A surface processing technology for diodes

Abstract

The present invention relates to the field of diode technology, and more particularly to a surface processing process for diodes. Multiple diodes are pre-processed to form a group to be polished, and the polishing pressure is dynamically adjusted by detecting surface roughness. The polished diode group is then cleaned with plasma, and the surface cleanliness is assessed using optical irradiation. The cleaned diode group is then subjected to a secondary surface roughness test to screen for batches that meet passivation standards. During the passivation process, the crack area and width of the passivation layer are simultaneously monitored, and the passivation plasma power is adjusted based on the actual crack evaluation value. This process utilizes closed-loop control: pressure control dynamically matching the surface state during the polishing phase, and optimization of the synergistic effect of the cleaning plasma power and inter-electrode spacing during the cleaning phase. The present invention ensures the cleanliness of the diodes to be passivated by adjusting the polishing pressure, cleaning plasma power, and cleaning spacing, and ensures that the passivation layer thickness meets passivation requirements by adjusting the passivation plasma power.

Description

Technical Field

[0001] The present invention relates to the technical field of diodes, and in particular to a surface processing technology for diodes. Background Art

[0002] A diode is an electronic device made of semiconductor materials (silicon, selenium, germanium, etc.). It has unidirectional conductivity, that is, when a forward voltage is applied to the anode and cathode of the diode, the diode is on. When a reverse voltage is applied to the anode and cathode, the diode is off. Therefore, the conduction and cutoff of the diode are equivalent to the on and off of a switch. Currently, when processing the passivation layer on the surface of the diode, there are many problems that may occur during processing: improper process parameter settings, resulting in excessive corrosion or insufficient formation of the passivation layer; deviations in the control of the passivation solution concentration, temperature or time, causing the film layer to be too thin or too thick; poor etching gas ratio, resulting in insufficient selectivity between the passivation layer and the substrate material; impurities in the passivation solution (such as excessive chloride ions) or the surface oxide layer not being removed, causing localized corrosion; and insufficient plasma resistance of the passivation layer material, resulting in microcracks during the etching process.

[0003] Chinese Patent Publication No. CN116313784A discloses a diode processing method and a diode, the method comprising: obtaining a base layer, the base layer comprising a stacked substrate layer, an epitaxial transition layer, and an epitaxial layer; forming a plurality of grooves on a forming surface of the epitaxial layer, the forming surface of the epitaxial layer being a surface facing away from the epitaxial transition layer; forming an anode layer on the forming surface; forming a first metal layer on the anode layer, and forming a second metal layer on a surface of the substrate layer facing away from the epitaxial transition layer.

[0004] It can be seen that the existing technology has the following problems: during the diode surface processing, there is a lack of ensuring the cleanliness of the diode to be passivated by adjusting the polishing pressure, cleaning plasma power and cleaning spacing, and ensuring that the passivation layer thickness meets the passivation requirements by adjusting the passivation plasma power. Summary of the Invention

[0005] To this end, the present invention provides a surface processing process for diodes to overcome the problems in the prior art of lacking the ability to ensure the cleanliness of the diode to be passivated by adjusting the polishing pressure, cleaning plasma power and cleaning spacing, and lacking the ability to ensure that the thickness of the passivation layer meets the passivation requirements by adjusting the passivation plasma power.

[0006] To achieve the above object, the present invention provides a surface processing process for a diode, comprising the following steps:

[0007] Pre-processing a plurality of diodes to obtain a group of diodes to be polished, detecting a roughness of a pre-processed surface of the group of diodes to be polished, determining a first polishing pressure based on the pre-processed surface roughness, and detecting a roughness of the polished group of diodes to obtain a first roughness;

[0008] Plasma cleaning the polished diode group to obtain a clean diode group, and detecting the surface cleanliness of the clean diode group using optical irradiation to determine whether the surface cleanliness meets processing requirements;

[0009] detecting the roughness of the diode group that meets the cleanliness requirement to obtain a second roughness, obtaining a relative adhesion according to the first roughness and the second roughness, and determining whether the diode to be passivated meets the passivation requirement based on a comparison result of the relative adhesion and the standard adhesion;

[0010] Performing passivation treatment on the diodes that meet the passivation requirements to obtain an actual passivation layer, and detecting crack morphology parameters of the actual passivation layer to determine whether to adjust the passivation plasma power again;

[0011] The crack morphology parameters include crack width and crack area.

[0012] Furthermore, the process of determining the pressure for a single polishing according to the roughness of the pre-treated surface includes:

[0013] Detecting the roughness distribution of the pre-treated surface of the diode group to be polished, calculating an average roughness value, comparing the average roughness value with a standard roughness value range, and determining a first polishing pressure according to the comparison result and the initial polishing pressure;

[0014] The standard roughness value range is determined according to the material of the diode.

[0015] Furthermore, the process of determining a polishing pressure according to the comparison result and the initial polishing pressure includes:

[0016] If the comparison result shows that the average roughness value is within the standard roughness value range, the initial polishing pressure is used as the first polishing pressure;

[0017] If the comparison result shows that the average roughness value is less than the minimum value of the standard roughness value interval, the first polishing pressure is determined according to the difference between the minimum value of the standard roughness value interval and the average roughness value and the initial polishing pressure;

[0018] If the comparison result shows that the average roughness value is greater than the maximum value of the standard roughness value interval, the first polishing pressure is determined according to the difference between the average roughness value and the maximum value of the standard roughness value interval and the initial polishing pressure;

[0019] The initial polishing down force is determined according to the required polishing quality level.

[0020] Furthermore, the process of detecting the surface cleanliness of the cleaning diode group by optical illumination to determine whether the surface cleanliness meets the processing requirements includes:

[0021] adjusting the irradiation area of the optical irradiation instrument according to the area to be irradiated of the diode group, acquiring irradiation data of the irradiation area, generating an irradiation image according to the irradiation data, performing first-level partitioning on the irradiation image to obtain a plurality of first-level partitioned irradiation images, selecting and analyzing the actual shadow degree of any first-level partitioned irradiation image, and determining whether to perform secondary cleaning on the diode corresponding to the selected first-level partitioned irradiation image based on a shadow degree comparison result of the actual shadow degree and a preset standard shadow degree;

[0022] The actual shadow degree is the ratio of the shadow area to the area of the first-level partition illumination image.

[0023] Furthermore, when the actual shadow degree is greater than the standard shadow degree, whether the diode needs to be cleaned for a second time and the cleaning parameters of the second time are determined according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree; when the actual shadow degree is less than or equal to the standard shadow degree, it is determined that the diode does not need to be cleaned for a second time;

[0024] The cleaning parameters include cleaning plasma power and cleaning distance, where the cleaning distance refers to the distance between the cleaning device and the diode.

