Electrode introducing device and semiconductor process equipment

Abstract

The invention discloses an electrode leading-in device and semiconductor process equipment, the electrode leading-in device is applied to the semiconductor process equipment, the semiconductor process equipment comprises a bearing boat, the electrode leading-in device comprises a first electrode assembly and a second electrode assembly, the first electrode assembly comprises a first electrode leading-in piece and a first gas conveying pipe, and the second electrode assembly comprises a second electrode leading-in piece and a second gas conveying pipe. The second electrode assembly comprises a second electrode leading-in piece and a second gas conveying pipe, the first electrode leading-in piece is provided with a first electric contact part, the second electrode leading-in piece is provided with a second electric contact part, and the first electric contact part and the second electric contact part are used for being in electric contact with the bearing boat; the first gas conveying pipe is used for blowing protective gas to the upper part of the contact surface of the first electric contact part, and the second gas conveying pipe is used for blowing protective gas to the upper part of the contact surface of the second electric contact part. According to the scheme, the problem of high radio frequency caused by arc discharge due to poor contact between the bearing boat and the conductive graphite block in the prior art can be solved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to an electrode introduction device and a semiconductor processing equipment. Background Art

[0002] With the development of the photovoltaic industry, TOPCON (Tunnel Oxide Passivated Contact) process lines are likely to replace PERC (Passivated Emitter and Rear Cell) process lines. PECVD (Plasma Enhanced Chemical Vapor Deposition) is an important equipment in TOPCON production lines. In the PECVD process, at a low pressure of 200 Pa and a temperature between 400 and 500 °C, radio frequency is used to glow discharge on the carrier boat to form a film layer on the wafer surface. In the related art, the carrier boat is supported by a conductive graphite block and glow discharge is carried out through the conductive graphite block. However, when the carrier boat is matched with the conductive graphite block, there are usually gaps at the positions where the carrier boat and the conductive graphite block are in contact and cooperate. The process gas used to form the film layer on the wafer surface will enter the gap between the carrier boat and the conductive graphite block, thereby forming a film layer on the conductive graphite block, which is likely to cause poor contact between the carrier boat and the conductive graphite block and result in arc discharge, and further cause problems of high-frequency radio frequency. Summary of the Invention

[0003] The present invention discloses an electrode introduction device and a semiconductor processing equipment to solve the problem in the related art that the carrier boat and the conductive graphite block are prone to poor contact and arc discharge, and further cause high-frequency radio frequency problems.

[0004] To solve the above technical problems, the present invention is implemented as follows:

[0005] In a first aspect, the present application discloses an electrode introduction device applied to a semiconductor processing equipment, the semiconductor processing equipment includes a carrier boat, and the electrode introduction device includes a first electrode assembly and a second electrode assembly, wherein,

[0006] The first electrode assembly includes a first electrode introduction member and a first gas supply pipe, the second electrode assembly includes a second electrode introduction member and a second gas supply pipe, the first electrode introduction member has a first electrical contact portion, the second electrode introduction member has a second electrical contact portion, the first electrical contact portion and the second electrical contact portion are used for electrical contact with the carrier boat, the first gas supply pipe is used to blow a protective gas above the contact surface of the first electrical contact portion, and the second gas supply pipe is used to blow a protective gas above the contact surface of the second electrical contact portion.

[0007] In a second aspect, the present application also discloses a semiconductor processing apparatus. The disclosed semiconductor processing apparatus includes a bracket, a carrier boat, and the electrode introducing device described in the first aspect. The first electrode assembly is disposed on the bracket through the first electrode introducing member, and the second electrode assembly is disposed on the bracket through the second electrode introducing member. The bracket is used to support the carrier boat, and the first electrical contact portion and the second electrical contact portion are used to make electrical contact with the carrier boat.

[0008] The technical solution adopted by the present invention can achieve the following technical effects:

