Top incidence lead selenide quantum dot detector with zinc telluride interface layer

Abstract

The invention discloses a top-incidence PbSe quantum dot detector with a zinc telluride interface layer, and particularly relates to application of a ZnTe material as the interface layer in the top-incidence PbSe quantum dot detector. The top incidence lead selenide quantum dot detector comprises a glass substrate, a transparent bottom electrode, a ZnO electron transport layer, a PbSe-halide photosensitive layer, a PbS-EDT hole transport layer, a ZnTe interface layer and a transparent top electrode which are sequentially stacked from bottom to top. The ZnTe interface layer not only inhibits the interface damage to the PbS-EDT hole transport layer during the preparation of the top electrode and effectively improves the detection performance of the detector, but also supports the preparation of the top incident detector.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic detection technology, and particularly to a top-incident lead selenide (PbSe) quantum dot detector with a zinc telluride (ZnTe) interface layer. Background Art

[0002] The top-incident PbSe quantum dot detector has the characteristics of being directly integrable with a silicon-based readout circuit, low preparation cost, and easy implementation of a large-area array, and is a hot spot and frontier in the current research of infrared detection technology. The PbSe quantum dot detector consists of a bottom electrode, an electron transport layer, a PbSe quantum dot photosensitive layer, a hole transport layer, and a top electrode. However, the traditional hole transport layer, PbS quantum dots (PbS-EDT) wrapped by 1,2-ethanedithiol (EDT), has poor chemical stability, and the metal top electrode can only be deposited by a low-damage thermal evaporation process to prepare a bottom-incident detector structure.

[0003] This device structure is widely used in single-pixel detectors, but it is not compatible with the readout circuit and is difficult to be used in the preparation of high-performance imaging chips, so there are certain application limitations.

[0004] Therefore, it is necessary to provide a top-incident lead selenide quantum dot detector with a zinc telluride interface layer to solve the above technical problems. Summary of the Invention

[0005] The present invention overcomes the deficiencies of the prior art and provides a top-incident lead selenide quantum dot detector with a zinc telluride interface layer.

[0006] To achieve the above object, the technical solution adopted by the present invention is: a top-incident lead selenide quantum dot detector with a zinc telluride interface layer, including a glass substrate, a transparent bottom electrode, a zinc oxide (ZnO) electron transport layer, a PbSe-halide photosensitive layer, a PbS-EDT hole transport layer, a ZnTe interface layer, and a transparent top electrode, which are sequentially stacked from bottom to top.

[0007] In a preferred embodiment of the present invention, the transparent top electrode is indium tin oxide (ITO).

[0008] In a preferred embodiment of the present invention, the PbSe-halide photosensitive layer is PbSe quantum dots wrapped by halogen ligands.

[0009] In a preferred embodiment of the present invention, the thickness of the ZnO electron transport layer is 100 - 300 nm, the thickness of the PbSe-halide photosensitive layer is 200 - 500 nm, the thickness of the PbS-EDT hole transport layer is 20 - 100 nm, the thickness of the ZnTe interface layer is 10 - 60 nm, and the thickness of the transparent top electrode ITO layer is 50 - 300 nm.

[0010] In a preferred embodiment of the present invention, the thickness of the ZnO electron transport layer is 150 - 200 nm, the thickness of the PbSe-halide photosensitive layer is 300 - 400 nm, the thickness of the PbS-EDT hole transport layer is 30 - 60 nm, the thickness of the ZnTe interface layer is 20 - 40 nm, and the thickness of the transparent top electrode ITO layer is 100 - 200 nm.

[0011] A method for preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer, preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer as described above, comprising the following steps:

[0012] S1. Pretreat the glass substrate, which is a glass substrate with an ITO transparent electrode;

[0013] S2. Prepare a ZnO electron transport layer on the glass substrate by magnetron sputtering;

[0014] S3. Prepare a PbSe-halide photosensitive layer on the ZnO electron transport layer by spin coating;

[0015] S4. Prepare a PbS-EDT hole transport layer on the PbSe-halide photosensitive layer by spin coating;

[0016] S5. Prepare a ZnTe interface layer on the PbS-EDT hole transport layer by thermal evaporation;

[0017] S6. Prepare a transparent top electrode on the ZnTe interface layer by magnetron sputtering to obtain a top-incident PbSe quantum dot detector.

