Phosphoric acid etching rate control method, electronic device, storage medium and wet equipment

Abstract

The invention provides a phosphoric acid etching rate control method, an electronic device, a readable storage medium and wet equipment. The method comprises the following steps: determining an etching amount accumulation calculation starting point; according to the etching amount accumulative calculation starting point, accumulatively calculating the etching amount from the batch product entering the phosphoric acid tank at the first time; when the current accumulated etching amount is greater than a preset large acid exchange limit value, calculating an exceeding value according to a difference value between the current accumulated etching amount and the preset large acid exchange limit value, and executing one-time automatic small acid exchange; the following steps are repeatedly executed: accumulative calculation of the etching amount is restarted, when the current accumulative etching amount is larger than the preset automatic small acid change limit value, the exceeding value is calculated again according to the difference value between the current accumulative etching amount and the preset automatic small acid change limit value, and automatic small acid change is executed once; and when the sum of all the exceeding values is greater than a preset manual small acid replacement limit value, reminding an engineer to carry out manual small acid replacement. The method can effectively ensure the stability of the phosphoric acid etching rate.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor etching, and in particular to a phosphoric acid etching rate control method, an electronic device, a readable storage medium and a wet process equipment. Background Art

[0002] With the continuous development of integrated circuits, the critical dimensions of semiconductor devices are getting smaller and smaller, and the etching process is becoming more and more important as an indispensable process in semiconductor production. The general silicon nitride etching process uses a trough wet method to etch silicon wafers, and the acid used is phosphoric acid. A large number of silicon wafers need to be etched in semiconductor production. As the silicon wafers are etched, the proportion of reactants in the acid in the trough will gradually decrease, and the etching rate of the silicon wafers will gradually decrease. However, when the rate decreases to a certain extent, it will affect the efficiency of etching and cause a serious decrease in the number of etched silicon wafers. Therefore, in the process of etching a large number of silicon wafers, new acid needs to be added. The method of adding new acid adopts partial acid change, which is the so-called small acid change. There may be multiple small acid changes in the entire etching process.

[0003] Taking phosphoric acid as an example, the current control method for small acid changes is to replace the amount of acid in the tank with the Nitride (nitride) etching amount. When the cumulative Nitride (nitride) etching amount exceeds the specified etching amount, the machine will automatically perform a small acid change to make up for the phosphoric acid consumption corresponding to the specified etching amount. This does make up for the stability of the etching rate to a certain extent, but this method has certain defects, that is, the part that exceeds the specified etching amount cannot be calculated and compensated in time. When the part that exceeds the specified etching amount accumulates more, the phosphoric acid etching rate will exceed the specified range, resulting in product yield defects.

[0004] It should be noted that the information disclosed in the background technology section of the invention is only intended to deepen the understanding of the general background technology of the invention, and should not be regarded as an admission or suggestion in any form that the information constitutes prior art already known to those skilled in the art. Summary of the invention

[0005] The object of the present invention is to provide a phosphoric acid etching rate control method, an electronic device, a readable storage medium and a wet process equipment, which can effectively ensure the stability of the phosphoric acid etching rate in the wet process equipment, thereby improving the product yield.

[0006] To achieve the above object, the present invention provides a phosphoric acid etching rate control method, comprising:

[0007] Determine the starting point for calculating the cumulative etching amount;

[0008] According to the etching amount cumulative calculation starting point, cumulatively calculate the etching amount from the first batch of products entering the phosphoric acid tank, so as to obtain the cumulative etching amount in the phosphoric acid tank in real time;

[0009] When the current cumulative etching amount in the phosphoric acid tank is greater than the preset large acid change limit value, the excess value is calculated according to the difference between the current cumulative etching amount and the preset large acid change limit value, and an automatic small acid change is performed on the phosphoric acid tank;

[0010] Repeat the following steps: recalculate the accumulative etching amount according to the batch products entering the phosphoric acid tank after the small acid change, so as to obtain the accumulative etching amount in the phosphoric acid tank after the automatic small acid change in real time; when the current accumulative etching amount in the phosphoric acid tank after the automatic small acid change is greater than the preset automatic small acid change limit value, calculate the excess value again according to the difference between the current accumulative etching amount and the preset automatic small acid change limit value, and perform an automatic small acid change on the phosphoric acid tank;

[0011] When the sum of all the exceeding values ​​is greater than the preset manual small acid change limit value, the engineer is reminded to perform manual small acid change on the phosphoric acid tank.

