Super-atom beam source screening device

Abstract

The invention belongs to the technical field of semiconductor material processing, and discloses a super-atom beam source screening device. The super-atom beam source screening device comprises a supporting seat, an outer shell, an inner shell, a magnet assembly, an interlayer and a cover body assembly, wherein the magnet assembly is arranged between the outer shell and the inner shell; the interlayer is arranged between the outer shell and the magnet assembly; the cover body assembly comprises a first cover body and a second cover body, and the first cover body and the second cover body are arranged at the two ends of the outer shell respectively. The ionized super-atom beam source enters the channel of the inner shell, the magnet assembly is arranged and can generate a magnetic field, so that the super-atom ions ionized by the super-atom beam source are emitted in parallel to the channel, the monatomic ions deflect and collide with the inner wall of the channel, and then the monatomic ions are screened out. Therefore, the screening of the super-atom beam source is realized, and the process effect is improved. And the structure in the outer shell is protected by arranging the first cover body and the second cover body. And by arranging the interlayer, the magnet assembly can be conveniently fixed.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material processing, and particularly to a screening device for a superatom beam source. Background Art

[0002] With the development of ultra-large scale integrated circuits, the semiconductor surface processing technology has become increasingly refined, especially in the wafer surface polishing and etching processes, where the precision requirements are already very high. In the conventional plasma process treatment, gas molecules are ionized to form single atomic ions that bombard the wafer surface, which will have a significant implantation effect on the wafer surface lattice and affect the surface smoothness and lattice quality. A superatom is a nanoparticle with a diameter at the nanometer level formed by gas molecules bound together by van der Waals forces, which contains hundreds to thousands of gas molecules. When a superatom undergoes ionization collisions and electromagnetic field motion, it can be regarded as an "atom". However, compared with a single atom, the particle mass and collision cross-section are increased by several times to thousands of times. When a superatom collides with the material surface, a lateral sputtering effect and a local thermal annealing effect will occur, which can effectively improve the surface smoothness and surface lattice quality, and this characteristic has achieved good process effects in wafer surface treatment.

[0003] However, there are many problems to be solved urgently in the formation process of the superatom beam. For example, in the process of using gas molecules to undergo adiabatic expansion and then the thermal motion rapidly decreases, and the colliding gas molecules are combined by intermolecular van der Waals forces to form superatoms, not all gas molecules can be combined to form superatoms, and those uncombined gas molecules exist alone. These individually existing gas molecules are ionized to form single atomic ions, and these single atomic ions will have a significant implantation effect on the wafer surface lattice during subsequent bombardment of the wafer surface, affecting the surface smoothness and lattice quality, resulting in poor process effects. Therefore, there is an urgent need for a screening device for a superatom beam source to remove the individually existing gas molecules in the superatom beam source and solve the problem of poor semiconductor surface process effects. Summary of the Invention

[0004] The purpose of the present invention is to provide a screening device for a superatom beam source, which can realize the removal of individually existing gas molecules in the superatom beam source and solve the problem of poor semiconductor surface process effects.

[0005] To achieve this purpose, the present invention adopts the following technical solutions:

[0006] A screening device for a superatom beam source, comprising:

[0007] A support seat;

[0008] An outer housing, fixed to the support seat;

[0009] An inner housing, disposed inside the outer housing, and the inner housing is provided with a channel for the ionized superatom beam source to pass through;

[0010] A magnet assembly is disposed between the outer housing and the inner housing. The magnet assembly can generate a magnetic field to ionize the superatomic beam source, causing the superatomic ions after ionization to be emitted parallel to the channel, and deflecting and screening out the single atomic ions.

[0011] A sandwich layer is disposed between the outer housing and the magnet assembly.

[0012] A cover assembly includes a first cover and a second cover, and the first cover and the second cover are respectively disposed at two ends of the outer housing.

[0013] In some possible embodiments, the magnetic field intensity near the axis in the channel is less than that near the inner wall by the magnet assembly.

[0014] In some possible embodiments, the magnet assembly includes a plurality of magnets, and the plurality of magnets are arranged in a surrounding manner on the outer wall of the inner housing.

[0015] In some possible embodiments, the sandwich layer is a heat dissipation layer.

