Independent electron beam correction chip, manufacturing method thereof and electron beam detection equipment

Abstract

The invention provides an independent electron beam correction chip, a manufacturing method thereof and electron beam detection equipment. The independent electron beam correction chip comprises a semiconductor substrate, a dielectric layer and a first electrode group. The dielectric layer is arranged on the semiconductor substrate, a first through hole penetrating through the semiconductor substrate and the dielectric layer is formed in the first direction, and the first direction is the direction perpendicular to the surface of the semiconductor substrate. The first electrode group comprises a plurality of electrodes arranged around the first through hole. One part of each electrode is located in the dielectric layer, and the other part of each electrode protrudes out of the dielectric layer in the first direction. According to the embodiment of the invention, the limitation of the back-end process can be overcome, the height of the electrode is increased, and the correction capability and reliability of the independent electron beam correction chip are improved.

Description

Technical Field

[0001] The present application relates to the technical field of electron beam detection, and particularly relates to an independent electron beam correction chip, a manufacturing method thereof, and an electron beam detection device. Background Art

[0002] An electron beam detection device is an essential device in the semiconductor manufacturing process and can be applied to processes such as electron beam lithography, defect detection, and dimension measurement. The electron beam detection device may include an electron beam source and an independent electron beam corrector (IBC) chip. The independent electron beam corrector chip can independently adjust each electron beam and can correct parameters such as the angle, position, and astigmatism of the electron beam.

[0003] The electron beam detection device can be divided into a single electron beam detection device and a multi-electron beam detection device. Among them, the multi-electron beam detection device has higher measurement efficiency and resolution. However, for the multi-electron beam detection device, the electron beam emitted by the electron beam source needs to pass through multiple through holes in the independent electron beam corrector chip, which requires a high functional consistency of the multiple through holes in the independent electron beam corrector chip. Generally, the more the number of through holes, the higher the requirement for the morphology consistency of each through hole and the electrode morphology.

[0004] In the related art, an independent electron beam corrector chip is usually fabricated by a micro electro mechanical systems (MEMS) process, and the metal layer fabricated by the back end of line (BEOL) process is used as an electrode to control the trajectory of the electron beam. Due to the limitation of the BEOL process, the height of the electrode in the independent electron beam corrector chip cannot be increased continuously. Generally, the height of the electrode is below 10 μm, so that the correction ability of the independent electron beam corrector chip is limited. Moreover, it will make the working voltage of the independent electron beam corrector chip higher, resulting in higher power consumption of the independent electron beam corrector chip and affecting the reliability of the independent electron beam corrector chip. Summary of the Invention

[0005] Embodiments of the present application provide an independent electron beam corrector chip, a manufacturing method thereof, and an electron beam detection device, so as to improve the correction ability and reliability of the independent electron beam corrector chip.

[0006] In a first aspect, an embodiment of the present application provides an independent electron beam correction chip. In the independent electron beam correction chip of the embodiment of the present application, there is at least one through hole. During operation, the electron beam can pass through the through hole and shoot towards the object to be measured. A plurality of electrodes are arranged around each through hole, and each electrode can form an electric field at the position of the through hole, so as to correct the electron beam passing through the through hole. In a possible implementation manner, the independent electron beam correction chip in the embodiment of the present application may include a plurality of through holes, that is, the number of through holes may be greater than 1. The independent electron beam correction chip in the embodiment of the present application can be applied to a single electron source multi-electron beam detection device. In another possible implementation manner, the independent electron beam correction chip in the embodiment of the present application may also include only one through hole, and the independent electron beam correction chip in the embodiment of the present application can be applied to a single electron source single electron beam detection device.

[0007] The independent electron beam correction chip provided by the embodiment of the present application may include: a semiconductor substrate, a dielectric layer, and a first electrode group. The dielectric layer is disposed on the semiconductor substrate. A first through hole penetrating the semiconductor substrate and the dielectric layer is provided in a first direction, and the first direction is a direction perpendicular to the surface of the semiconductor substrate. In the embodiment of the present application, the first direction may be a direction perpendicular to the surface of the semiconductor substrate and upward, or the first direction may also be a direction perpendicular to the surface of the semiconductor substrate and downward. The first electrode group includes: a plurality of electrodes arranged around the first through hole. Each electrode in the first electrode group can be evenly distributed around the first through hole. In specific implementation, the number of electrodes in the first electrode group can be set according to actual needs. The cross-sectional shape of the electrode can be trapezoidal, circular, rectangular, fan-shaped or other shapes. During the operation of the independent electron beam correction chip, the electron beam passes through the first through hole and shoots towards the object to be measured, and the electrode can form an electric field at the position of the first through hole, so as to correct the electron beam passing through the first through hole.

[0008] In the embodiment of the present application, the first through hole penetrates the independent electron beam correction chip in the first direction. In specific implementation, in addition to penetrating the semiconductor substrate and the dielectric layer, the first through hole may also penetrate other film layers in the independent electron beam correction chip. Exemplarily, the independent electron beam correction chip may further include: a protective layer located above the dielectric layer, and the first through hole may penetrate the semiconductor substrate, the dielectric layer, and the protective layer in the first direction.

[0009] The independent electron beam correction chip in the embodiment of the present application may include one or more through holes. When the independent electron beam correction chip includes a plurality of through holes, for example, the independent electron beam correction chip may further include a second through hole, a third through hole, etc. The specific setting manner of other through holes may refer to the setting of the first through hole, and the repeated parts will not be described again.

[0010] In an embodiment of the present application, a part of each electrode is located within the dielectric layer, and another part of each electrode protrudes from the dielectric layer in a first direction. Optionally, the electrode may protrude upward from the dielectric layer in the first direction, or the electrode may also protrude downward from the dielectric layer in the first direction.

[0011] It should be noted that the orientation-related expressions such as "above", "below", "upward", "downward", "upper surface", "lower surface", etc. in the embodiments of the present application are described based on the perspective that the dielectric layer is located above the semiconductor substrate. It is only for the convenience of describing the relative position relationship between two components and does not indicate or imply that a certain component must be in a specific orientation. In addition, in the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0012] In the independent electron beam correction chip provided by the embodiment of the present application, a part of each electrode is located within the dielectric layer, and another part of each electrode protrudes from the dielectric layer in a first direction. During the manufacturing process, electroplating process, through silicon via (TSV) process or other processes can be used to manufacture the electrode, thereby overcoming the limitations of the back-end process, increasing the height of the electrode, and improving the correction ability of the independent electron beam correction chip. In addition, by increasing the height of the electrode, the control path of the independent electron beam correction chip for the electron beam can be made longer. In this way, during the operation of the independent electron beam correction chip, the working voltage can be reduced, thereby reducing the power consumption of the electron correction chip and improving the reliability of the independent electron beam correction chip. Therefore, the correction ability and reliability of the independent electron beam correction chip provided by the embodiment of the present application are both relatively high.

[0013] In some embodiments of the present application, each electrode may include: a first sub-electrode and a second sub-electrode which are stacked and electrically connected, and the second sub-electrode is located above the first sub-electrode. At least a part of the first sub-electrode is located within the dielectric layer, and in the first direction, the first sub-electrode does not exceed the upper surface of the dielectric layer. At least a part of the second sub-electrode protrudes from the upper surface of the dielectric layer. That is to say, the first sub-electrode may be located below the upper surface of the dielectric layer, a part of the second sub-electrode is located within the dielectric layer, and another part of the second sub-electrode protrudes from the upper surface of the dielectric layer; or the upper surface of the first sub-electrode may be flush with the upper surface of the dielectric layer, and the second sub-electrode completely protrudes from the upper surface of the dielectric layer. In a specific implementation, the first sub-electrode is located on the inner wall of the first through hole, and the surface of the first sub-electrode facing the inside of the first through hole may be covered by the dielectric layer. Of course, the surface of the first sub-electrode facing the inside of the first through hole may also be exposed, which can be set according to actual needs.

[0014] In a possible implementation, other film layers may be provided on the dielectric layer. In the first direction, the second sub-electrode may also protrude from other film layers on the dielectric layer. Exemplarily, a protective layer may be provided on the dielectric layer. In the first direction, the first through-hole penetrates the protective layer, and the second sub-electrode protrudes from the upper surface of the protective layer.

