Sputtering film thickness control system, method and sputtering equipment

Abstract

The present application relates to the technical field of sputtering thin film deposition, and specifically provides a sputtering thin film thickness control system, method and sputtering equipment, the system comprising: a sputtering machine, which comprises a sputtering chamber, wherein the sputtering chamber is provided with a tray for placing a substrate to be sputtered; a film thickness measuring component, which is arranged in the sputtering chamber and is used to collect actual film thickness information of the substrate to be sputtered; a controller, which is used to control the sputtering machine to perform a sputtering process on the substrate to be sputtered until the actual film thickness information reaches a target film thickness; the system can effectively solve the problem of inconsistent film thickness formed by different batches of sputtering thin film deposition processes due to differences in the relationship between time and film deposition rate of different batches of sputtering thin film deposition processes.

Description

Technical Field

[0001] The present application relates to the technical field of sputtering thin film deposition, and in particular to a sputtering thin film thickness control system, method and sputtering equipment. Background Art

[0002] In the semiconductor industry and materials science research, a thin film is usually formed on the surface of a substrate through a sputtering thin film deposition process. The termination condition of the relevant sputtering thin film deposition process is that the execution time of the sputtering thin film deposition process reaches a preset time. Since the film deposition rate of the sputtering thin film deposition process is related to the sputtering process parameters of the sputtering thin film deposition process, the actual sputtering process parameters of different batches of sputtering thin film deposition processes at the same time node may be different, that is, the film deposition rates of different batches of sputtering thin film deposition processes at the same time node may be different. The related technology only controls the end of the sputtering thin film deposition process based on the execution time of the sputtering thin film deposition process. Therefore, the related technology has the problem of inconsistent film thickness formed by different batches of sputtering thin film deposition processes due to the difference in the relationship between time and film deposition rate of different batches of sputtering thin film deposition processes, thereby resulting in poor consistency of film thickness formed by the sputtering thin film deposition process.

[0003] There is no effective technical solution to the above problems. It should be noted that the above information disclosed in this section is only used to understand the background of the present invention, and therefore may contain information that does not constitute prior art. Summary of the Invention

[0004] The purpose of the present application is to provide a sputtering film thickness control system, method and sputtering equipment, which can effectively solve the problem of inconsistent film thickness formed by different batches of sputtering film deposition processes due to differences in the relationship between time and film deposition rate in different batches of sputtering film deposition processes.

[0005] In a first aspect, the present application provides a sputtering film thickness control system, comprising:

[0006] The sputtering machine includes a sputtering chamber, wherein a tray for placing a substrate to be sputtered is provided in the sputtering chamber;

[0007] A film thickness measurement component is provided in the sputtering chamber and is used to collect actual film thickness information of the substrate to be sputtered;

[0008] The controller is used to control the sputtering machine to perform a sputtering process on the substrate to be sputtered until the actual film thickness information reaches the target film thickness.

[0009] The present application provides a sputtering film thickness control system, which can detect the thickness of the film formed on the substrate to be sputtered in real time by utilizing a film thickness measuring component and use the actual film thickness information reaching the target film thickness as the end condition of the sputtering film deposition process so that the film thickness formed by different batches of sputtering film deposition processes is the target film thickness. That is, even if there are differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, the thickness of the films finally formed on the substrate to be sputtered of different batches can also be kept consistent. Therefore, the present application can effectively solve the problem of inconsistent film thickness formed by different batches of sputtering film deposition processes due to differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, thereby effectively improving the consistency of film thickness formed by the sputtering film deposition process.

[0010] Optionally, the controller is also used to periodically obtain the expected film thickness based on the sputtering time information and the preset conversion relationship during the sputtering process on the sputtered substrate, and adjust the sputtering process parameters of the sputtering machine when the actual film thickness information is different from the expected film thickness.

[0011] This technical solution is equivalent to periodically analyzing whether there is an abnormality in the film deposition rate during the execution of the sputtering film deposition process, and adjusting the film deposition rate by adjusting the sputtering process parameters of the sputtering machine when there is an abnormality in the film deposition rate. Therefore, this technical solution can stabilize the actual film deposition rate near the expected film deposition rate, so as to avoid the situation where the quality of the film formed on the substrate to be sputtered is reduced due to the film deposition rate being too fast, and the time required for the actual film thickness information to reach the target film thickness is too long due to the film deposition rate being too low.

