Split type pedestal for supporting substrate and method for transferring substrate

Abstract

The invention provides a split type base used for supporting substrates and a substrate conveying method, the split type base comprises a center tray and an outer supporting ring which are mutually independently arranged, the outer supporting ring is arranged on the periphery of the center tray in a surrounding mode, the center tray comprises a first area and a second area, the second area is arranged on the periphery of the first area in a surrounding mode, and the first area and the second area are arranged in parallel. The second area comprises a plurality of first matching parts; a contact area is arranged between the outer edge and the inner edge of the outer supporting ring, the contact area is used for making contact with the substrate when the substrate is borne, the height of the contact position, making contact with the substrate W, of the contact area is larger than that of the center tray, and a plurality of second matching parts are arranged on the inner edge of the outer supporting ring; wherein the first matching part is provided with a first projection in the vertical direction, the second matching part is provided with a second projection in the vertical direction, when the center tray and the outer supporting ring are in the first matching state, the first matching part and the second matching part are in contact with each other, and the first projection and the second projection coincide. During thick film deposition, adhesion of the ejector pin and the base can be avoided.

Description

Technical Field

[0001] The present application mainly relates to the semiconductor field, and in particular to a split base for supporting a substrate and a method for transferring the substrate. Background Art

[0002] The rapid development of new energy vehicles has spawned a market for high-power fast charging, and the manufacturing of power devices is inseparable from thick film (thickness greater than 10um) epitaxial deposition. When the deposition thickness reaches more than 100um, the traditional technology is to use a lift pin to transfer the substrate, that is, after the transfer arm places the substrate on the lift pin, the transfer arm is withdrawn, the substrate base rises or the lift pin is lowered to place the substrate on the base. The use of a lift pin has the advantages of less contact with the back of the substrate and less light shadow, but it also faces some problems, including:

[0003] (1) Since the lifting pin is accommodated in a through hole that passes through the base and moves independently of the base, the lifting pin is required to be located on the central axis of the through hole and cannot be tilted, that is, the fitting clearance between the lifting pin and the through hole of the base is very small, so high processing accuracy is required.

[0004] (2) The inner wall of the through hole that accommodates the lifting pin usually has a gap of less than 0.1 mm from the side wall of the lifting pin. When depositing a thick film, byproducts will be deposited in this gap. The amount of film formed once is enough to block the gap and cause the lifting pin and the base to stick together. When lifting, the lifting pin cannot move independently of the base, affecting the film transmission action.

[0005] At present, in order to solve the above problem (2), the commonly used means include multiple film formation, that is, after depositing a film of a certain thickness (<100um), the substrate is removed and the base is cleaned, etc., but this will seriously affect the yield and film quality. Summary of the invention

[0006] The technical problem to be solved by the present application is to provide a split base and a film transfer method to avoid the occurrence of adhesion between the ejector pin and the base during thick film deposition.

[0007] In order to solve the above technical problems, the present application provides a split base for supporting a substrate, comprising a center tray and an outer support ring which are independently arranged, the outer support ring being arranged around the outer periphery of the center tray, wherein the center tray comprises a first area and a second area, the second area being arranged around the periphery of the first area, the second area comprising a plurality of first matching portions; a contact area is provided between the outer edge and the inner edge of the outer support ring, the contact area being used to contact the substrate when carrying the substrate, the height of the contact position of the contact area in contact with the substrate W being higher than the height of the center tray, and a plurality of second matching portions are provided at the inner edge of the outer support ring; wherein the first matching portion has a first projection in the vertical direction, and the second matching portion has a second projection in the vertical direction, and when the center tray and the outer support ring are in the first matching state, the first matching portion and the second matching portion are in contact with each other, and the first projection and the second projection overlap.

[0008] In one embodiment of the present application, the center tray includes a first upper surface and a first lower surface, and when carrying a substrate, the first upper surface faces the substrate, the first mating portion includes a first recessed portion recessed upward from the first lower surface, and the second mating portion includes a first protruding portion extending toward the center tray, and when the center tray and the outer support ring are in a first mating state, the first protruding portion is located in the first recessed portion, and the first protruding portion is located below the first recessed portion.

[0009] In one embodiment of the present application, the first mating portion includes a second protrusion protruding toward the outer support ring, the outer support ring includes a second upper surface and a second lower surface, the second mating portion includes a second recessed portion recessed upward from the second lower surface, when the center tray and the outer support ring are in a first mating state, the second protrusion is located in the second recessed portion, and the second protrusion is located below the second recessed portion; the inner edge of the outer support ring also includes a plurality of through grooves, the through grooves have a third projection in the vertical direction, when the center tray and the outer support ring are in a second mating state, the first projection and the second projection do not overlap, and the first projection is located in the third projection, and the second protrusion can move in the through groove along the vertical direction.

[0010] In an embodiment of the present application, the height of the first area is lower than the height of the second area.

[0011] In an embodiment of the present application, the second area includes a flat continuous table surface, and the continuous table surface includes a plane, and the plane is continuous along the circumference of the center tray.

[0012] In one embodiment of the present application, the continuous table top also includes a first transition surface and a second transition surface; the first transition surface extends from the inner periphery of the plane to the first area; the second transition surface extends from the outer periphery of the plane to the outer edge of the center tray; the angle between the first transition surface and the plane is 1-45°, and / or the angle between the second transition surface and the plane is 1-45°.

[0013] In an embodiment of the present application, the second area includes a continuous convex surface that protrudes upward and is continuous along the circumference of the center tray.

[0014] In one embodiment of the present application, the second region includes a plurality of mutually staggered grooves.

[0015] In an embodiment of the present application, the central tray and / or the outer support ring includes a plurality of through holes.

[0016] In an embodiment of the present application, the distribution of the through holes is influenced by the following principle: along the extension direction of the ray collinear with the radius of the center tray, the ventilation volume per unit area gradually decreases.

[0017] In one embodiment of the present application, the contact area is an inclined surface that is continuous along the circumference of the outer support ring; or the contact area includes a stepped structure with a plurality of steps; or the contact area includes a plurality of grooves.

[0018] In one embodiment of the present application, the contact area is provided with a plurality of support columns, and the plurality of support columns are arranged at intervals along the circumference of the outer support ring. When the outer support ring carries a substrate, the substrate contacts the plurality of support columns.

[0019] In one embodiment of the present application, the first upper surface of the center tray includes a plurality of first ridges extending in the radial direction, and the second upper surface of the outer support ring includes a plurality of second ridges extending in the radial direction.

[0020] In an embodiment of the present application, the first upper surface of the center tray includes a plurality of first grooves extending in the radial direction, and the second upper surface of the outer support ring includes a plurality of second grooves extending in the radial direction.

