Ferroelectric regulation and control polarized photoelectric detection device array and preparation and application method thereof

Abstract

The invention discloses a ferroelectric regulation and control polarized photoelectric detector array and a preparation and application method thereof. According to the invention, polarized light detection is realized by each independent photoelectric detection device by using the anisotropy of the alpha-In2Se3 lattice structure, and the alpha-In2Se3 has a significant anisotropic lattice structure and an excellent light response characteristic, so that the photoelectric detection device has good performance; therefore, the problem of low polarization sensitivity of the current two-dimensional material polarized photoelectric detector is solved; the polarization sensitivity can be further improved by applying electric pulses to regulate and control ferroelectric polarization of the photoelectric detector, and the problem that the polarization sensitivity of a current two-dimensional material polarized photoelectric detector cannot be regulated and controlled is solved; and finally, a series of functions such as imaging adjustment, polarization information storage or polarization information calculation can be realized by regulating and controlling ferroelectric polarization of photoelectric detectors at different cross nodes, and the problem of single function of a current two-dimensional material polarized photoelectric detector is solved.

Description

Technical Field

[0001] The present invention relates to the field of polarization photoelectric detection technology, and in particular to a ferroelectrically regulated polarization photoelectric detection device array and a preparation and application method thereof. Background Art

[0002] Identifying the polarization state of light helps to obtain more information about matter. Therefore, polarized light detection plays an important role in civilian and military fields. However, traditional polarization photodetectors usually require integrated polarizers to detect polarized light, which is not conducive to high-density integration of devices and further increases the cost of devices. Some two-dimensional materials have inherent polarization detection capabilities due to their anisotropic lattice structure. Therefore, the development of two-dimensional material polarization photodetectors can achieve polarized light detection without the need for external polarizers. At the same time, the thin nature of two-dimensional materials reduces the volume of polarization photodetectors, making them more conducive to high-density device integration. In addition, the unique physical properties of two-dimensional materials help to develop new functions. The strong quantum confinement enhancement at the nanometer size gives it a strong interaction between light and matter, and the arbitrary integration of the interface without dangling bonds makes it possible to be compatible with CMOS. Therefore, two-dimensional materials are very promising candidates for the development of a new generation of high-performance, multifunctional, small-size integrated photodetectors.

[0003] However, most of the current two-dimensional material polarization photodetectors have the problems of low polarization sensitivity, uncontrollable polarization sensitivity and single function. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a ferroelectrically regulated polarization photodetector device array and a preparation and application method thereof, so as to solve the problems that the current two-dimensional material polarization photodetector has low polarization sensitivity, cannot be regulated, and has a single function.

[0005] The first aspect of the present invention provides a ferroelectric polarization control photodetector array, comprising a plurality of bottom electrodes arranged in parallel, an α-In 2 Se 3 The sheet and the α-In 2 Se 3 A plurality of top electrodes arranged in parallel on the sheet, wherein the top electrodes and the bottom electrodes are perpendicularly crossed to form a plurality of cross nodes, and the bottom electrode, α-In 2 Se 3 The thin film and the top electrode constitute an independent photodetection device.

[0006] The second aspect of the present invention provides a method for preparing a ferroelectrically controlled polarization photodetector array, comprising the following steps: preparing a plurality of bottom electrodes arranged in parallel; preparing α-In on the bottom electrodes; 2Se 3 Thin sheet; in α-In 2 Se 3 A plurality of parallel top electrodes are prepared on the thin film, wherein the top electrodes and the bottom electrodes are perpendicularly crossed to form a plurality of cross nodes, and the bottom electrode, α-In 2 Se 3 The thin film and the top electrode constitute an independent photodetection device.

[0007] The third aspect of the present invention provides an application method of a ferroelectrically controlled polarization photodetector device array, wherein the ferroelectrically controlled polarization photodetector device array adopts the ferroelectrically controlled polarization photodetector device array described above, and the application method of the ferroelectrically controlled polarization photodetector device array comprises the following steps: under polarized light, reading the photocurrent of the photodetector device at an intersection node, and identifying the polarization state of the light at the corresponding intersection node according to the photocurrent; reading the photocurrent of the photodetector devices at all intersection nodes one by one, obtaining the polarization information of the light in the entire array surface and performing imaging.

