Display panel and preparation method thereof

Abstract

The invention provides a display panel and a preparation method thereof. The display panel comprises a first electrode, a protective layer, a plurality of light emitting diode epitaxial wafers and a plurality of second electrodes, the first electrode is a common electrode, the plurality of light-emitting diode epitaxial wafers are respectively connected with the first electrode, the plurality of light-emitting diode epitaxial wafers are also respectively connected with the plurality of second electrodes, and the protective layer is located on one side, connected with the light-emitting diode epitaxial wafers, of the first electrode. The protective layer includes an organic sub-layer and a first inorganic sub-layer sequentially stacked on the first electrode. On one hand, the organic film layer in the organic and inorganic film layer structure can release inorganic film layer stress in a heating and pressurizing environment, inorganic film layer cracks caused by stress concentration are avoided, and on the other hand, the risk of overall fracture is smaller under the multi-insurance condition of the two film layers.

Description

Technical Field

[0001] The present disclosure relates to the field of light-emitting devices, and particularly to a display panel and a method for manufacturing the same. Background Art

[0002] A display panel is a device for displaying images, videos, and text information.

[0003] Related technologies provide a display panel, which includes a first electrode, a plurality of light-emitting diode epitaxial wafers, and a plurality of second electrodes. The first electrode is a common electrode, and the plurality of light-emitting diode epitaxial wafers are respectively connected to the first electrode, and the plurality of light-emitting diode epitaxial wafers are also respectively connected to the plurality of second electrodes.

[0004] In related technologies, when the second electrode is welded and bonded to the circuit board, the welding material is likely to overflow, resulting in a short circuit between the second electrode and the first electrode, causing an abnormality in the display panel. Summary of the Invention

[0005] Embodiments of the present disclosure provide a display panel and a method for manufacturing the same, which prevent the welding material from overflowing when the electrode is welded and bonded to the circuit board, resulting in an electrode short circuit, and improve the yield of the display panel. The technical solutions are as follows:

[0006] On the one hand, a display panel is provided, and the display panel includes:

[0007] A first electrode, a protective layer, a plurality of light-emitting diode epitaxial wafers, and a plurality of second electrodes;

[0008] The first electrode is a common electrode, the plurality of light-emitting diode epitaxial wafers are respectively connected to the first electrode, the plurality of light-emitting diode epitaxial wafers are also respectively connected to the plurality of second electrodes, the protective layer is located on the surface where the first electrode is connected to the light-emitting diode epitaxial wafer, and the protective layer includes an organic sub-layer and a first inorganic sub-layer that are sequentially stacked on the first electrode.

[0009] Optionally, the organic sub-layer is formed by spin coating or inkjet printing a mixture of an organic glue solution and a black glue.

[0010] Optionally, the ratio of the black glue to the organic glue solution is 0.8 to 1 to 0.9 to 1.

[0011] Optionally, the protective layer further includes a second inorganic sub-layer located between the organic sub-layer and the first electrode.

[0012] Optionally, the thickness of the protective layer is less than the thickness of the light-emitting diode epitaxial wafer, and the difference between the thickness of the protective layer and the thickness of the light-emitting diode epitaxial wafer is 1 to 2 μm.

[0013] Optionally, the thickness of the organic sub-layer is 2 to 3 μm, the thickness of the first inorganic sub-layer is 1 to 2 μm, and the thickness of the second inorganic sub-layer is 1 to 2 μm.

[0014] Optionally, the thickness of the protective layer is greater than the sum of the thicknesses of the light-emitting diode epitaxial wafer and the second electrode.

[0015] Optionally, the display panel further includes a circuit board;

[0016] The plurality of second electrodes are connected to the circuit board, and the first electrode is connected to the circuit board.

[0017] On the other hand, a method for manufacturing a display panel is provided. The method for manufacturing a display panel includes:

[0018] Forming a plurality of light-emitting diode epitaxial wafers and a plurality of second electrodes on the first electrode. The first electrode is a common electrode. The plurality of light-emitting diode epitaxial wafers are respectively connected to the first electrode, and the plurality of light-emitting diode epitaxial wafers are also respectively connected to the plurality of second electrodes;

[0019] Fabricating a protective layer on the first electrode. The protective layer is located on the side where the first electrode is connected to the light-emitting diode epitaxial wafer. The protective layer includes an organic sub-layer and a first inorganic sub-layer that are sequentially stacked on the first electrode.