[0021] In order to solve the above technical problems, the present application also proposes a film transmission method, comprising:

[0022] Step S11: Control the center tray and the outer support ring in the split base to be in a first mating state, wherein the split base comprises a center tray and an outer support ring that are independently arranged, the outer support ring is arranged around the outer periphery of the center tray, the center tray has a first mating portion, the outer support ring has a second mating portion, the first mating portion has a first projection in the vertical direction, and the second mating portion has a second projection in the vertical direction, when the center tray and the outer support ring are in the first mating state, the first projection and the second projection overlap, and the first mating portion is located above the second mating portion;

[0023] Step S12: controlling the central tray to rise to a wafer taking height, and the central tray receives and carries the substrate;

[0024] Step S13: controlling the center tray to descend to a first height, at which the substrate is separated from the center tray and carried by the outer support ring, the substrate contacts the outer support ring, and the center tray and the outer support ring are in a first mating state, wherein the substrate contacts a contact area of ​​the outer support ring, the contact area is located between an outer edge and an inner edge of the outer support ring, and a height of a contact position of the contact area in contact with the substrate W is higher than a height of the center tray;

[0025] Step S14: rotating the lifting rod so that the supporting portion of the lifting rod is aligned with the second matching portion;

[0026] Step S15: controlling the lifting rod to rise, and the supporting part drives the outer supporting ring and the center tray to rise to the process position at the same time by pushing the second matching part.

[0027] In order to solve the above technical problems, the present application also proposes a film transmission method, comprising:

[0028] Step S21: controlling the center tray in the split base to rotate to a first angle, at which the center tray can be independently lifted and lowered relative to the outer support ring, wherein the split base comprises a center tray and an outer support ring that are independently arranged, and the outer support ring is arranged around the outer periphery of the center tray;

[0029] Step S22: Control the central tray to a wafer taking height, and the central tray receives and carries the substrate;

[0030] Step S23: controlling the center tray to descend to a second height, at which the substrate is separated from the center tray and carried by the outer support ring, and the substrate contacts the outer support ring, wherein the substrate contacts a contact area of ​​the outer support ring, the contact area is located between the outer edge and the inner edge of the outer support ring, and the height of the contact position of the contact area in contact with the substrate W is higher than the height of the center tray;

[0031] Step S24: controlling the center tray to descend to a third height, and controlling the center tray to rotate to a second angle at the third height, wherein the center tray has a first matching portion, the outer support ring has a second matching portion, the first matching portion has a first projection in the vertical direction, and the second matching portion has a second projection in the vertical direction, and at this time, the first projection and the second projection overlap;

[0032] Step S25: controlling the lifting rod to rise, and the supporting portion of the lifting rod supports the bottom of the center tray, so that the first matching portion and the second matching portion contact each other;

[0033] Step S26: Control the lifting rod to continue to rise, and at the same time drive the outer support ring and the center tray to rise to the process position.

[0034] The split base of the present application adopts a split-design center tray and an outer support ring, which eliminates the method of using ejector pins to pass through and protrude from the through holes on the base to support the substrate in the prior art. The center tray and the outer support ring cooperate to achieve a method in which the center tray can be lifted and lowered alone to connect the substrate, and the center tray and the outer support ring can be lifted and lowered or rotated at the same time for deposition. This design avoids the problem of adhesion between the base and the lifting ejector pins, at least partially solves the problems existing in the prior art, and is beneficial to improving the yield of substrate processing and ensuring film quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings are included to provide a further understanding of the present application. They are included and constitute a part of the present application. The accompanying drawings illustrate embodiments of the present application and together with the present specification serve to explain the principles of the present application. In the accompanying drawings:

[0036] Figure 1 is an exploded schematic diagram of a split base according to the first embodiment of the present application;

[0037] Figure 2 is a bottom view schematic diagram of the center tray of the split base in the first embodiment of the present application;

[0038] Figure 3 is a schematic top view of the outer support ring of the split base in the first embodiment of the present application;

[0039] Figure 41 is a side view schematic diagram of the center tray of the split base in the first embodiment of the present application (the base sheet is also shown);

[0040] Figure 5 and Figure 6 yes Figure 4 Schematic diagram of enlarged area A1 in two embodiments;

[0041] Figure 7 to Figure 9 yes Figure 4 Schematic diagrams of enlarged area A2 in three embodiments;

[0042] Figure 10 to Figure 12 Three implementations of the grooves in the second region of an embodiment of the present application are shown;

[0043] Fig.13 An example is given along Figure 3 A cross-sectional view of the C1-C1 line in FIG.

[0044] Figure 14 to Figure 16 Three implementation modes of the contact area of ​​an embodiment of the present application are shown;

[0045] Fig.17 is a schematic top view of a center tray in a split base according to the second embodiment of the present application;

[0046] Fig.18 is a bottom view schematic diagram of the outer support ring in the split base of the second embodiment of the present application;

[0047] Fig.19 The first matching state of the center tray and the outer support ring of the second embodiment of the present application is shown;

[0048] Fig. 20 The second matching state of the center tray and the outer support ring of the second embodiment of the present application is shown;

[0049] Fig.21 and Fig. 22 is a schematic diagram of the distribution of through holes in a center tray according to an embodiment of the present application;

[0050] Fig.23 is a top view of a center tray and an outer support ring in an embodiment of the present application when they are in a first mating state;

[0051] Figures 24 to 30 It is a process diagram of the film transmission method of Example 1 of the present application. DETAILED DESCRIPTION

[0052] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0053] As shown in this application, unless the context clearly indicates an exception, the words "a", "an", "a kind" and / or "the" do not refer to the singular, but also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0054] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant field may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the authorization specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so that once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0055] In the description of the present application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction, and therefore cannot be understood as limiting the scope of protection of the present application; the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0056] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0057] In addition, it should be noted that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above words have no special meaning and cannot be understood as limiting the scope of protection of this application. In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description of this article. In addition, it is required to understand this application not only by the actual terms used, but also by the meaning implied by each term.

[0058] The split base for supporting the substrate of the present application is suitable for various semiconductor processing processes, preferably suitable for thin film deposition processes, and is used in conjunction with corresponding processing chambers. The substrate is also called a wafer, a substrate, etc., and the present application does not limit the material, shape, etc. of the substrate.

[0059] Figure 1 is an exploded schematic diagram of the split base of the first embodiment of the present application, Figure 2 1 is a bottom view of the center tray of the split base in the first embodiment of the present application. Figure 3 Schematic diagram of the top view of the outer support ring of the split base in the first embodiment of the present application. Figure 1 As shown, the split base includes a central tray 110 and an outer support ring 120 which are independently arranged. The outer support ring 120 is arranged around the outer periphery of the central tray 110. Figure 2 As shown, the center tray 110 is a solid circular disk having an outer edge 111. Figure 3 As shown, the outer support ring 120 is in the shape of a hollow annulus and has an outer edge 121 and an inner edge 122 .

