Controller based on silicon carbide power tube, control circuit and compressor

Abstract

The invention provides a controller based on silicon carbide power tubes, a control circuit and a compressor, the controller comprises a plurality of silicon carbide power tubes, a plurality of first fixing parts, a PCBA circuit board and a shell, and the PCBA circuit board is arranged in the shell; a pin area of each silicon carbide power tube is welded on the PCBA circuit board, and a heat dissipation area of each silicon carbide power tube is tightly attached to a controller bottom plate of the shell through a corresponding first fixing piece; the pin area of each silicon carbide power tube is provided with a gate pin, a power supply side source pin, a drain pin and a driving side source pin, and each first fixing piece is sleeved with an insulating particle; through the silicon carbide power tube with four pins, the power supply side source electrode pin is separated from the driving side source electrode pin, so that a driving signal is separated from a load current, and the interference of the current on a silicon carbide power driving signal is further reduced; and meanwhile, the problem that an application scene with a high response speed requirement cannot be met is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of compressor control, and particularly to a controller, a control circuit and a compressor based on silicon carbide power tubes. Background Art

[0002] Currently, traditional compressor controllers usually use IGBT power tubes to achieve power conversion and control. However, IGBT power tubes have a problem of relatively large output losses under high voltage and high power conditions, which not only causes energy waste but also increases the working temperature; and the excessively high working temperature not only reduces the service life of the power tubes but also may affect the performance and stability of the entire controller; in addition, the switching frequency of IGBT power tubes is relatively low, making it difficult to meet application scenarios with high requirements for response speed.

[0003] In addition, in terms of drive signals, multi-channel integrated drive chips have been mostly used to drive power tubes in the past. Although this method improves the integration degree, interference is likely to occur between channels; moreover, the pin design of traditional power tubes fails to effectively separate the drive signal from the load current, and the electromagnetic interference generated by the load current may be coupled to the drive signal, resulting in misoperation of the power tubes, thus affecting the stability of the entire compressor control system. Summary of the Invention

[0004] Embodiments of the present invention provide a controller, a control circuit and a compressor based on silicon carbide power tubes, aiming to solve the problems that the power tubes in the prior art cannot meet application scenarios with high response speed and the drive signals of the power tubes are easily interfered by the load current.

[0005] In a first aspect, embodiments of the present invention provide a controller based on silicon carbide power tubes, including: a plurality of silicon carbide power tubes, a plurality of first fixing members, a PCBA circuit board and a housing, the PCBA circuit board is disposed in the housing; the pin areas of each silicon carbide power tube among the plurality of silicon carbide power tubes are welded to the PCBA circuit board, and the heat dissipation areas of each silicon carbide power tube are tightly attached to the controller bottom plate of the housing through the corresponding first fixing member among the plurality of first fixing members; wherein, the pin area of each silicon carbide power tube is provided with a gate pin, a power-side source pin, a drain pin and a drive-side source pin; and an insulating particle is sleeved on each of the plurality of first fixing members.

[0006] Furthermore, it further includes a plurality of ceramic gaskets, each ceramic gasket among the plurality of ceramic gaskets is disposed between the heat dissipation area of the corresponding silicon carbide power tube among the plurality of silicon carbide power tubes and the controller bottom plate; and thermal conductive silicone grease is applied to both sides of each ceramic gasket.

[0007] Further, it further includes an insulating pad, and the insulating pad is disposed between the controller cover and the controller base plate of the housing.

[0008] Further, a low-voltage connector, a high-voltage connector, and a three-phase motor base are disposed on the controller base plate. The low-voltage connector and the high-voltage connector are adjacent to each other, and the three-phase motor base is located below the low-voltage connector and the high-voltage connector.

[0009] Further, the plurality of silicon carbide power tubes include a first silicon carbide power tube, a second silicon carbide power tube, a third silicon carbide power tube, a fourth silicon carbide power tube, a fifth silicon carbide power tube, and a sixth silicon carbide power tube. The first silicon carbide power tube and the second silicon carbide power tube are arranged in parallel; the third silicon carbide power tube and the fourth silicon carbide power tube are arranged in parallel; the fifth silicon carbide power tube and the sixth silicon carbide power tube are arranged in parallel.

[0010] In a second aspect, an embodiment of the present invention further provides a control circuit, which is applied to the controller based on surface-mounted silicon carbide power tubes in the first aspect. The control circuit includes a control chip, a driving module, and a three-phase half-bridge module. One end of the control chip is connected to one end of the driving module, the other end of the driving module is connected to the first end of the three-phase half-bridge module, the second end of the three-phase half-bridge module is connected to the positive electrode of an external high-voltage side power supply, the third end of the three-phase half-bridge module is connected to an external compressor, and the fourth end of the three-phase half-bridge module is connected to the negative electrode of the external high-voltage side power supply; Wherein, the three-phase half-bridge module includes a first bridge arm, a second bridge arm, and a third bridge arm connected in parallel with each other. The first bridge arm includes a first upper bridge arm circuit and a first lower bridge arm circuit connected in series with each other. The first upper bridge arm circuit is the first silicon carbide power tube, and the first lower bridge arm circuit is the second silicon carbide power tube; the second bridge arm includes a second upper bridge arm circuit and a second lower bridge arm circuit connected in series with each other. The second upper bridge arm circuit is the third silicon carbide power tube, and the second lower bridge arm circuit is the fourth silicon carbide power tube; the third bridge arm includes a third upper bridge arm circuit and a third lower bridge arm circuit connected in series with each other. The third upper bridge arm circuit is the fifth silicon carbide power tube, and the third lower bridge arm circuit is the sixth silicon carbide power tube; The control chip is configured to generate a three-phase half-bridge start signal and send it to the driving module when detecting a drive control signal; The driving module is configured to convert the three-phase half-bridge start signal into a three-phase half-bridge drive signal and send it to the three-phase half-bridge module; The three-phase half-bridge module is configured to drive the external compressor correspondingly according to the three-phase half-bridge drive signal and the voltage input from the external high-voltage side power supply.

