Dual-band power divider shared by microwaves and millimeter waves

Abstract

The invention discloses a dual-band power divider shared by microwaves and millimeter waves, which is characterized in that a pair of bent n-shaped microstrip lines is arranged between a pair of parallel grooves of a short-circuit substrate integrated waveguide and is connected with a pair of parallel microstrip lines bridging double resistors, and the microwave matching effect of the bent n-shaped microstrip lines and the stop-band effect of the millimeter wave band are utilized, so that the dual-band power divider is formed. The dual-band power divider shared by microwaves and millimeter waves is realized by combining the low-frequency cut-off effect of the substrate integrated waveguide and the isolation effect of the dual resistors in the frequency bands of the microwaves and the millimeter waves, has a relatively high frequency ratio of high and low frequency bands, is easy to adjust, and gives consideration to output port isolation, working bandwidth and overall size at the same time.

Description

Technical Field

[0001] The invention relates to a microwave device, in particular to a dual-band power divider shared by microwaves and millimeter waves. Background Art

[0002] Power dividers are used for power distribution and are indispensable components in wireless communication systems. With the development of wireless communication technology, especially in 5G and 6G communications, traditional power dividers no longer meet the system requirements of microwave and millimeter wave coexistence. Therefore, it is necessary to develop dual-band power dividers for microwave and millimeter wave coexistence. Dual-band power dividers for microwave and millimeter wave coexistence can meet the needs of the second to fourth generation mobile communications that mainly use microwave frequency bands, and can also meet the needs of large capacity and high speed of millimeter wave frequency bands in the 5G and 6G eras. In addition, the corresponding system for microwave and millimeter wave coexistence can reduce system complexity and cost. Therefore, dual-band power dividers for microwave and millimeter wave coexistence have important engineering and application value.

[0003] The existing dual-band power dividers can only work in the microwave frequency band due to the frequency ratio. There are three main implementation methods, namely, introducing a wave-limiting structure based on a wide-band power divider, introducing a phase-shifting structure based on a wide-band power divider, and using a dual-mode substrate integrated waveguide resonator. All three methods have the problem that the frequency ratio of the high and low frequency bands is low and difficult to adjust. There are also problems of large circuit size and narrow working bandwidth. Some designs also have the problem of poor output port isolation. Among them, the problem of low frequency ratio of the high and low frequency bands and difficulty in adjustment makes these design methods unable to realize a dual-band power divider shared by microwave millimeter waves. Therefore, it is necessary to propose a dual-band power divider shared by microwave millimeter waves, with a high and easy-to-adjust frequency ratio of the high and low frequency bands, while taking into account the overall size, output port isolation and working bandwidth. Summary of the invention

[0004] Purpose of the invention: In view of the above-mentioned prior art, a dual-band power divider shared by microwave and millimeter waves is proposed to achieve a higher high- and low-band frequency ratio and is easy to adjust, while taking into account the overall size, output port isolation and working bandwidth.

[0005] Technical solution: A dual-band power divider shared by microwave and millimeter waves, including a top metal layer, a first dielectric layer, an intermediate metal layer, a second dielectric layer, and a bottom metal layer stacked in sequence, and also including a plurality of metallized blind holes and resistors, and the overall structure is symmetrical about the central vertical plane; the top metal layer is combined with the first dielectric layer and the intermediate metal layer to form a sequentially connected input microstrip line, a pair of bent Π-shaped microstrip lines, a pair of parallel microstrip lines, and a pair of bent output microstrip lines; the intermediate metal layer, the second dielectric layer, the bottom metal, and the metallized blind holes form a substrate integrated waveguide with short circuits at both ends.

[0006] Furthermore, the top metal layer includes a metal strip 1, a pair of bent Π-shaped metal strips, a pair of metal strips 2 and a pair of bent metal strips connected in sequence from left to right.

[0007] Furthermore, the bent Π-shaped metal strip is composed of a main strip and two short strips, and the main strip is composed of a horizontal portion and bent portions with both ends facing the same side; the bent portions of the two symmetrically arranged bent Π-shaped metal strips are arranged opposite to each other, and the two short strips of each bent Π-shaped metal strip are symmetrically and vertically connected to the outside of the horizontal portion of the main strip.

[0008] Furthermore, the middle layer metal is a rectangular metal ground with a pair of parallel grooves, and the length direction of the grooves is perpendicular to the horizontal part of the main strip of the bent Π-shaped metal strip; the bottom layer metal is a rectangular metal ground; the metallized blind hole is used to connect the middle layer metal and the bottom layer metal, and forms a rectangular shape that encloses the parallel grooves.

