Silicon-based OLED (Organic Light Emitting Diode) device structure with light condensation and visual angle inclination functions

Abstract

The invention relates to the technical field of silicon-based OLED devices, in particular to a silicon-based OLED device structure with light condensation and visual angle inclination functions, which comprises an OLED, a flat layer and CG glass which are sequentially distributed from bottom to top, the flat layer is connected with the OLED in an attached manner, a gap is reserved between the CG glass and the flat layer, and the CG glass is arranged between the flat layer and the CG glass. The surfaces of the two sides of the CG glass are etched to form a first microstructure which is in a bent shape so as to realize a light condensation function and a second microstructure which is in an inclined wave shape so as to realize a light-emitting visual angle inclination function, the first microstructure is located on the surface of the lower side of the CG glass, and the second microstructure is located on the surface of the upper side of the CG glass. According to the silicon-based OLED device and the manufacturing method thereof, the microstructure I with a light gathering function and the microstructure II with a light emitting visual angle inclining function are formed on the two side surfaces through etching treatment, so that light gathering and deflection of the silicon-based OLED device are realized, and the defects existing in the use process of the existing silicon-based OLED device are effectively overcome.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon-based OLED devices, and in particular to a silicon-based OLED device structure with light focusing and viewing angle tilting functions. Background Art

[0002] Silicon-based OLED is a rapidly developing technology in the field of display technology in recent years. It has many advantages such as self-luminescence, low power consumption, full solid state, and high color gamut. It has gradually entered the commercial mass production stage, and some high-brightness silicon-based OLED devices are also moving towards the military display industry.

[0003] Limited by military display usage scenarios, some displays have the requirement of tilting the main light-emitting viewing angle. In liquid crystal display devices, this requirement can be met by installing a viewing angle deflection film in the optical film. However, compared with silicon-based OLED devices, liquid crystal display devices have the disadvantages of high power consumption and being difficult to be thin and light. It is urgent to make silicon-based OLED meet the military display usage scenario of tilting the main light-emitting viewing angle. Summary of the invention

[0004] In order to solve the above technical problems, the present invention proposes a silicon-based OLED device structure with light focusing and viewing angle tilting functions.

[0005] The technical problem to be solved by the present invention is achieved by adopting the following technical solutions:

[0006] A silicon-based OLED device structure with focusing and viewing angle tilting functions, comprising an OLED, a flat layer and CG glass distributed in sequence from bottom to top, the flat layer being bonded to the OLED, a gap being provided between the CG glass and the flat layer, both side surfaces of the CG glass being etched to form a microstructure 1 which is bent to achieve a focusing function and a microstructure 2 which is obliquely wavy to achieve a light-emitting viewing angle tilting function, the microstructure 1 being located on the lower surface of the CG glass, and the microstructure 2 being located on the upper surface of the CG glass.

[0007] As a further improvement of the present invention, a frame glue is arranged around the flat layer, the CG glass is fixed on the flat layer by the frame glue, and an air layer is formed between the flat layer and the CG glass.

[0008] As a further improvement of the present invention, the first microstructure is an isosceles triangle structure.

[0009] As a further improvement of the present invention, the length and width of the microstructure 1 are consistent with the pixel size of the OLED, which is 14 μm*14 μm, and the height is 11 μm.

[0010] As a further improvement of the present invention, the second microstructure is an elliptical structure inclined at 15° relative to the normal direction.

[0011] As a further improvement of the present invention, the length and width of the microstructure 2 are consistent with the pixel size of the OLED, which is 14 μm*14 μm, and the height is 11 μm.

[0012] The beneficial effects of the present invention are:

[0013] The present invention provides a silicon-based OLED device structure with light-gathering and viewing angle tilting functions. By using a microstructure one with a light-gathering function and a microstructure two with a light-emitting viewing angle tilting function formed on two sides after etching, the silicon-based OLED device can gather and deflect light, effectively solving the defects existing in the use of existing silicon-based OLED devices; and it can be obtained by only adding an etching process to the currently known silicon-based OLED device manufacturing process, without significantly increasing the cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present invention is further described below in conjunction with the accompanying drawings and embodiments:

[0015] Figure 1 It is a schematic diagram of the cross-sectional structure of the present invention;

[0016] Figure 2 It is a schematic diagram of the local structure of CG glass in the present invention;

[0017] Figure 3 This is a schematic diagram of the light focusing and light deflection functions in the present invention;

[0018] In the figure: 1. OLED; 2. Flat layer; 3. Frame glue; 4. Air layer; 5. CG glass; 6. Microstructure 1; 7. Microstructure 2; 8. Light 1; 9. Light 2; 10. Light 3. DETAILED DESCRIPTION

[0019] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further described below with reference to the accompanying drawings and embodiments.

