Dielectric waveguide vertical interconnection structure, manufacturing method and communication equipment

Abstract

The invention discloses a dielectric waveguide vertical interconnection structure, a manufacturing method and communication equipment, and relates to the technical field of communication, and the disclosed dielectric waveguide vertical interconnection structure comprises a dielectric plate; a plurality of through hole structures are vertically formed in the periphery of the preset area of the dielectric plate; the through hole structure is used for restraining the propagation direction of the electromagnetic waves input into the preset area to be parallel to the height direction of the through hole structure. According to the application, the through hole structure perpendicular to the periphery of the preset area of the dielectric plate is arranged, and the propagation direction of the electromagnetic wave in the preset area is restrained to be parallel to the height direction of the through hole structure by using the arranged through hole structure, so that the transmission direction of the electromagnetic wave is perpendicular to the dielectric plate, and vertical transmission of the electromagnetic wave is realized; therefore, vertical interconnection of channels of different planes is realized, and integration with structures on other plane channels is facilitated.

Description

Technical Field

[0001] The present invention relates to the field of communication technologies, and particularly to a dielectric waveguide vertical interconnection structure, a manufacturing method, and a communication device. Background Art

[0002] With the continuous development of technology, communication electronic devices require higher integration and smaller volumes. The importance of high-density integration lies in improving the performance and functional density of electronic devices, reducing the volume and weight of devices, lowering power consumption, enhancing reliability, and extending the service life of devices. Currently, existing dielectric waveguide interconnection structures, such as substrate integrated coaxial lines, can achieve multi-layer array distribution, improving the transmission rate.

[0003] However, when the existing dielectric waveguide interconnection structure transmits electromagnetic waves through its dielectric plate, each channel is independently distributed and can only be transmitted horizontally, presenting an interconnection problem for connecting channels on different planes, which is not conducive to integration with structures on channels of other planes. Summary of the Invention

[0004] The main objective of the present invention is to provide a dielectric waveguide vertical interconnection structure, a manufacturing method, and a communication device, aiming to solve the technical problem that the existing technology has an interconnection problem for connecting channels on different planes and is not conducive to integration with structures on channels of other planes.

[0005] To achieve the above objective, the present invention provides a dielectric waveguide vertical interconnection structure, which includes: a dielectric plate; A plurality of through-hole structures are vertically opened on the outer periphery of a preset area of the dielectric plate; The through-hole structures are used to constrain the propagation direction of electromagnetic waves input into the preset area to be parallel to the height direction of the through-hole structures.

[0006] In one embodiment, the dielectric plate includes: a first conductor area and a second conductor area; The first conductor area and the second conductor area are arranged on both sides of the preset area; A plurality of the through-hole structures are opened in both the first conductor area and the second conductor area; The through-hole structures in the first conductor area are symmetric with the through-hole structures in the second conductor area based on the preset area.

[0007] In one embodiment, the dielectric plate further includes: a dielectric area; The dielectric area is arranged between the first conductor area and the second conductor area and includes the preset area; A plurality of the through-hole structures are opened in the part of the dielectric area outside the preset area; Each of the via structures in the dielectric region is symmetric based on the preset region.

[0008] In one embodiment, each of the via structures in the first conductor region and the second conductor region is a metal via; The arrangement direction of each of the metal vias is perpendicular to the propagation direction of the electromagnetic wave.

[0009] In one embodiment, each of the via structures in the dielectric region is an air via; The arrangement direction of each of the air vias is perpendicular to the propagation direction of the electromagnetic wave.

[0010] In addition, to achieve the above object, the present invention also provides a method for manufacturing a dielectric waveguide vertical interconnection structure, and the method for manufacturing the dielectric waveguide interconnection structure includes the following steps: Obtain a dielectric plate; Vertically open a plurality of via structures on the outer periphery of the preset region of the dielectric plate; By adjusting each of the via structures, the propagation direction of the electromagnetic wave input to the preset region is constrained to be parallel to the height direction of the via structure.