[0015] In the manufacturing process, an electroplating process may be used to fabricate the second sub-electrode. Thus, the limitations of the back-end process can be overcome, the height of the electrode can be increased, and the correction ability of the independent electron beam correction chip can be improved. Exemplarily, the height of the first electrode may be about 10 μm, and the height of the second electrode may be about 20 μm. Compared with the related art where the back-end process can only fabricate electrodes within 10 μm, the embodiments of the present application can significantly increase the height of the electrode.

[0016] In specific implementation, both the first sub-electrode and the second sub-electrode in the electrode may include a metal material. Exemplarily, the first sub-electrode may include at least one of aluminum, copper, and tungsten, and the second sub-electrode may include at least one of gold, tungsten, and copper. Of course, in some cases, the first sub-electrode and the second sub-electrode may also include other metal materials or other conductive materials.

[0017] In a possible implementation manner, the first sub-electrode may include: a plurality of sheet-like electrodes located in the dielectric layer. The thickness of the sheet-like electrodes is relatively thin. Exemplarily, the thickness of the sheet-like electrodes may be significantly smaller than the width of the electrode in the horizontal direction (i.e., the direction parallel to the surface of the semiconductor substrate). A plurality of conductive connection holes are also provided in the dielectric layer. Each conductive connection hole is located between two adjacent components in the first direction, and the conductive connection holes are used to electrically connect two adjacent components in the first direction. The sheet-like electrodes are stacked, and every two adjacent sheet-like electrodes are electrically connected through at least one conductive connection hole provided in the dielectric layer. In specific implementation, two adjacent sheet-like electrodes may be electrically connected through one, two, or more conductive connection holes. In specific implementation, the sheet-like electrodes may include metal materials such as aluminum and copper. The first sub-electrode is composed of a plurality of stacked sheet-like electrodes, which can make the height of the first sub-electrode relatively large. In the manufacturing process, the back-end process may be used to fabricate each sheet-like electrode layer by layer to obtain a first sub-electrode with a relatively large height.

[0018] In another possible implementation, the first sub-electrode can be a strip-shaped electrode arranged along the first direction. The first sub-electrode can be an integral structure, that is, the first sub-electrode is a component made by an integral molding process. In this way, the height of the first sub-electrode can be relatively large, and the consistency of multiple first sub-electrodes is relatively high. A part of the first sub-electrode is located within the dielectric layer, and another part of the first sub-electrode is located within the semiconductor substrate. The height of the electrode can be further increased, thereby further improving the correction ability and reliability of the independent electron beam correction chip. In specific implementation, to prevent the material in the first sub-electrode from falling off from the back surface, the first sub-electrode can be set not to penetrate the semiconductor substrate, that is, the lower surface of the first sub-electrode is covered by the semiconductor substrate. Of course, in some cases, the first sub-electrode can also be only located within the dielectric layer, and the heights of the first sub-electrode and the second sub-electrode in the electrode can be set according to actual power requirements.

[0019] In the manufacturing process, the through silicon via (TSV) process can be used to manufacture the first sub-electrode. Specifically, blind holes penetrating the dielectric layer and part of the semiconductor substrate (or only penetrating the dielectric layer) can be manufactured first, and then conductive materials, such as metal materials such as aluminum, copper, and tungsten, can be filled in the blind holes to obtain the first sub-electrode. In this way, the consistency of the manufactured first sub-electrodes is relatively good, so that the uniformity of the electric field formed by each electrode is relatively good. Moreover, multiple first sub-electrodes can be manufactured by using the same process at one time, and the manufacturing process is relatively simple and the manufacturing efficiency is relatively high. In the embodiments of the present application, setting the first sub-electrode as a strip-shaped electrode arranged along the first direction can make the height of the first sub-electrode reach the level of 100 μm, can greatly increase the height of the electrode, and effectively reduce the working voltage and power consumption of the independent electron beam correction chip.

[0020] To apply a voltage to the electrode, a control element is provided at a position inside the semiconductor substrate close to the dielectric layer. The power supply in the electron beam detection device can be electrically connected to the electrode through the control element. Therefore, the voltage applied to the electrode can be controlled through the control element, and further the electric field formed at the first through hole can be controlled. Exemplarily, the control element can be a transistor or other devices.

[0021] To electrically connect the control element to the electrode, the independent electron beam correction chip in the embodiments of the present application may further include: a first connection portion and a conductive connection member located within the dielectric layer, and the conductive connection member is located above the first connection portion and the first sub-electrode. The control element is electrically connected to the conductive connection member through the first connection portion, and the conductive connection member is electrically connected to the first sub-electrode. The second sub-electrode is located above the conductive connection member and is in contact connection with the conductive connection member. In this way, the control element can apply a voltage to the electrode through the first connection portion and the conductive connection member to form an electric field at the position of the first through hole, and the voltage output by the control element can act on the first sub-electrode and the second sub-electrode simultaneously, thereby achieving the effect of increasing the height of the electrode. It can be understood that in some cases, the side surface of the conductive connection member close to the first through hole may not be covered by the dielectric layer, that is, the surface of the conductive connection member close to the inside of the first through hole may be exposed. At this time, most of the conductive connection member is located inside the dielectric layer, which should also be understood as the case where the conductive connection member is located within the dielectric layer.

[0022] In specific implementation, the first connection portion and the conductive connection member can be made of a metal material or other conductive materials. Due to the limitations of the manufacturing process, the thickness of the first connection portion and the conductive connection member is limited. In the embodiments of the present application, a plurality of stacked connection portions can be provided in the dielectric layer. For example, a second connection portion stacked with the first connection portion can be provided in the dielectric layer, and the second connection portion is located between the first connection portion and the semiconductor substrate. The control element can be electrically connected to the conductive connection member through the first connection portion and the second connection portion. In some cases, more connection portions can be provided in the dielectric layer. For example, a third connection portion, a fourth connection portion, a fifth connection portion, etc. stacked with the first connection portion can also be provided. The number of connection portions can be reasonably set according to the height of the first sub-electrode. Specifically, a plurality of conductive connection holes are provided in the dielectric layer. The control element can be electrically connected to the connection portion through the conductive connection hole, and two adjacent connection portions can be electrically connected through the conductive connection hole. For example, the first connection portion and the second connection portion can be electrically connected through the conductive connection hole, and the first connection portion can be electrically connected to the conductive connection member through the conductive connection hole. In some cases, the first connection portion can also be directly in contact connection with the conductive connection member, which can be set according to the actual situation.

[0023] In the manufacturing process, a control element can be fabricated using the front end of line (FEOL) process, the film layers such as each connection part, conductive connection member, dielectric layer, and protective layer can be fabricated using the back end of line process, and the second sub-electrode can be fabricated using a process such as electroplating. Thus, the limitations of the back end of line process can be overcome to fabricate the second sub-electrode electrically connected to the first sub-electrode, increasing the height of the electrode. When the first sub-electrode includes a plurality of sheet electrodes, each sheet electrode can be disposed on the same layer as each connection part. In this way, in the manufacturing process, each sheet electrode can be fabricated using the back end of line process, and moreover, the sheet electrodes and connection parts of the same film layer can be fabricated using the same lithography process to reduce the process steps.

[0024] In some other embodiments of the present application, the electrode can be a strip-shaped electrode arranged along a first direction, and the strip-shaped electrode can be an integral structure, that is, the strip-shaped electrode is a component fabricated by an integral molding process. Moreover, a part of the strip-shaped electrode is located within the dielectric layer, and another part of the strip-shaped electrode is located within the semiconductor substrate. In the embodiments of the present application, by setting the electrode as a strip-shaped electrode arranged along the first direction, the height of the electrode can be increased, thereby improving the correction ability and reliability of the independent electron beam correction chip. In specific implementation, in order to prevent the material in the electrode from falling off from the back surface, the electrode can be set not to penetrate the semiconductor substrate, that is, the lower surface of the electrode is covered by the semiconductor substrate. Of course, in some cases, the electrode can also be only located within the dielectric layer, and the height of the electrode can be set according to actual power requirements.