[0020] Optionally, the step of fabricating a protective layer on the first electrode includes:

[0021] Fabricating a layer of photoresist on the plurality of second electrodes;

[0022] Sequentially depositing a second inorganic film layer, an organic film layer, and a first inorganic film layer that cover the photoresist and the first electrode;

[0023] Removing the photoresist and the second inorganic film layer, organic film layer, and first inorganic film layer on the photoresist, and retaining the second inorganic film layer, organic film layer, and first inorganic film layer on the first electrode to obtain the protective layer.

[0024] The beneficial effects brought by the technical solution provided by the embodiments of the present disclosure are:

[0025] In the embodiments of the present disclosure, by providing an organic sub-layer and a first inorganic sub-layer as a protective layer, the protective layer is located on the side where the first electrode is connected to the light-emitting diode epitaxial wafer, that is, in the gaps between multiple light-emitting diode epitaxial wafers. The above-mentioned setting of the protective layer can, on the one hand, prevent the welding material from overflowing and causing a short circuit between the second electrode and the first electrode; and even in an environment of heating and pressurization, the organic film layer can release the stress of the inorganic film layer, avoiding electrode short circuits caused by cracks in the protective layer due to stress concentration. On the other hand, due to the multiple insurance of the two film layers, the risk of overall fracture is smaller. In addition, the protective layer can also protect the side walls of the light-emitting diode epitaxial wafer, avoiding damage to the epitaxy at the gaps of the light-emitting diode epitaxial wafer caused by the huge energy during the laser dissociation process, and can achieve a good epitaxial protection effect. Through the above protection, the reliability of the display panel is enhanced. Description of the Drawings

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present disclosure. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0027] Figure 1 It is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure;

[0028] Figure 2 It is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure;

[0029] Figure 3 It is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure;

[0030] Figure 4 It is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure;

[0031] Figure 5 It is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure;

[0032] Figure 6 It is a flowchart of a method for manufacturing a display panel provided by an embodiment of the present disclosure;

[0033] Figure 7 It is a flowchart of another method for manufacturing a display panel provided by an embodiment of the present disclosure;

[0034] Figure 8 It is a schematic structural diagram during the manufacturing process of a display panel provided by an embodiment of the present disclosure;

[0035] Figure 9It is a schematic structural diagram in the manufacturing process of a display panel provided by an embodiment of the present disclosure.

[0036] The reference numerals are as follows:

[0037] 101: First electrode; 102: Protective layer; 103: Light-emitting diode epitaxial wafer; 104: Second electrode; 105: Photoresist

[0038] 200: Circuit board; 201: IC solder joint;

[0039] 1021: Organic sub-layer; 1022: First inorganic sub-layer; 1023; Second inorganic sub-layer;

[0040] 1031: First semiconductor layer; 1032: Active layer; 1033: Second semiconductor layer. Detailed implementation manners

[0041] To make the objectives, technical solutions, and advantages of the present disclosure clearer, the following will further describe the embodiments of the present disclosure in detail with reference to the accompanying drawings.

[0042] Figure 1 It is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure. Refer to Figure 1 , the display panel includes: a first electrode 101, a protective layer 102, a plurality of light-emitting diode epitaxial wafers 103, and a plurality of second electrodes 104.

[0043] Among them, the first electrode 101 is a common electrode, and the plurality of light-emitting diode epitaxial wafers 103 are respectively connected to the first electrode 101, and the plurality of light-emitting diode epitaxial wafers 103 are also respectively connected to the plurality of second electrodes 104. The protective layer 102 is located on the surface where the first electrode 101 is connected to the light-emitting diode epitaxial wafer, and the protective layer 102 includes an organic sub-layer 1021 and a first inorganic sub-layer 1022 that are sequentially stacked on the first electrode 101.