[0011] Further, the driving module includes a first driving unit, a second driving unit, a third driving unit, a fourth driving unit, a fifth driving unit, and a sixth driving unit. One end of the first driving unit is connected to the control chip, and the other end of the first driving unit is connected to the first upper bridge arm circuit; One end of the second driving unit is connected to the control chip, and the other end of the second driving unit is connected to the first lower bridge arm circuit; One end of the third driving unit is connected to the control chip, and the other end of the third driving unit is connected to the second upper bridge arm circuit; One end of the fourth driving unit is connected to the control chip, and the other end of the fourth driving unit is connected to the second lower bridge arm circuit; One end of the fifth driving unit is connected to the control chip, and the other end of the fifth driving unit is connected to the third upper bridge arm circuit; One end of the sixth driving unit is connected to the control chip, and the other end of the sixth driving unit is connected to the third lower bridge arm circuit.

[0012] Further, the first driving unit includes a first driving chip, a first bootstrap circuit, and a second resistor. The first driving chip is connected to the first bootstrap circuit; The first driving chip is connected to one end of the second resistor, and the other end of the second resistor is connected to the first upper bridge arm circuit; The first bootstrap circuit includes a first capacitor, a first diode, a second diode, and a first resistor. The first end of the first capacitor is connected to the VEE2 pin of the first driving chip, the second end of the first capacitor is connected to the VCC2 pin of the first driving chip, the second end of the first capacitor is also connected to the negative electrode of the first diode, the positive electrode of the first diode is connected to the negative electrode of the second diode, the positive electrode of the second diode is connected to one end of the first resistor, and the other end of the first resistor is connected to a first external power supply; The IN+ pin of the first driving chip is connected to the control chip, the IN- pin and the GND1 pin of the first driving chip are both grounded, the VCC1 pin of the first driving chip is connected to a second external power supply, the OUT pin of the first driving chip is connected to one end of the second resistor, the other end of the second resistor is connected to the gate of the first silicon carbide power transistor in the first upper bridge arm circuit, the driving side source of the first silicon carbide power transistor is connected to the VEE2 pin of the first driving chip, the drain of the first silicon carbide power transistor is connected to the positive electrode of the high-voltage side power supply, and the power side source of the first silicon carbide power transistor is connected to the corresponding lower bridge arm circuit and is also connected to an external compressor.

[0013] Further, the second driving unit includes a second driving chip and a third resistor. The second driving chip is connected to one end of the third resistor, and the other end of the third resistor is connected to the first lower bridge arm circuit; The IN+ pin of the second driving chip is connected to the control chip. The IN- pin and the GND1 pin of the second driving chip are both grounded. The VCC2 pin of the second driving chip is connected to the first external power supply. The VCC1 pin of the second driving chip is connected to the second external power supply. The OUT pin of the second driving chip is connected to one end of the third resistor. The other end of the third resistor is connected to the gate of the second silicon carbide power transistor in the first lower bridge arm circuit. The driving side source of the second silicon carbide power transistor is connected to the VEE2 pin of the second driving chip. The drain of the second silicon carbide power transistor is connected to the power side source of the first silicon carbide power transistor and is also connected to an external compressor. The power side source of the second silicon carbide power transistor is connected to the negative pole of the external high-voltage side power supply through the ninth resistor.

[0014] In a third aspect, an embodiment of the present invention further provides a compressor, including the control circuit described in the second aspect.

[0015] An embodiment of the present invention provides a controller, a control circuit, and a compressor based on silicon carbide power transistors. The controller includes a plurality of silicon carbide power transistors, a plurality of first fixing members, a PCBA circuit board, and a housing. The PCBA circuit board is disposed inside the housing; the pin regions of each silicon carbide power transistor are soldered to the PCBA circuit board, and the heat dissipation regions of each silicon carbide power transistor are tightly attached to the controller bottom plate of the housing through the corresponding first fixing members; the pin regions of each silicon carbide power transistor are provided with gate pins, power side source pins, drain pins, and driving side source pins, and insulating grains are sleeved on each first fixing member; thus, by using silicon carbide power transistors with four pins, the power side source pins are separated from the driving side source pins, so that the driving signal is separated from the load current, thereby reducing the interference of the current on the silicon carbide power driving signal; at the same time, the problem of being unable to meet the application scenarios with higher response speed requirements is solved. Description of the Drawings

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0017] Figure 1 It is an exploded view of a controller based on silicon carbide power transistors provided by an embodiment of the present invention; Figure 2 It is a cross-sectional view of a controller based on silicon carbide power transistors provided by an embodiment of the present invention; Figure 3Schematic diagram of a controller based on a silicon carbide power transistor provided by an embodiment of the present invention; Figure 4 Another schematic diagram of a controller based on a silicon carbide power transistor provided by an embodiment of the present invention; Figure 5 Schematic block diagram of a control circuit provided by an embodiment of the present invention; Figure 6 Partial circuit schematic diagram of a control circuit provided by an embodiment of the present invention. Detailed implementation manners

[0018] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0019] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprise" indicate the presence of the described features, wholes, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or their combinations.

[0020] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in this specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms.