[0016] In some possible embodiments, a coiled pipe is provided in the sandwich layer for accommodating a cooling medium, and the coiled pipe is provided with a joint for introducing the cooling medium.

[0017] In some possible embodiments, the superatomic beam source screening device further includes a first limiting member and a second limiting member. One side of the first limiting member abuts against the first cover, and the other side of the first limiting member abuts against both the magnet assembly and the sandwich layer. One side of the second limiting member abuts against the second cover, and the other side of the second limiting member abuts against both the magnet assembly and the sandwich layer.

[0018] In some possible embodiments, the superatomic beam source screening device further includes a third limiting member and a fourth limiting member. The material of the inner housing is a conductive material, and the materials of the third limiting member and the fourth limiting member are both insulating materials. The third limiting member is disposed between the first cover and the first limiting member and abuts against the outer wall of the inner housing. The fourth limiting member is disposed between the second cover and the second limiting member and abuts against the outer wall of the inner housing.

[0019] In some possible embodiments, the inner housing includes a housing body and a housing cover. The housing body can abut against the third limiting member, and the housing cover is detachably connected to the end of the housing body and can abut against the fourth limiting member.

[0020] In some possible embodiments, the superatom beam source screening device further includes a first screw and a second screw. The first screw sequentially passes through the first cover and the first limiting member and is threadedly connected to the sandwich layer; the second screw sequentially passes through the second cover and the second limiting member and is threadedly connected to the sandwich layer.

[0021] In some possible embodiments, the superatom beam source screening device further includes a third screw and a fourth screw. The third screw passes through the first cover and is threadedly connected to the outer housing; the fourth screw passes through the second cover and is threadedly connected to the outer housing.

[0022] Advantages of the present invention:

[0023] The superatom beam source screening device provided by the present invention includes a support base, an outer housing, an inner housing, a magnet assembly, a sandwich layer, and a cover assembly. The ionized superatom beam source enters the channel of the inner housing. By providing the magnet assembly, the magnet assembly can generate a magnetic field, causing the superatom ions after ionization of the superatom beam source to be emitted parallel to the channel, deflecting the single-atom ions and colliding with the inner wall of the channel, thereby screening out the single-atom ions, and thus realizing the screening of gas molecules existing alone in the superatom beam source, improving the process effect. By providing the first cover and the second cover, the structure inside the outer housing is protected. By providing the sandwich layer, it is convenient to fix the magnet assembly and ensure the stability of the structure. Description of the Drawings

[0024] Figure 1 is a schematic structural diagram of the superatom beam source screening device provided by the present invention;

[0025] Figure 2 is a cross-sectional view of the superatom beam source screening device involved in the present invention;

[0026] Figure 3 is a partial schematic structural diagram of the superatom beam source screening device involved in the present invention.

[0027] In the figure:

[0028] 1, support base; 2, outer housing; 3, inner housing; 31, channel; 32, housing body; 33, shell cover; 4, magnet assembly; 41, magnet; 5, sandwich layer; 51, first threaded hole; 52, second threaded hole; 53, joint; 6, first cover; 61, first limiting member; 7, second cover; 71, second limiting member; 8, protection member; 9, third limiting member; 10, fourth limiting member. Detailed Embodiments

[0029] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the present invention, rather than limiting the present invention. In addition, it should be noted that for the convenience of description, only the parts related to the present invention are shown in the drawings, rather than all the structures.

[0030] In the description of the present invention, unless otherwise clearly defined and limited, the terms "connected", "connected to", and "fixed" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0031] In the present invention, unless otherwise clearly defined and limited, the first feature being "above" or "below" the second feature may include the direct contact between the first and second features, or may include the situation where the first and second features are not in direct contact but in contact through other features between them. Moreover, the first feature being "above", "above and to the right of", and "on the top of" the second feature includes the first feature being directly above and diagonally above the second feature, or simply indicating that the horizontal height of the first feature is higher than that of the second feature. The first feature being "below", "below and to the left of", and "underneath" the second feature includes the first feature being directly below and diagonally below the second feature, or simply indicating that the horizontal height of the first feature is lower than that of the second feature.

[0032] In the description of this embodiment, the orientation or positional relationships such as "above", "below", "right", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of description and simplifying the operation, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation to the present invention. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.