[0009] In the electrode introducing device disclosed in the embodiment of the present application, by providing the first gas delivery pipe and the second gas delivery pipe, the first gas delivery pipe is used to blow a protective gas above the contact surface of the first electrical contact portion, and the second gas delivery pipe is used to blow a protective gas above the contact surface of the second electrical contact portion. Thus, when both the first electrical contact portion and the second electrical contact portion are in electrical contact with the carrier boat, the protective gas blown by the first gas delivery pipe enters the gap between the contact surface of the first electrical contact portion and the carrier boat, and the protective gas blown by the second gas delivery pipe enters the gap between the contact surface of the second electrical contact portion and the carrier boat. Furthermore, the protective gas forms an air curtain in the gap between the contact surface of the first electrical contact portion and the carrier boat, and in the gap between the contact surface of the second electrical contact portion and the carrier boat, so as to isolate the plasma from entering the gap between the contact surface of the first electrical contact portion and the carrier boat and the gap between the contact surface of the second electrical contact portion and the carrier boat. Thereby, it is possible to avoid the growth of a film layer on the contact surface of the first electrical contact portion and the contact surface of the second electrical contact portion, and further prevent the occurrence of problems such as arc discharge between the carrier boat and the contact surface of the first electrical contact portion, and between the carrier boat and the contact surface of the second electrical contact portion, which may cause radio frequency and high frequency issues.

[0010] Moreover, by using the first gas delivery pipe to blow a protective gas above the contact surface of the first electrical contact portion and the second gas delivery pipe to blow a protective gas above the contact surface of the second electrical contact portion, it is possible to avoid the growth of a film layer on the contact surface of the first electrical contact portion and the contact surface of the second electrical contact portion. Thus, there is no need to stop the machine to polish the contact surface of the first electrical contact portion and the contact surface of the second electrical contact portion, thereby improving the process efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a schematic structural diagram of the electrode introducing device disclosed in the embodiment of the present invention;

[0012] Figure 2 is Figure 1 the partial enlarged schematic diagram shown at A in

[0013] Figure 3 is a schematic diagram of the cooperation between the electrode introducing device disclosed in the embodiment of the present invention and the bracket;

[0014] Figure 4 as Figure 3 the enlarged schematic view shown as B in

[0015] Figure 5 as Figure 3 the enlarged schematic view shown as C in

[0016] Figure 6 the structural schematic view of the semiconductor process equipment disclosed in the embodiments of the present invention;

[0017] Figure 7 the matching schematic view of the electrode introducing device and the reaction chamber disclosed in the embodiments of the present invention.

[0018] Description of reference numerals:

[0019] 100 - bracket, 110 - first support rod, 120 - second support rod,

[0020] 200 - first electrode assembly, 210 - first electrode introducing member, 211 - first electrical contact portion, 220 - first gas supply pipe, 230 - first electrode,

[0021] 300 - second electrode assembly, 301 - air hole, 310 - second electrode introducing member, 311 - second electrical contact portion, 320 - second gas supply pipe, 330 - second electrode,

[0022] 400 - first flange, 500 - second flange,

[0023] 600 - first auxiliary support member,

[0024] 700 - second auxiliary support member,

[0025] 800 - reaction chamber,

[0026] 900 - carrier boat, 910 - front boat foot, 920 - rear boat foot. Detailed description of the specific embodiments

[0027] In order to make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0028] The following will describe in detail the technical solutions disclosed in each embodiment of the present invention with reference to the drawings.

[0029] Please refer to Figures 1 to 7, embodiments of the present invention disclose an electrode introduction device, which is applied to semiconductor process equipment. The semiconductor process equipment includes a carrier boat 900, and the electrode introduction device can be used for glow discharge of the carrier boat 900. In a specific implementation process, wafers are loaded on the graphite sheets of the carrier boat 900, and the electrode introduction device is used to provide a radio frequency alternating electric field, so that the carrier boat 900 completes glow discharge in the radio frequency alternating electric field, thereby realizing coating of the wafers.

[0030] The electrode introduction device includes a first electrode assembly 200 and a second electrode assembly 300. It should be noted that the first electrode assembly 200 can be an anode electrode assembly, and the second electrode assembly 300 can be a cathode electrode assembly. Of course, the first electrode assembly 200 can also be a cathode electrode assembly, and the second electrode assembly 300 can be an anode electrode assembly.

[0031] The first electrode assembly 200 includes a first electrode introduction part 210 and a first gas supply pipe 220, and the second electrode assembly 300 includes a second electrode introduction part 310 and a second gas supply pipe 320. It should be noted that the conductive graphite block in the related art is equivalent to the first electrode introduction part 210 and the second electrode introduction part 310 in the embodiments of the present application.

[0032] The first electrode introduction part 210 has a first electrical contact part 211, and the second electrode introduction part 310 has a second electrical contact part 311. The first electrical contact part 211 and the second electrical contact part 311 are used for electrical contact with the carrier boat 900. When a cathode current is provided to one of the first electrical contact part 211 and the second electrical contact part 311 and an anode current is provided to the other in radio frequency, the carrier boat 900 completes glow discharge in the radio frequency alternating electric field.

