A manufacturing method of a three-dimensional optical waveguide glass chip

Abstract

The invention relates to the field of integrated optical waveguide fabrication technology, and more particularly to a method for manufacturing a three-dimensional optical waveguide glass chip. The method comprises: forming a two-dimensional optical waveguide structure on the surface of a glass chip wafer through an ion exchange process; and burying the optical waveguides on the surface of the processed glass chip wafer with a matrix electrode chip wafer in a controlled depth, ultimately producing a three-dimensional optical waveguide glass chip. The electrodes in the matrix electrode chip can be one-dimensional matrix electrodes and / or two-dimensional matrix electrodes, and the appropriate matrix electrode chip structure can be designed based on whether the depth distribution of the buried optical waveguide array is consistent. The present invention utilizes a matrix electrode method to control the electric field, burying the optical waveguides in the two-dimensional optical waveguide glass chip wafer with controlled depth differences, thereby achieving the manufacture of a three-dimensional optical waveguide glass chip. The manufacturing method of the present invention has the advantages of wide applicability, low production cost, and high manufacturing precision.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated optical waveguide preparation, and in particular to a method for manufacturing a three-dimensional optical waveguide glass chip. Background Art

[0002] Ion exchange is a common process for manufacturing glass-based optical waveguide chips. Its principle is to exchange sodium ions in the glass for larger ions such as silver and potassium, thereby locally modifying the material to change its refractive index and thus manufacturing an optical waveguide. Common types of ion exchange optical waveguides can be divided into planar optical waveguides, channel optical waveguides and buried optical waveguides. The main process methods are as follows: Figure 1 However, the current ion-exchange-based glass-based optical waveguide chip manufacturing method can only produce two-dimensional optical waveguides, which have no difference in depth. However, the optical input and output interfaces of the next-generation data transmission chips are not necessarily at the same height, which requires the optical waveguide to have a three-dimensional structure, which is difficult to meet with current manufacturing technology.

[0003] To address the above-mentioned issues, researchers in this field have conducted research. For example, patent application CN03676001B discloses a method for manufacturing three-dimensional glass waveguides. First, a ridge-type, groove-type, or step-type three-dimensional glass structure is fabricated on a soda-lime glass substrate using a wet or dry etching process or laser micromachining technology. The etched glass substrate is then subjected to ion exchange to produce a ridge-type glass waveguide, a sidewall-type glass waveguide, or a ridge / sidewall-type coupled glass waveguide. While this prior art method for manufacturing three-dimensional glass waveguides can produce high-precision three-dimensional glass waveguides, it still suffers from a limited scope of application. Another example is patent application CN118534578A, which discloses a method for manufacturing a three-dimensional gradient optical waveguide. This method uses ion exchange in a target area on a glass wafer to create waveguides with different refractive indices in two steps, which are then overlapped: the first step has a low refractive index, and the second step has a high refractive index, resulting in a waveguide cross-section with a high refractive index in the middle and a low refractive index at the edge. The same process is used to manufacture two identical glass wafers and splice them together to form a waveguide with a nearly circular cross section in the middle. Although this method can achieve the manufacture of waveguide cross sections with large refractive index differences and the realization of refractive index changes along the Y direction, such as Figure 7 As shown; however, this method only realizes the three-dimensional distribution of the refractive index on the waveguide cross section, but cannot realize the three-dimensional distribution of the entire waveguide. The optical waveguide manufactured by it is still a two-dimensional structure as a whole. Summary of the Invention

[0004] The present invention aims to overcome the deficiencies of the prior art and provide a method for manufacturing a three-dimensional optical waveguide glass chip with wide applicability, low production cost and high manufacturing precision.

[0005] To achieve the above object, the present invention provides a method for manufacturing a three-dimensional optical waveguide glass chip, comprising the following steps:

[0006] Step S1: forming a two-dimensional optical waveguide structure on the surface of a glass chip wafer through an ion exchange process;

[0007] Step S2: using a matrix electrode chip wafer to bury the optical waveguide of the glass chip wafer processed in step S1 in a depth-controllable manner, thereby finally obtaining a three-dimensional optical waveguide glass chip.

