High-power microwave waveguide slot antenna array

Abstract

The invention discloses a high-power microwave waveguide slot antenna array, and aims to solve the problem that a rectangular waveguide slot antenna cannot radiate at an extreme temperature. The antenna is composed of a vacuum window sealing power divider, a separation waveguide, N groups of flanges, N bent waveguides and N high-power microwave rectangular waveguide slot antennas with dielectric covers. The vacuum window sealing power divider carries out power division on microwaves and then inputs the microwaves into the separation waveguides, the separation waveguides input the N groups of microwaves into the N rectangular waveguide slot antennas with the dielectric covers through the N groups of flanges and the bent waveguides, and then the microwaves are radiated out. The vacuum window sealing power divider is composed of a power divider main body, a welding cover, a sealing plate and a medium window. The separating waveguide is composed of a connecting plate and a separating plate. The bent waveguide is composed of a vertical waveguide and a horizontal waveguide. The high-power microwave rectangular waveguide slot antenna with the dielectric cover is composed of the dielectric cover, a slotted waveguide, a supporting column and a supporting rod. The invention has the advantages of compact structure and large power capacity, and can be applied in extreme temperature.

Description

Technical Field

[0001] The invention relates to a power division array antenna in the technical field of high-power microwaves, in particular to a high-power microwave waveguide slot antenna array operating in the C band. Background Art

[0002] High-power microwave (HPM) generally refers to strong electromagnetic radiation with a frequency of 300 MHz to 300 GHz, a peak power greater than 100 MW or an average power greater than 1 MW.

[0003] A high power microwave system usually consists of a primary energy source, a pulse drive source, an HPM source, a high power microwave antenna, etc. As the terminal of a high power microwave system, a high power microwave antenna is one of the key components of the high power microwave system.

[0004] In order to improve the transmission efficiency, antennas are usually arranged in an array. Array antennas usually require multiple input signals, while the output signal of the microwave source is often single. If one input microwave is divided into multiple microwaves and output, a power divider is required. Therefore, the array antenna is usually composed of a power divider and a rectangular waveguide slit antenna. Since the multi-stage cascade power divider of the rectangular waveguide T-type structure has the advantages of strong stability, small insertion loss, good balance, wide bandwidth, and the ability to carry higher power, the power divider used in the array antenna is usually a multi-stage cascade power divider of the rectangular waveguide T-type structure. The current multi-stage cascade power divider of the rectangular waveguide T-type structure is mostly arranged in an array, with a large volume (it is generally recognized in the art that the array arrangement takes up more space), and is limited in use in scenes with strict size requirements. Due to its large volume, it is generally not convenient to use in high altitude or vacuum, so there is no public literature to study the power distribution of this multi-stage cascade power divider of the rectangular waveguide T-type structure in extreme temperatures (low temperature of -50°C and high temperature of 50°C). As a bridge between high-power microwave transmission and antenna array, the power divider is an important component for achieving power distribution. How to ensure the compactness and environmental adaptability of the power divider has become a difficult problem that researchers urgently need to solve. The power capacity of the power divider depends on the structure, and the power capacity of the T-type power divider is generally at the GW level.

[0005] Rectangular waveguide slot antennas are the most commonly used element antennas in array antennas due to their simple structure and convenient array formation. At present, rectangular waveguide slot antennas still have the problem of weak environmental adaptability. In order to improve the platform adaptability of array antennas while ensuring the power capacity and efficiency of array antennas, the interior of rectangular waveguide slot antennas is usually evacuated into a vacuum. This method has high requirements on the sealing structure of rectangular waveguide slot antennas and is difficult to implement. Therefore, the current array antennas cannot achieve power division and radiation in extreme temperatures, and are large and not compact. In addition, array antennas have the problem of RF breakdown that limits the power capacity of the antenna, and it is difficult to achieve a GW-level power capacity.

[0006] Array antennas are widely used in plasma heating, high-power microwave directed energy weapons, high-power radar, high-energy particle RF acceleration and other fields, which also means that the application environment of power dividers is diverse. Therefore, how to achieve a tight arrangement of power dividers and ensure power distribution in extreme temperatures, and how to enable rectangular waveguide slot antennas to radiate HPM in extreme temperatures, has important application value for the development of array antennas. Summary of the invention

[0007] The technical problem to be solved by the present invention is that the current array antenna cannot perform power division and radiation in extreme temperatures and is large and not compact. A high-power microwave waveguide slot antenna array is provided, which has a compact structure and can solve the problems of the current array antenna being difficult to use in low temperatures of -50°C and high temperatures of 50°C and being large and not compact.

[0008] The technical solution adopted by the present invention to solve its technical problem is:

[0009] The present invention includes a power divider and N rectangular waveguide slot antennas, wherein the power divider is a vacuum window sealed power divider, and the rectangular waveguide slot antenna is a rectangular waveguide slot antenna with a dielectric cover. The vacuum window sealed power divider and the N rectangular waveguide slot antennas with a dielectric cover are connected through a separation waveguide, N groups of flanges, and N curved waveguides. The end of the present invention close to the microwave source is defined as the input end, and the end away from the microwave source is defined as the output end. The vacuum window sealed power divider of the present invention has an input port connected to an external microwave source, and the vacuum window sealed power divider divides the microwaves received from the microwave source into N groups of microwaves and then inputs them into the separation waveguide, and the separation waveguide inputs the N groups of microwaves into N rectangular waveguide slot antennas with a dielectric cover through N groups of flanges and curved waveguides, and the N rectangular waveguide slot antennas with a dielectric cover radiate the microwaves. N is a positive integer, which is equal to the power fraction to be achieved, and is generally an even number (for example, if the power divider needs to divide one into sixteen, N is equal to 16; if the power divider needs to divide one into thirty-two, N is equal to 32).

[0010] The vacuum window sealed power divider is composed of a power divider body, a welding cover, a sealing plate, and a dielectric window. The power divider body has an input port connected to an external microwave source to receive microwaves output by the microwave source for power distribution. The power divider body has N output ports, namely the first output port, the second output port, ..., the nth output port, ..., the Nth output port, which are connected to the dielectric window, and the dielectric window is connected to the separation waveguide. For the convenience of description, along the input to output direction, draw the central axis OO' on the upper surface of the sealing plate, point O is on the input end face of the vacuum window sealed power divider, point O' is on the dielectric window, and the vacuum window sealed power divider is symmetrical about the central axis OO'; draw the horizontal axis PP' through point O on the upper surface of the sealing plate, PP' is perpendicular to OO', P is the left end, and P' is the right end; let the end close to the central axis OO' in the vertical direction be the upper end, and the end away from the central axis OO' be the lower end; along the central axis OO', the point close to O is the front end, and the point close to O' is the rear end; the power divider body has an input port at point O, and N output ports are opened near O' to connect with the dielectric window. The power divider body is a rectangular parallelepiped with chamfered corners at both ends of the front surface, and is made of metal material. The input port of the power divider body is connected to the microwave source to receive the microwave input by the microwave source. The welding cover is a rectangular plate with chamfered angles at both ends of the front surface, the chamfered angles of the front surface match the chamfered angles at both ends of the front surface of the power divider body, and is made of metal material. The upper surface of the power divider body is sealed to ensure that the input microwaves propagate in the power divider body and reduce microwave leakage; the sealing plate has the same shape as the welding cover, and is also a rectangular plate with chamfered angles at both ends of the front surface. It is made of 30% glass fiber PEEK material and is located on the upper surface of the welding cover. The function is to further seal the upper surface of the power divider body on the basis of the welding cover sealing the upper surface of the power divider body, thereby further reducing the leakage of microwaves in the power divider body; the dielectric window is connected to the N output ports of the power divider body, and the function is to transmit N groups of microwaves received from the N output ports of the power divider body after power division to the separation waveguide during power division, and to ensure airtightness at high and low temperatures, thereby ensuring the normal use of the present invention at high and low temperatures.

[0011] The rear surface of the dielectric window of the vacuum window sealed power divider is welded to the front surface of the separation waveguide; N flanges are welded on the upper surface of the separation waveguide; the lower surfaces of the N flanges are respectively welded to the upper surface of the separation waveguide, and the flange upper plates of the N flanges are respectively connected to the N curved waveguides (vertical waveguides of the curved waveguides) in sequence; the N curved waveguides (upper ports of the curved waveguides) are respectively connected to the N rectangular waveguide slot antennas with dielectric covers (front covers of the dielectric covers of the rectangular waveguide slot antennas with dielectric covers) in sequence.

[0012] The welding cover is welded to the upper surface of the power divider body, and the sealing plate is fixed to the upper surface of the welding cover by screws.

[0013] The power divider body is made of metal material, and is composed of a power divider filling body and a main body shell. The main body shell is composed of four parts: a shell bottom plate, a shell middle plate, a shell upper plate and a waveguide port. The power divider filling body is located between the welding cover and the shell bottom plate of the main body shell, and the outer wall is wrapped by the main body shell. A power divider channel is dug in the power divider filling body, and the power divider channel is divided into a primary power divider channel, a secondary power divider channel, a tertiary power divider channel, and a quaternary power divider channel according to its function. The primary power divider channel and the secondary power divider channel are connected, and the tertiary power divider channel and the quaternary power divider channel are arranged in sequence from O to O', and are connected to each other from front to back.

[0014] The upper plate of the shell is closest to OO', the upper surface of the middle plate of the shell is welded to the lower surface of the upper plate of the shell, the bottom plate of the shell is farthest from OO', the upper surface of the bottom plate of the shell is welded to the lower surface of the middle plate of the shell, and the rear surface of the waveguide port is welded to the front surface of the middle plate of the shell. The bottom plate of the shell is a rectangular plate with a width of a3, a length of b1, and a height of h1. The bottom plate of the shell is an axisymmetric structure, and the left and right ends of the front surface of the bottom plate of the shell are chamfered, the chamfer angle is θ1, and the chamfer size is c1. The chamfered surface of the bottom plate of the shell (that is, the inclined bevel surface formed by the chamfer) is chamfered at the connection with the left and right ends of the front surface of the bottom plate of the shell, and the chamfer radius is r1; the surface at the left end of the chamfer of the bottom plate of the shell is chamfered at the connection with the left end surface of the bottom plate of the shell, and the chamfer radius is r1; the surface at the right end of the chamfer of the bottom plate of the shell is chamfered at the connection with the right end surface of the bottom plate of the shell, and the chamfer radius is r1.

[0015] The middle plate of the shell is composed of a horizontal middle plate, a left inclined middle plate and a right inclined middle plate symmetrical about the OO' axis, and a left longitudinal middle plate and a right longitudinal middle plate symmetrical about the OO' axis. The horizontal middle plate, the left inclined middle plate, the right inclined middle plate, the left longitudinal middle plate, and the right longitudinal middle plate are all rectangular plates with a height of h3 and a thickness of s1. The lower end of the rear surface of the horizontal middle plate is welded to the front surface of the shell bottom plate, and the width of the horizontal middle plate is a2. The lengths of the left inclined middle plate and the right inclined middle plate are both L1. The lower end of the right surface of the left longitudinal middle plate is welded to the left surface of the shell bottom plate, and the right longitudinal middle plate is The lower end of the left surface is welded to the right surface of the bottom plate of the shell, and the lengths of the left longitudinal middle plate and the right longitudinal middle plate are both b2; the left end face of the transverse middle plate is welded to the right end face of the left inclined middle plate, and the right end face of the transverse middle plate is welded to the left end face of the right inclined middle plate, and the inner surface of the connection is rounded, and the chamfer radius is r1; the left end face of the left inclined middle plate is welded to the front end face of the left longitudinal middle plate, and the inner surface of the connection is rounded, and the chamfer radius is r1; the right end face of the right inclined middle plate is welded to the front end face of the right longitudinal middle plate, and the inner surface of the connection is chamfered, and the chamfer radius is r1. The upper plate of the shell is a rectangular plate with a width of a3, a length of b3, and a height of h2; the left end face of the upper plate of the shell is welded to the right end face of the left longitudinal middle plate, and the connection away from O' is rounded, and the chamfer radius is r1. The waveguide port is symmetrical about the OO' axis, the rear end face of the waveguide port is welded to the front end face of the transverse middle plate, the outer surface of the welding point is chamfered, and the chamfer radius is r2; the waveguide port is a rectangular plate with a width of a4, a length of b4, and a height equal to h3; the waveguide port and the transverse middle plate have a through hole along the OO' direction (as the input port of the present invention during power distribution), the width of the through hole is d, the depth is b3, the height is h4, the distance between the lower surface of the through hole and the lower surface of the waveguide port is equal to h1, and the distance between the upper surface of the through hole and the upper surface of the waveguide port is equal to h2.

[0016] The bottom plate of the shell has a first groove vertically downward from the upper surface, with a depth of h5; the first groove is a rectangular cavity with a width of a5 and a length of s3; the left and right ends of the lower surface of the first groove are rounded, and the chamfer radius is r11; the distance from the rear end face of the first groove to the rear end face of the bottom plate of the shell is equal to s1, the first groove is symmetrical about the OO' axis, the distance from the left end face of the first groove to the left surface of the left longitudinal middle plate is s2, and the distance from the right end face of the first groove to the right surface of the right longitudinal middle plate is equal to s2. The upper plate of the shell has a second groove vertically upward from the lower surface, with a depth of h6; the second groove is a rectangular cavity with a width of a5 and a length of s3; the two ends of the upper surface of the second groove are rounded, and the chamfer radius is r2; the distance from the rear surface of the second groove to the rear surface of the upper plate of the shell is equal to s1, the second groove is symmetrical about the OO' axis, the distance from the left end face of the second groove to the left surface of the left longitudinal middle plate is equal to s2, and the distance from the right end face of the second groove to the right surface of the right longitudinal middle plate is equal to s2. The power-dividing filler is a rectangular plate made of metal material, with a width of a3, a length of b1, and a height of h4. The power-dividing filler is an axisymmetric structure, with both ends of the front surface of the power-dividing filler being chamfered, with a chamfer angle equal to θ1 and a chamfer radius equal to c1. The lower surface of the power-dividing filler is welded to the upper surface of the bottom plate of the shell, the front surface of the power-dividing filler is welded to the rear surface of the horizontal middle plate, the chamfered surface of the left end of the front surface of the power-dividing filler is welded to the right surface of the left inclined middle plate, the chamfered surface of the right end of the front surface of the power-dividing filler is welded to the left surface of the right inclined middle plate, the left end surface of the power-dividing filler is welded to the right surface of the left longitudinal middle plate, and the right end surface of the power-dividing filler is welded to the left surface of the right longitudinal middle plate. The rear end surface of the upper plate of the shell is flush with the rear end surface of the power-dividing filler, and the lower surface of the upper plate of the shell is welded to the upper surface of the power-dividing filler; the front end surface of the welding cover is flush with the front end surface of the power-dividing filler, and the lower surface of the welding cover is welded to the upper surface of the power-dividing filler. Except that the height may be unequal, the lower surface of the power divider filling body is exactly the same as the upper surface of the shell bottom plate, and the lower surface of the power divider filling body is welded to the upper surface of the shell bottom plate. Therefore, the lower surface of the power divider filling body is wrapped by the shell bottom plate, and the power divider filling body is surrounded by the horizontal middle plate, the left inclined middle plate, the right inclined middle plate, the left longitudinal middle plate, and the right longitudinal middle plate, and the upper surface of the power divider filling body is wrapped by the shell upper plate and the welding cover.

[0017] A primary power division channel, a secondary power division channel, a tertiary power division channel, and a quaternary power division channel are dug in the power division filling body. The primary power division channel is an axisymmetric structure, and is composed of N1 primary T-shaped power division cavities and N1 primary trapezoidal bodies. The primary trapezoidal bodies are made of metal materials, and there is a primary trapezoidal body in each primary T-shaped power division cavity. The primary trapezoidal body is located in the power division channel dug by the power division filling body. The lower surface of the primary trapezoidal body is welded to the upper surface of the bottom plate of the outer shell, and the welding surface is the hollow part of the lower bottom surface of the power division filling body. The upper surface of the primary trapezoidal body is welded to the lower surface of the welding cover, and the long side surface of the primary trapezoidal body, that is, the rear end surface, is welded to the rear end surface of the transverse part of the primary T-shaped power division cavity; the primary T-shaped power division cavity is composed of a transverse part rectangular body cavity parallel to the OO' axis and a longitudinal part rectangular body cavity parallel to the PP' axis. The cavities are vertically intersected, i.e. T-shaped, the width of the horizontal part of the first-stage T-shaped power splitter cavity is a1, the length is equal to d, and the depth is equal to h4, the width of the longitudinal part of the first-stage T-shaped power splitter cavity is equal to d, the length is b5, and the depth is h4; the left and right ends of the front surface of the horizontal part of the first-stage T-shaped power splitter cavity are chamfered, the chamfer angle is equal to θ1, and the chamfer size is c2; the chamfer of the first-stage T-shaped power splitter cavity and the left end surface of the horizontal part of the first-stage T-shaped power splitter cavity are connected with the rounded corners, the chamfer radius is r4, the chamfer of the first-stage T-shaped power splitter cavity and the right end surface of the horizontal part of the first-stage T-shaped power splitter cavity are connected with the rounded corners, the chamfer radius is r4, the chamfer of the first-stage T-shaped power splitter cavity and the two ends of the front surface of the horizontal part of the first-stage T-shaped power splitter cavity are connected with the rounded corners , the chamfer radius is r4; the horizontal distance from the left end face of the longitudinal part of the first-level T-shaped power dividing cavity to the left end face of the transverse part of the first-level T-shaped power dividing cavity is a10, and the horizontal distance from the right end face of the longitudinal part of the first-level T-shaped power dividing cavity to the right end face of the transverse part of the first-level T-shaped power dividing cavity is equal to a10; the front end face of the transverse part of the first-level T-shaped power dividing cavity and the rear end face of the longitudinal part of the first-level T-shaped power dividing cavity are chamfered at both ends of the connection, and the chamfer radius is r3; the horizontal distance from the left end face of the transverse part of the first-level T-shaped power dividing cavity to the right surface of the left inclined middle plate is a6, and the horizontal distance from the right end face of the transverse part of the first-level T-shaped power dividing cavity to the left surface of the right inclined middle plate is equal to a6; each first-level T-shaped power dividing cavity has a first-level trapezoidal body, and the first-level trapezoidal body is a trapezoidal body. The body is an isosceles trapezoid, and the two ends of the connection between the long side face of the first-level trapezoid body, that is, the rear end face and the transverse part of the first-level T-shaped power splitter cavity are rounded, and the chamfer radius is equal to r4; the long side length of the trapezoidal face of the first-level trapezoid body is a7, the short side length of the trapezoidal face is a8, the height of the trapezoidal face is b6, the height of the first-level trapezoid body is equal to h4, and the angle of the acute internal angle is θ2; the connection between the left inclined surface of the first-level trapezoid body and the front end face is rounded, and the chamfer radius is r5, and the connection between the right inclined surface of the first-level trapezoid body and the front end face is rounded, and the chamfer radius is r5; the distance from the left end of the rear end face of the first-level trapezoid body to the left end of the transverse part of the first-level T-shaped power splitter cavity is a9, and the distance from the right end of the rear end face of the first-level trapezoid body to the right end of the transverse part of the first-level T-shaped power splitter cavity is equal to a9.

[0018] The secondary power division channel is an axisymmetric structure. The secondary power division channel is composed of N2 secondary T-shaped power division cavities and N2 secondary trapezoidal bodies. The secondary trapezoidal bodies are made of metal materials. There is a secondary trapezoidal body in each secondary T-shaped power division cavity. The secondary trapezoidal body is located in the power division channel dug by the power division filling body. The lower surface of the secondary trapezoidal body is welded to the upper surface of the bottom plate of the shell. The welding surface is the hollow part of the lower bottom surface of the power division filling body. The upper surface of the secondary trapezoidal body is welded to the lower surface of the welding cover. The long side surface of the secondary trapezoidal body, that is, the rear end surface, is welded to the rear end surface of the transverse part of the secondary T-shaped power division cavity; the secondary T-shaped power division cavity is composed of a transverse part rectangular body cavity parallel to the OO' axis and a longitudinal part rectangular body cavity parallel to the PP' axis, which intersect vertically, that is, T-shaped, secondary The width of the transverse part of the T-shaped power splitter cavity is a11, the length is equal to d, and the depth is equal to h4. The width of the longitudinal part of the secondary T-shaped power splitter cavity is equal to d, the length is b7, and the depth is h4; the transverse part of the secondary T-shaped power splitter cavity is chamfered at the left and right ends of the front end surface, the chamfer angle is equal to θ1, and the chamfer size is equal to c2; the left chamfer of the secondary T-shaped power splitter cavity and the left end surface of the transverse part of the secondary T-shaped power splitter cavity are chamfered at the connection, and the chamfer radius is equal to r4; the right chamfer of the secondary T-shaped power splitter cavity and the right end surface of the transverse part of the secondary T-shaped power splitter cavity are chamfered at the connection, and the chamfer radius is equal to r4; the chamfer of the secondary T-shaped power splitter cavity and the two ends of the front surface of the transverse part of the secondary T-shaped power splitter cavity are chamfered at the connection, and the chamfer radius is equal to r4; the secondary T-shaped power splitter cavity closest to the left inclined middle plate The horizontal distance from the left end face of the longitudinal part of the secondary T-type power dividing cavity to the left end face of the transverse part of the secondary T-type power dividing cavity is a12, and the horizontal distance from the right end face of the longitudinal part of the secondary T-type power dividing cavity to the right end face of the transverse part of the secondary T-type power dividing cavity is equal to a13; the front end face of the longitudinal part of the secondary T-type power dividing cavity is rounded at the end closer to the left and right end faces of the transverse part of the secondary T-type power dividing cavity, and the chamfer radius is equal to r3; the front end face of the transverse part of the secondary T-type power dividing cavity and the rear end face of the longitudinal part of the secondary T-type power dividing cavity are rounded at both ends of the connection, and the chamfer radius is equal to r1; the horizontal distance from the left end face of the transverse part of the secondary T-type power dividing cavity closest to the left inclined middle plate to the right surface of the left inclined middle plate is a14, and the transverse part of the secondary T-type power dividing cavity closest to the right inclined middle plate is a16. The horizontal distance from the right end face to the left surface of the right inclined middle plate is equal to a14; the two adjacent secondary T-shaped power splitter cavities satisfy the axially symmetrical arrangement, and the horizontal distance between the right end face of the transverse part of the secondary T-shaped power splitter cavity and the left end face of the transverse part of the adjacent secondary T-shaped power splitter cavity on the right is a15; each secondary T-shaped power splitter cavity has a secondary trapezoidal body, and the long side surface of the secondary trapezoidal body, i.e., the rear end face, is welded tightly to the rear end face of the transverse part of the secondary T-shaped power splitter cavity, and the two ends of the connection are chamfered, and the chamfer radius is equal to r4; the secondary trapezoidal body is an isosceles trapezoidal body, and the length of the long side of the isosceles trapezoidal surface of the secondary trapezoidal body is a16, the length of the short side of the isosceles trapezoidal surface is a17, the height of the isosceles trapezoidal surface is b8, the height of the secondary trapezoidal body is equal to h4, and the angle of the acute internal angle is θ3;The connection between the left inclined surface and the front end face of the secondary trapezoidal body is rounded, and the chamfer radius is r6. The connection between the right inclined surface and the front end face of the secondary trapezoidal body is rounded, and the chamfer radius is equal to r6; the distance from the left end of the rear end face of the secondary trapezoidal body closest to the left inclined middle plate to the left end face of the horizontal part of the secondary T-shaped power splitting cavity is a18, and the distance from the right end of the rear end face of the secondary trapezoidal body closest to the left inclined middle plate to the right end face of the horizontal part of the secondary T-shaped power splitting cavity is equal to a19; the two adjacent secondary trapezoidal bodies meet the axial symmetric arrangement, and the horizontal distance between the right end of the rear end face of the secondary trapezoidal body and the left end of the rear end face of the adjacent secondary trapezoidal body on the right is a20. ;

[0019] The three-stage power splitting channel is an axisymmetric structure. The three-stage power splitting channel is composed of N3 three-stage T-type power splitting cavities and N3 three-stage trapezoidal bodies. The three-stage trapezoidal bodies are made of metal materials. There is a three-stage trapezoidal body in each three-stage T-type power splitting cavity. The three-stage trapezoidal body is located in the power splitting channel dug by the power splitting filling body. The lower surface of the three-stage trapezoidal body is welded to the upper surface of the bottom plate of the shell. The welding surface is the hollow part of the lower bottom surface of the power splitting filling body. The upper surface of the three-stage trapezoidal body is welded to the lower surface of the welding cover. The long side surface of the three-stage trapezoidal body, that is, the rear end surface, is welded to the rear end surface of the transverse part of the three-stage T-type power splitting cavity. The three-stage T-type power splitting cavity consists of a transverse part parallel to the OO' axis. The rectangular cavity and the longitudinal rectangular cavity parallel to the PP' axis are perpendicularly intersected to form a T-shaped, three-stage T-shaped power splitting cavity. The width of the transverse part is a21, the length is equal to d, and the depth is h4. The width of the longitudinal part of the three-stage T-shaped power splitting cavity is equal to d, the length is equal to b7, and the depth is h4; the front end face of the transverse part of the three-stage T-shaped power splitting cavity is chamfered at both ends, the chamfer angle is equal to θ1, and the chamfer size is equal to c3; the left chamfer of the three-stage T-shaped power splitting cavity and the left end face of the transverse part of the three-stage T-shaped power splitting cavity are chamfered at the connection, and the chamfer radius is r4, the right chamfer of the three-stage T-shaped power splitting cavity and the right end face of the transverse part of the three-stage T-shaped power splitting cavity The end surface connection is rounded, and the chamfer radius is equal to r4. The connection between the chamfer angle of the three-stage T-type power splitter cavity and the front surface of the two ends of the three-stage T-type power splitter cavity transverse part is rounded, and the chamfer radius is equal to r4. The horizontal distance from the left end surface of the three-stage T-type power splitter cavity longitudinal part closest to the left inclined middle plate to the left end surface of the three-stage T-type power splitter cavity transverse part is a22, and the horizontal distance from the right end surface of the three-stage T-type power splitter cavity longitudinal part closest to the left inclined middle plate to the right end surface of the three-stage T-type power splitter cavity transverse part is a23. The front end surface of the three-stage T-type power splitter cavity longitudinal part is rounded at the end closer to the left and right end surfaces of the three-stage T-type power splitter cavity transverse part, and the chamfer radius is equal to r3; the front end face of the transverse part of the three-level T-shaped power dividing cavity and the rear end face of the longitudinal part of the three-level T-shaped power dividing cavity are rounded at both ends of the connection, and the chamfer radius is r7; the horizontal distance from the left end face of the transverse part of the three-level T-shaped power dividing cavity closest to the left-inclined middle plate to the left end face of the left-inclined middle plate is a24, and the horizontal distance from the right end face of the transverse part of the three-level T-shaped power dividing cavity closest to the right-inclined middle plate to the right end face of the right-inclined middle plate is equal to a24; the two adjacent three-level T-shaped power dividing cavities satisfy the axially symmetrical arrangement, and the horizontal distance between the right end face of the transverse part of the three-level T-shaped power dividing cavity and the left end face of the transverse part of the adjacent three-level T-shaped power dividing cavity on the right is a25.Each three-stage T-type power splitter cavity has a three-stage trapezoidal body. The long side surface of the three-stage trapezoidal body, i.e., the rear end, is welded tightly to the rear end surface of the transverse part of the three-stage T-type power splitter cavity. The two ends of the connection are rounded, and the chamfer radius is equal to r4; the three-stage trapezoidal body is an isosceles trapezoidal body. The long side length of the isosceles trapezoidal surface of the three-stage trapezoidal body is a26, the short side length of the isosceles trapezoidal surface is a27, the height of the isosceles trapezoidal surface is b9, the height of the three-stage trapezoidal body is equal to h4, and the angle of the acute internal angle is θ4; the connection between the left inclined surface of the three-stage trapezoidal body and the front end surface is rounded, and the chamfer is equal to r4. The radius is r3, and the connection between the right inclined surface and the front end surface of the three-level trapezoidal body is chamfered, and the chamfer radius is equal to r3; the distance from the left end of the rear end surface of the three-level trapezoidal body closest to the left inclined middle plate to the left end surface of the transverse part of the three-level T-shaped power splitter cavity is a28, and the distance from the right end of the rear end surface of the three-level trapezoidal body closest to the left inclined middle plate to the right end surface of the transverse part of the three-level T-shaped power splitter cavity is equal to a29; the two adjacent three-level trapezoidal bodies satisfy the axially symmetrical arrangement, and the horizontal distance between the right end of the rear end surface of the three-level trapezoidal body and the left end of the rear end surface of the adjacent three-level trapezoidal body on the right is a30.

[0020] The four-level power division channel is an axisymmetric structure. The four-level power division channel is composed of N4 four-level T-shaped power division cavities and N4 four-level capsule columns. The four-level capsule columns are made of metal materials. There is a four-level capsule column in each four-level T-shaped power division cavity. The four-level capsule column is located in the power division channel dug by the power division filling body. The lower surface of the four-level capsule column is welded to the upper surface of the bottom plate of the shell. The welding surface is the hollow part of the lower bottom surface of the power division filling body. A part of the upper surface of the four-level capsule column is welded to the lower surface of the upper plate of the shell; the four-level T-shaped power division cavity is composed of a transverse rectangular cavity parallel to the OO' axis and a longitudinal rectangular cavity parallel to the PP' axis, which intersect vertically, that is, T-shaped; the transverse part width of the four-level T-shaped power division cavity is a31, the length is b10, and the depth is equal to h4, The width of the longitudinal part of the four-stage T-shaped power dividing cavity is equal to d, the length is equal to b11, and the depth is equal to h4; the front end face of the transverse part of the four-stage T-shaped power dividing cavity is chamfered at both ends, the chamfer angle is equal to θ1, and the chamfer radius is c4; the plane parallel to the left end face of the transverse part of the four-stage T-shaped power dividing cavity and the distance from the left end face of the transverse part of the four-stage T-shaped power dividing cavity is r9, and the chamfer is rounded at the intersection with the left chamfer of the four-stage T-shaped power dividing cavity, and the chamfer radius is r7; the plane parallel to the left end face of the transverse part of the four-stage T-shaped power dividing cavity and the distance from the left end face of the transverse part of the four-stage T-shaped power dividing cavity is r9, and the chamfer is rounded at the intersection with the left end face of the four-stage T-shaped power dividing cavity, and the chamfer radius is r9; the plane parallel to the right end face of the transverse part of the four-stage T-shaped power dividing cavity and the distance from the left end face of the transverse part of the four-stage T-shaped power dividing cavity is r9. The plane with a spacing equal to r9 from the right end face of the longitudinal part is rounded at the intersection with the right chamfer of the four-stage T-type power dividing cavity, and the chamfer radius is r7; the plane parallel to the right end face of the transverse part of the four-stage T-type power dividing cavity and with a spacing equal to r9 from the right end face of the transverse part of the four-stage T-type power dividing cavity is rounded at the intersection with the right end face of the four-stage T-type power dividing cavity, and the chamfer radius is r9; the horizontal distance from the left end face of the longitudinal part of the four-stage T-type power dividing cavity to the left end face of the transverse part of the four-stage T-type power dividing cavity is equal to c4, and the horizontal distance from the right end face of the longitudinal part of the four-stage T-type power dividing cavity to the right end face of the transverse part of the four-stage T-type power dividing cavity is equal to c4; the front end face of the transverse part of the four-stage T-type power dividing cavity and the rear end face of the longitudinal part of the four-stage T-type power dividing cavity are rounded at both ends of the connection, and the chamfer radius is r8; the distance from the left longitudinal The horizontal distance from the left end face of the transverse part of the four-level T-shaped power splitter cavity closest to the middle plate to the right end face of the left longitudinal middle plate is s4, and the horizontal distance from the right end face of the transverse part of the four-level T-shaped power splitter cavity closest to the right longitudinal middle plate to the left end face of the right longitudinal middle plate is equal to s4; the four-level T-shaped power splitter cavity closest to the left longitudinal middle plate is rounded at the intersection of the rounded corner with the left longitudinal middle plate, and the chamfer radius is equal to r4; the four-level T-shaped power splitter cavity closest to the right longitudinal middle plate is rounded at the intersection of the rounded corner with the right longitudinal middle plate, and the chamfer radius is equal to r4; the front end face of the longitudinal part of the four-level T-shaped power splitter cavity closest to the left longitudinal middle plate is rounded at the right end, and the chamfer radius is r10; the front end face of the longitudinal part of the four-level T-shaped power splitter cavity closest to the right longitudinal middle plate is rounded at the left end, and the chamfer radius is r10;The front end face of the longitudinal part of the four-level T-shaped power splitting cavity that is second closest to the left longitudinal middle plate is rounded at the left end, and the chamfer radius is r10; the front end face of the longitudinal part of the four-level T-shaped power splitting cavity that is second closest to the right longitudinal middle plate is rounded at the right end, and the chamfer radius is equal to r10; the transverse parts of two adjacent four-level T-shaped power splitting cavities are interconnected, and except for the two four-level T-shaped power splitting cavities that are closest to the left longitudinal middle plate and the two four-level T-shaped power splitting cavities that are closest to the right longitudinal middle plate, the other two adjacent four-level T-shaped power splitting cavities meet the axial symmetric arrangement; each four-level T-shaped power splitting cavity has a four-level capsule column, and the four-level capsule column The distance from the left end face of the body to the left end face of the four-stage T-type power splitting cavity is a32, and the distance from the right end face of the four-stage capsule column to the right end face of the four-stage T-type power splitting cavity is equal to a32; the width of the four-stage capsule column is a33, the length is b12, and the height is equal to h4. The two ends of the four-stage capsule column are rounded, and the chamfer radius is equal to r9; the distance from the front top of the four-stage capsule column to the front end face of the longitudinal part of the four-stage T-type power splitting cavity is b13; the horizontal distances between adjacent four-stage capsule columns are equal, and the horizontal distance between the right end face of the four-stage capsule column and the left end face of the adjacent four-stage capsule column on the right is a34. The transverse part of each four-stage T-type power splitting cavity is separated by the four-stage capsule column located therein, forming two interconnected channels, that is, two ports, which serve as output ports for power distribution; N4 four-stage T-type power splitting cavities have a total of N output ports, and N and N4 satisfy N=N4*2. ;

[0021] The welding cover is made of metal material to seal the power divider body to ensure that the input microwave is propagated in the power divider body. The width of the welding cover is equal to a3, the length is b14, and the height is h7; the lower surface of the welding cover is welded on the upper surface of the power divider filling body; the welding cover is an axisymmetric structure, and the left and right ends of the front surface of the welding cover are chamfered, the chamfer angle is equal to θ1, and the chamfer radius is equal to c1; the left and right ends of the rear surface of the welding cover are rounded, and the chamfer radius is equal to r1; the left chamfer of the welding cover and the left end face of the welding cover are connected by a rounded corner, and the chamfer radius is equal to r1; the right chamfer of the welding cover and the right end face of the welding cover are connected by a rounded corner, and the chamfer radius is equal to r1.

[0022] As shown, the sealing plate is a cuboid made of 30% glass fiber PEEK material, with a width equal to a3, a length equal to b14, and a height equal to h6; except that the height may be unequal, the sealing plate and the welding cover are exactly the same in shape, and the lower surface of the sealing plate is fixed to the upper surface of the welding cover with screws.

[0023] The dielectric window is a rectangular cavity made of 30% glass fiber PEEK material, with a width of a0, a length of b15, and a height of h3. The front surface of the dielectric window is fixed to the rear surface of the bottom plate of the outer shell of the power divider body, the rear surface of the left longitudinal middle plate, the rear surface of the right longitudinal middle plate, and the rear surface of the upper plate of the outer shell with screws. The front surface of the dielectric window is provided with a first rectangular groove at a distance of h8 from the upper surface of the dielectric window, with a depth of s5 in the direction of the rear surface of the dielectric window; the width of the first rectangular groove is equal to a5, and the height is h9; the rear surface of the dielectric window is provided with a second rectangular groove at a distance of h8 from the upper surface of the dielectric window, with a depth of s5 in the direction of the front surface of the dielectric window; the width of the second rectangular groove is equal to a5, and the height is h9; the front surface of the dielectric window is provided with a third rectangular groove at a distance of h10 from the lower surface of the dielectric window, with a depth of s5 in the direction of the rear surface of the dielectric window; the width of the third rectangular groove is equal to a5, and the height is h9; the rear surface of the dielectric window is provided with a third rectangular groove at a distance of h10 from the lower surface of the dielectric window, with a depth of s5 in the direction of the rear surface of the dielectric window; the width of the third rectangular groove is equal to a5, and the height is h9; the rear surface of the dielectric window is provided with a third rectangular groove at a distance of h10 from the lower surface of the dielectric window, with a depth of Four rectangular grooves with a depth of s5; the fourth rectangular groove has a width equal to a5 and a height equal to h9; the first rectangular plate is filled in the first rectangular groove, the first rectangular plate is a metal cuboid with a width equal to a5, a length equal to s5, and a height equal to h9; the second rectangular plate is filled in the second rectangular groove, the second rectangular plate is a metal cuboid with a width equal to a5, a length equal to s5, and a height equal to h9; the third rectangular plate is filled in the third rectangular groove, the third rectangular plate is a metal cuboid with a width equal to a5, a length equal to s5, and a height equal to h9; the fourth rectangular plate is filled in the fourth rectangular groove, the fourth rectangular plate is a metal cuboid with a width equal to a5, a length equal to s5, and a height equal to h9.

[0024] The front surface of the dielectric window is s6 away from the left end surface of the dielectric window, and a left rectangular through groove is opened toward the rear surface of the dielectric window, with a depth equal to b15. The left rectangular through groove is a cuboid with a width equal to s3 and a height equal to h11; the left rectangular through groove is rounded at both ends, and the chamfer radius is r12; a fifth rectangular plate is filled from the front surface of the left rectangular through groove to the rear surface, the fifth rectangular plate is a metal cuboid with a width equal to s3, a length equal to b16, and a height equal to h11; the fifth rectangular plate is rounded at both ends, and the chamfer radius is r12; a sixth rectangular plate is filled from the rear surface of the left rectangular through groove to the front surface, the sixth rectangular plate is a metal cuboid with a width equal to s3, a length equal to b16, and a height equal to h11; the sixth rectangular plate is rounded at both ends, and the chamfer radius is r12. The front surface of the dielectric window is s6 away from the right end surface of the dielectric window, and a right rectangular through groove is opened toward the rear surface of the dielectric window, with a depth equal to b15, a width equal to s3, and a height equal to h11; the right rectangular through groove is rounded at both ends, and the chamfer radius is r12. From the front surface of the right rectangular through groove to the rear surface, the seventh rectangular plate is filled, the seventh rectangular plate is a metal cuboid, the width is equal to s3, the length is equal to b16, and the height is equal to h11; the seventh rectangular plate is rounded at both ends, and the chamfer radius is r12; from the rear surface of the right rectangular through groove to the front surface, the eighth rectangular plate is filled, the eighth rectangular plate is a metal cuboid, the width is equal to s3, the length is equal to b16, and the height is equal to h11; the eighth rectangular plate is rounded at both ends, and the chamfer radius is r12. The front end face of the dielectric window is between the left rectangular through slot and the right rectangular through slot, and N5 triangular prism grooves are opened from left to right in sequence; the upper end face of the triangular prism groove coincides with the lower surface of the first rectangular groove, and the lower end face of the triangular prism groove coincides with the upper surface of the third rectangular groove; the upper end face of the triangular prism groove is an equilateral triangle with a side length of s7; the height of the triangular prism groove is equal to h4. The function of the triangular prism groove is to increase the power capacity. The microwave is first directly transmitted through the rectangle surrounded by the first rectangular plate, the third rectangular plate, the fifth rectangular plate, and the seventh rectangular plate in the dielectric window, and then propagated through the rectangle surrounded by the second rectangular plate, the fourth rectangular plate, the sixth rectangular plate, and the eighth rectangular plate in the dielectric window. The rear surface of the dielectric window is connected to the front surface of the separation waveguide.

[0025] The separated waveguide, flange and curved waveguide are all made of metal materials.

[0026] The separation waveguide is composed of a connection plate and a separation plate. The connection plate is a rectangular parallelepiped plate with a width equal to a0, a length equal to b17, and a height equal to h3. The separation plate is composed of a separation upper plate and a separation main body plate.

[0027] The partition plate is a rectangular plate with a width of a35, a length of b18, and a height of h12, where h12<h3. The lower end of the rear surface of the partition plate is chamfered, the chamfer angle is equal to θ1, and the chamfer size is c5. The connecting plate and the upper surface of the partition plate are on the same horizontal plane, the rear surface of the connecting plate is welded to the front surface of the partition plate, the distance from the left end face of the partition plate to the left end face of the connecting plate is s9, and the distance from the right end face of the partition plate to the right end face of the connecting plate is equal to s9, and a35=a0-2*s9.

