to the amount of heat transferred between objects during the heat transfer process and is used to measure the heat transfer rate between objects. W in is the total intake air volume of the reaction chamber, W out is the total exhaust gas volume of the reaction chamber, that is, the total pumping volume corresponding to the dry pump.

[0055] After constructing the system model of the above reaction chamber, transfer functions can be constructed for each controlled object in the gas pressure control process. Among them, the controlled objects included in the gas pressure control process are: butterfly valve position, valve interception area of the butterfly valve, valve flow rate of the butterfly valve, and gas pressure in the chamber. The transfer functions specifically constructed based on each controlled object are as follows: 1) Construct the butterfly valve position control transfer function based on the following formula (3) : Formula (3) Among them, is the quantity of the actual angle of the butterfly valve valve in the frequency domain s, is the quantity of the desired opening angle of the butterfly valve valve in the frequency domain s, is the system gain of the butterfly valve control system, which is used to represent the gain effect of the output signal on the input signal. Among them, is the time constant of the first-order control system.

[0056] 2) Construct the butterfly valve valve interception area control transfer function based on the following formula (4) : Formula (4) Among them, is the quantity of the actual angle of the butterfly valve valve in the frequency domain s, is the valve interception area of the butterfly valve, represents the transfer function of the cross-sectional area control system, which represents the dynamic response characteristics of the input and output in the frequency domain representation. The stability, oscillation, and response speed of the system can be analyzed, and it is also a linear coefficient.

[0057] 3) Construct the butterfly valve valve flow rate control transfer function based on the following formula (5) : Formula (5) Among them, is the valve flow rate of the butterfly valve, is the flow coefficient, which is related to the physical structure and shape of the valve, They are respectively: the gas density of gas X and the gas density of gas Y. is the gain of the pressure control system, that is, the gain relationship between flow rate and pressure.

[0058] such as Figure 4 In the internal system of the reaction chamber shown, the pumping flow rate of the dry pump can be simplified to the mathematical model shown in the following formula (6) W out : Formula (6) Wherein, represents the pump flow coefficient, A represents the valve interception area of the butterfly valve connected to the dry pump, represents the pressure in the chamber, represents the pressure at the pump outlet. Since the dry pump is directly connected to the tail gas treatment device, it can be equivalent to atmospheric pressure, is the gas density.

[0059] 4) Substituting the above formula (6) into formula (2) can construct the pressure control transfer function of the atomic layer deposition reaction chamber as the following formula (7) : Formula (7) Wherein, (s) is the quantity of the valve flow rate of the butterfly valve in the frequency domain s, is the quantity of the pressure in the reaction layer deposition reaction chamber in the frequency domain s, k w satisfies the following formula (7-1): Formula (7-1) k q satisfies the following formula (7-2): Formula (7-2) Wherein, k w is the pole of the pressure system, which determines the response speed of the entire system.

[0060] After combining the above formulas (3) to (7), formula (7-1), and formula (7-2), the system function relationship with the desired opening angle of the butterfly valve as the independent variable and the gas pressure in the atomic layer deposition reaction chamber as the dependent variable can be constructed. This system function relationship satisfies the following formulas (8) and (9): Formula (8) Formula (9) Wherein, pis the gas pressure in the atomic layer deposition reaction chamber, is p the first derivative of, is the second derivative of p, is the quantity of the gas pressure in the atomic layer deposition reaction chamber in the frequency domain, where, generally refers to the constant in the second-order system, which is used to characterize the performance and characteristics of this second-order system.

[0061] Based on the system function relationships of the above formulas (8) and (9), combined with the extended state observer theory, an extended state observer is constructed. The total disturbance and the state of the system of formulas (8) and (9) are observed by the extended state observer.

