Substrate support and plasma processing apparatus

Abstract

A substrate support includes a support body, a base, and a ceramic member. The support body is configured to support an object thereon. The object includes a substrate. The support body has a dielectric part and an electrode. The support body provides a first through hole penetrating from the upper surface of the dielectric part to the lower surface of the dielectric part. The base provides a second through hole communicating with the first through hole. The ceramic member has gas permeability through which the heat transfer gas can permeate. The upper end of the first through hole is filled with the ceramic member. The ceramic member is positioned such that the distance between the lower end thereof and the electrode is smaller than the distance between the upper end thereof and the electrode in the direction in which the central axis of the first through hole extends.

Description

Technical Field

[0001] Exemplary embodiments of the present invention relate to a substrate support and a plasma processing apparatus. Background Art

[0002] A plasma processing apparatus is used for plasma processing of a substrate. A plasma processing apparatus disclosed in Patent Document 1 below includes a chamber and a substrate support. The substrate support has an upper surface including a support surface on which a substrate can be placed above it. The substrate support provides a through hole configured to supply a heat transfer gas to a gap between the substrate placed on the support surface and the upper surface of the substrate support.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2019-220555 Summary of the Invention

[0006] Technical Problem to be Solved by the Invention

[0007] The present invention provides a technique for suppressing abnormal discharge in a substrate support.

[0008] Means for Solving the Technical Problem

[0009] In one exemplary embodiment, the substrate support includes a support body, a base, and a ceramic component. The support body is configured to support an object above it. The object includes a substrate. The support body has a dielectric portion and an electrode. The dielectric portion includes an upper surface and a lower surface opposite to the upper surface. The upper surface includes a support surface facing the object. The support body provides a first through hole penetrating from the upper surface of the dielectric portion to the lower surface of the dielectric portion. The base provides a second through hole communicating with the first through hole. The base is configured to support the support body above it. The ceramic component has air permeability that allows a heat transfer gas to pass through. The ceramic component is filled at the upper end of the first through hole. The ceramic component is positioned such that the distance between its lower end and the electrode is smaller than the distance between its upper end and the electrode in the direction in which the central axis of the first through hole extends.

[0010] Advantageous Effects of the Invention

[0011] According to one exemplary embodiment, abnormal discharge in the substrate support is suppressed. Brief Description of the Drawings

[0012] Figure 1 is a block diagram of a computer-based system that functions as a control unit of a plasma processing apparatus according to one exemplary embodiment.

[0013] Figure 2 This is a diagram for explaining an example of the structure of a plasma processing system.

[0014] Figure 3 This is a diagram for explaining an example of the structure of a capacitively coupled plasma processing apparatus.

[0015] Figure 4 This is a partial enlarged cross-sectional view of a substrate support related to an exemplary embodiment.

[0016] Figure 5 This is a partial enlarged cross-sectional view of a substrate support related to an exemplary embodiment. Detailed Embodiment

[0017] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each drawing, the same or equivalent parts are denoted by the same reference numerals.

[0018] Figure 1 This is a block diagram of a computer-based system that functions as a control unit of a plasma processing apparatus related to an exemplary embodiment.

[0019] The control method of the present invention can be implemented as a system, a method, and / or a computer program product. The computer program product may include a computer-readable storage medium. Computer-readable program instructions for causing one or more processors to execute the method of the embodiment are stored in the storage medium.

[0020] The computer-readable storage medium may be a tangible device capable of storing instructions for use by an instruction execution device (processor). For example, the computer-readable storage medium may be an electronic storage device, a magnetic storage device, an optical storage device, an electromagnetic storage device, a semiconductor storage device, or any suitable combination of these devices, but is not limited to these. Although not fully enumerated, in a more specific list of examples of computer-readable storage media, floppy disks, hard disks, solid state drives (SSDs), random access memories (RAMs), read-only memories (ROMs), erasable programmable read-only memories (EPROMs or flash memories), static random access memories (SRAMs), optical discs (CDs or CD-ROMs), digital versatile discs (DVDs), and memory cards or memory sticks (and their suitable combinations) are included. The computer-readable storage medium referred to in the present invention should not be construed as being, for example, an electromagnetic wave such as a radio wave or other freely propagating electromagnetic wave, an electromagnetic wave propagating in a waveguide or other transmission medium (for example, an optical pulse passing through an optical fiber cable), or an electrical signal transmitted through a wire, which is itself a transient signal.