[0060] Figure 41 is a schematic side view of the center tray of the split base in the first embodiment of the present application, which also shows the substrate W carried on the center tray 110. Figure 2 and Figure 4 The center tray 110 includes a first area 210 and a second area 310. The second area 310 is arranged around the periphery of the first area 210. The second area 310 includes a plurality of first matching portions 410. Figure 2 , the dotted circle represents the boundary between the first area 210 and the second area 310, the inside of the dotted circle is the circular first area 210, and the outside is the annular second area 310. In some embodiments, the width of the annular ring of the second area 310 is about 10 mm.

[0061] The present application does not limit the size of the center tray 110 , and the size can be set according to the size of the substrate W to be carried. In some embodiments, the diameter of the center tray 110 ranges from 150 mm to 280 mm.

[0062] It should be noted that the illustration is only an example and is not intended to limit the shape and size of the first area 210 and the second area 310. In other embodiments, the first area 210 and the second area 310 may be of any shape.

[0063] refer to Figure 4 In the first embodiment, the height of the first region 210 is lower than the height of the second region 310, that is, the center tray 110 is low in the middle and high at the edges, and the first upper surface 112 of the center tray 110 facing the substrate W has a height difference, which is low in the center and high around. In some embodiments, this height difference is hundreds of microns. According to such a setting, when carrying the substrate W, the substrate W only contacts the higher second region 310, which can reduce the contact area between the back of the substrate W and the base, and reduce the damage to the back of the wafer.

[0064] like Figure 4 As shown, in some embodiments, the first region 210 has a central protrusion 211 located in the center, the central protrusion 211 protrudes toward the substrate W, and its height is lower than the height of the second region 310. In some cases, the substrate W has a certain degree of warpage, and for the bowl-shaped warpage that bulges downward in the middle of the substrate W, the central protrusion 211 will contact the warped portion, playing a supporting role while preventing the substrate W from excessively contacting the first region 210 on the first upper surface 112 of the center tray 110, thereby reducing the contact area. Figure 5 and Figure 6 yes Figure 4 The area A1 in the two embodiments is an enlarged schematic diagram, Figure 5 In the embodiment, the top of the central raised portion 211 is flat. Figure 6In the embodiment, the top of the central protrusion 211 is rounded and smooth, which can further reduce the contact area with the substrate W.

[0065] Similarly, in order to reduce the contact area with the substrate W, the second region 310 also has various variations. Figure 7 to Figure 9 yes Figure 4 FIG. 1 is an enlarged schematic diagram of area A2 in three embodiments. Figure 7 As shown, the top of the second region 310 is flat. Figure 7 , the second region 310 can be a flat continuous table 313 as a whole ("continuous" here means continuous along the circumference of the center tray 110), and the continuous table 313 includes a plane 3131 that is continuous along the circumference of the center tray 110. When carrying the substrate W, the substrate W can be supported by the continuously distributed support force of the continuous table 313 in its circumference, rather than being supported by a number of support points, which has the benefit of uniform force. In some cases, when the temperature of the substrate W is high, a certain softening deformation will occur, and the support force received by the substrate W in the circumferential direction is continuous and uniform, so that the local friction between the substrate W and the supporting component, that is, the second region 310 here, is smaller, and it is not easy to scratch the back of the substrate W. In some embodiments, the second region 310 and the first region 210 are vertically intersected to form a step.

[0066] In some embodiments, Figure 7 , the continuous table surface 313 also includes a first transition surface 3132. The first transition surface 3132 extends from the inner periphery of the plane 3131 to the first area 210. In one embodiment, the first transition surface 3132 is an inclined surface that is continuous along the circumference of the center tray 110; in another embodiment, the first transition surface 3132 is a curved surface that is continuous along the circumference of the center tray 110. The angle between the first transition surface 3132 and the plane 3131 is 1-45°. When the first transition surface 3132 is a curved surface, the angle between the first transition surface 3132 and the plane 3131 is 1-45°, which means that the angle between the tangent plane of the first transition surface 3132 at the connection with the plane 3131 and the plane 3131 is 1-45°.

[0067] In some embodiments, Figure 7, the continuous table surface 313 also includes a second transition surface 3133. The second transition surface 3133 extends from the outer periphery of the plane 3131 to the outer edge 111 of the center tray 110. In one embodiment, the second transition surface 3133 is an inclined surface that is continuous along the circumference of the center tray 110; in another embodiment, the second transition surface 3133 is a curved surface that is continuous along the circumference of the center tray 110. The angle between the second transition surface 3133 and the plane 3131 is 1-45°. When the second transition surface 3133 is a curved surface, the angle between the second transition surface 3133 and the plane 3131 is 1-45°, which means that the angle between the tangent plane of the second transition surface 3133 at the connection with the plane 3131 and the plane 3131 is 1-45°. In some cases, the outer edge of the substrate W may also deviate downward relative to the center tray 110. Therefore, providing the second transition surface 3133 can prevent the substrate W from softening and being damaged by scratching at right angles when moving relative to the center tray 110. In addition, it is also beneficial to reduce the contact area between the center tray 110 and the substrate W.

[0068] like Figure 8 As shown, the top of the second area 310 is rounded, and the junction area between the second area 310 and the first area 210 is also smoothly transitioned. According to this embodiment, the second area 310 includes a continuous convex surface that is upwardly protruding and continuous along the circumference of the center tray 110. In the present invention, "continuous convex surface" means that: observed along the radial direction of the center tray 110, the continuous convex surface has a smooth protrusion, and the smooth protrusion is used to contact the substrate W. The continuous convex surface also has the same benefits as the continuous table surface described in the previous paragraph, which will not be repeated. In addition, compared with the continuous table surface, the contact area between the continuous convex surface and the back of the substrate W is smaller, which is more conducive to reducing local friction and protecting the substrate W.

[0069] exist Figure 8 In the illustrated embodiment, both sides of the smooth protrusion are connected to adjacent surfaces (such as the outer edge 111 and the upper surface of the first region 210) through smooth curved surfaces when viewed radially from the center tray 110. In other embodiments of the present invention, both sides of the smooth protrusion may also be connected to adjacent surfaces through planes.

[0070] like Fig. 9 As shown, in this embodiment, the second region 310 includes a plurality of mutually staggered grooves 330. The grooves 330 can increase friction to prevent the substrate W from slipping during the lifting process, thereby causing damage to the substrate W. In some embodiments, the grooves 330 are arranged on a continuous convex surface or a continuous table surface in the second region 310.

[0071] Figure 10 to Figure 12 Three embodiments of the grooves 330 in the second region 310 are shown, wherein the grooves are represented by lines. Fig.10, the second area 310 is completely covered by crisscrossing grooves. Fig.11 The grooves are not continuously covered in the second region 310, that is, grooves are provided in some places and not in other places. The present application does not limit the area ratio of the grooves in the second region 310. Fig.10 and Fig.11 In the Fig.12 In the embodiment, the grooves include a circular groove and grooves distributed along the radial direction.