[0012] Optionally, the process of the controller adjusting the sputtering process parameters of the sputtering machine when the actual film thickness information is different from the expected film thickness includes:

[0013] When the actual film thickness information is not equal to the expected film thickness, obtaining a process parameter adjustment amount according to the difference between the actual film thickness information and the expected film thickness;

[0014] Adjust the sputtering process parameters of the sputtering machine according to the process parameter adjustment amount.

[0015] Optionally, the process of the controller obtaining the process parameter adjustment amount according to the difference between the actual film thickness information and the expected film thickness includes:

[0016] The process parameter adjustment amount is obtained according to the change in the difference between the actual film thickness information and the expected film thickness within a preset time.

[0017] Since this technical solution obtains the process parameter adjustment amount based on the change in the difference between the actual film thickness information and the expected film thickness over a period of time, that is, this technical solution is equivalent to determining the process parameter adjustment amount based on the changing trend of the difference between the actual film thickness information and the expected film thickness, this technical solution can effectively improve the accuracy of the obtained process parameter adjustment amount.

[0018] Optionally, the process parameter adjustment amount includes a substrate temperature adjustment amount, and the sputtering machine further includes a tray temperature adjustment component. When the actual film thickness information is greater than the expected film thickness and the actual substrate temperature is within a preset temperature range, the substrate temperature adjustment amount is a negative value; when the actual film thickness information is less than the expected film thickness and the actual substrate temperature is within the preset temperature range, the substrate temperature adjustment amount is a positive value. The process of the controller adjusting the sputtering process parameters of the sputtering machine according to the process parameter adjustment amount includes:

[0019] The tray temperature adjustment component is controlled to adjust the temperature of the tray according to the substrate temperature adjustment amount, so as to adjust the actual substrate temperature.

[0020] Optionally, the film thickness measurement component includes multiple thickness measurement components, and the multiple thickness measurement components are used to measure the actual film thickness information of different areas on the substrate to be sputtered. The tray temperature control component includes multiple temperature control units, and at least one temperature control unit is provided in each area corresponding to each actual film thickness information. The controller is also used to analyze whether there is a thickness abnormality area on the substrate to be sputtered based on the average value of all actual film thickness information and the actual film thickness information. The thickness abnormality area is an area where the difference between the actual film thickness information corresponding to it and the average value of all actual film thickness information is greater than a preset difference. The controller is also used to control the temperature control unit in the thickness abnormality area to increase or decrease the temperature of the area where it is located based on the actual film thickness information corresponding to the thickness abnormality area and the average value of all actual film thickness information when there is a thickness abnormality area.

[0021] Since this technical solution can analyze whether there is an abnormal thickness area on the film to be sputtered by setting up multiple thickness measuring components, and when there is an abnormal thickness area, it can adjust the film deposition rate in the abnormal thickness area by controlling the temperature adjustment unit in the abnormal thickness area to increase or decrease the temperature of the area where the abnormal thickness area is located. Therefore, this technical solution is equivalent to partitioning the film deposition rate of the substrate to be sputtered to reduce the difference in actual film thickness information of different areas on the substrate to be sputtered, thereby effectively improving the uniformity of the film thickness formed on the substrate to be sputtered.

[0022] Optionally, the process parameter adjustment amount includes a sputtering power adjustment amount, and the sputtering machine further includes a power adjustment component. When the actual film thickness information is greater than the expected film thickness and the actual sputtering power is within a preset power range, the sputtering power adjustment amount is a negative value; when the actual film thickness information is less than the expected film thickness and the actual sputtering power is within the preset power range, the sputtering power adjustment amount is a positive value. The process of the controller adjusting the sputtering process parameters of the sputtering machine according to the process parameter adjustment amount includes:

[0023] The power regulating component is controlled to regulate the actual sputtering power according to the sputtering power regulation amount.

[0024] Optionally, the process parameter adjustment amount includes a spacing adjustment amount, and the sputtering machine further includes a target position adjustment component. When the actual film thickness information is greater than the expected film thickness and the actual spacing between the target and the substrate to be sputtered is within a preset spacing range, the spacing adjustment amount is a negative value; when the actual film thickness information is less than the expected film thickness and the actual spacing between the target and the substrate to be sputtered is within the preset spacing range, the spacing adjustment amount is a positive value. The process of the controller adjusting the sputtering process parameters of the sputtering machine according to the process parameter adjustment amount includes:

[0025] The target position adjustment assembly is controlled to move according to the distance adjustment amount to adjust the actual distance between the target and the substrate to be sputtered.

