Display device and manufacturing method thereof

Abstract

Disclosed are a display device and a method of manufacturing the same, which are capable of effectively preventing moisture permeation of a side surface while achieving simplification of a process. The display device includes: a back plate; a display panel bonded to the back plate; a cover glass bonded to the display panel; and a sealing member configured to seal a side surface of the display panel and formed of a fusible metal.

Description

[0001] Cross - reference to related applications

[0002] This application claims the benefit of Korean Patent Application No. 10 - 2023 - 0180910, filed on December 13, 2023, which is hereby incorporated by reference in its entirety as if fully set forth herein. Technical Field

[0003] The present disclosure relates to a display device and a method of manufacturing the same, and more particularly, to a display device and a method of manufacturing the same that can effectively prevent moisture penetration through a side surface while simplifying a process. Background Art

[0004] In recent years, with the advent of the information age, the field of displays configured to visually express electrical information signals has rapidly developed. Accordingly, various flat - panel display devices having excellent properties such as being thin, light, and low - power consumption have been developed and used.

[0005] As specific examples of such flat - panel display devices, there may be a liquid crystal display (LCD) device, an organic light - emitting display (OLED) device, an electrophoretic display (EPD) device, a plasma display panel (PDP) display device, an electro - wetting display (EWD) device, etc. In particular, an organic light - emitting display device is a next - generation display device having a self - emitting characteristic and has excellent characteristics in terms of viewing angle, contrast ratio, response time, power consumption, etc. compared to a liquid crystal display device.

[0006] In recent years, flexible display devices using a substrate made of a flexible material such as plastic have been spotlighted as next - generation display devices. Currently, such flexible display devices have a wide range of applications, including not only monitors of computers, televisions, and personal portable devices but also navigation systems for vehicles or instrument panels for vehicles.

[0007] In addition, a recent trend in display devices is to reduce the bezel size.

[0008] As the bezel size of a display device decreases, due to component variations and process deviations, an area where a sealing member is not coated may be formed or the coating of the sealing member may have a thickness smaller than the lower limit thickness, and thus, side - surface sealing defects of the display device may be generated. Summary of the Invention

[0009] Accordingly, the present disclosure relates to a display device and a method of manufacturing the same that substantially eliminate one or more problems caused by limitations and disadvantages of the related art

[0010] An object of the present disclosure is to provide a display device and a method of manufacturing the same, in which a fusible metal is provided in a trimming area and then cut using a laser, and thus, while the heat is melted by the laser cutting, the side surface of the display device is sealed.

[0011] The object of the present disclosure is not limited to the above object, and other objects not yet described in the present disclosure will be more clearly understood by those skilled in the art from the following detailed description.

[0012] To achieve these objects and other advantages, and in accordance with the purpose of the present disclosure, as embodied and broadly described herein, a display device includes: a backplane; a display panel bonded to the backplane; a cover glass bonded to the display panel; and a sealing member configured to seal a side surface of the display panel and formed of a fusible metal.

[0013] The fusible metal of the sealing member may include one of lead, copper, aluminum, and silver.

[0014] The display device may further include a polarizing plate disposed between the display panel and the cover glass. The backplane and the display panel may be bonded to each other by an adhesive. The cover glass and the polarizing plate may be bonded to each other by a transparent adhesive.

[0015] In another aspect of the present disclosure, a display device includes: a backplane; a display panel bonded to the backplane; a cover glass bonded to the display panel; and a sealing member configured to seal side surfaces of the backplane and the display panel and formed of a fusible metal.

[0016] In another aspect of the present disclosure, a method of manufacturing a display device includes: preparing a display panel including at least two OLED display panel regions and a trimming region disposed between the at least two OLED display panel regions and formed with a fusible metal pattern; bonding the display panel to a backplane; bonding a transparent adhesive to an upper surface of the display panel; and irradiating a central portion of the fusible metal pattern formed in the trimming region with a laser, thereby cutting the resulting structure into unit display panel regions, and at the same time, melting the fusible metal pattern by heat of the laser to form a sealing member configured to seal a side surface of the display panel.

[0017] The method may further include bonding a cover glass to the transparent adhesive cut into unit display panel regions.

[0018] Each of the OLED display panel regions in the OLED display panel regions may include a thin film transistor and a light shielding layer disposed under the thin film transistor. The light shielding layer and the fusible metal pattern may be formed of the same material on the same layer.