[0025] Furthermore, the process of determining whether the diode needs to be cleaned for a second time according to the actual difference between the actual shadow level and the standard shadow level and determining the cleaning parameters for the second time cleaning includes:

[0026] If the actual shadow difference is less than the first-class shadow difference, it is determined that secondary cleaning is not required;

[0027] If the actual shadow difference is greater than or equal to the first-order shadow difference and less than the second-order shadow difference, it is determined that the cleaning distance is adjusted to perform a second cleaning on the diode;

[0028] When the actual shadow difference is greater than or equal to the second-level shadow difference, it is determined that the cleaning plasma power is adjusted to perform secondary cleaning on the diode. When the cleaning plasma power is adjusted to the maximum cleaning plasma power, the cleaning distance is adjusted so that the surface cleanliness meets the processing requirements.

[0029] Furthermore, the process of determining whether the passivated diode meets the passivation requirement based on the comparison result between the relative adhesion and the standard adhesion includes:

[0030] The relative adhesion is compared with a preset standard adhesion range to obtain an adhesion comparison result, and whether to perform a passivation operation or adjust the passivation plasma power is determined according to the adhesion comparison result.

[0031] Furthermore, the process of determining whether to perform a passivation operation or adjust the passivation plasma power according to the adhesion comparison result includes:

[0032] If the adhesion comparison result shows that the relative adhesion is within the standard adhesion range, the diode group is passivated;

[0033] If the adhesion comparison result shows that the relative adhesion is less than the minimum value of the standard adhesion range, the passivation plasma power is increased according to the difference between the minimum value of the standard adhesion range and the relative adhesion;

[0034] If the adhesion comparison result shows that the relative adhesion is greater than the maximum value of the standard adhesion range, the passivation plasma power is reduced according to the difference between the maximum value of the standard adhesion range and the relative adhesion.

[0035] Furthermore, the process of passivating the diode that meets the passivation requirements to obtain the actual passivation layer includes:

[0036] detecting a crack area and a crack width of a passivation layer of a diode that meets passivation requirements, determining an actual crack rating value based on the crack area and the crack width of the passivation layer, and determining whether to adjust the passivation plasma power again based on the actual crack rating value;

[0037] The actual crack rating value includes a maintenance crack rating value and a repair crack rating value.

[0038] Furthermore, the process of determining whether to adjust the passivation plasma power again according to the actual crack rating value includes:

[0039] If the actual crack rating value is less than the maintained crack rating value, there is no need to adjust the passivation plasma power again;

[0040] In the case where the actual crack rating value is greater than or equal to the repaired crack rating value, the passivation plasma power is adjusted again according to the difference between the actual crack rating value and the repaired crack rating value.

[0041] Compared with the prior art, the present invention offers the following advantages: by performing parameter testing during the diode surface cleaning and passivation processes, the diode passivation layer can be effectively covered, increasing the diode's service life and performance. By measuring the pre-treatment surface roughness and determining the actual polishing pressure accordingly, the polishing process can be more precisely controlled, reducing over- or under-polishing and improving the surface quality of the diode. Optical illumination is used to detect cleanliness, and secondary cleaning is performed based on the test results to ensure that the diode surface cleanliness meets processing requirements, reducing contamination in subsequent processes. By measuring the surface roughness before passivation, only diodes that meet passivation requirements undergo passivation, thereby improving the quality of the passivation layer and the reliability of the diode. Adjusting the passivation temperature or plasma power based on crack morphology parameters allows for real-time optimization of process parameters, reducing the occurrence of cracks in the passivation layer and improving its integrity. Through closed-loop control and parameter optimization, rework and scrap rates are reduced, improving production efficiency and cost-effectiveness. Through standardized procedures and parameter adjustments, this process produces highly consistent diodes, facilitating large-scale production.

[0042] Furthermore, by detecting the roughness value of the diode group to be polished, removing abnormal areas and calculating the average roughness value of the roughness values of the remaining areas, the actual roughness value of the diode group to be polished can be estimated without detecting the roughness of each diode, thereby increasing the surface processing efficiency of the diode. For the case where the comparison result shows that the average roughness value is within the standard roughness value range, the initial polishing pressure is used as the actual polishing pressure, and the roughness of the diode surface can be polished without adjusting the initial polishing pressure, thereby saving time and increasing processing efficiency. For the case where the comparison result shows that the average roughness value is less than the minimum value of the standard roughness value range, the reduced actual polishing pressure is determined based on the product of the initial polishing pressure and 1 minus the difference between the minimum value of the standard roughness value range and the average roughness value divided by the minimum value of the standard roughness value range, thereby ensuring that the diode surface has a certain degree of roughness. The degree provides adhesion for the next processing step, avoiding the reduction of adhesion of the passivation layer to the diode due to the diode surface being too smooth, resulting in its inability to meet long-term use during use; for the case where the comparison result shows that the average roughness value is greater than the maximum value of the standard roughness value interval, the actual polishing pressure after increase is determined according to the initial polishing pressure and the product of 1 plus the difference between the average roughness value and the maximum value of the standard roughness value interval divided by the maximum value of the standard roughness value interval, which can ensure that the diode surface is suitable for passivation operation, extend the service life of the diode, and avoid the peak-valley structure on the rough surface of the diode due to the roughness value being too high, resulting in the passivation material (such as SiO2, Si3N4) not being evenly covered, the concave area may not be covered, the exposed silicon or metal is susceptible to environmental corrosion (such as oxidation, ion pollution), the passivation layer at the peak is too thin, and micropores are formed, which reduces the insulation and moisture resistance.

[0043] Furthermore, high-resolution images combined with grayscale processing can accurately identify tiny pollutants and improve detection sensitivity. Zoning analysis avoids overall misjudgment and only cleans areas where pollution exceeds the standard, reducing unnecessary processing. The irradiation area is adaptively adjusted and is suitable for diode groups of different sizes, which improves detection flexibility. Using a laser scanner to illuminate the diode group to determine the actual shadow degree can more quickly and intuitively detect the diode group corresponding to the first-level partition irradiation image that does not meet the standard shadow degree, making effective detection for subsequent adjustment of cleaning parameters, avoiding the formation of conductive channels due to surface contamination of the diode group due to insufficient cleanliness, causing leakage current, and reducing the insulation performance of the diode. Setting the actual shadow degree as the ratio of the shadow area to the area of the first-level partition irradiation image can analyze each partition irradiation image to see whether its corresponding diode group meets the cleaning requirements, thereby more comprehensively and meticulously detecting the diode group and ensuring the processing quality of its surface.