[0009] Furthermore, in the vertical plane of the layer structure, the groove on the left is located on the left side of the right end of the first metal strip, and the groove on the right is located on the right side of the left end of the second metal strip.

[0010] Furthermore, it also includes a resistor 1 and a resistor 2 respectively connected across a pair of metal strips 2, and the two resistors are respectively located on both sides of the slot on the right side.

[0011] Furthermore, the main strip length of the bent Π-shaped metal strip is 0.19 λ g1 ~0.22 λ g1 The length of a single short strip is between 0.01 λ g1 ~0.04 λ g1 The spacing between the two short strips is 0.08 λ g1 ~0.11 λ g1 Between g1 is the waveguide wavelength corresponding to the low-frequency center frequency.

[0012] Furthermore, the two grooves are symmetrically distributed in a rectangular shape surrounded by the metallized blind hole, and the short side of the rectangular shape is parallel to the length direction of the groove; the length of the groove is 0.01 λ g1 ~0.02 λ g1 The spacing between the two grooves and the adjacent short sides of the rectangular shape is consistent, both within 0.03 λ g1 ~0.04 λ g1 The distance between the left groove and the right end of the metal strip is 0.01 λ g1 ~0.03 λ g1 The distance between the right groove and the left end of the metal strip is 0.02 λ g1 ~0.04 λ g1Between g1 is the waveguide wavelength corresponding to the low-frequency center frequency.

[0013] Furthermore, the distance between resistor 1 and the slot on the right is 0.01 λ g1 ~0.03 λ g1 The distance between resistor 2 and the slot on the right is 0.01 λ g1 ~0.03 λ g1 The distance between resistor 1 and resistor 2 is 0.02 λ g1 ~0.04λ g1 Between g1 is the waveguide wavelength corresponding to the low-frequency center frequency.

[0014] Beneficial effect: the existing dual-frequency power dividers all have the problem of low frequency ratio of high and low frequency bands and are difficult to adjust, so it is impossible to realize a dual-frequency power divider shared by microwave and millimeter waves, and the circuit size is large, the working bandwidth is narrow, and the output isolation of some designs is poor. The present invention places a pair of bent Π-shaped microstrip lines between a pair of parallel grooves of a short-circuited substrate integrated waveguide, and connects a pair of parallel microstrip lines with double resistors across, and utilizes the microwave matching effect of the bent Π-shaped microstrip lines and the stopband effect of the millimeter wave frequency band, as well as the low-frequency cutoff effect of the substrate integrated waveguide, combined with the isolation effect of the double resistors in the microwave millimeter wave frequency band, to realize a dual-band power divider shared by microwave and millimeter waves, which has a higher frequency ratio of high and low frequency bands and is easy to adjust, while taking into account the output port isolation, working bandwidth and overall size.

[0015] Specifically, the input microstrip line, a pair of bent Π-shaped microstrip lines, and a pair of parallel microstrip lines are connected in series in sequence to achieve broadband matching and equal power distribution in the microwave frequency band, and act as a stopband in the millimeter wave frequency band, so that the millimeter wave signal cannot pass through. The substrate integrated waveguide with short circuits at both ends is composed of an intermediate layer metal, a second dielectric layer, a bottom layer metal, and a metalized blind hole. There are parallel grooves on its upper surface, and the left groove is located on the left side of the right end of the input microstrip line, and the right groove is located on the right side of the left end of the parallel microstrip line. Among them, the substrate integrated waveguide has a low-frequency cutoff frequency, so that the microwave signal cannot pass through, and the millimeter wave signal is transmitted to the substrate integrated waveguide with short circuits at both ends through the left groove coupling, and is coupled and output from the right groove to achieve broadband matching and equal power distribution in the millimeter wave frequency band. Resistor 1 and resistor 2 are connected across the parallel microstrip lines. Resistor 1 is located on the left side of the right groove, mainly used to improve the output isolation of the microwave frequency band; resistor 2 is located on the right side of the right groove, mainly used to improve the output isolation of the millimeter wave frequency band. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a schematic diagram of the layer structure of the dual-band power divider of the present invention; Figure 2 It is a schematic diagram of the top metal structure of the dual-band power divider of the present invention; Figure 3 This is a schematic diagram of the metal structure of the middle layer of the dual-band power divider of the present invention; Figure 4 It is a schematic diagram of the bottom metal structure of the dual-band power divider of the present invention; Figure 5 The simulation of the dual-band power divider of the present invention is shown in FIG. S Parameter response curves, where (a) is the microwave frequency band response curve and (b) is the millimeter wave frequency band response curve. DETAILED DESCRIPTION

[0017] The present invention will be further explained below in conjunction with the accompanying drawings.

