Apparatuses, systems, and methods using transfer chambers

By performing a pump purge cycle in the transfer chamber, the gaseous impurities are removed by using a vacuum pump and purge gas, the problem of difficulty in removing gaseous impurities in the transfer chamber is solved, and high-quality deposition and low defect rate are achieved during substrate processing.

CN120077474APending Publication Date: 2025-05-30APPLIED MATERIALS INC
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Patent Information

Application Number
CN202380074121.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-10-26
Filing Date
2023-10-16
Publication Date
2025-05-30

AI Technical Summary

Technical Problem

When using the transfer chamber for substrate processing, gaseous impurities (such as moisture and oxygen) are difficult to effectively reduce or remove, resulting in the occurrence of defects during substrate processing.

Method used

By performing a pump purge cycle in the transfer chamber, the gas volume is reduced according to the base pressure using a vacuum pump, and after operation, the purge gas is directed backfilling to the transfer chamber according to the backfilling pressure until the threshold pressure is met to remove gaseous impurities.

Benefits of technology

Effectively reduce or remove gaseous impurities in the transfer chamber, ensure the improvement of the quality of the substrate during the atmospheric epitaxial deposition process, reduce the occurrence of defects, and improve the processing efficiency.

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Abstract

Embodiments of the present disclosure relate to devices, systems, and methods using transfer chambers. In one or more embodiments, gaseous impurities are reduced in the transfer chamber. In one embodiment, a method includes receiving user input via a user interface, the user input instructing a substrate processing system to perform a maintenance resume operation according to a set of parameters, the maintenance resume operation including, for each of a number of pump purge cycles, a plurality of pump purge cycles; the vacuum pump is operated to reduce the amount of gas in the transfer chamber as a function of the base pressure and then direct purge gas to the transfer chamber as a function of the backfill pressure. The method also includes, after completion of the cycle, directing a purge gas into the transfer chamber until a threshold pressure is met, and providing an indication of completion of the operation through the user interface.
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Description

Technical Field

[0001] Embodiments of the present disclosure relate to apparatuses, systems, and methods using a transfer chamber. In one or more embodiments, gaseous impurities (such as moisture and oxygen) are reduced or removed from the transfer chamber, e.g., to prepare for substrate processing after the transfer chamber is exposed to ambient air (e.g., environmental air such as the atmosphere). Background Art

[0002] Epitaxial deposition is a deposition process that can be used to grow a layer on a crystalline surface of a substrate. A transfer chamber can be used to transfer a substrate between one or more other chambers for processing. The interior of the transfer chamber may be exposed to ambient air from time to time. For example, during preventive or corrective maintenance, it may be desirable or necessary to open the transfer chamber to ambient air while accessing internal components of the transfer chamber. As another example, there may be a leak in the transfer chamber that allows gaseous impurities to enter, or a contaminated substrate may be introduced or present in the chamber. Additionally, the pump - out time of another chamber (such as a load - lock chamber) connected to the transfer chamber may be insufficient, resulting in gaseous impurities being introduced into the transfer chamber. Further, opening the doors of the respective chambers or components can allow gas to flow into the transfer chamber. In selective epitaxial growth of an epitaxial layer, including at atmospheric pressure, the presence of gaseous impurities (such as moisture or oxygen) can cause defects in the substrate and in the structures formed on or in the substrate.

[0003] Accordingly, there is a need for improved methods, apparatuses, and systems (such as those related to atmospheric epitaxial deposition) using a transfer chamber that facilitate reducing or removing gaseous impurities from the transfer chamber (e.g., to prepare for subsequent substrate processing in a transfer chamber exposed to ambient air). Summary of the Invention

[0004] Embodiments of the present disclosure relate to apparatuses, systems, and methods using a transfer chamber. In one or more embodiments, gaseous impurities (such as moisture and oxygen) are reduced or removed from the transfer chamber, e.g., to prepare for substrate processing after the transfer chamber is exposed to ambient air (e.g., environmental air such as the atmosphere).

[0005] In one embodiment, a method for processing a substrate includes: receiving user input via a user interface, the user input instructing a substrate processing system to perform a maintenance recovery operation on a transfer chamber according to a set of parameters including a base pressure and a backfill pressure. The method also includes: for each of a number of pump purge cycles, operating a vacuum pump according to the base pressure for the transfer chamber to reduce the amount of gas in the transfer chamber. The method also includes: for each of a plurality of pump purge cycles and after operating the vacuum pump, directing a purge gas to the transfer chamber according to the backfill pressure. The method also includes: after completing a number of cycles, directing the purge gas into the transfer chamber until a threshold pressure is met. The method also includes: instructing to display an indication of completion of the maintenance recovery operation of the transfer chamber via the user interface.

[0006] In one embodiment, a substrate processing system includes a transfer chamber, one or more load lock chambers, a vacuum pump fluidly connected to the one or more load lock chambers, a user interface, and a controller coupled to the user interface and the vacuum pump. The controller is also configured to receive user input via the user interface, the user input instructing the substrate processing system to perform a maintenance recovery operation on the transfer chamber according to a set of parameters including a base pressure and a backfill pressure. The controller is also configured to: for each of a number of pump purge cycles, operate the vacuum pump according to the base pressure for the transfer chamber to reduce the amount of gas in the transfer chamber. The controller is also configured to: for each of a plurality of pump purge cycles and after operating the vacuum pump, direct a purge gas to the transfer chamber according to the backfill pressure. The controller is also configured to: after completing a number of cycles, direct the purge gas into the transfer chamber until a threshold pressure is met. The controller is also configured to: instruct to display an indication of completion of the maintenance recovery operation of the transfer chamber via the user interface.

