Electron bombardment ultraviolet detection imaging method and device
Through the electron bombardment ultraviolet detection imaging method, combined with the multi-stage photoelectric gain mechanism of back-illuminated low-noise CMOS and the cellular microchannel plate, the problem of difficult to take into account in the existing technology is solved, and high-quality ultraviolet imaging and anti-interference capabilities are achieved to meet the accurate identification needs in complex scenarios.
Patent Information
- Application Number
- CN202510206014.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-25
- Publication Date
- 2025-06-13
AI Technical Summary
Existing ultraviolet imaging devices are difficult to balance high sensitivity and low noise, have weak anti-interference capabilities, and insufficient image clarity, which cannot meet the requirements of accurate identification in complex scenarios.
The electron bombardment ultraviolet detection imaging method is adopted to achieve signal amplification and noise suppression through the back-illuminated low-noise CMOS and the multi-stage photoelectric gain mechanism of cellular microchannel plates. Combined with ultraviolet lenses, electron bombardment principles, ultraviolet spectral filters and high-speed CCD or CMOS sensors, improve image quality and anti-interference ability.
It achieves a balance between high sensitivity and low noise, improves image quality and anti-interference ability, and meets the requirements of accurate identification in complex scenarios.
Smart Images
Figure CN120141650A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of ultraviolet imaging technology, and particularly to an electron bombardment ultraviolet detection imaging method and device. Background Art
[0002] With high sensitivity to short-wave radiation, ultraviolet imaging technology plays a key role in many important fields. In flame detection, it can quickly detect fire hazards and issue alarms in a timely manner; in gas leak detection, it can accurately locate the leak source to ensure industrial production and environmental safety; in the field of high-temperature equipment detection, it helps to monitor the operation status of equipment in real time and prevent failures.
[0003] Currently, there are many deficiencies in the performance of existing ultraviolet imaging devices. In terms of the balance between high sensitivity and low noise, it is difficult to achieve both. High sensitivity often comes with high noise, which affects image quality; the anti-interference ability is weak, and it is easily interfered by external environmental factors, resulting in inaccurate imaging; the image clarity also needs to be improved, and it cannot meet the accurate recognition requirements of targets in complex scenarios. Summary of the Invention
[0004] In view of the deficiencies of the prior art, the present invention provides an electron bombardment ultraviolet detection imaging method and device, which solves the problems of many deficiencies in the performance of existing ultraviolet imaging devices. In terms of the balance between high sensitivity and low noise, it is difficult to achieve both. High sensitivity often comes with high noise, which affects image quality; the anti-interference ability is weak, and it is easily interfered by external environmental factors, resulting in inaccurate imaging; the image clarity also needs to be improved, and it cannot meet the accurate recognition requirements of targets in complex scenarios.
[0005] To achieve the above objectives, the present invention is realized through the following technical solutions: An electron bombardment ultraviolet detection imaging method and device, including a protective cover and a photocathode. A back-illuminated low-noise CMOS is provided at the bottom of the protective cover, an electron accelerator is provided at the bottom of the back-illuminated low-noise CMOS, and a fluorescent screen is provided inside the electron accelerator.
[0006] Preferably, a honeycomb microchannel plate is provided at the bottom of the photocathode, and an electron bombardment reflector is provided at the bottom of the honeycomb microchannel plate.
[0007] Preferably, an ultraviolet photon converter is fixedly connected to the bottom of the electron accelerator, and a focusing lens is threadedly connected to the bottom of the ultraviolet photon converter.
[0008] Preferably, an ultraviolet spectral filter lens is threadedly connected to the bottom of the focusing lens.
[0009] Preferably, a CMOS main board is provided at the bottom of the electron bombardment reflector.
