Composite material and preparation method thereof, photoelectric device and display device

Abstract

The invention discloses a composite material and a preparation method thereof, a photoelectric device and a display device, and relates to the technical field of display. The composite material comprises inorganic nanoparticles and a complex, wherein the complex comprises phytic acid and metal ions. According to the composite material provided by the invention, the complex can avoid agglomeration of the inorganic nanoparticles and improve the stability of the inorganic nanoparticles, so that the stability of the device is improved.

Description

Technical Field

[0001] This application relates to the field of display technologies, and in particular, to a composite material, a preparation method thereof, an optoelectronic device, and a display device. Background Art

[0002] Currently, the widely used light-emitting devices are organic light-emitting diodes (OLEDs) and quantum dot light-emitting diodes (QLEDs). Due to its excellent display performance such as self-luminescence, simple structure, ultra-thin and light, fast response speed, wide viewing angle, low power consumption, and flexible display, OLED has become the mainstream technology in the field of display technology. QLED has the advantages of saturated emission light color and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields. In recent years, it has become a strong competitor to OLED.

[0003] In the prior art, inorganic nanoparticles are often used as the material of the carrier functional layer to improve the carrier transport efficiency. However, inorganic nanoparticles are prone to agglomeration, resulting in a decrease in the film-forming property of the carrier functional layer and a decline in device stability. Therefore, the stability of inorganic nanoparticles needs to be further improved. Summary of the Invention

[0004] In view of this, this application provides a composite material, a preparation method thereof, an optoelectronic device, and a display device.

[0005] An optoelectronic device according to an embodiment of this application includes inorganic nanoparticles and a complex, and the complex includes phytic acid and metal ions.

[0006] Correspondingly, an embodiment of this application also provides a preparation method of a composite material, including:

[0007] Providing a precursor solution and phytic acid, where the precursor solution includes a metal salt and a base;

[0008] Mixing the phytic acid with the precursor solution to obtain a composite material.

[0009] Correspondingly, an embodiment of this application also provides an optoelectronic device, including a first electrode, an active layer, a first carrier functional layer, and a second electrode stacked in sequence, where the material of the first carrier functional layer includes the above composite material, or includes the composite material prepared by the above preparation method.

[0010] Correspondingly, an embodiment of this application also provides a display device, and the display device includes the above optoelectronic device.

[0011] For the composite material provided by this application, the complex can avoid the agglomeration of inorganic nanoparticles, improve the stability of inorganic nanoparticles, and thus improve the stability of the device. Description of the Drawings

[0012] To more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those skilled in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.

[0013] Figure 1 It is a flowchart of the preparation method of the composite material provided by the embodiment of the present application;

[0014] Figure 2 It is a schematic structural diagram of the optoelectronic device provided by the embodiment of the present application;

[0015] Figure 3 It is a schematic structural diagram of another optoelectronic device provided by the embodiment of the present application;

[0016] Figure 4 It is a scanning electron microscope image of the composite material provided by Embodiment 1 of the present application;

[0017] Figure 5 It is a scanning electron microscope image of the material provided by Comparative Example 1 of the present application.

[0018] Reference numerals:

[0019] Optoelectronic device 100; first electrode 10; active layer 20; first carrier functional layer 30; second electrode 40; second carrier functional layer 50. Detailed implementation manners

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some embodiments of the present application, rather than all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation manners described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0021] In the present application, unless otherwise stated, the orientation terms such as "upper" and "lower" generally refer to the upper and lower in the actual use or working state of the device, specifically the drawing direction in the accompanying drawings; and "inner" and "outer" refer to the outline of the device. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third, etc. are only used as labels and do not impose numerical requirements or establish an order.

[0022] In this application, "and / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone. Here, A and B can be singular or plural.

[0023] In this application, "at least one" means one or more, and "a plurality" means two or more. "One or several", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can both represent: a, b, c, a - b (i.e., a and b), a - c, b - c, or a - b - c, where a, b, and c can be single or multiple respectively.

[0024] The various embodiments of this application can exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be construed as a rigid limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub - ranges and individual values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub - ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and individual numbers within the range, such as 1, 2, 3, 4, 5, and 6, and this applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0025] The technical solution of this application is as follows:

[0026] In a first aspect, an embodiment of this application provides a composite material, including inorganic nanoparticles and a complex, and the complex includes phytic acid (PA) and metal ions.

[0027] Phytic acid is a multi - dentate metal chelating agent, and its structural formula is shown in formula (Ⅰ). Its molecule contains six phosphate groups (12 free hydrogens), has strong chelating ability, especially is easy to combine with metal cations, and has good stability.

[0028]

[0029] The composite material provided by the present application includes inorganic nanoparticles and a complex. The complex includes phytic acid and metal ions. The complex can isolate the inorganic nanoparticles from each other, avoid the aggregation of the inorganic nanoparticles, and improve the physical stability of the inorganic nanoparticles; moreover, the oxygen atoms of phytic acid can also passivate the surface defects of the inorganic nanoparticles, reduce the adsorption of water and oxygen by the surface defects of the inorganic nanoparticles, and improve the chemical stability of the inorganic nanoparticles.

[0030] In some embodiments, the composite material is composed of the inorganic nanoparticles and the complex.

