Gate dielectric and its applications and organic electrochemical transistors

Abstract

The application discloses a kind of gate dielectric and its application and organic electrochemical transistor.Gate dielectric includes aqueous solution containing final concentration 0-5mM iron ion and final concentration 0.1-1mM dopamine or its salt, the method for preparing organic electrochemical transistor using gate dielectric is prepared on substrate film vacuum evaporation electrode pattern of gold material, fill organic semiconductor material in channel region, then annealing treatment obtains to be packaged device;Packaging groove is covered on to-be-packaged device, the gate dielectric is injected in packaging groove, and organic electrochemical transistor is obtained, and the device includes the substrate film provided with drain electrode, source electrode and gate electrode, drain electrode and source electrode are provided with PEDOT:PSS channel region, and gate electrode and channel region are packaged with gate dielectric.The synaptic plasticity behavior of electrochemical transistor can be freely adjusted and converted by means of the component concentration variation of gate dielectric in the application.The application can be applied to new generation of chemical response's neuro morphic system.

Description

TECHNICAL FIELD

[0001] The present application relates to the cross field of semiconductor microelectronic devices and artificial intelligence, and in particular to a gate dielectric and its application and an organic electrochemical transistor. BACKGROUND

[0002] Neurotransmitter molecules and ions play an important role in the process of neuronal information transmission, for example, dopamine homeostasis maintains normal neural information transmission and reward learning process, or instability leads to neurodegenerative diseases such as Alzheimer's disease and Parkinson's disease.

[0003] A neuromorphic system based on an organic electrochemical transistor can transduce the composition and concentration information of chemical molecules and ions into voltage and current pulse information in a neural transmission process, and exhibit brain-like learning rules that simulate long-term and short-term synaptic plasticity and presynaptic pulse modulation. A chemical synapse device capable of responding to dopamine stimulation is disclosed in Chinese Patent CN117794327A. The device simulates long-term plasticity (LTP) of synapses by introducing dopamine as a gate dielectric in a NaCl solution, and short-term plasticity (STP) of synapses when there is no dopamine in the NaCl solution. The principle is as follows: under the action of a gate voltage, ions in the NaCl solution enter / exit the channel, changing the conductance value of the channel semiconductor material. When the gate voltage is removed, the ions return to the initial state. This process corresponds to the short-term plasticity of biological synapses. When the chemical synapse device senses dopamine stimulation at the gate end, dopamine will be oxidized under the action of a gate voltage, and the generated electrons and H + enter the channel, changing the channel conductance value. However, when the gate voltage is removed, the channel conductance change induced by this process does not recover, corresponding to the long-term plasticity of biological synapses. Although introducing dopamine into the gate dielectric can simulate LTP of synapses, when STP of synapses needs to be simulated, dopamine in the gate dielectric needs to be completely removed. Therefore, metal cations such as sodium ions cannot block the entry of electrons and H + into the channel generated by the oxidation of dopamine, nor can they restore the channel conductance change. Therefore, metal cations such as sodium ions do not have the ability to adjust or convert LTP to STP in response to dopamine stimulation. How to arbitrarily adjust and convert the synaptic plasticity behavior of the electrochemical transistor based on dopamine between LTP and STP has become a technical problem to be solved. SUMMARY

[0004] Invention purposes: The purpose of the present application is to provide a gate medium to solve the problem of how to adjust and convert the synaptic plasticity behavior of electrochemical transistors. Another purpose of the present application is to provide a preparation method of the gate medium to solve the problem of how to prepare the gate medium. The third purpose of the present application is to provide the application of the above-mentioned gate medium in the preparation of organic electrochemical transistors to solve the problem of how to prepare organic electrochemical transistors. The fourth purpose of the present application is to provide an organic electrochemical transistor capable of being arbitrarily adjusted and converted between LTP and STP.

[0005] Technical scheme: The gate medium provided by the present application comprises an aqueous solution containing an end concentration of 0-5mM iron ions and an end concentration of 0.1-1mM dopamine or its salt.

[0006] The present application utilizes the electrochemical process of dopamine and iron ions under the action of voltage to dope the channel characteristics, and is applied to simulate the synaptic plasticity function of neural synapses.

[0007] Preferably, the end concentration of iron ions is 1-500μM, and the end concentration of dopamine or its salt is 0.5-1mM.

[0008] Preferably, the iron ions are Fe 3+ .

