Crystal growth temperature control method and related device
By acquiring image data and analyzing the aperture thickness ratio during crystal growth, real-time and efficient temperature control was achieved, solving the problem of inaccurate temperature control during crystal growth and improving the uniformity and quality of the crystal.
Patent Information
- Application Number
- CN202512036135.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-30
- Publication Date
- 2026-02-06
AI Technical Summary
In existing technologies, temperature control during crystal growth is not real-time or precise enough, resulting in uneven crystal quality, defects, and high defect density.
By acquiring image data during the crystal growth process, the aperture image is extracted and the aperture thickness ratio is calculated. Based on this ratio, the temperature is controlled to achieve real-time and efficient temperature control.
It improves the uniformity of crystal growth, reduces crystal defects, enhances crystal quality, lowers costs, and strengthens anti-interference capabilities.
Smart Images
Figure CN121473009A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of crystal growth, in particular to a temperature control method and related device. BACKGROUND
[0002] Temperature is a core control parameter in the process of crystal growth, which directly affects the crystal quality, growth rate and defect density.
[0003] In the related art, the temperature in the process of crystal generation can be measured by a common camera, that is, by extracting the gray value of the melt image to indirectly measure the temperature, but such a method is easily affected by volatile substances and needs to be calibrated frequently, resulting in a large temperature measurement deviation; the liquid surface temperature can also be roughly estimated by the process experience of process personnel to adjust the heating power, but the process personnel judge the temperature by the state of the aperture, but such experience is very subjective and cannot be quantified and popularized.
[0004] Therefore, there is an urgent need for a temperature control method to control the temperature in the process of crystal growth in real time and efficiently. SUMMARY
[0005] Therefore, the present application provides a temperature control method for crystal growth and related device, which can control the temperature in the process of crystal growth in real time and efficiently based on the aperture thickness by acquiring image data and aperture thickness in the process of crystal growth.
[0006] To solve the above problems, the technical solutions provided by the present application are as follows:
[0007] In one aspect, the present application provides a temperature control method for crystal growth, which comprises:
[0008] acquiring image data in the process of crystal growth;
[0009] extracting an aperture image from the image data, the aperture image being used to identify a bright ring formed at the junction of a solid crystal and a liquid melt;
[0010] acquiring a plurality of aperture thicknesses at a plurality of positions in the aperture image, the aperture thickness being used to identify the distance between the inner ring and the outer ring of the aperture;
[0011] controlling the temperature in the process of crystal growth based on the ratio of the number of aperture thicknesses exceeding a preset threshold to the total number of aperture thicknesses.
[0012] In one possible implementation, the acquiring a plurality of aperture thicknesses at a plurality of positions in the aperture image comprises:
[0013] fitting the aperture image to obtain a first ellipse corresponding to the inner ring of the aperture and a second ellipse corresponding to the outer ring of the aperture;
[0014] respectively taking the center points of the first ellipse and the second ellipse as starting points, drawing a plurality of rays outward at fixed angle intervals to obtain a plurality of first intersection points between the rays and the boundary of the first ellipse and a plurality of second intersection points between the rays and the boundary of the second ellipse at different angles;
[0015] determining a plurality of aperture thicknesses at different angles based on the plurality of first intersection points and the plurality of second intersection points.
[0016] In a possible implementation, the controlling the temperature in the crystal growth process based on the ratio of the number of the plurality of aperture thicknesses exceeding the preset threshold to the total number of the plurality of aperture thicknesses includes:
[0017] determining the ratio of the number of the plurality of aperture thicknesses exceeding the preset threshold to the total number of the plurality of aperture thicknesses;
[0018] when the ratio is greater than a first threshold, reducing the temperature in the crystal growth process;
[0019] when the ratio is less than a second threshold, increasing the temperature.
[0020] In a possible implementation, the crystal growth process includes a plurality of processes, and the first threshold and the second threshold corresponding to each process of the plurality of processes are different.
[0021] In a possible implementation, the temperature is determined by a crystal growth furnace, and the preset threshold corresponding to different types of the crystal growth furnace is different.