[0031] In some embodiments, the phytic acid and the metal ions are connected by a coordination bond. That is to say, the complex is a chelate formed by the metal ions and the phytic acid.

[0032] It can be understood that the metal ions are linked to the coordinating atoms in phytic acid by a coordination bond to form a heterocyclic structure containing metal ions, and this heterocyclic structure is also called a chelate ring. The formation of the chelate ring makes the chelate have greater stability than non-chelate complexes with similar composition and structure. This effect of increasing stability caused by chelation is called the chelation effect. Through the chelation effect, the complex can effectively improve the stability of the inorganic nanoparticles.

[0033] In some embodiments, the valence of the metal ions is divalent or higher. It can be understood that metal ions with a valence of divalent or higher are more likely to form chelates to improve stability.

[0034] Preferably, the metal ions include transition metal ions with a valence of divalent or higher. The chelating performance of the transition metal ions with a valence of divalent or higher is stronger, and they are easy to form stable chelates with phytic acid.

[0035] In some embodiments, the metal ions include one or more of zinc ions, titanium ions, zirconium ions, tantalum ions, copper ions, manganese ions, yttrium ions, nickel ions, vanadium ions, cadmium ions, molybdenum ions, tungsten ions, chromium ions.

[0036] Exemplarily, when the metal ion is divalent, the structural formula of the complex is shown in formula (II), and M is a metal ion:

[0037]

[0038] In some embodiments, the inorganic nanoparticles contain a metal element. Preferably, the metal element of the metal ions is the same as the metal element of the inorganic nanoparticles. In this way, the matching between the complex and the inorganic nanoparticles can be better.

[0039] In some embodiments, the composite material includes inorganic nanoparticles and a complex coating the inorganic nanoparticles. It can be understood that after the surface of the inorganic nanoparticles is coated with the complex, the complex can isolate the inorganic nanoparticles from each other, thereby avoiding the aggregation of the inorganic nanoparticles.

[0040] In some embodiments, the molar ratio of the inorganic nanoparticles to the complex is 1:(50 - 200), for example, it can be 1:80, 1:100, 1:120, 1:150, 1:180, etc. Within the range of the molar ratio, it is beneficial for the complex to effectively improve the stability of the inorganic nanoparticles.

[0041] In some embodiments, the average particle size of the inorganic nanoparticles is 3 nm to 20 nm, for example, it can be 5 nm, 8 nm, 10 nm, 12 nm, 15 nm, 18 nm, etc.

[0042] In some embodiments, the inorganic nanoparticles include P-type inorganic nanoparticles or N-type inorganic nanoparticles.

[0043] In some embodiments, the N-type inorganic nanoparticles include one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the first undoped metal oxide particles include ZnO, TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 One or more of them, and the metal oxides in the first doped metal oxide particles include ZnO, TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 、Al 2 O 3One or more of the following, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS, CdO, CdSe, the IIIA-VA group semiconductor materials include one or more of InP, GaP, AlP, InAs, GaAs, AlAs, and the IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS, CuInSe, CuGaSe, AgInS, AgGaS, AgInSe, AgGaSe.

[0044] In some embodiments, the P-type inorganic nanoparticles include one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles each independently include MoO 3 、WO 3 、NiO、CrO 3 、CuO、V 2 O 5 One or more of the following. The doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V. The metal sulfides include one or more of CuS, MoS 3 、WS 3 One or more of the following. The metal selenides include MoSe 3 、WSe 3 、CuSe 3 One or more of the following. The metal nitrides include P-type gallium nitride.

[0045] In a second aspect, please refer to Figure 1 , embodiments of the present application further provide a method for preparing a composite material, including:

[0046] S11. Provide a precursor solution and phytic acid. The precursor solution includes a metal salt and a base;

[0047] S12. Mix the phytic acid with the precursor solution to obtain a composite material.

[0048] In S11:

[0049] In some embodiments, the method for preparing the precursor solution includes:

[0050] S111. Provide a metal salt solution and an alkali solution. The metal salt solution includes a metal salt and a first solvent, and the alkali solution includes an alkali and a second solvent.

[0051] S112. Mix the metal salt solution and the alkali solution to obtain a precursor solution.

[0052] In S111:

[0053] In some embodiments, the metal salt includes one or more of zinc salt, nickel salt, titanium salt, tin salt, tantalum salt, zirconium salt, cadmium salt, molybdenum salt, tungsten salt, copper salt, indium salt, gallium salt, aluminum salt, magnesium salt, lithium salt, manganese salt, yttrium salt, lanthanum salt, cerium salt.

[0054] In some embodiments, the metal salt includes one or more of acetate, sulfate, halide, nitrate. Exemplarily, the zinc salt includes one or more of zinc acetate, zinc sulfate, zinc halide, zinc nitrate.

[0055] In some embodiments, the alkali includes one or more of potassium hydroxide, lithium hydroxide, sodium hydroxide, ammonium hydroxide, ethylenediamine, ethanolamine, diethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide.

[0056] In some embodiments, the molar ratio of the salt ions in the metal salt to the hydroxide ions in the alkali is 1:(1.5 - 3), for example, it can be 1:1.8, 1:2, 1:2.2, 1:2.5, 1:2.8, etc.