[0021] It should be further understood that the term " / and" used in this specification of the present invention and the appended claims refers to any combination and all possible combinations of one or more of the related listed items, and includes these combinations.

[0022] Please refer to Figure 1 、 Figure 2 and Figure 4, a first aspect of the present invention provides a controller based on a silicon carbide power transistor, comprising: a plurality of silicon carbide power transistors 1, a plurality of first fixing members 2, a PCBA circuit board 3, and a housing 4, wherein the PCBA circuit board 3 is disposed within the housing 4; the pin regions of each of the plurality of silicon carbide power transistors 1 are soldered to the PCBA circuit board 3, and the heat dissipation regions of each of the plurality of silicon carbide power transistors 1 are attached to the controller bottom plate 41 of the housing 4 through corresponding ones of the plurality of first fixing members 2; wherein, each pin region of each of the plurality of silicon carbide power transistors 1 is provided with a gate pin, a power-side source pin, a drain pin, and a drive-side source pin; and an insulating particle 5 is sleeved on each of the plurality of first fixing members 2.

[0023] In this embodiment, the controller based on the silicon carbide power transistor is mainly applied to the compressor of a new energy vehicle air conditioner, and mainly consists of a plurality of silicon carbide power transistors 1, a plurality of first fixing members 2, a PCBA circuit board 3, and a housing 4; wherein, the housing 4 includes a controller bottom plate 41 and a controller cover 42; the controller bottom plate 41 is provided with an installation cavity, the PCBA circuit board 3 is located within the installation cavity, and the PCBA circuit board 3 is detachably connected to the controller bottom plate 41 through a plurality of second fixing members 10; the controller cover 42 covers the PCBA circuit board 3, and the controller cover 42 is detachably connected to the controller bottom plate 41 through a plurality of third fixing members 11. The pin regions of each of the plurality of silicon carbide power transistors 1 are soldered to corresponding regions of the PCBA circuit board 3, wherein, each pin region of each of the plurality of silicon carbide power transistors 1 is provided with four pins, namely a gate pin, a power-side source pin, a drain pin, and a drive-side source pin. Thus, by using a silicon carbide power transistor 1 with four pins, the power pins (i.e., the power-side source pins) are separated from the signal pins (i.e., the drive-side source pins), so that the drive signal is separated from the load current, thereby reducing the interference of the load current on the silicon carbide power drive signal. And a first fixing hole is provided on the heat dissipation region of each of the plurality of silicon carbide power transistors 1, and each of the plurality of first fixing members 2 can pass through the corresponding first fixing hole to fix and attach the corresponding silicon carbide power transistor 1 tightly to the controller bottom plate 41; wherein, the controller bottom plate 41 is a metal heat dissipation surface, and fixing the heat dissipation regions of each of the plurality of silicon carbide power transistors 1 on the metal heat dissipation surface is beneficial to the heat dissipation of the silicon carbide power transistor 1, and thus can improve the application power of the silicon carbide power in the actual circuit.

[0024] More specifically, the plurality of first fixing members 2 are preferably silicon carbide power transistor fixing screws in this embodiment, the plurality of second fixing members 10 are preferably PCBA fixing screws in this embodiment, and the plurality of third fixing members 11 are preferably controller housing cover 42 fixing screws in this embodiment. In addition, when each silicon carbide power transistor 1 operates, there are high voltages and large currents around it, and the corresponding first fixing member 2 is usually made of metal and has electrical conductivity. If the first fixing member 2 accidentally contacts surrounding conductive components (such as the pins of the silicon carbide power transistor 1, etc.), a short-circuit fault may be triggered; therefore, in this embodiment, an insulating particle 5 is sleeved on each of the plurality of first fixing members 2 to increase the creepage distance and reduce electrical interference at the same time.

[0025] The controller based on silicon carbide power transistors in this embodiment uses a silicon carbide power transistor 1 with four pins. Compared with traditional IGBT power transistors, it reduces the output loss, lowers the operating temperature, and improves the output power efficiency; and separates the source pin on the power supply side from the source pin on the drive side, so that the drive signal is separated from the load current, thereby reducing the interference of the current on the silicon carbide power drive signal; at the same time, it solves the problem that it cannot meet the application scenarios with higher response speed requirements.

[0026] In one embodiment, as Figures 1 to 2 shown, it further includes a plurality of ceramic gaskets 6. Each of the plurality of ceramic gaskets 6 is disposed between the heat dissipation area of the corresponding silicon carbide power transistor 1 among the plurality of silicon carbide power transistors 1 and the controller base plate 41; and thermal conductive silicone grease is applied on both sides of each ceramic gasket 6.

[0027] In this embodiment, a plurality of ceramic gaskets 6 are also provided on the controller based on silicon carbide power transistors. Among them, each of the plurality of ceramic gaskets 6 is disposed in the middle between the heat dissipation area of the corresponding silicon carbide power transistor 1 among the plurality of silicon carbide power transistors 1 and the controller base plate 41; among them, each ceramic gasket 6 is preferably an alumina ceramic gasket in this embodiment, which has good insulation performance and can isolate the corresponding silicon carbide power transistor 1 from the controller base plate 41, thereby preventing electrical short circuits between the two and ensuring electrical safety; at the same time, in order to improve the heat dissipation effect, thermal conductive silicone grease is applied on both side surfaces of each ceramic gasket 6 (i.e., the side surface in contact with the heat dissipation area of the corresponding silicon carbide power transistor 1 and the side surface in contact with the controller base plate 41), thereby facilitating the heat dissipation of the silicon carbide power transistor 1.

