Fluid discharge device and semiconductor process equipment

Abstract

The invention discloses a fluid discharge device and semiconductor process equipment, and relates to the technical field of semiconductor preparation, and the disclosed fluid discharge device comprises a box body, a first separation part and a second separation part; the box body is provided with a first fluid inlet, a liquid outlet and an exhaust port, and the first fluid inlet is used for being communicated with a fluid discharge port of a semiconductor process chamber; the first partition part is arranged at the bottom of the box body and divides the box body into a main body area and a liquid storage area, the upper edge of the first partition part and the top wall of the box body are arranged at an interval, the first fluid inlet is communicated with the liquid storage area, and the liquid outlet and the exhaust port are both communicated with the main body area; the second separation part is connected with the inner wall of the box body, at least part of the second separation part extends into the liquid storage area, the lower edge of the second separation part and the bottom wall of the box body are arranged in a spaced mode, and the upper edge of the first separation part is higher than the lower edge of the second separation part in the vertical direction.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a fluid discharge device and semiconductor process equipment. Background Art

[0002] Semiconductor silicon wafers are the main raw materials for preparing chips, solar cells and other components, and are widely used in communications, power generation, lighting, medical and other fields. During the processing, semiconductor silicon wafers need to be cleaned and dried in the process chamber, which will inevitably produce waste gas and waste liquid. In addition, in order to improve production efficiency, multiple process chambers are often set up to carry out processes at the same time. The waste liquid and waste gas generated in different process chambers will be collected through the plant drainage pipeline and the plant exhaust pipeline, and uniformly treated and discharged. However, when the exhaust device in the plant exhaust pipeline fails, the waste gas discharged from multiple process chambers will accumulate in the plant exhaust pipeline, and the waste gas will easily backflow into the process chamber, causing pollution to the process chamber and the semiconductor silicon wafers in the process chamber. Summary of the invention

[0003] The present application discloses a fluid discharge device and a semiconductor process equipment to solve the problem in the related art that waste gas is backflowed into a process chamber, causing contamination to the process chamber and the semiconductor silicon wafer in the process chamber.

[0004] In order to solve the above technical problems, this application is implemented as follows: In a first aspect, an embodiment of the present application discloses a fluid discharge device, which is applied to a semiconductor process chamber, and the fluid discharge device includes a box body, a first partition and a second partition; The box body is provided with a first fluid inlet, a liquid discharge port and an exhaust port, wherein the first fluid inlet is used to communicate with the fluid discharge port of the semiconductor process chamber; The first partition is disposed at the bottom of the box body and divides the box body into a main body area and a liquid storage area. The upper edge of the first partition is spaced apart from the top wall of the box body. The first fluid inlet is in communication with the liquid storage area. The liquid discharge port and the exhaust port are both in communication with the main body area. The second partition is connected to the inner wall of the box body, and at least part of the second partition extends into the liquid storage area. The lower edge of the second partition is spaced apart from the bottom wall of the box body, and along the vertical direction, the upper edge of the first partition is higher than the lower edge of the second partition.

[0005] In a second aspect, an embodiment of the present application discloses a semiconductor process equipment, which includes a semiconductor process chamber and the above-mentioned fluid discharge device, wherein the semiconductor process chamber is provided with a fluid discharge port, and the fluid discharge port is connected to the first fluid inlet.

[0006] The technical solution adopted in this application can achieve the following technical effects: The fluid discharge device disclosed in the embodiment of the present application improves the related art. The first partition is arranged in the box body to divide the box body into a main body area and a liquid storage area. The first fluid inlet is connected to the liquid storage area, and the liquid discharge port and the exhaust port are both connected to the main body area. The lower edge of the second partition extends into the liquid storage area. When the liquid level in the liquid storage area is higher than the lower edge of the second partition when the first fluid inlet is filled with liquid, a liquid seal structure can be formed between the first partition and the second partition. If the factory exhaust pipeline connected to the exhaust port is in a blocked state, the liquid seal structure can prevent the exhaust gas in the factory exhaust pipeline from backflowing into the semiconductor process chamber through the first fluid inlet, thereby avoiding the problem of exhaust gas backflow causing contamination to the semiconductor process chamber and the semiconductor silicon wafers in the semiconductor process chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 This is one of the internal structure schematic diagrams of the fluid discharge device disclosed in the embodiment of the present application; Figure 2 An exploded view of a fluid discharge device disclosed in an embodiment of the present application; Figure 3 This is one of the schematic diagrams of the liquid flow direction inside the fluid discharge device disclosed in the embodiment of the present application; Figure 4 This is one of the schematic diagrams of the internal gas flow direction of the fluid discharge device disclosed in the embodiment of the present application; Figure 5 This is a second schematic diagram of the internal structure of the fluid discharge device disclosed in the embodiment of the present application; Figure 6 The third schematic diagram of the internal structure of the fluid discharge device disclosed in the embodiment of the present application; Figure 7 This is a schematic structural diagram of the sealing structure disclosed in the embodiment of the present application; Figure 8 This is one of the structural schematic diagrams of the protective cover disclosed in the embodiment of the present application; Fig. 9 This is the second structural schematic diagram of the protective cover disclosed in the embodiment of the present application; Fig.10 This is the second schematic diagram of the gas flow direction inside the fluid discharge device disclosed in the embodiment of the present application; Fig.11 for Fig.10A partial enlarged view of Fig.12 A schematic diagram of a sealing portion blocking a flow port disclosed in an embodiment of the present application; Fig.13 A schematic diagram of the baffle mechanism disclosed in an embodiment of the present application in a first position; Fig.14 A schematic diagram of the baffle mechanism disclosed in an embodiment of the present application being in a second position; Fig.15 A schematic diagram of a partial structure of a baffle mechanism disclosed in an embodiment of the present application; Fig.16 This is a schematic diagram of the structure of the semiconductor process equipment disclosed in the embodiment of the present application.