[0057] In some embodiments, in the metal salt solution, the molar concentration of the metal salt solution is 0.1 mol / L - 1 mol / L, for example, it can be 0.2 mol / L, 0.3 mol / L, 0.4 mol / L, 0.5 mol / L, 0.6 mol / L, 0.7 mol / L, 0.8 mol / L, 0.9 mol / L, etc. Within the range of the molar concentration, it is beneficial for the metal salt to be fully dissolved.

[0058] In some embodiments, in the alkali solution, the molar concentration of the alkali is 0.1 mol / L - 1 mol / L, for example, it can be 0.2 mol / L, 0.3 mol / L, 0.4 mol / L, 0.5 mol / L, 0.6 mol / L, 0.7 mol / L, 0.8 mol / L, 0.9 mol / L, etc. Within the range of the molar concentration, it is beneficial for the alkali to be fully dissolved.

[0059] In some embodiments, the pH of the precursor solution is 12 - 14, for example, it can be 12.2, 12.5, 12.8, 13, 13.2, 13.5, 13.8, etc.

[0060] In some embodiments, the first solvent and the second solvent each independently include one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, and cresol.

[0061] In the S112:

[0062] In some embodiments, the method of mixing the metal salt solution and the alkali solution includes: dropping the alkali solution into the metal salt solution. It can be understood that by adopting the dropping method for mixing, it is beneficial to control the pH within a suitable range.

[0063] The mixing of the metal salt solution and the alkali solution can be carried out at room temperature.

[0064] In some embodiments, after mixing the metal salt solution and the alkali solution, first stirring is further included.

[0065] Furthermore, the time of the first stirring is 1 h to 4 h, for example, it can be 1.5 h, 2 h, 2.5 h, 3 h, 3.5 h, etc. In this way, it is beneficial for the metal salt and the alkali solution to be fully mixed to prepare inorganic nanoparticles.

[0066] In the S12:

[0067] It can be understood that the metal salt contains metal ions, and the phytic acid is connected to the metal ions through coordination bonds to form a complex.

[0068] In some embodiments, the molar ratio of the metal salt to the phytic acid is (50 - 200):1, for example, it can be 80:1, 100:1, 120:1, 150:1, 180:1, etc. Within the range of the molar ratio, it is beneficial for the phytic acid to form a complex with the metal ions in the metal salt, effectively improving the stability of the inorganic nanoparticles.

[0069] In some embodiments, after mixing the phytic acid and the precursor solution, second stirring is further included.

[0070] Furthermore, the time of the second stirring is 0.5 h to 3 h, for example, it can be 0.8 h, 1 h, 1.2 h, 1.5 h, 1.8 h, 2 h, 2.2 h, 2.5 h, 2.8 h, etc. Within the range of the time of the second stirring, it is beneficial for the precursor solution and the phytic acid to fully react to achieve the formation of the complex and the coating of the inorganic nanoparticles by the complex.

[0071] The second stirring can be carried out at room temperature. After the second stirring, a clear and transparent solution can be obtained.

[0072] In some embodiments, after the phytic acid and the precursor solution are mixed, a precipitant is further added to precipitate the composite material.

[0073] In some embodiments, the precipitant includes one or more of ethyl acetate, acetone, hexane, and heptane.

[0074] The preparation method of the composite material provided by the present application is simple in operation and low in cost, and can effectively prepare a composite material in which inorganic nanoparticles are coated with a complex.

[0075] In a third aspect, please refer to Figure 2 , the embodiment of the present application further provides an optoelectronic device 100, which includes a first electrode 10, an active layer 20, a first carrier functional layer 30, and a second electrode 40 that are sequentially stacked. The material of the first carrier functional layer 30 includes the above composite material.

[0076] In the optoelectronic device 100 provided by the present application, the material of the first carrier functional layer 30 includes inorganic nanoparticles and phytic acid connected to the inorganic nanoparticles. When preparing the first carrier functional layer 30, during the film-forming annealing process, the complex separates the inorganic nanoparticles from each other, which can inhibit the aggregation and growth of the inorganic nanoparticles, and thus improve the uniformity and carrier transport ability of the first carrier functional layer 30; and phytic acid can passivate the defects of the inorganic nanoparticles, reduce the adsorption of water and oxygen on the surface defects of the inorganic nanoparticles, reduce the exciton quenching caused by the defect energy levels of the inorganic nanoparticles, and adjust the injection balance of electrons and holes, thereby improving the light-emitting efficiency and stability of the optoelectronic device 100.

[0077] In some embodiments, the optoelectronic device 100 includes a light-emitting diode.

[0078] In some embodiments, the first carrier functional layer 30 is a hole functional layer, and the inorganic nanoparticles include P-type inorganic nanoparticles.

[0079] In other embodiments, the first carrier functional layer 30 is an electron functional layer, and the inorganic nanoparticles include N-type inorganic nanoparticles.

[0080] In some embodiments, please refer to Figure 3 , the optoelectronic device 100 further includes a second carrier functional layer 50, and the second carrier functional layer 50 is disposed between the first electrode 10 and the active layer 20.

[0081] In some embodiments, the first carrier functional layer 30 is a hole functional layer, and the second carrier functional layer 50 is an electron functional layer.

