Semiconductor device and etching method

Abstract

The invention provides semiconductor equipment and an etching method, the semiconductor equipment comprises a temperature adjusting device arranged in a base, the temperature adjusting device comprises a temperature regulator and a support device, the temperature regulator is arranged on the support device and can move in the base through the support device, and the temperature regulator is arranged on the support device and can move in the base through the support device. The temperature regulator can increase and / or reduce the temperature of the base, local temperature control can be realized through the temperature regulation device, and the reliability of the etching method realized by using the semiconductor equipment can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor device and an etching method. Background Art

[0002] In the etching chamber, the temperature control of the electric static chuck (ESC) is achieved by heating up the heater (Heater) and cooling down the coolant circulation in the refrigerator (Chiller). The heater generally heats up the entire surface of the electrostatic chuck, and the refrigerator controls the temperature of the circulating liquid to adjust the temperature of the electrostatic chuck as a whole. The temperature of the electrostatic chuck directly affects the physical and chemical reactions of the etching process, and then affects the etching morphology and critical dimensions. Changing the temperature of the electrostatic chuck to control the critical dimensions is a common method for optimizing etching conditions (recipe). For problems where the local critical dimensions are too large or too small, it is difficult to optimize by controlling the local temperature, which poses a challenge to the etching process. Summary of the invention

[0003] The object of the present invention is to provide a semiconductor device and an etching method to solve the problem that it is difficult to control the local temperature in the prior art.

[0004] In order to solve the above technical problems, the present invention provides a semiconductor device, the semiconductor device comprising:

[0005] Pedestal;

[0006] A heater disposed in the base, the heater being capable of raising the temperature of the base;

[0007] a refrigerator disposed in the base, the refrigerator being capable of lowering the temperature of the base; and

[0008] A temperature regulating device is arranged in the base, and the temperature regulating device includes a temperature regulator and a supporting device. The temperature regulator is arranged on the supporting device and can move in the base through the supporting device. The temperature regulator can increase and / or decrease the temperature of the base.

[0009] Optionally, in the semiconductor device, the supporting device includes a first supporting structure, the first supporting structure is movable within the base, and the temperature regulator is disposed on the first supporting structure.

[0010] Optionally, in the semiconductor device, the first supporting structure is capable of extending and retracting; or, the temperature regulator is capable of moving along the first supporting structure.

[0011] Optionally, in the semiconductor device, the support device further includes a second support structure; the second support structure is a groove formed on the inner wall of the base, or the second support structure is a guide rail provided on the inner wall of the base; the first support structure can move along the second support structure.

[0012] Optionally, in the semiconductor device, the second support structure is located in a movement plane, and the movement plane is parallel to the upper surface of the base; the second support structure is in a continuous annular structure, or the second support structure is in an annular structure with one or more break ports.

[0013] Optionally, in the semiconductor device, the support device includes one or more of the first support structures, the temperature adjustment device includes one or more of the temperature regulators, and at least one temperature regulator is provided on each first support structure.

[0014] Optionally, in the semiconductor device, the support device includes a third support structure and a fourth support structure connected to the third support structure, the third support structure and / or the fourth support structure are connected to the inner wall of the base, and the temperature regulator can move along the third support structure and / or the fourth support structure.

[0015] Optionally, in the semiconductor device, the support device includes a plurality of the third support structures and a plurality of the fourth support structures, and the plurality of the third support structures and the plurality of the fourth support structures are connected to form a mesh structure, and the third support structure and the fourth support structure are respectively a linear structure or an annular structure.

[0016] Optionally, in the semiconductor device, the heater is closest to the upper surface of the base, the refrigerator is farthest from the upper surface of the base, and the temperature adjustment device is located between the heater and the refrigerator.

[0017] Optionally, in the semiconductor device, the semiconductor device includes one temperature adjustment device; or a plurality of temperature adjustment devices, and the plurality of temperature adjustment devices are arranged along the axial direction of the base.

