Two-dimensional heterojunction gas sensing array for surface modification regulation of metal organic framework and preparation method and application of two-dimensional heterojunction gas sensing array
The physical and chemical properties of MOFs are regulated by the surface modification of the metal organic framework, which solves the shortcomings of traditional gas sensors in terms of selectivity and low power consumption, and realizes a high selectivity and stable two-dimensional TMDCs gas sensor, which can accurately identify gas types and concentrations at room temperature.
Patent Information
- Application Number
- CN202311686463.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-08
- Publication Date
- 2025-06-13
AI Technical Summary
Traditional semiconductor gas sensors have shortcomings in selectivity, integration and low power consumption performance, which is difficult to meet the needs of modern industrial and environmental monitoring.
Through surface functional modification of metal organic frameworks (MOFs), the organic ligands and metal junctions of MOFs are regulated to achieve diffusion and adsorption of specific gases and improve the gas selectivity of two-dimensional TMDCs heterojunctions.
A low-power gas sensor operating at room temperature is realized, with higher selectivity and stability, and can accurately identify gas types and mixed gas concentrations.
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Figure CN120142386A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of gas sensor preparation, and particularly relates to a two-dimensional heterojunction gas sensing array with surface modification and regulation of metal-organic frameworks, and a preparation method and application thereof. Background Art
[0002] At present, China's industrial system is in a period of transformation and upgrading, and the monitoring efforts in the fields of environmental monitoring, industrial emissions, medical devices, smart homes, and vehicle exhaust are continuously increasing. Gas sensors play an irreplaceable role in this. Affected by the international situation, the country also increasingly attaches importance to the development of the sensor industry, and has successively introduced a number of policies to promote the development of gas sensors from directions such as strengthening sensor technology innovation and promoting iterative applications of sensors. In recent years, the implementation of the country's "dual carbon" strategic plan has put forward requirements for gas sensors in terms of low power consumption, integration, and intelligence. However, traditional semiconductor gas sensors require a relatively high working temperature (in the range of 200 - 650 °C) to activate oxygen molecules adsorbed on the surface for gas sensing detection, and can no longer meet the technical requirements in terms of selectivity, integration, and low power consumption performance.
[0003] Two-dimensional transition metal dichalcogenides (TMDCs) have significant advantages over traditional semiconductor gas-sensitive materials in the integration of gas sensors due to their atomic-level thickness. Moreover, due to their large specific surface area and high surface activity, TMDCs have great potential value in the application of gas sensors with low power consumption and room-temperature operation. With the progress of two-dimensional TMDCs preparation technology, the research on two-dimensional TMDCs-based gas sensors at home and abroad has been continuously deepening. Scholars from various countries have sought to make breakthroughs in the selectivity of gas sensors by means of innovations in aspects such as two-dimensional TMDCs material synthesis and device processes. Although means such as applying gate voltage, surface noble metal atom doping, and constructing heterocomposite material systems have been used to expand the gas selectivity of two-dimensional TMDCs, these treatments often lead to an increase in the power consumption of gas sensors or introduce unnecessary defects and damage the structural stability. Therefore, on the basis of ensuring low power consumption and stability, exploring methods to improve the selectivity of gas sensors has important scientific significance and application value. Summary of the Invention
[0004] The present invention aims to solve the technical problems in the prior art and provides a two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic frameworks, as well as a preparation method and application thereof. The two-dimensional heterojunction gas sensing array of the present invention utilizes surface functional modification of MOFs. On the one hand, by regulating the organic ligands of MOFs, it has the diffusion characteristics of specific gases, so that it can be used to selectively guide the required target gas to the surface of the sensitive material and intercept the entry of interfering gases. On the other hand, the metal nodes of MOFs can serve as gas adsorption active sites to control the adsorption of specific gases, thereby regulating the gas selectivity of the TMDCs heterojunction.
[0005] To solve the above technical problems, the technical solution of the present invention is specifically as follows:
[0006] A two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic frameworks, comprising: a two-dimensional transition metal dichalcogenide (TMDCs) heterojunction device integrated on a printed circuit board;
[0007] The surface of the two-dimensional TMDCs heterojunction device is modified with a metal-organic framework (MOFs) material.