[0025] In the manufacturing process, the through silicon via (TSV) process can be used to fabricate the electrode. Specifically, a blind hole penetrating the dielectric layer and part of the semiconductor substrate can be fabricated first, and then a conductive material, such as a metal material such as aluminum, copper, or tungsten, can be filled in the blind hole to obtain the electrode. In this way, the consistency of the fabricated electrodes is relatively good, so that the uniformity of the electric field formed by each electrode is relatively good. Moreover, multiple electrodes can be fabricated using the same process, and the manufacturing process is relatively simple and the manufacturing efficiency is relatively high. In the embodiments of the present application, by setting the electrode as a strip-shaped electrode arranged along the first direction, the height of the electrode can reach the level of 100 μm, which can greatly increase the height of the electrode and effectively reduce the working voltage and power consumption of the independent electron beam correction chip.

[0026] Furthermore, in an embodiment of the present application, the first through hole may include: a first part and a second part that are interconnected, the first part is located above the second part, and the aperture of the second part is larger than the aperture of the first part. During the operation of the independent electron beam correction chip, the electron beam passes through the first through hole from the front side and then is emitted from the back side, wherein the front side refers to the side of the independent electron beam correction chip having a dielectric layer, and the back side refers to the side of the independent electron beam correction chip having a semiconductor substrate. In an embodiment of the present application, the aperture of the second part in the first through hole is larger than the aperture of the first part, which can avoid the electron charging effect caused by charge accumulation. Specifically, since the independent electron beam correction chip is thicker as a whole, it is easy for the electron beam to hit the inner wall of the first through hole during the process of passing through the first through hole. By setting the aperture of the second part of the first through hole to be larger than the aperture of the first part, the corrected electron beam can be prevented from being emitted to the semiconductor substrate as much as possible, and more of it can be emitted to the object to be measured below, thereby improving the efficiency and resolution of detection.

[0027] During the manufacturing process, the dielectric layer and the electrode components can be manufactured on the front side of the semiconductor substrate first, and then the semiconductor substrate is turned over and the second part of the first through hole is formed on the back side of the semiconductor substrate using a micro electro mechanical systems (MEMS) process.

[0028] In a possible implementation, the second portion of the first through hole is located below the electrode, and in the first direction, the electrode and the second portion of the first through hole are separated by a portion of the semiconductor substrate material. In other words, the lower surface of the electrode is covered by the semiconductor substrate, thereby preventing the material in the electrode from falling off.

[0029] In a possible implementation, in a direction perpendicular to the surface of the semiconductor substrate, a second through hole penetrating the semiconductor substrate and the dielectric layer may further be provided. The independent electron beam correction chip may further include: a second electrode group, and the second electrode group may include: a plurality of electrodes disposed around the second through hole. The second through hole includes: a third part and a fourth part that communicate with each other. The third part is located above the fourth part, and the aperture of the fourth part is larger than that of the third part. For the specific setting manner of the second through hole, reference may be made to the specific setting manner of the first through hole above. For the specific setting manner of the second electrode group, reference may be made to the specific setting manner of the first electrode group above, and repeated parts will not be elaborated. The second part of the first through hole communicates with the fourth part of the second through hole, so that a through hole with a larger aperture can be formed on the back surface of the semiconductor substrate. Thus, the electron charging effect caused by charge accumulation can be more effectively avoided. Of course, in some cases, the lower parts of more through holes in the independent electron beam correction chip may be set to communicate with each other. For example, the lower parts of all through holes in the independent electron beam correction chip may be set to communicate with each other, which can be set according to actual needs.

[0030] In a second aspect, an embodiment of the present application further provides an electron beam detection device. The electron beam detection device provided by the embodiment of the present application may include: an electron beam source and any one of the independent electron beam correction chips in the first aspect above. The electron beam source is disposed above the dielectric layer in the independent electron beam correction chip. The electron beam source is configured to emit an electron beam in a direction towards the independent electron beam correction chip. The electron beam passes through the first through hole in the independent electron beam correction chip and then irradiates a to-be-detected object. The independent electron beam correction chip is configured to correct the electron beam passing through the first through hole by applying a voltage to the first electrode group. For example, parameters such as the angle, position, and astigmatism of the electron beam can be corrected. In the embodiment of the present application, one, two, three, or more independent electron beam correction chips may be provided in the electron beam detection device. In specific implementation, the number of independent electron beam correction chips may be set according to the actual power requirement of the electron beam detection device.

[0031] Since the independent electron beam correction chip provided by the embodiment of the present application overcomes the limitations of the back-end process, the height of the electrodes in the independent electron beam correction chip can be increased, thereby improving the correction ability of the independent electron beam correction chip. In addition, since the height of the electrodes is increased, the control path of the electron beam by the independent electron beam correction chip can be longer. During the operation of the independent electron beam correction chip, the working voltage can be reduced, thereby reducing the power consumption of the electron correction chip and improving the reliability of the independent electron beam correction chip. Therefore, the correction ability and reliability of the independent electron beam correction chip provided by the embodiment of the present application are both relatively high, which can make the measurement efficiency, resolution, and reliability of the electron beam detection device provided by the embodiment of the present application relatively high.

[0032] In a third aspect, an embodiment of the present application further provides a method for manufacturing an independent electron beam correction chip. The method for manufacturing the independent electron beam correction chip provided by the embodiment of the present application may include:

[0033] Step 1: Provide a semiconductor substrate;

[0034] Step 2: Form a dielectric layer and a plurality of electrodes on the semiconductor substrate. Wherein, a part of each electrode is located within the dielectric layer, and another part of each electrode protrudes from the dielectric layer in a first direction; the first direction is perpendicular to the surface of the semiconductor substrate; the first direction may be a direction perpendicular to the surface of the semiconductor substrate and upward, or the first direction may also be a direction perpendicular to the surface of the semiconductor substrate and downward;

[0035] Step 3: Etch the semiconductor substrate and the dielectric layer to form a first through hole that penetrates the semiconductor substrate and the dielectric layer in the first direction; the first through hole is surrounded by a plurality of electrodes.

[0036] The method for manufacturing the independent electron beam correction chip provided by the embodiment of the present application can overcome the limitations of the back-end process. The manufactured electrodes have a part located within the dielectric layer and a part protruding from the dielectric layer in a direction perpendicular to the surface of the semiconductor substrate, thereby increasing the height of the electrodes, improving the correction ability of the independent electron beam correction chip, reducing the power consumption of the independent electron beam correction chip, and improving the reliability of the independent electron beam correction chip.

[0037] In some embodiments of the present application, the electrode may include a first sub-electrode and a second sub-electrode arranged in layers. In the above step 2, a plurality of first sub-electrodes located below the upper surface of the dielectric layer may be formed first, and at least a part of each first sub-electrode is located within the dielectric layer. Then, an electroplating process is used to form a plurality of second sub-electrodes on the film layer where the first sub-electrodes are located, and each second sub-electrode is electrically connected to the first sub-electrode.

[0038] In a possible implementation manner, when the first sub-electrode includes a plurality of sheet electrodes arranged in layers, in the above step 2, film layers such as each connecting portion, each sheet electrode, a conductive connecting member, a dielectric layer, and a protective layer are manufactured by a back-end process. The sheet electrodes and the connecting portions of the same film layer may be manufactured by the same lithography process to reduce the process steps. Remove the dielectric layer and the protective layer at the positions where the second sub-electrodes to be formed are located. Then, an electroplating process is used to form a plurality of second sub-electrodes on the film layer where the first sub-electrodes are located, and each second sub-electrode is electrically connected to a first sub-electrode.

[0039] In another possible implementation, when the first sub-electrode is a strip-shaped integral structure, in the above step two, the connection parts and part of the dielectric layer are fabricated by a back-end process. Then, a plurality of blind holes penetrating the dielectric layer and part of the semiconductor substrate (or only penetrating the dielectric layer) are fabricated. Conductive materials, such as metal materials like aluminum, copper, tungsten, etc., are filled in each blind hole to obtain a plurality of first sub-electrodes. After that, a conductive connection part, part of the dielectric layer, and a protective layer are formed on the film layer where the first sub-electrodes are located. The dielectric layer and the protective layer at the positions where the second sub-electrodes are to be formed are removed. Then, a plurality of second sub-electrodes are formed on the film layer where the first sub-electrodes are located by an electroplating process, and each second sub-electrode is electrically connected to one first sub-electrode.