[0018] Optionally, in the semiconductor device, the temperature regulator can increase and / or decrease the temperature of the base.

[0019] Optionally, in the semiconductor device, the semiconductor device further includes a controller, and the controller is connected to the temperature adjustment device to control the movement of the temperature regulator in the base.

[0020] Optionally, in the semiconductor device described above, the semiconductor device is an electrostatic chuck.

[0021] The present invention also provides an etching method implemented using the semiconductor device described in any one of the above, and the etching method includes:

[0022] Obtain a thermal map of the etching process for a batch of wafers;

[0023] Obtain the feature size deviation region in the thermal map;

[0024] Use a temperature adjustment device to adjust the temperature of the base surface corresponding to the feature size deviation region; and,

[0025] Set the wafer to be etched on the base after being adjusted by the temperature adjustment device and perform the etching process.

[0026] In the semiconductor device and the etching method provided by the present invention, the semiconductor device includes a temperature adjustment device disposed in the base. The temperature adjustment device includes a temperature regulator and a support device. The temperature regulator is disposed on the support device and can move in the base through the support device. The temperature regulator can increase and / or decrease the temperature of the base. Through the temperature adjustment device, local temperature control can be achieved, and the reliability of the etching method implemented using the semiconductor device can be improved. Description of the Drawings

[0027] Figure 1 It is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention.

[0028] Figure 2 It is a schematic structural diagram of a temperature adjustment device according to an embodiment of the present invention.

[0029] Figure 3 It is a schematic structural diagram of another temperature adjustment device according to an embodiment of the present invention.

[0030] Figure 4 It is a schematic structural diagram of another temperature adjustment device according to an embodiment of the present invention.

[0031] Figure 5 It is a schematic structural diagram of another temperature adjustment device according to an embodiment of the present invention.

[0032] Figure 6 It is a schematic structural diagram of another semiconductor device according to an embodiment of the present invention.

[0033] Figure 7 It is a schematic diagram of a thermal map of a wafer according to an embodiment of the present invention.

[0034] Among them, the description of the reference numerals is as follows:

[0035] 1 - Semiconductor device; 2 - Wafer; 100 - Base; 200 - Heater; 300 - Chiller; 400 - Temperature regulating device; 410 - Temperature regulator; 420 - Support device; 421 - First support structure; 422 - Second support structure; 4220 - Interruption port; 423 - Third support structure; 424 - Fourth support structure; 500 - Controller; 600 - Thermal map; 610 - Feature size deviation area.

[0036] L1, L2 - Length; D1, D2 - Nodes. Detailed implementation

[0037] In existing semiconductor devices, only whole - surface heating or cooling can be performed, and it is difficult to perform local temperature regulation. The present invention provides a semiconductor device that can achieve local temperature control through a temperature regulating device, which can improve the reliability of semiconductor processes implemented using the semiconductor device.

[0038] The semiconductor device and etching method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are in very simplified forms and use non - precise scales, only for conveniently and clearly assisting in explaining the purpose of the embodiments of the present invention.

[0039] The terms used in the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. Unless otherwise defined in this application document, the technical terms or scientific terms used in the present invention shall have the ordinary meaning as understood by those of ordinary skill in the art to which the present invention pertains. The terms "first", "second" and similar words used in the specification and claims of the present invention do not denote any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "a" or "an" do not denote a quantity limitation, but mean that there is at least one. "Plurality" or "several" means two or more. Unless otherwise indicated, words such as "upper / upper layer", "lower / lower layer" are only for convenience of description and are not limited to a position or a spatial orientation. Words such as "comprising" or "including" mean that the elements or items appearing before "comprising" or "including" cover the elements or items listed after "comprising" or "including" and their equivalents, and do not exclude other elements or items. Words such as "connected" or "coupled" are not limited to physical or mechanical connections, and may include electrical connections, whether direct or indirect. The singular forms "a", "the" and "said" used in the specification and appended claims of the present invention are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the term "and / or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.