[0033] The first gas supply pipe 220 is used to blow a protective gas above the contact surface of the first electrical contact part 211, and the second gas supply pipe 320 is used to blow a protective gas above the contact surface of the second electrical contact part 311. The contact surfaces of the first electrical contact part 211 and the second electrical contact part 311 are used for electrical contact with the carrier boat 900. When both the first electrical contact part 211 and the second electrical contact part 311 are in electrical contact with the carrier boat 900, the first gas supply pipe 220 blowing a protective gas above the contact surface of the first electrical contact part 211 means that the first gas supply pipe 220 blows a protective gas into the gap between the contact surface of the first electrical contact part 211 and the carrier boat 900; the second gas supply pipe 320 blowing a protective gas above the contact surface of the second electrical contact part 311 means that the second gas supply pipe 320 blows a protective gas into the gap between the contact surface of the second electrical contact part 311 and the carrier boat 900.

[0034] It should be noted that due to reasons such as assembly accuracy and thermal expansion and contraction, when the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311 come into contact with the carrier boat 900, the contact surfaces of the first electrical contact portion 211 and the carrier boat 900, and the contact surfaces of the second electrical contact portion 311 and the carrier boat 900 cannot fit well. However, during the glow discharge of the carrier boat 900 in a radio frequency alternating electric field, the process gas will be ionized to form plasma, and the plasma easily enters the gap between the contact surface of the first electrical contact portion 211 and the carrier boat 900, and enters the gap between the contact surface of the second electrical contact portion 311 and the carrier boat 900. As a result, a film layer is likely to grow on the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311, which easily triggers arc discharge between the carrier boat 900 and the contact surface of the first electrical contact portion 211, and between the carrier boat 900 and the contact surface of the second electrical contact portion 311, thereby triggering radio frequency high frequency, resulting in problems such as abnormal termination of the process or wafer rework. Moreover, it is also necessary to stop the machine to process the film layer grown on the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311, thus affecting the process efficiency.

[0035] The electrode introduction device disclosed in the embodiment of the present application is provided with a first gas pipeline 220 and a second gas pipeline 320, so that the first gas pipeline 220 is used to blow a protective gas above the contact surface of the first electrical contact portion 211, and the second gas pipeline 320 is used to blow a protective gas above the contact surface of the second electrical contact portion 311. Thus, when both the first electrical contact portion 211 and the second electrical contact portion 311 are in contact with the carrier boat 900, the protective gas blown by the first gas pipeline 220 enters the gap between the contact surface of the first electrical contact portion 211 and the carrier boat 900, and the protective gas blown by the second gas pipeline 320 enters the gap between the contact surface of the second electrical contact portion 311 and the carrier boat 900. Furthermore, the protective gas forms an air curtain in the gap between the contact surface of the first electrical contact portion 211 and the carrier boat 900, and in the gap between the contact surface of the second electrical contact portion 311 and the carrier boat 900, so as to isolate the plasma from entering the gap between the contact surface of the first electrical contact portion 211 and the carrier boat 900, and isolate the plasma from entering the gap between the contact surface of the second electrical contact portion 311 and the carrier boat 900. Thereby, it is possible to avoid the growth of a film layer on the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311, and further prevent problems such as arc discharge between the carrier boat 900 and the contact surface of the first electrical contact portion 211, and between the carrier boat 900 and the contact surface of the second electrical contact portion 311, which may trigger radio frequency high frequency.

[0036] Moreover, by blowing a protective gas above the contact surface of the first electrical contact portion 211 through the first gas delivery pipe 220 and blowing a protective gas above the contact surface of the second electrical contact portion 311 through the second gas delivery pipe 320, it is possible to prevent a film layer from growing on the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311. As a result, there is no need to stop the machine to polish the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311, thereby improving the process efficiency.

[0037] In a specific embodiment, air holes 301 may be formed in both the contact surface of the first electrical contact portion 211 and the contact surface of the second electrical contact portion 311. The air holes 301 of the first electrical contact portion 211 and the air holes 301 of the second electrical contact portion 311 may be respectively communicated with the first gas delivery pipe 220 and the second gas delivery pipe 320.