[0028] The partition plate is composed of a partition upper plate and a partition main body plate, wherein the lower surface of the partition upper plate is welded to the upper surface of the partition main body plate. The partition upper plate is a rectangular plate with a width equal to a35, a length equal to b18, and a height equal to h1. A series of through holes are opened from the upper surface of the partition upper plate to the lower surface, and the through holes have a depth equal to h1, a width of a36, and a length of b23. The through holes are staggered from the left end to the right end of the partition upper plate, and the distances from the through hole closest to the right end face of the partition upper plate to the right end face and the rear end face of the partition upper plate are equal, both equal to s5; the distance from the through hole closest to the left end face of the partition upper plate to the left end face of the partition upper plate is equal to s5, and the distance to the rear end face of the partition upper plate is b21. The distance between the left and right end faces of two adjacent through holes is s11.

[0029] A first rectangular through groove is opened from the front surface to the rear surface of the connecting plate, with a depth equal to b17, a width equal to a5, and a height equal to h4. The distance from the upper surface of the first rectangular through groove to the upper surface of the connecting plate is equal to h1; the distance from the lower surface of the first rectangular through groove to the lower surface of the connecting plate is equal to h2; the distance from the left end face of the first rectangular through groove to the left end face of the connecting plate is equal to s2; and the distance from the right end face of the first rectangular through groove to the right end face of the connecting plate is equal to s2.

[0030] The separation main board is a rectangular cuboid board, with a width equal to a35, a length equal to b18, and a height of h13. The lower end of the rear surface is chamfered, the chamfer angle is equal to θ1, and the chamfer size is equal to c5. There are two types of grooves in the separation main board, namely large grooves and small grooves, both of which are grooves opened from the upper surface of the separation main board to the lower surface, and the depth is equal to h4. The distance from the right end face of the large groove closest to the right end face of the separation main board to the right end face of the separation main board is equal to s5; the distance from the left end face of the large groove closest to the left end face of the separation main board to the left end face of the separation main board is equal to s10; the distance from the right end face of the small groove closest to the right end face of the separation main board to the right end face of the separation main board is equal to s10; the distance from the left end face of the small groove closest to the left end face of the separation main board to the left end face of the separation main board is equal to s5; the large grooves and small grooves are arranged alternately, and the distance between the left end face of the adjacent large groove and the right end face of the small groove is equal to s11; the distance from the rear surface of the large groove to the rear end face of the separation main board is equal to s5. The two ends of the front surface of the large groove are rounded, and the chamfer radius is equal to r7; the two ends of the front surface of the small groove are rounded, and the chamfer radius is equal to r7. The depth of the large groove is equal to h4, the width is a36, the length is b19, the rear surface of the large groove is chamfered, the chamfer angle is equal to θ1, and the chamfer size is c6.

[0031] The depth of the small groove is equal to h4, the width is equal to a36, the length is b20 (b20 < b19), the rear surface of the small groove is chamfered, the chamfer angle is equal to θ1, and the chamfer size is equal to c6; the distance from the rear surface of the small groove to the rear surface of the separation main board is b21.

[0032] The flange is composed of a flange bottom plate, a flange middle plate, and a flange upper plate. The upper surface of the flange bottom plate and the lower surface of the flange middle plate are welded together, and the upper surface of the flange middle plate and the lower surface of the flange upper plate are welded together; the center points of the flange bottom plate, the flange middle plate, and the flange upper plate coincide. The flange bottom plate is a rectangular cuboid board, with a width of a37, a length of b22, and a height of h14; a second rectangular through groove is opened from the lower surface of the flange bottom plate to the upper surface of the flange bottom plate, with a depth equal to h14, a width equal to a36, and a length equal to b23, and the center point of the second rectangular through groove coincides with the center point of the flange bottom plate.

[0033] The flange middle plate is a rectangular cuboid board, with a width of a39, a length of b25, and a height equal to h8; the lower surface of the flange middle plate is flat-welded on the upper surface of the flange bottom plate; a third rectangular through groove is opened from the lower surface of the flange middle plate to the upper surface, with a depth equal to h8, a width of a38, and a length of b24; the center point of the third rectangular through groove coincides with the center point of the flange middle plate.

[0034] The flange upper plate is a rectangular plate with a width of a40, a length of b25, and a height of h15. A fourth rectangular through-slot is opened from the lower surface of the flange upper plate to the upper surface, with a depth of h15, a width of d, and a length of s10. The center point of the fourth rectangular through-slot coincides with the center point of the flange upper plate. The lower surfaces of the flange bottom plates of the N flanges are welded to the upper surface of the partition plate, and the second rectangular through-slots of the N flanges are connected to the through holes respectively. The length of the second rectangular through-slot is equal to the length of the through hole (i.e., b23), and the width of the second rectangular through-slot is equal to the width of the through hole, the width of the large groove, and the width of the small groove (i.e., a36). The length of the fourth rectangular through-slot is equal to the length of the vertical waveguide of the curved waveguide, and the width of the fourth rectangular through-slot is equal to the width of the vertical waveguide. The vertical waveguide is inserted into the fourth rectangular through-slot and fixed, and the insertion depth is equal to the depth h15 of the fourth rectangular through-slot.

[0035] The curved waveguide is composed of a vertical waveguide and a horizontal waveguide that are perpendicular to each other. The vertical waveguide is a rectangular plate with a width equal to d, a length equal to s10, and a height equal to h18; the horizontal waveguide is a rectangular plate with a width equal to d, a length equal to b25, and a height equal to s10. The rear end of the upper surface of the horizontal waveguide is chamfered, and the chamfer angle is equal to θ1, and the chamfer size is c7. The vertical waveguide has a fifth rectangular through groove from the lower surface to the upper surface, with a depth of h16, a width equal to a38, and a length equal to b26; the distances from the front, rear, left, and right end faces of the fifth rectangular through groove to the front, rear, left, and right end faces of the vertical waveguide are equal, and are all equal to s17. A sixth rectangular through groove is opened from the front surface to the rear surface of the horizontal waveguide, with a depth of b27, a width equal to a38, and a height equal to b26. The rear end of the upper surface of the sixth rectangular through groove is rounded, and the chamfer radius is r14. The distances from the upper, lower, left and right end faces of the sixth rectangular through groove to the upper, lower, left and right end faces of the horizontal waveguide are equal, and are all equal to s17; the distance from the rear end face of the sixth rectangular through groove to the rear surface of the horizontal waveguide is equal to s17.

[0036] The lower surface of the flange lower plate of the flange is welded to the upper surface of the partition plate of the partition waveguide, each flange corresponds to a through hole, and the center point of the second rectangular through slot coincides with the center point of the through hole. The distance between adjacent flanges is 0, and the left end face of the flange is connected to the right end face of the adjacent left flange; the distance from the left end face of the flange bottom plate of the flange at the leftmost end of the partition plate to the left end face of the partition plate is equal to s18, and the distance from the right end face of the flange bottom plate of the flange at the rightmost end of the partition plate to the right end face of the partition plate is equal to s18. The vertical waveguides of the N curved waveguides are respectively inserted into the fourth rectangular through slots of the N flange upper plates, and the insertion depth is equal to the height h15 of the flange upper plate.

[0037] The rectangular waveguide slot antenna with dielectric cover is composed of a dielectric cover, a slotted waveguide, a support column and a support rod. The dielectric cover completely wraps the slotted waveguide, and the support column and the support rod are located between the dielectric cover and the slotted waveguide. The invention is defined as follows: the end close to the microwave source is the input end, and the end away from the microwave source is the output end; the open end of the dielectric cover is connected to the curved waveguide as the input port of the high-power waveguide slot array antenna with dielectric cover, and the other end is a closed structure. The dielectric cover is composed of a front cover, a main body cover, and a rear cover. The front cover is located at the front end face of the main body cover, and the rear cover is located at the rear end face of the main body cover. The front cover and the rear cover seal the main body cover. The front cover, the main body cover, and the rear cover are all made of fiberglass. The dielectric cover is a closed structure. The dielectric cover is evacuated and filled with sulfur hexachloride gas.

[0038] The slotted waveguide is connected to the front cover by rivets.

[0039] The slotted waveguide consists of a rectangular bottom plate, two rectangular middle plates, and a rectangular upper plate, all of which are made of metal. The rectangular bottom plate, two rectangular middle plates, and a rectangular upper plate together form a rectangular channel; for ease of description, the central axis XX' of the rectangular channel is drawn along the input to output direction, with point X on the input end face and point X' on the back cover; the longitudinal axis ZZ' is drawn through point X on the input end face, ZZ' is perpendicular to the rectangular bottom plate, the end away from the rectangular bottom plate, i.e., the Z end, is the upper end, and the end close to the rectangular bottom plate, i.e., the Z' end, is the lower end; the transverse axis YY' is drawn through point X on the input end face, the transverse axis YY' is perpendicular to the longitudinal axis ZZ', with the Y end being the left end and the Y' end being the right end. In order to prevent the appearance of grating lobes in the far-field radiation pattern, the width a41 of the slotted waveguide should be less than the free space wavelength.

[0040] The rectangular bottom plate is a cuboid plate with a width equal to a41, a height equal to h19, and a length equal to b29. The lower surfaces of the two rectangular middle plates are welded to the left and right ends of the upper surface of the rectangular bottom plate along the central axis XX', symmetrically about the central axis XX'; the rectangular middle plate is a cuboid plate with a width of a42, a height equal to b26, and a length equal to b29. The lower surface of the rectangular upper plate is welded flat on the upper surfaces of the two rectangular middle plates along the central axis XX'; the rectangular upper plate is a cuboid plate with a width equal to a41, a height equal to h9, and a length equal to b29. The rectangular bottom plate, the two rectangular middle plates, and the rectangular upper plate together form a rectangular channel. The surfaces of the rectangular bottom plate, the two rectangular middle plates, and the rectangular upper plate close to the axis XX' are the inner surfaces; the width of the rectangular channel is equal to a38, the height is equal to b26, and the length is equal to b29, and a38=a41-2*a42.

[0041] The rectangular upper plate is provided with waveguide slots along the ZZ' direction; the waveguide slots are rectangular, there are K in total, the length is b34, the width is equal to a41, and the angle with the YY' axis is θ5. On the rectangular upper plate, the right end of the waveguide slot closest to X is deflected away from the X direction by θ5, and the next waveguide slot is deflected close to the X direction by θ5, and they are staggered on the rectangular upper plate; the waveguide slots are slotted from the upper surface of the rectangular upper plate to the direction close to the rectangular bottom plate, the slot depth is c9, c9>h9, and the waveguide slots connect the upper surface of the rectangular upper plate and the rectangular channel; the axial spacing between adjacent waveguide slots is b32, the axial spacing between the waveguide slot closest to the front cover and the slotted waveguide end face close to X is s23, and the axial spacing between the waveguide slot closest to the rear cover and the slotted waveguide end face close to X' is equal to s23.

[0042] The support columns are cylindrical columns made of fiberglass, with a total of N6, a diameter of c8, and a height of h25; the N6 support columns are distributed along the central axis XX' direction and fixed to the upper surface of the rectangular upper plate with screws; the axial spacing between adjacent support columns is b33, and the axial spacing from the support column closest to the rear cover to the rear cover is s24.

[0043] The main cover consists of a rectangular bottom cover plate, two rectangular middle cover plates, and a rectangular upper cover plate, all of which are made of glass fiber reinforced plastic. The rectangular bottom cover plate is welded symmetrically on the lower surface of the rectangular bottom plate about the XX' axis; the rectangular bottom cover plate is a rectangular plate with a width of a43, a height of h20, and a length of b30; the two rectangular middle cover plates are welded symmetrically on the left and right ends of the upper surface of the rectangular bottom cover plate about the central axis XX'; the rectangular middle cover plate is a rectangular plate with a width of a44, a height of h21, and a length of b30; the rectangular upper cover plate is welded flat on the upper surface of the two rectangular middle cover plates, and the rectangular upper cover plate is a rectangular plate with a width of a43, a height of h9, and a length of b30. The surfaces of the rectangular bottom cover plate, the two rectangular middle cover plates, and the rectangular upper cover plate close to the axis XX' are the inner surfaces; the connection between the rectangular bottom cover plate and the two rectangular middle cover plates is rounded, the inner surface chamfer radius is r12, and the outer surface chamfer radius is r7; the connection between the rectangular upper cover plate and the two rectangular middle cover plates is rounded, the inner surface chamfer radius is r2, and the outer surface chamfer radius is r15. The distance between the inner surface of the rectangular middle cover plate and the outer surface of the adjacent rectangular middle plate is a45, 2*a45+2*a44+a41=a43.

[0044] The dotted line indicates the invisible structural line. The front cover is a convex metal cuboid with a width equal to a43, a height of h22, and a thickness of s22. Four rectangular grooves are dug from the edge to the direction close to the central axis XX' in the four directions of top, bottom, left, and right on the end face of the front cover away from X. The rectangular groove near Z' below is the third groove, and the width of the third groove is equal to the width a43 of the rectangular bottom cover plate, and the height of the third groove is equal to the height h20 of the rectangular bottom cover plate; the rectangular groove near Y on the left is the fourth groove, and the width of the fourth groove is equal to the width a44 of the rectangular middle cover plate, and the height of the fourth groove is equal to the height h21 of the rectangular middle cover plate; the rectangular groove near Y' on the left is the fifth groove, and the width of the fifth groove is equal to the width a44 of the rectangular middle cover plate, and the height of the fifth groove is equal to the height h21 of the rectangular middle cover plate; the rectangular groove near Z on the top is the sixth groove, and the width of the sixth groove is equal to the width a43 of the rectangular upper cover plate, and the height of the sixth groove is equal to h9; the depths of the third groove, the fourth groove, the fifth groove and the sixth groove are equal, all s 9; the third groove, the fourth groove, the fifth groove and the sixth groove are connected to each other; the third groove and the fourth groove are connected at the connection, the inner side chamfer radius close to X is equal to r12, and the outer side chamfer radius away from X is equal to r7; the third groove and the fifth groove are connected at the connection, the inner side chamfer radius close to X is equal to r12, and the outer side chamfer radius away from X is equal to r7; the sixth groove and the fourth groove are connected at the connection, the inner side chamfer radius close to X is equal to r2, and the outer side chamfer radius away from X is equal to r15; the sixth groove and the fifth groove are connected at the connection, the inner side chamfer radius close to X is equal to r2, and the outer side chamfer radius away from X is equal to r15; the front cover is dug with a rectangular through groove from the microwave input end face along the central axis XX' direction, connecting the rectangular channel; the width of the rectangular through groove is equal to the width a38 of the rectangular channel, the height of the rectangular through groove is equal to the height b26 of the rectangular channel, and the depth is equal to s22. The distance between the lower surface of the rectangular through slot and the lower surface of the front cover is s6, s6 = h19 + h20; the distance between the upper surface of the rectangular through slot and the upper surface of the front cover is s19, s19 = h9 + h25 + h9; the distance between the left surface of the rectangular through slot and the left surface of the front cover is a46, a46 = a42 + a44 + a45; the distance between the right surface of the rectangular through slot and the right surface of the front cover is equal to a46. The end surface of the front cover away from X is fixedly connected to the end surface of the rectangular bottom cover plate, the rectangular middle cover plate, and the rectangular upper cover plate of the main cover close to X by screws. The front surface of the front cover is welded to the front surface of the horizontal waveguide in the curved waveguide, wherein the height of the rectangular through slot is equal to the height of the sixth rectangular through slot (equal to b26), the width is equal to the width of the sixth rectangular through slot (equal to a38), and the height of the rectangular through slot coincides with the center point of the sixth rectangular through slot and is connected to each other.

[0045] The dotted lines represent invisible structural lines. The rear cover is a convex metal cuboid with a width equal to a43, a height equal to h22, and a thickness equal to s22. The rear cover has four rectangular grooves dug from the edge to the direction close to the central axis XX' in the four directions of top, bottom, left, and right on the end face away from X'. The rectangular groove near Z' below the rear cover is the seventh groove, and the width of the seventh groove is equal to the width a43 of the rectangular bottom cover plate, and the height of the seventh groove is equal to the height h20 of the rectangular bottom cover plate; the rectangular groove near Y on the right is the eighth groove, and the width of the eighth groove is equal to the width a44 of the rectangular middle cover plate, and the height of the eighth groove is equal to the height h21 of the rectangular middle cover plate; the rectangular groove near Y' on the right is the ninth groove, and the width of the ninth groove is equal to the width a44 of the rectangular middle cover plate, and the height of the ninth groove is equal to the height h21 of the rectangular middle cover plate; the rectangular groove near Z on the top is the tenth groove, and the width of the tenth groove is equal to the width a43 of the rectangular upper cover plate, and the height of the tenth groove is equal to h9; the seventh groove, the eighth groove, the The depths of the ninth groove and the tenth groove are equal, both equal to s9; the seventh groove, the eighth groove, the ninth groove and the tenth groove are connected to each other; the seventh groove and the eighth groove are rounded at the connection, the inner side chamfer radius close to X' is equal to r12, and the outer side chamfer radius away from X' is equal to r7; the seventh groove and the ninth groove are rounded at the connection, the inner side chamfer radius close to X' is equal to r12, and the outer side chamfer radius away from X' is equal to r7; the tenth groove and the eighth groove are rounded at the connection, the inner side chamfer radius close to X' is equal to r2, and the outer side chamfer radius away from X' is equal to r15; the tenth groove and the ninth groove are rounded at the connection, the inner side chamfer radius close to X' is equal to r2, and the outer side chamfer radius away from X' is equal to r15; the axial distance from the rear cover to the end face of the slotted waveguide close to X' is equal to s4, satisfying b30=b29+2*s9+s4. The end face of the rear cover away from X' is fixedly connected with the end faces of the rectangular bottom cover plate, the rectangular middle cover plate and the rectangular upper cover plate of the main cover close to X' through screws.

[0046] The support rod is a rectangular parallelepiped made of glass fiber reinforced plastic material, with a width of a45, a height of h23, and a length of b31. It is located between the rectangular middle plate and the rectangular middle cover plate and is fixed to the rectangular middle plate with screws. There are N7 support rods in total, which are divided into two columns. The number of support rods in each column is equal to N7 / 2. They are symmetrically distributed on the left and right sides of the rectangular middle plate along the central axis XX'. The lateral spacing between the two columns of support rods is equal to a41. The height spacing of the support rods in the same column is s20. The spacing between the support rod closest to the rectangular bottom plate and the lower surface of the rectangular bottom plate is s21. The distance between the support rod closest to the rectangular upper plate and the upper surface of the rectangular upper plate is equal to s21.

[0047] The slotted waveguide radiates the microwaves received from the curved waveguide, and the dielectric cover wraps the slotted waveguide in the dielectric cover. The dielectric cover is filled with sulfur hexachloride gas, which can achieve good airtightness and isolate the slotted waveguide from the external environment. At the same time, it can withstand low temperatures of -50°C and high temperatures of 50°C.

[0048] The front surface of the horizontal waveguide in the curved waveguide is welded to the front surface of the front cover in the dielectric cover. The sixth rectangular through slot has the same height and width as the rectangular through slot, and the upper surface of the sixth rectangular through slot is on the same horizontal plane as the upper surface of the rectangular through slot, the lower surface of the sixth rectangular through slot is on the same horizontal plane as the lower surface of the rectangular through slot, the left surface of the sixth rectangular through slot is on the same vertical plane as the left surface of the rectangular through slot, and the right surface of the sixth rectangular through slot is on the same vertical plane as the right surface of the rectangular through slot.

[0049] The working process of the present invention is:

[0050] The through hole in the waveguide opening of the power divider body 1 in the vacuum window sealed power divider of the present invention is used as an input port to receive the rectangular waveguide TE received from the microwave source. 10 The mode microwave is input into N1 primary power division channels, and then enters N1 primary power division channels through the waveguide port. The primary power division channels divide the rectangular waveguide TE 10 The mode microwave is divided into N2 parts and then input into the secondary power division channel; the secondary power division channel divides the rectangular waveguide TE 10 The mode microwave is divided into N3 parts and then input into the three-level power division channel; the three-level power division channel divides the rectangular waveguide TE 10 The mode microwave is divided into N4 parts and then input into the four-level power division channel; the four-level power division channel divides the rectangular waveguide TE 10 The mode microwave is divided into N parts, rectangular waveguide TE 10 The mode microwaves are transmitted from the N output ports of the power divider body 1 through the rectangle formed by the first rectangular plate, the third rectangular plate, the fifth rectangular plate, and the seventh rectangular plate in the dielectric window, and then through the rectangle formed by the second rectangular plate, the fourth rectangular plate, the sixth rectangular plate, and the eighth rectangular plate in the dielectric window, and then output to the separation waveguide to realize the power distribution of the N waveguides. These N microwave distributions enter the N curved waveguides through the N flanges and enter the N slotted waveguides. The slotted waveguides radiate the microwaves, and the dielectric cover wraps the slotted waveguide in the dielectric cover. The dielectric cover is filled with sulfur hexachloride gas, which can achieve good airtightness, isolate the slotted waveguide from the external environment, and can withstand low temperatures of -50°C and high temperatures of 50°C.

[0051] The welding cover seals the upper surface of the power divider body, ensuring that the input microwave propagates in the power divider body and reducing microwave leakage; the sealing plate further seals the upper surface of the power divider body, thereby further reducing microwave leakage in the power divider body; the eight rectangular plates in the dielectric window ensure that the microwave is bound in the dielectric window for propagation without leakage, ensuring electrical contact while ensuring airtightness, and the dielectric window still ensures airtightness at high and low temperatures, thereby ensuring the normal use of the present invention at high and low temperatures. The triangular prism groove increases the power capacity during power division and power combination.

[0052] For the convenience of description, the conditions satisfied by the structural parameters of the above designs are introduced here:

[0053] 1. The width of the longitudinal part of each level of T-shaped power splitter cavity is equal to the width d of the through hole 1341, and the height is equal to the height h4 of the through hole 1341, which must meet the requirements of the rectangular waveguide TE 10 The microwave mode is divided into two parts, namely, the power distribution satisfies λ 0 / 2 <h4<λ 0 , d<λ 0 / 2,λ 0 is the wavelength in free space. The width of the longitudinal part of each level of T-type power splitter cavity remains consistent and is equal to d. The length of the transverse part of the first-level T-type power splitter cavity 1211, the length of the transverse part of the second-level T-type power splitter cavity 1221, the length of the transverse part of the third-level T-type power splitter cavity 1231 and the width of the through hole 1341 in the waveguide port 134 are all equal and equal to the width d of the longitudinal part of each level of the T-type power splitter cavity;

[0054] 2. In order to adjust impedance and reduce reflection, there is an isosceles trapezoidal structure in each power division channel, among which the first-level power division channel 121, the second-level power division channel 122, and the third-level power division channel 123 are all isosceles trapezoidal structures. As the number of levels increases, the acute internal angles of the isosceles trapezoidal surfaces of the isosceles trapezoidal bodies in the power division channels gradually increase, that is, the acute internal angle θ2 of the first-level trapezoidal body 1212, the acute internal angle θ3 of the second-level trapezoidal body 1222, and the acute internal angle θ4 of the third-level trapezoidal body 1232 satisfy θ2<θ3<θ4.

[0055] 3. After the width d of the longitudinal part of each level of the T-shaped power dividing cavity is determined, the transverse part width a31 of the four-level T-shaped power dividing cavity 1241 is determined first; in order to meet the conditions of microwave lossless transmission and achieve the purpose of reducing reflection, the transverse part width a31 of the four-level T-shaped power dividing cavity 1241, the distance a32 from the left end face of the four-level capsule column 1242 to the left end face of the four-level T-shaped power dividing cavity 1241, the chamfer radius r9 at both ends of the four-level capsule column 1242, and the width a33 of the four-level capsule column 1242 should satisfy a31=r9+d+a33+d+r9, a32=d+r9. According to the number N4 of the four-level T-shaped power dividing cavity 1241, the width a3 of the power dividing filling body 11 can be obtained; the width a3 of the power dividing filling body 11, the number N4 of the four-level T-shaped power dividing cavity 1241, the width a31 of the transverse part of the four-level T-shaped power dividing cavity 1241 and the horizontal distance s4 from the left end face of the transverse part of the four-level T-shaped power dividing cavity 1241 closest to the left longitudinal middle plate 1324 to the right end face of the left longitudinal middle plate 1324 satisfy a3=s4+N4*a31+s4. After the shape and position of the four-stage T-type power division cavity 1241 are determined, since the longitudinal portion of the four-stage T-type power division cavity 1241 is connected to the transverse portion of the three-stage T-type power division cavity 1231, the position of the transverse portion of the three-stage T-type power division cavity 1231 will also be determined, and the three-stage trapezoidal body 1232 separates the transverse portion of the three-stage T-type power division cavity 1231 into two channels, which are respectively connected to the longitudinal portions of two adjacent four-stage T-type power division cavities 1241. Generally, the width of these two channels should also be d, but in order to meet the microwave lossless transmission conditions and to achieve the purpose of reducing reflection, the parameters of the three-stage trapezoidal body 1232 are optimized, and the width of these two channels will deviate from d. Next, the parameters of the two-stage T-type power division cavity 1221, the two-stage trapezoidal body 1222, the one-stage T-type power division cavity 1211 and the one-stage trapezoidal body 1212 are determined in the same way. The length b5 of the longitudinal part of the primary T-shaped power dividing chamber 1211, the width a1 of the transverse part of the primary T-shaped power dividing chamber 1211, the horizontal distance a6 from the left end face of the transverse part of the primary T-shaped power dividing chamber 1211 to the right surface of the left inclined middle plate 1322, the horizontal distance a10 from the left end face of the longitudinal part of the primary T-shaped power dividing chamber 1211 to the left end face of the transverse part of the primary T-shaped power dividing chamber 1211, the length a7 of the long side of the trapezoidal surface of the primary trapezoidal body 1212, the length a8 of the short side of the trapezoidal surface, the height b6 of the trapezoidal surface, the angle θ2 of the acute inner angle, and the a9, the distance from the left end of the rear end face of the body 1212 to the left end of the horizontal part of the first-stage T-shaped power dividing chamber 1211, b7, the length of the longitudinal part of the second-stage T-shaped power dividing chamber 1221, a11, the width of the horizontal part of the second-stage T-shaped power dividing chamber 1221, a12, the horizontal distance from the left end face of the longitudinal part of the second-stage T-shaped power dividing chamber 1221 closest to the left inclined middle plate 1322 to the left end face of the horizontal part of the second-stage T-shaped power dividing chamber 1221, a13, the horizontal distance from the right end face of the longitudinal part of the second-stage T-shaped power dividing chamber 1221 to the right end face of the horizontal part of the second-stage T-shaped power dividing chamber 1221,a14, a horizontal distance from the left end face of the transverse part of the secondary T-shaped power splitting cavity 1221 closest to the left inclined middle plate 1322 to the right surface of the left inclined middle plate 1322; a15, a horizontal distance from the right end face of the transverse part of the secondary T-shaped power splitting cavity 1221 to the left end face of the transverse part of the adjacent secondary T-shaped power splitting cavity 1221 on the right; a16, a length of the long side of the isosceles trapezoidal surface of the secondary trapezoidal body 1222; a17, a height of the trapezoidal surface; b8, an angle of the acute internal angle θ3; a18, a distance from the left end of the rear end face of the secondary trapezoidal body 1222 closest to the left inclined middle plate 1322 to the left end face of the transverse part of the secondary T-shaped power splitting cavity 1221; a a19, a horizontal distance from the right end of the rear end face of the secondary trapezoidal body 1222 to the left end of the rear end face of the adjacent secondary trapezoidal body 1222 on the right, a21, a horizontal distance from the left end face of the tertiary T-shaped power dividing cavity 1231 to the left end face of the tertiary T-shaped power dividing cavity 1231, a22, a horizontal distance from the left end face of the longitudinal part of the tertiary T-shaped power dividing cavity 1231 closest to the left inclined middle plate 1322 to the left end face of the tertiary T-shaped power dividing cavity 1231, a23, a horizontal distance from the right end face of the longitudinal part of the tertiary T-shaped power dividing cavity 1231 closest to the left inclined middle plate 1322 to the right end face of the tertiary T-shaped power dividing cavity 1231, and a24, a horizontal distance from the left end face of the tertiary T-shaped power dividing cavity 1231 to the right end face of the tertiary T-shaped power dividing cavity 1231. a24, a horizontal distance from the left end face of the left inclined middle plate 1322, a25, a horizontal distance from the right end face of the transverse part of the three-stage T-shaped power splitting cavity 1231 to the left end face of the transverse part of the adjacent three-stage T-shaped power splitting cavity 1231 on the right, a26, a length of the long side of the isosceles trapezoidal surface of the three-stage trapezoidal body 1232, a27, a height of the isosceles trapezoidal surface b9, an angle of the acute internal angle θ4, a distance from the left end of the rear end face of the three-stage trapezoidal body 1232 closest to the left inclined middle plate 1322 to the left end face of the transverse part of the three-stage T-shaped power splitting cavity 1231 a28, a distance from the right end of the rear end face of the three-stage trapezoidal body 1232 closest to the left inclined middle plate 1322 to the right end face of the transverse part of the three-stage T-shaped power splitting cavity 1231 a29, a distance from the right end of the rear end face of the three-stage trapezoidal body 1232 closest to the left inclined middle plate 1322 to the right end face of the transverse part of the three-stage T-shaped power splitting cavity 1231 a30, a horizontal distance between the right end of the rear end face of the body 1232 and the left end of the rear end face of the adjacent third-level trapezoidal body 1232 on the right; a31, a length b10, a longitudinal length b11, a horizontal distance c4, a left end face of the longitudinal part of the fourth-level T-shaped power dividing cavity 1241 to the left end face of the transverse part of the fourth-level T-shaped power dividing cavity 1241; a horizontal distance s4, a distance a32, a left end face of the transverse part of the fourth-level T-shaped power dividing cavity 1241 closest to the left longitudinal middle plate 1324 to the right end face of the left longitudinal middle plate 1324; a33, a length b12, a distance a34, a width a35, a length b13, a distance b14, a distance b15, a distance c16, a distance c27, a distance c38, a distance b39, a distance b40, a distance b41, a distance b42, a distance b43, a distance b44, a distance b45, a distance b46, a distance b47, a distance b48, a distance b49, a distance b50, a distance b51, a distance b52, a distance b53, a distance b54, a distance b55, a distance b56, a distance b57, a distance b58, a distance b59, a distance b60, a distance b61, a distance b62, a distance b63, a distance b64, a distance b65, a distance b66, a distance b67, a distance b68, a distance b69, a distance b70, a distance b71, a distance b72, a distance b73, a distance b74, a distance b75The distance b13 from the front end of the fourth-stage capsule column 1242 to the front end of the longitudinal part of the fourth-stage T-shaped power splitting cavity 1241, and the horizontal distance a34 from the right end of the fourth-stage capsule column 1242 to the left end of the fourth-stage capsule column 1242 adjacent to the right need to achieve a one-to-two power distribution when designing, and also ensure that the rectangular waveguide TE, 10 mode microwave transmission, and minimize the transmission of higher-order modes, while satisfying a1=a9+a7+a9=a10+d+a10, a11=a16+a18+a19=a12+d+a13, a20=a19+a15+a19, a34=a32+a32, a21=a22+d+a23=a28+a26+a29, a30=a29+a25+a29, a31=c4+d+c4=a33+a32+a33, 0°<θ2<θ3<θ4<90°, b10 >b13>b12>b11>b6>b7>b8>b5, a1>a20>a11>a10>a9>a15>a30>a21>a12>a31>a13>a19>a34>a18>a6>a7>a25>a16>a22>a26>a23>a29>a32>a28>d>a24>c4>a14>a33>a17>a27>a8>s4, under the conditions, the transmission efficiency of the power divider is set to be greater than 99%, using the electromagnetic simulation software CST Studio Suit optimizes and obtains accurate values ​​for d, a1, a6, a7, a8, a9, a10, a11, a12, a13, a14, a15, a16, a17, a18, a19, a20, a21, a22, a23, a24, a25, a26, a27, a28, a29, a30, a31, a32, a33, a34, c4, s4, b5, b6, b7, b8, b9, b10, b11, b12, b13, θ2, θ3, θ4, and h4.

[0056] 4. The chamfer angles of the left and right ends of the horizontal parts of the power distribution channels of each level are equal to the chamfer angles θ1 of the left and right ends of the front surface of the bottom plate 131 of the housing, the chamfer dimensions c2 of the first-level T-shaped power distribution cavity 1211 and the second-level T-shaped power distribution cavity 1221, the chamfer dimensions c3 of the third-level T-shaped power distribution cavity 1231, the chamfer dimensions c4 of the fourth-level T-shaped power distribution cavity 1241, the chamfer radius r1 of the connection between the right end face of the horizontal middle plate 1321 and the left end face of the right inclined middle plate 1323, the chamfer radius r2 of the connection between the rear end face of the waveguide port 134 and the horizontal middle plate 13 21 connection chamfer radius r2, the connection chamfer radius r3 of the front end face of the horizontal part of the first-stage T-shaped power splitting cavity 1211 and the rear end face of the longitudinal part of the first-stage T-shaped power splitting cavity 1211, the connection chamfer radius r4 of the first-stage T-shaped power splitting cavity 1211 chamfer and the left end face of the horizontal part of the first-stage T-shaped power splitting cavity 1211, the connection chamfer radius r5 of the inclined surface of the first-stage trapezoidal body 1212 and the front end face, the connection chamfer radius r6 of the left inclined surface of the second-stage trapezoidal body 1222 and the front end face, the connection chamfer radius r7 of the third-stage T-shaped power splitting cavity The chamfer radius of the connection between the front end face of the transverse part of the 1231 and the rear end face of the longitudinal part of the three-stage T-shaped power splitting cavity 1231 is r7, the chamfer radius of the connection between the front end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 and the rear end face of the longitudinal part of the four-stage T-shaped power splitting cavity 1241 is r8, and the plane parallel to the left end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 and the distance from the left end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 is r9, and the chamfer radius of the plane parallel to the left end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 and the left end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 is r9. The radius of the chamfer r9, the radius of the chamfer r10 of the right end of the front end surface of the longitudinal part of the four-stage T-shaped power splitting cavity 1241 closest to the left longitudinal middle plate 1324, the radius of the chamfer r11 of the left and right ends of the lower surface of the first groove 1311, and the radius of the chamfer r12 of the upper and lower ends of the rectangular through groove all meet the microwave lossless transmission conditions to achieve the purpose of reducing reflection, and r6>r3>r11>r1>r9>r2>r10>r5>r7>r4>r8>r12, c1>c2>c4>c3,Generally, θ1 = 45°. The chamfer radius at the connection between the right end face of the horizontal middle plate 1321 and the left end face of the right inclined middle plate 1323, the chamfer radius at the connection between the left end face of the horizontal middle plate 1321 and the right end face of the left inclined middle plate 1322, the chamfer radius at the connection between the left end face of the left inclined middle plate 1322 and the front end face of the left longitudinal middle plate 1324, the chamfer radius at the connection between the right end face of the right inclined middle plate 1323 and the front end face of the right longitudinal middle plate 1325, the chamfer radius at the connection between the left end face of the upper plate 133 of the housing and the right end face of the left longitudinal middle plate 1324 away from O', and the secondary T-shaped power splitter cavity 12 The chamfer radius of the connection between the front end face of the horizontal part 21 and the rear end face of the longitudinal part of the secondary T-shaped power splitting cavity 1221, the chamfer radius of the left and right ends of the rear surface of the sealing plate 3, the chamfer radius of the connection between the chamfer of the sealing plate 3 and the left and right ends of the front surface of the sealing plate 3, the chamfer radius of the connection between the left chamfer of the sealing plate 3 and the left end face of the sealing plate 3, the chamfer radius of the connection between the right chamfer of the sealing plate 3 and the right end face of the sealing plate 3, the chamfer radius of the connection between the left end face of the horizontal middle plate 1321 and the right end face of the left-inclined middle plate 1322, and the chamfer radius of the right end face of the horizontal middle plate 1321 The inner surface chamfer radius of the left end surface of the middle plate 1323, the inner surface chamfer radius of the left end surface of the left inclined middle plate 1322 and the front end surface of the left longitudinal middle plate 1324, and the inner surface chamfer radius of the right end surface of the right inclined middle plate 1323 and the front end surface of the right longitudinal middle plate 1325 are the same, all equal to r1; the outer surface chamfer radius of the connection between the rear end surface of the waveguide port 134 and the front end surface of the horizontal middle plate 1321, and the chamfer radius of both ends of the upper surface of the second groove 1331 are the same, all equal to r2; the front end surface of the horizontal part of the first-stage T-shaped power splitter cavity 1211 The same as the chamfer radius at both ends of the connection between the rear end face of the longitudinal part of the first-stage T-shaped power splitting cavity 1211, the chamfer radius at one end of the front end face of the longitudinal part of the second-stage T-shaped power splitting cavity 1221 that is closer to the left and right end faces of the transverse part of the second-stage T-shaped power splitting cavity 1221, the chamfer radius at one end of the front end face of the longitudinal part of the third-stage T-shaped power splitting cavity 1231 that is closer to the left and right end faces of the transverse part of the third-stage T-shaped power splitting cavity 1231, the chamfer radius at the connection between the left inclined surface and the front end face of the third-stage trapezoidal body 1232, and the chamfer radius at the connection between the right inclined surface and the front end face of the third-stage trapezoidal body 1232.are all equal to r3; the chamfer radius of the connection between the left chamfer of the primary T-shaped power dividing cavity 1211 and the left end face of the horizontal part of the primary T-shaped power dividing cavity 1211, the chamfer radius of the connection between the right chamfer of the primary T-shaped power dividing cavity 1211 and the right end face of the horizontal part of the primary T-shaped power dividing cavity 1211, the chamfer radius of the connection between the chamfer of the primary T-shaped power dividing cavity 1211 and the front end face of the horizontal part of the primary T-shaped power dividing cavity 1211, the chamfer radius of the connection between the rear end face of the primary trapezoidal body 1212 and the rear end face of the horizontal part of the primary T-shaped power dividing cavity 1211, the chamfer radius of the connection between the left chamfer of the secondary T-shaped power dividing cavity 1221 and the left end face of the horizontal part of the secondary T-shaped power dividing cavity 1221, the right chamfer of the secondary T-shaped power dividing cavity 1221 The chamfer radius of the connection between the angle and the right end face of the horizontal part of the secondary T-shaped power dividing cavity 1221, the chamfer radius of the connection between the chamfered angle of the secondary T-shaped power dividing cavity 1221 and the two ends of the front surface of the horizontal part of the secondary T-shaped power dividing cavity 1221, the chamfer radius of the connection between the rear end face of the secondary trapezoidal body 1222 and the rear end face of the horizontal part of the secondary T-shaped power dividing cavity 1221, the chamfer radius of the connection between the left chamfered angle of the tertiary T-shaped power dividing cavity 1231 and the left end face of the horizontal part of the tertiary T-shaped power dividing cavity 1231, the chamfer radius of the connection between the right chamfered angle of the tertiary T-shaped power dividing cavity 1231 and the right end face of the horizontal part of the tertiary T-shaped power dividing cavity 1231, the chamfer radius of the connection between the chamfered angle of the tertiary T-shaped power dividing cavity 1231 and the two ends of the front surface of the horizontal part of the tertiary T-shaped power dividing cavity 1231 The chamfer radius at the connection, the chamfer radius at both ends of the connection between the rear end face of the third-level trapezoidal body 1232 and the rear end face of the horizontal part of the third-level T-shaped power splitting cavity 1231, the chamfer radius at the intersection of the chamfer of the fourth-level T-shaped power splitting cavity 1241 closest to the left longitudinal middle plate 1324 and the left longitudinal middle plate 1324, and the chamfer radius at the intersection of the chamfer of the fourth-level T-shaped power splitting cavity 1241 closest to the right longitudinal middle plate 1325 and the right longitudinal middle plate 1325 are the same, all equal to r4; the chamfer radius at the connection between the left inclined surface and the front end face of the first-level trapezoidal body 1212, and the chamfer radius at the connection between the right inclined surface and the front end face of the first-level trapezoidal body 1212 are the same, all equal to r5; the chamfer radius at the connection between the left inclined surface and the front end face of the second-level trapezoidal body 1222, The chamfer radius at the connection between the right inclined surface and the front end surface of the trapezoidal body 1222 is the same, both equal to r6; the chamfer radius at both ends of the connection between the front end surface of the transverse part of the three-stage T-shaped power dividing cavity 1231 and the rear end surface of the longitudinal part of the three-stage T-shaped power dividing cavity 1231, the chamfer radius at the intersection of the plane parallel to the left end surface of the transverse part of the four-stage T-shaped power dividing cavity 1241 and the distance to the left end surface of the transverse part of the four-stage T-shaped power dividing cavity 1241 is equal to r9, and the left chamfer radius of the four-stage T-shaped power dividing cavity 1241 is the same,are all equal to r7; the chamfer radius at the intersection of a plane parallel to the left end face of the horizontal part of the four-stage T-shaped power dividing cavity 1241 and the left end face of the horizontal part of the four-stage T-shaped power dividing cavity 1241 at a distance equal to r9, the chamfer radius at the intersection of a plane parallel to the right end face of the horizontal part of the four-stage T-shaped power dividing cavity 1241 and the right end face of the horizontal part of the four-stage T-shaped power dividing cavity 1241 at a distance equal to r9, and the chamfer radius at both ends of the four-stage capsule column 1242 are the same, all equal to r9; the chamfer radius of the right end of the front end face of the longitudinal part of the four-stage T-shaped power dividing cavity 1241 closest to the left longitudinal middle plate 1324, the chamfer radius of the right end of the front end face of the longitudinal part of the four-stage T-shaped power dividing cavity 1241 closest to the right longitudinal middle plate 1325 The chamfer radius of the left end of the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity 1241, the chamfer radius of the left end of the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity 1241 that is second closest to the left longitudinal middle plate 1324, and the chamfer radius of the right end of the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity 1241 that is second closest to the right longitudinal middle plate 1325 are the same, all equal to r10; the chamfer radius of the upper and lower ends of the left rectangular through slot 431, the chamfer radius of the upper and lower ends of the fifth rectangular plate 425, the chamfer radius of the upper and lower ends of the sixth rectangular plate 426, the chamfer radius of the upper and lower ends of the right rectangular through slot 432, the chamfer radius of the upper and lower ends of the seventh rectangular plate 427, and the chamfer radius of the upper and lower ends of the eighth rectangular plate 428 are the same, all equal to r12. ,

[0057] 5. There are N4 four-stage T-type power dividing cavities 1241, and the relationship with the number of output ports N satisfies N=N4*2; there are N3 three-stage T-type power dividing cavities 1231, and the relationship with the number of four-stage T-type power dividing cavities 1241 N4 satisfies N4=N3*2; there are N2 two-stage T-type power dividing cavities 1221, and the relationship with the number of three-stage T-type power dividing cavities 1231 N3 satisfies N3=N2*2; there are N1 one-stage T-type power dividing cavities 1211, and the relationship with the number of two-stage T-type power dividing cavities 1221 N2 satisfies N2=N1*2.

