Plasma processing apparatus and plasma processing method

Abstract

The plasma processing apparatus comprises a chamber, a substrate supporting part in the chamber, a plasma generating part, a bias power supply, an edge ring, a lifting mechanism, a switcher and a control part. The bias power supply and / or the high-frequency power supply of the plasma generating part is electrically coupled with the base of the substrate supporting part. The lifting mechanism includes a conductive ring, a rod, an actuator, and a connecting member, and is configured so as to be able to move the edge ring in a state supported by the conductive ring up and down. The connection member provides an electrical connection between the conductive ring and the base. The switcher is configured to be capable of switching between a first state in which the edge ring and the base are electrically coupled to each other and a second state in which the edge ring and the base are electrically separated from each other. The control unit is configured so as to be able to control the switcher.

Description

Technical Field

[0001] Exemplary embodiments of the present invention relate to a plasma processing apparatus and a substrate processing system. Background Art

[0002] A plasma processing apparatus is used in plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate support. The substrate support is disposed in the chamber. The substrate support includes a susceptor and an electrostatic chuck. A bias power source is connected to the susceptor, which generates an electrical bias for attracting ions from the plasma to the substrate. The electrostatic chuck is configured to be able to support the substrate and an edge ring surrounding the substrate. Patent Document 1 below discloses a plasma processing apparatus configured to be able to move the edge ring up and down.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2020-113753 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] The present invention provides a technique for suppressing the consumption of the edge ring.

[0008] Technical Solution for Solving the Technical Problem

[0009] In an exemplary embodiment, a plasma processing apparatus is disclosed. The plasma processing apparatus includes a chamber, a substrate support, a plasma generation unit, a bias power source, an edge ring, a lifting mechanism, a switch, and a control unit. The substrate support is disposed in the chamber. The substrate support includes a susceptor and an electrostatic chuck on the susceptor. The plasma generation unit includes a high-frequency power source and is configured to be able to generate plasma in the chamber. The bias power source is configured to be able to generate an electrical bias for attracting ions from the plasma to the substrate on the substrate support. The bias power source and / or the high-frequency power source is electrically coupled to the susceptor. The edge ring has conductivity and is disposed so as to surround the substrate on the substrate support. The lifting mechanism is configured to be able to move the edge ring up and down. The lifting mechanism includes a conductive ring, a rod, an actuator, and a connecting member. The conductive ring can be electrically coupled to the edge ring in a state of supporting the edge ring placed thereon. The rod extends in the vertical direction below the conductive ring. The actuator is configured to be able to move the edge ring up and down via the rod and the conductive ring. The connecting member provides an electrical connection between the conductive ring and the susceptor. The switch is configured to be able to switch between a first state in which the edge ring and the susceptor are electrically coupled to each other and a second state in which the edge ring and the susceptor are electrically separated from each other. The control unit is configured to be able to control the switching between the first state and the second state performed by the switch.

[0010] Advantageous Effects of the Invention

[0011] According to an exemplary embodiment, consumption of the edge ring can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a diagram for explaining a structural example of a plasma processing system.

[0013] Figure 2 is a diagram for explaining a structural example of a capacitively coupled plasma processing apparatus.

[0014] Figure 3 is a diagram showing a substrate support portion and a lifting mechanism according to an exemplary embodiment.

[0015] Figure 4 is a diagram showing a substrate support portion and a lifting mechanism according to another exemplary embodiment.

[0016] Figure 5 is a diagram showing a switch and a sensor of a plasma processing apparatus according to an exemplary embodiment.

[0017] Figure 6 is a diagram showing a substrate processing system according to an exemplary embodiment.

[0018] Figure 7 is a diagram showing a substrate support portion and a lifting mechanism according to still another exemplary embodiment.

[0019] Figure 8 is a flowchart showing a plasma processing method according to an exemplary embodiment.

[0020] Figure 9 is a flowchart showing a plasma processing method according to another exemplary embodiment.

[0021] Figure 10 is a flowchart showing a plasma processing method according to still another exemplary embodiment.

[0022] Figure 11 is a block diagram of a processing circuit for performing the operations described in this specification on a computer.

[0023] Figure 12 is a diagram showing a substrate support portion and a lifting mechanism according to an exemplary embodiment.

[0024] Figure 13 is a diagram showing a substrate support portion and a lifting mechanism according to still another exemplary embodiment.

[0025] Figure 14 is a diagram showing a substrate support portion and a lifting mechanism according to still another exemplary embodiment.

[0026] Figure 15 FIG. is a view showing a substrate support portion and a lifting mechanism according to another exemplary embodiment.

[0027] Figure 16 FIG. is a view showing a substrate support portion and a lifting mechanism according to another exemplary embodiment.

[0028] Figure 17 FIG. is a view showing a substrate support portion and a lifting mechanism according to another exemplary embodiment.

[0029] Figure 18 FIG. is a view showing a substrate support portion and a lifting mechanism according to another exemplary embodiment.

[0030] Figure 19 FIG. is a view showing a substrate support portion and a lifting mechanism according to another exemplary embodiment.

[0031] Figure 20 FIG. is a view showing a substrate support portion and a lifting mechanism according to another exemplary embodiment. DETAILED DESCRIPTION

[0032] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, the same or corresponding parts are denoted by the same reference numerals in the respective drawings.

[0033] Figure 1 FIG. is a view for explaining a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generation portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply portion 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support portion 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0034] The plasma generation unit 12 is configured to generate plasma from at least one process gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), surface wave plasma (SWP), or the like. In addition, various types of plasma generation units including an AC (alternating current) plasma generation unit and a DC (direct current) plasma generation unit may be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Accordingly, the AC signal includes an RF (radio frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0035] The control unit 2 is configured to process computer-executable commands for causing the plasma processing apparatus 1 to perform various steps described in the present invention. The control unit 2 may be configured to be able to control each element of the plasma processing apparatus 1 to perform various steps described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented by a computer 2a, for example. The processing unit 2a1 may be configured to be able to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be pre-stored in the storage unit 2a2 or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1 from the storage unit 2a2. The medium may be various storage media readable by the computer 2a or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0036] Hereinafter, a structural example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described. Figure 2 FIG. is for explaining a structural example of a capacitively coupled plasma processing apparatus.

[0037] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to be able to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a showerhead 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support unit 11. In one embodiment, the showerhead 13 forms at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support unit 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0038] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. The wafer is an example of the substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 in a top view. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 so as to surround the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0039] In one embodiment, the main body portion 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Alternatively, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 can be disposed on the annular electrostatic chuck or the annular insulating member, or on both the electrostatic chuck 1111 and the annular insulating member. Additionally, at least one RF / DC electrode coupled to the RF power supply 31 and / or the DC power supply 32 described later may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or the DC signal described later are supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Further, the conductive member of the base 1110 and the at least one RF / DC electrode may function as a plurality of lower electrodes. Additionally, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0040] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0041] In addition, the substrate support portion 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply a heat transfer gas to the gap between the back surface of the substrate W and the central region 111a.

[0042] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the showerhead 13 includes at least one upper electrode. In addition, the gas introduction unit may include, in addition to the showerhead 13, one or more side gas injectors (SGIs) installed in one or more openings formed in the side wall 10a.

[0043] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the corresponding gas source 21 to the showerhead 13 via the corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Moreover, the gas supply unit 20 may also include at least one flow modulation device for modulating the flow rate of at least one process gas or pulsing it.

[0044] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thereby, a plasma is formed from at least one process gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W to attract the ion component in the formed plasma to the substrate W.

[0045] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to be able to generate a generation source RF signal (generation source RF electric power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a may also be configured to be able to generate a plurality of generation source RF signals having different frequencies. The generated one or more generation source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0046] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to be able to generate a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the generation source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generation source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may also be configured to be able to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Further, in various embodiments, at least one of the generation source RF signal and the bias RF signal may be pulsed.