[0040] Please refer to Figures 1 to 6 , wherein, Figure 1 and Figure 6 are schematic structural diagrams of the semiconductor device according to an embodiment of the present invention; Figures 2 to 5 is a schematic structural diagram of the temperature regulating device according to an embodiment of the present invention.

[0041] As Figures 1 to 6 shown, an embodiment of the present application provides a semiconductor device 1, the semiconductor device 1 includes: a base 100; a heater 200 disposed in the base 100, the heater 200 being capable of raising the temperature of the base 100; a refrigerator 300 disposed in the base 100, the refrigerator 300 being capable of lowering the temperature of the base 100; and a temperature regulating device 400 disposed in the base 100, the temperature regulating device 400 including a temperature regulator 410 and a support device 420, the temperature regulator 410 being disposed on the support device 420 and being capable of moving within the base 100 through the support device 420, the temperature regulator 410 being capable of raising and / or lowering the temperature of the base 100.

[0042] In some embodiments of the present application, the temperature regulator 410 moves within a moving surface, and the moving surface is parallel to the upper surface of the base 100. As Figure 1 shown, in some embodiments of the present application, the moving surface is a horizontal plane.

[0043] As Figure 1 shown, the heater 200 is a flat heater, which can heat the entire surface of the base 100. In some embodiments of the present application, the heater 200 can raise the temperature of the entire upper surface of the base 100, and the upper surface of the base 100 can be used as a bearing surface, for example, to bear the wafer 2. Accordingly, the wafer 2 disposed on the upper surface of the base 100 can be heated evenly across the surface. Among them, the heater 200 can adopt any existing heating method, such as resistance heating, etc., and the present application does not limit this.

[0044] In the embodiments of the present application, the chiller 300 also realizes the overall surface cooling of the base 100 by means of overall surface temperature control. For example, the chiller 300 is a bent pipe structure, which is wound into a shape corresponding to the upper surface of the base 100, and a coolant is passed through the bent pipe structure, so that the upper surface of the base 100 can be cooled evenly across the surface. Accordingly, the wafer 2 disposed on the upper surface of the base 100 can be cooled evenly across the surface. The chiller 300 can also adopt other existing cooling methods, and the present application does not limit this.

[0045] Please continue to refer to Figure 1 , in the embodiments of the present application, the temperature regulating device 400 is disposed between the heater 200 and the chiller 300. Mainly, the temperature regulator 410 is disposed between the heater 200 and the chiller 300. Among them, the heater 200 is closest to the upper surface of the base 100, the temperature regulating device 400 is the second, and the chiller 300 is the farthest from the upper surface of the base 100. The heater 200 can increase the temperature of the upper surface of the base 100, the temperature regulator 410 can increase and / or decrease the temperature of the upper surface of the base 100, and the chiller 300 can decrease the temperature of the upper surface of the base 100. Thus, by disposing the temperature regulator 410 between the heater 200 and the chiller 300, the heating function module and the cooling function module are concentrated, so that the temperature of the base 100 can be regulated better and more efficiently.

[0046] As Figure 2As shown, in some embodiments of the present application, the support device 420 includes a first support structure 421, the first support structure 421 can move within the base 100, and the temperature regulator 410 is disposed on the first support structure. In the embodiments of the present application, the movement trajectory of the first support structure 421 is located on the movement surface, that is, the first support structure 421 can move within the movement surface. By moving the first support structure 421, the temperature regulator 410 can be driven to move, that is, the position of the temperature regulator 410 is changed, so that the temperature regulator 410 can adjust the temperature of the upper surface of the corresponding base 100.

[0047] In some embodiments of the present application, the first support structure 421 can be telescopic. As Figure 2 shown, for example, the length of the first support structure 421 can vary between a length L1 and a length L2, so that the position of the temperature regulator 410 is changed, so that the temperature regulator 410 can adjust the temperature of the upper surface of the corresponding base 100.