[0062] Specifically, in the extended state observer theory, for the nonlinear system: , is the gas pressure state of the system, u is the valve opening angle of the butterfly valve, and d is the total disturbance of the internal uncertainty and external disturbance. Specifically, it can be as Figure 5 shown, based on the above formula (3) butterfly valve position control transfer function , formula (4) butterfly valve valve interception area control transfer function , formula (5) butterfly valve valve flow control transfer function , the mathematical model of the pumping flow rate of the dry pump in formula (6) is introduced W out , combined with the pressure control transfer function of the atomic layer deposition reaction chamber corresponding to formula (7) , the expected opening angle of the butterfly valve of the reaction chamber is estimated by the extended state observer provided in this application and the gas pressure P(y) in the reaction chamber, and the internal and external disturbances existing in the entire system of the reaction chamber are estimated. During the process, according to the above theory, the above formulas (8) and (9) are deformed: Let , , the total disturbance of the atomic layer deposition reaction chamber and the flow rate of the dry pump are , combined with the above extended state observer theory, the system function relationships of the above formulas (8) and (9) are converted into the following system state equation, specifically as formula (10) below: Formula (10) where, is the actual gas pressure state of the atomic layer deposition reaction chamber the first derivative of, is the trend gas pressure state of the atomic layer deposition reaction chamber The first derivative; b is the physical relationship coefficient between the opening angle of the butterfly valve and the system state; among them, the trend gas pressure state is the estimated value of the gas pressure state observed by the extended state observer.

[0063] Based on the valve with the butterfly valve as the controlled object, assume Then, based on the system state equation, the operation expression of the following extended state observer is generated, as shown in the following formula (11): Formula (11) Among them, is a non-linear function, specifically a compensation function constructed according to the error, is the first derivative of the non-linear function, is the gas pressure value of the system of the entire atomic layer deposition reaction chamber, specifically the gas pressure state in the atomic layer deposition reaction chamber Under this condition, the total interference of the atomic layer deposition reaction chamber and the observed value of the dry pump flow f ; is the gain of the observed value, e is the error, among which, e is the specific state estimation error.

[0064] As an implementation method, the above non-linear function satisfies the following formula (12): Formula (12) Among them, , , , are adjustable hyperparameters.

[0065] As an implementation method, the extended state observer provided in this application is a non-linear state observer. In order to improve the performance of this extended state observer and enable the non-linear function to be modified with the state error e to ensure the system performance of the extended state observer, the above non-linear function is modified to the following formula (13): Formula (13) Among them, , , are adjustable hyperparameters. Among them, the gain of the observed value determines the estimation speed of the extended state observer for the observed system. The larger the gain value, the faster the estimation speed of the extended state observer. The value of the gain of the observed value of the extended state observer is directly related to the stability of the extended state observer.

[0066] It can be seen from Equation (13) that as the error e varies, the value of the corresponding nonlinear function fal also varies, thereby modifying the gain of the extended state observer. When the error is small, the gain of the corresponding extended state observer will also be small. In this way, it can be ensured that the extended state observer has good stability. When a large disturbance occurs, the error will increase, and accordingly, the gain of the extended state observer will also increase, which can ensure the estimation performance of the extended state observer and improve the estimation speed of the extended state observer, so as to realize that the extended state observer adaptively adjusts the corresponding gain according to different errors, and can achieve the effect of "large error, large gain; small error, small gain" for the gain.

[0067] In the actual gas pressure control process, due to certain measurement errors and noises in measurement devices such as temperature sensors and vacuum gauges, these noises will enter the extended state observer along with the measurement data, generating self-interference to the extended state observer. Or, if the initial values of some hyperparameters of the extended state observer are not reasonably selected, it will lead to self-interference in the extended state observer. To ensure that the extended state observer has better resistance to the above self-interference. As an implementation manner, a first-order filter is introduced into the extended state observer, and the self-interference noise existing in the estimation process is filtered through this first-order filter. Among them, this first-order filter satisfies the following Equation (14): Equation (14) Wherein, v is the speed factor and k is the filtering factor. Among them, v adjusts the step size of the attenuation of the filter at each step, and k represents the adjustment speed during the filter adjustment process. The specific values can be adjusted according to the actual process production requirements, and this application does not make strict limitations. By appropriately adjusting the values of the speed factor and the filtering factor, a filter with fast tracking speed and excellent filtering effect can be obtained. It can be seen from the above Equation (14) that the first-order filtering function of the nonlinear function fal function will exhibit different tracking capabilities, that is, this first-order filtering function can accurately follow the change of the signal and give the corresponding system state of the reaction chamber, so as to achieve the balance between filtering random noise and the tracking speed of the measurement signal.