[0047] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is connected to at least one lower electrode and is configured to be able to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is connected to at least one upper electrode and is configured to be able to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0048] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a pulse waveform of rectangle, trapezoid, triangle, or a combination thereof. In one embodiment, a waveform generation unit for generating a sequence of voltage pulses from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Thus, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. In the case where the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Additionally, the sequence of voltage pulses may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one cycle. Furthermore, the first and second DC generation units 32a, 32b may be provided together with the RF power supply 31, or the first DC generation unit 32a may be provided in place of the second RF generation unit 31b.

[0049] The exhaust system 40 can be connected, for example, to the gas discharge port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s can be regulated by the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0050] Hereinafter, with reference to Figure 3 。 Figure 3 FIG. is a diagram showing a substrate support portion and a lifting mechanism according to an exemplary embodiment. Figure 3 The illustrated substrate support portion 11 and the lifting mechanism 50 can be employed in the plasma processing apparatus 1.

[0051] As described above, the substrate support portion 11 is configured to be able to support the edge ring UR (upper edge ring). The edge ring UR is a part of the ring assembly 112. The edge ring UR is arranged so as to surround the substrate W on the substrate support portion 11. The edge ring UR is formed of a conductive material such as silicon, silicon carbide, or tungsten.

[0052] As described above, the substrate support portion 11 includes a base 1110 and an electrostatic chuck 1111. The base 1110 is a conductive member or includes a conductive member therein. The base 1110 (or its conductive member) is electrically coupled to the high-frequency power supply and / or at least one bias power supply such as. The high-frequency power supply is the first RF generation unit 31a, which constitutes the plasma generation unit 12. The at least one bias power supply includes the second RF generation unit 31b and / or the first DC generation unit 32a. The at least one bias power supply is configured to be able to generate an electrical bias to attract ions from the plasma to the substrate W on the substrate support portion 11. The electrical bias includes the above-described bias RF signal and / or a sequence of voltage pulses.

[0053] The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a first portion P1 and a second portion P2. The first portion P1 has a substrate support surface (i.e., the central region 111a) as its upper surface. The first portion P1 and the substrate support surface have a substantially circular planar shape. The central axis of the first portion P1 and the substrate support surface is the central axis of the substrate support portion 11. The first portion P1 includes the above-described electrostatic electrode 1111b. When a DC voltage is applied to the electrostatic electrode 1111b from a DC power source, an electrostatic attraction force is generated between the first portion P1 and the substrate W. The first portion P1 uses the generated electrostatic attraction force to hold the substrate W.

[0054] The second portion P2 extends circumferentially around the central axis of the substrate support portion 11 so as to surround the first portion P1. The second portion P2 has an annular support surface (i.e., the annular region 111b) as its upper surface. The second portion P2 and the annular support surface have a substantially annular planar shape. The second portion P2 may include at least one electrostatic electrode. The second portion P2 may include the electrode BEa and the electrode BEb as at least one electrostatic electrode. The electrode BEa and the electrode BEb constitute a bipolar electrode. A voltage is applied to the electrode BEa and the electrode BEb from at least one power source to generate a potential difference therebetween. Thus, an electrostatic attraction force is generated between the edge ring UR and the second portion P2. The second portion P2 uses the generated electrostatic attraction force to hold the edge ring UR.

[0055] In one embodiment, the annular support surface extends at a position lower than the substrate support surface. In this case, the first portion P1 includes a side wall surface 111s that extends between the substrate support surface and the annular support surface. In this case, the edge ring LR (lower edge ring) can be disposed on the annular support surface along the side wall surface 111s. The edge ring LR constitutes a part of the ring assembly 112. The edge ring LR can be formed of a conductive material such as silicon, silicon carbide, or tungsten. Alternatively, the edge ring LR can also be formed of an insulating material such as quartz. In this case, the edge ring UR is disposed on the edge ring LR. The annular support surface and the side wall surface 111s are protected by the edge ring LR.

[0056] As Figure 3 shown, the substrate support portion 11 may further include a cover ring CR and an insulating member IM. The insulating member IM is formed of an insulating material such as quartz and has a substantially cylindrical shape. The insulating member IM extends circumferentially around the central axis of the substrate support portion 11 so as to surround the base 1110 and the electrostatic chuck 1111. The cover ring CR has a substantially disc shape and is disposed on the insulating member IM so as to surround the edge ring UR.

[0057] The plasma processing apparatus 1 further includes a lifting mechanism 50. The lifting mechanism 50 includes a conductive ring 51, at least one rod 52, an actuator 53, and at least one connecting member 54.

[0058] The conductive ring 51 is formed of a metal such as aluminum or a conductive material and has a substantially ring shape. The conductive ring 51 extends circumferentially around the central axis of the substrate support portion 11 inside the insulating member IM so as to surround the base 1110 and the electrostatic chuck 1111. The conductive ring 51 is configured to be electrically coupled (e.g., conduct) to the edge ring UR in a state where the edge ring UR placed thereon is supported. In addition, the region of the conductive ring 51 exposed on the surface may be covered with a film resistant to plasma. This film may be formed of a material such as an alumina film or yttrium fluoride, or may be formed by a method such as anodizing or spraying.

[0059] At least one rod 52 extends vertically below the conductive ring 51. At least one rod 52 may have insulation. In this case, it is possible to suppress the inflow of an electrical bias into the actuator 53 via at least one rod 52. In one embodiment, the lifting mechanism 50 may include a plurality of rods 52 as at least one rod 52. The plurality of rods 52 are arranged circumferentially around the central axis of the substrate support portion 11. The plurality of rods 52 may be arranged at equal intervals in the circumferential direction.

[0060] The actuator 53 is disposed below at least one rod 52 and is connected to at least one rod 52. The actuator 53 is configured to be able to move the edge ring up and down via at least one rod 52 and the conductive ring 51. The actuator 53 may be, for example, a pneumatic or hydraulic cylinder or an electric motor.

[0061] At least one connecting member 54 provides an electrical connection between the conductive ring 51 and the base 1110 (or its conductive component). At least one connecting member 54 is configured to maintain this electrical connection as the conductive ring 51 moves. At least one connecting member 54 may be configured to be deformable as the conductive ring 51 moves. In addition, in the case where the lifting mechanism 50 includes a plurality of rods 52, a plurality of connecting members 54 may be included as at least one connecting member 54.

[0062] In Figure 3 In the example shown, at least one connecting member 54 includes an upper portion 54a, a deformable portion 54b, and a lower portion 54c. The upper portion 54a, the deformable portion 54b, and the lower portion 54c are formed of a conductive material. The upper portion 54a is disposed directly below the conductive ring 51 and is fixed to the conductive ring 51. The upper portion 54a is electrically connected to the conductive ring 51. The lower portion 54c is disposed below the upper portion 54a and is fixed to the base 1110. The lower portion 54c is electrically connected to the base 1110.

[0063] The deformable portion 54b extends between the upper portion 54a and the lower portion 54c. The upper end of the deformable portion 54b is fixed to the upper portion 54a, and the lower end of the deformable portion 54b is fixed to the lower portion 54c. The deformable portion 54b is electrically connected to the upper portion 54a and the lower portion 54c. The deformable portion 54b can be a bellows as Figure 3 shown.

[0064] At least one rod 52 penetrates the lower portion 54c, passes through the deformable portion 54b, and extends to the area directly below the upper portion 54a. When at least one rod 52 is moved upward by the actuator 53, the edge ring UR moves upward via the upper portion 54a and the conductive ring 51. In order to reduce the difference between the upper end position of the plasma sheath on the substrate W and the upper end position of the plasma sheath on the edge ring UR, the edge ring UR moves upward as its thickness decreases (see Figure 12 ). In the plasma processing apparatus 1, even if the edge ring UR moves upward from the electrostatic chuck 1111, the connection member 54 can maintain the first state (e.g., conductive state) in which the base 1110 and the edge ring UR are electrically coupled to each other. In the plasma processing apparatus 1, the edge ring UR does not become an electrically floating state, so the edge ring UR can function to reduce the difference between the upper end position of the plasma sheath on the substrate W and the upper end position of the plasma sheath on the edge ring UR.

