Bipolar perovskite light-emitting transistor and preparation method thereof
By using high mobility organic and metal oxide semiconductor layers in bipolar perovskite luminescent transistors and modifying self-assembled single molecular layer at the interface, the interface stability and energy level matching problems are solved, and the stability and efficiency of the device are improved.
Patent Information
- Application Number
- CN202510302431.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-14
- Publication Date
- 2025-06-10
AI Technical Summary
The existing perovskite-based bipolar luminescent transistors have problems such as poor interface stability, unbalanced electron and hole mobility, and mismatch of energy levels of the luminescent and transport layers.
High mobility P-type organic semiconductors and N-type metal oxide semiconductors are used as hole transport layers and electron transport layers, and self-assembled single-molecule layers are modified at the interface between these layers and the perovskite luminescent layer to optimize energy level matching and reduce interface defects.
The stability and efficiency improvement of bipolar perovskite luminescent transistors are achieved, the electron and hole transmission rates are balanced, and the photoelectric performance of the device is optimized.
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Figure CN120129413A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of light-emitting transistor devices, and specifically to a bipolar perovskite light-emitting transistor and a preparation method thereof. Background Art
[0002] A light-emitting transistor is a dual-functional optoelectronic device that integrates the switching function of a transistor and the light-emitting function of a light-emitting diode. Compared with commercial AMOLEDs, it can directly drive and control the device to emit light, which not only simplifies the device structure but also improves the device integration. Therefore, it has potential application prospects in fields such as high-definition display panels and solid-state lighting.
[0003] Metal halide perovskites have shown revolutionary potential in the field of light-emitting diodes (LEDs) due to their excellent optoelectronic properties. Their high photoluminescence quantum yield, wide color gamut (full width at half maximum as narrow as below 20 nm), and adjustable bandgap (covering the visible to near-infrared band) enable them to achieve efficient and high-color-purity full-color emission, and the external quantum efficiency (EQE) has exceeded 20%. However, there are still very great challenges for current perovskite-based bipolar light-emitting transistors. For example, poor interface stability, imbalance in electron and hole mobilities, and mismatching of energy levels between the light-emitting layer and the transport layer.
[0004] In view of this, the present invention provides a bipolar perovskite light-emitting transistor and a preparation method thereof. Summary of the Invention
[0005] Aiming at the deficiencies in the prior art, the present invention provides a bipolar perovskite light-emitting transistor and a preparation method thereof.
[0006] To achieve the above object, the present invention adopts the following technical solutions to solve:
[0007] A bipolar perovskite light-emitting transistor includes a gate electrode, a gate insulating layer, a hole transport layer, a self-assembled monolayer, a perovskite light-emitting layer, an electron transport layer, and a source electrode and a drain electrode; wherein the gate electrode, the gate insulating layer, the electron transport layer, the self-assembled monolayer, the perovskite light-emitting layer, the self-assembled monolayer, and the hole transport layer are stacked from bottom to top, the source and drain electrodes are on one side of the hole transport layer, and the self-assembled monolayer is used to modify the interfaces between the hole transport layer and the perovskite light-emitting layer, and between the electron transport layer and the perovskite light-emitting layer, respectively.
[0008] Further, the gate electrode is a doped silicon wafer with single-sided oxidation, and the thickness of the single-sided oxide layer is between 50 - 300 nm.
[0009] Further, the electron transport layer is a metal oxide semiconductor, specifically an N-type semiconductor with an electron mobility greater than 5 cm 2 V -1s -1 。
[0010] Further, the electron transport layer includes one or more of zinc oxide, indium oxide, indium zinc oxide, tin oxide, indium tin oxide, and indium gallium zinc oxide.
[0011] Further, an additive is added to the perovskite light-emitting layer to regulate the defect state density and energy band of the perovskite.
[0012] Further, the hole transport layer is an organic semiconductor, specifically a p-type semiconductor with a hole mobility greater than 1 cm 2 V -1 s -1 。
[0013] Further, the hole transport layer includes at least one of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, 2,6-diphenylanthracene, and pentacene.
[0014] Further, the thickness of the hole transport layer is between 15 - 50 nm.
[0015] Further, the self-assembled monolayer is a small molecule material with functional groups such as O=P-OH, O=C-OH, O=S-OH, and O=Si-OH at one end, which can bond with metal oxides to form a self-assembled monolayer.
