Device and Method for Measuring Diffusion Length of Photo-generated Carriers in Photocatalytic Materials Based on KPFM

By improving the optical path design and introducing a dual stop regulation and precise positioning system, the accuracy of photogenerated carrier measurement of photocatalytic materials in the prior art is solved, and the microscale characterization of nanophotocatalytic materials is realized, providing quantitative analysis of carrier diffusion length, and guiding the optimization of photocatalysts.

CN120064924BActive Publication Date: 2025-07-18SOUTH CHINA UNIV OF TECH
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Patent Information

Application Number
CN202510541514.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-04-28
Publication Date
2025-07-18
Estimated Expiration
2045-04-28

AI Technical Summary

Technical Problem

In the prior art, the photogenerated carrier measurement method of photocatalytic materials based on AFM cannot accurately control the illumination area, quantitatively determine the relationship between the illumination intensity and the carrier separation depth, and cannot adapt to the characterization needs of nanoscale photocatalysts.

Method used

The photogenerated carrier diffusion length measurement device based on KPFM is used to design a special sample clamping device and a shared positioning system to control the spot size and position. Combined with the double-layer aperture assembly and micro-displacement platform, backlight testing is carried out to quantitatively study the diffusion direction and distance of carriers.

Benefits of technology

The microscale characterization of nanophotocatalytic materials is realized, and quantitative analysis of carrier diffusion length is provided, which provides theoretical guidance for the coating thickness and light intensity setting of the photocatalyst, which improves the accuracy and pertinence of the experiment.

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Abstract

The present invention discloses a device and method for measuring the diffusion length of photo-generated carriers in a photocatalytic material based on KPFM. The device sequentially includes a coordinate sample stage support, a double-layer diaphragm assembly, a micro-displacement platform, an optical fiber fixing plate, and a base from top to bottom. The method includes driving an AFM probe to a test area, using KPFM to measure the first potential distribution map on the surface of a sample to be measured under the condition of no light illumination; turning on an optical fiber light source to apply light illumination to the back surface of the sample to be measured through the double-layer diaphragm assembly, and synchronously recording the second potential distribution map on the surface of the sample to be measured under the condition of light illumination; calculating the diffusion length of photo-generated carriers according to the first potential distribution map and the second potential distribution map. By improving the optical path design, introducing double-diaphragm regulation, and a precise positioning system, the present invention realizes the quantitative analysis of the carrier diffusion length under the condition of backside light illumination, and provides a reliable microscopic scale characterization means for the performance optimization of nano-photocatalytic materials.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular, to an apparatus and method for measuring the diffusion length of photo-generated carriers of a photocatalytic material based on KPFM. Background Art

[0002] Two-dimensional semiconductor materials have important applications in the fields of photocatalysis and new energy, and their performance is closely related to the separation and migration efficiency of photo-generated carriers. In the prior art, Kelvin probe force microscopy (KPFM), a surface photovoltage characterization method based on atomic force microscopy (AFM), has been widely used for the analysis of carrier behavior at the micro-nano scale because it can be tested in an in-situ environment, close to the real working environment of the material. However, due to the structural problems of existing instruments, the light application method mostly uses side illumination, which has the following defects: 1) It is difficult to accurately control the illumination area, and the scattering and reflection of light cause a large deviation between the actual illumination area and the target area, affecting the accuracy of experimental data; 2) It is impossible to quantitatively measure the relationship between the illumination intensity and the carrier separation depth, making it difficult to guide the thickness optimization of photocatalytic materials; 3) Since light is applied from the side, the thickness and volume of the tested sample must be large enough to receive enough photons. However, the thickness value of two-dimensional semiconductor materials is in the nanometer size, and obviously, enough photons cannot be obtained through side illumination. Therefore, side illumination is currently only used to characterize the qualitative aggregation of photo-responsive carriers of micron-sized photocatalysts on micron-sized volumes, and it is impossible to obtain carrier behavior information at the sub-micron scale, making it difficult to meet the characterization requirements of nano-sized photocatalysts. Summary of the Invention

[0003] In order to solve at least one of the above-mentioned technical problems, the present invention provides an apparatus and method for measuring the diffusion length of photo-generated carriers of a photocatalytic material based on KPFM.