[0007] In one embodiment, a non-transitory computer-readable medium for performing a maintenance recovery operation on a transfer chamber of a substrate processing system includes instructions that, when executed, cause a number of operations to be performed. The number of operations includes receiving user input via a user interface, the user input instructing the substrate processing system to perform a maintenance recovery operation on the transfer chamber according to a set of parameters including a base pressure and a backfill pressure. The number of operations also includes: for each of a number of pump purge cycles, operating a vacuum pump according to the base pressure for the transfer chamber to reduce the amount of gas in the transfer chamber. The number of operations also includes: for each of a plurality of pump purge cycles and after operating the vacuum pump, directing a purge gas to the transfer chamber according to the backfill pressure. The number of operations also includes: after completing a number of cycles, directing the purge gas into the transfer chamber until a threshold pressure is met. The number of operations also includes: instructing to display an indication of completion of the maintenance recovery operation of the transfer chamber via the user interface. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Reference may be made to a number of specific embodiments to more particularly illustrate the present disclosure as briefly summarized above, to more fully understand the above-described features of the present disclosure, and the accompanying drawings illustrate some of these specific embodiments. However, it should be noted that the drawings only illustrate the general specific embodiments of the present disclosure and should not be regarded as limiting the scope of the present disclosure, since the disclosure may admit other equivalent specific embodiments.

[0009] Figure 1 is a schematic diagram of a system for processing a substrate according to one embodiment.

[0010] Figure 2 is a schematic diagram of a method of using a transfer chamber of a substrate processing system according to one embodiment.

[0011] Figure 3 is a schematic diagram of a substrate processing system according to one embodiment.

[0012] Figure 4 is a schematic diagram of a substrate processing system according to one embodiment.

[0013] For the sake of clarity, wherever possible, the same reference numerals have been used to label the same elements common to the drawings. It is contemplated that elements disclosed in one specific embodiment may be beneficially incorporated in other specific embodiments without further recitation. Specific Embodiments

[0014] Embodiments of the present disclosure relate to apparatuses, systems, and methods for using a transfer chamber (e.g., related to an atmospheric epitaxial deposition chamber). In one or more embodiments, gaseous impurities (e.g., moisture and oxygen) are reduced or removed from the transfer chamber, e.g., in preparation for substrate processing after the transfer chamber has been exposed to ambient air. In one or more specific embodiments, the transfer chamber is exposed to one or more atmospheric conditions at least part of the time.

[0015] To facilitate the production of an excellent epitaxial layer on a substrate such as a silicon substrate under atmospheric processing chamber conditions, it is advantageous to reduce or eliminate the amount of gaseous impurities (e.g., oxygen or moisture) present during the deposition process. Thus, it is advantageous to reduce or eliminate trace amounts of oxygen or moisture from a substrate processing system (e.g., a system including an epitaxial processing chamber). Possible ways for oxygen or moisture to enter the deposition chamber are, for example, leaks in the chamber itself, contaminated substrates, too short a pump-out time for the load lock entering the transfer chamber (which may be referred to as the "inert" part of the machine) (e.g., the duration of the pump-out time is not sufficient to reduce the oxygen level, moisture, or both to a threshold level), and the presence of oxygen in the inert regions of the machine. The opening of the system door may also cause oxygen or moisture to flow into the transfer chamber.

[0016] A transfer chamber for atmospheric epitaxial deposition can be purged continuously or periodically with a set or configured amount (e.g., 45 liters per minute) of purge gas (e.g., nitrogen, hydrogen, and / or argon) to maintain an inert condition in the transfer chamber. The transfer chamber may not be directly connected to a vacuum pump and may be configured as an atmospheric component of an atmospheric epitaxial (substrate) processing system. For example, the vacuum pump can be fluidly connected to a load lock chamber that is part of the system.

[0017] For preventive and corrective maintenance activities, it may be necessary to frequently open the lid of the transfer chamber to access internal components, such as a transfer robot or a slit valve. When the lid of the transfer chamber is open, ambient air can enter the transfer chamber.

[0018] After the maintenance activity is completed, the lid of the transfer chamber is closed again and a leak check can be performed. However, after the lid has been opened and closed, certain operations (even with a purge gas of 45 liters per minute, such as nitrogen) may not be sufficient to establish an oxygen-free or substantially oxygen-free condition (e.g., an oxygen level below a threshold) inside the transfer chamber. In such a case, if substrate processing is started immediately or shortly after the maintenance activity of the transfer chamber, an oxygen contamination problem may occur. Such operations may result in processing delays and reduced throughput. This effect can also include a high defect level of substrates and contaminants (e.g., so-called "spider webs") inside the epitaxial deposition chamber. A "spider web" is a tiny quartz SiO 2 string that can form and hang down from the upper surface of the processing chamber (e.g., the upper window of the processing chamber).

[0019] The transfer chamber may also be unable to be evacuated, or the method of dealing with impurities may be complex, time-consuming, and / or have a high error rate or failure rate. As an example, a user may forget to close certain components (such as doors or valves) that affect impurities in the transfer chamber. For example, ambient air, dust, and / or moisture may move into the transfer chamber. As another example, a user may open and / or close components too early and / or too late, which may cause leaks and / or may affect impurities in the transfer chamber.

[0020] A maintenance recovery operation (which can also be referred to as a maintenance recovery macro process) for a transfer chamber of a substrate processing system for atmospheric epitaxial deposition operations can more quickly, safely, and consistently restore the transfer chamber to an available state after the transfer chamber has been exposed to ambient air. The maintenance recovery operation can be performed according to a set of parameters. This set of parameters includes a base pressure and a backfill pressure. The maintenance recovery operation can be performed according to a set of parameters.

