Semiconductor process equipment and control method thereof

Abstract

The invention discloses semiconductor process equipment and a control method thereof. The disclosed semiconductor process equipment comprises a reaction chamber and a heating assembly, the chamber body comprises two transparent quartz parts which are respectively positioned above and below the base; a heating assembly is arranged on the side, away from the base, of at least one transparent quartz part. The heating assembly comprises a first infrared heating piece and a second infrared heating piece; the first infrared heating element is used for emitting first infrared light in a first wavelength range, so that the first infrared light passes through the transparent quartz part to reach the base; the second infrared heating element is used for emitting second infrared light in a second wavelength range; the transmittance of the transparent quartz part to the first infrared light is larger than 90%, the transmittance of the transparent quartz part to the second infrared light is smaller than 5%, and the rest of the transparent quartz part is absorbed and reflected. According to the scheme, the problem that semiconductor process equipment in the related technology is easy to deposit to generate a coating and the problem that the whole reaction chamber is over-etched due to the fact that the etching amount is increased to solve the coating problem can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor process equipment, and in particular to a semiconductor process equipment and a control method thereof. Background Art

[0002] When a semiconductor process equipment grows an epitaxial layer on a substrate, in addition to the growth of the epitaxial layer on the substrate, a coating will inevitably be deposited on the entire inner part of the reaction chamber. The thickness of this coating varies at different parts inside the reaction chamber, which will affect the heating field uniformity, thermal efficiency, etc., and further affect the consistency of the process results. Therefore, this coating needs to be removed.

[0003] In the related art, the related art uses etching gas to be introduced into the reaction chamber to etch the coating at a high temperature to ensure the cleanliness of the reaction chamber and the consistency of the process environment. The reaction chamber is usually provided with a transparent part through which the infrared light emitted by the infrared heating element passes and reaches the pedestal inside the reaction chamber. Since the transparent part has a high transmittance for the infrared light used to heat the pedestal and has poor heat absorption, the temperature of the transparent part is usually lower than that of other parts of the reaction chamber, resulting in a relatively thick and uneven coating on the transparent part. When etching the coating inside the reaction chamber, in order to ensure the etching effect of the coating on the transparent part, usually the amount of etching gas introduced is increased, the overall etching temperature is increased, or the etching time is extended. This easily leads to over-etching of other parts inside the reaction chamber, and at the same time reduces the energy utilization rate and increases the proportion of the etching process occupying the machine time. Summary of the Invention

[0004] The present invention discloses a semiconductor process equipment and a control method thereof to solve the problems that the semiconductor process equipment in the related art is prone to deposit and generate a coating, and the problem of over-etching of the entire reaction chamber caused by increasing the etching amount to solve the coating problem.

[0005] In order to solve the above technical problems, the present invention is implemented as follows:

[0006] In a first aspect, the present application discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes a reaction chamber and a heating component;

[0007] The reaction chamber includes a chamber body and a pedestal, the pedestal is arranged inside the chamber body, and the chamber body includes two transparent quartz parts located above and below the pedestal respectively;

[0008] At least one of the transparent quartz parts is provided with the heating component on a side facing away from the pedestal;

[0009] The heating component includes a first infrared heating element and a second infrared heating element;

[0010] The first infrared heating element is configured to emit first infrared light within a first wavelength range, so that the first infrared light passes through the transparent quartz portion and reaches the base;

[0011] The second infrared heating element is configured to emit second infrared light within a second wavelength range, so that the second infrared light reaches the transparent quartz portion;

[0012] Wherein, the transmittance of the transparent quartz portion to the first infrared light is greater than 90%, and the transmittance to the second infrared light is less than 5%.

[0013] In a second aspect, the present application also discloses a control method for a semiconductor process equipment, where the semiconductor process equipment is the semiconductor process equipment described in the first aspect, and the semiconductor process equipment further includes a detection device and a first driving mechanism, and the first driving mechanism is connected to the second infrared heating element;

[0014] The control method includes:

[0015] Controlling the first infrared heating element to emit first infrared light within a first wavelength range, so that the first infrared light passes through the transparent quartz portion and reaches the base;

[0016] Controlling the detection device to detect the coating thickness of the plurality of target areas;

[0017] Determining the target areas that need to be heated among the plurality of target areas according to the coating thickness;

[0018] Controlling the first driving mechanism to drive the second infrared heating element to move, so that the second infrared light emitted by the second infrared heating element is projected onto the target areas that need to be heated.

[0019] The technical solution adopted by the present invention can achieve the following technical effects:

[0020] In the semiconductor process equipment disclosed in the embodiments of the present application, by providing a first infrared heating element and a second infrared heating element, when the semiconductor process equipment is in the process mode, the first infrared heating element emits first infrared light, and the first infrared light passes through the transparent quartz part to reach the base, so that the first infrared light can heat the base well. The second infrared heating element emits second infrared light to make the second infrared light reach the transparent quartz part. Since the transparent quartz part has a low transmittance and good absorption effect on the second infrared light, the second infrared light can heat the transparent quartz part well without affecting the temperature of the base, thereby increasing the temperature of the transparent quartz part, reducing the temperature difference between the transparent quartz part and other parts in the chamber body, and then slowing down the coating deposition rate of the transparent quartz part. Thus, in the process mode, the thickness difference of the coating at the position of the transparent quartz part and the positions of other parts in the chamber body can be reduced. Furthermore, when etching the coating, the situation of over-etching other parts in the chamber body can be avoided. Moreover, since the temperature of the transparent quartz part increases and its coating deposition rate decreases, the shielding of the first infrared light by the coating on the transparent quartz part can be alleviated, which is beneficial to the uniformity of the heating of the base by the first infrared light and also beneficial to the cleanliness in the chamber body. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is an overall schematic diagram of the semiconductor process equipment disclosed in the embodiments of the present invention;