[0008] Description of reference numerals: 100-fluid discharge device, 101-main area, 1011-first space, 1012-second space, 102-liquid storage area, 103-flow channel, 110-box, 111-first fluid inlet, 112-liquid discharge port, 113-exhaust port, 114-second fluid inlet, 120-first partition, 130-second partition, 131-connecting member, 132-water retaining member, 140-third partition, 141-flow port, 150-sealing structure, 151-sealing part, 152-flow part, 1521-first flow hole, 153-guide tube, 154-protective cover, 1541-second flow hole, 160-water guide cap, 170-baffle mechanism, 171-baffle body, 172-limiting part, 180-vacuum pump, 200 - semiconductor process chamber, 210 - fluid discharge port. DETAILED DESCRIPTION

[0009] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0010] The terms "first", "second", etc. in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of the same type, and the number of objects is not limited. For example, the first object can be one or more.

[0011] The technical solutions disclosed in various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0012] During the semiconductor preparation process, waste gas, waste liquid, etc. will inevitably be generated in the semiconductor process chamber. Taking the semiconductor cleaning and drying process as an example, liquid chemical solvents will be used to etch and dissolve semiconductor surface pollutants, organic matter and metal ion pollutants. After cleaning, the semiconductor surface will be dried using the IPA (Isopropyl Alcohol) process. During the above cleaning and drying process, a lot of waste liquid and waste gas will be generated in the semiconductor process chamber. The waste liquid and waste gas need to be discharged to the plant drainage pipeline and the plant exhaust pipeline through pipelines, and collected and treated by the plant drainage pipeline and the plant exhaust pipeline respectively. In addition, in order to improve production efficiency, the plant drainage pipeline and the plant exhaust pipeline will be connected to multiple semiconductor process chambers respectively, and the waste liquid and waste gas discharged from multiple semiconductor process chambers will be collected and treated uniformly.

[0013] During the exhaust gas discharge process of the semiconductor process chamber, the fan of the factory exhaust duct will generate negative pressure inside the factory exhaust duct, thereby guiding the exhaust gas in the semiconductor process chamber into the factory exhaust duct. If the fan fails, the exhaust gas discharged from the semiconductor process chamber will accumulate in the factory exhaust duct. When the exhaust gas accumulates to a certain amount, it is easy to backflow into the semiconductor process chamber through the exhaust passage, causing pollution to the components and semiconductor silicon wafers in the semiconductor process chamber.

[0014] Based on the above, please refer to Figures 1 to 16 The embodiment of the present application discloses a fluid discharge device 100, which is applied to the above-mentioned semiconductor process chamber 200. The semiconductor process chamber 200 is provided with a fluid discharge port 210. The fluid discharge port 210 can be used to discharge waste gas or waste liquid separately, or to discharge waste gas and waste liquid at the same time.

[0015] The fluid discharge device 100 may include a box body 110, a first partition 120 and a second partition 130. The box body 110 may be made of resin. The box body 110 is provided with a first fluid inlet 111, a liquid discharge port 112 and an exhaust port 113. The first fluid inlet 111 is used to communicate with the fluid discharge port 210 of the semiconductor process chamber 200, so that the waste gas and waste liquid discharged from the semiconductor process chamber 200 can flow into the box body 110 through the fluid discharge port 210 and the first fluid inlet 111. The shape of the box body 110 may be a rectangular parallelepiped, a cube, a cylinder, etc. The box body 110 may be specifically composed of a top wall, a bottom wall and a side wall. The top wall and the bottom wall of the box body 110 are connected through the side wall, and the top wall, the bottom wall and the side wall together enclose the internal space of the box body 110.

