Multifunctional memristor based on P3HT / TiO2 heterojunction and its fabrication method

Abstract

This invention provides a multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method. The memristor includes a substrate and a top electrode arranged sequentially from bottom to top, and also includes a titanium dioxide thin film and a P3HT thin film (i.e., a poly(3-hexylthiophene) thin film). The titanium dioxide thin film and the P3HT thin film are disposed between the substrate and the top electrode, and the titanium dioxide thin film is disposed on the surface of the substrate. This multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method have advantages such as excellent memory storage effect, enhanced fast response capability, and enhanced environmental adaptability, and low power consumption, which can significantly reduce production costs and improve production efficiency.

Description

Technical Field

[0001] This invention relates to a multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method, belonging to the field of memristor technology. Background Technology

[0002] Memristors are the fourth fundamental circuit element after resistors, capacitors, and inductors. They are non-volatile components with a "memory" property, meaning their resistance can change based on the magnitude and direction of historical current, and they retain their state even after the current is interrupted. This characteristic gives memristors unique advantages in simulating biological neural networks, developing novel memory types, and realizing more efficient computational models. However, current memristors suffer from the following problems:

[0003] 1. Non-volatile storage requirements: Current computer storage technologies such as DRAM and flash memory face problems such as high power consumption, volatility and long response time.

[0004] 2. Low power consumption and high efficiency computing requirements: With the popularization of mobile devices and embedded systems, how to reduce power consumption while ensuring performance has become a major technical challenge.

[0005] 3. Neuromorphic computing and neural network applications: With the development of artificial intelligence (AI) technology, neuromorphic computing and neural network simulation have become research hotspots.

[0006] 4. Demand for Flexible Electronic Devices: With the continuous advancement of flexible electronics technology, products such as smart wearable devices and wearable medical devices have placed higher demands on flexible, thin, and high-performance electronic components.

[0007] 5. Large-scale integrated storage problem: In modern computing systems, improving storage density and integration is an ongoing challenge. Summary of the Invention

[0008] The purpose of this invention is to provide a multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method to solve the problems of volatility, high power consumption and long response time in the prior art.

[0009] The technical solution of this invention is:

[0010] A multifunctional memristor based on a P3HT / TiO2 heterojunction includes a substrate and a top electrode arranged sequentially from bottom to top, and also includes a titanium dioxide thin film and a P3HT thin film, i.e., a poly(3-hexylthiophene) thin film. The titanium dioxide thin film and the P3HT thin film are disposed between the substrate and the top electrode, and the titanium dioxide thin film is disposed on the surface of the substrate.

[0011] Furthermore, the top electrode is made of aluminum.

[0012] Furthermore, the substrate is made of indium tin oxide (ITO), glass, or a flexible material.

[0013] A method for fabricating a multifunctional memristor based on a P3HT / TiO2 heterojunction as described in any of the above claims includes the following steps:

[0014] S1. Substrate treatment: Clean the substrate surface with ultrasonic cleaning equipment to remove dust and impurities, and then treat the substrate surface with oxygen plasma.

[0015] S2. Preparation of titanium dioxide film (TiO2 film): Tetrabutyl titanate is dissolved in pure ethanol to obtain solution A. Concentrated sulfuric acid is mixed with pure ethanol to obtain solution B. Solution A is added to solution B to obtain solution C. Solution C is uniformly coated on the substrate surface to obtain titanium dioxide film.

[0016] Preparation of S3 and P3HT films, i.e., poly(3-hexylthiophene) films: After preparing the P3HT solution, the P3HT solution is uniformly coated on the surface of the titanium dioxide film to obtain the P3HT film.

[0017] S4. Top electrode deposition: After depositing a metal electrode on top of the P3HT thin film by vacuum evaporation, a multifunctional memristor based on the P3HT / TiO2 heterojunction is obtained.

[0018] Further, step S3 specifically involves,

[0019] S31, P3HT solution preparation: P3HT is dissolved in chloroform to obtain a P3HT solution with a concentration of 5 mg / ml;

[0020] S32. Spin coating method: Before spin coating, indium tin oxide (ITO) is irradiated under ultraviolet light for 15 minutes. P3HT solution is dropped onto indium tin oxide (ITO), and P3HT solution is evenly coated on the surface of titanium dioxide film using a spin coater at a speed of 3000 rpm for 30 seconds.