[0065] In addition, the connection member 54 can also be a cylindrical member having a plurality of slits formed in its side wall surface so as to be elastically deformable in its longitudinal direction. For example, the connection member 54 can be a "Flexus" flexible body.

[0066] As described above, the lifting mechanism 50 can electrically couple (e.g., conduct) the conductive ring 51 and the edge ring UR on the conductive ring 51 while the edge ring UR is supported by the conductive ring 51. That is, the lifting mechanism 50 can form the first state (e.g., conductive state) in which the edge ring UR and the base 1110 are electrically coupled to each other. In addition, in the Figure 3 shown state, the conductive ring 51 is separated downward from the edge ring UR, but in the state where the conductive ring 51 is in contact with the edge ring UR placed thereon, the first state (e.g., conductive state) in which the edge ring UR and the base 1110 are electrically coupled to each other can be formed.

[0067] In addition, the plasma processing apparatus 1 further includes a switch 80 (see Figure 5 ). The switch 80 is configured to be able to switch between the first state (e.g., conductive state) in which the edge ring UR and the base 1110 are electrically coupled to each other and the second state (e.g., non-conductive state) in which the edge ring UR and the base 1110 are electrically separated from each other. The switching of the switch 80 between the first state and the second state can be controlled by the control unit 2.

[0068] In Figure 3In the illustrated embodiment, the switch 80 is the lifting mechanism 50. Specifically, the lifting mechanism 50 can lower the conductive ring 51 downward via the rod 52 by means of the actuator 53, separating the conductive ring 51 from the edge ring UR. That is, in the lifting mechanism 50, by separating the conductive ring 51 from the edge ring UR, the second state can be formed.

[0069] Hereinafter, with reference to Figure 4 . Figure 4 FIG. is a diagram showing a substrate support portion and a lifting mechanism according to another exemplary embodiment. Figure 4 The illustrated substrate support portion 11 and the lifting mechanism 50 can be employed in the plasma processing apparatus 1. Hereinafter, regarding Figure 4 the embodiment of Figure 3 will be described from the perspective of differences from the

[0070] As Figure 4 shown, the lifting mechanism 50 may have a deformed portion 54b as a contact band instead of the bellows. The upper end of the deformed portion 54b may be fixed to the conductive ring 51. The lower end of the deformed portion 54b may be fixed to the base 1110. Figure 4 The illustrated deformed portion 54b has flexibility in the vertical direction. As Figure 4 shown, the deformed portion 54b may have a substantially arc-shaped bulge outward. In this case, the insulating member IM may provide a recess in which a part of the deformed portion 54b can be disposed.

[0071] In the plasma processing apparatus 1 including the Figure 4 illustrated lifting mechanism 50, a switch 80 is further included. The switch 80 may be a part of the lifting mechanism 50. The switch 80 includes a switching element and is connected between the connecting member 54 and the conductive ring 51 or between the connecting member 54 and the base 1110. When the switching element of the switch 80 is in the ON state (closed state), the above-described first state can be formed. When the switching element of the switch 80 is in the OFF state (open state), the above-described second state can be formed. The switching of the first state and the second state by the switch 80 (i.e., the switching element) can be controlled by the control unit 2.

[0072] Hereinafter, with reference to Figure 6 . Figure 6 FIG. is a diagram showing a substrate processing system according to an exemplary embodiment. Figure 6The substrate processing system PS shown includes a transfer module TM, a plurality of processing modules PM1 to PM7 (a plurality of substrate processing modules), and a control unit MC. The substrate processing system PS may further include loading platforms LPa to LPd, containers FUa to FUd, a loading module LM, an aligner AN, a loading lock module LL1, a loading lock module LL2, and a ring storage module RSM (ring storage). Additionally, the number of loading platforms, the number of containers, and the number of loading lock modules in the substrate processing system PS can be any number equal to or greater than one. Additionally, the number of processing modules in the substrate processing system PS can be any number equal to or greater than two.

[0073] The loading platforms LPa to LPd are arranged along one edge of the loading module LM. The containers FUa to FUd are respectively mounted on the loading platforms LPa to LPd. Each of the containers FUa to FUd is, for example, a container called a FOUP (Front Opening Unified Pod). Each of the containers FUa to FUd is configured to be able to accommodate the substrate W therein.

[0074] The loading module LM has a transfer chamber. The pressure in the transfer chamber of the loading module LM is set to atmospheric pressure. The loading module LM has a transfer robot LMR. The transfer robot LMR is controlled by the control unit MC. The transfer robot LMR is configured to be able to transfer the substrate W via the transfer chamber of the loading module LM. The transfer robot LMR can transfer the substrate W between each of the containers FUa to Fud and the aligner AN, between the aligner AN and each of the loading lock modules LL1, LL2, and between each of the loading lock modules LL1, LL2 and each of the containers FUa to Fud. The aligner AN is connected to the loading module LM. The aligner AN is configured to be able to perform position adjustment (alignment) of the substrate W.

[0075] The loading lock module LL1 and the loading lock module LL2 are each connected between the transfer chamber of the loading module LM and the transfer chamber TC of the transfer module TM. The loading lock module LL1 and the loading lock module LL2 each provide a pre-pressure reduction chamber. A gate is provided between the pre-pressure reduction chamber of each of the loading lock module LL1 and the loading lock module LL2 and the transfer chamber of the loading module LM. Additionally, a gate is provided between the pre-pressure reduction chamber of each of the loading lock module LL1 and the loading lock module LL2 and the transfer chamber TC of the transfer module TM.

[0076] The transfer module TM has a transfer chamber TC (vacuum transfer chamber) and a transfer robot TR. The transfer chamber TC is configured to be able to decompress its internal space. The transfer robot TR includes a picker TP (end effector). The transfer robot TR may include at least two pickers TP. In the illustrated example, the transfer robot TR includes two pickers TP. One of the two pickers TP is disposed on the upper side with respect to the other. The transfer robot TR is configured to be able to transfer the substrate W disposed on any one of the two pickers TP via the transfer chamber TC. The transfer robot TR is controlled by the control unit MC.

[0077] Position detection sensors S11, S12 may be provided in the transfer module TM. The position detection sensors S11, S12 are provided on the transfer path for transferring the substrate W and the edge ring from the transfer module TM to the processing module PM1. The position detection sensors S11, S12 are used to correct the positions of the substrate W and the edge ring transferred from the transfer module TM to the processing module PM1. The position detection sensors S11, S12 are, for example, provided near the gate that separates the transfer module TM from the processing module PM1. The position detection sensors S11, S12 are arranged, for example, such that the distance between them is smaller than the outer diameter of the substrate W and smaller than the inner diameter of the edge ring. Similarly to the position detection sensors S11, S12, position detection sensors S21, S22, S31, S32, S41, S42, S51, S52, S61, S62, S71, S72 may also be provided in the transfer module TM. The position detection sensors S21, S22 are provided on the transfer path for transferring the substrate W and the edge ring from the transfer module TM to the processing module PM2. The position detection sensors S31, S32 are provided on the transfer path for transferring the substrate W and the edge ring from the transfer module TM to the processing module PM3. The position detection sensors S41, S42 are provided on the transfer path for transferring the substrate W and the edge ring from the transfer module TM to the processing module PM4. The position detection sensors S51, S52 are provided on the transfer path for transferring the substrate W and the edge ring from the transfer module TM to the processing module PM5. The position detection sensors S61, S62 are provided on the transfer path for transferring the substrate W and the edge ring from the transfer module TM to the processing module PM6. The position detection sensors S71, S72 are provided on the transfer path for transferring the substrate W and the edge ring from the transfer module TM to the processing module PM7.