[0038] In the electrode introducing device disclosed in the embodiment of the present application, by forming air holes 301 in both the contact surface of the first electrical contact portion 211 and the contact surface of the second electrical contact portion 311, the air holes 301 of the first electrical contact portion 211 and the air holes 301 of the second electrical contact portion 311 are respectively communicated with the first gas delivery pipe 220 and the second gas delivery pipe 320. As a result, the first gas delivery pipe 220 and the second gas delivery pipe 320 respectively blow a protective gas upward from the surface of the contact surface of the first electrical contact portion 211 and the surface of the contact surface of the second electrical contact portion 311. Thus, when both the first electrical contact portion 211 and the second electrical contact portion 311 are in contact with the carrier boat 900, it is possible to stably blow a protective gas into the gaps between the contact surface of the first electrical contact portion 211 and the carrier boat 900 and between the contact surface of the second electrical contact portion 311 and the carrier boat 900.

[0039] It should be noted that in other embodiments, the outlet end of the first gas delivery pipe 220 may be spaced from the first electrical contact portion 211 for blowing a protective gas above the contact surface of the first electrical contact portion 211, and the outlet end of the second gas delivery pipe 320 is spaced from the second electrical contact portion 311 for blowing a protective gas above the contact surface of the second electrical contact portion 311. For example, the outlet end of the first gas delivery pipe 220 may be located at the end of the contact surface of the first electrical contact portion 211 and flush with the end of the contact surface of the first electrical contact portion 211, and the outlet end of the second gas delivery pipe 320 may be located at the end of the contact surface of the second electrical contact portion 311 and flush with the end of the contact surface of the second electrical contact portion 311.

[0040] In one embodiment, the first electrical contact portion 211 and the second electrical contact portion 311 may be plate-like structural members. The air holes 301 formed in the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311 may be through holes penetrating the entire plate-like structural member. The first gas delivery pipe 220 and the second gas delivery pipe 320 may be respectively docked and communicated with the through holes in the contact surface of the first electrical contact portion 211 and the through holes in the contact surface of the second electrical contact portion 311.

[0041] In another embodiment, both the first electrical contact portion 211 and the second electrical contact portion 311 may have inner cavities. The contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311 may be partial structures respectively enclosing the inner cavities of the corresponding first electrical contact portion 211 and the second electrical contact portion 311. The air holes 301 located in the contact surface of the first electrical contact portion 211 and the air holes 301 located in the contact surface of the second electrical contact portion 311 are respectively communicated with the corresponding inner cavities, and the first gas delivery pipe 220 and the second gas delivery pipe 320 are respectively communicated with the corresponding inner cavities.

[0042] The electrode introducing device disclosed in the embodiments of the present application sets the first electrical contact portion 211 and the second electrical contact portion 311 as structures having inner cavities, so that the air holes 301 located in the contact surface of the first electrical contact portion 211 and the air holes 301 located in the contact surface of the second electrical contact portion 311 are respectively communicated with the corresponding inner cavities, and the first gas delivery pipe 220 and the second gas delivery pipe 320 are respectively communicated with the corresponding inner cavities. Thus, when there are multiple air holes 301 in the contact surface, the first electrical contact portion 211 can deliver the protective gas to the inner cavity of the first electrical contact portion 211 only through one first gas delivery pipe 220, so as to realize delivering gas to the multiple air holes 301 in the contact surface of the first electrical contact portion 211. The second electrical contact portion 311 can deliver the protective gas to the inner cavity of the second electrical contact portion 311 only through one second gas delivery pipe 320, so as to realize delivering gas to the multiple air holes 301 in the contact surface of the second electrical contact portion 311, which is beneficial to the compactness of the structure of the electrode introducing device. Moreover, after the protective gas enters the inner cavities of the first electrical contact portion 211 and the second electrical contact portion 311 and then flows to the air holes 301 in the contact surface, the gas outlet of the multiple air holes 301 in the contact surface is more uniform.

[0043] In different process environments, such as different pressure environments, the electrode introducing device needs to adjust the flow rate of the delivered protective gas according to the actual process environment to facilitate the formation of a gas curtain better. In order to form a gas curtain better in different process environments, optionally, the electrode introducing device may further include flow controllers. Flow controllers are provided on both the first gas delivery pipe 220 and the second gas delivery pipe 320. The flow rate of the protective gas delivered by the first gas delivery pipe 220 and the second gas delivery pipe 320 can be adjusted through the flow controllers, and thus a gas curtain can be formed better in different process environments.

[0044] Specifically, when the electrode introducing device is in a negative pressure environment, the protective gas can form a positive pressure protection environment for the gap between the contact surface of the first electrical contact portion 211 and the carrier boat 900, and the gap between the contact surface of the second electrical contact portion 311 and the carrier boat 900, so as to better prevent the plasma from forming a film layer at the positions of the first electrical contact portion 211 and the second electrical contact portion 311.