[0008] Preferably, the MOFs material is Cu 3 HHTP 2 , FDM-23 or ZIF-8 material.
[0009] Preferably, the two-dimensional TMDCs heterojunction device is a MoS 2 / PtSe 2 heterojunction device.
[0010] More preferably, source and drain electrodes are defined on the MoS 2 / PtSe 2 heterojunction device, and the source and drain electrodes are Ti and Au.
[0011] A preparation method of a two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic frameworks, comprising the following steps:
[0012] Step a: Prepare a SiO 2 / Si substrate;
[0013] Step b: Prepare a MoS 2 array on the SiO 2 / Si substrate;
[0014] Step c: Prepare a MoS 2 / PtSe 2 material on the MoS 2 array to obtain MoS 2 / PtSe2 heterojunction arrays, and ultraviolet lithography technology is used to define source and drain electrodes on the MoS 2 / PtSe 2 heterojunction arrays, and then the MoS 2 / PtSe 2 heterojunction arrays are cut into individual MoS 2 / PtSe 2 heterojunction devices;
[0015] Step d: Modify the surface of the MoS 2 / PtSe 2 heterojunction devices with MOF materials;
[0016] Step e: Integrate the MoS 2 / PtSe 2 heterojunction devices with the surface-modified MOF materials prepared in step d on a printed circuit board.
[0017] Preferably, in step c: A two-step chemical vapor deposition (CVD) method is used to prepare the MoS 2 / PtSe 2 heterojunction arrays.
[0018] Preferably, in step d: A liquid-phase self-assembly method is used to modify the MOF materials on the surface of the MoS 2 / PtSe 2 heterojunction devices.
[0019] Preferably, in step e: The MoS 2 / PtSe 2 heterojunction devices are integrated by a gold wire ball bonding process.
[0020] Application of a two-dimensional heterojunction gas sensing array regulated by metal-organic framework surface modification in gas pattern recognition based on machine learning algorithms.
[0021] The beneficial effects of the present invention are:
[0022] The two-dimensional heterojunction gas sensing array regulated by metal-organic framework surface modification of the present invention has the following advantages:
[0023] 1. Due to the unique single-atom layer structure of two-dimensional materials, they have a large specific surface area and high surface activity. Gas sensors based on two-dimensional materials can not only operate at room temperature but also have a lower detection limit, and can be used to construct miniaturized and integrated gas sensors.
[0024] 2. Unlike traditional covalent bond semiconductor heterojunction materials, the heterostructure surface based on two-dimensional van der Waals materials between atomic layers has no dangling bonds, and high-quality heterojunction interfaces can be prepared. Driven by the built-in electric field of the heterojunction, photogenerated carriers can be effectively separated, thus providing a guarantee for obtaining photogenerated electromotive force. It can be used to realize self-driven gas sensors without external voltage.
[0025] 3. Utilizing the surface functional modification of MOFs, on the one hand, by regulating the organic ligands of MOFs, they can have diffusion characteristics for specific gases, so that they can be used to selectively guide the required target gas into the surface of sensitive materials and intercept the entry of interfering gases; on the other hand, the metal nodes of MOFs can be used as gas adsorption active sites to control the adsorption of specific gases, thereby regulating the gas selectivity of TMDCs heterojunctions.
[0026] 4. Using a mild liquid phase self-assembly method to modify MOF materials on the surface of TMDCs can avoid destruction of the two-dimensional TMDCs structure.
[0027] 5. The gas sensor array of the present invention uses a machine learning algorithm to perform gas pattern recognition, which can accurately identify the gas type and mixed gas concentration. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0029] Figure 1 It is a schematic diagram of the preparation process of the heterojunction and gas sensor array of the present invention.
[0030] Figure 2 Workflow diagram of the deep learning-based gas identification algorithm.
[0031] Figure 3 Based on MoS 2 / PtSe 2 Transfer curve of the heterojunction.
[0032] Figure 4 MoS 2 / PtSe 2 Heterojunctions of different NO 2 IV curve of MoS concentration, with the inset showing: in the range of 1-100 ppm 2 / PtSe 2 For different NO 2 Logarithmic plot of IV curves versus concentration.
