Light-emitting structure and lighting device

Abstract

The invention provides a light-emitting structure only comprising a chip or combining the chip with a color conversion material and a lighting device, and relates to the field of semiconductors. The device generates a full-spectrum illumination light source and comprises at least one light-emitting diode chip, the light-emitting diode chip comprises an N-type semiconductor layer, a P-type semiconductor layer, a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer is located on the side, close to the P-type semiconductor layer, of the second light-emitting layer; the first light-emitting layer generates light of at least one wave band in an electroluminescent mode, the light generated by the first light-emitting layer excites the second light-emitting layer to generate light of at least one wave band, and the light of each wave band comprises at least one wavelength. And wavebands corresponding to all light rays generated by the light-emitting structure at least comprise a blue waveband, a cyan waveband, a green waveband, a yellow waveband and a red waveband. The full-spectrum illumination light source spectrum generated by the light-emitting structure is good in continuity and closer to natural light, and meanwhile spectrum energy distribution is good in stability along with current change.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and particularly to a light-emitting structure and a lighting device. Background Art

[0002] A light-emitting diode (LED), as a light-emitting device that converts electrical energy into light energy, has the advantages of energy conservation, environmental protection, long service life, and high luminous efficiency, and is widely used in many fields such as indication, display, decoration, and lighting. At the same time, the light-emitting diode has shifted from the initial goal of pursuing high luminous efficiency and low cost to achieve energy conservation and expand market penetration rate to a new stage of pursuing light quality and health goals. Healthy lighting has attracted more and more attention from the public, and full-spectrum lighting has become one of the important basic technologies for future healthy lighting.

[0003] Full-spectrum lighting, that is, a continuous spectrum similar to sunlight. Currently, full-spectrum lighting is mainly achieved by encapsulating multiple single-wavelength light-emitting diode chips and phosphors together, or by encapsulating a single multi-wavelength light-emitting diode chip and phosphors together. However, in the former case, the number of light-emitting diode chips is large, the cost is high, the driving method and packaging process are complex, and the spectrum is not continuous enough. In the latter case, the light-emitting diode chip is electroluminescent, and the spectrum is relatively unstable. Summary of the Invention

[0004] This application provides a light-emitting structure and a lighting device, which can generate a full-spectrum lighting source, and the continuity of the spectrum is good, closer to natural light, and at the same time, the stability of the spectral energy distribution with respect to current change is good.

[0005] In a first aspect, this application provides a light-emitting structure, which generates a full-spectrum lighting source. The light-emitting structure includes at least one light-emitting diode chip, and the light-emitting diode chip includes an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. The first light-emitting layer is located on the side of the second light-emitting layer close to the P-type semiconductor layer;

[0006] The first light-emitting layer generates at least one band of light in an electroluminescent manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate at least one band of light, and each band of light includes at least one wavelength;

[0007] The bands corresponding to all the light generated by the light-emitting structure include the blue band, the cyan band, the green band, the yellow band, and the red band.

[0008] The light-emitting structure provided by this application includes at least one light-emitting diode chip. The light-emitting diode chip has two forms: electroluminescence and photoluminescence, which makes the spectrum of the light-emitting structure stable and not fluctuate with the change of current. The second light-emitting layer of photoluminescence is located between the N-type semiconductor layer and the P-type semiconductor layer. The second light-emitting layer can release stress in advance, so as to improve the external quantum efficiency of the first light-emitting layer. At the same time, the second light-emitting layer itself has good crystal quality and can be reflected and absorbed multiple times between the N-type semiconductor layer and the P-type semiconductor layer, and the external quantum efficiency of the second light-emitting layer can also be improved, so that the wavelengths generated by the first light-emitting layer and the second light-emitting layer can have higher external quantum efficiency compared with traditional LEDs.

[0009] The light-emitting diode chip includes at least one band and at least two different wavelengths. In this way, the band, the number of wavelengths, the peak wavelength and full width at half maximum of each wavelength, and the light intensity ratio of different wavelengths of the light-emitting diode chip can be selected according to the needs of different color temperatures and color rendering indexes, so as to improve the continuity of the spectrum, and it is easy to obtain a full-spectrum illumination spectrum, making the full-spectrum illumination light source emit light closest to natural light, which is similar to sunlight and has a color rendering index close to 100. In addition, the obtained full-spectrum illumination light source has a simple driving method, a simple packaging process, and a simple control method, which is convenient for controlling costs, improving reliability and service life.

[0010] The full-spectrum illumination light source realized by different packaging methods includes at least the light rays of the blue band, cyan band, green band, yellow band and red band, and the wavelengths of all the included light rays are sorted according to the peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm. And the light rays in the red band include at least one or more of short red light, medium red light and long red light. Short red light realizes high luminous efficiency, medium red light realizes medium color rendering index and high luminous efficiency, and long red light realizes high color rendering index, which can be flexibly selected according to different needs.

[0011] In a second aspect, this application provides an illumination device, which includes an illumination lamp body, the light-emitting structure as described above, and a mosquito repelling structure that generates mosquito repelling light rays; the light-emitting structure and the mosquito repelling structure are placed in the same illumination lamp body or in different illumination lamp bodies.

[0012] In the illumination device in the embodiments of this application, the light-emitting structure generates a full-spectrum illumination light source, and uses a light-emitting diode chip with two light-emitting modes of electroluminescence and photoluminescence and multiple wavelengths, so as to obtain a light source spectrum with good continuity, closer to natural light, and at the same time, the spectral energy distribution has good stability with the change of current. The mosquito repelling structure generates mosquito repelling light rays to increase the mosquito repelling function. In this way, it is possible to prevent mosquitoes from entering the working area to form interference and prevent mosquitoes from entering the lamp, which is convenient for cleaning and maintenance.

[0013] The structure of the present application, as well as its other inventive purposes and beneficial effects, will become more apparent and understandable through the description of the preferred embodiments in conjunction with the accompanying drawings. Description of the Drawings

[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can also be obtained based on these drawings.