[0010] Preferably, S1: Obtain ultraviolet signals
[0011] With the help of ultraviolet transmission materials, use an ultraviolet lens to obtain the ultraviolet signals of the target area. As a key component of the optical module, the ultraviolet lens is used to focus the ultraviolet light of the target area, enabling subsequent signal processing to more accurately target the information of the target area and ensuring that the collected ultraviolet signals have good directivity and focusing effects;
[0012] S2: Signal conversion
[0013] Use the principle of electron bombardment to convert ultraviolet signals into visible light signals. The specific process is as follows: Ultraviolet light irradiates the surface of the photocathode, photons are converted into electrons, and the electrons are accelerated by an electric field and then bombard the honeycomb microchannel plate. In the microchannels, the electrons accelerate and collide to generate more electrons, and these electrons are finally guided by the electric field and strike the light-emitting plate on the CMOS, realizing the conversion from electronic signals to optical signals. This process is the core conversion step of the entire imaging method, converting ultraviolet signals invisible to the human eye into visible light signals that are convenient for observation and processing;
[0014] S3: Signal amplification and noise reduction
[0015] During the signal conversion process, a multi-stage photoelectric gain mechanism is adopted. The collision of electrons in the honeycomb microchannel plate generates more electrons, which is itself a process of signal amplification. Moreover, this mechanism can suppress noise while amplifying weak signals. By selectively enhancing the signal and suppressing the noise, the quality of the signal is improved, laying a foundation for obtaining clear images subsequently;
[0016] S4: Signal acquisition and imaging
[0017] Use a high-speed CCD or CMOS sensor to collect the converted visible light signals. These sensors have the characteristics of high sensitivity and can accurately capture weak visible light signals. By processing the collected signals, high-resolution ultraviolet imaging is finally formed, presenting the ultraviolet information of the target area in the form of a clear image;
[0018] S5: Image processing and monitoring
[0019] Combine advanced image processing algorithms to denoise, enhance, and analyze the imaging data. Further remove interference factors in the image through denoising, enhance the details and contrast of the image, and then analyze the processed image to achieve real-time monitoring of the target area, providing valuable information for relevant application scenarios.
[0020] The present invention provides an electron bombardment ultraviolet detection imaging method and device. It has the following beneficial effects:
[0021] 1. The present invention uses a back-illuminated low-noise CMOS, and utilizes the multi-stage photoelectric gain mechanism of a honeycomb microchannel plate during the signal conversion process to suppress noise while amplifying weak signals, improving the problem that existing ultraviolet imaging devices are difficult to balance high sensitivity and low noise, and enhancing the image quality.
[0022] 2. The present invention can filter light outside a specific spectral range through an ultraviolet spectral filter lens, reducing interference from external stray light; the signal conversion process based on the principle of electron bombardment is carried out in a relatively closed structure, reducing the influence of external environmental factors on signal conversion and transmission to a certain extent, making the imaging more accurate.
[0023] 3. The present invention focuses the ultraviolet light in the target area through an ultraviolet lens to ensure the directivity and focusing effect of the collected signal; a high-speed CCD or CMOS sensor highly sensitively collects the converted visible light signal, and combines advanced image processing algorithms to denoise and enhance the imaging data, finally forming a high-resolution ultraviolet image to meet the precise recognition requirements of the target in complex scenarios. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 is a schematic diagram of the overall structure of the present invention;
[0025] Figure 2 is a schematic diagram of the overall structure of the photocathode of the present invention;
[0026] Figure 3 is a schematic diagram of the cross-section of the photocathode of the present invention.
[0027] Among them, 1. protective cover; 2. back-illuminated low-noise CMOS; 3. fluorescent screen; 4. electron accelerator; 5. ultraviolet photon converter; 6. focusing lens; 7. ultraviolet spectral filter lens; 8. photocathode; 9. honeycomb microchannel plate; 10. CMOS main board; 11. electron bombardment reflector. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0028] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.
[0029] Embodiment:
[0030] As Figures 1-3As shown in the figure, an electron bombardment ultraviolet detection imaging method and device are provided in an embodiment of the present invention, including a protective cover 1 and a photocathode 8. A back-illuminated low-noise CMOS 2 is provided at the bottom of the protective cover 1, an electron accelerator 4 is provided at the bottom of the back-illuminated low-noise CMOS 2, and a fluorescent screen 3 is provided inside the electron accelerator 4.
[0031] The above-mentioned parts are installed step by step according to the picture. The protective cover 1 not only plays a physical protection role, can prevent external impurities such as dust and moisture from entering the device interior, avoid damage to internal precision components, but also can reduce the influence of external electromagnetic interference on the device to a certain extent, ensuring the stable operation of the device. The back-illuminated low-noise CMOS 2 is installed at the bottom of the protective cover 1, and this CMOS sensor has unique advantages. The back-illuminated design enables it to make more full use of light, greatly improving the ability to capture weak light signals. At the same time, the low-noise characteristic effectively reduces the noise interference generated during signal acquisition, laying a solid foundation for obtaining high-quality image data. The electron accelerator 4 plays a crucial role in the whole device. It is internally provided with a fluorescent screen 3. When the electrons after a series of conversions hit the fluorescent screen 3, the energy carried by the electrons will excite the fluorescent screen to emit visible light signals. The electron accelerator 4 can make the electrons obtain sufficient energy by precisely controlling the electric field strength, ensuring that the electrons can effectively excite the fluorescent screen in the subsequent imaging process, guaranteeing the intensity and stability of the visible light signals, thereby improving the clarity and sensitivity of imaging.