[0033] Figure 5 MoS 2 / PtSe 2 Heterojunctions with different concentrations of NO 2(1 - 100 ppm) Current transient response diagram.
[0034] Figure 6 For MoS 2 / PtSe 2 The response diagram of the heterojunction to NO with different concentrations 2 (1 - 100 ppm).
[0035] Figure 7 The response diagrams of three sensors to different gases at 100 ppm. Detailed implementation mode
[0036] The inventive concept of the present invention is as follows: Aiming at the problems existing in the prior art, surface functional modification of metal-organic frameworks (MOFs) is one of the ideal solutions to improve the selectivity of two-dimensional TMDCs gas sensors. MOFs are composed of metal nodes and organic ligands, and have the characteristics of high porosity, open structure and ordered pore size. Their physical and chemical properties can be easily regulated by designing different metal nodes and organic ligands. On the one hand, by regulating the organic ligands of MOFs to have the diffusion characteristics of specific gases, it can be used to selectively guide the required target gas to the surface of the sensitive material and intercept the entry of interfering gases; on the other hand, the metal nodes of MOFs can be used as gas adsorption active sites to control the adsorption of specific gases. Therefore, using MOFs with specific gas diffusion characteristics and high gas adsorption activity to perform surface functional modification on two-dimensional TMDCs is expected to achieve a practical selectivity regulation method. In addition, using a mild liquid-phase self-assembly method to modify MOF materials on the surface of TMDCs can avoid the destruction of the two-dimensional TMDCs structure.
[0037] In addition, using machine learning algorithms for gas pattern recognition can achieve accurate classification and concentration identification of mixed volatile organic compounds. Among many machine learning algorithms, deep learning technology based on neural networks has developed rapidly and has gradually shown greater scientific and application value in recent years. The deep learning method can automatically learn deep category features from a large number of data samples, greatly reducing human intervention, simplifying the data processing process, and having the advantages of fast speed and accuracy. Therefore, the present invention intends to use the CVD method to prepare a two-dimensional TMDCs heterojunction array. By modifying MOFs with different structures on the two-dimensional TMDCs heterojunction to form a multi-component gas sensing array, multi-channel time series data with different response characteristics can be collected. Using deep learning algorithms to perform feature extraction and analysis on the sequence data can achieve intelligent identification of the types and concentrations of the detected gases.
[0038] The two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework of the present invention includes: two-dimensional transition metal chalcogenide (TMDCs) heterojunction devices integrated on a printed circuit board; the surfaces of the two-dimensional TMDCs heterojunction devices are modified with metal-organic framework (MOFs) materials. Preferably, the two-dimensional TMDCs heterojunction device is a MoS 2 / PtSe 2 heterojunction device, source and drain electrodes are defined on the MoS 2 / PtSe 2 heterojunction device, the source and drain electrodes are Ti and Au, and the MOFs material is Cu 3 HHTP 2 , FDM-23 or ZIF-8 material.
[0039] For the schematic diagram of the preparation process of the heterojunction and gas sensing array of the present invention, see Figure 1 : As shown in Figure 1 (i)-(ix), the present invention uses a two-step chemical vapor deposition method (CVD) to prepare a MoS 2 / PtSe 2 heterojunction array, and the quality of two-dimensional MoS 2 and PtSe 2 is regulated by changing parameters such as temperature, pressure, and carrier gas flow rate during the growth process, and the influence of process parameters on the quality of two-dimensional MoS 2 and PtSe 2 is analyzed. Equipment such as optical microscopes, Raman spectrometers, atomic force microscopes, and Kelvin probe force microscopes (KPFM) are used to characterize material information such as the size, crystal structure, microscopic morphology, and heterojunction work function difference of the MoS 2 / PtSe 2 heterojunction. The liquid-phase self-assembly growth method is used to modify the MOF materials of different metal nodes and organic ligands on the MoS 2 / PtSe 2 heterojunction gas sensing array by controlling parameters such as the concentration of the precursor solution, growth time, and temperature. Then, experimental equipment such as transmission electron microscopes, atomic force microscopes, and Raman spectrometers are used to complete the characterization and testing of the microscopic morphology, surface morphology, and material composition of the device. Finally, the gas sensing array is adhered to the printed circuit board and integrated through the ballbonding process for subsequent testing.