[0072] Fig.13 1 is a side view of the split base of the first embodiment of the present application, wherein the center tray 110 and the outer ring 120 are in a first mating state. In some embodiments, in the first mating state, there is a gap P1 between the center tray 110 and the outer ring 120, such as Fig.13 As shown, the width of the gap P1 is 0.1-2 mm. According to such a gap setting, even when the deposition thickness is greater than 0.1 mm, adhesion will not occur between the center tray 110 and the outer support ring 120.

[0073] In other embodiments, when assembled, the gap between the center tray 110 and the outer support ring 120 is smaller, for example, less than 0.1 mm.

[0074] like Fig.13 As shown, the outer edge 121 of the outer support ring 120 is higher than the inner edge 122 of the outer support ring 120, and the outer support ring 120 has a protrusion 125. Observed along the radial direction of the outer support ring 120, the protrusion 125 is located outside the contact area 123. The protrusion 125 can be a continuous table or a continuous convex surface. In some embodiments, the protrusion 125 can be arranged discontinuously, for example, it can be a plurality of discretely distributed small protrusions, uniformly distributed along the circumference of the outer support ring 120, for example, 6, 8, 12. The protrusion 125 is used to prevent the substrate W from sliding out of the base.

[0075] like Fig.13 A contact area 123 is provided between the outer edge 121 and the inner edge 122 of the outer support ring 120. The contact area 123 is used to contact the substrate W when carrying the substrate W. When the center tray 110 and the outer support ring 120 are assembled, the height of the contact position of the contact area 123 that contacts the substrate W is higher than the height of the center tray 110. When the first upper surface 112 of the center tray 110 has different heights, the height of the contact position of the contact area 123 that contacts the substrate W is higher than the highest height of the center tray 110. Fig.13As shown, in this embodiment, the highest height in the center tray 110 is the height of the second area 310, and the contact area 123 is higher than the second area 310. This arrangement allows the center tray 110 and the outer support ring 120 to be assembled and carry the substrate W, and the substrate W is only carried by the outer support ring 120, and the edge of the substrate W contacts the outer support ring 120 in the contact area 123, and the contact area is small. In some embodiments, the distance between the contact area 123 and the center of the center tray 110 is about 140 mm-160 mm, or about 150 mm.

[0076] Figure 14 to Figure 16 Three embodiments of the contact area 123 are shown. Fig.14 The contact area 123 is an inclined surface continuously distributed along the circumference of the outer support ring 120, so that the edge of the substrate W forms a line contact with the contact area 123, and the contact area is small.

[0077] like Fig.15 The contact area 123 includes a stepped structure with a plurality of steps, and the edge of the wafer W is in surface contact with a portion of the step area, and this contact may be a line contact or a surface contact. Fig.16 The contact area 123 includes a plurality of grooves, and the edge of the wafer W contacts with the high-height protrusion structure in the groove, and this contact can be a line contact or a surface contact. In some embodiments, Fig.16 The embodiment shown can also be combined with Fig.14 or Fig.15 In the embodiment shown.

[0078] In some embodiments, the contact area 123 is provided with a plurality of support columns (not shown), and the plurality of support columns are arranged at intervals along the circumference of the outer support ring 120. When the outer support ring 120 carries the substrate W, the substrate W makes point contact with the plurality of support columns. During the process, when air is ventilated between the susceptor and the substrate W through the through hole of the center tray 110, the gas can flow along the space between the support columns to the outside of the susceptor and the substrate W, effectively preventing the substrate W from adhering to the outer support ring 120 due to epitaxial deposition.

[0079] Need to explain, Figure 14 to Figure 16 In the figure, a groove is provided in the second area 310 of the center tray 110 , and a dotted line 311 indicates the boundary between the center tray 110 and the outer support ring 120 .

[0080] like Figure 2 As shown, the second area 310 includes a plurality of first matching portions 410. Figure 3As shown, the inner edge 122 of the outer support ring 120 is provided with a plurality of second matching portions 420. The first matching portion 410 has a first projection S1 in the vertical direction (which can also be described as in the top view direction), and the second matching portion 420 has a second projection S2 in the vertical direction. When the center tray 110 and the outer support ring 120 are in the first matching state, the first projection S1 and the second projection S2 overlap.

[0081] The present application does not limit the size, shape, and number of the first matching portion 410 and the second matching portion 420. Exemplarily, when viewed from a direction perpendicular to the lower surface of the base, the first protrusion 421 may be a square, an isosceles trapezoid, or a semicircle, and correspondingly, the first recessed portion 411 is a shape that matches the first protrusion 421. The overlap of the first projection S1 and the second projection S2 indicates that S1 and S2 may overlap partially or completely, and when S1 and S2 are different in size, for example, S1>S2, then S2 may be completely located in S1.

[0082] Combination Figure 2 and Figure 3 As shown, three first matching portions 410 are evenly spaced along the circumference in the second area 310 of the bottom surface of the center tray 110, and three second matching portions 420 are evenly spaced along the circumference on the inner edge 122 of the outer support ring 120. Figure 4 The center tray 110 includes a first upper surface 112 and a first lower surface 113 , and the first upper surface 112 faces the substrate W when carrying the substrate W. Figure 2 The first lower surface 113 is shown, and the first matching portion 410 includes a first recessed portion 411 recessed upward from the first lower surface 113. The first recessed portion 411 is specifically a groove with a certain depth. It can be understood that the center tray 110 should have a certain thickness, and the depth of the first recessed portion 411 is less than the thickness. Figure 3 The second mating portion 420 includes a first protrusion 421 extending toward the center tray 110 . When the center tray 110 and the outer support ring 120 are in the first mating state, the first protrusion 421 is located in the first recessed portion 411 , and the first protrusion 421 is located below the first recessed portion 411 . Fig.13 An example is given along Figure 3 A cross-sectional view along the C1-C1 line in FIG. 4 shows the positional relationship between the first protrusion 421 and the first recessed portion 411. In the first mating state, the first protrusion 421 and the first recessed portion 411 are engaged with each other, and at this time, S2 is entirely located in S1.

[0083] Figure 1 The figure also shows a lifting rod 130, which has three supporting parts 131 at the top, corresponding to the three second matching parts 420 on the outer supporting ring 120 respectively. Figure 1 and Fig.13 In the first mating state, the support portion 131 is aligned with the first protrusion 421 as the second mating portion 420. When the lifting rod 130 moves upward, the support portion 131 can push the first protrusion 421, and the first protrusion 421 correspondingly pushes the first recessed portion 411, so that the entire center tray 110 and the outer support ring 120 rise together. When the outer support ring 120 needs to remain stationary and the center tray 110 rises alone, it is only necessary to rotate the lifting rod 130 so that the support portion 131 is not aligned with the second mating portion 420, but is aligned with other positions in the second area 310 at the bottom of the center tray 110 except the first mating portion 410, and then the lifting rod 130 is raised, so that only the center tray 110 can be pushed to rise. The lifting rod 130 can be a lifting pin. Without modifying the existing lifting pin, the base is improved to the split base of the present application, and the improvement cost is low.