[0015] Figure 1 The first schematic diagram of the light-emitting diode chip provided by the embodiment of the present application;

[0016] Figure 2 The second schematic diagram of the light-emitting diode chip provided by the embodiment of the present application;

[0017] Figure 3 A spectral diagram of the light-emitting diode chip provided by the embodiment of the present application;

[0018] Figure 4 The third schematic diagram of the light-emitting diode chip provided by the embodiment of the present application;

[0019] Figure 5 The fourth schematic diagram of the light-emitting diode chip provided by the embodiment of the present application;

[0020] Figure 6 The fifth schematic diagram of the light-emitting diode chip provided by the embodiment of the present application;

[0021] Figure 7 The first schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0022] Figure 8 The second schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0023] Figure 9 The third schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0024] Figure 10 The fourth schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0025] Figure 11 A spectral diagram of the light-emitting structure provided by the embodiment of the present application;

[0026] Figure 12 The fifth schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0027] Figure 13 The sixth schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0028] Figure 14 The seventh schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0029] Figure 15 The eighth schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0030] Figure 16 The ninth schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0031] Figure 17 The tenth schematic diagram of the light-emitting structure provided by the embodiment of the present application;

[0032] Figure 18 Another spectrogram of the light-emitting structure provided by the embodiment of the present application;

[0033] Figure 19 One schematic diagram of the first light-emitting layer and the second light-emitting layer provided by the embodiment of the present application;

[0034] Figure 20 Another schematic diagram of the first light-emitting layer and the second light-emitting layer provided by the embodiment of the present application;

[0035] Figure 21 Another schematic diagram of the first light-emitting layer and the second light-emitting layer provided by the embodiment of the present application;

[0036] Figure 22 Schematic diagram of the quantum well provided by the embodiment of the present application;

[0037] Figure 23 Schematic diagram of the multiple quantum well provided by the embodiment of the present application.

[0038] Explanation of reference numerals:

[0039] 101 - N-type semiconductor layer; 102 - Second light-emitting layer;

[0040] 103 - First light-emitting layer; 104 - P-type semiconductor layer;

[0041] 105 - Color conversion layer; 106 - First barrier layer;

[0042] 107 - Second barrier layer; 201 - First sublayer;

[0043] 202 - Second sublayer; 203 - Barrier layer;

[0044] 204 - Well layer. Detailed implementation manners

[0045] In the related art, there are mainly the following two encapsulation methods for the light-emitting structure: One is that multiple single-wavelength light-emitting diode chips and phosphors are encapsulated together. The number of light-emitting diode chips is large, the cost is high, the driving method is complex, the encapsulation process is complex, the control is uneven, and the spectrum is not continuous enough. The other is that a single multi-wavelength light-emitting diode chip and phosphors are encapsulated together. This light-emitting diode chip is electroluminescent, and as the current changes, the peak intensity will reverse, and the spectrum is relatively unstable, which may cause the blue light hazard to increase or even exceed the standard relatively.

[0046] The light-emitting structure provided by this application generates a full-spectrum illumination light source. The light-emitting structure includes at least one light-emitting diode chip. The light-emitting diode chip includes an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer disposed between the N-type semiconductor layer and the P-type semiconductor layer. The first light-emitting layer is located on the side of the second light-emitting layer close to the P-type semiconductor layer. The first light-emitting layer generates light of at least one band in an electroluminescent manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate light of at least one band.

[0047] There are two forms of electroluminescence and photoluminescence in the light-emitting diode chip, which makes the spectrum of the light-emitting structure stable and will not fluctuate with the change of current. The photoluminescent second light-emitting layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The second light-emitting layer can release stress in advance, so that the external quantum efficiency of the first light-emitting layer is improved. At the same time, the second light-emitting layer itself has good crystal quality and can be reflected and absorbed multiple times between the N-type semiconductor layer and the P-type semiconductor layer. The external quantum efficiency of the second light-emitting layer can also be improved, so that the wavelengths generated by the first light-emitting layer and the second light-emitting layer can have higher external quantum efficiencies compared with traditional LEDs.

[0048] The light-emitting diode chip includes at least one band and at least two different wavelengths. In this way, the band, the number of wavelengths, the peak wavelength and the full width at half maximum of each wavelength, and the light intensity ratio of different wavelengths of the light-emitting diode chip can be selected according to the needs of different color temperatures and color rendering indices, improving the continuity of the spectrum. By cooperating with a suitable encapsulation scheme to achieve a full spectrum, that is, the spectrum design of the full spectrum does not need to be restricted by traditional light-emitting diode chips, can be closer to the solar spectrum, and has lower blue light.

[0049] At the same time, a multi-wavelength light-emitting diode chip combining electroluminescence and photoluminescence is adopted, with a simple driving method, a simple encapsulation process, and a simple control method, which is convenient for cost control. At the same time, it is easy to obtain a full-spectrum illumination spectrum, so that the full-spectrum illumination light source can emit light closest to natural light, which is similar to sunlight, the color rendering index is close to 100, and the stability of the spectral energy distribution with the change of current is good. In addition, the size of the light-emitting diode chip and the light-emitting diode chip can be flexibly adjusted, reducing costs and improving reliability and service life.

[0050] The full-spectrum lighting source implemented by different encapsulation methods contains at least light rays in the blue band, cyan band, green band, yellow band, and red band. And the wavelengths of all the included light rays are sorted according to the peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm. Moreover, the red light band contains at least one or more of short red light, medium red light, and long red light. Short red light achieves high luminous efficiency, medium red light achieves medium color rendering and high luminous efficiency, and long red light achieves high color rendering, which can be flexibly selected according to different requirements.

[0051] Furthermore, the blue band generated by the light-emitting structure contains at least blue light of a first wavelength and blue light of a second wavelength. The ratio of the optical power of the blue light of the second wavelength to the blue light of the first wavelength emitted by the light-emitting structure is greater than or equal to 0.5. The peak wavelength range of the blue light of the first wavelength generated by the light-emitting structure is 440 ± 10 nm, and / or the peak wavelength range of the blue light of the second wavelength is 455 ± 10 nm.

[0052] Alternatively, the blue band generated by the light-emitting structure contains at least blue light of a first wavelength, blue light of a second wavelength, and blue light of a third wavelength. The ratio of the optical power of the blue light of the second wavelength to the blue light of the first wavelength emitted by the light-emitting structure is greater than or equal to 0.5, and / or the ratio of the optical power of the blue light of the third wavelength to the blue light of the first wavelength is greater than or equal to 0.25. The peak wavelength range of the blue light of the first wavelength generated by the light-emitting structure is 440 ± 10 nm, and / or the peak wavelength range of the blue light of the second wavelength is 455 ± 10 nm, and / or the peak wavelength range of the blue light of the third wavelength is 470 ± 10 nm.

[0053] The light rays in the blue band contained in the full-spectrum lighting source implemented by different encapsulation methods contain at least two different wavelengths, and the blue light of the second wavelength is emphasized, thereby achieving better spectral continuity, while further reducing the blue light hazard and further improving the luminous efficiency.