[0068] Finally, to ensure that the target signal can have a good process and quickly calculate the differential value of the input signal, a tracking differentiator can be set in the extended state observer, and the input target signal is corrected through this tracking differentiator. Specifically, this tracking differentiator can track the change of the input signal in real time. Whether the input signal changes slowly or rapidly, it can accurately track the trajectory of the signal change, so that the output signal is synchronized with the input signal in time and the amplitudes are close. In addition, through this tracking differentiator, specific differential calculations are performed to obtain the derivative information of the input signal, and more accurate estimation results can be obtained through the derivative estimation using this derivative information.

[0069] Specifically, the structure of the tracking differentiator can be as Figure 6 shown. Based on the input control signal , in the application scenario of the embodiments of the present application, it can be the expected value of the gas pressure set for the process program P SP . Then, based on this control signal , the feedback value and the approximate differential value corresponding to the control signal are calculated. Among them, is the feedback value of the control signal ; is the approximate differential value of the control signal .

[0070] Based on this, as an implementation manner, the tracking differentiator provided by the embodiments of the present application satisfies the following formula (15): Formula (15) where fhan is the fastest sum control function for calculating the state update of the tracking differentiator, K is the current moment, K + 1 is the next moment, r and h are adjustment parameters, is the control signal of the tracking differentiator at the current moment. In this way, by reasonably adjusting the adjustment parameters r and h in the formula, the fhan function can enable the tracking differentiator to quickly track the input signal. When the error is large, the function outputs a larger value to accelerate the tracking speed.

[0071] Based on the calculation formulas of the respective sub-units of the extended state observer as described above, the processing flow block diagram of the gas pressure control system of the atomic layer deposition reaction chamber provided by the embodiments of the present application can be as Figure 7 shown, including the following processes: Obtain the gas pressure measurement value P collected by the vacuum gauge VG , and at the same time obtain the temperature value collected by the temperature sensor. Through the first-order filter shown in the above formula (14), the noise existing in the collection processes of the vacuum gauge and the temperature sensor is suppressed. In this way, when there are temperature fluctuations and external disturbances caused by sudden gas intake actions, the sudden disturbances can be filtered out by this first-order filter to obtain a stable and reliable pressure value feedback.

[0072] Synchronously, obtain the expected value of the gas pressure set by the control program running on the host computer P sp , as the input of the entire gas pressure control system. Through the tracking differentiator based on this expected value of the gas pressure P sp , determine P sp the corresponding feedback value (analogous to Figure 6 in ), P sp The corresponding approximate differential value (analogous to Figure 6 in ). To improve the response speed of the system during the control process, an extended state observer is adopted, and the differential value of the gas pressure change in the chamber is used as the feedback quantity, which can sensitively respond to the gas pressure change in the chamber.

[0073] Furthermore, the processed signal calculates the feedback quantity during the entire gas pressure control process through the extended state observer. While the extended observer obtains a stable control feedback quantity, it realizes the prediction of the trend of the change in the control quantity. Specifically, by adding the estimated feedback quantity output by the extended state observer to the feedback value corresponding to the gas pressure expected value, and adding the result (estimated differential quantity) output by the extended state observer to the approximate differential value corresponding to the gas pressure expected value. Since it is specifically negative feedback control, although it is addition, it is actually subtraction, and it is judged through the error between the observed value and the control quantity to form a gas pressure negative feedback control system. Among them, as Figure 2 shown, the entire reaction chamber includes two butterfly valves in total. Through the parallel control of the two butterfly valves, the signal is uniformly used as the input of the two butterfly valves, which can avoid separately controlling the two butterfly valves independently, and phenomena such as interference, oscillation, and overshoot between the two butterfly valves, affecting the control effect, so that the gas pressure control cannot be realized.