[0032] A honeycomb microchannel plate 9 is provided at the bottom of the photocathode 8, and an electron bombardment reflector 11 is provided at the bottom of the honeycomb microchannel plate 9.
[0033] The photocathode 8 is located at a specific position in the device, and it is a key component for realizing the conversion of ultraviolet light to electrons. When ultraviolet light irradiates the surface of the photocathode 8, according to the photoelectric effect principle, photons will be absorbed by the photocathode and electrons will be excited. These electrons are the initial sources of subsequent imaging signals, and the quantity and quality of their generation directly affect the final imaging effect. The honeycomb microchannel plate 9 has a unique micro-structure, which consists of a large number of tiny channels. The electrons generated from the photocathode 8 enter the honeycomb microchannel plate 9 under the action of an electric field. Inside the microchannels, the electrons will continuously collide with the channel walls, and each collision will generate more electrons, which is the so-called secondary electron emission phenomenon. In this way, the honeycomb microchannel plate 9 can achieve the multiplication of the number of electrons, greatly enhancing the signal intensity and further improving the sensitivity of the device.
[0034] The electron accelerator 4 is fixedly connected to a bottom of an ultraviolet photon converter 5, and the ultraviolet photon converter 5 is threadedly connected to a focusing lens 6 at the bottom.
[0035] The ultraviolet photon converter 5 is responsible for the preliminary conversion and processing of the received ultraviolet light signal. It can effectively screen and focus ultraviolet light, improve the utilization rate of ultraviolet light, ensure that more ultraviolet light can accurately reach the subsequent optoelectronic conversion components, reduce signal loss, thereby enhancing the response ability of the entire device to ultraviolet light. The threaded connection design facilitates the installation and disassembly of the focusing lens 6. During actual use, users can flexibly adjust the position of the focusing lens 6 according to different detection requirements and target distances to achieve clear imaging of the target area. The focusing lens 6 can precisely control the focusing position of light, enabling ultraviolet light to form a clear image on the imaging surface and ensuring that the acquired image has high resolution and clarity.
[0036] The bottom of the focusing lens 6 is threadedly connected with an ultraviolet spectral filter lens 7.
[0037] The ultraviolet spectral filter lens 7 can selectively transmit ultraviolet light within a specific wavelength range according to the requirements of the actual application scenario and block the interference of light with other wavelengths. For example, in some industrial inspection scenarios, only the ultraviolet light signal of a specific wavelength needs to be detected to determine whether there are defects in the product. At this time, the ultraviolet spectral filter lens 7 can play a role in filtering out unnecessary stray light and improving the accuracy and reliability of the detection.
[0038] The bottom of the electron bombardment reflector 11 is provided with a CMOS main board 10.
[0039] The CMOS main board 10 is the data processing core of the entire device. It is responsible for receiving the electrical signals collected by the CMOS sensor (i.e., the back-illuminated low-noise CMOS2) and performing a series of processing and conversions on these electrical signals, ultimately generating digital image data that can be displayed and analyzed. The CMOS main board 10 integrates complex circuits and processing chips internally and has powerful data processing capabilities. It can perform processing operations such as denoising and enhancement on the image data to further improve the quality of the image and provide clear and accurate image information for subsequent target recognition and analysis.
