Hole line connection structure and preparation method thereof, semiconductor device and electronic equipment
By forming and bonding the monomer connection component, the problem of holes and wire connection structures being prone to holes and residues under large line width/depth ratio is solved, and the heat dissipation and reliability of the device are improved.
Patent Information
- Application Number
- CN202510272100.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-07
- Publication Date
- 2025-06-06
AI Technical Summary
The existing hole-line connection structure performs well with small line width and small depth-to-face ratio, but with the increase of line width/depth-to-face ratio, holes and residual defects are prone to occur, affecting the heat dissipation and reliability of the device.
By forming at least two monomer connection components, each component including a dielectric frame and a conductive structure, the surface of the dielectric frame has a bonding structure, and the monomer connection components are bonded together using 3D printing technology or other manufacturing methods to form a pore-line connection structure.
This method avoids holes and residual defects in the conductive structure, improves the heat dissipation and reliability of the device, and meets the IC wiring requirements and electrical requirements.
Smart Images
Figure CN120109088A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a via-line connection structure and a preparation method thereof, a semiconductor device and an electronic device. Background Art
[0002] With the continuous development of the semiconductor industry, the process nodes are constantly shrinking. The traditional AL process of BEOL (Back end of line) can no longer meet the performance requirements of chips, and the Cu process has been discovered and widely used. AL can produce volatile substances during the etching process, so a pattern can be formed in one step of photolithography, but Cu cannot produce volatile substances during the etching process, so the process route of the AL process cannot be used. For this reason, the Damascus process suitable for the Cu process was developed and is still used today. Its main feature is to first form a pattern groove by etching the dielectric layer, then fill the groove with Cu by electroplating, and finally remove the excess Cu outside the groove by chemical mechanical polishing.
[0003] The Damascus process used in the above-mentioned Cu process has good performance when the line width (for example, within 200nm) / small aspect ratio (for example, within 1:5) is small. As the line width / aspect ratio increases, the Cu filling process is greatly affected by the process, and it is easy to have defects such as extra holes and residues, thereby affecting the device's heat dissipation, reliability and other physical properties. At the same time, the Damascus process requires the formation of a dielectric layer before Cu filling. The dielectric layer is generally formed by a deposition process. The deposition process cannot control the porosity in the dielectric layer, and the porosity in the dielectric layer is related to the parasitic capacitance of the device, so the parasitic capacitance of the device cannot be controlled. Summary of the invention
[0004] The purpose of the present application is to provide a via-wire connection structure and a preparation method thereof, a semiconductor device and an electronic device, so as to solve the problems of low performance, heat dissipation and reliability of the existing via-wire connection structure.
[0005] In order to achieve the above object, the present application provides a method for preparing a hole-line connection structure, comprising:
[0006] forming at least two monomer connection components, the monomer connection components comprising a dielectric skeleton and a conductive structure, the conductive structure being located within the dielectric skeleton and / or on a surface of the dielectric skeleton, at least one surface of the dielectric skeleton having a bonding structure; and,
[0007] The monomer connection components are bonded together by the bonding structure.
[0008] Optionally, the monomer connection component is formed by 3D printing technology.
[0009] Optionally, the step of forming the monomer connection assembly includes:
[0010] forming the dielectric skeleton;
[0011] Etching the dielectric skeleton to form a hole-groove structure, wherein the hole-groove structure is located inside the dielectric skeleton and / or on the surface of the dielectric skeleton;
[0012] forming the bonding structure on at least one surface of the dielectric skeleton; and,
[0013] The conductive structure is formed in the hole structure.
[0014] Optionally, the dielectric skeleton is formed by 3D printing, cold pressing or injection molding.
[0015] Optionally, the step of forming the monomer connection assembly includes:
[0016] The dielectric skeleton and the hole-groove structure are formed by 3D printing technology, wherein the hole-groove structure is located inside the dielectric skeleton and / or on the surface of the dielectric skeleton;
[0017] forming the bonding structure on at least one surface of the dielectric skeleton; and,
[0018] The conductive structure is formed in the hole structure.