[0058] 6. The height of the housing bottom plate 131 and the distance from the lower surface of the through hole 1341 to the lower surface of the waveguide port 134 are the same, which are equal to h1; the height of the housing upper plate 133 and the distance from the upper surface of the through hole 1341 to the upper surface of the waveguide port 134 are the same, which are equal to h2; the height of the horizontal middle plate 1321, the height of the left inclined middle plate 1322, the height of the right inclined middle plate 1323, the height of the left longitudinal middle plate 1324, the height of the right longitudinal middle plate 1325, the height of the waveguide port 134, and the height of the dielectric window 4 are the same, which are equal to h3; the height of the through hole 1341, the height of the power division filling body 11, the depth of the primary T-shaped power division cavity 1211, the height of the primary trapezoidal body 1212, the depth of the secondary T-shaped power division cavity 1221, the height of the secondary trapezoidal body 1222, the depth of the tertiary T-shaped power division cavity 1231, the height of the tertiary trapezoidal body The height of 1232, the depth of the four-stage T-shaped power splitter cavity 1241, the height of the four-stage capsule column 1242, and the height of the triangular prism groove 44 are the same, all equal to h4; the depth of the second groove 1331 is equal to the height of the sealing plate 3, and are equal to h6; the height of the first rectangular groove 411, the height of the second rectangular groove 412, the height of the third rectangular groove 413, the height of the fourth rectangular groove 414, the height of the first rectangular plate 421, the height of the second rectangular plate 422, the height of the third rectangular plate 423 and the height of the fourth rectangular plate 424 are the same, and are equal to h9; the height of the left rectangular through groove 431, the height of the fifth rectangular plate 425, the height of the sixth rectangular plate 4264, the height of the right rectangular through groove 4324, the height of the seventh rectangular plate 427, and the height of the eighth rectangular plate 428 are the same, and are equal to h11.

[0059] 7. The width of the bottom plate 131 of the housing, the width of the upper plate 133 of the housing, the width of the power divider filling body 11, the width of the welding cover 2, and the width of the sealing plate 3 are the same, all equal to a3; the width of the first groove 1311, the width of the second groove 1331, the width of the first rectangular groove 411, the width of the second rectangular groove 412, the width of the third rectangular groove 413, the width of the fourth rectangular groove 414, the width of the first rectangular plate 421, the width of the second rectangular plate 422, the width of the third rectangular plate 423, and the width of the fourth rectangular plate 424 are the same, all equal to a5; the horizontal distance from the left end face of the transverse part of the primary T-shaped power divider cavity 1211 to the right surface of the left inclined middle plate 1322, the horizontal distance from the left end face ... The horizontal distances from the right end face of the transverse part of the first-stage trapezoidal body 1212 to the left surface of the right inclined middle plate 1323 are the same, both equal to a6; the distance from the left end of the rear end face of the first-stage trapezoidal body 1212 to the left end of the transverse part of the first-stage T-shaped power dividing chamber 1211, and the distance from the right end of the rear end face of the first-stage trapezoidal body 1212 to the right end of the transverse part of the first-stage T-shaped power dividing chamber 1211 are the same, both equal to a9; the horizontal distance from the left end face of the longitudinal part of the first-stage T-shaped power dividing chamber 1211 to the left end face of the transverse part of the first-stage T-shaped power dividing chamber 1211, and the horizontal distance from the right end face of the longitudinal part of the first-stage T-shaped power dividing chamber 1211 to the right end face of the transverse part of the first-stage T-shaped power dividing chamber 1211 are the same, both equal to a10; the transverse part of the second-stage T-shaped power dividing chamber 1221 closest to the left inclined middle plate 1322 The horizontal distance from the left end face of the fourth-stage capsule column 1242 to the left end face of the fourth-stage T-shaped power dividing cavity 1241, and the horizontal distance from the right end face of the transverse part of the fourth-stage T-shaped power dividing cavity 1241 closest to the right-tilted middle plate 1323 to the left surface of the right-tilted middle plate 1323 are the same, both equal to a14; the horizontal distance from the left end face of the transverse part of the third-stage T-shaped power dividing cavity 1231 closest to the left-tilted middle plate 1322 to the left end face of the left-tilted middle plate 1322, and the horizontal distance from the right end face of the transverse part of the third-stage T-shaped power dividing cavity 1231 closest to the right-tilted middle plate 1323 to the right end face of the right-tilted middle plate 1323 are the same, both equal to a24; the distance from the left end face of the fourth-stage capsule column 1242 to the left end face of the fourth-stage T-shaped power dividing cavity 1241, and the horizontal distance from the left end face of the fourth-stage capsule column 1241 to the left end face of the fourth-stage T-shaped power dividing cavity 1241 are the same, both equal to a14. The distance from the right end face of 42 to the right end face of the fourth-level T-shaped power dividing cavity 1241 is the same, both equal to a32; the length of the bottom plate 131 of the shell is the same as the length of the power dividing filling body 11, both equal to b1; the length of the left longitudinal middle plate 1324 is the same as the length of the right longitudinal middle plate 1325, both equal to b2; the length of the upper plate 133 of the shell is the same as the depth of the through hole 1341, both equal to b3; the length of the longitudinal part of the secondary T-shaped power dividing cavity 1221 is the same as the length of the longitudinal part of the tertiary T-shaped power dividing cavity 1231, both equal to b7; the length of the welding cover 2 is the same as the length of the sealing plate 3, both equal to b14; the length of the dielectric window 4, the depth of the left rectangular through groove 431, and the depth of the right rectangular through groove 432 are the same, all equal to b15;The length of the fifth rectangular plate 425, the length of the sixth rectangular plate 426, the length of the seventh rectangular plate 427, and the length of the eighth rectangular plate 428 are the same, all equal to b16; the thickness of the horizontal middle plate 1321, the thickness of the left inclined middle plate 1322, the thickness of the right inclined middle plate 1323, the thickness of the left longitudinal middle plate 1324, the thickness of the right longitudinal middle plate 1325, the distance from the rear end face of the first groove 1311 to the rear end face of the shell bottom plate 131, and the distance from the rear surface of the second groove 1331 to the rear surface of the shell upper plate 133 are the same, all equal to s1; the distance from the left end face of the first groove 1311 to the left surface of the left longitudinal middle plate 1324, the distance from the right end face of the first groove 1311 to the right surface of the right longitudinal middle plate 1325, the distance from the left end face of the second groove 1331 to the left surface of the left longitudinal middle plate 1324, and the distance from the right end face of the second groove 1331 to the right surface of the right longitudinal middle plate 1325 are the same, all equal to s2; the length of the first groove 1311, The length of the second groove 1331, the width of the left rectangular through groove 431, the width of the right rectangular through groove 432, the width of the fifth rectangular plate 425, the width of the sixth rectangular plate 426, the width of the seventh rectangular plate 427, and the width of the eighth rectangular plate 428 are the same, all equal to s3; the horizontal distance from the left end surface of the transverse part of the four-stage T-shaped power splitting cavity 1241 closest to the left longitudinal middle plate 1324 to the right end surface of the left longitudinal middle plate 1324, and the horizontal distance from the right end surface of the transverse part of the four-stage T-shaped power splitting cavity 1241 closest to the right longitudinal middle plate 1325 to the left end surface of the right longitudinal middle plate 1325 are the same, all equal to s4; the depth of the first rectangular groove 411, the depth of the second rectangular groove 412, the depth of the third rectangular groove 413, the depth of the fourth rectangular groove 414, the length of the first rectangular plate 421, the length of the second rectangular plate 422, the length of the third rectangular plate 423, and the length of the fourth rectangular plate 424 are the same, all equal to s5. ;

[0060] 8. The width a41 and height h24 of the slotted waveguide 9 must satisfy TE 10 The mode is transmitted in it, generally satisfying a41<λ 0 / 2,λ 0 / 2 <h24<λ 0 ,λ 0is the wavelength in free space. The width of the rectangular bottom plate 91 is equal to the width of the rectangular upper plate 93, and both are equal to the width a41 of the slotted waveguide 9; the height of the rectangular middle plate 92 is equal to the height of the rectangular channel 94, and both are equal to b26; under normal circumstances, the height h19 of the rectangular bottom plate 91 and the height of the rectangular upper plate 93 (equal to h9) should be equal, and smaller than the height b26 of the rectangular middle plate 92, but because the rectangular upper plate 93 needs to have a slit, its height slightly increases, so b26>h9>h19>0; the sum of the height h19 of the rectangular bottom plate 91, the height b26 of the rectangular middle plate 92 and the height of the rectangular upper plate 93 (equal to h9) should be consistent with the height h24 of the slotted waveguide 9, that is, h19+b26+h9=h24; the width a42 of the rectangular middle plate 92 and the width a38 of the rectangular channel 94 satisfy 2*a42+a38=a41; in the design, the microwave TE 10 Mode transmission, using electromagnetic simulation software CST StudioSuit simulation to obtain the precise values ​​of a41, a42, a38, h19, b26, h9, h24. The length b29 of the slotted waveguide 9 should be related to the number and position of the waveguide slots 95, and should satisfy b29 = (K-1) * b32 + 2 * s23.

[0061] 9, the width a43 of the dielectric cover 8, the height h22 of the dielectric cover 8, the thickness s22 of the front cover 81, the depth s9 of the first annular through groove, the height h20 of the rectangular bottom cover plate 821, the width a44 of the rectangular middle cover plate 822, the height h21 of the rectangular middle cover plate 822, and the height h9 of the rectangular upper cover plate 823 should be designed so that the slotted waveguide 9 can be completely wrapped in the dielectric cover 8 to ensure the sealing of the dielectric cover 8 and minimize the impact on the slotted waveguide 9. Under the conditions of satisfying h20+h21+h9=h22, and a43>a41>a44, h22>h21>h9>h20, the electromagnetic simulation software CST Studio Suit is used to simulate and obtain the precise values ​​of a43, a44, h20, h21, h9 and h22. Considering the processing cost, the thickness s22 of the front cover 81 and the depth s9 of the third groove 811, the fourth groove 812, the fifth groove 813 and the sixth groove 814 should not be too small, and the axial distance s4 from the rear cover to the slotted waveguide 9 close to the X' end face should not be too large, generally s22>5mm, s9>3mm, s4<2mm. The thickness of the rear cover is the same as that of the front cover 81, which is equal to s22; the depth of the third groove 811, the fourth groove 812, the fifth groove 813 and the sixth groove 814 is the same as the depth of the seventh groove 831, the eighth groove 832, the ninth groove 833 and the tenth groove 834, which is equal to s9. The length of the dielectric cover 8 should satisfy b28=b30+2*(s22-s9)=b29+s4+2*s22.

[0062] 10. The chamfer radius r12 of the inner surface at the connection between the rectangular bottom cover plate 821 and the two rectangular middle cover plates 822, the chamfer radius r7 of the outer surface at the connection between the rectangular bottom cover plate 821 and the two rectangular middle cover plates 822, the chamfer radius r2 of the inner surface at the connection between the rectangular upper cover plate 823 and the two rectangular middle cover plates 822, and the chamfer radius r15 of the outer surface at the connection between the rectangular upper cover plate 823 and the two rectangular middle cover plates 822 should all meet the microwave lossless transmission conditions to achieve the purpose of reducing reflection, and r15>r2>r7>r12. The chamfer radius of the inner side surface near X at the connection between the third groove 811 and the fourth groove 812, the chamfer radius of the inner side surface near X at the connection between the third groove 811 and the fifth groove 813, the chamfer radius of the inner side surface near X' at the connection between the seventh groove 831 and the eighth groove 832, and the chamfer radius of the inner side surface near X' at the connection between the seventh groove 831 and the ninth groove 833 are the same as the chamfer radius of the inner surface of the connection between the rectangular bottom cover plate 821 and the two rectangular middle cover plates 822, and are all equal to r12; The chamfer radius of the inner side surface near X at the connection between the sixth groove 814 and the fourth groove 812, the chamfer radius of the inner side surface near X at the connection between the sixth groove 814 and the fifth groove 813, the chamfer radius of the inner side surface near X' at the connection between the tenth groove 834 and the eighth groove 832, the chamfer radius of the inner side surface near X' at the connection between the tenth groove 834 and the ninth groove 833, and the chamfer radius of the inner surface near X' at the connection between the rectangular upper cover plate 823 and the two rectangular middle cover plates 822 are the same, and are all equal to r2; The chamfer radius of the outer side surface away from X at the connection between the groove 811 and the fourth groove 812, the chamfer radius of the outer side surface away from X at the connection between the third groove 811 and the fifth groove 813, the chamfer radius of the outer side surface away from X at the connection between the seventh groove 831 and the eighth groove 832, and the chamfer radius of the outer side surface away from X at the connection between the seventh groove 831 and the ninth groove 833 are the same as the chamfer radius of the outer surface of the connection between the rectangular bottom cover plate 821 and the two rectangular middle cover plates 822, and are all equal to r7; the chamfer radius of the outer side surface away from X at the connection between the sixth groove 814 and the fourth groove 812, the chamfer radius of the outer side surface away from X at the connection between the sixth groove 814 and the fifth groove 813, the chamfer radius of the outer side surface away from X at the connection between the tenth groove 834 and the eighth groove 832, and the chamfer radius of the outer side surface away from X at the connection between the tenth groove 834 and the ninth groove 833 are the same as the chamfer radius of the outer surface of the connection between the rectangular upper cover plate 823 and the two rectangular middle cover plates 822, and are all equal to r15.

[0063] 11. There are K waveguide slots 95 in total. The normalized equivalent conductance of each slot is Where S 1,1The reflection coefficient of the input port of the high-power waveguide slot array antenna 101 with the dielectric cover 8 obtained by electromagnetic simulation software CST Studio Suit when the waveguide slot 95 is in the resonant state; the mathematical relationship between the normalized resonant conductance g of the K waveguide slots 95 and the length b34 of the waveguide slot 95 can be obtained by simulation with the electromagnetic simulation software CST Studio Suit (after the shape of the waveguide slot is determined, there must be a unique corresponding mathematical relationship between the normalized resonant conductance g of the waveguide slot and the length b34 of the waveguide slot); the waveguide slot 95 is an inclined slot on the narrow side of the rectangular waveguide. Changing the inclination angle θ of the waveguide slot 95 can change the magnitude of the normalized equivalent conductance. Adjust the depth c9 of the slot cut into the wide side to make the slot in the resonant state; the mathematical relationship between the normalized resonant conductance g of the K waveguide slots 95 and the inclination angle θ of the waveguide slot 95 can be obtained by simulation with the electromagnetic simulation software CST Studio Suit (after the shape of the waveguide slot is determined, there must be a unique corresponding mathematical relationship between the normalized resonant conductance g of the waveguide slot and the inclination angle θ of the waveguide slot); the mathematical relationship between the normalized resonant conductance g of the K waveguide slots 95 and the depth c9 of the waveguide slot 95 can be obtained by simulation with the electromagnetic simulation software CST Studio Suit (after the shape of the waveguide slot is determined, there must be a unique corresponding mathematical relationship between the normalized resonant conductance g of the waveguide slot and the depth c9 of the waveguide slot); the axial spacing b32 between adjacent waveguide slots 95 should be equal to λ g / 2. The axial spacing from the waveguide slot 95 closest to the front cover 81 to the X end face of the slotted waveguide 9 should be equal to the axial spacing from the waveguide slot 95 closest to the rear cover to the X' end face of the slotted waveguide 9, both of which are s23 and should be equal to λ g / 2, λ g is the operating wavelength of the slotted waveguide 9.

[0064] 12. There are N6 support columns 10 in total. The support columns 10 are located between the slotted waveguide 9 and the dielectric cover 8. The height h25 of the support columns 10, generally with a diameter c8 > 5 mm. The axial spacing b33 between adjacent support columns 10 should, when designed, satisfy the function of supporting the dielectric cover 8 while reducing the influence on the slotted waveguide 9, and should satisfy h25 + h24 = h21. The axial spacing s24 from the support column 10 closest to the rear cover to the rear cover should satisfy (s24 - s4) * 2 = s23, s24 < s23 < b33. According to the axial spacing b33 between adjacent support columns 10 and the axial spacing s24 from the support column 10 closest to the rear cover to the rear cover, the number N6 of support columns 10 can be obtained, that is, N6 = (b28 - s22 - s24) / b33.

[0065] 13. There are N7 support rods 201 in total. The support rods 201 are located between the rectangular middle plate 92 and the rectangular middle cover plate 822. The width a45 and height h23 of the support rods 201, and the longitudinal spacing s20 of the support rods 201 in the same row are designed to meet the function of supporting the dielectric cover 8 while reducing the impact on the slotted waveguide 9, and meet a41+2*a45+2*a44=a43, a43>a41>a44>a45, h22>h21>s20>h9>h20>h23. The longitudinal spacing from the support rod 201 closest to the rectangular bottom plate 91 to the lower surface of the rectangular bottom plate 91 is equal to the longitudinal spacing from the support rod 201 closest to the rectangular upper plate 93 to the upper surface of the rectangular upper plate 93, both of which are s21. According to the longitudinal spacing s20 of the support rods 201 in the same column and the longitudinal spacing s21 from the support rod 201 closest to the rectangular bottom plate 91 to the lower surface of the rectangular bottom plate 91, the number N7 of the support rods 201 can be obtained, that is, N7 = 2*((h24-2*s21) / s20+1). The length b31 of the support rod 201 should satisfy b31 = b29+s4.

[0066] 14. The rectangular through slot 815 connects the front cover 81 and the slotted waveguide 9. The width of the rectangular through slot 815 is equal to the width of the rectangular channel 94, both of which are a38; the height of the rectangular through slot 815 is equal to the height of the rectangular channel 94, both of which are b26; the depth of the rectangular through slot 815 is equal to the thickness of the front cover 81, both of which are s22; the distance between the lower surface of the rectangular through slot 815 and the lower surface of the front cover 81 is s6, the distance between the upper surface of the rectangular through slot 815 and the upper surface of the front cover 81 is s19, and the distance between the left surface of the rectangular through slot 815 and the left surface of the front cover 81 is equal to the distance between the right surface of the rectangular through slot 815 and the right surface of the front cover 81. All of them are a46. In the design, s6=h19+h20, s19=h9+h25+h9, and a46=a42+a44+a45 are satisfied.

[0067] Through the electromagnetic simulation software CST Studio Suit, under the conditions that N = N4 * 2, N4 = N3 * 2, N3 = N2 * 2, N2 = N1 * 2, N5 = a5 / s7, h1 = h9 + h10, h2 = h8 + h9, h3 = h1 + h2 + h4, a34 = a32 + a32, b1 = b3 + b14 = 2 * d + b5 + b7 + b11 + b10, a1 = a9 + a7 + a9 = a10 + d + a10, a30 = a29 + a25 + a29, a11 = a16 + a18 + a19 = a12 + d + a13, a21 = a22 + d + a23 = a28 + a26 + a29, a31 = c4 + d + c4 = a33 + a32 + a33, a20 = a19 + a15 + a19, a0 = 2 * c1 + a2 = 2 * s1 + a3 = 2 * s1 + 2 * s4 + 2 * a32 + a33 * N4 + a34 * (N4 - 1), and a0 > a3 > a5 > a2 > a1 > a20 > a11 > a10 > a9 > a15 > a30 > a21 > a12 > a31 > a13 > a19 > a4 > a34 > a18 > a6 > a7 > a25 > a16 > a22 > a26 > a23 > a29 > a32 > a28 > a24 > a14 > a33 > a17 > a27 > a8, s5 > s2 > s1 > s6 > s3 > s4 > s7, b1 > b14 > b2 > b10 > b13 > b12 > b3 > b15 > b11 > b6 > b9 > b7 > b4 > b8 > b5 > b16, c1 > c2 > c4 > c3, h3 > h11 > h4 > h1 > h10 > h2 > h8 > h7 > h5 > h6 > h9, r6 > r3 > r11 > r1 > r9 > r2 > r10 > r5 > r7 > r4 > r8 > r12, L1 = c1 * sinθ1, θ1 = 45°, θ2 < θ3 < θ4, setting the transmission efficiency of the power divider to be greater than 99%, the exact values of the parameters N1, N2, N3, N4, N5, L1, a0, a1, a2, a3, a4, a5, a6, a7, a8, a9, a10, a11, a12, a13, a14, a15, a16, a17, a18, a19, a20, a21, a22, a23, a24, a25, a26, a27, a28, a29, a30, a31, a32, a33, a34, b1, b2, b3, b4, b5, b6, b7, b8, b9, b10, b11, b12, b13, b14, b15, b16, h1, h2, h3, h4, h5, h6, h7, h8, h9, h10, h11, s1, s2, s3, s4, s5, s6, s7, c1, c2, c3, c4, c1, r1, r2, r3, r4, r5, r6, r7, r8, r9, r10, r11, r12, θ1, θ2, θ3, θ4 can be obtained.

[0068] Through the electromagnetic simulation software CST Studio Suit, under the conditions of b29 = (K-1) * b32 + 2 * s23, b28 = b30 + 2 * (s22-s9) = b29 + s4 + 2 * s22, b30 = b29 + 2 * s9 + s4, b31 = b29 + s4, N6 = (b28-s22-s24) / b33, N7 = 2 * ((h24-2 * s21) / s20 + 1), 2 * a42 + a38 = a41, a41 + 2 * a45 +2*a44=a43,a46=a42+a44+a45,h19+b26+h9=s21+s20+s21=h24,h20+h21+h9=s6+b26+s19=h2 2, h25+h24=h21, (s24-s4)*2=s23, s6=h19+h20, s19=h9+h25+h9, a43>a41>c8>a44>a45>a42, λ 0 / 2 <h24<λ 0 , a41<λ 0 Under the conditions of / 2, h22>h21>h24>s20>h9>h20>h23>h19, s22>5mm, s9>3mm, s23<2mm, setting the antenna radiation efficiency greater than 99%, the precise values ​​of parameters K, N6, N7, a41, a42, a43, a44, a45, a46, b28, b29, b30, b31, b32, b33, b34, h19, h20, h21, h22, h23, h24, h25, s19, s20, s21, s22, s23, s24, c8, c9 can be obtained.

[0069] Through the electromagnetic simulation software CST Studio Suit, when a38+s17+s17=d, a38+s3+s3=a39, d+s18+s18=a40, a38+s2+s2=a37, b26+s17+s17=s10, b27+s17=b25, s7+s3=h15, s3+a8=s2, b19+s5=b20+b21=b18, a35>a37>a40>a39>a36>a38, h12>h13>h16>h18>h14>h15, b18>b19>b20>b22>b25>b23>b27>b24>b26> Under the conditions of b21>b17, s12>s10>s8>s11>s13>s9>s18>s17, c7>c6>c5, the transmission efficiency of the partition plate, flange and curved waveguide is set to be greater than 99%, and the precise values ​​of parameters a35, a36, a37, a38, a39, a40, b17, b18, b20, b21, b22, b23, b24, b25, b26, b27, h12, h13, h14, h15, h16, h18, s8, s9, s10, s11, s12, s13, s17, s18, c5, c6, c7, r14 can be obtained. Compared with the prior art, the present invention can achieve the following technical effects:

[0070] 1. The vacuum window sealed power divider of the present invention adopts an H-surface T-junction power divider structure, and the input port of the latter power divider structure and the output port of the previous power divider structure are on the same plane, which effectively improves the space utilization rate and can realize the compact arrangement of the array; the sealing plate and the dielectric window of the vacuum window sealed power divider of the present invention are made of 30% glass fiber PEEK material, whose expansion coefficient and thermal expansion coefficient are similar to those of metals, and will not deform due to the inconsistency of expansion coefficients at low temperatures of -50°C and high temperatures of 50°C, and has better air tightness; the metal rectangular plate filled in the dielectric window of the vacuum window sealed power divider of the present invention can ensure good electrical contact while ensuring air tightness; the power divider body of the vacuum window sealed power divider of the present invention is a metal structure, and there is no discontinuous structure inside the cavity, which can effectively suppress the generation of electric field enhancement effect and improve power capacity; the rectangular grooves at the upper and lower parts of the rear end of the power divider body can offset reflection, and the continuous triangular prism grooves on the dielectric window can further improve power capacity.

[0071] 2. The width of the slot waveguide in the rectangular waveguide slot antenna with a dielectric cover of the present invention is less than one waveguide wavelength, which effectively suppresses the generation of slot array grating lobes; the slot waveguides in the rectangular waveguide slot antenna with a dielectric cover of the present invention are all metal structures, which ensures the aperture efficiency of the antenna, overcomes the problem of RF breakdown that limits the power capacity of the antenna, and achieves high power capacity, high aperture efficiency, and high radiation efficiency; the dielectric cover in the rectangular waveguide slot antenna with a dielectric cover of the present invention isolates the slot waveguide from the outside world and is filled with sulfur hexachloride gas, thereby achieving the function of simultaneously withstanding low temperatures of -50°C and high temperatures of 50°C; the present invention is an array of multiple rectangular waveguide slot antennas with dielectric covers, which has a compact structure and is easy to modularize.

[0072] 3. The separation waveguide, flange and curved waveguide of the present invention jointly realize microwave steering in the vacuum window sealed power divider, so that microwaves can be input into the rectangular waveguide slot antenna with a dielectric cover; wherein the separation waveguide separates the multi-path microwaves received from the vacuum window sealed power divider and inputs them into the curved waveguide through the flange; the curved waveguide will once again change the transmission direction of the input microwaves and input the microwaves into the rectangular waveguide slot antenna with a dielectric cover. BRIEF DESCRIPTION OF THE DRAWINGS

[0073] Figure 1 It is a schematic diagram of the overall structure of the high-power microwave waveguide slot antenna array of the present invention.

[0074] Figure 2 yes Figure 1 Side view of.

[0075] Figure 3 yes Figure 1 Schematic diagram of the overall structure of the medium vacuum window sealed power divider.

[0076] Figure 4 yes Figure 3 Schematic diagram of the structure of the medium power divider body, welding cover and dielectric window.

[0077] Figure 5 yes Figure 3 Schematic diagram of the overall structure of the power divider body and dielectric window when the welding cover is not covered.

[0078] Figure 6 yes Figure 3 A top view and a partial enlarged view of the main body of the medium power divider; Figure 6 (a) Yes Figure 3 A top view of the middle power divider body 1; Figure 6 (b) Figure 6 (a) Local magnified view at point A; Figure 6 (c) Figure 6 (a) Local magnified view at point B; Figure 6 (d) Figure 6 (a) Local magnified view at point C; Figure 6 (e) Figure 6 (a) Local magnified view at D.

[0079] Figure 7 yes Figure 3 Vertical section view along the OO' plane.

[0080] Figure 8 yes Figure 3 Vertical section view along the QQ' plane.

[0081] Fig. 9 yes Figure 3 The overall structural diagram and partial enlarged diagram of the medium window; Fig. 9 (a) Yes Figure 3 Schematic diagram of the overall structure of the medium window; Fig. 9 (b) Fig. 9 (a) Local magnified view at E; Fig. 9 (c) Fig. 9 (a) A magnified local view at F.

[0082] Fig.10 yes Fig. 9 Horizontal section view and partial enlarged view along the RR' plane; Fig.10 (a) Yes Fig. 9 Horizontal section view along the RR' plane; Fig.10 (b) Fig.10 (a) Local magnified view at G; Fig.10 (c) Fig.10 (a) Local magnified view at H.

[0083] Fig.11 yes Figure 3 Rear view of the media window.

[0084] Fig.12 yes Figure 1 Schematic diagram of the overall structure of the middle partition waveguide 5, flange 6, curved waveguide 7 and rectangular waveguide slot antenna 101 with dielectric cover.

[0085] Fig.13 yes Fig.12 Horizontal cross-sectional view of the separated waveguide 5 along the SS' plane.

[0086] Fig.14 yes Fig.12 Schematic diagram of the overall structure of the partition plate 52 in the partition waveguide 5.

[0087] Fig.15 yes Fig.12 Vertical section view along the TT' plane.

[0088] Fig.16 yes Fig.12 Vertical section view along the UU' plane.

[0089] Fig.17 yes Figure 1 The overall structural diagram of the middle flange 6, the overall structural diagram of the flange bottom plate 61, and the overall structural diagram of the flange middle plate 62; Fig.17 (a) Yes Figure 1 A schematic diagram of the overall structure of the middle flange 6; Fig.17 (b) Yes Fig.17 (a) A schematic diagram of the overall structure of the middle flange bottom plate 61; Fig.17 (c) Yes Fig.17 (a) Schematic diagram of the overall structure of the middle flange middle plate 62.

[0090] Fig.18 yes Figure 1 The overall structure diagram, left side view and bottom view of the middle curved waveguide 7; Fig.18 (a) Yes Figure 1 A schematic diagram of the overall structure of the middle curved waveguide 7; Fig.18 (b) Yes Figure 1 A left side view of the middle curved waveguide 7; Fig.18 (c) Yes Figure 1 Bottom view of the curved waveguide 7. Fig.19 It is a schematic diagram of the overall structure of the rectangular waveguide slot antenna with a dielectric cover of the present invention.

[0091] Fig. 20 It is a schematic structural diagram of the rectangular waveguide slot antenna with dielectric cover after horizontal cutting along II' plane of the present invention.

[0092] Fig.21 yes Fig.19 Vertical section view along JJ' plane.

[0093] Fig. 22 yes Fig.19 Horizontal section view and partial enlarged view along II' plane; Fig. 22 (a) Yes Fig.19 Horizontal section view along plane II'; Fig. 22 (b) Fig. 22 (a) Local magnified view at K1; Fig. 22 (c) Fig. 22 (a) Local magnified view at K2.

[0094] Fig.23 It is a side view and a partial enlarged view of the cross section of the rectangular waveguide slot antenna with a dielectric cover according to the present invention after horizontal cutting along the MM' plane; Fig.23 (a) is a horizontal cross-sectional view of the present invention along the MM' plane; Fig.23 (b) Fig.23(a) Local magnified view at K3; Fig.23 (c) Fig.23 (a) A magnified local view at K4.

[0095] Fig.24 It is a front view of the microwave input end face of the rectangular waveguide slot antenna with a dielectric cover according to the present invention.

[0096] Fig.25 It is a front view of the microwave output end face of the rectangular waveguide slot antenna with a dielectric cover according to the present invention.

[0097] Fig.26 This is a simulation result diagram of the electric field distribution characteristics of Example 1 at an operating frequency of 4.3 GHz when the input microwave power is 0.5 W. Fig. 27 It is the electric field distribution characteristic result of the rectangular waveguide slot array antenna in Example 1 at an operating frequency of 4.3 GHz when the input microwave power is 0.5 W.

[0098] Fig.28 It is the two-dimensional radiation pattern of the rectangular waveguide slot array antenna in Example 1 at an operating frequency of 4.3 GHz. DETAILED DESCRIPTION

[0099] The specific implementation of the present invention is further described below in conjunction with the drawings and examples.

[0100] Figure 1 Schematic diagram of the overall structure of the high-power microwave waveguide slot antenna array of the present invention; Figure 1 As shown, the present invention includes a power divider and N rectangular waveguide slot antennas, the power divider is a vacuum window sealed power divider 100, the rectangular waveguide slot antenna is a rectangular waveguide slot antenna with a dielectric cover 101, and the vacuum window sealed power divider 100 and the N rectangular waveguide slot antennas with a dielectric cover 101 are connected through a separation waveguide 5, N groups of flanges 6, and N curved waveguides 7. The end of the present invention close to the microwave source is defined as the input end, and the end away from the microwave source is defined as the output end. The vacuum window sealed power divider 100 of the present invention has an input port connected to an external microwave source, and the vacuum window sealed power divider 100 divides the microwaves received from the microwave source into N groups of microwaves and then inputs them into the separation waveguide 5, and the separation waveguide 5 inputs the N groups of microwaves into the N rectangular waveguide slot antennas with a dielectric cover 101 through the N groups of flanges 6 and the curved waveguide 7, and the N rectangular waveguide slot antennas with a dielectric cover 101 radiate the microwaves. N is a positive integer, equal to the power divider that needs to be achieved, and is generally an even number (for example, if the power divider needs to divide one into sixteen, N is equal to 16; if the power divider needs to divide one into thirty-two, N is equal to 32).

[0101] Figure 3 yes Figure 1 The overall structure diagram of the vacuum window sealed power divider 100; Figure 3 As shown, the vacuum window sealed power divider 100 comprises a power divider body 1, a welding cover 2 (such as Figure 4 As shown in the figure), a sealing plate 3, and a dielectric window 4. The power divider body 1 has an input port connected to an external microwave source to receive microwaves to be power-distributed output by the microwave source. The power divider body 1 has N output ports, namely the first output port, the second output port, ..., the nth output port, ..., the Nth output port, which are connected to the dielectric window 4, and the dielectric window 4 is connected to the separation waveguide 5. For the convenience of description, along the input to output direction, the central axis OO' is drawn on the upper surface of the sealing plate 3, point O is on the input end face of the vacuum window sealed power divider 100, point O' is on the dielectric window 4, and the vacuum window sealed power divider 100 is symmetrical about the central axis OO'; a horizontal axis PP' is drawn on the upper surface of the sealing plate 3 through point O, PP' is perpendicular to OO', P is the left end, and P' is the right end; the end close to the central axis OO' in the vertical direction is the upper end, and the end away from the central axis OO' is the lower end; along the central axis OO', the point close to O is the front end, and the point close to O' is the rear end; the power divider body 1 has an input port at point O, and N output ports are opened near O' to connect with the dielectric window 4. The power divider body 1 is a rectangular parallelepiped with chamfered corners at both ends of the front surface, and is made of metal material. The input port of the power divider body 1 is connected to the microwave source to receive the microwave input by the microwave source. The welding cover 2 is a rectangular plate with chamfered angles at both ends of the front surface, and the chamfered angles of the front surface match the chamfered angles at both ends of the front surface of the power divider body 1. It is made of metal material and seals the upper surface of the power divider body 1 to ensure that the input microwaves propagate in the power divider body 1 and reduce microwave leakage; the sealing plate 3 is the same shape as the welding cover 2, and is also a rectangular plate with chamfered angles at both ends of the front surface. It is made of 30% glass fiber PEEK material and is located on the upper surface of the welding cover 2. The function is to further seal the upper surface of the power divider body 1 on the basis of the welding cover 2 sealing the upper surface of the power divider body 1, thereby further reducing the leakage of microwaves in the power divider body 1; the dielectric window 4 is connected to the N output ports of the power divider body 1, and the function is to transmit the N groups of microwaves received from the N output ports of the power divider body 1 after power division to the separation waveguide 5 during power division, and still ensure airtightness at high and low temperatures, thereby ensuring the normal use of the present invention at high and low temperatures.

[0102] Figure 2 yes Figure 1 The side view of Figure 2As shown, the rear surface of the dielectric window 4 of the vacuum window sealed power divider 100 is welded to the front surface of the separation waveguide 5; N flanges 6 are welded to the upper surface of the separation waveguide 5; the lower surfaces of the N flanges 6 are respectively welded to the upper surface of the separation waveguide 5, and the flange upper plates 63 of the N flanges 6 are respectively connected to the N curved waveguides 7 (vertical waveguides 71 of the curved waveguide 7) in sequence; the N curved waveguides 7 (upper ports of the curved waveguide 7) are respectively connected to the N rectangular waveguide slot antennas 101 with dielectric covers (front covers 81 of the dielectric covers 8 of the rectangular waveguide slot antennas 101 with dielectric covers) in sequence.

[0103] Figure 4 yes Figure 3 The overall structural diagram of the medium power divider body 1, the welding cover 2 and the dielectric window 4; Figure 4 As shown, the welding cover 2 is welded to the upper surface of the power divider body 1, combined with Figure 3 The sealing plate 3 is fixed to the upper surface of the welding cover 2 with screws.

[0104] Figure 5 yes Figure 3 The overall structural diagram of the power divider body 1 and the dielectric window 4 when the welding cover 2 is not covered; Figure 6 yes Figure 3 The top view and partial enlarged view of the power divider body 1. Figure 5 As shown, combined Figure 6 The power divider body 1 is made of metal material and consists of a power divider filling body 11 and a main body shell 13. Figure 7 As shown, combined Figure 5 The main shell 13 is composed of four parts: a shell bottom plate 131, a shell middle plate 132, a shell upper plate 133 and a waveguide port 134; the power division filling body 11 is located between the welding cover 2 and the shell bottom plate 131 of the main shell 13, and the outer wall is wrapped by the main shell 13. A power division channel 12 is dug in the power division filling body 11, and the power division channel 12 is divided into a primary power division channel 121, a secondary power division channel 122, a tertiary power division channel 123, and a quaternary power division channel 124 according to function; the primary power division channel 121 and the secondary power division channel 122 are connected, and the tertiary power division channel 123 and the quaternary power division channel 124 are arranged in sequence from O to O', and are connected to each other from front to back.

[0105] Figure 7 yes Figure 3 Vertical section view along OO' plane. Figure 7 As shown, combined Figure 5 The upper plate 133 of the shell is closest to OO', the upper surface of the middle plate 132 of the shell is welded to the lower surface of the upper plate 133 of the shell, the bottom plate 131 of the shell is farthest from OO', the upper surface of the bottom plate 131 of the shell is welded to the lower surface of the middle plate 132 of the shell, and the rear surface of the waveguide port 134 is welded to the front surface of the middle plate 132 of the shell. Figure 6 (a) Yes Figure 3 The top view of the middle power divider body 1 is as follows: Figure 6 As shown in (a), combined Figure 5 The housing bottom plate 131 is a rectangular parallelepiped plate with a width of a3, a length of b1, and a height of h1 (see Figure 7 ), the housing bottom plate 131 is an axisymmetric structure, and the left and right ends of the front surface of the housing bottom plate 131 are chamfered, and the chamfer angle is θ1 (see Figure 6 (a)), the chamfer dimension is c1 (see Figure 6 (a)). The chamfered surface of the shell bottom plate 131 (i.e., the inclined chamfered surface formed by the chamfer) is rounded at the connection between the left and right ends of the front surface of the shell bottom plate 131, and the chamfer radius is r1; the surface at the left end of the chamfer of the shell bottom plate 131 is rounded at the connection with the left end surface of the shell bottom plate 131, and the chamfer radius is r1; the surface at the right end of the chamfer of the shell bottom plate 131 is rounded at the connection with the right end surface of the shell bottom plate 131, and the chamfer radius is r1.