[0045] This application also discloses a semiconductor processing apparatus. The disclosed semiconductor processing apparatus includes a bracket 100, a carrier boat 900, and the electrode introducing device disclosed in the above embodiments. The first electrode assembly 200 is disposed on the bracket 100 through the first electrode introducing member 210, and the second electrode assembly 300 is disposed on the bracket 100 through the second electrode introducing member 310. The bracket 100 is used to support the carrier boat 900, and the first electrical contact portion 211 and the second electrical contact portion 311 are used for electrical contact with the carrier boat 900.

[0046] The semiconductor processing apparatus disclosed in the embodiments of this application can avoid the growth of a film layer on the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311 by providing the electrode introducing device disclosed in the above embodiments, thereby preventing problems such as arc discharge and radio frequency high frequency caused by the contact surfaces of the carrier boat 900 and the first electrical contact portion 211, and the contact surfaces of the carrier boat 900 and the second electrical contact portion 311. Moreover, the first electrical contact portion 211 and the second electrical contact portion 311 can not only be used for glow discharge of the carrier boat 900, but also indirectly serve as components for supporting the carrier boat 900, so that the first electrical contact portion 211 and the second electrical contact portion 311 serve two purposes.

[0047] To facilitate the weight reduction of the semiconductor processing apparatus, optionally, the bracket 100 may include a first support rod 110 and a second support rod 120 that extend in the same direction and are spaced apart. The first electrode introducing member 210 may be disposed on the first support rod 110, and the second electrode introducing member 310 may be disposed on the second support rod 120. The first gas delivery pipe 220 may be disposed on the first support rod 110 along the extending direction of the first support rod 110, and the second gas delivery pipe 320 may be disposed on the second support rod 120 along the extending direction of the second support rod 120.

[0048] The semiconductor processing apparatus disclosed in the embodiments of this application has a structure in which the bracket 100 is configured to include the first support rod 110 and the second support rod 120 that are spaced apart, which is beneficial to the weight reduction of the semiconductor processing apparatus. Moreover, the first gas delivery pipe 220 is disposed on the first support rod 110 along the extending direction of the first support rod 110, and the second gas delivery pipe 320 is disposed on the second support rod 120 along the extending direction of the second support rod 120, which is beneficial to the compactness of the structure of the semiconductor processing apparatus.

[0049] The electrode introducing device usually needs to extend into the reaction chamber 800 together with the carrier boat 900 for processing. To facilitate the introduction of radio frequency into the first electrode introducing member 210 and the second electrode introducing member 310, optionally, the first electrode assembly 200 further includes a first electrode 230, and the second electrode assembly 300 further includes a second electrode 330. The first electrode 230 is connected to the first electrode introducing member 210, and the second electrode 330 is connected to the second electrode introducing member 310. The first electrode 230 is arranged along the extending direction of the first support rod 110, and the second electrode 330 is arranged along the extending direction of the second support rod 120.

[0050] In the semiconductor processing equipment disclosed in the embodiment of the present application, by providing the first electrode 230 and the second electrode 330, the first electrode 230 is connected to the first electrode introducing member 210, and the second electrode 330 is connected to the second electrode introducing member 310, so that it is convenient to introduce radio frequency into the first electrode introducing member 210 and the second electrode introducing member 310 through the first electrode 230 and the second electrode 330. By arranging the first electrode 230 along the extending direction of the first support rod 110 and the second electrode 330 along the extending direction of the second support rod 120, it is beneficial to the compactness of the structure of the semiconductor processing equipment.

[0051] Specifically, the first electrode 230 and the first electrode introducing member 210 can be connected by bolts, and the second electrode 330 and the second electrode introducing member 310 can be connected by bolts. Of course, the first electrode 230 and the first electrode introducing member 210 can be connected by welding, and the second electrode 330 and the second electrode introducing member 310 can be connected by welding, etc. The embodiment of the present application does not limit the connection manner between the first electrode 230 and the first electrode introducing member 210, and between the second electrode 330 and the second electrode introducing member 310.

[0052] To stably arrange the first electrode introducing member 210 and the second electrode introducing member 310 on the first support rod 110 and the second support rod 120, optionally, both the first electrode introducing member 210 and the second electrode introducing member 220 can be annular structural members. The first electrode introducing member 210 can be sleeved on the first support rod 110, and the second electrode introducing member 310 can be sleeved on the second support rod 120.

