Generation device of zeptosecond gamma ray pulse
Through the combination of the electron beam slicing generation system in the order of magnitude magnitude γ-ray pulses with adjustable energy by Compton scattering, it solves the problem of difficult to achieve high photon energy and short pulse duration in the existing technology, and realizes efficient ultrafast γ-ray pulse generation, providing an important tool for related scientific research.
Patent Information
- Application Number
- CN202510615314.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-14
- Publication Date
- 2025-06-13
- Estimated Expiration
- 2045-05-14
AI Technical Summary
The prior art is difficult to effectively generate energy-adjustable gamma-ray pulses of the order of magnitude magnitude, especially with huge limitations and high costs in achieving higher photon energy and shorter pulse durations.
By combining the electron beam slicing generation system in the order of magnitude-second electron beam slicing generation system and the Compton scattering laser system, Compton scattering is performed using high-density electron slices and pulsed lasers to generate gamma ray pulses with a very short duration.
The generation of gamma ray pulses of the order of magnitude magnitude with adjustable energy is realized, supporting the generation of ultrafast high-energy gamma ray pulses of the order of magnitude magnitude and magnitude magnitude, providing important applications for detecting nuclear dynamics processes and physical phenomena under extreme conditions.
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Figure CN120143285A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of ultrafast pulse generation, and more particularly to an attosecond gamma-ray pulse generation device. Background Art
[0002] Ultrafast X / γ-ray pulses have important applications in detecting the ultrafast dynamics of substances, studying the internal structures of atoms and molecules, and exploring physical phenomena under extreme conditions. Currently, the only way to generate attosecond-scale ultrashort pulses of hard X-rays is through X-ray free electron laser devices. However, from the perspective of free electron laser physics, it is extremely limited and costly to achieve higher photon energies (in the MeV range) and pulse durations of dozens of attoseconds or even attosecond scale solely by means of free electron lasers. Therefore, there is an urgent need in the art for an easily realizable attosecond gamma-ray pulse generation device. Summary of the Invention
[0003] The object of the present invention is to provide an attosecond gamma-ray pulse generation device to generate attosecond-scale gamma-ray pulses with adjustable energy.
[0004] Based on the above object, the present invention provides an attosecond gamma-ray pulse generation device, which includes an attosecond-scale electron beam slicing generation system, a cavity, a Compton scattering laser system, and a collimation device. The attosecond-scale electron beam slicing generation system, the cavity, and the collimation device are arranged in sequence along a first axis; the attosecond-scale electron beam slicing system is used to generate an attosecond-scale electron beam with high-density slices, the cavity is used to provide an interaction cavity, the Compton scattering laser system is used to generate pulsed laser, and the pulsed laser and the attosecond-scale electron beam with high-density slices undergo Compton scattering in the interaction cavity to generate attosecond-scale gamma-ray pulses; the collimation device is used to collimate the attosecond-scale gamma-ray pulses.
[0005] Optionally, the attosecond-scale electron beam slicing generation system includes an injector, a first linear accelerator, and an undulator. The injector is used to generate an electron beam, the first linear accelerator is used to accelerate the electron beam to a preset energy, and the undulator is used to cause the electron beam reaching the preset energy to undergo transverse oscillation to generate an electron beam with a microbunching structure as the attosecond-scale electron beam with high-density slices.
[0006] Optionally, the injector, the first linear accelerator, and the undulator are arranged in sequence along the first axis.
[0007] Optionally, the undulator operates in the self-amplified spontaneous emission mode, and the resonant radiation wavelength of the undulator is less than 1 nanometer.
[0008] Optionally, the amplitude of the bunching factor of the electron beam with a micro-bunching structure is greater than 0.4.
[0009] Optionally, the zeptosecond-scale electron beam slicing generation system includes a photocathode electron gun, a transverse emittance exchange system, a second linear accelerator, and a chromaticity-driven micro-bunching system. The photocathode electron gun is used to generate a circular electron beam with a uniform transverse emittance. The transverse emittance exchange system is used to convert the circular electron beam into a flattened beam with a larger transverse emittance in one direction and a smaller transverse emittance in the other direction. The second linear accelerator is used to accelerate the flattened beam to a preset energy. The chromaticity-driven micro-bunching system is used to introduce chromaticity to the flattened beam with the preset energy and convert the flattened beam into a circular beam with a relatively uniform emittance, so as to obtain the zeptosecond-scale electron beam with high-density slices.
