Deposition mask for OLED pixel deposition

Abstract

A deposition mask according to an embodiment includes a metal plate including a deposition region and a non-deposition region, in which a first direction and a second direction are defined, the first direction being a longitudinal direction and the second direction being a lateral direction, the deposition region including a plurality of active regions and a plurality of non-active regions, and the non-active regions including a plurality of non-active regions. The semiconductor device includes an active region including an inactive region including a first inactive region between the active regions, a plurality of through holes disposed in the active regions, at least one pattern disposed in the first inactive region, and the pattern and the through holes formed to have different shapes.

Description

Technical Field

[0001] The embodiment relates to a deposition mask for depositing OLED pixels. Background Art

[0002] Display devices are applied to various devices. For example, display devices are applied to small devices such as smartphones or tablets. Alternatively, display devices are applied to large devices such as TVs, monitors, or public displays. Recently, the demand for ultra-high definition (UHD) of 500 pixels per inch (PPI) or higher is increasing. Accordingly, display devices with high resolution are being applied to small and large devices.

[0003] According to the driving method, display devices are classified into liquid crystal displays (LCDs) and organic light emitting diodes (OLEDs).

[0004] An LCD is a display device driven by liquid crystals. In addition, an OLED is a display device driven by using organic materials.

[0005] An OLED can exhibit infinite contrast, has a response speed 1000 times faster than that of an LCD, and has an excellent viewing angle. Therefore, OELDs have attracted attention as display devices that can replace LCDs.

[0006] An OLED includes a light emitting layer. The light emitting layer includes an organic material. The organic material is deposited on a substrate by using a deposition mask. The deposition mask may include an aperture mask (OM) or a fine metal mask (FMM). A deposition pattern corresponding to a pattern formed on the deposition mask is formed on the substrate. Accordingly, the deposition pattern can be used as a pixel.

[0007] An aperture mask is a thin plate that forms a deposition pattern only at specific positions when manufacturing an OLED. During the display manufacturing process, an aperture mask is used during the deposition process of forming a light emitting layer on a backplane after completion. That is, an aperture mask is a mask that does not cover a portion within the operating range of the display in order to deposit the entire surface of the display. Accordingly, an aperture mask is used when depositing a light emitting layer of a light emitting material of one color.

[0008] On the other hand, a fine metal mask is used to change the color of sub-pixels of a light emitting layer. Accordingly, the fine metal mask includes ultra-fine holes. The process of using a fine metal mask requires a multi-step deposition process. Therefore, this process requires precise alignment. Therefore, the process of using a fine metal mask is more difficult than the process of using an aperture mask.

[0009] When depositing the light-emitting layer of an OLED using an aperture mask, only a monochromatic light-emitting layer is formed. Therefore, a separate color filter is required to achieve various colors. On the other hand, when using a fine metal mask, an RGB light-emitting layer can be formed. Therefore, a separate color filter is not required. That is, the technology using a fine metal mask has a higher level of difficulty. However, compared with the method using an aperture mask, since there is no need for a light filter to block light, the light efficiency is good.

[0010] A fine metal mask is generally made of an Invar alloy metal plate including iron (Fe) and nickel (Ni). Through holes are formed through one surface and the other surface of the metal plate. The through holes are formed at positions corresponding to pixel patterns. Therefore, red, green, and blue organic materials can pass through the through holes of the metal plate and be deposited on the deposition substrate. Thus, pixel patterns can be formed on the deposition substrate.

[0011] Meanwhile, the fine metal mask includes small surface holes formed on one surface of the metal plate and large surface holes formed on the other surface of the metal plate. The small surface holes and the large surface holes are connected by connecting portions. Thus, through holes are formed.

[0012] The organic material is ejected in the direction of the fine metal mask. The organic material is deposited on the deposition substrate using the large surface holes as inlets and the small surface holes as outlets.

[0013] Specifically, a plurality of strip-shaped fine metal masks are disposed on the deposition substrate. The organic material moves through the large surface holes of the plurality of fine metal masks in the direction of the small surface holes.

[0014] The fine metal mask is stretched in the longitudinal direction of the mask and connected to a frame. Thus, the plurality of fine metal masks are fixed by the frame.

[0015] Therefore, stress is generated in the fine metal mask by the tension. Therefore, due to the stress, waviness may be formed on the surface of the fine metal mask.

[0016] The waviness can change the distance between the small surface holes and the large surface holes. Therefore, the position of the organic material deposited through the fine metal mask changes. Therefore, the deposition reliability of the fine metal mask may be reduced.

[0017] Therefore, a deposition mask with a new structure capable of solving the above problems is required. Summary of the Invention

[0018] Technical Problem

[0019] Embodiments provide a deposition mask with improved deposition reliability.

[0020] Technical Solution

[0021] The deposition mask includes: a metal plate, which includes a deposition area and a non-deposition area, wherein the metal plate has a defined first direction and a second direction, the first direction being the longitudinal direction and the second direction being the width direction, wherein the deposition area includes a plurality of effective areas and non-effective areas, wherein the non-effective areas include a first non-effective area between the effective areas, wherein a plurality of through-holes are provided in the effective areas, wherein at least one pattern is provided in the first non-effective area, and wherein the pattern and the through-holes are formed in different shapes.

[0022] Advantageous Effects

[0023] By providing a pattern between the effective areas, the reliability of the deposition mask according to the present embodiment can be improved.

[0024] The deposition mask is fixed by a mask frame. At this time, the deposition mask is stretched in the longitudinal direction. Therefore, after the deposition mask is fixed to the mask frame, tensile stress may remain inside the deposition mask. The surface waviness of the deposition mask may increase due to the residual stress. Therefore, the interval between the effective areas of the deposition mask may change. In addition, the interval between the through-holes provided in the effective areas may vary.