[0040] Application of the two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework of the present invention in gas pattern recognition using machine learning algorithms. The process of gas recognition pattern recognition is as shown in Figure 2As shown, different concentrations of a single gas or a mixture of two or more gases are introduced into the test chamber. The sensing array can collect multi-channel time series data with different gas response characteristics. Then, these data are subjected to feature extraction and normalization. Deep learning algorithms based on neural networks (backpropagation neural network (BPNN), radial basis function neural network (RBFNN), convolutional neural network (CNN)) are used to classify and test the models of the data, and the effects of different deep learning algorithms on the classification of mixed gases and the accuracy of concentration prediction are analyzed and compared. By intercepting the response data of different time lengths to predict the gas type and the concentration of the mixed gas, the effects of the length of the data "segment" on the classification of the mixed gas and the accuracy of concentration prediction are analyzed and compared. Finally, the gas type and the concentration of the mixed gas can be accurately identified.
[0041] The technical solutions of the present invention will be further described below through embodiments. Those skilled in the art should understand that the embodiments are only for helping to understand the present invention and should not be regarded as specific limitations on the present invention.
[0042] Example 1
[0043] The preparation flowchart of the heterojunction sensing array based on Cu 3 HHTP@MoS 2 / PtSe 2 is shown in Figure 1 and includes the following steps:
[0044] Step a: Prepare the SiO 2 / Si substrate
[0045] Prepare a P-type highly doped silicon wafer with 300 nm thick SiO 2 , clean it with acetone, absolute ethanol, and deionized water respectively, and then blow dry the silicon wafer with a nitrogen gun;
[0046] Step b: Prepare the MoS 2 array
[0047] Photoresist is first spin-coated on the SiO 2 / Si substrate and exposed by ultraviolet lithography to form a periodic square hole array. Subsequently, 5 nm of molybdenum metal is thermally deposited on the corresponding square holes. Then, the photoresist is stripped using NMP solution. Subsequently, CVD growth of MoS 2 is carried out: The SiO 2 / Si substrate containing molybdenum metal is placed downstream of the quartz tube, and sulfur element is placed upstream. Both are placed outside the furnace heating zone at a distance of 10 cm; argon is introduced as the carrier gas (flow rate = 100 sccm). After the furnace temperature reaches 550 °C, the sulfur powder is heated to 150 °C using a heating tape. When the furnace temperature reaches 700 °C, the SiO2 The / Si substrate was moved to the center of the furnace and maintained for 2 hours to form MoS 2 .
[0048] Step c: Prepare MoS 2 / PtSe 2 material
[0049] The photoresist was spin-coated on the molybdenum sulfide square array, and MoS was partially exposed again by photolithography 2 flakes to form a periodic rectangular hole array. 1 nm of Pt was deposited by electron beam evaporation to form a periodic rectangular Pt array. After that, the MoS 2 / Pt array was placed downstream of the quartz tube and heated to 500 °C. Subsequently, selenium powder was heated to 130 °C upstream, and then the sublimated selenium powder was carried to the MoS 2 / Pt array by argon gas (Ar, flow rate: 100 sccm) to react with Pt, and maintained at 600 °C for 2 h. During this process, Pt was converted to PtSe 2 . The source-drain pattern was defined on the MoS 2 / PtSe 2 heterojunction array by ultraviolet photolithography, and then Ti and Au with thicknesses of 5 and 80 nm were evaporated respectively to form the source-drain electrodes. Then, the MoS 2 / PtSe 2 heterojunction array was cut into single MoS 2 / PtSe 2 heterojunction devices for subsequent growth of different metal-organic framework materials.