[0022] Figure 2 is the light transmittance of the quartz material disclosed in the embodiments of the present invention for infrared light in each wavelength range;

[0023] Figure 3 is a distribution schematic diagram of the second infrared heating element and the filter disclosed in the embodiments of the present invention;

[0024] Figure 4 is a cooperation schematic diagram of the first driving mechanism and the second infrared heating element disclosed in the embodiments of the present invention;

[0025] Figure 5 is a structural schematic diagram of the second driving mechanism disclosed in the embodiments of the present invention;

[0026] Figure 6 is a flowchart of a control method for a semiconductor process equipment disclosed in the embodiments of the present invention.

[0027] DESCRIPTION OF THE REFERENCE NUMERALS:

[0028] 110 - chamber body, 101 - transparent quartz part, 102 - heat insulation part, 111 - upper quartz cover, 112 - lower quartz cover,

[0029] 113 - Ring - shaped base, 114 - Fixed flange, 115 - Upper protective wall, 116 - Lower protective wall, 117 - Pre - heating ring, 119 - Seal

[0030] 120 - Base

[0031] 200 - First infrared heating element

[0032] 300 - Second infrared heating element, 310 - First light emitter, 320 - Lamp cover

[0033] 400 - Detection device

[0034] 500 - First driving mechanism, 510 - First driving body, 520 - Cam

[0035] 600 - Third infrared heating element

[0036] 700 - Second driving mechanism, 710 - Driving base, 720 - Spherical rotating part

[0037] 800 - Filter Detailed implementation mode

[0038] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative efforts fall within the scope of protection of the present invention.

[0039] The following will, in conjunction with the drawings, detail the technical solutions disclosed in each embodiment of the present invention.

[0040] Please refer to Figures 1 to 5 , an embodiment of the present invention discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes a reaction chamber and a heating component.

[0041] The reaction chamber includes a chamber body 110 and a base 120, and the base 120 is disposed inside the chamber body 110. The chamber body 110 includes two transparent quartz parts 101 located above and below the base 120 respectively. At least one of the transparent quartz parts 101 has a heating component disposed on the side facing away from the base 120. For example, for the transparent quartz part 101 above the base, a heating component is disposed above the transparent quartz part 101; or, for the transparent quartz part 101 below the base, a heating component is disposed below the transparent quartz part 101; or, a set of heating components are respectively disposed on the sides of the two transparent quartz parts 101 facing away from the base 120.

[0042] Exemplarily, the heating assembly includes a first infrared heating element 200 and a second infrared heating element 300. Among them, the first infrared heating element 200 is used to emit first infrared light within a first wavelength range, so that the first infrared light passes through the transparent quartz part 101 to reach the base 120. The second infrared heating element 300 is used to emit second infrared light within a second wavelength range, so that the second infrared light reaches the transparent quartz part 101. Among them, the transmittance of the transparent quartz part 101 to the first infrared light is greater than 90%, and the transmittance to the second infrared light is less than 5%, and the rest are absorbed and reflected.

[0043] It should be noted that since the transmittance of the transparent quartz part 101 to the first infrared light is greater than 90% and the transmittance to the second infrared light is less than 5%, and the rest are absorbed and reflected. When the first infrared heating element 200 emits the first infrared light within the first wavelength range, the first infrared light can pass through the transparent quartz part 101 well to reach the base 120 to heat the base 120. When the second infrared heating element 300 emits the second infrared light within the second wavelength range, the second infrared light reaches the transparent quartz part 101 with a very low transmittance and can be well absorbed and reflected by the transparent quartz part 101, so that the transparent quartz part 101 can be heated well without affecting the temperature of the base 120.

[0044] In a specific application process, when the semiconductor process equipment is in a process mode (for example, the semiconductor process equipment transports reaction gas into the chamber body 110 to perform epitaxial growth on the substrate on the base 120), it is necessary to heat the base 120. The first infrared heating element 200 can be used to emit the first infrared light within the first wavelength range, so that the first infrared light passes through the transparent quartz part 101 to reach the base 120, so that the first infrared light can heat the base 120 well. It should be noted that since the transparent quartz part 101 has a good transmittance to the first infrared light and a poor heat absorption property for the first infrared light, therefore, if only the first infrared heating element 200 is provided, the temperature of the transparent quartz part 101 is usually lower than that of other parts in the chamber body 110, and the transparent quartz part 101 is more likely to deposit a coating. In the embodiment of the present application, a second infrared heating element 300 is further provided. The second infrared heating element 300 emits the second infrared light so that the second infrared light reaches the transparent quartz part 101. Since the transparent quartz part 101 has a good absorption effect on the second infrared light, the second infrared light can heat the transparent quartz part 101 well.