[0021] The computer-readable program instructions recorded in the present invention can be downloaded from a computer-readable storage medium to a suitable computer device or processing device, or downloaded to an external computer or external storage device via a global network (Internet), local area network, wide area network, and / or wireless network. The network may include copper transmission lines, optical communication fibers, wireless transmission, routers, firewalls, switches, gateway computers, and / or edge servers. The respective network adapter cards or network interfaces of the computer device or processing device can receive the computer-readable program instructions from the network and transmit the computer-readable program instructions to be stored in the computer-readable storage medium inside the computer device or processing device.

[0022] The computer-readable program instructions for performing the operations of the present invention may include machine language instructions and / or microcode. The machine language instructions and / or microcode may be compiled or translated from source code written in a combination of one or more programming languages including assembly language, Basic, Fortran, Java (registered trademark), Python, R, C, C++, C#, or the same programming language. All computer-readable program instructions can be executed on a user's personal computer, laptop, tablet, or smartphone, or on a remote computer or computer server, or on a combination of these computer devices. The remote computer or computer server can be connected to the user's device or multiple devices through a computer network such as a local area network, wide area network, or global network (Internet). In some embodiments, to perform the manner of the present invention, an electronic circuit including a programmable logic circuit, a field programmable gate array (FPGA), or a programmable logic array (PLA) can execute the computer-readable program instructions to set or customize the electronic circuit using the information from the computer-readable program instructions.

[0023] The embodiments of the present invention will be described with reference to the flowcharts and block diagrams of the methods, apparatuses (systems), and computer program products according to the embodiments of the present invention. Those skilled in the art should understand that each block in the flowcharts and block diagrams, and the combinations of blocks, can be implemented by computer-readable program instructions.

[0024] The computer-readable program instructions recorded in the present invention can be provided to one or more processors (and / or one or more cores within the processor) of a general-purpose computer, a special-purpose computer, or other programmable devices to endow them with mechanical functions. Thus, the instructions are executed by the processor of the computer or other programmable devices, so that a system capable of implementing the functions shown in the flowcharts and block diagrams of the present invention can be provided. These computer-readable program instructions can be stored in a computer-readable storage medium capable of instructing a computer, a programmable device, or other devices to function in a specific manner, so that the computer-readable storage medium storing the instructions becomes a manufactured article containing instructions for implementing the functional modes shown in the flowcharts and block diagrams of the present disclosure.

[0025] The computer-readable program instructions can be loaded into a computer, other programmable devices, or other devices so that the computer, other programmable devices, or other devices execute a series of operation steps, thereby realizing a computer implementation process. As a result, the instructions executed in the computer, other programmable devices, or other devices can implement the functions shown in the flowcharts and block diagrams of the present invention.

[0026] Figure 1 FIG. 800 is a functional block diagram showing a network system including one or more network computers and servers. In one embodiment, Figure 1 The hardware environment and software environment shown can provide an exemplary platform for implementing the software and / or methods involved in the present invention.

[0027] Reference Figure 1 , the network system 800 may include a computer 805, a network 810, a remote computer 815, a network server 820, a cloud storage server 825, and a computer server 830, but is not limited thereto. In some embodiments, multiple examples of one or more functional blocks shown can be used. Figure 1 Multiple examples of one or more functional blocks shown.

[0028] Figure 1 FIG. shows more details of the computer 805. The functional blocks shown within the computer 805 are only provided for constructing exemplary functions and do not mean to be comprehensive. Although the details of the remote computer 815, the network server 820, the cloud storage server 825, and the computer server 830 are not shown, these other computers and devices may include functions similar to those shown in the computer 805.

[0029] The computer 805 can be a personal computer (PC), a desktop computer, a laptop computer, a tablet computer, a netbook computer, a personal digital assistant (PDA), a smartphone, or other programmable electronic devices capable of communicating with other devices over the network 810.

[0030] The computer 805 may include a processor 835, a bus 837, a memory 840, a non-volatile storage device 845, a network interface 850, a peripheral interface 855, and a display interface 865. In some embodiments, these functions may be implemented as separate electronic subsystems (integrated circuit chips or combinations of chips and related devices), and in other embodiments, combinations of functions may be implemented on a single chip (sometimes referred to as a system-on-chip (SoC)).

[0031] The processor 835 may be one or more single-chip or multi-chip microprocessors designed and / or manufactured by Intel Corporation, Advanced Micro Devices, Inc. (AMD), Arm Holdings (Arm), Apple Inc., etc. As examples of microprocessors, there are: Celeron, Pentium (registered trademark), Core i3, Core i5, and Core i7 of Intel Corporation, Opteron, Phenom, Athlon, Turion, and Ryzen of AMD, and Cortex-A, Cortex-R, and Cortex-M of ARM.

