A heating device for wafer etching

Abstract

The present invention provides a heating device for wafer etching, comprising: a mounting base, with a plurality of heating lamp rings mounted on one side of the mounting base, the plurality of heating lamp rings being coaxially arranged and having an inner diameter that increases sequentially from the inside to the outside; the mounting base comprising a base and a mounting plate, the base and the mounting plate enclosing a receiving cavity, the plurality of heating lamp rings being mounted on a side of the mounting plate away from the receiving cavity, an etching liquid path being disposed within the receiving cavity, the nozzles of the etching liquid path extending from the side of the mounting plate where the heating lamp rings are mounted to spray etching liquid onto the wafer surface. The present invention is intended to address the problem in the prior art of inconsistent heating effects on the inside and outside of the wafer, resulting in uneven heating of the wafer, which in turn affects the wafer etching effect.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor etching, and in particular to a heating device for wafer etching. Background Art

[0002] The goal of semiconductor etching is to transfer the photoresist pattern obtained by photolithography to a thin film on the wafer surface. This involves leveraging the covering and protective properties of the photoresist film to remove the unprotected film through chemical reactions or physical reactions, achieving the pattern transfer. During wafer etching, commonly used etchants, such as phosphoric acid, hydrofluoric acid, and buffered oxide etchants, require specific temperature conditions for an effective chemical reaction with the wafer surface film. Furthermore, heating provides additional heat to intensify the molecular thermal motion of the etchant, thereby increasing its reaction rate with the wafer surface material.

[0003] During the current wafer etching process, LED lights are typically used as a heat source to heat the backside of the wafer while spraying etchant onto the front side. Specifically, LED lights are typically point-shaped light sources, which can lead to uneven heating. The heating effect on the inside of the wafer (near the center) is significantly better than that on the outside (near the edge), which affects the etching performance.

[0004] In view of this, it is necessary to improve the existing wafer etching heating device to solve the above problems. It should be noted that the above introduction to the background technology is only for the convenience of providing a clear and complete description of the technical solutions of this application and facilitating the understanding of those skilled in the art. It should not be assumed that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of this application. Summary of the Invention

[0005] The purpose of the present invention is to disclose a heating device for wafer etching, which is used to solve the problem in the prior art that the heating effects on the inner and outer sides of the wafer are inconsistent, resulting in uneven heating of the wafer, which in turn affects the wafer etching effect.

[0006] To achieve the above-mentioned object, the present invention provides a heating device for wafer etching, comprising: a mounting seat, a plurality of heating lamp rings being mounted on one side of the mounting seat, the plurality of heating lamp rings being coaxially arranged and having inner diameters increasing sequentially from the inside to the outside;

[0007] The mounting seat includes a base and a mounting plate, and the base and the mounting plate enclose a receiving cavity. Several heating lamp rings are assembled on the side of the mounting plate away from the receiving cavity. An etching liquid path is arranged in the receiving cavity. The etching liquid path has a nozzle that passes through the side of the mounting plate where the heating lamp ring is assembled to spray etching liquid onto the wafer surface.

[0008] As a further improvement of the present invention, a transparent lampshade is installed on the side of the mounting plate away from the accommodating cavity, and the nozzle passes through the transparent lampshade after passing through the mounting plate to spray the etching liquid onto the wafer surface;

[0009] The mounting plate is coaxially provided with a receiving groove for receiving a plurality of heating lamp rings on one side away from the receiving cavity. The nozzle passes through the axis of the mounting plate. The plurality of heating lamp rings are optionally halogen lamps. The transparent lampshade supports the top of the plurality of heating lamp rings.

[0010] As a further improvement of the present invention, the etching liquid circuit includes a first liquid inlet valve and a phosphoric acid pipeline, the first liquid inlet valve is fixedly connected to the base, one end of the phosphoric acid pipeline is connected to the first liquid inlet valve, and the other end is connected to the nozzle through an interface of a first three-way connector, and a heating wire is provided around the phosphoric acid pipeline;

[0011] A cleaning liquid circuit is also provided in the accommodating chamber, and the cleaning liquid circuit includes a second liquid inlet valve and a deionized water pipeline. The second liquid inlet valve is fixedly connected to the base. One end of the deionized water pipeline is connected to the second liquid inlet valve, and the other end is connected to the nozzle through another interface of the first three-way joint.