[0082] In other embodiments, the second carrier functional layer 50 is a hole functional layer, and the first carrier functional layer 30 is an electron functional layer.

[0083] Furthermore, the hole functional layer includes one or more of a hole injection layer and a hole transport layer.

[0084] The electron functional layer includes one or more of an electron injection layer and an electron transport layer.

[0085] In some embodiments, the first electrode 10 and the second electrode 40 each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, a carbon nanotube, graphene, and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode with a metal sandwiched between doped or undoped transparent metal oxides, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO 3 and one or more of AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 One or more of them. Herein, " / " represents a stacked structure. For example, AZO / Ag / AZO represents a composite electrode including a sequentially stacked AZO layer, an Ag layer, and an AZO layer.

[0086] In some embodiments, the material of the active layer 20 includes one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0087] The organic light-emitting material can be selected from, but not limited to, CBP:Ir(mppy) 3(4,4'-Bis(N-carbazole)-1,1'-biphenyl: Tris[2-(p-tolyl)pyridine iridium(III)]), TCTX: Ir(mmpy)(4,4',4”-Tris(carbazol-9-yl)triphenylamine: Tris[2-(p-tolyl)pyridine iridium]), a diaryl anthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, a TBPe fluorescent material, a TTPX fluorescent material, a TBRb fluorescent material, a DBP fluorescent material, a delayed fluorescence material, a TTA material, a TADF (thermally activated delayed) material, a polymer containing a B-N covalent bond, an HLCT (hybrid local charge transfer excited state) material, an Exciplex (excited complex) luminescent material, or one or more of these materials.

[0088] The quantum dot luminescent material may be selected from, but is not limited to, one or more of single structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials.

[0089] The materials of the single-structure quantum dots, the core materials of the core-shell structure quantum dots, and the shell materials of the core-shell structure quantum dots can be respectively selected from, but not limited to, one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dots is one or more layers. The II-VI group compounds can be selected from, but not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds can be selected from, but not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compounds can be selected from, but not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compounds can be selected from, but not limited to, one or more of CuInS 2 , CuInSe 2 , and AgInS 2 .

[0090] As an example, the quantum dots of the core-shell structure can be selected from but not limited to one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS, and InP / ZnSe / ZnS. In the expressions such as CdSe / ZnS above, the " / " indicates that the material after " / " (as the shell layer) coats the material before " / " (as the core layer).

[0091] The perovskite semiconductor material can be selected from but not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The general structural formula of the inorganic perovskite semiconductor is AMX 3 , where A is Cs + ion, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ one or more of them, and X is a halogen anion selected from Cl - , Br - , I - one or more of them. The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , where B is an organic amine cation selected from CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ ​, Yb 2+ , Eu 2+ One or more of the following, X is a halogen anion selected from Cl - , Br - , I - One or more of the following.

[0092] In some embodiments, when the second charge carrier functional layer 50 is a hole functional layer, the material of the second charge carrier functional layer 50 includes the above composite material, 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4”-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent material, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amine, polynuclear aromatic tertiary amine, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compound, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS doped with s-MoO 3derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nanocrystalline diamond, microcrystalline cellulose, and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides, one or more of which, the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles each independently include MoO 3 、WO 3 、NiO、CrO 3 、CuO、V 2 O 5 one or more of which, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include CuS, MoS 3 、WS 3 one or more of which, the metal selenides include MoSe 3 、WSe 3 one or more of which, the metal nitrides include p-type gallium nitride.

[0093] In some embodiments, when the second charge carrier functional layer 50 is an electron functional layer, the material of the second charge carrier functional layer 50 includes one or more of the above composite materials, first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials, the material of the first undoped metal oxide particles includes ZnO, TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 one or more of which, the metal oxides in the first doped metal oxide particles include ZnO, TiO 2 、SnO 2 、ZrO 2 、Ta 2 O 5 、Al 2 O 3One or more of them, the doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor materials include one or more of InP, GaP, and the IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS.

[0094] Fourthly, an embodiment of the present application further provides a display device, and the display device includes the above optoelectronic device 100.

[0095] The display device can be any electronic product with a display function. The electronic product includes but is not limited to a smart phone, a tablet computer, a notebook computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a vehicle-mounted display, a television or an e-book reader. Among them, the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0096] The present application will be specifically described below through specific embodiments. The following embodiments are only partial embodiments of the present application and do not limit the present application.

[0097] Embodiment 1

[0098] This embodiment provides a composite material, including zinc oxide and a complex coating zinc oxide. The complex includes phytic acid and zinc ions, and the molar ratio of zinc oxide to the complex is 1:100. The preparation method is as follows:

[0099] Add 1 mol of zinc acetate to 2 L of DMF to form a metal salt solution with a concentration of 0.5 mol / L. At room temperature, dropwise add an ethanol solution of 0.5 mol / L KOH. After stirring for 1 h, a precursor solution with a pH of 13 is obtained. Add 0.01 mol of phytic acid and continue stirring for 30 min to obtain a clear and transparent solution. Add ethyl acetate, precipitate and then centrifuge to obtain the composite material.

[0100] Embodiment 2

[0101] This embodiment is basically the same as Embodiment 1, except that the amount of zinc acetate used in this embodiment is 2 mol, and the molar ratio of zinc oxide to the complex in the composite material is 1:200.