[0010] Optionally, the transverse emittance exchange system includes a solenoid coil, an accelerating cavity, and an oblique quadrupole iron group. The cathode of the photocathode electron gun is immersed inside the solenoid coil. The solenoid coil is used to magnetize the electron beam generated by the photocathode electron gun. The accelerating cavity is used to accelerate the magnetized electron beam. The oblique quadrupole iron group is used to convert the accelerated magnetized electron beam into a flattened beam.
[0011] Optionally, the oblique quadrupole iron group includes a first focusing oblique quadrupole iron, a defocusing quadrupole iron, and a second focusing oblique quadrupole iron arranged in sequence.
[0012] Optionally, the ratio of the emittance in the y direction to the emittance in the x direction of the flattened beam is 5.
[0013] Optionally, the chromaticity-driven micro-bunching system includes a dipole magnet, a few-cycle laser system, a modulation section, and a compression section. The dipole magnet is used to introduce chromaticity to the electron beam. The few-cycle laser system is used to generate a few-cycle laser. The electron beam with introduced chromaticity interacts with the few-cycle laser in the modulation section to generate energy modulation. The energy modulation is converted into density modulation in the compression section, so as to obtain the zeptosecond-scale electron beam with high-density slices.
[0014] The device for generating zeptosecond γ-ray pulses of the present invention obtains γ-ray pulses with an extremely short duration, that is, zeptosecond-scale γ-ray pulses, by using the micro-bunching structure generated in the free electron laser process or the high-density electron slices generated by the multi-dimensional phase space manipulation method to perform Compton scattering with a pulsed laser. Moreover, the ultrafast zeptosecond γ-ray pulses generated by this method are absolutely synchronized with the Compton scattering laser system, which is the key to the pump-probe technology. This technology can generate ultrafast high-energy (a few MeV to hundreds of MeV) γ-ray pulses in the attosecond and zeptosecond scales, and has important applications in aspects such as detecting nuclear dynamics processes and exploring physical phenomena under extreme conditions. Description of the Drawings
[0015] Figure 1 Schematic structural diagram of a zeptosecond γ-ray pulse generating device according to an embodiment of the present invention; Figure 2 Schematic structural diagram of a zeptosecond electron beam slicing system of a zeptosecond γ-ray pulse generating device according to an embodiment of the present invention; Figure 3 Schematic structural diagram of another zeptosecond electron beam slicing system of a zeptosecond γ-ray pulse generating device according to an embodiment of the present invention; Figure 4 For Figure 3 Schematic structural diagram of a transverse emittance exchange system of a zeptosecond electron beam slicing system of Figure 5 For Figure 3 Schematic structural diagram of a role-dispersion-driven microbunching system of a zeptosecond electron beam slicing system of Detailed implementation manners
[0016] The following presents preferred embodiments of the present invention in conjunction with the accompanying drawings and describes them in detail.
[0017] As Figure 1 shown, an embodiment of the present invention provides a zeptosecond γ-ray pulse generating device, which includes a zeptosecond electron beam slicing generation system 100, a cavity 200, a Compton scattering laser system 300, and a collimation device 400. The zeptosecond electron beam slicing generation system 100, the cavity 200, and the collimation device 400 are arranged in sequence along a first axis. The zeptosecond electron beam slicing system 100 is used to generate a zeptosecond electron beam with high-density slices. The cavity 200 is used to provide an interaction cavity. The Compton scattering laser system 300 is used to generate pulsed laser and input the pulsed laser into the interaction cavity. The pulsed laser and the zeptosecond electron beam with high-density slices undergo Compton scattering in the interaction cavity to generate zeptosecond γ-ray pulses (such as a single-peak γ-ray pulse of about 750 zeptoseconds); the collimation device 400 is used to filter out the small-divergence-angle γ-ray pulses that propagate collimated.
[0018] The generation principle of the zeptosecond γ-ray pulse in the embodiment of the present invention is as follows: The radiation pulse width generated by the laser Compton scattering of a relativistic (high-energy) electron beam mainly depends on the length of the electron beam. When the relativistic factor of the electron is large enough, the width of the generated γ-ray pulse is almost equal to the length of the electron beam; since the electron beam generated by the zeptosecond electron beam slicing system 100 is of zeptosecond order, after undergoing Compton scattering with the pulsed laser, the generated γ-ray pulse is also of zeptosecond order.