[0021] To use the transfer chamber, a user input may be received that instructs a substrate processing system to perform a maintenance recovery operation on the transfer chamber according to a parameter set that includes a base pressure and a backfill pressure. The maintenance recovery operation includes, for each of a number of pump purge cycles, operating a vacuum pump according to the base pressure to reduce the amount of gas in the transfer chamber. The maintenance recovery operation further includes, for each of a plurality of pump purge cycles and after operating the vacuum pump, directing a purge gas to the transfer chamber according to the backfill pressure. The maintenance recovery operation further includes directing the purge gas into the transfer chamber after completion of a number of cycles until a threshold pressure is met. After the maintenance recovery operation, an indication that the maintenance recovery operation of the transfer chamber is complete may be displayed via a user interface.

[0022] This set of parameters may include one or more of a switching point pressure, a base duration, a load lock chamber selection, or the number of pump purge cycles within the maintenance recovery operation. The switching point pressure may be the operation of the vacuum pump from a slow rough pump to a fast rough pump of the load lock chamber. The base duration may be the time the vacuum pump operates once the base pressure is reached. When there are multiple load lock chambers, the load lock chamber selection may indicate which load lock chamber to use to pump the transfer chamber. The number of pump purge cycles may be the number of repetitions (cycles) of certain operations within the maintenance recovery operation. For example, the maintenance recovery operation may include an operation of applying the vacuum pump to the transfer chamber (directly or indirectly), and then directing a purge gas (e.g., N 2 or H 2 ) to the transfer chamber in a subsequent operation to increase the pressure in the transfer chamber. These two operations may be part of a single cycle, and the operations of the single cycle may be repeated (cycled) according to the number of pump purge cycles.

[0023] In one or more embodiments, the user may provide a single indication for the maintenance recovery operation to be performed. For example, the user may provide a single click for the maintenance recovery operation to be initiated and executed. In one or more embodiments, one or more values of a set of parameters, such as preset or preconfigured values, may be presented to the user via the user interface. The user may continue to indicate that the maintenance recovery operation proceed according to these values. The user may select alternative values and update the values of the parameters accordingly, and then indicate that the maintenance recovery operation proceed with the updated values. For example, the value associated with one of the parameters in the set of parameters may be updated while the values of the remaining parameters are maintained at the preconfigured values.

[0024] Figure 1Schematic diagram of a system 100 for processing a substrate according to an embodiment. The system 100 includes a cluster tool 101. The cluster tool 101 of the system 100 includes one or more processing chambers coupled to at least one transfer chamber 104, such as an epitaxial chamber 102 and / or an etching chamber 103 (multiple processing chambers are shown).

[0025] The transfer chamber 104 is coupled to one or more epitaxial chambers 102. The transfer chamber 104 has a transfer robot 115 disposed in the center for transferring substrates between the epitaxial chamber 102, the etching chamber 103, and a set of load lock chambers 112. The factory interface 120 is connected to the transfer chamber 104 through the load lock chambers 112. The factory interface 120 is coupled to one or more pods 130 on the opposite side of the load lock chambers 112. The pods 130 are typically front-opening unified wafer pods (FOUPs) and can be accessed from the clean room where the cluster tool 101 is arranged.

[0026] During operation, the substrate is transferred to one or more epitaxial chambers 102 to selectively grow an epitaxial layer on the substrate. Then the substrate is transferred to one or more etching chambers 103, where the substrate is exposed to atomic hydrogen radicals to etch the substrate and remove nodules from the substrate. The system 100 may include one or more annealing chambers, where the epitaxial layer formed on the substrate is annealed to an annealing temperature.

[0027] As described below, during operation, the transfer chamber 104 can be continuously or periodically purged with a purge gas (such as nitrogen, hydrogen, and / or argon), so that the transfer robot 115 can transfer the substrate under nitrogen, hydrogen, and / or argon between all the processing chambers, the load lock chambers 112, multiple pass-through stations (if used), and / or their doors (such as slit valves). Transferring the substrate in a nitrogen, hydrogen, and / or argon atmosphere can help reduce the chance of contamination and improve the quality of the deposited epitaxial film. The present disclosure contemplates that one or more of the chambers shown in the system 100 may not be aggregated into the cluster tool 101. For example, any one or both of the etching chambers 103 in the system 100 may be separated (non-clustered) from the cluster tool 101 having the epitaxial chamber 102.

[0028] In Figure 1 the illustrated embodiment, the epitaxial chamber 102 and the etching chamber 103 are different from each other. In one specific embodiment that can be combined with other specific embodiments, each of the processing chambers such as the epitaxial chamber 102 and the etching chamber 103 is a single processing chamber. In such a specific embodiment, the epitaxial chamber 102 is two single processing chambers, and the etching chamber 103 is two single processing chambers.

[0029] System 100 includes a controller 150 configured to control the operation of cluster tool 101. Controller 150 is coupled to pod 130, factory interface 120, load lock chamber 112, epitaxial chamber 102, transfer chamber 104, transfer robot 115, and etch chamber 103 to control their operation. Controller 150 may be similar to, for example, controller 301 described below. Controller 150 contains instructions that, when executed, cause cluster tool 101 to perform one or more operations as referred to Figure 2 as described. In one embodiment, which may be combined with other embodiments, controller 150 is a controller that contains instructions for receiving user input through a user interface, the user input indicating that the substrate processing system perform a maintenance recovery operation on the transfer chamber according to a set of parameters. This set of parameters includes base pressure and backfill pressure. The controller further includes instructions to perform the following operations: for each of a number of pump purge cycles, operate a vacuum pump according to the base pressure for the transfer chamber to reduce the amount of gas in the transfer chamber. The controller further includes instructions to perform the following operations: for each of a plurality of pump purge cycles and after operating the vacuum pump, direct a purge gas to the transfer chamber according to the backfill pressure. The controller further includes instructions to perform the following operations: after completing a number of cycles, direct the purge gas into the transfer chamber until a threshold pressure is met. The controller further includes instructions to display an indication of the completion of the maintenance recovery operation of the transfer chamber through the user interface. System 100 includes one or more vacuum pumps 151 (e.g., one or more vacuum pumps) fluidly connected to each load lock chamber 112 through respective slow roughing valves 154a, 154b and respective fast roughing valves 155a, 155b. System 100 includes one or more purge gas sources 153 fluidly connected to each load lock chamber 112 through respective purge valves 152a, 152b.