[0019] In another aspect of the present disclosure, a method of manufacturing a display device includes: preparing a display panel including at least two OLED display panel regions and a trimming region provided between the at least two OLED display panel regions; bonding the display panel to a backplane; bonding a transparent adhesive to an upper surface of the display panel; forming a fusible metal pattern at a rear surface of the backplane in the trimming region; and irradiating a central portion of the fusible metal pattern with a laser to cut the resulting structure into unit display panel regions, and at the same time, thermally melting the fusible metal pattern by the laser to form a sealing member configured to seal side surfaces of the backplane, the display panel, and the transparent adhesive.

[0020] In the display device and the method of manufacturing the same having the above features according to the present disclosure, the following effects exist.

[0021] First, in the flexible OLED display device according to each embodiment of the present disclosure, since the fusible metal pattern is melted when cutting is performed based on a unit OLED display device, and thus side surfaces of the OLED display panel or side surfaces of the backplane, the adhesive, the OLED display panel, the polarizing plate, and the transparent adhesive are sealed by the molten metal of the fusible metal pattern, moisture can be prevented from being introduced into the OLED display panel.

[0022] Second, since side surfaces of the OLED display panel or side surfaces of the display device are sealed by the molten metal when cutting is performed based on a unit OLED display device, process simplification can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The drawings are included to provide a further understanding of the present disclosure and are incorporated into and constitute a part of this application. The drawings illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the present disclosure. In the drawings:

[0024] Figure 1 is a block diagram briefly showing a configuration of a display device according to an embodiment of the present disclosure;

[0025] Figure 2 is a circuit diagram of a sub-pixel included in a flexible display device according to an embodiment of the present disclosure;

[0026] Figure 3 is a cross-sectional view schematically showing a configuration at one end of a flexible OLED display device according to a first embodiment of the present disclosure;

[0027] Figure 4 is a cross-sectional view of a mother substrate of a display panel 100 illustrating a method of manufacturing a flexible OLED display device according to a first embodiment of the present disclosure;

[0028] Figures 5A to 5C is a process cross-sectional view illustrating a method of manufacturing a flexible OLED display device according to a first embodiment of the present disclosure;

[0029] Figure 6 is a cross-sectional view schematically showing a configuration at one end of a flexible OLED display device according to a second embodiment of the present disclosure; and

[0030] Figures 7A to 7C is a process cross-sectional view illustrating a method of manufacturing a flexible OLED display device according to a second embodiment of the present disclosure. Detailed Description of the Embodiments

[0031] According to the embodiments described in detail below with reference to the accompanying drawings, the advantages and features of the present disclosure and the methods for achieving these advantages and features will become clear. However, the present disclosure may be implemented in many different forms and should not be construed as limited to the embodiments set forth herein. Here, the embodiments of the present disclosure are provided so that the present disclosure may be sufficiently thorough and complete to assist those skilled in the art in fully understanding the scope of the present disclosure. The present disclosure may be defined by the scope of the claims.

[0032] In the drawings for illustrating exemplary embodiments of the present disclosure, for example, the shapes, sizes, ratios, angles, and numbers shown are given by way of example and are therefore not limited to this specification. Throughout the specification, the same reference numerals denote the same components. Additionally, in the following description of the present disclosure, when a detailed description of known functions and configurations incorporated herein may make the subject matter of the present disclosure rather unclear, the detailed description will be omitted.

[0033] Unless used together with the term "only", the terms "comprising", "including", and / or "having" used in this specification do not exclude the presence or addition of other elements. Unless the context clearly indicates otherwise, the singular forms are also intended to include the plural forms.

[0034] When interpreting the components included in the various embodiments of the present disclosure, the components are interpreted as including an error range even if no explicit description thereof is made.

[0035] In the description of the various embodiments of the present disclosure, when describing a positional relationship, for example, when using "on", "above", "below", "next to", etc. to describe the positional relationship between two components, unless the term "directly" or "closely" is used, one or more other components may be located between the two components.

[0036] It is understood that although ordinal numbers such as "first" and "second" may be used herein to distinguish constituent elements from each other, the functions or structures of these elements are not limited by the ordinal numbers or names of the elements. Since the claims are mainly described in combination with basic constituent elements, the ordinal numbers attached to the names of each constituent element in the claims may be different from the ordinal numbers used in the description of the embodiments.