[0106] like Figure 5 As shown, combined Figure 6 (a) and Figure 7 The shell middle plate 132 is composed of a transverse middle plate 1321, a left inclined middle plate 1322 and a right inclined middle plate 1323 symmetrical about the OO' axis, and a left longitudinal middle plate 1324 and a right longitudinal middle plate 1325 symmetrical about the OO' axis. The transverse middle plate 1321, the left inclined middle plate 1322, the right inclined middle plate 1323, the left longitudinal middle plate 1324, and the right longitudinal middle plate 1325 are all rectangular plates, and the height is h3 (see Figure 7 ), the thickness is s1; Figure 5 As shown, the lower end of the rear surface of the horizontal middle plate 1321 is welded to the front surface of the shell bottom plate 131, and the width of the horizontal middle plate 1321 is a2 (see Figure 6 (a)); the lengths of the left inclined middle plate 1322 and the right inclined middle plate 1323 are both L1 (see Figure 6 (a)); the lower end of the right surface of the left longitudinal middle plate 1324 is welded to the left surface of the shell bottom plate 131, and the lower end of the left surface of the right longitudinal middle plate 1325 is welded to the right surface of the shell bottom plate 131. The lengths of the left longitudinal middle plate 1324 and the right longitudinal middle plate 1325 are both b2 (see Figure 6 (a)); the left end face of the horizontal middle plate 1321 is welded to the right end face of the left inclined middle plate 1322, and the right end face of the horizontal middle plate 1321 is welded to the left end face of the right inclined middle plate 1323. The inner surface of the connection is rounded, and the chamfer radius is equal to r1 (see Figure 6(a)); the left end face of the left inclined middle plate 1322 is welded to the front end face of the left longitudinal middle plate 1324, and the inner surface of the connection is rounded, and the chamfer radius is equal to r1; the right end face of the right inclined middle plate 1323 is welded to the front end face of the right longitudinal middle plate 1325, and the inner surface of the connection is chamfered, and the chamfer radius is equal to r1. Figure 5 As shown, combined Figure 6 (a), the upper plate 133 of the housing is a rectangular plate with a width of a3, a length of b3, and a height of h2 (see Figure 7 ); The left end face of the upper plate 133 of the housing is welded to the right end face of the left longitudinal middle plate 1324, and the connection away from O' is rounded, and the chamfer radius is equal to r1. Figure 5 As shown, combined Figure 6 (a) and Figure 7 The waveguide opening 134 is symmetrical about the OO' axis, the rear end face of the waveguide opening 134 is welded to the front end face of the transverse middle plate 1321, and the outer surface of the welding part is rounded, and the chamfer radius is r2 (see Figure 6 (a)); the waveguide port 134 is a rectangular plate with a width of a4, a length of b4, and a height equal to h3 (see Figure 7 The waveguide port 134 and the transverse middle plate 1321 are provided with a through hole 1341 along the OO' direction (as the input port of the present invention when the power is distributed), the width of the through hole 1341 is d, the depth is equal to b3, and the height is h4 (see Figure 7 ), the distance between the lower surface of the through hole 1341 and the lower surface of the waveguide opening 134 is equal to h1 (see Figure 7 ), the distance between the upper surface of the through hole 1341 and the upper surface of the waveguide opening 134 is equal to h2 (see Figure 7 ).

[0107] Figure 8 yes Figure 3 Vertical cross-sectional view along the QQ' plane. QQ' is parallel to PP', and the horizontal distance from QQ' to the rear surface of the upper plate 133 of the housing is s5 (see Figure 7 ).like Figure 8 As shown, combined Figure 7 The bottom plate 131 of the housing has a first groove 1311 vertically downward from the upper surface, with a depth of h5; the first groove 1311 is a rectangular cavity with a width of a5 and a length of s3 (see Figure 7 ); the left and right ends of the lower surface of the first groove 1311 are rounded, and the chamfer radius is r11; the distance from the rear end surface of the first groove 1311 to the rear end surface of the housing bottom plate 131 is equal to s1 (see Figure 7), the first groove 1311 is symmetrical about the OO' axis, the distance from the left end surface of the first groove 1311 to the left surface of the left longitudinal middle plate 1324 is s2, and the distance from the right end surface of the first groove 1311 to the right surface of the right longitudinal middle plate 1325 is equal to s2. The upper plate 133 of the housing is vertically opened from the lower surface to the second groove 1331, with a depth of h6 (see Figure 7 ); the second groove 1331 is a rectangular cavity with a width equal to a5 and a length equal to s3 (see Figure 7 ); both ends of the upper surface of the second groove 1331 are rounded, and the chamfer radius is equal to r2; the distance from the rear surface of the second groove 1331 to the rear surface of the upper plate 133 of the housing is equal to s1 (see Figure 7 ), the second groove 1331 is symmetrical about the OO' axis, the distance from the left end surface of the second groove 1331 to the left surface of the left longitudinal middle plate 1324 is equal to s2, and the distance from the right end surface of the second groove 1331 to the right surface of the right longitudinal middle plate 1325 is equal to s2. Figure 5 As shown, combined Figure 6 (a), the power distribution filling body 11 is a rectangular plate made of metal material, and the width of the power distribution filling body 11 is a3 (see Figure 6 (a)), with a length of b1 (see Figure 6 (a)), with a height of h4 (see Figure 7 ), the power distribution filling body 11 is an axisymmetric structure, and both ends of the front surface of the power distribution filling body 11 are chamfered, and the chamfer angle is equal to θ1 (see Figure 6 (a)), the chamfer radius is equal to c1 (see Figure 6 (a)). (The lower surface of the power-dividing filling body 11 is welded on the upper surface of the bottom plate 131 of the shell, the front surface of the power-dividing filling body 11 is welded on the rear surface of the horizontal middle plate 1321, the left end chamfered surface of the front surface of the power-dividing filling body 11 is welded on the right surface of the left inclined middle plate 1322, the right end chamfered surface of the front surface of the power-dividing filling body 11 is welded on the left surface of the right inclined middle plate 1323, the left end surface of the power-dividing filling body 11 is welded on the right surface of the left longitudinal middle plate 1324, and the right end surface of the power-dividing filling body 11 is welded on the left surface of the right longitudinal middle plate 1325. The rear end surface of the upper plate 133 of the shell is flush with the rear end surface of the power-dividing filling body 11, and the lower surface of the upper plate 133 of the shell is welded on the upper surface of the power-dividing filling body 11. The front end face of the welding cover 2 is flush with the front end face of the power divider filling body 11, and the lower surface of the welding cover 2 is welded to the upper surface of the power divider filling body 11. Except that the height may be unequal, the lower surface of the power divider filling body 11 is exactly the same as the upper surface of the shell bottom plate 131, and the lower surface of the power divider filling body 11 is welded to the upper surface of the shell bottom plate 131. Therefore, the lower surface of the power divider filling body 11 is wrapped by the shell bottom plate 131, and the power divider filling body 11 is surrounded by the horizontal middle plate 1321, the left inclined middle plate 1322, the right inclined middle plate 1323, the left longitudinal middle plate 1324, and the right longitudinal middle plate 1325. The upper surface of the power divider filling body 11 is wrapped by the shell upper plate 133 and the welding cover 2.

[0108] Figure 6 (b) Figure 6 (a) A local enlarged view at A, as shown in Figure 6 As shown in (b), combined Figure 5 A primary power division channel 121, a secondary power division channel 122, a tertiary power division channel 123, and a quaternary power division channel 124 are dug in the power division filling body 11. The primary power division channel 121 is an axisymmetric structure. The primary power division channel 121 is composed of N1 primary T-shaped power division cavities 1211 and N1 primary trapezoidal bodies 1212. The primary trapezoidal bodies 1212 are made of metal materials. Each primary T-shaped power division cavity 1211 has a primary trapezoidal body 1212. The primary trapezoidal body 1212 is located in the power division channel 12 dug by the power division filling body 11. The lower surface of the primary trapezoidal body 1212 is welded to the upper surface of the shell bottom plate 131, and the welding surface is The hollow part of the bottom surface of the power-dividing filling body 11, the upper surface of the first-level trapezoidal body 1212 is welded on the lower surface of the welding cover 2, and the long side surface of the first-level trapezoidal body 1212, that is, the rear end surface, is welded on the rear end surface of the transverse part of the first-level T-shaped power-dividing cavity 1211; the first-level T-shaped power-dividing cavity 1211 is composed of a transverse rectangular cavity parallel to the OO' axis and a longitudinal rectangular cavity parallel to the PP' axis, which are perpendicularly intersected, i.e., T-shaped, and the transverse width of the first-level T-shaped power-dividing cavity 1211 is a1 (see Figure 6(b)), the length is equal to d, the depth is equal to h4, the width of the longitudinal part of the first-stage T-shaped power splitting cavity 1211 is equal to d, the length is b5, and the depth is h4; the left and right ends of the front surface of the transverse part of the first-stage T-shaped power splitting cavity 1211 are chamfered, the chamfer angle is equal to θ1, and the chamfer size is c2; the chamfer of the first-stage T-shaped power splitting cavity 1211 and the left end surface of the transverse part of the first-stage T-shaped power splitting cavity 1211 are rounded, the chamfer radius is r4, and the first-stage T-shaped power splitting cavity 1211 is chamfered The connection between the first-stage T-shaped power splitting cavity 1211 and the right end face of the horizontal part is rounded, and the chamfer radius is r4; the connection between the first-stage T-shaped power splitting cavity 1211 and the two ends of the front surface of the horizontal part is rounded, and the chamfer radius is r4; the horizontal distance from the left end face of the longitudinal part of the first-stage T-shaped power splitting cavity 1211 to the left end face of the horizontal part of the first-stage T-shaped power splitting cavity 1211 is a10, and the right end face of the longitudinal part of the first-stage T-shaped power splitting cavity 1211 to the first-stage T-shaped power splitting cavity 1211 is a110. The horizontal distance of the right end face of the transverse part of the power splitting chamber 1211 is equal to a10; the front end face of the transverse part of the primary T-shaped power splitting chamber 1211 and the rear end face of the longitudinal part of the primary T-shaped power splitting chamber 1211 are rounded at both ends of the connection, and the chamfer radius is r3; the horizontal distance from the left end face of the transverse part of the primary T-shaped power splitting chamber 1211 to the right surface of the left inclined middle plate 1322 is a6, and the horizontal distance from the right end face of the transverse part of the primary T-shaped power splitting chamber 1211 to the left surface of the right inclined middle plate 1323 is a6. =a6; each primary T-shaped power splitting cavity 1211 has a primary trapezoidal body 1212, the primary trapezoidal body 1212 is an isosceles trapezoidal body, the long side of the primary trapezoidal body 1212, i.e., the rear end face, is chamfered at both ends of the connection with the transverse portion of the primary T-shaped power splitting cavity 1211, and the chamfer radius is equal to r4; the long side length of the trapezoidal surface of the primary trapezoidal body 1212 is a7, the short side length of the trapezoidal surface is a8, the height of the trapezoidal surface is b6, and the height of the primary trapezoidal body 1212 is equal to h4 (see Figure 7 ), the angle of the acute internal angle is θ2; the left inclined surface of the first-level trapezoidal body 1212 is rounded at the connection with the front end surface, and the chamfer radius is r5; the right inclined surface of the first-level trapezoidal body 1212 is rounded at the connection with the front end surface, and the chamfer radius is equal to r5; the distance from the left end of the rear end surface of the first-level trapezoidal body 1212 to the left end of the horizontal part of the first-level T-shaped power splitting cavity 1211 is a9, and the distance from the right end of the rear end surface of the first-level trapezoidal body 1212 to the right end of the horizontal part of the first-level T-shaped power splitting cavity 1211 is equal to a9.

[0109] Figure 6 (c) Figure 6 (a) A local magnified view at point B, as shown in Figure 6 (c) shown in combination Figure 5The secondary power division channel 122 is an axisymmetric structure. The secondary power division channel 122 is composed of N2 secondary T-shaped power division cavities 1221 and N2 secondary trapezoidal bodies 1222. The secondary trapezoidal bodies 1222 are made of metal materials. Each secondary T-shaped power division cavity 1221 has a secondary trapezoidal body 1222. The secondary trapezoidal body 1222 is located in the power division channel 12 dug by the power division filling body 11. The lower surface of the secondary trapezoidal body 1222 is welded to the upper surface of the shell bottom plate 131. The welding surface is the hollow part of the lower bottom surface of the power division filling body 11. The upper surface of the secondary trapezoidal body 1222 is welded to the lower surface of the welding cover 2. The long side surface of the secondary trapezoidal body 1222, that is, the rear end surface, is welded to the rear end surface of the horizontal part of the secondary T-shaped power division cavity 1221; the secondary T The power splitting cavity 1221 is composed of a rectangular cavity in the transverse part parallel to the OO' axis and a rectangular cavity in the longitudinal part parallel to the PP' axis, which intersect each other perpendicularly, i.e., a T-shaped cavity. The width of the transverse part of the secondary T-shaped power splitting cavity 1221 is a11, the length is equal to d, and the depth is equal to h4. The width of the longitudinal part of the secondary T-shaped power splitting cavity 1221 is equal to d, the length is b7, and the depth is h4. The transverse part of the secondary T-shaped power splitting cavity 1221 is chamfered at the left and right ends of the front end surface, the chamfer angle is equal to θ1, and the chamfer size is equal to c2. The left chamfer of the secondary T-shaped power splitting cavity 1221 and the left end surface of the transverse part of the secondary T-shaped power splitting cavity 1221 are rounded, and the chamfer radius is r4. The right chamfer of the secondary T-shaped power splitting cavity 1221 and the secondary T-shaped power splitting cavity 1 The connection of the right end face of the horizontal part 221 is rounded, and the chamfer radius is r4; the connection of the chamfered angle of the secondary T-shaped power dividing chamber 1221 and the two ends of the front surface of the horizontal part of the secondary T-shaped power dividing chamber 1221 is rounded, and the chamfer radius is r4; the horizontal distance from the left end face of the longitudinal part of the secondary T-shaped power dividing chamber 1221 closest to the left inclined middle plate 1322 to the left end face of the horizontal part of the secondary T-shaped power dividing chamber 1221 is a12, and the horizontal distance from the right end face of the longitudinal part of the secondary T-shaped power dividing chamber 1221 to the right end face of the horizontal part of the secondary T-shaped power dividing chamber 1221 is a13; the front end face of the longitudinal part of the secondary T-shaped power dividing chamber 1221 is rounded at the end closer to the left and right end faces of the horizontal part of the secondary T-shaped power dividing chamber 1221, and the chamfer radius is r3; The front end face of the transverse part of the first-stage T-shaped power splitting chamber 1221 and the rear end face of the longitudinal part of the secondary T-shaped power splitting chamber 1221 are rounded at both ends of the connection, and the chamfer radius is equal to r1; the horizontal distance from the left end face of the transverse part of the secondary T-shaped power splitting chamber 1221 closest to the left inclined middle plate 1322 to the right surface of the left inclined middle plate 1322 is a14, and the horizontal distance from the right end face of the transverse part of the secondary T-shaped power splitting chamber 1221 closest to the right inclined middle plate 1323 to the left surface of the right inclined middle plate 1323 is a14; the two adjacent secondary T-shaped power splitting chambers 1221 meet the axial symmetric arrangement, and the horizontal distance between the right end face of the transverse part of the secondary T-shaped power splitting chamber 1221 and the left end face of the transverse part of the adjacent secondary T-shaped power splitting chamber 1221 on the right is a15;Each secondary T-shaped power splitting cavity 1221 has a secondary trapezoidal body 1222. The long side surface, i.e., the rear end surface, of the secondary trapezoidal body 1222 is welded tightly to the rear end surface of the transverse part of the secondary T-shaped power splitting cavity 1221. Both ends of the connection are rounded, and the chamfer radius is equal to r4. The secondary trapezoidal body 1222 is an isosceles trapezoidal body. The length of the long side of the isosceles trapezoidal surface of the secondary trapezoidal body 1222 is a16, the length of the short side of the isosceles trapezoidal surface is a17, the height of the isosceles trapezoidal surface is b8, and the height of the secondary trapezoidal body 1222 is equal to h4 (see; Figure 7 ), the angle of the acute internal angle is θ3; the left inclined surface of the secondary trapezoidal body 1222 is rounded at the connection with the front end surface, and the chamfer radius is r6; the right inclined surface of the secondary trapezoidal body 1222 is rounded at the connection with the front end surface, and the chamfer radius is equal to r6; the distance from the left end of the rear end surface of the secondary trapezoidal body 1222 closest to the left inclined middle plate 1322 to the left end surface of the horizontal part of the secondary T-shaped power splitting cavity 1221 is a18, and the distance from the right end of the rear end surface of the secondary trapezoidal body 1222 closest to the left inclined middle plate 1322 to the right end surface of the horizontal part of the secondary T-shaped power splitting cavity 1221 is equal to a19; two adjacent secondary trapezoidal bodies 1222 satisfy the axially symmetrical arrangement, and the horizontal distance between the right end of the rear end surface of the secondary trapezoidal body 1222 and the left end of the rear end surface of the adjacent secondary trapezoidal body 1222 on the right is a20.

[0110] Figure 6 (d) Figure 6 (a) A local magnified view at C, as shown in Figure 6 (d) shown in combination Figure 5The three-level power division channel 123 is an axisymmetric structure. The three-level power division channel 123 is composed of N3 three-level T-shaped power division cavities 1231 and N3 three-level trapezoidal bodies 1232. The three-level trapezoidal bodies 1232 are made of metal materials. Each three-level T-shaped power division cavity 1231 has a three-level trapezoidal body 1232. The three-level trapezoidal body 1232 is located in the power division channel 12 dug by the power division filling body 11. The lower surface of the three-level trapezoidal body 1232 is welded to the upper surface of the shell bottom plate 131. The welding surface is the hollow part of the lower bottom surface of the power division filling body 11. The upper surface of the three-level trapezoidal body 1232 is welded to the lower surface of the welding cover 2. The long side surface of the three-level trapezoidal body 1232, that is, the rear end surface, is welded to the rear end surface of the horizontal part of the three-level T-shaped power division cavity 1231. The three-level T-shaped power division The cavity 1231 is composed of a rectangular cavity in the transverse part parallel to the OO' axis and a rectangular cavity in the longitudinal part parallel to the PP' axis, which intersect vertically, i.e., a T-shape. The width of the transverse part of the three-stage T-shaped power division cavity 1231 is a21, the length is equal to d, and the depth is equal to h4. The width of the longitudinal part of the three-stage T-shaped power division cavity 1231 is equal to d, the length is equal to b7, and the depth is equal to h4. The front end face of the transverse part of the three-stage T-shaped power division cavity 1231 is chamfered at both ends, the chamfer angle is equal to θ1, and the chamfer size is equal to c3. The left chamfer of the three-stage T-shaped power division cavity 1231 and the left end face of the transverse part of the three-stage T-shaped power division cavity 1231 are chamfered at the connection, and the chamfer radius is r4. The right chamfer of the three-stage T-shaped power division cavity 1231 and the transverse part of the three-stage T-shaped power division cavity 1231 are chamfered at the connection, and the chamfer radius is r4. The connection between the right end surface and the right end surface of the three-stage T-shaped power splitting cavity 1231 is rounded, and the chamfer radius is r4; the connection between the chamfered corner of the three-stage T-shaped power splitting cavity 1231 and the two ends of the front surface of the transverse part of the three-stage T-shaped power splitting cavity 1231 is rounded, and the chamfer radius is r4; the horizontal distance from the left end surface of the longitudinal part of the three-stage T-shaped power splitting cavity 1231 closest to the left inclined middle plate 1322 to the left end surface of the transverse part of the three-stage T-shaped power splitting cavity 1231 is a22, and the horizontal distance from the right end surface of the longitudinal part of the three-stage T-shaped power splitting cavity 1231 closest to the left inclined middle plate 1322 to the right end surface of the transverse part of the three-stage T-shaped power splitting cavity 1231 is a23; the front end surface of the longitudinal part of the three-stage T-shaped power splitting cavity 1231 is rounded at the end closer to the left and right end surfaces of the transverse part of the three-stage T-shaped power splitting cavity 1231, and the chamfer radius is r 3; the front end face of the transverse part of the three-level T-shaped power dividing chamber 1231 and the rear end face of the longitudinal part of the three-level T-shaped power dividing chamber 1231 are rounded at both ends of the connection, and the chamfer radius is r7; the horizontal distance from the left end face of the transverse part of the three-level T-shaped power dividing chamber 1231 closest to the left inclined middle plate 1322 to the left end face of the left inclined middle plate 1322 is a24, and the horizontal distance from the right end face of the transverse part of the three-level T-shaped power dividing chamber 1231 closest to the right inclined middle plate 1323 to the right end face of the right inclined middle plate 1323 is equal to a24; two adjacent three-level T-shaped power dividing chambers 1231 satisfy the axially symmetrical arrangement, and the horizontal distance between the right end face of the transverse part of the three-level T-shaped power dividing chamber 1231 and the left end face of the transverse part of the adjacent three-level T-shaped power dividing chamber 1231 on the right is a25.Each three-stage T-shaped power splitting cavity 1231 has a three-stage trapezoidal body 1232. The long side surface of the three-stage trapezoidal body 1232, i.e., the rear end, is welded tightly to the rear end surface of the transverse part of the three-stage T-shaped power splitting cavity 1231. Both ends of the connection are rounded, and the chamfer radius is equal to r4. The three-stage trapezoidal body 1232 is an isosceles trapezoidal body. The long side length of the isosceles trapezoidal surface of the three-stage trapezoidal body 1232 is a26, the short side length of the isosceles trapezoidal surface is a27, the height of the isosceles trapezoidal surface is b9, and the height of the three-stage trapezoidal body 1232 is equal to h4 (see. Figure 7 ), the angle of the acute internal angle is θ4; the left inclined surface of the three-level trapezoidal body 1232 is rounded at the connection with the front end surface, and the chamfer radius is r3; the right inclined surface of the three-level trapezoidal body 1232 is rounded at the connection with the front end surface, and the chamfer radius is equal to r3; the distance from the left end of the rear end surface of the three-level trapezoidal body 1232 closest to the left inclined middle plate 1322 to the left end surface of the horizontal part of the three-level T-shaped power splitting cavity 1231 is a28, and the distance from the right end of the rear end surface of the three-level trapezoidal body 1232 closest to the left inclined middle plate 1322 to the right end surface of the horizontal part of the three-level T-shaped power splitting cavity 1231 is equal to a29; two adjacent three-level trapezoidal bodies 1232 satisfy the axially symmetrical arrangement, and the horizontal distance between the right end of the rear end surface of the three-level trapezoidal body 1232 and the left end of the rear end surface of the adjacent three-level trapezoidal body 1232 on the right is a30.

[0111] Figure 6 (e) Figure 6 (a) A local magnified view at D, as shown in Figure 6 (e) shown in combination Figure 5The four-level power division channel 124 is an axisymmetric structure. The four-level power division channel 124 is composed of N4 four-level T-shaped power division cavities 1241 and N4 four-level capsule columns 1242. The four-level capsule columns 1242 are made of metal materials. Each four-level T-shaped power division cavity 1241 has a four-level capsule column 1242. The four-level capsule column 1242 is located in the power division channel 12 dug by the power division filling body 11. The lower surface of the four-level capsule column 1242 is welded to the upper surface of the shell bottom plate 131. The welding surface is the hollow part of the lower bottom surface of the power division filling body 11. A part of the upper surface of the four-level capsule column 1242 is welded to the lower surface of the shell upper plate 133; the four-level T-shaped power division cavity 1 241 is composed of a rectangular cavity in the transverse part parallel to the OO' axis and a rectangular cavity in the longitudinal part parallel to the PP' axis, which intersect each other perpendicularly, i.e., a T-shape; the width of the transverse part of the four-stage T-shaped power splitting cavity 1241 is a31, the length is b10, and the depth is h4; the width of the longitudinal part of the four-stage T-shaped power splitting cavity 1241 is d, the length is b11, and the depth is h4; the front end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 is chamfered at both ends, the chamfer angle is θ1, and the chamfer radius is c4; a plane parallel to the left end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 and having a spacing of r9 from the left end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 is parallel to the left end face of the transverse part of the four-stage T-shaped power splitting cavity 1241, and the plane ... The left chamfered corner of the T-shaped power splitter cavity 1241 is rounded at the intersection, and the chamfer radius is equal to r7; the plane parallel to the left end face of the transverse part of the four-stage T-shaped power splitter cavity 1241, and the distance from the left end face of the transverse part of the four-stage T-shaped power splitter cavity 1241 is equal to r9, and the corner 1411 is rounded at the intersection with the left end face of the four-stage T-shaped power splitter cavity 1241, and the chamfer radius is equal to r9; the plane parallel to the right end face of the transverse part of the four-stage T-shaped power splitter cavity 1241, and the distance from the right end face of the transverse part of the four-stage T-shaped power splitter cavity 1241 is equal to r9, and the right chamfered corner of the four-stage T-shaped power splitter cavity 1241 is rounded at the intersection, and the chamfer radius is equal to r7; parallel to the transverse part of the four-stage T-shaped power splitter cavity 1241 The right end face of the part, and the plane whose spacing with the right end face of the horizontal part of the four-stage T-shaped power dividing cavity 1241 is equal to r9, is rounded 1412 at the intersection with the right end face of the four-stage T-shaped power dividing cavity 1241, and the chamfer radius is equal to r9; the horizontal distance from the left end face of the longitudinal part of the four-stage T-shaped power dividing cavity 1241 to the left end face of the horizontal part of the four-stage T-shaped power dividing cavity 1241 is equal to c4, and the horizontal distance from the right end face of the longitudinal part of the four-stage T-shaped power dividing cavity 1241 to the right end face of the horizontal part of the four-stage T-shaped power dividing cavity 1241 is equal to c4; the front end face of the horizontal part of the four-stage T-shaped power dividing cavity 1241 and the rear end face of the longitudinal part of the four-stage T-shaped power dividing cavity 1241 are rounded at both ends of the connection, and the chamfer radius is r8;The horizontal distance from the left end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 closest to the left longitudinal middle plate 1324 to the right end face of the left longitudinal middle plate 1324 is s4, and the horizontal distance from the right end face of the transverse part of the four-stage T-shaped power splitting cavity 1241 closest to the right longitudinal middle plate 1325 to the left end face of the right longitudinal middle plate 1325 is equal to s4; the four-stage T-shaped power splitting cavity 1241 closest to the left longitudinal middle plate 1324 is rounded at the intersection of the rounded corner 1411 with the left longitudinal middle plate 1324, and the chamfered corner The radius is r4; the four-stage T-shaped power splitter cavity 1241 closest to the right longitudinal middle plate 1325 is rounded at the intersection of the rounded corner 1412 and the right longitudinal middle plate 1325, and the chamfer radius is r4; the front end surface of the longitudinal part of the four-stage T-shaped power splitter cavity 1241 closest to the left longitudinal middle plate 1324 is rounded at the right end, and the chamfer radius is r10; the front end surface of the longitudinal part of the four-stage T-shaped power splitter cavity 1241 closest to the right longitudinal middle plate 1324 is rounded at the left end, and the chamfer radius is r10; The front end face of the longitudinal part of the four-stage T-shaped power splitting cavity 1241 which is the second closest to the left longitudinal middle plate 1324 is rounded at the left end, and the chamfer radius is r10; the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity 1241 which is the second closest to the right longitudinal middle plate 1325 is rounded at the right end, and the chamfer radius is equal to r10; the lateral parts of two adjacent four-stage T-shaped power splitting cavities 1241 are connected to each other, except for the two four-stage T-shaped power splitting cavities 1241 which are the closest to the left longitudinal middle plate 1324 and the two four-stage T-shaped power splitting cavities 1241 which are the closest to the right longitudinal middle plate 1325. In addition, the other two adjacent four-level T-shaped power division cavities 1241 satisfy the axially symmetrical arrangement; each four-level T-shaped power division cavity 1241 has a four-level capsule column 1242, the distance from the left end face of the four-level capsule column 1242 to the left end face of the four-level T-shaped power division cavity 1241 is a32, and the distance from the right end face of the four-level capsule column 1242 to the right end face of the four-level T-shaped power division cavity 1241 is equal to a32; the width of the four-level capsule column 1242 is a33, the length is b12, and the height is equal to h4 (see; Figure 7 ), both ends of the four-stage capsule column 1242 are rounded, and the chamfer radius is equal to r9; the distance from the front top of the four-stage capsule column 1242 to the front end face of the longitudinal part of the four-stage T-type power splitting cavity 1241 is b13; the horizontal distances between adjacent four-stage capsule columns 1242 are equal, and the horizontal distance between the right end face of the four-stage capsule column 1242 and the left end face of the adjacent four-stage capsule column 1242 on the right is a34. The transverse part of each four-stage T-type power splitting cavity 1241 is separated by the four-stage capsule column 1242 located therein, forming two interconnected channels, i.e., two ports, which serve as output ports for power distribution; N4 four-stage T-type power splitting cavities 1241 have a total of N output ports, and N and N4 satisfy N=N4*2.

[0112] like Figure 4As shown, the welding cover 2 is made of metal material to seal the power divider body 1 to ensure that the input microwave propagates in the power divider body 1. The width of the welding cover 2 is equal to a3, the length is b14, and the height is h7 (see Figure 7 ); the lower surface of the welding cover 2 is welded on the upper surface of the power divider filling body 11; the welding cover 2 is an axisymmetric structure, the left and right ends of the front surface of the welding cover 2 are chamfered, the chamfer angle is equal to θ1, and the chamfer radius is equal to c1; the left and right ends of the rear surface of the welding cover 2 are rounded, and the chamfer radius is equal to r1; the left chamfer of the welding cover 2 and the left end face of the welding cover 2 are connected at a rounded angle, and the chamfer radius is equal to r1; the right chamfer of the welding cover 2 and the right end face of the welding cover 2 are connected at a rounded angle, and the chamfer radius is equal to r1.

[0113] like Figure 3 As shown, the sealing plate 3 is a rectangular parallelepiped made of 30% glass fiber PEEK material, with a width equal to a3, a length equal to b14, and a height equal to h6 (see Figure 7 ); except that the height may not be equal, the sealing plate 3 and the welding cover 2 are exactly the same in shape, and the lower surface of the sealing plate 3 is fixed to the upper surface of the welding cover 2 with screws.

[0114] Fig. 9 yes Figure 3 Schematic diagram of the overall structure and partial enlarged diagram of the medium window 4. Fig. 9 (a) Yes Figure 3 The overall structural diagram of the medium window 4 is as follows: Fig. 9 As shown in (a), combined Figure 3 The dielectric window 4 is a rectangular cavity made of 30% glass fiber PEEK material, with a width of a0, a length of b15, and a height of h3. The front surface of the dielectric window 4 is fixed to the rear surface of the shell bottom plate 131, the rear surface of the left longitudinal middle plate 1324, the rear surface of the right longitudinal middle plate 1325, and the rear surface of the shell upper plate 133 of the power divider body 1 by screws. Fig. 9 As shown in (a), combined Figure 7 The front surface of the dielectric window 4 is at a distance h8 from the upper surface of the dielectric window 4 (see Figure 7 ), a first rectangular groove 411 is opened toward the rear surface of the medium window 4 (see Fig. 9 (a)), with a depth of s5 (see Figure 7 ); The first rectangular groove 411 has a width a5 and a height h9; Fig.11 yes Figure 3 The rear view of the medium window 4 is shown in FIG. Fig.11 As shown, combined Figure 7 The rear surface of the dielectric window 4 is at a distance h8 from the upper surface of the dielectric window 4 (see Figure 7 ), a second rectangular groove 412 is opened toward the front surface of the medium window 4, and the depth is equal to s5 (see Figure 7); the width of the second rectangular groove 412 is equal to a5, and the height is equal to h9; the front surface of the dielectric window 4 is at h10 from the lower surface of the dielectric window 4 (see Figure 7 ), a third rectangular groove 413 is opened toward the rear surface of the medium window 4, and the depth is equal to s5 (see Figure 7 ); the width of the third rectangular groove 413 is equal to a5, and the height is equal to h9; the rear surface of the dielectric window 4 is at h10 from the lower surface of the dielectric window 4 (see Figure 7 ), a fourth rectangular groove 414 is opened toward the front surface of the medium window 4, with a depth of s5 (see Figure 7 ); the fourth rectangular groove 414 has a width equal to a5 and a height equal to h9; Fig. 9 As shown in (a), a first rectangular plate 421 is filled in the first rectangular groove 411. The first rectangular plate 421 is a metal cuboid with a width equal to a5, a length equal to s5, and a height equal to h9; Fig.11 As shown, a second rectangular plate 422 is filled in the second rectangular groove 412. The second rectangular plate 422 is a metal cuboid with a width equal to a5, a length equal to s5, and a height equal to h9; Fig. 9 As shown in (a), a third rectangular plate 423 is filled in the third rectangular groove 413. The third rectangular plate 423 is a metal cuboid with a width equal to a5, a length equal to s5, and a height equal to h9; Fig.11 As shown, a fourth rectangular plate 424 is filled in the fourth rectangular groove 414. The fourth rectangular plate 424 is a metal cuboid with a width equal to a5, a length equal to s5, and a height equal to h9.

[0115] Fig.10 yes Fig. 9 The horizontal section view and local enlarged view along the RR' plane are as follows: Fig. 9 As shown in (a), the RR' plane coincides with the front surface of the first rectangular groove 411, Fig.10 (b) Fig.10 (a) Local magnified view at G; Fig. 9 (b) Fig. 9 (a) A local magnified view at E, as shown in Fig.10 As shown in (b), combined Fig. 9 (b) and Fig.11 The front surface of the dielectric window 4 is s6 away from the left end surface of the dielectric window 4, and a left rectangular through slot 431 is opened toward the rear surface of the dielectric window 4, and the depth is equal to b15. The left rectangular through slot 431 is a cuboid, with a width equal to s3 and a height h11 (see Fig. 9 (b)); The left rectangular through slot 431 is rounded at both ends, and the chamfer radius is r12 (see Fig. 9 (b)); Fig.10 As shown in (b), combined Fig. 9(b) Fill the fifth rectangular plate 425 from the front surface to the rear surface of the left rectangular through slot 431. The fifth rectangular plate 425 is a metal cuboid with a width equal to s3, a length equal to b16, and a height equal to h11 (see Fig. 9 (b)); The fifth rectangular plate 425 is rounded at both ends, and the chamfer radius is equal to r12 (see Fig. 9 (b)); Fig.10 As shown in (b), combined Fig.11 , fill the sixth rectangular plate 426 from the rear surface of the left rectangular through slot 431 to the front surface. The sixth rectangular plate 426 is a metal cuboid with a width equal to s3, a length equal to b16, and a height equal to h11 (see Fig. 9 (b)); The sixth rectangular plate 426 is rounded at both ends, and the chamfer radius is equal to r12 (see Fig. 9 (b)). Fig.10 (c) Fig.10 (a) Local magnified view at H, Fig. 9 (c) Fig. 9 (a) A local magnified view at F, as shown in Fig.10 (c) shown in combination Fig. 9 (c) The front surface of the dielectric window 4 is provided with a right rectangular through slot 432 at a position s6 away from the right end surface of the dielectric window 4, and toward the rear surface of the dielectric window 4, with a depth equal to b15, a width equal to s3, and a height equal to h11 (see Fig. 9 (c)); the right rectangular through slot 432 is rounded at both ends, and the chamfer radius is r12 (see Fig. 9 (c)). Fig.10 (c) shown in combination Fig. 9 (c) Fill the seventh rectangular plate 427 from the front surface to the rear surface of the right rectangular through slot 432. The seventh rectangular plate 427 is a metal cuboid with a width equal to s3, a length equal to b16, and a height equal to h11 (see Fig. 9 (c)); The seventh rectangular plate 427 is rounded at both ends, and the chamfer radius is equal to r12 (see Fig. 9 (c)); Fig.10 (c) shown in combination Fig.11 , fill the eighth rectangular plate 428 from the rear surface of the right rectangular through slot 432 to the front surface direction, the eighth rectangular plate 428 is a metal cuboid, the width is equal to s3, the length is equal to b16, and the height is equal to h11 (see Fig. 9 (c)); The eighth rectangular plate 428 is rounded at both ends, and the chamfer radius is equal to r12 (see Fig. 9 (c)). Fig. 9 As shown in (a), combined Fig. 9 (b) and Fig.10(b), the front end surface of the dielectric window 4 is provided with N5 triangular prism grooves 44 in sequence from left to right between the left rectangular through groove 431 and the right rectangular through groove 432 (see Fig.10 (b)); the upper end surface of the triangular prism groove 44 coincides with the lower surface of the first rectangular groove 411, and the lower end surface of the triangular prism groove 44 coincides with the upper surface of the third rectangular groove 413; the upper end surface of the triangular prism groove 44 is an equilateral triangle with a side length of s7; the height of the triangular prism groove 44 is equal to h4. The function of the triangular prism groove 44 is to increase the power capacity. The microwave first directly passes through the rectangle surrounded by the first rectangular plate 421, the third rectangular plate 423, the fifth rectangular plate 425, and the seventh rectangular plate 427 in the dielectric window 4, and then propagates through the rectangle surrounded by the second rectangular plate 422, the fourth rectangular plate 424, the sixth rectangular plate 426, and the eighth rectangular plate 428 in the dielectric window 4. The rear surface of the dielectric window 4 is connected to the front surface of the separation waveguide 5.

[0116] Fig.12 yes Figure 1 The overall structural diagram of the rectangular waveguide slot antenna 101 with a dielectric cover and a separating waveguide 5, a flange 6, a curved waveguide 7 is shown in FIG. The separating waveguide 5, the flange 6 and the curved waveguide 7 are all made of metal materials.

[0117] like Fig.12 As shown, combined Figure 2 , the separation waveguide 5 consists of a connecting plate 51 and a separation plate 52. Fig.15 yes Fig.12 A vertical cross-sectional view along the TT' plane, TT' is parallel to OO', is located on the upper surface of the partition plate 52, and is at a distance s8 from the right end surface of the partition plate 52 (see Fig.12 ).like Fig.12 As shown, combined Fig.15 The connecting plate 51 is a rectangular parallelepiped plate with a width equal to a0, a length equal to b17, and a height equal to h3. The partition plate 52 is composed of a partition upper plate 521 and a partition main body plate 522.

[0118] Fig.13 yes Fig.12 Horizontal section view of the middle separation waveguide 5 along the SS' plane. SS' is parallel to PP' and is located on the front surface of the connecting plate 51, and the distance from the upper surface of the connecting plate 51 is equal to h1 (see Fig.12 ).like Fig.13 As shown, combined Fig.15 , the partition plate 52 is a rectangular plate with a width of a35 (see Fig.13 ), length b18 (see Fig.15 ), height h12 (see Fig.15 ), h12<h3, the lower end of the rear surface of the partition plate 52 is chamfered (see Fig.15 ), the chamfer angle is equal to θ1, and the chamfer size is c5. Fig.13As shown, the upper surfaces of the connecting plate 51 and the partition plate 52 are on the same horizontal plane, the rear surface of the connecting plate 51 is welded to the front surface of the partition plate 52, the distance from the left end surface of the partition plate 52 to the left end surface of the connecting plate 51 is s9, and the distance from the right end surface of the partition plate 52 to the right end surface of the connecting plate 51 is equal to s9, a35=a0-2*s9.

[0119] Fig.14 yes Fig.12 The overall structure diagram of the partition plate 52 in the partition waveguide 5 is shown in FIG. Fig.14 As shown, the partition plate 52 is composed of a partition upper plate 521 and a partition main body plate 522, wherein the lower surface of the partition upper plate 521 is welded to the upper surface of the partition main body plate 522. The partition upper plate 521 is a rectangular parallelepiped plate, with a width equal to a35, a length equal to b18, and a height equal to h1. A series of through holes 5211 are opened from the upper surface to the lower surface of the partition upper plate 521, and the through holes 5211 have a depth equal to h1, a width of a36, and a length of b23. The through holes 5211 are staggered from the left end to the right end of the partition upper plate 521, and the distances from the through hole 5211 closest to the right end face of the partition upper plate 521 to the right end face and the rear end face of the partition upper plate 521 are equal, both equal to s5; the distance from the through hole 5211 closest to the left end face of the partition upper plate 521 to the left end face of the partition upper plate 521 is equal to s5, and the distance to the rear end face of the partition upper plate 521 is b21. The distance between the left and right end surfaces of two adjacent through holes 5211 is s11.

[0120] like Fig.12 As shown, combined Fig.15 A first rectangular through groove 511 is opened from the front surface of the connecting plate 51 to the rear surface, and the depth is equal to b17 (see Fig.15 ), the width is equal to a5, the height is equal to h4, the distance from the upper surface of the first rectangular through groove 511 to the upper surface of the connecting plate 51 is equal to h1; the distance from the lower surface of the first rectangular through groove 511 to the lower surface of the connecting plate 51 is equal to h2; the distance from the left end surface of the first rectangular through groove 511 to the left end surface of the connecting plate 51 is equal to s2 (see Fig.12 ); The distance from the right end surface of the first rectangular through groove 511 to the right end surface of the connecting plate 51 is equal to s2.