[0054] To make the objectives, technical solutions, and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described in more detail below with reference to the accompanying drawings in the preferred embodiments of the present application. In the drawings, the same or similar reference numerals represent the same or similar components or components with the same or similar functions throughout. The described embodiments are some, but not all, of the embodiments of the present application. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to explain the present application and should not be construed as limiting the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts fall within the scope of protection of the present application. The embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0055] An embodiment of the present application provides a light-emitting structure that generates a full-spectrum illumination light source. The full-spectrum illumination light source can emit light that is closest to natural light, which is similar to sunlight and has a color rendering index close to 100. The light-emitting structure can be applied to the lighting field, such as indoor and outdoor lighting. Indoor lighting includes table lamps, etc., and outdoor lighting includes street lamps, etc.

[0056] Referring to Figure 1 , the light-emitting structure includes at least one light-emitting diode chip MC. The light-emitting diode chip MC includes an N-type semiconductor layer 101, a P-type semiconductor layer 104, a first light-emitting layer 103 and a second light-emitting layer 102 disposed between the N-type semiconductor layer 101 and the P-type semiconductor layer 104. The first light-emitting layer 103 is located on the side of the second light-emitting layer 102 closer to the P-type semiconductor layer 104; the first light-emitting layer 103 generates light of at least one wavelength in an electroluminescent manner, and the light generated by the first light-emitting layer 103 excites the second light-emitting layer 102 to generate light of at least one wavelength. Each wavelength band of light includes at least one wavelength; the wavelength bands corresponding to all the light generated by the light-emitting structure include a blue wavelength band, a cyan wavelength band, a green wavelength band, a yellow wavelength band, and a red wavelength band.

[0057] Specifically, the light-emitting structure includes one or more light-emitting diode chips MC, and the light-emitting diode chip MC is a multi-wavelength chip. The light-emitting diode chip MC has at least two wavelengths, and these wavelengths can be located in different wavelength bands, or partially located in the same wavelength band, or all located in the same wavelength band. The shape of the light-emitting diode chip MC can be rectangular, square, circular, oval, triangular, rhombic, parallelogram, or other polygons, etc.

[0058] As Figure 1 shown, the light-emitting diode chip MC correspondingly includes an N-type semiconductor layer 101, a P-type semiconductor layer 104, a first light-emitting layer 103 and a second light-emitting layer 102. The first light-emitting layer 103 and the second light-emitting layer 102 are stacked, and the first light-emitting layer 103 is located on the side of the second light-emitting layer 102 closer to the P-type semiconductor layer 104, that is, the first light-emitting layer 103 is closer to the P-type semiconductor layer 104, and the second light-emitting layer 102 is closer to the N-type semiconductor layer 101.

[0059] Among them, the holes output by the P-type semiconductor layer 104 and the electrons output by the N-type semiconductor layer 101 recombine within the first light-emitting layer 103, causing the first light-emitting layer 103 to generate light of at least one wavelength band in the form of electroluminescence (EL). The holes output by the P-type semiconductor layer 104 cannot reach the second light-emitting layer 102, and the second light-emitting layer 102 cannot emit light through electroluminescence. The light of the first wavelength band generated by the first light-emitting layer 103 is transmitted into the second light-emitting layer 102, exciting the second light-emitting layer 102 to generate light of at least one wavelength band in the form of photoluminescence (PL).

[0060] It can be understood that when the first light-emitting layer 103 generates light of one wavelength, there is only one light-emitting mechanism, electroluminescence, in the first light-emitting layer 103. When the first light-emitting layer 103 generates light of at least two wavelengths, the minimum wavelength will excite the material with a larger wavelength to emit light through photoluminescence, making there be two light-emitting mechanisms, electroluminescence and photoluminescence, in the first light-emitting layer 103. The holes in the P-type semiconductor layer 104 are difficult to be transmitted to the second light-emitting layer 102, and there is only one light-emitting mechanism, photoluminescence, in the second light-emitting layer 102.

[0061] In this way, the light-emitting diode chip MC has two forms of electroluminescence and photoluminescence, making the stability of the spectral energy distribution of the light-emitting structure with respect to current change good. The second light-emitting layer 102 that emits light through photoluminescence is located between the N-type semiconductor layer 101 and the P-type semiconductor layer 104. The second light-emitting layer 102 can release stress in advance, improving the external quantum efficiency of the first light-emitting layer 103. At the same time, the second light-emitting layer 102 has good crystal quality itself and can be reflected and absorbed multiple times between the N-type semiconductor layer 101 and the P-type semiconductor layer 104, and the external quantum efficiency of the second light-emitting layer 102 can also be improved, making the wavelengths generated by the first light-emitting layer 103 and the second light-emitting layer 102 have higher external quantum efficiencies compared to traditional LEDs.

[0062] Among them, the light in each band can include multiple wavelengths, the number of included wavelengths is greater than or equal to 1 and less than or equal to 10, the number of wavelengths in the light of different bands can be equal or unequal, and the bands generated by the first light-emitting layer 103 and the second light-emitting layer 102 can be the same or different. Exemplarily, the first light-emitting layer 103 generates light of one band, which is a purple band. The purple band corresponding to the first light-emitting layer 103 includes one wavelength. The second light-emitting layer 102 generates light of two bands, namely a purple band and a blue band. The purple band corresponding to the second light-emitting layer 102 includes two wavelengths, and both of these two wavelengths are less than the wavelength of the purple band corresponding to the first light-emitting layer 103. The blue band corresponding to the second light-emitting layer 102 includes two wavelengths. The light of the purple band generated by the light-emitting diode chip MC has three wavelengths, and the light of the blue band has two wavelengths. The light-emitting diode chip MC is in the form of A3B2.

[0063] In this way, the band, the number of wavelengths, the peak wavelength and the full width at half maximum of each wavelength, and the light intensity ratio of different wavelengths of the light-emitting diode chip MC can be selected according to the needs of different color temperatures and color rendering indexes, and a suitable packaging scheme can be combined to achieve a full spectrum. That is, the spectrum design of the full spectrum does not need to be restricted by the traditional light-emitting diode chip MC, can be closer to natural light, and has lower blue light. The realized spectrum is more continuous, the color temperature can cover 1500 - 7000K, the color rendering index is greater than 80, further greater than 90, and even further greater than 95. At the same time, a multi-wavelength light-emitting diode chip MC that combines electroluminescence and photoluminescence is adopted, and the driving method, packaging process, and control method are simple, which is convenient for controlling costs and easily obtaining a full-spectrum illumination spectrum. In addition, the size of the light-emitting diode chip MC and the light-emitting diode chip MC can be flexibly adjusted to reduce costs, improve reliability and service life.