[0016] On the other hand, the present invention provides a method for preparing the perovskite light-emitting transistor described above, the method comprising:
[0017] Cleaning the doped silicon substrate and preparing a dielectric layer;
[0018] Spin-coating the electron transport layer;
[0019] Spin-coating the self-assembled monolayer;
[0020] Spin-coating the perovskite light-emitting layer;
[0021] Spin-coating the self-assembled monolayer;
[0022] Evaporating the hole transport layer;
[0023] Evaporating the source and drain electrodes;
[0024] The beneficial effects of the present invention are:
[0025] In the present invention, a P-type organic semiconductor with high mobility and an N-type metal oxide semiconductor are used as the hole transport layer and the electron transport layer respectively to obtain a balanced bipolar perovskite light-emitting transistor. At the same time, self-assembled monolayers are used to modify the interfaces between the electron and hole transport layers and the perovskite light-emitting layer, optimizing the energy level matching of the device and reducing interface defects, thereby improving the stability and efficiency of the device. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figure 1 FIG. is a schematic structural diagram of a bipolar perovskite light-emitting transistor according to an embodiment of the present invention.
[0027] Figure 2 FIG. is a flowchart of a method for fabricating a bipolar perovskite light-emitting transistor according to an embodiment of the present invention.
[0028] Figure 3 FIG. is an optical microscope photograph of the operation of a device according to an embodiment of the present invention.
[0029] Figure 4 FIG. is an electroluminescence spectrum according to an embodiment of the present invention.
[0030] Figure 5 FIG. is an electrical characteristic curve according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0031] To enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the described embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.
[0032] As Figure 1 shown: On the one hand, the present invention provides a bipolar perovskite light-emitting transistor, including a gate electrode, a gate insulating layer, a hole transport layer, a self-assembled monolayer, a perovskite light-emitting layer, an electron transport layer, and a source electrode and a drain electrode. Among them, the gate electrode, the gate insulating layer, the electron transport layer, the self-assembled monolayer, the perovskite light-emitting layer, the self-assembled monolayer, and the hole transport layer are stacked from bottom to top, the source and drain electrodes are on one side of the hole transport layer, and the self-assembled monolayers are respectively used to modify the interfaces between the hole transport layer and the perovskite light-emitting layer, and between the electron transport layer and the perovskite light-emitting layer.
[0033] Optionally, the gate electrode is a doped silicon wafer with single-sided oxidation. The doping can be N-type doping or P-type doping, and the thickness of the single-sided oxide layer can be between 50 and 300 nm.
[0034] Optionally, the gate insulating layer is an oxide with dielectric properties, specifically one or two of silicon dioxide, zirconium oxide, aluminum oxide, hafnium oxide, etc. Silicon dioxide, zirconium oxide, aluminum oxide, and hafnium oxide can be deposited by atomic layer deposition, and aluminum oxide and hafnium oxide can also be deposited by solution method. The thickness can be between 10 - 300 nm.
[0035] Optionally, the electron transport layer is a metal oxide semiconductor. Specifically, the electron transport layer is an N-type semiconductor with an electron mobility greater than 5 cm 2 V -1 s -1 , specifically one or more of zinc oxide, indium oxide, indium zinc oxide, tin oxide, indium tin oxide, and indium gallium zinc oxide. Among them, zinc oxide, indium oxide, indium zinc oxide, tin oxide, indium tin oxide, and indium gallium zinc oxide can be prepared by solution method or deposited by magnetron sputtering. The thickness can be between 5 - 100 nm.
[0036] Optionally, the perovskite light-emitting layer is a semiconductor thin-film light-emitting material with the general formula ABX3. The A-site ions are alkali metals or organic cations, the B-site ions are transition metal cations, and the X-site ions are halogen anions. The thickness is between 10 - 200 nm.
[0037] Optionally, additives are added to the perovskite light-emitting layer to regulate the defect state density and energy band of the perovskite.
[0038] Optionally, the hole transport layer is an organic semiconductor. Specifically, the hole transport layer is a P-type semiconductor with a hole mobility greater than 1 cm 2 V -1 s -1 , specifically at least one of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, 2,6-diphenylanthracene, and pentacene. 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, 2,6-diphenylanthracene, and pentacene are deposited by evaporation, and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene can also be prepared by solution method. The thickness can be between 15 - 50 nm.
[0039] Optionally, the self-assembled monolayer is a small molecule material with functional groups such as O=P-OH, O=C-OH, O=S-OH, and O=Si-OH at one end, which can bond with metal oxides to form a self-assembled monolayer. The self-assembled monolayer can be spin-coated by solution method or prepared by physical vapor deposition technology.