[0018] In a preferred embodiment of the present invention, the pretreatment is to clean the glass substrate successively with deionized water and ethanol, and then dry it with an air gun.

[0019] In a preferred embodiment of the present invention, in S2, the sputtering vacuum degree is 0.5 - 4 Pa, and the O 2 / Ar flow ratio is 0.001 - 0.015.

[0020] In a preferred embodiment of the present invention, the preparation of the PbSe-halide photosensitive layer includes:

[0021] S31. Prepare a ligand solution of DMF containing halogen elements; wherein, the halogen element is lead iodide, lead bromide or ammonium iodide;

[0022] S32. Mix a PbSe-OA quantum dot n-octane solution with a first exciton absorption peak of 980 - 1700 nm with the ligand solution for ligand exchange;

[0023] S33. After ligand exchange, the quantum dots are subjected to vacuum drying treatment;

[0024] S34. Disperse the PbSe-halide quantum dots with a mixed solution containing n-butylamine (BTA) and N,N-dimethylformamide (DMF) at a concentration of 200 - 500 mg / mL;

[0025] S35. Spin-coat on the ZnO electron transport layer at a speed of 2500 rpm for 40 s, and then anneal it at 80 - 100 °C for 8 - 12 min to obtain the PbSe-halide photosensitive layer.

[0026] In a preferred embodiment of the present invention, in the step S4, using a solid-phase ligand exchange process, a solution of PbS-OA quantum dots with a first exciton absorption peak of 800 - 950 nm in n-octane, the concentration of the n-octane solution is 20 - 100 mg / mL, spin-coat it on the PbSe-halide photosensitive layer at a speed of 2500 rpm for 15 - 25 s, and then place it in the acetonitrile solution of EDT and the acetonitrile solution for 25 - 35 s respectively, and spin-coat 2 layers in total to prepare the PbS-EDT hole transport layer.

[0027] In a preferred embodiment of the present invention, in the step S5, when preparing the ZnTe interface layer by thermal evaporation method, the oxygen flow rate is controlled to be 0 - 5 sccm.

[0028] In a preferred embodiment of the present invention, in the step S6, the vacuum degree of sputtering is 0.2 - 1 Pa, and the sputtering O 2 / Ar flow ratio is 0 - 0.017.

[0029] The present invention solves the defects existing in the background technology, and the present invention has the following beneficial effects:

[0030] (1) The present invention provides a top-incident lead selenide quantum dot detector with a zinc telluride interface layer. In this detector structure, an infrared highly transparent ITO electrode can be directly deposited on ZnTe by high-energy processes such as magnetron sputtering to prepare a top-incident detector. This top-incident detector structure effectively improves the light absorption of the detector and enhances the external quantum efficiency of the detector. More importantly, the top-incident detector structure has no requirements for the substrate and can be fully compatible with the readout circuit to achieve the integrated integration of the chip.

[0031] (2) In the present invention, the inorganic material ZnTe is used as the interface layer between the ITO transparent top electrode and the quantum dot layer, which not only has the ability to prevent the interface damage to the PbS-EDT hole transport layer during the preparation process of the transparent top electrode, but also has the ability of the hole transport layer. Based on this, the introduction of the ZnTe interface layer in the present invention can effectively suppress interface defects and improve the signal-to-noise ratio of the detector.