[0032] The bus 837 may also be a dedicated standard or industry standard high-speed parallel interconnect bus or serial interconnect bus such as ISA, PCI, PCI Express (PCI-e), AGP.

[0033] The memory 840 and the non-volatile storage device 845 may be computer-readable storage media. In the memory 840, appropriate volatile storage devices such as dynamic random access memory (DRAM), static random access memory (SRAM), etc. may be included. In the non-volatile storage device 845, one or more of a floppy disk, a hard disk, a solid-state drive (SSD), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical disc (CD or CD-ROM), a digital versatile disc (DVD), and a memory card or storage stick may be included.

[0034] The program 848 may be a collection of machine-readable instructions and / or data stored in the non-volatile storage device 845 for creating, managing, and controlling the software functions described and illustrated in detail elsewhere in the present invention. In some embodiments, the memory 840 may be much faster than the non-volatile storage device 845. In such embodiments, the program 848 may be transferred from the non-volatile storage device 845 to the memory 840 before being executed by the processor 835.

[0035] The computer 805 can communicate and interact with other computers via the network interface 850 over the network 810. For example, the network 810 can be a local area network (LAN), a wide area network (WAN) such as the Internet, or a combination of both, and can include wired, wireless, or fiber-optic based connections. Generally, the network 810 can be any combination of connections or protocols that support communication between two or more computers or related devices.

[0036] The peripheral interface 855 can input and output data with other devices that are locally connected to the computer 805. For example, the peripheral interface 855 can provide a connection to an external device 860. The external device 860 can include devices such as a keyboard, a mouse, a keypad, a touch screen, and / or other suitable input devices. The external device 860 can also include portable computer-readable storage media such as a thumb drive, a portable optical disc, a portable magnetic disk, and a memory card. Software and data for implementing embodiments of the present invention, for example, the program 848 can be stored in the portable computer-readable storage media. In such an embodiment, the software can be loaded into the non-volatile storage device 845, or can also be directly loaded into the memory 840 via the peripheral interface 855. The peripheral interface 855 can be connected to the external device 860 using a connection such as RS-232 or Universal Serial Bus (USB) that is an industry standard.

[0037] The display interface 865 can connect the computer 805 to a display 870. In some embodiments, the display 870 can be used to display a command line or a graphical user interface to the user of the computer 805. The display interface 865 can be connected to the display 870 using one or more dedicated or industry standard connections such as VGA, DVI, DisplayPort, and HDMI (registered trademark).

[0038] As described above, the network interface 850 provides communication with other computer systems / devices and storage systems / devices external to the computer 805. The software programs and data described in this specification can be downloaded from remote computers 815, network servers 820, cloud storage servers 825, computer servers 830, etc. to the non-volatile storage device 845 via the network interface 850 and the network 810. In addition, the systems and methods described in the present invention can also be executed by one or more computers connected to the computer 805 via the network interface 850 and the network 810. For example, in some embodiments, the systems and methods in the present invention can be executed by a remote computer 815, a computer server 830, or a combination of interconnected computers on the network 810.

[0039] The data, data sets, and / or databases used in the embodiments of the systems and methods described in this invention may be stored in remote computer 815, network server 820, cloud storage server 825, and computer server 830, or may also be downloaded from them.

[0040] The circuits used in this application can be defined as one or more of electronic components (such as semiconductor components), multiple components directly connected to each other or connected to each other through electronic communication, computers, networks of computer devices, remote computers, network servers, cloud storage servers, and computer servers. For example, each of one or more of a computer, remote computer, network server, cloud storage server, and computer server can be included in the circuit, or can include the circuit as its component. In some embodiments, multiple examples of one or more of these components can be used, and in this case, each of the multiple examples of one or more of these components can be included in the circuit, or the circuit can be included in these. In some embodiments, a circuit represented by a network system can include a serverless computer system that supports a virtual group of multiple hardware resources. A circuit represented by a computer can include a personal computer (PC), desktop computer, laptop computer, tablet computer, netbook computer, personal digital assistant (PDA), smart phone, and other programmable devices that can communicate with other devices on the network. The circuit can be a general-purpose computer, a special-purpose computer, or other programmable devices described in this specification having one or more processors. Each processor can be one or more single-chip or multi-chip microprocessors. Since the processor has transistors or other circuits, it is regarded as a processing circuit or a circuit. The circuit can implement the systems and methods of this invention according to computer-readable program instructions provided to endow one or more processors (and / or one or more cores within the processor) of one or more general-purpose computers, special-purpose computers, or other programmable devices described in this specification with mechanical functions, and thus the instructions are executed by one or more processors of the programmable device that includes or is included in the circuit, thereby providing a system for implementing the functions determined in the flowcharts and block diagrams of this invention. Alternatively, the circuit can be a pre-programmed structure such as a programmable logic device, application-specific integrated circuit, etc., and is regarded as a circuit whether used alone or in combination with other programmable or pre-programmed circuits.