[0019] Optionally, when forming the dielectric skeleton, water-soluble particles are added to the preparation material of the dielectric skeleton; and,
[0020] After forming the monomer connection assembly, the monomer connection assembly is immersed in an aqueous solution to remove water-soluble particles in the dielectric skeleton and form pores in the dielectric skeleton.
[0021] Optionally, the step of forming the dielectric skeleton comprises:
[0022] Forming a silicon crystal structure;
[0023] The silicon crystal structure is sintered in an oxygen-containing gas to form the dielectric skeleton.
[0024] Optionally, the step of forming the conductive structure in the hole structure includes:
[0025] Immersing the dielectric skeleton in a liquid conductor, the liquid conductor filling the hole and slot structure; and,
[0026] The liquid conductor in the hole structure is shaped to form the conductive structure.
[0027] Optionally, magnetic metal particles are added into the liquid conductor.
[0028] Optionally, the magnetic metal particles include at least one of Fe, Co and Ni.
[0029] Optionally, the material of the conductive structure includes Cu or Al; and / or the bonding structure is a bonding groove or a bonding protrusion, and the bonding groove and the bonding protrusion bonded together match each other.
[0030] Optionally, the bonding structure is formed by deposition and etching processes.
[0031] The present application also provides a hole-line connection structure, comprising at least two monomer connection components, wherein the monomer connection components include a dielectric skeleton and a conductive structure, wherein the conductive structure is located inside the dielectric skeleton and / or on the surface of the dielectric skeleton, and at least one surface of the dielectric skeleton has a bonding structure, and the monomer connection components are bonded together through the bonding structure.
[0032] Optionally, the dielectric skeleton has pores; and / or the conductive structure has magnetic metal particles.
[0033] Optionally, the magnetic metal particles include at least one of Fe, Co and Ni.
[0034] Optionally, the material of the conductive structure includes Cu or Al; and / or the bonding structure is a bonding groove or a bonding protrusion, and the bonding groove and the bonding protrusion bonded together match each other.
[0035] The present application also provides a semiconductor device, comprising the via line connection structure.
[0036] The present application also provides an electronic device, comprising the semiconductor device.
[0037] In the hole-line connection structure and its preparation method, semiconductor device and electronic device provided in the present application, the preparation method includes forming at least two monomer connection components, the monomer connection components include a dielectric skeleton and a conductive structure, the conductive structure is located in the dielectric skeleton and / or on the surface of the dielectric skeleton, and at least one surface of the dielectric skeleton has a bonding structure; the monomer connection components are bonded together through the bonding structure. The present application uses advanced micro-nano manufacturing assembly technology to form the monomer connection components and assemble the monomer connection components into a hole-line connection structure, avoiding defects such as extra holes and hillocks in the conductive structure, and improving the physical properties of the device such as heat dissipation and reliability. BRIEF DESCRIPTION OF THE DRAWINGS
[0038] Figure 1 A flow chart of a method for preparing a hole-line connection structure provided in an embodiment of the present application;
[0039] Figure 2 A schematic diagram of the structure of a monomer connection assembly provided in an embodiment of the present application;
[0040] Figure 3 A schematic diagram of the structure of a dielectric skeleton provided in an embodiment of the present application;
[0041] Wherein, the accompanying drawings are marked as follows:
[0042] 100 - monomer connection component; 101 - dielectric skeleton; 102 - conductive structure; 103 - bonding groove; 104 - bonding protrusion. DETAILED DESCRIPTION
[0043] The specific implementation of the present application will be described in more detail below in conjunction with the schematic diagram. Based on the following description, the advantages and features of the present application will become clearer. It should be noted that the drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present application.
[0044] Figure 1 Flow chart of the method for preparing the hole line connection structure provided in this embodiment. Figure 1 As shown, the method for preparing the hole line connection structure includes step S100 and step S200.