[0026] In a second aspect, the present application further provides a sputtering film thickness control method, which is applied to a sputtering film thickness control system provided in the first aspect above. The sputtering film thickness control method comprises the following steps:

[0027] S1. Control the sputtering machine to perform a sputtering process on the substrate to be sputtered until the actual film thickness information reaches the target film thickness.

[0028] The present application provides a sputtering film thickness control method, which can achieve the target film thickness by using a film thickness measuring component to detect the thickness of the film formed on the substrate to be sputtered in real time and using the actual film thickness information reaching the target film thickness as the end condition of the sputtering film deposition process. That is, even if there are differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, the thickness of the films finally formed on the substrates to be sputtered of different batches can also be kept consistent. Therefore, the present application can effectively solve the problem of inconsistent film thickness formed by different batches of sputtering film deposition processes due to differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, thereby effectively improving the consistency of film thickness formed by the sputtering film deposition process.

[0029] In a third aspect, the present application further provides a sputtering device, which includes a sputtering film thickness control system provided in the first aspect above.

[0030] The present application provides a sputtering device that can detect the thickness of the film formed on the substrate to be sputtered in real time by utilizing a film thickness measuring component and use the actual film thickness information reaching the target film thickness as the end condition of the sputtering film deposition process so that the film thickness formed by different batches of sputtering film deposition processes is the target film thickness. That is, even if there are differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, the thickness of the films finally formed on the substrates to be sputtered of different batches can also be kept consistent. Therefore, the present application can effectively solve the problem of inconsistent film thickness formed by different batches of sputtering film deposition processes due to differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, thereby effectively improving the consistency of film thickness formed by the sputtering film deposition process.

[0031] From the above, it can be seen that the sputtering film thickness control system, method and sputtering equipment provided by the present application can detect the thickness of the film formed on the substrate to be sputtered in real time by using a film thickness measuring component and use the actual film thickness information reaching the target film thickness as the end condition of the sputtering film deposition process so that the film thickness formed by different batches of sputtering film deposition processes is the target film thickness. That is, even if there are differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, the thickness of the films finally formed on the substrates to be sputtered of different batches can also be kept consistent. Therefore, the present application can effectively solve the problem of inconsistent film thickness formed by different batches of sputtering film deposition processes due to differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, thereby effectively improving the consistency of film thickness formed by the sputtering film deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A schematic diagram of the control relationship of a sputtering film thickness control system provided in an embodiment of the present application.

[0033] Figure 2 A schematic structural diagram of a sputtering film thickness control system provided in an embodiment of the present application.

[0034] Figure numerals: 1. sputtering machine; 2. film thickness measurement component; 3. controller; 4. sputtering chamber; 5. substrate to be sputtered; 6. tray; 7. tray temperature control component; 8. target material; 9. target material position adjustment component; 10. power adjustment component. DETAILED DESCRIPTION

[0035] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work fall within the scope of protection of the present application.

[0036] It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and should not be understood as indicating or implying relative importance.

[0037] First, as Figure 1 and Figure 2 As shown, the present application provides a sputtering film thickness control system, which includes:

[0038] A sputtering machine 1 includes a sputtering chamber 4 , wherein a tray 6 for placing a substrate 5 to be sputtered is provided in the sputtering chamber 4 ;

[0039] The film thickness measuring assembly 2 is provided in the sputtering chamber 4 and is used to collect actual film thickness information of the substrate 5 to be sputtered;

[0040] The controller 3 is used to control the sputtering machine 1 to perform a sputtering process on the substrate 5 to be sputtered until the actual film thickness information reaches the target film thickness.