[0053] In the semiconductor processing equipment disclosed in the embodiment of the present application, by setting both the first electrode introducing member 210 and the second electrode introducing member 220 as annular structural members, the first electrode introducing member 210 is sleeved on the first support rod 110, and the second electrode introducing member 310 is sleeved on the second support rod 120, so that when the first electrode introducing member 210 and the second electrode introducing member 310 are respectively arranged on the first support rod 110 and the second support rod 120, the first electrode introducing member 210 and the second electrode introducing member 310 can be stably arranged on the first support rod 110 and the second support rod 120.

[0054] Optionally, the semiconductor process equipment may further include a first flange 400 and a second flange 500. Both ends of the first support rod 110 may be respectively connected to the first flange 400 and the second flange 500, and both ends of the second support rod 120 may be respectively connected to the first flange 400 and the second flange 500, thereby improving the structural strength of the semiconductor process equipment.

[0055] In an optional embodiment, the first flange 400 may be provided with a first air inlet and a second air inlet. The air inlet ends of the first air pipe 220 and the second air pipe 320 may be respectively communicated with the first air inlet and the second air inlet, and the air outlet ends of the first air pipe 220 and the second air pipe 320 are used to blow protective gas above the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311 respectively.

[0056] The semiconductor process equipment disclosed in the embodiments of the present application has a first air inlet and a second air inlet provided on the first flange 400, so that the air inlet end of the first air pipe 220 is communicated with the first air inlet, and the air inlet end of the second air pipe 320 is communicated with the second air inlet, so that protective gas is conveyed to the first air pipe 220 and the second air pipe 320 through the first air inlet and the second air inlet. Moreover, the first air inlet and the second air inlet can also be respectively used as the installation parts of the air inlet ends of the first air pipe 220 and the second air pipe 320, which is beneficial to improving the installation stability of the first air pipe 220 and the second air pipe 320.

[0057] Specifically, the air inlet ends of the first air pipe 220 and the second air pipe 320 may respectively extend into the first air inlet and the second air inlet, or when the first air inlet and the second air inlet are hollow convex structures, the air inlet ends of the first air pipe 220 and the second air pipe 320 may respectively be sleeved on the first air inlet and the second air inlet, so that the first air inlet and the second air inlet can also play a role in fixing the first air pipe 220 and the second air pipe 320.

[0058] The electrode introduction device usually needs to extend into the reaction chamber 800 together with the carrier boat 900 for processing. To facilitate the introduction of radio frequency into the first electrode introduction member 210 and the second electrode introduction member 310, optionally, the first electrode assembly 200 may further include a first electrode 230, the second electrode assembly 300 may further include a second electrode 330. The first end of the first electrode 230 may be connected to the first electrode introduction member 210, the second end of the first electrode 230 may be connected to the first electrode interface on the first flange 400, the first end of the second electrode 330 may be connected to the second electrode introduction member 310, and the second end of the second electrode 330 may be connected to the second electrode interface on the first flange 400.

[0059] In the semiconductor process equipment disclosed in the embodiments of the present application, by providing a first electrode 230 and a second electrode 330, the first end of the first electrode 230 is connected to the first electrode introducer 210, and the first end of the second electrode 330 is connected to the second electrode introducer 310. Thus, it is convenient to introduce radio frequency into the first electrode introducer 210 and the second electrode introducer 310 through the first electrode 230 and the second electrode 330. The second end of the first electrode 230 is connected to the first electrode interface on the first flange 400, and the second end of the second electrode 330 is connected to the second electrode interface on the first flange 400. Thus, not only can the electrical connection between the first electrode 230 and the second electrode 330 be realized, but also the first electrode interface and the second electrode interface can be used to fix the first electrode 230 and the second electrode 330, making the arrangement of the first electrode 230 and the second electrode 330 more stable.

[0060] Optionally, to more stably support the carrier boat 900, the semiconductor process equipment may further include a first auxiliary support 600 and a second auxiliary support 700. Both the first auxiliary support 600 and the second auxiliary support 700 may be disposed on the bracket 100, and both the first auxiliary support 600 and the second auxiliary support 700 may be used to support the carrier boat 900. When the contact surfaces of the first electrical contact portion 211 and the second electrical contact portion 311 are in electrical contact with the carrier boat 900, the electrode polarity of the first auxiliary support 600 is the same as that of the first electrode introducer 210, and the electrode polarity of the second auxiliary support 700 is the same as that of the second electrode introducer 310.