[0074] Due to the process complexity in the reaction chamber of the entire atomic layer deposition system, there may be more disturbances during the control process. In the embodiment of the present application, by obtaining the temperature changes collected by the temperature sensor at different times ( time, time), and the gas flow rate changes in the reaction chamber collected by the mass flow controller , the temperature change and gas flow rate change will cause local gas pressure changes accompanied by complex gas flow during the process. By using the first-order filter provided in the present application, the pressure feedback value in the gas pressure control process can be effectively filtered, and most random disturbances can be effectively filtered out, making the finally calculated adjustment amount more accurate and further improving the gas pressure control accuracy.

[0075] In addition, during the execution of step S33, since the atomic layer deposition system needs to maintain the stability of the current gas pressure measurement value P VG in the reaction chamber during the process production, or in a relatively stable state, but due to the complexity of the entire process, factors such as temperature change and gas flow rate change will be reflected in P VGIn view of the changes, in the embodiments of the present application, through the first-order filter in the expansion state observer, P VG the interference amount existing in can be filtered out, and then a feedback value is generated and fed back to the input end of the entire gas pressure control system. Through this feedback value, combined with the expected gas pressure set by the process program P SP , the data difference between the two is calculated. This data difference is the adjustment amount of the gas pressure. By sending a corresponding control instruction to the butterfly valve controller through this adjustment amount, it helps to more accurately control the butterfly valve controller to control the butterfly valve to adjust the opening angle, and finally realizes the precise regulation of the gas pressure in the reaction chamber, has stronger robustness and stronger anti-interference ability, and has a strong reaction speed, and can achieve fast response to meet the dynamic stability of the process requirements.

[0076] The names of the messages or information exchanged between multiple devices in the embodiments of the present application are only for illustrative purposes and are not used to limit the scope of these messages or information.

[0077] In a third aspect, an exemplary embodiment of the present application further provides an electronic device, including: at least one processor; and a memory communicatively connected to the at least one processor. The memory stores a computer program that can be executed by the at least one processor, and when the computer program is executed by the at least one processor, it is used to cause the electronic device to execute the method according to the embodiments of the present application.

[0078] An exemplary embodiment of the present application further provides a non-transitory computer-readable storage medium storing a computer program, where the computer program is used to cause a computer to execute the method according to the embodiments of the present application when executed by a processor of the computer.

[0079] An exemplary embodiment of the present application further provides a computer program product, including a computer program, where the computer program is used to cause a computer to execute the method according to the embodiments of the present application when executed by a processor of the computer.

[0080] Reference Figure 8, the structural block diagram of the electronic device 800 that can be used as the server or client of the present application will now be described. It is an example of a hardware device that can be applied to various aspects of the present application. The electronic device is intended to represent various forms of digital electronic computer devices, such as, laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as, personal digital processors, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present application described and / or claimed herein.

[0081] As Figure 8 shown, the electronic device 800 includes a computing unit 801, which can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM 802) or the computer program loaded from the storage unit 808 into the random access memory (RAM 803). In the RAM 803, various programs and data required for the operation of the electronic device 800 can also be stored. The computing unit 801, the ROM 802, and the RAM 803 are connected to each other through a bus 804. The input / output interface (I / O interface 805) is also connected to the bus 804.

[0082] Multiple components in the electronic device 800 are connected to the I / O interface 805, including: an input unit 806, an output unit 807, a storage unit 808, and a communication unit 809. The input unit 806 can be any type of device that can input information into the electronic device 800. The input unit 806 can receive input digital or character information, and generate key signal inputs related to the user settings and / or function controls of the electronic device. The output unit 807 can be any type of device that can present information, and can include but is not limited to a display, a speaker, a video / audio output terminal, a vibrator, and / or a printer. The storage unit 808 can include but is not limited to a magnetic disk, an optical disk. The communication unit 809 allows the electronic device 800 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks, and can include but is not limited to a modem, a network card, an infrared communication device, a wireless communication transceiver, and / or a chipset, such as a Bluetooth™ device, a WiFi device, a WiMax device, a cellular communication device, and / or the like.