[0032] (3) In the present invention, the ZnTe thin film prepared by the thermal evaporation vacuum coating process has very low damage to the quantum dot material, and the film has good uniformity and compactness. In addition, as a common inorganic semiconductor material, ZnTe has excellent chemical stability. Therefore, the ZnTe interface layer can prevent the PbSe quantum dot layer from contacting with water and oxygen, thereby improving the stability of the detector. Description of the Drawings

[0033] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only some embodiments recorded in the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings;

[0034] Figure 1 is a schematic diagram of the top-incident PbSe quantum dot detector structure of the preferred embodiment of the present invention;

[0035] Figure 2 is the X-ray diffraction pattern of the ZnTe interface layer of the present invention;

[0036] Figure 3 is the scanning electron microscope image of the ZnTe interface layer of the present invention;

[0037] Figure 4 is the atomic force microscope image of the ZnTe interface layer of the present invention;

[0038] Figure 5 is the transmission electron microscope image of the ZnTe interface layer of the present invention;

[0039] Figure 6 is the transmission spectrum of the ZnTe interface layer of the present invention;

[0040] Figure 7 is the Tauc method fitting band gap diagram of the ZnTe interface layer of the present invention;

[0041] Figure 8 is the ultraviolet photoelectron spectroscopy of the PbS-EDT hole transport layer and the ZnTe interface layer of the present invention;

[0042] Figure 9 is the current-voltage curve of the PbSe quantum dot detector with or without ZnTe as the interface layer of the present invention;

[0043] Figure 10 is the current-voltage characteristic curve of the PbSe quantum dot detector based on the thinner ZnTe of the present invention.

[0044] In the figure: 1. Glass substrate; 2. Transparent bottom electrode; 3. ZnO electron transport layer; 4. PbSe-halide photosensitive layer; 5. PbS-EDT hole transport layer; 6. ZnTe interface layer; 7. Transparent top electrode. Detailed implementation manners

[0045] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0046] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention may be implemented in other ways different from those described herein. Therefore, the protection scope of the present invention is not limited by the specific embodiments disclosed below.

[0047] As Figure 1 shown, the present invention provides a top-incident lead selenide quantum dot detector with a zinc telluride interface layer, including a glass substrate 1, a transparent bottom electrode 2, a ZnO electron transport layer 3, a PbSe-halide photosensitive layer 4, a PbS-EDT hole transport layer 5, a ZnTe interface layer 6, and a transparent top electrode 7 that are sequentially stacked from bottom to top; the PbSe-halide photosensitive layer 4 is PbSe quantum dots wrapped by halogen ligands; the materials of the transparent bottom electrode 2 and the transparent top electrode 7 are both ITO.

[0048] The following are the thicknesses of each layer of the detector structure.

[0049] The glass substrate 1 is commercially purchased from Liaoning Youxuan, with a thickness of 1.1 mm.

[0050] The transparent bottom electrode 2 (ITO layer) is commercially purchased from Liaoning Youxuan, with a thickness of 180 nm and a sheet resistance of 8-10 Ω.

[0051] The thickness of the ZnO electron transport layer 3 is 100-300 nm, preferably 150-200 nm.

[0052] The thickness of the PbSe-halide photosensitive layer 4 is 200-500 nm, preferably 300-400 nm.

[0053] The thickness of the PbS-EDT hole transport layer 5 is 20-100 nm, preferably 30-60 nm.

[0054] The thickness of the ZnTe interface layer 6 is 10-60 nm, preferably 20-40 nm.

[0055] The thickness of the transparent top electrode 7 (ITO layer) is 50 to 300 nm, preferably 100 to 200 nm.

[0056] The present invention also provides a method for preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer, comprising the following steps:

[0057] S1. Pretreat the glass substrate, which is a glass substrate with an ITO transparent electrode; the pretreatment is to clean the glass substrate successively with deionized water and ethanol, and then dry it with an air gun.

[0058] S2. Prepare a ZnO electron transport layer on the glass substrate by magnetron sputtering. The sputtering vacuum degree is 0.5 to 4 Pa, preferably 3 Pa, and the O 2 / Ar flow ratio is 0.001 to 0.015, preferably 0.009.

[0059] S3. Prepare a PbSe-halide photosensitive layer on the ZnO electron transport layer by spin coating; the preparation of the PbSe-halide photosensitive layer includes:

[0060] S31. Prepare a DMF ligand solution containing a halogen element, where the halogen element is lead iodide, lead bromide or ammonium iodide.