[0028] In one embodiment, as Figure 1 、 Figure 2 and Figure 4 shown, it further includes an insulating gasket 12, and the insulating gasket 12 is disposed between the controller housing cover 42 of the housing 4 and the controller base plate 41.

[0029] In this embodiment, since there are circuits and components with different potentials inside the controller based on silicon carbide power transistors, if the controller cover 42 is in direct contact with the controller base plate 41, problems such as short circuit and electric leakage may occur. To avoid these problems, an insulating pad 12 is provided between the controller cover 42 and the controller base plate 41 to ensure electrical safety. At the same time, the insulating pad 12 can play a role in sealing and protection.

[0030] In one embodiment, as Figures 1 to 3 shown, a low-voltage connector 7, a high-voltage connector 8, and a three-phase motor base 9 are provided on the controller base plate 41. The low-voltage connector 7 and the high-voltage connector 8 are arranged adjacent to each other, and the three-phase motor base 9 is located below the low-voltage connector 7 and the high-voltage connector 8.

[0031] In this embodiment, to ensure the normal operation of the controller based on silicon carbide power transistors, a low-voltage connector 7, a high-voltage connector 8, and a three-phase motor base 9 are provided on the controller base plate 41. Among them, the low-voltage connector 7 is used to connect to low-voltage direct current to provide the required low voltage for the low-voltage components in the controller based on silicon carbide power transistors; the high-voltage connector is used to connect to high-voltage direct current to provide the required high voltage for the low-voltage components in the controller based on silicon carbide power transistors; the three-phase motor base 9 is the interface for connecting the controller to an external compressor, so as to connect the three-phase alternating current output by the controller to the motor of the external compressor to achieve precise adjustment of parameters such as the rotational speed and torque of the motor.

[0032] In one embodiment, the several silicon carbide power transistors 1 include a first silicon carbide power transistor 1, a second silicon carbide power transistor 1, a third silicon carbide power transistor 1, a fourth silicon carbide power transistor 1, a fifth silicon carbide power transistor 1, and a sixth silicon carbide power transistor 1. The first silicon carbide power transistor 1 and the second silicon carbide power transistor 1 are arranged in parallel; the third silicon carbide power transistor 1 and the fourth silicon carbide power transistor 1 are arranged in parallel; the fifth silicon carbide power transistor 1 and the sixth silicon carbide power transistor 1 are arranged in parallel.

[0033] In this embodiment, this embodiment is a preferred embodiment of the number of the plurality of silicon carbide power tubes 1. Specifically, the plurality of silicon carbide power tubes 1 include a first silicon carbide power tube 1, a second silicon carbide power tube 1, a third silicon carbide power tube 1, a fourth silicon carbide power tube 1, a fifth silicon carbide power tube 1, and a sixth silicon carbide power tube 1. The first silicon carbide power tube 1 and the second silicon carbide power tube 1 are arranged side by side vertically; the third silicon carbide power tube 1 and the fourth silicon carbide power tube 1 are arranged side by side vertically; the fifth silicon carbide power tube 1 and the sixth silicon carbide power tube 1 are arranged side by side vertically. Thus, a three-phase half-bridge circuit is formed by the first silicon carbide power tube 1, the second silicon carbide power tube 1, the third silicon carbide power tube 1, the fourth silicon carbide power tube 1, the fifth silicon carbide power tube 1, and the sixth silicon carbide power tube 1. Furthermore, the motor in the external compressor is driven through the three-phase half-bridge circuit.

[0034] Please refer to Figures 5 to 6 , Figure 5 which is a schematic block diagram of a control circuit provided by an embodiment of the present invention; Figure 6 which is a partial circuit schematic diagram of a control circuit provided by an embodiment of the present invention; wherein, Figure 6 is a circuit diagram in which the first driving unit and the second driving unit of the driving module in the control circuit are correspondingly connected to the first upper bridge arm circuit and the first lower bridge arm circuit of the three-phase half-bridge module; A second aspect of the present invention provides a control circuit 100, which is applied to the controller based on the surface-mounted silicon carbide power tube in the first aspect. The control circuit 100 includes a control chip 110, a driving module 120, and a three-phase half-bridge module 130. One end of the control chip 110 is connected to one end of the driving module 120. The other end of the driving module 120 is connected to the first end of the three-phase half-bridge module 130. The second end of the three-phase half-bridge module 130 is connected to the positive pole of the external high-voltage side power supply. The third end of the three-phase half-bridge module 130 is connected to the external compressor. The fourth end of the three-phase half-bridge module 130 is connected to the negative pole of the external high-voltage side power supply; Among them, the three-phase half-bridge module 130 includes a first bridge arm, a second bridge arm, and a third bridge arm connected in parallel with each other. The first bridge arm includes a first upper bridge arm circuit and a first lower bridge arm circuit connected in series with each other. The first upper bridge arm circuit is a first silicon carbide power tube Q8, and the first lower bridge arm circuit is a second silicon carbide power tube Q5; The second bridge arm includes a second upper bridge arm circuit and a second lower bridge arm circuit connected in series with each other. The second upper bridge arm circuit is a third silicon carbide power tube, and the second lower bridge arm circuit is a fourth silicon carbide power tube; The third bridge arm includes a third upper bridge arm circuit and a third lower bridge arm circuit connected in series with each other. The third upper bridge arm circuit is a fifth silicon carbide power tube, and the third lower bridge arm circuit is a sixth silicon carbide power tube; The control chip 110 is configured to generate a three-phase half-bridge start signal and send it to the drive module 120 when a drive control signal is detected; The drive module 120 is configured to convert the three-phase half-bridge start signal into a three-phase half-bridge drive signal and send it to the three-phase half-bridge module 130; The three-phase half-bridge module 130 is configured to drive an external compressor correspondingly according to the three-phase half-bridge drive signal and the voltage input from an external high-voltage side power supply.