[0084] In other embodiments, S2 may be partially located in S1, for example, the first protruding portion 421 is only partially located in the first recessed portion 411. As long as the two have a common portion, during the ascending process of the lifting rod 130, the supporting portion 131 is aligned with the second matching portion 420, so that the center tray 110 and the outer supporting ring 120 can be ascended together. Of course, the first matching state of the first embodiment is relatively stable, which can ensure the stability of the center tray 110 and the outer supporting ring 120 during the lifting process.

[0085] In some embodiments, the first protrusion 421 has a chamfer to facilitate self-centering of the center tray 110. For example, when the base is placed horizontally, at least part of the side wall of the first protrusion 421 has a certain angle of inclination, so that the lower part of the first protrusion 421 has a larger area than the upper part of the first protrusion 421.

[0086] The present application also includes a film transmission method, which can be performed using the split base of embodiment 1. Specifically, the method includes the following steps:

[0087] Step S11: Control the center tray 110 and the outer support ring 120 in the split base to be in the first matching state. The split base includes a center tray 110 and an outer support ring 120 that are independently arranged, the outer support ring 120 is arranged around the outer periphery of the center tray 110, the center tray 110 has a first matching portion 410, the outer support ring 120 has a second matching portion 420, the first matching portion 410 has a first projection in the vertical direction, and the second matching portion 420 has a second projection in the vertical direction. When the center tray 110 and the outer support ring 120 are in the first matching state, the first projection and the second projection overlap, and the first matching portion 410 is located above the second matching portion 420.

[0088] The present application does not limit how to control the center tray 110 and the outer ring 120 to be in the first mating state. In some embodiments, the center tray 110 or the outer ring 120 can be rotated to align the first mating portion 410 and the second mating portion 420, and to match the heights of the two, so that the first mating portion 410 and the second mating portion 420 are engaged with each other. The center tray 110 can be used as follows: Figure 1 The lifting rod 130 shown in the figure is used to adjust its height. The lifting rod 130 can also rotate. After the support part 131 carries the center tray 110, the lifting rod 130 rotates to drive the center tray 110 to rotate, thereby adjusting the position of the center tray 110 in the horizontal plane.

[0089] Step S12: Control the central tray 110 to a wafer taking height, and the central tray 110 receives and carries the substrate W.

[0090] This step can be performed by the robot arm 510 to place the film. Fig.24 FIG. 5 shows a robot arm 510 for carrying a substrate. The substrate W may be carried or clamped by a robot finger 511. Fig.25 As shown, the robot arm 510 transfers the substrate W to the top of the base in the horizontal direction, and the lifting rod 130 rises in the direction indicated by the arrow. At this time, the support portion 131 is staggered from the second matching portion 420 and is only used to push the center tray 110. Fig.26 As shown, at this time, the center tray 110 rises to the film taking height, and the supporting substrate W is separated from the mechanical finger 511. More specifically, it is supported by the second area 310, and then, along Fig.26 The robot arm 510 is retracted to the left in the direction indicated by the middle arrow.

[0091] Step S13: Control the center tray 110 to descend to a first height. At the first height, the substrate W is detached from the center tray 110 and is carried by the outer support ring 120. The substrate W is in contact with the outer support ring 120, and the center tray 110 and the outer support ring 120 are in a first mating state, wherein the substrate W is in contact with the contact area 123 of the outer support ring 120, and the contact area 123 is located between the outer edge and the inner edge of the outer support ring 120. The height of the contact position of the contact area 123 with the substrate W is higher than the height of the center tray 110.

[0092] like Fig. 27 As shown, when the lifting rod 130 is controlled to descend, the center tray 110 also descends under the action of gravity. Fig.28The current height of the center tray 110 shown in FIG. 1 is the first height, and the center tray 110 and the outer support ring 120 are in the first matching state. Since the outer support ring 120 has a contact area 123 for supporting the edge of the substrate W, the height of the contact position of the contact area 123 with the substrate W is higher than the height of the center tray 110, so that the substrate W is separated from the support of the center tray 110 and is supported by the outer support ring 120 instead.

[0093] Step S14 : rotating the lifting rod 130 to align the supporting portion 131 of the lifting rod 130 with the second matching portion 420 .

[0094] like Fig.28 In the first embodiment, the support portion 131 can be aligned with the second matching portion 420 by controlling the rotation angle of the lifting rod 130. Since the included angle of the three second matching portions 420 is 120 degrees, the support portion 131 can be aligned with the middle point of two adjacent second matching portions 420 in step S11, and then the lifting rod 130 can be rotated 60 degrees in step S14 to align the support portion 131 with the second matching portion 420.

[0095] In some embodiments, in order to realize that the lifting rod 130 drives the center tray 110 and / or the outer supporting ring 120 to rotate, a limiting groove is usually provided at the bottom of the center tray 110 and / or the outer supporting ring 120. It should be understood that the limiting groove is provided on the bottom surface of the non-first matching portion of the second area 310 of the center tray 110 or the bottom surface of the second matching portion 420, and the support portion 131 penetrates into the limiting groove. It can be understood that in order to allow the lifting rod 130 to penetrate into the limiting groove located at the second matching portion 420 and the limiting groove located at the center tray 110 respectively after rotating a certain angle, the limiting groove located at the second matching portion 420 and the limiting groove located at the center tray 110 are located on the same circumference. For this arrangement, step S14 includes: lowering and rotating the lifting rod 130, aligning the support portion 131 of the lifting rod 130 with the second matching portion 420, and then raising the lifting rod 130 so that the support portion 131 penetrates into the aforementioned limiting groove located at the second matching portion 420.

[0096] Step S15: the lifting rod 130 is controlled to rise, and the supporting portion 131 drives the outer supporting ring 120 and the center tray 110 to rise to the process position at the same time by pushing the second matching portion 420 .

[0097] like Fig.29 As shown, the lifting rod 130 rises in the direction indicated by the arrow, driving the center tray 110 and the outer support ring 120 at the same time. Fig.30 The current position of the substrate W shown is the process position. During the process, the lifting pins 130 can drive the central tray 110 and the outer support ring 120 to rotate together.

[0098] In some embodiments, after step S15, a process is performed on the substrate W. After the process is completed, the method may further include:

[0099] Step S16 : Control the lifting rod 130 to descend to a first height, the outer support ring 120 is supported by its supporting structure (not shown), and the supporting portion 131 descends, rotates, and ascends to support the center tray 110 .

[0100] Step S17 : controlling the lifting rod 130 to rise to the wafer taking height, and the substrate W is unloaded by the robot arm 510 .

[0101] Then, step S12 and subsequent steps may be continued to implement a continuous process.

[0102] Through the above-mentioned embodiment 1, the split-design center tray 110 and the outer support ring 120 are adopted, and the method of using the lifting pin to align with the through hole on the base in the prior art is eliminated, which avoids the problem of adhesion between the base and the lifting pin, which is conducive to improving the yield of substrate processing and ensuring the film quality. In addition, the alignment method of aligning the second matching part 420 by controlling the support part 131 of the lifting rod 130 has a large error tolerance, is easy to operate, easy to implement, saves time, and can also improve the working efficiency of the base.