[0011] In one embodiment, the via structure includes a metal via, and the step of vertically opening a plurality of via structures on the outer periphery of the preset region of the dielectric plate includes: Divide a first conductor region and a second conductor region on both sides of the preset region of the dielectric plate; Open a plurality of the metal vias in the first conductor region and the second conductor region respectively, and symmetrically distribute the metal vias in the first conductor region and the metal vias in the second conductor region based on the preset region.

[0012] In one embodiment, the via structure further includes an air via, and after the step of dividing a first conductor region and a second conductor region on both sides of the preset region of the dielectric plate, it further includes: Divide the region between the first conductor region and the second conductor region into a dielectric region, where the dielectric region includes the preset region; Open a plurality of the air vias in the part of the dielectric region outside the preset region, and symmetrically distribute each of the air vias in the dielectric region based on the preset region.

[0013] In one embodiment, the step of constraining the propagation direction of the electromagnetic wave input to the preset region to be parallel to the height direction of the via structure by adjusting the via structure includes: By adjusting the size parameters of each of the metal vias, the electric field component of the electromagnetic wave in the direction perpendicular to the height of the metal via is constrained; By adjusting the size parameters of each of the air vias, the electric field component of the electromagnetic wave in the height direction of the air via is constrained.

[0014] In addition, to achieve the above object, the present invention further provides a communication device, which includes the dielectric waveguide vertical interconnection structure described above.

[0015] One or more technical solutions proposed in this application have at least the following technical effects: The dielectric waveguide vertical interconnection structure disclosed in this application includes: a dielectric plate; a plurality of via structures are vertically opened on the outer periphery of a preset area of the dielectric plate; the via structures are used to constrain the propagation direction of the electromagnetic wave input into the preset area to be parallel to the height direction of the via structures. In this application, by opening via structures on the outer periphery of the preset area of the dielectric plate and using the opened via structures to constrain the propagation direction of the electromagnetic wave in the preset area to be parallel to the height direction of the via structures, the transmission direction of the electromagnetic wave is perpendicular to the dielectric plate, realizing the vertical transmission of the electromagnetic wave, thus realizing the vertical interconnection of channels on different planes, and further facilitating the integration with structures on other plane channels. Description of the Drawings

[0016] The drawings here are incorporated into the specification and form a part of this specification, showing embodiments consistent with this application and used together with the specification to explain the principles of this application.

[0017] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative efforts.

[0018] Figure 1 It is a schematic three-dimensional structure diagram of the dielectric waveguide vertical interconnection structure provided by the embodiment of this application; Figure 2 It is a top view of the dielectric waveguide vertical interconnection structure provided by the embodiment of this application; Figure 3 It is a front view of the dielectric waveguide vertical interconnection structure provided by the embodiment of this application; Figure 4 It is a schematic flow diagram of the embodiment of the manufacturing method of the dielectric waveguide vertical interconnection structure of this application.

[0019] The realization, functional characteristics and advantages of the object of the present invention will be further described with reference to the embodiments and the drawings. Detailed Embodiments

[0020] It should be understood that the specific embodiments described herein are only used to explain the technical solutions of the present application and are not used to limit the present application.

[0021] To better understand the technical solutions of the present application, the following will be described in detail in conjunction with the accompanying drawings of the specification and specific implementation manners.

[0022] The main solution of the embodiment of the present application is: a plurality of through-hole structures are vertically opened on the outer periphery of the preset area of the dielectric plate of the dielectric waveguide vertical interconnection structure; the through-hole structures are used to constrain the propagation direction of the electromagnetic wave input into the preset area to be parallel to the height direction of the through-hole structures.

[0023] Since there are interconnection problems in the connection of channels on different planes in the prior art, it is not conducive to integrating with the structures on other plane channels. The present application opens through-hole structures on the outer periphery of the preset area of the vertical dielectric plate, and uses the opened through-hole structures to constrain the propagation direction of the electromagnetic wave in the preset area to be parallel to the height direction of the through-hole structures, so that the transmission direction of the electromagnetic wave is perpendicular to the dielectric plate, realizing the vertical transmission of the electromagnetic wave, thereby realizing the vertical interconnection of channels on different planes, and further facilitating the integration with the structures on other plane channels.