[0061] S32. Mix a PbSe-OA quantum dot n-octane solution (10 mg / mL) with a first exciton absorption peak of 980 to 1700 nm and the ligand solution for ligand exchange.

[0062] S33. After ligand exchange, perform vacuum drying treatment on the quantum dots.

[0063] S34. Disperse PbSe-halide quantum dots with a mixed solution containing BTA and DMF at a concentration of 200 to 500 mg / mL, preferably 350 mg / mL.

[0064] S35. Spin coat on the ZnO electron transport layer at a speed of 2500 rpm for 40 s, and then anneal it at 80 to 100 °C for 8 to 12 min to obtain a PbSe-halide photosensitive layer.

[0065] S4. Prepare a PbS-EDT hole transport layer on the PbSe-halide photosensitive layer by spin coating, specifically as follows: Using a solid-phase ligand exchange process, spin coat a n-octane solution of PbS-OA quantum dots with a first exciton absorption peak of 800 - 950 nm at a concentration of 20 - 100 mg / mL on the PbSe-halide photosensitive layer at a speed of 2500 rpm for 15 - 25 s, then place it in an acetonitrile solution of EDT (volume ratio 0.02%) and an acetonitrile solution for 25 - 35 s respectively, and spin coat 2 layers in total to prepare the PbS-EDT hole transport layer.

[0066] S5. Prepare a ZnTe interface layer on the PbS-EDT hole transport layer by thermal evaporation, and control the oxygen flow rate to be 0 - 5 sccm, preferably 2 sccm.

[0067] S6. Prepare a transparent top electrode on the ZnTe interface layer by magnetron sputtering. The vacuum degree of sputtering is 0.2 - 1 Pa, preferably 0.5 Pa, and the O 2 / Ar flow ratio is 0 - 0.017, preferably 0.003, to obtain a top-incident PbSe quantum dot detector.

[0068] Through the above steps, the present invention introduces an inorganic material ZnTe between the ITO transparent top electrode and the PbS-EDT hole transport layer as an interface blocking layer. The infrared highly transparent ITO transparent top electrode can be directly deposited on ZnTe by high-energy processes such as magnetron sputtering to prepare a top-incident detector. This method effectively avoids the interface damage between the ITO transparent top electrode and the PbS-EDT hole transport layer, reduces the generation of interface defect states, inhibits the recombination of carriers, and improves the comprehensive performance of the detector.

[0069] Example 1

[0070] 1) Pretreat the glass substrate as follows: Wash the glass substrate with ITO transparent electrode successively with deionized water and ethanol, and then dry it with an air gun.

[0071] 2) On the glass substrate with ITO, prepare a ZnO electron transport layer by magnetron sputtering. The specific process parameters are as follows: The sputtering vacuum degree is 3 Pa, the O 2 / Ar flow ratio is 0.009, the sputtering power is 200 W, and the sputtering time is 25 min to obtain a 180-nm-thick ZnO electron transport layer.

[0072] 3) Subsequently, a PbSe-halide photosensitive layer was prepared thereon by spin coating. The specific steps are as follows: First, prepare a DMF solution of lead iodide (0.3 M) and lead bromide (0.03 M) as the ligand solution. Then, mix the n-octane solution of PbSe-OA quantum dots with a first exciton absorption peak of 1550 nm (10 mg / mL) and the ligand solution in a volume ratio of 1:1. Shake the mixed solution until the quantum dots are completely transferred to the DMF phase. Then remove the upper n-octane solution. Then wash the DMF solution twice with n-octane. After the exchange process, separate the quantum dots from the solvent by centrifugation. Subsequently, perform vacuum drying treatment on the quantum dots. Disperse the PbSe-halide quantum dots with a BTA:DMF (volume ratio 4:1) mixed solution at a concentration of 350 mg / mL. Spin coat it on the substrate at a speed of 2500 rpm for 40 s. Then, anneal it at 90 °C for 10 min to obtain a PbSe-halide photosensitive layer with a thickness of 350 nm.