[0037] The corresponding features of the various embodiments of the present disclosure may be coupled and combined with each other in part or in whole, and various technical connections and their operation modes are possible. These various embodiments may be executed independently of each other or may be executed in association with each other.

[0038] Hereinafter, a display device according to an embodiment of the present disclosure will be described in detail with reference to the accompanying drawings.

[0039] Figure 1 is a block diagram briefly showing the configuration of a display device according to an embodiment of the present disclosure.

[0040] Referring to Figure 1 , a display device according to an embodiment of the present disclosure includes: a display panel 100 in which a plurality of pixels PXL are arranged in a matrix; a data driving circuit 120 configured to drive data lines 140; a gate driving circuit 130 configured to drive gate lines 150; and a timing controller 110 configured to control the driving timings of the data driving circuit 120 and the gate driving circuit 130.

[0041] In the display panel 100, a plurality of data lines 140 and a plurality of gate lines 150 cross each other, and pixels PXL are provided in corresponding crossing regions in a matrix form. The pixels PXL provided on the same horizontal line constitute a pixel row. The pixels PXL provided on one pixel row are connected to one gate line 150, and one gate line 150 may include at least one scan line and at least one emission line. That is, each pixel PXL may be connected to one data line 140, at least one scan line, and at least one emission line. The pixels PXL may commonly receive a high-level driving voltage ELVDD, a low-level driving voltage ELVSS, and an initialization voltage Vinit from a generator (not shown). In order to prevent a light-emitting element such as an organic light-emitting diode (OLED) from emitting light unnecessarily during an initialization period and a sampling period, the initialization voltage Vinit is preferably selected within a voltage range sufficiently lower than the operating voltage of the OLED and may be set to be equal to or lower than the low-level driving voltage ELVSS.

[0042] The thin film transistors (TFTs) constituting each pixel PXL can each be implemented by oxide TFTs including an oxide semiconductor layer. The advantage of the oxide TFTs is that the display panel 100 can have a large area, fully considering electron mobility, process deviation, etc. However, the present disclosure is not limited to the above conditions, and the semiconductor layer of each TFT can be formed of amorphous silicon, polysilicon, etc.

[0043] Each pixel PXL can include: a driving TFT configured to supply current to a light-emitting element (i.e., an OLED); a switching TFT configured to supply a data voltage to the driving TFT; and a storage capacitor configured to hold the data voltage supplied to the driving TFT for one frame. Each pixel PXL can also include a plurality of TFTs and storage capacitors to compensate for variations in the threshold voltage of the driving TFT.

[0044] The timing controller 110 rearranges the digital video data RGB input from the outside thereto corresponding to the resolution of the display panel 100, and then supplies the rearranged digital video data RGB to the data driving circuit 120. In addition, the timing controller 110 generates a data control signal DDC for controlling the operation timing of the data driving circuit 120 and a gate control signal GDC for controlling the operation timing of the gate driving circuit 130 based on timing signals such as a vertical synchronization signal Vsync, a horizontal synchronization signal Hsync, a dot clock signal DCLK, a data enable signal DE, etc.

[0045] The data driving circuit 120 converts the digital video data RGB input from the timing controller 110 thereto into an analog data voltage based on the data control signal DDC, and supplies the analog data voltage to each data line 140.

[0046] The data driving circuit 120 can include at least one source driver IC (SIC). The source driver IC (SIC) converts the digital video data of the input image into an analog gamma compensation voltage under the control of the timing controller 110, thereby generating a data voltage, and outputs the data voltage to the data line 140. The source driver IC (SIC) can be mounted on a bendable flexible circuit board such as a chip on film (COF), or can be directly bonded to the substrate in the non-active source region of the display panel 100 through a chip on glass (COG) process.

[0047] The COF as described above is bonded to the pad region of the display panel 100 and the source PCB through an anisotropic conductive film (ACF). The input pins of the COF are electrically connected to the output terminals (pads) of the source PCB. The output pins of the COF are electrically connected to the data pads formed at the substrate of the display panel 100 through AFC.