[0004] In a first aspect, the present invention provides an apparatus for measuring the diffusion length of photo-generated carriers of a photocatalytic material based on KPFM, the apparatus comprising:

[0005] A coordinate sample stage holder, provided on the top of the sample stage frame, for fixing a coordinate copper mesh covered with a single layer of graphene and marking the position of the sample to be tested;

[0006] A double-layer aperture assembly, provided below the coordinate sample stage holder, including an upper aperture and a lower aperture, for adjusting the size and position of the light spot by adjusting the stagger of the double-layer aperture holes;

[0007] A micro-displacement platform, provided on the lower surface of the lower aperture, for calibrating the position of the sample to be tested and the position of the light spot;

[0008] An optical fiber fixing plate is provided below the micro-displacement platform assembly and is used to fix one end of the optical fiber, so that the direction of light is perpendicular to the plane where the aperture is located, thereby determining the irradiation area of the light spot on the sample after passing through the aperture hole;

[0009] A base is provided below the optical fiber fixing plate, and a common positioning system is integrated inside; the common positioning system is used for synchronous positioning between the scanning electron microscope and the atomic force microscope;

[0010] Among them, the coordinate sample stage holder, the micro-displacement platform assembly, the optical fiber fixing plate, and the base are sequentially connected by an aperture holder.

[0011] Preferably, the upper aperture is fixed on the aperture holder, and the lower aperture is arranged on the micro-displacement platform.

[0012] Preferably, the lower aperture is moved within a two-dimensional plane through the micro-displacement platform, and the moving range is (-5, +5) mm, and the spot size adjustment range is (1, 100) μm.

[0013] Preferably, the coordinate copper mesh and the coordinate sample stage holder are fixed by a detachable card slot.

[0014] Preferably, the aperture holder can be lifted and lowered in the vertical direction to adapt to the requirements of different thicknesses of the sample to be measured and different sizes of spot focusing.

[0015] Preferably, the common positioning system includes a coordinate marking module and an image synchronization module;

[0016] The coordinate marking module is used to ensure the unity of the coordinate reference of the SEM and the AFM;

[0017] The image synchronization module is used to collect SEM images and AFM images, and align the SEM images and AFM images at the pixel level through a feature matching algorithm.

[0018] In a second aspect, the present invention provides a method for measuring the diffusion length of photo-generated carriers of a photocatalytic material based on KPFM, which is applied to the device for measuring the diffusion length of photo-generated carriers of a photocatalytic material based on KPFM according to any one of the first aspects. The method includes:

[0019] Disperse the sample to be measured on the surface of the coordinate copper mesh, obtain an SEM image through the SEM, and record the marking coordinates of the target test area relative to the positioning marking points in the common positioning system;

[0020] Adjust the double-layer aperture assembly according to the marking coordinates, change the staggered area of the double-layer aperture holes to match the size of the target test area; synchronously adjust the micro-displacement platform assembly to laterally move the coordinate sample stage holder to pre-align the light spot with the target test area;

[0021] Align the SEM image with the optical image of the target test area at the pixel level through a shared positioning system, and fine-tune the position of the light spot through the micro-displacement platform component until the coincidence error between the light spot and the target test area is within the preset error.

[0022] Drive the AFM probe to the target test area, and measure the first potential distribution map of the surface of the sample to be measured using KPFM under the condition of no light; turn on the fiber optic light source, apply a preset light intensity to the back of the sample to be measured through the double-layer aperture component, and synchronously record the second potential distribution map of the surface of the sample to be measured under the light condition; wherein, the test ranges of the first potential distribution map and the second potential distribution map are the same, and both are larger than the area irradiated by the light spot.

[0023] Calculate the diffusion length of photo-generated carriers according to the first potential distribution map and the second potential distribution map.

[0024] Preferably, the calculating the diffusion length of photo-generated carriers according to the first potential distribution map and the second potential distribution map includes:

[0025] Perform matrix subtraction on the second potential distribution map and the first potential distribution map to obtain a third potential distribution map.

[0026] Perform binarization processing on the third potential distribution map to determine the background area and the annular area different from the background area.

[0027] Calculate the maximum width and the average width between the background area and the annular area; use the maximum width as the maximum diffusion distance of carriers, and use the average width as the average diffusion distance of carriers.

[0028] Preferably, after obtaining the third potential distribution map, it further includes:

[0029] Identify the potential value of the area corresponding to the sample in the third potential distribution map, and judge the type of carriers generated during the photocatalyst light response according to the positive and negative of the potential value, including:

[0030] When the potential value is positive, determine that the carrier type is a hole.

[0031] When the potential value is negative, determine that the carrier type is an electron.