[0044] Furthermore, when the actual shadow degree is greater than the standard shadow degree, it is determined whether the diode needs to be cleaned a second time and the cleaning parameters of the secondary cleaning are determined based on the actual difference between the actual shadow degree and the standard shadow degree. The cleaning intensity can be dynamically adjusted according to the degree of contamination on the diode surface to avoid excessive cleaning that damages the diode or insufficient cleaning that affects the passivation operation in the next step, resulting in reduced diode performance. When the actual shadow degree is less than or equal to the standard shadow degree, it is determined that the diode does not need to be cleaned a second time, which can ensure that when the contamination level is low, the surface of the diode group is not cleaned, thereby reducing cleaning time and improving cleaning efficiency.

[0045] Furthermore, based on the comparison results between the actual shadow difference and the preset first-class shadow difference and second-class shadow difference, the diode surface cleanliness is optimized in more detail, dynamic hierarchical control of the cleaning strategy is realized, and the degree of contamination can be quickly identified. When the actual shadow difference is less than the first-class shadow difference, it is determined that no secondary cleaning is required. In this case, there is no need to clean the diode surface, saving cleaning time, improving cleaning efficiency, and avoiding excessive processing; when the actual shadow difference is greater than or equal to the second-class shadow difference, it is determined that the cleaning plasma power is adjusted to perform secondary cleaning on the diode. If the cleaning plasma power still does not meet the cleaning requirements after being adjusted to the maximum cleaning plasma power, the adjusted three-time cleaning spacing is determined according to the difference between the actual shadow after cleaning and the standard shadow and the initial cleaning spacing, wherein the three-time cleaning spacing is negatively correlated with the difference between the actual shadow after cleaning and the standard shadow. In this way, the cleaning spacing can be adjusted according to the degree of contamination on the diode surface. The higher the degree of contamination, the shorter the cleaning spacing, effectively removing pollutants on the diode surface and ensuring smooth diode surface passivation operation. For the case where the actual shadow degree difference is greater than or equal to the second-class shadow degree difference, it is determined that the cleaning plasma power is adjusted to perform a second cleaning of the diode. If the cleaning plasma power still does not meet the cleaning requirements after being adjusted to the maximum cleaning plasma power, the adjusted three-time cleaning interval is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning interval, wherein the three-time cleaning interval is negatively correlated with the difference between the actual shadow degree after cleaning and the standard shadow degree, and the negative correlation ratio of the three-time cleaning interval and the difference between the actual shadow degree after cleaning and the standard shadow degree is determined by a preset proportional influence compensation parameter. When there are too many pollutants on the diode surface, first adjust the cleaning power to observe whether the pollutants can be removed. If the pollutants cannot be removed, the adjusted three-time cleaning interval is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning interval, that is, shorten the cleaning interval to completely remove stubborn pollution.

[0046] Furthermore, by measuring the change in roughness before and after cleaning the diode surface (i.e., the difference between the first and second roughness values), the relative adhesion is calculated and compared with the standard adhesion range. The passivation plasma power is dynamically adjusted to ensure the quality of the passivation layer. The roughness difference reflects the amount of residual surface contaminants (the greater the unevenness, the more contaminants), and the relative adhesion is positively correlated with the amount of residual contaminants (the more contaminants, the worse the adhesion). By quantifying adhesion through the roughness difference, the processing process can be optimized and processing efficiency improved. The plasma power is automatically adjusted to improve the uniformity and reliability of the passivation layer. If the adhesion comparison result shows that the relative adhesion is less than the minimum value of the standard adhesion range, the increased passivation plasma power is determined based on the product of the initial passivation plasma power and 1 plus the difference between the minimum value of the standard adhesion range and the relative adhesion, divided by the minimum value of the standard adhesion range. If the adhesion comparison result shows that the relative adhesion is greater than the maximum value of the standard adhesion range, the reduced passivation plasma power is determined based on the product of the initial passivation plasma power and 1 minus the difference between the maximum value of the standard adhesion range and the relative adhesion, divided by the maximum value of the standard adhesion range. This can prevent failures caused by insufficient adhesion (easy peeling) or excessive adhesion (stress cracking).

[0047] Furthermore, the passivation layer crack area and crack width of diodes that meet passivation requirements are detected, and an actual crack rating value is determined based on the passivation layer crack area and crack width. The actual crack rating value is used to determine whether to adjust the passivation plasma power again. The actual crack rating value includes a maintenance crack rating value and a repair crack rating value. The actual crack rating value can be used to avoid subjective judgment and ensure the reliability of the passivation layer. If the actual crack rating value is greater than or equal to the repair crack rating value, the passivation plasma power is increased based on the difference between the actual crack rating value and the repair crack rating value. Maximum crack area and maximum crack width values are set. When both the crack area and crack width are greater than corresponding thresholds, the diode is determined to be defective. The power adjustment can be set proportional to the crack severity to avoid over- or under-processing. Fixed power can lead to incomplete repairs or material damage; timely removal of defective products reduces ineffective repair costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 is a flow chart of the surface processing process for diodes in this embodiment;

[0049] Figure 2 This is a flow chart of a pre-processing process for a plurality of diodes in the surface processing technology for diodes in this embodiment;

[0050] Figure 3 This is a process flow chart for adjusting the polishing pressure in the surface processing process for diodes in this embodiment;

[0051] Figure 4 This is a process flow chart for adjusting the passivation plasma power in the surface processing process for diodes in this embodiment. DETAILED DESCRIPTION

[0052] In order to make the objects and advantages of the present invention more clearly understood, the present invention is further described below in conjunction with embodiments; it should be understood that the specific embodiments described herein are merely used to explain the present invention and are not intended to limit the present invention.

[0053] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the scope of protection of the present invention.

[0054] It should be noted that, in the description of the present invention, terms such as "up", "down", "left", "right", "inside", and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. This is only for the convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it cannot be understood as a limitation on the present invention.

[0055] Furthermore, it should be noted that, in the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0056] See also Figures 1-4 As shown, Figure 1 is a flow chart of the surface processing process for diodes in this embodiment; Figure 2 This is a flow chart of a pre-processing process for a plurality of diodes in the surface processing technology for diodes in this embodiment; Figure 3 This is a process flow chart for adjusting the polishing pressure in the surface processing process for diodes in this embodiment; Figure 4 This is a process flow chart for adjusting the passivation plasma power in the surface processing process for diodes in this embodiment.