[0044] In the embodiment of the present disclosure, by setting an organic sub-layer and a first inorganic sub-layer as the protective layer, the protective layer is located on the surface where the first electrode is connected to the light-emitting diode epitaxial wafer, that is, in the gaps between the plurality of light-emitting diode epitaxial wafers. The above-mentioned protective layer setting can, on the one hand, prevent the welding material from overflowing and causing a short circuit between the second electrode and the first electrode; and, even in an environment of heating and pressurization, the organic film layer can release the stress of the inorganic film layer, avoiding electrode short circuits caused by cracks in the protective layer due to stress concentration. On the other hand, due to the multiple insurance of the two film layers, the risk of overall fracture is smaller. In addition, the protective layer can also protect the side walls of the light-emitting diode epitaxial wafers, avoiding damage to the epitaxy at the gaps of the light-emitting diode epitaxial wafers caused by the huge energy during the laser dissociation process, and can achieve a good epitaxial protection effect. Through the above protection, the reliability of the display panel is enhanced.

[0045] In an embodiment of the present disclosure, the organic sub-layer 1021 is formed by spin coating or inkjet printing a mixture of an organic glue solution and a black glue.

[0046] By using a mixture of an organic glue solution and a black glue, the organic sub-layer can be made black. The black organic sub-layer can act as a barrier wall between multiple light-emitting diode epitaxial wafers, avoiding light crosstalk between multiple light-emitting diode epitaxial wafers during the display process. The process of forming by spin coating or inkjet printing facilitates the formation of the organic sub-layer.

[0047] In an embodiment of the present disclosure, the organic glue solution is the main body in the glue solution for making the organic sub-layer, and can be polydimethylsiloxane (PDMS), epoxy resin glue, or synthetic silica gel. The organic film glue made of the above materials can release the stress of the inorganic film layer in an environment of heating and pressurization, avoiding cracks in the inorganic film layer caused by stress concentration.

[0048] Exemplarily, the organic film glue is a PDMS layer.

[0049] In an embodiment of the present disclosure, the black glue can be black epoxy resin glue.

[0050] In an embodiment of the present disclosure, the ratio of the black glue to the organic glue solution in the organic sub-layer 1021 can be 0.8 - 1 to 0.9 - 1. Using the above ratio can ensure both the strength of the organic sub-layer and the formation of the black organic sub-layer.

[0051] Exemplarily, the ratio of the black glue to the organic glue solution in the organic sub-layer is 0.9 - 1.

[0052] Figure 2 is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure. Refer to Figure 2 , compared with Figure 1 the structure shown, the protective layer 102 further includes a second inorganic sub-layer 1023 located between the organic sub-layer 1021 and the first electrode 101.

[0053] In this implementation manner, the second inorganic sub-layer is mainly provided to isolate moisture.

[0054] In an embodiment of the present disclosure, the first inorganic sub-layer 1022 and the second inorganic sub-layer 1023 can be SiN 2 or SiO 2 layers. SiO 2 or SiN 2 is an inorganic film layer, which has insulation properties, can prevent short circuits between electrodes, and can also isolate water and oxygen to protect the electrodes.

[0055] Exemplarily, the first inorganic sub-layer 1022 and the second inorganic sub-layer 1023 are SiN2 layer

[0056] As Figure 2 shown, in a possible implementation of the present disclosure, the thickness of the protective layer 102 is less than the thickness of the light-emitting diode epitaxial wafer 103, and the difference between the thickness of the protective layer 102 and the thickness of the light-emitting diode epitaxial wafer 103 is 1-2 μm. Using the above thickness allows the electrode to be exposed, facilitating subsequent metal bonding operations.

[0057] Exemplarily, the thickness of the protective layer 102 is less than the thickness of the light-emitting diode epitaxial wafer 103, and the difference between the thickness of the protective layer 102 and the thickness of the light-emitting diode epitaxial wafer 103 is 2 μm.