[0102] Embodiment 3

[0103] This example is basically the same as Example 1, except that in this example, the dosage of zinc acetate is 0.5 mol, and the molar ratio of zinc oxide to the complex in the composite material is 1:50.

[0104] Example 4

[0105] This example is basically the same as Example 1, except that in this example, after adding phytic acid, the stirring time is 1.5 h.

[0106] Example 5

[0107] This example is basically the same as Example 1, except that in this example, after adding phytic acid, the stirring time is 3 h.

[0108] Example 6

[0109] This example is basically the same as Example 1, except that in this example, zinc acetate is replaced with tin nitrate, and the composite material includes tin oxide and a complex coating tin oxide.

[0110] Example 7

[0111] This example is basically the same as Example 1, except that in this example, zinc acetate is replaced with molybdenum sulfate, and the composite material includes molybdenum oxide and a complex coating molybdenum oxide.

[0112] Example 8

[0113] This example is basically the same as Example 1, except that in this example, zinc acetate is replaced with nickel chloride, and the composite material includes nickel oxide and a complex coating nickel oxide.

[0114] Comparative Example 1

[0115] This comparative example provides a material including zinc oxide inorganic nanoparticles.

[0116] Comparative Example 2

[0117] This comparative example provides a composite material including tin oxide inorganic nanoparticles and dipotassium phytic acid complexed with the tin oxide inorganic nanoparticles.

[0118] The composite materials of Example 1 and Comparative Example 1 were tested by SEM scanning electron microscopy, and the SEM images of the composite material of Example 1 are as Figure 4 shown, and the SEM images of the material of Comparative Example 1 are as Figure 5 shown.

[0119] From Figure 4 and Figure 5It can be seen that in the composite material of Example 1, after the complex formed by phytic acid and zinc ions coats zinc oxide, the dispersibility between zinc oxide particles is better. Compared with Comparative Example 1, no significant agglomeration occurs and the dispersion is more uniform.

[0120] Device Example 1

[0121] This example provides an optoelectronic device, and the preparation method is as follows:

[0122] Clean the ITO conductive glass with a cleaner to initially remove the stains on the surface. Subsequently, ultrasonically clean it in deionized water, acetone, absolute ethanol, and deionized water for 20 min respectively to remove the impurities on the surface. Finally, dry it with high-purity nitrogen to form an ITO anode;

[0123] Dissolve TFB in chlorobenzene with a concentration of 8 mg / mL, spin-coat it on the ITO anode at a rotation speed of 3000 rpm for 30 s, and heat it at 150 °C for 30 min to form a 30-nm hole transport layer;

[0124] Prepare a quantum dot solution of CdZnSe with a mass concentration of 10 mg / mL, spin-coat it on the hole transport layer at a rotation speed of 3000 rpm for 30 s, and heat it at 80 °C for 30 min to form a 40-nm light-emitting layer;

[0125] Dissolve the composite material prepared in Example 1 in ethanol, spin-coat it on the light-emitting layer at a rotation speed of 4000 rpm for 30 s, and then heat it at 80 °C for 30 min to form a 40-nm electron transport layer;

[0126] On the electron transport layer, deposit Ag by thermal evaporation, with a vacuum degree not higher than 3x10 -4 Pa, a speed of 1 Å / s, and a time of 1000 s and a thickness of 100 nm to form a cathode;

[0127] Encapsulate to obtain the optoelectronic device.

[0128] Device Examples 2-6

[0129] Device Examples 2-6 are basically the same as Device Example 1, except that in Device Examples 2-6, the composite material of Example 1 is respectively replaced with the composite materials of Examples 2-6.

[0130] Device Examples 7-8

[0131] Device Examples 7-8 are basically the same as Device Example 1, except that in Device Examples 7-8, the composite material of Example 1 is respectively replaced with the material of Comparative Example 1, and the materials of the hole transport layer are respectively replaced with the composite materials of Examples 7-8.

[0132] Device Example 9

[0133] Device Example 9 is basically the same as Device Example 1, except that in this device example, the material of the hole transport layer is replaced with the composite material of Example 7.

[0134] Device Examples 10 - 12

[0135] Device Examples 10 - 12 are basically the same as Device Example 1, Device Example 7, and Device Example 9, except that in Device Examples 10 - 12, optoelectronic devices are fabricated in the order of cathode, electron transport layer, light-emitting layer, hole transport layer, hole injection layer, and anode.

[0136] Device Comparative Example 1

[0137] Device Comparative Example 1 is basically the same as Device Example 1, except that in this device example, the composite material of Example 1 is replaced with the material of Comparative Example 1.

[0138] Device Comparative Example 2

[0139] Device Comparative Example 2 is basically the same as Device Example 1, except that in this device example, the composite material of Example 1 is replaced with the material of Comparative Example 2.

[0140] Device Comparative Example 3

[0141] Device Comparative Example 3 is basically the same as Device Example 10, except that in this device example, the composite material of Example 10 is replaced with the material of Comparative Example 1.

[0142] The roughness RMS of the electron transport layers of Device Examples 1 - 6, Device Examples 9 - 10, Device Example 12, Device Comparative Examples 1 - 3, and the hole transport layers of Examples 7 - 8, Example 11 was measured using a surface roughness measuring instrument, and the results are shown in Table 1.