[0019] In the interaction cavity, an attosecond electron beam with a high-density slice and a laser can undergo Compton scattering at multiple angles (i.e., the emission angle of gamma rays) to adjust the energy of the generated scattered photons. The incident angle of the laser can be adjusted by a mirror, which is arranged in the interaction cavity. By adjusting the wavelength of the pulsed laser generated by the Compton scattering laser system 300, the energy of the scattered photons can also be adjusted.
[0020] In the scope of linear Compton scattering, the energy E of the scattered photons can be expressed as: .
[0021] Where, is the energy of the laser photon (h is Planck's constant, c is the speed of light, is the wavelength of the incident laser), is the angle of interaction between the electron and the photon, which is π here, θ is the emission angle of the gamma rays relative to the electron motion trajectory, .
[0022] As Figure 2 shown, in some embodiments, the attosecond electron beam slice generation system 100 may include an injector 110, a first linear accelerator 120, and a wiggler 130. The injector 110, the first linear accelerator 120, and the wiggler 130 are arranged in sequence along a first axis. The injector 110 is used to generate an electron beam, the first linear accelerator 120 is used to accelerate the electron beam to a preset energy, and the wiggler 130 is used to make the electron beam with the preset energy undergo transverse oscillation to generate an electron beam with a microbunched structure (i.e., an attosecond electron beam with a high-density slice).
[0023] The wiggler 130 is set to satisfy the resonance relation formula of free electron laser: .
[0024] Where, is the wiggler radiation resonance wavelength, i.e., the free electron laser radiation wavelength, γ is the relativistic factor of the electron bunch, which is related to the electron energy, is the wiggler period, i.e., the period of the pendulum motion of the electron bunch, is the wiggler magnetic field parameter. By changing γ, and , the radiation resonance wavelength can be continuously adjusted. The wiggler 130 can be in the self-amplified spontaneous emission (SASE) mode or the externally seeded free electron laser high-gain high-harmonic generation (HGHG) mode. For the generation of attosecond gamma-ray pulses, the wiggler 130 can only select the self-amplified spontaneous emission mode, and the resonance radiation wavelength is set to be less than 1 nanometer X-ray.
[0025] The combined functions of the injector 110, the first linear accelerator 120, and the undulator 130 need to be satisfied. After the electron beam generated by the injector 110 is accelerated by the first linear accelerator 120, the quality and energy of the electron beam are sufficient to generate a sufficiently good microbunching structure in the undulator 130. The degree of microbunching in the electron beam is quantified by the bunching factor, and the amplitude of the bunching factor is between 0 and 1, and the amplitude of the bunching factor is preferably greater than 0.4.
[0026] Based on the use of Figure 2 A method for generating zeptosecond gamma-ray pulses by a generating device of zeptosecond gamma-ray pulses of the zeptosecond electron beam slicing generation system 100 includes the following steps: S510: The injector 110 generates an electron beam, and the electron beam is accelerated by the first linear accelerator 120 to a preset energy. The electron beam with the preset energy oscillates transversely in the undulator 130 to form a microbunching structure with a period of the undulator radiation wavelength, and the undulator radiation wavelength is at least less than 1 nanometer; S520: The electron beam with the microbunching structure undergoes Compton scattering with a pulsed laser in the interaction cavity to generate zeptosecond gamma-ray pulses. The angle between the incident pulsed laser and the propagation direction of the electron beam is adjustable to control the energy of the generated scattered gamma rays; S530: Since the pulse width of the generated pulse is extremely narrow, the propagation process will cause the pulse to broaden. Therefore, a collimation device 400 is also required to collimate the zeptosecond gamma-ray pulses.
[0027] As Figure 3 shown, in some embodiments, the zeptosecond electron beam slicing generation system 100 may include a photocathode electron gun 140, a transverse emittance exchange system 150, a second linear accelerator 160, and a chromatic dispersion-driven microbunching system 170. The photocathode electron gun 140 is used to generate a circular electron beam bunch with a uniform transverse emittance. The transverse emittance exchange system 150 is used to convert the circular electron beam bunch into a flattened bunch with a larger transverse emittance in one direction and a smaller transverse emittance in the other direction. The second linear accelerator 160 is used to accelerate the flattened bunch to a preset energy (for example, 1.5 GeV). The chromatic dispersion-driven microbunching system 170 is used to introduce chromatic dispersion to the flattened bunch with the preset energy and convert the flattened bunch into a circular bunch with a more uniform emittance to obtain a zeptosecond-level electron beam with a high-density slice.