[0012] As a further improvement of the present invention, the etching liquid circuit also has a connecting tube and a second three-way joint, one end of the connecting tube is connected to the third interface of the first three-way joint, the other end of the connecting tube is connected to an interface of the second three-way joint, the second interface of the second three-way joint is connected to the second tube body, and the third interface of the second three-way joint is connected to the nozzle.

[0013] As a further improvement of the present invention, the mounting plate is assembled at the top opening of the base through a supporting device, and the supporting device includes a fixing ring, and the fixing ring includes an annular connecting plate parallel to the plane of the wafer and a positioning ring vertically fixed to the opening of the annular connecting plate. The annular connecting plate is buckled on the top of the base and fixed through a connecting piece, and the inner and outer sides of the annular side wall of the transparent lampshade are respectively fitted with the inner wall of the positioning ring and the outer wall of the mounting plate.

[0014] As a further improvement of the present invention, the supporting device further comprises a supporting ring and a supporting plate, wherein the supporting ring is provided at the opening of the base and is coaxially assembled to the lower surface of the fixing ring, and the inner edge of the supporting ring extends away from the fixing ring to abut against the lower surface of the supporting plate;

[0015] An annular positioning step is formed on the inner side of the fixing ring, and the positioning step is in contact with the top surface and the annular side wall of the support plate. The transparent lampshade is provided with no less than two positioning columns along the diameter direction, and the positioning columns pass through the mounting plate and are embedded in the positioning groove formed on the top surface of the support plate.

[0016] As a further improvement of the present invention, four positioning columns are provided along the diameter direction of the transparent lampshade, the four positioning columns are hollow, a connecting hole is provided in the center of the positioning groove, a first positioning plate and a second positioning plate are provided under the supporting plate, the first positioning plate and the second positioning plate are respectively provided directly below the two positioning grooves, and the transparent lampshade is fixed to the first positioning plate and the second positioning plate respectively after passing through the hollow part of the positioning columns and the supporting plate through four connecting parts.

[0017] As a further improvement of the present invention, several of the heating lamp rings have two connecting columns, which pass vertically downward and are fixed to the supporting plate.

[0018] As a further improvement of the present invention, the nozzle is configured as a liquid outlet pipe integrally formed on the transparent lampshade, the liquid outlet pipe extends into the accommodating cavity and is connected to the third interface of the second three-way connector through a first adapter.

[0019] As a further improvement of the present invention, a second liquid circuit is provided in the accommodating cavity, the second liquid circuit has a liquid inlet pipe and a second adapter, the transparent lampshade has two liquid outlet pipes, and the two liquid outlet pipes are respectively connected to the first adapter and the second adapter.

[0020] Compared with the prior art, the beneficial effect of the present invention is that the mounting seat is assembled above the wafer supporting station. Specifically, the mounting seat is composed of a base and a mounting plate. The side of the mounting plate away from the base is used to coaxially assemble a number of heating lamp rings, and the number of heating lamp rings is located directly above the wafer. Furthermore, a receiving cavity is formed between the base and the mounting plate, and an etching liquid path is installed in the receiving cavity. The etching chemicals introduced into the etching liquid path are sprayed onto the surface of the wafer by a nozzle passing through the mounting plate, so that the wafer etching heating device designed in the present invention can simultaneously achieve the purpose of heating and etching the wafer surface. Compared with the prior art, while directly heating the surface (i.e., the front side) of the wafer, the heating device also has the function of spraying the etching liquid, and the heating power of the coaxially arranged heating lamp rings can be controlled separately to ensure that the inner and outer sides of the wafer achieve a consistent heating effect, thereby ensuring the etching effect of the wafer.

[0021] Secondly, the two liquid outlet pipes of the transparent lampshade on the side of the mounting plate away from the base pass through the mounting plate and connect to the first and second adapters of the etching liquid path and the second liquid path formed in the accommodating cavity. This design of the transparent lampshade first protects and positions the heating lamp ring. Secondly, the two liquid outlet pipes formed in the transparent lampshade connect with the first and second adapters to separate the fluid path of the heating device from the heating lamp ring and wiring, effectively preventing short circuits and further improving the safety and service life of the wafer etching heating device.