[0143] The luminous intensity and lifetime T95@1000nit of the optoelectronic devices of Device Examples 1 - 15 and Device Comparative Examples 1 - 3 were measured respectively, and the results are shown in Table 1.

[0144] Among them, the physical meaning of the luminous intensity is the luminous intensity passing through a unit area per unit time in a specific direction, with the unit of cd / A, and it is measured using a photometer.

[0145] The test method for the lifespan T95@1000nit is as follows: when the device is driven by a constant current or voltage, the time required for the brightness to decrease to a certain proportion of the maximum brightness. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this lifespan is the measured lifespan. To shorten the test cycle, the device lifespan test is usually carried out by accelerating the device aging at high brightness, and the lifespan at high brightness is obtained by fitting with the extended exponential decay brightness decay fitting formula. For example, the lifespan at 1000nit is denoted as T95@1000nit. The specific calculation formula is as follows:

[0146]

[0147] Among them, T95 L is the lifespan at low brightness, T95 H is the measured lifespan at high brightness, L H is the device accelerated to the maximum brightness, L L is 1000nit, A is the acceleration factor. In this experiment, the value of A is obtained as 1.7 by measuring the lifespans of several groups of QLED devices at the rated brightness.

[0148] Table 1

[0149]

[0150] It can be seen from Table 1 that:

[0151] From Device Examples 1 - 3 and Device Comparative Example 1, it can be obtained that compared with Device Comparative Example 1 using zinc oxide as the material of the electron transport layer, after the zinc oxide in Device Examples 1 - 3 is coated with a complex, the roughness of the electron transport layer significantly decreases, and the luminous intensity and service life of the optoelectronic device are both significantly improved; within the range of the complex provided in this application, the effect is the best when the ratio of the complex to the inorganic nanoparticles is appropriate, and too much or too little complex will affect the performance of the optoelectronic device;

[0152] From Device Example 1, Device Examples 4 - 5 and Device Comparative Example 1, it can be obtained that within the time range of the reaction between phytic acid and the precursor solution provided in this application, phytic acid can effectively chelate with metal ions to form a chelate, and then coat the inorganic nanoparticles, reducing the roughness of the electron transport layer, thereby improving the luminous intensity and service life of the optoelectronic device;

[0153] From Device Example 1, Device Example 6 and Device Comparative Example 1, it can be obtained that in Device Example 6, zinc oxide is replaced by tin oxide. After being coated with a complex, the roughness of the electron transport layer and the performance of the optoelectronic device are both better than those of Device Comparative Example 1. The roughness of its electron transport layer has no significant difference from that of the electron transport layer of zinc oxide coated with a complex in Device Example 1, but the performance of the optoelectronic device is slightly worse than that of the optoelectronic device in Device Example 1;

[0154] It can be seen from Device Example 1, Device Examples 7-9 and Device Comparative Example 1 that using nickel oxide coated with a complex in the hole transport layer can effectively reduce the film roughness of the hole transport layer, improve the luminescence intensity and service life of optoelectronic devices. In Device Example 9, the composite material is simultaneously applied to the electron transport layer and the hole functional layer, and the performance of its optoelectronic device is slightly better than that of the optoelectronic device in Device Example 7 where the composite material is only used in the hole transport layer, but slightly worse than that of the optoelectronic device in Device Example 1 where the composite material is only used in the electron transport layer;

[0155] It can be seen from Device Examples 10-12 and Device Comparative Example 3 that using the composite material provided by the present application in the hole functional layer and / or electron functional layer of an inverted device can effectively reduce the film roughness, improve the luminescence intensity of optoelectronic devices, and extend the service life of optoelectronic devices;

[0156] It can be seen from Device Example 1 and Device Comparative Example 2 that compared with Device Comparative Example 2 using dipotassium phytate to chelate inorganic nanoparticles, the film coated with inorganic nanoparticles by the complex provided by the present application has lower roughness, higher luminescence intensity and longer service life. This is because dipotassium phytate will introduce potassium ions, which has a certain impact on the performance of optoelectronic devices, while the present application is a complex formed by the complexation of phytic acid and metal ions, which is used to coat inorganic nanoparticles, and the improvement effect on the stability of inorganic nanoparticles is more obvious.

[0157] The composite material, its preparation method, optoelectronic devices and display devices provided by the embodiments of the present application have been introduced in detail above. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A composite material, characterized in that, it comprises inorganic nanoparticles and a complex, and the complex comprises phytic acid and metal ions.

2. The composite material according to claim 1, characterized in that, the composite material is composed of the inorganic nanoparticles and the complex; and / or the molar ratio of the inorganic nanoparticles to the complex is 1:(50 - 200).

3. The composite material according to claim 1, characterized in that, the valence of the metal ions is divalent or higher; and / or the metal ions include transition metal ions; and / or the inorganic nanoparticles include P-type inorganic nanoparticles or N-type inorganic nanoparticles; and / or the average particle size of the inorganic nanoparticles is 3 nm - 20 nm.