[0028] As Figure 4As shown, in some embodiments, the transverse emittance exchange system 150 includes a solenoid coil 151, an accelerating cavity 152, and an oblique quadrupole iron group 153 arranged in sequence along a first axis. The cathode of the photocathode electron gun 140 is immersed inside the solenoid coil 151. The solenoid coil 151 is used to magnetize the electron beam generated by the photocathode electron gun 140. Specifically, from the generation of the electron beam to its exit from the solenoid coil, due to the different intensity distributions of the magnetic field along the radial direction at the exit of the solenoid coil 151, it will cause the coupling of the longitudinal moving particles in the transverse direction. Such an electron beam is called a magnetized electron beam; the accelerating cavity 152 is used to accelerate the magnetized electron beam to increase its energy to several MeV, and the oblique quadrupole iron group 153 is used to convert the magnetized electron beam into a flattened bunch. The ratio of the emittance in the y direction to the emittance in the x direction of the flattened bunch is about 5.
[0029] In some embodiments, the oblique quadrupole iron group 153 includes a first focusing oblique quadrupole iron 1531, a defocusing oblique quadrupole iron 1532, and a second focusing oblique quadrupole iron 1533 arranged in sequence along the first axis.
[0030] In some embodiments, the angular dispersion-driven microbunching system 170 includes a dipole iron 171, a few-cycle laser system 172, a modulation section 173, and a compression section 174. The dipole iron 171 is used to introduce angular dispersion to the electron beam with a preset energy. The few-cycle laser system 172 is used to generate a few-cycle laser. The electron beam with introduced angular dispersion interacts with the few-cycle laser in the modulation section 173 to generate an energy modulation, and its modulation depth is close to 100 times the electron beam energy spread; the energy modulation of the electron beam is converted into a density modulation in the compression section 174, so as to generate a locally extremely high-density electron slice in the electron beam, and the emittance of the electron beam in the x direction and the emittance in the y direction tend to be equal. The modulation section 173 can be a single-cycle undulator, which is composed of periodic magnet blocks, and the compression section 174 is composed of two dipole irons with the same intensity and opposite magnetic polarities.
[0031] The wavelength of the few-cycle laser can be 400 nm, and the duration is about 3 fs; the resonance wavelength of the modulation section 173 is also 400 nm, which satisfies the free electron laser resonance formula.
[0032] Based on the use of Figure 3 The method for generating zeptosecond gamma-ray pulses by the zeptosecond gamma-ray pulse generating device of the zeptosecond electron beam slicing system 100 includes the following steps: S610: The photocathode electron gun 140 generates a circular electron beam with a uniform transverse emittance. The circular electron beam passes through the transverse emittance exchange system 150 and is converted into a flattened bunch with a larger transverse emittance in one direction and a smaller transverse emittance in the other direction; S620: The flattened bunch is accelerated to a preset energy by the second linear accelerator 160, and the electron beam with the preset energy enters the angular dispersion-driven microbunching system 170; S630: The angular dispersion-driven microbunching system 170 is used to introduce angular dispersion to a flattened bunch of a preset energy and convert the flattened bunch into a circular bunch with a relatively uniform emittance, so as to obtain an attosecond-level electron beam with high-density slices; S640: The attosecond-level electron beam with high-density slices and a pulsed laser undergo Compton scattering in an interaction cavity to generate an attosecond γ-ray pulse; S650: The collimation device 400 collimates the attosecond γ-ray pulse.
[0033] The attosecond γ-ray pulse generation device according to the embodiment of the present invention obtains an extremely short-duration γ-ray pulse, that is, an attosecond-level γ-ray pulse, by using the microbunching structure generated during the free electron laser process or the high-density electron slices generated by the multi-dimensional phase space manipulation method to perform Compton scattering with a pulsed laser. Moreover, the ultrafast attosecond γ-ray pulse generated by this method is absolutely synchronized with the Compton scattering laser system, which is the key to the pump-probe technology. This technology can generate ultrafast high-energy (a few MeV to hundreds of MeV) γ-ray pulses at the attosecond and zeptosecond levels, and has important applications in aspects such as detecting nuclear dynamics processes and exploring physical phenomena under extreme conditions.