[0021] S33. Heat treatment: After heat treatment annealing on the coated P3HT film, the P3HT film is obtained.

[0022] Furthermore, in step S33, the annealing temperature is 120°C and the time is 30 minutes.

[0023] Further, step S2 specifically involves,

[0024] S21. Solution preparation: Dissolve 15 ml of tetrabutyl titanate in 60 ml of pure ethanol and name it solution A. Mix 3 ml of concentrated sulfuric acid and 15 ml of pure ethanol and name it solution B. Then slowly add solution A to solution B and stir for 1 h to obtain solution C.

[0025] S22, Spin coating method: Add solution C to the substrate and use a spin coater to evenly coat solution C on the substrate surface at a speed of 3000 rpm for 30 seconds;

[0026] S23. Heat treatment: After heat treatment annealing on the film, a titanium dioxide film is obtained.

[0027] Furthermore, in step S23, the annealing temperature is 100°C and the time is 15 minutes.

[0028] The beneficial effects of this invention are:

[0029] I. This multifunctional memristor based on P3HT / TiO2 heterojunction and its fabrication method have excellent memory storage performance and low power consumption. It can achieve different conduction states by controlling the electric field, has a good memory effect, can retain data after power failure, reduce energy consumption, and can maintain the memory state without the need for a continuous power supply. It meets the requirements of non-volatile memory and is suitable for devices used to store data and information.

[0030] Second, this invention features enhanced rapid response capabilities, exhibiting outstanding performance in response speed and completing state switching within nanoseconds. This makes it widely applicable in fields such as high-speed information processing and analog computing.

[0031] III. This multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method exhibit enhanced environmental adaptability. Combining the material properties of P3HT and TiO2, the memristor can operate under varying temperature and humidity conditions, demonstrating strong environmental adaptability. Therefore, the P3HT / TiO2-based memristor can operate stably in various complex environments, making it particularly suitable for intelligent devices and sensor systems in harsh environments.

[0032] IV. This multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method offer enhanced manufacturing flexibility. It can be manufactured using simple solution processing and low-temperature fabrication techniques, significantly reducing production costs and improving production efficiency. Furthermore, the material's solubility allows for large-scale production on flexible substrates, exhibiting excellent scalability.

[0033] V. This multifunctional memristor based on P3HT / TiO2 heterojunction and its fabrication method can be applied to adaptive learning and neural networks. Since the P3HT / TiO2 memristor has an adjustable conductance state, it is suitable for simulating the activity of neurons. Therefore, it can be widely used in the fields of neuromorphic computing and neural networks. It can be used as a basic unit of artificial neural networks to imitate the learning and memory mechanism of biological neural synapses. Attached Figure Description

[0034] Figure 1 This is a schematic diagram of the structure of a multifunctional memristor based on a P3HT / TiO2 heterojunction according to an embodiment of the present invention;

[0035] Figure 2 This is a schematic diagram showing the electrical performance test results of a multifunctional memristor based on a P3HT / TiO2 heterojunction in an embodiment.

[0036] Figure 3 The following are schematic diagrams of the synaptic performance test results of a multifunctional memristor based on a P3HT / TiO2 heterojunction in the embodiment. (a) is a schematic diagram of the test results with 8V as the pulse voltage and 1V as the read voltage, with a pulse interval of 5 seconds. (b) is a schematic diagram of the test results with 8V as the pulse voltage and 1V as the read voltage, with a pulse interval of 10 seconds. (c) is a schematic diagram of the test results with 8V as the pulse voltage and 1V as the read voltage, with a pulse interval of 20 seconds. Detailed Implementation

[0037] The preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0038] The embodiment provides a multifunctional memristor based on a P3HT / TiO2 heterojunction, such as Figure 1 It includes a substrate and a top electrode arranged sequentially from bottom to top, and also includes a titanium dioxide film and a P3HT film, i.e., a poly(3-hexylthiophene) film. The titanium dioxide film and the P3HT film are disposed between the substrate and the top electrode, and the titanium dioxide film is disposed on the surface of the substrate.