[0073] 4) Subsequently, a PbS-EDT hole transport layer was prepared thereon by spin coating. The specific steps are as follows: Spin coat the n-octane solution of PbS-OA quantum dots with a first exciton absorption peak of 880 nm at a concentration of 40 mg / mL at a speed of 2500 rpm for 20 s, and then place it in an acetonitrile solution of EDT (volume ratio 0.02%) and an acetonitrile solution for 30 s respectively, and spin coat 2 layers in total to obtain a PbS-EDT hole transport layer with a thickness of 40 nm.

[0074] 5) Subsequently, a ZnTe interface layer was prepared thereon by thermal evaporation. The specific process parameters are as follows: The oxygen flow rate is 2 sccm, and the evaporation rate is The evaporation time is 10 min 25 s to obtain a ZnTe interface layer with a thickness of 25 nm.

[0075] 6) On the ZnTe interface layer, an ITO transparent top electrode was prepared by magnetron sputtering. The specific process parameters are as follows: The sputtering vacuum degree is 0.5 Pa, the sputtering O 2 / Ar flow ratio is 0.003, the sputtering power is 100 W, and the sputtering time is 15 min to obtain an ITO transparent top electrode with a thickness of 180 nm.

[0076] Finally, a top-incident PbSe quantum dot detector with a ZnTe interface layer thickness of 25 nm according to the present invention was obtained; the detector structure sequentially includes from bottom to top: a glass substrate 1, a transparent bottom electrode 2, a ZnO electron transport layer 3, a PbSe-halide photosensitive layer 4, a PbS-EDT hole transport layer 5, a ZnTe interface layer 6, and a transparent top electrode 7.

[0077] The following tests were performed on the top-incident PbSe quantum dot detector prepared in the above Example 1.

[0078] As Figure 2 shown, the ZnTe interface layer prepared by the method of the present invention is in a zinc blende structure.

[0079] As Figure 3 shown, the ZnTe interface layer prepared by the method of the present invention has no obvious cracks and has good film quality.

[0080] As Figure 4 shown, the surface of the ZnTe interface layer prepared by the method of the present invention is flat.

[0081] As Figure 5 shown, the lattice spacing of the ZnTe interface layer prepared by the method of the present invention is 0.35 nm, which is in good agreement with the (111) plane of the cubic ZnTe phase.

[0082] As Figure 6 shown, the ZnTe interface layer has a high infrared transmittance and hardly affects the absorption of photons by the photosensitive layer.

[0083] As Figure 7 shown, the band gap of the ZnTe interface layer fitted by the Tauc method is 2.3 eV.

[0084] As Figure 8 shown, the photoelectron energy spectrum of the PbS-EDT hole transport layer and the ZnTe interface layer. It can be seen from the figure that the conduction band and valence band positions of PbS-EDT are about -3.48 eV and -4.84 eV respectively, and the conduction band and valence band positions of the ZnTe interface layer are about -2.50 eV and -4.80 eV respectively. This result shows that the valence band energy level of ZnTe almost coincides with the valence band energy level of PbS-EDT, and the band offset between ZnTe and PbS-EDT can be ignored. Therefore, ZnTe does not hinder the hole transport. Compared with PbS-EDT quantum dots, ZnTe material has a higher conduction band, which is more conducive to blocking the transport of electrons to the hole collection electrode and reducing the non-radiative recombination of carriers. Therefore, ZnTe is energy level matched with PbS-EDT quantum dots and is suitable as the interface layer between the hole transport layer and the electrode of the PbSe quantum dot detector.

[0085] As Figure 9 shown, the current-voltage characteristic curve of the PbSe quantum dot detector. It can be seen from the figure that compared with the PbSe quantum dot detector without the ZnTe interface layer, the PbSe quantum dot detector with the ZnTe interface layer has a lower dark current.