[0012] Optionally, the etching amount is cumulatively calculated based on the batch product process menu and the corresponding etching amount stored in the manufacturing execution system.

[0013] Optionally, the phosphoric acid etching rate control method provided by the present invention further includes:

[0014] After each automatic small acid change is performed on the phosphoric acid tank, the cumulative number of automatic small acid changes of the phosphoric acid tank on that day is updated.

[0015] Optionally, the phosphoric acid etching rate control method provided by the present invention further includes:

[0016] After the engineer performs a manual small acid change on the phosphoric acid tank each time, the cumulative number of manual small acid changes on the phosphoric acid tank on that day is updated.

[0017] Optionally, when the sum of all the exceeding values ​​is greater than a preset manual small acid change limit value, an acid change reminder email is sent to an engineer to remind the engineer to perform a manual small acid change on the phosphoric acid tank, or an engineering support system is used to remind the engineer to perform a manual small acid change on the phosphoric acid tank.

[0018] Optionally, the starting point for calculating the cumulative etching amount is determined according to the automatic acid change log file on the machine side or according to the manufacturing execution system.

[0019] Optionally, the preset large acid change limit value is 526000A, the preset automatic small acid change limit value is 63000A, and the preset manual small acid change limit value is 120000A.

[0020] To achieve the above object, the present invention further provides an electronic device, including a processor and a memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the phosphoric acid etching rate control method described above is implemented.

[0021] To achieve the above object, the present invention further provides a readable storage medium, wherein the readable storage medium stores a computer program, and when the computer program is executed by a processor, the phosphoric acid etching rate control method described above is implemented.

[0022] To achieve the above object, the present invention further provides a wet process equipment, which includes a phosphoric acid tank and the electronic device described above.

[0023] Compared with the prior art, the phosphoric acid etching rate control method, electronic device, readable storage medium and wet process equipment provided by the present invention have the following beneficial effects:

[0024] The phosphoric acid etching rate control method provided by the present invention first determines the cumulative calculation starting point of the etching amount; then, according to the cumulative calculation starting point of the etching amount, starts to cumulatively calculate the etching amount from the first batch of products entering the phosphoric acid tank, so as to obtain the cumulative etching amount in the phosphoric acid tank in real time; when the current cumulative etching amount in the phosphoric acid tank is greater than the preset large acid change limit value, the excess value is calculated according to the difference between the current cumulative etching amount and the preset large acid change limit value, and the phosphoric acid tank is automatically changed once; then the following steps are repeated: according to the batch of products entering the phosphoric acid tank after the small acid change, the etching amount is restarted to be cumulatively calculated, so as to obtain the cumulative etching amount in the phosphoric acid tank after the automatic small acid change in real time; when the current cumulative etching amount in the phosphoric acid tank after the automatic small acid change is greater than the preset automatic small acid change limit value, the excess value is calculated again according to the difference between the current cumulative etching amount and the preset automatic small acid change limit value, and the phosphoric acid tank is automatically changed once; when the sum of all the excess values ​​is greater than the preset manual small acid change limit value, the engineer is reminded to manually change the acid in the phosphoric acid tank. Therefore, the phosphoric acid etching rate control method provided by the present invention can not only make up for the phosphoric acid consumption corresponding to the etching amount corresponding to the preset large acid change limit value, but also ensure the stability of the phosphoric acid etching rate of products such as HV (high voltage devices) whose etching amount generated by each lot (batch of products) is much greater than the preset automatic small acid change limit value by performing an automatic small acid change on the phosphoric acid tank when the current cumulative etching amount in the phosphoric acid tank is greater than the preset automatic small acid change limit value after the automatic small acid change, so as to make up for the phosphoric acid consumption corresponding to the etching amount corresponding to the preset automatic small acid change limit value; by calculating the excess value during each automatic small acid change, when the excess value accumulates and exceeds the preset manual small acid change limit value, notifying the engineer to intervene in the phosphoric acid tank (manual small acid change), so as to make up for the phosphoric acid consumption corresponding to the cumulative etching amount exceeding the preset large acid change limit value and the preset automatic small acid change limit value. In summary, the phosphoric acid etching rate control method provided by the present invention can effectively ensure the stability of the phosphoric acid etching rate, so that the phosphoric acid etching rate can always be stabilized within the tolerable range (spec), effectively improving the product yield.