[0032] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0033] The present invention adds the method of applying light to the bottom surface and performing tests on the front surface. By designing a special sample clamping device, the regulation of the spot size and position is achieved. The surface photovoltage and current of micro-nano photocatalysts with specific compositions and thicknesses before and after illumination are studied by using the sample positioning system shared by a scanning electron microscope and an atomic force microscope. By controlling and monitoring the corresponding relationship between the test area and the spot illumination area in terms of position, the diffusion direction and distance of carriers in the photocatalyst under backside illumination are quantitatively studied. In addition, this method can also determine the maximum depth at which a certain intensity of illumination can excite the effective separation of carriers by measuring the change in the surface potential on the backside of thin-film photocatalysts with different thicknesses, thereby providing theoretical guidance for the setting of the coating thickness and illumination intensity of the photocatalyst. The present invention realizes the quantitative analysis of the carrier diffusion length under backside illumination conditions by improving the optical path design, introducing double-aperture regulation, and a precise positioning system, providing a reliable microscopic scale characterization means for the performance optimization of nano-photocatalytic materials.

[0034] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory, and do not limit the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the background art, the following will describe the drawings required to be used in the embodiments of the present invention or the background art.

[0036] The drawings herein are incorporated into the specification and form a part of this specification. These drawings show embodiments consistent with the present disclosure and, together with the specification, are used to illustrate the technical solutions of the present disclosure.

[0037] Figure 1 Schematic structural diagram of a device for measuring the diffusion length of photo-generated carriers in a photocatalytic material based on KPFM provided by an embodiment of the present invention;

[0038] Figure 2 Schematic flowchart of a method for measuring the diffusion length of photo-generated carriers in a photocatalytic material based on KPFM provided by an embodiment of the present invention;

[0039] Figure 3 For Figure 2 Schematic flowchart of the sub-steps of step S50 in

[0040] Figure 4 Schematic principle diagram of obtaining a potential distribution map provided by an embodiment of the present invention;

[0041] Figure 5 Schematic principle diagram of subtracting the potential distribution maps provided by an embodiment of the present invention;

[0042] Figure 6Schematic diagram showing the relationship between diffusion length and light intensity provided by the embodiments of the present invention. Detailed implementation manners

[0043] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0044] The terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally further includes steps or units not listed, or optionally further includes other steps or units inherent to these processes, methods, products or devices.

[0045] Referring to "embodiments" herein means that a specific feature, structure or characteristic described in connection with the embodiments can be included in at least one embodiment of the present invention. The phrase appears at various places in the specification and does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art will explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0046] Photocatalytic and photovoltaic materials have important applications in the fields of environmental protection and new energy development. Their reaction processes involve steps such as light absorption, separation of photo-generated carriers, migration of carriers, and reactions on the interface. Since the separation and migration of carriers occur at the micro-nano scale, in order to better study the reaction mechanism, it is necessary to explore the separation and transport processes of photo-generated carriers in such materials at the nano level. Based on the surface photovoltage characterization technology of AFM, the change in the spatial distribution of the photovoltage on the material surface before and after illumination can be intuitively characterized at the micro-nano scale in a quasi-in-situ state, and it has gradually become a common means for characterizing photocatalysts. Its basic principle is to use the distribution of the surface potential values of individual catalyst nanoparticles before and after illumination to infer the regions where charges and holes are enriched, and to evaluate the distribution density of carriers according to the magnitude of the potential difference in different regions. This method provides an idea for solving the problem of characterizing the separation of photo-generated carriers on micro-nano scale catalysts.

[0047] At present, almost all the light application methods for the characterization method of carrier spatial distribution based on AFM apply light from the side or obliquely above. This method can characterize the carrier behavior on the illuminated surface of the photocatalyst. However, due to the scattering and reflection of light in the experiment, the actual illumination area cannot be effectively controlled, and the potential and carrier behavior on the backlight side during illumination cannot be studied. Therefore, the present invention mainly adopts the method of applying light from the bottom surface and performing tests on the front surface. By designing a special sample clamping device, the size and position of the light spot are regulated. The surface photovoltage and current of the micro-nano photocatalyst with a specific composition and thickness are studied before and after illumination by using the shared sample positioning system of the scanning electron microscope-atomic force microscope. By controlling and monitoring the corresponding relationship between the test area and the light spot irradiation area in terms of position, the diffusion direction and distance of carriers in the photocatalyst under the condition of backlight illumination are quantitatively studied.