[0061] In the semiconductor process equipment disclosed in the embodiments of the present application, by providing a first auxiliary support 600 and a second auxiliary support 700, the bracket 100, the first auxiliary support 600, and the second auxiliary support 700 together support the carrier boat 900, making the support for the carrier boat 900 more stable. The first electrode introducer 210 can be electrically connected to the first auxiliary support 600 through the carrier boat 900, and the second electrode introducer 310 can be electrically connected to the second auxiliary support 700 through the carrier boat 900, such that the electrode polarity of the first auxiliary support 600 is the same as that of the first electrode introducer 210, and the electrode polarity of the second auxiliary support 700 is the same as that of the second electrode introducer 310, facilitating the realization of glow discharge of the carrier boat 900 in a radio frequency alternating electric field.

[0062] It should be noted that the carrier boat 900 may include a plurality of graphite sheets. The plurality of graphite sheets can be used to load wafers. The graphite sheets can be divided into odd-numbered sheets and even-numbered sheets, and the odd-numbered sheets and even-numbered sheets can be graphite sheets of different electrodes. When the electrode introducing device contacts the carrier boat 900, the front boat foot 910 of the carrier boat 900 can be the component that contacts the first electrode introducing member 210. The electrode of the front boat foot 910 is the same as that of the first electrode introducing member 210. For example, the electrodes of the front boat foot 910 and the first electrode introducing member 210 are anodes, and the graphite sheets connected to the front boat foot 910 are all anode graphite sheets. The rear boat foot 920 of the carrier boat 900 can be the component that contacts the second electrode introducing member 310. The electrode of the rear boat foot 920 is the same as that of the second electrode introducing member 310. For example, the electrodes of the rear boat foot 920 and the second electrode introducing member 310 are cathodes, and the graphite sheets connected to the rear boat foot 920 are all cathode graphite sheets. The anode graphite sheets and the cathode graphite sheets can be arranged at intervals in turn.

[0063] Optionally, the semiconductor process equipment may include a reaction chamber 800, and the bracket 100 can carry the wafer into the reaction chamber 800 for processing.

[0064] The carrier boat 900 in the semiconductor process equipment disclosed in the embodiments of the present application can be a furnace mouth boat. The semiconductor process equipment may further include a furnace tail boat. Both the furnace mouth boat and the furnace tail boat can be supported on the bracket 100. When the bracket 100 carries the furnace mouth boat and the furnace tail boat into the reaction chamber 800, the furnace mouth boat is located on the side where the furnace mouth of the reaction chamber 800 is located.

[0065] In the above embodiments of the present invention, the differences between the various embodiments are mainly described. As long as the different optimized features between the various embodiments are not contradictory, they can be combined to form a more optimal embodiment. For the sake of brevity of the text, it will not be elaborated here.

[0066] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above specific embodiments. The above specific embodiments are merely illustrative and not restrictive. Under the inspiration of the present invention, those of ordinary skill in the art can also make many forms without departing from the spirit and scope of the present invention as protected by the claims, and all of them belong to the protection scope of the present invention.

Claims

1. An electrode introduction device is applied to a semiconductor processing equipment, and the semiconductor processing equipment includes a carrier boat (900). Characterized in that, The electrode introduction device includes a first electrode assembly (200) and a second electrode assembly (300), wherein, The first electrode assembly (200) includes a first electrode introduction member (210) and a first gas delivery pipe (220), the second electrode assembly (300) includes a second electrode introduction member (310) and a second gas delivery pipe (320), the first electrode introduction member (210) has a first electrical contact portion (211), the second electrode introduction member (310) has a second electrical contact portion (311), the first electrical contact portion (211) and the second electrical contact portion (311) are used for electrical contact with the carrier boat (900), and the first gas delivery pipe (220) is used for blowing a protective gas above the contact surface of the first electrical contact portion (211), and the second gas delivery pipe (320) is used for blowing a protective gas above the contact surface of the second electrical contact portion (311).

2. The electrode introduction device according to claim 1, Characterized in that, Air holes (301) are formed in the contact surfaces of both the first electrical contact portion (211) and the second electrical contact portion (311), and the air holes (301) of the first electrical contact portion (211) and the air holes (301) of the second electrical contact portion (311) are respectively communicated with the first gas delivery pipe (220) and the second gas delivery pipe (320).