[0030] The system includes one or more transfer pump valves 156 (which may or may not be fluidly connected to the same one or more vacuum pumps 151) and one or more transfer purge valves 157 (which may or may not be fluidly connected to the same one or more purge gas sources 153). The present disclosure contemplates that one or more transfer pump valves 156 and / or one or more transfer purge valves 157 may be omitted. Figure 1 The vacuum pumps 151 shown may be integrated into a single vacuum pump, and / or Figure 1 the purge gas sources 153 shown may be integrated into a single purge gas source.

[0031] Before the pump purge cycle, system 100 closes the transfer pump valve 156 (if used) and the transfer purge valve 157 (if used), and / or confirms that the transfer pump valve 156 (if used) and the transfer purge valve 157 (if used) are closed. During the pump purge cycle, gas is exhausted from the transfer chamber 104 through one or more load lock chambers 112, and purge gas is supplied to the transfer chamber 104 through one or more load lock chambers 112.

[0032] Figure 2 is a schematic diagram of a method 200 of using a transfer chamber of a substrate processing system. In one or more embodiments, the transfer chamber is the transfer chamber 104, and the substrate processing system can be or include system 100 and / or cluster tool 101.

[0033] Operation 205 of method 200 includes receiving user input indicating that the substrate processing system performs a maintenance recovery operation according to a set of parameters. This set of parameters may include a base pressure and a backfill pressure. In one or more specific embodiments, the backfill pressure is a value set in the range of about 500 Torr to about 770 Torr, such as set in the range of about 500 Torr to about 750 Torr. In one or more specific embodiments, the backfill pressure is about 760 Torr. In one or more specific embodiments, the backfill pressure is equal to atmospheric pressure or the difference from atmospheric pressure is within 20 Torr or less. The base pressure can be achieved in the transfer chamber using, for example, a vacuum pump (e.g., a vacuum pump). In one or more embodiments, the set of parameters may further include an indication of the amount (quantity) of the pump purge cycle, a switching point pressure of the vacuum pump, a base duration, or a load lock chamber selection (e.g., the selection of the load lock chamber through which pumping occurs) of one or more.

[0034] The user input can be received through a user interface, as further described herein, for example, with reference to Figure 3 or 4. In one or more specific embodiments, recommended values of one or more parameters of the set of parameters for the maintenance recovery operation can be displayed through the user interface. Then, the substrate processing system can receive an indication of the user-selected value for each of the one or more parameters through the user interface.

[0035] In one or more embodiments, the user input is an indication of a maintenance recovery operation of the transfer chamber to be performed according to a set of parameters preconfigured (e.g., preset by the system or preselected by the user) for the maintenance recovery operation. The user interface may display the preconfigured values of the set of parameters to the user, and the user may accept the preconfigured values by indicating that the maintenance recovery operation should proceed. In one or more embodiments, the user may be allowed to modify the preconfigured values of one or more (e.g., all) of the parameters in the set of parameters. In one or more embodiments, the user interface may display the values but not allow modification of one or more or all of the preconfigured values. In one or more embodiments, the user interface may not display the preconfigured values, and the user may choose to proceed without selecting or verifying the preconfigured values. The preconfigured values may also be modified or updated through other mechanisms, such as by the manufacturer of the substrate processing system through local or remote software or firmware updates.

[0036] In one or more embodiments, the maintenance recovery operation may include an inspection to verify that the load lock chamber is in an appropriate state to provide or supply pumping capacity according to the maintenance recovery operation. In cases where the substrate processing system includes two or more load lock chambers, the inspection may verify that one or more or all of the load lock chambers are in the correct state, including the load lock chamber that provides pumping capacity. In one or more embodiments, this set of parameters may further include a load lock chamber selection. In such an embodiment, method 200 may further include the following operations: selecting a first slow roughing valve to open from a first slow roughing valve and a second slow roughing valve in response to the load lock chamber selection, the first slow roughing valve fluidly connecting a vacuum pump to a first load lock chamber, the first load lock chamber fluidly connected to the transfer chamber, and the second slow roughing valve fluidly connecting the vacuum pump to a second load lock chamber, the second load lock chamber fluidly connected to the transfer chamber. The operation of selecting the slow roughing valve to open may occur before operation 210. The operation of selecting the slow roughing valve to open may also occur once and be separate from the repeated operations of each pump purge cycle according to operation 220. In one or more embodiments, a value for the load lock chamber selection may be obtained from the user through the user interface. In other embodiments, a value for the load lock chamber selection may be preconfigured.

[0037] In one or more embodiments, the maintenance recovery operation may further include opening the slit valve of the load lock chamber (including the load lock chamber that provides pumping capacity), and closing any open purge or exhaust valves of the transfer chamber or verifying that all purge and exhaust valves are closed. Then, method 200 may further include opening the slow roughing valve of the load lock chamber, the slow roughing valve providing a fluid connection between the vacuum pump and the load lock chamber.