[0045] In the semiconductor process equipment disclosed in the embodiments of the present application, by providing a first infrared heating element 200 and a second infrared heating element 300, when the semiconductor process equipment is in the process mode, the first infrared heating element 200 emits first infrared light, and the first infrared light passes through the transparent quartz part 101 to reach the base 120, so that the first infrared light can heat the base 120 well. The second infrared heating element 300 emits second infrared light to make the second infrared light reach the transparent quartz part 101. Since the transparent quartz part 101 has a low transmittance and good absorption effect on the second infrared light, the second infrared light can heat the transparent quartz part 101 well without affecting the temperature of the base 120, so that the temperature of the transparent quartz part 101 rises, thereby reducing the temperature difference between the transparent quartz part 101 and other parts in the chamber body 110, and then the deposition rate of the coating on the transparent quartz part 101 can be slowed down. Thus, in the process mode, the thickness difference of the coatings at the position of the transparent quartz part 101 and the positions of other parts in the chamber body 110 can be reduced. Furthermore, when etching the coating, the situation of over-etching other parts in the chamber body 110 can be avoided. Moreover, since the temperature of the transparent quartz part 101 rises, the deposition rate of its coating decreases, which can relieve the shielding of the first infrared light by the coating on the transparent quartz part 101, and thus is beneficial to the uniformity of heating the base 120 by the first infrared light and also beneficial to the cleanliness in the chamber body 110.

[0046] Since the etching rate of the coating is related to the temperature, the lower the temperature of the chamber body, the lower the etching rate of the coating. In the related art, due to the poor heat absorption of the transparent quartz part, the temperature of the transparent quartz part is usually relatively lower than that of other parts of the chamber body in the cleaning mode (i.e., the process mode of introducing etching gas into the chamber body to etch the coating), so that the etching rate of the coating on the transparent quartz part is less than that of the coatings on other parts of the chamber body. To ensure good cleaning of the coating on the transparent quartz part, the power of the first infrared heating element 200 is usually increased to increase the overall temperature of the chamber body. Therefore, it is easy to cause over-etching of other parts of the chamber body and shorten the service life of related components such as seals, gold-plated reflectors, and heating lamps at high temperatures of the chamber body.

[0047] Therefore, during the further application of the embodiments of the present application, when the semiconductor process equipment is in the cleaning mode (i.e., the process mode of introducing an etching gas into the chamber body 110 to etch the coating), the second infrared heating element 300 can emit second infrared light, so that the second infrared light reaches the transparent part 101 and is absorbed and reflected by the transparent quartz part 101, thereby increasing the temperature of the transparent quartz part 101, and then increasing the etching rate of the transparent quartz part 101. Thus, it is possible to avoid the problem of over-etching other parts of the chamber body 110 in order to ensure good cleaning of the coating on the transparent quartz part 101. Moreover, there is no need to extend the etching time to ensure good cleaning of the coating on the transparent quartz part 101, thereby improving the cleaning efficiency of the semiconductor process equipment. Of course, in addition, the heating power of the first infrared heating element 200 can be reduced, thereby reducing the overall temperature of the chamber body 110, and then extending the service life of the first infrared heating element 200, the gold-plated reflector, and the chamber seal related to the heating of the chamber body 110, etc.

[0048] Specifically, since the transparent quartz part 101 is made of quartz material, as shown in the transmittance of infrared light in each wavelength range of the quartz material Figure 2 shown, in order to make the transmittance of the first infrared light through the transparent quartz part 101 greater than 90%, the first wavelength range can be 1 μm - 3 μm. In order to make the transmittance of the transparent quartz part 101 to the second infrared light less than 5%, the second wavelength range can be 5 μm - 20 μm.

[0049] Of course, in the embodiments of the present application, the transparent quartz part 101 can also be replaced with other transparent materials, and the corresponding selected first wavelength range and second wavelength range will also be different.

[0050] During the specific application process, the coating thickness of the transparent quartz part 101 may be uneven. Therefore, when the semiconductor process equipment is in the process mode, the uneven coating thickness on the transparent quartz part 101 will affect the uniformity of the first infrared light emitted by the first infrared heating element 200 reaching the base 120, and then affect the uniformity of the temperature of the base 120. When the semiconductor process equipment is in the cleaning mode, the uneven coating thickness on the transparent quartz part 101 will affect the etching uniformity and easily cause over-etching of the area with a lower coating thickness of the transparent quartz part 101.

[0051] To solve the above problems, optionally, the transparent part 101 may include a plurality of target areas. The semiconductor process equipment may further include a detection device 400 and a first driving mechanism 500. The first driving mechanism 500 may be connected to the second infrared heating element 300. The detection device 400 may be used to detect the coating thickness of the plurality of target areas. The first driving mechanism 500 may be used to drive the second infrared heating element 300 to move, so that the second infrared light emitted by the second infrared heating element 300 can be projected onto any one of the plurality of target areas.

[0052] It should be noted that after the detection device 400 detects the coating thickness of the plurality of target areas, the target areas that need to be heated can be determined according to the coating thickness of the plurality of target areas. Then, the first driving mechanism 500 can be used to drive the second infrared heating element 300 to move, so that the second infrared light emitted by the second infrared heating element 300 is projected onto the target areas that need to be heated. Among them, the control logic for determining the target areas that need to be heated according to the coating thickness of the plurality of target areas can be designed according to actual needs, and will not be elaborated in this application.

[0053] In the semiconductor process equipment disclosed in the embodiments of the present application, by dividing the transparent quartz part 101 into a plurality of target areas, the detection device 400 can detect the coating thickness of the plurality of target areas, so that the first driving mechanism 500 can be used to drive the second infrared heating element 300 to move, so that the second infrared light emitted by the second infrared heating element 300 can be projected onto any one of the plurality of target areas. Therefore, when the semiconductor process equipment is in the process mode, the target areas that need to be heated can be determined according to the coating thickness of the plurality of target areas (for example, the target area with the largest coating thickness, or the target area whose coating thickness difference from other target areas exceeds a preset thickness difference). The target areas that need to be heated are heated by the second infrared light to adjust the coating deposition rate of the target areas that need to be heated, and then the uniformity of the coating thickness on the transparent quartz part 101 can be adjusted, so as to improve the uniformity of heating the base 120 by the first infrared light, and thus the uniformity of the temperature of the base 120 can be improved. When the semiconductor process equipment is in the cleaning mode, the target areas that need to be heated can be determined according to the coating thickness of the plurality of target areas, and the target areas that need to be heated are heated by the second infrared light to adjust the etching rate of the target areas that need to be heated, and then the uniformity of etching the coating on the transparent quartz part 101 can be improved, and the situation of over-etching the areas with a lower coating thickness of the coating on the transparent quartz part 101 can be avoided.