[0041] The sputtering machine 1 of this embodiment is a device for performing a sputtering thin film deposition process. The sputtering machine 1 can be a magnetron sputtering machine or an ion beam sputtering machine. The sputtering machine 1 includes a sputtering chamber 4, which is a chamber for performing a sputtering thin film deposition process. A tray 6 is provided in the sputtering chamber 4 for placing a substrate 5 to be sputtered. The substrate 5 to be sputtered is a substrate whose surface needs to form a thin film. The film thickness measuring component 2 of this embodiment can be a component that can detect the thickness of an object, such as a thickness measuring instrument or a thickness sensor. It should be understood that in order to avoid the film thickness measuring component 2 interfering with the movement of ions sputtered from the target 8, the film thickness measuring component 2 of this embodiment is arranged in an area outside the target 8 in the sputtering chamber 4 and is tilted toward the substrate 5 to be sputtered. Since the position of the film thickness measuring component 2 in the sputtering chamber 4 does not change, the position of the tray 6 in the sputtering chamber 4 will not change, that is, the conversion relationship between the film thickness measuring component 2 and the tray 6 can be measured in advance, so this embodiment can use the conversion relationship between the film thickness measuring component 2 and the tray 6 to measure the film thickness. The data measured by the thickness measurement component 2 is converted into data in the vertical direction, that is, this embodiment is equivalent to using the conversion relationship between the film thickness measurement component 2 and the tray 6 to convert the inclined data into vertical data. Since the initial thickness of the substrate 5 to be sputtered can be obtained by pre-measurement, and the vertical data converted from the data measured by the film thickness measurement component 2 is the sum of the thickness of the substrate 5 to be sputtered and the thickness of the thin film deposited thereon, this embodiment can obtain actual film thickness information by subtracting the initial thickness of the substrate 5 to be sputtered from the vertical data converted from the data measured by the film thickness measurement component 2. The actual film thickness information is the actual thickness of the thin film formed on the substrate 5 to be sputtered.

[0042] The controller 3 of this embodiment is electrically connected to the sputtering machine 1 and the film thickness measurement component 2, respectively. The controller 3 of this embodiment can control the sputtering machine 1 to start or stop the sputtering process. The target film thickness of this embodiment is the thickness of the film to be formed on the substrate 5 to be sputtered, and the target film thickness is equivalent to the ideal thickness of the film formed on the substrate. Since this embodiment can use the film thickness measurement component 2 to perform real-time detection of the thickness of the film formed on the substrate 5 to be sputtered, this embodiment can use the actual film thickness information reaching the target film thickness as the end condition of the sputtering film deposition process. Since this embodiment uses the actual film thickness information reaching the target film thickness as the end condition of the sputtering film deposition process, after the sputtering film deposition process ends, the thickness of the film formed on the substrate 5 to be sputtered will not change significantly. Therefore, this embodiment can ensure that the film thicknesses obtained by different batches of sputtering film deposition processes are all the target film thicknesses, that is, the film thicknesses formed by different batches of sputtering film deposition processes are consistent.

[0043] A sputtering film thickness control system provided in the present application can detect the thickness of the film formed on the substrate to be sputtered 5 in real time by utilizing a film thickness measuring component 2 and using the actual film thickness information reaching the target film thickness as the end condition of the sputtering film deposition process so that the film thickness formed by different batches of sputtering film deposition processes is the target film thickness. That is, even if there are differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, the thickness of the films finally formed on the substrate to be sputtered 5 of different batches can also be kept consistent. Therefore, the present application can effectively solve the problem of inconsistent film thickness formed by different batches of sputtering film deposition processes due to differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, thereby effectively improving the consistency of film thickness formed by the sputtering film deposition process.

[0044] In some preferred embodiments, the controller 3 is also used to periodically obtain the expected film thickness based on the sputtering duration information and the preset conversion relationship during the sputtering process of the substrate to be sputtered 5, and adjust the sputtering process parameters of the sputtering machine 1 when the actual film thickness information is not equal to the expected film thickness. The sputtering duration information of this embodiment is the duration of the sputtering machine 1 performing the sputtering film deposition process. The sputtering duration information can be obtained by the output of the sputtering machine 1. It should be understood that at the end of the sputtering film deposition process, the sputtering duration information is cleared. The preset conversion relationship of this embodiment can be a pre-constructed mapping relationship between sputtering duration and film thickness. This embodiment can obtain the corresponding expected film thickness from the preset conversion relationship according to the sputtering duration information by data extraction. The expected film thickness is the ideal value of the film thickness formed on the substrate to be sputtered 5 when the execution duration of the sputtering film deposition process is the sputtering duration information. If the actual film thickness information is not equal to the expected film thickness, it indicates that there is an abnormality in the film deposition rate. Specifically, if the actual film thickness information is greater than the expected film thickness, it indicates that the film deposition rate is too fast. If the actual film thickness information is less than the expected film thickness, it indicates that the film deposition rate is too slow. A film deposition rate that is too fast may result in a decrease in the quality of the film formed on the substrate 5 to be sputtered. A film deposition rate that is too slow may result in an excessively long time for the actual film thickness information to reach the target film thickness. Therefore, when the actual film thickness information is not equal to the expected film thickness, this embodiment requires adjusting the sputtering process parameters of the sputtering machine 1. This embodiment is equivalent to periodically analyzing whether there is an abnormality in the film deposition rate during the sputtering film deposition process, and adjusting the film deposition rate by adjusting the sputtering process parameters of the sputtering machine 1 when an abnormality in the film deposition rate exists. Therefore, this embodiment can stabilize the actual film deposition rate near the expected film deposition rate (the ideal value of the film deposition rate), thereby avoiding the situation where the quality of the film formed on the substrate 5 to be sputtered is decreased due to an excessively fast film deposition rate, or the situation where the actual film thickness information is excessively long due to an excessively slow film deposition rate.