[0039] This multifunctional memristor based on a P3HT / TiO2 heterojunction has the following advantages: 1) The P3HT / TiO2 memristor combines the advantages of the organic semiconductor P3HT and the oxide material TiO2, exhibiting low operating voltage and low power consumption. This makes it highly promising for low-power storage and computing applications, particularly suitable for integration into wearable devices and IoT devices. 2) Flexibility and bendability: Due to the good flexibility of P3HT as an organic material, memristors based on the P3HT / TiO2 structure can be fabricated on flexible substrates, providing excellent technical support for future flexible electronic devices (such as flexible displays, smart tags, etc.). 3) Adjustable memristor effect: The conductivity and memory effect of the P3HT / TiO2 memristor depend on the history of the applied voltage, and different conductance states (such as high-resistance and low-resistance states) can be achieved through simple voltage adjustment. This characteristic makes it very suitable for non-volatile storage, analog computing, and neural networks. 4) Adjustable and easily processed materials: As an organic semiconductor, the electronic properties of P3HT can be controlled by altering parameters such as molecular structure and film thickness. Furthermore, TiO2, as an inorganic oxide material, exhibits good stability, and its combination with P3HT can optimize performance. This combination provides more possibilities for device performance tuning. 5) High stability and long-term durability: The chemical stability and good environmental resistance of TiO2 enable P3HT / TiO2-based memristors to maintain good performance under various operating environments, possessing a long service life and suitable for devices operating for extended periods.

[0040] This multifunctional memristor based on a P3HT / TiO2 heterojunction uses an aluminum electrode as its top electrode. The substrate can be made of indium tin oxide (ITO), glass, or a flexible material.

[0041] This multifunctional memristor based on the P3HT / TiO2 heterojunction, as a non-volatile storage device, can retain data after power failure, reducing energy consumption, and can operate at low voltage and low power consumption. This will drive more energy-efficient and high-performance storage systems suitable for applications such as smart hardware, IoT devices, and embedded systems.

[0042] A method for fabricating a multifunctional memristor based on a P3HT / TiO2 heterojunction as described in any of the above claims includes the following steps:

[0043] S1. Substrate treatment: Clean the substrate surface with ultrasonic cleaning equipment to remove dust and impurities, and then treat the substrate surface with oxygen plasma.

[0044] S2. Preparation of titanium dioxide film (TiO2 film): Tetrabutyl titanate is dissolved in pure ethanol to obtain solution A. Concentrated sulfuric acid is mixed with pure ethanol to obtain solution B. Solution A is added to solution B to obtain solution C. Solution C is uniformly coated on the substrate surface to obtain titanium dioxide film.

[0045] S21. Solution preparation: Dissolve 15 ml of tetrabutyl titanate in 60 ml of pure ethanol and name it solution A. Mix 3 ml of concentrated sulfuric acid and 15 ml of pure ethanol and name it solution B. Then slowly add solution A to solution B and stir for 1 h to obtain solution C.

[0046] S22, Spin coating method: Add solution C to the substrate and use a spin coater to evenly coat solution C on the substrate surface at a speed of 3000 rpm for 30 seconds;

[0047] S23. Heat treatment: Heat treatment annealing is performed on the film at a temperature of 100°C for 15 minutes to obtain a titanium dioxide film.

[0048] Preparation of S3 and P3HT films, i.e., poly(3-hexylthiophene) films: After preparing the P3HT solution, the P3HT solution is uniformly coated on the substrate surface to obtain the P3HT film.

[0049] S31, P3HT solution preparation: P3HT is dissolved in chloroform to obtain a P3HT solution with a concentration of 5 mg / ml;

[0050] S32. Spin coating method: Before spin coating, indium tin oxide (ITO) is irradiated under ultraviolet light for 15 minutes. P3HT solution is dropped onto indium tin oxide (ITO), and P3HT solution is evenly coated on the surface of titanium dioxide film using a spin coater at a speed of 3000 rpm for 30 seconds.