[0016] The first partition 120 and the second partition 130 can be made of the same material as the box 110, and the first partition 120 and the second partition 130 are both arranged in the box 110, wherein the first partition 120 is arranged at the bottom of the box 110, that is, the first partition 120 is connected to the bottom wall of the box 110, and divides the internal space of the box 110 into a main body area 101 and a liquid storage area 102, and the upper edge of the first partition 120 is spaced from the top wall of the box 110 (with a preset gap), such as Figure 3 As shown, the distance L1 between the upper edge of the first partition 120 and the bottom wall of the box body 110 may be ≥70 mm.

[0017] It should be noted that the first partition 120 can be placed in the vertical direction, and the edges of the first partition 120 will be connected to the bottom wall of the box body 110 and the side wall of the box body 110 respectively. The liquid storage area 102 actually refers to the area with a smaller volume surrounded by the first partition 120 and the bottom wall of the box body 110 and the side wall of the box body 110, and the area inside the box body 110 except the liquid storage area 102 is the main body area 101. The volume of the main body area 101 can be greater than the volume of the liquid storage area 102. The liquid storage area 102 can occupy 30%-40% of the internal space of the box body 110, and the main body area 101 can occupy 60%-70% of the internal space of the box body 110. The first fluid inlet 111 is connected to the liquid storage area 102, and the drain port 112 and the exhaust port 113 are connected to the main body area 101.

[0018] The second partition 130 is connected to the inner wall of the box 110, specifically, it can be connected to the side wall or the top wall of the box 110. At least part of the second partition 130 extends into the liquid storage area 102, and the lower edge of the second partition 130 is spaced from the bottom wall of the box 110. The distance L2 between the lower edge of the second partition 130 and the bottom wall of the box 110 can be ≥30mm. The first partition 120 can extend in the vertical direction. Then, in the vertical direction, the upper edge of the first partition 120 is higher than the lower edge of the second partition 130. Please continue to refer to Figure 3 , the overlapping part of the first partition 120 and the second partition 130 is Δh, Δh=L1-L2, Δh can satisfy the following conditions: 30mm≤Δh≤40mm, the distance d1 between the first partition 120 and the second partition 130 in the horizontal direction can satisfy the following conditions: 45mm≤d1≤55mm, and the distance d2 between the second partition 130 and the inner wall of the box body 110 where the first fluid inlet 111 is located in the horizontal direction is ≈1.75*d1.

[0019] like Figure 3 and Figure 4As shown, the black solid arrow shows the flow direction of the waste liquid. When the semiconductor process chamber 200 discharges the waste liquid into the box body 110 through the first fluid inlet 111, the waste liquid will first reach the liquid storage area 102 and accumulate in the liquid storage area 102. When the liquid level in the liquid storage area 102 rises to a certain height, the lower edge of the second partition 130 can extend below the liquid surface and form a liquid seal structure; when the liquid level further rises and is higher than the upper edge of the first partition 120, the waste liquid will continue to flow to the main area 101 of the box body 110 and be discharged to the factory drainage pipeline through the drain port 112.

[0020] It should be noted that the fluid discharge port 210 and the first fluid inlet 111 can be used to discharge waste gas or waste liquid separately, or can be used to discharge waste gas and waste liquid at the same time. When the fluid discharge port 210 and the first fluid inlet 111 are used to discharge waste liquid at a large flow rate, the waste liquid will occupy more pipeline space, and the discharge amount of waste gas is small at this time; when the fluid discharge port 210 and the first fluid inlet 111 are used to discharge waste liquid at a small flow rate, the waste liquid will only occupy a part of the pipeline space, and waste liquid and waste gas can be discharged at the same time; of course, when there is no need to discharge waste liquid, the fluid discharge port 210 and the first fluid inlet 111 can also be used only for the discharge of waste gas.

[0021] In combination with specific exhaust and liquid discharge scenarios, when the fluid discharge port 210 and the first fluid inlet 111 are used to discharge waste liquid at a large flow rate, the waste liquid will enter the liquid storage area 102 from the first fluid inlet 111. As the liquid level in the liquid storage area 102 continues to rise, the lower edge of the second partition 130 can extend below the liquid level and form a liquid seal structure. Figure 5 As shown, there will be a large liquid level difference on both sides of the second partition 130. Under the action of gravity, the waste liquid flows from the first side of the second partition 130 (the side close to the first fluid inlet 111) through the lower edge of the second partition 130 to the second side of the second partition 130 (the side away from the first fluid inlet 111). When the liquid level is further raised and higher than the upper edge of the first partition 120, the waste liquid will continue to flow to the main area 101 of the box body 110, and be discharged to the factory drainage pipeline through the drain port 112. In this scenario, the emission of waste gas can be basically ignored.

