Composite electrode, humidity detection chip and packaging method and application thereof

Abstract

The invention provides a composite electrode, a humidity detection chip and a packaging method and application of the humidity detection chip. The humidity detection chip comprises an n-Si layer, a CsPb (0.25-1) Br (1.5-3) layer and an Ag layer which are sequentially arranged from bottom to top. The preparation method comprises the steps of etching n-Si, preparing a CsPbBr3 precursor solution, preparing an n-Si / CsPbBr3 layer, preparing an n-Si / CsPbBr3 / Ag structure, and preparing the composite electrode. When the humidity detection electrode is used for humidity detection, n-Si and CsPb (0.25-1) Br (1.5-3) in the electrode form a heterojunction, so that the carrier movement is greatly enhanced; csPb (0.25-1) Br (1.5-3) has excellent humidity sensing property; the rising response time of the electrode to humidity detection is 16 ms, and the falling response time of the electrode to humidity detection is 25 ms. The humidity detection chip provided by the invention can be integrated in equipment to realize real-time detection of humidity.

Description

Technical Field

[0001] The present invention belongs to the fields of integrated devices and optoelectronic materials, and particularly relates to a composite electrode, a humidity detection chip, and a packaging method and application thereof. Background Art

[0002] Perovskite materials have characteristics such as high defect tolerance, flexible and adjustable band gaps, and low processing costs. Their structural general formula is: ABX 3 (The A site is generally an organic cation such as cesium ion (Cs + ), methylammonium ion (MA + ), etc., the B site is generally a divalent metal cation such as lead ion (Pb 2+ ), tin ion (Sn 2+ ), etc., and the X site is generally a halogen element ion, such as iodide ion (I - ), bromide ion (Br - ), chloride ion (Cl - ). The research and development of perovskite materials have been from 0D quantum dots to 1D nanowires, then to 2D thin films and 3D single crystals. Their application directions cover solar cells to derivative sensor devices based on photodetectors, such as humidity sensors. Humidity sensors are electronic devices that reflect the humidity in the environment through the change of electrical signals in the corresponding devices under different humidities, and play a very important role in daily life, industry, and scientific research, such as humidity monitoring in "intelligent greenhouses", humidity detection in industrial equipment environments, and weather forecasting.

[0003] The main technology of perovskite humidity sensors is to utilize the sensitivity of perovskite materials to water and the excellent optical response performance of the devices to study the performance and application value of various perovskite materials in a humidity environment. All-inorganic perovskite materials have high carrier mobility and diffusion length and are widely used in electronic devices. Humidity detection has great application potential in daily life, industrial production, aerospace, etc. General perovskite materials are extremely easy to decompose when encountering water and have poor thermal stability, and cannot be used for humidity monitoring research for a long time and multiple times, resulting in high large-scale production costs. Compared with other perovskite materials, CsPb (0.25~1) Br (1.5~3) has higher humidity stability and greater application potential in the field of humidity sensors.

[0004] In the literature "Growth and optoelectronic application of thin films deposited by pulsed-laser deposition" (Optics Letters. 44. 8. 1908 - 1911 (2019)), a method of depositing CsPbBr by pulsed laser deposition is introduced.3 Optoelectronic applications and preparation methods of thin films, including an Si substrate, CsPbBr 3 , and silver electrodes. A heterojunction is formed between Si and CsPbBr 3 . Among them, Si and CsPbBr 3 are connected by Si-Pb covalent bonds, and a metal-semiconductor contact is formed between the silver electrode and CsPbBr 3 . The Br-Pb bond length in CsPbBr 3 is 2.80 Å to form diode rectification characteristics. The results show that the on-off ratio of the device is about 168.50 times, and the responsivity is 0.60 A / W. Compared with the sensors prepared by the solution method, its on-off ratio is lower and the responsivity is poorer.

[0005] In the literature "High-performance CsPbBr 3 -silicon heterojunction photodetectors fabricated by chemical vapor deposition" (Phys. Scr. 99(2024)0659c3), a silicon-based photodetector prepared by chemical vapor deposition is introduced, including a gold electrode, CsPbBr 3 , and Si nanowires. Among them, Au and CsPbBr 3 are connected by Au-Pb covalent bonds, Si and CsPbBr 3 are connected by Si-Pb covalent bonds, and the Br-Pb bond length in CsPbBr 3 is about 2.80 Å. The results show that the rise response time of the device is 22 ms, and its response speed is slow. Summary of the Invention

[0006] Aiming at the problems existing in the above-mentioned prior art, the present invention provides a composite electrode, a humidity detection chip, its packaging method and application, realizing rapid response and multiple cyclic use in a specific humidity range.

[0007] To achieve the above object, a composite electrode adopted by the present invention includes an n-Si layer, CsPb (0.25~1) Br (1.5~3) layer and an Ag layer arranged in sequence from bottom to top;

[0008] The thickness of the n-Si layer is 0.80 - 1.00 mm, and the surface roughness is 0.20 - 0.25 μm;

[0009] The CsPb (0.25~1) Br (1.5~3)The thickness of the layer is 500 - 1200 nm, and the CsPb (0.25~1) Br (1.5~3) layer is composed of a mixed cubic and elliptical unit cell. The CsPb (0.25~1) Br( 1.5~3) layer is connected to the n-Si layer through Si-Pb covalent bonds;

[0010] The thickness of the Ag layer is 90 - 110 nm, and the Ag layer and the CsPb (0.25~1) Br (1.5~3) layer are bonded through Br-Ag ionic bonds.

[0011] As an improvement, the atoms in the CsPb (0.25~1) Br (1.5~3) layer are bridged by ionic bonds formed between Br - at the face center and Cs + . The CsPb (0.25~1) Br (1.5~3) layer is connected through Br-Cs bonds and Br-Pb bonds inside. The Br-Cs bond length is 3.50 - 4.00 Å, and the Br-Pb bond length is 2.50 - 3.00 Å.

[0012] In the second aspect of the present invention, a method for preparing the composite electrode is further provided, including the following steps:

[0013] 1) Etching n-Si: Cut the n-Si into a substrate with a length of 1.50 - 2.50 cm and a width of 1.20 - 1.70 cm. After cleaning and drying, etch and polish the surface for 8 - 12 min to obtain n-Si without SiO 2 ;

[0014] 2) Preparing the CsPbBr 3 precursor solution: Dissolve 0.37 - 0.74 g of PbBr 2 powder in 0.80 - 1.00 mL of N-N dimethylformamide and heat and dissolve it at 90 - 100 °C for 3 - 5 h; Dissolve 0.15 - 0.26 g of CsBr powder in 0.80 - 1.00 mL of methanol and heat and dissolve it at 55 - 65 °C for 3 - 4 h;

[0015] 3) Preparing the n-Si / CsPbBr 3 layer: Through a two-step spin-coating method, first spin-coat the PbBr 2 solution at 90 - 100 °C onto the n-Si at a rotation speed of 1700 - 2500 r / min, and then spin-coat the CsBr solution at 55 - 65 °C onto the PbBr 2 to prepare the CsPbBr 3 thin film;

[0016] 4) Preparation of n-Si / CsPbBr 3 / Ag structure: Set the evaporation power to 70 - 90 kW / h and the rotation speed to 2000 - 3000 r / min, and deposit an Ag layer on the surface of the CsPbBr 3 film;

[0017] 5) Preparation of the composite electrode: In a closed environment at 15 - 25 °C with a concentration of 0.014 - 0.016 m 3 Set the constant humidity environment to 20% - 70% RH, and place it in the humidity environment for 15 - 20 min to form a composite electrode with an n-Si / CsPb (0.25~1) Br (1.5~3) / Ag layer.