[0051] S33. Heat treatment: The coated P3HT film is subjected to heat treatment annealing at a temperature of 120°C for 30 minutes to obtain the P3HT film.

[0052] S4. Top electrode deposition: After depositing a metal electrode on top of the P3HT thin film by vacuum evaporation, a multifunctional memristor based on the P3HT / TiO2 heterojunction is obtained.

[0053] This paper presents a multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method. P3HT and TiO2 are combined in thin film form, with the TiO2 film acting as the dielectric layer and the P3HT film as the conductive layer, ensuring sufficient flexibility and low power consumption. Poly(3-hexylthiophene)P3HT possesses excellent conductivity and adaptability; its molecular structure effectively responds to changes in electric field, resulting in tunable conductivity, which is the core of the memristor effect. Titanium dioxide (TiO2) exhibits excellent electrical insulation properties and good memristor performance at low voltages. The P3HT / TiO2 memristor provides low-power memory storage and, through integration with traditional electronic components (such as CPUs and memory), promotes the development of low-power computing systems. Its high efficiency and low power consumption make it widely applicable in portable devices, smart sensors, and wireless communication systems.

[0054] This multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method, through the combination of P3HT and TiO2, improves memristor performance, reduces cost, and enhances stability, exhibiting durability and stability under multiple cycles, especially under different voltage and frequency conditions. Power consumption is relatively low, and can be further reduced by optimizing the material ratio and thickness. By controlling material properties and structural design, its response time and operating voltage range can be optimized, thereby achieving high-speed operation. Different crystalline phases of TiO2, such as anatase and rutile, can affect the performance of the memristor. The electronic behavior of the P3HT / TiO2 interface is the core of the memristor effect; by adjusting the interface quality, the high efficiency and controllability of the memristor can be achieved.

[0055] This paper describes a multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method. The memristor effect principle is as follows: by applying a voltage, the carrier density of the P3HT film and the defect density of the TiO2 film change, thereby causing a change in the conductance of the memristor. This process is reversible and can realize memory storage function.

[0056] This paper presents a multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method. P3HT, as an organic semiconductor material, combined with the excellent electrical insulation properties of TiO2, gives the P3HT / TiO2 memristor good flexibility and bendability, enabling its application on flexible substrates. Such memristors not only possess high efficiency but also meet the specific needs of wearable devices, flexible displays, and other similar devices. The electrical properties of P3HT are largely influenced by its molecular structure and crystallinity; therefore, the heat treatment and solution concentration of the thin film need precise control. Environmental factors such as temperature and humidity during the fabrication process can affect the quality of the P3HT and TiO2 thin films, thus requiring operation under controlled conditions.

[0057] This multifunctional memristor based on a P3HT / TiO2 heterojunction and its fabrication method enables high-density storage cells with small size and flexible integration. By optimizing material design and manufacturing processes, it can be massively integrated into memory chips to meet the demands of modern big data processing and cloud computing, improving the capacity, speed, and stability of storage systems. The P3HT / TiO2 memristor can mimic the learning and memory mechanisms of biological synapses, acting as a fundamental unit in simulated neural networks. Through its tunable conductance, the memristor can be used as a storage cell and provides data transmission and processing at the "synaptic" level in neural networks. Its applications in neuromorphic computing, deep learning accelerators, and other fields will effectively improve the training and inference efficiency of AI models.

[0058] The electrical performance test results of this multifunctional memristor based on the P3HT / TiO2 heterojunction are as follows: Figure 2 , Figure 2 In the diagram, the 10 lines from bottom to top represent the 10th cycles of the voltage progression from 0V to 6V and back to 0V. Figure 2 It can be seen that when the voltage scan goes from positive to negative, the current does not return to the initial point along the same path. This is because the device's state (high resistance state or low resistance state) remembers the previous voltage history. The memristor effect is confirmed by current-voltage (IV) characteristic testing. The reversible memory characteristic is verified by observing the resistance change of the memristor by applying different voltages or currents.