[0040] Optionally, the source and drain electrodes are both made of high-conductivity metal materials such as gold and silver, and the thickness can be between 30-200 nm.
[0041] such as Figure 2 As shown, on the other hand, the present invention provides a method for fabricating a bipolar perovskite light-emitting transistor, and the specific steps include: 1: cleaning the substrate and depositing the gate insulating layer; 2: spin-coating an electron transport layer on the gate insulating layer; 3: sequentially spin-coating self-assembled monolayers; 4: spin-coating a perovskite light-emitting layer; 5: spin-coating a self-assembled monolayer; 6: evaporating a hole transport layer; 7: evaporating source and drain electrodes.
[0042] To enable those skilled in the art to reproduce this research, the feasibility of this technology is presented by way of examples. A doped silicon with a single-sided oxidation was used as the substrate, the thickness of the silicon oxide was 300 nm, an indium zinc oxide electron transport layer was spin-coated, and (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl)phosphonic acid (Me-4PACz) was spin-coated for modification. Subsequently, a perovskite light-emitting thin film was spin-coated, a self-assembled monolayer of Me-4PACz was spin-coated, 2,6-diphenylanthracene was evaporated as the hole transport layer, and Au was evaporated as the source and drain electrodes to fabricate a bipolar perovskite light-emitting transistor. The optical microscope photograph of the device operation is shown in the appendix Figure 3 and the electroluminescence spectrum is shown in the appendix Figure 4 .
[0043] such as Figure 5 are the transistor transfer characteristic curve and output characteristic curve of the device, indicating that the light-emitting transistor has obvious bipolar transport characteristics.
[0044] Finally, it should be noted that the above are only preferred examples of the present invention and are not used to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.
Claims
1. A bipolar perovskite light-emitting transistor, characterized in that: The light-emitting transistor comprises a gate electrode, a gate insulating layer, a hole transport layer, a self-assembled monolayer, a perovskite light-emitting layer, an electron transport layer, and a source electrode and a drain electrode; wherein the gate electrode, the gate insulating layer, the electron transport layer, the self-assembled monolayer, the perovskite light-emitting layer, the self-assembled monolayer, and the hole transport layer are stacked from bottom to top, the source and drain electrodes are on one side of the hole transport layer, and the self-assembled monolayer is used to modify the interface between the hole transport layer and the perovskite light-emitting layer, and the interface between the electron transport layer and the perovskite light-emitting layer, respectively.
2. A bipolar perovskite light-emitting transistor according to claim 1, characterized in that: The gate is a doped silicon wafer oxidized on one side, and the thickness of the single-side oxide layer is between 50-300 nm.
3. The bipolar perovskite light-emitting transistor according to claim 1, characterized in that: The electron transport layer is a metal oxide semiconductor, specifically an N-type semiconductor with an electron mobility greater than 5 cm 2 V -1 s -1 .
4. A bipolar perovskite light-emitting transistor according to claim 1 or 3, characterized in that ,, the electron transport layer includes one or more of zinc oxide, indium oxide, indium zinc oxide, tin oxide, indium tin oxide, and indium gallium zinc oxide.
5. The bipolar perovskite light-emitting transistor according to claim 1, characterized in that: Additives are added to the perovskite light-emitting layer to adjust the defect state density and energy band of the perovskite.
6. A bipolar perovskite light-emitting transistor according to claim 1 or 3, characterized in that: The hole transport layer is an organic semiconductor, specifically a P-type semiconductor with a hole mobility greater than 1 cm 2 V -1 -1 s。 7. A bipolar perovskite light-emitting transistor according to claim 6, characterized in that The hole transport layer includes at least one of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, 2,6-diphenylanthracene, and pentacene.
8. A bipolar perovskite light-emitting transistor according to claim 3, 5 or 7, characterized in that: The thickness of the hole transport layer is between 15-50 nm.
9. The bipolar perovskite light-emitting transistor according to claim 8, characterized in that: The self-assembled monolayer is a small molecule material with O=P-OH, O=C-OH, O=S-OH, O=Si-OH functional groups at one end, which can bond with metal oxides to form a self-assembled monolayer.
10. The method for preparing a bipolar perovskite light-emitting transistor according to claim 1, characterized in that The steps are as follows: 1: cleaning the substrate and depositing the gate insulating layer; 2: spin coating the electron transport layer on the gate insulating layer; 3: spin coating the self-assembled monolayer in turn; 4: spin coating the perovskite light-emitting layer; 5: spin coating the self-assembled monolayer; 6: Evaporation of hole transport layer; 7: Evaporation of source and drain electrodes.