[0045] In some preferred embodiments, the process of the controller 3 adjusting the sputtering process parameters of the sputtering machine 1 when the actual film thickness information is different from the expected film thickness includes:

[0046] When the actual film thickness information is not equal to the expected film thickness, obtaining a process parameter adjustment amount according to the difference between the actual film thickness information and the expected film thickness;

[0047] The sputtering process parameters of the sputtering machine 1 are adjusted according to the process parameter adjustment amount.

[0048] Since the film deposition rate is associated with the sputtering process parameters of the sputtering machine 1, that is, this embodiment can adjust the actual film deposition rate by adjusting the sputtering process parameters, therefore, when the actual film thickness information is not equal to the expected film thickness (equivalent to the actual film deposition rate being not equal to the expected film deposition rate), this embodiment needs to adjust the actual film deposition rate. Specifically, this embodiment can obtain the process parameter adjustment amount according to the difference between the actual film thickness information and the expected film thickness based on the existing sputtering process parameter adjustment method, and adjust the sputtering process parameters of the sputtering machine 1 according to the process parameter adjustment amount, so that the actual film deposition rate is equal to the expected film deposition rate or the difference between the actual film deposition rate and the expected film deposition rate is less than the preset value.

[0049] In some preferred embodiments, the process of the controller 3 obtaining the process parameter adjustment amount according to the difference between the actual film thickness information and the expected film thickness includes:

[0050] The process parameter adjustment amount is obtained according to the change in the difference between the actual film thickness information and the expected film thickness within a preset time.

[0051] Since this embodiment obtains the process parameter adjustment amount based on the change in the difference between the actual film thickness information and the expected film thickness over a period of time, that is, this embodiment is equivalent to determining the process parameter adjustment amount based on the change trend of the difference between the actual film thickness information and the expected film thickness, this embodiment can effectively improve the accuracy of the obtained process parameter adjustment amount.

[0052] In some preferred embodiments, the process parameter adjustment amount includes a substrate temperature adjustment amount, and the sputtering machine 1 further includes a tray temperature adjustment component 7. When the actual film thickness information is greater than the expected film thickness and the actual substrate temperature is within a preset temperature range, the substrate temperature adjustment amount is a negative value. When the actual film thickness information is less than the expected film thickness and the actual substrate temperature is within the preset temperature range, the substrate temperature adjustment amount is a positive value. The process of the controller 3 adjusting the sputtering process parameters of the sputtering machine 1 according to the process parameter adjustment amount includes:

[0053] The tray temperature adjustment component 7 is controlled to adjust the temperature of the tray 6 according to the substrate temperature adjustment amount, so as to adjust the actual substrate temperature.

[0054] The process parameter adjustment amount of this embodiment includes the substrate temperature adjustment amount, that is, the sputtering process parameters of this embodiment include the substrate temperature. The tray temperature control component 7 of this embodiment is preferably a semiconductor temperature control component, and the semiconductor temperature control component has two working surfaces. Specifically, when the semiconductor temperature control component is working, one of the working surfaces generates heat and the other working surface generates cold. Under the action of the Peltier effect, this embodiment can change the direction of the current to make the working surface that originally generates cold generate heat and the working surface that originally generates heat generate cold. The substrate temperature of this embodiment is the temperature of the substrate 5 to be sputtered. Since the substrate 5 to be sputtered in this embodiment is placed on the tray 6, that is, the substrate 5 to be sputtered can exchange heat with the tray 6, this embodiment can adjust the substrate temperature by adjusting the temperature of the tray 6 using the tray temperature control component 7. Since the film deposition rate of the sputtering film deposition process is related to the substrate temperature, this embodiment can adjust the film deposition rate by controlling the tray temperature control component 7 to increase or decrease the temperature of the tray 6.