[0025] Since the electronic device, readable storage medium and wet process equipment provided by the present invention belong to the same inventive concept as the phosphoric acid etching rate control method provided by the present invention, the electronic device, readable storage medium and wet process equipment provided by the present invention at least have all the beneficial effects of the phosphoric acid etching rate control method provided by the present invention. For details, reference may be made to the above description of the beneficial effects of the phosphoric acid etching rate control method provided by the present invention. Therefore, the beneficial effects of the electronic device, readable storage medium and wet process equipment provided by the present invention will not be described one by one here. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A flowchart of a phosphoric acid etching rate control method provided in one embodiment of the present invention;

[0027] Figure 2 A schematic diagram of the block structure of an electronic device provided in one embodiment of the present invention. DETAILED DESCRIPTION

[0028] The phosphoric acid etching rate control method, electronic device, readable storage medium and wet process equipment proposed in the present invention are further described in detail below in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structure, proportion, size, etc. illustrated in the drawings of this specification are only used to match the content disclosed in the specification, so that people familiar with this technology can understand and read, and are not used to limit the limiting conditions for the implementation of the present invention. Any modification of the structure, change in the proportional relationship or adjustment of the size, under the same or similar conditions as the effects that can be produced by the present invention and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0029] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements defined by the statement "comprise one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements. The singular forms "a", "an" and "the" include plural objects, the term "or" is generally used in a sense including "and / or", the term "several" is generally used in a sense including "at least one", and the term "at least two" is generally used in a sense including "two or more". In addition, the terms "first", "second" and "third" are used for descriptive purposes only and are not to be understood as indicating or suggesting relative importance or implicitly indicating the number of the indicated technical features.

[0030] In addition, in the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0031] For ease of understanding, the research background provided by the present invention is briefly introduced first.

[0032] In the phosphoric acid etching machine in the wet process equipment, when the etching amount (EA) of the phosphoric acid tank exceeds the specified amount of 63000A, after the acid in the tank is used up, the phosphoric acid tank will automatically replace the acid to make up for part of the consumption, thereby ensuring the stability of the phosphoric acid etching rate (RTO ER).

[0033] However, the automatic small acid replacement can only make up for the consumption corresponding to the specified amount of 63000A, and cannot make up for the part of the cumulative amount exceeding 63000A. In addition, the etching amount of different products is different. For products such as HV (high voltage devices), the etching amount generated by running one lot (batch of products) is already much greater than 63000A. This type of product will cause the phosphoric acid etching rate to be unstable, affecting the product yield.

[0034] Since the machine cannot record and calculate the part that exceeds the specified amount of 63000A during each automatic small acid change, it is impossible to change the acid in time to compensate for the difference. The only way is to measure the current phosphoric acid etching rate through daily monitoring, and then perform manual intervention based on the measured phosphoric acid etching rate. However, the product between two daily monitoring may have yield risks.

[0035] Based on this, the core idea of ​​the present invention is to provide a phosphoric acid etching rate control method, an electronic device, a readable storage medium and a wet process equipment, which can effectively ensure the stability of the phosphoric acid etching rate in the wet process equipment, thereby improving the product yield.