[0057] This embodiment provides a surface processing process for a diode, comprising the following steps:

[0058] Step S1, pre-processing a plurality of diodes to obtain a group of diodes to be polished, detecting the roughness of the pre-processed surface of the group of diodes to be polished, determining a first polishing pressure based on the pre-processed surface roughness, and detecting the roughness of the polished group of diodes to obtain a first roughness;

[0059] Step S2, plasma cleaning the polished diode group to obtain a clean diode group, and detecting the surface cleanliness of the clean diode group using optical illumination to determine whether the surface cleanliness meets the processing requirements;

[0060] Step S3, detecting the roughness of the diode group that meets the cleanliness requirement to obtain a second roughness, obtaining a relative adhesion according to the first roughness and the second roughness, and determining whether the diode to be passivated meets the passivation requirement based on a comparison result of the relative adhesion and the standard adhesion;

[0061] Step S4, performing passivation treatment on the diodes that meet the passivation requirements to obtain an actual passivation layer, and detecting crack morphology parameters of the actual passivation layer to determine whether to adjust the passivation plasma power again;

[0062] The crack morphology parameters include crack width and crack area.

[0063] In step S1, this embodiment provides a step of pre-processing a plurality of diodes, including:

[0064] Step S11: Classify the purchased or produced diodes by material, specification, batch, etc., and select diodes with good appearance and no obvious defects as objects to be processed;

[0065] Step S12: Use deionized water or a special cleaning agent to perform a preliminary cleaning on the diode to remove dust, oil and other impurities on the surface. After cleaning, blow dry the diode with nitrogen or dry air to ensure that the surface is dry and free of residue.

[0066] Step S13: Perform a visual inspection on the cleaned diodes, record any visible defects or damage, and mark the diodes that meet the requirements for subsequent tracking and processing;

[0067] In step S14, the surface of the diode is lightly ground or sanded to remove tiny bumps and unevenness on the surface. According to the material and specifications of the diode, appropriate polishing tools and polishing liquid are selected, and the parameters of the polishing equipment, such as rotation speed and polishing time, are adjusted to meet the needs of different diodes. The roughness of the polished diode group is detected to obtain the first roughness.

[0068] By testing parameters during the diode surface cleaning and passivation processes, the diode passivation layer can be effectively covered, extending the diode's service life and performance. By measuring the pre-treatment surface roughness and using this information to determine the actual polishing pressure, the polishing process can be more precisely controlled, reducing over- and under-polishing, and improving the surface quality of the diode. Using optical illumination to inspect cleanliness and performing secondary cleaning based on the test results ensures that the diode surface cleanliness meets processing requirements, reducing contamination in subsequent processes. By testing the surface roughness before passivation, only diodes that meet passivation requirements are passivated, thereby improving the quality of the passivation layer and diode reliability. Adjusting the passivation temperature or plasma power based on crack morphology parameters allows for real-time optimization of process parameters, reducing cracks in the passivation layer and improving its integrity. Closed-loop control and parameter optimization reduce rework and scrap, improving production efficiency and cost-effectiveness. This process, through standardized procedures and parameter adjustments, produces highly consistent diodes, facilitating large-scale production.

[0069] Specifically, the process of determining the pressure of a polishing according to the roughness of the pre-treated surface includes:

[0070] Detecting the roughness distribution of the pre-treated surface of the diode group to be polished, calculating an average roughness value, comparing the average roughness value with a standard roughness value range, and determining a first polishing pressure according to the comparison result and the initial polishing pressure;

[0071] The standard roughness value range is determined according to the material of the diode.

[0072] Specifically, the process of determining a polishing pressure according to the comparison result and the initial polishing pressure includes:

[0073] If the comparison result shows that the average roughness value is within the standard roughness value range, the initial polishing pressure is used as the first polishing pressure;

[0074] If the comparison result shows that the average roughness value is less than the minimum value of the standard roughness value interval, the first polishing pressure is determined according to the difference between the minimum value of the standard roughness value interval and the average roughness value and the initial polishing pressure;

[0075] If the comparison result shows that the average roughness value is greater than the maximum value of the standard roughness value interval, the first polishing pressure is determined according to the difference between the average roughness value and the maximum value of the standard roughness value interval and the initial polishing pressure;

[0076] The initial polishing down force is determined according to the required polishing quality level.

[0077] In this embodiment, a roughness detector (such as a contact or optical type) is used to scan the surface of the diode group to be polished, generate a surface roughness distribution map, identify local abnormal areas (such as scratches and protrusions), remove the abnormal areas in the distribution map, and calculate the average roughness value of the roughness values of the remaining areas.

[0078] Obtain multi-point roughness data (such as Ra, Rz and other parameters),

[0079] The arithmetic mean (e.g., average Ra value) of the roughness values of all test points is taken to represent the overall surface condition. The allowable roughness value range is pre-set according to the diode material (e.g., silicon, metal pins, glass package) (e.g., silicon wafer Ra 0.2-0.4μm, metal Ra 0.5-1.0μm).

[0080] If the comparison result shows that the average roughness value is within the standard roughness value range, the initial polishing pressure is used as the first polishing pressure;

[0081] If the comparison result shows that the average roughness value is less than the minimum value of the standard roughness value interval, the reduced polishing pressure is determined based on the initial polishing pressure and the product of 1 minus the difference between the minimum value of the standard roughness value interval and the average roughness value divided by the minimum value of the standard roughness value interval;

[0082] If the comparison result shows that the average roughness value is greater than the maximum value of the standard roughness value interval, the increased polishing pressure is determined based on the initial polishing pressure and the product of 1 plus the difference between the average roughness value and the maximum value of the standard roughness value interval divided by the maximum value of the standard roughness value interval;

[0083] The initial polishing pressure is determined according to the polishing quality level. In this embodiment, the polishing quality level can be divided into high-precision polishing quality level (fine polishing), medium-precision polishing quality level (standard polishing), and low-precision polishing quality level (rough polishing). Different levels correspond to different initial pressures.

[0084] For example,

[0085] The high-precision polishing quality level corresponds to an initial downward pressure of 40N.

[0086] The medium precision polishing quality level corresponds to an initial downward pressure of 60N.

[0087] The low-precision polishing quality level corresponds to an initial downward pressure of 100N.

[0088] This embodiment takes the high-precision polishing quality level as an example to adjust the corresponding initial downforce, and takes the silicon diode that needs high-precision polishing as an example.

[0089] Set the standard roughness value range to [0.2μm, 0.4μm],

[0090] If the actual roughness detected is 0.3, there is no need to adjust the polishing pressure once;

[0091] If the actual roughness detected is 0.15, the reduced polishing pressure is determined to be 40×[1-(0.2-0.15) / 0.2]=30N based on the initial polishing pressure and the product of 1 minus the difference between the minimum value of the standard roughness value interval and the average roughness value divided by the minimum value of the standard roughness value interval;

[0092] If the actual roughness detected is 0.5, the increased polishing pressure is determined to be 40×[1+(0.5-0.4) / 0.5]=48N based on the initial polishing pressure and the product of 1 plus the difference between the average roughness value and the maximum value of the standard roughness value interval divided by the maximum value of the standard roughness value interval.