[0078] In one embodiment, the transfer robot TR is configured to transfer an edge ring for a substrate support portion of any one of the plurality of processing modules PM1 to PM7. The edge ring is an edge ring UR or a ring set including the edge ring UR and the edge ring LR. The edge ring is transferred while being disposed on any one of the two pickers TP. Each picker TP has a sensor TS. The sensor TS is an optical sensor and is configured to be able to measure the position of a ring component such as an edge ring on the substrate support portion.

[0079] Each of the processing modules PM1 to PM7 is a device configured to perform dedicated substrate processing and has a processing chamber (substrate processing chamber). A gate is provided between the processing chamber and the transfer chamber TC. At least one of the processing modules PM1 to PM7 is a plasma processing device 1.

[0080] The storage module RSM (ring storage) is connected to the transfer chamber TC via a gate. The storage module RSM has a chamber and can store a plurality of edge rings therein.

[0081] The control unit MC is configured to be able to control each part of the substrate processing system PS. The control unit MC may be a computer including a processor, a storage device, an input device, a display device, etc. The control unit MC executes a control program stored in the storage device and controls each part of the substrate processing system PS based on the recipe data stored in the storage device.

[0082] Hereinafter, with reference to Figure 7 . Figure 7 FIG. is a diagram showing a substrate support portion and a lifting mechanism according to another exemplary embodiment. Figure 7 The illustrated substrate support portion 11 and the lifting mechanism 50 can be adopted in the plasma processing device 1. The Figure 7 The plasma processing device 1 including the illustrated substrate support portion 11 and the lifting mechanism 50 can be used as a processing module of the substrate processing system PS. Hereinafter, regarding Figure 7 the embodiment of Figure 3 will be described from the perspective of differences from

[0083] In Figure 7 the embodiment of

[0084] In Figure 7In the embodiment, the lifting mechanism 60 can be used to lift the edge ring UR upward from the substrate support portion 11. The lifting mechanism 60 includes a plurality of lifting pins 61 and an actuator 62. The plurality of lifting pins 61 are respectively inserted into a plurality of through holes of the substrate support portion 11. The actuator 62 is connected to the plurality of lifting pins 61 and is configured to be able to move the plurality of lifting pins 61 up and down.

[0085] In a state where the upper ends of the plurality of lifting pins 61 are in contact with the edge ring UR, when the plurality of lifting pins 61 are moved upward by the actuator 62, the edge ring UR is lifted upward from the substrate support portion 11. In this state, the transfer robot TR moves the picker TP below the edge ring UR. Then, the plurality of lifting pins 61 move downward, whereby the edge ring UR is transferred to the picker TP. After that, the edge ring UR is transported by the transfer robot TR to the storage module RSM.

[0086] Then, the replacement edge ring UR is transported from the storage module RSM into the chamber 10 by the transfer robot TR. Next, the actuator 62 moves the plurality of lifting pins 61 upward, whereby the edge ring UR is transferred to the plurality of lifting pins 61. Then, the picker TP moves outside the chamber 10, and the plurality of lifting pins 61 move downward. Thus, the replacement edge ring UR is disposed on the substrate support portion 11.

[0087] In the Figure 7 In the plasma processing apparatus 1 including the lifting mechanism 50 shown, the switching device 80 includes the lifting mechanism 60. In the lifting mechanism 60, all the lifting pins 61 are formed of an insulating material. When the lifting mechanism 60 positions all the lifting pins 61 such that the edge ring UR is supported on the conductive ring 51 and is electrically coupled to the conductive ring 51, the above-described first state can be formed. When the lifting mechanism 60 lifts the edge ring UR upward from the conductive ring 51 and separates it from the conductive ring 51, the above-described second state can be formed.

[0088] In addition, the plasma processing apparatus 1 may include another lifting mechanism instead of or in addition to the lifting mechanism 60. The other lifting mechanism can be configured to be able to lift a ring group including both the edge ring UR and the edge ring LR upward from the substrate support portion 11 and / or the conductive ring 51.

[0089] With the switching device 80 described above, the above-described first state and second state can be switched as needed. When the second state is formed, the electrical bias and / or the generated source RF signal are not supplied from the base 1110 to the edge ring UR via the conductive ring 51. With this switching device 80, when the second state is formed, it is possible to suppress the consumption of the edge ring UR caused by chemical species from the plasma due to plasma processing in the chamber 10.

[0090] Here, refer to Figure 5 . Figure 5 is a diagram showing a switch and sensors of a plasma processing apparatus according to an exemplary embodiment. As Figure 5 shown, the plasma processing apparatus 1 of various exemplary embodiments may further include at least one sensor 90. The at least one sensor 90 is configured to be able to measure the amount of deposits on the edge ring UR.

[0091] The sensor 90 may include at least one selected from the sensor 91, the sensor 92, and the sensor 93. The sensor 91 is an emission spectroscopic analyzer configured to be able to analyze the emission of the plasma in the chamber 10. By using the sensor 91, different emission intensities can be measured at a prescribed wavelength in the case where there are deposits on the edge ring UR and in the case where the deposits are removed from the edge ring UR. Therefore, by using the sensor 91, the amount of deposits on the edge ring UR can be estimated based on the measured emission intensity.

[0092] The sensor 92 is an optical sensor including a light source such as a laser, and is configured to be able to detect the thickness of the deposits on the edge ring UR. The sensor 92 is disposed, for example, at the top of the chamber 10. By using the sensor 92, the amount of deposits on the edge ring UR can be estimated based on the measured thickness of the deposits.

[0093] The sensor 93 is an impedance measurer connected to the susceptor 1110. The impedance on the susceptor 1110 side as seen from the sensor 93 changes with the amount of deposits on the edge ring UR.

[0094] By using the sensor 93, the amount of deposits on the edge ring UR can be estimated based on the measured impedance.

[0095] Hereinafter, refer to Figures 8 - 10 , and a plasma processing method of various exemplary embodiments will be described. Figures 8 - 10 Each is a flowchart showing a plasma processing method according to an exemplary embodiment. Figures 8 - 10 The plasma processing method shown in each can be executed using the plasma processing apparatus 1. In the plasma processing method, each part of the plasma processing apparatus 1 can be controlled by the control unit 2.

[0096] Refer to Figure 8 . Figure 8 The plasma processing method (hereinafter referred to as "method MT") shown starts from step STa. In step STa, the control unit 2 reads the recipe.

[0097] In the next step STJ, the control unit 2 determines whether the read recipe is a product recipe. The product recipe is a recipe for performing plasma processing on the substrate W on the substrate support portion 11. When it is determined in step STJ that the read recipe is a product recipe, the control unit 2 controls the switch 80 in step STb to form the above-described first state. On the other hand, when it is determined in step STJ that the read recipe is not a product recipe, the control unit 2 controls the switch 80 in step STc to form the above-described second state.

[0098] In the next step STd, the control unit 2 executes the plasma processing specified in the read recipe. When the read recipe is a product recipe, while maintaining the above-described first state, the control unit 2 controls each part of the plasma processing apparatus 1 in step STd to perform plasma processing on the substrate W on the substrate support portion 11, for example, plasma etching. On the other hand, when the read recipe is not a product recipe, while maintaining the above-described second state, the control unit 2 controls each part of the plasma processing apparatus 1 in step STd to perform plasma cleaning of the chamber 10.

[0099] Refer to Figure 9 . Figure 9 The plasma processing method shown (hereinafter referred to as "method MTA") starts from step STa in the same manner as method MT. In the next step STAd, the control unit 2 controls each part of the plasma processing apparatus 1 to start executing the plasma processing specified in the read recipe. This plasma processing can be plasma cleaning of the chamber 10. In one example, this plasma processing is plasma cleaning for removing carbon-containing deposits on the edge ring UR. The gas used in this plasma processing includes a gas capable of removing deposits, such as an oxygen-containing gas. In addition, at the start of the plasma processing, the control unit 2 can control the switch 80 to form the above-described first state.