[0045] Figure 2 This is a schematic diagram of the structure of the monomer connection assembly 100 provided in this embodiment. Figure 3 FIG. 1 is a schematic diagram of the structure of the conductive structure 102 provided in this embodiment. Figure 2 and Figure 3 As shown, step S100 is first performed to form at least two monomer connection components 100. The monomer connection components 100 include a dielectric skeleton 101 and a conductive structure 102. The conductive structure 102 is located inside the dielectric skeleton 101 and / or on the surface of the dielectric skeleton 101. At least one surface of the dielectric skeleton 101 has a bonding structure.
[0046] Please continue reading Figure 2 The dielectric skeleton 101 is a three-dimensional block structure, and its material can be a dielectric material, such as silicon oxide, silicon nitride, silicon oxynitride or metal oxide. The dielectric skeleton 101 can have pores, and the pores in the dielectric skeleton 101 can control the parasitic capacitance of the hole-line connection structure, and further control the parasitic capacitance of the semiconductor device formed by the hole-line connection structure.
[0047] Please continue reading Figure 3The conductive structure 102 can be composed of interconnected structures such as metal wires, plugs, and pads. The metal wires, plugs, and pads can be interconnected or independent of each other. The shapes, distribution methods, and sizes of the metal wires, plugs, and pads can be designed according to actual conditions, and examples will not be given here one by one.
[0048] Furthermore, the conductive structure 102 may be located inside the dielectric skeleton 101 or on the surface of the dielectric skeleton 101 , or partly located inside the dielectric skeleton 101 and another partly located on the surface of the dielectric skeleton 101 , which is not limited in the present application.
[0049] Optionally, the material of the conductive structure 102 may include metal materials such as Cu or Al.
[0050] In this embodiment, the conductive structure 102 may have magnetic metal particles, and the magnetic metal particles may be at least one of Fe, Co and Ni. Adding magnetic metal particles to the conductive structure 102 may achieve some specific functions, for example, using Fe particles to offset the magnetic field induced when the device is working, thereby achieving electromagnetic shielding.
[0051] At least one surface of the dielectric skeleton 101 has a bonding structure, and the bonding structure can be a bonding groove 103 or a bonding protrusion 104. That is, at least one surface of the dielectric skeleton 101 can have a bonding groove 103 or a bonding protrusion 104. The two monomer connection components 100 can be bonded together by using the bonding groove 103 and the bonding protrusion 104.
[0052] Furthermore, the steps of forming the monomer connection assembly 100 may be as follows:
[0053] First, the dielectric skeleton 101 can be formed by 3D printing, cold pressing, or injection molding. In this embodiment, the material of the dielectric skeleton 101 is silicon oxide, and a silicon crystal structure (single crystal or polycrystalline structure) can be formed by 3D printing, cold pressing, or injection molding. Then, the silicon crystal structure is sintered / densified in an oxygen-containing gas to oxidize the silicon crystal structure to form a dielectric skeleton 101 of silicon oxide. In some embodiments, the dielectric skeleton 101 of silicon oxide or other materials can also be directly formed by 3D printing, cold pressing, or injection molding, thereby omitting the sintering process.
[0054] Next, the dielectric skeleton 101 is etched to form a hole-groove structure, which is located inside the dielectric skeleton 101 and / or on the surface of the dielectric skeleton 101. The shape and size of the hole-groove structure are the same as the shape and size of the conductive structure 102 to be formed. The process of etching the dielectric skeleton 101 can be a dry etching process, a wet etching process, or a combination of a dry etching process and a wet etching process. The hole-groove structure is a hollow area formed by etching away a part of the inside of the dielectric skeleton 101 and / or the surface of the dielectric skeleton 101. It can be composed of holes and grooves, etc. The holes and grooves can be interconnected or independent of each other. In some dielectric skeletons 101, the hole-groove structure can be a mesh structure. The shape, distribution method, size, etc. of the holes and grooves can be designed according to actual conditions, and examples are not given here one by one.
[0055] Afterwards, a bonding structure can be formed on at least one surface of the dielectric skeleton 101 through deposition and etching processes. It should be noted that the surfaces of the dielectric skeleton 101 on which the bonding structure is formed and the parameters such as the shape and size of the bonding structure should be pre-designed to facilitate assembly with other monomer connection components 100.