[0022] When the fluid discharge port 210 and the first fluid inlet 111 are used to discharge waste liquid at a small flow rate, the waste liquid will only occupy a part of the pipeline space, and the waste liquid and waste gas can be discharged at the same time. The waste liquid will gather in the liquid storage area 102 and form a liquid seal structure with the second partition 130. The liquid level difference on both sides of the second partition 130 is small; Figure 4 , Fig.10 and Fig.11The black dotted arrow in the middle shows the flow direction of the exhaust gas. Since the interior of the plant exhaust duct is a negative pressure environment, under the action of negative pressure, a gas passage can be formed between the lower edge of the second partition 130 and the liquid surface. The gas passage extends upward at an angle, so that the exhaust gas can flow from the first side of the second partition 130 to the second side of the second partition 130, and further flow to the main area 101, and finally be discharged into the plant exhaust duct through the exhaust port 113. When the fan of the plant exhaust duct fails, the negative pressure effect disappears, the gas passage between the lower edge of the second partition 130 and the liquid surface is closed, and the exhaust gas inside the plant exhaust duct can only reach the main area 101 and the second side of the second partition 130, and cannot continue to enter the area corresponding to the first side of the second partition 130, thereby preventing the exhaust gas in the plant exhaust duct from flowing back into the semiconductor process chamber 200.

[0023] When there is no need to discharge waste liquid and the fluid discharge port 210 and the first fluid inlet 111 are only used for the discharge of waste gas, a liquid surface can be formed in the liquid storage area 102 by adding liquid into the interior of the box body 110, and a liquid seal structure is formed with the lower edge of the second partition 130, which can also prevent the waste gas in the factory exhaust pipe from flowing back into the semiconductor process chamber 200.

[0024] As can be seen from the above, the fluid discharge device 100 disclosed in the embodiment of the present application improves the related art, by providing a first partition 120 in the box body 110, the box body 110 is divided into a main body area 101 and a liquid storage area 102, the first fluid inlet 111 is connected to the liquid storage area 102, and the liquid discharge port 112 and the exhaust port 113 are connected to the main body area 101. The lower edge of the second partition 130 extends into the liquid storage area 102, and when the first fluid inlet 111 is filled with liquid, when the liquid level of the liquid storage area 102 is higher than the lower edge of the second partition 130, a liquid seal structure can be formed between the first partition 120 and the second partition 130. If the factory exhaust pipeline connected to the exhaust port 113 is in a blocked state, the liquid sealing structure can prevent the exhaust gas in the factory exhaust pipeline from flowing back into the semiconductor process chamber 200 through the first fluid inlet 111, thereby avoiding the problem of exhaust gas backflow causing contamination to the semiconductor process chamber 200 and the semiconductor silicon wafers in the semiconductor process chamber 200.

[0025] In order to facilitate the installation of the second partition 130, as Figures 1 to 6As shown, the second partition 130 may include a connector 131 and a water retaining member 132 connected at a preset angle. The connector 131 and the water retaining member 132 may be an integrated structure, or may be made separately and then assembled together by bonding, bolting, etc. The preset angle formed by the connector 131 and the water retaining member 132 may range from 70° to 110°. The connector 131 is connected to the inner wall of the box body 110, and may be connected to the side wall of the box body 110, or may be connected to the top wall of the box body 110. The water retaining member 132 extends into the liquid storage area 102, and the lower edge of the water retaining member 132 is spaced from the bottom wall of the box body 110. In the vertical direction, the upper edge of the first partition 120 is higher than the lower edge of the water retaining member 132. When the liquid level in the liquid storage area 102 rises and is higher than the lower edge of the water retaining member 132, the water retaining member 132 may extend below the liquid surface to form a liquid seal structure.

[0026] In an embodiment of the present application, the above-mentioned preset angle can be 90°, that is, the second partition 130 is L-shaped, the connecting member 131 extends in the horizontal direction and is connected to the side wall of the box body 110, the connecting member 131 is located above the first fluid inlet 111, and the water retaining member 132 extends in the vertical direction and extends into the liquid storage area 102. The water retaining member 132 is arranged opposite to the first fluid inlet 111, so that the waste liquid entering through the first fluid inlet 111 can be first stored in the liquid storage area 102 to form a liquid seal structure.

[0027] like Figures 1 to 6 As shown, the exhaust port 113 is higher than the drain port 112, so that the exhaust process and the drain process do not interfere with each other. The upper edge of the first partition 120 is higher than the drain port 112. The cross-section of the drain port 112 can be circular and have a highest point along the circumferential direction, so the upper edge of the first partition 120 can be higher than the highest point of the drain port 112. Since the height L1 of the first partition 120 directly determines the liquid storage volume of the liquid storage area 102, the advantage of such a design is that it can ensure that the liquid storage area 102 has a large liquid storage volume. Therefore, when the liquid seal structure is formed in the liquid storage area 102, due to the large liquid storage volume, the liquid seal structure is not easily affected by the liquid inlet volume of the first fluid inlet 111, and has better stability.