[0100] In the next step STAJ, the control unit 2 determines whether electrical coupling between the edge ring UR and the base 1110 is required. Specifically, the control unit 2 determines in step STAJ that electrical coupling between the edge ring UR and the base 1110 is required when the amount of deposits on the edge ring UR determined by the measurement of at least one sensor 90 is more than the threshold. On the other hand, the control unit 2 determines in step STAJ that electrical coupling between the edge ring UR and the base 1110 is not required when the amount of deposits on the edge ring UR determined by the measurement of at least one sensor 90 is below the threshold.

[0101] In addition, when the light emission intensity of the plasma at a specified wavelength (e.g., the light emission wavelength based on carbon) measured by the sensor 91 is below the threshold value, it can be determined in step STAJ that the amount of deposits on the edge ring UR is below the threshold value. Alternatively, when the thickness of the deposits on the edge ring UR measured by the sensor 92 is below the threshold value, it can be determined in step STAJ that the amount of deposits on the edge ring UR is below the threshold value. Alternatively, when the impedance measured by the sensor 93 is below the threshold value, it can be determined in step STAJ that the amount of deposits on the edge ring UR is below the threshold value.

[0102] When it is determined in step STAJ that electrical coupling between the edge ring UR and the base 1110 is required, the control unit 2 controls the switch 80 in step STb to form the above-mentioned first state. On the other hand, when it is determined in step STAJ that electrical coupling between the edge ring UR and the base 1110 is not required, the control unit 2 controls the switch 80 in step STc to form the above-mentioned second state.

[0103] In the next step STAJb, the control unit 2 determines whether to end the process. When it is determined in step STAJb that the process is not ended, the plasma process started in step STAd is continued, and the process from step STAJ is repeated. On the other hand, when it is determined in step STAJb that the process is ended, the control unit 2 ends the method MTA.

[0104] Refer to Figure 10 。 Figure 10 The plasma processing method (hereinafter referred to as "method MTB") shown starts from step STa in the same manner as method MT. In method MTB, the determination in step STJ is performed in the same manner as method MT. In addition, the edge ring UR is disposed on the substrate support portion 11 and the conductive ring 51 at the start of method MTB or immediately after step STJ ends.

[0105] When it is determined in step STJ that the read program is a product program, the control unit 2 controls the switch 80 in step STb1 to form the above-mentioned first state.

[0106] In the next step STBd1, the control unit 2 controls each part of the plasma processing apparatus 1 to execute the first step specified in the read program. In the first step, as the plasma processing specified in the program, it includes plasma etching for forming a concave portion on the substrate W on the substrate support portion 11. The gas used in this plasma etching may include fluorocarbons and / or hydrofluorocarbons.

[0107] In the next step STc1, the control unit 2 controls the switch 80 to form the above-mentioned second state.

[0108] In the next step STBd2, each part of the plasma processing apparatus 1 is controlled to perform the ashing process specified in the read recipe. In the ashing process, deposits are removed from the substrate W on the substrate support portion 11 by chemical species in the plasma generated from the ashing gas. The ashing gas may contain an oxygen-containing gas.

[0109] In the next step STb2, the control unit 2 controls the switch 80 to form the above-described first state.

[0110] In the next step STBd3, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the second step specified in the read recipe. In the second step, as the plasma processing specified in the recipe, plasma etching for increasing the depth of the concave portion of the substrate W on the substrate support portion 11 is included. The gas used in this plasma etching may contain a fluorocarbon and / or a hydrofluorocarbon in the same manner as the gas used in the first step.

[0111] In addition, when it is determined in the above step STJ that the read recipe is not a product recipe, the control unit 2 controls the switch 80 to form the above-described second state in step STc3.

[0112] In the next step STBd4, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing specified in the read recipe, that is, the first plasma cleaning of the chamber 10. The gas used in step STBd4 may contain an oxygen-containing gas.

[0113] In the next step STb3, the control unit 2 controls the switch 80 to form the above-described first state.

[0114] In the next step STBd5, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing specified in the read recipe, that is, the second plasma cleaning of the chamber 10. The gas used in step STBd5 may contain an oxygen-containing gas.

[0115] In the next step STf, the edge ring on the substrate support portion 11 is replaced with an edge ring transported from the storage module RSM using the transfer robot TR.

[0116] In the next step STc4, the control unit 2 controls the switch 80 to form the above-described second state.

[0117] In the next step STBd6, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing specified in the read recipe, that is, the seasoning process of the chamber 10. In step STBd6, plasma is generated from the seasoning gas in the chamber 10.

[0118] Hereinafter, refer to Figure 8 , Figure 13 and Figure 14 . Figure 13 and Figure 14 Each is a diagram showing a substrate support part and a lifting mechanism representing another exemplary embodiment. Figure 13 and Figure 14 The substrate support part 11 and the lifting mechanism 50 shown can be adopted in the plasma processing apparatus 1. Figure 13 and Figure 14 The structures in the embodiment of Figure 4 are substantially the same as the corresponding structures in the embodiment of Figure 13 and Figure 14 The plasma processing apparatus 1 including the substrate support part 11 and the lifting mechanism 50 shown can be used in the method MT.

[0119] As described above, when the plasma processing specified by the recipe is the plasma processing of the substrate W on the substrate support part 11, in step STb, the control unit 2 controls the switch 80 to form the above-described first state. In this case, in step STd, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing of the substrate W. While maintaining the first state formed in step STb and the state where the edge ring UR is lifted upward from the edge ring LR (refer to Figure 13 ), when the plasma processing of the substrate W is performed in step STd, deposits are formed on the lower surface of the edge ring UR and / or the upper surface (ring support surface or the upper surface of the edge ring LR) facing the lower surface of the edge ring UR. The deposits can contain components contained in the processing gas used in the plasma processing of step STd. The deposits can be formed of a carbon-containing material. Or, the deposits can be formed of a metal-containing material.

[0120] In addition, as described above, when the plasma processing specified by the recipe is the plasma cleaning of the chamber 10, in step STb, the control unit 2 controls the switch 80 to form the above-described second state. In this case, in step STd, the control unit 2 controls each part of the plasma processing apparatus 1 to perform plasma cleaning. In addition, the control unit 2 controls the lifting mechanism 50 to adjust the position of the edge ring UR in the height direction during plasma cleaning (refer to Figure 14)Set to a position higher than the position in the height direction of the edge ring UR when performing the above-described plasma treatment on the substrate W (refer to Figure 13 ). Thus, active species from the plasma are supplied to the space between the lower surface of the edge ring UR and the upper surface (ring support surface or the upper surface of the edge ring LR) facing the lower surface of the edge ring UR, and removal of the above-described deposits can be promoted.

[0121] When the deposit is formed of a carbon-containing material, in the plasma cleaning in step STd, a source RF signal from the first RF generation unit 31a can be supplied to generate plasma from the cleaning gas. In this case, the level of the bias signal from the bias power supply, that is, the power level of the bias RF signal or the level of the voltage pulse (potential difference with respect to the reference potential (e.g., 0V) of the voltage pulse) can be set to zero or a low level. Additionally, when the deposit is formed of a carbon-containing material, in the plasma cleaning in step STd, an oxygen-containing gas can also be supplied into the chamber 10 as the cleaning gas to generate plasma.

[0122] When the deposit is formed of a metal-containing material, in the plasma cleaning in step STd, a source RF signal from the first RF generation unit 31a can be supplied to generate plasma from the cleaning gas. Additionally, in this case, the level of the bias signal from the bias power supply, that is, the power level of the bias RF signal or the level of the voltage pulse (potential difference with respect to the reference potential (e.g., 0V) of the voltage pulse) can be set to a high level capable of removing the deposit by ion sputtering.