[0025] The deposition mask may include a pattern provided on the deposition area. Specifically, the pattern may be provided between adjacent effective areas.

[0026] The residual stress of the deposition mask can be dispersed by the pattern. Therefore, the waviness of the deposition mask can be reduced.

[0027] Therefore, the change in the interval between the effective areas and the change in the interval between the through-holes inside the effective areas are minimized. Therefore, the deposition mask has improved deposition reliability.

[0028] In addition, the pattern and the through-holes are formed by different processes. Therefore, the shape and size of the pattern can be formed in various ways. Therefore, the shape and size of the pattern can be formed in various ways according to the magnitude of the tensile force applied to the deposition mask. Therefore, patterns with various shapes and sizes can be formed according to the size and use environment of the deposition mask. Therefore, the deposition mask can have improved deposition reliability.

[0029] In addition, the difference in the width of the pattern can be small in the thickness direction of the metal plate. Therefore, the difference in the amount of metal removed from the first surface and the second surface of the deposition mask can be reduced. Therefore, it is possible to prevent the deposition mask from bending in one direction due to the difference between the residual metals on the first surface and the second surface. Brief Description of the Drawings

[0030] Figure 1 A view showing a combination of a deposition mask and a frame according to an embodiment.

[0031] Figure 2 A cross-sectional view of an organic material deposition apparatus including a deposition mask according to an embodiment.

[0032] Figure 3 A view showing a deposition pattern formed on a deposition substrate through a through hole of a deposition mask according to an embodiment.

[0033] Figure 4 A plan view of a deposition mask according to an embodiment.

[0034] Figures 5 to 7 Is along Figure 4 View taken along section A - A' of the area.

[0035] Figures 8 to 23 A plan view of a deposition mask according to another embodiment. Detailed embodiments

[0036] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, the spirit and scope of the present disclosure are not limited to the described parts of the embodiments, but can be implemented in various other forms, and within the spirit and scope of the present disclosure, one or more elements of the embodiments can be selectively combined and replaced. In addition, unless otherwise clearly defined and described, the terms (including technical and scientific terms) used in the embodiments of the present disclosure can be interpreted as having the same meaning as commonly understood by those of ordinary skill in the art to which the present disclosure pertains, and terms such as those defined in a common dictionary can be interpreted as having a meaning consistent with their meaning in the context of the relevant field.

[0037] In addition, the terms used in the embodiments of the present disclosure are used to describe the embodiments and are not intended to limit the present disclosure. In this specification, unless otherwise specifically stated in the language, the singular form may also include the plural form, and when describing "at least one (or more) of A (and), B, and C", it may include at least one of all combinations that can be combined with A, B, and C.

[0038] In addition, when describing the elements of the embodiments of the present disclosure, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the elements from other elements, and the terms are not limited to the nature, order, or sequence of the elements.

[0039] In addition, when an element is described as being "connected", "coupled", or "joined" to another element, it includes not only the case where the element is directly "connected", "coupled", or "joined" to the other element, but also the case where the element is "connected", "coupled", or "joined" to the other element through another element between the element and the other element.

[0040] In addition, when described as being "on (above)" or "under (below)" each element, "on (above)" or "under (below)" includes not only the case where two elements are directly connected to each other, but also the case where one or more other elements are formed or disposed between the two elements.

[0041] In addition, when expressed as "on (above)" or "under (below)", it includes not only the upper direction based on one element, but also the lower direction based on one element.

[0042] Hereinafter, a deposition mask according to an embodiment will be described with reference to the drawings.

[0043] The deposition mask described below is a fine metal mask that can form an RGB pixel pattern on a deposition substrate by depositing red, green, and blue organic materials on the deposition substrate. In addition, the following description does not apply to an aperture mask.

[0044] In the following description, the first direction 1D is the longitudinal direction of the deposition mask. In addition, the second direction 2D is the width direction of the deposition mask.

[0045] Figures 1 to 3 is a view for explaining a process of depositing an organic material on a deposition substrate 300 using a deposition mask 100 according to an embodiment.

[0046] Referring to Figure 1 and Figure 2 , the organic material deposition apparatus includes a deposition mask 100, a mask frame 200, a deposition substrate 300, an organic material deposition container 400, and a vacuum chamber 500.

[0047] The deposition mask 100 includes metal. For example, the deposition mask includes iron (Fe) and nickel (Ni). Specifically, the deposition mask includes an invar alloy containing iron (Fe) and nickel (Ni).

[0048] The deposition mask 100 includes a plurality of through holes TH. The through holes are provided in the effective area. The through holes are provided to correspond to the pixel pattern to be formed on the deposition substrate. The deposition mask 100 includes not only an effective area including a deposition area, but also a non-effective area.

[0049] That is, the deposition mask 100 may include a metal plate 10, and a plurality of through holes TH may be formed in the metal plate 10.

[0050] The mask frame 200 includes an opening 205. A plurality of through holes are provided in a region corresponding to the opening 205. Accordingly, the organic material supplied to the organic material deposition container 400 is deposited on the deposition substrate 300. The deposition mask 100 is disposed and fixed on the mask frame 200. For example, the deposition mask 100 is tensioned with a set tensile force. In addition, the deposition mask 100 is welded and fixed to the mask frame 200.

[0051] For example, the non-effective area of the deposition mask 100 is welded. Accordingly, the deposition mask 100 is fixed to the mask frame 200. Then, the portion protruding from the mask frame 200 is cut and removed.

[0052] The mask frame 200 includes a metal having high rigidity. Accordingly, deformation of the mask frame during the welding process is reduced.

