Double-sided antistatic grid release film

Abstract

The double-sided antistatic grid release film comprises a protective layer, an antistatic layer, a reticulated layer, a base film layer, a pressure-sensitive adhesive layer and a separation layer which are connected in sequence, antistatic agents and modifiers are added to the protective layer and the separation layer, the reticulated layer is provided with a chamfer structure, and the base film layer is made of a high-temperature-resistant material. By optimizing the material, the structure and the process of each layer, the problems of poor temperature resistance, insufficient antistatic effect, easy deformation of reticulate patterns, insufficient interlayer adhesion fastness and the like of a traditional product are solved, high exhaust efficiency and high grid structure strength are considered at the same time, and the release layer is ensured to have a better antistatic effect at the same time.

Description

Technical Field

[0001] The present invention relates to the technical field of release films, and particularly to a double-sided antistatic grid release film. Background Art

[0002] The release film, also known as the peeling film, isolation film, separation film, and protective film, has a separating property on its surface by coating a release agent on the surface of the film substrate. Its function is to protect the pressure-sensitive adhesive layer from being contaminated. Among them, the antistatic grid release film is widely used in the electronics industry due to its excellent exhaust and antistatic functions.

[0003] The substrate of the antistatic grid release film is a PET grid film. The production process of the PET grid film is mainly PE coating on PET followed by calendering, or direct calendering of PET. The common antistatic grid release films on the market currently have the following defects:

[0004] First, for the PET grid film with PE coating on PET followed by calendering, since the PE layer is not heat-resistant, the oven temperature in the subsequent release agent coating process cannot be too high, resulting in incomplete curing of some release agents, increased silicon transfer rate, and reduced viscosity of the pressure-sensitive adhesive layer in contact with the release layer.

[0005] Second, for the PET grid film directly calendered from PET, when the temperature is high during the release agent coating process, the shape of the mesh pattern is easily damaged under the influence of the coating tension, affecting the grid structure and exhaust effect.

[0006] Third, for the current antistatic release films on the market, the production process of the antistatic function of the release layer is to first coat an antistatic layer on the surface of the substrate and then coat a release agent on the surface of the antistatic layer to form the release layer. However, this process has two drawbacks: ① The antistatic layer is covered by the release layer, resulting in a significant reduction in the antistatic effect of the material; ② The adhesion strength between the antistatic layer and the release layer is not enough, easily leading to poor delamination.

[0007] Therefore, it is necessary to improve the above problems, improve the heat resistance of the mesh layer in the subsequent process, balance the grid structure strength and exhaust effect, and at the same time ensure that the release layer has a better antistatic effect. Summary of the Invention

[0008] In view of the defects in the prior art such as the poor heat resistance of the base film, easy damage to the mesh pattern, poor antistatic effect, and insufficient interlayer adhesion strength, the present invention provides a new double-sided antistatic grid release film.

[0009] To solve the above technical problems, the present invention is achieved through the following technical solutions:

[0010] A double-sided antistatic mesh release film, comprising a protective layer, an antistatic layer, a reticular layer, a base film layer, a pressure-sensitive adhesive layer, and a separation layer connected in sequence. The protective layer and the separation layer are both added with antistatic agents and modifiers. The reticular layer is provided with a chamfer structure, and the base film layer is made of a high-temperature resistant material.

[0011] Both the protective layer and the separation layer belong to the type of release layer. By adding antistatic agents to the protective layer and the separation layer, the double-sided antistatic function is realized, electrostatic accumulation is avoided, the antistatic effect is improved, and the problem of poor antistatic effect caused by the antistatic layer being covered by the release layer in the traditional design is solved. Here, the double-sided can refer to both the protective layer and the separation layer, or the protective layer and the antistatic layer, achieving a better antistatic effect. The modifier enhances the adhesion between the protective layer and the separation layer, reduces the risk of delamination, and solves the problem of insufficient adhesion fastness between the antistatic layer and the release layer in the traditional design. The reticular layer improves the exhaust efficiency, and the chamfer structure enhances the mechanical strength and deformation resistance of the reticular layer, preventing deformation caused by stress concentration during high-temperature coating process or other high-temperature processing, and solving the problem of the reticular shape being damaged after being affected by the coating tension in the traditional design. The base film layer made of a high-temperature resistant material improves the overall temperature resistance, adapts to the high-temperature processing environment, ensures complete curing of the release agent, and solves the problems of incomplete curing of the release agent, increased silicon transfer rate, and reduced viscosity of the pressure-sensitive adhesive layer in contact with the release layer in the traditional design.