[0036] It should be noted that the phosphoric acid etching rate control method provided by the present invention can be applied to the electronic device provided by the present invention, and the electronic device can be configured on a wet process device, wherein the electronic device can be a hardware device with various operating systems. It should also be noted that, as can be understood by those skilled in the art, the "large acid change" referred to herein means that all the acid in the phosphoric acid tank is discharged and new acid is replenished.

[0037] To realize the above idea, the present invention provides a phosphoric acid etching rate control method, please refer to Figure 1 , which is a flow chart of a phosphoric acid etching rate control method provided by one embodiment of the present invention. Figure 1 As shown, the phosphoric acid etching rate control method provided by the present invention includes:

[0038] Step S100: determining a starting point for calculating the cumulative etching amount.

[0039] Step S200: according to the etching amount cumulative calculation starting point, cumulatively calculate the etching amount from the first batch of products entering the phosphoric acid tank, so as to obtain the cumulative etching amount in the phosphoric acid tank in real time.

[0040] Step S300: When the current cumulative etching amount in the phosphoric acid tank is greater than the preset large acid change limit value, the excess value is calculated according to the difference between the current cumulative etching amount and the preset large acid change limit value, and an automatic small acid change is performed on the phosphoric acid tank.

[0041] Repeat the following step S400: restart the cumulative calculation of the etching amount according to the batch products entering the phosphoric acid tank after the small acid change, so as to obtain the cumulative etching amount in the phosphoric acid tank after the automatic small acid change in real time; when the current cumulative etching amount in the phosphoric acid tank after the automatic small acid change is greater than the preset automatic small acid change limit value, calculate the excess value again according to the difference between the current cumulative etching amount and the preset automatic small acid change limit value, and perform an automatic small acid change on the phosphoric acid tank.

[0042] Step S500: When the sum of all the exceeding values ​​is greater than the preset manual small acid change limit value, the engineer is reminded to perform manual small acid change on the phosphoric acid tank.

[0043] Therefore, the present invention performs an automatic small acid change on the phosphoric acid tank when the current cumulative etching amount in the phosphoric acid tank is greater than the preset large acid change limit value, which can not only make up for the phosphoric acid consumption corresponding to the etching amount corresponding to the preset large acid change limit value, but also ensure the stability of the phosphoric acid etching rate of products such as HV (high voltage devices) whose etching amount generated by each lot (batch of products) is much greater than the preset automatic small acid change limit value; when the current cumulative etching amount in the phosphoric acid tank after the automatic small acid change is greater than the preset automatic small acid change limit value, the phosphoric acid consumption corresponding to the etching amount corresponding to the preset automatic small acid change limit value can be made up; by calculating the excess value during each automatic small acid change, when the excess value accumulates and exceeds the preset manual small acid change limit value, notifying the engineer to intervene in the phosphoric acid tank (manual small acid change), the phosphoric acid consumption corresponding to the cumulative etching amount exceeding the preset large acid change limit value and the preset automatic small acid change limit value can be made up. In summary, the phosphoric acid etching rate control method provided by the present invention can effectively ensure the stability of the phosphoric acid etching rate, so that the phosphoric acid etching rate can always be stabilized within the tolerable range (spec), effectively improving the product yield.

[0044] It should be noted that, as can be understood by those skilled in the art, the present invention does not limit the specific values ​​of the preset large acid change limit value, the preset automatic small acid change limit value and the preset manual small acid change limit value, and the specific values ​​of the preset large acid change limit value, the preset automatic small acid change limit value and the preset manual small acid change limit value can be set according to actual needs. However, it should be noted that, as can be understood by those skilled in the art, the value of the preset large acid change limit value should be greater than the preset automatic small acid change limit value. It should also be noted that, as can be understood by those skilled in the art, after the engineer manually changes the acid in the phosphoric acid tank, the above steps S100 to S500 can be re-executed, so that the stability of the phosphoric acid etching rate can be effectively guaranteed, so that the phosphoric acid etching rate can always be stable within the tolerable range (spec), effectively improving the product yield. In addition, it should be noted that, as can be understood by those skilled in the art, after each automatic small acid change, the cumulative etching amount in the phosphoric acid tank is reset to restart the cumulative calculation of the etching amount.