4. The composite material according to claim 3, characterized in that, the metal ions include one or more of zinc ions, titanium ions, zirconium ions, tantalum ions, copper ions, manganese ions, yttrium ions, nickel ions, vanadium ions, cadmium ions, molybdenum ions, tungsten ions, chromium ions; and / or The N-type inorganic nanoparticles include one or more of a first doped metal oxide particle, a first undoped metal oxide particle, a IIB-VIA group semiconductor material, a IIIA-VA group semiconductor material, and a IB-IIIA-VIA group semiconductor material. The material of the first undoped metal oxide particle includes one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 . The metal oxide in the first doped metal oxide particle includes one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 , Al 2 O 3 . The doping element in the first doped metal oxide particle includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, CdS, CdO, CdSe. The IIIA-VA group semiconductor material includes one or more of InP, GaP, AlP, InAs, GaAs, AlAs. The IB-IIIA-VIA group semiconductor material includes one or more of CuInS, CuGaS, CuInSe, CuGaSe, AgInS, AgGaS, AgInSe, AgGaSe; and / or The P-type inorganic nanoparticles include one or more of second-doped metal oxide particles, second-undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides. The metal oxides in the second-doped metal oxide particles and the metal oxides in the second-undoped metal oxide particles independently include one or more of MoO 3 , WO 3 , NiO, CrO 3 , CuO, V 2 O 5 . The doping elements in the second-doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V. The metal sulfides include one or more of CuS, MoS 3 , WS 3 . The metal selenides include one or more of MoSe 3 , WSe 3 , CuSe 3 . The metal nitrides include p-type gallium nitride.

5. The composite material according to claim 1, characterized in that, the phytic acid and the metal ions are connected by a coordination bond; and / or the composite material comprises inorganic nanoparticles and a complex coating the inorganic nanoparticles.

6. A preparation method of a composite material, characterized in that, it comprises: providing a precursor solution and phytic acid, wherein the precursor solution comprises a metal salt and a base; mixing the phytic acid with the precursor solution to obtain a composite material.

7. The preparation method according to claim 6, characterized in that, the molar ratio of the metal salt to the phytic acid is (50 - 200):1; and / or the metal salt contains metal ions, and the phytic acid and the metal ions are connected by a coordination bond to form a complex.

8. The preparation method according to claim 6, characterized in that, the preparation method of the precursor solution comprises: providing a metal salt solution and a base solution, wherein the metal salt solution comprises a metal salt and a first solvent, and the base solution comprises a base and a second solvent; mixing the metal salt solution and the base solution to obtain a precursor solution.

9. The preparation method according to claim 8, characterized in that, the metal salt includes one or more of zinc salt, nickel salt, titanium salt, tin salt, tantalum salt, zirconium salt, cadmium salt, molybdenum salt, tungsten salt, copper salt, indium salt, gallium salt, aluminum salt, magnesium salt, lithium salt, manganese salt, yttrium salt, lanthanum salt, cerium salt; and / or the base includes one or more of potassium hydroxide, lithium hydroxide, sodium hydroxide, ammonium hydroxide, ethylenediamine, ethanolamine, diethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide; and / or the first solvent and the second solvent each independently include one or more of chlorobenzene, diethylene glycol monobutyl ether, trimethoxybutanol, triethylene glycol monobutyl ether, diethylene glycol dimethyl ether, methanol, ethanol, propanol, butanol, ethylene glycol, isopropanol, glycerol, dimethyl sulfoxide, acetone, acetophenone, tetrahydrofuran, N,N-dimethylformamide, ethyl acetate, pyrrole, butyric acid, cresol.

10. The preparation method according to claim 8 or 9, It is characterized in that the molar ratio of the salt ions in the metal salt to the hydroxide ions in the base is 1:(1.5-3); and / or in the metal salt solution, the molar concentration of the metal salt solution is 0.1 mol / L to 1 mol / L; and / or in the alkali solution, the molar concentration of the base is 0.1 mol / L to 1 mol / L.

11. The preparation method according to claim 8, it is characterized in that after mixing the metal salt solution and the alkali solution, first stirring is further included; the time of the first stirring is 1 h to 4 h; and / or after mixing the phytic acid and the precursor solution, second stirring is further included; the time of the second stirring is 0.5 h to 3 h; and / or after mixing the phytic acid and the precursor solution, a precipitating agent is further added to precipitate the composite material; the precipitating agent includes one or more of ethyl acetate, acetone, hexane, and heptane.

12. An optoelectronic device, it is characterized in that it includes a first electrode, an active layer, a first carrier functional layer, and a second electrode which are sequentially stacked, and the material of the first carrier functional layer includes the composite material according to any one of claims 1 to 5, or includes the composite material prepared by the preparation method according to any one of claims 6 to 11.