[0018] In the third aspect of the present invention, a humidity detection electrode is further provided, which includes a positive electrode and a negative electrode. The positive electrode adopts the composite electrode obtained by the above-mentioned composite electrode or the preparation method, and the negative electrode adopts any one of metal tungsten, brass, and palladium alloy.

[0019] In the fourth aspect of the present invention, a humidity detection chip is further provided, which includes:

[0020] A humidity sensing module, which is located on the top layer of the chip. The humidity sensing module is connected to the AD conversion unit in the signal processing module in the lower layer, and is used to receive the electrical signal detected by the positive electrode in the humidity detection electrode and the temperature signal detected by the temperature sensor, and apply a bias voltage to the humidity detection electrode. The collected electrical signal is transmitted to the AD conversion unit in the signal processing module through the humidity sensing module;

[0021] A signal processing module, which includes an AD conversion unit and a data processing unit. The signal processing module is located below the humidity sensing module and above the low-pass filtering module. The AD conversion unit is used to convert the continuous analog signal transmitted by the humidity sensing module into a digital signal, and then send the digital signal to the data processing unit for screening, smoothing processing, and temperature compensation;

[0022] A low-pass filtering module, which is located below the signal processing module and above the base, and is used to receive the preliminarily processed signal transmitted by the data processing unit and filter the positive electrode signal collected by the humidity sensing module transmitted by the data processing unit;

[0023] A wireless transmission module, which is located above the low-pass filtering module and on one side of the signal processing module, and is used to transmit the data result processed by the low-pass filtering module to a mobile device;

[0024] The power management module includes a power stabilizing unit and a level conversion unit. The power management module and the low-pass filtering module are located above the base in parallel and are used to supply power to the low-pass filtering module, the signal processing module and the wireless transmission module.

[0025] As an improvement, the power supply voltage stabilization unit is connected to the low-pass filtering module and the AD conversion unit for inputting a +5.0~+5.2 V voltage, and the level conversion unit is connected to the data processing unit and the wireless transmission module for inputting a +3.2~+3.4 V voltage.

[0026] A fifth aspect of the present invention further provides a method for packaging a humidity detection chip, based on the humidity detection chip, wherein the humidity detection chip adopts a 3D packaging method;

[0027] After packaging, the humidity detection chip is arranged in two columns, the upper layer of the left column is the humidity sensor module, the middle layer of the left column from front to back is the signal processing module and the wireless transmission module, the lower layer of the left column is the low-pass filter module, and the low-pass filter module is located on the upper left side of the base; the right column from front to back is the power supply stabilizing unit and the level conversion unit, and the power supply stabilizing unit and the level conversion unit are located on the upper right side of the base.

[0028] In a sixth aspect of the present invention, a working method of a humidity detection chip is further provided, wherein the humidity detection chip or the humidity detection chip manufactured by the packaging method comprises the following steps:

[0029] S1. The humidity detection chip performs a self-test after powering on. The data processing unit in the signal processing module reads the no-load readings of the humidity detection electrode and the temperature sensor of the humidity sensing module and determines whether the readings are normal. If the readings are abnormal, a warning signal is issued. If the readings are normal, the system enters the working mode.

[0030] S2, the humidity sensing module applies bias voltage to the positive electrode and receives humidity electrical signals and temperature electrical signals, and transmits them to the AD conversion unit in the signal processing module to convert the analog signals into digital signals;

[0031] S3, the AD conversion unit transmits the converted signal to the data processing unit for screening and smoothing, and when the temperature is between 15 and 25 °C, the data processing unit combines the humidity signal to perform temperature compensation on the humidity electrical signal and transmits the data to the low-pass filter module, otherwise the data processing unit directly sends the erroneous data to the wireless transmission module;

[0032] S4, the low-pass filtering module performs low-pass filtering on the signal input by the data processing unit, and transmits the processed data to the wireless transmission module;

[0033] S5. The wireless transmission module transmits the data to the mobile device wirelessly.

[0034] As an improvement, in step S3, when the humidity is 20% - 70% RH, the effective range of temperature compensation is 15 - 25 °C;

[0035] When the humidity sensing module detects that the temperature is between 15 - 25 °C, the data processing unit performs temperature compensation according to the temperature compensation formula: Perform temperature compensation;

[0036] Wherein, is the relative humidity; is the humidity compensation coefficient, with a value of 0.2 - 0.5; is the device resistance in the relative humidity environment; is the original resistance; is the temperature compensation coefficient, with a value of -0.005 - +0.005; is the initial ambient temperature.

[0037] In the seventh aspect of the present invention, there is also provided an application of a composite electrode or a humidity detection electrode or a humidity detection chip in humidity detection. The composite electrode is the composite electrode prepared by the above - mentioned or the preparation method, the humidity detection electrode is the humidity detection electrode described above, and the humidity detection chip is the humidity detection chip prepared by the above - mentioned or the encapsulation method.

[0038] The working principle of the composite electrode of the present invention is:

[0039] As Figure 11 shown, for the n - Si / CsPbBr 3 / Ag composite electrode in a closed environment with 20% - 70% RH and 0.014 - 0.016 m 3 When the humidity is 20% - 70% RH, water molecules will increase the solubility of CsBr, thus reacting with part of CsPbBr 3 to generate a CsPb (0.25~1) Br (1.5~3) structure, as shown in Figure 4 (b) and Figure 4 (d); during annealing, water molecules evaporate, the solubility of CsBr decreases, and part of the Br - Pb in the PbBr 6 4- functional group breaks and reforms PbBr 3 - , while the free Br - re - combines with Cs + ions to form Br - Cs, causing the unit cell to contract, and part of CsPb (0.25~1) Br (1.5~3) is converted to CsPbBr 3 , as shown in Figure 4 (c) and Figure 4as shown in (e). The changes in the chemical bonds of the microstructure are as Figure 12 shown, with the Pb atom in the center of PbBr 3 - . When affected by humidity, Cs + and Br - concentrations increase, and Cs + diffuses into the PbBr 3 - crystal structure. The partial ionic bond of Br-Pb in PbBr 3 - is distorted. Br - combines with Pb 2+ under the concentration gradient to form Br-Pb, and the functional group changes from PbBr 3 - to PbBr 6 4- . The Br-Pb Å extends from the original 2.80 Å to 2.90 Å, and the bond angle remains at 90° or 180°. Cs + is located at the interstitial position of the PbBr 6 4- octahedron, playing a bridging role to isolate PbBr 6 4- from each other, forming a 0D structure. The isolation of PbBr 6 4- from each other will limit the movement of electrons in this structure, reducing the photocurrent, thus forming a decaying and recovering current effect, as shown in Figures 5 to 8. Therefore, it can be used to detect different humidities.