[0024] Based on this, the first embodiment of the present application is proposed. In the first embodiment, a dielectric waveguide vertical interconnection structure is provided. Refer to Figure 1 , Figure 1 which is a three-dimensional structure schematic diagram of the dielectric waveguide vertical interconnection structure provided by the embodiment of the present application, Figure 1 and the shown structure is located in the xyz space coordinate system.

[0025] In this embodiment, the dielectric waveguide vertical interconnection structure includes: a dielectric plate 10.

[0026] It should be noted that the above dielectric plate 10 can be made of a material with a high dielectric constant and is used to limit the propagation of electromagnetic waves on a specific path.

[0027] A plurality of through-hole structures 30 are vertically opened on the outer periphery of the preset area 20 of the dielectric plate 10.

[0028] It should be noted that the above preset area 20 can be a pre-selected area for transmitting electromagnetic waves.

[0029] It can be understood that the above through-hole structure 30 can be a hollow cylindrical structure.

[0030] In a specific implementation, the preset area 20 can be selected in the dielectric plate 10 based on requirements, and then a plurality of through-hole structures 30 are vertically opened (i.e., in the z direction) on the outer periphery of the preset area 20, so that the preset area 20 is surrounded by each through-hole structure 30.

[0031] The through-hole structure 30 is configured to constrain the propagation direction of the electromagnetic wave input into the preset region 20 to be parallel to the height direction of the through-hole structure 30.

[0032] In a specific implementation, the electromagnetic wave can be input into the preset region 20 in any direction. When the electromagnetic wave propagates from the preset region 20 to the through-hole structure 30, the metallized inner wall of the through-hole structure 30 will reflect the electromagnetic wave and prevent it from diffusing into the surrounding space. By adjusting the dimensional parameters of the through-hole structure 30, the electric field of the electromagnetic wave can be constrained, so that the electromagnetic wave is constrained within the preset region 20 and is parallel to the height direction of the through-hole structure 30, that is, constrained to be transmitted along the z direction, thereby realizing the vertical transmission of the electromagnetic wave.

[0033] Among them, the above-mentioned through-hole structure 30 can be used for vertically connecting other multi-layer planar structures to achieve multi-layer stacked interconnection and improve the integration degree. Through the constraint effect of the through-hole structure 30 on the electromagnetic wave, the stable transmission of the electromagnetic wave between the multi-layer stacked interconnections can be realized, and the transmission of two electromagnetic wave propagation modes of the longitudinal section magnetic mode or the longitudinal section electric mode can also be realized, reducing the design complexity and increasing the design freedom.

[0034] The dielectric waveguide vertical interconnection structure disclosed in this embodiment includes: a dielectric plate; a plurality of through-hole structures are vertically opened on the outer periphery of the preset region of the dielectric plate; the through-hole structure is configured to constrain the propagation direction of the electromagnetic wave input into the preset region to be parallel to the height direction of the through-hole structure. In this embodiment, by opening the through-hole structure on the outer periphery of the preset region of the dielectric plate and using the opened through-hole structure to constrain the propagation direction of the electromagnetic wave in the preset region to be parallel to the height direction of the through-hole structure, the transmission direction of the electromagnetic wave is perpendicular to the dielectric plate, realizing the vertical transmission of the electromagnetic wave, thereby realizing the vertical interconnection of channels in different planes, and further facilitating the integration with the structures on other plane channels.

[0035] Based on the first embodiment of the present application, the second embodiment of the present application is proposed. In the second embodiment of the present application, the same or similar content as that in the above-mentioned first embodiment can be referred to the above introduction and will not be repeated hereinafter.

[0036] This embodiment can continue to refer to Figure 1 , in this embodiment, the dielectric plate 10 includes: a first conductor region 401 and a second conductor region 402.