[0055] In some preferred embodiments, the film thickness measuring component 2 includes multiple thickness measuring components, and the multiple thickness measuring components are used to measure the actual film thickness information of different areas on the substrate 5 to be sputtered. The tray temperature control component 7 includes multiple temperature control units, and at least one temperature control unit is provided in the area corresponding to each actual film thickness information. The controller 3 is also used to analyze whether there is a thickness abnormality area on the substrate 5 to be sputtered based on the average value of all actual film thickness information and the actual film thickness information. The thickness abnormality area is an area where the difference between the actual film thickness information corresponding to it and the average value of all actual film thickness information is greater than a preset difference. The controller 3 is also used to control the temperature control unit in the thickness abnormality area to increase or decrease the temperature of the area where it is located according to the actual film thickness information corresponding to the thickness abnormality area and the average value of all actual film thickness information when there is a thickness abnormality area. If the difference between the actual film thickness information corresponding to a certain region and the average value of all actual film thickness information is greater than a preset difference, it indicates that the film formed in the region is too thick or too thin. Since the film deposition rate in the sputtering film deposition process is associated with the substrate temperature, this embodiment can adjust the film deposition rate in the thickness-abnormal region by controlling the temperature adjustment unit in the thickness-abnormal region to increase or decrease the temperature of the region in which it is located, thereby reducing the difference in actual film thickness information between different regions on the substrate 5 to be sputtered. Since this embodiment can analyze whether there is a thickness-abnormal region on the film to be sputtered by providing multiple thickness measurement components, and adjust the film deposition rate in the thickness-abnormal region by controlling the temperature adjustment unit in the thickness-abnormal region to increase or decrease the temperature of the region in which it is located when a thickness-abnormal region exists, this embodiment is equivalent to adjusting the film deposition rate of the substrate 5 to be sputtered by region, thereby reducing the difference in actual film thickness information between different regions on the substrate 5 to be sputtered, thereby effectively improving the thickness uniformity of the film formed on the substrate 5 to be sputtered. Preferably, this embodiment can divide the substrate 5 to be sputtered into multiple regions using grid lines. This embodiment can also divide the substrate 5 to be sputtered into multiple regions by constructing multiple rings with the center of the substrate 5 to be sputtered.

[0056] In some preferred embodiments, the process parameter adjustment amount includes a sputtering power adjustment amount, and the sputtering machine 1 further includes a power adjustment component 10. When the actual film thickness information is greater than the expected film thickness and the actual sputtering power is within a preset power range, the sputtering power adjustment amount is a negative value; when the actual film thickness information is less than the expected film thickness and the actual sputtering power is within the preset power range, the sputtering power adjustment amount is a positive value. The process of the controller 3 adjusting the sputtering process parameters of the sputtering machine 1 according to the process parameter adjustment amount includes:

[0057] The power regulating component 10 is controlled to regulate the actual sputtering power according to the sputtering power regulation amount.

[0058] The process parameter adjustment amount of this embodiment includes the sputtering power adjustment amount, that is, the sputtering process parameter of this embodiment includes the sputtering power. Since the film deposition rate of the sputtering film deposition process is related to the sputtering power, this embodiment can adjust the film deposition rate by controlling the tray temperature control component 7 to increase or decrease the sputtering power.

[0059] In some preferred embodiments, the process parameter adjustment amount includes a spacing adjustment amount, and the sputtering machine 1 further includes a target position adjustment component 9. When the actual film thickness information is greater than the expected film thickness and the actual spacing between the target 8 and the substrate to be sputtered 5 is within the preset spacing range, the spacing adjustment amount is a negative value. When the actual film thickness information is less than the expected film thickness and the actual spacing between the target 8 and the substrate to be sputtered 5 is within the preset spacing range, the spacing adjustment amount is a positive value. The process of the controller 3 adjusting the sputtering process parameters of the sputtering machine 1 according to the process parameter adjustment amount includes:

[0060] The target position adjustment assembly 9 is controlled to move according to the distance adjustment amount to adjust the actual distance between the target 8 and the substrate 5 to be sputtered.