[0018] like Figure 1 As shown, a dual-band power divider shared by microwave and millimeter waves includes a top metal layer 1, a first dielectric layer 2, an intermediate metal layer 3, a second dielectric layer 4, and a bottom metal layer 5 stacked in sequence, and also includes a plurality of metalized blind holes 6 and resistors 7. The overall structure is symmetrical about the central vertical plane.

[0019] like Figure 2 As shown, the top metal 1 is composed of a metal strip 1 101, a pair of bent Π-shaped metal strips 102, a pair of metal strips 2 103 and a pair of bent metal strips 104 arranged in sequence from left to right. Among them, the bent Π-shaped metal strip 102 is composed of a main strip and two short strips, and the main strip is composed of a horizontal portion and bent portions with both ends facing the same side. The bent portions of the two symmetrically arranged bent Π-shaped metal strips 102 are arranged opposite to each other, and the two short strips of each bent Π-shaped metal strip 102 are symmetrically and vertically connected to the outside of the horizontal portion of the main strip.

[0020] The right ends of the horizontally arranged metal strip 1 101 are respectively connected to the ends of the left bending parts of a pair of bent Π-shaped metal strips 102; the right bending parts of the pair of bent Π-shaped metal strips 102 are respectively connected to the left ends of a pair of metal strips 2 103 in a one-to-one correspondence; the right ends of the pair of metal strips 2 103 are respectively connected to the ends of the vertical parts of a pair of bent metal strips 104 in a one-to-one correspondence, and the horizontal parts of the pair of bent metal strips 104 face to the right.

[0021] The total length of the main strip of the bent Π-shaped metal strip 102 is 0.19 λ g1 ~0.22 λ g1 The length of a single short strip is between 0.01 λ g1 ~0.04 λ g1 The spacing between the two short strips is 0.08 λ g1 ~0.11 λ g1 The main strip impedance and the short strip impedance are between 69 and 72 ohms, λg1 is the waveguide wavelength corresponding to the low-frequency center frequency.

[0022] like Figure 3 As shown, the intermediate metal layer 3 is a rectangular metal ground 302 with a pair of parallel grooves 301, and the length direction of the grooves 301 is perpendicular to the horizontal part of the main strip of the bent Π-shaped metal strip 102. The length of the grooves 301 is 0.01 λ g1 ~0.02 λ g1 between.

[0023] like Figure 4 As shown, the bottom metal 5 is a rectangular metal ground.

[0024] like Figures 1 to 4 As shown, the metallized blind via 6 is used to connect the middle layer metal 3 and the bottom layer metal 5 , and forms a rectangular shape surrounding a pair of parallel grooves 301 , and the short side of the rectangular shape is parallel to the length direction of the groove 301 .

[0025] The two grooves 301 are symmetrically distributed in the rectangular shape surrounded by the metallized blind hole 6, and the spacing between the two grooves 301 and the adjacent short sides of the rectangular shape is consistent, both within 0.03 λ. g1 ~0.04 λ g1 In the vertical plane of the layer structure, the left groove 301 is located on the left side of the right end of the metal strip 101, and the distance between the left groove 301 and the right end of the metal strip 101 is 0.01 λ. g1 ~0.03 λ g1 right groove 301 is located on the right side of the left end of the metal strip 103, and the spacing between the left end of the metal strip 103 is 0.02λ g1 ~0.04 λ g1 between.

[0026] The resistor 7 is composed of a resistor 1 701 and a resistor 2 702, and the two resistors are respectively connected between a pair of metal strips 2 103. In the vertical plane of the layer structure, the resistor 1 701 is located on the left side of the right groove 301, and the distance between the resistor 1 701 and the right groove 301 is 0.01 λ. g1 ~0.03 λ g1 resistor 2 702 is located on the right side of the right slot 301, and the spacing between the right slot 301 is 0.01 λ g1 ~0.03 λ g1 The distance between resistor 1 701 and resistor 2 702 is 0.02 λ g1 ~0.04 λ g1 between.

[0027] The top metal layer 1, the first dielectric layer 2 and the middle metal layer 3 form an input microstrip line, a pair of bent π-shaped microstrip lines, a pair of parallel microstrip lines and a pair of bent output microstrip lines. The middle metal layer 3, the second dielectric layer 4, the bottom metal layer 5 and the metallized blind hole 601 form a substrate integrated waveguide with short circuits at both ends.