[0086] Example 2

[0087] 1) Pretreat the glass substrate as follows: successively clean the glass substrate with ITO transparent electrode with deionized water and ethanol, and then dry it with an air gun.

[0088] 2) On the glass substrate with ITO, the ZnO electron transport layer was prepared by magnetron sputtering. The specific process parameters are as follows: the sputtering vacuum degree is 3 Pa, the sputtering O 2 / Ar flow ratio is 0.009, the sputtering power is 200 W, the sputtering time is 25 min, and a ZnO electron transport layer with a thickness of 180 nm was obtained.

[0089] 3) Then, the PbSe-halide photosensitive layer was prepared by spin coating on it. The specific steps are as follows: First, a DMF solution of lead iodide (0.3 M) and lead bromide (0.03 M) was prepared as the ligand solution. Then, the PbSe-OA quantum dot n-octane solution (10 mg / mL) with the first exciton absorption peak at 1550 nm was mixed with the ligand solution at a volume ratio of 1:1. The mixed solution was shaken until the quantum dots were completely transferred to the DMF phase. Then, the upper n-octane solution was removed. Then, the DMF solution was washed twice with n-octane. After the exchange process, the quantum dots were separated from the solvent by centrifugation. Subsequently, the quantum dots were vacuum dried. The PbSe-halide quantum dots were dispersed with a BTA:DMF (volume ratio 4:1) mixed solution at a concentration of 350 mg / mL. It was spin-coated on the substrate at a speed of 2500 rpm for 40 s. Then, it was annealed at 90 °C for 10 min to obtain a PbSe-halide photosensitive layer with a thickness of 350 nm.

[0090] 4) Then, the PbS-EDT hole transport layer was prepared by spin coating on it. The specific steps are as follows: The n-octane solution of PbS-OA quantum dots with the first exciton absorption peak at 880 nm and a concentration of 40 mg / mL was spin-coated at a speed of 2500 rpm for 20 s, and then placed in an acetonitrile solution of EDT (volume ratio 0.02%) and an acetonitrile solution for 30 s respectively, and a total of 2 layers were spin-coated to obtain a PbS-EDT hole transport layer with a thickness of 40 nm.

[0091] 5) Then, the ZnTe interface layer was prepared by thermal evaporation on it. The specific process parameters are as follows: the oxygen flow rate is 2 sccm, the evaporation speed is the evaporation time is 2 min 30 s, and a ZnTe interface layer with a thickness of 6 nm was obtained.

[0092] 6) On the ZnTe interface layer, the ITO transparent top electrode was prepared by magnetron sputtering. The specific process parameters are as follows: the sputtering vacuum degree is 0.5 Pa, the sputtering O 2 / Ar flow ratio is 0.003, the sputtering power is 100 W, the sputtering time is 15 min, and an ITO transparent top electrode with a thickness of 180 nm was obtained.

[0093] Finally, a top-incident PbSe quantum dot detector with a relatively thin (6 nm) ZnTe interface layer of the present invention is obtained; the detector structure sequentially includes from bottom to top: a glass substrate 1, a transparent bottom electrode 2, a ZnO electron transport layer 3, a PbSe-halide photosensitive layer 4, a PbS-EDT hole transport layer 5, a ZnTe interface layer 6, and a transparent top electrode 7.

[0094] The current-voltage test is performed on the top-incident PbSe quantum dot detector prepared in the above Embodiment 2.

[0095] As Figure 10 shown, the current-voltage characteristic curve of the PbSe quantum dot detector based on the 6-nm-thick ZnTe interface layer. It can be seen from the figure that compared with the PbSe quantum dot detector without the introduction of the ZnTe interface layer, the PbSe quantum dot detector with the 6-nm-thick ZnTe interface layer also has a lower dark current, indicating that the thin ZnTe also has an obvious effect of suppressing the dark current.

[0096] Based on the inspiration of the ideal embodiments of the present invention, through the above description, relevant personnel can completely make various changes and modifications without departing from the technical idea of the present invention. The technical scope of the present invention is not limited to the content in the specification, and the technical scope must be determined according to the scope of the claims.