[0103] Fig.17 It is a schematic top view of the center tray in the split base of the second embodiment of the present application. Fig.18 1 is a bottom view of the outer support ring in the split base of the second embodiment of the present application. Fig.17 and Fig.18 As shown, in the second embodiment, the center tray 110 includes a first area 210 and a second area 310, the second area 310 is arranged around the periphery of the first area 210, and has three first matching parts in the second area 310, which are specifically three second protrusions 610 protruding toward the outer support ring 120, the outer support ring 120 has a second upper surface and a second lower surface 124, and the outer support ring 120 includes a second matching part. The second matching part includes a second recessed part 620 recessed upward from the second lower surface 124. Similar to the first recessed part 411, the second recessed part 620 is also a groove with a certain depth, which does not penetrate the outer support ring 120 in the thickness direction.

[0104] Fig.19 The first matching state of the center tray 110 and the outer support ring 120 of the second embodiment is shown, and Fig.19 is along Fig.18. When the center tray 110 and the outer support ring 120 are in the first mating state, the second protrusion 610 is located in the second recess 620, and the second protrusion 610 is located below the second recess 620. At this time, the first projection S1 of the first mating portion is the projection of the second protrusion 610, and the second projection S2 of the second mating portion is the projection of the second recess 620, and S1 and S2 overlap. At this time, when the center tray 110 is lifted up, the outer support ring 120 will be driven to rise together.

[0105] refer to Fig.19 , the first upper surface 112 of the center tray 110 has different heights. Specifically, the height of the junction area 312 of the second area 310 close to the first area 210 is higher than the overall height of the first area 210, and the height of the second protrusion 610 is lower. The height of the second protrusion 610 can be higher or lower than the height of the first area 210. The various variations of the first upper surface 112 of the center tray 110 in the second embodiment are similar to those in the first embodiment, and can be combined with this embodiment without conflict, such as including a central protrusion, the junction area 312 can be a continuous table or a continuous convex surface, etc., and will not be further expanded.

[0106] When the substrate W is supported by the center tray 110, the substrate W is supported by the interface area 312 in the second area 210. Fig.19 In the first mating state shown, the outer support ring 120 is higher than the center tray 110, and the substrate W is carried by the outer support ring 120. The outer support ring 120 in the second embodiment has a similar embodiment to the first embodiment, and similarly, can be combined with the present embodiment without conflict, for example, also including the contact area, outer edge, protrusion, etc., which will not be expanded.

[0107] like Fig.18 , the inner edge 122 of the outer support ring 120 also includes a plurality of through grooves 630, and the through grooves 630 have a third projection S3 in the vertical direction. When the center tray 110 and the outer support ring 120 are in the second mating state, the first projection S1 and the second projection S2 do not overlap, and the first projection S1 is located in the third projection S3, and the second protrusion 610 is movably located in the through groove 630. It should be noted that the through groove 630 is a groove body with an opening at the inner edge 122, and penetrates the outer support ring 120 in the thickness direction. When the projection of the second protrusion 610 is located in the third projection S3, it means that the second protrusion 610 can pass through the through groove 630 and move freely up and down. Fig. 20 The second matching state of the center tray 110 and the outer support ring 120 of the second embodiment is shown, and Fig. 20 is along Fig.18At this time, the second protrusion 610 is located in the through groove 630 and can be lifted and lowered without obstacles.

[0108] The present application also proposes a film transmission method, which can be performed using the split base of the second embodiment. The method includes the following steps:

[0109] Step S21: Control the center tray 110 in the split base to rotate to a first angle, at which the center tray 110 can be independently raised and lowered relative to the outer support ring 120, wherein the split base includes a center tray 110 and an outer support ring 120 that are independently arranged, and the outer support ring 120 is arranged around the outer periphery of the center tray 110.

[0110] In step S21, for example, the central tray 110 can be rotated by the lifting rod 130 described above so that the central tray 110 and the outer support ring 120 are in a Fig. 20 The second mating state is shown.

[0111] Step S22 : Control the center tray 110 to rise to the film taking height, and the center tray 110 receives and carries the substrate W. This step can be performed by the lifting rod 130 lifting the center tray 110 . The conveying and placing of the substrate W are performed by the robot arm 510 .

[0112] Step S23: Control the center tray 110 to descend to a second height. At the second height, the substrate W is separated from the center tray 110 and is carried by the outer support ring 120. The substrate W contacts the outer support ring 120. The substrate W contacts a contact area 123 of the outer support ring 120. The contact area 123 is located between the outer edge and the inner edge of the outer support ring 120. The height of the contact position of the contact area 123 with the substrate W is higher than the height of the center tray 110.

[0113] Step S24: Control the center tray 110 to descend to a third height, and control the center tray 110 to rotate to a second angle at the third height, wherein the center tray 110 has a first matching portion, the outer support ring 120 has a second matching portion, the first matching portion has a first projection S1 in the vertical direction, and the second matching portion has a second projection S2 in the vertical direction, and at the second angle, the first projection S1 and the second projection S2 overlap. In this step, the third height is lower than the second height.

[0114] Step S25: Control the lifting rod 130 to rise, and the support portion 131 of the lifting rod 130 supports the bottom of the center tray 110, so that the first matching portion of the center tray 110 and the second matching portion of the outer support ring 120 contact each other. At this time, the center tray 110 can rise to the second height, and the center tray 110 and the outer support ring 120 are in the first matching state.

[0115] Step S26: Control the lifting rod 130 to continue to rise, and at the same time drive the outer support ring 120 and the center tray 110 to rise to the process position.

[0116] The substrate is deposited with a thin film at the process position. In some embodiments, during thin film deposition, the lifting pins 130 rotate to drive the outer support ring 120 and the center tray 110 to rotate.

[0117] After finishing the process, the method may further include:

[0118] Step S27: After the process is completed, the lifting pins 130 are controlled to descend to the aforementioned third height. At the third height, the center tray 110 is supported on the lifting pins 130, and the outer support ring 120 is supported at the second height by its supporting structure (not shown in the figure), and the substrate W after deposition is supported on the outer support ring 120.

[0119] Step S28: Control the lifting rod 130 to rotate to a first angle. At the first angle, the center tray 110 can be independently lifted and lowered relative to the outer support ring 120.

[0120] Step S29: Control the lifting rod 130 to rise to the film taking height. During the rising process of the lifting rod 130, the processed substrate W is supported on the central tray 110. Then, the processed substrate W is taken away. For example, the substrate is taken away by the robot arm 510. Then, step S22 and subsequent steps can be continued to realize a continuous process.

[0121] According to the split base of the second embodiment, the steps for processing the substrate W are slightly different, but the effects of the two are similar and will not be described in detail.