[0048] The gate driving circuit 130 may generate a scan signal and an emission signal based on a gate control signal GDC. The gate driving circuit 130 may include a scan driver and an emission driver. The scan driver may generate a scan signal and may supply the scan signal to the gate lines 150 in a row-sequential manner to drive at least one scan line connected to each pixel row. The emission driver may generate an emission signal and may supply the emission signal to the emission lines in a row-sequential manner to drive at least one emission line connected to each pixel row.

[0049] The gate driving circuit 130 as described above may be directly formed on the non-active electrode region of the display panel 100 in the form of a gate driver in panel (GIP).

[0050] Figure 2 is a circuit diagram of a sub-pixel included in a flexible display device according to an embodiment of the present disclosure.

[0051] Referring to Figure 2 , a sub-pixel of a flexible display device according to an embodiment of the present disclosure may include a switching transistor ST, a driving transistor DT, a compensation circuit CC, a light-emitting element OLED, and a storage capacitor Cst.

[0052] The light-emitting element OLED may operate according to a driving current generated by the driving transistor DT to emit light.

[0053] Corresponding to the scan signal supplied through the gate line SCAN, the switching transistor ST may perform a switching operation to store a data signal supplied through the data line DATA as a data voltage in the storage capacitor Cst.

[0054] Corresponding to the data voltage stored in the storage capacitor Cst, the driving transistor DT may operate to cause a constant driving current between the high-level voltage line VDD and the low-level voltage line GND.

[0055] The compensation circuit CC is a circuit for compensating the threshold voltage of the driving transistor DT, etc. The compensation circuit CC may include at least one thin film transistor and a capacitor. The configuration of the compensation circuit CC may vary widely depending on the compensation method applied thereto.

[0056] For example, although Figure 2 the sub-pixel shown is configured to have a 2T (transistor) 1C (capacitor) structure including a switching transistor ST, a driving transistor DT, a storage capacitor Cst, and a light-emitting element OLED, when the compensation circuit CC is added to the sub-pixel, the sub-pixel may be configured to have various structures such as 3T1C, 4T2C, 5T2C, 6T1C, 7T1C, 7T2C, etc.

[0057] Figure 3 FIG. 1 is a cross-sectional view schematically showing a configuration at one end of a flexible OLED display device according to a first embodiment of the present disclosure.

[0058] As Figure 3 shown, the flexible OLED display device according to the first embodiment of the present disclosure may be configured by including a backplane 200, an OLED display panel 100, a polarizing plate 60, and a cover glass 80.

[0059] The backplane 200 and the OLED display panel 100 may be joined to each other by an adhesive 50 that may be a pressure-sensitive adhesive (PSA). The polarizing plate 60 may be disposed on the OLED display panel 100. The polarizing plate 60 and the cover glass 80 may be joined to each other by a transparent adhesive 70 that may be an optically clear adhesive (OCA).

[0060] In addition, side surfaces of the OLED display panel 100 may be sealed by a sealing member 25 formed of a fusible metal.

[0061] Here, as the fusible metal for the sealing member 25, a metal material having a low melting point, such as lead (Pb), copper (Cu), aluminum (Al), silver (Ag), etc., may be used.

[0062] The backplane 200 may be in the form of a film including one of the groups consisting of: polyester-based polymers, silicon-based polymers, acrylic-based polymers, polyolefin-based polymers, and copolymers thereof.

[0063] Hereinafter, a method of manufacturing the flexible OLED display device according to the first embodiment configured as described above will be described.

[0064] Figure 4 FIG. 2 is a cross-sectional view of a mother substrate of a display panel 100 illustrating a method of manufacturing a flexible OLED display device according to the first embodiment of the present disclosure.

[0065] Figure 4 FIG. 2 shows that at least two OLED display panel regions and a trimming region between the at least two OLED display panel regions are provided on the mother substrate.

[0066] Figure 4 FIG. 2 shows that a driving transistor DT and a light-emitting element OLED of sub-pixels described with reference to Figure 2 are provided in each OLED display panel region.

[0067] A substrate 111 is for supporting and protecting the constituent elements of the flexible display device 100 provided thereon. As the substrate 111, a flexible substrate made of a soft material having flexible characteristics, such as plastic, may be used. Hereinafter, the flexible substrate will be indicated by reference numeral "111".

[0068] The flexible substrate 111 may be in the form of a film that is one of the groups including the following compositions: polyester-based polymers, silicon-based polymers, acrylic-based polymers, polyolefin-based polymers, and copolymers thereof.