[0040] In some other embodiments of the present application, when the electrode is a strip-shaped integral structure consistent with the extending direction of the first through hole, in the above step two, a through silicon via (TSV) process can be used to fabricate the electrode. Specifically, an etching process is adopted to form a plurality of blind holes penetrating the dielectric layer and part of the semiconductor substrate (or only penetrating the dielectric layer). Conductive materials, such as metal materials like aluminum, copper, tungsten, etc., are filled in each blind hole to obtain a plurality of electrodes. In this way, the consistency of the fabricated electrodes is relatively good, so that the uniformity of the electric field formed by each electrode is relatively good. Moreover, multiple electrodes can be fabricated by the same process, and the fabrication process is relatively simple and the fabrication efficiency is relatively high. After forming a plurality of electrodes, a conductive connection part is formed on the film layer where the electrodes are located, so that the electrodes are electrically connected to the control element through the conductive connection part.

[0041] In the above step three, an etching process is adopted to etch film layers such as the protective layer, the dielectric layer, and the semiconductor substrate to form a first through hole penetrating the independent electron beam correction chip in a direction perpendicular to the surface of the semiconductor substrate, and an independent electron beam correction chip is obtained.

[0042] In addition, after the above step three, the semiconductor substrate can be turned over, and a second part of the first through hole is formed on the back surface of the semiconductor substrate by a microelectro mechanical systems (MEMS) process. When the semiconductor substrate has a plurality of through holes, the lower parts of the plurality of through holes can form an opening with a relatively large aperture. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 is a schematic structural diagram of an electron beam detection device provided by an embodiment of the present application;

[0044] Figure 2 is a top view structural diagram of an independent electron beam correction chip provided by an embodiment of the present application;

[0045] Figure 3Another top view structure schematic diagram of the independent electron beam correction chip provided by the embodiment of the present application;

[0046] Figure 4 Another top view structure schematic diagram of the independent electron beam correction chip provided by the embodiment of the present application;

[0047] Figure 5 Is Figure 4 The cross-sectional schematic diagram at the dashed line AA' in

[0048] Figure 6 Another top view structure schematic diagram of the independent electron beam correction chip provided by the embodiment of the present application;

[0049] Figure 7 Is Figure 6 The cross-sectional schematic diagram at the dashed line BB' in

[0050] Figure 8 Is Figure 6 Another cross-sectional schematic diagram at the dashed line BB' in

[0051] Figure 9 Another top view structure schematic diagram of the independent electron beam correction chip provided by the embodiment of the present application;

[0052] Figure 10 Is Figure 9 The cross-sectional schematic diagram at the dashed line CC' in

[0053] Figure 11 The flowchart of the manufacturing method of the independent electron beam correction chip provided by the embodiment of the present application;

[0054] Figures 12 to 16 The structure schematic diagrams of the steps in the manufacturing method provided by the embodiment of the present application.

[0055] Reference numerals:

[0056] 100 - Electron beam source; 200 - Independent electron beam correction chip; 21 - Semiconductor substrate; 22 - Dielectric layer; 23m - First electrode group; 23n - Second electrode group; 23 - Electrode; 231 - First sub-electrode; 231a - Sheet electrode; 232 - Second sub-electrode; 241 - First connection part; 242 - Second connection part; 243 - Third connection part; 244 - Fourth connection part; 245 - Fifth connection part; 25 - Conductive connection piece; 26 - Control element; 27 - Protective layer; 300 - Electron beam; T - Through hole; T1 - First through hole; T2 - Second through hole; t1 - First part; t2 - Second part; t3 - Third part; t4 - Fourth part; V - Conductive connection hole; U - Opening. Detailed implementation manners

[0057] In the field of electron beam detection, multi-electron beam detection devices have high measurement efficiency and resolution. However, for multi-electron beam detection devices, the electron beams emitted by the electron beam source need to pass through multiple through-holes in an independent electron beam correction chip, which requires a high functional consistency of the multiple through-holes in the independent electron beam correction chip. Generally, the more the number of through-holes, the higher the requirement for the morphology consistency of each through-hole and the electrode morphology.

[0058] In related technologies, an independent electron beam correction chip is usually fabricated using micro electro mechanical systems (MEMS) technology, and the metal layer fabricated using the back end of line (BEOL) process is used as an electrode to control the trajectory of the electron beam. Due to the limitations of the BEOL process, the height of the electrodes in the independent electron beam correction chip cannot be increased further. Generally, the electrode height is below 10 μm, resulting in limited correction ability of the independent electron beam correction chip. Moreover, it will cause a relatively high working voltage of the independent electron beam correction chip, leading to a relatively high power consumption of the independent electron beam correction chip and affecting the reliability of the independent electron beam correction chip.

[0059] Based on this, in order to improve the correction ability and reliability of the independent electron beam correction chip, the embodiments of the present application provide an independent electron beam correction chip, a manufacturing method thereof, and an electron beam detection device. The electron beam detection device provided by the embodiments of the present application can be applied to semiconductor manufacturing processes such as electron beam lithography, defect detection, and dimension measurement. Exemplarily, the electron beam detection device in the embodiments of the present application can be an inspection device, a scanning electron microscope (SEM), etc. Among them, the scanning electron microscope can be a critical dimension scanning electron microscope (CD-SEM). The independent electron beam correction chip in the embodiments of the present application can independently adjust each electron beam. The independent electron beam correction chip provided by the embodiments of the present application can be applied to a multi-electron beam detection device with a single electron source or a single-electron beam detection device with a single electron source.

[0060] In order to make the purpose, technical solutions, and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings.

[0061] It should be noted that the same reference numerals in the drawings of the present application denote the same or similar structures, and thus the repeated description thereof will be omitted. The words expressing positions and directions described in the present application are illustrated by taking the drawings as examples, but can be changed according to needs, and all the changes made are included in the protection scope of the present application. The drawings of the present application are only used to illustrate the relative positional relationship and do not represent the true proportion.

[0062] Figure 1 The following is a schematic structural diagram of the electron beam detection device provided by an embodiment of the present application. As Figure 1 shown, the electron beam detection device provided by an embodiment of the present application may include: an electron beam source 100 and an independent electron beam correction chip 200. The electron beam source 100 is disposed above the independent electron beam correction chip 200. The electron beam source 100 is used to emit an electron beam 300 in the direction towards the independent electron beam correction chip 200. The electron beam 300 passes through the through hole T in the independent electron beam correction chip 200 and then shoots towards the object to be measured. The independent electron beam correction chip 200 can correct the electron beam 300 passing through the through hole T. For example, parameters such as the angle, position, and astigmatism of the electron beam 300 can be corrected. In the embodiment of the present application, one, two, three or more independent electron beam correction chips 200 may be provided in the electron beam detection device. For example Figure 1 the case where two independent electron beam correction chips 200 are provided in the electron beam detection device is taken as an example for illustration. In specific implementation, the number of independent electron beam correction chips 200 can be set according to the actual power requirement of the electron beam detection device.

[0063] Since the independent electron beam correction chip 200 provided by the embodiment of the present application overcomes the limitations of the back-end process, the height of the electrodes in the independent electron beam correction chip 200 can be increased, thereby improving the correction ability of the independent electron beam correction chip 200. In addition, since the height of the electrodes is increased, the control path of the independent electron beam correction chip 200 for the electron beam can be longer. During the operation of the independent electron beam correction chip 200, the working voltage can be reduced, thereby reducing the power consumption of the electron correction chip 200 and improving the reliability of the independent electron beam correction chip 200. Therefore, the correction ability and reliability of the independent electron beam correction chip 200 provided by the embodiment of the present application are both relatively high, and the measurement efficiency, resolution and reliability of the electron beam detection device provided by the embodiment of the present application can be relatively high.