[0058] In the embodiments of the present disclosure, the thickness of the organic sub-layer 1021 can be 2-3 μm. The organic sub-layer fabricated with the above thickness can release the stress of the inorganic film layer and avoid cracks in the inorganic film layer caused by stress concentration.

[0059] Exemplarily, the thickness of the organic sub-layer 1021 is 3 μm.

[0060] In the embodiments of the present disclosure, the thickness of the first inorganic sub-layer 1022 can be 1-2 μm. The first inorganic sub-layer 1022 fabricated with the above thickness can increase the thickness of the protective layer, making the risk of overall fracture of the protective layer smaller.

[0061] Exemplarily, the thickness of the first inorganic sub-layer 1022 is 2 μm.

[0062] In the embodiments of the present disclosure, the thickness of the second inorganic sub-layer 1023 can be 1-2 μm. The second inorganic sub-layer fabricated with the above thickness can block water vapor and avoid the corrosion of the electrode structure by water and oxygen.

[0063] Exemplarily, the thickness of the second inorganic sub-layer 1023 is 2 μm.

[0064] Figure 3 is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure. Refer to Figure 3 , compared with Figure 2 , the thickness of the protective layer 102 is greater than the sum of the thicknesses of the light-emitting diode epitaxial wafer 103 and the second electrode 104. Using this thickness design can prevent the solder between the epitaxial structures from flowing to other light-emitting diode epitaxial wafers and causing short circuits. Secondly, the thickness of the electrode welding can be controlled by the height of the protective layer, avoiding uneven bonding force in some areas caused by substrate warping.

[0065] Figure 4 is a schematic structural diagram of a display panel provided by an embodiment of the present disclosure. Refer to Figure 4 , the display panel further includes a circuit board 200.

[0066] Among them, multiple second electrodes 104 are connected to the circuit board 200, and the first electrode 101 is connected to the circuit board 200. Connecting the electrodes to the circuit board can form an electrical path between the light-emitting diode electrodes and the circuit board.

[0067] In the embodiment of the present disclosure, the first electrode 101 can be an N electrode.

[0068] In the embodiment of the present disclosure, the second electrode 104 can be a P electrode.

[0069] In the embodiment of the present disclosure, the light-emitting diode epitaxial wafer 103 can be a MicroLight Emitting Diode Display (Micro LED) epitaxial wafer.

[0070] Figure 5 It is a schematic structural diagram of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure. Refer to Figure 5 , the light-emitting diode epitaxial wafer 103 can include a first semiconductor layer 1031, an active layer 1032, and a second semiconductor layer 1033.

[0071] In the embodiment of the present disclosure, the first semiconductor layer 1031 can be an N-type semiconductor layer, and the second semiconductor layer 1033 can be a P-type semiconductor layer.

[0072] For example, the first semiconductor layer 1031 can be an N-type GaN layer, and the second semiconductor layer 1032 can be a P-type GaN layer.

[0073] In other embodiments, the first semiconductor layer 1031 can be a P-type semiconductor layer, and the second semiconductor layer 1032 can be an N-type semiconductor layer.

[0074] In the embodiment of the present disclosure, the active layer 1032 can be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well layer.

[0075] Of course, the above structure of the light-emitting diode epitaxial wafer is only an example, and it can also include more or fewer film layers.

[0076] In the embodiment of the present disclosure, the circuit board 200 can be a Flexible Printed Circuit (FPC).

[0077] In the embodiment of the present disclosure, the circuit board 200 is welded to the first electrode 101 and the second electrode 104 through Integrated Circuit (IC) solder joints 201, and the IC solder joints 201 can be made of Sn or In.

[0078] Exemplarily, the IC solder joints 201 can be made of Sn.

[0079] As shown in the figure, each second electrode 104 is individually welded to the circuit board, and one end of the first electrode 101 is welded to the circuit board.

[0080] Figure 6 It is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 6 , the method steps include:

[0081] S11. Fabricate a plurality of light-emitting diode epitaxial wafers and a plurality of second electrodes on the first electrode. The first electrode is a common electrode. The plurality of light-emitting diode epitaxial wafers are respectively connected to the first electrode, and the plurality of light-emitting diode epitaxial wafers are also respectively connected to the plurality of second electrodes.

