Turn-off circuit, drive circuit, igct, electrical device and turn-off method
By adjusting the PN junction voltage between the control electrode and the first lead in the IGCT turn-off circuit, the problem of balancing reliability and safety during IGCT turn-off is solved, achieving higher device turn-off reliability and PN junction safety.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TSINGHUA UNIVERSITY
- Filing Date
- 2025-04-25
- Publication Date
- 2026-06-02
AI Technical Summary
In related technologies, it is difficult to simultaneously ensure the reliability of turn-off of integrated gate commutated thyristors (IGCT) and the safety of the PN junction between the control electrode and the first lead.
A shutdown circuit is provided, including a control device and a voltage regulation circuit. By controlling the on, off, or clamping of a voltage-adjustable switching element at a predetermined voltage, the PN junction voltage between the control electrode and the first lead of the GCT is adjusted to ensure that the PN junction is under appropriate reverse bias voltage under different states.
This improves the reliability of IGCT turn-off and the safety of the PN junction between the control electrode and the first lead, solving the problem of balancing reliability and safety during turn-off.
Smart Images

Figure CN120110367B_ABST