[0064] Figure 2 The following is a top view structural diagram of the independent electron beam correction chip provided by an embodiment of the present application. As Figure 2As shown, at least one through-hole T is provided in the independent electron beam correction chip 200 in the embodiment of the present application. During operation, the electron beam can pass through the through-hole T and shoot towards the object to be measured. A plurality of electrodes 23 are arranged around each through-hole T, and each electrode 23 can form an electric field at the position of the through-hole T, so as to correct the electron beam passing through the through-hole T. In a possible implementation manner, the independent electron beam correction chip 200 in the embodiment of the present application may include a plurality of through-holes T, that is, the number of through-holes T may be greater than 1. The independent electron beam correction chip 200 in the embodiment of the present application can be applied to a single electron source and multi-electron beam detection device. Figure 3 Another top view structural diagram of the independent electron beam correction chip provided by the embodiment of the present application, as Figure 3 shown, in another possible implementation manner, the independent electron beam correction chip 200 in the embodiment of the present application may also include only one through-hole T, and the independent electron beam correction chip 200 in the embodiment of the present application can be applied to a single electron source and single electron beam detection device.

[0065] Figure 4 Another top view structural diagram of the independent electron beam correction chip provided by the embodiment of the present application, Figure 5 is Figure 4 a cross-sectional view taken along the dashed line AA' in Figure 4 and Figure 5 , the independent electron beam correction chip 200 provided by the embodiment of the present application may include: a semiconductor substrate 21, a dielectric layer 22, and a first electrode group 23m. The dielectric layer 22 is disposed on the semiconductor substrate 21. A first through-hole T1 penetrating the semiconductor substrate 21 and the dielectric layer 22 is provided along a first direction F1, and the first direction F1 is a direction perpendicular to the surface of the semiconductor substrate 21. In the drawings of the present application, an upward arrow is used to indicate the first direction F1, and actually the first direction F1 may also be a direction perpendicular to the semiconductor substrate 21 and downward. That is to say, in the embodiment of the present application, the first direction F1 may be a direction perpendicular to the surface of the semiconductor substrate 21 and upward, or the first direction F1 may also be a direction perpendicular to the surface of the semiconductor substrate 21 and downward. The first electrode group 23m includes: a plurality of electrodes 23 arranged around the first through-hole T1. Each electrode 23 in the first electrode group 23m can be evenly distributed around the first through-hole T1. Figure 4 In Figure 4Taking the cross-sectional shape of the middle electrode 23 as a trapezoid as an example for illustration, in specific implementation, the cross-section of the electrode 23 can also be circular, rectangular, fan-shaped or other shapes. During the operation of the independent electron beam correction chip 200, the electron beam passes through the first through-hole T1 and shoots towards the object to be measured. Each electrode 23 can form an electric field at the position of the first through-hole T1, so as to correct the electron beam passing through the first through-hole T1.

[0066] In the embodiment of the present application, the first through-hole T1 penetrates the independent electron beam correction chip 200 in the first direction F1. In specific implementation, in addition to penetrating the semiconductor substrate 21 and the dielectric layer 22, the first through-hole T1 may also penetrate other film layers in the independent electron beam correction chip 200. Exemplarily, the independent electron beam correction chip 200 may further include: a protective layer 27 located above the dielectric layer 22, and the first through-hole T1 can penetrate the semiconductor substrate 21, the dielectric layer 22 and the protective layer 27 in the first direction F1.

[0067] The independent electron beam correction chip 200 in the embodiment of the present application may include one or more through-holes T. When the independent electron beam correction chip 200 includes multiple through-holes T, for example, the independent electron beam correction chip 200 may further include a second through-hole, a third through-hole, etc. The specific setting method of other through-holes T can refer to the setting of the first through-hole T, and the repeated parts will not be described again.

[0068] Continue to refer to Figure 4 and Figure 5 , in the embodiment of the present application, a part of each electrode 23 is located in the dielectric layer 22, and the other part of each electrode 23 protrudes from the dielectric layer 22 in the first direction F1. Optionally, the electrode 23 may protrude upward from the dielectric layer 22 along the first direction F1, or the electrode 23 may also protrude downward from the dielectric layer 22 along the first direction F1.

[0069] It should be noted that the orientation-related expressions such as "above", "below", "upward", "downward", "upper surface", "lower surface", etc. in the embodiment of the present application are all based on the Figure 5 shown perspective (or the same perspective as Figure 5 ) for description, which is to facilitate the description of the relative position relationship between two components, and does not indicate or imply that a certain component must be in a specific orientation. In addition, in the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0070] In the independent electron beam correction chip provided by the embodiments of the present application, a part of each electrode 23 is located within the dielectric layer 22, and another part of each electrode 23 protrudes from the dielectric layer 22 in the first direction F1. During the manufacturing process, electroplating process, through silicon via (TSV) process or other processes can be used to manufacture the electrode 23, thereby overcoming the limitations of the back-end process, increasing the height of the electrode 23, and improving the correction ability of the independent electron beam correction chip 200. In addition, by increasing the height of the electrode 23, the control path of the independent electron beam correction chip 200 for the electron beam can be made longer. In this way, during the operation of the independent electron beam correction chip 200, the working voltage can be reduced, thereby reducing the power consumption of the electron correction chip 200 and improving the reliability of the independent electron beam correction chip 200. Therefore, the correction ability and reliability of the independent electron beam correction chip 200 provided by the embodiments of the present application are both relatively high.

[0071] In some embodiments of the present application, as Figure 4 and Figure 5 shown, the electrode 23 may include: a first sub-electrode 231 and a second sub-electrode 232 which are stacked and electrically connected, and the second sub-electrode 232 is located above the first sub-electrode 231. At least a part of the first sub-electrode 231 is located within the dielectric layer 22, and in the first direction F1, the first sub-electrode 231 does not exceed the upper surface of the dielectric layer 22, and at least a part of the second sub-electrode 232 protrudes from the upper surface of the dielectric layer 22. That is to say, the first sub-electrode 231 may be located below the upper surface of the dielectric layer 22, a part of the second sub-electrode 232 is located within the dielectric layer 22, and another part of the second sub-electrode 232 protrudes from the upper surface of the dielectric layer 22; or, the upper surface of the first sub-electrode 231 may be flush with the upper surface of the dielectric layer 22, and the second sub-electrode 232 completely protrudes from the upper surface of the dielectric layer 22. In a specific implementation, the first sub-electrode 231 is located on the inner wall of the first through hole T1, and the surface of the first sub-electrode 231 facing the inside of the first through hole T1 may be covered by the dielectric layer 22. Of course, the surface of the first sub-electrode 231 facing the inside of the first through hole T1 may also be exposed, which can be set according to actual needs.

[0072] In a possible implementation manner, other film layers may also be provided above the dielectric layer 22, and in the first direction F1, the second sub-electrode 232 may also protrude from other film layers above the dielectric layer 22. Exemplarily, a protective layer 27 may be provided above the dielectric layer 22. In the first direction, the first through hole T1 penetrates through the protective layer 27, and the second sub-electrode 232 protrudes from the upper surface of the protective layer 27.

[0073] During the manufacturing process, an electroplating process can be used to fabricate the second sub-electrode 232. Thus, the limitations of the back-end process can be overcome, the height of the electrode can be increased, and the correction ability of the independent electron beam correction chip can be improved. Exemplarily, the height of the first sub-electrode 231 can be about 10 μm, and the height of the second sub-electrode 232 can be about 20 μm. Compared with the prior art where the back-end process can only fabricate electrodes within 10 μm, the embodiments of the present application can significantly increase the height of the electrodes.

[0074] In a specific implementation, both the first sub-electrode 231 and the second sub-electrode 232 in the electrode 23 can include metal materials. Exemplarily, the first sub-electrode 231 can include at least one of aluminum, copper, and tungsten, and the second sub-electrode 232 can include at least one of gold, tungsten, and copper. Of course, in some cases, the first sub-electrode 231 and the second sub-electrode 232 can also include other metal materials or other conductive materials.