[0121] like Fig.13 As shown, combined Fig.14 The partition body plate 522 is a rectangular parallelepiped plate with a width equal to a35, a length equal to b18, a height h13, and a chamfered angle at the lower end of the rear surface (see Fig.15 ), the chamfer angle is equal to θ1, and the chamfer size is equal to c5. Fig.13As shown, there are two types of grooves in the partition main board 522, namely the large groove 5221 and the small groove 5222, both of which are grooves opened from the upper surface to the lower surface of the partition main board 522, and the depth is equal to h4. The distance from the right end face of the large groove 5221 closest to the right end face of the partition main board 522 to the right end face of the partition main board 522 is equal to s5; the distance from the left end face of the large groove 5221 closest to the left end face of the partition main board 522 to the left end face of the partition main board 522 is equal to s10; the distance from the right end face of the small groove 5222 closest to the right end face of the partition main board 522 to the right end face of the partition main board 522 is equal to s10; the distance from the left end face of the small groove 5222 closest to the left end face of the partition main board 522 to the left end face of the partition main board 522 is equal to s5; the large groove 5221 and the small groove 5222 are arranged alternately, and the distance between the left end face of the adjacent large groove 5221 and the right end face of the small groove 5222 is equal to s11; the distance from the rear surface of the large groove 5221 to the rear end face of the partition main board 522 is equal to s5. The two ends of the front surface of the large groove 5221 are rounded, and the chamfer radius is equal to r7; the two ends of the front surface of the small groove 5222 are rounded, and the chamfer radius is equal to r7. As Fig.13 shown, combined with Fig.15 , the depth of the large groove 5221 is equal to h4, the width is a36, the length is b19, and the rear surface of the large groove 5221 is chamfered, the chamfer angle is equal to θ1, and the chamfer size is c6.

[0122] Fig.16 is Fig.12 a vertical cross-sectional view along the UU' plane. UU' is parallel to TT', located on the upper surface of the partition board 52, and the distance from the right end face of the partition board 52 is s12 (see Fig.12 ). As Fig.13 shown, combined with Fig.16 , the depth of the small groove 5222 is equal to h4 (see Fig.16 ), the width is equal to a36 (see Fig.16 ), the length is b20 (b20 < b19), the rear surface of the small groove 5222 is chamfered, the chamfer angle is equal to θ1, and the chamfer size is equal to c6; the distance from the rear surface of the small groove 5222 to the rear surface of the partition main board 522 is b21.

[0123] Fig.17 is Figure 1 the overall structural schematic diagram of the middle flange 6, the overall structural schematic diagram of the flange bottom plate 61, and the overall structural schematic diagram of the flange middle plate 62; Fig.17 (a) is the overall structural schematic diagram of the flange 6; as Fig.17As shown in (a), the flange 6 is composed of a flange bottom plate 61, a flange middle plate 62, and a flange upper plate 63. The upper surface of the flange bottom plate 61 and the lower surface of the flange middle plate 62 are welded together, and the upper surface of the flange middle plate 62 and the lower surface of the flange upper plate 63 are welded together; the center points of the flange bottom plate 61, the flange middle plate 62, and the flange upper plate 63 coincide. Fig.17 (b) Yes Fig.17 (a) A schematic diagram of the overall structure of the flange bottom plate 61; Fig.17 As shown in (b), the flange bottom plate 61 is a rectangular plate with a width of a37, a length of b22, and a height of h14; a second rectangular through groove 611 is opened from the lower surface of the flange bottom plate 61 to the upper surface of the flange bottom plate 61, with a depth equal to h14, a width equal to a36, and a length equal to b23, and the center point of the second rectangular through groove 611 coincides with the center point of the flange bottom plate 61.

[0124] Fig.17 (c) Yes Fig.17 (a) A schematic diagram of the overall structure of the middle flange middle plate 62, as shown in FIG. Fig.17 As shown in (c), the flange middle plate 62 is a rectangular plate with a width of a39, a length of b25, and a height of h8; the lower surface of the flange middle plate 62 is flatly welded to the upper surface of the flange bottom plate 61; Fig.17 As shown in (c), a third rectangular through groove 621 is opened from the lower surface to the upper surface of the flange middle plate 62, with a depth equal to h8, a width a38, and a length b24; the center point of the third rectangular through groove 621 coincides with the center point of the flange middle plate 62.

[0125] like Fig.17 As shown in (a), the flange upper plate 63 is a rectangular parallelepiped plate with a width of a40, a length of b25, and a height of h15; a fourth rectangular through slot 631 is opened from the lower surface to the upper surface of the flange upper plate 63, with a depth of h15, a width of d, and a length of s10; the center point of the fourth rectangular through slot 631 coincides with the center point of the flange upper plate 63. The lower surfaces of the flange bottom plates 61 of the N flanges 6 are welded to the upper surface of the partition plate 52, and the second rectangular through slots 611 of the N flanges 6 are connected to the through holes 5211 respectively; the length of the second rectangular through slot 611 is equal to the length of the through hole 5211 (i.e., b23), and the width of the second rectangular through slot 611 is equal to the width of the through hole 5211, the width of the large groove 5221, and the width of the small groove 5222 (i.e., a36). The length of the fourth rectangular through slot 631 is equal to the length of the vertical waveguide 71 of the curved waveguide 7, the width of the fourth rectangular through slot 631 is equal to the width of the vertical waveguide 71, the vertical waveguide 71 is inserted into the fourth rectangular through slot 631 and fixed, and the insertion depth is equal to the depth h15 of the fourth rectangular through slot 631.

[0126] Fig.18 yes Figure 1The overall structure diagram, left side view and bottom view of the middle curved waveguide 7; Fig.18 (a) Yes Figure 1 Schematic diagram of the overall structure of the curved waveguide 7; Fig.18 As shown in (a), combined Fig.15 The curved waveguide 7 is composed of a vertical waveguide 71 and a horizontal waveguide 72 which are perpendicular to each other. Fig.18 (b) Yes Figure 1 The left side view of the curved waveguide 7 is shown in FIG. Fig.18 As shown in (b), combined Fig.18 (a), the vertical waveguide 71 is a rectangular parallelepiped plate with a width equal to d (see Fig.18 (a)), the length is equal to s10, the height is h18; the horizontal waveguide 72 is a rectangular plate, the width is equal to d (see Fig.18 (a)), the length is equal to b25, the height is equal to s10, the rear end of the upper surface of the horizontal waveguide 72 is chamfered, and the chamfer angle is equal to θ1. Fig.18 (b)), the chamfer dimension is c7. Fig.18 (c) Yes Figure 1 A bottom view of the curved waveguide 7 is shown in FIG. Fig.18 (c) shown in combination Fig.15 The vertical waveguide 71 opens a fifth rectangular through slot 711 from the lower surface to the upper surface, with a depth of h16 (see Fig.15 ), width equal to a38, length equal to b26; the distances from the front, rear, left, and right four end faces of the fifth rectangular through slot 711 to the front, rear, left, and right four end faces of the vertical waveguide 71 are equal, all equal to s17 (see Fig.18 (c)). Fig.18 As shown in (a), combined Fig.15 The horizontal waveguide 72 has a sixth rectangular through groove 721 on the front surface toward the rear surface, and the depth is b27 (see Fig.15 ), the width is equal to a38, the height is equal to b26, the rear end of the upper surface of the sixth rectangular through groove 721 is rounded, and the chamfer radius is r14 (see Fig.15 ), the distances from the upper, lower, left, and right end faces of the sixth rectangular through slot 721 to the upper, lower, left, and right end faces of the horizontal waveguide 72 are equal, and are all equal to s17 (see Fig.18 (a)); The distance from the rear end face of the sixth rectangular through slot 721 to the rear surface of the horizontal waveguide 72 is equal to s17.

[0127] like Fig.15 and Fig.16 As shown, the lower surface of the flange lower plate 61 of the flange 6 is welded to the upper surface of the partition plate 52 of the partition waveguide 5, each flange 6 corresponds to a through hole 5211, and the center point of the second rectangular through groove 611 coincides with the center point of the through hole 5211. Fig.12As shown, the distance between adjacent flanges 6 is 0, and the left end face of flange 6 is connected to the right end face of the adjacent left flange 6; the distance between the left end face of the flange bottom plate 61 of the flange 6 at the leftmost end of the partition plate 52 and the left end face of the partition plate 52 is equal to s18 (see Fig.12 ), the distance between the right end face of the flange bottom plate 61 of the flange 6 at the rightmost end of the partition plate 52 and the right end face of the partition plate 52 is equal to s18 (see Fig.12 ).like Fig.16 As shown, the vertical waveguides 71 of the N curved waveguides 7 are respectively inserted into the fourth rectangular through slots 631 of the N flange upper plates 63 , and the insertion depth is equal to the height h15 of the flange upper plate 63 .

[0128] Fig.19 1 is a schematic diagram of the overall structure of a high-power microwave rectangular waveguide slot antenna 101 with a dielectric cover; Fig.19 As shown, the rectangular waveguide slot antenna 101 with dielectric cover is composed of a dielectric cover 8, a slotted waveguide 9 (see Fig. 20 ), support column 10 (see Fig. 20 ), support rod 201 (see Fig.21 ), the dielectric cover 8 completely wraps the slotted waveguide 9, and the support column 10 and the support rod 201 are located between the dielectric cover 8 and the slotted waveguide 9. The end of the present invention close to the microwave source is defined as the input end, and the end away from the microwave source is defined as the output end; the open end of the dielectric cover 8 is connected to the curved waveguide 7 as the input port of the high-power waveguide slot array antenna with a dielectric cover, and the other end is a closed structure. The dielectric cover 8 is composed of a front cover 81, a main body cover 82, and a rear cover 83. The front cover 81 is located at the front end face of the main body cover 82, and the rear cover 83 is located at the rear end face of the main body cover 82. The front cover 81 and the rear cover 83 seal the main body cover 82. The front cover 81, the main body cover 82, and the rear cover 83 are all made of fiberglass. The dielectric cover 8 is a closed structure. The dielectric cover 8 is evacuated and filled with sulfur hexachloride gas.

[0129] Fig. 20 1 is a schematic diagram of the structure of the rectangular waveguide slot antenna 101 with dielectric cover after horizontal cutting along the II' plane. Fig. 20 As shown, the slotted waveguide 9 is connected to the front cover 81 by rivets.

[0130] Fig.21 yes Fig.19 The vertical section view along the JJ' plane is as follows: Fig. 20 As shown, combined Fig.21 The slotted waveguide 9 is composed of a rectangular bottom plate 91, two rectangular middle plates 92, and a rectangular upper plate 93, all of which are made of metal materials. The rectangular bottom plate 91, two rectangular middle plates 92, and the rectangular upper plate 93 together form a rectangular channel 94 (see Fig.19); for the convenience of description, the central axis XX' of the rectangular channel 94 is drawn along the input to output direction, point X is on the input end face, and point X' is on the rear cover 83; the longitudinal axis ZZ' is drawn through point X on the input end face, ZZ' is perpendicular to the rectangular bottom plate 91, the end away from the rectangular bottom plate 91, i.e., the Z end, is the upper end, and the end close to the rectangular bottom plate 91, i.e., the Z' end, is the lower end; the transverse axis YY' is drawn through point X on the input end face, the transverse axis YY' is perpendicular to the longitudinal axis ZZ', the Y end is the left end, and the Y' end is the right end. In order to prevent the appearance of grating lobes in the far-field radiation pattern, the width a41 of the slotted waveguide 9 should be smaller than the free space wavelength.

[0131] like Fig.21 As shown, the rectangular bottom plate 91 is a rectangular parallelepiped plate with a width equal to a41, a height of h19, and a length of b29 (see Fig. 22 ). The lower surfaces of the two rectangular middle plates 92 are welded to the left and right ends of the upper surface of the rectangular bottom plate 91 along the direction of the central axis XX', axially symmetrically about the central axis XX'; the rectangular middle plate 92 is a rectangular parallelepiped plate with a width of a42, a height of b26, and a length of b29. The lower surface of the rectangular upper plate 93 is welded to the upper surfaces of the two rectangular middle plates 92 along the direction of the central axis XX'; the rectangular upper plate 93 is a rectangular parallelepiped plate with a width of a41, a height of h9, and a length of b29. The rectangular bottom plate 91, the two rectangular middle plates 92, and the rectangular upper plate 93 together form a rectangular channel 94. The surfaces of the rectangular bottom plate 91, the two rectangular middle plates 92, and the rectangular upper plate 93 close to the axis XX' are the inner surfaces; the width of the rectangular channel 94 is equal to a38, the height is equal to b26, the length is equal to b29, and a38=a41-2*a42.

[0132] Fig. 22 yes Fig.19 Horizontal section view and partial enlarged view along II' plane; Fig. 22 (a) Yes Fig.19 Horizontal section view along plane II'; Fig. 22 (b) Fig. 22 (a) Local magnified view at K1; Fig. 22 (c) Fig. 22 (a) A local magnified view at K2. Fig. 22 (a) Fig. 22 (b) and Fig. 22As shown in (c), the rectangular upper plate 93 is provided with waveguide slots 95 along the ZZ' direction; the waveguide slots 95 are rectangular, there are K in total, the length is b34, the width is equal to a41, and the angle between them and the YY' axis is θ5. On the rectangular upper plate 93, the waveguide slots 95 closest to X are deflected away from the X direction by θ5 at the right end, and the next waveguide slot 95 is deflected close to the X direction by θ5, and they are arranged alternately on the rectangular upper plate 93; the waveguide slots 95 are slotted from the upper surface of the rectangular upper plate 93 to the direction close to the rectangular bottom plate 91, and the slot depth is c9, c9>h9 (see Fig. 20 ), the waveguide slot 95 connects the upper surface of the rectangular upper plate 93 and the rectangular channel 94; the axial spacing between adjacent waveguide slots 95 is b32, and the axial spacing between the waveguide slot 95 closest to the front cover 81 and the slotted waveguide 9 near the X end face is s23 (see Fig. 22 (a)), the axial distance from the waveguide slot 95 closest to the rear cover 83 to the slotted waveguide 9 near the X' end face is equal to s23 (see Fig. 22 (b)).

[0133] like Fig. 20 As shown, the support column 10 is a cylindrical column made of glass fiber reinforced plastic material, with a total of N6, a diameter of c8, and a height of h25 (see Fig.21 );like Fig. 22 As shown, N6 support columns 10 are distributed along the central axis XX' direction and fixed to the upper surface of the rectangular upper plate 93 with screws; the axial spacing between adjacent support columns 10 is b33, and the axial spacing between the support column 10 closest to the rear cover 83 and the rear cover 83 is s24.

[0134] like Fig.19 As shown, combined Fig. 20 and Fig.21 The main cover 82 is composed of a rectangular bottom cover plate 821, two rectangular middle cover plates 822, and a rectangular upper cover plate 823, all of which are made of glass fiber reinforced plastic. Fig.21 As shown, the rectangular bottom cover plate 821 is welded to the lower surface of the rectangular bottom plate 91 symmetrically about the XX' axis; the rectangular bottom cover plate 821 is a rectangular parallelepiped plate with a width of a43, a height of h20, and a length of b30 (see Fig. 20); Two rectangular middle cover plates 822 are symmetrically welded on the left and right ends of the upper surface of the rectangular bottom cover plate 821 about the central axis XX'; the rectangular middle cover plate 822 is a rectangular parallelepiped plate with a width of a44, a height of h21, and a length of b30; the rectangular upper cover plate 823 is flatly welded on the upper surface of the two rectangular middle cover plates 822, and the rectangular upper cover plate 823 is a rectangular parallelepiped plate with a width of a43, a height of h9, and a length of b30. The surfaces of the rectangular bottom cover plate 821, the two rectangular middle cover plates 822, and the rectangular upper cover plate 823 close to the axis XX' are the inner surfaces; the connection between the rectangular bottom cover plate 821 and the two rectangular middle cover plates 822 is rounded, and the chamfer radius of the inner surface is equal to r12, and the chamfer radius of the outer surface is equal to r7; the connection between the rectangular upper cover plate 823 and the two rectangular middle cover plates 822 is rounded, and the chamfer radius of the inner surface is equal to r2, and the chamfer radius of the outer surface is r15. The distance between the inner surface of the rectangular middle cover plate 822 and the outer surface of the adjacent rectangular middle plate 92 is a45 (see Fig.21 ), 2*a45+2*a44+a41=a43.

[0135] Fig.24 1 is a front view of the microwave input end face of the rectangular waveguide slot antenna 101 with dielectric cover. Fig.24 As shown, the dotted lines represent invisible structural lines. Fig. 20 , Fig. 22 and Fig.23 The front cover 81 is a convex metal cuboid with a width equal to a43, a height of h22, and a thickness of s22 (see Fig. 22 (c) and Fig.23 (b)). Fig.24 As shown, the front cover 81 has four rectangular grooves dug from the edge to the direction close to the central axis XX' in the four directions of top, bottom, left and right on the end surface away from X. The rectangular groove near Z' below is the third groove 811, the width of the third groove 811 is equal to the width a43 of the rectangular bottom cover plate 821, and the height of the third groove 811 is equal to the height h20 of the rectangular bottom cover plate 821; the rectangular groove near Y on the left is the fourth groove 812, the width of the fourth groove 812 is equal to the width a44 of the rectangular middle cover plate 822, and the height of the fourth groove 812 is equal to the height h20 of the rectangular middle cover plate 822 21; the rectangular groove on the left side near Y' is the fifth groove 813, the width of the fifth groove 813 is equal to the width a44 of the rectangular middle cover plate 822, and the height of the fifth groove 813 is equal to the height h21 of the rectangular middle cover plate 822; the rectangular groove on the upper side near Z is the sixth groove 814, the width of the sixth groove 814 is equal to the width a43 of the rectangular upper cover plate 823, and the height of the sixth groove 814 is equal to the height of the rectangular upper cover plate 823 (equal to h9); the third groove 811, the fourth groove 812, the fifth groove 813 and the sixth groove 814 have the same depth, which is s9 (see Fig. 22 (c) and Fig.23 (b)); the third groove 811, the fourth groove 812, the fifth groove 813 and the sixth groove 814 are connected to each other; the third groove 811 and the fourth groove 812 are rounded at the connection, the inner side chamfer radius close to X is equal to r12, and the outer side chamfer radius away from X is equal to r7; the third groove 811 and the fifth groove 813 are rounded at the connection, the inner side chamfer radius close to X is equal to r12, and the outer side chamfer radius away from X is equal to r7; the sixth groove 814 and the fourth groove 812 are rounded at the connection, the inner side chamfer radius close to X is equal to r2, and the outer side chamfer radius away from X is equal to r15; the sixth groove 814 and the fifth groove 813 are rounded at the connection, the inner side chamfer radius close to X is equal to r2, and the outer side chamfer radius away from X is equal to r15; Fig.24 As shown, the front cover 81 has a rectangular through slot 815 dug from the microwave input end surface along the central axis XX' direction, which is connected to the rectangular channel 94; the width of the rectangular through slot 815 is equal to the width a38 of the rectangular channel 94, the height of the rectangular through slot 815 is equal to the height b26 of the rectangular channel 94, and the depth is equal to s22 (see Fig. 22 (c) and Fig.23 (b)). The distance between the lower surface of the rectangular through slot 815 and the lower surface of the front cover 81 is s6, s6 = h19 + h20; the distance between the upper surface of the rectangular through slot 815 and the upper surface of the front cover 81 is s19, s19 = h9 + h25 + h9 (see Fig.21 ); The distance between the left surface of the rectangular through slot 815 and the left surface of the front cover 81 is a46, a46 = a42 + a44 + a45 (see Fig.21 ); the distance between the right surface of the rectangular through slot 815 and the right surface of the front cover 81 is equal to a46. The end surface of the front cover 81 away from X is fixedly connected to the end surface of the rectangular bottom cover plate 821, the rectangular middle cover plate 822, and the rectangular upper cover plate 823 of the main cover 82 close to X by screws. The front surface of the front cover 81 is welded to the front surface of the horizontal waveguide 72 in the curved waveguide 7, wherein the height of the rectangular through slot 815 is equal to the height of the sixth rectangular through slot 721 (equal to b26), the width is equal to the width of the sixth rectangular through slot 721 (equal to a38), and the height of the rectangular through slot 815 coincides with the center point of the sixth rectangular through slot 721 and is connected to each other.

[0136] Fig.25 FIG. 1 is a front view of the microwave output end face of the rectangular waveguide slot antenna 101 with a dielectric cover. Fig.25 As shown, the dotted lines represent invisible structural lines. Fig. 20 , Fig. 22 and Fig.23 The rear cover 83 is a convex metal cuboid with a width equal to a43, a height equal to h22, and a thickness equal to s22 (see Fig. 22 (b) and Fig.23(c)). Fig.25 As shown, the rear cover 83 has four rectangular grooves dug from the edge to the direction close to the central axis XX' in the four directions of top, bottom, left and right on the end face away from X'. The rectangular groove near Z' below the rear cover 83 is the seventh groove 831, the width of the seventh groove 831 is equal to the width a43 of the rectangular bottom cover plate 821, and the height of the seventh groove 831 is equal to the height h20 of the rectangular bottom cover plate 821; the rectangular groove near Y on the right is the eighth groove 832, the width of the eighth groove 832 is equal to the width a44 of the rectangular middle cover plate 822, and the height of the eighth groove 832 is equal to the height h20 of the rectangular middle cover plate 822. The rectangular groove on the right side near Y' is the ninth groove 833, the width of the ninth groove 833 is equal to the width a44 of the rectangular middle cover plate 822, and the height of the ninth groove 833 is equal to the height h21 of the rectangular middle cover plate 822; the rectangular groove on the upper side near Z is the tenth groove 834, the width of the tenth groove 834 is equal to the width a43 of the rectangular upper cover plate 823, and the height of the tenth groove 834 is equal to the height h9 of the rectangular upper cover plate 823; the seventh groove 831, the eighth groove 832, the ninth groove 833 and the tenth groove 834 have the same depth, which is equal to s9 (see Fig. 22 (c) and Fig.23 (b)); the seventh groove 831, the eighth groove 832, the ninth groove 833 and the tenth groove 834 are connected to each other; the seventh groove 831 and the eighth groove 832 are rounded at the connection, the inner side chamfer radius close to X' is equal to r12, and the outer side chamfer radius away from X' is equal to r7; the seventh groove 831 and the ninth groove 833 are rounded at the connection, the inner side chamfer radius close to X' is equal to r12, and the outer side chamfer radius away from X' is equal to r7; the tenth groove 834 and the eighth groove 832 are rounded at the connection, the inner side chamfer radius close to X' is equal to r2, and the outer side chamfer radius away from X' is equal to r15; the tenth groove 834 and the ninth groove 833 are rounded at the connection, the inner side chamfer radius close to X' is equal to r2, and the outer side chamfer radius away from X' is equal to r15; the axial distance from the rear cover 83 to the end face of the slotted waveguide 9 close to X' is equal to s4 (see Fig. 22 (b) and Fig.23 (c)), satisfying b30=b29+2*s9+s4 (see Fig.23 The end face of the rear cover 83 away from X' is fixedly connected to the end faces of the rectangular bottom cover plate 821, the rectangular middle cover plate 822, and the rectangular upper cover plate 823 of the main cover 82 close to X' by screws.

[0137] Fig.23 FIG. 1 is a side view of a cross-section of the rectangular waveguide slot antenna 101 with a dielectric cover according to the present invention after being cut horizontally along the MM' plane. Fig.23 (a) Fig.23 (b) Fig.23 (c) and Fig.21 As shown, the support rod 201 is a rectangular parallelepiped made of glass fiber reinforced plastic material, with a width equal to a45, a height of h23, and a length of b31. It is located between the rectangular middle plate 92 and the rectangular middle cover plate 822, and is fixed to the rectangular middle plate 92 with screws. There are N7 support rods 201 in total, and the N7 support rods 201 are divided into two rows, and the number of each row is equal to N7 / 2. They are symmetrically distributed on the left and right sides of the rectangular middle plate 92 along the central axis XX' direction. The lateral spacing between the two rows of support rods 201 is equal to a41, and the height spacing of the support rods 201 in the same row is s20 (see Fig.23 (b)), the distance between the support rod 201 closest to the rectangular bottom plate 91 and the lower surface of the rectangular bottom plate 91 is s21 (see Fig.21 ), the distance from the support rod 201 closest to the rectangular upper plate 93 to the upper surface of the rectangular upper plate 93 is equal to s21 (see Fig.23 (b)).

[0138] The slotted waveguide 9 radiates the microwaves received from the curved waveguide 7, and the dielectric cover 8 wraps the slotted waveguide 9 in the dielectric cover 8. The dielectric cover 8 is filled with sulfur hexachloride gas, which can achieve good airtightness and isolate the slotted waveguide 9 from the external environment. At the same time, it can withstand low temperatures of -50°C and high temperatures of 50°C.

[0139] like Fig.16 As shown, the front surface of the horizontal waveguide 72 in the curved waveguide 7 is welded to the front surface of the front cover 81 in the dielectric cover 8. The sixth rectangular through slot 721 is equal in height and width to the rectangular through slot 815, and the upper surface of the sixth rectangular through slot 721 is on the same horizontal plane as the upper surface of the rectangular through slot 815, the lower surface of the sixth rectangular through slot 721 is on the same horizontal plane as the lower surface of the rectangular through slot 815, the left surface of the sixth rectangular through slot 721 is on the same vertical plane as the left surface of the rectangular through slot 815, and the right surface of the sixth rectangular through slot 721 is on the same vertical plane as the right surface of the rectangular through slot 815.

[0140] The working process of the present invention is:

[0141] The through hole 1341 in the waveguide opening 134 of the power divider body 1 of the vacuum window sealed power divider 100 of the present invention is used as an input port to receive the rectangular waveguide TE received from the microwave source. 10 The mode microwave is input into N1 primary power division channels 121, and enters N1 primary power division channels 121 through the waveguide port 134. The primary power division channels 121 divide the rectangular waveguide TE 10 The mode microwave is divided into N2 parts and then input into the secondary power division channel 122; the secondary power division channel 122 divides the rectangular waveguide TE 10 The mode microwave is divided into N3 parts and then input into the three-level power division channel 123; the three-level power division channel 123 divides the rectangular waveguide TE10 The mode microwave is divided into N4 parts and then input into the four-level power division channel 124; the four-level power division channel 124 divides the rectangular waveguide TE 10 The mode microwave is divided into N parts, rectangular waveguide TE 10 The mode microwaves are transmitted from the N output ports of the power splitter body 1 through the rectangle formed by the first rectangular plate 421, the third rectangular plate 423, the fifth rectangular plate 425, and the seventh rectangular plate 427 in the dielectric window 4, and then through the rectangle formed by the second rectangular plate 422, the fourth rectangular plate 424, the sixth rectangular plate 426, and the eighth rectangular plate 428 in the dielectric window 4, and are output to the separation waveguide 5 to realize the power distribution of the N waveguides. The N microwave distributions enter the N curved waveguides 7 through the N flanges 6, and enter the N slotted waveguides 9. The slotted waveguides 9 radiate the microwaves, and the dielectric cover 8 wraps the slotted waveguide 9 in the dielectric cover 8. The dielectric cover 8 is filled with sulfur hexachloride gas, which can achieve good airtightness, isolate the slotted waveguide 9 from the external environment, and can withstand the low temperature of -50°C and the high temperature of 50°C.

[0142] The welding cover 2 seals the upper surface of the power divider body 1, ensuring that the input microwaves propagate in the power divider body 1 and reducing microwave leakage; the sealing plate 3 further seals the upper surface of the power divider body 1, thereby further reducing microwave leakage in the power divider body 1; the eight rectangular plates in the dielectric window 4 ensure that the microwaves are bound in the dielectric window 4 for propagation without leakage, ensuring electrical contact while ensuring airtightness, and the dielectric window 4 still ensures airtightness at high and low temperatures, thereby ensuring the normal use of the present invention at high and low temperatures. The triangular prism groove 44 increases the power capacity during power division and power combination.

[0143] Example 1

[0144] The following is an embodiment (let it be Embodiment 1) of a one-to-sixteen (i.e., N=16) high-power microwave waveguide slot antenna array for C-band (frequency range of 4-8 GHz, corresponding microwave wavelength range of 75.00-37.50 mm) with specific design dimensions (minimum frequency fmin=4 GHz, maximum frequency fmax=8 GHz):

[0145] According to the working frequency band and power allocation requirements, the electromagnetic simulation software CST Studio Suit was used for optimization after preliminary selection, and the main parameters of Example 1 obtained are as follows:

[0146] The width a3 of the bottom plate 131 of the housing is 643 mm, the length b1 is 204.9 mm, the height h1 is 20 mm, the chamfer angle θ1 of the left and right ends is 45°, and the chamfer dimension c1 is 135.5 mm; the width a2 of the horizontal middle plate 1321 is 382 mm, the height h3 is 94.2 mm, and the thickness s1 is 6 mm; the length L1 of the left inclined middle plate 1322 is 191.6 mm, the height h3 is 94.2 mm, and the thickness s1 is 6 mm; the length L1 of the right inclined middle plate 1323 is 191.6 mm, the height h3 is 94.2mm, thickness s1 = 6mm; left longitudinal middle plate 1324 has a length b2 = 75.4mm, height h3 = 94.2mm, thickness s1 = 6mm; right longitudinal middle plate 1325 has a length b2 = 75.4mm, height h3 = 94.2mm, thickness s1 = 6mm; housing upper plate 133 has a width a3 = 643mm, length b3 = 21mm, height h2 = 16mm; waveguide port 134 has a width a4 = 69mm, length b4 = 15mm, height h3 = 94.2mm; through hole 1341 Width d = 29mm, depth b3 = 21mm, height h4 = 58.2mm, distance h1 = 20mm between the lower surface of the through hole 1341 and the lower surface of the waveguide port 134, distance h2 = 25mm from the upper surface of the through hole 1341 to the upper surface of the waveguide port 134; width a5 = 640mm, length s3 = 3mm, depth h5 = 9mm, distance s1 = 6mm from the rear end face of the first groove 1311 to the rear end face of the housing bottom plate 131, distance s2 = 6mm from the left end face of the first groove 1311 to the left surface of the left longitudinal middle plate 1324 Distance s2=7.5mm, the distance from the right end face of the first groove 1311 to the right surface of the right longitudinal middle plate 1325 is s2=7.5mm; the width a5 of the second groove 1331 is 640mm, the length s3=3mm, the depth h6=5mm, the distance s1=6mm from the rear surface of the second groove 1331 to the rear surface of the outer shell upper plate 133, the distance s2=7.5mm from the left end face of the second groove 1331 to the left surface of the left longitudinal middle plate 1324, and the distance s2=7.5mm from the right end face of the second groove 1331 to the right surface of the right longitudinal middle plate 1325.

[0147] The power divider filling body 11 has a width a3=643mm, a length b1=204.9mm, and a height h4=58.2mm. The two ends of the front surface of the power divider filling body 11 are chamfered, and the chamfer angle is equal to θ1=45, and the chamfer size is equal to c1=135.5mm. The chamfer radius of the connection between the chamfer of the power divider filling body 11 and the left and right ends of the front surface of the power divider filling body 11 is r1=6mm; the chamfer radius of the connection between the left chamfer of the power divider filling body 11 and the left end surface of the power divider filling body 11 is r1=6mm; the chamfer radius of the connection between the right chamfer of the power divider filling body 11 and the right end surface of the power divider filling body 11 is r1=6mm.

[0148] The number of primary T-shaped power dividing chambers 1211 is N1=1, the width of the transverse part of the primary T-shaped power dividing chamber 1211 is a1=343.6mm, the length is d=29mm, the depth is h4=58.2mm, the chamfer angles at both ends are equal to θ1=45°, and the chamfer dimension is c2=25.8mm; the width of the longitudinal part of the primary T-shaped power dividing chamber 1211 is d=29mm, the length is b5=14mm, and the depth is h4=58.2mm; the horizontal distance from the left end face of the longitudinal part of the primary T-shaped power dividing chamber 1211 to the left end face of the transverse part of the primary T-shaped power dividing chamber 1211 is a10=157.3mm, and the horizontal distance from the right end face of the longitudinal part of the primary T-shaped power dividing chamber 1211 to the right end face of the transverse part of the primary T-shaped power dividing chamber 1211 is a10=157.3mm; the primary T-shaped power dividing chamber 1211 is The horizontal distance from the left end face of the transverse part 11 to the right surface of the left inclined middle plate 1322 is a6=59.7mm, and the horizontal distance from the right end face of the transverse part of the first-level T-shaped power dividing chamber 1211 to the left surface of the right inclined middle plate 1323 is a6=59.7mm; the long side length of the trapezoidal surface of the first-level trapezoidal body 1212 is a7=53.2mm, the short side length of the trapezoidal surface is a8=4.5mm, the height of the trapezoidal surface is b6=18.6mm, the height of the first-level trapezoidal body 1212 is h4=58.2mm, the acute internal angle θ2=40°, the distance from the left end of the rear end face of the first-level trapezoidal body 1212 to the left end of the transverse part of the first-level T-shaped power dividing chamber 1211 is a9=145.2mm, and the distance from the right end of the rear end face of the first-level trapezoidal body 1212 to the right end of the transverse part of the first-level T-shaped power dividing chamber 1211 is a9=145.2mm.

[0149] The number of secondary T-shaped power splitter cavities 1221 is N2=2, the width of the horizontal part of the secondary T-shaped power splitter 1221 is a11=185.1mm, the length is d=29mm, the depth is h4=58.2mm, the chamfer angles θ1=45° at both ends, and the chamfer dimension is c2=25.8mm; the width of the longitudinal part of the secondary T-shaped power splitter 1221 is d=29mm, the length is b7=16mm, and the depth is h4=58.2mm; the left end face of the longitudinal part of the secondary T-shaped power splitter 1221 closest to the left inclined middle plate 1322 to the secondary The horizontal distance a12=80.8mm from the left end face of the transverse part of the T-shaped power dividing chamber 1221, and the horizontal distance a13=75.3mm from the right end face of the longitudinal part of the secondary T-shaped power dividing chamber 1221 to the right end face of the transverse part of the secondary T-shaped power dividing chamber 1221; the horizontal distance a14=24.1mm from the left end face of the transverse part of the secondary T-shaped power dividing chamber 1221 closest to the left inclined middle plate 1322 to the right surface of the left inclined middle plate 1322, and the horizontal distance a15=24.1mm from the right end face of the transverse part of the secondary T-shaped power dividing chamber 1221 closest to the right inclined middle plate 1323 to The horizontal distance a14 of the left surface of the right inclined middle plate 1323 is 24.1 mm; the horizontal distance a15 of the right end face of the horizontal part of the secondary T-shaped power splitting cavity 1221 and the left end face of the horizontal part of the adjacent secondary T-shaped power splitting cavity 1221 on the right is 134.9 mm; the length of the long side of the isosceles trapezoidal surface of the secondary trapezoidal body 1222 is a16=45.5 mm, the length of the short side of the isosceles trapezoidal surface is a17=11 mm, the height b8 of the isosceles trapezoidal surface is 14.5 mm, the height h4 of the secondary trapezoidal body 1222 is 58.2 mm, and the acute internal angle θ3 =57.2°; the distance a18 from the left end of the rear end face of the secondary trapezoidal body 1222 closest to the left inclined middle plate 1322 to the left end face of the horizontal part of the secondary T-shaped power dividing chamber 1221 is =67.7mm, the distance a19 from the right end of the rear end face of the secondary trapezoidal body 1222 closest to the left inclined middle plate 1322 to the right end face of the horizontal part of the secondary T-shaped power dividing chamber 1221 is =71.9mm, and the horizontal distance a20 from the right end of the rear end face of the secondary trapezoidal body 1222 and the left end of the rear end face of the adjacent secondary trapezoidal body 1222 on the right is =278.7mm.

[0150] The number of three-stage T-shaped power splitter cavities 1231 is N3=4, the width of the transverse part of the three-stage T-shaped power splitter cavities 1231 is a21=109mm, the length is d=29mm, the depth is h4=58.2mm, the chamfer angles θ1 of the left and right ends are 45°, and the chamfer dimension is c3=25mm; the width of the longitudinal part of the three-stage T-shaped power splitter cavities 1231 is d=29mm, the length is b7=16mm, and the depth is h4=58.2mm; the left end face of the longitudinal part of the three-stage T-shaped power splitter cavities 1231 closest to the left inclined middle plate 1322 is from the three-stage T-shaped power splitter cavities 1 The horizontal distance a22 of the left end face of the transverse part of 231 is 42 mm, and the horizontal distance a23 of the right end face of the longitudinal part of the three-stage T-shaped power splitting cavity 1231 closest to the left inclined middle plate 1322 to the right end face of the transverse part of the three-stage T-shaped power splitting cavity 1231 is 38 mm; the horizontal distance a24 of the left end face of the transverse part of the three-stage T-shaped power splitting cavity 1231 closest to the left inclined middle plate 1322 to the left end face of the left inclined middle plate 1322 is 26.5 mm, and the horizontal part of the three-stage T-shaped power splitting cavity 1231 closest to the right inclined middle plate 1323 is 26.5 mm. The horizontal distance a24 from the right end face to the right end face of the right inclined middle plate 1323 is 26.5 mm; the horizontal distance a25 from the right end face of the transverse part of the three-stage T-shaped power splitting cavity 1231 to the left end face of the transverse part of the adjacent three-stage T-shaped power splitting cavity 1231 on the right is 50.9 mm; the length of the long side of the isosceles trapezoidal surface of the three-stage trapezoidal body 1232 is a26=38.6 mm, the length of the short side of the isosceles trapezoidal surface is a27=7 mm, the height of the isosceles trapezoidal surface is b9=17.7 mm, the height of the three-stage trapezoidal body 1232 is h4=58.2 mm, and the acute internal angle θ 4=66.2°; the distance a28 from the left end of the rear end face of the three-level trapezoidal body 1232 closest to the left inclined middle plate 1322 to the left end face of the horizontal part of the three-level T-shaped power dividing chamber 1231 is 32.6mm, the distance a29 from the right end of the rear end face of the three-level trapezoidal body 1232 closest to the left inclined middle plate 1322 to the right end face of the horizontal part of the three-level T-shaped power dividing chamber 1231 is 37.8mm, and the horizontal distance a30 from the right end of the rear end face of the three-level trapezoidal body 1232 and the left end of the rear end face of the adjacent three-level trapezoidal body 1232 on the right is 126.5mm.

[0151] The number of four-stage T-shaped power splitter cavities 1241 is N4=8, the width of the transverse part of the four-stage T-shaped power splitter cavities 1241 is a31=80mm, the length is b10=52.6mm, the depth is h4=58.2mm, the chamfer angles θ1 of the left and right ends are 45°, and the chamfer dimension is c4=25.4mm; the width of the longitudinal part of the four-stage T-shaped power splitter cavities 1241 is d=29mm, the length is b11=19.3mm, and the depth is h4=58.2mm; The horizontal distance c4 from the left end face of the longitudinal part of the T-shaped power splitting chamber 1241 to the left end face of the transverse part of the four-stage T-shaped power splitting chamber 1241 is 25.4 mm. The horizontal distance c4 from the right end face of the longitudinal part of the four-stage T-shaped power splitting chamber 1241 to the right end face of the transverse part of the four-stage T-shaped power splitting chamber 1241 is 25.4 mm. The horizontal distance c5 from the left end face of the transverse part of the four-stage T-shaped power splitting chamber 1241 closest to the left longitudinal middle plate 1324 to the right end face of the left longitudinal middle plate 1324 is 25.4 mm. The horizontal distance s4=1.5mm, the horizontal distance s4=1.5mm from the right end face of the transverse part of the four-stage T-shaped power dividing cavity 1241 closest to the right longitudinal middle plate 1325 to the left end face of the right longitudinal middle plate 1325; the distance a32=34.25mm from the left end face of the four-stage capsule column 1242 to the left end face of the four-stage T-shaped power dividing cavity 1241, the distance a32=34.25mm from the right end face of the four-stage capsule column 1242 to the right end face of the four-stage T-shaped power dividing cavity 1241 =34.25mm, the width of the fourth-level capsule column 1242 a33 =11.5mm, the length b12 =21.6mm, the height h4 =58.2mm, the distance from the front top of the fourth-level capsule column 1242 to the front end face of the longitudinal part of the fourth-level T-shaped power distribution cavity 1241 b13 =36.4mm, the horizontal distance between the right end face of the fourth-level capsule column 1242 and the left end face of the adjacent fourth-level capsule column 1242 on the right a34 =68.5mm.