[0009] The second aspect of the present application discloses a preparation method of the above-mentioned gate medium, comprising the following steps: dissolving a ferric salt and dopamine hydrochloride in water to obtain the gate medium.

[0010] Preferably, the ferric salt is selected from at least one of ferric chloride, ferric sulfate, ferric nitrate and ferric citrate.

[0011] Preferably, the molar ratio of the ferric salt to dopamine hydrochloride is 1-10:1-10. Preferably, it is 1-5:1-5.

[0012] By changing the molar ratio of ferric ions and dopamine hydrochloride in the gate medium, the present application can freely simulate and switch the long-term and short-term synaptic plasticity and the brain-like learning behavior of presynaptic pulse modulation.

[0013] The third aspect of the present application discloses the application of the above-mentioned gate medium in the preparation of organic electrochemical transistors.

[0014] The method for preparing an organic electrochemical transistor by using the above-mentioned gate medium comprises the following steps:

[0015] (1) vacuum evaporation of gold material on a substrate film to prepare an electrode pattern, the electrode pattern comprising a drain, a source and a gate which do not contact each other, and a channel region is left between the ends of the drain and the source;

[0016] (2) filling the channel region with organic semiconductor material to obtain an intermediate device, and annealing the intermediate device to obtain a device to be packaged;

[0017] (3) covering the device to be packaged with a packaging groove, and injecting the gate dielectric into the packaging groove, the packaging groove being used to package the gate dielectric on the gate and the channel region, to obtain an organic electrochemical transistor.

[0018] Preferably, in step (1), the vacuum evaporation method on the substrate film is as follows: fixing the double-coated pre-coated PET film under the mask plate, placing the gold particles in the evaporation boat, starting the molecular pump under vacuum condition, depositing the electrode pattern of gold material on the surface of the PET film at a deposition rate of 0.3-0.7 nm / min, until the thickness of the electrode pattern reaches 40-60 nm, and then closing the molecular pump and re-injecting inert gas after cooling.

[0019] In some embodiments, the thickness of the flexible PET film is at least 0.1 mm, the channel length is 2000 μm, the channel width is 60 μm, the thickness of the drain electrode, the source electrode and the gate electrode is 50 nm, the length of the source / drain electrode is 2 mm, the width is 1.25 mm, the length of the gate electrode is 2.25 mm, and the width is 1.25 mm. The vacuum condition is that the vacuum degree reaches 10 -5 Pa.

[0020] In some embodiments, before filling the channel region with the organic semiconductor material, the substrate film with the deposited electrode pattern needs to be ultrasonically cleaned in deionized water and then dried with nitrogen, for dust removal of the channel and gate regions.

[0021] Preferably, in step (1), the aspect ratio of the channel region is 25-40; in step (2), the organic semiconductor material is PEDOT:PSS, and the annealing condition is heating to 120-140℃ for 20-40 min; in step (3), the material of the packaging groove is polydimethylsiloxane.

[0022] In some embodiments, the filling method of the organic semiconductor material is as follows: pouring PEDOT:PSS into the dispensing tube, setting the dispensing head diameter to 100 μm, setting a long strip-shaped pattern with a width of 60 μm and a length of 2 mm, setting the dispensing rate to 20 mm / s, and setting the dispensing air pressure to 10 kPa, and then performing dispensing operation after channel position calibration. The thickness of the filled organic semiconductor material is 200-400 μm.

[0023] In some embodiments, the preparation method of the encapsulation groove is as follows: mixing the two at a volume ratio of 10:1 of polydimethylsiloxane to curing agent, covering the mold on the channel and the gate region, centrifuging the mixture at 6000-10000 rpm for 5-15 min, then injecting the mixture into the mold, setting the temperature to 50-70 DEG C for drying and curing to form a PDMS encapsulation groove, at this time the bottom four sides of the encapsulation groove are sealed and connected with the PET film.

[0024] The fourth aspect of the present application discloses an organic electrochemical transistor, comprising a substrate film provided with a planar electrode pattern, the planar electrode pattern comprising a drain, a source and a gate which are not in contact with each other, a channel region being left between the ends of the drain and the source, the channel region being filled with PEDOT:PSS, and the gate and the channel region being encapsulated with the above-mentioned gate medium.

[0025] The above-mentioned organic electrochemical transistor can be used to simulate the short-term synaptic plasticity (STP) and long-term synaptic plasticity (LTP) behaviors of a neural synapse, and the learning and memory behaviors of the neural synapse can be simulated by means of gate voltage pulse mode modulation.