[0075] As Figure 4 and Figure 5 shown, in a possible implementation, the first sub-electrode 231 can include: a plurality of sheet electrodes 231a located within the dielectric layer 22. The thickness of the sheet electrode 231a is relatively thin. Exemplarily, the thickness of the sheet electrode 231a can be significantly less than the width of the electrode 23 in the horizontal direction (i.e., the direction parallel to the surface of the semiconductor substrate 21). A plurality of conductive vias V are also provided in the dielectric layer 22. Each conductive via V is located between two adjacent components in the first direction F1, and the conductive via V is used to electrically connect two adjacent components in the first direction F1. The sheet electrodes 231a are stacked, and at least one conductive via V provided in the dielectric layer 22 is used to electrically connect every two adjacent sheet electrodes 231a. In Figure 5 , an example is schematically shown where every two adjacent sheet electrodes 231a are electrically connected by two conductive vias V. In a specific implementation, two adjacent sheet electrodes 231a can also be electrically connected by one, three, or more conductive vias V. In a specific implementation, the sheet electrode 231a can include metal materials such as aluminum and copper. The first sub-electrode 231 is composed of a plurality of stacked sheet electrodes 231a, which can make the height of the first sub-electrode 231 relatively large. During the manufacturing process, each sheet electrode 231a can be fabricated layer by layer using the back-end process to obtain the first sub-electrode 231 with a relatively large height.

[0076] Figure 6 Another top view structural diagram of the independent electron beam correction chip provided by the embodiments of the present application Figure 7 is Figure 6 the cross-sectional view at the dashed line BB' in Figure 6 and Figure 7, In another possible implementation, the first sub - electrode 231 can be a strip - shaped electrode arranged along the first direction F1. The first sub - electrode 231 can be an integral structure, that is, the first sub - electrode 231 is a component made by an integral molding process. In this way, the height of the first sub - electrode 231 can be relatively large, and the consistency of multiple first sub - electrodes 231 is relatively high. A part of the first sub - electrode 231 is located within the dielectric layer 22, and another part of the first sub - electrode 231 is located within the semiconductor substrate 21. The height of the electrode 23 can be further increased, thereby further improving the correction ability and reliability of the independent electron beam correction chip 200. In specific implementation, in order to prevent the material in the first sub - electrode 231 from falling off from the back surface, the first sub - electrode 231 can be set not to penetrate the semiconductor substrate 21, that is, the lower surface of the first sub - electrode 231 is covered by the semiconductor substrate 21. Of course, in some cases, the first sub - electrode 231 can also be only located within the dielectric layer 22. The heights of the first sub - electrode 231 and the second sub - electrode 232 in the electrode 23 can be set according to actual power requirements.

[0077] During the manufacturing process, the through - silicon via (TSV) process can be used to manufacture the first sub - electrode 231. Specifically, blind holes penetrating the dielectric layer 22 and part of the semiconductor substrate 21 (or only penetrating the dielectric layer 22) can be fabricated first, and then conductive materials, such as metal materials like aluminum, copper, tungsten, etc., can be filled in the blind holes to obtain the first sub - electrode 231. In this way, the consistency of the fabricated first sub - electrodes 231 is good, so that the uniformity of the electric field formed by each electrode 23 is good. Moreover, multiple first sub - electrodes 231 can be fabricated using the same process, and the manufacturing process is relatively simple and the manufacturing efficiency is relatively high. In the embodiments of the present application, setting the first sub - electrode 231 as a strip - shaped electrode arranged along the first direction can make the height of the first sub - electrode 231 reach the level of 100μm, which can significantly increase the height of the electrode 23 and effectively reduce the working voltage and power consumption of the independent electron beam correction chip 200.

[0078] As Figure 5 and Figure 7 shown, in order to apply a voltage to the electrode 23, a control element 26 is provided at a position inside the semiconductor substrate 21 close to the dielectric layer 22. The power supply in the electron beam detection device can be electrically connected to the electrode 23 through the control element 26. Therefore, the voltage applied to the electrode 23 can be controlled through the control element 26, and further the electric field formed at the first through - hole T1 can be controlled. Exemplarily, the control element 26 can be a transistor or other devices.

[0079] To electrically connect the control element 26 to the electrode 23, the independent electron beam correction chip in the embodiment of the present application may further include: a first connection portion 241 located in the dielectric layer 22 and a conductive connection member 25, and the conductive connection member 25 is located above the first connection portion 241 and the first sub-electrode 231. The control element 26 is electrically connected to the conductive connection member 25 through the first connection portion 241, and the conductive connection member 25 is electrically connected to the first sub-electrode 231. The second sub-electrode 232 is located above the conductive connection member 25, and the second sub-electrode 232 is in contact connection with the conductive connection member 25. In this way, the control element 26 can apply a voltage to the electrode 23 through the first connection portion 241 and the conductive connection member 25 to form an electric field at the position of the first through hole T1, and the voltage output by the control element 26 can act on both the first sub-electrode 231 and the second sub-electrode 232 at the same time, so as to achieve the effect of increasing the height of the electrode 23. It can be understood that in some cases, the side surface of the conductive connection member 25 close to the first through hole T1 may not be covered by the dielectric layer 22, that is, the surface of the conductive connection member 25 close to the inside of the first through hole T1 may be exposed. At this time, most of the conductive connection member 25 is located inside the dielectric layer 22, which should also be understood as the case where the conductive connection member 25 is located in the dielectric layer 22.

[0080] In specific implementation, the first connection portion 241 and the conductive connection member 25 can be made of a metal material or other conductive materials. Due to the limitations of the manufacturing process, the thicknesses of the first connection portion 241 and the conductive connection member 25 are limited. In the embodiment of the present application, a plurality of stacked connection portions can be provided in the dielectric layer 22. For example, a second connection portion 242 stacked with the first connection portion 241 can be provided in the dielectric layer 22, and the second connection portion 242 is located between the first connection portion 241 and the semiconductor substrate 21. The control element 26 can be electrically connected to the conductive connection member 25 through the first connection portion 241 and the second connection portion 242. In some cases, more connection portions can be provided in the dielectric layer 22. For example, a third connection portion 243, a fourth connection portion 244, a fifth connection portion 245, etc. stacked with the first connection portion 241 can also be provided, and the number of connection portions can be reasonably set according to the height of the first sub-electrode 231. Specifically, a plurality of conductive connection holes V are provided in the dielectric layer 22. The control element 26 can be electrically connected to the connection portion through the conductive connection hole V, and adjacent two connection portions can be electrically connected through the conductive connection hole V. For example, the first connection portion 241 and the second connection portion 242 can be electrically connected through the conductive connection hole V, and the first connection portion 241 can be electrically connected to the conductive connection member 25 through the conductive connection hole V. In some cases, the first connection portion 241 can also be directly in contact connection with the conductive connection member 25, which can be set according to the actual situation.

[0081] During the manufacturing process, the control element 26 can be fabricated using the front end of line (FEOL) process, and the film layers such as the connection parts, the conductive connection member 25, the dielectric layer 22, and the protective layer 27 can be fabricated using the back end of line process. The second sub-electrode 232 can be fabricated using a process such as electroplating. Thus, the limitations of the back end of line process can be overcome, the second sub-electrode 232 electrically connected to the first sub-electrode 231 can be fabricated, and the height of the electrode 23 can be increased. As Figure 5 shown, when the first sub-electrode 231 includes a plurality of sheet electrodes 231a, each sheet electrode 231a can be disposed in the same layer as each connection part. In this way, during the manufacturing process, each sheet electrode 231a can be fabricated using the back end of line process, and moreover, the sheet electrodes 231a and the connection parts of the same film layer can be fabricated using the same lithography process to reduce the process steps.