[0034] The above-mentioned are only the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Various changes can be made to the above embodiments of the present invention. That is, all simple, equivalent changes and modifications made according to the claims and the content of the specification of the present invention application fall within the scope of the claims of the present invention patent. The content not described in detail in the present invention is all conventional technical content.
Claims
1. A device for generating zeptosecond gamma-ray pulses, characterized in that: The invention comprises a zeptosecond electron beam slicing generation system, a cavity, a Compton scattering laser system and a collimating device, wherein the zeptosecond electron beam slicing generation system, the cavity and the collimating device are arranged in sequence along a first axis; the zeptosecond electron beam slicing system is used to generate an electron beam with high-density slicing at the zeptosecond level, the cavity is used to provide an interaction cavity, the Compton scattering laser system is used to generate a pulsed laser, and the pulsed laser and the electron beam with high-density slicing at the zeptosecond level are Compton scattered in the interaction cavity to generate a zeptosecond gamma-ray pulse; The collimation device is used to collimate the zeptosecond-level gamma-ray pulses.
2. The device for generating zeptosecond gamma-ray pulses according to claim 1, characterized in that: The zetsecond-scale electron beam slicing generation system includes an injector, a first linear accelerator and an undulator, wherein the injector is used to generate an electron beam, the first linear accelerator is used to accelerate the electron beam to a preset energy, and the undulator is used to cause the electron beam that has reached the preset energy to oscillate laterally to generate an electron beam with a microcluster structure, as the zetsecond-scale electron beam with high-density slicing.
3. The device for generating zeptosecond gamma-ray pulses according to claim 2, characterized in that: The injector, the first linear accelerator and the undulator are arranged in sequence along the first axis.
4. The device for generating zeptosecond gamma-ray pulses according to claim 2, characterized in that: The undulator operates in a self-amplified spontaneous emission mode, and the resonant radiation wavelength of the undulator is less than 1 nanometer.
5. The device for generating zeptosecond gamma-ray pulses according to claim 2, characterized in that: The electron beam with the micro-clustering structure has a clustering factor amplitude greater than 0.
4.
6. The device for generating zeptosecond gamma-ray pulses according to claim 1, characterized in that: The zetsecond-level electron beam slice generation system includes a photocathode electron gun, a transverse emittance exchange system, a second linear accelerator and an angular dispersion driven micro-clustering system. The photocathode electron gun is used to generate a circular electron beam with uniform transverse emittance. The transverse emittance exchange system is used to convert the circular electron beam into a flat beam in which one transverse emittance is larger and the other transverse emittance is smaller. The second linear accelerator is used to accelerate the flat beam to a preset energy. The angular dispersion driven micro-clustering system is used to introduce angular dispersion into the flat beam of preset energy and convert the flat beam into a circular beam with relatively uniform emittance, so as to obtain the zetsecond-level electron beam with high-density slices.
7. The device for generating zeptosecond gamma-ray pulses according to claim 6, characterized in that: The transverse emittance exchange system includes a helical coil, an accelerating cavity and an oblique quadrupole iron group. The cathode of the photocathode electron gun is immersed in the interior of the helical coil. The helical coil is used to magnetize the electron beam generated by the photocathode electron gun. The accelerating cavity is used to accelerate the magnetized electron beam. The oblique quadrupole iron group is used to convert the accelerated magnetized electron beam into a flat beam.
8. The device for generating zeptosecond gamma-ray pulses according to claim 7, characterized in that: The slant quadrupole group includes a first focusing slant quadrupole, a defocusing slant quadrupole and a second focusing slant quadrupole which are arranged in sequence.
9. The device for generating zeptosecond gamma-ray pulses according to claim 7, characterized in that: The ratio of the emittance in the y direction to the emittance in the x direction of the flat beam is 5.
10. The device for generating zeptosecond gamma-ray pulses according to claim 6, characterized in that: The angular dispersion driven micro-clustering system includes a dipole iron, a few-cycle laser system, a modulation section and a compression section. The dipole iron is used to introduce angular dispersion into the electron beam. The few-cycle laser system is used to generate a few-cycle laser. The electron beam after the angular dispersion is introduced interacts with the few-cycle laser in the modulation section to generate energy modulation. The energy modulation is converted into density modulation in the compression section to obtain the electron beam with high-density slices at the zeptesecond level.
Citation Information
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