[0093] By testing the roughness of the diode group to be polished, removing abnormal areas and calculating the average roughness of the roughness of the remaining areas, the actual roughness of the diode group to be polished can be estimated, and the roughness of each diode does not need to be tested, thereby increasing the surface processing efficiency of the diode. For the case where the comparison result shows that the average roughness value is within the standard roughness value interval, the initial polishing pressure is used as the single polishing pressure, and the roughness of the diode surface can be polished without adjusting the initial polishing pressure, thereby saving time and increasing processing efficiency. For the case where the average roughness value is less than the minimum value of the standard roughness value interval, the reduced single polishing pressure is determined according to the product of the initial polishing pressure and 1 minus the difference between the minimum value of the standard roughness value interval and the average roughness value divided by the minimum value of the standard roughness value interval, thereby ensuring that the diode surface has a certain roughness for the next polishing. One processing step provides adhesion to avoid the reduction of adhesion of the passivation layer to the diode due to the diode surface being too smooth, resulting in its inability to meet long-term use during use; for the case where the comparison result is that the average roughness value is greater than the maximum value of the standard roughness value interval, the increased polishing pressure is determined according to the initial polishing pressure and 1 plus the difference between the average roughness value and the maximum value of the standard roughness value interval divided by the product of the maximum value of the standard roughness value interval, which can ensure that the diode surface is suitable for passivation operation, extend the service life of the diode, and avoid the peak-valley structure on the rough surface of the diode due to the roughness value being too high, resulting in the passivation material (such as SiO2, Si3N4) not being evenly covered, the recessed area may not be covered, the exposed silicon or metal is susceptible to environmental erosion (such as oxidation, ion contamination), the passivation layer at the peak is too thin, micropores are formed, and the insulation and moisture-proof properties are reduced.

[0094] Specifically, the process of using optical illumination to detect the surface cleanliness of the cleaning diode group to determine whether the surface cleanliness meets the processing requirements includes:

[0095] adjusting the irradiation area of the optical irradiation instrument according to the area to be irradiated of the diode group, acquiring irradiation data of the irradiation area, generating an irradiation image according to the irradiation data, performing first-level partitioning on the irradiation image to obtain a plurality of first-level partitioned irradiation images, selecting and analyzing the actual shadow degree of any first-level partitioned irradiation image, and determining whether to perform secondary cleaning on the diode corresponding to the selected first-level partitioned irradiation image based on a shadow degree comparison result of the actual shadow degree and a preset standard shadow degree;

[0096] The actual shadow degree is the ratio of the shadow area to the area of the first-level partition illumination image.

[0097] Specifically, when the actual shadow degree is greater than the standard shadow degree, whether the diode needs to be cleaned for a second time and the cleaning parameters of the second cleaning are determined according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree; when the actual shadow degree is less than or equal to the standard shadow degree, it is determined that the diode does not need to be cleaned for a second time;

[0098] The cleaning parameters include cleaning plasma power and cleaning distance, where the cleaning distance refers to the distance between the cleaning device and the diode.

[0099] Specifically, the process of determining whether the diode needs to be cleaned for a second time according to the actual difference between the actual shadow level and the standard shadow level and determining the cleaning parameters for the second time cleaning includes:

[0100] If the actual shadow difference is less than the first-class shadow difference, it is determined that secondary cleaning is not required;

[0101] If the actual shadow difference is greater than or equal to the first-order shadow difference and less than the second-order shadow difference, it is determined that the cleaning distance is adjusted to perform a second cleaning on the diode;

[0102] When the actual shadow difference is greater than or equal to the second-level shadow difference, it is determined that the cleaning plasma power is adjusted to perform secondary cleaning on the diode. When the cleaning plasma power is adjusted to the maximum cleaning plasma power, the cleaning distance is adjusted so that the surface cleanliness meets the processing requirements.

[0103] Adjust the irradiation area of the optical irradiator (such as a laser scanner) according to the size of the diode group. The irradiation area of the optical irradiator must be larger than or equal to the area to be irradiated by the diode group to ensure full coverage. Obtain a high-resolution irradiation image (such as 5000×5000 pixels) and grayscale it to enhance shadow contrast.

[0104] The illumination image is divided into multiple first-level partitions (e.g., 5×5 grids), and the actual shadow degree of each first-level partition illumination image is calculated, where the actual shadow degree is the ratio of the shadow area to the area of the first-level partition illumination image.

[0105] If the actual shadow degree is greater than the standard shadow degree, determining whether the diode needs to be cleaned a second time and determining cleaning parameters for the second time according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree;

[0106] If the actual shadow difference is less than the first-class shadow difference, it is determined that secondary cleaning is not required;

[0107] For a case where the actual shadow degree difference is greater than or equal to the first-class shadow degree difference and less than the second-class shadow degree difference, a secondary cleaning distance after adjustment of the initial cleaning distance is determined according to the initial cleaning distance and the difference between the second-class shadow degree difference and the actual shadow degree difference, wherein the secondary cleaning distance is negatively correlated with the difference between the second-class shadow degree difference and the actual shadow degree difference, and the negative correlation ratio of the secondary cleaning distance and the difference between the second-class shadow degree difference and the actual shadow degree difference is determined by a preset proportional influence compensation parameter;

[0108] Among them, the initial cleaning distance is determined based on the historical data of cleaning distance.

[0109] For the case where the actual shadow degree difference is greater than or equal to the second-class shadow degree difference, it is determined that the cleaning plasma power is adjusted to perform secondary cleaning on the diode. If the cleaning plasma power still does not meet the cleaning requirements after being adjusted to the maximum cleaning plasma power, the adjusted three-time cleaning spacing is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning spacing, wherein the three-time cleaning spacing is negatively correlated with the difference between the actual shadow degree after cleaning and the standard shadow degree, and the negative correlation ratio between the three-time cleaning spacing and the difference between the actual shadow degree after cleaning and the standard shadow degree is determined by a preset proportional influence compensation parameter;

[0110] In this embodiment, the standard shadow degree is set to 10%, the first-level shadow degree difference is 5%, the second-level shadow degree difference is 8%, and the initial cleaning distance is 2mm.

[0111] When the actual shadow degree is 9%, it is determined that the diode does not need to be cleaned again.