[0122] In order to improve the yield and film quality, the split base of the present application also has some through holes arranged in the central tray 110 and / or the outer supporting ring 120 . Fig.21 and Fig. 22, a schematic diagram of setting through holes on the center tray 120 is shown, and a plurality of through holes 212 for ventilation are set in the center tray 110. The through holes 212 penetrate the center tray 110 in the vertical direction (in other words: in the direction perpendicular to the lower surface of the base) or penetrate the center tray 110 in a direction at a certain angle to the vertical direction. The distribution of the through holes 212 is affected by the following principle: along the extension direction of the ray colinear with the radius of the center tray 110, the ventilation volume per unit area gradually decreases. In the illustrated embodiment, the through holes 212 can be set in both the first area 210 and the second area 310. In some embodiments, the through holes 212 can be set only in the first area 210. Through the through holes 212, the back of the substrate W can be purged during the film formation process to reduce the by-products on the back of the substrate W or the surface of the center tray 110. There can be many ways to distribute the through holes 212, which can be determined by the pressure on the upper and lower sides of the through holes and the simulation results. The inventors of the present application have discovered that the best purging effect can be achieved if the total ventilation volume per unit area per unit time is gradually reduced from the inside to the outside.

[0123] Fig.21 and Fig. 22 These are just two examples. Fig.21 , the through holes 212 located in the first area 210 have a larger area, and the through holes 212 located in the second area 310 have a smaller area, so that the ventilation volume inside the center tray 110 is large and the ventilation volume at the edge is small. Fig. 22 , all the through holes 212 have the same cross-sectional size, but the density of the through holes 212 inside the first area 210 is large, and the density of the through holes 212 in the second area 310 is small, which can also achieve the effect of gradually decreasing the total ventilation volume per unit area per unit time from the inside to the outside. In addition, the provision of through holes is also conducive to preventing the substrate W from slipping when it is carried by the central tray 110 or the outer support ring 120.

[0124] In some embodiments, some through holes are also provided on the outer support ring 120 (not shown). Accordingly, the distribution of the through holes on the outer support ring 120 is also affected by the above principles, and its technical effect is the same as that of the through holes in the center tray 110 .

[0125] In some embodiments, the through hole vertically penetrates the center tray 110 and the outer support ring 120. In other embodiments, the through hole may also be an oblique hole, that is, not a vertical through hole.

[0126] Fig.23 FIG. 4 shows a top view of the center tray 110 and the outer support ring 120 in a first mating state in some embodiments. Fig.23 The first upper surface of the center tray 110 includes a plurality of first grooves 213 extending in the radial direction, and the second upper surface of the outer support ring 120 may also be provided with a plurality of second grooves 214 extending in the radial direction. Fig.234 first grooves 213 extending radially outward from the center of the circle are shown in the figure. The present application does not limit the number of the first grooves 213. It should be noted that the first grooves 213 are grooves that are recessed downward from the first upper surface 112 of the center tray 110, and do not penetrate the center tray 110 in thickness. Similarly, the second grooves 214 are also grooves that are recessed downward from the second upper surface of the outer support ring 120, and do not penetrate the outer support ring 120. These first grooves 213 and second grooves 214 form a gas channel, and multiple first grooves 213 and second grooves 214 can be connected to each other. Fig.23 The second groove 214 corresponds to the first groove 213, forming a continuous groove.

[0127] In some embodiments, the end of the second groove 214 is located in the contact area 123. Assuming that the substrate W contacts the outer support ring 120 at position P in the contact area 123, the end of the second groove 214 in the contact area 123 is outside the position P, that is, it exceeds the edge of the substrate W. This is conducive to the timely discharge of the gas between the substrate W and the base from the edge of the substrate W to the outside through the first groove 213 and the second groove 214.

[0128] In some embodiments, the second groove 214 has a first end and a second end, wherein the first end can be located in an area of ​​the outer support ring 120 close to the center support ring 110, for example, at the lowest position of the contact area 123, or at the inner edge 122 of the outer support ring, or at any position between the inner edge 122 of the outer support ring and the lowest position of the contact area 123; and the second end is located in an area of ​​the outer support ring 120 away from the center support ring 110, for example, outside the position P where the substrate W contacts the contact area 123.

[0129] When the substrate W is carried, there is a certain amount of gas between the center tray 110 and the substrate W. If the gas does not escape in time, the substrate W is likely to slide sideways. By providing the first groove 213 and the second groove 214, the gas can escape in time, thereby further preventing the substrate W from sliding. In addition, providing the first groove 213 and the second groove 214 is also conducive to reducing the weight of the base and improving the temperature increase and decrease speed.

[0130] In other embodiments, the first upper surface of the center tray 110 includes a plurality of first ridges extending in the radial direction (not shown), and the second upper surface of the outer support ring 120 includes a plurality of second ridges extending in the radial direction (not shown). Fig.23, the first groove 213 is changed into a first convex ridge protruding upward, and the second groove 214 is changed into a second convex ridge protruding upward, so that gas channels are formed between adjacent first convex ridges and between adjacent second convex ridges. The second convex ridges and the first convex ridges may correspond to each other to form continuous convex ridges, or may not correspond to each other, and the gas channels formed between the first convex ridges and the gas channels formed between the second convex ridges may be fluidically connected to each other.

[0131] In some embodiments, a plurality of second ridges extending in the radial direction may be provided only on the second upper surface of the outer support ring 120 .

[0132] In some embodiments, the end of the second ridge is located in the contact area 123. Assuming that the substrate W contacts the outer support ring 120 at position P in the contact area 123, the outer end of the second ridge is outside the position P, that is, it exceeds the edge of the substrate W. This is conducive to the timely discharge of the gas between the substrate W and the base from the outside of the edge of the substrate W through the first ridge and the second ridge (or only through the second ridge).

[0133] In some embodiments, the second ridge has a first end and a second end, wherein the first end is located on the inner side of position P, for example, at the lowest position of the contact area 123, or at the inner edge 122 of the outer support ring, or at any position between the inner edge 122 of the outer support ring and the lowest position of the contact area 123; the second end is located on the outer side of position P.

[0134] Further, when viewed from the center of the base to the edge of the base, the heights of the first ridges and the second ridges generally increase gradually. In addition, in order to support the center position of the substrate W, a protruding component may be provided at the center of the center tray 110, that is, at the intersection of the plurality of first ridges. The height of the protruding component is less than or equal to the height of the outermost side of the first ridges.

[0135] According to the above embodiments, the present application provides through holes in both the center tray 110 and the outer support ring 120, or respectively provides a first groove 213 and a second groove 214, or respectively provides a first ridge and a second ridge, which is beneficial to achieving a thicker film layer, resistivity control, and reducing edge defects.

[0136] In some embodiments, the distance between the outermost side of the second convex ridge and the center of the base is greater than the radius of the substrate W, so that the inclined upper surface of the second convex ridge can center the substrate W.