[0069] A buffer layer 112 may also be provided above the flexible substrate 111. The buffer layer 112 can prevent the penetration of environmental moisture or other impurities through the flexible substrate 111 and can planarize the surface of the flexible substrate 111.

[0070] The thin film transistor 120 may be provided above the flexible substrate 111 and may include a gate electrode 121, a source electrode 122, a drain electrode 123, and a semiconductor layer 124.

[0071] In this case, the semiconductor layer 124 may be made of amorphous silicon or polycrystalline silicon, but is not limited thereto. Polycrystalline silicon has excellent mobility compared to amorphous silicon and can therefore have excellent reliability while exhibiting low power consumption. In this regard, polycrystalline silicon is suitable for driving thin transistors in pixels.

[0072] The semiconductor layer 124 may be made of an oxide semiconductor. The oxide semiconductor has excellent characteristics in terms of mobility and uniformity. The oxide semiconductor may be composed of: indium-tin-gallium-zinc oxide (InSnGaZnO)-based materials as quaternary metal oxides; indium-gallium-zinc oxide (InGaZnO)-based materials, indium-tin-zinc oxide (InSnZnO)-based materials, tin-gallium-zinc oxide (SnGaZnO)-based materials, aluminum-gallium-zinc oxide (AlGaZnO)-based materials, indium-aluminum-zinc oxide (InAlZnO)-based materials, or tin-aluminum-zinc oxide (SnAlZnO)-based materials as ternary metal oxides; indium-zinc oxide (InZnO)-based materials, tin-zinc oxide (SnZnO)-based materials, aluminum-zinc oxide (AlZnO)-based materials, zinc-magnesium oxide (ZnMgO)-based materials, tin-magnesium oxide (SnMgO)-based materials, indium-magnesium oxide (InMgO)-based materials, or indium-gallium oxide (InGaO)-based materials as binary metal oxides; indium oxide (InO)-based materials, tin oxide (SnO)-based materials, zinc oxide (ZnO)-based materials, etc., but not limited to the composition ratios of their elements.

[0073] The semiconductor layer 124 may include a source region, a drain region, and a channel region between the source region and the drain region, all of which regions include p-type impurities or n-type impurities. The semiconductor layer 124 may also include a low-concentration doping region between the source region and the drain region adjacent to the channel region.

[0074] The source region and the drain region are regions doped with impurities at a high concentration. The source electrode 122 and the drain electrode 123 of the thin film transistor 120 can be connected to the source region and the drain region, respectively.

[0075] As the impurity ions, p-type impurities or n-type impurities can be used. The p-type impurity can be one of boron (B), aluminum (Al), gallium (Ga), and indium (In). The n-type impurity can be one of phosphorus (P), arsenic (As), antimony (Sb), etc.

[0076] The semiconductor layer 124 can be doped with n-type impurities or p-type impurities in its channel region according to the NMOS or PMOS thin film transistor structure. For the thin film transistors included in the flexible display device 100 according to an embodiment of the present disclosure, the NMOS or PMOS thin film transistors are applicable.

[0077] The gate insulating layer 114 is an insulating layer composed of a single layer or multiple layers of silicon oxide (SiO X ) or silicon nitride (SiN X ). The gate insulating layer 114 can be provided to prevent the current flowing through the semiconductor layer 124 from flowing to the gate electrode 121. Although silicon oxide has lower flexibility than that of a metal, silicon oxide has excellent flexibility compared to silicon nitride, and thus, it can be formed in a single layer or multiple layers according to its characteristics.

[0078] The gate electrode 121 is used to perform a switching operation for turning on or off the thin film transistor 120 based on an electrical signal transmitted to it from the outside through the gate line. The gate electrode 121 can be composed of a single layer or multiple layers of a conductive metal such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), or an alloy thereof, but is not limited thereto.

[0079] The source electrode 122 and the drain electrode 123 are connected to the data line and can be used to transmit an electrical signal transmitted to them from the outside to the light emitting element 160. The source electrode 122 and the drain electrode 123 can be composed of a single layer or multiple layers of a conductive metal such as copper (Cu), aluminum (Al), molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), or an alloy thereof, but is not limited thereto.