[0048] In addition, this method can also determine the maximum depth at which a certain intensity of light can excite the effective separation of carriers by measuring the change in the surface potential on the back of the thin-layer photocatalyst with different thicknesses, thereby providing theoretical guidance for the setting of the coating thickness and light intensity of the photocatalyst. In previous photocatalysis research, the measurement of physical quantities such as the carrier separation distance and the potential difference caused by carrier separation was either based on macroscopic measurements or on theoretical calculations. With the nanosizing of the photocatalyst size, these measurement methods can no longer provide effective characterization for nano-photocatalysts. Therefore, the present invention provides a method for measuring the diffusion length of carriers excited by light in nano-photocatalysts at the microscale. By improving the optical path design, introducing double-aperture regulation and a precise positioning system, quantitative analysis of the carrier diffusion length under the condition of backlight illumination is achieved, providing a reliable microscale characterization means for the performance optimization of nano-photocatalytic materials.

[0049] Please refer to Figure 1 , Figure 1 which is a schematic structural diagram of a device for measuring the diffusion length of photo-generated carriers in a photocatalytic material based on KPFM provided by an embodiment of the present invention. As Figure 1 shown, the device includes:

[0050] A coordinate sample stage support 20, which is arranged on the top of the sample stage frame and is used to fix the coordinate copper mesh covered with graphene. The shared positioning system is constructed by using the marking points on the coordinate copper mesh, and this system is used to mark the position of the sample to be tested 10;

[0051] A double-aperture assembly 40, which is arranged below the coordinate sample stage support 20 and includes an upper aperture 401 and a lower aperture 402, and is used to regulate the size and position of the light spot by adjusting the stagger of the double-aperture holes;

[0052] The micro-displacement platform 50 is provided on the lower surface of the lower diaphragm 402 and is used to calibrate the position of the sample 10 to be measured and the position of the light spot.

[0053] The optical fiber fixing plate 70 is provided below the micro-displacement platform 50 assembly and is used to fix one end of the optical fiber 90 so that the direction of light is perpendicular to the plane where the diaphragm is located, thereby determining the irradiation area of the light spot on the sample 10 after passing through the diaphragm hole.

[0054] The base 80 is provided below the optical fiber fixing plate 70.

[0055] Among them, the coordinate sample stage holder 20, the micro-displacement platform 50 assembly, the optical fiber fixing plate 70, and the base 80 are sequentially connected by the diaphragm holder 30.

[0056] In this embodiment, the coordinate sample stage holder 20 selects a coordinate copper mesh covered with graphene as the sample stage 10. During actual experiments, first observe in the SEM to confirm the position of the target to be tested on the copper mesh of the coordinate sample stage holder 20, that is, the coordinate value relative to the marking point, so that the position to be tested can be quickly found after being transferred to the AFM.

[0057] In the diaphragm hole size and position adjustment device, usually a double-layer diaphragm is adopted. The upper diaphragm 401 and the lower diaphragm 402 can move relative to each other, and the size of the light spot is adjusted by adjusting the overlapping area of the two diaphragm holes. The lower diaphragm 402 is fixed on the micro-displacement platform 50 and can move with the micro-displacement platform instrument, thereby realizing the adjustment of the irradiation area of the light spot.

[0058] Preferably, the device uses the optical fiber 90 to provide light source. The optical fiber 90 fixing bracket is used to fix the end of the optical fiber 90 and make the direction of light perpendicular to the plane where the diaphragm is located to correctly evaluate the irradiation area of the light spot on the sample 10 after passing through the diaphragm hole.

[0059] The micro-displacement platform 50 is usually provided on the lower surface of the lower diaphragm 402 and is used to calibrate the position of the sample 10 to be measured and the position of the light spot.

[0060] In one embodiment, the coordinate copper mesh and the coordinate sample stage holder 20 are fixed by a detachable card slot.