[0064] In some possible embodiments, the light-emitting structure generates light of a blue band, and the generated light of the blue band includes at least two different wavelengths of blue light to improve the spectral continuity. In some possible examples, the light of the blue band generated by the light-emitting structure includes at least the first wavelength of blue light and the second wavelength of blue light. The peak wavelength range of the first wavelength of blue light generated by the light-emitting structure is 440 ± 10 nm, and / or the peak wavelength range of the second wavelength of blue light is 455 ± 10 nm. The ratio of the optical power of the second wavelength of blue light to the first wavelength of blue light emitted by the light-emitting structure is greater than or equal to 0.5. In this way, the second wavelength of blue light is highlighted, thereby achieving better spectral continuity, further reducing the blue light hazard, and further improving the light efficiency.

[0065] In some other possible examples, the light in the blue wavelength band generated by the light-emitting structure includes at least blue light of a first wavelength, blue light of a second wavelength, and blue light of a third wavelength. The main wavelength range of the blue light of the first wavelength generated by the light-emitting structure is 440±10 nm, and / or the main wavelength range of the blue light of the second wavelength is 455±10 nm, and / or the main wavelength range of the blue light of the third wavelength is 470±10 nm. The ratio of the optical power of the blue light of the second wavelength to the blue light of the first wavelength generated by the light-emitting structure is greater than or equal to 0.5, and / or the ratio of the optical power of the blue light of the third wavelength to the blue light of the first wavelength is greater than or equal to 0.25. In this way, the blue light of the second wavelength is highlighted, thereby achieving better spectral continuity, while further reducing the blue light hazard and further improving the light efficiency.

[0066] The light generated by the first light-emitting layer 103 includes one of a purple wavelength band, a blue wavelength band, a cyan wavelength band, or a green wavelength band. The light of the second wavelength band includes one of a purple wavelength band, a blue wavelength band, a cyan wavelength band, a green wavelength band, a yellow wavelength band, a red wavelength band, or an infrared wavelength band. And at least one wavelength of the light generated by the first light-emitting layer 103 is less than each wavelength of the light generated by the second light-emitting layer 102. In this way, the light generated by the first light-emitting layer 103 can excite the second light-emitting layer 102 to emit light.

[0067] Among them, the wavelength range of the purple wavelength band is 400 nm - 420 nm, the wavelength range of the blue wavelength band is 420 nm - 480 nm, the wavelength range of the cyan wavelength band is 480 nm - 510 nm, the wavelength range of the green wavelength band is 510 nm - 565 nm, the wavelength range of the yellow wavelength band is 565 nm - 590 nm, the wavelength range of the red wavelength band is 590 nm - 740 nm, and the wavelength range of the infrared wavelength band is 740 nm - 1.7 μm.

[0068] It can be understood that the light in the purple wavelength band is purple light, and its color is purple; the light in the blue wavelength band is blue light, and its color is blue; the light in the cyan wavelength band is cyan light, and its color is cyan; the light in the green wavelength band is green light, and its color is green; the light in the yellow wavelength band is yellow light, and its color is yellow; the light in the red wavelength band is red light, and its color is red; the light in the infrared wavelength band is infrared light, and its color is colorless.

[0069] In this way, the light-emitting diode chip MC can contain a total of n colors, where 1≤n≤7. Among them, the electroluminescence mechanism includes a colors, and the photoluminescence mechanism includes b colors, where 1≤a≤4 and 2≤b≤7. Here, the color corresponds to the wavelength band. For example, blue corresponds to the blue wavelength band, and its wavelength range is 420 - 470 nm. For the convenience of description and representation, in the following examples, the purple wavelength band is represented by A, the blue wavelength band is represented by B, the cyan wavelength band is represented by C, the green wavelength band is represented by G, the yellow wavelength band is represented by Y, the red wavelength band is represented by R, and the infrared wavelength band is represented by IR.

[0070] In some possible implementations, the wavelength bands corresponding to the light generated by at least one light-emitting diode chip MC in the light-emitting structure include a purple wavelength band and / or a blue wavelength band. Exemplarily, as Figure 1 and Figure 2 shown, a single light-emitting diode chip MC is in the form of BxBy, abbreviated as Bx+y form, where x and y are the number of wavelengths of the corresponding wavelength bands, and the values are both greater than or equal to 1. Among them, Bx is the wavelength emitted by the first light-emitting layer, and By is the wavelength emitted by the second light-emitting layer. For example, as Figure 1 shown, a single light-emitting diode chip MC is in the form of B2B1, or, as Figure 2 shown, a single light-emitting diode chip MC is in the form of B1B2. A single light-emitting diode chip MC is in the form of B3, and its spectrum is as Figure 3 shown.

[0071] In some other possible implementations, the wavelength bands corresponding to the light generated by at least one light-emitting diode chip MC in the light-emitting structure further include a cyan wavelength band. Exemplarily, as Figure 4 shown, a single light-emitting diode chip MC is in the form of BxC. Of course, a single light-emitting diode chip MC may further include light of other wavelength bands. For example, as Figure 5 shown, a single light-emitting diode chip MC is in the form of BxCG.

[0072] In some possible embodiments, the blue wavelength band corresponding to the full-spectrum illumination light source includes at least two wavelengths. All the wavelengths included in the light of the blue wavelength band are sorted according to the peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm; and / or, the purple wavelength band corresponding to the full-spectrum illumination light source includes at least two wavelengths. All the wavelengths included in the light of the purple wavelength band are sorted according to the peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm.

[0073] In this way, the multiple wavelengths corresponding to the light of the blue wavelength band generated by the light-emitting structure are continuous, that is, the blue light in the full-spectrum illumination light source has good continuity; or, the multiple wavelengths corresponding to the light of the purple wavelength band generated by the light-emitting structure are continuous, that is, the purple light in the full-spectrum illumination light source has good continuity; or, the multiple wavelengths corresponding to the light of the blue wavelength band generated by the light-emitting structure are continuous, and the multiple wavelengths corresponding to the light of the purple wavelength band generated by the light-emitting structure are continuous, and the spectrum of the full-spectrum illumination light source has good continuity.

[0074] Furthermore, the difference between the maximum peak wavelength in the light of the purple wavelength band and the minimum peak wavelength in the light of the blue wavelength band is greater than or equal to 5 nm. In this way, there is continuity between the light of the purple wavelength band and the light of the blue wavelength band generated by the light-emitting structure.

[0075] In some other possible embodiments, the cyan band in the full-spectrum illumination light source includes at least two wavelengths. All the wavelengths included in the light of the cyan band are sorted according to the peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm.

[0076] In this way, the multiple wavelengths corresponding to the light of the cyan band generated by the light-emitting structure are continuous, that is, the cyan light in the full-spectrum illumination light source has good continuity, which can ensure filling the cyan light defect. The light of the cyan band and the light of the blue band are continuous, further improving the spectral continuity of the full-spectrum illumination light source.

[0077] In other possible embodiments, all the wavelengths of the light generated by the light-emitting structure are sorted according to the peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm. The full-width at half-maximum range of all the wavelengths generated by the light-emitting structure is 10 nm - 70 nm. In this way, the spectral continuity of the full-spectrum illumination light source formed by the light-emitting structure is good.