[0083] The computing unit 801 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 801 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 801 executes the various methods and processes described above. For example, in some embodiments, the gas pressure control method of the foregoing atomic layer deposition reaction chamber can be implemented as a computer software program tangibly embodied in a machine-readable medium, such as the storage unit 808. In some embodiments, part or all of the computer program can be loaded and / or installed onto the electronic device 800 via the ROM 802 and / or the communication unit 809. In some embodiments, the computing unit 801 can be configured to execute the foregoing gas pressure control method of the atomic layer deposition reaction chamber in any other suitable manner (e.g., by means of firmware).

[0084] The program code for implementing the method of the present application can be written in any combination of one or more programming languages. These program codes can be provided to a processor or controller of a general-purpose computer, a special-purpose computer, or other programmable data processing device, such that when the program codes are executed by the processor or controller, the functions / operations specified in the flowchart and / or block diagram are implemented. The program code can be executed entirely on the machine, partially on the machine, as an independent software package partially on the machine and partially on a remote machine, or entirely on a remote machine or server.

[0085] In the context of the present application, a machine-readable medium can be a tangible medium that can contain or store a program for use by or in connection with an instruction execution system, system, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can include, but is not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, system, or device, or any suitable combination of the foregoing. More specific examples of a machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0086] As used in this application, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, apparatus, and / or device (e.g., a magnetic disk, an optical disk, a memory, a programmable logic device (PLD)) used to provide machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal used to provide machine instructions and / or data to a programmable processor.

[0087] For purposes of providing an interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the computer. Other kinds of devices can also be used to provide for interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic, speech, or tactile input).

[0088] The systems and techniques described herein can be implemented in a computing system that includes a back-end component (e.g., as a data server), or a computing system that includes a middleware component (e.g., an application server), or a computing system that includes a front-end component (e.g., a user computer having a graphical user interface or a web browser through which the user can interact with an implementation of the systems and techniques described herein), or in a computing system that includes any combination of such back-end, middleware, or front-end components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), and the Internet.

[0089] A computer system can include a client and a server. The client and server are generally remote from each other and typically interact through a communication network. The client-server relationship is created by computer programs running on the respective computers and having a client-server relationship to each other.

Claims

1. A gas pressure control system for an atomic layer deposition reaction chamber, characterized in that: The gas pressure control system comprises: a temperature sensor, a vacuum gauge, a programmable logic controller, a butterfly valve controller, a butterfly valve, a dry pump, and a mass flow controller. The programmable logic controller is pre-installed with an execution logic of an expansion state observer. The temperature sensor and the vacuum gauge are arranged in the atomic layer deposition reaction chamber. The programmable logic controller is used to: Obtain the temperature change ΔT in the chamber collected by the temperature sensor, the gas flow change ΔW in the chamber collected by the mass flow controller, and the gas pressure measurement value P in the chamber collected by the vacuum gauge VG , preset the expected value of gas pressure P set by the process program SP ; The temperature change ΔT, the gas flow change ΔW, and the gas pressure measurement value P VG And the expected value of the gas pressure P SP As input parameters of the expansion state observer, the expansion state observer is run; wherein the expansion state observer is based on the input temperature change △T, the gas flow change △W, the gas pressure measurement value P VG , the expected value of the gas pressure P SP A mathematical model for determining the amount of adjustment of the gas pressure in the reaction chamber as an observation basis; According to the adjustment amount of the gas pressure determined by the expansion state observer, a control instruction is sent to the butterfly valve controller, so that the butterfly valve controller controls the opening angle of the butterfly valve according to the control instruction.

2. The gas pressure control system according to claim 1, characterized in that: The extended state observer is constructed in advance in the following way: A system function relationship is constructed with the expected opening angle of the butterfly valve as the independent variable and the gas pressure in the atomic layer deposition reaction chamber as the dependent variable. The system function relationship satisfies the following formula: in, p is the gas pressure in the atomic layer deposition reaction chamber, for p The first derivative of for p The second-order derivative of is the gas pressure in the atomic layer deposition reaction chamber in the frequency domain; is the expected opening angle of the butterfly valve, is the actual opening angle of the butterfly valve in the frequency domain; is the position control transfer function of the butterfly valve, is the hyperparameter of the butterfly valve position; is the valve interception area control transfer function of the butterfly valve, is a hyperparameter of the valve interception area of ​​the butterfly valve; is the valve flow control transfer function of the butterfly valve, is a hyperparameter of the valve flow rate of the butterfly valve; is the pressure control transfer function of the atomic layer deposition reaction chamber, is a hyperparameter of the pressure of the atomic layer deposition reaction chamber; Based on the system function relationship and combined with the extended state observer theory, the extended state observer is constructed.