[0082] In some other embodiments of the present application, in combination with Figure 6 and Figure 8 , Figure 8 is Figure 6 Another cross-sectional schematic view at the dashed line BB' in. The electrode 23 can be a strip-shaped electrode arranged along the first direction F1. The strip-shaped electrode can be an integral structure, that is, the strip-shaped electrode is a component fabricated by an integral molding process. And, a part of the strip-shaped electrode is located within the dielectric layer 22, and another part of the strip-shaped electrode is located within the semiconductor substrate 21. In the embodiments of the present application, by setting the electrode 23 as a strip-shaped electrode arranged along the first direction, the height of the electrode 23 can be increased, thereby improving the correction ability and reliability of the independent electron beam correction chip 200. In specific implementation, in order to prevent the material in the electrode 23 from falling off from the back surface, the electrode 23 can be set not to penetrate the semiconductor substrate 21, that is, the lower surface of the electrode 23 is covered by the semiconductor substrate 21. Of course, in some cases, the electrode 23 can also be only located within the dielectric layer 22, and the height of the electrode 23 can be set according to the actual power requirement.

[0083] During the manufacturing process, the electrode 23 can be fabricated using the through silicon via (TSV) process. Specifically, a plurality of blind holes penetrating the dielectric layer 22 and part of the semiconductor substrate 21 can be fabricated first, and then, a conductive material, such as a metal material such as aluminum, copper, or tungsten, can be filled in each blind hole to obtain a plurality of electrodes 23. In this way, the consistency of the fabricated electrodes 23 is better, so that the uniformity of the electric field formed by the electrodes 23 is better. Moreover, a plurality of electrodes 23 can be fabricated using the same process, and the manufacturing process is relatively simple and the manufacturing efficiency is relatively high. In the embodiments of the present application, by setting the electrode 23 as a strip-shaped electrode arranged along the first direction F1, the height of the electrode 23 can reach the level of 100 μm, which can greatly increase the height of the electrode and effectively reduce the working voltage and power consumption of the independent electron beam correction chip 200.

[0084] Further, referring to Figure 7 and Figure 8 , in the embodiment of the present application, the first through hole T1 may include a first part t1 and a second part t2 that communicate with each other. The first part t1 is located above the second part t2, and the aperture of the second part t2 is larger than that of the first part t1. During the operation of the independent electron beam correction chip 200, the electron beam passes through the first through hole T1 from the front and exits from the back. Here, the front refers to the side of the independent electron beam correction chip 200 with the dielectric layer 22 (i.e., Figure 7 and Figure 8 the upper surface shown), and the back refers to the side of the independent electron beam correction chip 200 with the semiconductor substrate 21 (i.e., Figure 7 and Figure 8 the lower surface shown). In the embodiment of the present application, the aperture of the second part t2 in the first through hole T1 is larger than that of the first part t1, which can avoid the electron charging effect caused by charge accumulation. Specifically, since the overall thickness of the independent electron beam correction chip 200 is relatively large, during the process of the electron beam passing through the first through hole T1, it is easy to hit the inner wall of the first through hole T1. By setting the aperture of the second part t2 of the first through hole T1 to be larger than that of the first part t1, the corrected electron beam can be made to no longer hit the semiconductor substrate 21 as much as possible and more hit the object to be measured below, thereby improving the detection efficiency and resolution.

[0085] During the manufacturing process, components such as the dielectric layer 22 and the electrode 23 can be fabricated on the front of the semiconductor substrate 21 first. Then, the semiconductor substrate 21 is turned over, and the second part t2 of the first through hole T1 is formed on the back of the semiconductor substrate 21 using micro electro mechanical systems (MEMS) technology.

[0086] In a possible implementation, the second part t2 of the first through hole T1 is located below the electrode 23. In the first direction, the electrode 23 and the second part t2 of the first through hole T1 are separated by the semiconductor substrate 21 material. That is, the lower surface of the electrode 23 is covered by the semiconductor substrate 21, thereby preventing the material in the electrode 23 from falling off.

[0087] Figure 9 is another top view structural schematic diagram of the independent electron beam correction chip provided by the embodiment of the present application, Figure 10 is Figure 9 the cross-sectional schematic diagram at the dashed line CC' in Figure 9 and Figure 10, in the implementation of this application, in the first direction, a second through-hole T2 penetrating the semiconductor substrate 21 and the dielectric layer 22 may further be provided. The independent electron beam correction chip 200 may further include: a second electrode group 23n, and the second electrode group 23n may include: a plurality of electrodes 23 arranged around the second through-hole T2. The second through-hole T2 includes: a third part t3 and a fourth part t4 that communicate with each other. The third part t3 is located above the fourth part t4, and the aperture of the fourth part t4 is larger than that of the third part t3. For the specific setting manner of the second through-hole T2, reference may be made to the specific setting manner of the above-mentioned first through-hole T1. For the specific setting manner of the second electrode group 23n, reference may be made to the specific setting manner of the above-mentioned first electrode group 23m, and the repeated parts will not be elaborated here. The second part t2 of the first through-hole T1 communicates with the fourth part t4 of the second through-hole T2. In this way, a larger-aperture opening U can be formed on the back surface of the semiconductor substrate 21. Thus, the electron charging effect caused by charge accumulation can be more effectively avoided. Of course, in some cases, the lower parts of more through-holes T in the independent electron beam correction chip 200 may be set to communicate with each other. For example, the lower parts of all through-holes T in the independent electron beam correction chip may be set to communicate with each other, which can be set according to actual needs. Based on the same inventive concept, an embodiment of this application also provides a method for manufacturing an independent electron beam correction chip, Figure 11 is a flowchart of the method for manufacturing an independent electron beam correction chip provided by an embodiment of this application, as Figure 11 shown, the method for manufacturing an independent electron beam correction chip provided by an embodiment of this application may include:

[0088] S401. Provide a semiconductor substrate;

[0089] S402. Form a dielectric layer on the semiconductor substrate and form a plurality of electrodes; wherein, a part of each electrode is located within the dielectric layer, and the other part of each electrode protrudes from the dielectric layer in the first direction; the first direction is a direction perpendicular to the surface of the semiconductor substrate; the first direction may be a direction perpendicular to the surface of the semiconductor substrate and upward, or the first direction may also be a direction perpendicular to the surface of the semiconductor substrate and downward;

[0090] S403. Etch the semiconductor substrate and the dielectric layer to form a first through-hole penetrating the semiconductor substrate and the dielectric layer in the first direction; the first through-hole is surrounded by a plurality of electrodes.

[0091] The manufacturing method of the independent electron beam correction chip provided by the embodiments of the present application can overcome the limitations of the back-end process. The manufactured electrode has a part located within the dielectric layer and a part protruding from the dielectric layer in the direction perpendicular to the surface of the semiconductor substrate, thereby increasing the height of the electrode, improving the correction ability of the independent electron beam correction chip, reducing the power consumption of the independent electron beam correction chip, and improving the reliability of the independent electron beam correction chip.

[0092] Figures 12 to 16 is a schematic structural diagram of each step in the manufacturing method provided by the embodiments of the present application. As Figure 12 shown, after the above step S401 and before step S402, a front end of line (FEOL) process can be used to fabricate a control element 26 on the surface of the semiconductor substrate 21.

[0093] In some embodiments of the present application, the electrode 23 may include a first sub-electrode 231 and a second sub-electrode 232 arranged in a stacked manner. In the above step S402, referring to Figure 12 , a plurality of first sub-electrodes 231 located below the upper surface of the dielectric layer 22 can be formed first, and at least a part of each first sub-electrode 231 is located within the dielectric layer 22. Then, referring to Figure 13 , an electroplating process is used to form a plurality of second sub-electrodes 232 on the film layer where the first sub-electrodes 231 are located, and each second sub-electrode 232 is electrically connected to the first sub-electrode 231.

[0094] In a possible implementation manner, when the first sub-electrode 231 includes a plurality of sheet-like electrodes 231a arranged in a stacked manner, in the above step S402, as Figure 12 shown, a back-end process is used to fabricate film layers such as each connection part (the first connection part 241, the second connection part 242, the third connection part 243, the fourth connection part 244, the fifth connection part 245, etc.), each sheet-like electrode 231a, the conductive connection member 25, the dielectric layer 22, and the protective layer 27. The sheet-like electrodes 231a and the connection parts arranged in the same layer can be fabricated by using the same lithography process to reduce the process steps. As Figure 13 shown, the dielectric layer 22 and the protective layer 27 at the positions where the second sub-electrodes 232 to be formed are removed. Then, an electroplating process is used to form a plurality of second sub-electrodes 232 on the film layer where the first sub-electrodes 231 are located, and each second sub-electrode 232 is electrically connected to one first sub-electrode 231.