[0054] For example, according to the coating thicknesses of multiple target areas, the target area with the thickest coating thickness can be determined. When the semiconductor process equipment is in the process mode, the second infrared light emitted by the second infrared heating element 300 can be projected onto the target area with the thickest coating thickness, which can slow down the coating deposition rate of the corresponding target area, and then make the coating thickness of the transparent quartz part 101 relatively uniform. Thus, when heating the base 120 by the first infrared heating element 200, it is beneficial to the uniformity of heating the base 120; when the semiconductor process equipment is in the cleaning mode, the second infrared light emitted by the second infrared heating element 300 can be projected onto the target area with the thickest coating thickness, which can increase the etching rate of the corresponding target area, thereby alleviating over-etching of the target area with a relatively low coating thickness of the transparent quartz part 101. Among them, the detection device 400 can determine the target area with the thickest coating thickness in real time. After the target area with the thickest coating thickness changes, the target area where the second infrared heating element 300 performs heating also changes accordingly.

[0055] It should be noted that when it is necessary to irradiate the entire area of the transparent quartz part 101 with the second infrared light, the first driving mechanism 500 can be used to drive the second infrared heating element 300 to irradiate multiple transparent quartz parts 101 in sequence, so as to achieve the irradiation of the entire area of the transparent quartz part 101.

[0056] Furthermore, it should be noted that the detection device 400 can be a monitoring camera. The semiconductor process equipment can also include an intelligent recognition control system. The monitoring camera can move within a certain range to detect the coating thicknesses of multiple target areas and record the surface states of multiple target areas in real time, and transmit the data to the intelligent recognition control system. The intelligent recognition control system performs big data analysis based on the surface color differences of multiple target areas, so as to determine the target areas that need to be heated among multiple target areas. After determining the target areas that need to be heated, the intelligent recognition control system can control the first driving mechanism 500 to drive the second infrared heating element 300 to move, so that the second infrared light emitted by the second infrared heating element 300 is projected onto the target areas that need to be heated. The detection device 400 can be arranged along the diameter direction of the transparent quartz part 101 at the position of 1 / 4 or 3 / 4 of the diameter of the transparent quartz part 101.

[0057] Optionally, the first infrared heating element 200 can be arranged opposite to and spaced from the transparent quartz part 101. Each heating component can include multiple first infrared heating elements 200. The multiple first infrared heating elements 200 of each heating component can be arranged at intervals in sequence around the central axis perpendicular to the bearing surface of the base 120, and are arranged adjacent to the edge of the transparent quartz part 101 in the extending direction of the transparent quartz part 101.

[0058] An optional embodiment, the chamber body 110 may include an upper quartz cover 111, a lower quartz cover 112, an annular base 113, and a fixing flange 114. The edges of the upper quartz cover 111 and the lower quartz cover 112 may be respectively connected to opposite sides of the annular base 113 through the fixing flange 114, so that the upper quartz cover 111, the lower quartz cover 112, and the annular base 113 enclose the inner cavity of the chamber body 110. The base 120 may be disposed in the inner cavity. Both the upper quartz cover 111 and the lower quartz cover 112 may include a transparent quartz part 101, and the second infrared heating element 300 may be disposed on the fixing flange 114.

[0059] The semiconductor process equipment disclosed in the embodiments of the present application discloses a specific structure of the chamber body 110, such that the fixing flange 114 can not only be used to connect the edge of the upper quartz cover 111 and the annular base 113, and connect the edge of the lower quartz cover 112 and the annular base 113, but also serve as the installation base for the second infrared heating element 300, which is beneficial to the compactness of the semiconductor process equipment.

[0060] Furthermore, the second infrared heating element 300 may include a plurality of first light emitters 310. The plurality of first light emitters 310 may be arranged around the transparent quartz part 101, which is beneficial to the more comprehensive irradiation of the transparent quartz part 101 by the second infrared heating element 300.

[0061] Optionally, the center of the transparent quartz part 101 may protrude in a direction away from the base 120 relative to the edge of the transparent quartz part 101. The semiconductor process equipment may further include a plurality of first driving mechanisms 500 arranged in one-to-one correspondence with the plurality of first light emitters 310. The first driving mechanism 500 may be connected to the corresponding first light emitter 310 for driving the first light emitter 310 to rotate, so that the second infrared light emitted by the first light emitter 310 can be projected to any position on the transparent quartz part 101 in the direction from the edge of the transparent quartz part 101 to the center of the transparent quartz part 101.

[0062] The semiconductor process equipment disclosed in the embodiments of the present application sets the transparent quartz part 101 such that the center protrudes in a direction away from the base 120 relative to the edge, so that the first driving mechanism 500 can drive the corresponding first light emitter 310 to rotate, so that the second infrared light emitted by the first light emitter 310 can be projected to any position on the transparent quartz part 101 in the direction from the edge of the transparent quartz part 101 to the center of the transparent quartz part 101, and thus the second infrared light can be emitted at any position in the direction from the edge of the transparent quartz part 101 to the center of the transparent quartz part 101.