[0035] In this embodiment, in order to realize the drive of the external compressor connected to the three-phase half-bridge module 130, the control circuit 100 in the present application can be adopted. Specifically, the three-phase half-bridge module 130 in the control circuit 100 of the present application includes a first bridge arm, a second bridge arm, and a third bridge arm connected in parallel. The first bridge arm includes a first upper bridge arm circuit and a first lower bridge arm circuit connected in series; the second bridge arm includes a second upper bridge arm circuit and a second lower bridge arm circuit connected in series; the third bridge arm includes a third upper bridge arm circuit and a third lower bridge arm circuit connected in series. Among them, the first upper bridge arm circuit, the first lower bridge arm circuit, the second upper bridge arm circuit, the second lower bridge arm circuit, the third upper bridge arm circuit, and the third lower bridge arm circuit are all silicon carbide power transistors including four pins: a gate pin, a power supply side source pin, a drain pin, and a drive side source pin, so as to reduce output loss, lower the working temperature, and improve the output power efficiency through the silicon carbide power transistors; and separate the power supply side source pin from the drive side source pin, so that when the silicon carbide power transistor works, the drive signal of the silicon carbide power transistor is separated from the load current, thereby reducing the interference of the current on the silicon carbide power drive signal.

[0036] During specific implementation, when the control chip 110 detects a drive control signal, it generates a three-phase half-bridge start signal and sends it to the drive module 120; among them, the control chip 110 can be specifically a DSP chip in this embodiment (the full name of DSP is Digital Signal Process, indicating digital signal processing); the drive module 120 receives the three-phase half-bridge start signal, converts the three-phase half-bridge start signal into a three-phase half-bridge drive signal, and sends it to the three-phase half-bridge module 130; at this time, the three-phase half-bridge module 130 receives the three-phase half-bridge drive signal and drives the external compressor to work correspondingly according to the three-phase half-bridge drive signal and the voltage input from an external high-voltage side power supply.

[0037] In one embodiment, such as Figure 5 and Figure 6As shown, the driving module 120 includes a first driving unit, a second driving unit, a third driving unit, a fourth driving unit, a fifth driving unit, and a sixth driving unit. One end of the first driving unit is connected to the control chip 110, and the other end of the first driving unit is connected to the first upper bridge arm circuit; one end of the second driving unit is connected to the control chip 110, and the other end of the second driving unit is connected to the first lower bridge arm circuit; one end of the third driving unit is connected to the control chip 110, and the other end of the third driving unit is connected to the second upper bridge arm circuit; one end of the fourth driving unit is connected to the control chip 110, and the other end of the fourth driving unit is connected to the second lower bridge arm circuit; one end of the fifth driving unit is connected to the control chip 110, and the other end of the fifth driving unit is connected to the third upper bridge arm circuit; one end of the sixth driving unit is connected to the control chip 110, and the other end of the sixth driving unit is connected to the third lower bridge arm circuit.

[0038] In this embodiment, due to the insufficient isolation performance of the existing driving module 120, in order to protect the control circuit 100 from high voltage damage, the driving module 120 in this embodiment includes six driving units, namely, a first driving unit, a second driving unit, a third driving unit, a fourth driving unit, a fifth driving unit, and a sixth driving unit. These six driving units correspond one-to-one with the six silicon carbide power tubes in the three-phase half-bridge module 130, and each driving unit can only drive a single silicon carbide power tube. Specifically, one end of the first driving unit is connected to the control chip 110, and the other end is connected to the first upper bridge arm circuit; one end of the second driving unit is connected to the control chip 110, and the other end is connected to the first lower bridge arm circuit; one end of the third driving unit is connected to the control chip 110, and the other end is connected to the second upper bridge arm circuit; one end of the fourth driving unit is connected to the control chip 110, and the other end is connected to the second lower bridge arm circuit; one end of the fifth driving unit is connected to the control chip 110, and the other end is connected to the third upper bridge arm circuit; one end of the sixth driving unit is connected to the control chip 110, and the other end is connected to the third lower bridge arm circuit. Thus, each driving unit in the driving module 120 completely isolates the input side (i.e., the three-phase half-bridge start signal sent by the control chip 110) from the output side (i.e., the corresponding silicon carbide power tube), so as to prevent the transient voltage or noise on the high-voltage side from affecting the low-voltage side, and at the same time protect the control circuit 100 from high voltage damage.

[0039] In one embodiment, as Figure 5 and Figure 6As shown, the first driving unit includes a first driving chip U13, a first bootstrap circuit and a second resistor R2. The first driving chip U13 is connected to the first bootstrap circuit. The first driving chip U13 is connected to one end of the second resistor R2, and the other end of the second resistor R2 is connected to the first upper bridge arm circuit. The first bootstrap circuit includes a first capacitor C1, a first diode D1, a second diode D2 and a first resistor R1. The first end of the first capacitor C1 is connected to the VEE2 pin of the first driving chip U13. The second end of the first capacitor C1 is connected to the VCC2 pin of the first driving chip U13. The second end of the first capacitor C1 is also connected to the negative electrode of the first diode D1. The positive electrode of the first diode D1 is connected to the negative electrode of the second diode D2. The positive electrode of the second diode D2 is connected to one end of the first resistor R1. The other end of the first resistor R1 is connected to a first external power supply. The IN+ pin of the first driving chip U13 is connected to the control chip 110. The IN- pin and the GND1 pin of the first driving chip U13 are both grounded. The VCC1 pin of the first driving chip U13 is connected to a second external power supply. The OUT pin of the first driving chip U13 is connected to one end of the second resistor R2. The other end of the second resistor R2 is connected to the gate of the first silicon carbide power transistor Q8 in the first upper bridge arm circuit. The driving side source of the first silicon carbide power transistor Q8 is connected to the VEE2 pin of the first driving chip U13. The drain of the first silicon carbide power transistor Q8 is connected to the positive electrode of the high-voltage side power supply. The power supply side source of the first silicon carbide power transistor Q8 is connected to the corresponding lower bridge arm circuit and is also connected to an external compressor.