[0008] The ferroelectric polarization control photoelectric detection device array and its preparation and application method, each individual photoelectric detection device in the device array can utilize α-In 2 Se 3 The anisotropy of the lattice structure enables the detection of polarized light through photocurrent response. In the entire device array, photodetectors at different positions can realize local detection of polarized light information over a wide range. 2 Se 3 The photodetector device has a significantly anisotropic lattice structure and excellent light response characteristics, which makes it have good performance, thereby solving the problem of low polarization sensitivity of the current two-dimensional material polarization photodetector; in addition, α-In 2 Se 3 Ferroelectric polarization has a certain regulatory effect on polarization sensitivity. The ferroelectric polarization of the photoelectric detection device at the corresponding intersection node can be changed by applying an electric pulse, thereby regulating the polarization sensitivity of the corresponding device, further improving the polarization sensitivity, and solving the problem that the polarization sensitivity of the current two-dimensional material polarization photodetector is not high and cannot be controlled; finally, by regulating the ferroelectric polarization of the photoelectric detection device at different intersection nodes, a series of functions such as imaging adjustment, polarization information storage or polarization information calculation can be realized, solving the problem that the current two-dimensional material polarization photodetector has a single function. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a schematic structural diagram of the ferroelectrically controlled polarization photodetector device array of the present invention. DETAILED DESCRIPTION

[0010] In order to enable those skilled in the art to more clearly understand the objectives, technical solutions and advantages of the present invention, the present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0011] like Figure 1 As shown, in one embodiment of the present invention, the ferroelectrically controlled polarization photodetector device array includes a plurality of bottom electrodes 10 arranged in parallel, an α-In 2 Se 3 The sheet 20 and the α-In 2 Se 3 The top electrodes 30 are arranged in parallel on the thin film 20, and the top electrodes 30 are perpendicularly crossed with the bottom electrodes 10 to form a plurality of intersection nodes. 2 Se 3 The thin film 20 and the top electrode 30 constitute an independent photodetection device.

[0012] In some embodiments of the present invention, the bottom electrode 10 may be a gold electrode or a palladium electrode. Since the adhesion of gold and palladium metals is poor, a layer of titanium needs to be grown at the bottom of the gold electrode or palladium electrode as an adhesion layer to increase the adhesion. In other words, in these embodiments, the bottom electrode 10 includes a metal electrode layer and an adhesion layer grown at the bottom of the metal electrode layer; wherein the metal electrode layer is a gold electrode layer or a palladium electrode layer with a thickness of 30 to 50 nm; and the adhesion layer is a titanium adhesion layer with a thickness of 5 to 10 nm. Of course, in other embodiments of the present invention, the bottom electrode 10 may also be a chromium electrode with a thickness of 30 to 50 nm. Since the adhesion of chromium metal is good, there is no need to set a titanium adhesion layer at the bottom of the chromium electrode.

[0013] The α-In 2 Se 3 The thickness of the thin sheet is 20-60 nm. The top electrode is a transparent electrode, made of indium tin oxide, fluorine-doped tin oxide, thin-layer graphene or other transparent materials, with a thickness of 60-120 nm.

[0014] The ferroelectric polarization control photoelectric detection device array provided by the present invention is based on α-In 2 Se 3 The vertical cross structure device array of the functional layer, α-In 2 Se 3 It is a two-dimensional layered ferroelectric semiconductor with a significantly anisotropic lattice structure and excellent photoresponse properties. 2 Se 3 Due to the anisotropy of the lattice structure, each of the photodetector devices in the array can utilize α-In 2 Se 3The anisotropy of the lattice structure enables the detection of polarized light through photocurrent response.

[0015] In addition, α-In 2 Se 3 It also has a stable ferroelectric polarization as low as a monolayer. Ferroelectric polarization regulation of polarization detection is a very promising regulation method. The non-volatility of ferroelectricity makes regulation have lower power consumption, and ferroelectricity can precisely control ferroelectric polarization through an external electric field, which has great potential for realizing flexible and controllable polarization photodetection. Therefore, α-In can be regulated 2 Se 3 The ferroelectric polarization of the array is used to regulate the electrical and optical properties of the photodetector device at the corresponding cross node, thereby independently adjusting the polarization sensitivity of each photodetector device in the array, thereby achieving flexible and controllable polarization detection.