[0022] Finally, the etching liquid circuit is first composed of a first liquid inlet valve and a phosphoric acid pipeline, and a heating wire is arranged around the phosphoric acid pipeline. After the phosphoric acid is introduced into the accommodating chamber, it flows through the phosphoric acid pipeline and is heated to a suitable temperature and then sprayed onto the wafer surface through the nozzle to ensure the etching reaction effect. The etching liquid circuit also has a cleaning liquid circuit composed of a deionized water pipeline and a second liquid inlet valve. After the etching is completed, deionized water is introduced into the deionized water pipeline to rinse the wafer surface, thereby further achieving the purpose of rinsing the wafer. A second liquid circuit composed of a liquid inlet pipe and a second adapter is also provided in the accommodating chamber. By introducing other chemicals into the second liquid circuit, they can be sprayed on the wafer surface together with the phosphoric acid used for etching to adapt to different etching requirements on the wafer surface. Through the above design, the purpose of spraying at least four reagents other than phosphoric acid and deionized water onto the wafer surface can be achieved to meet various wafer processing requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a schematic diagram of the overall structure of the heating device for wafer etching in the present invention;

[0024] Figure 2 This is an exploded schematic diagram illustrating the specific structure of each part of the heating device for wafer etching in the present invention;

[0025] Figure 3 for Figure 1 Schematic diagram of the cross section along FF direction;

[0026] Figure 4 This is a schematic diagram of the structure of the arrangement of several heating lamp rings in the present invention;

[0027] Figure 5 for Figure 2 Enlarged view of part A in the middle;

[0028] Figure 6 for Figure 3 Enlarged view of middle part B;

[0029] Figure 7 for Figure 3 Enlarged view of middle C part;

[0030] Figure 8 It is a structural schematic diagram for reflecting the arrangement of the etching liquid path and the second liquid path in the present invention. DETAILED DESCRIPTION

[0031] The present invention is described in detail below with reference to the various embodiments shown in the accompanying drawings, but it should be noted that these embodiments are not limitations of the present invention, and any equivalent transformations or substitutions in functions, methods, or structures made by ordinary technicians in this field based on these embodiments are all within the scope of protection of the present invention.

[0032] Ginseng Figures 1 to 8 FIG. 1 shows a specific embodiment of a wafer etching heating device disclosed herein. Compared to the prior art, the device comprises a mounting base 1 comprising a base 2 and a mounting plate 3. The mounting plate 3, facing away from the base 2, is coaxially mounted with a plurality of heating lamp rings 31, which are positioned directly above a wafer (not shown). Furthermore, a chamber 21 is formed between the base 2 and the mounting plate 3. An etching liquid path 4 is provided within the chamber 21. The etching liquid is passed through a nozzle 51 extending through the mounting plate 3 and sprayed onto the wafer surface. This allows the wafer etching heating device of the present invention to simultaneously heat the wafer surface and spray the etching liquid. Compared to the prior art, the heating device directly heats the wafer surface (i.e., the front side) while also spraying the etching liquid. Furthermore, the coaxially mounted heating lamp rings can have their heating power controlled separately to ensure consistent heating of the wafer's inner and outer sides, thereby ensuring a consistent etching effect on the wafer.

[0033] Ginseng Figures 1 to 8 As shown, the heating device for wafer etching in this embodiment (hereinafter referred to as the etching heating device) includes a mounting seat 1, and a plurality of heating lamp rings 31 are installed on one side of the mounting seat 1. The plurality of heating lamp rings 31 are coaxially arranged and the inner diameters increase sequentially from the inside to the outside; the mounting seat 1 includes a base 2 and a mounting plate 3, and the base 2 and the mounting plate 3 form a receiving cavity 21. The plurality of heating lamp rings 31 are installed on the side of the mounting plate 3 away from the receiving cavity 21. An etching liquid path 4 is provided in the receiving cavity 21. The nozzle 51 of the etching liquid path 4 passes through the side of the mounting plate 3 where the heating lamp rings 31 are installed to spray etching liquid onto the surface of the wafer (not shown).