[0040] The original device does not contain CsPb (0.25~1) Br (1.5~3) . When placed in a humid environment, CsPb (0.25~1) Br (1.5~3) gradually appears. However, with further annealing, the CsPb (0.25~1) Br (1.5~3) peak weakens. When placed in a humid environment for the second time, the CsPb (0.25~1) Br (1.5~3) peak strengthens. After annealing again, the CsPb (0.25~1) Br (1.5~3) peak weakens, as Figure 1 shown. In addition, when affected by humidity, the intervention of water molecules reduces the electron cloud density around the Br atom, increases the binding energy of 3d orbital electrons, and reduces the ionic nature of the Br-Cs chemical bond; the covalent nature of the Br-Pb chemical bond is enhanced and moves towards lower binding energy, as shown in Figure 2(b); conversely, when annealed, the water molecule content decreases, the solubility of CsBr decreases, and PbBr 6 4-The ionic property between Br and Cs increases, the Br-Cs bond breaks, the bond length between Br and Pb shortens, and Br-Pb shifts towards a higher binding energy, as shown in Fig. 2(c).

[0041] From the perspective of the thin film, the surface morphology of the original thin film inevitably has defects and a 3D CsPbBr 3 cubic phase structure, as Figure 3 shown in (a); after being placed in a humid environment, the surface defects of the thin film decrease, a dense thin film is formed, and CsPb (0.25~1) Br (1.5~3) appears, as Figure 3 shown in (b); subsequently, after annealing, it can be observed that the dense thin film formed previously forms defects again and an obvious cubic phase CsPbBr 3 appears, as Figure 3 shown in (c); with the second exposure to the humid environment, it can be observed again that the defects contained in the thin film decrease and a dense thin film is formed, as Figure 3 shown in (d); after the second annealing, it can be observed again that the dense thin film has defects, as Figure 3 shown in (e). The local unit cells also show the same regular changes. An obvious cubic phase structure of CsPbBr 3 can be observed in the original thin film, as Figure 4 shown in (a); when exposed to a humid environment, a CsPb (0.25~1) Br (1.5~3) mixed phase of cubic and elliptical gradually forms, as Figure 4 shown in (b) and Fig. 4(d); after annealing, the elliptical phase of CsPb (0.25~1) Br (1.5~3) gradually decreases, and CsPbBr 3 increases, as Figure 4 shown in (c) and Fig. 4(e).

[0042] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0043] 1) Compared with a silicon-based photodetector fabricated by a chemical vapor deposition method introduced in the literature "High-performance CsPbBr 3 -silicon heterojunctionphotodetectors fabricated by chemical vapor deposition" (Phys.Scr.99(2024)0659c3), the composite electrode fabricated by the solution spin-coating method used in the present invention has a faster response speed. The response time of the electrode in the literature is 22 ms. When the humidity detection electrode of the present invention performs humidity detection, n-Si and CsPb in the electrode(0.25~1) Br (1.5~3) forms a heterojunction, greatly enhancing the carrier mobility. CsPb (0.25~1) Br (1.5~3) has excellent hygroscopicity. The rising response time of this electrode for humidity detection is 16 ms, and the falling response time is 25 ms. As shown in Figure 9.

[0044] 2) Using n-Si / CsPb (0.25~1) Br (1.5~3) / Ag as the positive electrode, the on-off ratio of the humidity detection electrode is 1283 times, having a higher photocurrent response compared to the above-mentioned literature (168.5 times).

[0045] 3) The humidity detection chip of the present invention adopts a 3D chip packaging method, greatly reducing the chip volume while reducing the chip power consumption.

[0046] 4) The humidity detection chip of the present invention has a temperature compensation function, minimizing the influence of temperature on the detection result.

[0047] 5) The humidity detection chip of the present invention can be integrated into devices, thus being applied to artificial intelligence technology equipment to achieve real-time detection of ecological-related data, especially humidity. Brief Description of the Drawings

[0048] Figure 1 XRD pattern of the phase change of the CsPb (0.25~1) Br (1.5~3) film prepared by the present invention when exposed to a humidity environment and in the annealed state;

[0049] Figure 2 is the XPS (X-ray photoelectron spectroscopy) spectrum of Br 3d, indicating that during the cycle of humidity and annealing states, the Br 3d hybrid orbitals change regularly; Figure 2 (a) is the original state, 2 (b) is the humidity state, and 2 (c) is the annealed state;

[0050] Figure 3 SEM images of the changes of the CsPb (0.25~1) Br (1.5~3) film prepared by the present invention when exposed to a humidity environment and in the annealed state during multiple cycles;

[0051] Figure 4 SEM images of the unit cell changes of the CsPb (0.25~1) Br (1.5~3) film prepared by the present invention when exposed to a humidity environment and in the annealed state during multiple cycles;

[0052] Figures 5 - 8The cyclic voltammetry characteristic curves of the composite electrode prepared according to the present invention under the irradiation of a laser with a wavelength of 520 nm, after being annealed for 20 - 30 min at 40 - 60 °C in a humidity environment of 20% - 70% RH for four times;

[0053] Figure 9 The time - voltage normalized comparison diagram of different substrates obtained by the composite electrode prepared according to the present invention under a sine wave of 20 Hz;

[0054] Figure 10 The comparison diagram of the energy band diagrams of the materials required for the composite electrode prepared according to the present invention;

[0055] Figure 11 The preparation process diagram of the composite electrode of the present invention;

[0056] Figure 12 For the n - Si / CsPb (0.25~1) Br (1.5~3) / Ag composite electrode prepared according to the present invention, the humidity reaction mechanism diagram;

[0057] Figure 13 For the n - Si / CsPb (0.25~1) Br (1.5~3) / Ag composite electrode prepared according to the present invention, the diagram of the change process of the microscopic atomic chemical bonds in the humidity reaction;

[0058] Figure 14 The working flow chart of the humidity detection electrode of the present invention;

[0059] Figure 15 The temperature compensation diagram of the data processing unit in the humidity detection electrode of the present invention, showing a linear change trend;

[0060] Figure 16 The 3D packaging structure of the humidity detection chip prepared according to the invention;

[0061] Figure 17 The specific pin schematic diagram of the humidity sensing module;

[0062] Figure 18 The specific pin schematic diagram of the wireless transmission module, data processing unit, and AD conversion unit;

[0063] Figure 19 The specific pin schematic diagram of the low - pass filter module;

[0064] Figure 20 The specific pin schematic diagram of the level conversion unit and power supply voltage stabilization unit;

[0065] Figure 21 The schematic diagram of the specific solder ball pins on the base;

[0066] Figure 22 Schematic diagram of the pins of the humidity detection chip. Specific implementation mode

[0067] The following embodiments are further descriptions of the present invention to elaborate on the technical content of the present invention. However, the substantial content of the present invention is not limited to what is described in the following embodiments. Those of ordinary skill in the art can and should know that any simple changes or substitutions based on the substantial spirit of the present invention should fall within the scope of protection required by the present invention.