[0040] In this embodiment, in the bridge circuit, since the source voltage of the power transistor in the upper bridge arm circuit changes with the output, it is difficult to directly drive the gate of the power transistor to meet the conduction condition. Therefore, in this embodiment, the first driving unit includes not only the first driving chip U13 but also a first bootstrap circuit. The first driving chip U13 is connected to the first bootstrap circuit, so that the voltage flowing through the gate of the silicon carbide power transistor is increased by using the first bootstrap circuit. Among them, the first driving chip U13 is a single-channel isolated driving chip, and the first driving chip U13 can be a chip of models such as PN7902M and SiLM5350 in this embodiment. And the third driving chip and the fifth driving chip are of the same model as the first driving chip U13, which will not be elaborated here one by one.

[0041] Specifically, the first bootstrap circuit includes a first capacitor C1, a first diode D1, a second diode D2, and a first resistor R1. Among them, the first end of the first capacitor C1 is connected to the VEE2 pin of the first driving chip U13, the second end of the first capacitor C1 is connected to the VCC2 pin of the first driving chip U13, the second end of the first capacitor C1 is also connected to the negative electrode of the first diode D1, the positive electrode of the first diode D1 is connected to the negative electrode of the second diode D2, the positive electrode of the second diode D2 is connected to one end of the first resistor R1, and the other end of the first resistor R1 is connected to a first external power supply. When the second silicon carbide power transistor Q5 in the first lower arm circuit is turned on, the first external power supply charges the first capacitor C1 through the first resistor R1, the first diode D1, and the second diode D2. When the first silicon carbide power transistor Q8 in the first upper arm circuit needs to be turned on, the first capacitor C1 starts to discharge to supply the first driving chip U13, so as to turn on the first silicon carbide power transistor Q8. Herein, the first external power supply in this embodiment represents a +15V voltage; the second external power supply represents +3.3V.

[0042] In addition, the gate of the first silicon carbide power transistor Q8 is connected to one end of a fourth resistor R4 in the first driving unit and to one end of a fifth resistor R5 in the first driving unit; the gate of the first silicon carbide power transistor Q8 is also connected to the CLAMP pin of the first driving chip U13 to prevent false conduction caused by Miller current; and the other end of the fourth resistor R4 is connected to one end of a second capacitor C2 in the first driving unit; the driving side source of the first silicon carbide power transistor Q8 is connected to the other end of the second capacitor C2 and also to the other end of the fifth resistor R5.

[0043] More specifically, the flow direction of the driving signal channel in the first upper arm circuit is sequentially from the control chip 110 to output a three-phase half-bridge start signal (PWMU+), through the positive-phase gate driving voltage control input IN+ pin, the driving output OUT pin, the second resistor R2, the gate of the first silicon carbide power transistor Q8, the driving side source of the first silicon carbide power transistor Q8, and then back to the output ground VEE2 pin of the first driving chip U13 to form a loop; and the flow direction of the load current channel in the first upper arm circuit is sequentially from the P pole, the drain of the first silicon carbide power transistor Q8, the power supply side source of the first silicon carbide power transistor Q8, and then through the U-phase output terminal to be connected to an external compressor. Thus, the separation of the driving signal channel and the load current channel in the first upper arm circuit is achieved, and further, the interference of the load current on the first silicon carbide power driving signal is reduced. Among them, Figure 6 P therein represents the positive electrode of the high-voltage side power supply.

[0044] Moreover, the circuits of the third driving unit and the fifth driving unit are similar to the circuit of the first driving unit. The connection relationships between the third driving unit and the third silicon carbide power transistor in the second upper bridge arm circuit, and between the fifth driving unit and the fifth silicon carbide power transistor in the third upper bridge arm circuit are similar to the connection relationship between the first driving unit and the first silicon carbide power transistor Q8 in the first upper bridge arm circuit, and thus will not be elaborated one by one here.

[0045] In an embodiment, as Figure 5 and Figure 6 shown, the second driving unit includes a second driving chip U12 and a third resistor R3. One end of the third resistor R3 is connected to the second driving chip U12, and the other end of the third resistor R3 is connected to the first lower bridge arm circuit; The IN+ pin of the second driving chip U12 is connected to the control chip 110. The IN- pin and the GND1 pin of the second driving chip U12 are both grounded. The VCC2 pin of the second driving chip U12 is connected to the first external power supply. The VCC1 pin of the second driving chip U12 is connected to the second external power supply. The OUT pin of the second driving chip U12 is connected to one end of the third resistor R3, and the other end of the third resistor R3 is connected to the gate of the second silicon carbide power transistor Q5 in the first lower bridge arm circuit. The driving side source of the second silicon carbide power transistor Q5 is connected to the VEE2 pin of the second driving chip U12. The drain of the second silicon carbide power transistor Q5 is connected to the power supply side source of the first silicon carbide power transistor Q8 and is also connected to an external compressor. The power supply side source of the second silicon carbide power transistor Q5 is connected to the negative pole of the external high-voltage side power supply through a ninth resistor R9.