[0012] The present invention solves the problems of poor temperature resistance, insufficient antistatic effect, easy deformation of the reticulation, and insufficient adhesion fastness between layers in traditional products by optimizing the materials, structures, and processes of each layer, while taking into account high exhaust efficiency and high grid structure strength, and ensuring that the release layer has a better antistatic effect.

[0013] As a preference, for the above-mentioned double-sided antistatic mesh release film, the protective layer and the separation layer are both made by coating an organosilicon release agent added with an antistatic agent and a modifier. The mass ratio of the organosilicon release agent, the antistatic agent, and the modifier is 95-99:1-5:0.4-0.6, and the coating amount is 0.1 g / m 2 ~2 g / m 2 。

[0014] The formulation design of the protective layer and the separation layer ensures the balance between the release performance and the antistatic function, avoids the influence of excessive antistatic agent on the release effect, the modifier improves the compatibility between the antistatic agent and the organosilicon, avoids coating cracking, and also enhances the interlayer adhesion. The coating amount design reduces the cost and material waste, while ensuring the uniformity of the release layer and the antistatic effect.

[0015] As a preference, for the above-mentioned double-sided antistatic mesh release film, the antistatic layer is made by coating an antistatic agent with a poly(thiophene) conductive polymer as the main body, and the coating amount is 0.5 g / m 2~1 g / m 2 , the surface resistance value of the antistatic layer is 10 6 Ω~10 9 Ω.

[0016] The polythiophene conductive polymer has high light transmittance and high stable antistatic property, and is suitable for the optical performance requirements of more industries. The resistance value range precisely matches the antistatic requirements of electronic components, etc. The coating amount design reduces costs and material waste, while ensuring uniform coverage of the antistatic layer, avoiding local antistatic failure, and also achieving high-transparency conductivity without affecting the optical performance.

[0017] Preferably, for a double-sided antistatic mesh release film as described above, the reticulated layer is made by a UV transfer printing process, and the reticulated layer is composed of polyurethane acrylate resin, acrylate monomer, and photoinitiator with a mass ratio of 25 - 35:55 - 65:3 - 8.

[0018] The polyurethane acrylate resin provides high toughness and wear resistance, balancing high hardness and flexibility. The acrylate monomer enhances fluidity. The photoinitiator ensures ultraviolet curing efficiency and achieves rapid curing. The three work together to ensure the structural performance of the reticulated layer. The UV transfer printing process can be rapidly formed at low temperature, avoiding damage to the film layer structure caused by high temperature. The replication accuracy of the UV transfer printing process can reach the nanometer level, ensuring the structural accuracy of the reticulated layer.

[0019] Preferably, for a double-sided antistatic mesh release film as described above, the reticulated layer is provided with micro-reticulations, the micro-reticulations are combined to form a grid structure, the micro-reticulations are parallelogram structures with side lengths of 100 μm - 1000 μm, and the inner angle range of the parallelogram structure is 30° - 150°.

[0020] The grid structure design of the parallelogram optimizes the exhaust path, generates multi-directional exhaust channels, and improves the exhaust efficiency when the release film is adhered to the substrate. The inner angle range design avoids stress concentration, enhances the compressive resistance and tear resistance of the reticulated layer, and the adjustable angle design can adapt to the leveling requirements of adhesives with more viscosities. The side length range adapts to the bubble size during the encapsulation of electronic components, etc., ensuring the bubble discharge rate.

[0021] Preferably, for a double-sided antistatic mesh release film as described above, the cross-section of the micro-reticulation is in an inverted T-shaped structure, the bottom width of the cross-section of the micro-reticulation is 10 μm - 200 μm, the height is 3 μm - 50 μm, and the top width of the cross-section of the micro-reticulation is less than the bottom width.

[0022] The inverted T-shaped cross-section increases the contact area at the root of the micro-reticulations, enhances the bonding force with the base film layer, and prevents detachment. The structure with a narrow top edge and a wide bottom edge improves the support strength of the micro-reticulations and avoids collapse and deformation during use. The width of the bottom edge can control the grid density, and the height can match the thickness of the adhesive layer. The narrowed top design can also reduce glue residue.