[0037] It should be noted that the above-mentioned first conductor region 401 and the above-mentioned second conductor region 402 can be regions for conducting electricity.

[0038] The first conductor region 401 and the second conductor region 402 are arranged on both sides of the preset region 20.

[0039] In a specific implementation, the regions of the dielectric plates 10 on both sides of the preset region 20 can be divided into a first conductor region 401 and a second conductor region 402, and the first conductor region 401 and the second conductor region 402 are symmetric based on the preset region 20.

[0040] A plurality of the via structures 30 are provided in both the first conductor region 401 and the second conductor region 402.

[0041] The via structures 30 in the first conductor region 401 and the via structures 30 in the second conductor region 402 are symmetric based on the preset region 20.

[0042] In a specific implementation, referring to Figure 2 , Figure 2 is a top view of the dielectric waveguide vertical interconnection structure provided by an embodiment of the present application. Figure 2 The shown structure is located in the xyz space coordinate system. Via arrays composed of a plurality of via structures 30 can be vertically (i.e., along the z direction) provided in the first conductor region 401 and the second conductor region 402 respectively. And the via structures 30 in the first conductor region 401 and the via structures 30 in the second conductor region 402 are symmetric based on the preset region 20.

[0043] In this embodiment, continuing to refer to Figure 1 or Figure 2 , the dielectric plate 10 further includes: a dielectric region 50.

[0044] The dielectric region 50 is provided between the first conductor region 401 and the second conductor region 402 and includes the preset region 20.

[0045] In a specific implementation, on the dielectric plate 10, the region between the first conductor region 401 and the second conductor region 402 and including the preset region 20 can be used as the dielectric region 50.

[0046] A plurality of the via structures 30 are provided in the part of the dielectric region 50 outside the preset region 20.

[0047] Each of the via structures 30 in the dielectric region 50 is symmetric based on the preset region 20.

[0048] In a specific implementation, a plurality of via structures 30 can be vertically (i.e., along the z direction) provided in the part of the dielectric region 50 outside the preset region 20 respectively. And each of the via structures 30 in the dielectric region 50 is symmetric based on the preset region 20.

[0049] In this embodiment, each of the via structures 30 in the first conductor region 401 and the second conductor region 402 is a metal via 301.

[0050] The arrangement direction of each of the metal vias 301 is perpendicular to the propagation direction of the electromagnetic wave.

[0051] In a specific implementation, after holes are respectively formed in the first conductor region 401 and the second conductor region 402, the via structures formed by electroplating or filling metal materials in each hole are metal vias. That is, each of the via structures 30 in the first conductor region 401 and the second conductor region 402 is a metal via 301. The arrangement direction of each metal via 301 is perpendicular to the propagation direction of the electromagnetic wave, that is, arranged along the y-axis.

[0052] Furthermore, each metal via 301 can be used for conducting electricity and enhancing the reflection and confinement effects of the electromagnetic wave. By adjusting the size parameters of the metal via 301, the left and right (x-direction) electric fields of the electromagnetic wave can be constrained.

[0053] In this embodiment, each of the via structures 30 in the dielectric region 50 is an air via 302.

[0054] The arrangement direction of each of the air vias 302 is perpendicular to the propagation direction of the electromagnetic wave.

[0055] In a specific implementation, symmetric holes can be formed in the region outside the preset region 20 in the dielectric region 50, and then filled with air or other materials with a low dielectric constant, such as nitrogen or argon. The formed via structure 30 is an air via 302. The arrangement direction of each air via 302 is perpendicular to the propagation direction of the electromagnetic wave, that is, arranged along the y-axis.

[0056] Furthermore, each air via 302 has the characteristics of a low dielectric constant and low loss, and can reduce the propagation loss of the electromagnetic wave. And by adjusting the size parameters of the air via 302, the up and down electric fields (z-direction) of the electromagnetic wave can be constrained.