[0026] Advantages: Compared with the prior art, the present application has the following obvious advantages:

[0027] The organic electrochemical transistor prepared in the present application responds to iron ions and dopamine. Under the condition of a positive gate voltage pulse, the electrochemical oxidation process of dopamine molecules forms hydrogen ions, which are injected into the PEDOT:PSS channel under the action of a positive voltage and combined with PSS - , thereby reducing the number of holes in PEDOT + : PSS, resulting in a decrease in drain current. The combination of iron ions and dopamine molecules prevents the injection of hydrogen ions into the PEDOT:PSS channel, thereby increasing the drain current. Therefore, the organic electrochemical transistor exhibits synaptic plasticity behavior that changes with the ratio of dopamine to iron ions. When the content of dopamine in the liquid gate medium is relatively high, long-term potentiation is exhibited, and when the content of iron ions is relatively high, short-term plasticity is exhibited. By means of the change in the concentration of the components of the gate medium, the synaptic plasticity behavior of the electrochemical transistor can be freely adjusted and converted.

[0028] The present application can be applied to a new generation of chemically responsive neuromorphic systems, and is helpful for a neuromorphic computing system inspired by chemical molecules and ions. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 FIG. 1 is a schematic diagram of the device structure of the organic electrochemical transistor in the present application;

[0030] Figure 2 FIG. 4 is a response curve diagram of dopamine molecules of the organic electrochemical transistor;

[0031] Figure 3Dopamine molecule and iron ion response curve of organic electrochemical transistor in the application;

[0032] Figure 4 Pulse input curve of organic electrochemical transistor device in the application;

[0033] Figure 5 Comparison diagram of iron ion inhibiting long-term plasticity of dopamine artificial synapse;

[0034] Figure 6 Simulation synaptic plasticity of dopamine and different cations as gate dielectric artificial synapse;

[0035] Figure 7 Principle verification experimental result diagram of iron ion playing a regulatory role. DETAILED DESCRIPTION

[0036] The technical solutions of the application are further described below with reference to the drawings.

[0037] Example 1: A gate dielectric is an aqueous solution containing a final concentration of 100 μM Fe 3+ and a final concentration of 1 mM dopamine hydrochloride. The gate dielectric is prepared by dissolving anhydrous ferric chloride and dopamine hydrochloride in a molar ratio of 1:10 in pure water.

[0038] The above-mentioned gate dielectric is used to prepare an organic electrochemical transistor, and the method is as follows:

[0039] (1) A gold material electrode pattern is prepared on a substrate film by vacuum evaporation, and the electrode pattern includes a drain, a source and a gate that do not contact each other, and a channel region is left between the ends of the drain and the source, the channel length is 2000 μm, the channel width is 60 μm, the source / drain length is 2 mm, the width is 1.25 mm, the gate length is 2.25 mm, and the width is 1.25 mm. The specific evaporation method is as follows:

[0040] A double-sided coated pre-coated PET film with a thickness of 0.125 mm is fixed under a mask plate and placed in the evaporation instrument cavity, and 2 g of gold particles are placed in the evaporation boat; a mechanical pump is started to evacuate, and when the vacuum degree is 10 -1 Pa, the molecular pump is started until the vacuum degree reaches 10 -5 Pa, at this time the evaporation boat starts to work, and the deposition rate is set to 0.5 nm / min to start depositing the gold material electrode pattern on the surface of the PET film, until the thickness of the drain, source and gate is 50 nm, at this time the molecular pump is turned off and waits for cooling to the initial state, and nitrogen gas is re-injected. The substrate film with the electrode pattern after evaporation is ultrasonically cleaned in a deionized water environment for 10 min, and the channel and gate regions are dried with a nitrogen gas gun for 5 min to ensure dust removal.

[0041] (2) Fill the channel region with organic semiconductor material, the specific method is: transfer the PET film deposited with electrode pattern to the point glue printer platform, pour the PEDOT:PSS printing ink with molar ratio of 10:1 into the point glue pipe, the volume is 2ml, the point glue head diameter is 100μm, draw 60μm wide, 2mm long, 300μm thick long strip pattern, set the point glue rate to 20mm / s, the point glue air pressure is 10kPa, first carry out channel position calibration and then carry out point glue operation, obtain the intermediate device.