[0046] In this embodiment, the second driving unit includes a first driving chip U13 and a third resistor R3. One end of the third resistor R3 is connected to the second driving chip U12, and the other end of the third resistor R3 is connected to the first lower bridge arm circuit. The second driving chip U12 is a single-channel isolated driving chip, and in this embodiment, the second driving chip U12 can be a chip of models such as PN7902M and SiLM5350. Moreover, the fourth driving chip and the sixth driving chip are of the same model as the second driving chip U12, and thus will not be elaborated one by one here.

[0047] In addition, the gate of the second silicon carbide power transistor Q5 in the first lower arm circuit is connected to one end of the sixth resistor R6 in the first driving unit and one end of the seventh resistor R7 in the first driving unit; the gate of the first silicon carbide power transistor Q8 is also connected to the CLAMP pin of the second driving chip U12 to prevent false connection caused by Miller current; and the other end of the sixth resistor R6 is connected to one end of the third capacitor C3 in the second driving unit; the driving side source of the second silicon carbide power transistor Q5 is connected to the other end of the third capacitor C3 and also to the other end of the seventh resistor R7. Moreover, the second driving unit further includes a fourth capacitor C4, a fifth capacitor C5, and an eighth resistor R8; wherein, one end of the fourth capacitor C4 is connected to the VCC2 pin of the second driving chip U12, and the other end is connected to ground and to one end of the eighth resistor R8; one end of the fifth capacitor C5 is connected to the VCC2 pin of the second driving chip U12, the other end is connected to the VEE2 pin of the second driving chip U12 and also to the driving side source of the second silicon carbide power transistor Q5, and the other end of the eighth resistor R8 is connected to ground and also to the IN- pin and GND1 pin of the second driving chip U12.

[0048] More specifically, the flow direction of the driving signal channel in the first lower arm circuit is sequentially from the control chip 110 to output a three-phase half-bridge start signal (PWMU-), through the positive-phase gate driving voltage control input IN+ pin, driving output OUT pin, third resistor R3, gate of the second silicon carbide power transistor Q5, driving side source of the second silicon carbide power transistor Q5, and then back to the output ground VEE2 pin of the second driving chip U12 to form a loop; while the flow direction of the load current channel in the first lower arm circuit is sequentially from the U-phase output, drain of the second silicon carbide power transistor Q5, power side source of the second silicon carbide power transistor Q5, and then to the N pole. Thus, the separation of the driving signal channel and the load current channel in the first lower arm circuit is achieved, and further, the interference of the load current on the second silicon carbide power driving signal is reduced. Among them, Figure 6 the N pole herein represents the negative pole of the high-voltage side power supply.

[0049] Moreover, the circuits of the fourth driving unit and the sixth driving unit are both similar to the circuit of the second driving unit, and the connection relationship between the fourth driving unit and the fourth silicon carbide power transistor in the second lower arm circuit, and the connection relationship between the sixth driving unit and the sixth silicon carbide power transistor in the third lower arm circuit are both similar to the connection relationship between the second driving unit and the second silicon carbide power transistor Q5 in the first lower arm circuit, and will not be elaborated one by one here.

[0050] Please refer to Figures 5 to 6, a third aspect of the present invention provides a compressor, including the control circuit 100 described in the second aspect.

[0051] In this embodiment, the present invention provides a compressor, and the compressor includes the control circuit 100 in any of the foregoing embodiments. This embodiment can solve the problem of not being able to meet the application scenarios with high response speed requirements through the control circuit 100, and at the same time separate the drive signal from the load current, reducing the interference of the current on the silicon carbide power drive signal.

[0052] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of various equivalent modifications or substitutions, and these modifications or substitutions should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A controller based on silicon carbide power tube, characterized in that: include: A plurality of silicon carbide power tubes, a plurality of first fixing members, a PCBA circuit board and a shell, wherein the PCBA circuit board is arranged in the shell; the pin area of ​​each silicon carbide power tube among the plurality of silicon carbide power tubes is welded on the PCBA circuit board, and the heat dissipation area of ​​each silicon carbide power tube is closely attached to the controller bottom plate of the shell through the corresponding first fixing member among the plurality of first fixing members; wherein the pin area of ​​each silicon carbide power tube is provided with a gate pin, a power supply side source pin, a drain pin and a drive side source pin; and each of the plurality of first fixing members is sleeved with insulating particles.

2. The controller based on silicon carbide power tube according to claim 1, characterized in that: It also includes a plurality of ceramic gaskets, each of which is arranged between the heat dissipation area of ​​the corresponding silicon carbide power tube among the plurality of silicon carbide power tubes and the controller base plate; and both sides of each ceramic gasket are coated with thermal grease.

3. The controller based on silicon carbide power tube according to claim 1, characterized in that: It also includes an insulating pad, which is arranged between the controller shell cover of the shell and the controller bottom plate.

4. The controller based on silicon carbide power tube according to claim 1, characterized in that: The controller bottom plate is provided with a low-voltage connector, a high-voltage connector and a three-phase motor seat, the low-voltage connector is arranged adjacent to the high-voltage connector, and the three-phase motor seat is located below the low-voltage connector and the high-voltage connector.