[0053] The deposition substrate 300 is a substrate used in manufacturing a display device. For example, an OLED pixel pattern is formed on the deposition substrate 300. Red, green, and blue organic patterns are formed on the deposition substrate 300 to form pixels as the three primary colors of light. That is, an RGB pattern is formed on the deposition substrate 300.

[0054] The organic material deposition container 400 is a crucible. The organic material is disposed inside the crucible. The organic material deposition container 400 moves inside the vacuum chamber 500. That is, the organic material deposition container 400 moves in one direction inside the vacuum chamber 500. For example, the organic material deposition container 400 moves in the width direction of the deposition mask 100 inside the vacuum chamber 500.

[0055] A heat source and / or current is supplied to the organic material deposition container 400. Accordingly, the organic material is deposited on the deposition substrate 300.

[0056] Refer to Figure 3 , the deposition mask 100 includes a metal plate 10. The metal plate includes a first surface 1S and a second surface 2S. The first surface 1S and the second surface 2S face each other.

[0057] The first surface 1S includes small surface holes V1. The second surface 2S includes large surface holes V2. For example, a plurality of small surface holes V1 and a plurality of large surface holes V2 are respectively formed on the first surface 1S and the second surface 2S.

[0058] In addition, the deposition mask 100 includes through holes TH. The through holes TH are formed by connection portions CA connecting the boundaries between the small surface holes V1 and the large surface holes V2.

[0059] The width of the large surface hole V2 is greater than the width of the small surface hole V1. The width of the small surface hole V1 is measured on the first surface 1S of the deposition mask 100. The width of the large surface hole V2 is measured on the second surface 2S of the deposition mask 100.

[0060] In addition, the width of the connection part CA has a set dimension. Specifically, the width of the connection part CA can be 15 μm to 33 μm. More specifically, the width of the connection part CA can be 19 μm to 33 μm. More specifically, the width of the connection part CA can be 20 μm to 27 μm. When the width of the connection part CA exceeds 33 μm, it is difficult to achieve a resolution of 500 PPI or higher. Additionally, when the width of the connection part CA is less than 15 μm, defects may occur during the deposition process.

[0061] The small surface hole V1 faces the deposition substrate 300. The small surface hole V1 is arranged to be close to the deposition substrate 300. Therefore, the small surface hole V1 has a shape corresponding to the deposition pattern DP.

[0062] The large surface hole V2 faces the organic material deposition container 400. Therefore, the organic material supplied from the organic material deposition container 400 can be accommodated through the large surface hole V2 with a wide width. In addition, a fine pattern can be quickly formed on the deposition substrate 300 through the small surface hole V1.

[0063] Therefore, the organic material accommodated in the large surface hole V2 is deposited on the deposition substrate 300 through the small surface hole V1. Therefore, any one of the red, green, and blue pixel patterns is formed on the deposition substrate 300. Then, the above process is repeated. Therefore, all of the red, green, and blue pixel patterns are formed on the deposition substrate 300.

[0064] As described above, the deposition mask is stretched in one direction to be fixed to the mask frame. Specifically, the deposition mask 100 can be stretched in the first direction.

[0065] Therefore, tensile stress is formed inside the deposition mask 100. In addition, after the deposition mask 100 is fixed to the mask frame 200, stress remains inside the deposition mask 100. Due to the residual stress, the waviness formed on the surface of the deposition mask 100 may increase.

[0066] Therefore, the interval between the effective areas through which the organic material moves may change. Alternatively, the interval of the through holes provided in the effective areas may change. Therefore, when a deposition pattern is formed on the deposition substrate through the deposition mask, the interval of the deposition pattern may change. Therefore, the deposition reliability of the deposition mask may decrease.

[0067] Hereinafter, a deposition mask capable of solving the above problems will be described.

[0068] Figure 4 is a plan view of a deposition mask according to an embodiment. Figures 5 to 7 is a view taken along the Figure 4 region A-A' of.

[0069] Referring to Figures 4 to 7 , the deposition mask 100 includes a deposition region DA and a non-deposition region NDA.

[0070] The deposition region DA is a region for forming a deposition pattern. The deposition region DA includes an active region AA and an inactive region UA. The active region AA is a region where through-holes TH through which an organic material passes are formed. In addition, the inactive region UA is a region where the through-holes TH are not formed.

[0071] In the drawings, the active region AA is shown as a square. However, the embodiment is not limited thereto. The active region AA may have a rectangular shape.

[0072] The active region AA may include a plurality of active regions. The plurality of active regions are spaced apart in a first direction.

[0073] The deposition region DA is a region in the first direction from the starting point of the first active region to the ending point of the last active region.

[0074] The non-deposition region NDA is a region that does not participate in deposition. The non-deposition region NDA includes a frame fixing region. The frame fixing region is a region for fixing the deposition mask 100 to the mask frame 200. In addition, the non-deposition region NDA may include at least one semi-etched portion HF and an opening portion OA. The semi-etched portion HF may be formed by partially etching the metal plate 10. In addition, the opening portion OA may be formed by etching the entire metal plate 10.

[0075] The first non-deposition region UA1 is a region between the active regions AA. Therefore, the plurality of first non-deposition regions UA1 are spaced apart in the first direction 1D. In addition, the second non-deposition region UA2 is a region between the active region AA and the deposition mask 100. Alternatively, the second non-deposition region UA2 is a region between the two ends of the metal plate in the second direction.

[0076] The non-deposition region NDA is a region that does not participate in deposition. The non-deposition region NDA includes a frame fixing region. The frame fixing region is a region for fixing the deposition mask 100 to the mask frame 200. In addition, the non-deposition region NDA may include at least one semi-etched portion HF and an opening portion OA. The semi-etched portion HF may be formed by partially etching the metal plate 10. In addition, the opening portion OA may be formed by etching the entire metal plate 10.