[0048] In some other embodiments of the present application, the temperature regulator 410 can move along the first support structure 421. As Figure 3 shown, for example, the temperature regulator 410 can move between a node D1 and a node D2 on the first support structure 421, so that the position of the temperature regulator 410 is changed, so that the temperature regulator 410 can adjust the temperature of the upper surface of the corresponding base 100.

[0049] Please continue to refer to Figure 2 , in some embodiments of the present application, the support device 420 further includes a second support structure 422. Among them, the second support structure 422 can be a guide rail provided on the inner wall of the base 100. Among them, the second support structure 422 can be fixed on the side wall of the base 100 between the heater 200 and the refrigerator 300. In some other embodiments of the present application, the second support structure 422 can also be a groove opened on the inner wall of the base 100. For example, a groove can be opened on the inner wall of the base 100 between the heater 200 and the refrigerator 300 to form the second support structure 422. One end of the first support structure 421 can be disposed on the second support structure 422 and can move along the second support structure 422 to conveniently realize the movement of the first support structure 421 within the base 100.

[0050] In some embodiments of the present application, the second support structure 422 is located in the movement plane parallel to the upper surface of the base 100. Thus, the first support structure 421 can move within the movement plane and drive the temperature regulator 410 to move within the movement plane.

[0051] As Figure 2 shown, in some embodiments of the present application, the second support structure 422 has a continuous annular structure. Among them, the second support structure 422 can have a circular ring structure to facilitate the movement of the first support structure 421 along the second support structure 422.

[0052] As Figure 3 shown, in some other embodiments of the present application, the second support structure 422 can also have an annular structure with one or more break ports 4220. The movement of the first support structure 421 can also be limited by the break ports 4220, so that the movement of the first support structure 421 can be controlled more simply, and the reliability of the semiconductor device 1 can be improved.

[0053] As Figure 2 shown, in some embodiments of the present application, the support device 420 can include one first support structure 421, and the temperature adjustment device 400 can also include one temperature regulator 410, and the temperature regulator 410 is arranged on the first support structure 421. This makes the movement trajectory of the temperature adjustment device 400 simple, so that the movement of the first support structure 421 and / or the temperature regulator 410 can be controlled simply, and the reliability of the semiconductor device 1 can be improved.

[0054] As Figure 3 shown, in some other embodiments of the present application, the support device 420 can also include a plurality of first support structures 421. The temperature adjustment device 400 can also include a plurality of temperature regulators 410. Among them, at least one temperature regulator 410 is arranged on each first support structure 421. For example, for some first support structures 421, one temperature regulator 410 is arranged on each first support structure 421; for some other first support structures 421, a plurality of temperature regulators 410 are arranged on each first support structure 421. Thus, the movement trajectory of the temperature adjustment device 400 can be enriched to more precisely adjust the temperature of the upper surface of the base 100.

[0055] Among the multiple first support structures 421, the structures of the first support structures 421 may be the same or different. In some embodiments of the present application, the telescopic lengths of the first support structures 421 may be the same or different. For example, each of the first support structures 421 can telescopically move between the inner surface of the second support structure 422 and the center of the second support structure 422. That is, the telescopic length of each of the first support structures 421 is between 0 and the radius of the second support structure 422. For another example, some or all of the first support structures 421 may also have a longer telescopic length. For example, the telescopic length may be between 0 and the diameter of the second support structure 422. In some other embodiments of the present application, the temperature regulators 410 provided on each of the first support structures 421 can move on the first support structure 421, and the lengths of their movement can be the same or different.

[0056] Among the multiple temperature regulators 410, in some embodiments of the present application, each temperature regulator 410 can increase and decrease the temperature of the base 100. That is, each temperature regulator 410 has both the functions of heating and cooling at the same time, and it can heat or cool the base 100 as needed. Among them, the temperature regulator 410 can be a semiconductor temperature regulation device, a ceramic temperature control device, etc., which are devices with both heating and cooling functions.