[0022] In another aspect, the present application provides a temperature control device for crystal growth, which includes a first acquisition unit, an extraction unit, a second acquisition unit, and a control unit:
[0023] the acquisition unit is configured to acquire image data in a crystal growth process;
[0024] the extraction unit is configured to extract an aperture image from the image data, the aperture image being used to identify a bright ring formed at the junction of a solid crystal and a liquid melt;
[0025] the second acquisition unit is configured to acquire a plurality of aperture thicknesses at a plurality of positions in the aperture image, the aperture thickness being used to identify the distance between the inner ring and the outer ring of the aperture;
[0026] The control unit is configured to control the temperature in the crystal growth process based on a ratio of a number of the plurality of aperture thicknesses that exceeds a preset threshold to a number of the plurality of aperture thicknesses.
[0027] In a possible implementation, the second obtaining unit is specifically configured to:
[0028] fit the aperture image to obtain a first ellipse corresponding to the inner ring of the aperture and a second ellipse corresponding to the outer ring of the aperture;
[0029] draw a plurality of rays outward at a fixed angle respectively from a center point of the first ellipse and the second ellipse to obtain a plurality of first intersection points between the rays and boundaries of the first ellipse and a plurality of second intersection points between the rays and boundaries of the second ellipse at different angles;
[0030] determine a plurality of aperture thicknesses at different angles based on the plurality of first intersection points and the plurality of second intersection points.
[0031] In a possible implementation, the control unit is specifically configured to:
[0032] determine a ratio of a number of the plurality of aperture thicknesses that exceeds a preset threshold to a total number of the plurality of aperture thicknesses;
[0033] when the ratio is greater than a first threshold, reduce the temperature in the crystal growth process;
[0034] when the ratio is less than a second threshold, increase the temperature.
[0035] In a possible implementation, the crystal growth process includes a plurality of procedures, and the first threshold and the second threshold corresponding to each procedure of the plurality of procedures are different.
[0036] In a possible implementation, the temperature is determined by a temperature of a crystal growth furnace, and the preset threshold corresponding to different types of the crystal growth furnace is different.
[0037] In another aspect, the present application provides a computer device, which comprises a processor and a memory:
[0038] The memory is configured to store a computer program.
[0039] The processor is configured to execute the method according to the computer program.
[0040] In yet another aspect, the present application provides a computer readable storage medium for storing a computer program, which, when executed by a computer device, implements any of the above-mentioned methods.
[0041] In yet another aspect, the present application provides a computer program product comprising a computer program which, when executed on a computer device, causes the computer device to perform any of the above-mentioned methods.
[0042] From the above technical solution, it can be seen that the technical solution first acquires image data in the crystal growth process, then extracts the aperture image from the image data, and then acquires a plurality of aperture thicknesses corresponding to a plurality of positions in the aperture image at a fixed angle. Then, based on the ratio of the number of aperture thicknesses exceeding the preset threshold to the total number of apertures corresponding to the plurality of aperture thicknesses, the temperature is controlled. Thus, by analyzing the image of the aperture part of the crystal surface, it can be determined whether the number of aperture thicknesses exceeding the preset threshold is too much or too little. Based on this, it is determined whether the single crystal is growing uniformly and whether the temperature is appropriate. Compared with the way of judging the temperature by grayscale, not only the cost is low, but also the anti-interference ability is strong, and accurate temperature information can be obtained. Then, by controlling the temperature in the crystal growth process, the crystal can grow uniformly, thereby avoiding crystal defects and improving the quality of the crystal. BRIEF DESCRIPTION OF DRAWINGS
[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed in the embodiments or prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments described in the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.
[0044] Figure 1 A flowchart of a crystal growth temperature control method provided by an embodiment of the present application;
[0045] Figure 2 A schematic diagram of an aperture image provided by an embodiment of the present application;
[0046] Figure 3 A schematic diagram of acquiring a plurality of aperture thicknesses provided by an embodiment of the present application;
[0047] Figure 4 A flowchart of another crystal growth temperature control method provided by an embodiment of the present application;
[0048] Figure 5 A schematic diagram of a crystal growth temperature control device provided by an embodiment of the present application. Detailed Implementation
[0049] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of the present application.