5. The controller based on silicon carbide power tube according to claim 1, characterized in that: The several silicon carbide power tubes include a first silicon carbide power tube, a second silicon carbide power tube, a third silicon carbide power tube, a fourth silicon carbide power tube, a fifth silicon carbide power tube and a sixth silicon carbide power tube. The first silicon carbide power tube and the second silicon carbide power tube are arranged in parallel; the third silicon carbide power tube and the fourth silicon carbide power tube are arranged in parallel; the fifth silicon carbide power tube and the sixth silicon carbide power tube are arranged in parallel.

6. A control circuit, applied to a controller based on a SMD silicon carbide power tube according to any one of claims 1 to 5, characterized in that: The control circuit comprises a control chip, a drive module and a three-phase half-bridge module, one end of the control chip is connected to one end of the drive module, the other end of the drive module is connected to the first end of the three-phase half-bridge module, the second end of the three-phase half-bridge module is connected to the positive electrode of the external high-voltage side power supply, the third end of the three-phase half-bridge module is connected to the external compressor, and the fourth end of the three-phase half-bridge module is connected to the negative electrode of the external high-voltage side power supply; Wherein, the three-phase half-bridge module includes a first bridge arm, a second bridge arm and a third bridge arm connected in parallel, the first bridge arm includes a first upper bridge arm circuit and a first lower bridge arm circuit connected in series, the first upper bridge arm circuit is a first silicon carbide power tube, and the first lower bridge arm circuit is a second silicon carbide power tube; the second bridge arm includes a second upper bridge arm circuit and a second lower bridge arm circuit connected in series, the second upper bridge arm circuit is a third silicon carbide power tube, and the second lower bridge arm circuit is a fourth silicon carbide power tube; the third bridge arm includes a third upper bridge arm circuit and a third lower bridge arm circuit connected in series, the third upper bridge arm circuit is a fifth silicon carbide power tube, and the third lower bridge arm circuit is a sixth silicon carbide power tube; The control chip is used to generate a three-phase half-bridge start signal and send it to the drive module when a drive control signal is detected; The driving module is used to convert the three-phase half-bridge starting signal into a three-phase half-bridge driving signal, and send it to the three-phase half-bridge module; The three-phase half-bridge module is used to drive an external compressor according to the three-phase half-bridge driving signal and the voltage input from the external high-voltage side power supply.

7. The control circuit according to claim 6, characterized in that: The driving module includes a first driving unit, a second driving unit, a third driving unit, a fourth driving unit, a fifth driving unit and a sixth driving unit, wherein one end of the first driving unit is connected to the control chip, and the other end of the first driving unit is connected to the first upper bridge arm circuit; one end of the second driving unit is connected to the control chip, and the other end of the second driving unit is connected to the first lower bridge arm circuit; one end of the third driving unit is connected to the control chip, and the other end of the third driving unit is connected to the second upper bridge arm circuit; one end of the fourth driving unit is connected to the control chip, and the other end of the fourth driving unit is connected to the second lower bridge arm circuit; one end of the fifth driving unit is connected to the control chip, and the other end of the fifth driving unit is connected to the third upper bridge arm circuit; one end of the sixth driving unit is connected to the control chip, and the other end of the sixth driving unit is connected to the third lower bridge arm circuit.

8. The control circuit according to claim 7, characterized in that: The first driving unit includes a first driving chip, a first bootstrap circuit and a second resistor, the first driving chip is connected to the first bootstrap circuit; the first driving chip is connected to one end of the second resistor, and the other end of the second resistor is connected to the first upper bridge arm circuit; The first bootstrap circuit includes a first capacitor, a first diode, a second diode and a first resistor, wherein a first end of the first capacitor is connected to a VEE2 pin of the first driver chip, a second end of the first capacitor is connected to a VCC2 pin of the first driver chip, the second end of the first capacitor is also connected to a cathode of the first diode, an anode of the first diode is connected to a cathode of the second diode, an anode of the second diode is connected to one end of the first resistor, and the other end of the first resistor is connected to a first external power supply; The IN+ pin of the first driver chip is connected to the control chip, the IN- pin and the GND1 pin of the first driver chip are both grounded, the VCC1 pin of the first driver chip is connected to the second external power supply, the OUT pin of the first driver chip is connected to one end of the second resistor, the other end of the second resistor is connected to the gate of the first silicon carbide power tube in the first upper bridge arm circuit, the driving side source of the first silicon carbide power tube is connected to the VEE2 pin of the first driver chip, the drain of the first silicon carbide power tube is connected to the positive electrode of the high-voltage side power supply, the power supply side source of the first silicon carbide power tube is connected to the corresponding lower bridge arm circuit, and is also connected to an external compressor.

9. The control circuit according to claim 8, characterized in that: The second driving unit includes a second driving chip and a third resistor, the second driving chip is connected to one end of the third resistor, and the other end of the third resistor is connected to the first lower bridge arm circuit; The IN+ pin of the second driver chip is connected to the control chip, the IN- pin and the GND1 pin of the second driver chip are both grounded, the VCC2 pin of the second driver chip is connected to the first external power supply, the VCC1 pin of the second driver chip is connected to the second external power supply, the OUT pin of the second driver chip is connected to one end of the third resistor, the other end of the third resistor is connected to the gate of the second silicon carbide power tube in the first lower bridge arm circuit, the driving side source of the second silicon carbide power tube is connected to the VEE2 pin of the second driver chip, the drain of the second silicon carbide power tube is connected to the power side source of the first silicon carbide power tube, and is also connected to an external compressor, and the power side source of the second silicon carbide power tube is connected to the negative electrode of the external high-voltage side power supply through a ninth resistor.

10. A compressor, characterized in that: The control circuit comprises the control circuit described in any one of claims 6 to 9.

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