[0063] Specifically, the first driving mechanism 500 may include a first driving body 510 and a cam 520 connected to the first driving body 510. The second infrared heating element 300 may further include a lamp cover 320. The first light emitter 310 may be disposed inside the lamp cover 320. The lamp cover 320 may be connected to the cam 520. The first driving body 510 may be configured to drive the cam 520 to rotate, so that the lamp cover 320 drives the first light emitter 310 to rotate.

[0064] In the semiconductor processing equipment disclosed in the embodiments of the present application, by providing the lamp cover 320, the first light emitter 310 can be disposed inside the lamp cover 320, so that the lamp cover 320 can condense the second infrared light emitted by the first light emitting body 310, thereby improving the intensity of the second infrared light emitted by the first light emitting body 310. The first driving mechanism 500 is provided to include a first driving body 510 and a cam 520 connected to the first driving body 510, so that the first driving body 510 can drive the cam 520 to drive the lamp cover 320 to move, so that the lamp cover 320 drives the first light emitting body 310 to move, thereby making the manner in which the first driving body 510 drives the first light emitting body 310 to move simpler.

[0065] Specifically, the lamp cover 320 may be configured to be a structure that rotates along a fixed axis. The lamp cover 320 may be provided with a groove, and at least a part of the cam 520 may extend into the groove and be rotationally engaged with the groove, thereby improving the stability of the cooperation between the cam 520 and the lamp cover 320. The first driving body 510 may drive the cam 520 to rotate to drive the lamp cover 320 to rotate around the fixed axis, thereby realizing the movement of the first light emitting body 310.

[0066] Optionally, the semiconductor processing equipment may further include a filter 800. The filter 800 may be disposed on the light-emitting side of the second infrared heating element 300 for filtering light with a wavelength less than 5 μm in the second infrared light, thereby preventing the light with a wavelength less than 5 μm emitted by the second infrared heating element 300 from passing through the transparent quartz part 101.

[0067] In order to more precisely heat a local area of the transparent quartz part 101, optionally, the heating assembly may further include a third infrared heating element 600 and a second driving mechanism 700. The second driving mechanism 700 may be connected to the third infrared heating element 600 for driving the third infrared heating element 600 to move, so that the third infrared light emitted by the third infrared heating element 600 is projected to any position of the transparent quartz part 101. Among them, the third infrared heating element 600 may be a laser heating lamp, the wavelength range of the third infrared light is within the second wavelength range, and the transmittance of the transparent quartz part 101 to the third infrared light is less than 5%, which can achieve good absorption and reflection.

[0068] In the semiconductor process equipment disclosed in the embodiments of the present application, by providing a third infrared heating element 600 and a second driving mechanism 700, and setting the third infrared heating element 600 as a laser heating lamp, and the transmittance of the third infrared light through the transparent quartz part 101 being less than 5%, good absorption and reflection can be achieved. Due to the characteristics of the laser heating lamp such as high brightness, good directivity, and small light dispersion, the second driving mechanism 700 can drive the third infrared heating element 600 to move, so that the third infrared heating element 600 can heat any target position of the transparent quartz part 101, thereby improving the local area heating ability of the transparent quartz part 101.

[0069] It should be noted that the first infrared heating element 200 and the second infrared heating element 300 can be halogen heating elements, and of course, they can also be other infrared heating elements. The embodiments of the present application do not specifically limit the types of the first infrared heating element 200 and the second infrared heating element 300. The wavelength range of the third infrared light is within the second wavelength range. Preferably, the wavelength of the third infrared light can be 10.6 μm.

[0070] Specifically, the third infrared heating element 600 can be disposed opposite to and spaced apart from the transparent quartz part 101, and the distance between the third infrared heating element 600 and the transparent quartz part 101 is greater than the distance between the first infrared heating element 200 and the transparent quartz part 101. Each heating assembly can include a plurality of third infrared heating elements 600. The plurality of third infrared heating elements 600 of each heating assembly can be arranged at intervals in sequence around the central axis perpendicular to the bearing surface of the base 120, and are arranged closer to the center of the transparent quartz part 101 relative to the first infrared heating element 200 in the extending direction of the transparent quartz part 101.

[0071] Optionally, the heating assembly can further include a fourth infrared heating element and a second driving mechanism 700. The second driving mechanism 700 can be connected to the fourth infrared heating element for driving the fourth infrared heating element to move, so that the fourth infrared light emitted by the fourth infrared heating element (the wavelength range of the fourth infrared light is within the first wavelength range. Preferably, the wavelength range of the fourth infrared light is 630 nm to 1000 nm) passes through the transparent quartz part 101 and is projected onto any position of the base 120. Among them, the fourth infrared heating element can be a laser heating lamp, and the transmittance of the fourth infrared light through the transparent quartz part 101 can be greater than 90%.

[0072] In the semiconductor process equipment disclosed in the embodiments of the present application, by providing a fourth infrared heating element and a second driving mechanism 700, and setting the fourth infrared heating element as a laser heating lamp, and the transmittance of the transparent quartz part 101 to the fourth infrared light being greater than 90%, since the laser heating lamp has characteristics such as high brightness, good directivity, and small light dispersion, the second driving mechanism 700 can drive the fourth infrared heating element to move, so that the fourth infrared heating element can heat any target position of the susceptor 120, thereby improving the local area heating ability of the susceptor 120, and further facilitating the adjustment of the temperature uniformity of the susceptor 120.