[0042] (3) Anneal the intermediate device to 130℃ for 30min using hot table to obtain the device to be packaged;

[0043] (4) Cover the packaging groove on the device to be packaged, the method is: mix the polysiloxane (SYLGARD 184) and curing agent according to the volume ratio of 10:1, cover the mold of 2mm×4mm×5mm on the channel and gate region, centrifuge the mixed liquid at 8000rpm for 10min, then inject into the mold, set the temperature to 60℃ for drying and curing to form the PDMS packaging groove, at this time the bottom four sides of the packaging groove are sealed and connected with the PET film and cover the channel and gate region. TM 184) and curing agent according to the volume ratio of 10:1, cover the mold of 2mm×4mm×5mm on the channel and gate region, centrifuge the mixed liquid at 8000rpm for 10min, then inject into the mold, set the temperature to 60℃ for drying and curing to form the PDMS packaging groove, at this time the bottom four sides of the packaging groove are sealed and connected with the PET film and cover the channel and gate region.

[0044] (5) Inject the gate dielectric in the packaging groove to obtain the organic electrochemical transistor, the structure is shown in Figure 1

[0045] Example 2: the rest are the same as example 1, the difference is:

[0046] The gate dielectric is an aqueous solution containing a final concentration of 500μM Fe 3+ and a final concentration of 1mM dopamine hydrochloride.

[0047] Example 3: the rest are the same as example 1, the difference is:

[0048] The gate dielectric is an aqueous solution containing a final concentration of 1mM Fe 3+ and a final concentration of 1mM dopamine hydrochloride.

[0049] Example 4: the rest are the same as example 1, the difference is:

[0050] The gate dielectric is an aqueous solution containing a final concentration of 5mM Fe 3+ and a final concentration of 1mM dopamine hydrochloride.

[0051] Comparative example 1: the rest are the same as example 1, the difference is:

[0052] The gate dielectric is an aqueous solution containing only a final concentration of 1mM dopamine hydrochloride.

[0053] ​The organic electrochemical transistors prepared in Example 1 and Comparative Example 1 were tested for simulating the functions of synaptic LTP and STP after a voltage was applied to the gate, and the test results of Comparative Example 1 are shown in FIG. 1, where the gate medium was only a dopamine solution, and the test was performed using a Keithley 2616 as a gate pulse signal source. Under electrochemical action, the dopamine formed hydrogen ions at the gate oxide and entered the channel, showing a behavior similar to the stimulation enhancement (reward learning) behavior of dopamine transmission between neurons, and a long-term potentiation with an increased current change as the number of pulse stimuli increased. Figure 2 The test results of Example 1 are shown in FIG. 2, where the gate medium was a mixed solution of dopamine and trivalent iron ions, and the test was performed using a Keithley 2616 as a gate pulse signal source. The iron ions combined with the dopamine to inhibit the hydrogen ions generated by the dopamine from entering the channel, showing a cognitive forgetting behavior in which the dopamine transmission between neurons was blocked, and the current change was almost 0. Figure 3 The test results of Example 1 are shown in FIG. 2, where the gate medium was a mixed solution of dopamine and trivalent iron ions, and the test was performed using a Keithley 2616 as a gate pulse signal source. The iron ions combined with the dopamine to inhibit the hydrogen ions generated by the dopamine from entering the channel, showing a cognitive forgetting behavior in which the dopamine transmission between neurons was blocked, and the current change was almost 0.

[0054] The gate of Example 1 was input with pulse in the test environment, and the results are shown in FIG. 3. Figure 4 As shown in FIG. 3, two groups of 5 consecutive 0.7V square wave pulses with a duration of 12 seconds and an interval of 20 seconds were used to simulate the pre-synaptic potential change of neurons.

[0055] To understand the relationship between the proportion of iron ions in the dopamine gate medium and the simulation of synaptic plasticity, the organic electrochemical transistors prepared in Examples 2-4 and Comparative Example 1 were subjected to the same test, and the results are shown in FIG. 4. Figure 5 As shown in FIG. 4, Figure 5 FIG. 4a shows the test results of Comparative Example 1, Figure 5 FIG. 4b shows the test results of Example 2, Figure 5 FIG. 4c shows the test results of Example 3, Figure 5 FIG. 4d shows the test results of Example 4.

[0056] The pre-synaptic potential VG was represented by 10 consecutive 0.7V square wave voltage pulses, and the post-synaptic current PSC was represented by the current pulse of the drain. The artificial synapse could control the de-doping of the channel through the electrochemical process of the electroactive molecules under voltage pulse stimulation, and showed a spike amplitude and synaptic plasticity similar to biological synapses.