[0034] In this embodiment, the mounting base 1 is positioned entirely directly above a wafer support (not shown). Specifically, the base 2 is mounted above the wafer support, with the bottom surface of a mounting plate 3 connected to the base 2 positioned directly above the wafer. Furthermore, coaxially arranged heating lamp rings 31 of gradually increasing diameter are mounted on the bottom surface of the mounting plate 3. Because several heating lamp rings 31 are coaxially assembled and independently disposed, and more specifically, in this embodiment, the heating lamp rings 31 are configured as annular halogen lamps, the number of heating lamp rings 31 required to cover the wafer surface can be selectively activated based on the size of the wafer placed on the support. Halogen lamps offer the advantages of high brightness and low maintenance, making them suitable for heating the wafer surface. Specifically, in this embodiment, four coaxial heating lamp rings 31 are configured. It should be noted that, under normal circumstances, the heat radiation received by the inner side of the wafer (i.e., near the center of the circle) is more concentrated, and therefore the temperature is higher. Therefore, the heating power of the outer ring heating lamp ring 31 can be appropriately increased to achieve the purpose of uniform heating of all parts of the wafer surface. In this embodiment, several independently arranged heating lamp rings 31 respectively adjust the power through independently arranged power controllers (not shown), and the power controller increases the power of the outer ring heating lamp ring 31 accordingly to achieve the purpose of uniform heating of the inner side and edge of the wafer.

[0035] Furthermore, in this embodiment, the power of each heating lamp ring 31 can be further adjusted based on the wafer surface heating temperature. Specifically, multiple temperature sensors (not shown) located above the wafer can monitor the temperature at various locations on the wafer surface in real time, and the power of the corresponding heating lamp ring 31 above each location on the wafer can be adjusted accordingly, thereby achieving a more uniform heating temperature across the wafer surface. Furthermore, in this embodiment, a housing chamber 21 is formed between the base 2 and the mounting plate 3, and an etching liquid path 4 is assembled within the housing chamber 21. The nozzle 51 therein passes through the mounting plate 3 and sprays an etching agent, such as phosphoric acid, onto the wafer surface, thereby achieving the effect of simultaneously heating and etching the wafer surface, thus achieving a high level of integration.

[0036] Ginseng Figures 1 to 8As shown, a transparent lampshade 5 is mounted on the side of the mounting plate 3 facing away from the accommodating cavity 21. A nozzle 51 extends from the mounting plate 3 and then through the transparent lampshade 5 to spray etching solution onto the wafer surface. A receiving groove 32 is coaxially defined on the side of the mounting plate 3 facing away from the accommodating cavity 21 for accommodating a plurality of heating lamp rings 31. The nozzle 51 extends from the axis of the mounting plate 3. The plurality of heating lamp rings 31 are optionally halogen lamps, and the transparent lampshade 5 supports the tops of the plurality of heating lamp rings 31. The mounting plate 3 is assembled to the top opening of the base 2 via a supporting device 6. The supporting device 6 includes a fixing ring 61. The fixing ring 61 includes an annular connecting plate 611 parallel to the plane of the wafer and a positioning ring 612 fixed perpendicularly to the opening of the annular connecting plate 611. The annular connecting plate 611 is snap-fitted to the top of the base 2 and secured via a connector (not shown). The inner and outer sides of the annular sidewall of the transparent lampshade 5 respectively mate with the inner wall of the positioning ring 612 and the outer wall of the mounting plate 3.

[0037] Ginseng Figures 1 to 7 As shown, the supporting device 6 also includes a supporting ring 62 and a supporting plate 63. The supporting ring 62 is arranged at the opening of the base 2 and is coaxially assembled on the lower surface of the fixed ring 61. The inner edge of the supporting ring 62 extends in the direction away from the fixed ring 61 to abut the lower surface of the supporting plate 63; an annular positioning step 613 is formed on the inner side of the fixed ring 61, and the positioning step 613 is in contact with the top surface and the annular side wall of the supporting plate 63. The transparent lampshade 5 is provided with no less than two positioning columns 52 along the diameter direction. The positioning columns 52 pass through the mounting plate 3 and are embedded in the positioning groove 631 formed on the top surface of the supporting plate 63. Four positioning posts 52 are provided along the diameter of the transparent lampshade 5. These four positioning posts 52 are hollow, and a connecting hole 632 is centrally located in the positioning slot 631. A first positioning plate 64 and a second positioning plate 65 are provided below the support plate 63. The first and second positioning plates 64 and 65 are respectively located directly below the two positioning slots 631. The transparent lampshade 5 is secured to the first and second positioning plates 64 and 65 via four connecting members 66 that pass through the hollows of the positioning posts 52 and the support plate 63. Each of the heating lamp rings 31 has two connecting posts 311 that extend vertically downward and are secured to the support plate 63.