[0050] Step d: Prepare Cu 3 HHTP 2 @MoS 2 / PtSe 2 material
[0051] The MOF material was grown on the MoS 2 / PtSe 2 heterojunction by the LbL process. Taking Cu 3 HHTP 2 as an example, it was alternately immersed in an ethanol solution of 1 mmol of copper acetate and 0.1 mmol of HHTP for 20 minutes and 40 minutes respectively. After each immersion cycle, the substrate was washed with ethanol to remove the residual reactants. Through repeated LbL cycles, the HHTP ligand was bound to the Cu 2+ ions. The number of immersion cycles was 4 times, and the precise automation of the process was achieved using a rotary dip coater (Nadetech ND-R Rotary Dip Coater). Then, it was rinsed with acetone and isopropyl alcohol to obtain MoS 2 / PtSe 2 @Cu 3 HHTP 2 , and dried in a vacuum drying oven (65 °C).
[0052] Step e: Integration
[0053] Finally, the gas sensing array was adhered to the printed circuit board and integrated by the ball bonding process for subsequent testing.
[0054] Figure 3 shows the transfer characteristics of the n-type MoS prepared in this example 2 / PtSe 2 . As Vgs increased from -60 V to +60 V, I ds increased sharply by 7 orders of magnitude, indicating a strong gate modulation. As Figure 4 shown, we also carried out gas sensing experiments on MoS 2 / PtSe 2 at a NO2 concentration of 1 to 100 ppm. Figure 4 represents the change in the current transient response of the sensor at room temperature. As the NO2 gas concentration increased, the current of the sensor continuously decreased. Figure 5 represents the change in the current transient response of the sensor at room temperature. As NO2 gas was introduced into the gas chamber, the current of the sensor continuously decreased and then leveled off to reach an equilibrium state. Figure 6 shows the response of the MoS 2 / PtSe 2 sensor to different concentrations of NO 2 at room temperature. As the concentration increased from 1 ppm to 100 ppm, the gas sensitivity response also increased. As can be seen from Figure 7 , Cu 3 HHTP 2 @MoS 2 / PtSe 2 sensor had an insignificant response to ammonia, formaldehyde, SO 2 , and NO2 gases, indicating that Cu 3 HHTP 2 @MoS 2 / PtSe 2 heterojunction had a high selectivity to NO2.
[0055] Example 2
[0056] MoS 2 / PtSe 2Steps a-c and e of the preparation process of the heterojunction sensing array are the same as those in Example 1. The preparation process of the MOF material FDM-23 in step d is as follows:
[0057] DMF, ethanol, and H 2 O were formulated into a 100 mL mixed solution in a ratio of 3:3:2.
[0058] Copper nitrate trihydrate (Cu(NO 3 ) 2 ·3H 2 O, 100 mg), isophthalic acid (m-H 2 BDC, 70 m), and phosphotungstic acid (H 3 [P(W 3 O 10 ) 4 , 500 mg) of the solid mixture was dissolved in the prepared mixed solution.
[0059] The prepared SiO 2 / PtSe 2 wafer with MoS 2 was placed in the solvent and heated at 85 °C for 12 h. The silicon wafer was taken out for appropriate cleaning and other post-treatments to obtain FDM-23@MoS 2 / PtSe 2 .
[0060] Example 3
[0061] Steps a-c and e of the preparation process of the MoS 2 / PtSe 2 heterojunction sensing array are the same as those in Example 1. The preparation process of the MOF material ZIF-8 in step d is as follows:
[0062] First, at room temperature, the two-dimensional material device was placed at the bottom of the beaker. Then, a 0.293 g Zn(NO 3 ) 2 ·6H 2 O solution dissolved in 15 mL MeOH and a 0.649 g mIM (dimethylimidazole) solution dissolved in 15 mL MeOH were mixed to prepare the precursor material for ZIF-8 growth.
[0063] The mixed solution was gently poured into the beaker containing the MoS 2 / PtSe 2 device. The assembly time was controlled at 1, 2, and 4 h to control the coating thickness of ZIF-8 on the two-dimensional material device.
[0064] After the self-assembly process, the heterostructure device was washed twice with ethanol and dried overnight at room temperature.
[0065] Example 4
[0066] The Cu prepared in Example 1 of the present invention 3 HHTP@MoS 2 / PtSe 2 The heterojunction sensor array performs gas pattern recognition based on machine learning algorithms, thereby realizing intelligent recognition of the type and concentration of the detected gas. The specific process is as follows:
[0067] The gas sensitivity test data records come from experiments. Then these data are divided into a training data set (1600 sets) and a test data set (400 sets). In the training data set, there are 400 sets of data sensitive to four gases, including nitrogen dioxide, formaldehyde, ammonia and sulfur dioxide.