[0123] Hereinafter, refer to Figure 15 . Figure 15 is a diagram showing a substrate support portion and a lifting mechanism of another exemplary embodiment. Figure 15 The lifting mechanism 50 shown can replace Figure 13 and Figure 14 The lifting mechanism 50 shown is used in the plasma processing apparatus 1. In the plasma processing apparatus 1 including Figure 15 The lifting mechanism 50 shown can also be the same as the plasma processing apparatus 1 including Figure 13 and Figure 14 The lifting mechanism 50 shown performs the method MT. Hereinafter, regarding Figure 15 The lifting mechanism 50 shown is described from the perspective of differences from Figure 13 and Figure 14 The lifting mechanism 50 shown.

[0124] As Figure 15As shown, the edge ring UR includes an inner peripheral portion URi and an outer peripheral portion URo. The inner peripheral portion URi extends inside the outer peripheral portion URo and is disposed above the second portion P2. The outer peripheral portion URo is located on the conductive ring 51 while being supported by the conductive ring 51. The outer peripheral portion URo has a length in the vertical direction set as follows: when plasma cleaning is performed in step STd, the conductive ring 51 can be prevented from being exposed to the space above the substrate support portion 11. That is, the outer peripheral portion URo has a length in the vertical direction set as follows: when plasma cleaning is performed in step STd, the outer peripheral portion URo is located between the space above the substrate support portion 11 and the conductive ring 51. Thereby, the conductive ring 51 can be protected from the influence of the plasma generated in step STd.

[0125] Hereinafter, referring to Figure 16 . Figure 16 FIG. is a diagram showing a substrate support portion and a lifting mechanism according to another exemplary embodiment. Figure 16 The lifting mechanism 50 shown can replace Figure 13 and Figure 14 The lifting mechanism 50 shown is adopted in the plasma processing apparatus 1. In the plasma processing apparatus 1 including Figure 16 The lifting mechanism 50 shown, it is also possible to execute the method MT in the same manner as in the plasma processing apparatus 1 including Figure 13 and Figure 14 The lifting mechanism 50 shown. Hereinafter, regarding Figure 16 The lifting mechanism 50 shown, an explanation will be given from the perspective of differences from Figure 13 and Figure 14 The lifting mechanism 50 shown.

[0126] Figure 16 The lifting mechanism 50 shown further includes a coating film 51c. The coating film 51c covers the surface of the conductive ring 51 to protect the conductive ring 51 from the influence of the plasma. The coating film 51c is formed of a material having plasma resistance (for example, yttrium oxide). For the electrical coupling (capacitive coupling) between the edge ring UR and the base 1110, the coating film 51c formed between the edge ring UR and the conductive ring 51, that is, the coating film 51c formed on the upper surface of the conductive ring 51, may have a capacitance of 10,000 pF or more.

[0127] Hereinafter, referring to Figure 17 and Figure 18 . Figure 17 and Figure 18 Each of FIGS. is a diagram showing a substrate support portion and a lifting mechanism according to another exemplary embodiment. Figure 17 and Figure 18 The substrate support portion 11 and the lifting mechanism 50 shown can replace Figure 13 and Figure 14The substrate support portion 11 and the lifting mechanism 50 shown are employed in the plasma processing apparatus 1. In the plasma processing apparatus 1 including Figure 17 and Figure 18 the substrate support portion 11 and the lifting mechanism 50 shown, it is also possible to execute the method MT in the same manner as in the plasma processing apparatus 1 including Figure 13 and Figure 14 the substrate support portion 11 and the lifting mechanism 50 shown. Hereinafter, regarding Figure 17 and Figure 18 the substrate support portion 11 and the lifting mechanism 50 shown, an explanation will be given from the perspective of the differences from Figure 13 and Figure 14 the substrate support portion 11 and the lifting mechanism 50 shown.

[0128] As Figure 17 and Figure 18 shown, the lifting mechanism 50 further includes a protection member 51p. The protection member 51p has an annular shape extending in the circumferential direction around the central axis of the substrate support portion 11. The protection member 51p has conductivity and is mounted on the conductive ring 51 in such a way as to protect the conductive ring 51 from the influence of plasma. The protection member 51p is formed of a material having plasma resistance. The protection member 51p may be formed of the same material as that of the edge ring UR. In this embodiment, the edge ring UR is electrically coupled to the conductive ring 51 via the protection member 51p in a state of being supported by the conductive ring 51.

[0129] In Figure 17 and Figure 18 the embodiment shown, the plasma processing apparatus 1 further includes a lifting mechanism 70. The lifting mechanism 70 includes a plurality of lifting pins 71 and an actuator 72. Figure 17 The plurality of rods 52 of the lifting mechanism 50 shown and Figure 18 the plurality of lifting pins 71 shown may be alternately arranged in the circumferential direction with respect to the central axis of the substrate support portion 11. The plurality of rods 52 and the plurality of lifting pins 71 may be arranged at equal intervals.

[0130] The plurality of lifting pins 71 can be inserted into a plurality of through holes penetrating the conductive ring 51 and the protection member 51p in the vertical direction. The actuator 72 is configured to be able to move the plurality of lifting pins 71 up and down under the control of the control unit 2. In a state where the lifting mechanism 70 retracts the plurality of lifting pins 71 to a lower position so that the upper ends of the plurality of lifting pins 71 do not contact the edge ring UR, the above-described first state can be formed. In addition, in a state where the lifting mechanism 70 lifts the edge ring UR upward from the protection member 51p using the plurality of lifting pins 71, the above-described second state can be formed. Therefore, the lifting mechanism 70 constitutes a switch 80.

[0131] As described above, when the plasma processing specified by the program is the plasma processing of the substrate W on the substrate support portion 11, in step STb, the control unit 2 controls the lifting mechanism 70, i.e., the switch 80, to form the above-described first state. In this case, in step STd, the control unit 2 controls each part of the plasma processing apparatus 1 to perform the plasma processing of the substrate W.

[0132] In addition, when the plasma processing specified by the program is the plasma cleaning of the chamber 10, in step STb, the control unit 2 controls the lifting mechanism 70, i.e., the switch 80, to form the above-described second state. In this case, the control unit 2 controls each part of the plasma processing apparatus 1 to perform plasma cleaning in step STd. In addition, the control unit 2 controls the lifting mechanism 70 to set the height-direction position of the edge ring UR during plasma cleaning to a position higher than the height-direction position of the edge ring UR during the above-described plasma processing of the substrate W. Thereby, the active species from the plasma are supplied to the space between the lower surface of the edge ring UR and the upper surface (the ring support surface or the upper surface of the edge ring LR) opposite to the lower surface of the edge ring UR, and the removal of the above-described deposits can be promoted.

[0133] Hereinafter, with reference to Figure 19 and Figure 20 . Figure 19 and Figure 20 are diagrams respectively showing a substrate support portion and a lifting mechanism of another exemplary embodiment. Figure 19 and Figure 20 The substrate support portion 11 and the lifting mechanism 50 shown can replace Figure 13 and Figure 14 The substrate support portion 11 and the lifting mechanism 50 shown are adopted in the plasma processing apparatus 1. In the plasma processing apparatus 1 including Figure 19 and Figure 20 The substrate support portion 11 and the lifting mechanism 50 shown can also perform the method MT in the same manner as the plasma processing apparatus 1 including Figure 13 and Figure 14 The substrate support portion 11 and the lifting mechanism 50 shown. Hereinafter, regarding Figure 19 and Figure 20 The substrate support portion 11 and the lifting mechanism 50 shown will be described from the perspective of the differences from Figure 13 and Figure 14 The substrate support portion 11 and the lifting mechanism 50 shown.

[0134] As Figure 19 and Figure 20 shown, the electrostatic chuck 1111 has an electrode BEc built therein in the second portion P2 below the edge ring UR. The electrode BEc is electrically connected to the base 1110 via the switching element 81.

[0135] When the control unit 2 executes plasma processing of the substrate W in step STd, the control unit 2 can set the state of the switching element 81 to the OFF state (open state) to cut off the electrical connection between the electrode BEc and the susceptor 1110. When the control unit 2 executes plasma processing of the substrate W in step STd, the control unit 2 controls the switch 80 (switching element) to form the above-described first state.