[0008] Furthermore, the step S1 specifically includes:

[0009] Step S1.1, first cleaning the glass chip wafer using a wet method, then cleaning the glass chip wafer using deionized water, and then drying the glass chip wafer using hexamethyldisilazane gas;

[0010] Step S1.2, first sputtering an Al film on the surface of the glass chip wafer, and evenly spin-coating a photoresist on the Al film and removing the edges, and then performing a pre-baking process on the glass chip wafer; then designing a photolithography pattern on the glass chip wafer according to the waveguide shape and performing exposure, and then performing a post-baking process on the glass chip wafer; finally, developing, rinsing, and hardening the film on the glass chip wafer;

[0011] Step S1.3, wet-etching the glass chip wafer to dissolve the Al film in the waveguide area, thereby exposing the glass substrate;

[0012] Step S1.4, performing an ion exchange process on the glass chip wafer, cooling and removing the glass chip wafer after the exchange is completed;

[0013] Step S1.5: Clean the removed glass chip wafer to obtain a two-dimensional optical waveguide glass chip wafer.

[0014] Furthermore, in step S1.4, a mixed molten salt is used as an ion source for exchange; the specific ion exchange process is: first, the mixed salt is heated until it melts, and then the glass chip wafer after wet etching is placed in the mixed molten salt, so that the sodium ions in the exposed glass substrate are exchanged with the ions in the mixed molten salt.

[0015] Furthermore, the step S2 specifically includes:

[0016] Step S2.1, aligning and mounting the matrix electrode chip wafer and the two-dimensional optical waveguide glass chip wafer together, and fixing them using a wafer frame;

[0017] Step S2.2, placing the two wafers and the wafer rack as a whole into a high-temperature furnace, and connecting the matrix electrode chip wafer to an external power supply; after heating to the burying temperature, the matrix electrode chip wafer begins to be powered on, and the matrix electrode chip wafer performs a waveguide burying process on the two-dimensional structure of the optical waveguide;

[0018] Step S2.3, cooling and removing the glass chip wafer after the waveguide is buried;

[0019] Step S2.4: Slice and divide the glass chip wafer after the waveguide is buried, and grind and polish it to obtain a three-dimensional optical waveguide glass chip.

[0020] Furthermore, before step S2.1, the method further includes: designing and preparing the matrix electrode chip wafer according to the structure of the three-dimensional optical waveguide glass chip to be manufactured; the matrix electrode chip wafer includes multiple one-dimensional matrix electrode chips and / or multiple two-dimensional matrix electrode chips.

[0021] Furthermore, the step S2 specifically includes:

[0022] Step 1: manufacturing a matrix electrode chip wafer on one side of the two-dimensional optical waveguide glass chip wafer having the waveguide, and manufacturing a ground electrode wafer on the other side of the two-dimensional optical waveguide glass chip wafer;

[0023] Step II: connecting the matrix electrode chip wafer to an external power supply; setting the voltage of each electrode in the matrix electrode chip wafer according to the shape of the three-dimensional optical waveguide to be formed, and obtaining a suitable buried voltage distribution field; starting to power the matrix electrode chip wafer, and the matrix electrode chip wafer performs a waveguide burying process on the two-dimensional structure of the optical waveguide;

[0024] Step III, cooling and removing the glass chip wafer after the waveguide is buried;

[0025] Step IV: Slice and divide the glass chip wafer after the waveguide is buried, and grind and polish it to obtain a three-dimensional optical waveguide glass chip.

[0026] Furthermore, the one-dimensional matrix electrode chip includes an insulating base body A, the top surface of which is recessed downwards and provided with a plurality of parallelly arranged electrode mounting grooves A, each of which is embedded with an electrode block A.