[0095] In another possible implementation manner, when the first sub-electrode 231 is a strip-shaped integral structure, in the above step S402, as Figure 14As shown, the subsequent process is used to fabricate each connection part (the first connection part 241, the second connection part 242, the third connection part 243, the fourth connection part 244, the fifth connection part 245, etc.) and part of the dielectric layer 22. Then, a plurality of blind holes penetrating through the dielectric layer 22 and part of the semiconductor substrate 21 (or only penetrating through the dielectric layer 22) are fabricated. Conductive materials, such as metal materials like aluminum, copper, tungsten, etc., are filled in each blind hole to obtain a plurality of first sub-electrodes 231. As Figure 15 shown, a conductive connection part 25, part of the dielectric layer 22, and a protective layer 27 are formed on the film layer where the first sub-electrode 231 is located. The dielectric layer 22 and the protective layer 27 at the positions where the respective second sub-electrodes 232 are to be formed are removed. Then, a plurality of second sub-electrodes 232 are formed on the film layer where the first sub-electrode 231 is located by using an electroplating process, and each second sub-electrode 232 is electrically connected to a first electrode 231.

[0096] In some other embodiments of the present application, when the electrode is a strip-shaped integral structure consistent with the extending direction of the first through hole, in the above step S402, referring to Figure 14 , the electrode 23 can be fabricated by using the through silicon via (TSV) process. Specifically, an etching process is used to form a plurality of blind holes penetrating through the dielectric layer 22 and part of the semiconductor substrate 21 (or only penetrating through the dielectric layer 22). Conductive materials, such as metal materials like aluminum, copper, tungsten, etc., are filled in each blind hole to obtain a plurality of electrodes 23. In this way, the consistency of the fabricated electrodes 23 is relatively good, so that the uniformity of the electric field formed by the electrodes 23 is relatively good. Moreover, a plurality of electrodes 23 can be fabricated by using the same process at one time, and the fabrication process is relatively simple and the fabrication efficiency is relatively high. Referring to Figure 16 , after forming a plurality of electrodes 23, a conductive connection part 25 is formed on the film layer where the electrodes 23 are located, so that the electrodes 23 are electrically connected to the control element through the conductive connection part 25.

[0097] In the above step S403, referring to Figure 13 and Figure 15 , an etching process is used to etch film layers such as the protective layer 27, the dielectric layer 22, and the semiconductor substrate 21 to form a first through hole T1 penetrating through the independent electron beam correction chip in the direction perpendicular to the surface of the semiconductor substrate 21, and the independent electron beam correction chip as shown in Figure 5 or Figure 10 is obtained.

[0098] In addition, after the above step S403, referring to Figure 10, the semiconductor substrate 21 can be turned over, and the second part t2 of the first through hole T1 can be formed on the back surface of the semiconductor substrate 21 by using the micro electro mechanical systems (MEMS) process. When the semiconductor substrate 21 has multiple through holes, the lower parts of the multiple through holes can form an opening U with a larger aperture.

[0099] Although the preferred embodiments of the present application have been described, those skilled in the art can make additional changes and modifications to these embodiments once they know the basic creative concept. Therefore, the appended claims are intended to be construed to include the preferred embodiments as well as all changes and modifications falling within the scope of the present application.

[0100] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present application without departing from the spirit and scope of the embodiments of the present application. Thus, if these modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application is also intended to include these changes and modifications.

Claims

1. An independent electron beam correction chip, characterized in that, it includes: a semiconductor substrate; a dielectric layer disposed on the semiconductor substrate; a first through hole extending through the semiconductor substrate and the dielectric layer in a first direction, where the first direction is perpendicular to the surface of the semiconductor substrate; a first electrode group, the first electrode group includes: a plurality of electrodes disposed around the first through hole, wherein a part of each electrode is located in the dielectric layer, and another part of each electrode protrudes from the dielectric layer in the first direction.

2. The independent electron beam correction chip according to claim 1, characterized in that, the electrode includes: a first sub - electrode and a second sub - electrode which are stacked and electrically connected; at least a part of the first sub - electrode is located in the dielectric layer, and in the first direction, the first sub - electrode does not exceed the upper surface of the dielectric layer, and at least a part of the second sub - electrode protrudes from the upper surface of the dielectric layer.

3. The independent electron beam correction chip according to claim 2, characterized in that, the first sub - electrode is a strip - shaped electrode arranged in the first direction.

4. The independent electron beam correction chip according to claim 2 or 3, characterized in that, a part of the first sub - electrode is located in the dielectric layer, and another part of the first sub - electrode is located in the semiconductor substrate.

5. The independent electron beam correction chip according to claim 2, characterized in that, the first sub - electrode includes: a plurality of sheet - shaped electrodes located in the dielectric layer; the plurality of sheet - shaped electrodes are stacked, and at least one conductive connection hole disposed in the dielectric layer electrically connects every two adjacent sheet - shaped electrodes.

6. The independent electron beam correction chip according to any one of claims 2 - 5, characterized in that, it further includes: a protective layer located above the dielectric layer; in the first direction, the first through hole penetrates the protective layer, and the second sub - electrode protrudes from the upper surface of the protective layer.

7. The independent electron beam correction chip according to claim 1, characterized in that, the electrode is a strip - shaped electrode arranged in the first direction, a part of the strip - shaped electrode is located in the dielectric layer, and another part of the strip - shaped electrode is located in the semiconductor substrate.

8. The independent electron beam correction chip according to any one of claims 1 - 7, characterized in that, the first through hole includes: a first part and a second part that are interconnected, the first part is located above the second part, and the aperture of the second part is larger than that of the first part.

9. The independent electron beam correction chip according to claim 8, characterized in that, the second part of the first through hole is located below the electrode, and in the first direction, the electrode and the second part of the first through hole are separated by semiconductor substrate material.

10. The independent electron beam correction chip according to claim 8 or 9, characterized in that, in the first direction, a second through hole extending through the semiconductor substrate and the dielectric layer is further provided; The independent electron beam correction chip further includes: a second electrode group, and the second electrode group includes: a plurality of electrodes disposed around the second through hole; The second through hole includes: a third part and a fourth part that communicate with each other, the third part is located above the fourth part, and the aperture of the fourth part is larger than that of the third part; The second part of the first through hole communicates with the fourth part of the second through hole.

11. An electron beam detection device Characterized in that It includes: An electron beam source, and an independent electron beam correction chip according to any one of claims 1 to 10; The electron beam source is disposed above the dielectric layer and is configured to emit an electron beam in a direction toward the independent electron beam correction chip; The electron beam passes through the first through hole and then irradiates the object to be measured; The independent electron beam correction chip is configured to correct the electron beam passing through the first through hole by applying a voltage to the first electrode group.

12. A manufacturing method of an independent electron beam correction chip Characterized in that It includes: Providing a semiconductor substrate; Forming a dielectric layer on the semiconductor substrate and forming a plurality of electrodes; wherein, a part of each electrode is located within the dielectric layer, and another part of each electrode protrudes from the dielectric layer in a first direction; the first direction is a direction perpendicular to the surface of the semiconductor substrate; Etching the semiconductor substrate and the dielectric layer to form a first through hole that penetrates the semiconductor substrate and the dielectric layer in the first direction; the first through hole is surrounded by a plurality of the electrodes.

13. The manufacturing method according to claim 12 Characterized in that The forming of the plurality of electrodes includes: Forming a plurality of first sub-electrodes located below the upper surface of the dielectric layer; at least a part of each first sub-electrode is located within the dielectric layer; Adopting an electroplating process to form a plurality of second sub-electrodes on the film layer where the first sub-electrodes are located; each second sub-electrode is electrically connected to one of the first sub-electrodes.

14. The manufacturing method according to claim 12 Characterized in that The forming of the plurality of electrodes includes: Adopting an etching process to form a plurality of blind holes that penetrate the dielectric layer and part of the semiconductor substrate; Filling the plurality of blind holes with a conductive material to obtain the plurality of electrodes.

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