[0078] In some possible implementation manners, the bands corresponding to the light generated by the light-emitting structure include a blue band, a cyan band, a green band, a yellow band, and a red band. In this way, the full-spectrum illumination light source formed includes blue light, cyan light, green light, yellow light, and red light. Among them, the peak wavelength of the red band includes at least one of a short-wave band, a medium-wave band, and a long-wave short-wave band. In this way, the light of the red band includes at least one of short-wave red light, medium-wave red light, and long-wave red light. The short-wave red light has high luminous efficiency, the medium-wave red light has high luminous efficiency and high color rendering index, and the long-wave red light has high color rendering index. The wavelength range of the short-wave red light is 590 nm - 620 nm, the wavelength range of the medium-wave red light is 620 nm - 640 nm, and the wavelength range of the long-wave red light is 640 nm - 740 nm.

[0079] Furthermore, the bands corresponding to the light generated by the light-emitting structure further include a purple band and / or an infrared band. In this way, the light source formed further includes at least one of purple light and infrared light, forming a full spectrum. Further, each of the purple band, the blue band, the cyan band, the green band, the yellow band, the red band, and the infrared band has at least two wavelengths. All the wavelengths are sorted according to the peak wavelength size, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm, and the spectral continuity of the full-spectrum illumination light source formed is good.

[0080] The light-emitting structures in the embodiments of the present application have multiple packaging methods. Each packaging method can form a full-spectrum illumination light source, that is, the light generated by at least one light-emitting diode chip MC forms a full-spectrum illumination light source. Exemplarily, the light generated by a single / multiple light-emitting diode chips MC forms a full-spectrum illumination light source; or, the light generated by a single / multiple light-emitting diode chips MC is superimposed on the light generated by a single / multiple single-wavelength chips SC to form a full-spectrum illumination light source; or, the light generated by a single / multiple light-emitting diode chips MC is superimposed on the light generated by a color conversion layer to form a full-spectrum illumination light source; or, the light generated by a single / multiple light-emitting diode chips MC is superimposed on a single / multiple single-wavelength chips SC and a color conversion layer to form a full-spectrum illumination light source.

[0081] Moreover, for all the light rays generated by the light-emitting structure, when sorted by the peak wavelength size, the difference between two adjacent peak wavelengths is greater than or equal to 5 nm. And, the wavelength bands corresponding to all the light rays generated by the light-emitting structure include a blue band, a cyan band, a green band, a yellow band, and a red band. The light rays in the red band include at least one of short-wave red light, medium-wave red light, and long-wave red light. The red band can be generated by the light-emitting diode chip MC, or can also be generated by the single-wavelength chip SC or converted by the color conversion layer. In this way, the light-emitting structure has multiple structures and packaging methods, which is convenient for forming a full-spectrum illumination light source, and the spectral continuity of the full-spectrum illumination light source is good.

[0082] In the first possible embodiment, the light-emitting structure includes a single light-emitting diode chip MC, and the light generated by the light-emitting diode chip MC forms a full-spectrum illumination light source. In this way, a single light-emitting diode chip MC is packaged alone, and a full-spectrum illumination light source can be directly obtained on a single light-emitting diode chip MC. Only using a single light-emitting diode chip MC, the driving circuit is simple and the control method is simple.

[0083] A single light-emitting diode chip MC contains multiple wavelengths. During packaging, there is no need to add powder, and the packaging is simple. The cost of a single light-emitting diode chip MC is lower than the total cost of multiple light-emitting diode chips MC, and is also lower than the total cost of a traditional single-wavelength chip SC plus multiple phosphors, with a relatively low cost.

[0084] In some possible examples, as Figure 6 shown, the light-emitting diode chip MC is in the form of BxCyGzYmRn, where z, m, and n are the number of wavelengths in the corresponding bands, and the values are all greater than or equal to 1. In other possible examples, the light-emitting diode chip MC can also be in the form of AxByCzGmYnRk, AxByCzGmYnRkIRt, etc., where t is the number of wavelengths in the corresponding band, and the value is greater than or equal to 1.

[0085] In a second possible embodiment, the light-emitting structure includes at least two light-emitting diode chips MC, and the light generated by the at least two light-emitting diode chips MC is mixed to form a full-spectrum illumination light source. In this way, two or more light-emitting diode chips MC are packaged together to obtain a full-spectrum illumination light source.

[0086] In some possible examples, such as Figure 7 shown, the light-emitting structure includes two light-emitting diode chips MC. The light-emitting diode chip MC1 is in the form of BxCy, and the light-emitting diode chip MC2 is in the form of GxYyRz. In other possible examples, such as Figure 8 shown, the light-emitting structure includes three light-emitting diode chips MC. The light-emitting diode chip MC1 is in the form of BxCy, the light-emitting diode chip MC2 is in the form of CxGy, and the light-emitting diode chip MC3 is in the form of AxYyRz.

[0087] In a third possible embodiment, referring to Figure 9 , the light-emitting structure further includes a color conversion layer 105, and the color conversion layer 105 is disposed on the light-emitting side of the light-emitting diode chip MC. The color conversion layer 105 can convert the color of the light generated by the light-emitting diode chip MC, for example, convert it into red light, yellow light, green light, etc. Among them, the color conversion layer 105 can be added to the encapsulation glue and set on the light-emitting surface of the light-emitting diode chip MC during encapsulation, or a film can be formed and attached to the light-emitting surface of the light-emitting diode chip MC after encapsulation.

[0088] The color conversion layer 105 includes at least one color conversion material, and the wavelengths of the light converted by each color conversion material are different, that is, each color conversion material generates a single wavelength. The color conversion material 114 can be a quantum dot material or a fluorescent material, and the wavelength bands corresponding to the light converted by the color conversion material 114 include a blue band, a green band, a cyan band, a yellow band, a red band, or an infrared band. For example, the color conversion material 114 includes potassium fluosilicate (KSF) phosphor (i.e., red phosphor), aluminate red phosphor, aluminate green phosphor, europium-doped blue phosphor, yellow phosphor, etc.

[0089] In some possible embodiments, the wavelengths of the light converted by at least part of the color conversion materials are in the same band. Exemplarily, the color conversion layer 105 includes two color conversion materials, and both of these two color conversion materials generate red light and have different wavelengths. For example, one of the color conversion materials generates red light with a short wavelength of 600 nm for achieving high luminous efficiency, and the other color conversion material generates red light with a long wavelength of 660 nm for achieving high color rendering index.