[0050] As described in the background section, temperature control is crucial during crystal growth. Excessive temperature during gallium antimonide single crystal growth can cause:
[0051] (1) Antimony volatilization is intensified. The dissociation pressure of antimony in gallium antimonide melt is high. Excessive temperature will cause excessive volatilization of antimony, which will destroy the stoichiometry of gallium and cause crystal defects (such as dislocations) or even polycrystallineization.
[0052] (2) Increased thermal stress and increased temperature difference between the melt and the seed crystal at high temperatures may lead to stress concentration inside the ingot and reduce mechanical strength.
[0053] (3) Uncontrolled growth rate: an excessively high temperature gradient will accelerate crystal growth, but may lead to lattice distortion due to uneven solidification.
[0054] Low temperatures can cause:
[0055] (1) Decreased melt fluidity: When the temperature is insufficient, the melt viscosity increases, which affects the uniform wetting of the seed crystal and the stability of crystal growth.
[0056] (2) Uneven solidification interface: Low temperature may lead to increased supercooling at the solid-liquid interface, forming non-uniform nucleation and producing inclusions or microcracks.
[0057] In related technologies, the temperature during crystal growth can be measured in the following ways:
[0058] (1) Temperature measurement with a conventional camera: Temperature is usually measured indirectly by extracting the grayscale value of the molten liquid image. However, volatile substances can easily affect the imaging, resulting in a large deviation in the measured temperature. Furthermore, the mapping relationship between grayscale and temperature needs to be calibrated, which increases the cost.
[0059] (2) High-precision infrared thermometer temperature measurement: The surface temperature of the melt is measured by infrared radiation, but this method is affected by the oxide layer or volatiles on the surface of the melt, requires regular calibration, and is expensive.
[0060] (3) Thermocouple temperature measurement method: Platinum-rhodium (S type) or tungsten-rhenium (W type) thermocouples are used to directly contact the melt or crucible wall. Contact measurement may contaminate the melt or damage the sensor. It is easy to oxidize at high temperatures and has a short lifespan (requiring frequent replacement).
[0061] (4) Process engineers use their experience to roughly estimate the liquid surface temperature and adjust the power accordingly. However, they judge the temperature by the state of the aperture, but this experience is very subjective and cannot be quantified or promoted. Different growth methods or different types of single crystal furnaces have different performance at the same temperature due to differences in heating and heat dissipation efficiency. Therefore, after obtaining the absolute temperature, process engineers still need to adjust the power according to the crystallization state of the crystal, which is time-consuming and laborious.
[0062] This patent uses image segmentation technology to extract images of the aperture portion of the crystal surface, analyzes the state of the aperture to determine the temperature of the melt during crystal formation, thereby compensating for the deficiencies of ordinary CCD camera temperature measurement and improving the accuracy of temperature measurement.
[0063] This application provides a temperature control method for crystal growth. By analyzing the image of the aperture portion on the crystal surface, it is possible to determine whether the number of aperture thicknesses exceeding a preset threshold is too large or too small. Based on this, it is determined whether the single crystal is growing uniformly and whether the temperature is appropriate. Compared with the method of judging temperature by grayscale, this method is not only low in cost but also has strong anti-interference ability and can obtain accurate temperature information. Therefore, by controlling the temperature during the crystal growth process, the crystal can grow uniformly, thereby avoiding crystal defects and improving the quality of the crystal.
[0064] The solutions provided in this application relate to the field of crystal growth technology. It should be noted that the technical solutions of this application can be applied to scenarios involving temperature control during crystal growth, or to other similar scenarios. This application does not impose specific limitations on its specific implementation scenarios or application scope. The technical solutions of this application are described below through the following embodiments.
[0065] See Figure 1 The diagram shown is a schematic flowchart of a temperature control method for crystal growth provided in an embodiment of this application. In this embodiment, it can be executed by a computer device.