[0045] In some exemplary embodiments, the preset large acid change limit value is 526000A, the preset automatic small acid change limit value is 63000A, and the preset manual small acid change limit value is 120000A.

[0046] In some exemplary embodiments, the cumulative calculation starting point of the etching amount is determined according to the automatic acid change log file on the machine side or according to the manufacturing execution system.

[0047] Specifically, the Manufacturing Execution System (MES) is a production information management system for the workshop execution layer of manufacturing enterprises. MES can provide enterprises with management modules including manufacturing data management, production planning and scheduling management, production scheduling management, inventory management, quality management, human resource management, work center / equipment management, tool and fixture management, procurement management, cost management, project kanban management, production process control, bottom-level data integration analysis, and upper-level data integration decomposition, so as to create a solid, reliable, comprehensive and feasible manufacturing collaborative management platform for enterprises. Furthermore, the moment when the manufacturing execution system (MES) is put on the machine for PM (periodic maintenance) or MON_PM (start testing after maintenance is completed) can be determined as the starting point for the cumulative calculation of the etching amount.

[0048] It should be noted that if it is impossible to determine the starting point for the cumulative calculation of the etching amount based on the automatic small acid change log file on the machine side or based on the production execution system, you can also manually click "manual large acid change" on the engineering support system (ESPT) as the starting point for the cumulative calculation of the etching amount.

[0049] In some exemplary embodiments, the etching amount is cumulatively calculated according to a batch product recipe and a corresponding etching amount stored in a manufacturing execution system.

[0050] In some exemplary embodiments, the phosphoric acid etching rate control method provided by the present invention further includes: after each automatic small acid change is performed on the phosphoric acid tank, the cumulative number of automatic small acid changes of the phosphoric acid tank on the day is updated. Thus, by updating the cumulative number of automatic small acid changes of the phosphoric acid tank on the day after each automatic small acid change is performed on the phosphoric acid tank, it is easier for engineers to clearly know how many automatic small acid changes have been performed on the phosphoric acid tank on the day, thereby making it easier for engineers to maintain the phosphoric acid tank.

[0051] In some exemplary embodiments, the phosphoric acid etching rate control method provided by the present invention further includes: after the engineer performs a manual small acid change on the phosphoric acid tank each time, the cumulative number of manual small acid changes on the phosphoric acid tank on the day is updated. Thus, by updating the cumulative number of manual small acid changes on the phosphoric acid tank each time the engineer performs a manual small acid change on the phosphoric acid tank, it is easier for the engineer to clearly know how many manual small acid changes have been performed on the phosphoric acid tank on the day, thereby making it easier for the engineer to maintain the phosphoric acid tank.

[0052] In some exemplary embodiments, the phosphoric acid etching rate control method provided by the present invention further includes: after the engineer performs a manual small acid change on the phosphoric acid tank each time, the most recent manual small acid change time of the phosphoric acid tank is updated. Thus, by updating the most recent manual small acid change time of the phosphoric acid tank each time the engineer performs a manual small acid change on the phosphoric acid tank, the engineer can be easily aware of the most recent manual small acid change time of the phosphoric acid tank.

[0053] In some exemplary embodiments, when the sum of all the excess values ​​is greater than the preset manual small acid change limit value, an acid change reminder email is sent to the engineer to remind the engineer to manually change the acid in the phosphoric acid tank, or the engineer is reminded to manually change the acid in the phosphoric acid tank through the engineering support system. Thus, by sending an acid change reminder email to the engineer or through the engineering support system when the sum of all the excess values ​​is greater than the preset manual small acid change limit value, the engineer can be reminded in time to intervene in the phosphoric acid tank (manual small acid change), thereby effectively ensuring the stability of the phosphoric acid etching rate, so that the phosphoric acid etching rate can always be stable within the tolerable range (spec), and effectively improving the product yield.