[0068] Example 1

[0069] A preparation method of a composite electrode, comprising the following steps:

[0070] 1) Prepare an n-Si substrate: Cut the n-Si into a substrate with a length of 2.00 cm and a width of 1.50 cm, ultrasonically clean it with deionized water, acetone, and ethanol for 15 min respectively, and dry the n-Si; then, adjust the power to 55 W, and under the condition of turning on argon, continuously etch for 8 min, and take it out for standby;

[0071] 2) Prepare the n-Si / CsPbBr 3 / Ag layer: Ozone-treat the n-Si substrate in step 1) for 8 min to increase the hydrophilicity of the substrate;

[0072] Dissolve 0.37 g of PbBr 2 powder in 1.00 mL of N-N dimethylformamide and heat it to dissolve for 3 h at 90 °C. Dissolve 0.15 g of CsBr powder in 1.00 mL of methanol and heat it to dissolve for 3 h at 65 °C. Then adjust the rotation speed to 1700 r / min, the coating time to 30 s, and the acceleration to 1000 m / s 2 , spin-coat the PbBr 2 solution onto the n-Si substrate, and then anneal the device containing the PbBr 2 solution at 90 °C for 45 min; then adjust the rotation speed to 1000 r / min, the coating time to 30 s, and the acceleration to 1000 m / s 2 , spin-coat the CsBr solution onto the PbBr 2 film, then place the device on the table to cool for 5 min, then anneal it at 230 °C for 5 min, and finally place it on the table to cool for 5 min again. Repeat the operation 6 times (the repeated operation steps: spin-coat the CsBr solution onto the PbBr 2 film, then cool for 5 min, then anneal at 230 °C for 5 min, and cool again for 5 min), to obtain the n-Si / CsPb 0.25 Br 1.5 sensing layer;

[0073] 3) Preparation of n-Si / CsPbBr 3 / Ag structure: Set the evaporation power to 80 kW / h and the rotation speed to 2500 r / min, and deposit an Ag layer on the surface of the CsPbBr 3 film;

[0074] 4) Preparation of n-Si / CsPb 0.25 Br 1.5 / Ag composite electrode: In a closed environment at 24 °C with a humidity of 55% RH, place the n-Si / CsPbBr 3 / Ag in the environment to sense humidity for 15 min to form a CsPb 3 structure, and obtain the n-Si / CsPb 0.25 Br 1.5 / Ag composite electrode. The preparation process is as Figure 11 shown. The prepared n-Si / CsPb 0.25 Br 1.5 / Ag composite electrode mainly contains elements Si, Cs, Pb, Br, and Ag, and the mass percentages of each element are Si = 25%, Cs = 20%, Pb = 10%, Br = 20%, and Ag = 15%. 0.25 Br 1.5 The specific structure of the composite electrode is as follows:

[0075] The thickness of the n-Si layer is 1 mm, and the surface roughness is 0.23 μm;

[0076] The thickness of the CsPb

[0077] Br 0.25 layer is 1200 nm. The CsPb 1.5 Br 0.25 layer is located above the n-Si layer and is connected to the n-Si layer through Si-Pb covalent bonds. As 1.5 shown, CsPbBr Figure 3 exhibits a cubic phase structure, and CsPb 3 Br 0.25 exhibits a mixed cubic and elliptical phase structure, with good humidity sensitivity; 1.5 The thickness of the Ag layer is 110 nm, and Ag and CsPb

[0078] Br (0.25~1) are bonded through Br-Ag ionic bonds between the layers. (1.5~3) Test conditions and test methods:

[0079] Place the n-Si / CsPb

[0080] Br 0.25 / Ag 1.5The / Ag composite electrode was placed in a dark environment and irradiated with a 520 nm laser, and the current was measured and recorded; then, the exposed device was annealed at 55 °C for 20 min and then placed in a dark environment and irradiated with a 520 nm laser to measure and record the current. The current recording is as Figures 5 - 8 shown;

[0081] Figure 5 Figure Figures 5 - 8 is the current change diagram after the first exposure to humidity and annealing treatment, showing overall humidity-induced current decay and annealing-induced current recovery;

[0082] Figure 6 Figure is the current change diagram after the second exposure to humidity and annealing treatment, still showing humidity-induced current decay and annealing-induced current recovery;

[0083] Figure 7 Figure is the current change diagram after the third exposure to humidity and annealing treatment, still showing humidity-induced current decay and annealing-induced current recovery;

[0084] Figure 8 Figure is the current change diagram after the fourth exposure to humidity and annealing treatment. At this time, annealing loses the effect of restoring the current.

[0085] As Figure 1 shown, when affected by humidity, the amount of CsPb (0.25~1) Br (1.5~3) increases, playing a major role in reducing the photocurrent. When annealed, the amount of CsPb (0.25~1) Br (1.5~3) decreases and the photocurrent is restored. As shown in Figure 2, the change in the humidity annealing cycle conditions brings about a change in the CsPb (0.25~1) Br (1.5~3) structure. Specifically, the binding energies of Br-Pb and Br-Cs change regularly. When affected by humidity, the bond lengths of Br-Pb and Br-Cs increase to form CsPb (0.25~1) Br (1.5~3) , and when annealed, the bond lengths of Br-Pb and Br-Cs are restored and CsPb (0.25~1) Br (1.5~3) disappears. Overall, it shows that the composite electrode of the present invention has the effect of being detectable in multiple cycles.

[0086] Example 2

[0087] A method for preparing a composite electrode, comprising the following steps:

[0088] 1) Prepare an n-Si substrate: Cut the n-Si into a substrate with a length of 2.00 cm and a width of 1.50 cm, ultrasonically clean it with deionized water, acetone, and ethanol for 30 min respectively, and dry the n-Si; then, adjust the power to 110 W, and under the condition of turning on argon, continuously etch for 10 min, and take it out for standby;

[0089] 2) Preparation of n-Si / CsPbBr 3 / Ag layer: The n-Si substrate in step 1) is treated with ozone for 16 min to increase the hydrophilicity of the substrate;

[0090] Dissolve 0.74 g of PbBr 2 powder in 1.00 mL of N-N dimethylformamide and heat it at 90 °C for 4 h to dissolve. Dissolve 0.26 g of CsBr powder in 1.00 mL of methanol and heat it at 65 °C for 4 h to dissolve. Then adjust the rotation speed to 1700 r / min, the coating time to 30 s, and the acceleration to 1200 m / s 2 , spin-coat the PbBr 2 solution onto the n-Si substrate, and then anneal the device containing the PbBr 2 solution at 90 °C for 60 min; then adjust the rotation speed to 1500 r / min, the coating time to 30 s, and the acceleration to 1200 m / s 2 , spin-coat the CsBr solution onto the PbBr 2 film, then place the device on the table to cool for 5 min, then anneal it at 250 °C for 7 min, and finally place it on the table to cool again for 7 min. Repeat the operation 8 times (repeat operation steps: spin-coat the CsBr solution onto the PbBr 2 film, then cool for 5 min, then anneal at 250 °C for 7 min, and cool again for 7 min), to obtain the n-Si / CsPb 1 Br 3 sensing layer;

[0091] 3) Preparation of n-Si / CsPbBr 3 / Ag structure: Set the evaporation power to 90 kW / h and the rotation speed to 3000 r / min, and deposit the Ag layer on the surface of the CsPbBr 3 film;

[0092] 4) Preparation of n-Si / CsPb 1 Br 3 / Ag composite electrode: In a closed environment at 24 °C with a humidity of 0.016 m 3 , set the constant humidity environment to 55% RH, place the n-Si / CsPbBr 3 / Ag in the environment to sense humidity for 15 min to form the CsPb 1 Br 3 structure, and obtain the n-Si / CsPb 1 Br 3 / Ag composite electrode. The preparation process is as shown in Figure 11 shown, and the prepared n-Si / CsPb 1Br 3 The Si / Cs / Pb / Br / Ag composite electrode mainly contains elements Si, Cs, Pb, Br, and Ag, and the mass percentages of each element are Si = 25%, Cs = 20%, Pb = 10%, Br = 20%, and Ag = 15%.