[0080] An interlayer insulating layer 115 composed of a single layer or multiple layers of silicon oxide (SiO x ) or silicon nitride (SiN x ) can be provided between the gate electrode 121, the source electrode 122, and the drain electrode 123 to insulate the gate electrode 121, the source electrode 122, and the drain electrode 123 from each other.

[0081] Above the thin film transistor 120, a passivation layer composed of an inorganic insulating layer of silicon oxide (SiO x ) or silicon nitride (SiN x ) may also be provided.

[0082] The passivation layer can be used to prevent unnecessary electrical connection between the component elements disposed above and below the passivation layer, and to prevent contamination, damage, etc. of the component elements from the outside. Depending on the configuration and characteristics of the thin film transistor 120 and the light emitting element 160, the passivation layer may be omitted.

[0083] The thin film transistor 120 can be classified into an inverted staggered structure or a coplanar structure according to the positions of the component elements constituting the thin film transistor 120. For example, in the case of a thin film transistor having an inverted staggered structure, its gate electrode can be disposed on the side opposite to its source electrode and drain electrode. In the case of the thin film transistor 120 having a coplanar structure, with reference to the semiconductor layer 124, the gate electrode 121 can be disposed on the same side as the source electrode 122 and the drain electrode 123, as Figure 4 shown.

[0084] Although Figure 4 the thin film transistor 120 having a coplanar structure is shown, the flexible display device 100 according to an embodiment of the present disclosure may include a thin film transistor having an inverted staggered structure.

[0085] Although among the various thin film transistors that may be included in the flexible display device 100, for ease of description, only the driving thin film transistor is shown. A switching thin film transistor, a capacitor, etc. may be included in the flexible display device 100.

[0086] In addition, the switching thin film transistor transmits the signal from the data line to the gate electrode of the driving thin film transistor when receiving a signal from the gate line. The driving thin film transistor can transmit the current transmitted through the power line to the anode 131 according to the signal received from the switching thin film transistor, and can control the light emission by the current transmitted to the anode 131.

[0087] Above the thin film transistor 120, a planarization layer 116 may be provided to protect the thin film transistor 120, reduce the steps formed due to the thin film transistor 120, and reduce the parasitic capacitance generated between the thin film transistor 120, the gate line, the data line, and the light emitting element 160.

[0088] The planarization layer 116 can be formed of at least one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polystyrene resin, polyphenylene sulfide resin, and benzocyclobutene, but is not limited thereto.

[0089] The flexible display device 100 according to an embodiment of the present disclosure may include a first planarization layer and a second planarization layer sequentially stacked.

[0090] The light-emitting element 160 disposed above the planarization layer 116 may include an anode 131, an emission part 132, and a cathode 133.

[0091] The anode 131 may be disposed above the planarization layer 116.

[0092] The anode 131, which is an electrode for supplying holes to the emission part 132, may be electrically connected to the drain electrode 123 of the thin-film transistor 120 through a contact hole formed in the planarization layer 116.

[0093] The anode 131 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), or the like as a transparent conductive material, but is not limited thereto.

[0094] When the flexible display device 100 has a top emission structure in which light is emitted upward toward the side where the cathode 133 is disposed, the flexible display device 100 may further include a reflective layer to more effectively release the emitted light upward toward the side where the cathode 133 is disposed.

[0095] The anode 131 may have a bilayer structure in which a transparent conductive layer formed of a transparent conductive material and a reflective layer are sequentially stacked, or a triple-layer structure in which a transparent conductive layer, a transparent layer, and a transparent conductive layer are sequentially stacked. The reflective layer may be formed of silver (Ag) or an alloy including silver.

[0096] A bank 117 may be disposed above the anode 131 and the planarization layer 116. The bank 117 may separate an actually light-emitting area, thereby defining sub-pixels.

[0097] The emission part 132 may be disposed between the anode 131 and the cathode 133.

[0098] The emission part 132 for emitting light may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), an emission layer, an electron transport layer (ETL), and an electron injection layer (EIL), and a part of the above-described constituent elements may be omitted according to the structure or characteristics of the flexible display device 100. Here, as the emission layer, an electroluminescent layer and an inorganic emission layer are also applicable.

[0099] The hole injection layer may be disposed above the anode 131 to achieve effective hole injection.

[0100] The hole transport layer may be disposed above the hole injection layer to achieve effective hole transport.