[0112] When the actual shadow degree is 12%, whether the diode needs to be cleaned again and the cleaning parameters of the second cleaning are determined according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree. If the actual shadow degree difference is 2% and is less than the first-class shadow degree difference of 5%, it is determined that no second cleaning is required.

[0113] When the actual shadow degree is 16%, the secondary cleaning distance after the initial cleaning distance adjustment is determined according to the difference between the initial cleaning distance and the second-class shadow degree difference and the actual shadow degree difference. The actual shadow degree difference is 6%, which is greater than or equal to the first-class shadow degree difference and less than the second-class shadow degree difference. The negative correlation ratio of the difference between the secondary cleaning distance and the second-class shadow degree difference and the actual shadow degree difference is set to 0.15. The adjusted secondary cleaning distance is 2-0.15×(8-6)=1.7mm;

[0114] When the actual shadow degree is 20%, the cleaning plasma power is adjusted to perform a secondary cleaning on the diode. If the cleaning plasma power is adjusted to the maximum cleaning plasma power (such as adjusting the power to 200W-300W) and still does not meet the cleaning requirements, the adjusted three-time cleaning spacing is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning spacing. The compensation parameter for the negative correlation ratio between the three-time cleaning spacing and the difference between the actual shadow degree after cleaning and the standard shadow degree is set to 0.12;

[0115] At this time, the actual shadow degree after cleaning is 18%, so the spacing between the three cleanings is 2-0.12×(18-10)=1.04mm.

[0116] Set a maximum number of cleaning cycles. If the cleaning requirement is still not met after three cycles, an alarm will be triggered for the diode corresponding to the first-level partition image, and the surface will be reprocessed. The corresponding proportional impact compensation parameters can be optimized based on each cleaning result to achieve more precise cleaning of the diode.

[0117] High-resolution images combined with grayscale processing can accurately identify tiny pollutants and improve detection sensitivity. Zoning analysis avoids overall misjudgment and only cleans areas where pollution exceeds the standard, reducing unnecessary processing. The irradiation area is adaptively adjusted and is suitable for diode groups of different sizes, improving detection flexibility. Using a laser scanner to illuminate the diode group to determine the actual shadow degree can more quickly and intuitively detect the diode group corresponding to the first-level partition irradiation image that does not meet the standard shadow degree, making effective detection for subsequent adjustment of cleaning parameters, and avoiding the formation of conductive channels due to surface contamination of the diode group due to insufficient cleanliness, causing leakage current, and reducing the insulation performance of the diode. Setting the actual shadow degree as the ratio of the shadow area to the area of the first-level partition irradiation image can analyze each partition irradiation image to determine whether its corresponding diode group meets the cleaning requirements, thereby more comprehensively and meticulously detecting the diode group and ensuring the processing quality of its surface.

[0118] When the actual shadow degree is greater than the standard shadow degree, it is determined whether the diode needs to be cleaned for the second time and the cleaning parameters of the second cleaning are determined based on the actual difference between the actual shadow degree and the standard shadow degree. The cleaning intensity can be dynamically adjusted according to the degree of contamination on the diode surface to avoid excessive cleaning that damages the diode or insufficient cleaning that affects the passivation operation in the next step, resulting in reduced diode performance. When the actual shadow degree is less than or equal to the standard shadow degree, it is determined that the diode does not need to be cleaned for the second time, which can ensure that when the contamination level is low, the surface of the diode group is not cleaned, thereby reducing cleaning time and improving cleaning efficiency.

[0119] Based on the comparison results of the actual shadow difference and the preset first-class shadow difference and second-class shadow difference, the diode surface cleanliness is optimized in more detail, dynamic hierarchical control of the cleaning strategy is realized, and the degree of contamination can be quickly identified. When the actual shadow difference is less than the first-class shadow difference, it is determined that no secondary cleaning is required. In this case, there is no need to clean the diode surface, saving cleaning time, improving cleaning efficiency, and avoiding excessive processing; when the actual shadow difference is greater than or equal to the second-class shadow difference, it is determined that the cleaning plasma power is adjusted to perform secondary cleaning on the diode. If the cleaning plasma power is adjusted to the maximum cleaning plasma power and still does not meet the cleaning requirements, the adjusted three-time cleaning spacing is determined according to the difference between the actual shadow after cleaning and the standard shadow and the initial cleaning spacing. Among them, the three-time cleaning spacing is negatively correlated with the difference between the actual shadow after cleaning and the standard shadow. In this way, the cleaning spacing can be adjusted according to the degree of contamination on the diode surface. The higher the degree of contamination, the shorter the cleaning spacing, effectively removing pollutants on the diode surface and ensuring the smooth progress of the diode surface passivation operation. For the case where the actual shadow degree difference is greater than or equal to the second-class shadow degree difference, it is determined that the cleaning plasma power is adjusted to perform a second cleaning of the diode. If the cleaning plasma power still does not meet the cleaning requirements after being adjusted to the maximum cleaning plasma power, the adjusted three-time cleaning interval is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning interval, wherein the three-time cleaning interval is negatively correlated with the difference between the actual shadow degree after cleaning and the standard shadow degree, and the negative correlation ratio of the three-time cleaning interval and the difference between the actual shadow degree after cleaning and the standard shadow degree is determined by a preset proportional influence compensation parameter. When there are too many pollutants on the diode surface, first adjust the cleaning power to observe whether the pollutants can be removed. If the pollutants cannot be removed, the adjusted three-time cleaning interval is determined according to the difference between the actual shadow degree after cleaning and the standard shadow degree and the initial cleaning interval, that is, shorten the cleaning interval to completely remove stubborn pollution.

[0120] Specifically, the process of determining whether the passivated diode meets the passivation requirement based on the comparison result between the relative adhesion and the standard adhesion includes:

[0121] The relative adhesion is compared with a preset standard adhesion range to obtain an adhesion comparison result, and whether to perform a passivation operation or adjust the passivation plasma power is determined according to the adhesion comparison result.

[0122] Specifically, the process of determining whether to perform a passivation operation or adjust the passivation plasma power according to the adhesion comparison result includes:

[0123] If the adhesion comparison result shows that the relative adhesion is within the standard adhesion range, the diode group is passivated;

[0124] If the adhesion comparison result shows that the relative adhesion is less than the minimum value of the standard adhesion range, the passivation plasma power is increased according to the difference between the minimum value of the standard adhesion range and the relative adhesion;

[0125] If the adhesion comparison result shows that the relative adhesion is greater than the maximum value of the standard adhesion range, the passivation plasma power is reduced according to the difference between the maximum value of the standard adhesion range and the relative adhesion.