[0028] In the present invention, microwave and millimeter wave signals are fed in from input microstrip lines, and are output with equal power from a pair of output microstrip lines under the effect of the overall structure, and the output microstrip lines are isolated from each other.

[0029] In this process, when the microwave signal is fed from the input microstrip line, due to the low-frequency cutoff frequency of the substrate integrated waveguide, the low-frequency cutoff frequency is higher than the microwave operating frequency, so that the microwave signal cannot be transmitted through the substrate integrated waveguide, that is, it can only enter a pair of bent Π-type microstrip lines. The length and impedance setting of the bent Π-type microstrip line can obtain the impedance matching function of the microwave signal, obtain a broadband working bandwidth, and output equal power to a pair of output microstrip lines. The resistor 701 located on the left side of the right slot is used to improve the output isolation within the microwave working frequency band. The operating frequency of the microwave band is controlled by the electrical length of the bent Π-type microstrip line.

[0030] When the millimeter-wave signal is fed from the input microstrip line, since the bent Π-type microstrip line has the stopband function of the millimeter-wave frequency band, it cannot pass through the Π-type microstrip line, and can only be transmitted through the left slot coupling to the substrate integrated waveguide with short circuits at both ends, and coupled out from the right slot. Similarly, due to the millimeter-wave stopband function of the bent Π-type microstrip line, the signal can only be transmitted from the parallel microstrip line to the output microstrip line output. The stopband frequency of the bent Π-type microstrip line is controlled by the electrical length of its short strips and their spacing. The operating frequency of the millimeter-wave frequency band is controlled by the distance between the slot and the short-circuit end of the substrate integrated waveguide, the length of the input microstrip line on the right side of the left slot, and the length of the parallel microstrip line on the left side of the right slot, and broadband matching is obtained in combination with the slot length. The resistor 702 located on the right side of the right slot provides an additional path for the millimeter-wave signal to achieve path cancellation, thereby improving the output isolation within the millimeter-wave operating frequency band.

[0031] Therefore, the present invention has a higher high-low frequency band ratio and is easy to adjust, and can realize a dual-frequency power divider shared by microwave and millimeter waves, while taking into account output port isolation, working bandwidth and overall size.

[0032] This embodiment uses an RO4003C substrate with two layers of the same thickness, and the electrical size of the circuit is 0.37 λ g1 ×0.16 λ g1 Among them, the total length of the main strip of the bent Π-shaped metal strip is 0.20 λ g1 , the short strip length is 0.02 λ g1 , the spacing between the two short strips is 0.10 λ g1; The length of the parallel groove is 0.02 λ g1 , the distance between the groove and the adjacent short side of the rectangular shape is 0.03 λ g1 ; The distance between the left side and the right end of the metal strip is 0.02 λ g1 , the distance between the right groove and the left end of the metal strip is 0.03 λ g1 ; The distance between resistor 1 and the right slot is 0.02 λ g1 , the distance between resistor 2 and the right slot is 0.02λ g1 , the distance between resistor 1 and resistor 2 is 0.03 λ g1 . Figure 5 Given this embodiment S Parameter simulation curve. It can be seen from the figure that the 10-dB impedance matching frequency range in the microwave band is 0.7 GHz – 4.1 GHz, that is, the relative bandwidth is 141.67%, and the 15-dB isolation bandwidth range is 2.13 GHz – 3.56 GHz, that is, the relative bandwidth is 50.26%; the 10-dB impedance matching frequency range in the millimeter wave band is 23.88 GHz – 27.64 GHz, that is, the relative bandwidth is 14.6%, and the three transmission poles are located at 24.09 GHz, 25.82 GHz and 26.89 GH respectively. The output isolation within the working frequency band is greater than 15.7 dB; the frequency ratio of the high and low frequency bands can reach 9.25.

[0033] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A dual-band power divider for microwave and millimeter waves, characterized in that: The invention comprises a top metal layer (1), a first dielectric layer (2), an intermediate metal layer (3), a second dielectric layer (4), and a bottom metal layer (5) which are stacked in sequence, and also comprises a plurality of metallized blind holes (6) and resistors (7); the overall structure is symmetrical about a central vertical plane; the top metal layer (1) is combined with the first dielectric layer (2) and the intermediate metal layer (3) to form a sequentially connected input microstrip line, a pair of bent Π-shaped microstrip lines, a pair of parallel microstrip lines, and a pair of bent output microstrip lines; the intermediate metal layer (3), the second dielectric layer (4), the bottom metal layer (5), and the metallized blind holes (601) form a substrate integrated waveguide with two ends short-circuited.