[0077] The semi-etched portion HF can disperse the stress generated when the deposition mask 100 is stretched. Therefore, the waviness of the deposition mask can be reduced.

[0078] In addition, the opening portion OA is a region for fixing a jig (such as a clamp) when the deposition mask 100 is tensioned.

[0079] The through hole TH can be disposed in the active area AA. Specifically, the through hole TH includes a small surface hole V1, a large surface hole V2, and a connection portion CA. The connection portion CA connects the small surface hole V1 and the large surface hole V2.

[0080] The pattern P can be disposed in the non-active area UA. Specifically, a plurality of patterns P can be disposed in the first non-active area UA1. That is, the pattern P can be disposed between the active areas AA. That is, the pattern P can be disposed between adjacent active areas AA.

[0081] The pattern P disperses the residual stress of the deposition mask 100. Therefore, the stress of the deposition mask can be reduced. Specifically, the residual stress generated by the tension of the deposition mask 100 can be transferred to the periphery of the pattern P. Therefore, the residual stress of the deposition mask 100 can be dispersed without concentrating in one area. Therefore, the magnitude of the waviness of the deposition mask 100 can be reduced by the pattern P.

[0082] Therefore, the variation in the interval between the active areas and / or the variation in the interval between the through holes disposed inside the active areas can be reduced. That is, the position variation of the active areas and the position variation of the through holes can be reduced.

[0083] Therefore, when forming a deposition pattern on a deposition substrate using the deposition mask 100, the deposition pattern can be formed at a desired position on the deposition substrate 300. Therefore, the deposition mask according to the embodiment can have improved deposition reliability.

[0084] The pattern P and the through hole TH can be formed in different shapes. For example, the pattern P and the through hole TH can have different widths. In addition, the pattern P and the through hole TH can have different inner surface shapes.

[0085] For example, the width of the through hole TH and the width of the pattern P can change when extending in the thickness direction of the metal plate 10. In this case, the change in the width of the through hole TH can be greater than the change in the width of the pattern P. That is, the difference between the maximum width and the minimum width of the through hole TH can be greater than the difference between the maximum width and the minimum width of the pattern P.

[0086] For example, the first surface 1S and the second surface 2S of the metal plate 10 are etched to form the small surface hole V1 and the large surface hole V2, respectively. The through hole TH can be formed by a connection portion CA connecting the small surface hole V1 and the large surface hole V2. For example, the through hole TH can be formed by etching the metal plate 10 using an etchant.

[0087] Therefore, the inner surface of the through hole TH can have a curvature. Therefore, the width of the through hole TH can change when extending from the first surface 1S to the second surface 2S.

[0088] In addition, the pattern P can be formed by etching the first surface 1S or the second surface 2S of the metal plate 10. For example, the pattern P can be formed using a laser. For example, the pattern P can be formed by irradiating a laser in the direction of the first surface 1S or the second surface 2S.

[0089] Therefore, the angle of the inner surface of the through hole TH can be greater than the angle of the inner surface of the pattern P.

[0090] Referring to Figure 5 , the pattern P can be formed by penetrating the first surface 1S and the second surface 2S. Specifically, the laser is irradiated in the direction of the first surface 1S or the second surface 2S and penetrates the metal plate 10. Therefore, the pattern P can be formed in a hole shape. That is, the pattern P can be a hole formed in the deposition mask 100.

[0091] Since the pattern P is formed in a hole shape, the residual stress of the first surface 1S and the second surface 2S can be dispersed through the pattern P. Therefore, the waviness of the first surface 1S and the second surface 2S can be reduced.

[0092] Alternatively, referring to Figure 6 and Figure 7 , the pattern P can be formed by partially removing the first surface 1S or the second surface 2S. Specifically, the laser can be irradiated in the direction of the first surface 1S or the second surface 2S to partially remove the first surface 1S or the second surface 2S. Therefore, the pattern P can be formed in a groove shape. That is, the pattern P can be a groove formed in the deposition mask 100.

[0093] Therefore, the inner surface of the pattern P can have a flat surface. Therefore, the change in the width of the pattern P can be very small when extending from the first surface 1S to the second surface 2S.

[0094] Since the pattern P is formed in a groove shape, the residual stress of the first surface 1S or the second surface 2S can be dispersed through the pattern P. In addition, due to the pattern P, a reduction in the strength of the deposition mask can be prevented. In addition, when the pattern P is formed on the first surface 1S where the small surface hole V1 is formed, the difference in the amount of metal remaining on the first surface 1S and the second surface 2S can be reduced. Therefore, bending of the deposition mask in one direction can be prevented.

[0095] The width W1 of the pattern P can have a set size. The width W1 of the pattern P can be different from the width W2 of the small surface hole V1. For example, the width W1 of the pattern P can be smaller than the width W2 of the small surface hole W1.

[0096] Alternatively, the width W1 of the pattern P can be different from the width W3 of the large surface hole V2. For example, the width W1 of the pattern P can be smaller than the width W3 of the large surface hole V2.

[0097] Here, the width W1 of the pattern P refers to the maximum width among the widths of the pattern P. The width W2 of the small surface hole V1 refers to the maximum width among the widths of the small surface hole V1. The width W3 of the large surface hole V2 refers to the maximum width among the widths of the large surface hole V2.

[0098] Alternatively, the width W1 of the pattern P may be different from the first distance D1 between the pattern P and the small surface hole V1 in the first direction. For example, the width W1 of the pattern P may be less than the first distance D1.

[0099] Alternatively, the width W1 of the pattern P may be different from the second distance D2 between the pattern P and the large surface hole V2 in the first direction. For example, the width W1 of the pattern P may be less than the second distance D2.