[0041] Figure 2This is a diagram for explaining a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generation portion 12. The plasma processing chamber 10 has a plasma processing space. Further, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply portion 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support portion 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0042] The plasma generation portion 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-Resonance Plasma), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Also, various types of plasma generation portions including an AC (Alternating Current) plasma generation portion and a DC (Direct Current) plasma generation portion can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation portion has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0043] The control unit 2 processes computer-executable instructions for causing the plasma processing apparatus 1 to perform the various processes described in the present invention. The control unit 2 may be configured to control each component of the plasma processing apparatus 1 in such a manner as to perform the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. For example, the control unit 2 is implemented by a computer 2a. The processing unit 2a1 may be configured to read out a program from the storage unit 2a2 and execute the read-out program, thereby performing various control operations. The program may be pre-stored in the storage unit 2a2 or may be obtained via a medium when needed. The obtained program is stored in the storage unit 2a2 and read and executed by the processing unit 2a1 from the storage unit 2a2. The medium may be various storage media readable by the computer 2a or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may also be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0044] Hereinafter, a structural example of a capacitively coupled plasma processing apparatus, which is an example of the plasma processing apparatus 1, will be described. Figure 3 It is a diagram for explaining a structural example of a capacitively coupled plasma processing apparatus.

[0045] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Further, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a showerhead 13. The substrate support unit 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support unit 11. In one embodiment, the showerhead 13 forms at least a part of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support unit 11 are electrically insulated from the casing of the plasma processing chamber 10.

[0046] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. Further, the showerhead 13 includes at least one upper electrode. In addition, the gas introduction unit may include, in addition to the showerhead 13, one or more side gas injectors (SGIs) mounted in one or more openings formed in the sidewall 10a.

[0047] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one processing gas from their respective gas sources 21 to the showerhead 13 via their respective flow controllers 22. For example, each flow controller 22 may include a mass flow controller or a pressure control type flow controller. In addition, the gas supply unit 20 may include at least one flow regulating device for regulating or pulsing the flow rate of at least one processing gas.

[0048] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. Thereby, a plasma is formed from at least one processing gas supplied to the plasma processing space 10s. Accordingly, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Also, a bias RF signal is supplied to at least one lower electrode, thereby generating a bias potential on the substrate W, and the ion component in the formed plasma can be attracted to the substrate W.

[0049] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to generate a source RF signal (source RF power) for plasma generation by being coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a can be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0050] The second RF generation unit 31b is configured to generate a bias RF signal (bias RF power) by being coupled to at least one lower electrode via at least one impedance matching circuit. The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b can be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0051] Also, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generation unit 32a and a second DC generation unit 32b. In one embodiment, the first DC generation unit 32a is configured to generate a first DC signal by being connected to at least one lower electrode. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generation unit 32b is configured to generate a second DC signal by being connected to at least one upper electrode. The generated second DC signal is applied to at least one upper electrode.

[0052] In various embodiments, the first and second DC signals may be pulsed. At this time, a voltage pulse sequence is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generation unit for generating a voltage pulse sequence from a DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. In the case where the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. Also, the voltage pulse sequence may include one or more positive-polarity voltage pulses and one or more negative-polarity voltage pulses within one cycle. In addition, the first and second DC generation units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generation unit 32a may be provided instead of the second RF generation unit 31b.

[0053] For example, the exhaust system 40 may be connected to a gas discharge port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbo molecular pump, a dry pump, or a combination thereof.

[0054] Figure 4 and Figure 5 is a partially enlarged cross-sectional view of a substrate support related to an exemplary embodiment. Hereinafter, with reference to Figures 3 to 5 , the details of the substrate support 5 will be described.

[0055] The substrate support portion 11 includes the substrate support 5. The substrate support 5 includes a base 50 and a support 51. The support 51 is configured to support an object above it. The object includes a substrate W. A wafer is an example of the substrate W. The object may include a ring assembly 112.