[0066] S101: Acquire image data during the crystal growth process.
[0067] Image data of the crystal growth process can be acquired using a camera (such as a CCD camera). This image data includes image information of the crystal and its surrounding environment. The crystal can be single-crystal silicon, gallium antimonide single crystal, gallium nitride, etc., and different growth methods can be used, such as Czochralski method, zone melting method, etc., which are not specifically limited in this application.
[0068] S102: segment the image data to obtain an aperture image.
[0069] The aperture image is used to identify a bright ring formed at the junction of the solid crystal and the liquid melt. When the aperture is relatively uniform, it represents that the morphology of the crystal is also relatively uniform. Therefore, the state of the aperture can be directly used to determine whether the current temperature is suitable.
[0070] In order to avoid the interference of irrelevant information, the aperture image needs to be extracted from the image data. For example, the image data can be segmented by image segmentation technology to obtain the aperture image.
[0071] In the embodiments of the present application, in order to further improve the accuracy of the aperture image, a plurality of real image data in the crystal growth process can be collected in advance, and then the aperture image is manually labeled to construct training data, and then the image segmentation model is trained by using the training data to improve the accuracy of the image segmentation model.
[0072] For example, 10000 shoulder process image data and 10000 equal diameter process image data can be collected in advance to construct training data, and the image segmentation model is trained, and then the model is used for segmentation of the crystal aperture region. Figure 2 As shown in the figure, the aperture image provided by the embodiments of the present application is shown.
[0073] S103: In the aperture image, a plurality of aperture thicknesses at a plurality of positions are obtained.
[0074] The aperture thickness is used to identify the distance between the inner ring and the outer ring of the aperture. When the aperture thickness at a plurality of positions is the same, it represents that the crystal growth is very uniform, and it also indicates that the current temperature is very suitable, and the temperature does not need to be controlled.
[0075] When the aperture thickness at a plurality of positions is different, it represents that the crystal production is not uniform, and the temperature needs to be controlled to make the crystal grow uniformly.
[0076] Through the aperture image, the distance between the inner ring and the outer ring of the aperture at a plurality of positions can be measured to obtain a plurality of aperture thicknesses.
[0077] In a possible implementation, S103 includes:
[0078] A1: fitting the aperture image to obtain a first ellipse corresponding to the inner ring of the aperture and a second ellipse corresponding to the outer ring of the aperture.
[0079] A2: respectively taking the center points of the first ellipse and the second ellipse as the starting points, and drawing a plurality of rays outward at a fixed angle interval to obtain a plurality of first intersection points between the rays and the boundary of the first ellipse and a plurality of second intersection points between the rays and the boundary of the second ellipse at different angles.
[0080] A3: determining a plurality of aperture thicknesses at different angles based on the plurality of first intersection points and the plurality of second intersection points.
[0081] Reference Figure 3 As shown in the figure, the embodiment of the present application provides a schematic diagram for obtaining a plurality of aperture thicknesses.
[0082] Specifically, according to the edge pixel points of the inner ring and the outer ring of the aperture part, an ellipse fitting is performed to obtain a first ellipse and a second ellipse, and the center points of the first ellipse and the second ellipse are consistent.
[0083] Then, taking the ellipse center point as the starting point and the long axis direction of the ellipse as the starting direction, two rays are drawn to the boundaries of the two ellipses respectively to obtain two intersection points and pixel coordinates, and then the distance between the two intersection points is solved based on the pixel coordinates, which is the aperture thickness in the long axis direction.
[0084] Then, according to the plane where the ellipse is located, two rays are drawn to the boundaries of the two ellipses at every fixed angle (for example, 10°), and a plurality of aperture thicknesses at different angles are obtained in the above manner, and if there is no intersection point, the aperture thickness is 0.
[0085] Therefore, the inner ring and the outer ring of the aperture are respectively fitted as ellipses, then rays are emitted outward at a fixed angle interval based on the center of the ellipse, and the aperture thickness is obtained based on the intersection points of the rays and the two ellipses, which can more quickly and accurately obtain the aperture thickness data, and the position distribution of the aperture thickness identification is uniform, based on which the crystal can be more accurately judged whether it is growing uniformly.