[0100] For example, the width W1 of the pattern P may be from 0.005 mm to 20 mm. In addition, the inclination angle of the inner surface of the pattern P may be 60° or greater.

[0101] Since the pattern P has the set width as described above, the deposition reliability of the deposition mask can be improved. Specifically, when the width of the pattern P is formed large, due to errors during the process, the distance between the pattern P and the effective area AA may be very small. Alternatively, the pattern P may be partially formed inside the effective area AA.

[0102] Therefore, the organic material can pass through the pattern P. As a result, the quality of the deposited pattern may be reduced. Therefore, in the deposition mask according to the embodiment, the deposition reliability of the deposition mask can be improved by setting the width of the pattern as described above.

[0103] The deposition mask according to the embodiment has improved deposition reliability through the pattern.

[0104] The deposition mask is fixed by a mask frame. At this time, the deposition mask is stretched in the longitudinal direction. Therefore, after the deposition mask is fixed to the mask frame, tensile stress may remain inside the deposition mask. Due to the residual stress, the waviness of the surface of the deposition mask may increase. Therefore, the interval between the effective areas of the deposition mask may change. In addition, the interval between the through holes provided in the effective area may vary.

[0105] The deposition mask may include a pattern provided on the deposition area. Specifically, the pattern may be provided between adjacent effective areas.

[0106] The residual stress of the deposition mask can be dispersed by the pattern. Therefore, the waviness of the deposition mask can be reduced.

[0107] Therefore, the variation in the intervals between the effective regions and the variation in the intervals between the through-holes within the effective regions are minimized. As a result, the deposition mask has improved deposition reliability.

[0108] In addition, the pattern and the through-hole are formed by different processes. Therefore, the shape and size of the pattern can be formed in various ways. Thus, the shape and size of the pattern can be formed in various ways according to the magnitude of the tensile stress applied to the deposition mask. Accordingly, patterns with various shapes and sizes can be formed according to the size and usage environment of the deposition mask. As a result, the deposition mask can have improved deposition reliability.

[0109] Moreover, the difference in the width of the pattern can be small in the thickness direction of the metal plate. Therefore, the difference in the amount of metal removed from the first surface and the second surface of the deposition mask can be reduced. Accordingly, it is possible to prevent the deposition mask from bending in one direction due to the difference between the residual metals on the first surface and the second surface.

[0110] Hereinafter, various arrangements and shapes of the patterns of the deposition mask according to other embodiments will be described with reference to Figures 8 to 20 In the description of the deposition mask according to another embodiment, descriptions that are the same as or similar to those of the deposition mask according to the above embodiment will be omitted. In addition, the same reference numerals are attached to the same components.

[0111] With reference to Figure 8 , the deposition mask 100 may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1 and a second pattern portion PA2. For ease of explanation, Figure 8 only the first pattern portion PA1 and the second pattern portion PA2 are shown. However, the embodiment is not limited thereto. The deposition mask may include three or more pattern portions.

[0112] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D.

[0113] The first pattern portion PA1 and the second pattern portion PA2 may be spaced apart from each other in the first direction 1D.

[0114] The deposition mask 100 according to another embodiment includes a first pattern portion PA1 and a second pattern portion PA2. Accordingly, patterns can be formed at various positions of the first non-effective region UA1. As a result, the waviness of the deposition mask is reduced. Therefore, the deposition reliability of the deposition mask can be improved.

[0115] With reference to Figure 9 and Figure 10, the deposition mask 100 may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1, a second pattern portion PA2, and a third pattern portion PA3. For ease of illustration, Figure 9 and Figure 10 only the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 are shown. However, the embodiments are not limited thereto. The deposition mask may include four or more pattern portions.

[0116] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0117] The first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be spaced apart from each other in the first direction 1D.

[0118] Referring to Figure 9 , the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be set as zigzag patterns. That is, the second pattern P2 is disposed between adjacent first patterns P1. In addition, the third pattern P3 is disposed between adjacent second patterns P2.

[0119] Alternatively, referring to Figure 10 , the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be disposed in the first direction 1D. That is, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may face each other in the first direction 1D.

[0120] In addition, the deposition mask 100 may include a semi-etched portion HF provided in the non-deposition area NDA. The semi-etched portion HF may be formed by partially removing the first surface 1S of the metal plate 10. That is, the semi-etched portion HF may be a groove formed in the first surface 1S.

[0121] The semi-etched portion HF may disperse the stress in the non-deposition area NDA. Therefore, the waviness of the non-deposition area NDA can be reduced. Therefore, when an organic material is deposited on the deposition substrate using the deposition mask 100, a gap can be prevented from being formed between the deposition mask and the deposition substrate.

[0122] Therefore, an increase in the distance between the small surface holes V1 and the deposition substrate 300 can be prevented. Therefore, a reduction in the deposition quality due to the shadow effect can be prevented.

[0123] The number of patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be different. Specifically, the number of the first pattern P1, the second pattern P2, and the third pattern P3 may be different. More specifically, the number of the first pattern P1 may be greater than the number of the second pattern P2 and the third pattern P3. In addition, the number of the second pattern P2 may be greater than the number of the third pattern P3.

[0124] Therefore, the number of patterns may decrease when extending from the active region AA toward the central portion C of the first non-active region UA1. That is, the area of the opening region formed by the patterns may decrease when extending from the active region AA toward the central portion C of the first non-active region UA1.

[0125] Therefore, the number of patterns and the area of the opening region may decrease when extending from the outside to the inside of the first non-active region UA1 along the first direction 1D. In addition, the number of patterns and the area of the opening region may increase when extending from the outside to the inside of the first non-active region UA1 along the second direction 2D.