[0068] These datasets were imported into the Python 3.8 development environment, and Numpy and Scikit-learn libraries were used for feature extraction, normalization, and model testing.
[0069] The data were classified and tested using deep learning algorithms based on neural networks (back propagation neural network (BPNN), radial basis function neural network (RBFNN), and convolutional neural network (CNN)). The effects of different deep learning algorithms on the classification and concentration prediction accuracy of mixed gases were analyzed and compared.
[0070] The two-dimensional heterojunction gas sensor array of the present invention is used for gas pattern recognition using a machine learning algorithm, and can accurately identify the optimal model and data "segment" length parameters of gas type and mixed gas concentration.
[0071] In summary, the two-dimensional heterojunction gas sensor array regulated by metal organic framework surface modification of the present invention can effectively separate photogenerated carriers under the drive of the built-in electric field of the heterojunction, thereby providing a guarantee for obtaining photogenerated electromotive force and realizing a self-driven gas sensor without external voltage. By regulating the organic ligands of MOFs, it has the diffusion characteristics of specific gases, so that it can be used to selectively guide the required target gas into the surface of the sensitive material and intercept the entry of interfering gases; on the other hand, the metal nodes of MOFs can be used as gas adsorption active sites to control the adsorption of specific gases, thereby regulating the gas selectivity of the TMDCs heterojunction.
[0072] Obviously, the above embodiments are merely examples given for clear illustration and are not limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to enumerate all the implementation manners here. And the obvious changes or modifications derived therefrom still fall within the protection scope of the present invention.
Claims
1. A two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework, comprising: A two-dimensional transition metal chalcogenide (TMDCs) heterojunction device integrated on a printed circuit board; Characterized in that the surface of the two-dimensional TMDCs heterojunction device is modified with a metal-organic framework (MOFs) material.
2. The two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework according to claim 1, characterized in that The MOF material is Cu 3 HHTP 2 , FDM-23 or ZIF-8 material.
3. The two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework according to claim 2, characterized in that The two-dimensional TMDCs heterojunction device is MoS 2 / PtSe 2 heterojunction device.
4. The two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework according to claim 3, characterized in that The MoS 2 / PtSe 2 Source and drain electrodes are defined on the heterojunction device, and the source and drain electrodes are Ti and Au.
5. A preparation method of the two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework according to claim 4, characterized in that comprises the following steps: Step a: Prepare a SiO 2 / Si substrate; Step b: Prepare a MoS 2 array on the SiO 2 / Si substrate; Step c: Prepare MoS 2 on the array to obtain a MoS 2 / PtSe 2 material, and acquire a MoS 2 / PtSe 2 heterojunction array. Then, use ultraviolet lithography technology to define the source and drain on the MoS 2 / PtSe 2 heterojunction array. Subsequently, cut the MoS 2 / PtSe 2 heterojunction array into individual MoS 2 / PtSe 2 heterojunction devices; Step d: Modify the surface of the MoS 2 / PtSe 2 heterojunction device with MOF materials; Step e: Integrate the MoS 2 / PtSe 2 heterojunction device prepared in step d on a printed circuit board.
6. The preparation method of the two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework according to claim 5, characterized in that In step c: A two-step chemical vapor deposition (CVD) method is used to prepare MoS 2 / PtSe 2 heterojunction arrays.
7. The preparation method of the two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework according to claim 5, characterized in that In step d: The MOF material is modified on the surface of the MoS 2 / PtSe 2 heterojunction device by a liquid-phase self-assembly method.
8. The preparation method of the two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework according to claim 5, characterized in that In step e: Integrate the MoS 2 / PtSe 2 heterojunction device through the gold wire ball bonding process.
9. Application of the two-dimensional heterojunction gas sensing array with surface modification regulation of metal-organic framework according to any one of claims 1-4 in gas pattern recognition using a machine learning algorithm.