[0086] S104: controlling the temperature in the crystal growth process based on the ratio of the number of the plurality of aperture thicknesses exceeding the preset threshold value to the total number of the plurality of aperture thicknesses.
[0087] The preset threshold value can be set by artificial experience or set by a dynamic threshold based on the aperture thickness at a suitable temperature, and the present application does not make any limitation on this.
[0088] Since different single crystal furnaces have different heating and heat dissipation efficiencies, the same temperature may not be fully reflected, in a possible implementation, the temperature is determined by the temperature of the crystal growth furnace, and the preset threshold value corresponding to different types of crystal growth furnaces is different.
[0089] Therefore, the influence of temperature on single crystal growth can be more accurately measured, and the temperature can be controlled.
[0090] Specifically, when the ratio of the number of apertures with a thickness greater than the preset threshold to the total number of apertures reaches a certain threshold (for example, 50%), it represents that the current temperature is suitable, and temperature regulation is not required, or when the ratio exceeds the preset threshold range, it represents that the current temperature is too high or too low, and temperature control is required to enable uniform growth of the crystal.
[0091] Therefore, by analyzing the images of the aperture portions on the crystal surface, it can be determined whether the number of apertures with a thickness greater than the preset threshold is too large or too small, and based on this, it can be determined whether the single crystal is growing uniformly and whether the temperature is suitable. Compared with the way of judging the temperature by grayscale, the cost is low, the anti-interference ability is strong, accurate temperature information can be obtained, and by controlling the temperature during the crystal growth process, the crystal can be grown uniformly, thereby avoiding crystal defects and improving the quality of the crystal.
[0092] In a possible implementation, S104 includes:
[0093] B1: determining a ratio of a number of apertures with a thickness greater than a preset threshold to a total number of the plurality of apertures.
[0094] B2: when the ratio is greater than a first threshold, reducing the temperature during the crystal growth process.
[0095] B3: when the ratio is less than a second threshold, increasing the temperature.
[0096] The first preset threshold is greater than the second preset threshold, which can be set according to actual conditions.
[0097] Specifically, it is determined whether each aperture thickness in the plurality of aperture thicknesses exceeds the preset threshold, and when the preset threshold is exceeded, the number of apertures exceeding the preset threshold is counted, and then a ratio of the number to the total number of the plurality of aperture thicknesses is obtained. When the ratio is greater than a first preset threshold, it represents that the current temperature is too high, and then the temperature during the crystal growth process is reduced by reducing the heating efficiency. When the ratio is less than the first preset threshold, it represents that the current temperature is too low, and then the temperature is increased by increasing the heating efficiency.
[0098] As an example, when the ratio is greater than the first preset threshold, it is determined that the current temperature is X ℃, which is higher than the temperature Y ℃ corresponding to the first preset threshold, and the temperature is reduced.
[0099] It should be noted that in actual scenarios, the ratio in a fixed time period obtained by real-time acquisition of corresponding image data is unstable, and therefore a fixed value can be obtained as the ratio corresponding to the time period by mean filtering processing, and then the temperature is controlled based on the temperature corresponding to the ratio, so that the temperature can be controlled at a certain time interval, thereby avoiding the influence of errors in image data acquisition and calculation on the control result.
[0100] In a possible implementation, the crystal growth process includes a plurality of procedures, and the first threshold value and the second threshold value corresponding to each procedure of the plurality of procedures are different.
[0101] Since the crystal performance (i.e., the aperture state) at different temperatures is different under different procedures, the strictness of temperature control is different under different procedures, and therefore, different first preset threshold values and second preset threshold values are set for different procedures, which can better adapt to the requirements of real scenarios.
[0102] For example, for gallium antimonide single crystal growth, the procedures include a shoulder growth procedure and an equal diameter growth procedure, for the shoulder growth procedure, the first preset threshold value is set to 0.5, and the second preset threshold value is set to 0.15, and for the equal diameter growth procedure, the first preset threshold value is set to 0.7, and the second preset threshold value is set to 0.3.