[0057] Exemplarily, the substrate integrated non-radiative dielectric waveguide at the circuit board level is used to illustrate this embodiment. The dielectric waveguide vertical interconnection structure of this embodiment can operate in the w-band (75 - 110 GHz), supports two electromagnetic wave propagation modes, namely the longitudinal cross-section magnetic mode and the longitudinal cross-section electric mode, realizes the vertical transmission of the electromagnetic wave, and uses the LTCC process ceramic plate material (dielectric constant 9.8, dielectric loss tangent 0.002). Refer to Figure 3 , Figure 3 is the front view of the dielectric waveguide vertical interconnection structure provided by the embodiment of the present application, Figure 3 The shown structure is located in the xyz space coordinate system, and the thickness h of the dielectric plate 10 1 = 0.864 mm. The width of the dielectric plate 10 is L 2 = 5.2 mm. Refer toFigure 2 , the length of the dielectric plate 10 is L 1 = 7 mm. The radius of each metal through-hole 301 is r 1 = 0.3 mm, and the hole-edge spacing between adjacent metal through-holes 301 is g 1 = 0.1 mm. The radius of each air through-hole 302 is r 2 = 0.25 mm, and the hole-edge spacing between adjacent air through-holes 302 is g 2 = 0.1 mm. The width a of the preset area 20 1 = 1 mm, and the length b of the preset area 20 1 = 1.4 mm.

[0058] Among them, the above parameters are for illustrative purposes only and do not limit this solution.

[0059] It should be understood that, referring to Figure 3 , after the electric field direction of the electromagnetic wave is restricted by the metal through-holes 301 and the air through-holes 302, the propagation direction of the electromagnetic wave in the preset area 20 can be made perpendicular to the substrate plane (xy plane), that is, to control the electromagnetic wave to propagate in the z direction in the preset area 20, so that it can be used for the interconnection between multiple layers of channels, reduce the structural size, and improve the integration degree.

[0060] It should be noted that the above examples are only for understanding this application and do not limit the dielectric waveguide vertical interconnection structure of this application. Based on this technical concept, more forms of simple transformation are within the protection scope of this application.

[0061] In addition, to achieve the above object, this application also proposes a method for manufacturing a dielectric waveguide vertical interconnection structure, referring to Figure 4 , Figure 4 is a schematic flow chart of an embodiment of the method for manufacturing a dielectric waveguide vertical interconnection structure of this application.

[0062] As Figure 4 shown, in this embodiment, the method for manufacturing the dielectric waveguide interconnection structure includes steps S10 to S30: Step S10, obtain a dielectric plate.

[0063] Step S20, vertically open a plurality of through-hole structures on the outer periphery of the preset area of the dielectric plate.

[0064] Step S30, by adjusting each of the through-hole structures, the propagation direction of the electromagnetic wave input into the preset area is restricted to be parallel to the height direction of the through-hole structure.

[0065] In a specific implementation, a dielectric plate made of a material with a high dielectric constant can be obtained. Then, a preset area is selected in the dielectric plate based on requirements. Subsequently, a plurality of through-hole structures are vertically opened on the outer periphery of the preset area, such that the preset area is surrounded by each through-hole structure. Electromagnetic waves can be input into the preset area in any direction. When the electromagnetic waves propagate from the preset area to the through-hole structures, the metallized inner walls of the through-hole structures will reflect the electromagnetic waves and prevent them from spreading into the surrounding space. By adjusting the size parameters of the through-hole structures, the electric field of the electromagnetic waves can be constrained, enabling the electromagnetic waves to be confined within the preset area and parallel to the height direction of the through-hole structures, thereby achieving the vertical transmission of electromagnetic waves.

[0066] In a feasible implementation manner, the through-hole structure includes metal through-holes, and step S20 includes: steps S201 to S202: Step S201, divide a first conductor area and a second conductor area on both sides of the preset area of the dielectric plate.

[0067] Step S202, open a plurality of the metal through-holes in the first conductor area and the second conductor area respectively, and symmetrically distribute the metal through-holes in the first conductor area and the metal through-holes in the second conductor area based on the preset area.