[0073] Specifically, the fourth infrared heating element can be disposed opposite to and spaced apart from the transparent quartz part 101, and the distance between the fourth infrared heating element and the transparent quartz part 101 is greater than the distance between the first infrared heating element 200 and the transparent quartz part 101. Each heating assembly can include a plurality of fourth infrared heating elements (preferably 4 in number), and the plurality of fourth infrared heating elements of each heating assembly can be arranged at intervals in sequence around the central axis perpendicular to the bearing surface of the susceptor 120, and are arranged closer to the center of the transparent quartz part 101 relative to the first infrared heating element 200 in the extending direction of the transparent quartz part 101.

[0074] Optionally, the second driving mechanism 700 can include a driving base 710 and a spherical rotating part 720. The spherical rotating part 720 can be movably disposed on the driving base 710 and can rotate relative to the driving base 710 in any direction. The third infrared heating element 600 or the fourth infrared heating element can be disposed on the spherical rotating part 720.

[0075] In the semiconductor process equipment disclosed in the embodiments of the present application, by setting the second driving mechanism 700 to include a driving base 710 and a spherical rotating part 720, the spherical rotating part 720 can be movably disposed on the driving base 710 and can rotate relative to the driving base 710 in any direction, so that the driving base 710 can drive the third infrared heating element 600 or the fourth infrared heating element to rotate in any direction through the spherical rotating part 720.

[0076] When the semiconductor process equipment includes a detection device 400, the detection device 400 can also be disposed on the spherical rotating part 720, so that the driving base 710 can drive the detection device 400 to rotate in any direction through the spherical rotating part 720, thereby facilitating the detection of the coating thickness at any position of the transparent quartz part 101 by the detection device 400.

[0077] Optionally, the edges of the upper quartz cover 111 and the lower quartz cover 112 may respectively include heat insulation portions 102 surrounding the transparent quartz portion. The heat insulation portions 102 of the upper quartz cover 111 and the lower quartz cover 112 may be respectively connected to opposite sides of the annular base 113 through fixing flanges 114. The chamber body 110 may further include an upper protective wall 115, a lower protective wall 116, and a preheating ring 117. The upper protective wall 115 and the lower protective wall 116 may be disposed inside the inner cavity of the chamber body 110 and connected to the annular base 113. The upper protective wall 115 and the lower protective wall 116 may be used to protect the annular base 113. The preheating ring 117 may be disposed on the lower protective wall 116. The base 120 may be connected to the preheating ring 117 or may be supported by another bracket below. Seals 119 are provided at the joints of the annular base 113, the fixing flanges 114, and the heat insulation portions 102, so as to ensure the sealing of the chamber body 110.

[0078] The present application also discloses a control method for a semiconductor process equipment. The disclosed semiconductor process equipment is the semiconductor process equipment disclosed in the above embodiments. The semiconductor process equipment further includes a detection device 400 and a first driving mechanism 500. The first driving mechanism 500 is connected to the second infrared heating element 300.

[0079] Refer to the attached Figure 6 , the disclosed control method includes:

[0080] S101: Control the first infrared heating element 200 to emit first infrared light within a first wavelength range, so that the first infrared light passes through the transparent quartz portion 101 to reach the base 120.

[0081] S102: Control the detection device 400 to detect the coating thicknesses of a plurality of target areas.

[0082] S103: Determine the target areas to be heated among the plurality of target areas according to the coating thicknesses.

[0083] S104: Control the first driving mechanism 500 to drive the second infrared heating element 300 to move, so that the second infrared light emitted by the second infrared heating element 300 is projected onto the target areas to be heated.

[0084] It should be noted that the steps in the control method disclosed in the embodiments of the present application have the same or similar functions as the components of the semiconductor process equipment disclosed in the above embodiments, and they can be referred to each other.

[0085] In the case where the semiconductor process equipment disclosed in the embodiments of the present application is in the process mode, the control method can determine the target areas that need to be heated according to the coating thicknesses of multiple target areas, and heat the target areas that need to be heated by the second infrared light to adjust the coating deposition rate of the target areas that need to be heated. Furthermore, the uniformity of the coating thickness on the transparent quartz part 101 can be adjusted to improve the uniformity of heating the susceptor 120 by the first infrared light, thereby improving the uniformity of the temperature of the susceptor 120. In the case where the semiconductor process equipment is in the cleaning mode, the target areas that need to be heated can be determined according to the coating thicknesses of multiple target areas, and the target areas that need to be heated are heated by the second infrared light to adjust the etching rate of the target areas that need to be heated. Furthermore, the uniformity of etching the coating on the transparent quartz part 101 can be improved, and the situation of over-etching the areas with a relatively low coating thickness on the transparent quartz part 101 can be avoided.

[0086] In the above embodiments of the present invention, the differences between the various embodiments are mainly described. As long as the different optimized features between the various embodiments are not contradictory, they can be combined to form a more optimal embodiment. Considering the simplicity of the text, it will not be elaborated here.

[0087] Optionally, the heating assembly may further include a third infrared heating element 600 and a second driving mechanism 700. The second driving mechanism 700 may be connected to the third infrared heating element 600, and the detection device 400 may be connected to the second driving mechanism 700.

[0088] The control method disclosed in the embodiments of the present application may further include:

[0089] Step A1: Control the second driving mechanism 700 to drive the detection device 400 to move so that the detection device 400 monitors the coating thicknesses at different positions of the transparent quartz part 101.

[0090] Step A2: According to the coating thicknesses at different positions of the transparent quartz part 101, control the third infrared heating element 600 to emit third infrared light to specific positions of the transparent quartz part 101 to heat the specific positions of the transparent quartz part 101.