[0027] Furthermore, the two-dimensional matrix electrode chip includes an insulating base body B, the top surface of which is recessed downwards and provided with a plurality of electrode mounting grooves B arranged in an array, each of which has an electrode block B embedded therein.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] The present invention discloses a method for manufacturing a three-dimensional optical waveguide glass chip, comprising forming a two-dimensional optical waveguide structure on the surface of a glass chip wafer through an ion exchange process; and burying the optical waveguide on the treated surface of the glass chip wafer with a matrix electrode chip wafer, thereby controlling the depth of the waveguide, thereby ultimately obtaining a three-dimensional optical waveguide glass chip. The electrodes in the matrix electrode chip wafer can be one-dimensional matrix electrodes and / or two-dimensional matrix electrodes. The present invention utilizes a matrix electrode method to control the electric field, burying the optical waveguide in the glass chip wafer with controllable depth differences, thereby achieving the three-dimensional structure of the glass chip optical waveguide. The present invention's manufacturing method has a wide range of applications. When used to prepare a variety of different waveguide structures, the manufacturing process can be completed by adjusting the voltage setting, eliminating the need to re-manufacture a matrix electrode chip wafer.

[0030] In addition to the above-described objects, features and advantages, the present invention has other objects, features and advantages. The present invention will be further described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying drawings are used to provide a further understanding of the embodiments of the present invention and constitute a part of the specification. Together with the following detailed description, they are used to explain the embodiments of the present invention, but do not constitute a limitation of the embodiments of the present invention. In the accompanying drawings:

[0032] Figure 1 This is a flowchart of a method for manufacturing a three-dimensional optical waveguide glass chip provided in Example 1 of the present invention;

[0033] Figure 2 Schematic diagram of the preparation structure of a three-dimensional optical waveguide glass chip with uniform burial depth distribution provided in Example 1 of the present invention; wherein (a) is a one-dimensional matrix electrode chip; (b) is a three-dimensional optical waveguide glass chip with uniform burial depth distribution;

[0034] Figure 3 Schematic diagram of the preparation structure of a three-dimensional optical waveguide glass chip with different burial depth distributions provided in Example 1 of the present invention; wherein (a) is a two-dimensional matrix electrode chip; (b) is a three-dimensional optical waveguide glass chip with different burial depth distributions;

[0035] Figure 4 Schematic diagram of the structure of the matrix electrode chip wafer in Example 1 of the present invention;

[0036] Figure 5 This is a schematic flow chart of a method for manufacturing a three-dimensional optical waveguide glass chip provided in Example 2 of the present invention;

[0037] Figure 6 Schematic diagram of the structure of a three-dimensional optical waveguide prepared by the method of the present invention;

[0038] Figure 7It is a schematic diagram of the structure of an optical waveguide prepared using existing technology. DETAILED DESCRIPTION

[0039] The present invention will be described in detail below with reference to the various embodiments shown in the accompanying drawings, but it should be noted that these embodiments are not limitations of the present invention, and any equivalent transformations or substitutions in functions, methods, or structures made by ordinary technicians in this field based on these embodiments are all within the scope of protection of the present invention.

[0040] Example 1

[0041] See Figure 1 This embodiment provides a method for manufacturing a three-dimensional optical waveguide glass chip, wherein a plurality of three-dimensional optical waveguides on each glass chip are distributed in an array; the manufacturing method comprises the following steps:

[0042] Step S1: forming a two-dimensional optical waveguide structure on the surface of a glass chip wafer through an ion exchange process; the specific steps are as follows:

[0043] Step S1.1, chip cleaning: First, clean the glass chip wafer using a wet method, and then clean the glass chip wafer with deionized water to remove pollutants, metal ions and other impurities adhering to the surface of the glass wafer; then use hexamethyldisilazane (HMDS) gas to fumigate the glass chip wafer to dry and dehydrate it.