[0137] The basic concepts have been described above. Obviously, for those skilled in the art, the above application disclosure is only an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.

[0138] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0139] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0140] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in this application are approximate values, which may change according to the required characteristics of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining the digits. Although the numerical domains and parameters used to confirm the breadth of the range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

Claims

1. A split base for supporting a substrate, It is characterized in that It comprises a central tray and an outer support ring which are independently arranged, wherein the outer support ring is arranged around the outer periphery of the central tray, wherein: The central tray includes a first area and a second area, the second area is arranged around the periphery of the first area, and the second area includes a plurality of first matching portions; A contact area is provided between the outer edge and the inner edge of the outer support ring, and the contact area is used to contact the substrate when carrying the substrate. The height of the contact position of the contact area in contact with the substrate W is higher than the height of the center tray. The inner edge of the outer support ring is provided with a plurality of second matching parts; The first matching portion has a first projection in the vertical direction, and the second matching portion has a second projection in the vertical direction. When the center tray and the outer support ring are in a first matching state, the first matching portion and the second matching portion contact each other, and the first projection and the second projection overlap.

2. The split base according to claim 1, It is characterized in that The center tray includes a first upper surface and a first lower surface. When carrying a substrate, the first upper surface faces the substrate, the first matching portion includes a first recessed portion recessed upward from the first lower surface, and the second matching portion includes a first protruding portion extending toward the center tray. When the center tray and the outer support ring are in a first matching state, the first protruding portion is located in the first recessed portion, and the first protruding portion is located below the first recessed portion.

3. The split base according to claim 1, It is characterized in that The first mating portion includes a second protrusion protruding toward the outer support ring, the outer support ring includes a second upper surface and a second lower surface, the second mating portion includes a second recessed portion recessed upward from the second lower surface, when the center tray and the outer support ring are in a first mating state, the second protrusion is located in the second recessed portion, and the second protrusion is located below the second recessed portion; the inner edge of the outer support ring also includes a plurality of through grooves, the through grooves have a third projection in the vertical direction, when the center tray and the outer support ring are in a second mating state, the first projection and the second projection do not overlap, and the first projection is located in the third projection, and the second protrusion can move in the vertical direction in the through groove.

4. The split base according to claim 2 or 3, It is characterized in that The height of the first region is lower than that of the second region.

5. The split base as claimed in claim 4, It is characterized in that The second region includes a flat continuous table surface, and the continuous table surface includes a plane that is continuous along the circumference of the center tray.

6. The split base as claimed in claim 5, It is characterized in that The continuous table surface also includes a first transition surface and a second transition surface; The first transition surface extends from the inner periphery of the plane to the first region; The second transition surface extends from the outer periphery of the plane to the outer edge of the center tray; the angle between the first transition surface and the plane is 1-45°, and / or the angle between the second transition surface and the plane is 1-45°.

7. The split base according to claim 4, It is characterized in that The second area includes a continuous convex surface that is convex upward and continuous along the circumference of the center tray.

8. The split base according to claim 1, It is characterized in that The second region includes a plurality of grooves that are staggered with each other.

9. The split base according to claim 1, It is characterized in that The central tray and / or the outer support ring comprises a plurality of through holes.

10. The split base according to claim 9, It is characterized in that The distribution of the through holes is influenced by the following principle: along the extension direction of the ray collinear with the radius of the central tray, the ventilation volume per unit area gradually decreases.

11. The split base according to claim 1, It is characterized in that The contact area is an inclined surface which is continuous along the circumference of the outer support ring; or the contact area includes a stepped structure with a plurality of steps; or the contact area includes a plurality of grooves.

12. The split base according to claim 1, It is characterized in that The contact area is provided with a plurality of support columns, and the plurality of support columns are arranged at intervals along the circumference of the outer support ring. When the outer support ring carries a substrate, the substrate contacts the plurality of support columns.

13. The split base according to claim 1, It is characterized in that The second upper surface of the outer support ring includes a plurality of second ridges extending in the radial direction.

14. The split base according to claim 13, It is characterized in that The first upper surface of the center tray includes a plurality of first ridges extending in the radial direction.

15. The split base according to claim 1, It is characterized in that The first upper surface of the center tray includes a plurality of first grooves extending in the radial direction, and the second upper surface of the outer support ring includes a plurality of second grooves extending in the radial direction.

16. A method for transmitting a film, It is characterized in that include: Step S11: Control the center tray and the outer support ring in the split base to be in a first mating state, wherein the split base comprises a center tray and an outer support ring that are independently arranged, the outer support ring is arranged around the outer periphery of the center tray, the center tray has a first mating portion, the outer support ring has a second mating portion, the first mating portion has a first projection in the vertical direction, and the second mating portion has a second projection in the vertical direction, when the center tray and the outer support ring are in the first mating state, the first projection and the second projection overlap, and the first mating portion is located above the second mating portion; Step S12: controlling the central tray to rise to a wafer taking height, and the central tray receives and carries the substrate; Step S13: controlling the center tray to descend to a first height, at which the substrate is separated from the center tray and carried by the outer support ring, the substrate contacts the outer support ring, and the center tray and the outer support ring are in a first mating state, wherein the substrate contacts a contact area of ​​the outer support ring, the contact area is located between an outer edge and an inner edge of the outer support ring, and a height of a contact position of the contact area in contact with the substrate W is higher than a height of the center tray; Step S14: rotating the lifting rod so that the supporting portion of the lifting rod is aligned with the second matching portion; Step S15: controlling the lifting rod to rise, and the supporting part drives the outer supporting ring and the center tray to rise to the process position at the same time by pushing the second matching part.

17. A method for transmitting a film, It is characterized in that include: Step S21: controlling the center tray in the split base to rotate to a first angle, at which the center tray can be independently lifted and lowered relative to the outer support ring, wherein the split base comprises a center tray and an outer support ring that are independently arranged, and the outer support ring is arranged around the outer periphery of the center tray; Step S22: Control the central tray to a wafer taking height, and the central tray receives and carries the substrate; Step S23: controlling the center tray to descend to a second height, at which the substrate is separated from the center tray and carried by the outer support ring, and the substrate contacts the outer support ring, wherein the substrate contacts a contact area of ​​the outer support ring, the contact area is located between the outer edge and the inner edge of the outer support ring, and the height of the contact position of the contact area in contact with the substrate W is higher than the height of the center tray; Step S24: controlling the center tray to descend to a third height, and controlling the center tray to rotate to a second angle at the third height, wherein the center tray has a first matching portion, the outer support ring has a second matching portion, the first matching portion has a first projection in the vertical direction, and the second matching portion has a second projection in the vertical direction, and at this time, the first projection and the second projection overlap; Step S25: controlling the lifting rod to rise, and the supporting portion of the lifting rod supports the bottom of the center tray, so that the first matching portion and the second matching portion contact each other; Step S26: Control the lifting rod to continue to rise, and at the same time drive the outer support ring and the center tray to rise to the process position.

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