[0057] In some other embodiments of the present application, among the multiple temperature regulators 410, each temperature regulator 410 only has the function of increasing or decreasing the temperature of the base 100. That is, each temperature regulator 410 has a single heating function or a single cooling function. Thereby, the reliability of the temperature regulator 410 can be improved, and the reliability of the semiconductor device 1 can also be improved. Among them, the temperature regulator 410 can be a semiconductor heater with a heating function, etc., and the temperature regulator 410 can also be a condensing tube with a cooling function, etc.

[0058] As Figure 2 and Figure 3 shown, the shape of the temperature regulator 410 can be regular shapes such as square, circular, triangular, etc., or irregular shapes. In some embodiments of the present application, the area of the temperature control surface of the temperature regulator 410 is 1% - 25% of the area of the upper surface of the base 100, so as to combine the fineness and efficiency of local temperature control.

[0059] Please refer to Figure 4 and Figure 5, in some other embodiments of the present application, the support device 420 includes a third support structure 423 and a fourth support structure 424 connected to the third support structure 423. The third support structure 423 and / or the fourth support structure 424 are connected to the inner wall of the base 100, and the temperature regulator 410 can move along the third support structure 423 and / or the fourth support structure 424.

[0060] As Figure 4 shown, in some embodiments of the present application, both the third support structure 423 and the fourth support structure 424 are connected to the inner wall of the base 100. The temperature regulator 410 can move along the third support structure 423 and the fourth support structure 424. For example, the temperature regulator 410 can first move along the fourth support structure 424, and then transfer to move along the third support structure 423 after passing through the connection point between the two; for another example, the temperature regulation device 400 includes at least two temperature regulators 410, wherein at least one temperature regulator 410 can move along the third support structure 423, and at least one temperature regulator 410 can move along the fourth support structure 424.

[0061] As Figure 5 shown, in some other embodiments of the present application, only the third support structure 423 may be connected to the inner wall of the base 100; and the fourth support structure 424 is connected to the third support structure 423, but not connected to the inner wall of the base 100. Among them, the temperature regulator 410 may only be able to move along the fourth support structure 424; or, the temperature regulator 410 may move along the third support structure 423 and the fourth support structure 424.

[0062] In some embodiments of the present application, the support device 420 may include a plurality of the third support structures 423 and a plurality of the fourth support structures 424. The plurality of third support structures 423 and the plurality of fourth support structures 424 are connected to form a mesh structure to more finely adjust the temperature of the upper surface of the base 100.

[0063] Among them, the shapes of the third support structure 423 and the fourth support structure 424 may be linear structures and / or annular structures. For example Figure 4 shown, in some embodiments of the present application, both the third support structure 423 and the fourth support structure 424 are linear structures, and here they are all straight rods. In some other embodiments of the present application, as Figure 5 shown, the third support structure 423 is a linear structure, and the fourth support structure 424 is an annular structure. As Figure 5As shown, the support device 420 may include three fourth support structures 424 in a ring structure, and one temperature regulator 410 is provided on each of the fourth support structures 424. Each temperature regulator 410 can only move on the corresponding fourth support structure 424, so as to avoid collision between the temperature regulators 410, and can reliably and finely adjust the temperature of the upper surface of the base 100.

[0064] In some embodiments of the present application, the semiconductor device 1 includes one temperature regulation device 400, as Figure 5 shown. In some other embodiments of the present application, the semiconductor device 1 may include a plurality of temperature regulation devices 400, as Figure 6 shown. Among them, the plurality of temperature regulation devices 400 are arranged along the axial direction of the base 100. That is, the plurality of temperature regulation devices 400 are all located between the heater 200 and the refrigerator 300, and are arranged in sequence from the refrigerator 300 to the heater 200. The temperature of the upper surface of the base 100 can be adjusted more finely by the plurality of temperature regulation devices 400. At the same time, it can also be used as a redundant backup to further improve the reliability of the temperature regulation device 400.

[0065] Among them, for the plurality of temperature regulation devices 400, their structures may be the same or different. For example, the plurality of temperature regulation devices 400 may all adopt the Figure 2 structure shown; a part of the plurality of temperature regulation devices 400 may also adopt the Figure 3 structure shown, and a part may adopt the Figure 4 structure shown, etc.