[0028] The above solution can solve the problem of waste gas backflow into the semiconductor process chamber 200. However, there is also a risk of backflow in the waste liquid discharge process. Specifically, the factory drainage pipeline will be connected to multiple semiconductor process chambers 200 respectively, and the waste liquid discharged from multiple semiconductor process chambers 200 will be uniformly collected and processed. If the factory drainage pipe is blocked, the waste liquid will be gathered in the factory drainage pipe and the main area 101 of the box 110. Once the liquid level of the gathered waste liquid is higher than the exhaust port 113, it is easy to enter the factory exhaust pipeline through the exhaust port 113, causing losses.

[0029] Based on the above situation, if Figures 1 to 6 As shown, the fluid discharge device 100 disclosed in the present application may further include a third partition 140 and a sealing structure 150; the third partition 140 may be composed of a plurality of plates, the third partition 140 is connected to the inner wall of the box body 110, and divides the main area 101 of the box body 110 into a first space 1011 and a second space 1012, as shown in FIG. Figure 1 As shown, the first space 1011 is located on the right side of the box body 110 and close to the upper part of the box body 110, the exhaust port 113 is connected to the first space 1011, the second space 1012 is located below the first space 1011, and the drain port 112 is connected to the second space 1012. In addition, the third partition 140 is provided with a flow port 141, and the first space 1011 and the second space 1012 are connected through the flow port 141, thereby realizing gas-liquid diversion.

[0030] The sealing structure 150 is disposed at the flow port 141. When the liquid level in the second space 1012 rises, in order to prevent the waste liquid from entering the first space 1011 from the flow port 141 and backflowing into the factory exhaust pipe, the flow port 141 can be blocked by the sealing structure 150. The sealing structure 150 can be a valve body, a sealing gasket, a cover plate, etc., as long as it can block the flow port 141 and prevent the waste liquid from entering the first space 1011 from the flow port 141.

[0031] In an optional embodiment of the present application, Figures 6 to 12 As shown, the sealing structure 150 may include a float, the float includes a sealing portion 151 and a flow portion 152, the flow portion 152 is provided with a first flow hole 1521, at least a portion of the flow portion 152 extends into the flow port 141, and is in clearance fit with the flow port 141, and the first flow hole 1521 connects the first space 1011 and the second space 1012. The sealing portion 151 is disposed below the flow portion 152, and when the liquid level in the second space 1012 rises, the sealing portion 151 rises to block the flow port 141.

[0032] In actual usage scenarios, such as Fig.10 and Fig.11 As shown, when the liquid level in the second space 1012 is low, the position of the float is also low, and there is a gap for gas to pass through between the flow portion 152 of the float and the flow port 141, and the first flow hole 1521 connects the first space 1011 and the second space 1012, so that the gas can pass normally; Fig.12As shown, when the liquid level in the second space 1012 rises, the float floats up until the sealing portion 151 blocks the flow port 141. If the plant service drainage pipe is blocked, the waste liquid will gather in the plant service drainage pipe and the second space 1012, and the gathered waste liquid will lift the float, and the sealing portion 151 will block the flow port 141 so that the flow port 141 is in a closed state, thereby preventing the waste liquid from further invading the first space 1011, and further preventing the waste liquid from entering the plant service exhaust pipeline from the exhaust port 113.

[0033] like Figures 6 to 12 As shown, in the process of the floating body floating up, in order to make the sealing part 151 of the floating body accurately dock with the flow port 141, the sealing structure 150 can also include a guide tube 153, the guide tube 153 extends into the flow port 141, the guide tube 153 surrounds a guide space, the guide space is connected with the flow port 141, at least part of the flow part 152 extends into the guide tube 153, and is in clearance with the guide tube 153. In the process of the liquid level in the second space 1012 rising and falling, the floating body can float up and sink according to the preset path under the action of the liquid level and the guide space, thereby improving the accuracy and stability of the docking between the sealing part 151 of the floating body and the flow port 141.