3. The gas pressure control system according to claim 2, characterized in that: Based on the system function relationship and in combination with the extended state observer theory, the extended state observer is constructed, including: set up , , the sum of the interference of the atomic layer deposition reaction chamber and the flow rate of the dry pump is , combined with the extended state observer theory, the system function relationship is converted into the following system state equation: in, is the actual gas pressure state of the atomic layer deposition reaction chamber The first derivative of Trend gas pressure state for the atomic layer deposition reaction chamber b is the physical relationship coefficient between the opening angle of the butterfly valve and the system state; Based on the system state equation, the following extended state observer operation expression is generated: in, is a nonlinear function, is the first-order derivative of the nonlinear function, The gas pressure state in the atomic layer deposition reaction chamber is: The sum of the disturbances in the atomic layer deposition reaction chamber and the dry pump flow rate f Observed value of is the gain of the observation value, and e is the error.

4. The gas pressure control system according to claim 3, characterized in that: The nonlinear function Satisfies the following formula: in, , , , is a tunable hyperparameter.

5. The gas pressure control system according to claim 3, characterized in that: The nonlinear function Satisfies the following formula: in, , , is a tunable hyperparameter.

6. The gas pressure control system according to claim 4 or 5, characterized in that: The extended state observer further includes: a first-order filter, and the first-order filter satisfies the following formula: Among them, v is the speed factor, k is the filter factor, where v adjusts the step size of each step of filter attenuation, and k represents the adjustment speed during the filter adjustment process.

7. The gas pressure control system according to claim 3, characterized in that: The extended state observer further includes a tracking differentiator, which satisfies the following formula: Among them, fhan is the fastest sum control function, K is the current moment, K+1 is the next moment, r and h are adjustment parameters, is the control signal input to the tracking differentiator at the current moment.

8. A method for controlling gas pressure in an atomic layer deposition reaction chamber, characterized in that: The method is applied to a gas pressure control system of an atomic layer deposition reaction chamber, the gas pressure control system comprising: a temperature sensor, a vacuum gauge, a programmable logic controller, a butterfly valve controller, a butterfly valve, a dry pump, and a mass flow controller, the programmable logic controller is pre-installed with an expansion state observer, the temperature sensor and the vacuum gauge are arranged in the atomic layer deposition reaction chamber, and the method comprises: Obtain the temperature change ΔT in the chamber collected by the temperature sensor, the gas flow change ΔW in the chamber collected by the mass flow controller, and the gas pressure measurement value P in the chamber collected by the vacuum gauge VG , preset the expected value of gas pressure P set by the process program SP ; The temperature change ΔT, the gas flow change ΔW, and the gas pressure measurement value P VG And the expected value of the gas pressure P SP As input parameters of the expansion state observer, the expansion state observer is run; wherein the expansion state observer is based on the input temperature change △T, the gas flow change △W, the gas pressure measurement value P VG , the expected value of the gas pressure P SP A mathematical model for determining the amount of adjustment of the gas pressure in the reaction chamber as an observation basis; According to the adjustment amount of the gas pressure determined by the expansion state observer, a control instruction is sent to the butterfly valve controller, so that the butterfly valve controller controls the opening angle of the butterfly valve according to the control instruction.

9. An electronic device, characterized in that: The electronic device comprises: a processor and a memory storing a program; wherein the program comprises instructions, which, when executed by the processor, cause the processor to perform the method according to claim 8.

10. A non-transitory computer-readable storage medium storing computer instructions, characterized in that: The computer instructions are used to make a computer execute the method according to claim 8.

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