[0066] In some embodiments of the present application, the semiconductor device 1 further includes a controller 500, and the controller 500 is connected to the temperature regulation device 400 to control the movement of the temperature regulator 410 in the base 100. For example, the controller 500 may be physically connected to the first support structure 421 to control the expansion, contraction and / or movement of the first support structure 421, so as to control the position of the temperature regulator 410 in the base 100. Among them, the physical connection may be, for example, a lead screw connection. Another example is that the controller 500 may be signal-connected to the temperature regulator 410 to control the movement of the temperature regulator 410 on the support device 420, so as to control the position of the temperature regulator 410 in the base 100. Among them, the signal connection may be, for example, a Bluetooth connection.

[0067] In an embodiment of the present application, the semiconductor device 1 is an electrostatic chuck for use in a semiconductor etching process. In other embodiments of the present application, the semiconductor device 1 may also be a carrier stage, which can further be used in deposition process equipment, lithography process equipment, etc.

[0068] Furthermore, an embodiment of the present application also provides an etching method using the semiconductor device 1. The etching method includes:

[0069] Step S10: Obtain a thermal map of the etching process for a batch of wafers;

[0070] Step S20: Obtain the feature size deviation region in the thermal map;

[0071] Step S30: Use a temperature adjustment device to adjust the temperature of the base surface corresponding to the feature size deviation region; and,

[0072] Step S40: Place a wafer to be etched on the base after being adjusted by the temperature adjustment device and perform the etching process.

[0073] Specifically, during the semiconductor etching process, an online thermal map 600 of a batch of wafers can be collected using a scanning electron microscope (SEM), and the feature size deviation region 610 can be obtained based on the values in the thermal map 600. For example, in an embodiment of the present application, it is obtained from the thermal map 600 that the feature size deviation region 610 is located in the left region of the figure and the temperature is relatively high. Correspondingly, before performing the etching process on the next batch of wafers, the temperature adjustment device 400 is used to adjust the temperature of the base surface 100 corresponding to the feature size deviation region 610.

[0074] For example, the first support structure 421 can be moved to drive the temperature regulator 410, so that the temperature regulator 410 moves below the base surface 100 corresponding to the feature size deviation region 610; then, the temperature regulator 410 activates the cooling function to lower the temperature of the upper surface of the base 100 corresponding to the feature size deviation region 610, thereby solving the problem of the relatively high local temperature of the upper surface of the base 100 corresponding to the feature size deviation region 610.

[0075] Next, a wafer to be etched is placed on the base 100 after being adjusted by the temperature adjustment device 400, that is, the etching process is performed on the next batch of wafers. Since the temperature of the base 100 is locally adjusted by the temperature adjustment device 400, the problem of the originally relatively high temperature region is reduced, making the temperature of the entire upper surface of the base 100 more uniform and balanced. Thus, when performing the etching process on the next batch of wafers, the feature size deviation can be reduced or eliminated, improving the reliability of the semiconductor process.

[0076] As can be seen from the above, in the semiconductor device 1 and the etching method provided by the present invention, the semiconductor device 1 includes a temperature regulating device 400 disposed in a base 100. The temperature regulating device 400 includes a temperature regulator 410 and a support device 420. The temperature regulator 410 is disposed on the support device 420 and can move within the base 100 through the support device 420. The temperature regulator 410 can increase and / or decrease the temperature of the base 100. Through the temperature regulating device 400, local temperature control can be achieved, and the reliability of the etching method implemented by using the semiconductor device 1 can be improved.

[0077] In this application, the reference to "one embodiment" or "some embodiments" means that the features, structures, or characteristics described in connection with the embodiment are included in at least one embodiment or at least some embodiments of this application. Therefore, the appearances of the phrases "in one embodiment" or "in some embodiments" throughout this application are not necessarily referring to the same or the same set of embodiments. In addition, in one or more embodiments, the features, structures, or characteristics can be combined in any suitable combination and / or sub-combination.