[0093] The structure of the composite electrode is as follows:

[0094] The thickness of n-Si is 1 mm, and the surface roughness is 0.23 μm;

[0095] CsPb 1 Br 3 The thickness of the layer is 1200 nm, which is located above n-Si, as Figure 13 shown, CsPb 1 Br 3 is connected through Br-Pb and Br-Cs. In CsPb 1 Br 3 the Br-Cs Å is 3.80 Å and the Br-Pb Å is 2.70 Å; In CsPb 1 Br 3 the atoms are bridged by ionic bonds formed between Br - at the face-centered position and Cs + ;

[0096] The thickness of the top Ag layer is 110 nm.

[0097] Test conditions and test methods:

[0098] The n-Si / CsPb 1 Br 3 / Ag composite electrode is placed in a dark environment and irradiated with a 520 nm laser, and the current is measured and recorded; then the exposed device is annealed at 55 °C for 25 min and then placed in a dark environment and irradiated with a 520 nm laser to measure and record the current.

[0099] Combined with Example 1, Example 2, and Figures 5 - 8 the cyclic repeatability experiment, Figure 9 the results of the response time test show that the composite electrode has good recyclability; a heterojunction is formed between n-Si and CsPb (0.25~1) Br (1.5~3) , as shown in Figure 10 Figure (a), a heterojunction is formed between n-Si and the P-type CsPb (0.25~1) Br (1.5~3) thin film. Compared with the energy band relationship of FTO, as shown in Figure 10As shown in (b), the heterojunction is more conducive to electron transport, further improving the photoelectric conversion efficiency, resulting in a faster response speed. The rise response time of the device was measured to reach 16 ms, and the fall response time reached 25 ms, indicating good responsiveness.

[0100] Example 3

[0101] A humidity detection chip, as Figure 16 shown, includes:

[0102] A humidity sensing module ⑦, which is located on the top layer of the chip. The humidity sensing module ⑦ is connected to the AD conversion unit ③ in the signal processing module below, and is used to receive the electrical signals collected by the positive electrode in the humidity detection electrode and the temperature signals collected by the temperature sensor, and apply a bias voltage to the humidity detection electrode. The collected electrical signals are transmitted to the AD conversion unit ③ in the signal processing module through the humidity sensing module ⑦;

[0103] A signal processing module, which consists of an AD conversion unit ③ and a data processing unit ②. The signal processing module is located below the humidity sensing module ⑦ and above the low-pass filter module ④. The AD conversion unit ③ is used to convert the continuous analog signal transmitted by the humidity sensing module ⑦ into a digital signal, and then send the digital signal to the data processing unit ② for screening, smoothing processing and temperature compensation;

[0104] A low-pass filter module ④, which is located below the signal processing module and above the base ⑧, and is used to receive the preliminarily processed signal transmitted by the data processing unit ② and filter the positive electrode signal collected by the humidity sensing module ⑦ transmitted by the data processing unit ②;

[0105] A wireless transmission module ①, which is located above the low-pass filter module ④ and on one side of the signal processing module, and is used to transmit the data result processed by the low-pass filter module ④ to a mobile device;

[0106] A power management module, which includes a power voltage stabilization unit ⑤ and a level conversion unit ⑥. The power management module is located above the base ⑧ in parallel with the low-pass filter module ④, and is used to supply power to the low-pass filter module ④, the signal processing module and the wireless transmission module ①;

[0107] The power voltage stabilization unit ⑤ is connected to the low-pass filter module ④ and the AD conversion unit ③, and is used to input a voltage of +5.0~+5.2 V. The level conversion unit ⑥ is connected to the data processing unit ② and the wireless transmission module ①, and is used to input a voltage of +3.2~+3.4 V.

[0108] In addition, the humidity detection chip adopts a 3D packaging method, as Figure 16As shown in the figure, after the humidity detection chip is encapsulated, it is arranged in two columns from left to right. The upper layer of the left column is the humidity sensing module ⑦, the middle layer of the left column from front to back is the signal processing module and the wireless transmission module ① respectively, the lower layer of the left column is the low-pass filtering module ④, and the low-pass filtering module ④ is located above the left side of the base ⑧; the right column from front to back is the power supply voltage stabilizing unit ⑤ and the level conversion unit ⑥ respectively, and the power supply voltage stabilizing unit ⑤ and the level conversion unit ⑥ are located above the right side of the base ⑧.

[0109] Figures 17 - 20 shows the packaged discrete structure diagram of the humidity detection chip, Figure 17 is the specific pin schematic diagram of the humidity sensing module; Figure 18 is the specific pin schematic diagram of the wireless transmission module, data processing unit, and AD conversion unit; Figure 19 is the specific pin schematic diagram of the low-pass filtering module; Figure 20 is the specific pin schematic diagram of the level conversion unit and the power supply voltage stabilizing unit;

[0110] More specifically, the humidity sensing module ⑦ includes power supply one, ground one, reset one, data input one, data output one, debug input one, debug output one, and clock one, a total of eight pins;

[0111] The AD conversion unit ③ includes power supply two, ground two, reset two, data input two, data output two, debug input two, debug output two, and clock two, a total of eight pins;

[0112] The data processing unit ② includes power supply three, ground three, reset three, data input three, data output three, debug input three, debug output three, and clock three, a total of eight pins;

[0113] The low-pass filtering module ④ includes power supply four, ground four, reset four, data input four, data output four, debug input four, debug output four, and clock four, a total of eight pins;

[0114] The wireless transmission module ① includes power supply five, ground five, reset five, data input five, data output five, debug input five, debug output five, and clock five, a total of eight pins;

[0115] The power supply voltage stabilizing unit ⑤ includes power supply one, power supply two, power supply four, power supply six, ground six, reset six, debug input six, debug output six, data input six, and clock six, a total of ten pins;

[0116] The level conversion unit ⑥ includes power supply three, power supply five, ground seven, reset seven, power supply seven, debug input seven, debug output seven, and clock seven, a total of eight pins.

[0117] Among them, between the humidity sensing module ⑦ and the AD conversion unit ③: The pin of the data output one of the humidity sensing module ⑦ is connected to the pin of the data input two of the AD conversion unit ③ through the copper wire printed on the PI glue; The pins of the reset one, clock one, ground one, debug input one, and debug output one of the humidity sensing module ⑦ pass through the AD conversion unit ③ and the low-pass filtering module ④ via the silicon through-hole and are connected to the pins of the reset one, clock one, ground one, debug input one, and debug output one of the base ⑧ through the copper layer.

[0118] Between the humidity sensing module ⑦ and the power supply voltage stabilizing unit ⑤: The pin of the power supply one of the humidity sensing module ⑦ is connected to the pin of the power supply one of the power supply voltage stabilizing unit ⑤ through the copper wire.

[0119] Between the AD conversion unit ③ and the data processing unit ②: The data output two pin of the AD conversion unit ③ is connected to the data input three pin of the data processing unit ②; The pins of the reset two, clock two, ground two, debug input two, and debug output two of the AD conversion unit ③ pass through the low-pass filtering module ④ via the silicon through-hole and are connected to the pins of the reset two, clock two, ground two, debug input two, and debug output one of the base ⑧ through the copper layer;

[0120] Between the data processing unit ② and the level conversion unit ⑥: The pin of the power supply three of the data processing unit ② is connected to the pin of the power supply three of the level conversion unit ⑥ through the copper wire.

[0121] Between the data processing unit ② and the low-pass filtering module ④: The data output three pin of the data processing unit ② is connected to the data input four pin of the low-pass filtering module ④; The pins of the reset three, clock three, ground three, debug input three, and debug output three of the data processing unit ② pass through the low-pass filtering module ④ via the silicon through-hole and are connected to the pins of the reset three, clock three, ground three, debug input three, and debug output three of the base ⑧ through the copper layer.