[0136] When the control unit 2 executes plasma cleaning of the chamber 10 in step STd, the control unit 2 controls the elevating mechanism 50 to set the position of the edge ring UR in the height direction to a position higher than the position of the edge ring UR in the height direction when performing the above-described plasma processing of the substrate W. In addition, when the control unit 2 executes plasma cleaning of the chamber 10 in step STd, the control unit 2 sets the state of the switching element 81 to the ON state (closed state) to establish the electrical connection between the electrode BEc and the susceptor 1110. In addition, when the control unit 2 executes plasma cleaning of the chamber 10 in step STd, the control unit 2 controls the switch 80 (switching element) to form the above-described second state and grounds the edge ring UR via the conductive ring 51. As a result, a high-frequency electric field corresponding to the generated source RF signal and / or the bias RF signal is formed between the electrode BEc and the edge ring UR. As a result, in the space between the lower surface of the edge ring UR and the upper surface (ring support surface or the upper surface of the edge ring LR) facing the lower surface of the edge ring UR, plasma is generated from the cleaning gas. Thus, plasma for removing deposits can be locally formed in this space. In addition, Figure 19 and Figure 20 the structure of the illustrated embodiment can also be employed in Figure 15 and Figure 16 each of the embodiments.

[0137] An example of a processing circuit will be described below, which can be used as one or more processing circuits in the plasma processing apparatus 1 such as the control unit 2 and / or one or more processing circuits in the substrate processing system PS such as the control unit MC. Figure 11 It is a block diagram of a processing circuit for implementing the operations described in this specification on a computer. Figure 11A processing circuit 130 that can be used to control a control process on any computer is shown. The description or block in the flowchart represents a module, segment or part of a code that contains one or more executable commands for implementing a specific logical function or step of the process. As can be understood by those skilled in the art, other embodiments with functions that can be executed in an order different from the order shown or recorded, such as approximately simultaneously or in the opposite order, are included in the scope of the exemplary embodiments of the present invention according to the relevant functions. The various elements, features and processes described in this specification can be used independently of each other or combined in various ways. Any conceivable combination and partial combination may be included in the scope of the present invention.

[0138] exist Figure 11 In the embodiment, the processing circuit 130 includes a CPU 1200 that implements one or more control processes described above / hereinafter. Processing data and commands can be stored in a memory 1202. These processing data and commands can be stored in a storage medium disk 1204 such as a hard disk drive (HDD: Hard Disk Drive) or a removable storage medium, or can be stored remotely. In addition, the present invention described in the technical solution claimed for protection is not limited by the form of a computer-readable medium that stores instructions for the processing in the present invention. For example, these commands can be stored in a CD, DVD, flash memory, RAM, ROM, PROM, EPROM, EEPROM, hard disk, or any other information processing device such as a server and / or computer with which the processing circuit 130 can communicate.

[0139] Furthermore, the present invention described in the technical solution claimed for protection may be provided as a utility application, a background daemon, a constituent element of an operating system, or a combination thereof, and may be executed in conjunction with CPU1200 and operating systems known to those skilled in the art, such as Microsoft Windows (registered trademark), UNIX (registered trademark), Solaris (registered trademark), LINUX (registered trademark), Apple MAC-OS, etc.

[0140] The hardware elements constituting the processing circuit 130 can be implemented using various circuit elements. Furthermore, each function of the above-mentioned embodiment can be implemented using a circuit including one or more processing circuits. Figure 11 As shown, the processing circuit includes a specifically programmed processing device, such as a processing device (CPU) 1200. The processing circuit also includes circuits for specific purposes (ASIC: application specific integrated circuit, dedicated integrated circuit), existing circuit components configured to implement the described functions, and other devices.

[0141] existFigure 11 Among them, the processing circuit 130 includes the CPU 1200 that implements the above processing. The processing circuit 130 can also be a general-purpose computer or a specific dedicated machine. In one embodiment, when the processing device 1200 is programmed to be capable of controlling each part of the plasma processing device 1 such as the gas supply unit 20, the power supply 30, the lifting mechanism 50, and the switch 80, the processing circuit 130 functions as a specific dedicated machine.

[0142] Alternatively, the CPU 1200 can also be implemented on an FPGA, ASIC, PLD, or using discrete logic circuits as can be understood by those skilled in the art. Furthermore, the CPU 1200 can also be implemented as multiple processing devices that cooperate in a manner of executing the commands for processing the present invention in parallel.

[0143] Figure 11 The processing circuit 130 further includes a network controller 1206 for interfacing with the network 1228, such as an Intel Ethernet PRO network interface card of Intel Corporation in the United States. As can be understood, the network 1228 can be a public network such as the Internet, a private network such as a LAN or WAN, or any combination thereof. Additionally, it can also include sub-networks such as PSTN and ISDN. The network 1228 can be a wired network such as Ethernet or a wireless network such as a cellular network including EDGE, 3G, 4G wireless cellular systems. The wireless network can also be Wi-Fi, Bluetooth (registered trademark), or any other known wireless communication method.

[0144] The processing circuit 130 further includes a display device controller 1208 such as a graphics card or a graphics adapter for interfacing with a display device 1210 such as a monitor. The general-purpose I / O interface 1212 interfaces with a keyboard and / or a mouse 1214, and a touch panel 1216 integrated with or separate from the display device 1210. The general-purpose I / O interface is also connected to various peripheral devices 1218 such as a printer and a scanner.

[0145] The storage device controller 1224 is connected to the storage medium disk 1204 via a communication bus 1226 such as ISA, EISA, VESA, or PCI, and all components of the processing circuit 130 are connected to each other. Regarding the general characteristics and functions of the display device 1210, the keyboard and / or the mouse 1214, and the display device controller 1208, the storage device controller 1224, the network controller 1206, the sound controller 1220, and the general-purpose I / O interface 1212, they are regarded as known in this specification for the sake of simplicity, and the description thereof is omitted.

[0146] The exemplary circuit elements described in the present invention can be replaced by other elements and may have a structure different from the examples described in this specification. Furthermore, a circuit configured to implement the features described in this specification can be implemented by a plurality of circuit units (e.g., chips), or these features can also be integrated into a circuit of a single chipset.

[0147] The functions and features described in this specification can also be executed by various components distributed on the system. For example, these system functions can be executed by one or more processing devices, in which case the processing devices are distributed among a plurality of components communicating within a network. As the distributed components, in addition to various human-machine interfaces and communication devices (display monitors, smartphones, tablets, personal information terminals (PDA: Personal Digital Assistant), etc.), it can also include one or more client devices and server devices capable of sharing processing. The network can be a private network such as a LAN or WAN, or a public network such as the Internet. Input to the system can be accepted through direct input by the user or remotely in real time or as batch processing. Furthermore, a part of the embodiment can also be implemented on modules or hardware different from the above. Thus, other embodiments are also included in the claimed technical solution.

[0148] As described above, various exemplary embodiments have been described, but are not limited to the above exemplary embodiments, and various additions, omissions, substitutions, and changes can be made. Additionally, elements from different embodiments can be combined to form other embodiments.

[0149] For example, any one of the above containers FUa to FUd can be used as the storage module RSM.

[0150] From the above description, it can be seen that various embodiments of the present invention have been described for illustrative purposes in this specification, and various changes can be made without departing from the scope and gist of the present invention. Thus, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and gist are represented by the claimed technical solution.

[0151] Description of Reference Numerals

[0152] 1... Plasma processing apparatus, 2... Control unit, 10... Chamber, 11... Substrate support portion, 12... Plasma generation portion, 1110... Base, 1111... Electrostatic chuck, 50... Lifting mechanism, 51... Conductive ring, 52... Rod, 53... Actuator, 54... Connecting member, 80... Switch.