[0023] Preferably, for a double-sided antistatic grid release film as described above, the chamfer structure is located between the top and the root of the cross-section of the micro-reticulations, and the angle range of the chamfer structure is 100° to 170°.

[0024] The chamfer structure smoothly transitions between the top and the root of the micro-reticulations, reduces stress concentration, and extends the service life of the reticulation layer. The designed angle range balances the structural strength and the processing feasibility, avoiding difficulties in mold manufacturing caused by extreme angles. The designed angle range also balances the compressive strength and the smoothness of demolding.

[0025] Preferably, for a double-sided antistatic grid release film as described above, the material of the base film layer is one of PET, PBT, PI, PEEK, CPP, and BOPP.

[0026] High-temperature resistant materials and high-modulus materials can significantly improve the heat resistance and dimensional stability of the base film layer, and are suitable for high-temperature coating and curing processes. The diverse material selection can meet more cost requirements and application scenarios, and can be flexibly adjusted, improving the applicability.

[0027] Preferably, for a double-sided antistatic grid release film as described above, the UV transfer printing process of the reticulation layer is as follows: First, use a mold to form micro-reticulations with UV glue to form a grid structure, then transfer it to the surface of the base film layer, and then form the reticulation layer after curing by ultraviolet light radiation.

[0028] Mold forming ensures the precise replication of the micro-reticulations and the grid structure, improving the structural consistency. The ultraviolet light curing process is fast and efficient, avoiding thermal damage to other film layers caused by high temperature. The transfer printing process has a high finished product rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic structural diagram of the present invention;

[0030] Figure 2 is a schematic structural diagram of the grid structure in the present invention;

[0031] Figure 3 is a schematic cross-sectional structural diagram of the micro-reticulations in the present invention.

[0032] Reference numerals: protective layer 1, antistatic layer 2, reticulation layer 3, base film layer 4, pressure-sensitive adhesive layer 5, separation layer 6, chamfer structure 7, micro-reticulations 8;

[0033] The side length of the micro-reticulation 8 is L, the two adjacent interior angles are θ1 and θ2, the bottom width of the cross-section of the micro-reticulation 8 is W2, the top width is W1, the height is H, and the angle of the chamfer structure 7 is R. Detailed implementation manners

[0034] The following combines the appended Figures 1-3 drawings and detailed implementation manners to further describe the present invention in detail, but they do not limit the present invention:

[0035] Embodiment 1

[0036] A double-sided antistatic mesh release film includes a protective layer 1, an antistatic layer 2, a reticulation layer 3, a base film layer 4, a pressure-sensitive adhesive layer 5, and a separation layer 6 connected in sequence. Antistatic agents and modifiers are added to both the protective layer 1 and the separation layer 6. The reticulation layer 3 is provided with a chamfer structure 7, and the base film layer 4 is made of a high-temperature resistant material.

[0037] Preferably, both the protective layer 1 and the separation layer 6 are made by coating an organosilicon release agent added with an antistatic agent and a modifier. The mass ratio of the organosilicon release agent, the antistatic agent, and the modifier is 95-99:1-5:0.4-0.6, and the coating amount is 0.1 g / m 2 ~2 g / m 2 .

[0038] Preferably, the antistatic layer 2 is made by coating an antistatic agent with a main body of a polythiophene conductive polymer, and the coating amount is 0.5 g / m 2 ~1 g / m 2 , and the surface resistance value of the antistatic layer 2 is 10 6 Ω~10 9 Ω.

[0039] Preferably, the reticulation layer 3 is made by a UV transfer printing process, and the reticulation layer 3 is composed of a polyurethane acrylate resin, an acrylate monomer, and a photoinitiator with a mass ratio of 25-35:55-65:3-8.

[0040] Preferably, the reticulation layer 3 is provided with micro-reticulations 8, and the micro-reticulations 8 form a grid structure. The micro-reticulations 8 are parallelogram structures with a side length of 100 μm to 1000 μm, and the interior angle range of the parallelogram structure is 30° to 150°.

[0041] Preferably, the cross-section of the micro-reticulation 8 is in an inverted T-shaped structure. The bottom width of the cross-section of the micro-reticulation 8 is 10 μm to 200 μm, the height is 3 μm to 50 μm, and the top width of the cross-section of the micro-reticulation 8 is less than the bottom width.