[0057] Figure 5 As shown in FIG. 4, in the gate medium composed of dopamine and iron ions, the characteristics of the transition from long-term synaptic plasticity to short-term plasticity increased with the increase of the concentration ratio of iron ions. This is similar to the degenerative process of dopamine neurons in the body invaded by iron ions, and the artificial synapse shows similar forgetting and cognitive impairment in the process of neurodegeneration as the biological synaptic plasticity. As shown in FIG. 4, Figure 5In 1 mM dopamine gate medium, the artificial synapse showed an increase in the amplitude of the post-synaptic current with the increase of the number of pre-synaptic pulses. The post-synaptic current changed 19 ± 7.03 μA at 157 seconds after the 10th voltage pulse, which was 8 ± 3.19% of the change of the post-synaptic current at 25 seconds before the stimulation. The decay time of the current was higher than 100 seconds, which indicated that the dopamine-gate-regulated artificial synapse showed an increase in the stimulation and long-term synaptic plasticity. As shown in Figure b, after adding 500 μM iron ions in the 1 mM dopamine gate medium, the stimulation-increasing property was inhibited. The post-synaptic current changed 9 ± 5.60 μA after the 10th voltage pulse, which was 4 ± 5.41% of the change before the stimulation, which was slightly less than the change of the post-synaptic current in the dopamine gate medium. The decay time of the current was about 75 seconds, which indicated that the iron ions inhibited the long-term synaptic plasticity regulated by the dopamine gate and turned to short-term. As shown in Figure c, after continuously adding 1 mM iron ions, the post-synaptic current changed 3 ± 0.51 μA after the 10th voltage pulse, which was only 1 ± 0.30% of the change before the stimulation. The decay time was less than 25 seconds. As shown in Figure d, when the concentration of the iron ions was increased to 5 mM, the current almost did not change (<1 μA) before and after the stimulation. The decay time was less than 5 seconds, which was obviously lower than the case mediated by dopamine. Therefore, with the addition of iron ions in the dopamine medium, the artificial synapse showed a clear long-term to short-term synaptic plasticity transition and a synaptic degradation behavior of the decrease in the pulse amplitude.

[0058] Comparative Example 2: The rest were the same as Example 1, except that:

[0059] The gate medium was an aqueous solution containing a final concentration of 100 mM NaCl.

[0060] Comparative Example 3: The rest were the same as Example 1, except that:

[0061] The gate medium was an aqueous solution containing a final concentration of 100 mM KCl

[0062] Comparative Example 4: The rest were the same as Example 1, except that:

[0063] The gate medium was an aqueous solution containing a final concentration of 50 mM NaCl and a final concentration of 0.5 mM dopamine hydrochloride.

[0064] Comparative Example 5: The rest were the same as Example 1, except that:

[0065] The gate medium was an aqueous solution containing a final concentration of 50 mM KCl and a final concentration of 0.5 mM dopamine hydrochloride.

[0066] Comparative Example 6: The rest were the same as Example 1, except that:

[0067] The gate dielectric is an aqueous solution containing 50 mM final concentration of CaCl2and 0.5 mM final concentration of dopamine hydrochloride.

[0068] Comparative Example 7: The rest is the same as Example 1, except that:

[0069] The gate dielectric is an aqueous solution containing 50 mM final concentration of CaCl2and 0.5 mM final concentration of dopamine hydrochloride.

[0070] In order to test whether other metal cations can inhibit the long-term synaptic plasticity of artificial synapses when dopamine molecules are used as gate dielectric, the pulse response of dopamine and one of dopamine and sodium ion, potassium ion, calcium ion, copper ion mixed as gate dielectric is tested. The results are shown in Figure 6 Figure 6 Figures a-g in the middle are the test results of Comparative Examples 1-7, wherein figure a shows that dopamine mediates the long-term synaptic plasticity of artificial synapses, figures b and c show that sodium ion and potassium ion exhibit short-term synaptic plasticity, and figures d-g show that when dopamine is mixed with sodium ion, potassium ion, calcium ion, and copper ion respectively, it still exhibits long-term synaptic plasticity, indicating that these metal cations do not inhibit the long-term synaptic plasticity mediated by dopamine and cannot adjust and convert the synaptic plasticity behavior of the electrochemical transistor.

[0071] Example 5: The rest is the same as Example 1, except that:

[0072] The composition and concentration of the gate dielectric are changed, and the pulse response of the organic electrochemical transistor prepared by different gate dielectrics is tested. Hydrochloric acid is used as a hydrogen ion donor.