[0038] Operation 210 of method 200 includes operating a vacuum pump based on a base pressure (as specified in operation 205) to reduce the amount of gas in the transfer chamber. The base pressure represents the target pressure to which the transfer chamber will be pumped during a maintenance recovery operation. The base pressure can represent a maximum pressure at which the transfer chamber will be maintained for a period of time (e.g., the pump at base time) as part of a pump purge cycle. In one or more embodiments, the base pressure can be set to a value between about 0.1 Torr and about 200 Torr, such as a value between about 5 Torr and about 30 Torr.

[0039] In one or more embodiments, this set of parameters can include a switching point pressure. This method can optionally include directing the slow roughing valve to open, and then directing the fast roughing valve to open in response to identifying that the switching point pressure has been met after operating the vacuum pump to remove gas from the transfer chamber through the slow roughing valve. The vacuum pump can be operated to pump the transfer chamber in two or more stages (either directly or indirectly through one or more other chambers of the substrate processing system), including through the slow roughing valve and the fast roughing valve. The switching point can represent the pressure at which the vacuum pump switches from pumping the transfer chamber through the slow roughing valve to pumping the transfer chamber through the fast roughing valve or through both the slow roughing valve and the fast roughing valve. In one or more examples, the switching point can be a value set in the range of about 150 Torr to 250 Torr, such as in the range of 180 Torr to 220 Torr. In one or more examples, the switching point can be or about 200 Torr. In one or more examples, the base pressure is less than the switching point.

[0040] In one or more embodiments, this set of parameters can include a base duration. Operation 210 can include operating the vacuum pump for at least the base duration (which can be referred to as the "base pump") based on the base pressure. The base duration can correspond to the time of operating the vacuum pump during a maintenance recovery operation after reaching the base pressure. The method can then include, after the base duration, directing the purge valve to open to direct purge gas into the transfer chamber. In one or more specific embodiments, the base duration is at least 5 seconds. In one or more specific embodiments, the base duration is greater than 5 seconds, such as 1 minute or longer.

[0041] Operation 215 of method 200 includes directing purge gas into the transfer chamber in accordance with a backfill pressure. In one or more embodiments, after pumping at a base pressure for a base time (base duration completed), operation 215 includes opening the purge valve of the transfer chamber to backfill the transfer chamber and the load lock chamber with purge gas until the backfill pressure (backfill pressure set point) of this set of parameters is reached. The purge gas can be, for example, nitrogen, hydrogen, and / or argon. In one or more specific embodiments, the purge gas is at least 99.9% nitrogen by atomic percentage, at least 99.9% hydrogen by atomic percentage, or at least 99.9% argon by atomic percentage. In one or more specific embodiments, the purge gas is at least 99.9999% nitrogen by atomic percentage, at least 99.9999% hydrogen, or at least 99.9999% argon by atomic percentage.

[0042] Operation 220 may optionally include repeating the operation for each of a plurality of pump purge cycles, each cycle including, for example, operation 210 and operation 215. The routine of the pump purge cycle (e.g., including operation 210 and operation 215) can restart as many times as the number of pump cleaning cycles selected by the user through the user interface (which can also be referred to as the maintenance screen) (e.g., displayed as "number of cycles" on the user interface maintenance screen). The number of pump purge cycles can be one or more, and can also be referred to as a set of cycles. In an embodiment where the number of pump purge cycles is 1, method 200 can proceed directly from operation 215 to operation 225. In one or more specific embodiments, operations 210 and 215 are performed and / or repeated until the impurity level of impurities (such as oxygen) in the transfer chamber drops below 0.1 ppm. In one or more specific embodiments, operations 210 and 215 are performed at least twice.

[0043] Operation 225 of method 200 includes directing purge gas into the transfer chamber until a threshold pressure is met. Operation 225 can be performed after operation 215. Optionally, operation 225 can be performed after completing a plurality of cycles according to operation 220. Once the last cycle is completed, the transfer chamber continues to be backfilled until the current atmospheric pressure exceeds the threshold pressure, and then the atmospheric exhaust valve of the transfer chamber opens, and the purge gas continues to be introduced into the transfer chamber (the purge gas supply remains open). In one or more embodiments, the threshold pressure is about 5 Torr to about 20 Torr, such as 10 Torr, or at least 5 Torr. As further described herein, the purge gas can be nitrogen, hydrogen, and / or argon.

[0044] With the purge gas source remaining open, the repair recovery operation (repair procedure) is completed, and the slit valve between the transfer chamber and the load lock chamber is closed.

[0045] Operation 230 of method 200 includes displaying an indication that the maintenance recovery operation of the transfer chamber has been completed. The indication of the completion of the maintenance recovery operation can be displayed through a user interface.

[0046] In one or more embodiments, method 200 may include receiving a signal from an oxygen sensor indicating the impurity level (e.g., oxygen level) of the transfer chamber. In one or more embodiments, the oxygen sensor may be attached to the transfer chamber (e.g., oxygen sensor 105) to directly measure the oxygen level in the internal volume of the transfer chamber. In one or more embodiments, the oxygen sensor may be attached to a different chamber of the substrate processing system, such as one of the epitaxial chamber 102, the etching chamber 103, and / or the load lock chamber 112. The number of pump purge cycles may be based on the signal indicating the impurity level of the transfer chamber. For example, an impurity level threshold may be set, and when the oxygen level threshold has been met, according to the signal from the oxygen sensor, the cycle of the pump purge cycle may be completed such that the number of pump purge cycles corresponds to the number of pump purge cycles performed to bring the oxygen level to the oxygen level threshold.