[0061] The process parameter adjustment amount of this embodiment includes a spacing adjustment amount, that is, the sputtering process parameters of this embodiment include the spacing between the target material 8 and the substrate to be sputtered 5. The target position adjustment component 9 of this embodiment can be an existing linear drive mechanism. The target position adjustment component 9 can reduce or increase the spacing between the target material 8 and the substrate to be sputtered 5 by driving the target material 8 to move linearly toward or away from the substrate to be sputtered 5. Since the film deposition rate of the sputtering thin film deposition process is associated with the spacing between the target material 8 and the substrate to be sputtered 5, this embodiment can adjust the film deposition rate by controlling the target position adjustment component 9 to drive the target material 8 to move away from or toward the substrate to be sputtered 5.

[0062] It should be understood that when the thin film deposition rate needs to be adjusted, this embodiment can select any one or more of the substrate temperature, the sputtering power, and the distance between the target 8 and the substrate 5 to be sputtered for adjustment.

[0063] From the above, it can be seen that the sputtering film thickness control system provided by the present application can make the film thickness formed by different batches of sputtering film deposition processes the target film thickness by utilizing the film thickness measuring component 2 to detect the film thickness formed on the substrate 5 to be sputtered in real time and using the actual film thickness information to reach the target film thickness as the end condition of the sputtering film deposition process. That is, even if there are differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, the thickness of the films finally formed on the substrates 5 to be sputtered of different batches can also be kept consistent. Therefore, the present application can effectively solve the problem of inconsistent film thickness formed by different batches of sputtering film deposition processes due to differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, thereby effectively improving the consistency of film thickness formed by the sputtering film deposition process.

[0064] In a second aspect, the present application further provides a sputtering film thickness control method, which is applied to a sputtering film thickness control system provided in the first aspect above. The sputtering film thickness control method comprises the following steps:

[0065] S1 . Control the sputtering machine 1 to perform a sputtering process on the substrate 5 to be sputtered until the actual film thickness information reaches the target film thickness.

[0066] The present application provides a method for controlling the thickness of a sputtered film, which is applied to a sputtered film thickness control system provided in the first aspect above. The principle of the sputtered film thickness control method provided in this embodiment is the same as the principle of a sputtered film thickness control system provided in the first aspect above, and will not be discussed in detail here.

[0067] In a third aspect, the present application further provides a sputtering device, which includes a sputtering film thickness control system provided in the first aspect above.

[0068] The present application provides a sputtering device, which includes a sputtering film thickness control system provided in the first aspect above. The principle of the sputtering device provided in this embodiment is the same as the principle of a sputtering film thickness control system provided in the first aspect above, and will not be discussed in detail here.

[0069] From the above, it can be seen that the sputtering film thickness control system, method and sputtering equipment provided by the present application can detect the thickness of the film formed on the substrate to be sputtered 5 in real time by using the film thickness measuring component 2 and using the actual film thickness information to reach the target film thickness as the end condition of the sputtering film deposition process, so that the film thickness formed by different batches of sputtering film deposition processes is the target film thickness. That is, even if there are differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, the thickness of the films finally formed on the substrate to be sputtered 5 of different batches can also be kept consistent. Therefore, the present application can effectively solve the problem of inconsistent film thickness formed by different batches of sputtering film deposition processes due to differences in the relationship between time and film deposition rate of different batches of sputtering film deposition processes, thereby effectively improving the consistency of film thickness formed by the sputtering film deposition process.