[0054] Based on the same inventive concept, the present invention also provides an electronic device, please refer to Figure 2 , which is a schematic diagram of the block structure of an electronic device provided by one embodiment of the present invention. Figure 2 As shown, the electronic device includes a processor 101 and a memory 103, and a computer program is stored in the memory 103. When the computer program is executed by the processor 101, the phosphoric acid etching rate control method described above is implemented. Since the electronic device provided by the present invention and the phosphoric acid etching rate control method provided by the present invention belong to the same inventive concept, the electronic device provided by the present invention at least has all the beneficial effects of the phosphoric acid etching rate control method provided by the present invention. Therefore, the beneficial effects of the electronic device provided by the present invention can refer to the relevant description of the beneficial effects of the phosphoric acid etching rate control method provided by the present invention in the above text, and the beneficial effects of the electronic device provided by the present invention will not be repeated one by one here.

[0055] Please continue to refer to Figure 2 ,like Figure 2As shown, the electronic device also includes a communication interface 102 and a communication bus 104, wherein the processor 101, the communication interface 102, and the memory 103 communicate with each other through the communication bus 104. The communication bus 104 can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The communication bus 104 can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, only one thick line is used in the figure, but it does not mean that there is only one bus or one type of bus. The communication interface 102 is used for communication between the above-mentioned electronic device and other devices.

[0056] It should be noted that the processor 101 referred to in the present invention may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor, etc. The processor 101 is the control center of the electronic device, and various interfaces and lines are used to connect various parts of the entire electronic device.

[0057] It should also be noted that the memory 103 can be used to store the computer program, and the processor 101 implements various functions of the electronic device by running or executing the computer program stored in the memory 103 and calling the data stored in the memory 103. The memory 103 may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable memory (PROM), electrically programmable memory (EPROM), electrically erasable programmable memory (EEPROM) or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, random access memory is available in a variety of forms, such as static random access memory (SRAM), dynamic random access memory (DRAM), synchronous random access memory (SDRAM), double data rate synchronous random access memory (DDRSDRAM), enhanced synchronous random access memory (ESDRAM), synchronous link (Synchlink) dynamic random access memory (SLDRAM), memory bus (Rambus) direct random access memory (RDRAM), direct memory bus dynamic random access memory (DRDRAM), and memory bus dynamic random access memory (RDRAM), etc.

[0058] The present invention also provides a readable storage medium, wherein a computer program is stored in the readable storage medium, and when the computer program is executed by a processor, the phosphoric acid etching rate control method described above can be implemented. Since the readable storage medium provided by the present invention and the phosphoric acid etching rate control method provided by the present invention belong to the same inventive concept, the readable storage medium provided by the present invention at least has all the beneficial effects of the phosphoric acid etching rate control method provided by the present invention, so the beneficial effects of the readable storage medium provided by the present invention can be referred to the relevant description of the beneficial effects of the phosphoric acid etching rate control method provided by the present invention in the above text, and the beneficial effects of the readable storage medium provided by the present invention will not be repeated one by one here.

[0059] It should be noted that the readable storage medium provided by the present invention can adopt any combination of one or more computer-readable media. The readable medium can be a computer-readable signal medium or a computer-readable storage medium. The computer-readable storage medium can be, for example, but not limited to, a system, device or component of electricity, magnetism, light, electromagnetic, infrared or semiconductor, or any combination of the above. More specific examples (non-exhaustive enumeration) of computer-readable storage media include: an electrical connection with one or more wires, a portable computer hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this article, a computer-readable storage medium can be any tangible medium containing or storing a program, which can be used by an instruction execution system, a device or a device or used in combination with it.