[0122] Between the AD conversion unit ③ and the power supply voltage stabilizing unit ⑤: The pin of the power supply two of the AD conversion unit ③ is connected to the pin of the power supply two of the power supply voltage stabilizing unit ⑤ through the copper wire;

[0123] Between the low-pass filtering module ④ and the wireless transmission module ①: The data output four pin of the low-pass filtering module ④ is connected to the data input five pin of the wireless transmission module ①; The pins of the reset four, clock four, ground four, debug input four, and debug output four of the low-pass filtering module ④ pass through the copper layer via the silicon through-hole and are connected to the pins of the reset four, clock four, ground four, debug input four, and debug output four of the base ⑧.

[0124] Between the low-pass filtering module ④ and the power supply voltage stabilizing unit ⑤: The pin of the power supply four of the low-pass filtering module ④ is connected to the pin of the power supply four of the power supply voltage stabilizing unit ⑤ through the copper wire;

[0125] Between the wireless transmission module ① and the level conversion unit ⑥: The power supply pin 5 of the wireless transmission module ① is connected to the power supply pin 5 of the level conversion unit ⑥ through a copper wire; the reset pin 5, clock pin 5, ground pin 5, debug input pin 5, and debug output pin 5 of the wireless transmission module ① are connected to the reset pin 5, clock pin 5, ground pin 5, debug input pin 5, and debug output pin 5 of the base ⑧ through a through-silicon via via a copper layer.

[0126] Between the level conversion unit ⑥ and the power supply voltage stabilization unit ⑤: The power supply pin 6 of the power supply voltage stabilization unit ⑤ is connected to the power supply pin 7 of the level conversion unit ⑥ through a copper wire; the reset pin 6, clock pin 6, ground pin 6, debug input pin 6, and debug output pin 6 of the power supply voltage stabilization unit ⑤ are connected to the reset pin 6, clock pin 6, ground pin 6, debug input pin 6, and debug output pin 6 of the base ⑧ through a through-silicon via via a copper layer; the reset pin 7, clock pin 7, ground pin 7, debug input pin 7, and debug output pin 7 of the level conversion unit ⑥ are connected to the reset pin 7, clock pin 7, ground pin 7, debug input pin 7, and debug output pin 7 of the base ⑧ through a through-silicon via via a copper layer.

[0127] Among them, the identifier 101 in the text is the humidity sensor module ground 1, the identifier 102 is the humidity sensor module reset 1, the identifier 103 is the humidity sensor module data input 1, the identifier 104 is the humidity sensor module ground 1, the identifier 105 is the humidity sensor module debug input 1, the identifier 106 is the humidity sensor module debug output 1, the identifier 107 is the humidity sensor module power supply 1, and the identifier 108 is the humidity sensor module clock 1.

[0128] The identifier 109 is for the wireless transmission module to make a through-hole clock five times downward, and the identifier 154 is for the wireless transmission module to make a through-hole clock five times upward; the identifier 110 is for the wireless transmission module to make a through-hole ground five times downward, and the identifier 132 is for the wireless transmission module to make a through-hole ground five times upward; the identifier 111 is for the wireless transmission module to make a through-hole reset five times downward, and the identifier 133 is for the wireless transmission module to make a through-hole reset five times upward; the identifier 112 is for the wireless transmission module to make a through-hole data output five times downward, and the identifier 134 is for the wireless transmission module to make a through-hole data output five times upward; the identifier 113 is for the wireless transmission module to make a through-hole debug input five times downward, and the identifier 135 is for the wireless transmission module to make a through-hole debug input five times upward; the identifier 114 is for the wireless transmission module to make a through-hole debug output five times downward, and the identifier 137 is for the wireless transmission module to make a through-hole debug output five times upward; the identifier 115 is for the wireless transmission module to make a through-hole data input five times downward, and the identifier 138 is for the wireless transmission module to make a through-hole data input five times upward; the identifier 152 is for the wireless transmission module to make a through-hole antenna downward, and the identifier 133 is for the wireless transmission module to make a through-hole antenna upward; the identifier 136 is for the wireless transmission module to make a through-hole power supply five; the identifier 117 is for the data processing unit to make a through-hole ground three times downward, and the identifier 139 is for the data processing unit to make a through-hole ground three times upward; the identifier 118 is for the data processing unit to make a through-hole reset three times downward, and the identifier 140 is for the data processing unit to make a through-hole reset three times upward; the identifier 119 is for the data processing unit to make a through-hole data input three times downward, and the identifier 141 is for the data processing unit to make a through-hole data input three times upward; the identifier 120 is for the data processing unit to make a through-hole debug input three times downward, and the identifier 142 is for the data processing unit to make a through-hole debug input three times upward; the identifier 121 is for the data processing unit to make a through-hole debug output three times downward, and the identifier 144 is for the data processing unit to make a through-hole debug input / output three times upward; the identifier 122 is for the data processing unit to make a through-hole clock three times downward, and the identifier 123 is for the data processing unit to make a through-hole clock three times upward; the identifier 143 is for the data processing unit to make a through-hole power supply three; the identifier 124 is for the AD conversion unit to make a through-hole ground two times downward, and the identifier 146 is for the AD conversion unit to make a through-hole ground two times upward; the identifier 125 is for the AD conversion unit to make a through-hole data input two times downward, and the identifier 145 is for the AD conversion unit to make a through-hole data input two times upward; the identifier 126 is for the AD conversion unit to make a through-hole reset two times downward, and the identifier 147 is for the AD conversion unit to make a through-hole reset two times upward; the identifier 127 is for the AD conversion unit to make a through-hole clock two times downward, and the identifier 148 is for the AD conversion unit to make a through-hole clock two times upward; the identifier 128 is for the AD conversion unit to make a through-hole debug input two times downward, and the identifier 149 is for the AD conversion unit to make a through-hole debug input two times upward; the identifier 129 is for the AD conversion unit to make a through-hole debug output two times downward, and the identifier 151 is for the AD conversion unit to make a through-hole debug output two times upward;The identifier 130 is for the AD conversion unit to make a through-hole data output downward for the second lower part, and the identifier 131 is for the AD conversion unit to make a through-hole data output downward for the second upper part.;

[0129] The identifier 154 is for the low-pass filter module to make a through-hole ground connection downward for the fourth lower part, and the identifier 161 is for the low-pass filter module to make a through-hole ground connection downward for the fourth upper part; the identifier 155 is for the low-pass filter module to make a through-hole reset downward for the fourth lower part, and the identifier 162 is for the low-pass filter module to make a through-hole reset downward for the fourth upper part; the identifier 156 is for the low-pass filter module to make a through-hole data input downward for the fourth lower part, and the identifier 163 is for the low-pass filter module to make a through-hole data input downward for the fourth upper part; the identifier 157 is for the low-pass filter module to make a through-hole data output downward for the fourth lower part, and the identifier 164 is for the low-pass filter module to make a through-hole data output downward for the fourth upper part; the identifier 158 is for the low-pass filter module to make a through-hole debug input downward for the fourth lower part, and the identifier 166 is for the low-pass filter module to make a through-hole debug input downward for the fourth upper part; the identifier 159 is for the low-pass filter module to make a through-hole data debug output downward for the fourth lower part, and the identifier 167 is for the low-pass filter module to make a through-hole debug output downward for the fourth upper part; the identifier 160 is for the low-pass filter module to make a through-hole clock downward for the fourth lower part, and the identifier 168 is for the low-pass filter module to make a through-hole clock downward for the fourth upper part; the identifier 165 is for the low-pass filter module to make a through-hole power supply for the fourth.