[0126] In a deposition mask according to another embodiment, the number of patterns and the area of the opening region decrease when extending from the outside to the inside of the first non-active region UA1 along the first direction 1D. Therefore, the effect of dispersing stress in the region adjacent to the active region increases. Therefore, the waviness of the region adjacent to the active region decreases. Therefore, the position variation of the vias decreases.

[0127] In addition, in a deposition mask according to another embodiment, the number of patterns and the area of the opening region increase when the first non-active region UA1 extends from the outside to the inside along the second direction 2D. Therefore, the residual stress in the second direction in the outer and central portions of the deposition mask can be formed similarly.

[0128] Referring to Figure 11 and Figure 12 , the deposition mask 100 may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1, a second pattern portion PA2, and a third pattern portion PA3. For the sake of illustration, only the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 are shown in Figure 11 and Figure 12 . However, the embodiment is not limited thereto. The deposition mask may include four or more pattern portions.

[0129] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0130] The first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be spaced apart from each other in the first direction 1D.

[0131] Referring to Figure 11 , the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be set as zigzag patterns. That is, the second pattern P2 is disposed between adjacent first patterns P1. In addition, the third pattern P3 is disposed between adjacent second patterns P2.

[0132] Alternatively, referring to Figure 12 , the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be arranged in the first direction 1D. That is, the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may face each other in the first direction 1D.

[0133] The number of patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be different. Specifically, the number of the first patterns P1, the second patterns P2, and the third patterns P3 may be different. More specifically, the number of the first patterns P1 may be less than the number of the second patterns P2 and the third patterns P3. In addition, the number of the second patterns P2 may be less than the number of the third patterns P3.

[0134] Therefore, the number of patterns may increase when extending from the effective area AA towards the central portion C of the first non-effective area UA1. That is, the area of the opening region formed by the patterns may increase when extending from the effective area AA towards the central portion C of the first non-effective area UA1.

[0135] Therefore, the number of patterns and the area of the opening region may increase when extending from the outside to the inside of the first non-effective area UA1 along the first direction 1D. In addition, the number of patterns and the area of the opening region may increase when extending from the outside to the inside of the first non-effective area UA1 along the second direction 2D.

[0136] In a deposition mask according to another embodiment, the number of patterns and the area of the opening regions increase when extending from the outside to the inside of the first non-effective region UA1 along the first direction 1D. Accordingly, the stress dispersion effect in the central portion of the first non-effective region increases. Accordingly, the waviness of the first non-effective region can be reduced. Accordingly, the variation in the spacing between the effective regions is reduced.

[0137] In addition, in a deposition mask according to another embodiment, the number of patterns and the area of the opening regions increase when extending from the outside to the inside of the first non-effective region UA1 along the second direction 2D. Accordingly, the residual stress in the outside and central portions of the deposition mask in the second direction can be formed similarly.

[0138] Referring to Figure 13 and Figure 14 , the deposition mask 100 may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1, a second pattern portion PA2, and a third pattern portion PA3. For ease of description, only the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 are shown in Figure 13 and Figure 14 . However, the embodiment is not limited thereto. The deposition mask may include four or more pattern portions.

[0139] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0140] The first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be spaced apart from each other in the first direction 1D.

[0141] At least one of the plurality of effective regions AA may define two non-effective regions provided at both ends along the first direction 1D. In the center of the two non-effective regions, the number of pattern portions and the number of patterns in the region adjacent to the effective region may be different. That is, the areas of the opening regions provided at both ends of the effective region AA along the first direction 1D may be different.

[0142] Referring to Figure 13 , the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be provided in the region adjacent to the first end E1 of the effective region AA. In addition, only the first pattern portion PA1 may be provided in the region adjacent to the second end E2 of the effective region AA.

[0143] Alternatively, referring to Figure 14 , the first pattern portion PA1 and the second pattern portion PA2 may be provided in a region adjacent to the first end E1 of the active region AA. Further, no pattern portion may be provided in a region adjacent to the second end E2 of the active region AA.

[0144] The region adjacent to the end of the active region AA is a region between the central portion of the active region AA and the first non-active region UA1.

[0145] Therefore, the number of patterns provided in the region adjacent to the first end E1 of the active region AA and the number of patterns provided in the region adjacent to the second end E2 of the active region AA are different. That is, the area of the opening region provided in the region adjacent to the first end E1 of the active region AA may be different from the area of the opening region provided in the region adjacent to the second end E2 of the active region AA.

[0146] Further, the number of patterns or the area of the opening region provided in the plurality of first non-active regions UA1 may be different from each other.

[0147] Referring to Figure 13 and Figure 14 , the first non-active region UA1 may include a 1-1 non-active region UA1-1 and a 1-2 non-active region UA1-2 spaced apart in the first direction. That is, the active region AA may be provided between the 1-1 non-active region UA1-1 and the 1-2 non-active region UA1-2. Specifically, one active region may be provided between the 1-1 non-active region UA1-1 and the 1-2 non-active region UA1-2.

[0148] The number of patterns provided in the 1-1 non-active region UA1-1 and the number of patterns provided in the 1-2 non-active region UA1-2 may be different. For example, the number of patterns provided in the 1-1 non-active region UA1-1 may be greater than the number of patterns provided in the 1-2 non-active region UA1-2. That is, the area of the opening region of the 1-1 non-active region UA1-1 may be greater than the area of the opening region provided in the 1-2 non-active region UA1-2.

[0149] In a deposition mask according to another embodiment, the number of patterns and the area of the opening region provided in the regions adjacent to both ends of the active region may be different. Alternatively, the number of patterns and the area of the opening region provided in each of the first non-active regions may be different.

[0150] Through holes, patterns, and opening regions are formed in the metal plate. Before forming the through holes, patterns, and opening regions in the metal plate, a rolling process may be performed. In this way, the thickness of the metal plate can be formed to a set thickness.