[0101] The emission layer may be disposed above the hole transport layer and may include a material capable of emitting light of a specific color, and thus may emit light of a specific color. Additionally, as the emission material, a phosphorescent material or a fluorescent material may be used.

[0102] The electron injection layer may also be disposed above the electron transport layer. The electron injection layer is an organic layer for achieving effective injection of electrons from the cathode 133. Depending on the structure and characteristics of the flexible display device 100, the electron injection layer may be omitted.

[0103] Meanwhile, an electron blocking layer or a hole blocking layer for blocking the flow of electrons or holes may also be disposed at a position adjacent to the emission layer. The electron blocking layer or the hole blocking layer prevents the phenomenon that electrons move through the adjacent hole transport layer from the emission layer after being injected into the emission layer, or holes move through the adjacent electron transport layer from the emission layer after being injected into the emission layer, thereby achieving an improvement in luminous efficiency.

[0104] The cathode 133 is disposed above the emission part 132 to supply electrons to the emission part 132. Since the cathode 133 should supply electrons, the cathode 133 may be made of a metal material such as magnesium (Mg), silver-magnesium (Ag:Mg), etc., which are conductive materials with a low work function, but is not limited thereto.

[0105] When the flexible display device 100 is a top emission type, the cathode 133 may be made of a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), or tin oxide (TO).

[0106] Above the light-emitting element 160, a package 118 may be disposed to prevent the thin-film transistor 120 and the light-emitting element 160, which are components of the flexible display device 100, from being oxidized or damaged by moisture, oxygen, or impurities introduced from the outside. The package 118 may be formed by stacking a plurality of package layers, a foreign matter compensation layer, and a plurality of barrier films.

[0107] Above the entire upper surface of the thin-film transistor 120 and the entire upper surface of the light-emitting element 160, a package layer may be disposed. The package layer may be made of one of silicon nitride (SiN x ) or aluminum oxide (Al y O z ) as an inorganic material, but is not limited thereto. A foreign matter compensation layer is disposed on the package layer, and another package layer is also disposed on the foreign matter compensation layer.

[0108] The foreign matter compensation layer disposed on the package layer may be made of silicon oxycarbide (SiOC z)Or it is composed of a resin of the acrylic or epoxy series, but is not limited thereto. When a defect is generated due to a crack formed by a foreign object or particle that may be generated during the process, the foreign object compensation layer covers the foreign object and the bend formed by the foreign object, thereby compensating for the defect.

[0109] A barrier film may be provided above the encapsulation layer and the foreign object compensation layer to delay the penetration of oxygen and moisture from the outside into the flexible display device 100. The barrier film may be configured to take the form of a film exhibiting transparency and double-sided adhesiveness, and may be composed of an insulating material of the olefin, acrylic, or silicon series. Additionally, a barrier film composed of one of cycloolefin polymer (COP), cycloolefin copolymer (COC), and polycarbonate (PC) may be stacked, but is not limited thereto.

[0110] Although not shown, a touch electrode may be provided above the package 118.

[0111] A light shielding layer 141 may be formed between the buffer layer 112 and the substrate 111 to cover the semiconductor layer 124 of the thin film transistor 120. The light shielding layer 141 may be used to prevent the semiconductor layer 124 of the thin film transistor 120 from being irradiated with light.

[0112] The light shielding layer 141 may be formed of a metal.

[0113] Meanwhile, a fusible metal pattern 142 is formed in a trimming area between at least two OLED display panel areas. As the material of the fusible metal pattern 142, a metal material having a low melting point such as lead (Pb), copper (Cu), aluminum (Al), silver (Ag), etc. may be used.

[0114] The light shielding layer 141 and the fusible metal pattern 142 may be formed of the same metal material on the same layer.

[0115] Different from the material layers in each OLED display panel area, the fusible metal pattern 142 may be formed separately.

[0116] Hereinafter, a method of manufacturing a display device using a mother substrate of the OLED display panel 100 will be described, in which at least two OLED display panel areas and a trimming area between at least two OLED display panel areas are provided at the mother substrate, and a fusible metal pattern 142 is formed in the trimming area, as referred to Figure 4 as described.

[0117] Figures 5A to 5C is a process cross-sectional view illustrating a method of manufacturing a flexible OLED display device according to a first embodiment of the present disclosure.

[0118] As Figure 5A shown, as referred to Figure 4The configured OLED display panel 100 and the polarizing plate 60 are disposed on the backplane 200.