[0152] The inner surface chamfer radius r1=6mm at the connection between the left end face of the horizontal middle plate 1321 and the right end face of the left inclined middle plate 1322, the inner surface chamfer radius r1=6mm at the connection between the right end face of the horizontal middle plate 1321 and the left end face of the right inclined middle plate 1323; the inner surface chamfer radius r1=6mm at the connection between the left end face of the left inclined middle plate 1322 and the front end face of the left longitudinal middle plate 1324; the inner surface chamfer radius r1=6mm at the connection between the right end face of the right inclined middle plate 1323 and the front end face of the right longitudinal middle plate 1325. The chamfer radius r1=6mm at the connection between the left end face of the upper plate 133 of the outer shell and the right end face of the left longitudinal middle plate 1324 away from O'. The chamfer radius of the outer surface where the rear end face of the waveguide port 134 connects with the front end face of the horizontal middle plate 1321 is r2=5mm; the chamfer radius of the left and right ends of the lower surface of the first groove 1311 is r11=8mm; the chamfer radius of the upper surface of the second groove 1331 is r2=5mm.

[0153] The chamfer radius of the rear surface of the chamfered angle of the first-stage T-shaped power dividing cavity 1211 and the left end surface of the horizontal part of the first-stage T-shaped power dividing cavity 1211 is r4=2.5mm, the chamfer radius of the connection between the right chamfered angle of the first-stage T-shaped power dividing cavity 1211 and the right end surface of the horizontal part of the first-stage T-shaped power dividing cavity 1211 is r4=2.5mm, and the chamfer radius of the connection between the chamfered angle of the first-stage T-shaped power dividing cavity 1211 and the two ends of the front surface of the horizontal part of the first-stage T-shaped power dividing cavity 1211 is r4=2.5mm; the first-stage T-shaped power dividing cavity The chamfer radius r3 = 10mm at both ends of the connection between the front end face of the transverse part 1211 and the rear end face of the longitudinal part of the first-stage T-shaped power dividing cavity 1211; the chamfer radius r4 = 2.5mm at the connection between the rear end face of the first-stage trapezoidal body 1212 and the rear end face of the transverse part of the first-stage T-shaped power dividing cavity 1211; the chamfer radius r5 = 3.5mm at the connection between the left inclined surface and the front end face of the first-stage trapezoidal body 1212, and the chamfer radius r5 = 3.5mm at the connection between the right inclined surface and the front end face of the first-stage trapezoidal body 1212.

[0154] The chamfer radius of the connection between the left chamfer of the secondary T-shaped power splitting cavity 1221 and the left end face of the horizontal part of the secondary T-shaped power splitting cavity 1221 is r4=2.5mm, the chamfer radius of the connection between the right chamfer of the secondary T-shaped power splitting cavity 1221 and the right end face of the horizontal part of the secondary T-shaped power splitting cavity 1221 is r4=2.5mm, and the chamfer radius of the connection between the chamfer of the secondary T-shaped power splitting cavity 1221 and the two ends of the front surface of the horizontal part of the secondary T-shaped power splitting cavity 1221 is equal to r4=2.5mm; the front end face of the longitudinal part of the secondary T-shaped power splitting cavity 1221 is at a distance from the horizontal part of the secondary T-shaped power splitting cavity 1221 The chamfer radius r3 of the end closer to the left and right end faces is 10mm; the chamfer radius r1 at both ends of the connection between the front end face of the horizontal part of the secondary T-shaped power dividing cavity 1221 and the rear end face of the longitudinal part of the secondary T-shaped power dividing cavity 1221 is 6mm; the chamfer radius r4 at both ends of the connection between the rear end face of the secondary trapezoidal body 1222 and the rear end face of the horizontal part of the secondary T-shaped power dividing cavity 1221 is 2.5mm; the chamfer radius r6 at the connection between the left inclined surface and the front end face of the secondary trapezoidal body 1222 is 12mm, and the chamfer radius r6 at the connection between the right inclined surface and the front end face of the secondary trapezoidal body 1222 is 12mm.

[0155] The chamfer radius r4 of the connection between the left chamfer of the three-stage T-shaped power dividing cavity 1231 and the left end face of the horizontal part of the three-stage T-shaped power dividing cavity 1231 is 2.5 mm, the chamfer radius r4 of the connection between the right chamfer of the three-stage T-shaped power dividing cavity 1231 and the right end face of the horizontal part of the three-stage T-shaped power dividing cavity 1231 is 2.5 mm, and the chamfer radius r4 of the connection between the chamfer of the three-stage T-shaped power dividing cavity 1231 and the two ends of the front surface of the horizontal part of the three-stage T-shaped power dividing cavity 1231 is 2.5 mm; the front end face of the longitudinal part of the three-stage T-shaped power dividing cavity 1231 is at a distance from the horizontal part of the three-stage T-shaped power dividing cavity 1231. The chamfer radius r3=10mm of the end closer to the left or right end face; the chamfer radius r7=3mm at both ends of the connection between the front end face of the transverse part of the three-stage T-shaped power dividing cavity 1231 and the rear end face of the longitudinal part of the three-stage T-shaped power dividing cavity 1231; the chamfer radius r4=2.5mm at both ends of the connection between the rear end face of the three-stage trapezoidal body 1232 and the rear end face of the transverse part of the three-stage T-shaped power dividing cavity 1231; the chamfer radius r3=10mm at the connection between the left inclined surface and the front end face of the three-stage trapezoidal body 1232, and the chamfer radius r3=10mm at the connection between the right inclined surface and the front end face of the three-stage trapezoidal body 1232.

[0156] A plane parallel to the left end face of the transverse portion of the four-stage T-shaped power dividing cavity 1241 and at a distance of r9=5.25mm to the left end face of the transverse portion of the four-stage T-shaped power dividing cavity 1241, at the intersection with the left chamfer of the four-stage T-shaped power dividing cavity 1241, the chamfer radius r7=3mm; a plane parallel to the left end face of the transverse portion of the four-stage T-shaped power dividing cavity 1241 and at a distance of r9=5.25mm to the left end face of the transverse portion of the four-stage T-shaped power dividing cavity 1241, at the intersection with the left end face of the four-stage T-shaped power dividing cavity 1241, the chamfer radius r9=5.25mm of the rounded corner 1411; The plane parallel to the right end face of the horizontal part of the fourth-stage T-shaped power dividing cavity 1241 and the distance to the right end face of the horizontal part of the fourth-stage T-shaped power dividing cavity 1241 is r9=5.25mm, and the chamfer radius r7=3mm at the intersection with the right chamfer of the fourth-stage T-shaped power dividing cavity 1241; the plane parallel to the right end face of the horizontal part of the fourth-stage T-shaped power dividing cavity 1241 and the distance to the right end face of the horizontal part of the fourth-stage T-shaped power dividing cavity 1241 is r9=5.25mm, and the chamfer radius r9=5.25mm at the intersection with the right end face of the fourth-stage T-shaped power dividing cavity 1241; the four-stage T-shaped power dividing cavity 12 The chamfer radius r8 of the front end face of the horizontal part 41 and the rear end face of the longitudinal part of the four-stage T-shaped power splitting cavity 1241 at both ends of the connection is 2mm; the chamfer radius r4 of the four-stage T-shaped power splitting cavity 1241 closest to the left longitudinal middle plate 1324 at the intersection of the rounded corner 1411 and the left longitudinal middle plate 1324 is 2.5mm; the chamfer radius r4 of the four-stage T-shaped power splitting cavity 1241 closest to the right longitudinal middle plate 1325 at the intersection of the rounded corner 1412 and the right longitudinal middle plate 1325 is 2.5mm; the four-stage T-shaped power splitting cavity 1241 closest to the left longitudinal middle plate 1324 is 2.5mm; The chamfer radius of the front end face of the longitudinal part of the fourth-level T-shaped power splitting cavity 1241 which is closest to the right longitudinal middle plate 1325 is r10=4mm at the left end; the chamfer radius of the front end face of the longitudinal part of the fourth-level T-shaped power splitting cavity 1241 which is second closest to the left longitudinal middle plate 1324 is r10=4mm at the left end; the chamfer radius of the front end face of the longitudinal part of the fourth-level T-shaped power splitting cavity 1241 which is second closest to the right longitudinal middle plate 1325 is r10=4mm at the right end; the chamfer radius of both ends of the fourth-level capsule column 1242 is r9=5.25mm.

[0157] The width a3 of the welding cover 2 is 643 mm, the length b14 is 183.9 mm, the height h7 is 12 mm, the chamfer angle θ1 of the left and right ends of the front surface of the welding cover 2 is 45°, and the chamfer dimension c1 is 135.5 mm. The chamfer radius r1 of the left and right ends of the rear surface of the welding cover 2 is 6 mm; the chamfer radius r1 of the connection between the chamfer of the welding cover 2 and the left and right ends of the front surface of the welding cover 2 is 6 mm; the chamfer radius r1 of the connection between the left chamfer of the welding cover 2 and the left end face of the welding cover 2 is 6 mm; the chamfer radius r1 of the connection between the right chamfer of the welding cover 2 and the right end face of the welding cover 2 is 6 mm.

[0158] The width a3 of the sealing plate 3 is 643 mm, the length b14 is 183.9 mm, the height h6 is 5 mm, the chamfer angles of the left and right ends of the front surface of the sealing plate 3 are equal to θ1=45°, and the chamfer size is equal to c1=135.5 mm. The chamfer radius of the left and right ends of the rear surface of the sealing plate 3 is r1=6 mm; the chamfer radius of the connection between the chamfer of the sealing plate 3 and the left and right ends of the front surface of the sealing plate 3 is r1=6 mm; the chamfer radius of the connection between the left chamfer of the sealing plate 3 and the left end face of the sealing plate 3 is r1=6 mm; the chamfer radius of the connection between the right chamfer of the sealing plate 3 and the right end face of the sealing plate 3 is r1=6 mm.

[0159] The width a0 of the medium window 4 is 655 mm, the length b15 is 20.6 mm, and the height h3 is 94.2 mm; the first rectangular groove 411 is opened at a distance of h8=13 mm from the upper surface of the medium window 4, with a width a5=640 mm, a height h9=3 mm, and a depth s5=9 mm; the second rectangular groove 412 is opened at a distance of h8=13 mm from the upper surface of the medium window 4, with a width a5=640 mm, a height h9=3 mm, and a depth s5=9 mm; the third rectangular groove 413 is opened at a distance of h10=17 mm from the lower surface of the medium window 4, with a width a5=640 mm, a height h9=3 mm, and a depth s5 =9mm; the fourth rectangular groove 414 is opened at a distance of h10=17mm from the lower surface of the medium window 4, with a width a5=640mm, a height h9=3mm, and a depth s5=9mm; the first rectangular plate 421 has a width a5=640mm, a length s5=9mm, and a height h9=3mm; the second rectangular plate 422 has a width a5=640mm, a length s5=9mm, and a height h9=3mm; the third rectangular plate 423 has a width a5=640mm, a length s5=9mm, and a height h9=3mm; the fourth rectangular plate 424 has a width a5=640mm, a length s5=9mm, and a height h9=3mm;

[0160] The left rectangular through slot 431 is opened at a distance of s6=3.5mm from the left end face of the medium window 4, and has a width of s3=3mm, a height of h11=66.2mm, a depth of b15=20.6mm, and a chamfer radius of r12=1.5mm at both ends; the fifth rectangular plate 425 has a width of s3=3mm, a length of b16=8.8mm, a height of h11=66.2mm, and a chamfer radius of r12=1.5mm at both ends; the sixth rectangular plate 426 has a width of s3=3mm, a length of b16=8.8mm, a height of h11=66.2mm, and a chamfer radius of r12=1.5mm at both ends; the right rectangular through slot 432 is opened at a distance of s6=3.5mm from the right end face of the medium window 4 5mm, the right rectangular through groove 432s3=3mm, height h11=66.2mm, depth b15=20.6mm, and the chamfer radius r12=1.5mm at both ends; the seventh rectangular plate 427 has a width of s3=3mm, a length of b16=8.8mm, a height h11=66.2mm, and the chamfer radius r12=1.5mm at both ends; the eighth rectangular plate 428 has a width of s3=3mm, a length of b16=8.8mm, a height h11=66.2mm, and the chamfer radius r12=1.5mm at both ends; the number of triangular prism grooves 44 is N5=640, the side length of the upper end face of the prism groove 44 is s7=1mm, and the height of the triangular prism groove 44 is h4=58.2mm.

[0161] The width a0 of the connecting plate 51 in the separating waveguide 5 is 655 mm, the length b17 is 10 mm, and the height h3 is 94.2 mm; the width a35 of the separating plate 52 is 645 mm, the length b18 is 110 mm, and the height h12 is 83.2 mm. The chamfer angle θ1 of the lower end of the rear surface of the separating plate 52 is 45°, and the chamfer dimension c5 is mm; the distance s9 from the left end surface of the separating plate 52 to the left end surface of the connecting plate 51 is 5 mm, and the distance s9 from the right end surface of the separating plate 52 to the right end surface of the connecting plate 51 is 5 mm. The first rectangular through groove 511 has a depth b17=10 mm, a width a5=640 mm, and a height h4=58.2 mm; a distance h1=20 mm from the upper surface of the first rectangular through groove 511 to the upper surface of the connecting plate 51; a distance h2=16 mm from the lower surface of the first rectangular through groove 511 to the lower surface of the connecting plate 51; a distance s2=7.5 mm from the left end surface of the first rectangular through groove 511 to the left end surface of the connecting plate 51; and a distance s2=7.5 mm from the right end surface of the first rectangular through groove 511 to the right end surface of the connecting plate 51.

[0162] The width a35 of the partition upper plate 521 is 645 mm, the length b18 is 110 mm, and the height h1 is 20 mm; the depth h1 of the through hole 5211 is 20 mm, the width a36 is 27 mm, and the length b23 is 76.2 mm. The distance s5 from the through hole 5211 closest to the left end face of the partition upper plate 521 to the left end face and the rear end face of the partition upper plate 521 is 9 mm; the distance s5 from the through hole 5211 closest to the right end face of the partition upper plate 521 to the right end face of the partition upper plate 521 is 9 mm, and the distance b21 to the rear end face of the partition upper plate 521 is 13 mm. The distance s11 between the left and right end faces of two adjacent through holes 5211 is 13 mm.

[0163] The partition body plate 522 has a width a35=645 mm, a length b18=110 mm, a height h13=63.2 mm, a chamfer angle θ1 of the lower end of the rear surface=45°, and a chamfer dimension c5=44 mm. The distance s5 from the right end face of the large groove 5221 closest to the right end face of the partition body plate 522 to the right end face of the partition body plate 522 is 9 mm; the distance s10 from the left end face of the large groove 5221 closest to the left end face of the partition body plate 522 to the left end face of the partition body plate 522 is 49 mm; the distance s10 from the right end face of the small groove 5222 closest to the right end face of the partition body plate 522 to the right end face of the partition body plate 522 is 49 mm; the distance s10 from the left end face of the small groove 5222 closest to the left end face of the partition body plate 522 to the left end face of the partition body plate 522 is 49 mm; the distance s11 from the left end face of the adjacent large groove 5221 to the right end face of the small groove 5222 is 13 mm; the distance s5 from the rear surface of the large groove 5221 to the rear end face of the partition body plate 522 is 9 mm. The front surfaces of the large groove 5221 are rounded at both ends, and the chamfer radius r7 = 3mm; the front surfaces of the small groove 5222 are rounded at both ends, and the chamfer radius r7 = 3mm. The depth of the large groove 5221 is h4 = 58.2mm, the width a36 = 27mm, and the length b19 = 101mm. The rear surface of the large groove 5221 is chamfered at θ1 = 45°, and the chamfer dimension c6 = 35.6mm. The depth of the small groove 5222 is h4 = 58.2mm, the width a36 = 27mm, and the length b20 = 77.9mm. The rear surface of the small groove 5222 is chamfered at θ1 = 45°, and the chamfer dimension c6 = 35.6mm. The distance b21 from the rear surface of the small groove 5222 to the rear surface of the partition body plate 5222 is 32.1mm.

[0164] The width a37 of the flange bottom plate 61 is 40 mm, the length b22 is 76.2 mm, and the height h14 is 8.2 mm. The depth h16 of the second rectangular through groove 611 is 8.4 mm, the width a38 is 25 mm, and the length b24 is 51 mm. The width a39 of the flange middle plate 62 is 31 mm, the length b25 is 61.5 mm, and the height h8 is 13 mm. The depth h8 of the third rectangular through groove 621 is 13 mm, the width a38 is 25 mm, and the length b24 is 51 mm. The width a40 of the flange upper plate 63 is 34 mm, the length b25 is 61.5 mm, and the height h15 is 4 mm. The depth h15 of the fourth rectangular through groove 631 is 4 mm, the width d is 29 mm, and the length s10 is 49 mm.

[0165] The width of the vertical waveguide 71 is d=29 mm, the length is s10=49 mm, and the height is h18=53.6 mm. The width of the horizontal waveguide 72 is d=29 mm, the length is b25=55 mm, and the height is s10=49 mm. The chamfer angle θ1 of the rear end of the upper surface of the horizontal waveguide 72 is 45°, and the chamfer dimension is c7=30.6 mm. The depth of the fifth rectangular through groove 711 is h16=55.6 mm, the width is a38=25 mm, and the length is b26=45 mm. The distances from the front, back, left, and right end faces of the fifth rectangular through groove 711 to the front, back, left, and right end faces of the vertical waveguide 71 are equal to s17=2 mm. The sixth rectangular through slot 721 has a depth b27=53mm, a width a38=25mm, a height b26=45mm, a rounded corner radius r14=50.3mm at the rear end of the upper surface of the sixth rectangular through slot 721, and a distance s17=2mm from the upper, lower, left, and right end faces of the sixth rectangular through slot 721 to the upper, lower, left, and right end faces of the horizontal waveguide 72; the distance s17=2mm from the rear end face of the sixth rectangular through slot 721 to the rear surface of the horizontal waveguide 72. The eighth rectangular groove 722 has a depth s17=2mm, a width a38=25mm, and a length b26=45mm.

[0166] The distance s6 from the front surface of the second rectangular through slot 611 to the front surface of the through hole 5211 is 3.5 mm, and the distance s6 from the rear surface of the second rectangular through slot 611 to the rear surface of the through hole 5211 is 3.5 mm. The distance s18 from the left end surface of the flange bottom plate 61 of the flange 6 at the leftmost end of the partition plate 52 to the left end surface of the partition plate 52 is 2.5 mm, and the distance s18 from the right end surface of the flange bottom plate 61 of the flange 6 at the rightmost end of the partition plate 52 to the right end surface of the partition plate 52 is 2.5 mm.

[0167] To meet the requirement of X-band microwave in the slotted waveguide 9 with TE 10For mode transmission, it is necessary to adjust the width a41 and height h24 of the slotted waveguide 9. After preliminary selection, the electromagnetic simulation software CST Studio Suit is used for optimization to obtain a41 = 28 mm, h24 = 49.5 mm; the width of the rectangular bottom plate 91 is a41 = 28 mm, the height is h19 = 1.5 mm, and the length is b29 = 525 mm; the width of the rectangular middle plate 92 is a42 = 1.5 mm, the height is b26 = 45 mm, and the length is b29 = 525 mm; the width of the rectangular bottom plate 91 is a41 = 28 mm, the height is h9 = 3 mm, and the length is b29 = 525 mm; the width of the rectangular channel 94 is a38 = 25 mm, the height is b26 = 45 mm, and the length is b29 = 525 mm.

[0168] The number of waveguide slots 95 is K=20, the width is a41=28, the length is b34=9mm, the inclination angle is θ5=5°, the depth is c9=3.6mm, the axial spacing between adjacent waveguide slots 95 is b32=25mm, the axial spacing between the waveguide slot 95 closest to the front cover 81 and the slotted waveguide 9 near the X end face is s23=25mm, and the axial spacing between the waveguide slot 95 closest to the rear cover 83 and the slotted waveguide 9 near the X' end face is s23=25mm.

[0169] The number of support columns 10 is N6=3, the diameter is c8=6 mm, the height is h25=16.1 mm, the axial spacing between adjacent support columns 10 is b33=174 mm, and the axial spacing between the support column 10 closest to the rear cover 83 and the rear cover 83 is s234=11 mm. The number of support rods 201 is N7=4, the width is a45=1.9 mm, the height is h23=1.8 mm, the length is b31=526.5 mm, the lateral spacing between two rows of support rods 201 (two in one row) is a41=28 mm, the height spacing between support rods 201 in the same row is s20=17.1 mm, the height spacing between the support rods 201 closest to the rectangular bottom plate 91 and the lower surface of the rectangular bottom plate 91 is s21=16.2 mm, and the longitudinal distance between the support rods 201 closest to the rectangular upper plate 93 and the upper surface of the rectangular upper plate 93 is s21=16.2 mm.

[0170] In order to ensure that the dielectric cover 8 completely wraps the slotted waveguide 9, ensure the sealing of the dielectric cover 8, and minimize the impact on the slotted waveguide 9, it is necessary to adjust the width a43 and height h22 of the dielectric cover 8, the thickness s22 of the front cover 81, and the depth s9 of the first annular groove 111. After preliminary selection, the electromagnetic simulation software CST Studio Suit is used for optimization to obtain a43=35.8mm, h22=70.6mm, s22=6.5mm, s9=5mm; the width of the dielectric cover 8 is a43=35.8, the height is h22=70.6, and the length is b28=; the width of the rectangular bottom cover plate 821 is a43=35.8mm, the height is h20=2mm, and the length is b30=536.5mm; the width of the rectangular middle cover plate 822 is a44=2mm, the height is h21=65.6mm, and the length is b30=536.5mm; the rectangular upper cover plate 82 3 has a width a43 = 35.8 mm, a height h9 = 3 mm, and a length b30 = 536.5 mm; the front cover 81 has a width a43 = 35.8 mm, a height h22 = 70.6 mm, and a thickness s22 = 6.5 mm; the third groove 811 has a width a43 = 35.8 mm, a height h20 = 2 mm, and a depth s9 = 5 mm; the fourth groove 812 has a width a44 = 2 mm, a height h21 = 65.6 mm, and a depth s9 = 5 mm; the fifth groove 813 has a width a44 = 2 mm, a height h 21=65.6mm, depth s9=5mm; the width a43=35.8mm, height h9=3mm, depth s9=5mm of the sixth groove 814; the width a38=25mm, height h9=3mm, depth s22=6.5mm of the rectangular through groove 815, the distance a46=5.4mm between the left surface of the rectangular through groove 815 and the left surface of the front cover 81; the width a43=35.8mm, height h22=70.6mm, thickness s22=6.5mm of the rear cover 83; the seventh groove 831 The width a43=35.8mm, height h20=2mm, depth s9=5mm of the eighth groove 832; the width a44=2mm, height h21=65.6mm, depth s9=5mm of the ninth groove 833; the width a44=2mm, height h21=65.6mm, depth s9=5mm of the tenth groove 834; the width a43=35.8mm, height h9=3mm, depth s9=5mm of the rear cover 83 to the slit waveguide 9 close to the X' end face s4=1.5mm.

[0171] The chamfer radius r12 of the inner surface of the connection between the rectangular bottom cover plate 821 and the two rectangular middle cover plates 822 is 1.5mm, the chamfer radius r7 of the outer surface of the connection between the rectangular bottom cover plate 821 and the two rectangular middle cover plates 822 is 3mm, the chamfer radius r2 of the inner surface of the connection between the rectangular upper cover plate 823 and the two rectangular middle cover plates 822 is 5mm, and the chamfer radius r15 of the outer surface of the connection between the rectangular upper cover plate 823 and the two rectangular middle cover plates 822 is 7mm; the chamfer radius r12 of the inner side surface close to X at the connection between the third groove 811 and the fourth groove 812 is 1.5mm, and the chamfer radius r7 of the outer side surface away from X is 3mm; the chamfer radius r12 of the inner side surface close to X at the connection between the third groove 811 and the fifth groove 813 is 1.5mm, and the chamfer radius r7 of the outer side surface away from X is 3mm; the chamfer radius r2 of the inner side surface close to X at the connection between the sixth groove 814 and the fourth groove 812 is 5mm, and the chamfer radius r15 of the outer surface away from X is 7mm. The chamfer radius of the outer side surface of X is r15=7mm; the chamfer radius of the inner side surface close to X at the connection between the sixth groove 814 and the fifth groove 813 is r2=5mm, and the chamfer radius of the outer side surface away from X is r15=7mm; the chamfer radius of the inner side surface close to X' at the connection between the seventh groove 831 and the eighth groove 832 is r12=1.5mm, and the chamfer radius of the outer side surface away from X' is r7=3mm; the chamfer radius of the inner side surface close to X' at the connection between the seventh groove 831 and the ninth groove 833 is r12=1.5mm, and the chamfer radius of the outer side surface away from X' is r7=3mm; the chamfer radius of the inner side surface close to X' at the connection between the tenth groove 834 and the eighth groove 832 is r2=5mm, and the chamfer radius of the outer side surface away from X' is r15=7mm; the chamfer radius of the inner side surface close to X' at the connection between the tenth groove 834 and the ninth groove 833 is r2=5mm, and the chamfer radius of the outer side surface away from X' is r15=7mm. Fig.26 The electric field distribution characteristic results are obtained by simulating Example 1 using electromagnetic simulation software CST Studio Suit when the input microwave power of Example 1 is 0.5 W at an operating frequency of 4.3 GHz. Fig.26 The left side is the electric field intensity distribution diagram of Example 1, wherein the portion outside the rectangular frame is the electric field intensity distribution of the power divider in Example 1; Fig.26 The right side is a graph showing the specific values ​​of the electric field strength (the color of the electric field strength on the left corresponds to the specific value of the electric field strength on the right). Fig.26It can be seen on the left that the electric field distribution changes from one path to sixteen paths (see the rectangular frame), and except for the position of Example 1, there is no electric field in other areas, indicating that there is no microwave leakage; it can be concluded that the power divider in Example 1 can effectively achieve a one-to-sixteen power distribution, and ensure the sealing and vacuum state of the power divider in Example 1 when transmitting microwaves to the external antenna transmission system. Since the temperature changes of 50°C and -50°C in a vacuum state will not affect the transmission characteristics of microwaves, the power divider in Example 1 was placed at 50°C and -50°C for experimental verification, which proved that the power divider in Example 1 can still complete power distribution at 50°C and -50°C. Fig.26 The specific value of the electric field on the right is shown, the interior of Example 1 (from Fig.26 On the right, the color of the maximum electric field intensity is red. On the left, the maximum electric field intensity is at the connection between the waveguide port and the longitudinal part of the first-stage T-shaped power splitter cavity. 0.5W is 976V / m. According to the electric field breakdown threshold E under vacuum conditions b is 700kV / m, The power capacity P of the power divider of Example 1 under vacuum conditions can be calculated as follows: b It can reach 2.57GW. The longest length of the power divider in Example 1 is 204.9mm, and the widest width is 655mm. These simulation results show that the power divider in Example 1 has a compact structure, a small volume, and a large power capacity. It can be used at low temperatures of -50°C and high temperatures of 50°C, and has extremely high practical value in technical fields such as HPM channel power allocation.

[0172] Fig. 27 When the input microwave power of the rectangular waveguide slot array antenna in Example 1 is 0.5 W at an operating frequency of 4.3 GHz, the rectangular waveguide slot array antenna in the power divider in Example 1 is simulated using electromagnetic simulation software CST Studio Suit, and the electric field distribution characteristic results are obtained. Fig. 27 The left side is the electric field intensity distribution diagram of the rectangular waveguide slot array antenna in Example 1. Fig. 27 The right side is the specific value diagram of the electric field strength (the color of the electric field strength on the left corresponds to the specific value of the electric field strength on the right), Fig. 27 It can be seen from the left that, except for the position where the rectangular waveguide slot array antenna in Example 1 is located, there is no electric field in other areas, indicating that there is no microwave leakage, proving that the rectangular waveguide slot array antenna in Example 1 can still radiate microwaves outward at 50°C and -50°C. Fig.28 is the two-dimensional radiation pattern of the rectangular waveguide slot array antenna in Example 1 at an operating frequency of 4.3 GHz, Fig.28 The vertical axis is the gain of the antenna, the unit is dBi, and the horizontal axis theta is the antenna pitch scanning angle, the unit is degree. Fig.28 As shown in the figure, the gain at 4.3GHz in the C band is 36.3dBi, and the first sidelobe level is -13.4dB. Fig.28 It can be seen that the rectangular waveguide slot array antenna in Example 1 has a higher gain and a relatively low first sidelobe level.

[0173] Combination Fig.26 , Fig. 27 Fig.28 Embodiment 1 has a compact structure, a small volume, a large power capacity, can be used at low temperatures of -50°C and high temperatures of 50°C, and has extremely high practical value in the field of HPM technology.