[0151] Through the rolling process, stress is generated inside the metal plate. In addition, waviness may be formed on the surface of the metal plate due to the stress.

[0152] Therefore, before forming the through holes, patterns, and opening regions in the metal plate, the waviness distribution of the metal plate is measured. Subsequently, the number of patterns to be formed in the regions with large waviness and the regions with small waviness can be different.

[0153] For example, many patterns are formed in the regions with large waviness. In addition, a small number of patterns are formed in the regions with small waviness. Therefore, the waviness caused by the tensile stress generated when the deposition mask is stretched can be reduced.

[0154] That is, many patterns are formed in the regions with large waviness, while fewer patterns are formed in the regions with small waviness. Thus, the area of the opening regions in the regions with small waviness is relatively reduced to disperse the tensile stress. Therefore, after the deposition mask is fixed to the mask frame, a further increase in waviness due to the raw material characteristics of the metal plate can be prevented.

[0155] Refer to Figure 15 and Figure 16 , the shape of the effective region AA can be different.

[0156] Specifically, the width of the effective region AA can change when extending in one direction. Specifically, the width of at least one of the multiple effective regions can change.

[0157] For example, refer to Figure 15 , the width of the effective region AA can change when extending in the first direction 1D.

[0158] Alternatively, refer to Figure 16 , the width of the effective region AA can change when extending in the second direction 2D.

[0159] That is, the effective region AA of the deposition mask 100 can be formed into various shapes. Therefore, the patterns deposited on the deposition substrate 300 can be formed into various designs.

[0160] The deposition mask 100 may include a plurality of patterns P. The number of patterns P can change when moving away from one end of the effective region AA.

[0161] For example, refer to Figure 15, the width of the effective region AA narrows when extending from the 1-2 end E1-2 towards the 1-1 end E1-1. In addition, the number of patterns P decreases from the 1-2 end E1-2 towards the 1-1 end E1-1.

[0162] Alternatively, referring to Figure 16 , the width of the effective region AA narrows when extending from the 2-2 end E2-2 towards the 1-2 end E1-2. In addition, the number of patterns P increases from the 2-2 end E2-2 towards the 1-2 end E1-2.

[0163] Therefore, in the deposition mask according to another embodiment, the patterns can be set differently according to the shape of the effective region AA. Thus, even if the shape of the effective region AA changes, the residual stress can be effectively dispersed by the patterns. Therefore, the waviness of the deposition mask can be reduced. Therefore, the deposition reliability of the deposition mask can be improved.

[0164] Referring to Figures 17 to 20 , the deposition mask 100 according to another embodiment may include a plurality of pattern portions. For example, the deposition mask 100 may include a first pattern portion PA1, a second pattern portion PA2, and a third pattern portion PA3. For ease of description, only the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 are shown in Figures 17 to 20 . However, the embodiment is not limited thereto. The deposition mask may include four or more pattern portions.

[0165] The first pattern portion PA1 may include a plurality of first patterns P1. The plurality of first patterns P1 may be spaced apart in the second direction 2D. The second pattern portion PA2 may include a plurality of second patterns P2. The plurality of second patterns P2 may be spaced apart in the second direction 2D. The third pattern portion PA3 may include a plurality of third patterns P3. The plurality of third patterns P3 may be spaced apart in the second direction 2D.

[0166] The first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may be spaced apart from each other in the first direction 1D.

[0167] The size of the pattern may change when extending along one direction. Specifically, the size of the pattern may change when extending along the first direction 1D.

[0168] Referring to Figure 17 , the patterns of the first pattern portion PA1, the second pattern portion PA2, and the third pattern portion PA3 may have different sizes. Specifically, the size of the first pattern P1 may be larger than the sizes of the second pattern P2 and the third pattern P3. In addition, the size of the second pattern P2 may be larger than the size of the third pattern P3.

[0169] That is, the size of the pattern can decrease when extending from the end of the effective region toward the central portion C of the first non-effective region UA1.

[0170] Alternatively, referring to Figure 18 , the size of the first pattern P1 can be smaller than the sizes of the second pattern P2 and the third pattern P3. In addition, the size of the second pattern P2 can be smaller than the size of the third pattern P3.

[0171] That is, the size of the pattern can increase when extending from the end of the effective region toward the central portion C of the first non-effective region UA1.

[0172] Alternatively, the pitch of the patterns can change when extending in one direction. Specifically, the pitch of the patterns can change when extending in the first direction 1D.

[0173] Referring to Figure 19 , the distance G1 between the first pattern P1 and the second pattern P2 can be smaller than the distance G2 between the second pattern P2 and the third pattern P3.

[0174] That is, the pitch of the patterns can increase when extending from the end of the effective region toward the central portion C of the first non-effective region UA1.

[0175] Alternatively, referring to Figure 20 , the distance G1 between the first pattern P1 and the second pattern P2 can be larger than the distance G2 between the second pattern P2 and the third pattern P3.

[0176] That is, the pitch between the patterns can decrease when extending from the end of the effective region toward the central portion C of the first non-effective region UA1.

[0177] In addition, although not shown in the drawings, both the size and the pitch of the patterns can change when extending in the first direction 1D.

[0178] In a deposition mask according to another embodiment, the size and the pitch of the patterns can vary.

[0179] Thus, many patterns can be formed in a region adjacent to the effective region. Alternatively, many patterns can be formed in a region far from the effective region.

[0180] Depending on the manufacturing process or the properties of the raw materials, the metal plate can have different physical properties. Therefore, residual stress may concentrate in the central region or the outer region of the deposition mask.