[0038] When assembling the etching heating equipment, first clamp the support plate 63 on the annular positioning step 613 of the fixing ring 61, and then make the support ring 62 fit the lower surface of the annular connecting plate 611 of the fixing ring 61 and support the lower surface of the support plate 63, thereby achieving the purpose of positioning the support plate 63 between the fixing ring 61 and the support ring 62. The heating lamp ring 31 is correspondingly embedded in several coaxially arranged receiving grooves 32 opened on the upper surface of the mounting plate 3. After the connecting column 311 of the heating lamp ring 31 passes through the bottom of the receiving groove 32, the connecting column 311 of each heating lamp ring 31 is passed through the corresponding hole formed on the support plate 63 again, and the connecting column 311 is fixed to the support plate 63 by a nut or other connecting part (not marked). The connecting column 311 can form a threaded section for assembling the nut (not shown). It should be noted that, in addition to achieving the purpose of positioning the heating lamp ring 31, the connecting column 311 also needs to serve as a terminal of each heating lamp ring 31 for connecting electricity in the receiving cavity 21. The specific circuit board structure is not shown in the drawings of the specification.

[0039] Finally, the transparent lampshade 5 is buckled onto the top of the mounting plate 3, and the side wall of the transparent lampshade 5 is fitted with the inner wall of the positioning ring 612 of the fixing ring 61, and the bottom wall thereof is embedded in the annular groove (not marked) formed on the top surface of the supporting plate 63. The four radially arranged positioning columns 52 of the transparent lampshade 5 pass through the mounting plate 3 and the bottom ends are embedded in the positioning grooves 631 formed on the upper surface of the supporting plate 63. Then, a connecting member 66 set as a bolt passes through the connecting hole 632 opened on the supporting plate 63 and is fixed to the first positioning plate 64 and the second positioning plate 65 with the nut 661. The upper surfaces of the first positioning plate 64 and the second positioning plate 65 form a top block 641 that abuts against the bottom surface of the supporting plate 63, and the bottom surface of the supporting plate 63 forms a support ring 634 that abuts against the upper surfaces of the first positioning plate 64 and the second positioning plate 65. Through the above design, the supporting device 6 as a whole, the transparent lampshade 5, the mounting plate 3 and the heating lamp ring 31 are fixed to each other as a whole, and then the fixing ring 61 is assembled on the top of the base 2 and docked with the nozzle 51 of the etching liquid circuit 4. The annular connecting plate 611 of the fixing ring 61, which is arranged to fit the top surface of the base 2, is fixed to the base 2 by bolts or other positioning parts, thereby completing the entire assembly process of the transparent lampshade 5, the heating lamp ring 31 and the mounting plate 3.

[0040] Ginseng Figure 2 、 Figure 3 as well as Figure 4As shown, the etching liquid circuit 4 includes a first liquid inlet valve 41 and a phosphoric acid pipeline 42. The first liquid inlet valve 41 is fixedly connected to the base 2. One end of the phosphoric acid pipeline 42 is connected to the first liquid inlet valve 41, and the other end is connected to the nozzle 51 through an interface of the first three-way joint 43. A heating wire 44 is provided around the phosphoric acid pipeline 42; a cleaning liquid circuit 45 is also provided in the accommodating cavity 21. The cleaning liquid circuit 45 includes a second liquid inlet valve 451 and a deionized water pipeline 452. The second liquid inlet valve 451 is fixedly connected to the base 2. One end of the deionized water pipeline 452 is connected to the second liquid inlet valve 451, and the other end is connected to the nozzle 51 through another interface of the first three-way joint 43.

[0041] Furthermore, the nozzle 51 is configured as a liquid outlet pipe 511 integrally formed with the transparent lampshade 5. The liquid outlet pipe 511 extends into the accommodating chamber 21 and is connected to the third port of the second three-way connector 46 through the first adapter 461. A second liquid path 48 is provided within the accommodating chamber 21. The second liquid path 48 has a liquid inlet pipe 481 and a second adapter 482. The transparent lampshade 5 has two liquid outlet pipes 511, which are respectively connected to the first adapter 461 and the second adapter 482. It should be noted that a clearance protrusion 633 is formed on the top surface of the support plate 63 for the liquid outlet pipe 511 to pass through. In the aforementioned process of fastening the transparent lampshade 5 to the mounting plate 3, the liquid outlet pipe 511 is passed through the clearance protrusion 633 and docked with the first adapter 461 and the second adapter 482. The top surface of the clearance protrusion 633 abuts against the lower surface of the mounting plate 3, so that a heat dissipation space is formed between the mounting plate 3 and the support plate 63, which is beneficial to the heat dissipation of the heat lamp ring 31 and provides effective support for the mounting plate 3.