[0044] Step S1.2, sputtering an Al film on the surface of the glass chip wafer, and evenly spin-coating photoresist on the Al film and removing the edges, and then performing a pre-baking process on the glass chip wafer; then designing a photolithography pattern on the surface of the glass chip wafer according to the waveguide shape and exposing it, and then performing a post-baking process on the glass chip wafer; finally, developing, rinsing and hard-film baking on the glass chip wafer.

[0045] Step S1.3: wet-etch the glass chip wafer to dissolve the Al film in the waveguide area, thereby exposing the glass substrate.

[0046] Step S1.4: Perform an ion exchange process on the glass chip wafer, using a mixed molten salt as the ion source for the exchange; first heat the mixed salt until it melts, then place the glass chip wafer in the mixed molten salt to exchange the sodium ions in the exposed glass substrate with the ions in the molten salt. After the exchange is completed, cool and remove the glass chip wafer.

[0047] Step S1.5: Clean the removed glass chip wafer to obtain a two-dimensional optical waveguide glass chip wafer.

[0048] Step S2: Using the matrix electrode chip wafer, the optical waveguide of the two-dimensional optical waveguide glass chip wafer is depth-controlledly buried, and finally a three-dimensional optical waveguide glass chip is obtained. The specific steps are as follows:

[0049] Step S2.1: Align the matrix electrode chip and the two-dimensional optical waveguide glass chip wafer and fix them using a wafer frame.

[0050] Step S2.2, place the two wafers and the wafer rack as a whole into a high-temperature furnace, and connect the matrix electrode chip to an external power supply; after heating to the burying temperature, start to power the matrix electrode chip, and the matrix electrode chip performs waveguide burying processing on the two-dimensional structure of the optical waveguide.

[0051] Step S2.3: Cool and remove the glass chip wafer after the waveguide is buried.

[0052] Step S2.4: scribing the glass chip wafer after the waveguide is buried, and then grinding and polishing the scribing glass chip wafer to finally obtain a three-dimensional optical waveguide glass chip.

[0053] In this embodiment, in order to perform surface ion exchange and waveguide embedding processing on the entire glass chip wafer, it is necessary to manufacture a matrix electrode chip wafer corresponding to the size of the glass chip wafer, and design positioning structures on the matrix electrode chip wafer and the glass chip wafer. As those skilled in the art will understand, the matrix electrode chip wafer only needs to be manufactured before step S2.1. The matrix electrode chip wafer includes multiple one-dimensional matrix electrode chips and / or multiple two-dimensional matrix electrode chips. Specifically, the size, dimensions, and distribution of the matrix electrode chips are determined according to the structure of the three-dimensional optical waveguide glass chip to be manufactured.

[0054] In this embodiment, if it is necessary to make Figure 2 The three-dimensional optical waveguide glass chip with the same buried depth distribution of the optical waveguide array shown in (a) needs to adopt the following Figure 2 The one-dimensional matrix electrode chip 1 shown in (b) performs a waveguide burying process on the optical waveguide. The one-dimensional matrix electrode chip 1 includes an insulating base body A1.1, the top surface of which is recessed downward and provided with a plurality of parallel electrode mounting grooves A, each of which is embedded with an electrode block A1.2. The three-dimensional optical waveguide glass chip 2 with the same buried depth distribution of the optical waveguide array made using the one-dimensional matrix electrode chip 1 has the same depth distribution of the waveguide array 2.2 in its glass substrate 2.1, and the bottom of the glass substrate is the chip negative electrode 2.3. It should be noted that the same depth distribution mentioned in this embodiment means that the buried depth distribution of multiple waveguides in the three-dimensional optical waveguide glass chip 2 is consistent.