3. The electrode introduction device according to claim 2, Characterized in that, Both the first electrical contact portion (211) and the second electrical contact portion (311) have inner cavities, the air holes (301) located on the contact surface of the first electrical contact portion (211) and the air holes (301) located on the contact surface of the second electrical contact portion (311) are respectively communicated with the corresponding inner cavities, and the first gas delivery pipe (220) and the second gas delivery pipe (320) are respectively communicated with the corresponding inner cavities.

4. The electrode introduction device according to claim 1, Characterized in that, The outlet end of the first gas delivery pipe (220) is spaced from the first electrical contact portion (211) and is used for blowing a protective gas above the contact surface of the first electrical contact portion (211), and the outlet end of the second gas delivery pipe (320) is spaced from the second electrical contact portion (311) and is used for blowing a protective gas above the contact surface of the second electrical contact portion (311).

5. The electrode introduction device according to claim 1, Characterized in that, The electrode introduction device further includes a flow controller, and the flow controller is provided on both the first gas delivery pipe (220) and the second gas delivery pipe (320).

6. A semiconductor processing equipment, Characterized in that, Comprising a bracket (100), a carrier boat (900), and the electrode introducing device according to any one of claims 1 to 5, the first electrode assembly (200) is disposed on the bracket (100) through the first electrode introducing member (210), the second electrode assembly (300) is disposed on the bracket (100) through the second electrode introducing member (310), the bracket (100) is used to support the carrier boat (900), and the first electrical contact portion (211) and the second electrical contact portion (311) are used to make electrical contact with the carrier boat (900).

7. The semiconductor process equipment according to claim 6, characterized in that the bracket (100) includes a first support rod (110) and a second support rod (120) that have the same extending direction and are spaced apart, the first electrode introducing member (210) is disposed on the first support rod (110), the second electrode introducing member (310) is disposed on the second support rod (120), the first gas delivery pipe (220) is disposed on the first support rod (110) along the extending direction of the first support rod (110), and the second gas delivery pipe (320) is disposed on the second support rod (120) along the extending direction of the second support rod (120).

8. The semiconductor process equipment according to claim 7, characterized in that the first electrode assembly (200) further includes a first electrode (230), the second electrode assembly (300) further includes a second electrode (330), the first electrode (230) is connected to the first electrode introducing member (210), the second electrode (330) is connected to the second electrode introducing member (310), the first electrode (230) is arranged along the extending direction of the first support rod (110), and the second electrode (330) is arranged along the extending direction of the second support rod (120).

9. The semiconductor process equipment according to claim 7, characterized in that both the first electrode introducing member (210) and the second electrode introducing member (220) are annular structural members, the first electrode introducing member (210) is sleeved on the first support rod (110), and the second electrode introducing member (310) is sleeved on the second support rod (120).

10. The semiconductor process equipment according to claim 7, characterized in that the semiconductor process equipment further includes a first flange (400) and a second flange (500), both ends of the first support rod (110) are respectively connected to the first flange (400) and the second flange (500), and both ends of the second support rod (120) are respectively connected to the first flange (400) and the second flange (500).

11. The semiconductor process equipment according to claim 10, characterized in that The first flange (400) is provided with a first air inlet and a second air inlet. The air inlet ends of the first gas pipeline (220) and the second gas pipeline (320) are respectively communicated with the first air inlet and the second air inlet. The air outlet ends of the first gas pipeline (220) and the second gas pipeline (320) are used for blowing protective gas above the contact surface of the first electrical contact part (211) and above the contact surface of the second electrical contact part (311) respectively.

12. The semiconductor processing equipment according to claim 10, wherein, the first electrode assembly (200) further includes a first electrode (230), the second electrode assembly (300) further includes a second electrode (330). The first end of the first electrode (230) is connected to the first electrode introducing member (210), the second end of the first electrode (230) is connected to the first electrode interface on the first flange (400). The first end of the second electrode (330) is connected to the second electrode introducing member (310), and the second end of the second electrode (330) is connected to the second electrode interface on the first flange (400).

13. The semiconductor processing equipment according to claim 6, wherein, the semiconductor processing equipment further includes a first auxiliary support member (600) and a second auxiliary support member (700). The first auxiliary support member (600) and the second auxiliary support member (700) are both arranged on the bracket (100). The first auxiliary support member (600) and the second auxiliary support member (700) are both used for supporting the carrier boat (900). When the contact surfaces of the first electrical contact part (211) and the second electrical contact part (311) are in contact with the carrier boat (900), the electrode polarity of the first auxiliary support member (600) is the same as that of the first electrode introducing member (210), and the electrode polarity of the second auxiliary support member (700) is the same as that of the second electrode introducing member (310).

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