[0061] A groove or protrusion structure matching the shape of the coordinate copper mesh is set on the surface edge or specific position of the coordinate sample stage holder 20 to form a detachable card slot. For example, U-shaped grooves adapted to the thickness of the coordinate copper mesh are machined on the four peripheral edges of the sample stage 10, or a fixed frame with elastic buckles is designed in the central area of the sample stage 10. During installation, align the coordinate copper mesh with the card slot of the coordinate sample stage holder 20, and gently press or push it in so that the protruding part of the copper mesh fits perfectly with the groove of the card slot. Some designs can use elastic buckles. By pressing the edge of the copper mesh, it can be snapped into the card slot and locked to ensure firm fixation. During disassembly, by applying a reverse force, the protruding part of the copper mesh can be disengaged from the card slot, and the copper mesh can be removed from the coordinate sample stage holder 20. For the elastic buckle design, quick disassembly can be achieved by releasing the locked state of the buckle. Since the matching dimensions of the card slot and the copper mesh are precisely machined, it is ensured that the copper mesh is flush with the surface of the coordinate sample stage holder 20 after installation, and the position repeatability error is less than the micron level, avoiding the influence of copper mesh tilt or displacement on subsequent spot positioning and measurement results.

[0062] In one embodiment, the upper aperture stop 401 is disposed on the lower aperture stop 402, and 401 and 402 can move relative to each other. The lower aperture stop 402 is fixed on the micro-displacement platform 50.

[0063] The aperture stop holder 30 is a vertical support structure, and its bottom is provided with a fixed card slot or threaded hole matching the size of the micro-displacement platform 50. For example, an annular groove is machined at the bottom of the aperture stop holder 30, and the edge of the micro-displacement platform 50 is fixed in the groove by screws or buckles. The micro-displacement platform 50 can achieve high-precision displacement in two dimensions (X-Y directions). By controlling the movement of the micro-displacement platform 50, the position of the lower aperture stop 402 can be moved, thereby adjusting the position of the spot irradiating the sample 10 on the coordinate copper mesh. By translating or rotating the upper aperture stop 401, the degree of intersection of the two aperture stop holes can be changed to achieve the adjustment of the spot size and position.

[0064] Preferably, the lower aperture stop 402 is moved within a two-dimensional plane through the micro-displacement platform 50, and the movement range is (-5, +5) mm, and the spot size adjustment range is (1, 100) μm.

[0065] In one embodiment, the common positioning system includes a coordinate marking module and an image synchronization module;

[0066] The coordinate marking module is used to ensure the unity of the coordinate reference of the SEM and the AFM;

[0067] The image synchronization module is used to collect SEM images and AFM images, and align the SEM images and AFM images at the pixel level through a feature matching algorithm.

[0068] The coordinate marking module is used to process high-precision coordinate marks on the surface of the coordinate copper mesh. For example, micron-level crosshairs, circular or square marks are etched at the grid intersections of the copper mesh. During SEM observation, an SEM image containing the coordinate marks is obtained by electron beam scanning, and the coordinate positions of the marks are recorded based on the SEM coordinate system. During AFM measurement, an AFM image of the same area is obtained by probe scanning, and the positions of the coordinate marks are synchronously recorded based on the AFM coordinate system. The conversion relationship between the two coordinate systems, such as translation, rotation, and scaling parameters, is calculated through software algorithms to achieve the unification of the SEM and AFM coordinate references.

[0069] In the image synchronization module, a high-resolution topographic image of sample 10 is collected using SEM, and at the same time, the surface potential or topographic image of the same area is collected using AFM. The SEM image and the AFM image are preprocessed, such as noise reduction and contrast enhancement, to improve the accuracy of feature matching. Then, a feature detection algorithm is further used to extract the key points in the images, and the corresponding feature point pairs in the two images are found through a descriptor matching algorithm. The random sample consensus algorithm is used to remove the mismatched points, and the transformation matrix between the images is calculated. Finally, the AFM image is geometrically corrected based on the transformation matrix to be precisely aligned with the SEM image at the pixel level.

[0070] The coordinate marking module ensures the positioning accuracy of the SEM image and the AFM image at the nanometer to micron scale through physical marking and coordinate system transformation, avoiding the deviation of the observation area caused by the difference in the device coordinate system. The image synchronization module realizes the pixel-level alignment of the SEM image and the AFM image, and can directly correlate the microstructure and electrical properties of the material.

[0071] Therefore, the device provided in this embodiment realizes spatial positioning with micron-level to nanometer-level accuracy through the combination of high-resolution SEM imaging and the coordinate copper mesh; the double-layer aperture assembly can flexibly adjust the spot size and position through the staggered design of the two-layer aperture holes to meet the measurement requirements of photocatalytic materials from the nanometer level to the micron level, improving the pertinence and accuracy of the experiment. The high-precision displacement ability of the micro-displacement platform ensures the precise alignment of the spot and the sample, effectively overcoming the problem of misalignment between the spot and the test area in the traditional method. The deployment of the common positioning system realizes the synchronous positioning of the SEM image and the AFM image, and the morphology observation and electrical property measurement can be carried out in the same microscopic area, avoiding the deviation of secondary sample positioning and improving the data correlation. The optical fiber fixing plate ensures that the light beam 60 is incident perpendicular to the aperture plane, so that the spot uniformly irradiates the sample surface, reducing the light intensity attenuation or spot distortion caused by the optical path tilt, and improving the uniformity of photo-generated carrier excitation. Each component is vertically integrated through the aperture holder, with a compact structure, reducing the complexity of optical path calibration.