[0056] The substrate support 5 has a central region 5a for supporting the substrate W and an annular region 5b for supporting the ring assembly 112. In a plan view, the annular region 5b of the substrate support 5 surrounds the central region 5a of the substrate support 5. The substrate W is disposed on the central region 5a of the substrate support 5, and the ring assembly 112 is disposed on the annular region 5b of the substrate support 5 so as to surround the substrate W on the central region 5a of the substrate support 5. Therefore, the upper surface of the central region 5a includes a substrate support surface for supporting the substrate W, and the upper surface of the annular region 5b includes a ring support surface for supporting the ring assembly 112.

[0057] Alternatively, other components surrounding the support 51, such as a ring-shaped support or a ring-shaped insulating member, may have a ring-shaped region 5b. In this case, the ring assembly 112 may be disposed on the ring-shaped support or the ring-shaped insulating member, or may be disposed on both the support 51 and the ring-shaped insulating member.

[0058] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0059] The support 51 is supported on the base 50. The base 50 may include a conductive component. The conductive component included in the base 50 may function as a lower electrode. The support 51 has a dielectric portion 51a and a bias electrode 51c (first electrode). The bias electrode 51c is disposed in the dielectric portion 51a. In one example, the support 51 is an electrostatic chuck.

[0060] The bias electrode 51c is electrically connected to the RF power supply 31 and / or the DC power supply 32. The bias electrode 51c may function as a lower electrode. A bias RF signal and / or a DC signal is supplied to the bias electrode 51c. The bias electrode 51c may be supplied with high-frequency power HF from the RF power supply 31, or may be supplied with high-frequency power LF from the RF power supply 31. In one example, the high-frequency power HF has a frequency in the range of 27 MHz or more and 100 MHz or less. In one example, the high-frequency power LF has a frequency in the range of 400 kHz or more and 13.56 MHz or less. The high-frequency power HF and the high-frequency power LF may be supplied to the bias electrode 51c simultaneously. The bias RF signal and / or the DC signal supplied to the bias electrode 51c may be a pulse wave.

[0061] In one embodiment, the support 51 may have an electrostatic electrode 51b (second electrode). The electrostatic electrode 51b is disposed in the dielectric portion 51a. In one example, the electrostatic electrode 51b may be disposed above the bias electrode 51c. The support 51 may include a plurality of electrostatic electrodes 51b. In Figure 4 the example shown, the support 51 includes a first electrostatic electrode 511 as the electrostatic electrode 51b in the central region 5a, and includes a second electrostatic electrode 512 and a third electrostatic electrode 513 as the electrostatic electrodes 51b in the ring-shaped region 5b. The second electrostatic electrode 512 is located between the first electrostatic electrode 511 and the third electrostatic electrode 513. The second electrostatic electrode 512 and the third electrostatic electrode 513 are used as a pair of electrodes of a bipolar electrostatic chuck. Alternatively, the support 51 may not have the electrostatic electrode 51b. The bias electrode 51c may function as an electrostatic electrode.

[0062] Further, the substrate support portion 11 may include a temperature adjustment module configured to adjust at least one of the support 51, the ring assembly 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 50a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 50a. In one embodiment, the flow path 50a is formed in the base 50, and one or more heaters are disposed in the dielectric portion 51a of the support 51. One or more heaters may be disposed below the bias electrode 51c.

[0063] Hereinafter, with reference to Figure 5 . The dielectric portion 51a includes an upper surface 51d and a lower surface 51e opposite to the upper surface 51d. The upper surface 51d includes a support surface. The support surface faces the substrate W (an example of an object). The support surface may include a substrate support surface in the central region 5a and a ring support surface in the annular region 5b. In one example, when a plurality of convex portions are formed on the surface of the central region 5a, the upper surface 51d includes the upper surfaces of the plurality of convex portions constituting the support surface (substrate support surface), the side surfaces of the plurality of convex portions, and the bottom surface between the plurality of convex portions.

[0064] The support 51 provides a first through hole 51h. The first through hole 51h penetrates from the upper surface 51d to the lower surface 51e. The first through hole 51h may include at least one fine hole 51f. At least one fine hole 51f is formed in the upper surface 51d. In one example, the number of at least one fine hole 51f is one or more and 30 or less. In one example, the diameter of at least one fine hole 51f is 0.1 mm or more and 0.5 mm or less. The length of at least one fine hole 51f is 0.1 mm or more and 1.0 mm or less. The base 50 provides a second through hole 50h. The second through hole communicates with the first through hole 51h. The central axis of the second through hole 50h may coincide with the central axis of the first through hole 51h.