[0042] Preferably, the chamfer structure 7 is located between the top and the root of the cross-section of the micro-reticulation 8, and the angle range of the chamfer structure 7 is 100° to 170°.

[0043] Preferably, the material of the base film layer 4 is one of PET, PBT, PI, PEEK, CPP, and BOPP.

[0044] Preferably, the UV transfer printing process of the reticulation layer 3 is as follows: First, use a mold to form a micro-reticulation 8 with UV glue to form a grid structure, then transfer it to the surface of the base film layer 4, and then form the reticulation layer 3 after curing by ultraviolet radiation.

[0045] The mass ratio of the silicone release agent, the antistatic agent, and the modifier is 95 to 99: 1 to 5: 0.4 to 0.6, and the coating amount is 0.1 g / m 2 ~2 g / m 2 , where the mass number of the silicone release agent can be 95, 97, 99, the mass number of the antistatic agent can be 1, 3, 5, the mass number of the modifier can be 0.4, 0.5, 0.6, and the coating amount can be 0.1 g / m 2 、1.05 g / m 2 、2 g / m 2 .

[0046] The coating amount of the antistatic layer 2 is 0.5 g / m 2 ~1 g / m 2 , and the surface resistance value is 10 6 Ω~10 9 Ω, where the coating amount can be 0.5 g / m 2 、0.75 g / m 2 、1 g / m 2 , and the surface resistance value can be 10 6 Ω、10 7 Ω、10 8 Ω、10 9 Ω.

[0047] The reticulation layer 3 is composed of a polyurethane acrylate resin, an acrylate monomer, and a photoinitiator with a mass ratio of 25 to 35: 55 to 65: 3 to 8. Among them, the mass number of the polyurethane acrylate resin can be 25, 30, 35, the mass number of the acrylate monomer can be 55, 60, 65, and the mass number of the photoinitiator can be 3, 5.5, 8.

[0048] The micro-reticulation 8 has a parallelogram structure with side lengths ranging from 100 μm to 1000 μm, and the interior angles of the parallelogram structure range from 30° to 150°. Among them, the side lengths of the parallelogram structure can be 100 μm, 550 μm, and 1000 μm, and θ1 of the parallelogram structure can be from 30° to 90°. The adjacent angle θ2 corresponding to θ1 is 90° to 150°. When θ1 is 30°, θ2 is 150°; when θ1 is 60°, θ2 is 120°; when θ1 is 90°, θ2 is 90°.

[0049] The bottom width of the cross-section of the micro-reticulation 8 is 10 μm to 200 μm, and the height is 3 μm to 50 μm. Among them, the bottom width can be 10 μm, 105 μm, and 200 μm, and the height can be 3 μm, 26.5 μm, and 50 μm.

[0050] The angle range of the chamfer structure 7 is 100° to 170°, and it can be 100°, 135°, and 170°.

[0051] Temperature resistance test of UV process and PE film laminating process:

[0052] 1. Sample preparation

[0053] UV process sample group:

[0054] Base film selection: PET film (thickness 50 μm).

[0055] Preparation of reticulation layer:

[0056] UV glue formula: 30 parts of polyurethane acrylate resin, 60 parts of acrylate monomer, and 5 parts of photoinitiator.

[0057] Transfer mold parameters: L = 500 μm, W1 = 30 μm, W2 = 80 μm, θ1 = 60°, θ2 = 120°, R = 135°.

[0058] UV curing energy: 800 mJ / cm 2 (wavelength 365 nm).

[0059] Hardness of the reticulation layer after curing: 3H (Determination of film hardness by pencil method for paints and varnishes - GB / T 6739-2006).

[0060] PE film laminating process sample group:

[0061] Base film selection: The same as PET film (thickness 50 μm).

[0062] Preparation of reticulation layer:

[0063] The PE coating layer (with a thickness of 20 μm) forms a grid structure with the same geometric parameters (L = 500 μm, W1 = 30 μm, W2 = 80 μm) through the calendering process.

[0064] Calendering temperature: 120 °C, pressure 5 MPa.

[0065] 2. High-temperature deformation test method

[0066] Test equipment: Constant-temperature oven (accuracy ±1 °C), tension controller (tension setting 10 N / m).

[0067] Test conditions:

[0068] Fix two groups of samples on the tension rollers and apply a constant tension (10 N / m).