[0073] According to the theory of dopamine-mediated gate-regulated synaptic plasticity, dopamine is electrochemically oxidized at the gate interface to form hydrogen ions, which de-dope the channel. In order to verify whether iron ions can inhibit the de-doping effect of hydrogen ions on the channel, hydrogen ions or hydrogen ions and iron ions are used as gate dielectric, and the pulse response is characterized. The results are shown in Figure 7 Figure 7 Figures a and b in the middle are the pulse response of 1 mM hydrogen ions as gate dielectric; figure c is the pulse response of 2 mM hydrogen ions and 0.1 mM trivalent iron ions mixed as gate dielectric; and figure d is the pulse response of 2 mM hydrogen ions as gate dielectric. As shown in Figure 7 Figures a and b, 1 mM hydrogen ions mediate the long-term plasticity of the synapse, similar to dopamine; as shown in Figure 7 Figure d, 2 mM hydrogen ions exhibit a larger peak and a longer current decay time. As shown in Figure 7 ​​As shown in Fig. 5C, iron ions and hydrogen ions jointly mediate long-term synaptic plasticity, which is contrary to dopamine and iron ions jointly mediating short-term synaptic plasticity, indicating that iron ions cannot inhibit the de-doping of hydrogen ions to the channel, and iron ions play a role in regulating synaptic plasticity by combining with dopamine to inhibit hydrogen ions generated by dopamine from entering the channel.

Claims

1. Use of a gate dielectric in the manufacture of an organic electrochemical transistor, characterized in that, The gate medium comprises an aqueous solution containing iron ions with a final concentration of 0-5 mM and dopamine or a salt thereof with a final concentration of 0.1-1 mM, and the final concentration of the iron ions is not 0; The long-term synaptic plasticity and short-term synaptic plasticity of the organic electrochemical transistor are controlled by adjusting the relative levels of the iron ion concentration and the dopamine concentration.

2. Use according to claim 1, characterized in that, The iron ion is Fe 3+ .

3. Use according to claim 1, characterized in that, The preparation method of the gate medium comprises the following steps: The trivalent iron salt and the dopamine hydrochloride are dissolved in water to obtain the gate medium.

4. Use according to claim 3, characterized in that, The trivalent iron salt is selected from at least one of ferric chloride, ferric sulfate, ferric nitrate and ferric citrate.

5. Use according to claim 3, characterized in that, The molar ratio of the trivalent iron salt to the dopamine hydrochloride is 1-10:1-10.

6. Use according to claim 1, characterized in that, The method comprises the following steps: (1) vacuum evaporation is performed on a substrate film to prepare an electrode pattern of gold material, the electrode pattern comprising a drain, a source and a gate which do not contact each other, and a channel region is left between the ends of the drain and the source; (2) an intermediate device is obtained by filling the channel region with an organic semiconductor material, and the intermediate device is subjected to annealing treatment to obtain a device to be packaged; (3) a packaging groove is arranged on the device to be packaged, and the gate medium is injected into the packaging groove, the packaging groove being used for packaging the gate medium on the gate and the channel region to obtain an organic electrochemical transistor.

7. Use according to claim 6, characterized in that, In step (1), the method of vacuum evaporation on the substrate film is as follows: a double-sided coated pre-coated PET film is fixed under a mask plate, and gold particles are placed in an evaporation boat; a molecular pump is started under vacuum conditions, and the electrode pattern of gold material is deposited on the surface of the PET film at a deposition rate of 0.3-0.7 nm / min until the thickness of the electrode pattern reaches 40-60 nm, and then the molecular pump is turned off and inert gas is injected again after cooling.

8. Use according to claim 6, characterized in that, In step (1), the aspect ratio of the channel region is 25-40; in step (2), the organic semiconductor material is PEDOT:PSS, and the annealing treatment is performed by heating to 120-140 °C for 20-40 min; in step (3), the material of the packaging groove is polydimethylsiloxane.

9. An organic electrochemical transistor, characterized in that The substrate film is provided with a planar electrode pattern comprising a drain, a source and a gate which do not contact each other, a channel region is left between the ends of the drain and the source, the channel region is filled with PEDOT:PSS, and a gate medium is packaged between the gate and the channel region, the gate medium comprising an aqueous solution containing iron ions with a final concentration of 0-5 mM and dopamine or a salt thereof with a final concentration of 0.1-1 mM, and the final concentration of the iron ions is not 0.

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