[0033] Such as Figures 1 to 3As shown in the figure, the present invention provides a screening device for a superatomic beam source, which includes a support base 1, an outer housing 2, an inner housing 3, a magnet assembly 4, a sandwich layer 5, and a cover assembly. The outer housing 2 is fixed to the support base 1; the inner housing 3 is disposed inside the outer housing 2, and the inner housing 3 is provided with a channel 31 for the ionized superatomic beam source to pass through; the magnet assembly 4 is disposed between the outer housing 2 and the inner housing 3, and the magnet assembly 4 can generate a magnetic field to make the superatomic ions after the superatomic beam source is ionized shoot out parallel to the channel 31, and then can be incident on the semiconductor surface, and the single atomic ions are deflected and screened out. Specifically, the single atomic ions collide with the inner wall of the channel 31 or the baffle disposed outside the outer housing 2 and are screened out.

[0034] The ionized superatomic beam source enters the channel 31 of the inner housing 3. Since the mass of the superatomic ions is hundreds to thousands of times that of the single atomic ions, the deflection radius will differ by dozens to hundreds of times. The single atomic ions with low mass have a small deflection radius, and the superatomic ions with higher mass have a very large deflection radius and are hardly deflected by the magnetic field. By setting the magnet assembly 4, the superatomic ions with a larger deflection radius are made to shoot out parallel to the channel 31, and the single atomic ions with a smaller deflection radius collide with the inner wall of the channel 31 or the baffle disposed outside the outer housing 2 and are screened out, thereby screening out the single atomic ions and realizing the screening of the superatomic beam source, improving the process effect. By setting the first cover 6 and the second cover 7, the structure inside the outer housing 2 is protected. By setting the sandwich layer 5, it is convenient to fix the magnet assembly 4 and ensure the stability of the structure.

[0035] Optionally, the magnet assembly 4 makes the magnetic field intensity near the axis in the channel 31 less than the magnetic field intensity near the inner wall. Since the greater the magnetic field intensity, the smaller the deflection radius of the ions, the above setting makes the deflection radius of the single atomic ions become smaller from the axis of the channel 31 towards the inner wall direction, making the single atomic ions more likely to impact on the inner housing 3 and further preventing the single atomic ions from being incident on the semiconductor surface.

[0036] Optionally, the magnet assembly 4 includes a plurality of magnets 41, and the plurality of magnets 41 are arranged in a surrounding manner on the outer wall of the inner housing 3, which can make the magnetic field concentrate inside the channel 31. Optionally, the magnets 41 are bonded or riveted to the sandwich layer 5.

[0037] Optionally, the magnet 41 is provided with at least four magnets 41. The magnetization directions of two relatively arranged magnets 41 are the same, and at least four magnets 41 form a Halbach array. Specifically, in this embodiment, twelve magnets 41 are provided, and the cross-section of each magnet 41 is an isosceles trapezoid. The magnetization direction rotates 30° between adjacent two magnets 41. With such a setting, the magnetic field strength in the channel 31 gradually increases from the axis to the inner wall. Optionally, the magnetic field at the axis position is a uniform magnetic field, and the magnetic field strength is 0.5T. Optionally, the length range of the upper base of the isosceles trapezoid is 3 - 80 mm. The larger the length of the upper base, the weaker the magnetic field strength in the channel 31. The weaker the magnetic field strength, the too small deflection angle of the single atomic ions, and the single atomic ions cannot be screened out. The smaller the length of the upper base, the stronger the magnetic field strength in the channel 31, which will cause the deflection angle of the single atomic ions to increase, a large number of single atomic ions to hit the inner wall of the inner shell 3, resulting in a sharp increase in the temperature of the inner shell 3. In addition, it will cause some superatoms with smaller masses to be deflected and unable to shoot out smoothly, resulting in reduced efficiency.

[0038] Optionally, the interlayer 5 is a heat dissipation layer, which can dissipate heat from the inner shell 3 and prevent the inner shell 3 from being damaged due to long-term heating by the collision of single atomic ions. Optionally, in this embodiment, a coil is provided in the interlayer 5 for accommodating a cooling medium. The coil is provided with a joint 53 for introducing the cooling medium. With such a setting, the heat dissipation effect is better, and it is convenient to connect with an external water source or gas source.