[0020] like Figure 1 and Figure 2 As shown, a silicon-based OLED device structure with focusing and viewing angle tilting functions includes an OLED 1, a flat layer 2, and a CG glass 5 which are sequentially distributed from bottom to top, wherein the flat layer 2 is bonded to the OLED 1, and there is a gap between the CG glass 5 and the flat layer 2. In this embodiment, a frame glue 3 is arranged around the flat layer 2, and the CG glass 5 is fixed on the flat layer 2 by the frame glue 3, and an air layer 4 is formed between the flat layer 2 and the CG glass 5.

[0021] Furthermore, the two side surfaces of the CG glass 5 are etched to form a microstructure 1 6 in a bent shape to achieve a light-gathering function and a microstructure 2 7 in an oblique wave shape to achieve a function of tilting the light-emitting angle. The microstructure 1 6 is located on the lower surface of the CG glass 5, and the microstructure 2 7 is located on the upper surface of the CG glass 5. The microstructure 1 6 and the microstructure 2 7 are micrometer-level. The microstructure 1 6 can improve the brightness of the silicon-based OLED device through the light-gathering function; the microstructure 2 7 can deflect the light gathered by the microstructure 1 6 through the function of tilting the light-emitting angle, thereby changing the main light-emitting angle of the OLED device.

[0022] Specifically, the microstructure 1 6 is an isosceles triangle structure. The microstructure 2 7 is an elliptical structure tilted 15° relative to the normal direction, and this angle comprehensively considers the refractive index of RGB pixels at different wavelengths in the same medium. The length and width of the microstructure 1 6 and the microstructure 2 7 are consistent with the pixel size of the OLED 1, both of which are 14μm*14μm, avoiding crosstalk between light of different wavelengths; the height of the microstructure 1 6 and the microstructure 2 7 are both 11μm.

[0023] The working principle and use process of the present invention:

[0024] When using, Figure 3 As shown, OLED 1 emits light 8, which passes through flat layer 2 and air layer 4 and enters the lower surface of CG glass 5. Microstructure 6 on this surface can gather light 8, enhance the brightness of the main light-emitting viewing angle of the device within a certain range, and output light 9. Light 9 passes through CG glass 5 and is emitted from the upper surface of CG glass 5. Microstructure 27 on this surface can deflect light 9 by about 25°, and the deflection direction is consistent with the tilt direction of microstructure 27, and output light 10. At the same time, the special structure of CG glass 5 covers the entire light-emitting area, which can brighten and deflect the light in the entire light-emitting area, realize the shift of the main light-emitting viewing angle, and meet the use requirements of military display with tilted main light-emitting viewing angle.

[0025] In addition, the shape of the microstructure on the CG glass 5 can be matched according to the pixel size of the OLED 1, and the inclination angle of the microstructure 7 on the CG glass 5 can be designed with different inclination angles according to the requirements of the viewing angle deflection in the usage scenario.

[0026] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions only describe the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A silicon-based OLED device structure with light focusing and viewing angle tilting functions, characterized in that: The invention comprises an OLED (1), a flat layer (2) and a CG glass (5) which are sequentially arranged from bottom to top, wherein the flat layer (2) is bonded to the OLED (1), and there is a gap between the CG glass (5) and the flat layer (2). The two side surfaces of the CG glass (5) are formed by etching with a microstructure 1 (6) which is bent to achieve a light-gathering function and a microstructure 2 (7) which is obliquely wavy to achieve a function of tilting the light-emitting viewing angle. The microstructure 1 (6) is located on the lower surface of the CG glass (5), and the microstructure 2 (7) is located on the upper surface of the CG glass (5).

2. The silicon-based OLED device structure with light focusing and viewing angle tilting functions according to claim 1, characterized in that: The flat layer (2) is provided with a frame glue (3) around its periphery, the CG glass (5) is fixed on the flat layer (2) by the frame glue (3), and an air layer (4) is formed between the flat layer (2) and the CG glass (5).

3. The silicon-based OLED device structure with light focusing and viewing angle tilting functions according to claim 1, characterized in that: The microstructure one (6) is an isosceles triangle structure.

4. The silicon-based OLED device structure with light focusing and viewing angle tilting functions according to claim 1, characterized in that: The length and width of the microstructure 1 (6) are consistent with the pixel size of the OLED (1), which is 14 μm*14 μm, and the height is 11 μm.

5. The silicon-based OLED device structure with light focusing and viewing angle tilting functions according to claim 1, characterized in that: The microstructure 2 (7) is an elliptical structure inclined at 15° relative to the normal direction.

6. The silicon-based OLED device structure with light focusing and viewing angle tilting functions according to claim 1, characterized in that: The length and width of the microstructure 2 (7) are consistent with the pixel size of the OLED (1), which is 14 μm*14 μm, and the height is 11 μm.

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