Claims

1. A top-incident lead selenide quantum dot detector with a zinc telluride interface layer, characterized in that The invention comprises a glass substrate, a transparent bottom electrode, a ZnO electron transport layer, a PbSe-halide photosensitive layer, a PbS-EDT hole transport layer, a ZnTe interface layer and a transparent top electrode which are stacked in sequence from bottom to top.

2. A top-incident lead selenide quantum dot detector with a zinc telluride interface layer according to claim 1, characterized in that: The material of the transparent top electrode is ITO.

3. The top-incident lead selenide quantum dot detector with a zinc telluride interface layer according to claim 1, characterized in that: The PbSe-halide photosensitive layer is PbSe quantum dots wrapped by halogen ligands.

4. The top-incident lead selenide quantum dot detector with a zinc telluride interface layer according to claim 1, characterized in that: The thickness of the ZnO electron transport layer is 100-300nm, the thickness of the PbSe-halide photosensitive layer is 200-500nm, the thickness of the PbS-EDT hole transport layer is 20-100nm, the thickness of the ZnTe interface layer is 10-60nm, and the thickness of the transparent top electrode is 50-300nm.

5. A method for preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer, preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer as claimed in any one of claims 1 to 4, characterized in that: The following steps are involved: S1, pre-treating a glass substrate, where the glass substrate is a glass substrate with an ITO transparent electrode; S2, preparing a ZnO electron transport layer on a glass substrate by magnetron sputtering; S3, preparing a PbSe-halide photosensitive layer on the ZnO electron transport layer by spin coating; S4, preparing a PbS-EDT hole transport layer on the PbSe-halide photosensitive layer by spin coating; S5, preparing a ZnTe interface layer on the PbS-EDT hole transport layer by thermal evaporation; S6. A transparent top electrode is prepared on the ZnTe interface layer by magnetron sputtering to obtain a top-incident PbSe quantum dot detector.

6. The method for preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer according to claim 5, characterized in that: In the S2, the sputtering vacuum degree is 0.5-4 Pa, and the sputtering O2 / Ar flow ratio is 0.001-0.

015.

7. The method for preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer according to claim 5, characterized in that: The preparation of the PbSe-halide photosensitive layer comprises: S31, preparing a ligand solution of N,N-dimethylformamide (DMF) containing a halogen element; wherein the halogen element is lead iodide, lead bromide or ammonium iodide; S32, mixing a PbSe-OA quantum dot n-octane solution having a first exciton absorption peak of 980 to 1700 nm with a ligand solution to perform ligand exchange; S33, after ligand exchange, the quantum dots are subjected to vacuum drying treatment; S34, dispersing PbSe-halide quantum dots with a mixed solution containing mono-n-butylamine (BTA) and DMF at a concentration of 200 to 500 mg / mL; S35. After spin coating the ZnO electron transport layer at a speed of 2500 rpm for 40 seconds, anneal it at 80-100° C. for 8-12 minutes to obtain a PbSe-halide photosensitive layer.

8. The method for preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer according to claim 5, characterized in that: In S4, a solid phase ligand exchange process is used to spin-coat an n-octane solution of PbS-OA quantum dots with a first exciton absorption peak of 800 to 950 nm on the PbSe-halide photosensitive layer at a speed of 2500 rpm for 15 to 25 seconds, and then the solution is placed in an acetonitrile solution of EDT and an acetonitrile solution for 25 to 35 seconds, and two layers are spin-coated to prepare a PbS-EDT hole transport layer.

9. The method for preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer according to claim 5, characterized in that: In S5, when the ZnTe interface layer is prepared by thermal evaporation, the oxygen flow rate is controlled to be 0-5 sccm.

10. The method for preparing a top-incident lead selenide quantum dot detector with a zinc telluride interface layer according to claim 5, characterized in that: In the above S6, the vacuum degree of sputtering is 0.2-1 Pa, and the O2 / Ar flow ratio of sputtering is 0-0.017.

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