[0103] Therefore, the ratio can directly determine whether the temperature is too high or too low, and then effectively control the temperature.
[0104] In order to more clearly describe the temperature control method of the crystal growth, refer to Figure 4 Fig. 4 is a flow diagram of another temperature control method of crystal growth provided by an embodiment of the present application, first, image data is collected by a CCD camera, then a segmented aperture image is obtained by an image segmentation model, then aperture region pixels are extracted and elliptical fitting is performed to obtain a plurality of aperture thicknesses, then the aperture state is analyzed according to the corresponding procedure to realize heating power control.
[0105] Therefore, in the embodiment of the present application, based on the direct relationship between temperature and crystal formation effect, whether the temperature is suitable is determined by the aperture state, and then temperature control is performed, the process experience is quantized and suitable for promotion, the control accuracy and efficiency are effectively improved, and the temperature monitoring cost is low, without complex sensors, effectively saving manpower and material resources.
[0106] On the basis of the above-mentioned embodiments, the present application provides a temperature control device for crystal growth, refer to Figure 5 Fig. 5 is a schematic diagram of a temperature control device for crystal growth provided by an embodiment of the present application, the device 500 includes a first acquisition unit 501, an extraction unit 502, a second acquisition unit 503, and a control unit 504:
[0107] The acquisition unit is configured to acquire image data in a crystal growth process.
[0108] The extraction unit is configured to extract an aperture image from the image data, and the aperture image is used to identify a bright ring formed at an interface between a solid crystal and a liquid melt.
[0109] The second acquisition unit is configured to acquire a plurality of aperture thicknesses at a plurality of positions in the aperture image, the aperture thickness being used to identify a distance between an inner ring and an outer ring of an aperture.
[0110] The control unit is configured to control a temperature in the crystal growth process based on a ratio of a number of the plurality of aperture thicknesses that exceeds a preset threshold to a number of the plurality of aperture thicknesses.
[0111] In a possible implementation, the second acquisition unit is specifically configured to:
[0112] fit the aperture image to obtain a first ellipse corresponding to the inner ring of the aperture and a second ellipse corresponding to the outer ring of the aperture;
[0113] draw a plurality of rays outward at a fixed angle respectively from a center point of the first ellipse and the second ellipse to obtain a plurality of first intersection points between the rays and a boundary of the first ellipse and a plurality of second intersection points between the rays and a boundary of the second ellipse at different angles;
[0114] determine a plurality of aperture thicknesses at different angles based on the plurality of first intersection points and the plurality of second intersection points.
[0115] In a possible implementation, the control unit is specifically configured to:
[0116] determine a ratio of a number of the plurality of aperture thicknesses that exceeds a preset threshold to a total number of the plurality of aperture thicknesses;
[0117] when the ratio is greater than a first threshold, reduce a temperature in the crystal growth process;
[0118] when the ratio is less than a second threshold, increase the temperature.
[0119] In a possible implementation, the crystal growth process includes a plurality of processes, and the first threshold and the second threshold corresponding to each process of the plurality of processes are different.
[0120] In a possible implementation, the temperature is determined by a temperature of a crystal growth furnace, and the preset threshold corresponding to different types of the crystal growth furnace is different.
[0121] On the basis of the above-mentioned embodiments, the embodiments of the present application provide a computer device, which comprises a processor and a memory:
[0122] The memory is configured to store a computer program.
[0123] The processor is configured to execute the above-mentioned temperature control method for crystal growth according to the computer program.
[0124] On the basis of the above-mentioned embodiments, the embodiments of the present application provide a computer readable storage medium for storing a computer program, which, when executed by a computer device, implements the temperature control method for crystal growth.
[0125] On the basis of the above-mentioned embodiments, the embodiments of the present application provide a computer program product comprising a computer program which, when executed on a computer device, causes the computer device to perform the temperature control method for crystal growth.