[0091] Among them, the third infrared heating element 600 may be a laser heating lamp, the wavelength of the third infrared light may be within the second wavelength range, and the transmittance of the transparent quartz part 101 to the third infrared light is less than 5%.

[0092] It should be noted that the detection device 400 can detect the coating thickness at different positions of the transparent quartz part 101, and record the surface states at different positions of the transparent quartz part 101 in real time, and transmit the data to the intelligent recognition control system. The intelligent recognition control system performs big data analysis based on the surface color difference at different positions of the transparent quartz part 101, so as to determine the specific positions of the transparent quartz part 101 that need to be heated.

[0093] The control method disclosed in the embodiments of the present application can realize better absorption and reflection by setting the third infrared heating element 600 and the second driving mechanism 700, setting the third infrared heating element 600 as a laser heating lamp, and the transmittance of the transparent quartz part 101 to the third infrared light being less than 5%. Since the laser heating lamp has characteristics such as high brightness, good directivity, and small light dispersion, the second driving mechanism 700 can drive the third infrared heating element 600 to move, so that the third infrared heating element 600 can heat specific positions of the transparent quartz part 101, thereby improving the heating ability of specific positions of the transparent quartz part 101.

[0094] Optionally, the heating assembly may further include a fourth infrared heating element and the second driving mechanism 700. The second driving mechanism 700 may be connected to the fourth infrared heating element, and the detection device 400 may be connected to the second driving mechanism 700.

[0095] The control method disclosed in the embodiments of the present application may further include:

[0096] Step B1: Control the second driving mechanism 700 to drive the detection device 400 to move, so that the detection device 400 monitors the coating thickness at different positions of the base 120.

[0097] Step B2: According to the coating thickness at different positions of the base 120, control the fourth infrared heating element to emit fourth infrared light to the base 120, so that the fourth infrared light passes through the transparent quartz part 101 to reach specific positions of the base 120 to heat the specific positions of the base 120.

[0098] Wherein, the fourth infrared heating element is a laser heating lamp, the wavelength of the fourth infrared light is within the first wavelength range, and the transmittance of the transparent quartz part 101 to the fourth infrared light is greater than 90%.

[0099] It should be noted that the detection device 400 can detect the coating thickness at different positions of the base 120, and record the surface states at different positions of the base 120 in real time, and transmit the data to the intelligent recognition control system. The intelligent recognition control system performs big data analysis based on the surface color difference at different positions of the base 120, so as to determine the specific positions of the base 120 that need to be heated.

[0100] The control method disclosed in the embodiments of the present application sets a fourth infrared heating element and a second driving mechanism 700, and sets the fourth infrared heating element as a laser heating lamp, and the transmittance of the transparent quartz part 101 to the fourth infrared light is greater than 90%. Since the laser heating lamp has characteristics such as high brightness, good directivity, and small light dispersion, the second driving mechanism 700 can drive the fourth infrared heating element to move, so that the fourth infrared heating element can heat a specific position of the base 120, thereby improving the heating ability of the specific position of the base 120, and further facilitating the adjustment of the temperature uniformity of the base 120.

[0101] The embodiments of the present invention have been described above in conjunction with the accompanying drawings. However, the present invention is not limited to the above specific embodiments. The above specific embodiments are merely illustrative and not restrictive. Under the inspiration of the present invention, those of ordinary skill in the art can also make many forms without departing from the spirit and scope protected by the claims of the present invention, and all of them belong to the protection scope of the present invention.

Claims

1. A semiconductor process equipment, characterized in that, it includes a reaction chamber and a heating component; The reaction chamber includes a chamber body (110) and a base (120), the base (120) is arranged in the chamber body (110), and the chamber body (110) includes two transparent quartz parts (101) respectively located above and below the base (120); At least one of the transparent quartz parts (101) is provided with the heating component on the side facing away from the base (120); The heating component includes a first infrared heating element (200) and a second infrared heating element (300); The first infrared heating element (200) is used to emit first infrared light in a first wavelength range, so that the first infrared light passes through the transparent quartz part (101) and reaches the base (120); The second infrared heating element (300) is used to emit second infrared light in a second wavelength range, so that the second infrared light reaches the transparent quartz part (101); Wherein, the transmittance of the transparent quartz part (101) to the first infrared light is greater than 90%, and the transmittance to the second infrared light is less than 5%.

2. The semiconductor process equipment according to claim 1, characterized in that, The first wavelength range is 1μm - 3μm, and the second wavelength range is 5μm - 20μm.

3. The semiconductor process equipment according to claim 1, characterized in that, The transparent quartz part (101) includes a plurality of target areas, and the semiconductor process equipment further includes a detection device (400) and a first driving mechanism (500), and the first driving mechanism (500) is connected to the second infrared heating element (300); The detection device (400) is used to detect the coating thickness of the plurality of target areas; The first driving mechanism (500) is used to drive the second infrared heating element (300) to move, so that the second infrared light emitted by the second infrared heating element (300) is projected onto any one of the plurality of target areas.

4. The semiconductor process equipment according to claim 1, characterized in that, The chamber body (110) includes an upper quartz cover (111), a lower quartz cover (112), an annular base (113) and a fixed flange (114). The edges of the upper quartz cover (111) and the lower quartz cover (112) are respectively connected to opposite sides of the annular base (113) through the fixed flange (114), so that the upper quartz cover (111), the lower quartz cover (112) and the annular base (113) enclose the inner cavity of the chamber body (110). The base (120) is arranged in the inner cavity. Both the upper quartz cover (111) and the lower quartz cover (112) include the transparent quartz part (101), and the second infrared heating element (300) is arranged on the fixed flange (114).