[0082] S12. Fabricate a protective layer on the first electrode. The protective layer is located on the side where the first electrode is connected to the light-emitting diode epitaxial wafer. The protective layer includes a first inorganic sub-layer and an organic sub-layer stacked in sequence on the first electrode.

[0083] In the embodiment of the present disclosure, by providing an organic sub-layer and a first inorganic sub-layer, on the one hand, the organic film layer in the organic-inorganic film layer structure can release the stress of the inorganic film layer in a heating and pressurizing environment, avoiding cracks in the inorganic film layer caused by stress concentration, resulting in the overflow of welding materials and causing electrode short-circuit. On the other hand, due to the multiple insurance of the two film layers, the risk of overall fracture is smaller. In addition, the addition of the two protective layers is equivalent to increasing the thickness of the light-emitting diode epitaxial wafer, avoiding damage to the epitaxy at the gap of the light-emitting diode epitaxial wafer caused by the huge energy during the laser dissociation process, and can achieve a good epitaxial protection effect.

[0084] Figure 7 It is a flowchart of another method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 7 , the method steps include:

[0085] S21. Form a first electrode, a plurality of light-emitting diode epitaxial wafers, and a plurality of second electrodes.

[0086] In one example, step S21 includes:

[0087] The first step is to form a first electrode.

[0088] In the embodiment of the present disclosure, the first electrode may be an N electrode.

[0089] The second step is to form a plurality of light-emitting diode epitaxial wafers on the first electrode.

[0090] The light-emitting diode epitaxial wafer may be composed of a first semiconductor layer, an active layer, and a second semiconductor layer.

[0091] In an embodiment of the present disclosure, the first semiconductor layer may be an N-type semiconductor layer, and the second semiconductor layer may be a P-type semiconductor layer.

[0092] For example, the first semiconductor layer may be an N-type GaN layer, and the second semiconductor layer may be a P-type GaN layer.

[0093] In other embodiments, the first semiconductor layer may be a P-type semiconductor layer, and the second semiconductor layer may be an N-type semiconductor layer.

[0094] In an embodiment of the present disclosure, the active layer may be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well layer.

[0095] Third step, form a second electrode on a plurality of light-emitting diode epitaxial wafers.

[0096] In an embodiment of the present disclosure, the second electrode may be a P electrode.

[0097] S22. Cover a layer of photoresist on the first electrode and the second electrode, and perform patterning.

[0098] Figure 8 is a schematic structural diagram in the manufacturing process of a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 8 , the first electrode 101, a plurality of light-emitting diode epitaxial wafers 103, and a plurality of second electrodes 104 are stacked in sequence, and the photoresist 105 covers the surfaces of the plurality of second electrodes 104.

[0099] In one example, step S22 includes:

[0100] First step, cover a layer of photoresist on the first electrode and the plurality of second electrodes.

[0101] Second step, expose and develop the photoresist to remove the photoresist on the first electrode.

[0102] S23. Fabricate a protective layer on the first electrode and the photoresist covering the plurality of second electrodes.

[0103] Figure 9 is a schematic structural diagram in the manufacturing process of a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 9 , the protective layer 102 covers the surface of the photoresist 105 on the first electrode 101 and the plurality of second electrodes 104, and the protective layer 102 is composed of an organic sub-layer 1021, a first inorganic sub-layer 1022, and a second inorganic sub-layer 1023.

[0104] In one example, step S23 includes:

[0105] First step, fabricate the second inorganic sub-layer.

[0106] In an embodiment of the present disclosure, the first protective sub-layer is fabricated by plasma-enhanced chemical vapor deposition (PECVD).

[0107] In an embodiment of the present disclosure, the second inorganic sub-layer can be SiN 2 or SiO 2 layer.

[0108] Exemplarily, the second inorganic sub-layer is a SiN 2 layer. SiO 2 or SiN 2 is an inorganic film layer, which has insulation properties, can prevent short circuits between electrodes, and can isolate water and oxygen to protect the electrodes at the same time.