Claims

1. A high-power microwave waveguide slot antenna array, comprising a power divider and N rectangular waveguide slot antennas, characterized in that The power divider is a vacuum window sealed power divider (100), the rectangular waveguide slot antenna is a rectangular waveguide slot antenna with a dielectric cover (101), the vacuum window sealed power divider (100) and N rectangular waveguide slot antennas with dielectric covers (101) are connected by a separation waveguide (5), N groups of flanges (6), and N curved waveguides (7); the end of the high-power microwave waveguide slot antenna array close to the microwave source is defined as the input end, and the end far from the microwave source is defined as the output end; the vacuum window sealed power divider (100 ) has an input port connected to an external microwave source, the vacuum window sealed power divider (100) performs power division on the microwaves received from the microwave source, divides the microwaves into N groups of microwaves and inputs them into the separation waveguide (5), the separation waveguide (5) inputs the N groups of microwaves into N rectangular waveguide slot antennas with dielectric covers (101) through N groups of flanges (6) and curved waveguides (7), and the N rectangular waveguide slot antennas with dielectric covers (101) radiate the microwaves; N is a positive integer, which is equal to the power fraction to be achieved; The vacuum window sealed power divider (100) is composed of a power divider body (1), a welding cover (2), a sealing plate (3), and a dielectric window (4); the power divider body (1) has an input port connected to an external microwave source to receive microwaves to be power-divided output by the microwave source; the power divider body (1) has N output ports, namely, a first output port, a second output port, ..., an nth output port, ..., an Nth output port, connected to the dielectric window (4), and the dielectric window (4) is connected to a separation waveguide (5); along the input to the output Direction, draw a central axis OO' on the upper surface of the sealing plate (3), point O is on the input end surface of the vacuum window sealed power divider (100), point O' is on the dielectric window (4), and the vacuum window sealed power divider (100) is symmetrical about the central axis OO'; draw a horizontal axis PP' through point O on the upper surface of the sealing plate (3), PP' is perpendicular to OO', P is the left end, and P' is the right end; let the end close to the central axis OO' in the vertical direction be the upper end, and the end away from the central axis OO' be the lower end; along the central axis OO', the point close to O is the front end , the rear end is near point O'; the power divider body (1) has an input port at point O, and has N output ports near point O' connected to the dielectric window (4); the power divider body (1) is a rectangular parallelepiped with chamfered angles at both ends of the front surface, and is made of metal material; the input port of the power divider body (1) is connected to the microwave source to receive microwaves input by the microwave source; the welding cover (2) is a rectangular parallelepiped plate with chamfered angles at both ends of the front surface, the chamfered angles of the front surface match the chamfered angles at both ends of the front surface of the power divider body (1), and is made of metal material , sealing the upper surface of the power divider body (1) to ensure that the input microwaves propagate in the power divider body (1) and reduce microwave leakage; the sealing plate (3) is of the same shape as the welding cover (2), and is also a rectangular plate with chamfered corners at both ends of the front surface, made of 30% glass fiber PEEK material, and is located on the upper surface of the welding cover (2). The function is to further seal the upper surface of the power divider body (1) on the basis of the welding cover (2) sealing the upper surface of the power divider body (1), thereby further reducing microwave leakage in the power divider body (1); The dielectric window (4) is connected to the N output ports of the power divider body (1), and has the function of transmitting the N groups of microwaves received from the N output ports of the power divider body (1) after power division to the separation waveguide (5) during power division, and ensuring airtightness at high and low temperatures; The rear surface of the dielectric window (4) of the vacuum window sealed power divider (100) is welded to the front surface of the separation waveguide (5); N flanges (6) are welded to the upper surface of the separation waveguide (5); the lower surfaces of the N flanges (6) are respectively welded to the upper surface of the separation waveguide (5); the flange upper plates (63) of the N flanges (6) are respectively connected to the N curved waveguides (7) in sequence; the N curved waveguides (7) are respectively connected to the N rectangular waveguide slot antennas (101) with dielectric covers in sequence; The welding cover (2) is welded to the upper surface of the power divider body (1), and the sealing plate (3) is fixed to the upper surface of the welding cover (2) by screws; The power divider body (1) is made of metal material and is composed of a power divider filling body (11) and a main body shell (13). The main body shell (13) is composed of four parts: a shell bottom plate (131), a shell middle plate (132), a shell middle plate (133) and a waveguide port (134). The power divider filling body (11) is located between a welding cover (2) and the shell bottom plate (131) of the main body shell (13), and the outer wall is wrapped by the main body shell (13). A power divider channel (12) is dug in the power divider filling body (11). The power divider channel (12) is divided into a primary power divider channel (121), a secondary power divider channel (122), a tertiary power divider channel (123) and a quaternary power divider channel (124) according to function. The primary power divider channel (121) and the secondary power divider channel (122) are connected, and the tertiary power divider channel (123) and the quaternary power divider channel (124) are arranged in sequence from O to O' and are connected to each other from front to back. The housing middle plate (133) is closest to OO', the upper surface of the housing middle plate (132) is welded to the lower surface of the housing middle plate (133), the housing bottom plate (131) is farthest from OO', the upper surface of the housing bottom plate (131) is welded to the lower surface of the housing middle plate (132), and the rear surface of the waveguide port (134) is welded to the front surface of the housing middle plate (132); the housing bottom plate (131) is a rectangular parallelepiped plate with a width of a3, a length of b1, and a height of h1. The housing bottom plate (131) is axially symmetrical. The structure comprises a shell bottom plate (131) having chamfered left and right ends at the front surface, the chamfer angle being θ1 and the chamfer size being c1; the connection between the chamfered surface of the shell bottom plate (131) and the left and right ends of the front surface of the shell bottom plate (131) is rounded, and the chamfer radius is r1; the connection between the surface at the left end of the chamfered surface of the shell bottom plate (131) and the left end surface of the shell bottom plate (131) is rounded, and the chamfer radius is r1; the connection between the surface at the right end of the chamfered surface of the shell bottom plate (131) and the right end surface of the shell bottom plate (131) is rounded, and the chamfer radius is r1; The shell middle plate (132) is composed of a transverse middle plate (1321), a left inclined middle plate (1322) and a right inclined middle plate (1323) symmetrical about the OO' axis, and a left longitudinal middle plate (1324) and a right longitudinal middle plate (1325) symmetrical about the OO' axis. The transverse middle plate (1321), the left inclined middle plate (1322), the right inclined middle plate (1323), the left longitudinal middle plate (1324), and the right longitudinal middle plate (1325) are all rectangular plates, with a height of h3 and a thickness of s1. The lower end of the rear surface of the transverse middle plate (1321) is welded to the front surface of the shell bottom plate (131), and the width of the transverse middle plate (1321) is a2. The lengths of the oblique middle plate (1322) and the right oblique middle plate (1323) are both L1; the lower end of the right surface of the left longitudinal middle plate (1324) is welded to the left surface of the shell bottom plate (131), and the lower end of the left surface of the right longitudinal middle plate (1325) is welded to the right surface of the shell bottom plate (131); the lengths of the left longitudinal middle plate (1324) and the right longitudinal middle plate (1325) are both b2; the left end surface of the transverse middle plate (1321) is welded to the right end surface of the left oblique middle plate (1322), and the right end surface of the transverse middle plate (1321) is welded to the left end surface of the right oblique middle plate (1323), and the inner surface of the connection is rounded, and the chamfer radius is equal to r1; the left oblique middle plate (1324) is welded to the right end surface of the left oblique middle plate (1322), and the right end surface of the transverse middle plate (1321) is welded to the left end surface of the right oblique middle plate (1323), and the inner surface of the connection is rounded, and the chamfer radius is equal to r1; The left end face of the middle plate (1322) is welded to the front end face of the left longitudinal middle plate (1324), and the inner surface of the connection is chamfered, and the chamfer radius is equal to r1; the right end face of the right inclined middle plate (1323) is welded to the front end face of the right longitudinal middle plate (1325), and the inner surface of the connection is chamfered, and the chamfer radius is equal to r1; the outer shell middle plate (133) is a rectangular parallelepiped plate with a width of a3, a length of b3, and a height of h2; the left end face of the outer shell middle plate (133) is welded to the right end face of the left longitudinal middle plate (1324), and the connection away from O' is chamfered, and the chamfer radius is equal to r1; the waveguide port (134) is symmetrical about the OO' axis, and the waveguide port (134) is symmetrical about the OO' axis. The end face is welded on the front end face of the transverse middle plate (1321), and the outer surface of the welding position is rounded, and the chamfer radius is r2; the waveguide port (134) is a rectangular plate, with a width of a4, a length of b4, and a height equal to h3; the waveguide port (134) and the transverse middle plate (1321) are provided with a through hole (1341) along the OO' direction, and the through hole (1341) is used as an input port for power distribution, the through hole (1341) has a width of d, a depth of b3, and a height of h4, the distance between the lower surface of the through hole (1341) and the lower surface of the waveguide port (134) is equal to h1, and the distance between the upper surface of the through hole (1341) and the upper surface of the waveguide port (134) is equal to h2; Assume that QQ' is parallel to PP', and the horizontal distance from QQ' to the rear surface of the shell middle plate (133) is s5; the shell bottom plate (131) is vertically opened from the upper surface to the bottom to form a first groove (1311), with a depth of h5; the first groove (1311) is a rectangular cavity with a width of a5 and a length of s3; the left and right ends of the lower surface of the first groove (1311) are rounded, and the chamfer radius is r11; the distance from the rear end face of the first groove (1311) to the rear end face of the shell bottom plate (131) is equal to s1, the first groove (1311) is symmetrical about the OO' axis, the distance from the left end face of the first groove (1311) to the left surface of the left longitudinal middle plate (1324) is s2, and the distance from the right end face of the first groove (1311) to the right longitudinal middle plate is s3. (1325) the distance from the right surface is equal to s2; the shell middle plate (133) opens a second groove (1331) vertically upward from the lower surface, with a depth of h6; the second groove (1331) is a rectangular cavity, with a width equal to a5 and a length equal to s3; the two ends of the upper surface of the second groove (1331) are rounded, and the chamfer radius is equal to r2; the distance from the rear surface of the second groove (1331) to the rear surface of the shell middle plate (133) is equal to s1, the second groove (1331) is symmetrical about the OO' axis, the distance from the left end face of the second groove (1331) to the left surface of the left longitudinal middle plate (1324) is equal to s2, and the distance from the right end face of the second groove (1331) to the right surface of the right longitudinal middle plate (1325) is equal to s2; the power divider The filling body (11) is a rectangular plate made of metal material. The width of the power division filling body (11) is a3, the length is b1, and the height is h4. The power division filling body (11) is an axisymmetric structure. The two ends of the front surface of the power division filling body (11) are chamfered, the chamfer angle is equal to θ1, and the chamfer radius is equal to c1. The lower surface of the power division filling body (11) is welded to the upper surface of the shell bottom plate (131), the front surface of the power division filling body (11) is welded to the rear surface of the horizontal middle plate (1321), the left end chamfered surface of the front surface of the power division filling body (11) is welded to the right surface of the left inclined middle plate (1322), the right end chamfered surface of the front surface of the power division filling body (11) is welded to the left surface of the right inclined middle plate (1323), and the power division filling body (11) is welded to the left surface of the right inclined middle plate (1323). The left end face of the power-dividing filling body (11) is welded to the right surface of the left longitudinal middle plate (1324), and the right end face of the power-dividing filling body (11) is welded to the left surface of the right longitudinal middle plate (1325); the rear end face of the shell middle plate (133) is flush with the rear end face of the power-dividing filling body (11), and the lower surface of the shell middle plate (133) is welded to the upper surface of the power-dividing filling body (11); the front end face of the welding cover (2) is flush with the front end face of the power-dividing filling body (11), and the lower surface of the welding cover (2) is welded to the upper surface of the power-dividing filling body (11); except that the height may be unequal, the lower surface of the power-dividing filling body (11) and the upper surface of the shell bottom plate (131) are completely the same in shape, and the lower surface of the power-dividing filling body (11) is welded to the upper surface of the shell bottom plate (131);Therefore, the lower surface of the power division filling body (11) is wrapped by the shell bottom plate (131), the periphery of the power division filling body (11) is wrapped by the transverse middle plate (1321), the left inclined middle plate (1322), the right inclined middle plate (1323), the left longitudinal middle plate (1324), and the right longitudinal middle plate (1325), and the upper surface of the power division filling body (11) is wrapped by the shell middle plate (133) and the welding cover (2); A first-level power division channel (121), a second-level power division channel (122), a third-level power division channel (123), and a fourth-level power division channel (124) are excavated in the power division filling body (11); the first-level power division channel (121) is an axisymmetric structure, and the first-level power division channel (121) is composed of N1 first-level T-shaped power division cavities (1211) and N1 first-level trapezoidal bodies (1212); the first-level trapezoidal bodies (1212) are made of metal materials, and each first-level T-shaped power division cavity (1211) has a first-level trapezoidal body (1212); the first-level trapezoidal body (1212) is located in the power division channel (12) excavated by the power division filling body (11), and the lower surface of the first-level trapezoidal body (1212) is welded to the bottom of the shell. The upper surface of the plate (131) is welded on the hollow portion of the lower bottom surface of the power dividing filling body (11); the upper surface of the first-stage trapezoidal body (1212) is welded on the lower surface of the welding cover (2); the long side surface, i.e., the rear end surface, of the first-stage trapezoidal body (1212) is welded on the rear end surface of the transverse part of the first-stage T-shaped power dividing cavity (1211); the first-stage T-shaped power dividing cavity (1211) is composed of a transverse part rectangular body cavity parallel to the OO' axis and a longitudinal part rectangular body cavity parallel to the PP' axis, which are perpendicularly intersected, i.e., T-shaped; the transverse part of the first-stage T-shaped power dividing cavity (1211) has a width of a1, a length of d, and a depth of h4; the longitudinal part of the first-stage T-shaped power dividing cavity (1211) has a width of d, a length of b5, and a depth of h6. The left and right ends of the front surface of the horizontal part of the first-stage T-shaped power splitting cavity (1211) are chamfered, the chamfer angle is equal to θ1, and the chamfer size is c2; the connection between the chamfer of the first-stage T-shaped power splitting cavity (1211) and the left end surface of the horizontal part of the first-stage T-shaped power splitting cavity (1211) is rounded, and the chamfer radius is r4; the connection between the chamfer of the first-stage T-shaped power splitting cavity (1211) and the right end surface of the horizontal part of the first-stage T-shaped power splitting cavity (1211) is rounded, and the chamfer radius is r4; the connection between the chamfer of the first-stage T-shaped power splitting cavity (1211) and the two ends of the front surface of the horizontal part of the first-stage T-shaped power splitting cavity (1211) is rounded, and the chamfer radius is r4; the left end surface of the longitudinal part of the first-stage T-shaped power splitting cavity (1211) to The horizontal distance from the left end face of the transverse part of the first-stage T-shaped power splitting cavity (1211) is a10, and the horizontal distance from the right end face of the longitudinal part of the first-stage T-shaped power splitting cavity (1211) to the right end face of the transverse part of the first-stage T-shaped power splitting cavity (1211) is equal to a10; the front end face of the transverse part of the first-stage T-shaped power splitting cavity (1211) and the rear end face of the longitudinal part of the first-stage T-shaped power splitting cavity (1211) are rounded at both ends of the connection, and the chamfer radius is r3; the horizontal distance from the left end face of the transverse part of the first-stage T-shaped power splitting cavity (1211) to the right surface of the left inclined middle plate (1322) is a6, and the horizontal distance from the right end face of the transverse part of the first-stage T-shaped power splitting cavity (1211) to the left surface of the right inclined middle plate (1323) is equal to a6;Each primary T-shaped power splitting cavity (1211) has a primary trapezoidal body (1212), the primary trapezoidal body (1212) is an isosceles trapezoidal body, the long side face of the primary trapezoidal body (1212), i.e., the rear end face, is chamfered at both ends of the connection with the transverse part of the primary T-shaped power splitting cavity (1211), and the chamfer radius is equal to r4; the long side length of the trapezoidal face of the primary trapezoidal body (1212) is a7, the short side length of the trapezoidal face is a8, the height of the trapezoidal face is b6, and the height of the primary trapezoidal body (1212) is equal to h4 , the angle of the acute internal angle is θ2; the left inclined surface of the first-stage trapezoidal body (1212) is rounded at the connection with the front end surface, and the chamfer radius is r5; the right inclined surface of the first-stage trapezoidal body (1212) is rounded at the connection with the front end surface, and the chamfer radius is equal to r5; the distance from the left end of the rear end surface of the first-stage trapezoidal body (1212) to the left end of the horizontal part of the first-stage T-shaped power splitting cavity (1211) is a9, and the distance from the right end of the rear end surface of the first-stage trapezoidal body (1212) to the right end of the horizontal part of the first-stage T-shaped power splitting cavity (1211) is equal to a9; The secondary power division channel (122) is an axisymmetric structure. The secondary power division channel (122) is composed of N2 secondary T-shaped power division cavities (1221) and N2 secondary trapezoidal bodies (1222). The secondary trapezoidal bodies (1222) are made of metal materials. Each secondary T-shaped power division cavity (1221) has a secondary trapezoidal body (1222). The secondary trapezoidal body (1222) is located in the power division channel (12) excavated by the power division filling body (11). The lower surface of the secondary trapezoidal body (1222) is welded to the upper surface of the shell bottom plate (131). The welding surface is the hollow part of the lower bottom surface of the power division filling body (11). The upper surface of the secondary trapezoidal body (1222) is welded to the lower surface of the welding cover (2), and the long side surface, i.e., the rear end surface, of the secondary trapezoidal body (1222) is welded to the rear end surface of the transverse part of the secondary T-shaped power division cavity (1221); the secondary T-shaped power division cavity (1221) is composed of a transverse rectangular body cavity parallel to the OO' axis and a longitudinal rectangular body cavity parallel to the PP' axis, which are perpendicularly intersected, i.e., T-shaped, the transverse part of the secondary T-shaped power division cavity (1221) has a width of a11, a length of d, and a depth of h4, and the longitudinal part of the secondary T-shaped power division cavity (1221) has a width of d, a length of b7, and a depth of h4; The transverse part of the secondary T-shaped power splitting cavity (1221) is chamfered at both left and right ends of the front end surface, the chamfer angle is equal to θ1, and the chamfer size is equal to c2; The connection between the left chamfer of the secondary T-shaped power splitting cavity (1221) and the left end face of the transverse part of the secondary T-shaped power splitting cavity (1221) is rounded, and the chamfer radius is equal to r4; the connection between the right chamfer of the secondary T-shaped power splitting cavity (1221) and the right end face of the transverse part of the secondary T-shaped power splitting cavity (1221) is rounded, and the chamfer radius is equal to r4; the connection between the chamfer of the secondary T-shaped power splitting cavity (1221) and the two ends of the front surface of the transverse part of the secondary T-shaped power splitting cavity (1221) is rounded, and the chamfer radius is equal to r4; the horizontal distance from the left end face of the longitudinal part of the secondary T-shaped power splitting cavity (1221) closest to the left inclined middle plate (1322) to the left end face of the transverse part of the secondary T-shaped power splitting cavity (1221) is a12, and the right end face of the longitudinal part of the secondary T-shaped power splitting cavity (1221) is a2. The horizontal distance from the left end face of the transverse part of the secondary T-shaped power splitting cavity (1221) to the right end face of the transverse part of the secondary T-shaped power splitting cavity (1221) is equal to a13; the front end face of the longitudinal part of the secondary T-shaped power splitting cavity (1221) is rounded at the end closer to the left and right end faces of the transverse part of the secondary T-shaped power splitting cavity (1221), and the chamfer radius is equal to r3; the front end face of the transverse part of the secondary T-shaped power splitting cavity (1221) and the rear end face of the longitudinal part of the secondary T-shaped power splitting cavity (1221) are rounded at both ends of the connection, and the chamfer radius is equal to r1; the horizontal distance from the left end face of the transverse part of the secondary T-shaped power splitting cavity (1221) closest to the left inclined middle plate (1322) to the right surface of the left inclined middle plate (1322) is a14, and the horizontal distance from the transverse part of the secondary T-shaped power splitting cavity (1221) closest to the right inclined middle plate (1323) is a15. The horizontal distance from the right end face of the part to the left surface of the right inclined middle plate (1323) is equal to a14; the two adjacent secondary T-shaped power splitting chambers (1221) meet the axial symmetry arrangement, and the horizontal distance between the right end face of the transverse part of the secondary T-shaped power splitting chamber (1221) and the left end face of the transverse part of the adjacent secondary T-shaped power splitting chamber (1221) on the right is a15; each secondary T-shaped power splitting chamber (1221) has a secondary trapezoidal body (1222), and the long side surface of the secondary trapezoidal body (1222), that is, the rear end face, is closely welded to the rear end face of the transverse part of the secondary T-shaped power splitting chamber (1221), and the two ends of the connection are chamfered, and the chamfer radius is equal to r4; the secondary trapezoidal body (1222) is an isosceles trapezoidal body, and the long side length of the isosceles trapezoidal surface of the secondary trapezoidal body (1222) is a16, the length of the short side of the isosceles trapezoidal surface is a17, the height of the isosceles trapezoidal surface is b8, the height of the secondary trapezoidal body (1222) is equal to h4, and the angle of the acute internal angle is θ3; the connection between the left inclined surface and the front end surface of the secondary trapezoidal body (1222) is rounded, and the chamfer radius is r6; the connection between the right inclined surface and the front end surface of the secondary trapezoidal body (1222) is rounded, and the chamfer radius is r6; the distance from the left end of the rear end surface of the secondary trapezoidal body (1222) closest to the left inclined middle plate (1322) to the left end surface of the horizontal part of the secondary T-shaped power splitting cavity (1221) is a18, and the distance from the right end of the rear end surface of the secondary trapezoidal body (1222) closest to the left inclined middle plate (1322) to the right end surface of the horizontal part of the secondary T-shaped power splitting cavity (1221) is a19;The two adjacent secondary trapezoidal bodies (1222) are arranged in an axisymmetric manner, and the horizontal distance between the right end of the rear end surface of the secondary trapezoidal body (1222) and the left end of the rear end surface of the adjacent secondary trapezoidal body (1222) on the right is a20; The three-level power division channel (123) is an axisymmetric structure. The three-level power division channel (123) is composed of N3 three-level T-shaped power division cavities (1231) and N3 three-level trapezoidal bodies (1232). The three-level trapezoidal bodies (1232) are made of metal materials. Each three-level T-shaped power division cavity (1231) has a three-level trapezoidal body (1232). The three-level trapezoidal body (1232) is located in the power division channel (12) excavated by the power division filling body (11). The lower surface of the three-level trapezoidal body (1232) is welded to the upper surface of the shell bottom plate (131). The welding surface is the hollow part of the lower bottom surface of the power division filling body (11). The upper surface of the three-stage trapezoidal body (1232) is welded on the lower surface of the welding cover (2); the long side surface, i.e., the rear end surface, of the three-stage trapezoidal body (1232) is welded on the rear end surface of the transverse part of the three-stage T-shaped power division cavity (1231); the three-stage T-shaped power division cavity (1231) is composed of a transverse rectangular body cavity parallel to the OO' axis and a longitudinal rectangular body cavity parallel to the PP' axis, which are perpendicularly intersected, i.e., T-shaped; the transverse part of the three-stage T-shaped power division cavity (1231) has a width of a21, a length of d, and a depth of h4; the longitudinal part of the three-stage T-shaped power division cavity (1231) has a width of d, a length of b7, and a depth of h4; The front end surface of the transverse part of the three-stage T-shaped power splitting cavity (1231) is chamfered at both ends, the chamfer angle is equal to θ1, and the chamfer size is equal to c3; the left chamfer of the three-stage T-shaped power splitting cavity (1231) and the left end surface of the transverse part of the three-stage T-shaped power splitting cavity (1231) are chamfered at the connection, and the chamfer radius is r4; the right chamfer of the three-stage T-shaped power splitting cavity (1231) and the right end surface of the transverse part of the three-stage T-shaped power splitting cavity (1231) are chamfered at the connection, and the chamfer radius is r4; the chamfer of the three-stage T-shaped power splitting cavity (1231) and the two ends of the front surface of the transverse part of the three-stage T-shaped power splitting cavity (1231) are chamfered at the connection, and the chamfer radius is r4. The corner radius is equal to r4; the horizontal distance from the left end face of the longitudinal part of the three-stage T-shaped power dividing cavity (1231) closest to the left inclined middle plate (1322) to the left end face of the transverse part of the three-stage T-shaped power dividing cavity (1231) is a22, and the horizontal distance from the right end face of the longitudinal part of the three-stage T-shaped power dividing cavity (1231) closest to the left inclined middle plate (1322) to the right end face of the transverse part of the three-stage T-shaped power dividing cavity (1231) is a23; the front end face of the longitudinal part of the three-stage T-shaped power dividing cavity (1231) is rounded at the end closer to the left and right end faces of the transverse part of the three-stage T-shaped power dividing cavity (1231), and the chamfer radius is equal to r3; The front end face of the transverse part of the three-stage T-shaped power splitting cavity (1231) and the rear end face of the longitudinal part of the three-stage T-shaped power splitting cavity (1231) are rounded at both ends of the connection, and the chamfer radius is r7; the horizontal distance from the left end face of the transverse part of the three-stage T-shaped power splitting cavity (1231) closest to the left inclined middle plate (1322) to the left end face of the left inclined middle plate (1322) is a24, and the horizontal distance from the right end face of the transverse part of the three-stage T-shaped power splitting cavity (1231) closest to the right inclined middle plate (1323) to the right end face of the right inclined middle plate (1323) is a24. at a24; two adjacent three-stage T-shaped power splitting chambers (1231) are arranged in an axially symmetrical manner, and the horizontal distance between the right end face of the transverse part of the three-stage T-shaped power splitting chamber (1231) and the left end face of the transverse part of the adjacent three-stage T-shaped power splitting chamber (1231) on the right is a25; each three-stage T-shaped power splitting chamber (1231) has a three-stage trapezoidal body (1232), and the long side surface of the three-stage trapezoidal body (1232), i.e., the rear end, is closely welded to the rear end face of the transverse part of the three-stage T-shaped power splitting chamber (1231), and the two ends of the connection are chamfered, and the chamfer radius is equal to r4 The three-level trapezoid body (1232) is an isosceles trapezoid body, the length of the long side of the isosceles trapezoid face of the three-level trapezoid body (1232) is a26, the length of the short side of the isosceles trapezoid face is a27, the height of the isosceles trapezoid face is b9, the height of the three-level trapezoid body (1232) is equal to h4, and the angle of the acute internal angle is θ4; the left inclined surface of the three-level trapezoid body (1232) is rounded at the connection with the front end surface, and the chamfer radius is r3, and the right inclined surface of the three-level trapezoid body (1232) is rounded at the connection with the front end surface, and the chamfer radius is r3; the distance from the left inclined middle plate (1322) is The distance from the left end of the rear end face of the nearest three-level trapezoidal body (1232) to the left end face of the transverse part of the three-level T-shaped power splitting cavity (1231) is a28, and the distance from the right end of the rear end face of the three-level trapezoidal body (1232) closest to the left inclined middle plate (1322) to the right end face of the transverse part of the three-level T-shaped power splitting cavity (1231) is equal to a29; the two adjacent three-level trapezoidal bodies (1232) satisfy the axial symmetric arrangement, and the horizontal distance between the right end of the rear end face of the three-level trapezoidal body (1232) and the left end of the rear end face of the adjacent three-level trapezoidal body (1232) on the right is a30; The four-level power division channel (124) is an axisymmetric structure. The four-level power division channel (124) is composed of N4 four-level T-shaped power division cavities (1241) and N4 four-level capsule columns (1242). The four-level capsule columns (1242) are made of metal materials. Each four-level T-shaped power division cavity (1241) has a four-level capsule column (1242). The four-level capsule column (1242) is located in the power division channel (12) dug by the power division filling body (11). The lower surface of the four-level capsule column (1242) is welded to the bottom plate of the shell. (131) upper surface, the welding surface is the hollow part of the lower bottom surface of the power dividing filling body (11), and a part of the upper surface of the four-stage capsule column (1242) is welded to the lower surface of the shell middle plate (133); the four-stage T-shaped power dividing cavity (1241) is composed of a transverse part rectangular cavity parallel to the OO' axis and a longitudinal part rectangular cavity parallel to the PP' axis, which are perpendicularly intersected, i.e., T-shaped; the transverse part width of the four-stage T-shaped power dividing cavity (1241) is a31, the length is b10, the depth is equal to h4, and the four-stage T-shaped power dividing cavity (1241) ) has a longitudinal portion with a width of d, a length of b11, and a depth of h4; a front end face of the transverse portion of the four-stage T-shaped power splitting cavity (1241) is chamfered at both ends, the chamfer angle is θ1, and the chamfer radius is c4; a plane parallel to the left end face of the transverse portion of the four-stage T-shaped power splitting cavity (1241) and having a distance of r9 from the left end face of the transverse portion of the four-stage T-shaped power splitting cavity (1241) is rounded at the intersection with the left chamfer of the four-stage T-shaped power splitting cavity (1241), and the chamfer radius is r7; a plane parallel to the four-stage T-shaped power splitting cavity (1 241) the left end face of the transverse part, and the plane with a spacing of r9 from the left end face of the transverse part of the four-stage T-shaped power splitting cavity (1241), is rounded at the intersection with the left end face of the four-stage T-shaped power splitting cavity (1241), and the chamfer radius is r9; parallel to the right end face of the transverse part of the four-stage T-shaped power splitting cavity (1241), and the plane with a spacing of r9 from the right end face of the transverse part of the four-stage T-shaped power splitting cavity (1241), is rounded at the intersection with the right chamfer of the four-stage T-shaped power splitting cavity (1241), and the chamfer radius is r7; A plane parallel to the right end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) and having a spacing equal to r9 from the right end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) is chamfered at the intersection with the right end face of the four-stage T-shaped power splitting cavity (1241), and the chamfer radius is equal to r9; a horizontal distance from the left end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) to the left end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) is equal to c4, and a horizontal distance from the right end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) to the right end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) is equal to c4; the front end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) and the rear end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) are chamfered at both ends of the connection, and the chamfer radius is equal to r9. The radius is r8; the horizontal distance from the left end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) closest to the left longitudinal middle plate (1324) to the right end face of the left longitudinal middle plate (1324) is s4, and the horizontal distance from the right end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) closest to the right longitudinal middle plate (1325) to the left end face of the right longitudinal middle plate (1325) is equal to s4; the four-stage T-shaped power splitting cavity (1241) closest to the left longitudinal middle plate (1324) is rounded at the intersection of the rounded corner 1411 with the left longitudinal middle plate (1324), and the chamfer radius is equal to r4; the four-stage T-shaped power splitting cavity (1241) closest to the right longitudinal middle plate (1325) is rounded at the intersection of the rounded corner 1412 with the right longitudinal middle plate (1325) , the chamfer radius is r4; the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) closest to the left longitudinal middle plate (1324) is rounded at the right end, and the chamfer radius is r10; the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) closest to the right longitudinal middle plate (1325) is rounded at the left end, and the chamfer radius is r10; the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) second closest to the left longitudinal middle plate (1324) is rounded at the left end, and the chamfer radius is r10; the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) second closest to the right longitudinal middle plate (1325) is rounded at the right end, and the chamfer radius is r10; the lateral parts of two adjacent four-stage T-shaped power splitting cavities (1241) are connected to each other, except for the distance Except for the two four-level T-shaped power division chambers (1241) closest to the left longitudinal middle plate (1324) and the two four-level T-shaped power division chambers (1241) closest to the right longitudinal middle plate (1325), the other two adjacent four-level T-shaped power division chambers (1241) meet the axial symmetric arrangement; each four-level T-shaped power division chamber (1241) has a four-level capsule column (1242), the distance from the left end face of the four-level capsule column (1242) to the left end face of the four-level T-shaped power division chamber (1241) is a32, and the distance from the right end face of the four-level capsule column (1242) to the right end face of the four-level T-shaped power division chamber (1241) is equal to a32; the width of the four-level capsule column (1242) is a33, the length is b12, the height is equal to h4, and the two ends of the four-level capsule column (1242) are rounded, and the chamfer radius is equal to r9;The distance from the front top of the four-stage capsule column (1242) to the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) is b13; the horizontal distances between adjacent four-stage capsule columns (1242) are equal, and the horizontal distance between the right end face of the four-stage capsule column (1242) and the left end face of the adjacent four-stage capsule column (1242) on the right is a34; the transverse part of each four-stage T-shaped power splitting cavity (1241) is separated by the four-stage capsule column (1242) located therein, forming two mutually connected channels, i.e., two ports, which serve as output ports during power distribution; N4 four-stage T-shaped power splitting cavities (1241) have a total of N output ports; The welding cover (2) is made of metal material and seals the power divider body (1) to ensure that the input microwave propagates in the power divider body (1). The width of the welding cover (2) is equal to a3, the length is b14, and the height is h7. The lower surface of the welding cover (2) is welded to the upper surface of the power divider filling body (11). The welding cover (2) is an axisymmetric structure, the left and right ends of the front surface of the welding cover are chamfered, and the left and right ends of the rear surface of the welding cover (2) are rounded. The sealing plate (3) is a rectangular parallelepiped made of 30% glass fiber PEEK material, with a width equal to a3, a length equal to b14, and a height equal to h6; the sealing plate (3) has the same shape as the welding cover (2), and the lower surface of the sealing plate (3) is fixed to the upper surface of the welding cover (2) by screws; The dielectric window (4) is a rectangular cavity made of 30% glass fiber PEEK material, with a width of a0, a length of b15, and a height equal to h3. The front surface of the dielectric window (4) is fixed to the rear surface of the shell bottom plate (131), the rear surface of the left longitudinal middle plate (1324), the rear surface of the right longitudinal middle plate (1325), and the rear surface of the shell middle plate (133) of the power divider body (1) by screws; the front surface of the dielectric window (4) is provided with a first rectangular groove (411) at a distance h8 from the upper surface of the dielectric window (4) and in the direction of the rear surface of the dielectric window (4). ), with a depth of s5; the first rectangular groove (411) has a width equal to a5 and a height equal to h9; the rear surface of the dielectric window (4) is provided with a second rectangular groove (412) at a distance h8 from the upper surface of the dielectric window (4) and in a direction toward the front surface of the dielectric window (4), with a depth equal to s5; the second rectangular groove (412) has a width equal to a5 and a height equal to h9; the front surface of the dielectric window (4) is provided with a third rectangular groove (413) at a distance h10 from the lower surface of the dielectric window (4) and in a direction toward the rear surface of the dielectric window (4), with a depth equal to s5; the third rectangular groove (414) is provided with a depth equal to s5 The groove (413) has a width equal to a5 and a height equal to h9; a fourth rectangular groove (414) is formed on the rear surface of the dielectric window (4) at a distance h10 from the lower surface of the dielectric window (4) and in a direction toward the front surface of the dielectric window (4), and the depth is s5; the fourth rectangular groove (414) has a width equal to a5 and a height equal to h9; a first rectangular plate (421) is filled in the first rectangular groove (411), and the first rectangular plate (421) is a metal cuboid with a width equal to a5, a length equal to s5, and a height equal to h9; and a fourth rectangular groove (414) is formed on the rear surface of the dielectric window (4) at a distance h10 from the lower surface of the dielectric window (4) and in a direction toward the front surface of the dielectric window (4). ) is filled with a second rectangular plate (422), the second rectangular plate (422) is a metal cuboid, the width is equal to a5, the length is equal to s5, and the height is equal to h9; the third rectangular plate (423) is filled in the third rectangular groove (413), the third rectangular plate (423) is a metal cuboid, the width is equal to a5, the length is equal to s5, and the height is equal to h9; the fourth rectangular plate (424) is filled in the fourth rectangular groove (414), the fourth rectangular plate (424) is a metal cuboid, the width is equal to a5, the length is equal to s5, and the height is equal to h9; The RR' plane coincides with the front surface of the first rectangular groove (411); the front surface of the dielectric window (4) is provided with a left rectangular through groove (431) at a distance s6 from the left end surface of the dielectric window (4) toward the rear surface of the dielectric window (4); the depth is equal to b15; the left rectangular through groove (431) is a rectangular parallelepiped with a width equal to s3 and a height equal to h11; the left rectangular through groove (431) is chamfered at both ends, with a chamfer radius of r12; a fifth rectangular plate (425) is filled from the front surface of the left rectangular through groove (431) toward the rear surface; the fifth rectangular plate (425) is a metal rectangular parallelepiped with a width equal to s3, a length equal to b16 and a height equal to h11; the fifth rectangular plate (425) is chamfered at both ends, from the left rectangular through groove (431) to the rear surface. A sixth rectangular plate (426) is filled from the rear surface of the through slot (431) toward the front surface, the sixth rectangular plate (426) being a metal cuboid with a width equal to s3, a length equal to b16, and a height equal to h11; the sixth rectangular plate (426) is chamfered at both ends; a right rectangular through slot (432) is opened on the front surface of the dielectric window (4) at a position s6 away from the right end surface of the dielectric window (4) toward the rear surface of the dielectric window (4), the depth of which is equal to b15, the width of the right rectangular through slot (432) being equal to s3, and the height being equal to h11; the right rectangular through slot (432) is chamfered at both ends, the chamfer radius being r12; a seventh rectangular plate (427) is filled from the front surface of the right rectangular through slot (432) toward the rear surface, the seventh rectangular plate (427) being The rectangular plate (427) is a metal cuboid, with a width equal to s3, a length equal to b16, and a height equal to h11; the seventh rectangular plate (427) is rounded at both ends; the eighth rectangular plate (428) is filled from the rear surface of the right rectangular through groove (432) to the front surface, and the eighth rectangular plate (428) is a metal cuboid, with a width equal to s3, a length equal to b16, and a height equal to h11; the eighth rectangular plate (428) is rounded at both ends; the front end surface of the dielectric window (4) is between the left rectangular through groove (431) and the right rectangular through groove (432), and N5 triangular prism grooves (44) are sequentially opened from left to right; the upper end surface of the triangular prism groove (44) coincides with the lower surface of the first rectangular groove (411), and the triangular prism groove (44) is provided with a plurality of triangular prism grooves (44) on the front end surface. The lower end surface of the groove (44) coincides with the upper surface of the third rectangular groove (413); the upper end surface of the triangular prism groove (44) is an equilateral triangle with a side length of s7; the height of the triangular prism groove (44) is equal to h4; the function of the triangular prism groove (44) is to increase the power capacity; the microwave first directly passes through the rectangle formed by the first rectangular plate (421), the third rectangular plate (423), the fifth rectangular plate (425), and the seventh rectangular plate (427) in the dielectric window (4), and then propagates through the rectangle formed by the second rectangular plate (422), the fourth rectangular plate (424), the sixth rectangular plate (426), and the eighth rectangular plate (428) in the dielectric window (4); the rear surface of the dielectric window (4) is connected to the front surface of the separation waveguide (5); The separation waveguide (5), the flange (6) and the bending waveguide (7) are all made of metal materials; The partition waveguide (5) is composed of a connecting plate (51) and a partition plate (52); TT' is parallel to OO', located on the upper surface of the partition plate (52), and the distance from the right end surface of the partition plate (52) is s8; the connecting plate (51) is a rectangular parallelepiped plate, with a width equal to a0, a length equal to b17, and a height equal to h3; the partition plate (52) is composed of a partition upper plate (521) and a partition main body plate (522); Assume that SS' is parallel to PP', located on the front surface of the connecting plate (51), and the distance to the upper surface of the connecting plate (51) is equal to h1; the partition plate (52) is a rectangular parallelepiped plate, with a width of a35, a length of b18, and a height of h12, where h12<h3; the lower end of the rear surface of the partition plate (52) is chamfered, the chamfer angle is equal to θ1, and the chamfer dimension is c5; the upper surfaces of the connecting plate (51) and the partition plate (52) are on the same horizontal plane, the rear surface of the connecting plate (51) and the front surface of the partition plate (52) are welded together, the distance from the left end surface of the partition plate (52) to the left end surface of the connecting plate (51) is s9, the distance from the right end surface of the partition plate (52) to the right end surface of the connecting plate (51) is equal to s9, and a35=a0-2*s9; The partition plate (52) is composed of a partition upper plate (521) and a partition main body plate (522), wherein the lower surface of the partition upper plate (521) is welded to the upper surface of the partition main body plate (522); the partition upper plate (521) is a rectangular parallelepiped plate, with a width equal to a35, a length equal to b18, and a height equal to h1; a series of through holes (5211) are opened from the upper surface to the lower surface of the partition upper plate (521), and the through holes (5211) have a depth equal to h1, a width of a36, and a length of b23; the through holes (5211) are ) are arranged alternately from the left end to the right end of the partition upper plate (521); the distances from the through hole (5211) closest to the right end face of the partition upper plate (521) to the right end face and the rear end face of the partition upper plate (521) are equal, both equal to s5; the distance from the through hole (5211) closest to the left end face of the partition upper plate (521) to the left end face of the partition upper plate (521) is equal to s5, and the distance to the rear end face of the partition upper plate (521) is b21; the distance between the left and right end faces of two adjacent through holes (5211) is s11; A first rectangular through groove (511) is opened from the front surface to the rear surface of the connecting plate (51), with a depth equal to b17, a width equal to a5, and a height equal to h4; the distance between the upper surface of the first rectangular through groove (511) and the upper surface of the connecting plate (51) is equal to h1; the distance between the lower surface of the first rectangular through groove (511) and the lower surface of the connecting plate (51) is equal to h2; the distance between the left end surface of the first rectangular through groove (511) and the left end surface of the connecting plate (51) is equal to s2; and the distance between the right end surface of the first rectangular through groove (511) and the right end surface of the connecting plate (51) is equal to s2; The separating main board (522) is a cuboid board with a width equal to a35, a length equal to b18, and a height of h13. The lower end of the rear surface is chamfered at an angle equal to θ1, and the chamfer size is equal to c5. There are two kinds of grooves in the separating main board (522), namely the large groove (5221) and the small groove (5222), both of which are grooves opened from the upper surface of the separating main board (522) to the lower surface, and the depth is equal to h4. The distance from the right end surface of the large groove (5221) closest to the right end surface of the separating main board (522) to the right end surface of the separating main board (522) is equal to s5. The distance from the left end surface of the large groove (5221) closest to the left end surface of the separating main board (522) to the left end surface of the separating main board (522) is equal to s10. The distance from the right end surface of the small groove (5222) closest to the right end surface of the separating main board (522) to the right end surface of the separating main board (522) is equal to s10. The distance from the left end surface of the small groove (5222) closest to the left end surface of the separating main board (522) to the left end surface of the separating main board (522) is equal to s5. The large groove (5221) and the small groove (5222) are arranged alternately, and the distance between the left end surface of the adjacent large groove (5221) and the right end surface of the small groove (5222) is equal to s11. The distance from the rear surface of the large groove (5221) to the rear end surface of the separating main board (522) is equal to s5. The two ends of the front surface of the large groove (5221) are rounded, and the chamfer radius is equal to r7. The two ends of the front surface of the small groove (5222) are rounded, and the chamfer radius is equal to r7. The depth of the large groove (5221) is equal to h4, the width is a36, and the length is b19. The rear surface of the large groove (5221) is chamfered at an angle equal to θ1, and the chamfer size is c6. Let UU' be parallel to TT', located on the upper surface of the separating board (52), and the distance from the right end surface of the separating board (52) is s12. The depth of the small groove (5222) is equal to h4, the width is equal to a36, and the length is b20, where b20 < b19. The rear surface of the small groove (5222) is chamfered at an angle equal to θ1, and the chamfer size is equal to c6. The distance from the rear surface of the small groove (5222) to the rear surface of the separating main board (522) is b21. The flange (6) is composed of a flange bottom plate (61), a flange middle plate (62), and a flange upper plate (63). The upper surface of the flange bottom plate (61) and the lower surface of the flange middle plate (62) are welded together, and the upper surface of the flange middle plate (62) and the lower surface of the flange upper plate (63) are welded together. The center points of the flange bottom plate (61), the flange middle plate (62), and the flange upper plate (63) coincide. The flange bottom plate (61) is a cuboid board with a width of a37, a length of b22, and a height of h14. A second rectangular through groove (611) is opened from the lower surface of the flange bottom plate (61) to the upper surface of the flange bottom plate (61), with a depth equal to h14, a width equal to a36, and a length equal to b23. The center point of the second rectangular through groove (611) coincides with the center point of the flange bottom plate (61). The flange middle plate (62) is a rectangular parallelepiped plate with a width of a39, a length of b25, and a height of h8; the lower surface of the flange middle plate (62) is flatly welded to the upper surface of the flange bottom plate (61); a third rectangular through groove (621) is opened from the lower surface of the flange middle plate (62) to the upper surface, with a depth of h8, a width of a38, and a length of b24; the center point of the third rectangular through groove (621) coincides with the center point of the flange middle plate (62); The flange upper plate (63) is a rectangular parallelepiped plate with a width of a40, a length of b25, and a height of h15; a fourth rectangular through groove (631) is opened from the lower surface of the flange upper plate (63) to the upper surface, with a depth of h15, a width of d, and a length of s10; the center point of the fourth rectangular through groove (631) coincides with the center point of the flange upper plate (63); the lower surfaces of the flange bottom plates (61) of the N flanges (6) are welded to the upper surface of the partition plate (52), and the second rectangular through grooves (611) of the N flanges (6) are respectively connected to the through holes (5211); the lengths of the second rectangular through grooves (611) are equal to The length of the through hole (5211) is equal to the length of the through hole (5211) (i.e., b23); the width of the second rectangular through groove (611) is equal to the width of the through hole (5211), equal to the width of the large groove (5221), and also equal to the width a36 of the small groove (5222); the length of the fourth rectangular through groove (631) is equal to the length of the vertical waveguide (71) of the curved waveguide (7); the width of the fourth rectangular through groove (631) is equal to the width of the vertical waveguide (71); the vertical waveguide (71) is inserted into the fourth rectangular through groove (631) and fixed, and the insertion depth is equal to the depth h15 of the fourth rectangular through groove (631); The curved waveguide (7) is composed of a vertical waveguide (71) and a horizontal waveguide (72) which are perpendicular to each other; the vertical waveguide (71) is a rectangular parallelepiped plate with a width equal to d, a length equal to s10, and a height equal to h18; the horizontal waveguide (72) is a rectangular parallelepiped plate with a width equal to d, a length equal to b25, and a height equal to s10; the rear end of the upper surface of the horizontal waveguide (72) is chamfered, the chamfer angle is equal to θ1, and the chamfer size is c7; the vertical waveguide (71) is provided with a fifth rectangular through groove (711) from the lower surface to the upper surface, the depth is h16, the width is equal to a38, and the length is equal to b26; the fifth rectangular through groove (711) The distances from the front, rear, left, and right end faces to the front, rear, left, and right end faces of the vertical waveguide (71) are equal and equal to s17; a sixth rectangular through slot (721) is opened from the front surface to the rear surface of the horizontal waveguide (72), with a depth of b27, a width of a38, and a height of b26; the rear end of the upper surface of the sixth rectangular through slot (721) is rounded, and the chamfer radius is r14; the distances from the upper, lower, left, and right end faces of the sixth rectangular through slot (721) to the upper, lower, left, and right end faces of the horizontal waveguide (72) are equal and equal to s17; the distance from the rear end face of the sixth rectangular through slot (721) to the rear surface of the horizontal waveguide (72) is equal to s17; The lower surface of the flange lower plate 61 of the flange (6) is welded to the upper surface of the partition plate (52) of the partition waveguide (5), each flange (6) corresponds to a through hole (5211), and the center point of the second rectangular through slot (611) coincides with the center point of the through hole (5211); the distance between adjacent flanges (6) is 0, and the left end face of the flange (6) is connected to the right end face of the adjacent left flange (6); the distance from the left end face of the flange bottom plate (61) of the flange (6) located at the leftmost end of the partition plate (52) to the left end face of the partition plate (52) is equal to s18, and the distance from the right end face of the flange bottom plate (61) of the flange (6) located at the rightmost end of the partition plate (52) to the right end face of the partition plate (52) is equal to s18; the vertical waveguides (71) of the N curved waveguides (7) are respectively inserted into the fourth rectangular through slots (631) of the N flange upper plates (63), and the insertion depth is equal to the height h15 of the flange upper plate (63); A rectangular waveguide slot antenna (101) with a dielectric cover is composed of a dielectric cover (8), a slotted waveguide (9), a support column (10), and a support rod (201); the dielectric cover (8) completely wraps the slotted waveguide (9); the support column (10) and the support rod (201) are located between the dielectric cover (8) and the slotted waveguide (9); the end of the invention close to a microwave source is defined as an input end, and the end away from the microwave source is defined as an output end; the open end of the dielectric cover (8) is connected to a curved waveguide (7) as a high-power waveguide slot array antenna with a dielectric cover. The dielectric cover (8) is an input port of the line, and the other end is a closed structure; the dielectric cover (8) is composed of a front cover (81), a main body cover (82), and a rear cover (83); the front cover (81) is located at the front end surface of the main body cover (82), and the rear cover (83) is located at the rear end surface of the main body cover (82); the front cover (81) and the rear cover (83) seal the main body cover (82); the front cover (81), the main body cover (82), and the rear cover (83) are all made of glass fiber reinforced plastic material; the dielectric cover (8) is a closed structure; the dielectric cover (8) is evacuated and filled with sulfur hexachloride gas; The slotted waveguide (9) is connected to the front cover (81) by rivets; The slotted waveguide (9) is composed of a rectangular bottom plate (91), two rectangular middle plates (92), and a rectangular upper plate (93), all of which are made of metal materials; the rectangular bottom plate (91), the two rectangular middle plates (92), and the rectangular upper plate (93) together form a rectangular channel (94); for the convenience of description, a central axis XX' of the rectangular channel (94) is drawn along the input to output direction, point X is on the input end surface, and point X' is on the rear cover (83); a longitudinal axis ZZ' is drawn through point X on the input end surface, ZZ' is perpendicular to the rectangular bottom plate (91), the end away from the rectangular bottom plate (91), i.e., the Z end, is the upper end, and the end close to the rectangular bottom plate (91), i.e., the Z' end, is the lower end; a transverse axis YY' is drawn through point X on the input end surface, the transverse axis YY' is perpendicular to the longitudinal axis ZZ', the Y end is the left end, and the Y' end is the right end; the width a41 of the slotted waveguide (9) should be smaller than the free space wavelength; The rectangular bottom plate (91) is a rectangular plate with a width equal to a41, a height equal to h19, and a length equal to b29; the lower surfaces of the two rectangular middle plates (92) are welded to the left and right ends of the upper surface of the rectangular bottom plate (91) along the direction of the central axis XX' and symmetrically about the central axis XX'; the rectangular middle plate (92) is a rectangular plate with a width of a42, a height equal to b26, and a length equal to b29; the lower surface of the rectangular upper plate (93) is welded to the upper surfaces of the two rectangular middle plates (92) along the direction of the central axis XX' The rectangular upper plate (93) is a rectangular parallelepiped plate, with a width equal to a41, a height equal to h9, and a length equal to b29; the rectangular bottom plate (91), two rectangular middle plates (92), and the rectangular upper plate (93) together form a rectangular channel (94); the surface of the rectangular bottom plate (91), the two rectangular middle plates (92), and the rectangular upper plate (93) close to the axis XX' is the inner surface; the width of the rectangular channel (94) is equal to a38, the height is equal to b26, the length is equal to b29, and a38 = a41-2*a42; The rectangular upper plate (93) is provided with waveguide slots (95) along the ZZ' direction; the waveguide slots (95) are rectangular, and there are K of them in total, with a length of b34, a width equal to a41, and an angle θ5 with the YY' axis. On the rectangular upper plate (93), the right end of the waveguide slot (95) closest to X is deflected away from the X direction by θ5, and the next waveguide slot (95) is deflected close to the X direction by θ5, and the waveguide slots (95) are arranged in a staggered manner on the rectangular upper plate (93); the waveguide slots (95) are arranged from the upper surface of the rectangular upper plate (93) to A groove is formed in a direction close to the rectangular bottom plate (91), the groove depth is c9, c9>h9, and the waveguide slot (95) is connected to the upper surface of the rectangular upper plate (93) and the rectangular channel (94); the axial spacing between adjacent waveguide slots (95) is b32, the axial spacing between the waveguide slot (95) closest to the front cover (81) and the slotted waveguide (9) close to the X end face is s23, and the axial spacing between the waveguide slot (95) closest to the rear cover (83) and the slotted waveguide (9) close to the X' end face is equal to s23; The support columns (10) are cylindrical columns made of glass fiber reinforced plastics, with a total of N6, a diameter of c8, and a height of h25; the N6 support columns (10) are distributed along the central axis XX' direction and are fixed to the upper surface of the rectangular upper plate (93) by screws; the axial spacing between adjacent support columns (10) is b33, and the axial spacing between the support column (10) closest to the rear cover (83) and the rear cover (83) is s24; The main body cover (82) is composed of three parts: a rectangular bottom cover plate (821), two rectangular middle cover plates (822), and a rectangular upper cover plate (823), all of which are made of glass fiber reinforced plastics; the rectangular bottom cover plate (821) is welded to the lower surface of the rectangular bottom plate (91) symmetrically about the XX' axis; the rectangular bottom cover plate (821) is a rectangular parallelepiped plate with a width of a43, a height of h20, and a length of b30; the two rectangular middle cover plates (822) are welded to the left and right ends of the upper surface of the rectangular bottom cover plate (821) symmetrically about the central axis XX'; the rectangular middle cover plate (822) is a rectangular parallelepiped plate with a width of a44, a height of h21, and a length equal to b30; the rectangular upper cover plate (823) is welded flat on the upper surfaces of the two rectangular middle cover plates (822), and the rectangular upper cover plate ( 823) is a rectangular parallelepiped plate, with a width equal to a43, a height equal to h9, and a length equal to b30; the surfaces of the rectangular bottom cover plate (821), the two rectangular middle cover plates (822), and the rectangular upper cover plate (823) close to the axis XX' are inner surfaces; the connection between the rectangular bottom cover plate (821) and the two rectangular middle cover plates (822) is rounded, the chamfer radius of the inner surface is equal to r12, and the chamfer radius of the outer surface is equal to r7; the connection between the rectangular upper cover plate (823) and the two rectangular middle cover plates (822) is rounded, the chamfer radius of the inner surface is equal to r2, and the chamfer radius of the outer surface is r15; the distance between the inner surface of the rectangular middle cover plate (822) and the outer surface of the adjacent rectangular middle plate (92) is a45, 2*a45+2*a44+a41=a43; The front cover (81) is a convex metal cuboid with a width equal to a43, a height equal to h22, and a thickness equal to s22. The front cover (81) has four rectangular grooves dug from the edge to the direction close to the central axis XX' in the four directions of top, bottom, left and right on the end face away from X. The rectangular groove close to Z' below is the third groove (811). The width of the third groove (811) is equal to the width a43 of the rectangular bottom cover plate (821). The height of the third groove (811) is equal to the height h20 of the rectangular bottom cover plate (821). The rectangular groove close to Y on the left is the fourth groove (812). The width of the fourth groove (812) is equal to the width a44 of the rectangular middle cover plate (822). The height of the fifth groove (813) is equal to the height h21 of the rectangular middle cover plate (822); the rectangular groove on the left side close to Y' is the fifth groove (813), the width of the fifth groove (813) is equal to the width a44 of the rectangular middle cover plate (822), and the height of the fifth groove (813) is equal to the height h21 of the rectangular middle cover plate (822); the rectangular groove on the upper side close to Z is the sixth groove (814), the width of the sixth groove (814) is equal to the width a43 of the rectangular upper cover plate (823), and the height of the sixth groove (814) is equal to the height h9 of the first rectangular groove (411); the third groove (811), the fourth groove (812), the fifth groove (813) and the sixth groove (814) are equal in depth, all being s9; the third groove (811), the fourth groove (812), the fifth groove (813) and the sixth groove (814) are connected to each other; the third groove (811) and the fourth groove (812) are rounded at the connection, and the chamfer radius of the outer side away from X is equal to r7; the third groove (811) and the fifth groove (813) are rounded at the connection; the sixth groove (814) and the fourth groove (812) are rounded at the connection, and the chamfer radius of the inner side close to X is equal to r2, and the chamfer radius of the outer side away from X is equal to r15; the sixth groove (814) and the fifth groove (813) are rounded at the connection, and the chamfer radius of the inner side close to X is equal to r2, and the chamfer radius of the outer side away from X is equal to r15; the front cover (8 1) A rectangular through groove (815) is dug from the microwave input end surface along the central axis XX' direction, connected to the rectangular channel (94); the width of the rectangular through groove (815) is equal to the width a38 of the rectangular channel (94), the height of the rectangular through groove (815) is equal to the height b26 of the rectangular channel (94), and the depth is equal to s22; the distance between the lower surface of the rectangular through groove (815) and the lower surface of the front cover (81) is s6; the distance between the upper surface of the rectangular through groove (815) and the upper surface of the front cover (81) is s19; the distance between the left surface of the rectangular through groove (815) and the left surface of the front cover (81) is a46; the distance between the right surface of the rectangular through groove (815) and the right surface of the front cover (81) is equal to a46;The end face of the front cover (81) away from X is fixedly connected to the end face of the rectangular bottom cover plate (821), the rectangular middle cover plate (822), and the rectangular upper cover plate (823) of the main cover (82) by screws; the front surface of the front cover (81) is welded to the front surface of the horizontal waveguide (72) in the curved waveguide (7), wherein the height of the rectangular through groove (815) is equal to b26, the width is equal to a38, and the height of the rectangular through groove (815) coincides with the center point of the sixth rectangular through groove (721) and they are connected to each other; The rear cover (83) is a convex metal cuboid, with a width equal to a43, a height equal to h22, and a thickness equal to s22. The rear cover (83) has four rectangular grooves dug from the edge to the direction close to the central axis XX' in the four directions of top, bottom, left, and right on the end surface away from X'. The rectangular groove near Z' below the rear cover (83) is the seventh groove (831). The width of the seventh groove (831) is equal to the width a43 of the rectangular bottom cover plate (821). The height of the seventh groove (831) is equal to the height h20 of the rectangular bottom cover plate (821). The rectangular groove on the right side close to Y is the eighth groove (832). The eighth groove (83 2) has a width equal to a44 of the rectangular middle cover plate (822), and a height of the eighth groove (832) equal to h21 of the rectangular middle cover plate (822); the rectangular groove on the right close to Y' is the ninth groove (833), the width of the ninth groove (833) is equal to a44 of the rectangular middle cover plate (822), and the height of the ninth groove (833) is equal to h21 of the rectangular middle cover plate (822); the rectangular groove on the upper side close to Z is the tenth groove (834), the width of the tenth groove (834) is equal to a43 of the rectangular upper cover plate (823), and the height of the tenth groove (834) is equal to h9; The seventh groove (831), the eighth groove (832), the ninth groove (833) and the tenth groove (834) have the same depth, which is equal to s9; the seventh groove (831), the eighth groove (832), the ninth groove (833) and the tenth groove (834) are interconnected; the connection between the seventh groove (831) and the eighth groove (832) is rounded; The seventh groove (831) and the ninth groove (833) are chamfered at their connection; the tenth groove (834) and the eighth groove (832) are chamfered at their connection, the chamfer radius of the inner side surface close to X' being equal to r2, and the chamfer radius of the outer side surface away from X' being equal to r15; the tenth groove (834) and the ninth groove (833) are chamfered at their connection, the chamfer radius of the inner side surface close to X' being equal to r2, and the chamfer radius of the outer side surface away from X' being equal to r15; the axial distance from the rear cover (83) to the end surface of the slotted waveguide (9) close to X' being equal to s4, satisfying b30=b29+2*s9+s4; the end surface of the rear cover (83) away from X' is fixedly connected to the end surface of the rectangular bottom cover plate (821), the rectangular middle cover plate (822), and the rectangular upper cover plate (823) of the main cover (82) by screws; The support rod (201) is a rectangular parallelepiped made of glass fiber reinforced plastic material, with a width equal to a45, a height of h23, and a length of b31. It is located between the rectangular middle plate (92) and the rectangular middle cover plate (822), and is fixed to the rectangular middle plate (92) by screws. There are N7 support rods (201) in total, and the N7 support rods (201) are divided into two rows, with the number of support rods in each row equal to N7 / 2. They are symmetrically distributed on the left and right sides of the rectangular middle plate (92) along the direction of the central axis XX'. The lateral spacing between the two rows of support rods (201) is equal to a41. The height spacing of the support rods (201) in the same row is s20. The spacing from the support rod (201) closest to the rectangular bottom plate (91) to the lower surface of the rectangular bottom plate (91) is s21. The distance from the support rod (201) closest to the rectangular upper plate (93) to the upper surface of the rectangular upper plate (93) is equal to s21. The slotted waveguide (9) radiates microwaves received from the curved waveguide (7), and the dielectric cover (8) wraps the slotted waveguide (9) in the dielectric cover (8). The dielectric cover (8) is filled with sulfur hexachloride gas, which can achieve good airtightness, isolate the slotted waveguide (9) from the external environment, and can withstand a low temperature of -50°C and a high temperature of 50°C. The front surface of the horizontal waveguide (72) in the curved waveguide (7) is welded to the front surface of the front cover (81) in the dielectric cover (8); the sixth rectangular through slot (721) and the rectangular through slot (815) have the same height and width, and the upper surface of the sixth rectangular through slot (721) and the upper surface of the rectangular through slot (815) are on the same horizontal plane, the lower surface of the sixth rectangular through slot (721) and the lower surface of the rectangular through slot (815) are on the same horizontal plane, the left surface of the sixth rectangular through slot (721) and the left surface of the rectangular through slot (815) are on the same vertical plane, and the right surface of the sixth rectangular through slot (721) and the right surface of the rectangular through slot (815) are on the same vertical plane.