[0126] The relative adhesion is determined based on the difference between the first roughness and the second roughness and the compensation parameter for the influence of the difference between the first roughness and the second roughness on the adhesion, wherein the relative adhesion is positively correlated with the difference between the first roughness and the second roughness, and the positive correlation ratio between the relative adhesion and the difference between the first roughness and the second roughness is determined by a preset proportional influence compensation parameter; since the difference between the first roughness and the second roughness of the diode surface before and after cleaning can reflect the degree of surface unevenness, if the degree of surface unevenness of the diode is large, the amount of contaminants on the diode surface is large, and therefore the difference between the first roughness and the second roughness can reflect the adhesion of the diode surface,

[0127] In this embodiment, the first roughness is detected to be 1.2 μm and the second roughness is detected to be 0.8 μm. The positive correlation ratio between the relative adhesion and the difference between the first roughness and the second roughness is set to 100, and the relative adhesion is 100×(1.2-0.8)=40N.

[0128] If the adhesion comparison result shows that the relative adhesion is within the standard adhesion range, the diode group is passivated;

[0129] If the adhesion comparison result shows that the relative adhesion is less than the minimum value of the standard adhesion range, the increased passivation plasma power is determined based on the initial passivation plasma power and the product of 1 plus the difference between the minimum value of the standard adhesion range and the relative adhesion divided by the minimum value of the standard adhesion range;

[0130] If the adhesion comparison result shows that the relative adhesion is greater than the maximum value of the standard adhesion range, the reduced passivation plasma power is determined based on the product of the initial passivation plasma power and 1 minus the difference between the maximum value of the standard adhesion range and the relative adhesion divided by the maximum value of the standard adhesion range;

[0131] Among them, the initial passivation plasma power is determined based on historical experimental data;

[0132] In this embodiment, the initial passivation plasma power is set to 100W, and the standard adhesion range is set to [50,70].

[0133] When the relative adhesion force is 40N, the increased passivation plasma power is 100×[1+(50-40) / 50]=120N.

[0134] When the relative adhesion force is detected to be 85N, the reduced passivation plasma power is 100×[1-(85-70) / 70]=78.57N.

[0135] By measuring the roughness change before and after cleaning the diode surface (i.e., the difference between the first and second roughness values), the relative adhesion is calculated and compared with the standard adhesion range. The passivation plasma power is dynamically adjusted to ensure passivation layer quality. The roughness difference reflects the amount of residual surface contaminants (greater surface roughness indicates more contaminants), and relative adhesion is positively correlated with the amount of residual contaminants (more contaminants indicate poorer adhesion). Quantifying adhesion through roughness difference optimizes the machining process and improves processing efficiency. Automatically adjusting plasma power improves passivation layer uniformity and reliability. If the adhesion comparison result shows that the relative adhesion is less than the minimum value of the standard adhesion range, the increased passivation plasma power is determined based on the product of the initial passivation plasma power and 1 plus the difference between the minimum value of the standard adhesion range and the relative adhesion, divided by the minimum value of the standard adhesion range. If the adhesion comparison result shows that the relative adhesion is greater than the maximum value of the standard adhesion range, the reduced passivation plasma power is determined based on the product of the initial passivation plasma power and 1 minus the difference between the maximum value of the standard adhesion range and the relative adhesion, divided by the maximum value of the standard adhesion range. This can prevent failures caused by insufficient adhesion (easy peeling) or excessive adhesion (stress cracking).

[0136] Specifically, the process of passivating a diode that meets the passivation requirements to obtain an actual passivation layer includes:

[0137] detecting a crack area and a crack width of a passivation layer of a diode that meets passivation requirements, determining an actual crack rating value based on the crack area and the crack width of the passivation layer, and determining whether to adjust the passivation plasma power again based on the actual crack rating value;

[0138] The actual crack rating value includes a maintenance crack rating value and a repair crack rating value.

[0139] Specifically, the process of determining whether to adjust the passivation plasma power again according to the actual crack rating value includes:

[0140] If the actual crack rating value is less than the maintained crack rating value, there is no need to adjust the passivation plasma power again;

[0141] In the case where the actual crack rating value is greater than or equal to the repaired crack rating value, the passivation plasma power is adjusted again according to the difference between the actual crack rating value and the repaired crack rating value.

[0142] The actual crack rating value is determined based on the sum of the crack area, the compensation parameter for the effect of the crack area on the actual crack rating value, and the compensation parameter for the effect of the crack width on the actual crack rating value.

[0143] If the actual crack rating value is less than the maintained crack rating value, there is no need to adjust the passivation plasma power again;

[0144] If the actual crack rating value is greater than or equal to the repaired crack rating value, the passivation plasma power is increased according to the difference between the actual crack rating value and the repaired crack rating value, and the maximum crack area and crack width are set. When the crack area and crack width are both greater than the corresponding thresholds, the diode is judged to be defective.

[0145] In this embodiment, an optical microscope or a scanning electron microscope is used to obtain the crack area and crack width.

[0146] Set the compensation parameter for the effect of crack area on the actual crack rating value to 0.1; the compensation parameter for the effect of crack width on the actual crack rating value to 0.5; maintain the crack rating value at 10

[0147] Detection crack area 50μm 2 , the crack width is 2μm, the actual crack rating value is 0.1×50+0.5×2=5+1=6, and there is no need to adjust the passivation plasma power again;

[0148] Detection crack area 200μm 2 , the crack width is 10μm, the actual crack rating value is 0.1×200+0.5×10=20+5=25, and the increased passivation plasma power is determined based on the compensation parameter of the difference between the actual crack rating value and the repaired crack rating value and the influence of the difference between the actual crack rating value and the repaired crack rating value on the passivation plasma power.

[0149] The compensation parameter for the influence of the difference in repaired crack rating values on the passivation plasma power is set to 10, and the increased passivation plasma power is 10×(25−10)=150.

[0150] The passivation layer crack area and crack width of diodes that meet passivation requirements are detected, and an actual crack rating value is determined based on the passivation layer crack area and crack width. The actual crack rating value is used to determine whether to adjust the passivation plasma power again. The actual crack rating value includes a maintenance crack rating value and a repair crack rating value. The actual crack rating value can be used to avoid subjective judgment and ensure the reliability of the passivation layer. If the actual crack rating value is greater than or equal to the repair crack rating value, the passivation plasma power is increased based on the difference between the actual crack rating value and the repair crack rating value. Maximum crack area and crack width values are set. When both the crack area and crack width exceed corresponding thresholds, the diode is judged as defective. The power adjustment can be set proportional to the crack severity to avoid over- or under-processing. Fixed power can lead to incomplete repairs or material damage; timely removal of defective products reduces ineffective repair costs.