[0034] In an optional embodiment of the present application, Figures 6 to 8 As shown, the sealing structure 150 may also include a protective cover 154, the upper end surface of the protective cover 154 may be connected to the third partition 140, the protective cover 154 is sleeved outside the float, and the float is constrained in the limited space surrounded by the protective cover 154 and the third partition 140, and the protective cover 154 is provided with a second flow hole 1541, the second flow hole 1541 is connected to the second space 1012, when the sealing portion 151 is not lifted, the flow port 141 is not sealed, and the second flow hole 1541 is connected to the first flow hole 1521, and then the indirect connection between the first space 1011 and the second space 1012 can be achieved through the connection with the flow port 141, thereby avoiding affecting the normal exhaust process. When the liquid level in the second space 1012 rises, the liquid enters the protective cover 154 through the second flow hole 1541 of the protective cover 154 and causes the float to float until the sealing portion 151 blocks the flow port 141, thereby preventing waste liquid from entering the factory exhaust pipeline from the exhaust port 113.

[0035] In the process of exhausting gas through the flow port 141, since the exhaust gas will be mixed with small liquid droplets, in order to prevent the small liquid droplets from gathering in the factory exhaust pipe, such as Figures 10 to 12As shown, the fluid discharge device 100 may further include a water guide cap 160, which is connected to the inner wall of the box body 110, and specifically may be connected to the top wall of the box body 110. The open end of the water guide cap 160 faces the guide tube 153. Since the diameter of the open end of the water guide cap 160 is larger than the diameter of the guide tube 153, the water guide cap 160 may be covered outside the guide tube 153. In the process of exhausting through the flow port 141, the exhaust gas will be discharged through the flow port 141 and the guide tube 153. Under the action of the water guide cap 160, the small liquid droplets mixed in the exhaust gas can be intercepted, and the intercepted small liquid droplets are returned to the second space 1012 by using pipes, water permeable holes, etc., to prevent fine liquid water from flowing into the factory exhaust pipeline.

[0036] The above solution can solve the problem of waste liquid backflowing into the factory exhaust pipe. However, if the liquid level of the collected waste liquid is higher than the first fluid inlet 111, it is easy to backflow into the semiconductor process chamber 200 through the first fluid inlet 111, causing contamination to the components and semiconductor silicon wafers in the semiconductor process chamber 200.

[0037] Based on the above situation, if Figures 13 to 15 As shown, the fluid discharge device 100 may further include a baffle mechanism 170, specifically, the third partition 140 is disposed above the discharge port 112, and the third partition 140 is composed of a plurality of plate bodies, wherein the portion of the third partition 140 located above the discharge port 112 may form a flow channel 103 with the inner wall of the box body 110, and the flow channel 103 is connected to the discharge port 112, that is, in the actual discharge process, the waste liquid flowing into the second space 1012 needs to pass through the flow channel 103 before flowing out of the discharge port 112.

[0038] The baffle mechanism 170 is covered at the opening of the flow passage 103 and is rotatably connected to the third partition 140. The baffle mechanism 170 and the third partition 140 may be connected via a rotating shaft or via a flexible connector 131. As long as the baffle mechanism 170 and the third partition 140 can be relatively rotated, the embodiment of the present application does not limit this. The baffle mechanism 170 has a first position and a second position, and can be switched between the first position and the second position by relatively rotating with the third partition 140.

[0039] When the baffle mechanism 170 is in the first position, Fig.13As shown, the flow channel 103 is in an open state, there is a gap between the baffle mechanism 170 and the flow channel 103 for fluid to pass through, and the discharge port 112 can be connected to the second space 1012 through the flow channel 103, and the liquid can be discharged normally. In combination with specific scenarios, when the waste liquid and waste gas are discharged through the fluid discharge port 210 and the first fluid inlet 111, the waste liquid and waste gas in the box 110 will exert a certain thrust on the baffle mechanism 170, so that a gap appears between the baffle mechanism 170 and the open end of the flow channel 103, so that the waste liquid and waste gas can pass smoothly.

[0040] When the baffle mechanism 170 is in the second position, Fig.14 As shown, the baffle mechanism 170 blocks the open end of the flow channel 103, and the flow channel 103 is in a closed state, so that the drain port 112 and the second space 1012 are in a non-connected state. In combination with a specific scenario, when there is no need to discharge waste gas and waste liquid, the baffle mechanism 170 is in the second position under the action of its own gravity, so that the flow channel 103 is in a closed state, which can prevent the waste liquid in the factory drainage pipeline from flowing back into the box body 110; and the liquid flowing back from the factory drainage pipeline into the flow channel 103 will also apply backflow water pressure to the baffle mechanism 170, so that the baffle mechanism 170 can be stably in the second position. Due to the obstruction of the baffle mechanism 170, the waste liquid cannot flow back into the box body 110 through the flow channel 103.