[0078] Although some specific embodiments of this application have been described in detail by way of examples, those skilled in the art should understand that the above examples are only for illustration and not for limiting the scope of this application. The various embodiments of this application can be combined arbitrarily without departing from the spirit and scope of this application. Those skilled in the art should also understand that various modifications can be made to the embodiments without departing from the scope and spirit of this application. The scope of this application is defined by the appended claims.

Claims

1. A semiconductor device, characterized in that: The semiconductor device comprises: Pedestal; A heater disposed in the base, the heater being capable of raising the temperature of the base; a refrigerator disposed in the base, the refrigerator being capable of lowering the temperature of the base; and A temperature regulating device is arranged in the base, and the temperature regulating device includes a temperature regulator and a supporting device. The temperature regulator is arranged on the supporting device and can move in the base through the supporting device. The temperature regulator can increase and / or decrease the temperature of the base.

2. The semiconductor device according to claim 1, wherein: The supporting device comprises a first supporting structure, wherein the first supporting structure is movable in the base, and the temperature regulator is arranged on the first supporting structure.

3. The semiconductor device according to claim 2, wherein: The first supporting structure can be extended or retracted; or the temperature regulator can be moved along the first supporting structure.

4. The semiconductor device according to claim 2, wherein: The supporting device also includes a second supporting structure; the second supporting structure is a groove opened on the inner wall of the base, or the second supporting structure is a guide rail arranged on the inner wall of the base; the first supporting structure can move along the second supporting structure.

5. The semiconductor device according to claim 4, wherein: The second supporting structure is located in a moving surface, and the moving surface is parallel to the upper surface of the base; the second supporting structure is a continuous annular structure, or the second supporting structure is an annular structure with one or more interruptions.

6. The semiconductor device according to claim 2, wherein: The supporting device includes one or more of the first supporting structures, and the temperature regulating device includes one or more of the temperature regulators. At least one of the temperature regulators is disposed on each of the first supporting structures.

7. The semiconductor device according to claim 1, wherein: The supporting device includes a third supporting structure and a fourth supporting structure connected to the third supporting structure, the third supporting structure and / or the fourth supporting structure are connected to the inner wall of the base, and the temperature regulator can move along the third supporting structure and / or the fourth supporting structure.

8. The semiconductor device according to claim 7, wherein: The supporting device comprises a plurality of the third supporting structures and a plurality of the fourth supporting structures, wherein the plurality of the third supporting structures and the plurality of the fourth supporting structures are connected to form a mesh structure, and the third supporting structures and the fourth supporting structures are respectively linear structures or annular structures.

9. The semiconductor device according to any one of claims 1 to 8, wherein: The heater is closest to the upper surface of the base, the refrigerator is farthest from the upper surface of the base, and the temperature adjustment device is located between the heater and the refrigerator.

10. The semiconductor device according to claim 9, wherein: The semiconductor device includes one temperature regulating device; or, a plurality of temperature regulating devices, wherein the plurality of temperature regulating devices are arranged along the axial direction of the base.

11. The semiconductor device according to any one of claims 1 to 8, wherein: The temperature regulator is capable of increasing and / or decreasing the temperature of the susceptor.

12. The semiconductor device according to any one of claims 1 to 8, wherein: The semiconductor device further includes a controller connected to the temperature adjustment device to control the movement of the temperature adjustment device within the base.

13. The semiconductor device according to any one of claims 1 to 8, wherein: The semiconductor device is an electrostatic chuck.

14. An etching method implemented by using the semiconductor device according to any one of claims 1 to 13, characterized in that: The etching method comprises: Get a thermal map of the etching process for a batch of wafers; Obtaining a characteristic size deviation area in the thermal map; Using a temperature regulating device to adjust the surface temperature of the susceptor corresponding to the characteristic size deviation area; and, The wafer to be etched is placed on the base adjusted by the temperature regulating device and an etching process is performed.

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