[0059] The synaptic performance of this multifunctional memristor based on the P3HT / TiO2 heterojunction was tested, including the results of double pulse enhancement (ppF). Figure 3 . Figure 3 In (a), (b), and (c), the blue lines represent two identical pulses given at different intervals, and the red lines represent the current following the pulse. The time interval between the two pulses gradually increases. Figure 3 It can be seen that the superior performance of this multifunctional memristor based on P3HT / TiO2 heterojunction in dual-pulse enhancement is reflected in its high responsiveness to dual-pulse signals, making it highly competitive and promising in the fields of storage and information processing.

[0060] The above embodiments are merely illustrative of the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made to the technical solution based on the technical concept proposed in this invention shall fall within the scope of protection of this invention.

Claims

1. A multifunctional memristor based on a P3HT / TiO2 heterojunction, comprising a substrate and a top electrode arranged sequentially from bottom to top, characterized in that: It also includes titanium dioxide film and P3HT film, i.e., poly(3-hexylthiophene) film, which are disposed between the substrate and the top electrode, and the titanium dioxide film is disposed on the surface of the substrate.

2. The multifunctional memristor based on a P3HT / TiO2 heterojunction as described in claim 1, characterized in that: The top electrode is made of aluminum.

3. The multifunctional memristor based on a P3HT / TiO2 heterojunction as described in claim 1, characterized in that: The substrate is made of indium tin oxide (ITO), glass, or a flexible material.

4. A method for fabricating a multifunctional memristor based on a P3HT / TiO2 heterojunction as described in any one of claims 1-3, characterized in that: Includes the following steps, S1. Substrate treatment: Clean the substrate surface with ultrasonic cleaning equipment to remove dust and impurities, and then treat the substrate surface with oxygen plasma. S2. Preparation of titanium dioxide film (TiO2 film): Tetrabutyl titanate is dissolved in pure ethanol to obtain solution A. Concentrated sulfuric acid is mixed with pure ethanol to obtain solution B. Solution A is added to solution B to obtain solution C. Solution C is uniformly coated on the substrate surface to obtain titanium dioxide film. Preparation of S3 and P3HT films, i.e., poly(3-hexylthiophene) films: After preparing the P3HT solution, the P3HT solution is uniformly coated on the surface of the titanium dioxide film to obtain the P3HT film. S4. Top electrode deposition: After depositing a metal electrode on top of the P3HT thin film by vacuum evaporation, a multifunctional memristor based on the P3HT / TiO2 heterojunction is obtained.

5. The method for fabricating a multifunctional memristor based on a P3HT / TiO2 heterojunction as described in claim 4, characterized in that: Step S3, specifically, S31, P3HT solution preparation: P3HT is dissolved in chloroform to obtain a P3HT solution with a concentration of 5 mg / ml; S32. Spin coating method: Before spin coating, indium tin oxide (ITO) is irradiated under ultraviolet light for 15 minutes. P3HT solution is dropped onto indium tin oxide (ITO), and P3HT solution is evenly coated on the surface of titanium dioxide film using a spin coater at a speed of 3000 rpm for 30 seconds. S33. Heat treatment: After heat treatment annealing on the coated P3HT film, the P3HT film is obtained.

6. The method for fabricating a multifunctional memristor based on a P3HT / TiO2 heterojunction as described in claim 5, characterized in that: In step S33, the annealing temperature is 120°C and the time is 30 minutes.

7. The method for fabricating a multifunctional memristor based on a P3HT / TiO2 heterojunction as described in any one of claims 4-6, characterized in that: Step S2, specifically, S21. Solution preparation: Dissolve 15 ml of tetrabutyl titanate in 60 ml of pure ethanol and name it solution A. Mix 3 ml of concentrated sulfuric acid and 15 ml of pure ethanol and name it solution B. Then slowly add solution A to solution B and stir for 1 h to obtain solution C. S22, Spin coating method: Add solution C to the substrate and use a spin coater to evenly coat solution C on the substrate surface at a speed of 3000 rpm for 30 seconds; S23. Heat treatment: After heat treatment annealing on the film, a titanium dioxide film is obtained.

8. The method for fabricating a multifunctional memristor based on a P3HT / TiO2 heterojunction as described in claim 7, characterized in that: In step S23, the annealing temperature is 100°C and the time is 15 minutes.

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