Claims

1. A plasma processing device, characterized in that: include: Chamber; A substrate support portion located in the chamber, comprising a base and an electrostatic chuck on the base; a plasma generating unit including a high frequency power source, configured to generate plasma in the chamber; a bias power supply configured to generate an electrical bias to attract ions from the plasma to the substrate on the substrate support, the bias power supply and / or the high frequency power supply being electrically coupled to the susceptor; an edge ring having electrical conductivity and arranged to surround the substrate on the substrate support; A lifting mechanism configured to move the edge ring up and down, comprising: a conductive ring capable of electrically coupling with the edge ring while supporting the edge ring placed thereon; a rod extending in a vertical direction below the conductive ring; an actuator configured to move the edge ring up and down via the rod and the conductive ring; and a connecting member providing an electrical connection between the conductive ring and the base; a switch configured to switch between a first state in which the edge ring and the base are electrically coupled to each other and a second state in which the edge ring and the base are electrically separated from each other; and The control unit is configured to control switching between the first state and the second state performed by the switch.

2. The plasma processing device according to claim 1, characterized in that: The lifting mechanism is the switch, and is configured to be able to lower the conductive ring by the actuator so that the conductive ring is separated from the edge ring, thereby forming the second state.

3. The plasma processing device according to claim 1, characterized in that: The switch includes a switch element connected between the connection member and the conductive ring or between the connection member and the base.

4. The plasma processing device according to claim 1, characterized in that: The switch includes another lifting mechanism configured to form the second state by lifting the edge ring from the conductive ring.

5. The plasma processing device according to any one of claims 1 to 4, characterized in that: The control unit is composed of: When the plasma processing specified by the recipe is a plasma processing of the substrate on the substrate support, the switch can be controlled to form the first state, In a case where the plasma processing specified by the protocol is plasma cleaning of the chamber, the switch is controlled to form the second state.

6. The plasma processing device according to claim 3, characterized in that: The control unit is composed of: When the plasma processing specified by the recipe is a plasma processing of the substrate on the substrate support, the switch can be controlled to form the first state, in a case where the plasma processing specified by the scheme is plasma cleaning of the chamber, controlling the switch to form the second state, The lifting mechanism is controlled so that the height direction position of the edge ring when the plasma cleaning is performed is set to a position higher than the height direction position of the edge ring when the plasma processing of the substrate is performed.

7. The plasma processing device according to claim 6, characterized in that: The edge ring includes an inner peripheral portion and an outer peripheral portion, wherein the outer peripheral portion is located on the conductive ring when the edge ring is supported by the conductive ring. The outer peripheral portion has a vertical length set such that the conductive ring is not exposed in a space above the substrate support portion when the plasma cleaning is performed.

8. The plasma processing device according to claim 6, characterized in that: The lifting mechanism further comprises a coating, wherein the coating covers the surface of the conductive ring to protect the conductive ring from being affected by ions.

9. The plasma processing device according to any one of claims 6 to 8, characterized in that: The electrostatic chuck has an electrode built into it below the edge ring. The plasma processing apparatus further includes another switching element electrically connected between the susceptor and the electrode, The control unit is composed of: capable of controlling the switch element of the switch to cut off the electrical connection between the conductive ring and the base and grounding the conductive ring when performing the plasma cleaning, While the plasma cleaning is performed, the other switching element is controlled to electrically connect the electrode and the susceptor to each other.

10. The plasma processing device according to claim 4, characterized in that: The lifting mechanism further includes a protective component, which is conductive and mounted on the conductive ring. The control unit is composed of: When the plasma processing specified by the recipe is a plasma processing of the substrate on the substrate support, the switch can be controlled to form the first state, in a case where the plasma processing specified by the scheme is plasma cleaning of the chamber, controlling the switch to form the second state, The other lifting mechanism is controlled to set the height direction position of the edge ring when performing the plasma cleaning to a position higher than the height direction position of the edge ring when performing the plasma processing on the substrate and away from the conductive ring and the protective component upward.

11. The plasma processing device according to claim 10, characterized in that: The protection member is formed of the same material as that of the edge ring.

12. The plasma processing device according to any one of claims 1 to 4, characterized in that: The control unit is composed of: The switch is capable of being placed in the first state, and plasma etching specified by the scheme is performed to form a recess in the substrate on the substrate support portion. Next, the switch is set to the second state, and an ashing process specified by the scheme is performed to remove the deposits on the substrate. After the ashing process, the switch is brought into the first state, and plasma etching specified by the scheme is performed to increase the depth of the recess.

13. The plasma processing device according to any one of claims 1 to 4, characterized in that: The control unit is composed of: The switch can be set to the second state in a state where the edge ring is arranged on the substrate support portion, and a first plasma cleaning of the chamber specified by the scheme can be performed. Next, in a state where the edge ring is disposed on the substrate support portion, the switch is set to the first state, and a second plasma cleaning of the chamber specified by the scheme is performed. Next, after the edge ring on the substrate supporting portion is replaced, the switch is brought into the second state, and an aging process of the chamber specified by the protocol is performed.

14. The plasma processing device according to any one of claims 1 to 4, characterized in that: Also included is a sensor configured to measure an amount of deposits on the edge ring, The control unit is composed of: enabling the switch to form the first state, performing plasma cleaning of the chamber specified by the protocol to remove the deposits, When the amount of the deposit measured by the sensor during the plasma cleaning becomes equal to or less than a threshold value, the switch is controlled to form the second state.

15. A plasma treatment method, characterized in that: The plasma processing method is performed using the plasma processing device according to any one of claims 1 to 4, comprising: The control unit reads the plan step; the step of controlling the switch according to the scheme; and The steps of plasma treatment corresponding to the scheme are performed.

16. The plasma processing method according to claim 15, characterized in that: In the step of controlling the switch: In a case where the plasma processing specified by the scheme is a plasma processing of the substrate on the substrate support, controlling the switch to form the first state, In a case where the plasma processing specified by the scheme is plasma cleaning of the chamber, the switch is controlled to form the second state.

17. The plasma processing method according to claim 16, characterized in that: When the plasma cleaning is performed, the height direction position of the edge ring is set to a position higher than the height direction position of the edge ring when the plasma processing on the substrate is performed.

18. The plasma processing method according to claim 17, characterized in that: When performing the plasma cleaning, the electrical connection between the conductive ring and the base is cut off, and the conductive ring is grounded. When the plasma cleaning is performed, an electrode built into the electrostatic chuck below the edge ring and the susceptor are electrically connected to each other using a switching element.

19. The plasma processing method according to claim 15, characterized in that: In the step of controlling the switch, the switch is placed in the first state. In the step of performing plasma processing, plasma etching specified by the scheme is performed to form a recessed portion on the substrate on the substrate support portion. Next, in the step of controlling the switch, the switch is set to the second state, and in the step of performing plasma treatment, an ashing treatment specified by the scheme is performed to remove deposits on the substrate. After the ashing process, in the step of controlling the switch, the switch is placed in the first state, and in the step of performing the plasma process, plasma etching specified by the scheme is performed to increase the depth of the recessed portion.

20. The plasma processing method according to claim 15, characterized in that: In a state where the edge ring is disposed on the substrate support, in the step of controlling the switch, the switch is set to the second state, and in the step of performing plasma processing, a first plasma cleaning of the chamber specified by the scheme is performed, Next, in a state where the edge ring is disposed on the substrate support, in the step of controlling the switch, the switch is set to the first state, and in the step of performing plasma processing, a second plasma cleaning of the chamber specified by the scheme is performed. Next, after the edge ring on the substrate supporting portion is replaced, the switch is placed in the second state in the step of controlling the switch, and the chamber aging process specified by the protocol is performed in the step of performing plasma processing.

21. The plasma processing method according to claim 15, characterized in that: The plasma processing apparatus further includes a sensor configured to measure an amount of deposits on the edge ring. In the step of controlling the switch, the switch is placed in the first state. In the step of performing plasma treatment, plasma cleaning of the chamber specified by the scheme is performed to remove the deposits. When the amount of the deposit measured by the sensor during the plasma cleaning becomes equal to or less than a threshold value, in the step of controlling the switch, the switch is controlled to form the second state.

Images