[0055] In this embodiment, if it is necessary to make Figure 3The three-dimensional optical waveguide glass chip with different buried depths of the optical waveguide array shown in (a) needs to be used as follows Figure 3 The two-dimensional matrix electrode chip 3 shown in (b) performs waveguide burial processing on the optical waveguide. This two-dimensional matrix electrode chip 3 includes an insulating base body B3.1, the top surface of which is recessed downwardly and provided with a plurality of electrode mounting grooves B arranged in an array. Each electrode mounting groove B is embedded with an electrode block B3.2. Using the two-dimensional matrix electrode chip 3 to bury the waveguides, a three-dimensional optical waveguide glass chip 4 is obtained. The waveguide array 4.2 within the glass substrate 4.1 has different depth distributions, and the bottom of the glass substrate serves as the chip's negative electrode 4.3. It should be noted that the different depth distributions referred to in this embodiment refer to the different burial depth distributions of each adjacent waveguide in the three-dimensional optical waveguide glass chip 4.

[0056] like Figure 4 As shown, to improve manufacturing efficiency, the matrix electrode chip wafer is provided with multiple one-dimensional matrix electrodes 1 and multiple two-dimensional matrix electrodes 3. The insulating base bodies A1.1 of the multiple one-dimensional matrix electrodes 1 and the insulating base bodies B3.1 of the multiple two-dimensional matrix electrodes 3 are integrally arranged, and are formed by mounting grooves provided on the matrix electrode chip wafer. The matrix electrode chip is provided with multiple positioning height limiting structures 5 and multiple electrode bumps 6. Each electrode block in each matrix electrode chip is connected to the electrode bumps 6 via wires. In this structure, the electrode bumps facilitate connection of the matrix electrode chip to an external power source. Corresponding to the aforementioned matrix electrode chip wafer structure, the glass chip wafer is provided with positioning grooves that match the multiple positioning height limiting structures 5. Through the cooperation of the concave and convex positioning structures, the matrix electrode wafer and the glass chip wafer are positioned and height-limited. During the manufacturing process of a 3D optical waveguide glass chip using the present invention, the voltage applied to each electrode block is adjusted based on the specific shape of the desired 3D waveguide to achieve an electric field distribution that matches the waveguide burial requirements. Since each chip typically contains multiple waveguides, a one-dimensional or two-dimensional electrode chip can be used depending on whether the waveguides have a consistent burial depth distribution. If the waveguides have a consistent burial depth distribution, a one-dimensional matrix electrode can be used; if the waveguides have an inconsistent burial depth distribution, a two-dimensional matrix electrode is required.

[0057] Example 2

[0058] like Figure 5As shown, this embodiment provides another method for manufacturing a three-dimensional optical waveguide glass chip. In this method, step S1 is similarly to increasing the refractive index of a designated local area on the surface of a glass chip wafer K through masking and ion exchange, thereby producing an optical waveguide P located on the surface. The mask layer on the wafer surface is then removed using a suitable method such as wet etching or dry etching (depending on the wafer and mask materials). In step S1.4, an ion exchange process is performed on the glass chip wafer using a silver ion molten salt L. The specific steps are the same as those in the above-mentioned embodiment 1 and are not further described here.

[0059] Unlike the above-mentioned embodiment 1, step S2 in this embodiment is to directly manufacture the matrix electrode chip wafer M and the ground electrode wafer N on both sides of the two-dimensional optical waveguide glass chip wafer. Preferably, the matrix electrode is manufactured on one side of the surface waveguide and the ground electrode is manufactured on the other side. The specific steps are:

[0060] Step I: manufacturing a matrix electrode chip wafer M on one side of a two-dimensional optical waveguide glass chip wafer having a waveguide, and manufacturing a ground electrode wafer N on the other side of the two-dimensional optical waveguide glass chip wafer;

[0061] Step II: Connect the matrix electrode chip wafer to an external power supply; set the voltage of each electrode in the matrix electrode chip wafer according to the shape of the three-dimensional optical waveguide I to be formed, and obtain a suitable buried voltage distribution field; start to power the matrix electrode chip wafer, and the matrix electrode chip wafer performs waveguide burying processing on the two-dimensional structure of the optical waveguide;

[0062] Step III, cooling and removing the glass chip wafer after the waveguide is buried;

[0063] Step IV: scribing the glass chip wafer after the waveguide is buried, and then grinding and polishing the scribing glass chip wafer to finally obtain a qualified three-dimensional optical waveguide glass chip.