[0056] Afterwards, a conductive structure 102 may be formed in the hole-slot structure. In one embodiment, the dielectric skeleton 101 may be immersed in a liquid conductor, which may be a molten metal. At room temperature and pressure or at high temperature and high pressure, the liquid conductor enters the hole-slot structure to fill the hole-slot structure. The liquid conductor in the hole-slot structure is then cooled and annealed to form the conductive structure 102. The morphology of the conductive structure 102 matches that of the hole-slot structure. For example, when the hole-slot structure is a mesh structure, the conductive structure 102 is also a mesh structure.
[0057] In this embodiment, magnetic metal particles are added to the liquid conductor, and the magnetic metal particles include at least one of Fe, Co and Ni. Thus, after the conductive structure 102 is formed, the conductive structure 102 also contains magnetic metal particles.
[0058] Further, in this embodiment, when the dielectric skeleton 101 (or silicon crystal structure) is formed by a process such as 3D printing, cold pressing process or injection molding process, water-soluble particles can be added to the preparation material of the dielectric skeleton 101. After the monomer connection component 100 is formed, the monomer connection component 100 can be immersed in an aqueous solution to remove the water-soluble particles in the dielectric skeleton 101 and form pores in the dielectric skeleton 101. It is conceivable that the porosity of the dielectric skeleton 101 can be controlled by controlling the amount of water-soluble particles added to the preparation material of the dielectric skeleton 101, thereby controlling the parasitic capacitance of the device.
[0059] In some embodiments, the monomer connection component 100 can also be directly formed by 3D printing technology, that is, the dielectric skeleton 101 and the conductive structure 102 are directly and synchronously printed by 3D printing technology, which is simple and efficient.
[0060] In some embodiments, the dielectric skeleton 101 and the hole-groove structure can also be directly formed by 3D printing technology, and the hole-groove structure is located inside the dielectric skeleton 101 and / or on the surface of the dielectric skeleton 101. In this case, the step of etching the dielectric skeleton 101 can be omitted to simplify the process. Afterwards, a bonding structure can be formed on at least one surface of the dielectric skeleton 101, and a conductive structure 102 can be formed in the hole-groove structure.
[0061] Step S200 is performed to bond the monomer connection components 100 together through the bonding structure, thereby assembling into a hole-line connection structure that meets IC wiring requirements and electrical requirements. It should be noted that the bonding grooves 103 and bonding protrusions 104 bonded together need to match each other.
[0062] Based on this, Figure 2 and Figure 3 As shown, this embodiment also provides a hole-line connection structure, including at least two monomer connection components 100, the monomer connection component 100 includes a dielectric skeleton 101 and a conductive structure 102, the conductive structure 102 is located inside the dielectric skeleton 101 and / or on the surface of the dielectric skeleton 101, at least one surface of the dielectric skeleton 101 has a bonding structure, and the monomer connection components 100 are bonded together through the bonding structure.
[0063] Specifically, the dielectric skeleton 101 is a three-dimensional block structure, and its material can be a dielectric material, such as silicon oxide, silicon nitride, silicon oxynitride or metal oxide, etc. The dielectric skeleton 101 can have pores, and the pores in the dielectric skeleton 101 can control the parasitic capacitance of the hole-line connection structure, and further control the parasitic capacitance of the semiconductor device formed by the hole-line connection structure.
[0064] The conductive structure 102 can be composed of interconnected structures such as metal wires, plugs, and pads. The metal wires, plugs, and pads can be interconnected or independent of each other. The shapes, distribution methods, and sizes of the metal wires, plugs, and pads can be designed according to actual conditions, and examples will not be given one by one here.
[0065] Furthermore, the conductive structure 102 may be located inside the dielectric skeleton 101 or on the surface of the dielectric skeleton 101 , or partly located inside the dielectric skeleton 101 and another partly located on the surface of the dielectric skeleton 101 , which is not limited in the present application.
[0066] Optionally, the material of the conductive structure 102 may include metal materials such as Cu or Al.