5. The semiconductor process equipment according to claim 4, characterized in that, The second infrared heating element (300) includes a plurality of first light emitters (310), and the plurality of first light emitters (310) are arranged around the transparent quartz part (101).

6. The semiconductor process equipment according to claim 5, wherein, the center of the transparent quartz part (101) protrudes away from the base (120) relative to the edge of the transparent quartz part (101); the semiconductor process equipment further includes a plurality of first driving mechanisms (500) arranged in one-to-one correspondence with the plurality of first light emitters (310), and the first driving mechanism (500) is connected to the corresponding first light emitter (310) for driving the first light emitter (310) to rotate, so that the second infrared light emitted by the first light emitter (310) can be projected to any position of the transparent quartz part (101) in the direction from the edge of the transparent quartz part (101) to the center of the transparent quartz part (101).

7. The semiconductor process equipment according to claim 6, wherein, the first driving mechanism (500) includes a first driving body (510) and a cam (520) connected to the first driving body (510), the second infrared heating element (300) further includes a lamp shade (320), the first light emitter (310) is arranged in the lamp shade (320), the lamp shade (320) is connected to the cam (520), and the first driving body (510) is used for driving the cam (520) to rotate, so that the lamp shade (320) drives the first light emitter (310) to rotate.

8. The semiconductor process equipment according to claim 1, wherein, the semiconductor process equipment further includes a filter (800), and the filter (800) is arranged on the light-emitting side of the second infrared heating element (300) for filtering light with a wavelength less than 5 μm in the second infrared light.

9. The semiconductor process equipment according to claim 1, wherein, the heating assembly further includes a third infrared heating element (600) and a second driving mechanism (700), the second driving mechanism (700) is connected to the third infrared heating element (600) for driving the third infrared heating element (600) to move, so that the third infrared light emitted by the third infrared heating element (600) is projected to any position of the transparent quartz part (101), wherein the third infrared heating element (600) is a laser heating lamp, the wavelength of the third infrared light is within the second wavelength range, and the transmittance of the transparent quartz part (101) to the third infrared light is less than 5%.

10. The semiconductor process equipment according to claim 1, wherein, The heating assembly further includes a fourth infrared heating element and a second driving mechanism (700). The second driving mechanism (700) is connected to the fourth infrared heating element and is configured to drive the fourth infrared heating element to move, so that the fourth infrared light emitted by the fourth infrared heating element passes through the transparent quartz part (101) and is projected onto any position of the base (120). Wherein, the fourth infrared heating element is a laser heating lamp, the wavelength of the fourth infrared light is within the first wavelength range, and the transmittance of the fourth infrared light through the transparent quartz part (101) is greater than 90%.

11. The semiconductor process equipment according to claim 9 or 10, characterized in that, the second driving mechanism (700) includes a driving base (710) and a spherical rotating part (720). The spherical rotating part (720) is movably disposed on the driving base (710) and can rotate relative to the driving base (710) in any direction. The third infrared heating element (600) or the fourth infrared heating element is disposed on the spherical rotating part (720).

12. A control method for a semiconductor process equipment, characterized in that, the semiconductor process equipment is the semiconductor process equipment according to any one of claims 1 to 11. The semiconductor process equipment further includes a detection device (400) and a first driving mechanism (500). The first driving mechanism (500) is connected to the second infrared heating element (300); the control method includes: controlling the first infrared heating element (200) to emit first infrared light within the first wavelength range, so that the first infrared light passes through the transparent quartz part (101) and reaches the base (120); controlling the detection device (400) to detect the coating thickness of the plurality of target areas; determining the target areas that need to be heated among the plurality of target areas according to the coating thickness; controlling the first driving mechanism (500) to drive the second infrared heating element (300) to move, so that the second infrared light emitted by the second infrared heating element (300) is projected onto the target areas that need to be heated.

13. The control method for a semiconductor process equipment according to claim 12, characterized in that, the heating assembly further includes a third infrared heating element (600) and a second driving mechanism (700). The second driving mechanism (700) is connected to the third infrared heating element (600), and the detection device (400) is connected to the second driving mechanism (700); the control method further includes: controlling the second driving mechanism (700) to drive the detection device (400) to move, so that the detection device (400) monitors the coating thickness at different positions of the transparent quartz part (101); according to the coating thickness at different positions of the transparent quartz part (101), controlling the third infrared heating element (600) to emit third infrared light to a specific position of the transparent quartz part (101) to heat the specific position of the transparent quartz part (101). Among them, the third infrared heating element (600) is a laser heating lamp, the wavelength of the third infrared light is within the second wavelength range, and the transmittance of the third infrared light through the transparent quartz part (101) is less than 5%.

14. The control method of the semiconductor process equipment according to claim 12, characterized in that, the heating assembly further includes a fourth infrared heating element and a second driving mechanism (700), the second driving mechanism (700) is connected to the fourth infrared heating element, and the detection device (400) is connected to the second driving mechanism (700); the control method further includes: controlling the second driving mechanism (700) to drive the detection device (400) to move, so that the detection device (400) monitors the coating thickness at different positions of the base (120); according to the coating thickness at different positions of the base (120), controlling the fourth infrared heating element to emit fourth infrared light to the base (120), so that the fourth infrared light passes through the transparent quartz part (101) to reach a specific position of the base (120), so as to heat a specific position of the base (120); wherein, the fourth infrared heating element is a laser heating lamp, the wavelength of the fourth infrared light is within the first wavelength range, and the transmittance of the fourth infrared light through the transparent quartz part (101) is greater than 90%.

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