[0064] The structure of the matrix electrode chip wafer in this embodiment is the same as that in the above-mentioned embodiment 1, and will not be described again here.

[0065] In summary, the present invention positions and bonds the matrix electrode chip wafer and the glass chip wafer, or distributes the matrix electrode chip wafer and the ground electrode chip wafer on both sides of the glass chip wafer. By adjusting the voltage of each electrode block on the matrix electrode, the electric field strength of the coated glass chip wafer is adjusted, thereby controlling the three-dimensional manufacturing of the entire waveguide. The present invention is capable of achieving a three-dimensional distribution of the entire optical waveguide. The optical waveguide as a whole is a three-dimensional structure, that is, the XYZ coordinates of the waveguide's central axis are all variable, such as Figure 6 shown. Figure 6 In the figure, the coordinates of the central axis of the input end of the three-dimensional optical waveguide are (1, 0, 8), and the coordinates of the central axis of the input end are (15, 40, 1).

[0066] The foregoing description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention are intended to be within the scope of protection of the present invention.

Claims

1. A method for manufacturing a three-dimensional optical waveguide glass chip, characterized in that: The following steps are involved: Step S1: forming a two-dimensional optical waveguide structure on the surface of a glass chip wafer through an ion exchange process; specifically comprising: Step S1.1, first cleaning the glass chip wafer using a wet method, then cleaning the glass chip wafer using deionized water, and then drying the glass chip wafer using hexamethyldisilazane gas; Step S1.2, first sputtering an Al film on the surface of the glass chip wafer, and evenly spin-coating a photoresist on the Al film and removing the edges, and then performing a pre-baking process on the glass chip wafer; then designing a photolithography pattern on the glass chip wafer according to the waveguide shape and performing exposure, and then performing a post-baking process on the glass chip wafer; finally, developing, rinsing, and hardening the film on the glass chip wafer; Step S1.3, wet-etching the glass chip wafer to dissolve the Al film in the waveguide area, thereby exposing the glass substrate; Step S1.4, performing an ion exchange process on the glass chip wafer, cooling and removing the glass chip wafer after the exchange is completed; Step S1.5: Cleaning the removed glass chip wafer to obtain a two-dimensional optical waveguide glass chip wafer; Step S2, using a matrix electrode chip wafer to bury the optical waveguide of the glass chip wafer processed in step S1 with a controllable depth, and finally obtaining a three-dimensional optical waveguide glass chip; specifically comprising: Step S2.1, aligning and mounting the matrix electrode chip wafer and the two-dimensional optical waveguide glass chip wafer together, and fixing them using a wafer frame; Step S2.2, placing the two wafers and the wafer rack as a whole into a high-temperature furnace, and connecting the matrix electrode chip wafer to an external power supply; after heating to the burying temperature, the matrix electrode chip wafer begins to be powered on, and the matrix electrode chip wafer performs a waveguide burying process on the two-dimensional structure of the optical waveguide; Step S2.3, cooling and removing the glass chip wafer after the waveguide is buried; Step S2.4, dicing the glass chip wafer after the waveguide is buried, and polishing it to obtain a three-dimensional optical waveguide glass chip; Before step S2.1, the method also includes: designing and preparing the matrix electrode chip wafer according to the structure of the three-dimensional optical waveguide glass chip to be manufactured; the matrix electrode chip wafer includes multiple one-dimensional matrix electrode chips and / or multiple two-dimensional matrix electrode chips.

2. The method for manufacturing a three-dimensional optical waveguide glass chip according to claim 1, wherein: In step S1.4, a mixed molten salt is used as the ion source for exchange; the specific ion exchange process is: first, the mixed salt is heated until it melts, and then the glass chip wafer after wet etching is placed in the mixed molten salt, so that the sodium ions in the exposed glass substrate are exchanged with the ions in the mixed molten salt.