[0109] The second step is to fabricate the organic sub-layer.

[0110] In an embodiment of the present disclosure, the organic sub-layer is made by spin coating or inkjet printing a mixture of organic glue and black glue.

[0111] Mixing organic glue and black glue can make the organic sub-layer black. The black organic sub-layer can act as a barrier wall between multiple light-emitting diode epitaxial wafers, avoiding light crosstalk between multiple light-emitting diode epitaxial wafers during the display process. The process of spin coating or inkjet printing is convenient for the formation of the organic sub-layer.

[0112] In an embodiment of the present disclosure, the rate of spin coating or inkjet printing can be 2400 rpm / 30 s to 2600 rpm / 30 s.

[0113] Exemplarily, the rate of spin coating or inkjet printing is 2500 rpm / 30 s.

[0114] In an embodiment of the present disclosure, the organic glue can be PDMS, epoxy resin glue or synthetic silica gel. The organic film layer glue made of the above materials can release the stress of the inorganic film layer in a heating and pressurizing environment, avoiding cracks in the inorganic film layer caused by stress concentration.

[0115] Exemplarily, the organic film layer glue is a PDMS layer.

[0116] In an embodiment of the present disclosure, the black glue can be black epoxy resin glue.

[0117] In an embodiment of the present disclosure, the ratio of black glue to organic glue in the organic sub-layer can be 0.8 - 1 to 0.9 - 1. Using the above ratio can ensure both the strength of the organic sub-layer and the formation of the black organic sub-layer.

[0118] Exemplarily, the ratio of the black glue to the organic glue solution in the organic sub-layer is 0.9 to 1.

[0119] The third step is to fabricate the second inorganic sub-layer.

[0120] In the embodiments of the present disclosure, the second inorganic sub-layer is fabricated by PECVD.

[0121] In the embodiments of the present disclosure, the second inorganic sub-layer can be SiN 2 or SiO 2 layer. SiO 2 or SiN 2 is an inorganic film layer, which has insulation properties, can prevent short circuits between electrodes, and can isolate water and oxygen to protect the electrodes.

[0122] Exemplarily, the second inorganic sub-layer is SiN 2 layer.

[0123] In a possible implementation manner of the present disclosure, the thickness of the protective layer is less than the thickness of the light-emitting diode epitaxial wafer, and the difference between the thickness of the protective layer and the thickness of the light-emitting diode epitaxial wafer is 1 to 2 μm. Adopting the above thickness can expose the electrodes, facilitating subsequent metal bonding operations.

[0124] In the embodiments of the present disclosure, the thickness of the organic sub-layer can be 2 to 3 μm. The organic sub-layer fabricated with the above thickness can release the stress of the inorganic film layer and avoid cracks in the inorganic film layer caused by stress concentration.

[0125] Exemplarily, the thickness of the organic sub-layer is 3 μm.

[0126] In the embodiments of the present disclosure, the thickness of the second inorganic sub-layer can be 1 to 2 μm. The second inorganic sub-layer fabricated with the above thickness can increase the thickness of the protective layer, making the risk of overall fracture of the protective layer smaller.

[0127] Exemplarily, the thickness of the second inorganic sub-layer is 2 μm.

[0128] In the embodiments of the present disclosure, the thickness of the second inorganic sub-layer can be 1 to 2 μm. The second inorganic sub-layer fabricated with the above thickness can block water vapor and avoid corrosion of the electrode structure by water and oxygen.

[0129] Exemplarily, the thickness of the second inorganic sub-layer is 2 μm.

[0130] In another possible implementation manner of the present disclosure, the thickness of the protective layer is greater than the sum of the thicknesses of the light-emitting diode epitaxial wafer and the second electrode. Adopting this thickness design can avoid the solder between the epitaxial structures flowing to other epitaxial structures and causing short circuits. Secondly, the thickness of the electrode welding can be controlled by the height of the protective layer, avoiding uneven bonding force in some areas caused by substrate warping.

[0131] S24. Remove the photoresist on the second electrode and the protective layer on the photoresist.