[0069] Keep them in an environment of 130 °C and 150 °C for 30 minutes respectively.

[0070] Deformation evaluation:

[0071] Use an optical microscope (Keyence VHX-7000) to measure the deviation rate of the grid geometric parameters (L, W1, W2).

[0072] Deformation rate calculation formula:

[0073] Deformation rate = (parameter after test - initial parameter) × 100%

[0074] Determination of deformation rate collapse: The height H1 of the reticulation line drops by ≥10% or the top edge width W1 expands by ≥15%.

[0075] 3. Test results

[0076]

[0077] 4. Data analysis

[0078] Advantages of the UV process in heat resistance:

[0079] After photo-curing, the UV glue forms a cross-linked network structure (Tg ≥ 150 °C). At high temperatures, the movement of molecular chains is restricted, and the geometric stability is significantly better than that of the thermoplastic PE layer.

[0080] At 150 °C, the deformation rate of the UV reticulation is only 2.5%, while the reticulation of the PE coating collapses due to melt flow.

[0081] It should be noted that when a component is said to be "connected" to another component, it can be directly connected to the other component or there may be an intermediate component. When a component is considered to be "set on" another component, it can be directly set on the other component or there may be an intermediate component at the same time.

[0082] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and / or" as used herein includes any and all combinations of one or more of the related listed items.

[0083] In summary, the above are only the preferred embodiments of the present invention, and all equivalent changes and modifications made within the scope of the patent application of the present invention shall fall within the scope covered by the present invention.

Claims

1. A double-sided antistatic mesh release film, comprising a protective layer (1), an antistatic layer (2), a textured layer (3), a base film layer (4), a pressure-sensitive adhesive layer (5), and a separation layer (6) connected in sequence, characterized in that: The protective layer (1) and the separation layer (6) are both added with antistatic agents and modifiers, the textured layer (3) is provided with a chamfer structure (7), and the base film layer (4) is made of high temperature resistant material.

2. The double-sided antistatic mesh release film according to claim 1, characterized in that: The protective layer (1) and the separation layer (6) are both made by coating an organic silicon release agent with an antistatic agent and a modifier, wherein the mass ratio of the organic silicon release agent, the antistatic agent, and the modifier is 95-99:1-5:0.4-0.6, and the coating amount is 0.1 g / m 2 ~2g / m 2 .

3. The double-sided antistatic mesh release film according to claim 1, characterized in that: The antistatic layer (2) is made by coating an antistatic agent whose main component is a polythiophene conductive polymer, and the coating amount is 0.5 g / m 2 ~1g / m 2 The surface resistance of the antistatic layer (2) is 10 6 Ω~10 9 Ω.

4. The double-sided antistatic mesh release film according to claim 1, characterized in that: The textured layer (3) is made by UV transfer technology, and the textured layer (3) is composed of polyurethane acrylic resin, acrylate monomer, and photoinitiator in a mass ratio of 25-35:55-65:3-8.

5. The double-sided antistatic mesh release film according to claim 1, characterized in that: The textured layer (3) is provided with micro-textures (8), the micro-textures (8) are combined to form a grid structure, the micro-textures (8) are parallelogram structures with a side length of 100 μm to 1000 μm, and the internal angle range of the parallelogram structure is 30° to 150°.

6. The double-sided antistatic mesh release film according to claim 5, characterized in that: The cross section of the micro-reticular pattern (8) is an inverted T-shaped structure, the bottom width of the cross section of the micro-reticular pattern (8) is 10 μm to 200 μm, the height is 3 μm to 50 μm, and the top width of the cross section of the micro-reticular pattern (8) is smaller than the bottom width.

7. The double-sided antistatic mesh release film according to claim 6, characterized in that: The chamfered structure (7) is located between the top and the root of the cross section of the micro-reticular pattern (8), and the angle range of the chamfered structure (7) is 100° to 170°.

8. The double-sided antistatic mesh release film according to claim 1, characterized in that: The material of the base film layer (4) is one of PET, PBT, PI, PEEK, CPP and BOPP.

9. The double-sided antistatic mesh release film according to claim 4, characterized in that: The UV transfer process of the textured layer (3) is as follows: first, UV glue is made into a micro-texture (8) using a mold to form a grid structure, then transferred to the surface of the base film layer (4), and then cured by ultraviolet radiation to form the textured layer (3).

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