[0060] It should also be noted that a computer-readable signal medium may include a data signal propagated in a baseband or as part of a carrier wave, which carries a computer-readable program code. Such propagated data signals may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. A computer-readable signal medium may also be any computer-readable medium other than a computer-readable storage medium, which may send, propagate, or transmit a program for use by or in conjunction with an instruction execution system, apparatus, or device. The program code contained on the computer-readable medium may be transmitted using any suitable medium, including but not limited to wireless, wire, optical cable, etc., or any suitable combination of the above.

[0061] Based on the same inventive concept, the present invention further provides a wet process equipment, the wet process equipment comprising a phosphoric acid tank and the electronic device described above. Since the wet process equipment provided by the present invention comprises the electronic device provided by the present invention, the wet process equipment provided by the present invention also has at least all the beneficial effects of the phosphoric acid etching rate control method provided by the present invention, so the beneficial effects of the wet process equipment provided by the present invention can refer to the relevant description of the beneficial effects of the phosphoric acid etching rate control method provided by the present invention, and will not be repeated here one by one.

[0062] In summary, compared with the prior art, the phosphoric acid etching rate control method, electronic device, readable storage medium and wet process equipment provided by the present invention have the following beneficial effects:

[0063] The present invention first determines the cumulative calculation starting point of the etching amount, and then starts to cumulatively calculate the etching amount from the first batch of products entering the phosphoric acid tank according to the cumulative calculation starting point of the etching amount, so as to obtain the cumulative etching amount in the phosphoric acid tank in real time; when the current cumulative etching amount in the phosphoric acid tank is greater than the preset large acid change limit value, the excess value is calculated according to the difference between the current cumulative etching amount and the preset large acid change limit value, and the phosphoric acid tank is automatically changed once; then the following steps are repeated: the etching amount is restarted to be cumulatively calculated according to the batch of products entering the phosphoric acid tank after the small acid change, so as to obtain the cumulative etching amount in the phosphoric acid tank after the automatic small acid change in real time; when the current cumulative etching amount in the phosphoric acid tank after the automatic small acid change is greater than the preset automatic small acid change limit value, the excess value is calculated again according to the difference between the current cumulative etching amount and the preset automatic small acid change limit value, and the phosphoric acid tank is automatically changed once; when the sum of all the excess values ​​is greater than the preset manual small acid change limit value, the engineer is reminded to manually change the acid in the phosphoric acid tank. Therefore, the present invention performs an automatic small acid change on the phosphoric acid tank when the current cumulative etching amount in the phosphoric acid tank is greater than the preset large acid change limit value, which can not only make up for the phosphoric acid consumption corresponding to the etching amount corresponding to the preset large acid change limit value, but also ensure the stability of the phosphoric acid etching rate of products such as HV (high voltage devices) whose etching amount generated by each lot (batch of products) is much greater than the preset automatic small acid change limit value; when the current cumulative etching amount in the phosphoric acid tank after the automatic small acid change is greater than the preset automatic small acid change limit value, the phosphoric acid consumption corresponding to the etching amount corresponding to the preset automatic small acid change limit value can be made up; by calculating the excess value during each automatic small acid change, when the excess value accumulates and exceeds the preset manual small acid change limit value, notifying the engineer to intervene in the phosphoric acid tank (manual small acid change), the phosphoric acid consumption corresponding to the cumulative etching amount exceeding the preset large acid change limit value and the preset automatic small acid change limit value can be made up. In summary, the phosphoric acid etching rate control method provided by the present invention can effectively ensure the stability of the phosphoric acid etching rate, so that the phosphoric acid etching rate can always be stabilized within the tolerable range (spec), effectively improving the product yield.

[0064] It should be noted that the computer program code for performing the operation of the present invention can be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, C++, and conventional procedural programming languages ​​such as "C" language or similar programming languages. The program code can be executed entirely on the engineer computer, partially on the engineer computer, as a separate software package, partially on the engineer computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer can be connected to the engineer computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computer (for example, using an Internet service provider to connect through the Internet).