[0065] The substrate support 5 includes a ceramic member 6. The ceramic member 6 has air permeability that allows a heat transfer gas to pass through. In one example, the heat transfer gas is helium. The ceramic member 6 is filled at the upper end of the first through hole 51h. The ceramic member 6 may face the portion of the dielectric portion 51a that provides at least one fine hole 51f. The ceramic member 6 may be filled to be connected to at least one fine hole 51f. The first through hole 51h is configured to supply a heat transfer gas to the gap between the substrate W placed on the support surface and the upper surface 51d. For example, the first through hole 51h is configured to supply a heat transfer gas to the gap between the ring assembly 112 placed on the support surface and the upper surface 51d via the ceramic member 6. The length of the ceramic member 6 in the direction in which the central axis of the first through hole 51h extends is 1 mm or more and 5 mm or less.

[0066] In the direction in which the central axis of the first through-hole 51h extends, the ceramic member 6 is positioned such that the distance t1 between the lower end thereof and the bias electrode 51c is smaller than the distance t2 between the upper end thereof and the bias electrode 51c. Since the space above the bias electrode 51c in the first through-hole 51h is filled with the ceramic member 6, abnormal discharge in the space within the first through-hole 51h is suppressed. Accordingly, abnormal discharge in the substrate support 5 can be suppressed. The shortest distance between the surface defining the first through-hole 51h and the bias electrode 51c may be 1.0 mm or less, or may be 2.0 mm or less.

[0067] In one embodiment, the lower end of the ceramic member 6 may be located above the bias electrode 51c. In one embodiment, when the lower end of the ceramic member 6 is located above the bias electrode 51c, the lower end of the ceramic member 6 may be located at a position separated from the bias electrode 51c by 0.1 mm or more in the direction in which the central axis of the first through-hole 51h extends. That is, the distance t1 between the lower end of the ceramic member 6 and the bias electrode 51c may be 0.1 mm or more. The distance t1 may be 0.1 mm or more and 4.0 mm or less. Since the total length of the ceramic member 6 in the direction in which the central axis of the first through-hole 51h extends can be shortened, the pressure loss of the heat transfer gas in the ceramic member 6 can be reduced.

[0068] In one embodiment, the ceramic member 6 may be a porous member or a multi-tube member provided with a plurality of through-holes penetrating from its upper end to its lower end. In Figure 5 the example shown, the ceramic member 6 is a porous member. In one embodiment, the proportion of the volume of all the pores in the volume of the porous member may be 40% or more. For example, the ceramic member is formed of alumina or silicon carbide.

[0069] In one embodiment, the substrate support 5 further includes an insulating member 7 (first insulating member). The insulating member 7 has insulating properties. In one example, the insulating member 7 is formed of alumina. The insulating member 7 may be formed of quartz. The insulating member 7 is disposed in the first through-hole 51h and the second through-hole 50h. The ceramic member 6 may be supported by the insulating member 7 without being bonded to the support 51. The insulating member 7 provides a third through-hole 7h connected to the ceramic member 6. The insulating member 7 may have a cylindrical shape. In one example, the diameter of the third through-hole is 1 mm or more and 3 mm or less. For example, the third through-hole 7h is configured to be able to supply a heat transfer gas to the ceramic member 6. A supply source of the heat transfer gas may be connected to the lower end of the third through-hole 7h. According to the insulating member 7, since the insulating member 7 is present in the second through-hole 50h, abnormal discharge in the second through-hole 50h is suppressed. Further, since the insulating member 7 is present in the first through-hole 51h, abnormal discharge in the first through-hole 51h is further suppressed.

[0070] In one embodiment, the substrate support 5 may further include an insulating member 71 (second insulating member). The insulating member 71 is disposed in the third through-hole 7h. The insulating member 71 provides a gap in the third through-hole 7h that is connected to the ceramic member 6. The gap in the third through-hole 7h that is connected to the ceramic member 6 is configured to allow a heat transfer gas to pass through the gap. In one example, the insulating member 71 is formed of a fluororesin. Due to the insulating member 71 being present in the third through-hole 7h, abnormal discharge in the third through-hole 7h is suppressed.

[0071] In one embodiment, the insulating member 71 provides a groove 71a that spirally extends around the central axis of the third through-hole on its surface. The gap in the third through-hole 7h that is connected to the ceramic member 6 is formed between the surface of the insulating member 71 that defines the groove 71a and the surface of the insulating member 7 that defines the third through-hole 7h. Additionally, the maximum width of the insulating member 71 may be smaller than the maximum width of the third through-hole 7h. In this case, even if the insulating member 71 does not provide the groove 71a, it can provide a gap in the third through-hole 7h that is connected to the ceramic member 6. The gap in the third through-hole 7h that is connected to the ceramic member 6 may be formed between the surface of the insulating member 71 and the surface of the insulating member 7 that defines the third through-hole 7h.