[0130] The identifier 188 is for the level conversion unit to make a through-hole data output power supply for the seventh, the identifier 179 is for the level conversion unit to make a through-hole ground connection for the seventh, the identifier 180 is for the level conversion unit to make a through-hole clock for the seventh, the identifier 181 is for the level conversion unit to make a through-hole reset for the seventh, the identifier 182 is for the level conversion unit to make a through-hole debug input for the seventh, the identifier 183 is for the level conversion unit to make a through-hole debug output for the seventh, the identifier 185 is for the level conversion unit to make a through-hole data output power supply for the third, the identifier 186 is for the level conversion unit to make a through-hole data output power supply for the fifth; the identifier 169 is for the power supply voltage stabilization unit to make a copper wire power supply for the sixth, the identifier 173 is for the power supply voltage stabilization unit to make a through-hole power supply for the fourth, the identifier 171 is for the power supply voltage stabilization unit to make a copper wire power supply for the second, the identifier 170 is for the power supply voltage stabilization unit to make a through-hole data input for the sixth, the identifier 174 is for the power supply voltage stabilization unit to make a through-hole debug output for the sixth, the identifier 184 is for the power supply voltage stabilization unit to make a through-hole debug input for the sixth, the identifier 187 is for the power supply voltage stabilization unit to make a through-hole ground connection for the sixth, the identifier 176 is for the power supply voltage stabilization unit to make a through-hole reset for the sixth, the identifier 177 is for the power supply voltage stabilization unit to make a through-hole clock for the sixth, the identifier 178 is for the power supply voltage stabilization unit to make a through-hole power supply for the first.

[0131] Figure 21Among them, label 201 is the base solder ball of the ground connection 1 of the humidity sensing module, label 202 is the base solder ball of the reset 1 of the humidity sensing module, label 203 is the base solder ball of the debugging input 1 of the humidity sensing module, and label 204 is the base solder ball of the debugging output 1 of the humidity sensing module; label 205 is the base solder ball of the ground connection 2 of the AD conversion unit, label 206 is the base solder ball of the reset 2 of the AD conversion unit, label 207 is the clock 2 of the AD conversion unit, label 208 is the debugging input 2 of the AD conversion unit, and label 209 is the debugging output 2 of the AD conversion unit; label 210 is the base solder ball of the debugging output 3 of the data processing unit, label 211 is the debugging input 3 of the data processing unit, label 212 is the ground connection 3 of the data processing unit, label 213 is the reset 3 of the data processing unit, and label 214 is the clock 3 of the data processing unit; label 215 is the base solder ball of the debugging input 4 of the low-pass filter module, label 216 is the debugging output 4 of the low-pass filter module, label 217 is the ground connection 4 of the low-pass filter module, label 218 is the reset 4 of the low-pass filter module, label 219 is the clock 4 of the low-pass filter module, and label 220 is the power supply 4 of the low-pass filter module; label 221 is the base solder ball of the debugging input 5 of the wireless transmission module, label 222 is the debugging output 5 of the wireless transmission module, label 223 is the ground connection 5 of the wireless transmission module, label 224 is the reset 5 of the wireless transmission module, and label 225 is the clock 5 of the wireless transmission module; label 226 is the base solder ball of the debugging input 6 of the power supply voltage stabilization unit, label 227 is the debugging output 6 of the power supply voltage stabilization unit, label 228 is the ground connection 6 of the power supply voltage stabilization unit, label 229 is the reset 6 of the power supply voltage stabilization unit, label 230 is the clock 6 of the power supply voltage stabilization unit, and label 231 is the power supply 6 of the power supply voltage stabilization unit; label 232 is the ground connection 7 of the level conversion unit, label 233 is the reset 7 of the level conversion unit, label 234 is the clock 7 of the level conversion unit, label 235 is the debugging input 7 of the level conversion unit, label 236 is the debugging output 7 of the level conversion unit, and label 237 is the data input 7 of the level conversion unit.

[0132] Figure 22 Among them, labels 301 to 309 are the upper pins of the humidity detection chip; labels 319 to 327 are the lower pins of the humidity detection chip; labels 310 to 318 are the right pins of the humidity detection chip; labels 328 to 336 are the left pins of the humidity detection chip.

[0133] Embodiment 4

[0134] A working method of the humidity detection chip includes the following steps:

[0135] As Figure 17 shown, first, the chip powers on for self-check. The data processing unit ② reads the no-load readings of the humidity detection electrode and the temperature sensor of the humidity sensing module ⑦, and determines whether the readings are normal. If the readings are abnormal, a warning signal is issued. If the readings are normal, it enters the working mode;

[0136] The humidity sensing module ⑦ applies a bias voltage to the positive electrode and receives the humidity electrical signal and the temperature electrical signal, and transmits them to the AD conversion unit ③ in the signal processing module to convert the analog signal into a digital signal;

[0137] The AD conversion unit ③ transmits the converted signal to the data processing unit ② for screening, smoothing, and temperature compensation processing, and then transmits the data to the low-pass filter module ④. The low-pass filter module ④ performs low-pass filtering processing on the input signal and transmits the data to the wireless transmission module ①;

[0138] As Figure 14 shown in the working flowchart of the composite electrode humidity detection chip of the present invention, when the temperature is between 15 and 25 °C, the data processing unit ② combines the humidity signal to perform temperature compensation on the humidity electrical signal and transmits the data to the low-pass filter module ④. Otherwise, the data processing unit ② directly transmits the data to the wireless transmission module ①; the low-pass filter module performs low-pass filtering processing on the temperature-compensated data and then transmits it to the wireless transmission module ①;

[0139] Subsequently, it is transmitted to the mobile device by the wireless transmission module ① via Bluetooth.

[0140] Embodiment 5

[0141] A working method of the humidity detection chip, wherein the n-Si / CsPb (0.25~1) Br (1.5~3) / Ag positive electrode of the humidity sensing module ⑦ has an output signal that drifts with the change of humidity. In order to reduce the influence of the drift, a temperature compensation method is adopted.

[0142] The temperature compensation of the humidity detection chip of the present invention involves the humidity sensing module ⑦ and the data processing unit ②. When the humidity is between 20% and 70% RH and the effective temperature compensation range is between 15 and 25 °C, when the humidity sensing module ⑦ is between 15 and 25 °C, the humidity sensing module ⑦ sends the temperature and humidity electrical signals to the data processing unit ②, and the data processing unit ② performs error compensation on the data according to the temperature compensation formula. The temperature compensation formula is:

[0143] ;

[0144] Wherein, is the relative humidity; is the humidity compensation coefficient, and its value ranges from 0.2 to 0.5; is the device resistance in the relative humidity environment; is the original resistance; is the temperature compensation coefficient, and its value ranges from -0.005 to +0.005; is the initial ambient temperature. As Figure 15 shown, it is the temperature compensation fitting graph, and the fitted temperature shows a linear trend.

[0145] The humidity detection chip of the present invention can be integrated into a device, so as to be applied to artificial intelligence technology equipment to realize real-time detection of ecological-related data, especially humidity.