[0065] It should be noted that the devices and methods disclosed in the embodiments of this article can also be implemented in other ways. The device implementation described above is only schematic. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architecture, functions and operations of the devices, methods and computer program products according to multiple embodiments of this article. In this regard, each box in the flowchart or block diagram can represent a module, a part of a program or a code, and the module, a part of a program segment or a code contains one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or the flowchart, and the combination of boxes in the block diagram and / or the flowchart, can be implemented by a dedicated hardware-based system for performing a specified function or action, or can be implemented by a combination of dedicated hardware and computer instructions. In addition, the functional modules in the various embodiments of this document may be integrated together to form an independent part, or each module may exist independently, or two or more modules may be integrated to form an independent part.

[0066] It should also be noted that the above description is only a description of the preferred embodiment of the present invention, and is not any limitation on the scope of the present invention. Any changes and modifications made by a person skilled in the art in the field of the present invention based on the above disclosure are within the scope of protection of the present invention. Obviously, a person skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations fall within the scope of the present invention and its equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A phosphoric acid etching rate control method, characterized in that: include: Determine the starting point for calculating the cumulative etching amount; According to the etching amount cumulative calculation starting point, cumulatively calculate the etching amount from the first batch of products entering the phosphoric acid tank, so as to obtain the cumulative etching amount in the phosphoric acid tank in real time; When the current cumulative etching amount in the phosphoric acid tank is greater than the preset large acid change limit value, the excess value is calculated according to the difference between the current cumulative etching amount and the preset large acid change limit value, and an automatic small acid change is performed on the phosphoric acid tank; Repeat the following steps: recalculate the accumulative etching amount according to the batch products entering the phosphoric acid tank after the small acid change, so as to obtain the accumulative etching amount in the phosphoric acid tank after the automatic small acid change in real time; when the current accumulative etching amount in the phosphoric acid tank after the automatic small acid change is greater than the preset automatic small acid change limit value, calculate the excess value again according to the difference between the current accumulative etching amount and the preset automatic small acid change limit value, and perform an automatic small acid change on the phosphoric acid tank; When the sum of all the exceeding values ​​is greater than the preset manual small acid change limit value, the engineer is reminded to perform manual small acid change on the phosphoric acid tank.

2. The phosphoric acid etching rate control method according to claim 1, characterized in that: The etching amount is calculated cumulatively according to the batch product process menu and the corresponding etching amount stored in the manufacturing execution system.

3. The phosphoric acid etching rate control method according to claim 1, characterized in that: The method further comprises: After each automatic small acid change is performed on the phosphoric acid tank, the cumulative number of automatic small acid changes of the phosphoric acid tank on that day is updated.

4. The phosphoric acid etching rate control method according to claim 1, characterized in that: The method further comprises: After the engineer performs a manual small acid change on the phosphoric acid tank each time, the cumulative number of manual small acid changes on the phosphoric acid tank on that day is updated.

5. The phosphoric acid etching rate control method according to claim 1, characterized in that: When the sum of all the exceeding values ​​is greater than the preset manual small acid change limit value, an acid change reminder email is sent to the engineer to remind the engineer to perform a manual small acid change on the phosphoric acid tank, or the engineer is reminded through the engineering support system to perform a manual small acid change on the phosphoric acid tank.

6. The phosphoric acid etching rate control method according to claim 1, characterized in that: The starting point of the cumulative calculation of the etching amount is determined according to the automatic acid change log file on the machine side or according to the manufacturing execution system.

7. The phosphoric acid etching rate control method according to claim 1, characterized in that: The preset large acid change limit value is 526000A, the preset automatic small acid change limit value is 63000A, and the preset manual small acid change limit value is 120000A.

8. An electronic device, characterized in that: The invention comprises a processor and a memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the phosphoric acid etching rate control method according to any one of claims 1 to 7 is implemented.

9. A readable storage medium, characterized in that: The readable storage medium stores a computer program, and when the computer program is executed by a processor, the phosphoric acid etching rate control method according to any one of claims 1 to 7 is implemented.

10. A wet process equipment, characterized in that: The invention comprises a phosphoric acid tank and the electronic device according to claim 8.

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