[0068] In a specific implementation, the dielectric plate areas on both sides of the preset area can be divided into a first conductor area and a second conductor area, and the first conductor area and the second conductor area are made to be symmetric based on the preset area. Then, a plurality of holes are vertically opened in the first conductor area and the second conductor area respectively. By electroplating or filling metal materials into each hole, the formed through-hole structure is a metal through-hole, that is, each through-hole structure in the first conductor area and the second conductor area is a metal through-hole, and the arrangement direction of each metal through-hole is perpendicular to the propagation direction of the electromagnetic waves. And it is set that the metal through-holes in the first conductor area and the metal through-holes in the second conductor area are symmetric based on the preset area.

[0069] In a feasible implementation manner, the through-hole structure further includes air through-holes. After step S201, steps S203 to S204 can further be included: Step S203, divide the area between the first conductor area and the second conductor area into a dielectric area.

[0070] Wherein, the dielectric area includes the preset area.

[0071] Step S204, open a plurality of the air through-holes in the part of the dielectric area outside the preset area, and symmetrically distribute each of the air through-holes in the dielectric area based on the preset area.

[0072] In a specific implementation, the area between the first conductor region and the second conductor region on the dielectric substrate and including the preset region can be used as the dielectric region. Holes that are symmetric to each other can be opened in the regions outside the preset region in the dielectric region, and then filled with air or other materials with a low dielectric constant, such as nitrogen or argon. The formed via structure is an air via. The arrangement direction of each air via is perpendicular to the propagation direction of the electromagnetic wave. And each air via in the dielectric region is symmetric based on the preset region.

[0073] In a feasible implementation manner, step S30 may include steps S301 to S302: Step S301, constrain the electric field component of the electromagnetic wave in the direction perpendicular to the height of the metal via by adjusting the size parameters of each metal via.

[0074] Step S302, constrain the electric field component of the electromagnetic wave in the height direction of the air via by adjusting the size parameters of each air via.

[0075] In a specific implementation, by adjusting the size parameters of the metal via, the left - right electric field of the electromagnetic wave (i.e., the electric field component in the direction perpendicular to the height of the metal via) can be constrained. By adjusting the size parameters of the air via, the up - down electric field of the electromagnetic wave (i.e., the electric field component in the height direction of the air via) can be constrained. Based on the constraints of the electromagnetic wave by the metal via and the air via, the propagation direction of the electromagnetic wave in the preset region can be made perpendicular to the substrate plane, so that it can be used for the interconnection between multiple layers of channels, reducing the structural size and improving the integration degree.

[0076] In this embodiment, a dielectric substrate is obtained; a plurality of via structures are vertically opened on the outer periphery of the preset region of the dielectric substrate; by adjusting each via structure, the propagation direction of the electromagnetic wave input into the preset region is constrained to be parallel to the height direction of the via structure. In this embodiment, by opening the via structure perpendicular to the outer periphery of the preset region of the dielectric substrate and using the opened via structure to constrain the propagation direction of the electromagnetic wave in the preset region to be parallel to the height direction of the via structure, the transmission direction of the electromagnetic wave is made perpendicular to the dielectric substrate, realizing the vertical transmission of the electromagnetic wave, thus realizing the vertical interconnection of channels in different planes, and further facilitating the integration with the structures on other plane channels.

[0077] This application also provides a communication device, and the communication device includes the dielectric waveguide vertical interconnection structure described above.

[0078] The communication device provided by this application adopts the dielectric waveguide vertical interconnection structure in the above embodiments, which can solve the technical problem in the prior art that there are interconnection problems in the channel connection of different planes, and it is not conducive to integrating with the structures on other plane channels. Compared with the prior art, the beneficial effects of the communication device provided by this application are the same as those of the dielectric waveguide vertical interconnection structure provided in the above embodiments, and the other technical features in the communication device are the same as the features disclosed in the above embodiments of the dielectric waveguide vertical interconnection structure, which will not be elaborated here.