2. The microwave and millimeter wave dual-band power divider according to claim 1, characterized in that: The top metal (1) comprises a metal strip 1 (101), a pair of bent II-shaped metal strips (102), a pair of metal strip 2 (103) and a pair of bent metal strips (104) which are connected in sequence from left to right.

3. The microwave and millimeter wave dual-band power divider according to claim 2, characterized in that: The bent Π-shaped metal strip (102) is composed of a main strip and two short strips, the main strip being composed of a horizontal portion and bent portions with both ends facing the same side; the bent portions of the two symmetrically arranged bent Π-shaped metal strips (102) are arranged opposite to each other, and the two short strips of each bent Π-shaped metal strip (102) are symmetrically and vertically connected to the outside of the horizontal portion of the main strip.

4. The microwave and millimeter wave dual-band power divider according to claim 3, characterized in that: The intermediate layer metal (3) is a rectangular metal ground (302) with a pair of parallel grooves (301), and the length direction of the grooves (301) is perpendicular to the horizontal part of the main strip of the bent Π-shaped metal strip (102); the bottom layer metal (5) is a rectangular metal ground; the metallized blind hole (6) is used to connect the intermediate layer metal (3) and the bottom layer metal (5), and forms a rectangular shape that surrounds the parallel grooves (301).

5. The microwave and millimeter wave dual-band power divider according to claim 4, characterized in that: In the vertical plane of the layer structure, the left groove (301) is located on the left side of the right end of the metal strip one (101), and the right groove (301) is located on the right side of the left end of the metal strip two (103).

6. The microwave and millimeter wave dual-band power divider according to claim 5, characterized in that: It also includes a resistor 1 (701) and a resistor 2 (702) respectively connected across a pair of metal strips 2 (103), and the two resistors are respectively located on both sides of the slot (301) on the right side.

7. The microwave and millimeter wave dual-band power divider according to any one of claims 3 to 6, characterized in that: The main strip length of the bent Π-shaped metal strip (102) is 0.19 λ g1 ~0.22 λ g1 The length of a single short strip is between 0.01λ g1 ~0.04 λ g1 The spacing between the two short strips is 0.08 λ g1 ~0.11 λ g1 Between g1 is the waveguide wavelength corresponding to the low-frequency center frequency.

8. The microwave and millimeter wave dual-band power divider according to any one of claims 4 to 6, characterized in that: The two grooves (301) are symmetrically distributed in a rectangular shape surrounded by the metallized blind hole (6), and the short side of the rectangular shape is parallel to the length direction of the groove (301); the length of the groove (301) is within 0.01 λ g1 ~0.02 λ g1 The spacing between the two grooves (301) and the adjacent short sides of the rectangular shape is consistent, both within 0.03 λ g1 ~0.04 λ g1 The distance between the left groove (301) and the right end of the metal strip (101) is 0.01 λ g1 ~0.03 λ g1 The distance between the right groove (301) and the left end of the second metal strip (103) is 0.02 λ. g1 ~0.04 λ g1 Between g1 is the waveguide wavelength corresponding to the low-frequency center frequency.

9. The microwave and millimeter wave dual-band power divider according to claim 6, characterized in that: The distance between resistor 1 (701) and the slot (301) on the right is 0.01 λ g1 ~0.03 λ g1 The distance between the resistor 2 (702) and the slot (301) on the right is 0.01 λ. g1 ~0.03 λ g1 The distance between resistor 1 (701) and resistor 2 (702) is 0.02 λ. g1 ~0.04λ g1 Between g1 is the waveguide wavelength corresponding to the low-frequency center frequency.

10. The microwave and millimeter wave dual-band power divider according to any one of claims 1 to 6, characterized in that: The pair of bent Π-shaped microstrip lines are located between a pair of parallel slots of the short-circuited substrate integrated waveguide, and two resistors are respectively connected across the parallel microstrip lines and are respectively located on both sides of the right slot; microwave and millimeter wave signals are fed from the input microstrip lines and are output with equal power from the pair of bent output microstrip lines, and the microwave matching effect and the stopband effect of the bent Π-shaped microstrip lines in the millimeter wave frequency band, as well as the low-frequency cutoff effect of the substrate integrated waveguide, are utilized in combination with the isolation effect of the two resistors in the microwave millimeter wave frequency band to realize a dual-band power divider shared by microwave and millimeter waves.

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