[0132] In the embodiment of the present disclosure, the photoresist is exposed, and the photoresist on the second electrode and the protective layer on the photoresist are removed.

[0133] S25. Connect one end of the first electrode to the circuit board, and connect each second electrode to the circuit board.

[0134] In the embodiment of the present disclosure, the circuit board is soldered to the first electrode and the second electrode through IC solder joints.

[0135] In the embodiment of the present disclosure, the circuit board can be an FPC.

[0136] In the embodiment of the present disclosure, the IC solder joints can be made of Sn or In.

[0137] Exemplarily, the IC solder joints can be made of Sn.

[0138] S26. Remove the substrate.

[0139] Exemplarily, the substrate and the first electrode are bonded by a colloid. When removing the substrate, the substrate can be removed by laser lift-off.

[0140] The above are only optional embodiments of the present disclosure, and are not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A display panel, characterized in that: The display panel comprises: a first electrode (101), a protective layer (102), a plurality of light-emitting diode epitaxial wafers (103) and a plurality of second electrodes (104); The first electrode (101) is a common electrode, the plurality of light-emitting diode epitaxial wafers (103) are respectively connected to the first electrode (101), and the plurality of light-emitting diode epitaxial wafers (103) are also respectively connected to the plurality of second electrodes (104); the protective layer (102) is located on a side where the first electrode (101) is connected to the light-emitting diode epitaxial wafer (103); and the protective layer (102) comprises an organic sublayer (1021) and a first inorganic sublayer (1022) which are sequentially stacked on the first electrode (101).

2. The display panel according to claim 1, characterized in that: The organic sublayer (1021) is made by spin coating or inkjet printing a mixture of organic glue and black glue.

3. The display panel according to claim 2, characterized in that: The ratio of the black glue to the organic glue is 0.8-1 to 0.9-1.

4. The display panel according to any one of claims 1 to 3, characterized in that: The protective layer (102) further comprises a second inorganic sublayer (1023) located between the organic sublayer (1021) and the first electrode (101).

5. The display panel according to claim 4, characterized in that: The thickness of the protective layer (102) is smaller than the thickness of the light-emitting diode epitaxial wafer (103), and the difference between the thickness of the protective layer (102) and the thickness of the light-emitting diode epitaxial wafer (103) is 1 to 2 μm.

6. The display panel according to claim 5, characterized in that: The thickness of the organic sublayer (1021) is 2 to 3 μm, the thickness of the first inorganic sublayer (1022) is 1 to 2 μm, and the thickness of the second inorganic sublayer (1023) is 1 to 2 μm.

7. The display panel according to claim 4, characterized in that: The thickness of the protective layer (102) is greater than the sum of the thicknesses of the light-emitting diode epitaxial wafer (103) and the second electrode (104).

8. The display panel according to any one of claims 1 to 3, characterized in that: The display panel also includes a circuit board (200); The plurality of second electrodes (104) are connected to the circuit board (200), and the first electrode (101) is connected to the circuit board (200).

9. A method for preparing a display panel, characterized in that: The display panel preparation method comprises: Forming a plurality of light-emitting diode epitaxial wafers and a plurality of second electrodes on the first electrode, wherein the first electrode is a common electrode, the plurality of light-emitting diode epitaxial wafers are respectively connected to the first electrode, and the plurality of light-emitting diode epitaxial wafers are also respectively connected to the plurality of second electrodes; A protective layer is fabricated on the first electrode. The protective layer is located on a side of the first electrode connected to the light emitting diode epitaxial wafer. The protective layer comprises an organic sublayer and a first inorganic sublayer sequentially stacked on the first electrode.

10. The method for preparing a display panel according to claim 9, characterized in that: The step of forming a protective layer on the first electrode comprises: forming a layer of photoresist on the plurality of second electrodes; Depositing in sequence a second inorganic film layer, an organic film layer and a first inorganic film layer covering the photoresist and the first electrode; The photoresist and the second inorganic film layer, the organic film layer and the first inorganic film layer on the photoresist are removed, and the second inorganic film layer, the organic film layer and the first inorganic film layer on the first electrode are retained to obtain the protective layer.

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