[0151] Thus far, the technical solutions of the present invention have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it will be readily understood by those skilled in the art that the scope of protection of the present invention is obviously not limited to these specific embodiments. Without departing from the principles of the present invention, those skilled in the art may make equivalent changes or substitutions to the relevant technical features, and the technical solutions after such changes or substitutions will fall within the scope of protection of the present invention.

[0152] The foregoing description is merely a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art will readily appreciate that the present invention is susceptible to various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A surface processing process for a diode, characterized in that: The following steps are included: Pre-processing a plurality of diodes to obtain a group of diodes to be polished, detecting a roughness of a pre-processed surface of the group of diodes to be polished, determining a first polishing pressure based on the pre-processed surface roughness, and detecting a roughness of the polished group of diodes to obtain a first roughness; Plasma cleaning the polished diode group to obtain a clean diode group, and detecting the surface cleanliness of the clean diode group using optical irradiation to determine whether the surface cleanliness meets processing requirements; detecting the roughness of the diode group that meets the cleanliness requirement to obtain a second roughness, obtaining a relative adhesion according to the first roughness and the second roughness, and determining whether the diode to be passivated meets the passivation requirement based on a comparison result of the relative adhesion and the standard adhesion; Performing passivation treatment on the diodes that meet the passivation requirements to obtain an actual passivation layer, and detecting crack morphology parameters of the actual passivation layer to determine whether to adjust the passivation plasma power again; The crack morphology parameters include crack width and crack area.

2. The surface processing process for diodes according to claim 1, characterized in that: The process of determining the pressure of a polishing according to the roughness of the pre-treated surface comprises: Detecting the roughness distribution of the pre-treated surface of the diode group to be polished, calculating an average roughness value, comparing the average roughness value with a standard roughness value range, and determining a first polishing pressure according to the comparison result and the initial polishing pressure; The standard roughness value range is determined according to the material of the diode.

3. The surface processing process for diodes according to claim 2, characterized in that: The process of determining a polishing pressure according to the comparison result and the initial polishing pressure includes: If the comparison result shows that the average roughness value is within the standard roughness value range, the initial polishing pressure is used as the first polishing pressure; If the comparison result shows that the average roughness value is less than the minimum value of the standard roughness value interval, the first polishing pressure is determined according to the difference between the minimum value of the standard roughness value interval and the average roughness value and the initial polishing pressure; If the comparison result shows that the average roughness value is greater than the maximum value of the standard roughness value interval, the first polishing pressure is determined according to the difference between the average roughness value and the maximum value of the standard roughness value interval and the initial polishing pressure; The initial polishing down force is determined according to the required polishing quality level.

4. The surface processing process for diodes according to claim 3, characterized in that: The process of detecting the surface cleanliness of the cleaning diode group by optical illumination to determine whether the surface cleanliness meets the processing requirements includes: adjusting the irradiation area of the optical irradiation instrument according to the area to be irradiated of the diode group, acquiring irradiation data of the irradiation area, generating an irradiation image according to the irradiation data, performing first-level partitioning on the irradiation image to obtain a plurality of first-level partitioned irradiation images, selecting and analyzing the actual shadow degree of any first-level partitioned irradiation image, and determining whether to perform secondary cleaning on the diode corresponding to the selected first-level partitioned irradiation image based on a shadow degree comparison result of the actual shadow degree and a preset standard shadow degree; The actual shadow degree is the ratio of the shadow area to the area of the first-level partition illumination image.

5. The surface processing process for diodes according to claim 4, characterized in that: When the actual shadow degree is greater than the standard shadow degree, determining whether the diode needs to be cleaned again and determining the cleaning parameters of the second cleaning according to the actual shadow degree difference between the actual shadow degree and the standard shadow degree; when the actual shadow degree is less than or equal to the standard shadow degree, determining that the diode does not need to be cleaned again; The cleaning parameters include cleaning plasma power and cleaning distance, where the cleaning distance refers to the distance between the cleaning device and the diode.

6. The surface processing process for diodes according to claim 5, characterized in that: The process of determining whether the diode needs to be cleaned for a second time according to the actual difference between the actual shadow level and the standard shadow level and determining the cleaning parameters for the second time cleaning includes: If the actual shadow difference is less than the first-class shadow difference, it is determined that secondary cleaning is not required; If the actual shadow difference is greater than or equal to the first-order shadow difference and less than the second-order shadow difference, it is determined that the cleaning distance is adjusted to perform a second cleaning on the diode; When the actual shadow difference is greater than or equal to the second-level shadow difference, it is determined that the cleaning plasma power is adjusted to perform secondary cleaning on the diode. When the cleaning plasma power is adjusted to the maximum cleaning plasma power, the cleaning distance is adjusted so that the surface cleanliness meets the processing requirements.

7. The surface processing process for diodes according to claim 6, characterized in that: The process of determining whether the passivated diode meets the passivation requirement based on the comparison result between the relative adhesion and the standard adhesion includes: The relative adhesion is compared with a preset standard adhesion range to obtain an adhesion comparison result, and whether to perform a passivation operation or adjust the passivation plasma power is determined according to the adhesion comparison result.

8. The surface processing process for diodes according to claim 7, characterized in that: The process of determining whether to perform a passivation operation or adjust the passivation plasma power according to the adhesion comparison result includes: If the adhesion comparison result shows that the relative adhesion is within the standard adhesion range, the diode group is passivated; If the adhesion comparison result shows that the relative adhesion is less than the minimum value of the standard adhesion range, the passivation plasma power is increased according to the difference between the minimum value of the standard adhesion range and the relative adhesion; If the adhesion comparison result shows that the relative adhesion is greater than the maximum value of the standard adhesion range, the passivation plasma power is reduced according to the difference between the maximum value of the standard adhesion range and the relative adhesion.

9. The surface processing process for diodes according to claim 8, characterized in that: The process of passivating the diode that meets the passivation requirements and obtaining the actual passivation layer includes: detecting a crack area and a crack width of a passivation layer of a diode that meets passivation requirements, determining an actual crack rating value based on the crack area and the crack width of the passivation layer, and determining whether to adjust the passivation plasma power again based on the actual crack rating value; The actual crack rating value includes a maintenance crack rating value and a repair crack rating value.

10. The surface processing process for diodes according to claim 9, characterized in that: The process of judging whether to adjust the passivation plasma power again according to the actual crack rating value includes: If the actual crack rating value is less than the maintained crack rating value, there is no need to adjust the passivation plasma power again; In the case where the actual crack rating value is greater than or equal to the repaired crack rating value, the passivation plasma power is adjusted again according to the difference between the actual crack rating value and the repaired crack rating value.

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