[0042] Specifically, the base 2 forms a plurality of openings (not labeled) for connecting the liquid supply pipes (not shown) connected to the etching liquid path 4 and the second liquid path 48 to the accommodating chamber 21. The multiple liquid supply pipes are respectively connected to the first liquid inlet valve 41, the second liquid inlet valve 451, and the liquid inlet pipe 481. Phosphoric acid, an etching agent, is supplied through the first liquid inlet valve 41. As the phosphoric acid flows through the phosphoric acid line 42 connected to the first liquid inlet valve 41, it is heated to a suitable temperature by a heating wire 44 wound around the phosphoric acid line 42. The phosphoric acid then flows through the first three-way connector 43, the connecting line 462, and the second three-way connector 46. It is then sprayed onto the wafer surface through the liquid outlet pipe 511 connected to the first adapter 461, thereby heating the wafer while spraying the etching agent.

[0043] Furthermore, when it is necessary to spray other reagents on the wafer surface, the reagents are not limited to the aforementioned etching reagents, and can be other etching reagents other than phosphoric acid, or other reagents required in the wafer manufacturing process that do not require heating. The liquid supply pipe of such reagents is connected to the second tube body 47. After the reagents pass into the second tube body 47, they pass into the first adapter 461 through the second three-way joint 46, and are also sprayed onto the wafer surface through the liquid outlet pipe 511 connected to the first adapter 461. The design purpose of the second liquid path 48 in this embodiment is consistent with the aforementioned second tube body 47. The reagents that do not require heating flow into the liquid inlet pipe 481 through the liquid supply pipe and then pass through the second adapter 482 and the liquid outlet pipe 511 connected to the second adapter 482 to be sprayed onto the wafer surface. Unlike the second tube body 47, the reagents flowing into the liquid inlet pipe 481 can be sprayed onto the wafer surface together with the phosphoric acid flowing into the phosphoric acid line 42 through two liquid outlet pipes 511.

[0044] Finally, after the etching agent is sprayed, deionized water is introduced through the liquid supply (not marked) connected to the second liquid inlet valve 451. The deionized water flows through the deionized water pipeline 452, the first three-way joint 43, the connecting pipeline 462 and the second three-way joint 46, and is then sprayed onto the wafer surface through the liquid outlet pipe 511 connected to the first adapter 461, thereby achieving the purpose of rinsing the wafer surface. Through the design of the above-mentioned etching liquid path 4 as a whole and the second liquid path 48, the purpose of spraying phosphoric acid, deionized water and at least two other types of chemicals onto the wafer surface can be met. In addition to protecting the heating lamp ring 31, the transparent lampshade 5 also has the effect of connecting with the etching liquid path 4 and the second liquid path 48 through its two integrally formed liquid outlet pipes 511 to serve as a nozzle 51 for spraying chemicals, thereby achieving the purpose of separating the fluid liquid path in the heating equipment from the heating lamp ring 31 and the circuit, having a sealing and isolation effect while being beneficial to the flow of chemicals, taking into account the effects of spraying the etching chemicals and uniformly heating the wafer surface and effectively avoiding the occurrence of short circuits, thereby improving the safety and service life of the heating equipment for wafer etching and further improving the overall integration of the etching heating equipment.

[0045] The series of detailed descriptions listed above are only specific descriptions of feasible implementation methods of the present invention. They are not intended to limit the scope of protection of the present invention. Any equivalent implementation methods or changes that do not deviate from the technical spirit of the present invention should be included in the scope of protection of the present invention.

[0046] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the invention is defined by the appended claims, not the foregoing description, and all variations within the meaning and range of equivalents of the claims are intended to be included therein. Any reference sign in a claim should not be construed as limiting the claim to which it relates.