[0070] In the embodiments provided in the present application, it should be understood that, in this document, relational terms such as first and second, etc., are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0071] The above description is merely an embodiment of the present application and is not intended to limit the scope of protection of the present application. For those skilled in the art, various modifications and variations of the present application are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A sputtering film thickness control system, characterized in that: The sputtering film thickness control system includes: A sputtering machine comprises a sputtering chamber, wherein a tray for placing a substrate to be sputtered is provided in the sputtering chamber; A film thickness measurement component is provided in the sputtering chamber and is used to collect actual film thickness information of the substrate to be sputtered; a controller, configured to control the sputtering machine to perform a sputtering process on the substrate to be sputtered until the actual film thickness information reaches a target film thickness; The controller is further configured to periodically obtain an expected film thickness based on sputtering duration information and a preset conversion relationship during a sputtering process on the substrate to be sputtered, and adjust a sputtering process parameter of the sputtering machine when the actual film thickness information is different from the expected film thickness; The process of the controller adjusting the sputtering process parameters of the sputtering machine when the actual film thickness information is different from the expected film thickness includes: When the actual film thickness information is not equal to the expected film thickness, obtaining a process parameter adjustment amount according to a difference between the actual film thickness information and the expected film thickness; adjusting the sputtering process parameters of the sputtering machine according to the process parameter adjustment amount; The process parameter adjustment amount includes a substrate temperature adjustment amount, and the sputtering machine further includes a tray temperature adjustment component, wherein the substrate temperature adjustment amount is a negative value when the actual film thickness information is greater than the expected film thickness and the actual substrate temperature is within a preset temperature range, and the substrate temperature adjustment amount is a positive value when the actual film thickness information is less than the expected film thickness and the actual substrate temperature is within the preset temperature range; The film thickness measurement component includes multiple thickness measurement components, and the multiple thickness measurement components are used to measure the actual film thickness information of different areas on the substrate to be sputtered. The tray temperature control component includes multiple temperature control units, and at least one temperature control unit is provided in each area corresponding to the actual film thickness information. The controller is also used to analyze whether there is an abnormal thickness area on the substrate to be sputtered based on the average value of all the actual film thickness information and the actual film thickness information. The abnormal thickness area is an area where the difference between the actual film thickness information corresponding to it and the average value of all the actual film thickness information is greater than a preset difference.

2. The sputtering film thickness control system according to claim 1, characterized in that: The process of the controller obtaining the process parameter adjustment amount according to the difference between the actual film thickness information and the expected film thickness includes: The process parameter adjustment amount is obtained according to the change amount of the difference between the actual film thickness information and the expected film thickness within a preset time.

3. The sputtering film thickness control system according to claim 1, characterized in that: The process of the controller adjusting the sputtering process parameters of the sputtering machine according to the process parameter adjustment amount includes: The tray temperature adjustment component is controlled to adjust the temperature of the tray according to the substrate temperature adjustment amount, so as to adjust the actual substrate temperature.

4. The sputtering film thickness control system according to claim 3, characterized in that: The controller is further configured to control the temperature regulating unit in the abnormal thickness area to increase or decrease the temperature of the area according to the actual film thickness information corresponding to the abnormal thickness area and the average value of all the actual film thickness information when the abnormal thickness area exists.

5. The sputtering film thickness control system according to claim 1, characterized in that: The process parameter adjustment amount includes a sputtering power adjustment amount, and the sputtering machine further includes a power adjustment component. When the actual film thickness information is greater than the expected film thickness and the actual sputtering power is within a preset power range, the sputtering power adjustment amount is a negative value; when the actual film thickness information is less than the expected film thickness and the actual sputtering power is within the preset power range, the sputtering power adjustment amount is a positive value. The process of the controller adjusting the sputtering process parameters of the sputtering machine according to the process parameter adjustment amount includes: The power regulating component is controlled to regulate actual sputtering power according to the sputtering power regulation amount.

6. The sputtering film thickness control system according to claim 1, characterized in that: The process parameter adjustment amount includes a spacing adjustment amount, and the sputtering machine further includes a target position adjustment component. When the actual film thickness information is greater than the expected film thickness and the actual spacing between the target and the substrate to be sputtered is within a preset spacing range, the spacing adjustment amount is a negative value. When the actual film thickness information is less than the expected film thickness and the actual spacing between the target and the substrate to be sputtered is within the preset spacing range, the spacing adjustment amount is a positive value. The process of the controller adjusting the sputtering process parameters of the sputtering machine according to the process parameter adjustment amount includes: The target position adjustment assembly is controlled to move according to the distance adjustment amount to adjust the actual distance between the target and the substrate to be sputtered.

7. A method for controlling the thickness of a sputtered film, characterized in that: The sputtering film thickness control method is applied to the sputtering film thickness control system according to any one of claims 1 to 6, and the sputtering film thickness control method includes: S1. Control the sputtering machine to perform a sputtering process on the substrate to be sputtered until the actual film thickness information reaches the target film thickness.

8. A sputtering device, characterized in that: The sputtering device includes the sputtering film thickness control system according to any one of claims 1 to 6.

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