[0047] In one specific embodiment that can be combined with other specific embodiments, the non-transitory computer-readable medium includes instructions that, when executed, cause the system to perform one or more of the operations of method 200, such as 205, 210, 215, 220, 225, and / or 230. In one example that can be combined with other examples, the non-transitory computer-readable medium is part of a controller.

[0048] Figure 3 is a schematic diagram of a substrate processing system 300 having a transfer chamber according to one embodiment. The substrate processing system 300 may include one or more components of system 100, including a cluster tool 101, the cluster tool 101 including a transfer chamber 104 having an optional oxygen sensor 105 and at least one load lock chamber 112. The substrate processing system 300 may also include one or more vacuum pumps 151 fluidly connected to the cluster tool 101. In one or more embodiments, one or more vacuum pumps 151 are fluidly connected to at least one load lock chamber 112 of the cluster tool 101. The components of the substrate processing system 300 may communicate with and be controlled by a controller 301.

[0049] In one embodiment, the controller 301 includes a central processing unit (CPU) 315, a memory 320, and support circuitry 310, which may be coupled for communication. The memory 320 is a non-transitory computer-readable medium, such as the controller 150 ( Figure 1 shown), and may be coupled for communication. The non-transitory computer-readable medium may include instructions for performing as described herein, for example, with reference to Figure 2Instructions for a method 200 of using a transfer chamber of a substrate processing system are further described. The memory 320 may contain instructions, and the instructions may be executed by the CPU 315. The substrate processing system 300 also includes a controller 150 coupled to the substrate processing system 300 to control the operation of the substrate processing system 300 (as Figure 2 shown).

[0050] The controller 301 may be communicatively coupled to a user interface 302. The user interface 302 may allow a user to provide an indication for a maintenance recovery operation of the transfer chamber 104 to be performed according to a set of parameters for the maintenance recovery operation. The present disclosure contemplates that the user interface 302 may be a part of the controller 301. As described above and below, the set of parameters may be preconfigured and / or specified by the user.

[0051] In one or more embodiments, the user interface 302 may provide an interface to obtain user input through an execution component 325 (button, interface, instruction), the user input indicating that a maintenance recovery operation of the transfer chamber will be performed according to a set of parameters that have been preset for the maintenance recovery operation. As further discussed herein, the set of parameters may include one or more of a base pressure, a backfill pressure, a number of pump purge cycles, a switching point pressure, a base duration, and / or a load lock chamber selection.

[0052] The user interface may display the preconfigured values of the set of parameters to the user, and the user may accept the preconfigured values by indicating that the maintenance recovery operation continues. In one or more embodiments, the user may indicate that the maintenance recovery operation continues by selecting the execution component 325, and the maintenance recovery operation may then proceed as described herein, e.g., according to the method 200 described in the reference Figure 2 described. Once the maintenance recovery operation is completed, a completion component 330 may display an indication of process completion through the user interface 302.

[0053] In one or more embodiments, the user interface may display the preconfigured values of the set of parameters to the user, and the preconfigured values of one or more of the set of parameters may be modified by the user. In one or more embodiments, the user interface may display the values but not allow modification of one or more or all of the preconfigured values. In one or more embodiments, the user interface may not display the preconfigured values, and the user may choose to proceed without selecting or verifying the preconfigured values. The preconfigured values may also be modified or updated through other mechanisms, such as through the manufacturer of the substrate processing system by local or remote software or firmware updates.

[0054] Figure 4Schematic diagram of a substrate processing system 400 having a transfer chamber according to one embodiment. The substrate processing system 400 may include one or more components of the system 100, including a cluster tool 101, which includes a transfer chamber 104 having an optional oxygen sensor 105 and at least one load lock chamber 112, and a substrate processing system 300, including one or more vacuum pumps 151, a CPU 315, a memory 320, support circuitry 310, and a user interface 402.

[0055] In one or more embodiments, the substrate processing system 400 may provide a user interface 402 to obtain user input and to display to the user information related to maintenance recovery operations of the transfer chamber. In one or more specific embodiments, the user interface 402 includes a start component 324 (button, interface, instruction) and an execution component 325 indicating that the maintenance recovery operation of the transfer chamber will proceed. In one or more specific embodiments, a window 410 is displayed in response to a user selecting the start component 324. When the user selects one or more parameter components 425 - 450 in the window 410 and / or the user selects the execution component 325, the system automatically executes the method 200 according to the one or more parameters. In one or more embodiments, each parameter component 425 - 450 includes a fillable box and / or a drop-down menu, and the user can specify the parameter by filling in the corresponding fillable box or selecting an option of the corresponding drop-down menu.

[0056] Once the maintenance recovery operation is completed, a completion component 330 may display an indication of the process completion through the user interface 402. As further discussed herein, the set of parameters may include one or more of base pressure, backfill pressure, number of pump purge cycles, switching point pressure, base duration, or load lock chamber selection.

[0057] The start component 324 may be displayed before the display of the window 410 and the execution component 325. The execution component 325 may be displayed during the display of the window 410, after the display of the window 410, and / or may be displayed as part of the window 410 on the user interface. After the display of the window 410 and / or the execution component 325, and / or after closing the window 410 and / or the execution component 325 from the user interface, the completion component 330 may be displayed on the user interface.

[0058] In one or more embodiments, the user interface 402 may display to the user pre-configured, default, or suggested values of the set of parameters. In one or more embodiments, the user interface 402 may include a base pressure component 425, a pump base time component 430, a load lock selection component 435, a pump purge cycle count component 440, a backfill pressure component 445, or a switching point component 450, which may display the base pressure value, the pump base time, the load lock selection, the number of pump purge cycles, the backfill pressure, or the switching point, respectively. In one or more embodiments, the value of one or more parameters in a set of parameters may be displayed to the user but not modified by the user via the user interface.