[0146] The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements or improvements made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A composite electrode, characterized in that: It includes n-Si layer, CsPb (0.25~1) Br (1.5~3) layer and Ag layer; The n-Si layer has a thickness of 0.80-1.00 mm and a surface roughness of 0.20-0.25 μm; The CsPb (0.25~1) Br (1.5~3) The thickness of the layer is 500~1200 nm, and the CsPb (0.25~1) Br (1.5~3) The layer is composed of cubic and elliptical mixed unit cells, CsPb (0.25~1) Br( 1.5~3) The layer is connected to the n-Si layer through Si-Pb covalent bonds; The thickness of the Ag layer is 90-110 nm. (0.25~1) Br (1.5~3) The layers are bonded by Br-Ag ionic bonds.

2. A composite electrode according to claim 1, characterized in that: The CsPb (0.25~1) Br (1.5~3) The atoms of the layer pass through the Br located at the center of the face - With Cs + Ionic bond bridges are formed between CsPb (0.25~1) Br (1.5~3) The layers are connected by Br-Cs bonds and Br-Pb bonds, with Br-Cs bond lengths of 3.50~4.00 Å and Br-Pb bond lengths of 2.50~3.00 Å.

3. A method for preparing the composite electrode according to any one of claims 1 to 2, characterized in that: The following steps are involved: 1) Etching n-Si: Cut n-Si into substrates with a length of 1.50-2.50 cm and a width of 1.20-1.70 cm, clean them, blow dry the etched polished surface for 8-12 min, and obtain n-Si without SiO2; 2) Prepare CsPbBr3 precursor solution: dissolve 0.37~0.74 g of PbBr2 powder in 0.80~1.00 mL of NN dimethylformamide and heat to dissolve at 90~100 °C for 3~5 h; dissolve 0.15~0.26 g of CsBr powder in 0.80~1.00 mL of methanol and heat to dissolve at 55~65 °C for 3~4 h; 3) Preparation of n-Si / CsPbBr3 layer: Through a two-step spin coating method, firstly, a 90~100℃ PbBr2 solution is spin coated on n-Si at a rotation speed of 1700~2500r / min, and then a 55~65℃ CsBr solution is spin coated on PbBr2 at a rotation speed of 1000~2000r / min to obtain a CsPbBr3 film; 4) Preparation of n-Si / CsPbBr3 / Ag structure: Set the evaporation power to 70-90 kW / h and the rotation speed to 2000-3000 r / min to deposit an Ag layer on the surface of the CsPbBr3 film; 5) Preparation of composite electrode: 0.014~ 0.016 m 3 In a closed environment, set a constant humidity environment of 20%~70%RH and place it in the humidity environment for 15~20 min to form a n-Si / CsPb (0.25~1) Br (1.5~3) / Ag layer composite electrode.

4. A humidity detection electrode, characterized in that: It comprises a positive electrode and a negative electrode, wherein the positive electrode is the composite electrode according to any one of claims 1 to 2 or the composite electrode prepared by the preparation method according to claim 3, and the negative electrode is any one of metal tungsten, brass and palladium alloy.

5. A humidity detection chip, characterized in that: include: A humidity sensing module, which is located at the top layer of the chip, and is connected to the AD conversion unit in the signal processing module at the bottom layer, and is used to receive and detect the electrical signal collected by the positive electrode in the humidity detection electrode according to claim 4 and the temperature signal collected by the temperature sensor, and to apply a bias voltage to the humidity detection electrode, and the collected electrical signal is transmitted to the AD conversion unit in the signal processing module through the humidity sensing module; A signal processing module, comprising an AD conversion unit and a data processing unit, wherein the signal processing module is located below the humidity sensing module and above the low-pass filtering module, and the AD conversion unit is used to convert the continuous analog signal transmitted by the humidity sensing module into a digital signal, and then send the digital signal to the data processing unit for screening, smoothing and temperature compensation; A low-pass filter module, which is located below the signal processing module and above the base, is used to receive the preliminarily processed signal transmitted by the data processing unit, and filter the positive electrode signal collected by the humidity sensing module and transmitted by the data processing unit; A wireless transmission module, which is located above the low-pass filter module and on one side of the signal processing module, and is used to transmit the data results processed by the low-pass filter module to a mobile device; The power management module includes a power stabilizing unit and a level conversion unit. The power management module and the low-pass filtering module are located above the base in parallel and are used to supply power to the low-pass filtering module, the signal processing module and the wireless transmission module.

6. A humidity detection chip according to claim 5, characterized in that: The power supply voltage stabilization unit is connected to the low-pass filter module and the AD conversion unit, and is used to input a +5.0~+5.2 V voltage. The level conversion unit is connected to the data processing unit and the wireless transmission module, and is used to input a +3.2~+3.4 V voltage.

7. A method for packaging a humidity detection chip, characterized in that: Based on the humidity detection chip according to any one of claims 5-6, the humidity detection chip adopts a 3D packaging method; After packaging, the humidity detection chip is arranged in two columns, the upper layer of the left column is the humidity sensor module, the middle layer of the left column from front to back is the signal processing module and the wireless transmission module, the lower layer of the left column is the low-pass filter module, and the low-pass filter module is located on the upper left side of the base; the right column from front to back is the power supply stabilizing unit and the level conversion unit, and the power supply stabilizing unit and the level conversion unit are located on the upper right side of the base.

8. A working method of a humidity detection chip, characterized in that: The humidity detection chip manufactured by the humidity detection chip according to any one of claims 5 to 6 or the packaging method according to claim 7 comprises the following steps: S1. The humidity detection chip performs a self-test after powering on. The data processing unit in the signal processing module reads the no-load readings of the humidity detection electrode and the temperature sensor of the humidity sensing module and determines whether the readings are normal. If the readings are abnormal, a warning signal is issued. If the readings are normal, the system enters the working mode. S2, the humidity sensing module applies bias voltage to the positive electrode and receives humidity electrical signals and temperature electrical signals, and transmits them to the AD conversion unit in the signal processing module to convert the analog signals into digital signals; S3, the AD conversion unit transmits the converted signal to the data processing unit for screening and smoothing, and when the temperature is between 15 and 25 °C, the data processing unit combines the humidity signal to perform temperature compensation on the humidity electrical signal and transmits the data to the low-pass filter module, otherwise the data processing unit directly sends the erroneous data to the wireless transmission module; S4, the low-pass filtering module performs low-pass filtering on the signal input by the data processing unit, and transmits the processed data to the wireless transmission module; S5. The wireless transmission module transmits the data to the mobile device wirelessly.

9. The working method of a humidity detection chip according to claim 8, characterized in that: In step S3, when the humidity is 20% to 70% RH, the effective range of temperature compensation is 15 to 25°C; When the humidity sensor module detects that the temperature is between 15 and 25 °C, the data processing unit uses the temperature compensation formula: Perform temperature compensation; in, is the relative humidity; is the humidity compensation coefficient, the value is 0.2~0.5; is the device resistance in relative humidity environment; is the original resistance; is the temperature compensation coefficient, ranging from -0.005 to +0.005; is the initial ambient temperature.

10. Application of a composite electrode or humidity detection electrode or humidity detection chip in humidity detection, characterized in that: The composite electrode is a composite electrode made by the preparation method described in any one of claims 1-2 or claim 3, the humidity detection electrode is a humidity detection electrode described in claim 4, and the humidity detection chip is a humidity detection chip made by the packaging method described in any one of claims 5-6 or claim 7.

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