13. The optoelectronic device according to claim 12, it is characterized in that the optoelectronic device further includes a second carrier functional layer, and the second carrier functional layer is disposed between the first electrode and the active layer; the first carrier functional layer is a hole functional layer, and the second carrier functional layer is an electron functional layer; or, the second carrier functional layer is a hole functional layer, and the first carrier function is an electron functional layer; When the first carrier functional layer is an electron functional layer, the inorganic nanoparticles include one or more of first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The materials of the first undoped metal oxide particles include one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 . The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 , Al 2 O 3 . The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS; when the first carrier functional layer is a hole functional layer, the inorganic nanoparticles include one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides, and metal nitrides, and the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include one or more of MoO3, WO3, NiO, CrO3, CuO, and V2O5, and the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, and V, the metal sulfides include one or more of CuS, MoS3, and WS3, the metal selenides include one or more of MoSe3 and WSe3, and the metal nitrides include p-type gallium nitride; When the second charge carrier functional layer is an electron functional layer, the material of the second charge carrier functional layer includes one or more of composite materials, first doped metal oxide particles, first undoped metal oxide particles, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, and IB-IIIA-VIA group semiconductor materials. The material of the first undoped metal oxide particles includes one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 . The metal oxides in the first doped metal oxide particles include one or more of ZnO, TiO 2 , SnO 2 , ZrO 2 , Ta 2 O 5 , Al 2 O 3 . The doping elements in the first doped metal oxide particles include one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga. The IIB-VIA group semiconductor materials include one or more of ZnS, ZnSe, CdS, CdO, CdSe, AlP, InAs, GaAs, AlAs. The IIIA-VA group semiconductor materials include one or more of InP, GaP. The IB-IIIA-VIA group semiconductor materials include one or more of CuInS, CuGaS, CuInSe, CuGaSe, AgInS, AgGaS, AgInSe, AgGaSe; When the second charge carrier functional layer is a hole functional layer, the materials of the second charge carrier functional layer include composite materials, 4,4'-N,N'-dicarbazolyl-biphenyl, N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4''-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro, N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine, 4,4',4'-tris(N-carbazolyl)-triphenylamine, 4,4',4'-tris(carbazol-9-yl)triphenylamine, trichloroisocyanuric acid, terbium-doped phosphate-based green luminescent materials, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))], poly(4-butylphenyl-diphenylamine), poly[bis(4-phenyl)(4-butylphenyl)amine], polyaniline, polypyrrole, poly(p-phenylene vinylene), poly(phenylene vinylene), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene], poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene], copper phthalocyanine, aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT, PEDOT:PSS and its derivatives, PEDOT:PSS doped with s-MoO 3 derivatives, poly(N-vinylcarbazole) and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, N,N'-bis(naphthalen-1-yl)-N,N'-diphenylbenzidine, spiro-NPB, nano-polycrystalline diamond, microcrystalline cellulose and tetracyanoquinodimethane, doped graphene, undoped graphene, second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, one or more of them, the metal oxides in the second doped metal oxide particles and the metal oxides in the second undoped metal oxide particles independently include MoO 3 、WO 3 、NiO、CrO 3 、CuO、V 2 O 5 One or more of them, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, and the metal sulfide includes CuS, MoS 3 , WS 3 One or more of them, the metal selenide includes MoSe 3 , WSe 3 , CuSe 3 One or more of them, and the metal nitride includes p-type gallium nitride.

14. The optoelectronic device according to claim 12, it is characterized in that The first electrode and the second electrode each independently include one or more of a metal, a carbon material, and a metal oxide; the metal includes one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon material includes one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the metal oxide includes a metal oxide electrode or a composite electrode in which a doped or undoped transparent metal oxide sandwiches a metal, and the material of the metal oxide electrode includes one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, MoO 3 and one or more of AMO, and the composite electrode includes one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO 2 / Ag / TiO 2 and TiO 2 / Al / TiO 2 and / or The material of the active layer includes one or more of organic light-emitting materials and quantum dots; the organic light-emitting material includes CBP:Ir(mppy) 3 (4,4'-bis(N-carbazole)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)]), TCTX: Ir(mmpy)(4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium]), a diarylanthracene derivative, a stilbene aromatic derivative, a pyrene derivative, a fluorene derivative, a TBPe fluorescent material, a TTPX fluorescent material, a TBRb fluorescent material, a DBP fluorescent material, a delayed fluorescence material, a TTA material, a TADF material, a polymer containing a B-N covalent bond, an HLCT material, an Exciplex luminescent material, or one or more of these; the quantum dots include one or more of single-structure quantum dots, core-shell structure quantum dots, and perovskite semiconductor materials. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are each independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds, and I-III-VI group compounds. The shell of the core-shell structure quantum dots is one or more layers. The II-VI group compounds include one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The IV-VI group compounds include one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe.The III-V compounds include one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the I-III-VI compounds include one or more of CuInS; 2 , CuInSe 2 and AgInS 2 ; the perovskite semiconductor materials include doped or undoped inorganic perovskite semiconductors, organic-inorganic hybrid perovskite semiconductors; the structural general formula of the inorganic perovskite semiconductor is AMX 3 , where A is a Cs + ion, M is a divalent metal cation selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2 + , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ one or more of them, and X is a halogen anion selected from Cl - , Br - , I - one or more of them; the structural general formula of the organic-inorganic hybrid perovskite semiconductor is BMX 3 , where B is an organic amine cation selected from CH 3 (CH 2 ) n-2 NH 3 + or [NH 3 (CH 2 ) n NH 3 2+ , where n≥2, M is a divalent metal cation selected from Pb 2+ , Sn 2+ ​, Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ , Eu 2+ one or more of the following, X is a halogen anion selected from Cl - , Br - , I - one or more of the following.

15. A display device, it is characterized in that it includes the optoelectronic device according to any one of claims 12 to 14.

Images