[0072] See Figure 2, based on the measuring device provided in the above embodiments, in one embodiment, a method for measuring the diffusion length of photo-generated carriers of a photocatalytic material based on KPFM is further provided. As Figure 2 shown, the method includes the following steps:

[0073] Step S10: Disperse the sample to be measured on the surface of the coordinate copper mesh, obtain an SEM image through SEM, and record the marking coordinates of the target test area relative to the positioning marking points in the common positioning system;

[0074] Step S20: Adjust the double-layer aperture assembly according to the marking coordinates, change the staggered area of the double-layer aperture holes to match the size of the target test area; synchronously adjust the micro-displacement platform assembly to laterally move the coordinate sample stage holder 20 to pre-align the light spot with the target test area;

[0075] Step S30: Align the SEM image and the optical image of the target test area at the pixel level through the common positioning system, and finely adjust the position of the light spot through the micro-displacement platform assembly until the coincidence error between the light spot and the target test area is within the preset error;

[0076] Step S40: Drive the AFM probe to the target test area, use KPFM to measure the first potential distribution map on the surface of the sample to be measured under the condition of no light; turn on the fiber optic light source, apply a preset light intensity to the back surface of the sample to be measured through the double-layer aperture assembly, and synchronously record the second potential distribution map on the surface of the sample to be measured under the illumination condition; wherein, the test ranges of the first potential distribution map and the second potential distribution map are the same, and both are larger than the area irradiated by the light spot;

[0077] Step S50: Calculate the diffusion length of photo-generated carriers according to the first potential distribution map and the second potential distribution map.

[0078] In this embodiment, first, the target test area is located by SEM and the coordinates are recorded, and then the double-layer aperture and the micro-displacement platform are adjusted to preliminarily align the light spot with the target area; then, the SEM image and the optical image are pixel-level aligned by using the common positioning system, and the position of the light spot is further finely adjusted to high-precision coincidence; then, under the conditions of no light and preset light intensity, the surface potential distributions of the sample are measured by KPFM respectively, ensuring that the two measurement ranges are the same and cover the light spot area; finally, the diffusion length of photo-generated carriers is calculated based on the two potential data, realizing the full process automation and precision from positioning, alignment to electrical property measurement.

[0079] In a specific embodiment, in order to measure the carrier diffusion length, the operation steps are as follows:

[0080] 1) First, fish the two-dimensional large-area graphene on the coordinate copper mesh;

[0081] 2) Disperse the sample to be measured in a suitable medium, configure it to a suitable concentration, then drop it on a coordinate copper mesh, and air-dry it under an infrared lamp or naturally to make the sample to be measured. Observe the sample in the SEM and record the coordinate values of the target position or the positional relationship between the target position and the marked point;

[0082] 3) Place the coordinate sample stage holder carrying the sample on the coordinate sample stage holder and fix it with the corresponding card slot. Remove the optical fiber fixing frame part of the device and place it upside down under the SEM or optical microscope for observation. Confirm the irradiation area of the light spot on the coordinate sample stage holder and record the positional relationship between this area and the marked point on the coordinate sample stage holder. Take the device out of the SEM or optical microscope.

[0083] 4) Adjust the aperture and the micro-displacement platform connected to it according to the size of the target to be measured to obtain a light spot with a suitable size; according to the positional relationship between the target to be measured and the marked point, and the positional relationship between the marked point and the light spot, adjust the micro-displacement platform connected to the sample stage holder so that the target area to be measured is completely within the irradiation of the light spot. This step requires, after adjusting the two micro-displacement platforms respectively, removing the optical fiber fixing frame of the device and placing it upside down in the SEM for confirmation. The content to be confirmed includes the size and position of the light spot, and the morphology of the sample to be measured after passing through the graphene film.