[0067] In this embodiment, the conductive structure 102 may have magnetic metal particles, and the magnetic metal particles may be at least one of Fe, Co and Ni. Adding magnetic metal particles to the conductive structure 102 may achieve some specific functions, for example, using Fe particles to offset the magnetic field induced when the device is working, thereby achieving electromagnetic shielding.
[0068] At least one surface of the dielectric skeleton 101 has a bonding structure, and the bonding structure can be a bonding groove 103 or a bonding protrusion 104. That is, at least one surface of the dielectric skeleton 101 can have a bonding groove 103 or a bonding protrusion 104. The two monomer connection components 100 can be bonded together by using the bonding groove 103 and the bonding protrusion 104.
[0069] Correspondingly, this embodiment further provides a semiconductor device, including the above-mentioned via line connection structure.
[0070] Accordingly, the present embodiment further provides an electronic device, which may include the semiconductor device of the present embodiment. The electronic device may include a circuit board and an integrated circuit coupled to the circuit board, and the integrated circuit may be arranged on the circuit board. The integrated circuit may exist in the form of a memory, a processor, etc. Exemplarily, the electronic device of the present embodiment may include various devices with computing functions, such as mobile phones, tablet computers, televisions, desktop computers, laptop computers, handheld computers, notebook computers, ultra-mobile personal computers (ultra-mobile personal computers, UMPC), netbooks, and cellular phones, personal digital assistants (personal digital assistants, PDAs), augmented reality (augmented reality, AR) devices, virtual reality (virtual reality, VR) devices, artificial intelligence (artificial intelligence, AI) devices, smart wearable devices (e.g., smart watches, smart bracelets), vehicle-mounted devices, smart home devices and / or smart city devices. The present embodiment does not impose any special restrictions on the specific type of the electronic device.
[0071] In summary, in the hole-line connection structure and its preparation method, semiconductor device and electronic device provided in the embodiments of the present application, the preparation method includes forming at least two monomer connection components 100, the monomer connection component 100 includes a dielectric skeleton 101 and a conductive structure 102, the conductive structure 102 is located in the dielectric skeleton 101 and / or on the surface of the dielectric skeleton 101, and at least one surface of the dielectric skeleton 101 has a bonding structure; the monomer connection components 100 are bonded together through the bonding structure. The present application uses advanced micro-nano manufacturing assembly technology to form the monomer connection component 100 and assemble the monomer connection component 100 into a hole-line connection structure, avoiding defects such as extra holes and hillocks in the conductive structure 102, and improving the physical properties of the device such as heat dissipation and reliability.
[0072] It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referred to each other. For the system disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description.
[0073] It should also be noted that, although the present application has been disclosed as above with preferred embodiments, the above embodiments are not intended to limit the present application. For any technician familiar with the art, without departing from the scope of the technical solution of the present application, the technical content disclosed above can be used to make many possible changes and modifications to the technical solution of the present application, or modified into equivalent embodiments of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still falls within the scope of protection of the technical solution of the present application.
[0074] It should also be understood that, unless otherwise specified or indicated, the terms "first", "second", "third", etc. in the specification are merely used to distinguish between the various components, elements, steps, etc. in the specification, and are not used to indicate the logical relationship or sequential relationship between the various components, elements, steps, etc.
[0075] It should also be recognized that the terms described herein are only used to describe specific embodiments and are not used to limit the scope of the present application. It should be noted that the singular forms "one" and "a kind" used herein and in the appended claims include plural references unless the context clearly indicates the opposite meaning. For example, a reference to "a step" or "a device" means a reference to one or more steps or devices, and may include secondary steps and secondary devices. All conjunctions used should be understood in the broadest sense. And, the word "or" should be understood to have a definition of logical "or", rather than a definition of logical "exclusive or", unless the context clearly indicates the opposite meaning. In addition, the implementation of the method and / or device in the embodiment of the present application may include performing the selected task manually, automatically, or in combination.