[0041] Furthermore, if Figures 13 to 15 As shown, the baffle mechanism 170 may include a baffle body 171 and a limiting portion 172, wherein the baffle body 171 is rotatably connected to the third partition 140, and the limiting portion 172 is disposed on the bottom wall of the box body 110. When the baffle mechanism 170 is in the first position, the baffle body 171 is separated from the limiting portion 172, so that the flow passage 103 is in an open state, and when the baffle mechanism 170 is in the second position, the baffle body 171 is limitedly matched with the limiting portion 172, so that the flow passage 103 is in a closed state. In addition, the liquid flowing back from the plant drainage pipeline into the flow passage 103 will also apply backflow water pressure to the baffle body 171, so that the baffle mechanism 170 can be stably matched with the limiting portion 172.

[0042] In the semiconductor drying process, in order to enhance the drying effect, a vacuum environment is formed in the semiconductor process chamber 200. Based on this, in an optional embodiment of the present application, as Fig.16As shown, the fluid discharge device 100 may also include a vacuum pump 180. The housing 110 is provided with a second fluid inlet 114. The inlet and outlet of the vacuum pump 180 are respectively connected to the fluid discharge port 210 and the second fluid inlet 114. On the one hand, the vacuum pump 180 can extract the waste gas in the semiconductor process chamber 200, and discharge the waste gas into the housing 110 through the second fluid inlet 114, and discharge it to the factory exhaust pipeline through the exhaust port 113; on the other hand, when there is residual waste liquid in the semiconductor process chamber 200, the vacuum pump 180 can also discharge the waste liquid into the housing 110 through the second fluid inlet 114, and discharge it to the factory exhaust pipeline through the liquid discharge port 112. In addition, the inlet and outlet of the vacuum pump 180 can be respectively connected to the fluid discharge port 210 and the second fluid inlet 114 through a pipeline. The vacuum pump 180 can form a vacuum environment in the semiconductor process chamber 200, and can extract the residual waste gas and waste liquid in the process chamber 200 to enhance the drying effect.

[0043] like Figure 1 to Figure 2 As shown, in order to reduce the difficulty of connecting the fluid discharge device 100 with the semiconductor process chamber 200 and the factory service pipeline, pipeline connection flanges can be provided at the first fluid inlet 111, the second fluid inlet 114, the drain port 112 and the exhaust port 113, and the two parts can be connected by the pipeline connection flange. The pipeline connection flange can be provided on the box body 110 by welding, bonding, bolt connection, etc.

[0044] Please refer to Figures 1 to 16 The embodiment of the present application also discloses a semiconductor process equipment. The disclosed semiconductor process equipment may include a semiconductor process chamber 200 and the above-mentioned fluid discharge device 100. The semiconductor process chamber 200 is provided with a fluid discharge port 210, and the fluid discharge port 210 is connected to the first fluid inlet 111. As can be seen from the above, the fluid discharge device 100 disclosed in the embodiment of the present application improves the related art, by providing a first partition 120 in the box body 110, the box body 110 is divided into a main body area 101 and a liquid storage area 102, the first fluid inlet 111 is connected to the liquid storage area 102, and the liquid discharge port 112 and the exhaust port 113 are connected to the main body area 101. The lower edge of the second partition 130 extends into the liquid storage area 102, and when the first fluid inlet 111 is filled with liquid, when the liquid level of the liquid storage area 102 is higher than the lower edge of the second partition 130, a liquid seal structure can be formed between the first partition 120 and the second partition 130. If the factory exhaust pipeline connected to the exhaust port 113 is in a blocked state, the liquid sealing structure can prevent the exhaust gas in the factory exhaust pipeline from flowing back into the semiconductor process chamber 200 through the first fluid inlet 111, thereby avoiding the problem of exhaust gas backflow causing contamination to the semiconductor process chamber 200 and the semiconductor silicon wafers in the semiconductor process chamber 200.

[0045] The above embodiments of the present application focus on describing the differences between the various embodiments. As long as the different technical features between the various embodiments are not contradictory, they can be combined to form more specific embodiments. Considering the simplicity of the text, they will not be repeated here.

[0046] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A fluid discharge device, used in a semiconductor process chamber, characterized in that: The fluid discharge device (100) comprises a box body (110), a first partition (120) and a second partition (130); The box body (110) is provided with a first fluid inlet (111), a liquid discharge port (112) and an exhaust port (113); the first fluid inlet (111) is used to communicate with a fluid discharge port (210) of the semiconductor process chamber; The first partition (120) is disposed at the bottom of the box body (110) and divides the box body (110) into a main body area (101) and a liquid storage area (102); the upper edge of the first partition (120) is spaced apart from the top wall of the box body (110); the first fluid inlet (111) is in communication with the liquid storage area (102); and the liquid discharge port (112) and the air discharge port (113) are both in communication with the main body area (101); The second partition (130) is connected to the inner wall of the box body (110), and at least a portion of the second partition (130) extends into the liquid storage area (102). The lower edge of the second partition (130) is spaced apart from the bottom wall of the box body (110), and along the vertical direction, the upper edge of the first partition (120) is higher than the lower edge of the second partition (130).