[0016] The working mode of the ferroelectric polarization control photoelectric detection device array of the present invention is: by selecting a top electrode and a bottom electrode, the photocurrent of the photoelectric detection device at the intersection of the corresponding top electrode and the bottom electrode is read, so as to identify the polarization state of the local light of the corresponding intersection node; by reading the photocurrent of all photoelectric detection devices in the entire array one by one, the polarization information of the light in the entire array surface can be obtained and imaging can be performed. By selecting a top electrode and a bottom electrode and applying an electric pulse, the α-In of the photoelectric detection device at the corresponding intersection node can be changed individually. 2 Se 3 The ferroelectric polarization of the photodetector at different cross nodes is adjusted to adjust the polarization sensitivity of the corresponding photodetector, so that the device array has a flexible and adjustable polarization detection function. 2 Se 3 The ferroelectric polarization can realize a series of functions such as imaging adjustment, polarization information storage or polarization information calculation.

[0017] The ferroelectric polarization control photodetector device array of the present invention can utilize α-In 2 Se 3 The anisotropy of the lattice structure enables the detection of polarized light through photocurrent response. In the entire device array, photodetectors at different positions can realize local detection of polarized light information over a wide range. 2 Se 3 The photodetector device has a significantly anisotropic lattice structure and excellent light response characteristics, which makes it have good performance, thereby solving the problem of low polarization sensitivity of the current two-dimensional material polarization photodetector; in addition, α-In 2 Se 3Ferroelectric polarization has a certain regulatory effect on polarization sensitivity. The ferroelectric polarization of the photoelectric detection device at the corresponding intersection node can be changed by applying an electric pulse, thereby regulating the polarization sensitivity of the corresponding device, further improving the polarization sensitivity, and solving the problem that the polarization sensitivity of the current two-dimensional material polarization photodetector is not high and cannot be controlled; finally, by regulating the ferroelectric polarization of the photoelectric detection device at different intersection nodes, a series of functions such as imaging adjustment, polarization information storage or polarization information calculation can be realized, solving the problem that the current two-dimensional material polarization photodetector has a single function.

[0018] The present invention also provides a method for preparing a ferroelectrically controlled polarization photodetector array, which comprises the following steps: preparing a plurality of bottom electrodes arranged in parallel; preparing α-In on the bottom electrodes; 2 Se 3 Thin sheet; in α-In 2 Se 3 A plurality of parallel top electrodes are prepared on the thin film, wherein the top electrodes and the bottom electrodes are perpendicularly crossed to form a plurality of cross nodes, and the bottom electrode, α-In 2 Se 3 The thin film and the top electrode constitute an independent photodetection device.

[0019] The ferroelectric polarization control photodetector device array prepared by the preparation method of this embodiment can utilize α-In 2 Se 3 The anisotropy of the lattice structure enables the detection of polarized light through photocurrent response. In the entire device array, photodetectors at different positions can realize local detection of polarized light information over a wide range. 2 Se 3 The photodetector device has a significantly anisotropic lattice structure and excellent light response characteristics, which makes it have good performance, thereby solving the problem of low polarization sensitivity of the current two-dimensional material polarization photodetector; in addition, α-In 2 Se 3 Ferroelectric polarization has a certain regulatory effect on polarization sensitivity. The ferroelectric polarization of the photoelectric detection device at the corresponding intersection node can be changed by applying an electric pulse, thereby regulating the polarization sensitivity of the corresponding device, further improving the polarization sensitivity, and solving the problem that the polarization sensitivity of the current two-dimensional material polarization photodetector is not high and cannot be controlled; finally, by regulating the ferroelectric polarization of the photoelectric detection device at different intersection nodes, a series of functions such as imaging adjustment, polarization information storage or polarization information calculation can be realized, solving the problem that the current two-dimensional material polarization photodetector has a single function.

[0020] The present invention also provides an application method of a ferroelectrically controlled polarization photoelectric detection device array, wherein the ferroelectrically controlled polarization photoelectric detection device array adopts Figure 1 The ferroelectrically controlled polarization photodetector device array in the embodiment shown, and the application method of the ferroelectrically controlled polarization photodetector device array include steps S10-S20:

[0021] S10: reading a photocurrent of a photodetector device at a cross node under polarized light, and identifying a polarization state of light at a corresponding cross node according to the photocurrent;

[0022] S20 reads the photocurrents of the photodetection devices at all the cross nodes one by one, obtains the polarization information of the light in the entire array plane and performs imaging.