[0084] 5) After determining the above positional relationship, install the optical fiber fixing frame of the device and fix the optical fiber on it. According to the existing positioning method, find the target area to be tested in the AFM. First, perform the test under the condition of no light illumination, record the test result to obtain the first potential distribution map; then apply light illumination, record the test result to obtain the second potential distribution map, and finally calculate the diffusion length of photo-generated carriers according to the first potential distribution map and the second potential distribution map.

[0085] See Figure 3 , in one embodiment, calculating the diffusion length of photo-generated carriers according to the first potential distribution map and the second potential distribution map includes:

[0086] Step S501: Perform matrix subtraction on the second potential distribution map and the first potential distribution map to obtain a third potential distribution map;

[0087] Step S502: Perform binarization processing on the third potential distribution map to determine the background area and the annular area different from the background area;

[0088] Step S503: Calculate the maximum width and average width between the annular areas; take the maximum width as the maximum diffusion distance of the carriers and the average width as the average diffusion distance of the carriers.

[0089] First, explain the test principle in this embodiment. See Figure 4, Figure 4 In (a) of it, the schematic diagram of the illumination range during the test is provided. By scanning on the graphene substrate, a first potential distribution map and a second potential distribution map can be obtained, as shown in Figure 4 (b) of it. Using the MATLAB tool to calculate the average distance and the maximum distance between two closed figures, which are respectively denoted as the average diffusion length and the maximum diffusion length. The maximum diffusion length is determined by the longest width between two regions, as shown in Figure 4 (c) of it. The average diffusion distance is calculated based on the area and the average perimeter, including first calculating the area A between two curves, which can adopt Green's theorem or the pixel counting method; then calculating the average perimeter L of the two curves, that is, the sum of the perimeters of the inner curve and the outer curve divided by 2; finally, the average distance, that is, the average diffusion length = A / L.

[0090] Specifically, when calculating the area using Green's theorem, Green's theorem can transform the calculation of the area enclosed by a closed curve into a line integral on the curve, which is applicable to mathematical analysis or numerical calculation. For a planar closed curve C, the area A it encloses can be calculated by the following line integral:

[0091] ;

[0092] In the formula, are the point coordinates on the curve , is the infinitesimal change on the curve.

[0093] During the calculation, first parameterize the curve. If the curve is represented by the parametric equation , , then:

[0094] ;

[0095] In the formula, the parametric equation , represents the function of the coordinates of the points on the curve changing with the parameter , are the lower and upper limits of the integral, , are the derivatives, is the area of the closed region enclosed by the curve.

[0096] If the curve consists of discrete points , such as polygon approximation, the shoelace formula can be used to calculate :

[0097] ;

[0098] In the formula, the discrete points Among them, , represents the vertices of the polygon; is the total number of discrete points.

[0099] If it is applied to the area between two curves, then:

[0100] Calculate the area enclosed by the outer curve and the area enclosed by the inner curve and the inner curve The area between the two curves is : : .

[0101] In one embodiment, when calculating the area using the pixel counting method, the process is as follows:

[0102] First step, binarize the image first, convert the image into a black and white binary image, the curve area is black, and the pixel value is 1; the background is white, and the pixel value is 0;

[0103] Second step, count the pixels: for a single curve, the area is equal to the total number of white pixels multiplied by the actual area of a single pixel. For the area between two curves, the outer curve and the inner curve The pixel area between them can be extracted through morphological operations, and then the number of white pixels in this area is counted and multiplied by the single pixel area to obtain the final area.

[0104] In one embodiment, after obtaining the third potential distribution map, it further includes:

[0105] Identify the potential values of the areas corresponding to the samples in the third potential distribution map, and judge the types of carriers generated during the photocatalyst photocatalytic response according to the positive and negative of the potential values, including:

[0106] When the potential value is positive, it is determined that the carrier type is a hole;

[0107] When the potential value is negative, it is determined that the carrier type is an electron.

[0108] See Figure 5 , Figure 5The principle of performing matrix subtraction on the first potential distribution map and the second potential distribution map is provided. In this figure, a new potential distribution map, i.e., the third potential distribution map, is obtained by subtraction. In the third potential distribution map, all potential values are negative, indicating that the potential on the catalyst surface decreases after illumination and electrons accumulate on the surface, that is, the carrier type is electrons. Conversely, if the potential value is positive, it means the carrier type is holes. The outermost circle of the bright area in the third potential map is a darker ring. By binarizing the picture, the ring area is highlighted, and its maximum width and average width are calculated, corresponding to the maximum diffusion length of 1190 nm and the average diffusion length of 702 nm respectively.