[0040] S1. Obtain ultraviolet signals
[0041] With the help of ultraviolet transmission materials, an ultraviolet lens is used to obtain the ultraviolet signal of the target area. As a key component of the optical module, the ultraviolet lens is used to focus the ultraviolet light of the target area, enabling subsequent signal processing to more precisely target the information of the target area and ensuring that the acquired ultraviolet signal has good directivity and focusing effect;
[0042] S2. Signal conversion
[0043] The ultraviolet signal is converted into a visible light signal by using the principle of electron bombardment. The specific process is as follows: ultraviolet light irradiates the surface of the photocathode, photons are converted into electrons, and the electrons are accelerated by an electric field and then bombard the honeycomb microchannel plate. In the microchannels, the electrons accelerate and collide to generate more electrons, and these electrons, under the guidance of the electric field, finally strike the light-emitting plate on the CMOS, realizing the conversion from an electronic signal to an optical signal. This process is the core conversion step of the entire imaging method, converting the ultraviolet signal invisible to the human eye into a visible light signal that is convenient for observation and processing;
[0044] S3. Signal amplification and noise reduction
[0045] In the process of signal conversion, a multi-stage photoelectric gain mechanism is adopted. The electrons collide in the honeycomb microchannel plate to generate more electrons, which is itself a process of signal amplification. Moreover, this mechanism can suppress noise while amplifying weak signals. By selectively enhancing the signal and suppressing the noise, the quality of the signal is improved, laying a foundation for obtaining clear images subsequently;
[0046] S4. Signal acquisition and imaging
[0047] The converted visible light signal is acquired by using a high-speed CCD or CMOS sensor. These sensors have the characteristic of high sensitivity and can accurately capture weak visible light signals. By processing the acquired signals, high-resolution ultraviolet imaging is finally formed, presenting the ultraviolet information of the target area in the form of a clear image;
[0048] S5. Image processing and monitoring
[0049] Combined with advanced image processing algorithms, the imaging data is denoised, enhanced, and analyzed. By denoising, the interference factors in the image are further removed, the details and contrast of the image are enhanced, and then the processed image is analyzed, so as to realize the real-time monitoring of the target area and provide valuable information for relevant application scenarios.
[0050] Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principle and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. An electron bombardment ultraviolet detection imaging device, comprising a protective cover (1) and a photocathode (8), characterized in that: A back-illuminated low-noise CMOS (2) is arranged at the bottom of the protective cover (1), an electron accelerator (4) is arranged at the bottom of the back-illuminated low-noise CMOS (2), and a fluorescent screen (3) is arranged inside the electron accelerator (4).
2. The electron bombardment ultraviolet detection imaging device according to claim 1, characterized in that: A honeycomb microchannel plate (9) is arranged at the bottom of the photocathode (8), and an electron bombardment reflector (11) is arranged at the bottom of the honeycomb microchannel plate (9).
3. The electron bombardment ultraviolet detection imaging device according to claim 2, characterized in that: The bottom of the electron accelerator (4) is fixedly connected to an ultraviolet photon converter (5), and the bottom of the ultraviolet photon converter (5) is threadedly connected to a focusing lens (6).
4. The electron bombardment ultraviolet detection imaging device according to claim 3, characterized in that: The bottom of the focusing lens (6) is threadedly connected with an ultraviolet spectrum filter (7).
5. The electron bombardment ultraviolet detection imaging device according to claim 2, characterized in that: A CMOS mainboard (10) is arranged at the bottom of the electron bombardment reflector (11).
6. The electron bombardment ultraviolet detection imaging method according to claim 1, characterized in that: The steps include: S1. Obtaining UV signal With the help of ultraviolet transmissive materials, ultraviolet lenses are used to obtain ultraviolet signals in the target area. As a key component of the optical module, the ultraviolet lens focuses the ultraviolet light in the target area, allowing subsequent signal processing to more accurately target the information of the target area and ensure that the collected ultraviolet signal has good directivity and focusing effect; S2. Signal conversion The principle of electron bombardment is used to convert ultraviolet signals into visible light signals. The specific process is that ultraviolet light irradiates the surface of the photocathode, photons are converted into electrons, and the electrons are accelerated by the electric field and bombard the honeycomb microchannel plate. In the microchannel, electrons accelerate and collide to produce more electrons. These electrons, under the guidance of the electric field, eventually hit the light-emitting plate on the CMOS, realizing the conversion of electronic signals to light signals. This process is the core conversion step of the entire imaging method, which converts ultraviolet signals that are invisible to the human eye into visible light signals that are easy to observe and process. S3, signal amplification and noise reduction In the process of signal conversion, a multi-level photoelectric gain mechanism is used. Electrons collide in the honeycomb microchannel plate to produce more electrons, which is itself a signal amplification process. Moreover, this mechanism can suppress noise while amplifying weak signals. By selectively enhancing the signal and suppressing the noise, the signal quality is improved, laying the foundation for subsequent clear imaging; S4. Signal acquisition and imaging Use high-speed CCD or CMOS sensors to collect the converted visible light signals. These sensors have high sensitivity and can accurately capture weak visible light signals. By processing the collected signals, high-resolution ultraviolet imaging is finally formed, presenting the ultraviolet information of the target area in the form of a clear image; S5. Image processing and monitoring Combined with advanced image processing algorithms, the imaging data is denoised, enhanced and analyzed. Denoising further removes interference factors in the image, enhances image details and contrast, and then analyzes the processed image to achieve real-time monitoring of the target area and provide valuable information for related application scenarios.