[0090] Among them, the wavelength of the light converted by the color conversion material can be equal to the wavelength of the light generated by the light-emitting diode chip MC, so as to increase the brightness of that wavelength. For example, the light-emitting diode chip MC generates light with wavelengths of 530 nm and 580 nm, which are green light respectively. The light converted by the color conversion material can also be 530 nm, which is green light, to increase the brightness of the green light. Or, the light converted by the color conversion material can also be 560 nm, which is green light, to increase the continuity of the wavelength of the green light, thereby increasing the continuity of the spectrum.

[0091] The light generated by the light-emitting diode chip MC is mixed with the light converted by the color conversion layer 105 to form a full-spectrum illumination light source. In this way, only one or a small number of color conversion materials (such as phosphors) need to be added to form a full-spectrum illumination light source, and the formulation and packaging are simple. Among them, the color conversion layer 105 can be provided on one light-emitting diode chip MC, or can be provided on multiple light-emitting diode chips MC, and the wavelength bands of the light generated by the color conversion layer 105 on different light-emitting diode chips MC can be the same or different.

[0092] In some possible examples, the light generated by one light-emitting diode chip MC and the light converted by the color conversion layer 105 include light in the blue wavelength band, cyan wavelength band, green wavelength band, yellow wavelength band, and red wavelength band to form a full-spectrum illumination light source. For example, refer to Figure 10 , the light-emitting diode chip MC is in the form of BxCy, and the color conversion layer 105 is in the form of G+Y+R. Another example is that the light-emitting diode chip MC is in the form of BxCyGz, and the color conversion layer 105 is in the form of Y+R, G+Y+R. Another example is that the light-emitting diode chip MC is in the form of BxCyGzYm, and the color conversion layer 105 is in the form of R, G+R, Y+R, G+Y+R. More specifically, the light-emitting diode chip MC is B2C1G2, and the color conversion layer 105 is in the form of Y+R, and the spectrum of the formed light source is as Figure 11 shown.

[0093] In the above examples, the light generated by one light-emitting diode chip MC and the light converted by the color conversion layer 105 can also include light in the purple wavelength band and / or infrared wavelength band. For example, the light-emitting diode chip MC is in the form of BxCy, and the color conversion layer 105 is in the form of G+Y+R+IR. Another example is that the light-emitting diode chip MC is in the form of AxByCzGmYn, and the color conversion layer 105 is in the form of G+R+IR.

[0094] Further, in an example where the light-emitting structure includes a light-emitting diode chip MC, and the light generated by the light-emitting diode chip MC forms a full-spectrum illumination light source, the light-emitting structure may further include a color conversion layer 105 to increase the continuity and both ends of the spectrum. For example, the light-emitting diode chip MC is in the form of AxByCzGmYnRk, and the color conversion layer 105 is in the form of G+Y+R+IR.

[0095] In a fourth possible embodiment, the light-emitting structure further includes at least one single-wavelength chip SC that generates light of a single wavelength. For example, the single-wavelength chip SC generates yellow light, green light, blue light, red light, etc. The light generated by at least one light-emitting diode chip MC and the light generated by at least one single-wavelength chip SC are mixed to form a full-spectrum illumination light source. In this way, at least one light-emitting diode chip MC and at least one single-wavelength chip SC are encapsulated together to obtain a full-spectrum illumination light source.

[0096] In some possible examples, the optical device includes a light-emitting diode chip MC and a single-wavelength chip SC. Refer to Figure 12 , the light-emitting diode chip MC is in the form of BxCyGzY, and the single-wavelength chip SC is in the form of R. In other possible examples, the light-emitting structure includes two light-emitting diode chips MC and a single-wavelength chip SC. Refer to Figure 13 , the light-emitting diode chip MC1 is in the form of BxCy, the light-emitting diode chip MC2 is in the form of GxYy, and the single-wavelength chip SC is in the form of R.

[0097] In still other possible examples, the light-emitting structure includes a light-emitting diode chip MC and two single-wavelength chips SC. Refer to Figure 14 , the light-emitting diode chip MC is in the form of AxByCzGm, the single-wavelength chip SC1 is in the form of R, and the single-wavelength chip SC2 is in the form of Y. In other possible examples, the light-emitting structure includes two light-emitting diode chips MC and two single-wavelength chips SC. Refer to Figure 15 , the light-emitting diode chip MC1 is in the form of AxBy, the light-emitting diode chip MC2 is in the form of CxYy, the single-wavelength chip SC1 is in the form of G, and the single-wavelength chip SC2 is in the form of R.

[0098] In a fifth possible embodiment, the light-emitting structure further includes at least one single-wavelength chip SC and at least one color conversion layer 105, and the color conversion layer 105 is disposed on the light-emitting side of the single-wavelength chip SC and / or the light-emitting diode chip MC. Among them, the color conversion layer 105 may be disposed on the light-emitting side of at least one of the single-wavelength chip SC and the light-emitting diode chip MC, and the wavelengths after conversion by the color conversion layer 105 at different positions may be the same or different.

[0099] Among them, the light generated by at least one light-emitting diode chip MC, the light generated by at least one single-wavelength chip SC, and the light converted by the color conversion layer 105 are mixed to form a full-spectrum illumination light source. At least one light-emitting diode chip MC and at least one single-wavelength chip SC are encapsulated together. The color conversion layer 105 can be added to the encapsulation glue and set on the light-emitting surface of the light-emitting diode chip MC and / or the single-wavelength chip SC during encapsulation, or a film can be formed and attached to the light-emitting surface after the light-emitting diode chip MC and the single-wavelength chip SC are encapsulated.

[0100] In some possible implementation manners, the light generated by one light-emitting diode chip MC, the light generated by one single-wavelength chip SC, and the light converted by the color conversion layer 105 are mixed to form a full-spectrum illumination light source, and the color conversion layer 105 generates light of one wavelength. For example, refer to Figure 16 , the light-emitting diode chip MC is in the form of BxCyGz, the single-wavelength chip SC is in the form of Y, and the color conversion layer 105 is in the form of R.

[0101] In other possible implementation manners, the light generated by one light-emitting diode chip MC, the light generated by two single-wavelength chips SC, and the light converted by the color conversion layer 105 are mixed to form a full-spectrum illumination light source, and the color conversion layer 105 generates light of two wavelengths. For example, refer to Figure 17 , the light-emitting diode chip MC is in the form of BxBy, the single-wavelength chip SC1 is in the form of C, the single-wavelength chip SC2 is in the form of G, and the color conversion layer 105 is in the form of Y+R. More specifically, the light-emitting diode chip MC is in the form of B3, the single-wavelength chip SC1 is in the form of C, the single-wavelength chip SC2 is in the form of G, and the color conversion layer 105 is in the form of Y+R, and its spectrum is as Figure 18 shown.