[0079] The above are only some embodiments of this application, and thus do not limit the patent scope of this application. Any equivalent structural transformation made under the technical concept of this application by using the content of the specification and drawings of this application, or directly / indirectly applied in other related technical fields, is included in the patent protection scope of this application.

Claims

1. A dielectric waveguide vertical interconnection structure, characterized in that: The dielectric waveguide vertical interconnection structure comprises: a dielectric plate; A plurality of through-hole structures are vertically opened on the periphery of the preset area of ​​the dielectric plate; The through-hole structure is used to constrain the propagation direction of the electromagnetic wave input into the preset area to be parallel to the height direction of the through-hole structure.

2. The dielectric waveguide vertical interconnect structure according to claim 1, characterized in that: The dielectric plate comprises: a first conductor region and a second conductor region; The first conductor area and the second conductor area are arranged on two sides of the preset area; A plurality of the through-hole structures are provided in both the first conductor region and the second conductor region; The through-hole structure in the first conductor region and the through-hole structure in the second conductor region are symmetrical based on the preset region.

3. The dielectric waveguide vertical interconnect structure according to claim 2, characterized in that: The medium plate further comprises: a medium region; The dielectric region is disposed between the first conductor region and the second conductor region and includes the preset region; A portion of the medium region outside the preset region is provided with a plurality of the through-hole structures; Each of the through-hole structures in the dielectric region is symmetrical based on the preset region.

4. The dielectric waveguide vertical interconnect structure as claimed in claim 3, characterized in that: Each of the through-hole structures in the first conductor region and the second conductor region is a metal through-hole; The arrangement direction of each of the metal through holes is perpendicular to the propagation direction of the electromagnetic wave.

5. The dielectric waveguide vertical interconnect structure according to claim 3, characterized in that: Each of the through-hole structures in the medium region is an air through-hole; The arrangement direction of each of the air holes is perpendicular to the propagation direction of the electromagnetic wave.

6. A method for manufacturing a dielectric waveguide vertical interconnection structure, characterized in that: The method for manufacturing the dielectric waveguide interconnect structure comprises the following steps: Get the media board; A plurality of through-hole structures are vertically opened on the periphery of a preset area of ​​the dielectric plate; By adjusting each of the through-hole structures, the propagation direction of the electromagnetic wave input into the preset area is constrained to be parallel to the height direction of the through-hole structure.

7. The method for manufacturing a dielectric waveguide vertical interconnect structure according to claim 6, characterized in that: The through-hole structure includes a metal through-hole, and the step of vertically opening a plurality of through-hole structures on the periphery of a preset area of ​​the dielectric plate includes: Dividing a first conductor area and a second conductor area on both sides of the preset area of ​​the dielectric plate; A plurality of the metal through holes are respectively opened in the first conductor region and the second conductor region, and the metal through holes in the first conductor region and the metal through holes in the second conductor region are symmetrically distributed based on the preset area.

8. The method for manufacturing a dielectric waveguide vertical interconnect structure according to claim 7, characterized in that: The through hole structure further includes an air through hole, and after the step of dividing the first conductor area and the second conductor area on both sides of the preset area of ​​the dielectric plate, the step further includes: Dividing the area between the first conductor area and the second conductor area into a dielectric area, wherein the dielectric area includes the preset area; A plurality of the air through holes are opened in a portion of the medium region outside the preset region, and the air through holes in the medium region are symmetrically distributed based on the preset region.

9. The method for manufacturing a dielectric waveguide vertical interconnect structure according to claim 8, characterized in that: The step of constraining the propagation direction of the electromagnetic wave input into the preset area to be parallel to the height direction of the through-hole structure by adjusting the through-hole structure comprises: By adjusting the size parameters of each of the metal through holes, the electric field component of the electromagnetic wave in the direction perpendicular to the height of the metal through hole is constrained; The electric field component of the electromagnetic wave in the height direction of the air holes is constrained by adjusting the size parameters of each of the air holes.

10. A communication device, characterized in that: The communication device comprises the dielectric waveguide vertical interconnection structure according to any one of claims 1 to 5.

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