2. The high power microwave waveguide slot antenna array according to claim 1, characterized in that N is a positive even number, and N=N4*2; N4=N3*2; N3=N2*2; N2=N1*2.

3. The high power microwave waveguide slot antenna array according to claim 1, characterized in that The chamfer angles of the left and right ends of the front surface of the welding cover (2) are equal to θ1, and the chamfer radius is equal to c1; the chamfer radius of the rounded corners of the left and right ends of the rear surface of the welding cover is equal to r1, and the chamfer radius is equal to r1 at the connection between the left chamfer of the welding cover (2) and the left end surface of the welding cover (2); the chamfer radius is equal to r1 at the connection between the right chamfer of the welding cover (2) and the right end surface of the welding cover (2).

4. The high power microwave waveguide slot antenna array according to claim 1, characterized in that The d and h4 requirements satisfy the rectangular waveguide TE 10 The mode microwave is power-divided in each level of T-shaped power-dividing cavities, that is, it satisfies λ0 / 2 < h4 < λ0, d < λ0 / 2, where λ0 is the wavelength in free space; the length b5 of the longitudinal part of the first-level T-shaped power-dividing cavity (1211), the width a1 of the transverse part of the first-level T-shaped power-dividing cavity (1211), the horizontal distance a6 from the left end face of the transverse part of the first-level T-shaped power-dividing cavity (1211) to the right surface of the left inclined middle plate (1322), the horizontal distance a10 from the left end face of the longitudinal part of the first-level T-shaped power-dividing cavity (1211) to the left end face of the transverse part of the first-level T-shaped power-dividing cavity (1211), the length a7 of the long side of the trapezoidal face of the first-level trapezoid (1212), the length a8 of the short side of the trapezoidal face, the height b6 of the trapezoidal face, the angle θ2 of the acute interior angle, the distance a9 from the left end of the rear end face of the first-level trapezoid (1212) to the left end of the transverse part of the first-level T-shaped power-dividing cavity (1211), the length b7 of the longitudinal part of the second-level T-shaped power-dividing cavity (1221), the width a11 of the transverse part of the second-level T-shaped power-dividing cavity (1221), the horizontal distance a12 from the left end face of the longitudinal part of the second-level T-shaped power-dividing cavity (1221) closest to the left inclined middle plate (1322) to the left end face of the transverse part of the second-level T-shaped power-dividing cavity (1221), the horizontal distance a13 from the right end face of the longitudinal part of the second-level T-shaped power-dividing cavity (1221) to the right end face of the transverse part of the second-level T-shaped power-dividing cavity (1221), the horizontal distance a14 from the left end face of the transverse part of the second-level T-shaped power-dividing cavity (1221) closest to the left inclined middle plate (1322) to the right surface of the left inclined middle plate (1322), the horizontal distance a15 between the right end face of the transverse part of the second-level T-shaped power-dividing cavity (1221) and the left end face of the transverse part of the adjacent second-level T-shaped power-dividing cavity (1221) on the right, the length a16 of the long side of the isosceles trapezoidal face of the second-level trapezoid (1222), the length a17 of the short side of the isosceles trapezoidal face, the height b8 of the trapezoidal face, the angle θ3 of the acute interior angle, the distance a18 from the left end of the rear end face of the second-level trapezoid (1222) closest to the left inclined middle plate (1322) to the left end face of the transverse part of the second-level T-shaped power-dividing cavity (1221), the distance a19 from the right end of the rear end face of the second-level trapezoid (1222) closest to the left inclined middle plate (1322) to the right end face of the transverse part of the second-level T-shaped power-dividing cavity (1221), the horizontal distance a20 between the right end of the rear end face of the second-level trapezoid (1222) and the left end of the rear end face of the adjacent second-level trapezoid (1222) on the right, the width a21 of the transverse part of the third-level T-shaped power-dividing cavity (1231), the horizontal distance a22 from the left end face of the longitudinal part of the third-level T-shaped power-dividing cavity (1231) closest to the left inclined middle plate (1322) to the left end face of the transverse part of the third-level T-shaped power-dividing cavity (1231), the horizontal distance a23 from the right end face of the longitudinal part of the third-level T-shaped power-dividing cavity (1231) closest to the left inclined middle plate (1322) to the right end face of the transverse part of the third-level T-shaped power-dividing cavity (1231), the horizontal distance a24 from the left end face of the transverse part of the third-level T-shaped power-dividing cavity (1231) closest to the left inclined middle plate (1322) to the left end face of the left inclined middle plate (1322),The horizontal distance a25 between the right end face of the transverse part of the three-stage T-shaped power splitting cavity (1231) and the left end face of the transverse part of the adjacent three-stage T-shaped power splitting cavity (1231) on the right, the length a26 of the long side of the isosceles trapezoidal surface of the three-stage trapezoidal body (1232), the length a27 of the short side of the isosceles trapezoidal surface, the height b9 of the isosceles trapezoidal surface, the angle θ4 of the acute internal angle, the distance from the left end of the rear end face of the three-stage trapezoidal body (1232) closest to the left inclined middle plate (1322) to the three-stage T-shaped power splitting cavity ( a28, a distance from the left end face of the transverse portion of the third-level trapezoidal body (1232) closest to the left inclined middle plate (1322) to the right end face of the transverse portion of the third-level T-shaped power dividing cavity (1231), a29, a horizontal distance from the right end of the rear end face of the third-level trapezoidal body (1232) to the left end face of the rear end face of the third-level trapezoidal body (1232) adjacent to the right, a30, a width a31, and a length b10 of the transverse portion of the fourth-level T-shaped power dividing cavity (1241) , the length of the longitudinal portion of the four-stage T-shaped power splitting cavity (1241) b11, the horizontal distance c4 from the left end face of the longitudinal portion of the four-stage T-shaped power splitting cavity (1241) to the left end face of the transverse portion of the four-stage T-shaped power splitting cavity (1241), the horizontal distance s4 from the left end face of the transverse portion of the four-stage T-shaped power splitting cavity (1241) closest to the left longitudinal middle plate (1324) to the right end face of the left longitudinal middle plate (1324), the horizontal distance s5 from the left end face of the four-stage capsule column (1242) to the four-stage T-shaped The distance a32 of the left end face of the power splitting cavity (1241), the width a33 of the four-stage capsule column (1242), the length b12, the distance b13 from the front top of the four-stage capsule column (1242) to the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241), and the horizontal distance a34 between the right end face of the four-stage capsule column (1242) and the left end face of the right adjacent four-stage capsule column (1242) need to achieve one-to-two power distribution, and ensure that the rectangular waveguide TE, 10 mode microwave transmission, and reduce the transmission of higher-order modes, when a1=a9+a7+a9=a10+d+a10, a11=a16+a18+a19=a12+d+a13, a20=a19+a15+a19, a34=a32+a32, a21=a22+d+a23=a28+a26+a29, a30=a29+a25+a29, a31=c4+d+c4=a33+a32+a33, and a1>a20>a11>a10>a9> a15>a30>a21>a12>a31>a13>a19>a34>a18>a6>a7>a25>a16>a22>a26>a23>a29>a32>a28>d>a24>c4>a14>a33>a17>a27>a8>s4, b10>b13>b12>b11>b6>b7>b8>b5, under the condition of 0°<θ2<θ3<θ4<90°, the transmission efficiency of the power divider distribution is set to be greater than 99%, using the electromagnetic simulation software CST , a32, a33, a34, c4, s4, b5, b6, b7, b8, b9, b10, b11, b12, b13, θ2, θ3, θ4, and h4 are optimized using StudioSuit.

5. The high power microwave waveguide slot antenna array according to claim 1, characterized in that The acute internal angle θ2 of the first-level trapezoidal body (1212), the acute internal angle θ3 of the second-level trapezoidal body (1222), and the acute internal angle θ4 of the third-level trapezoidal body (1232) satisfy θ2<θ3<θ4.

6. The high power microwave waveguide slot antenna array according to claim 1, characterized in that The chamfer angles of the left and right ends of the transverse parts of the power division channels of each level are equal to θ1, the chamfer dimensions of the first-level T-shaped power division cavity (1211) and the second-level T-shaped power division cavity (1221) are chamfered c2, the chamfer dimensions of the third-level T-shaped power division cavity (1231) are chamfered c3, the chamfer dimensions of the fourth-level T-shaped power division cavity (1241) are chamfered c4, the chamfer radius r1 of the connection between the right end face of the transverse middle plate (1321) and the left end face of the right inclined middle plate (1323), and the chamfer radius r2 of the connection between the rear end face of the waveguide port (134) and the transverse middle plate (1321) , the chamfer radius r3 of the connection between the front end face of the horizontal part of the first-stage T-shaped power splitting cavity (1211) and the rear end face of the longitudinal part of the first-stage T-shaped power splitting cavity (1211), the chamfer radius r4 of the connection between the chamfered rear surface of the first-stage T-shaped power splitting cavity (1211) and the left end face of the horizontal part of the first-stage T-shaped power splitting cavity (1211), the chamfer radius r5 of the connection between the inclined surface of the first-stage trapezoidal body (1212) and the front end face, the chamfer radius r6 of the connection between the left inclined surface of the second-stage trapezoidal body (1222) and the front end face, the chamfer radius r7 of the connection between the third-stage T-shaped power splitting cavity (1231) and the left inclined surface of the first-stage trapezoidal body (1232) and the front end face, ) The chamfer radius r7 at the connection between the front end face of the transverse part of the three-stage T-shaped power splitting cavity (1231) and the rear end face of the longitudinal part of the three-stage T-shaped power splitting cavity (1231); the chamfer radius r8 at the connection between the front end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) and the rear end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241); a plane parallel to the left end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) and having a distance r9 from the left end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) is chamfered at the intersection with the left end face of the four-stage T-shaped power splitting cavity (1241) The radius r9, the chamfer radius r10 of the right end of the front end surface of the longitudinal part of the fourth-stage T-shaped power splitting cavity (1241) closest to the left longitudinal middle plate (1324), the chamfer radii of the left and right ends of the lower surface of the first groove (1311) are equal to r11, and the chamfer radii r12 of the upper and lower ends of the rectangular through groove are required to meet the microwave lossless transmission conditions, that is, satisfy r6>r3>r11>r1>r9>r2>r10>r5>r7>r4>r8>r12, c1>c2>c4>c3, θ1=45°;The chamfer radius at the connection between the right end face of the transverse middle plate (1321) and the left end face of the right inclined middle plate (1323), the chamfer radius at the connection between the left end face of the transverse middle plate (1321) and the right end face of the left inclined middle plate (1322), the chamfer radius at the connection between the left end face of the left inclined middle plate (1322) and the front end face of the left longitudinal middle plate (1324), the chamfer radius at the connection between the right end face of the right inclined middle plate (1323) and the front end face of the right longitudinal middle plate (1325), the chamfer radius at the connection between the left end face of the housing upper plate (133) and the right end face of the left longitudinal middle plate (1324) away from O', the secondary T-shaped power splitter cavity (1221 ) the chamfer radius of the connection between the front end face of the transverse portion and the rear end face of the longitudinal portion of the secondary T-shaped power splitting chamber (1221), the chamfer radius of the left and right ends of the rear surface of the sealing plate (3), the chamfer radius of the connection between the front end face of the chamfered angle of the sealing plate (3) and the left and right ends of the front surface of the sealing plate (3), the chamfer radius of the connection between the right chamfered angle rear end face of the sealing plate (3) and the left end face of the sealing plate (3), the chamfer radius of the connection between the right chamfered angle rear end face of the sealing plate (3) and the right end face of the sealing plate (3), the chamfer radius of the connection between the left end face of the transverse middle plate (1321) and the right end face of the left inclined middle plate (1322), the chamfer radius of the inner surface of the connection between the left end face of the transverse middle plate (1321) and the right end face of the left inclined middle plate (1322), the chamfer radius of the transverse middle plate (1321) ) The inner surface chamfer radius of the connection between the right end face of the right inclined middle plate (1323) and the left end face, the inner surface chamfer radius of the connection between the left end face of the left inclined middle plate (1322) and the front end face of the left longitudinal middle plate (1324), and the inner surface chamfer radius of the connection between the right end face of the right inclined middle plate (1323) and the front end face of the right longitudinal middle plate (1325) are the same, and are all equal to r1; the outer surface chamfer radius of the connection between the rear end face of the waveguide port (134) and the front end face of the transverse middle plate (1321) and the chamfer radius of both ends of the upper surface of the second groove (1331) are the same, and are all equal to r2; the front end of the transverse part of the first-stage T-shaped power splitter cavity (1211) The chamfer radius at both ends of the connection between the end face and the rear end face of the longitudinal part of the first-stage T-shaped power splitting cavity (1211), the chamfer radius at one end of the front end face of the longitudinal part of the second-stage T-shaped power splitting cavity (1221) closer to the left and right end faces of the transverse part of the second-stage T-shaped power splitting cavity (1221), the chamfer radius at one end of the front end face of the longitudinal part of the third-stage T-shaped power splitting cavity (1231) closer to the left and right end faces of the transverse part of the third-stage T-shaped power splitting cavity (1231), the chamfer radius at the connection between the left inclined surface of the third-stage trapezoidal body (1232) and the front end face, and the chamfer radius at the connection between the right inclined surface of the third-stage trapezoidal body (1232) and the front end face are the same and are all equal to r3;The chamfer radius of the connection between the chamfered rear surface of the primary T-shaped power splitting cavity (1211) and the left end surface of the transverse part of the primary T-shaped power splitting cavity (1211), the chamfer radius of the connection between the chamfered rear surface of the primary T-shaped power splitting cavity (1211) and the right end surface of the transverse part of the primary T-shaped power splitting cavity (1211), the chamfer radius of the connection between the chamfered front surface of the primary T-shaped power splitting cavity (1211) and the two ends of the front surface of the transverse part of the primary T-shaped power splitting cavity (1211), the chamfer radius of the connection between the rear end surface of the primary trapezoidal body (1212) and the rear end surface of the transverse part of the primary T-shaped power splitting cavity (1211), and the chamfer radius of the connection between the secondary T-shaped power splitting cavity (1211). 21) the chamfer radius of the connection between the chamfered rear surface and the left end surface of the horizontal part of the secondary T-shaped power splitting cavity (1221), the chamfer radius of the connection between the chamfered rear surface of the secondary T-shaped power splitting cavity (1221) and the right end surface of the horizontal part of the secondary T-shaped power splitting cavity (1221), the chamfer radius of the connection between the chamfered front surface of the secondary T-shaped power splitting cavity (1221) and the two ends of the front surface of the horizontal part of the secondary T-shaped power splitting cavity (1221), the chamfer radius of the connection between the rear end surface of the secondary trapezoidal body (1222) and the rear end surface of the horizontal part of the secondary T-shaped power splitting cavity (1221), the chamfer radius of the connection between the chamfered rear surface of the tertiary T-shaped power splitting cavity (1231) and The chamfer radius of the left end surface of the three-stage T-shaped power splitting cavity (1231) transverse part is connected, the chamfer radius of the three-stage T-shaped power splitting cavity (1231) chamfered rear surface is connected with the right end surface of the three-stage T-shaped power splitting cavity (1231) transverse part, the chamfer radius of the three-stage T-shaped power splitting cavity (1231) chamfered front surface is connected with the two ends of the front surface of the three-stage T-shaped power splitting cavity (1231) transverse part, the chamfer radius of the two ends of the three-stage trapezoidal body (1232) is connected with the rear end surface of the three-stage T-shaped power splitting cavity (1231) transverse part, the chamfer radius of the four-stage T-shaped power splitting cavity (1241) closest to the left longitudinal middle plate (1324) is connected. The chamfer radius at the intersection of the rounded corner and the left longitudinal middle plate (1324) and the chamfer radius at the intersection of the rounded corner of the fourth-stage T-shaped power splitter (1241) closest to the right longitudinal middle plate (1325) and the right longitudinal middle plate (1325) are the same, both equal to r4; the chamfer radius at the connection between the left inclined surface of the first-stage trapezoidal body (1212) and the front end surface and the chamfer radius at the connection between the right inclined surface of the first-stage trapezoidal body (1212) and the front end surface are the same, both equal to r5; the chamfer radius at the connection between the left inclined surface of the second-stage trapezoidal body (1222) and the front end surface and the chamfer radius at the connection between the right inclined surface of the second-stage trapezoidal body (1222) and the front end surface are the same, both equal to r6; The front end face of the lateral part of the three-stage T-shaped power splitting cavity (1231) and the rear end face of the longitudinal part of the three-stage T-shaped power splitting cavity (1231) are chamfered at both ends of the connection, and the plane parallel to the left end face of the lateral part of the four-stage T-shaped power splitting cavity (1241) and the distance to the left end face of the lateral part of the four-stage T-shaped power splitting cavity (1241) is equal to r9. The chamfer radius at the intersection of the left chamfered rear surface of the four-stage T-shaped power splitting cavity (1241), parallel to the right end face of the lateral part of the four-stage T-shaped power splitting cavity (1241) and the right end face of the lateral part of the four-stage T-shaped power splitting cavity (1241) The plane with a distance equal to r9 and the right chamfered rear surface of the four-stage T-shaped power splitting cavity (1241) have the same chamfer radius at the intersection, both of which are equal to r7; the plane parallel to the left end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) and the distance to the left end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) is equal to r9, and the plane parallel to the right end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) and the distance to the right end face of the transverse part of the four-stage T-shaped power splitting cavity (1241) is equal to r9. The chamfer radius of the right end face of the four-stage T-shaped power splitting cavity (1241) at the intersection and the chamfer radius of both ends of the four-stage capsule column (1242) are the same, all equal to r9; the chamfer radius of the right end of the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) closest to the left longitudinal middle plate (1324), the chamfer radius of the left end of the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) closest to the right longitudinal middle plate (1325), the chamfer radius of the left end of the front end face of the longitudinal part of the four-stage T-shaped power splitting cavity (1241) second closest to the left longitudinal middle plate (1324), The chamfer radius of the right end of the front end surface of the longitudinal part of the fourth-stage T-shaped power splitting cavity (1241) which is the second closest to the right longitudinal middle plate (1325) is the same, which is equal to r10; the chamfer radius of the upper and lower ends of the left rectangular through groove (431), the chamfer radius of the upper and lower ends of the fifth rectangular plate (425), the chamfer radius of the upper and lower ends of the sixth rectangular plate (426), the chamfer radius of the upper and lower ends of the right rectangular through groove (432), the chamfer radius of the upper and lower ends of the seventh rectangular plate (427), and the chamfer radius of the upper and lower ends of the eighth rectangular plate (428) are the same, which is equal to r12.

7. The high power microwave waveguide slot antenna array according to claim 1, characterized in that The width a41 and height h24 of the slotted waveguide (9) need to satisfy the transmission of the TE 10 mode therein, that is, a41 < λ0 / 2 and λ0 / 2 < h24 < λ0, where λ0 is the wavelength in free space; the width of the rectangular bottom plate (91) is equal to the width of the rectangular upper plate (93) and is smaller than the height b26 of the rectangular middle plate (92), satisfying b26 > h9 > h19 > 0; the sum of the height h19 of the rectangular bottom plate (91), the height b26 of the rectangular middle plate (92) and the height h9 of the rectangular upper plate (93) is equal to the height h24 of the slotted waveguide (9), that is, h19 + b26 + h9 = h24; the width a42 of the rectangular middle plate (92) and the width a38 of the rectangular channel (94) satisfy 2*a42 + a38 = a41; under the condition of satisfying the transmission of the microwave TE 10 mode, the exact values of a41, a42, a38, h19, b26, h9, and h24 are obtained by simulating with the electromagnetic simulation software CST Studio Suit. The length b29 of the slotted waveguide (9) should be related to the number and position of the waveguide slots (95) and should satisfy b29 = (K - 1)*b32 + 2*s23.

8. The high power microwave waveguide slot antenna array according to claim 1, characterized in that The width a43 of the dielectric cover (8), the height h22 of the dielectric cover (8), the thickness s22 of the front cover (81), the depth s9 of the first annular through groove, the height h20 of the rectangular bottom cover plate (821), the width a44 of the rectangular middle cover plate (822), the height h21 of the rectangular middle cover plate (822), and the height h9 of the rectangular upper cover plate (823) are such that the slotted waveguide (9) is completely wrapped in the dielectric cover (8); and under the conditions that h20+h21+h9=h22, and a43>a41>a44, h22>h21>h9>h20, electromagnetic simulation software CST Studio Suit simulation obtains the precise values ​​of a43, a44, h20, h21, h9 and h22; the thickness s22 of the front cover (81) is greater than 5 mm, the depths s9 of the third groove (811), the fourth groove (812), the fifth groove (813) and the sixth groove (814) are greater than 3 mm, and the axial distance s4 from the rear cover to the end face of the slotted waveguide (9) close to X' is less than 2 mm; the thickness of the rear cover is equal to the thickness s22 of the front cover (81); the third groove (811) , the depths of the fourth groove (812), the fifth groove (813) and the sixth groove (814) and the depths of the seventh groove (831), the eighth groove (832), the ninth groove (833) and the tenth groove (834) are equal to s9; the length of the dielectric cover (8) b28 = b30 + 2*(s22-s9) = b29 + s4 + 2*s22; the chamfer radius r12 of the inner surface of the connection between the rectangular bottom cover plate (821) and the two rectangular middle cover plates (822) The chamfer radius r7 of the outer surface of the connection between the rectangular bottom cover plate (821) and the two rectangular middle cover plates (822), the chamfer radius r2 of the inner surface of the connection between the rectangular upper cover plate (823) and the two rectangular middle cover plates (822), and the chamfer radius r15 of the outer surface of the connection between the rectangular upper cover plate (823) and the two rectangular middle cover plates (822) meet the microwave lossless transmission condition, and r15>r2>r7>r12; the connection between the third groove (811) and the fourth groove (812) The chamfer radius of the inner side surface close to X, the chamfer radius of the inner side surface close to X at the connection between the third groove (811) and the fifth groove (813), the chamfer radius of the inner side surface close to X' at the connection between the seventh groove (831) and the eighth groove (832), and the chamfer radius of the inner side surface close to X' at the connection between the seventh groove (831) and the ninth groove (833) are the same as the chamfer radius of the inner surface at the connection between the rectangular bottom cover plate (821) and the two rectangular middle cover plates (822), and are all equal to r12;The chamfer radius of the inner side surface near X at the connection between the sixth groove (814) and the fourth groove (812), the chamfer radius of the inner side surface near X at the connection between the sixth groove (814) and the fifth groove (813), the chamfer radius of the inner side surface near X' at the connection between the tenth groove (834) and the eighth groove (832), and the chamfer radius of the inner side surface near X' at the connection between the tenth groove (834) and the ninth groove (833) are the same as the chamfer radius of the inner surface at the connection between the rectangular upper cover plate (823) and the two rectangular middle cover plates (822), and are all equal to r2; the chamfer radius of the outer side surface away from X at the connection between the third groove (811) and the fourth groove (812), the chamfer radius of the outer side surface away from X at the connection between the third groove (811) and the fifth groove (813), and the chamfer radius of the inner side surface away from X at the connection between the seventh groove (831) and the eighth groove (832) The chamfer radius of the outer side surface of the connection between the seventh groove (831) and the ninth groove (833) away from X' is the same as the chamfer radius of the outer surface of the connection between the rectangular bottom cover plate (821) and the two rectangular middle cover plates (822), and is equal to r7; the chamfer radius of the outer side surface of the connection between the sixth groove (814) and the fourth groove (812) away from X, the chamfer radius of the outer side surface of the connection between the sixth groove (814) and the fifth groove (813) away from X, the chamfer radius of the outer side surface of the connection between the tenth groove (834) and the eighth groove (832) away from X', and the chamfer radius of the outer side surface of the connection between the tenth groove (834) and the ninth groove (833) away from X' are the same as the chamfer radius of the outer surface of the connection between the rectangular upper cover plate (823) and the two rectangular middle cover plates (822), and are equal to r15. ; 9. The high power microwave waveguide slot antenna array according to claim 1, characterized in that The normalized equivalent conductance of each waveguide slot (95) is Where S 1,1 The invention discloses a reflection coefficient of an input port of a high-power waveguide slot array antenna 101 with a dielectric cover (8) obtained by simulating the electromagnetic simulation software CST Studio Suit when the waveguide slot (95) is in a resonant state; the mathematical relationship between the normalized resonant conductance g of K waveguide slots (95) and the length b34 of the waveguide slot (95) is obtained by simulating the electromagnetic simulation software CST Studio Suit; the size of the normalized equivalent conductance is changed by changing the inclination angle θ of the waveguide slot (95), and the depth c9 of the waveguide slot (95) cut into the wide side is adjusted to make the slot in a resonant state; the mathematical relationship between the normalized resonant conductance g of K waveguide slots (95) and the inclination angle θ of the waveguide slot (95) is obtained by simulating the electromagnetic simulation software CST Studio Suit; the mathematical relationship between the normalized resonant conductance g of K waveguide slots (95) and the depth c9 of the waveguide slot (95) is obtained by simulating the electromagnetic simulation software CST Studio Suit. Suit simulation results show that the axial spacing b32 between adjacent waveguide slots (95) is required to be equal to λ g / 2, the axial spacing from the waveguide slot (95) closest to the front cover (81) to the slotted waveguide (9) near the X end face and the axial spacing from the waveguide slot (95) closest to the rear cover to the slotted waveguide (9) near the X' end face should be equal, both are s23, and equal to λ g / 2,λ g is the operating wavelength of the slotted waveguide (9).

10. The high power microwave waveguide slot antenna array according to claim 1, characterized in that The height h25 of the support column (10) satisfies h25 + h24 = h21, and the diameter c8 satisfies > 5 mm; the axial spacing s24 between the support column (10) closest to the rear cover and the rear cover satisfies (s24 - s4) * 2 = s23, s24 < s23 < b33, and the number N6 of support columns (10) is N6 = (b28 - s22 - s24) / b33; b33 is the axial spacing between adjacent support columns (10), which reduces the influence on the slotted waveguide (9) while satisfying the function of the support medium cover (8), and h24 is the height of the slotted waveguide (9); the width a45 of the support rod (201) satisfies a41 + 2 * a45 + 2 * a44 = a43 and a43 > a41 > a44 > a45, the height is h23, and the longitudinal spacing s20 of the support rods (201) in the same column satisfies h22 > h21 > s20 > h9 > h20 > h23; the number N7 of support rods (201) is N7 = 2 * ((h24 - 2 * s21) / s20 + 1), and the length b31 of the support rod (201) is b31 = b29 + s4.

11. The high power microwave waveguide slot antenna array according to claim 1, characterized in that The distance s6 from the lower surface of the rectangular through slot (815) to the lower surface of the front cover (81) is s6 = h19 + h20, the distance s19 from the upper surface of the rectangular through slot (815) to the upper surface of the front cover (81) is s19 = h9 + h25 + h9, and the distance a46 from the left surface of the rectangular through slot (815) to the left surface of the front cover (81) is a46 = a42 + a44 + a45.

12. The high power microwave waveguide slot antenna array according to claim 1 or 4 or 5 or 6 or 7 or 8 or 9 or 10, characterized in that Through the electromagnetic simulation software CST Studio Suit, under the conditions that N = N4 * 2, N4 = N3 * 2, N3 = N2 * 2, N2 = N1 * 2, N5 = a5 / s7, h1 = h9 + h10, h2 = h8 + h9, h3 = h1 + h2 + h4, a34 = a32 + a32, b1 = b3 + b14 = 2 * d + b5 + b7 + b11 + b10, a1 = a9 + a7 + a9 = a10 + d + a10, a30 = a29 + a25 + a29, a11 = a16 + a18 + a19 = a12 + d + a13, a21 = a22 + d + a23 = a28 + a26 + a29, a31 = c4 + d + c4 = a33 + a32 + a33, a20 = a19 + a15 + a19, a0 = 2 * c1 + a2 = 2 * s1 + a3 = 2 * s1 + 2 * s4 + 2 * a32 + a33 * N4 + a34 * (N4 - 1), and a0 > a3 > a5 > a2 > a1 > a20 > a11 > a10 > a9 > a15 > a30 > a21 > a12 > a31 > a13 > a19 > a4 > a34 > a18 > a6 > a7 > a25 > a16 > a22 > a26 > a23 > a29 > a32 > a28 > a24 > a14 > a33 > a17 > a27 > a8, s5 > s2 > s1 > s6 > s3 > s4 > s7, b1 > b14 > b2 > b10 > b13 > b12 > b3 > b15 > b11 > b6 > b9 > b7 > b4 > b8 > b5 > b16, c1 > c2 > c4 > c3, h3 > h11 > h4 > h1 > h10 > h2 > h8 > h7 > h5 > h6 > h9, r6 > r3 > r11 > r1 > r9 > r2 > r10 > r5 > r7 > r4 > r8 > r12, L1 = c1 * sinθ1, θ1 = 45°, 0° < θ2 < θ3 < θ4 < 90°, set the allocated transmission efficiency to be greater than 99%, and obtain the parameters N1, N2, N3, N4, N5, L1, a0, a1, a2, a3, a4, a5, a6, a7, a8, a9, a10, a11, a12, a13, a14, a15, a16, a17, a18, a19, a20, a21, a22, a23, a24, a25, a26, a27, a28, a29, a30, a31, a32, a33, a34, b1, b2, b3, b4, b5, b6, b7, b8, b9, b10, b11, b12, b13, b14, b15, b16, h1, h2, h3, h4, h5, h6, h7, h8, h9, h10, h11, s1, s2, s3, s4, s5, s6, s7, c1, c2, c3, c4, c1, r1, r2, r3, r4, r5, r6, r7, r8, r9, r10, r11, r12, θ1, θ2, θ3,The exact value of θ4; through the electromagnetic simulation software CST Studio Suit, when a38+s17+s17=d, a38+s3+s3=a39, d+s18+s18=a40, a38+s2+s2=a37, b26+s17+s17=s10, b27+s17=b25, s7+s3=h15, s3+a8=s2, b19+s5=b20+b21=b18, a35>a37>a40>a39>a36>a38, h12>h13>h16>h18>h14>h15, b18>b19>b20>b22>b25>b23>b27>b24>b26>b21>b1 7, s12>s10>s8>s11>s13>s9>s18>s17, c7>c6>c5, setting the transmission efficiency of the partition plate, flange and curved waveguide to be greater than 99%, the precise values ​​of parameters a35, a36, a37, a38, a39, a40, b17, b18, b20, b21, b22, b23, b24, b25, b26, b27, h12, h13, h14, h15, h16, h18, s8, s9, s10, s11, s12, s13, s17, s18, c5, c6, c7, r14 can be obtained; by using the electromagnetic simulation software CST Studio Suit, when b29=(K-1)*b32+2*s23, b28=b30+2*(s22-s9)=b29+s4+2*s22, b30=b29+2*s9+s4, b3 1=b29+s4, N6=(b28-s22-s24) / b33, N7=2*((h24-2*s21) / s20+1), 2*a42+a38=a41, a41+2*a45+ 2*a44=a43, a46=a42+a44+a45, h19+b26+h9=s21+s20+s21=h24, h20+h21+h9=s6+b26+s19=h22, h25+h24=h21, (s24-s4)*2=s23, s6=h19+h20, s19=h9+h25+h9, a43>a41>c8>a44>a45>a42, λ0 / 2 <h24<λ0,a41<λ0 / 2,h22> Under the conditions of h21>h24>s20>h9>h20>h23>h19,s22>5mm,s9>3mm,s23<2mm, setting the antenna radiation efficiency greater than 99%, we can obtain parameters K, N6, N7, a41, a42, a43, a44, a45, a46, b28, b29, b30, b31, b32, b33, b34, h19, h20, h21, h22, h23, h24, h25, s19, s20, s21, s22, s23, s24, c8,The exact value of c9.

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