[0102] In the embodiments of the present application, refer to Figure 1 、 Figures 19 to 21 , the first light-emitting layer 103 in the light-emitting diode chip MC includes at least one first sublayer 201, the second light-emitting layer 102 includes at least two second sublayers 202, at least one first sublayer 201 and at least two second sublayers 202 are stacked in sequence, and each first sublayer 201 and each second sublayer 202 generate light of one wavelength respectively.

[0103] The number of the first sublayers 201 is consistent with the number of wavelengths included in the light generated by the first light-emitting layer 103, and each first sublayer 201 emits light of one wavelength. The number of the second sublayers 202 is consistent with the number of wavelengths included in the light generated by the second light-emitting layer 102, and each second sublayer 202 emits light of one wavelength. Among them, the first sublayer 201 and the second sublayer 202 are formed by an epitaxial process, and both the first sublayer 201 and the second sublayer 202 can be a quantum well (QW) or a multi-quantum well (MQW). AsFigure 22 As shown, the quantum well includes a barrier layer 203 and a well layer 204, as Figure 23 shown, the multiple quantum well includes multiple cross-stacked barrier layers 203 and multiple well layers 204.

[0104] In some possible examples, in the light-emitting diode chip MC, except for a first layer 201 close to the second layer 202, the sum of the thicknesses of the remaining first layers 201 is less than the hole diffusion length, and the sum of the thicknesses of each first layer 201 is greater than the hole diffusion length. As Figure 19 shown, the thickness T2 is less than the hole diffusion length, and the thickness T1 is greater than the hole diffusion length. In this way, the holes generated by the P-type semiconductor layer 104 can reach each first layer 201, enabling each first layer 201 to emit light by electroluminescence. The holes generated by the P-type semiconductor layer 104 cannot reach each second layer 202, and each second layer 202 cannot emit light by electroluminescence.

[0105] In some other possible examples, a first barrier layer 106 is provided between adjacent first layer 201 and second layer 202. Except for a first layer 201 close to the second layer 202, the sum of the thicknesses of the remaining first layers 201 is less than the hole diffusion length, and the sum of the thicknesses of each first layer 201 and the first barrier layer 106 is greater than the hole diffusion length. As Figure 20 shown, the thickness T2 is less than the hole diffusion length, and the thickness T1 is greater than the hole diffusion length. In this way, the holes generated by the P-type semiconductor layer 104 can reach each first layer 201, enabling each first layer 201 to emit light by electroluminescence. The holes generated by the P-type semiconductor layer 104 cannot pass through the first barrier layer 106, that is, the holes generated by the P-type semiconductor layer 104 cannot reach each second layer 202, and each second layer 202 cannot emit light by electroluminescence. The material of the first barrier layer 106 can be gallium nitride doped with silicon.

[0106] In some other possible examples, a second barrier layer 107 is provided between two adjacent second layers 202 to block the holes and ensure that the holes do not reach the second layer 202 far from the P-type semiconductor. The material of the first barrier layer 106 can be gallium nitride doped with silicon. As a preferred implementation, refer to Figure 21 , a second barrier layer 107 is provided between every two adjacent second layers 202, and a first barrier layer 106 is provided between the adjacent first layer 201 and second layer 202. In this way, the blocking effect on the holes is better, the second layer 202 does not emit light by electroluminescence, and the stability of the spectral energy distribution with respect to the current change is good.

[0107] The embodiment of the present application further provides a lighting device, which includes a lighting lamp body, a mosquito repellent structure, and a light emitting structure. The light emitting structure generates a lighting light source, and the mosquito repellent structure generates mosquito repellent light rays to enhance the mosquito repellent function. In this way, it clears the interference of mosquitoes for users and prevents mosquitoes from entering the lighting device, thereby prolonging the service life of the lighting device. Among them, the wavelength range of the mosquito repellent light rays is 560nm - 600nm, and different wavelength bands can be selected according to different mosquitoes. The light emitting structure can be encapsulated to form a lighting lamp bead, and the mosquito repellent structure can be encapsulated to form a mosquito repellent lamp bead (i.e., a yellow lamp bead).

[0108] The lighting lamp beads and the mosquito repellent lamp beads can be arranged in a discrete or integrated manner, that is, the light emitting structure and the mosquito repellent structure are electrically connected to the same lighting lamp body or to different lighting lamp bodies. In the above two arrangement methods, the lighting lamp beads and the mosquito repellent lamp beads can be enabled simultaneously or can be enabled separately according to requirements. For example, only the mosquito repellent lamp beads are turned on for mosquito repellent.

[0109] Specifically, the lighting lamp beads and the mosquito repellent lamp beads are arranged in different lighting lamp bodies of the lamp body, and the placement positions of different lighting lamp bodies are not restricted. Exemplarily, the lighting lamp beads are placed in the lower lighting lamp body of a table lamp, and the mosquito repellent lamp beads are placed in the upper lighting lamp body of the table lamp. Another example is that the lighting lamp beads are placed in the lower lighting lamp body of a table lamp, and the mosquito repellent lamp beads are placed in the lighting lamp body on the lamp arm of the table lamp.

[0110] Or, the lighting lamp beads and the mosquito repellent lamp beads are arranged in the same lighting lamp body. Exemplarily, both the lighting lamp beads and the mosquito repellent lamp beads are placed on the lower lighting lamp body of a large street lamp. Another example is that both the lighting lamp beads and the mosquito repellent lamp beads are placed on the upper lighting lamp body of a large street lamp and also on the lower lighting lamp body of the large street lamp, that is, both the upper lighting lamp body and the lower lighting lamp body of the large street lamp are provided with lighting lamp beads and mosquito repellent lamp beads.

[0111] The lighting device in the embodiment of the present application uses the light emitting structure to generate a full-spectrum lighting light source, and adopts a light emitting diode chip with two light emitting modes of electroluminescence and photoluminescence and multiple wavelengths, so that the continuity of the obtained light source spectrum is good, closer to natural light, and at the same time, the spectral energy distribution has good stability with the change of current. The mosquito repellent structure generates mosquito repellent light rays to enhance the mosquito repellent function. In this way, it avoids mosquitoes from entering the working area to form interference and prevents mosquitoes from entering the lamp, which is convenient for cleaning and maintenance

[0112] In the description of the embodiments of the present application, it should be understood that, unless otherwise clearly specified and limited, the terms "install", "connect", and "couple" should be understood in a broad sense. For example, it may be a fixed connection, or an indirect connection through an intermediate medium, or the internal connection of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances. The orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present application. In the description of the present application, "a plurality of" means two or more, unless otherwise specifically and precisely defined.

[0113] The terms "first", "second", "third", "fourth", etc. (if any) in the specification, claims and drawings of the present application are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "comprise" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or are inherent to these processes, methods, products or devices.