[0059] In other embodiments, the value of one or more of a set of parameters may be modified by the user. Default or suggested values may be displayed to the user, and the user interface may allow the user to modify the values. In one or more embodiments, the pre-configured values may be modified by the user, such as by filling in a fillable box or selecting an option from a drop-down menu. For example, the base pressure may be displayed as 1 Torr and may be modified by the user to another value via the base pressure component 425 of the user interface. As another example, the switching point may be displayed as approximately 200 Torr and may be modified by the user to another value via the switching point component 450 of the user interface.

[0060] In one or more embodiments, each value may be restricted to a range of values selected by the user. For example, the base pressure may be displayed as approximately 1 Torr and may be modified by the user via the base pressure component 425 of the user interface to a value within the range of 0.1 Torr to approximately 200 Torr. As another example, the switching point may be displayed as 200 Torr, and the user may modify it to another value via the switching point component 450 of the user interface, and the user may modify it to the following value: in the range of 150 Torr to 250 Torr.

[0061] In one or more embodiments, machine learning or artificial intelligence may be used to determine the value of one or more parameters in a set of parameters. For example, the controller 301 may further include a machine learning model that is being or will be trained based on a set of training data. The input training data may include signals from the oxygen sensor 105 corresponding to the oxygen level or contents of the transfer chamber, signals from one or more pressure sensors of the cluster tool 101 (e.g., the pressure sensor of the transfer chamber 104), and for one or more parameters in a set of parameters. For example, one or more machine learning algorithms and / or one or more artificial intelligence algorithms may be used to optimize the selected parameters and / or pre-configure the parameters. One or more machine learning algorithms and / or one or more artificial intelligence algorithms may use a linear regression model and / or an averaging scheme. Method 200 may be performed partially automatically (e.g., with user input) and / or may be performed completely automatically (e.g., without user input).

[0062] In one or more embodiments, a user may perform a cycle of maintenance recovery operations as part of preparing for processing using a substrate processing system, including a transfer chamber. When performing the cycle of maintenance recovery operations, oxygen levels, pressure, and associated times, as well as one or more parameter values, may be input into a machine learning model. The machine learning model may output a value for one or more of the parameters in the set of parameters, and that value may then be used in subsequent maintenance recovery operations. For example, the machine learning model may output a value for the pump base time parameter, and the pump base time component 430 of the controller 301 may then use that value during the maintenance recovery operation.

[0063] Advantages of the present disclosure include removing or eliminating trace amounts of oxygen or moisture from a substrate processing system, including the transfer chamber of the system, in a reduced amount of time. Advantages also include reducing machine downtime, reducing processing time, increasing throughput, reducing substrate defects, and reducing or eliminating errors and / or failures in impurity reduction.

[0064] It is contemplated that the various topics disclosed herein may be combined. By way of example, one or more aspects, features, components, operations, and / or characteristics of the system 100, method 200, substrate processing system 300, and / or substrate processing system 400 may be combined. Additionally, it is contemplated that one or more aspects disclosed herein may include some or all of the above benefits.

[0065] While the foregoing is directed to specific embodiments of the present disclosure, other and further specific embodiments of the disclosure may be envisioned without departing from the basic scope of the foregoing. The present disclosure also contemplates that one or more aspects of the specific embodiments described herein may be substituted for one or more of the other aspects described. The scope of the present disclosure is determined by the appended claims.

Claims

1. A method of using a transfer chamber of a substrate processing system, the method comprising: Receiving user input via a user interface, the user input indicating that the substrate processing system perform a maintenance recovery operation on the transfer chamber according to a set of parameters including a base pressure and a backfill pressure; for each of a certain number of pump purge cycles, operating a vacuum pump according to the base pressure for the transfer chamber to reduce the amount of gas in the transfer chamber; For each of the number of pump purge cycles and after operating the vacuum pump, directing a purge gas to the transfer chamber according to the backfill pressure; After completing the number of cycles, directing the purge gas to the transfer chamber until a threshold pressure is met; and Displaying via the user interface an indication that the maintenance recovery operation of the transfer chamber has been completed.

2. The method of claim 1, the method further comprising: Displaying via the user interface a suggested value of one or more parameters of the set of parameters for the maintenance recovery operation; and Receiving via the user interface an indication of a user-selected value for the one or more parameters.

3. The method of claim 1, wherein the user input includes an indication for the maintenance recovery operation for the transfer chamber to be performed according to the set of parameters preconfigured for the maintenance recovery operation.

4. The method of claim 1, wherein the set of parameters further includes a switching point pressure, and the maintenance recovery operation further comprises: Indicating that a slow roughing valve is opened; and In response to identifying that the switching point pressure has been met after operating the vacuum pump to remove gas from the transfer chamber through the slow roughing valve, indicating that a fast roughing valve is opened.

5. The method of claim 1, wherein the set of parameters further includes a base duration, and the maintenance recovery operation further comprises: Operating the vacuum pump for at least the base duration at least partially based on operating the vacuum pump according to the base pressure; and After the base duration, guiding a purge valve to open to direct the purge gas to the transfer chamber.

6. The method of claim 1, wherein the set of parameters further includes a load lock chamber selection, and the maintenance recovery operation further comprises: In response to the load lock chamber selection, selecting the first slow roughing valve from a first slow roughing valve and a second slow roughing valve to open, the first slow roughing valve fluidly connecting the vacuum pump to a first load lock chamber, the first load lock chamber being coupled to the transfer chamber, and the second slow roughing valve fluidly connecting the vacuum pump to a second load lock chamber, the second load lock chamber being coupled to the transfer chamber.