[0181] Therefore, the size and spacing of the pattern are set in various ways. Therefore, the position of the pattern can be controlled according to the physical properties of the metal plate. Therefore, the tensile stress caused by the tension of the deposition mask is effectively dispersed. Therefore, the corrugation of the deposition mask is reduced. Therefore, the deposition mask can have improved deposition reliability.

[0182] Referring to Figure 21 and Figure 22 , the pattern portion can be formed in a region other than the effective region AA.

[0183] Referring to Figure 21 , the pattern P can be formed in the non-deposition area NDA. Therefore, the pattern P can be formed between the opening portion OA and the effective region AA.

[0184] Therefore, the residual stress can be effectively dispersed in the non-deposition area NDA. In addition, the process of forming a separate semi-etched portion in the non-deposition area NDA can be omitted.

[0185] Referring to Figure 22 , the pattern P can be formed in the second non-effective region UA2. That is, the pattern P can be formed in the second direction between the effective region AA and the end of the deposition mask 100.

[0186] Therefore, the pattern P can also be formed in a region outside the deposition area DA.

[0187] Therefore, the residual stress can be effectively dispersed in a region outside the deposition area NDA. In addition, an increase in the distance between the small surface hole V1 and the deposition substrate 300 can be prevented. Therefore, a decrease in deposition quality due to the shadow effect can be prevented.

[0188] In addition, although not shown in the drawings, the pattern P can be formed in both the non-deposition area NDA and the second non-effective region UA2.

[0189] Referring to Figure 23 , one pattern P can be formed between the effective regions.

[0190] The area of the pattern P can be smaller than the area of the first non-effective region UA1. Specifically, the area of the pattern P can be 90% or less, 80% or less, 70% or less, or 60% or less of the area of the first non-effective region UA1. For example, the area of the pattern P can be 50% to 90% of the area of the first non-effective region UA1.

[0191] When the area of the pattern P exceeds 90% of the area of the first non-effective region UA1, a region of the pattern P may be set inside the effective region AA due to errors during the process. Therefore, the deposition reliability of the deposition mask may be reduced.

[0192] In addition, when the area of the pattern P is less than 50% of the area of the first non-effective region UA1, the residual stress may not be effectively distributed among the effective regions through the pattern P. Therefore, the waviness of the deposition mask may increase. As a result, the deposition reliability of the deposition mask may decrease.

[0193] The features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, but are not limited to only one embodiment. In addition, those skilled in the art can combine or modify the features, structures, and effects shown in each embodiment for other embodiments. Therefore, it should be understood that such combinations and modifications are all included in the scope of the present invention.

[0194] In addition, the embodiments have been mainly described above, but the embodiments are merely examples and do not limit the present invention, and those skilled in the art can recognize that several variations and applications not proposed above can be made without departing from the essential features of the embodiments. For example, each component specifically shown in the embodiments can be changed. In addition, it should be understood that the differences related to such variations and such applications are included in the scope of the present invention defined by the appended claims.

Claims

1. A deposition mask, comprising: a metal plate, the metal plate including a deposition area and a non-deposition area, wherein the metal plate has a defined first direction and a second direction, the first direction being the longitudinal direction and the second direction being the width direction, wherein the deposition area includes a plurality of effective areas and non-effective areas, wherein the non-effective areas include a first non-effective area between the effective areas, wherein a plurality of through holes are provided in the effective areas, wherein at least one pattern is provided in the first non-effective area, wherein the pattern and the through holes are formed in different shapes.

2. The deposition mask according to claim 1, wherein, the first non-effective area includes a first pattern portion and a second pattern portion, the first pattern portion including a plurality of first patterns; the second pattern portion including a plurality of second patterns, wherein the first pattern portion and the second pattern portion are spaced apart from each other in the first direction.

3. The deposition mask according to claim 1, wherein, the first non-effective area includes a first pattern portion, a second pattern portion and a third pattern portion, the first pattern portion including a plurality of first patterns; the second pattern portion including a plurality of second patterns; the third pattern portion including a plurality of third patterns, wherein the first pattern portion, the second pattern portion and the third pattern portion are spaced apart from each other in the first direction, wherein the number of patterns in the first pattern portion, the second pattern portion and the third pattern portion is different.

4. The deposition mask according to claim 3, wherein, the number of patterns decreases when extending from the outside to the inside of the first non-effective area in the first direction; wherein the number of patterns increases when extending from the outside to the inside of the first non-effective area in the second direction.

5. The deposition mask according to claim 3, wherein, the number of patterns increases when extending from the outside to the inside of the first non-effective area in the first direction; wherein the number of patterns increases when extending from the outside to the inside of the first non-effective area in the second direction.

6. The deposition mask according to claim 1, wherein, the number of patterns at both ends of the effective area arranged in the first direction is different.

7. The deposition mask according to claim 1, wherein, the first non-effective area includes a 1-1 non-effective area and a 1-2 non-effective area spaced apart in the first direction, with one effective area between the 1-1 non-effective area and the 1-2 non-effective area, wherein the number of patterns provided in the 1-1 non-effective area and the number of patterns provided in the 1-2 non-effective area are different.

8. The deposition mask according to claim 1, wherein, the width of at least one of the plurality of effective areas varies when extending in the first direction or the second direction.

9. The deposition mask according to claim 1, wherein, The first non-effective region includes a first pattern portion, a second pattern portion, and a third pattern portion. The first pattern portion includes a plurality of first patterns; the second pattern portion includes a plurality of second patterns; the third pattern portion includes a plurality of third patterns. Wherein, the first pattern portion, the second pattern portion, and the third pattern portion are spaced apart from each other in the first direction. Wherein, the first pattern, the second pattern, and the third pattern have different sizes.

10. The deposition mask according to claim 9. Wherein, The size of the pattern decreases or increases when extending from the end of the effective region towards the central portion of the first non-effective region.

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