2. The fluid discharge device according to claim 1, characterized in that: The second partition (130) comprises a connecting member (131) and a water retaining member (132) connected at a preset angle, the connecting member (131) being connected to the inner wall of the box body (110), the water retaining member (132) extending into the liquid storage area (102), and the lower edge of the water retaining member (132) being spaced apart from the bottom wall of the box body (110), and the upper edge of the first partition (120) being higher than the lower edge of the water retaining member (132) in the vertical direction.

3. The fluid discharge device according to claim 1, characterized in that: The air outlet (113) is higher than the liquid discharge outlet (112), and the upper edge of the first partition (120) is higher than the liquid discharge outlet (112).

4. The fluid discharge device according to claim 3, characterized in that: The fluid discharge device (100) further comprises a third partition (140) and a sealing structure (150); The third partition (140) is connected to the inner wall of the box body (110) and divides the main area (101) into a first space (1011) and a second space (1012); the exhaust port (113) is in communication with the first space (1011); the liquid discharge port (112) is in communication with the second space (1012); the third partition (140) is provided with a flow port (141); the first space (1011) and the second space (1012) are in communication with each other via the flow port (141); the sealing structure (150) is provided at the flow port (141); when the liquid level in the second space (1012) rises, the sealing structure (150) can block the flow port (141).

5. The fluid discharge device according to claim 4, characterized in that: The sealing structure (150) comprises a floating body, the floating body comprises a sealing portion (151) and a flow-through portion (152), the flow-through portion (152) is provided with a first flow-through hole (1521), at least a portion of the flow-through portion (152) extends into the flow-through port (141) and is clearance-matched with the flow-through port (141), the first flow-through hole (1521) connects the first space (1011) with the second space (1012); The sealing portion (151) is arranged below the flow portion (152), and when the liquid level in the second space (1012) rises, the sealing portion (151) rises to block the flow port (141).

6. The fluid discharge device according to claim 5, characterized in that: The sealing structure (150) further comprises a guide tube (153), the guide tube (153) extending into the flow port (141), and at least a portion of the flow portion (152) extending into the guide tube (153) and being in clearance fit with the guide tube (153).

7. The fluid discharge device according to claim 5, characterized in that: The sealing structure (150) further comprises a protective cover (154), the protective cover (154) being connected to the third partition (140), the protective cover (154) being sleeved outside the floating body, and the protective cover (154) being provided with a second flow hole (1541).

8. The fluid discharge device according to claim 6, characterized in that: The fluid discharge device (100) further comprises a water guide cap (160), the water guide cap (160) being connected to the inner wall of the box body (110), the open end of the water guide cap (160) facing the guide pipe (153), and the water guide cap (160) being arranged outside the guide pipe (153).

9. The fluid discharge device according to claim 4, characterized in that: The fluid discharge device (100) further comprises a baffle mechanism (170), the third partition (140) being arranged above the liquid discharge port (112), the third partition (140) and the inner wall of the box body (110) forming a flow passage (103) which is in communication with the liquid discharge port (112); The baffle mechanism (170) is covered at the opening of the flow passage (103) and is rotatably connected to the third partition (140). The baffle mechanism (170) has a first position and a second position. When in the first position, the flow passage (103) is in an open state, so that the discharge port (112) is connected to the second space (1012) through the flow passage (103). When in the second position, the flow passage (103) is in a closed state, so that the discharge port (112) and the second space (1012) are in a non-connected state.

10. The fluid discharge device according to claim 9, characterized in that: The baffle mechanism (170) comprises a baffle body (171) and a limiting portion (172); the baffle body (171) is rotatably connected to the third partition (140); and the limiting portion (172) is arranged on the bottom wall of the box body (110); When the baffle mechanism (170) is in the first position, the baffle body (171) is separated from the limiting portion (172) so that the flow passage (103) is in an open state; when the baffle mechanism (170) is in the second position, the baffle body (171) is limitedly matched with the limiting portion (172) so that the flow passage (103) is in a closed state.

11. The fluid discharge device according to claim 1, characterized in that: The fluid discharge device (100) further comprises a vacuum pump (180); the housing (110) is provided with a second fluid inlet (114); the second fluid inlet (114) is in communication with the main body region (101); and the inlet and outlet of the vacuum pump (180) are in communication with the fluid discharge port (210) and the second fluid inlet (114), respectively.

12. A semiconductor process equipment, characterized in that: It comprises a semiconductor process chamber (200) and a fluid discharge device (100) according to any one of claims 1 to 11, wherein the semiconductor process chamber (200) is provided with a fluid discharge port (210), and the fluid discharge port (210) is connected to the first fluid inlet (111).

Images