[0039] Optionally, the superatom beam source screening device further includes a first limiting member 61 and a second limiting member 71. One side of the first limiting member 61 abuts against the first cover 6, and the other side of the first limiting member 61 abuts against both the magnet assembly 4 and the interlayer 5. One side of the second limiting member 71 abuts against the second cover 7, and the other side of the second limiting member 71 abuts against both the magnet assembly 4 and the interlayer 5. By providing the first limiting member 61 and the second limiting member 71, the dislocation between the magnet assembly 4 and the interlayer 5 is avoided, and the overall structure can be ensured to be more stable.

[0040] Optionally, the ultra-atomic beam source screening device further includes a third limiting member 9 and a fourth limiting member 10. The inner housing 3 is made of a conductive material, and the third limiting member 9 and the fourth limiting member 10 are both made of insulating materials. The third limiting member 9 is disposed between the first cover 6 and the first limiting member 61, and the third limiting member 9 abuts against the outer wall of the inner housing 3. The fourth limiting member 10 is disposed between the second cover 7 and the second limiting member 71, and the fourth limiting member 10 abuts against the outer wall of the inner housing 3. When a single atomic ion hits the wall surface of the channel 31 of the inner housing 3, an electric current will be generated, and the electric current will flow on the inner housing 3. Since the third limiting member 9 and the fourth limiting member 10 are both made of insulating materials, it can prevent the electric current on the inner housing 3 from overflowing. The third limiting member 9 abuts against the outer wall of the inner housing 3, and the fourth limiting member 10 abuts against the outer wall of the inner housing 3, so that there are gaps between the first limiting member 61, the second limiting member 71 and the magnet assembly 4 and the inner housing 3, avoiding the inflow of electric current. In addition, since there is a gap between the outer wall of the inner housing 3 and other structures, a microammeter can be externally connected to the outer wall of the inner housing 3 to measure the flow rate of the single atomic ions hitting the wall surface. Specifically, the inner housing 3 is made of a metal material.

[0041] Optionally, the inner housing 3 includes a housing body 32 and a housing cover 33. The housing body 32 can abut against the third limiting member 9, and the housing cover 33 is detachably connected to the end of the housing body 32 and can abut against the fourth limiting member 10. With such a setting, while facilitating the installation of the inner housing 3, the axial limitation of the inner housing 3 can be realized.

[0042] Optionally, the ultra-atomic beam source screening device further includes a first screw and a second screw. The first screw sequentially passes through the first cover 6 and the first limiting member 61 and is threadedly connected to the sandwich layer 5. The second screw sequentially passes through the second cover 7 and the second limiting member 71 and is threadedly connected to the sandwich layer 5. With such a setting, it is convenient to disassemble and the connection is firm.

[0043] Optionally, the ultra-atomic beam source screening device further includes a third screw and a fourth screw. The third screw passes through the first cover 6 and is threadedly connected to the outer housing 2. The fourth screw passes through the second cover 7 and is threadedly connected to the outer housing 2. With such a setting, the reliable connection among the first cover 6, the second cover 7 and the outer housing 2 is ensured.

[0044] Optionally, the ultra-atomic beam source screening device further includes a protection member 8, and the protection member 8 is disposed on the magnet assembly 4. By providing the protection member 8, the friction and wear of the magnet assembly 4 can be reduced, and the service life of the magnet assembly 4 can be prolonged.

[0045] Specifically, when installing the superatom beam source screening device, first, put the sandwich layer 5 into the outer housing 2, install the magnet assembly 4 in the sandwich layer 5, and install the protective part 8. Then place the first limiting part 61 and the second limiting part 71 at both ends of the magnet assembly 4 and the sandwich layer 5. Secondly, place the third limiting part 9 and the fourth limiting part 10 outside the first limiting part 61 and the second limiting part 71 respectively. Then install the first cover 6 and the second cover 7. Finally, insert the housing body 32 and connect the housing cover 33 to the end of the housing body 32.

[0046] Optionally, the superatom beam source screening device further includes an incident end cover which is fixed to the side of the first cover 6 away from the outer housing 2. Optionally, the superatom beam source screening device further includes a heat sink which is fixed to the side of the second cover 7 away from the outer housing 2.