[0126] It should be noted that the embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts of each embodiment can be mutually referred to. For the system or device disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple, and the relevant parts can be referred to the method part.
[0127] The above description of the disclosed embodiments enables a person skilled in the art to implement or use the present application. Various modifications to the embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A temperature control method for crystal growth, characterized by, The method comprises: acquiring image data in a crystal growth process; extracting a light ring image from the image data, the light ring image being used to identify a bright light ring formed at an interface between a solid crystal and a liquid melt; acquiring a plurality of light ring thicknesses at a plurality of positions in the light ring image, the light ring thickness being used to identify a distance between an inner ring and an outer ring of the light ring; controlling a temperature in the crystal growth process based on a ratio of a number of the plurality of light ring thicknesses exceeding a preset threshold to a total number of the plurality of light ring thicknesses.
2. The method of claim 1, wherein, The acquiring a plurality of light ring thicknesses at a plurality of positions in the light ring image comprises: fitting the light ring image to obtain a first ellipse corresponding to the inner ring of the light ring and a second ellipse corresponding to the outer ring of the light ring; drawing a plurality of rays outward at fixed angle intervals from center points of the first ellipse and the second ellipse respectively to obtain a plurality of first intersection points between the rays and boundaries of the first ellipse and a plurality of second intersection points between the rays and boundaries of the second ellipse at different angles; and determining a plurality of light ring thicknesses at different angles based on the plurality of first intersection points and the plurality of second intersection points.
3. The method of claim 1, wherein, The controlling the temperature in the crystal growth process based on the ratio of the number of the plurality of light ring thicknesses exceeding the preset threshold to the total number of the plurality of light ring thicknesses comprises: determining the ratio of the number of the plurality of light ring thicknesses exceeding the preset threshold to the total number of the plurality of light ring thicknesses; when the ratio is greater than a first threshold, reducing the temperature in the crystal growth process; and when the ratio is less than a second threshold, increasing the temperature.
4. The method of claim 3, wherein, The crystal growth process comprises a plurality of processes, and the first threshold and the second threshold corresponding to each of the plurality of processes are different.
5. The method of claim 1, wherein, The temperature is determined by a temperature of a crystal growth furnace, and the preset threshold corresponding to different types of the crystal growth furnace is different.
6. A temperature control apparatus for crystal growth, characterized by comprising: The apparatus comprises a first acquiring unit, an extracting unit, a second acquiring unit, and a controlling unit: the acquiring unit is configured to acquire image data in a crystal growth process; the extracting unit is configured to extract a light ring image from the image data, the light ring image being used to identify a bright light ring formed at an interface between a solid crystal and a liquid melt; the second acquiring unit is configured to acquire a plurality of light ring thicknesses at a plurality of positions in the light ring image, the light ring thickness being used to identify a distance between an inner ring and an outer ring of the light ring; and the controlling unit is configured to control a temperature in the crystal growth process based on a ratio of a number of the plurality of light ring thicknesses exceeding a preset threshold to a total number of the plurality of light ring thicknesses.
7. The apparatus of claim 6, wherein, The second acquiring unit is specifically configured to: fit the light ring image to obtain a first ellipse corresponding to the inner ring of the light ring and a second ellipse corresponding to the outer ring of the light ring; draw a plurality of rays outward at fixed angles from center points of the first ellipse and the second ellipse respectively to obtain a plurality of first intersection points between the rays and boundaries of the first ellipse and a plurality of second intersection points between the rays and boundaries of the second ellipse at different angles; and Determine a plurality of aperture thicknesses at different angles based on the plurality of first intersection points and the plurality of second intersection points.
8. A computer device, comprising: The computer device comprises a processor and a memory: The memory is configured to store a computer program; The processor is configured to execute the method according to any one of claims 1-5 based on the computer program.
9. A computer-readable storage medium, characterized in that, The computer readable storage medium is configured to store a computer program, which, when executed by a computer device, implements the method according to any one of claims 1-5.
10. A computer program product comprising a computer program, characterised in that, When it runs on a computer device, it makes the computer device execute the method according to any one of claims 1-5.