3. The method for manufacturing a three-dimensional optical waveguide glass chip according to claim 1, wherein: The one-dimensional matrix electrode chip comprises an insulating base body A, the top surface of which is recessed downwards and provided with a plurality of parallelly arranged electrode mounting grooves A, each of which is embedded with an electrode block A.

4. The method for manufacturing a three-dimensional optical waveguide glass chip according to claim 1, wherein: The two-dimensional matrix electrode chip includes an insulating base body B, the top surface of which is recessed downwards and provided with a plurality of electrode mounting grooves B arranged in an array, each of which is embedded with an electrode block B.

5. A method for manufacturing a three-dimensional optical waveguide glass chip, characterized in that: The following steps are involved: Step S1: forming a two-dimensional optical waveguide structure on the surface of a glass chip wafer through an ion exchange process; Step S1 specifically includes: Step S1.1, first cleaning the glass chip wafer using a wet method, then cleaning the glass chip wafer using deionized water, and then drying the glass chip wafer using hexamethyldisilazane gas; Step S1.2, first sputtering an Al film on the surface of the glass chip wafer, and evenly spin-coating a photoresist on the Al film and removing the edges, and then performing a pre-baking process on the glass chip wafer; then designing a photolithography pattern on the glass chip wafer according to the waveguide shape and performing exposure, and then performing a post-baking process on the glass chip wafer; finally, developing, rinsing, and hardening the film on the glass chip wafer; Step S1.3, wet-etching the glass chip wafer to dissolve the Al film in the waveguide area, thereby exposing the glass substrate; Step S1.4, performing an ion exchange process on the glass chip wafer, cooling and removing the glass chip wafer after the exchange is completed; Step S1.5: Cleaning the removed glass chip wafer to obtain a two-dimensional optical waveguide glass chip wafer; Step S2: using a matrix electrode chip wafer to bury the optical waveguide of the glass chip wafer processed in step S1 with a controllable depth, thereby finally obtaining a three-dimensional optical waveguide glass chip; step S2 specifically includes: Step 1: manufacturing a matrix electrode chip wafer on one side of the two-dimensional optical waveguide glass chip wafer having the waveguide, and manufacturing a ground electrode wafer on the other side of the two-dimensional optical waveguide glass chip wafer; Step II: connecting the matrix electrode chip wafer to an external power supply; setting the voltage of each electrode in the matrix electrode chip wafer according to the shape of the three-dimensional optical waveguide to be formed, and obtaining a suitable buried voltage distribution field; starting to power the matrix electrode chip wafer, and the matrix electrode chip wafer performs a waveguide burying process on the two-dimensional structure of the optical waveguide; Step III, cooling and removing the glass chip wafer after the waveguide is buried; Step IV, dicing and dividing the glass chip wafer after the waveguide is buried, and polishing it to obtain a three-dimensional optical waveguide glass chip; Wherein, the matrix electrode chip wafer includes a plurality of one-dimensional matrix electrode chips and / or a plurality of two-dimensional matrix electrode chips.

6. The method for manufacturing a three-dimensional optical waveguide glass chip according to claim 5, wherein: In step S1.4, a mixed molten salt is used as the ion source for exchange; the specific ion exchange process is: first, the mixed salt is heated until it melts, and then the glass chip wafer after wet etching is placed in the mixed molten salt, so that the sodium ions in the exposed glass substrate are exchanged with the ions in the mixed molten salt.

7. The method for manufacturing a three-dimensional optical waveguide glass chip according to claim 5, wherein: The one-dimensional matrix electrode chip comprises an insulating base body A, the top surface of which is recessed downwards and provided with a plurality of parallelly arranged electrode mounting grooves A, each of which is embedded with an electrode block A.

8. The method for manufacturing a three-dimensional optical waveguide glass chip according to claim 5, wherein: The two-dimensional matrix electrode chip includes an insulating base body B, the top surface of which is recessed downwards and provided with a plurality of electrode mounting grooves B arranged in an array, each of which is embedded with an electrode block B.

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