[0047] Optionally, to further ensure the structural stability, the superatom beam source screening device includes a fifth screw and a sixth screw which are arranged at intervals. The sandwich layer 5 is provided with a first threaded hole 51 and a second threaded hole 52. The fifth screw sequentially passes through the support base 1 and the outer housing 2 and is threadedly connected to the first threaded hole 51; the sixth screw passes through the outer housing 2 and is threadedly connected to the second threaded hole 52.

[0048] Obviously, the above-mentioned embodiments of the present invention are only examples for clearly explaining the present invention, rather than limitations on the implementation manners of the present invention. For those of ordinary skill in the art, various obvious changes, re-adjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to enumerate all the implementation manners here. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included in the protection scope of the claims of the present invention.

Claims

1. A super-atom beam source screening device, characterized in that: include: Support seat (1); An outer shell (2) is fixed to the support base (1); An inner shell (3) is arranged inside the outer shell (2), and the inner shell (3) is provided with a channel (31) for allowing the ionized super-atom beam source to pass through; A magnet assembly (4) is arranged between the outer shell (2) and the inner shell (3), and the magnet assembly (4) is capable of generating a magnetic field to cause superatomic ions ionized by the superatomic beam source to be ejected parallel to the channel (31), and to deflect monatomic ions so as to be screened out; An interlayer (5) is provided between the outer shell (2) and the magnet assembly (4); The cover body assembly comprises a first cover body (6) and a second cover body (7), wherein the first cover body (6) and the second cover body (7) are respectively arranged at two ends of the outer shell (2).

2. The superatomic beam source screening device according to claim 1, characterized in that: The magnet assembly (4) makes the magnetic field strength near the axis in the channel (31) smaller than the magnetic field strength near the inner wall.

3. The superatomic beam source screening device according to claim 2, characterized in that: The magnet assembly (4) comprises a plurality of magnets (41), and the plurality of magnets (41) are arranged around the outer wall of the inner shell (3).

4. The superatomic beam source screening device according to claim 1, characterized in that: The interlayer (5) is a heat dissipation layer.

5. The superatomic beam source screening device according to claim 4, characterized in that: A coil is provided in the interlayer (5) for containing a cooling medium, and a joint (53) is provided on the coil for introducing the cooling medium.

6. The superatomic beam source screening device according to claim 1, characterized in that: The superatomic beam source screening device further comprises a first limiting member (61) and a second limiting member (71), wherein one side of the first limiting member (61) abuts against the first cover body (6), and the other side of the first limiting member (61) abuts against both the magnet assembly (4) and the interlayer (5), and one side of the second limiting member (71) abuts against the second cover body (7), and the other side of the second limiting member (71) abuts against both the magnet assembly (4) and the interlayer (5).

7. The superatomic beam source screening device according to claim 6, characterized in that: The super-atom beam source screening device further comprises a third limiter (9) and a fourth limiter (10); the material of the inner shell (3) is a conductive material, and the materials of the third limiter (9) and the fourth limiter (10) are both insulating materials; the third limiter (9) is arranged between the first cover (6) and the first limiter (61), and the third limiter (9) abuts against the outer wall of the inner shell (3); the fourth limiter (10) is arranged between the second cover (7) and the second limiter (71), and the fourth limiter (10) abuts against the outer wall of the inner shell (3).

8. The superatomic beam source screening device according to claim 7, characterized in that: The inner shell (3) comprises a shell body (32) and a shell cover (33); the shell body (32) can abut against the third limiting member (9); the shell cover (33) is detachably connected to the end of the shell body (32) and can abut against the fourth limiting member (10).

9. The superatomic beam source screening device according to claim 6, characterized in that: The super-atom beam source screening device further comprises a first screw and a second screw, wherein the first screw sequentially passes through the first cover body (6) and the first stopper (61) and is threadedly connected to the interlayer (5); and the second screw sequentially passes through the second cover body (7) and the second stopper (71) and is threadedly connected to the interlayer (5).

10. The superatomic beam source screening device according to any one of claims 1 to 9, characterized in that: The super-atom beam source screening device further comprises a third screw and a fourth screw, wherein the third screw passes through the first cover body (6) and is threadedly connected to the outer shell (2); and the fourth screw passes through the second cover body (7) and is threadedly connected to the outer shell (2).

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