7. The method of claim 1, the method further comprising: Receiving a signal from an oxygen sensor indicating the oxygen level of the transfer chamber, wherein the number of pump purge cycles is at least partially based on the signal indicating the oxygen level of the transfer chamber.

8. The method according to claim 1, wherein the purge gas comprises at least 99.9999 atomic percent nitrogen, and the threshold pressure is at least 5 Torr greater than atmospheric pressure.

9. A substrate processing system, the substrate processing system comprising: a transfer chamber; one or more load lock chambers; a vacuum pump fluidly connected to the one or more load lock chambers; a user interface; and a controller coupled to the user interface and the vacuum pump, the controller being configured to: receive user input through the user interface, the user input indicating that the substrate processing system performs a maintenance recovery operation on the transfer chamber according to a set of parameters including a base pressure and a backfill pressure, for each of a number of pump purge cycles, operate the vacuum pump according to the base pressure for the transfer chamber to reduce the amount of gas in the transfer chamber, and for each of the number of pump purge cycles and after operating the vacuum pump, direct a purge gas to the transfer chamber according to the backfill pressure, after completing the number of cycles, direct the purge gas to the transfer chamber until a threshold pressure is met, and display an indication through the user interface that the maintenance recovery operation of the transfer chamber has been completed.

10. The substrate processing system according to claim 9, wherein the controller is further configured to: display through the user interface a suggested value of one or more parameters in the set of parameters for the maintenance recovery operation; and receive through the user interface an indication of a user-selected value for the one or more parameters.

11. The substrate processing system according to claim 9, wherein the user input includes an indication for the maintenance recovery operation for the transfer chamber to be performed according to the set of parameters preconfigured for the maintenance recovery operation.

12. The substrate processing system according to claim 9, wherein: the set of parameters further includes a switching point pressure; the substrate processing system further includes: a slow roughing valve between the vacuum pump and the one or more load lock chambers; and a fast roughing valve between the vacuum pump and the one or more load lock chambers; and the controller is further configured to: indicate the slow roughing valve to open; and in response to identifying that the switching point pressure has been met after operating the vacuum pump to remove gas from the transfer chamber through the slow roughing valve, indicate the fast roughing valve to open.

13. The substrate processing system according to claim 9, wherein: the set of parameters further includes a base duration; the substrate processing system further includes a purge valve that fluidly connects the one or more load lock chambers to a source of the purge gas; and the controller is further configured to: operate the vacuum pump for at least the base duration based at least in part on operating the vacuum pump according to the base pressure; and After the base duration, direct the purge valve to open to direct the purge gas from the source of the purge gas through the one or more load lock chambers to the transfer chamber.

14. The substrate processing system of claim 9, wherein: the set of parameters further includes load lock chamber selection; the one or more load lock chambers include: a first load lock chamber coupled to the transfer chamber; a first slow roughing valve fluidly connecting the vacuum pump to the first load lock chamber; a second load lock chamber coupled to the transfer chamber; a second slow roughing valve fluidly connecting the vacuum pump to the first load lock chamber; and the controller is further configured to select the first slow roughing valve to open from the first slow roughing valve and the second slow roughing valve in response to the load lock chamber selection.

15. The substrate processing system of claim 9, wherein: the substrate processing system further includes an oxygen sensor coupled to the transfer chamber; and the controller is further configured to: receive a signal from the oxygen sensor indicating the oxygen level in the transfer chamber; and determine the number of pump purge cycles at least in part based on the oxygen level.

16. A non-transitory computer-readable medium for performing a maintenance recovery operation on a transfer chamber of a substrate processing system, the non-transitory computer-readable medium including instructions that, when executed, cause a plurality of operations to be performed, the plurality of operations including: receiving user input through a user interface, the user input indicating that the substrate processing system performs a maintenance recovery operation on the transfer chamber according to a set of parameters including a base pressure and a backfill pressure; for each of a number of pump purge cycles, operating a vacuum pump according to the base pressure for the transfer chamber to reduce the amount of gas in the transfer chamber; for each of the number of pump purge cycles and after operating the vacuum pump, directing a purge gas to the transfer chamber according to the backfill pressure; after completing the number of cycles, directing the purge gas to the transfer chamber until a threshold pressure is met; and displaying an indication through the user interface that the maintenance recovery operation of the transfer chamber has been completed.

17. The non-transitory computer-readable medium of claim 16, wherein the plurality of operations further include: displaying through the user interface suggested values for one or more of the parameters in the set of parameters for the maintenance recovery operation; and receiving through the user interface an indication of a user-selected value for the one or more parameters.

18. The system of claim 16, wherein the user input includes an indication for the maintenance recovery operation for the transfer chamber to be performed according to the set of parameters pre-configured for the maintenance recovery operation.

19. The non-transitory computer-readable medium of claim 16, wherein the set of parameters further includes a switching point pressure, and the plurality of operations further Comprising: Indicating that the slow roughing valve is opened; And In response to identifying that the switching point pressure has been satisfied after operating the vacuum pump to remove gas from the transfer chamber through the slow roughing valve, indicating that the fast roughing valve is opened.

20. The non-transitory computer-readable medium according to claim 19, wherein the set of parameters further includes a base duration, and the plurality of operations further Comprising: Operating the vacuum pump for at least the base duration based at least in part on operating the vacuum pump according to the base pressure; And After the base duration, guiding the purge valve to open to direct the purge gas through the load lock chamber to the transfer chamber, Wherein the switching point pressure is 200 Torr, the base pressure is less than 200 Torr, the base duration is at least 5 seconds, and the backfill pressure is in the range of 500 Torr to 770 Torr.