[0023] In steps S10-S20, the photocurrent of the photodetector device at the intersection of the corresponding top electrode and the bottom electrode is read by selecting a top electrode and a bottom electrode, so as to identify the polarization state of the local light at the corresponding intersection node; by reading the photocurrent of all the photodetectors in the entire array one by one, the polarization information of the light in the entire array surface can be obtained and imaging can be performed.

[0024] In one embodiment of the present invention, the application method of the ferroelectric polarization control photoelectric detection device array further includes step S30: applying electric pulses to the top electrode and the bottom electrode to control the α-In of the photoelectric detection devices at different intersection nodes. 2 Se 3 ferroelectric polarization.

[0025] In step S30, by selecting a top electrode and a bottom electrode and applying an electric pulse, the α-In of the photodetector device at the corresponding intersection node can be changed separately. 2 Se 3 The ferroelectric polarization of the photodetector at different cross nodes is adjusted to adjust the polarization sensitivity of the corresponding photodetector, so that the device array has a flexible and adjustable polarization detection function. 2 Se 3 The ferroelectric polarization can realize a series of functions such as imaging adjustment, polarization information storage or polarization information calculation.

[0026] The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Those skilled in the art can make various equivalent changes and improvements based on the above embodiments, and all equivalent changes or modifications made within the scope of the claims should fall within the protection scope of the present invention.

Claims

1. A ferroelectric polarization control photodetector device array, characterized in that: It includes a plurality of bottom electrodes arranged in parallel, an α-In2Se3 thin sheet arranged on the bottom electrode, and a plurality of top electrodes arranged in parallel on the α-In2Se3 thin sheet. The top electrode and the bottom electrode are vertically crossed to form a plurality of intersection nodes. The bottom electrode, α-In2Se3 thin sheet and top electrode at each intersection node constitute an independent photoelectric detection device.

2. The ferroelectric polarization control photodetector device array according to claim 1, characterized in that: The bottom electrode includes a metal electrode layer and an adhesion layer grown on the bottom of the metal electrode layer.

3. The ferroelectrically controlled polarization photodetector device array according to claim 2, characterized in that: The metal electrode layer is a gold electrode layer or a palladium electrode layer, and the adhesion layer is a titanium adhesion layer.

4. The ferroelectrically controlled polarization photodetector device array according to claim 3, characterized in that: The thickness of the metal electrode layer is 30-50 nm, and the thickness of the adhesion layer is 5-10 nm.

5. The polarization photodetector device array according to claim 1, characterized in that: The bottom electrode is a chromium electrode, and the thickness of the bottom electrode is 30-50 nm.

6. The ferroelectrically controlled polarization photodetector device array according to claim 1, characterized in that: The thickness of the α-In2Se3 thin film is 20 to 60 nm.

7. The ferroelectric polarization control photodetector device array according to claim 1, characterized in that: The top electrode is a transparent electrode, which is made of indium tin oxide, fluorine-doped tin oxide or thin-layer graphene; the thickness of the top electrode is 60-120nm.

8. A method for preparing a ferroelectrically controlled polarization photodetector device array, characterized in that: The steps include: preparing a plurality of bottom electrodes arranged in parallel; Fabricate α-In2Se3 thin sheets on the bottom electrode; A plurality of parallel top electrodes are prepared on an α-In2Se3 thin film. The top electrodes and the bottom electrodes are vertically crossed to form a plurality of intersection nodes. The bottom electrode, the α-In2Se3 thin film and the top electrode at each intersection node constitute an independent photoelectric detection device.

9. An application method of a ferroelectric polarization control photodetector device array, characterized in that: The ferroelectrically controlled polarization photodetector device array adopts the ferroelectrically controlled polarization photodetector device array according to any one of claims 1 to 7, and the application method of the ferroelectrically controlled polarization photodetector device array comprises the following steps: Under polarized light, reading a photocurrent of a photodetector device at a cross node, and identifying a polarization state of light at a corresponding cross node according to the photocurrent; The photocurrents of the photodetection devices at all cross nodes are read out one by one, and the polarization information of the light in the entire array plane is obtained and imaged.

10. The application method of the ferroelectric polarization control photodetector device array according to claim 9, characterized in that: The method also includes the following steps: applying electric pulses to the top electrode and the bottom electrode to control the ferroelectric polarization of α-In2Se3 of the photoelectric detection device at different intersection nodes.

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