Claims
1. A method for preparing a hole-line connection structure, characterized in that: include: forming at least two monomer connection components, the monomer connection components comprising a dielectric skeleton and a conductive structure, the conductive structure being located within the dielectric skeleton and / or on a surface of the dielectric skeleton, at least one surface of the dielectric skeleton having a bonding structure; and, The monomer connection components are bonded together by the bonding structure.
2. The method for preparing the hole-line connection structure according to claim 1, characterized in that: The monomer connection component is formed by 3D printing technology.
3. The method for preparing the hole-line connection structure according to claim 1, characterized in that: The steps of forming the monomer connection assembly include: forming the dielectric skeleton; Etching the dielectric skeleton to form a hole-groove structure, wherein the hole-groove structure is located inside the dielectric skeleton and / or on the surface of the dielectric skeleton; forming the bonding structure on at least one surface of the dielectric skeleton; and, The conductive structure is formed in the hole structure.
4. The method for preparing the hole-line connection structure according to claim 3, characterized in that: The dielectric skeleton is formed by 3D printing, cold pressing or injection molding.
5. The method for preparing a hole-line connection structure according to claim 1, characterized in that: The steps of forming the monomer connection assembly include: The dielectric skeleton and the hole-groove structure are formed by 3D printing technology, wherein the hole-groove structure is located inside the dielectric skeleton and / or on the surface of the dielectric skeleton; forming the bonding structure on at least one surface of the dielectric skeleton; and, The conductive structure is formed in the hole structure.
6. The method for preparing a hole-line connection structure according to any one of claims 2 to 5, characterized in that: When forming the dielectric skeleton, water-soluble particles are added to the preparation material of the dielectric skeleton; as well as, After forming the monomer connection assembly, the monomer connection assembly is immersed in an aqueous solution to remove water-soluble particles in the dielectric skeleton and form pores in the dielectric skeleton.
7. The method for preparing a hole-line connection structure according to any one of claims 3 to 5, characterized in that: The steps of forming the dielectric skeleton include: Forming a silicon crystal structure; The silicon crystal structure is sintered in an oxygen-containing gas to form the dielectric skeleton.
8. The method for preparing the hole-line connection structure according to claim 3 or 5, characterized in that: The step of forming the conductive structure in the hole structure comprises: Immersing the dielectric skeleton in a liquid conductor, the liquid conductor filling the hole and slot structure; and, The liquid conductor in the hole structure is shaped to form the conductive structure.
9. The method for preparing a hole-line connection structure according to claim 8, characterized in that: Magnetic metal particles are added into the liquid conductor.
10. The method for preparing a hole-line connection structure according to claim 9, characterized in that: The magnetic metal particles include at least one of Fe, Co and Ni.
11. The method for preparing a hole-line connection structure according to claim 1, characterized in that: The material of the conductive structure includes Cu or Al; and / or the bonding structure is a bonding groove or a bonding protrusion, and the bonding groove and the bonding protrusion bonded together match each other.
12. The method for preparing a hole-line connection structure according to claim 11, characterized in that: The bonding structure is formed by deposition and etching processes.
13. A hole line connection structure, characterized in that: It comprises at least two monomer connection components, wherein the monomer connection components comprise a dielectric skeleton and a conductive structure, wherein the conductive structure is located inside the dielectric skeleton and / or on the surface of the dielectric skeleton, and at least one surface of the dielectric skeleton has a bonding structure, and the monomer connection components are bonded together via the bonding structure.
14. The hole line connection structure according to claim 13, characterized in that: The dielectric skeleton has pores; and / or the conductive structure has magnetic metal particles.
15. The hole line connection structure according to claim 14, characterized in that: The magnetic metal particles include at least one of Fe, Co and Ni.
16. The hole line connection structure according to claim 13, characterized in that: The material of the conductive structure includes Cu or Al; and / or the bonding structure is a bonding groove or a bonding protrusion, and the bonding groove and the bonding protrusion bonded together match each other.
17. A semiconductor device, characterized in that: It comprises the hole line connection structure as described in any one of claims 13 to 16.
18. An electronic device, characterized in that: Comprising the semiconductor device as claimed in claim 17.