[0109] In one embodiment, in order to further improve the accuracy of the measurement results, multiple light illumination condition experiments can be set up, and then multiple groups of second potential distribution maps can be obtained. Eventually, the average value of the calculated multiple groups of diffusion lengths can be taken to reduce the error of a single test. Among them, Figure 6 the variation rules of light intensity and diffusion length are provided, as Figure 6 shown, as the light intensity increases, the diffusion length first increases, then stabilizes at a certain level and slowly decreases. Therefore, when determining the light intensity of the light illumination test, the minimum light intensity when the diffusion length increases to the maximum value is used as the standard intensity value for measuring the diffusion length.

[0110] In summary, the method provided in this embodiment realizes the nano-precise synchronous positioning of SEM morphology observation and AFM electrical measurement through sharing a positioning system and SEM image marking, avoiding the target area deviation caused by the difference in device coordinate systems in the traditional method, ensuring multi-modal analysis in the same microscopic area, and enhancing data correlation. Under the conditions of no light illumination and a preset light intensity, potential distribution maps covering the same area are obtained through KPFM, and the range is larger than the spot illumination area, ensuring that the comparative analysis of potential changes is not affected by the spot edge effect. The backlight illumination design can reduce light scattering interference and improve the uniformity and stability of light intensity application. Based on the highly accurate aligned spot and potential data, combined with the potential difference analysis before and after illumination, the diffusion range of photo-generated carriers can be determined more accurately. The standardized measurement process and multi-modal data fusion enhance the repeatability and scientific reliability of the experimental results. Therefore, this method realizes the quantitative analysis of the carrier diffusion length under the backlight illumination condition by improving the optical path design, introducing double-aperture regulation, and a precise positioning system, providing a reliable microscopic scale characterization means for the performance optimization of nano-photocatalytic materials.

[0111] Those of ordinary skill in the art can realize that the units and algorithm steps of each example described in combination with the embodiments disclosed herein can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. A professional technician can use different methods for each specific application to implement the described functions, but such implementation should not be considered to exceed the scope of the present invention.

Claims

1. A device for measuring the diffusion length of photo-generated carriers of a photocatalytic material based on KPFM, characterized in that The device includes: A coordinate sample stage holder, which is arranged on the top of the sample stage frame, is used to fix the coordinate copper mesh covered with graphene, and mark the position of the sample to be measured; A double-layer aperture assembly, which is arranged under the coordinate sample stage holder, includes an upper aperture and a lower aperture, and is used to control the size and position of the light spot by adjusting the stagger of the double-layer aperture holes; A micro-displacement platform, which is arranged on the lower surface of the lower aperture, is used to calibrate the position of the sample to be measured and the position of the light spot; An optical fiber fixing plate, which is arranged under the micro-displacement platform assembly, is used to fix one end of the optical fiber, so that the direction of light is perpendicular to the plane where the aperture is located, to determine the irradiation area of the light spot on the sample after passing through the aperture hole; A base, which is arranged under the optical fiber fixing plate, and a common positioning system is integrated inside; the common positioning system is used for synchronous positioning between the scanning electron microscope and the atomic force microscope; Among them, the coordinate sample stage holder, the micro-displacement platform assembly, the optical fiber fixing plate and the base are sequentially connected by an aperture frame.

2. The device for measuring the diffusion length of photo-generated carriers of the photocatalytic material based on KPFM according to claim 1, wherein The coordinate copper mesh and the coordinate sample stage holder are fixed by a detachable card slot.

3. The device for measuring the diffusion length of photo-generated carriers of a photocatalytic material based on KPFM according to claim 1, wherein The aperture frame can be lifted and lowered in the vertical direction to adapt to the requirements of different thicknesses of samples to be measured and different sizes of light spot focusing.

4. The device for measuring the diffusion length of photo-generated carriers of a photocatalytic material based on KPFM according to claim 1, characterized in that, The common positioning system includes a coordinate marking module and an image synchronization module; The coordinate marking module is used to ensure the unity of the coordinate reference of the SEM and the AFM; The image synchronization module is used to collect SEM images and AFM images, and align the SEM images and AFM images at the pixel level through a feature matching algorithm.

Citation Information

Patent Citations

  • Device and method for measuring carrier lifetime of two-dimensional semiconductor material

    CN114002157A

  • Device and method for measuring diffusion coefficient of nanoscale minority carriers of semiconductor material

    CN114414969A