[0072] In one embodiment, the substrate support 5 further includes a first bonding material 52 and a second bonding material 52a. The first bonding material 52 is present between the support 51 and the base 50 and joins the support 51 and the base 50 to each other. The second bonding material 52a is present between the insulating member 7 and the support 51 in the first through-hole 51h and joins the insulating member 7 and the support 51 to each other. For example, the first bonding material 52 and the second bonding material 52a are each a cured adhesive. When the linear expansion coefficient of the support 51 is close to the linear expansion coefficient of the insulating member 7, peeling of the insulating member 7 from the support 51 can be suppressed.

[0073] In one embodiment, the maximum width of the second through-hole 50h is larger than the maximum width of the first through-hole 51h. In one example, the maximum width of the first through-hole 51h is 3 mm or more and 5 mm or less, and the maximum width of the second through-hole 50h may be 4 mm or more and 6 mm or less. In one embodiment, a gap 70 may be formed between the surface of the base 50 that defines the second through-hole 50h and the insulating member 7. The insulating member 7 may not contact the base 50. Since the insulating member 7 does not contact the base 50, replacement of the insulating member 7 or the ceramic member 6 is facilitated.

[0074] As described above, various exemplary embodiments have been described, but various additions, omissions, substitutions, and changes can be made without being limited to the above-described exemplary embodiments. Moreover, elements in different embodiments can be combined to form other embodiments.

[0075] Here, various exemplary embodiments included in the present invention are described in [E1] to [E14] below.

[0076] [E1]

[0077] A substrate support, comprising:

[0078] A support body configured to support an object including a substrate above it, and having: a dielectric part including an upper surface facing the object and a lower surface opposite to the upper surface; and an electrode disposed in the dielectric part, the support body providing a first through hole penetrating from the upper surface to the lower surface;

[0079] A base providing a second through hole communicating with the first through hole, the base being configured to support the support body above it; and

[0080] A ceramic component having air permeability that allows a heat transfer gas to pass through and filled at the upper end of the first through hole, and the ceramic component is positioned such that the distance between its lower end and the bias electrode is smaller than the distance between its upper end and the bias electrode in the direction in which the central axis of the first through hole extends.

[0081] [E2]

[0082] The substrate support according to E1, wherein

[0083] The lower end of the ceramic component is located above the bias electrode.

[0084] [E3]

[0085] The substrate support according to E2, wherein

[0086] The lower end of the ceramic component is located at a position separated from the bias electrode by 0.1 mm or more in the direction in which the central axis of the first through hole extends.

[0087] [E4]

[0088] The substrate support according to any one of E1 to E3, wherein

[0089] The ceramic component is a porous component or a multi-tube component providing a plurality of through holes penetrating from its upper end to its lower end.

[0090] [E5]

[0091] The substrate supporter according to any one of E1 to E4, wherein,

[0092] the ceramic component is a porous component,

[0093] the proportion of the volume of all pores in the volume of the porous component is 40% or more.

[0094] [E6]

[0095] The substrate supporter according to any one of E1 to E5, wherein,

[0096] the ceramic component is formed of alumina or silicon carbide.

[0097] [E7]

[0098] The substrate supporter according to any one of E1 to E6, further comprising an insulating component having insulation properties, disposed in the first through hole and the second through hole, and providing a third through hole connected to the ceramic component.

[0099] [E8]

[0100] The substrate supporter according to any one of E1 to E7, further comprising:

[0101] a first bonding material present between the support and the base and bonding the support and the base to each other; and

[0102] a second bonding component present between the insulating component and the support within the first through hole and bonding the insulating component and the support to each other.

[0103] [E9]

[0104] The substrate supporter according to any one of E1 to E8, wherein,

[0105] the maximum width of the second through hole is larger than the maximum width of the first through hole.

[0106] [E10]

[0107] The substrate supporter according to E9, wherein,

[0108] a gap is formed between the surface of the base defining the second through hole and the insulating component, and the insulating component does not contact the base.

[0109] [E11]

[0110] The substrate supporter according to any one of E7 to E10, wherein,

[0111] The insulating component is the first insulating component.

[0112] The substrate support further includes a second insulating component, which has insulation and is disposed in the third through hole.

[0113] The second insulating component provides a gap connected to the ceramic component in the third through hole.