[0047] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

Claims

1. A heating device for wafer etching, characterized in that: include: A mounting seat, with a plurality of heating lamp rings mounted on one side of the mounting seat, wherein the plurality of heating lamp rings are coaxially arranged and have inner diameters that increase sequentially from the inside to the outside; The mounting seat includes a base and a mounting plate, wherein the base and the mounting plate enclose a receiving cavity, wherein a plurality of heating lamp rings are mounted on a side of the mounting plate away from the receiving cavity, wherein an etching liquid path is provided in the receiving cavity, and a nozzle of the etching liquid path extends from a side of the mounting plate where the heating lamp rings are mounted to spray etching liquid onto the wafer surface; A transparent lampshade is installed on the side of the mounting plate away from the accommodating cavity, and the nozzle passes through the mounting plate and then through the transparent lampshade to spray the etching liquid onto the wafer surface; The etching liquid circuit includes a first liquid inlet valve and a phosphoric acid pipeline. The first liquid inlet valve is fixedly connected to the base. One end of the phosphoric acid pipeline is connected to the first liquid inlet valve, and the other end is connected to the nozzle through an interface of a first three-way connector. A heating wire is provided around the phosphoric acid pipeline. The etching liquid circuit further comprises a connecting pipe and a second three-way joint, one end of the connecting pipe is connected to the third interface of the first three-way joint, the other end of the connecting pipe is connected to one interface of the second three-way joint, the second interface of the second three-way joint is connected to the second pipe body, and the third interface of the second three-way joint is connected to the nozzle; The nozzle is configured as a liquid outlet pipe integrally formed with the transparent lampshade, the liquid outlet pipe extending into the accommodating cavity and connected to the third interface of the second three-way connector through the first adapter; The mounting plate is assembled at the top opening of the base through a supporting device, and the supporting device includes a fixing ring, and the fixing ring includes an annular connecting plate parallel to the plane where the wafer is located and a positioning ring fixed vertically to the opening of the annular connecting plate. The annular connecting plate is buckled on the top of the base and fixed by a connecting piece. The inner side and outer side of the annular side wall of the transparent lampshade are respectively in contact with the inner wall of the positioning ring and the outer wall of the mounting plate; The supporting device further includes a supporting ring and a supporting plate, wherein the supporting ring is provided at the opening of the base and is coaxially assembled on the lower surface of the fixing ring, and the inner edge of the supporting ring extends away from the fixing ring to abut against the lower surface of the supporting plate; An annular positioning step is formed on the inner side of the fixing ring, and the positioning step is in contact with the top surface and the annular side wall of the support plate. The transparent lampshade is provided with no less than two positioning columns along the diameter direction, and the positioning columns pass through the mounting plate and are embedded in the positioning groove formed on the top surface of the support plate.

2. The wafer etching heating device according to claim 1, wherein: The mounting plate is coaxially provided with a receiving groove for receiving a plurality of heating lamp rings on one side away from the receiving cavity. The nozzle passes through the axis of the mounting plate. The plurality of heating lamp rings are optionally halogen lamps. The transparent lampshade supports the top of the plurality of heating lamp rings.

3. The wafer etching heating device according to claim 1, wherein: A cleaning liquid circuit is also provided in the accommodating chamber, and the cleaning liquid circuit includes a second liquid inlet valve and a deionized water pipeline. The second liquid inlet valve is fixedly connected to the base. One end of the deionized water pipeline is connected to the second liquid inlet valve, and the other end is connected to the nozzle through another interface of the first three-way joint.

4. The wafer etching heating device according to claim 1, wherein: Four positioning posts are provided along the diameter direction of the transparent lampshade, and the four positioning posts are hollow. A connecting hole is provided in the center of the positioning groove. A first positioning plate and a second positioning plate are provided below the supporting plate. The first positioning plate and the second positioning plate are respectively provided directly below the two positioning grooves. The transparent lampshade is fixed to the first positioning plate and the second positioning plate respectively after passing through the hollow parts of the positioning posts and the supporting plate through four connecting parts.

5. The wafer etching heating device according to claim 4, wherein: Several of the heating lamp rings have two connecting columns, which pass vertically downward and are fixed to the supporting plate.

6. The wafer etching heating device according to claim 5, wherein: A second liquid circuit is provided in the accommodating cavity. The second liquid circuit has a liquid inlet pipe and a second adapter. The transparent lampshade has two liquid outlet pipes, which are respectively connected to the first adapter and the second adapter.

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