[0114] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A light emitting structure, characterized in that: The light emitting structure generates a full-spectrum illumination light source, and the light emitting structure includes at least one light emitting diode chip, and the light emitting diode chip includes an N-type semiconductor layer, a P-type semiconductor layer, and a first light emitting layer and a second light emitting layer disposed between the N-type semiconductor layer and the P-type semiconductor layer, wherein the first light emitting layer is located on a side of the second light emitting layer close to the P-type semiconductor layer; The first light-emitting layer generates light of at least one wavelength band in an electroluminescent manner, and the light generated by the first light-emitting layer excites the second light-emitting layer to generate light of at least one wavelength band, and each of the light bands includes at least one wavelength; The wavelength bands corresponding to all the light rays generated by the light emitting structure include a blue wavelength band, a cyan wavelength band, a green wavelength band, a yellow wavelength band and a red wavelength band.

2. The light emitting structure according to claim 1, characterized in that: The wavelengths of all the light generated by the light emitting structure are sorted by peak wavelength, and the difference between two adjacent peak wavelengths is greater than or equal to 5 nm.

3. The light emitting structure according to claim 1, characterized in that: The half-peak width of all wavelengths generated by the light-emitting structure is in the range of 10nm-70nm.

4. The light emitting structure according to claim 1, characterized in that: The light in the blue band generated by the light emitting structure contains at least two blue lights with different wavelengths.

5. The light emitting structure according to claim 4, characterized in that: The light in the blue wavelength band generated by the light emitting structure at least includes blue light of a first wavelength and blue light of a second wavelength.

6. The light emitting structure according to claim 5, characterized in that: The ratio of the optical power of the second wavelength blue light emitted by the light emitting structure to the optical power of the first wavelength blue light is greater than or equal to 0.

5.

7. The light emitting structure according to claim 5, characterized in that: The peak wavelength range of the first wavelength blue light generated by the light emitting structure is 440±10 nm, and / or the peak wavelength range of the second wavelength blue light is 455±10 nm.

8. The light emitting structure according to claim 4, characterized in that: The light in the blue wavelength band generated by the light emitting structure at least includes a first wavelength blue light, a second wavelength blue light, and a third wavelength blue light.

9. The light emitting structure according to claim 8, characterized in that: The ratio of the optical power of the second wavelength blue light to the first wavelength blue light generated by the light emitting structure is greater than or equal to 0.5, and / or the ratio of the optical power of the third wavelength blue light to the first wavelength blue light is greater than or equal to 0.

25.

10. The light emitting structure according to claim 8, characterized in that: The main wavelength range of the first wavelength blue light generated by the light emitting structure is 440±10 nm, and / or the main wavelength range of the second wavelength blue light is 455±10 nm, and / or the main wavelength range of the third wavelength blue light is 470±10 nm.

11. The light emitting structure according to claim 1, characterized in that: The light in the red wavelength band includes at least one of short-wave red light, medium-wave red light and long-wave red light.

12. The light emitting structure according to claim 11, characterized in that: The peak wavelength range of the short-wave red light is 590nm-620nm, the peak wavelength range of the medium-wave red light is 620nm-640nm, and the peak wavelength range of the long-wave red light is 640nm-740nm.

13. The light emitting structure according to claim 1, characterized in that: The wavelength bands corresponding to all the light rays generated by the light emitting structure also include a violet wavelength band and / or an infrared wavelength band.

14. The light emitting structure according to claim 1, characterized in that: The corresponding wavelength band of the light generated by the first light-emitting layer of the light-emitting diode chip includes at least one of the purple wavelength band, the blue wavelength band, the cyan wavelength band and the green wavelength band, and the corresponding wavelength band generated by the second light-emitting layer includes at least one of the purple wavelength band, the blue wavelength band, the cyan wavelength band, the green wavelength band, the yellow wavelength band, the red wavelength band and the infrared wavelength band; At least one of the wavelengths of the light generated by the first light-emitting layer is smaller than all of the wavelengths of the light generated by the second light-emitting layer.

15. The light emitting structure according to any one of claims 1 to 14, characterized in that: The light emitting structure includes a light emitting diode chip, and the light generated by the first light emitting layer and the second light emitting layer of the light emitting diode chip are mixed to form the full-spectrum lighting light source.

16. The light emitting structure according to any one of claims 1 to 14, characterized in that: The light emitting structure further comprises a color conversion layer, and the color conversion layer is arranged on the light emitting side of the light emitting diode chip; The light generated by the light emitting diode chip is mixed with the light converted by the color conversion layer to form the full-spectrum lighting source.

17. The light emitting structure according to claim 16, characterized in that: The color conversion layer includes at least one color conversion material, and the wavelengths of the light converted by each color conversion material are different.

18. The light emitting structure according to claim 17, characterized in that: The color conversion material includes quantum dot material or fluorescent material, and the light converted by the color conversion material is in the blue band, green band, cyan band, yellow band, red band or infrared band.

19. The light emitting structure according to claim 17, characterized in that: The wavelengths of at least a portion of the light converted by the color conversion material are located in the same wavelength band.

20. The light emitting structure according to any one of claims 1 to 14, characterized in that: The light emitting structure comprises at least two light emitting diode chips, and the light generated by the at least two light emitting diode chips is mixed to form the full-spectrum lighting source.

21. The light emitting structure according to any one of claims 1 to 14, characterized in that: The light emitting structure further comprises at least one single wavelength chip, wherein the single wavelength chip generates light of a single wavelength; The light generated by at least one of the light emitting diode chips is mixed with the light generated by the single wavelength chip to form the full spectrum lighting source.

22. The light emitting structure according to any one of claims 1 to 14, characterized in that: The light emitting structure further comprises at least one single wavelength chip and at least one color conversion layer, wherein the color conversion layer is arranged on the light emitting side of the single wavelength chip and / or the light emitting diode chip; The light generated by at least one of the light emitting diode chips, the light generated by at least one of the single wavelength chips, and the light converted by the color conversion layer are mixed to form a full spectrum lighting source.

23. The light emitting structure according to any one of claims 1 to 14, characterized in that: The first light-emitting layer includes at least one first layer, and the second light-emitting layer includes at least one second layer. The at least one first layer and the at least one second layer are stacked in sequence, and each of the first layers and each of the second layers generates light of one wavelength respectively.

24. A lighting device, characterized in that: It comprises a lighting lamp body, a light-emitting structure according to any one of claims 1 to 23, and a mosquito-repellent structure, wherein the mosquito-repellent structure generates mosquito-repellent light; The light emitting structure and the mosquito and insect repelling structure are placed in the same lighting lamp body or in different lighting lamp bodies.

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