[0114] [E12]

[0115] The substrate support according to claim E11, wherein

[0116] The second insulating component provides a groove extending in a spiral around the central axis of the third through hole on its surface.

[0117] The gap is formed between the surface of the second insulating component defining the groove and the surface of the first insulating component defining the third through hole.

[0118] [E13]

[0119] The substrate support according to any one of E1 to E13, wherein

[0120] The bias electrode is the first electrode.

[0121] The support further has a second electrode as an electrostatic electrode disposed in the dielectric portion.

[0122] [E14]

[0123] The substrate support according to E13, wherein

[0124] The second electrode is located above the first electrode.

[0125] [E15]

[0126] A plasma processing apparatus, comprising:

[0127] A plasma processing chamber; and

[0128] The substrate support according to any one of E1 to 14, which is disposed in the plasma processing chamber.

[0129] It can be understood from the above description that various embodiments of the present invention have been described in this specification for the purpose of illustration, and various changes can be made without departing from the scope and gist of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and gist are represented by the appended technical solutions.

[0130] Symbol description

[0131] 1 - Plasma processing apparatus, 5 - Substrate supporter, 6 - Ceramic component, 7 - Insulating component (first insulating component), 7h - Third through-hole, 10 - Plasma processing chamber, 50 - Base, 50h - Second through-hole, 51 - Support, 51h - First through-hole, 51a - Dielectric part, 51b - Electrostatic electrode (second electrode), 51c - Bias electrode (first electrode), 51d - Upper surface, 51e - Lower surface, 52 - First bonding material, 52a - Second bonding material, 70 - Gap, 71 - Insulating component (second insulating component), 71a - Groove, t1, t2 - Distances, W - Substrate.

Claims

1. A substrate support, characterized in that, it includes: a support body configured to support an object including a substrate above it, and having: a dielectric part including an upper surface facing the object and a lower surface opposite to the upper surface; and a bias electrode disposed in the dielectric part, the support body providing a first through hole penetrating from the upper surface to the lower surface; a base providing a second through hole communicating with the first through hole, the base being configured to support the support body above it; and a ceramic component having air permeability allowing a heat transfer gas to pass through and filled at the upper end of the first through hole, and the ceramic component is positioned in the direction in which the central axis of the first through hole extends such that the distance between its lower end and the bias electrode is smaller than the distance between its upper end and the bias electrode.

2. The substrate support according to claim 1, wherein, the lower end of the ceramic component is located above the bias electrode.

3. The substrate support according to claim 2, wherein, the lower end of the ceramic component is located at a position separated from the bias electrode by 0.1 mm or more in the direction in which the central axis of the first through hole extends.

4. The substrate support according to claim 1, wherein, the ceramic component is a porous component or a multi-tube component providing a plurality of through holes penetrating from its upper end to its lower end.

5. The substrate support according to claim 4, wherein, the ceramic component is a porous component, and the proportion of the volume of all air holes in the volume of the porous component is 40% or more.

6. The substrate support according to claim 1, wherein, the ceramic component is formed of alumina or silicon carbide.

7. The substrate support according to claim 1, wherein, it further includes an insulating component having insulation properties, disposed in the first through hole and the second through hole, and providing a third through hole connected to the ceramic component.

8. The substrate support according to claim 7, wherein, it further includes: a first bonding material present between the support body and the base and bonding the support body and the base to each other; and a second bonding component present between the insulating component and the support body in the first through hole and bonding the insulating component and the support body to each other.

9. The substrate support according to claim 8, wherein, the maximum width of the second through hole is larger than the maximum width of the first through hole.

10. The substrate support according to claim 9, wherein, a gap is formed between the surface of the base defining the second through hole and the insulating component, and the insulating component does not contact the base.

11. The substrate support according to claim 7, wherein, the insulating component is a first insulating component, the substrate support further includes a second insulating component having insulation properties and disposed in the third through hole, and the second insulating component provides a gap connected to the ceramic component in the third through hole.

12. The substrate support according to claim 11, wherein, The second insulating member provides a groove on its surface that extends helically around the central axis of the third through-hole. The gap is formed between the surface of the second insulating member that defines the groove and the surface of the first insulating member that defines the third through-hole.

13. The substrate support according to claim 1, wherein, the bias electrode is the first electrode, and the support further has a second electrode that is an electrostatic electrode disposed in the dielectric portion.

14. The substrate support according to claim 13, wherein, the second electrode is located above the first electrode.

15. A plasma processing apparatus, characterized in that it includes: a plasma processing chamber; and the substrate support according to any one of claims 1 to 14, the substrate support being disposed in the plasma processing chamber.

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