[0119] Thereafter, the backplane 200 and the OLED display panel 100 are joined to each other by an adhesive (PSA) 50.

[0120] In addition, a transparent adhesive (OCA) 70 is joined to the upper surface of the polarizing plate 60. Although not shown, both surfaces of the transparent adhesive (OCA) 70 are respectively protected by protective films. Therefore, in the case where the protective film on one surface of the transparent adhesive (OCA) 70 has been removed, the transparent adhesive (OCA) 70 is joined to the upper surface of the polarizing plate 60.

[0121] As referred to Figure 4 above, a laser is irradiated onto the central portion of the fusible metal pattern 142 formed in the trimming area between at least two OLED display panel areas, thereby Figure 5A dividing (cutting) the resulting structure into unit OLED display panel areas. The laser is irradiated on the back surface side of the backplane 200.

[0122] As Figure 5B shown, the backplane 200, the adhesive (PSA) 50, the OLED display panel 100, the polarizing plate 60, and the transparent adhesive (OCA) 70 are cut into unit OLED display panel areas by a laser.

[0123] Meanwhile, the fusible metal pattern 142 is thermally melted by the laser, thereby sealing the side surface of the OLED display panel 100.

[0124] That is, when the fusible metal pattern 142 is thermally melted by the laser, the fusible metal pattern 142 can become a sealing member 25 to seal the side surface of the OLED display panel 100, as referred to Figure 3 above.

[0125] Thereafter, the protective film remaining on the surface of the transparent adhesive (OCA) 70 in the state where the structure has been cut into unit OLED display panel areas is removed, and then the cover glass 80 is joined to the surface of the transparent adhesive (OCA) 70, as Figure 5C shown.

[0126] Figure 6 is a cross-sectional view schematically showing the configuration at one end of a flexible OLED display device according to a second embodiment of the present disclosure.

[0127] As Figure 6 shown, a flexible OLED display device according to a second embodiment of the present disclosure can be configured by including a backplane 200, an OLED display panel 100, a polarizing plate 60, and a cover glass 80.

[0128] The backplane 200 and the OLED display panel 100 are joined to each other by an adhesive (PSA) 50. A polarizing plate 60 is disposed on the OLED display panel 100, and the polarizing plate 60 and the glass cover 80 are joined to each other by a transparent adhesive (OCA) 70.

[0129] In addition, the side surfaces of the backplane 200, the adhesive (PSA) 50, the OLED display panel 100, the polarizing plate 60, and the transparent adhesive (OCA) 70 may be sealed by a sealing member 45 formed of a fusible metal.

[0130] In this case, as the fusible metal of the sealing member 45, a metal material having a low melting point, such as lead (Pb), copper (Cu), aluminum (Al), silver (Ag), etc., may be used.

[0131] Hereinafter, a method of manufacturing a flexible OLED display device according to a second embodiment of the present disclosure having the above structure will be described.

[0132] Figures 7A to 7C is a process cross-sectional view illustrating a method of manufacturing a flexible OLED display device according to a second embodiment of the present disclosure.

[0133] Hereinafter, a method of manufacturing a display device using a mother substrate of the OLED display panel 100 will be described, in which at least two OLED display panel regions and a trimming region between the at least two OLED display panel regions are provided at the mother substrate.

[0134] As Figure 7A shown, the OLED display panel 100 and the polarizing plate 60 are disposed on the backplane 200.

[0135] Thereafter, the backplane 200 and the OLED display panel 100 are joined to each other by an adhesive (PSA) 50.

[0136] The transparent adhesive (OCA) 70 is joined to the upper surface of the polarizing plate 60. Although not shown, both surfaces of the transparent adhesive (OCA) 70 are respectively protected by protective films. Therefore, in the case where the protective film on one surface of the transparent adhesive (OCA) 70 has been removed, the transparent adhesive (OCA) 70 is joined to the upper surface of the polarizing plate 60.

[0137] In addition, a fusible metal pattern 142 is formed at the rear surface of the backplane 200 in the trimming region.

[0138] Laser is irradiated onto the central portion of the fusible metal pattern 142 formed in the trimming region between at least two OLED display panel regions, thereby Figure 7AThe obtained structure is divided (cut) into unit OLED display panel regions. The laser is irradiated on the rear surface side of the backplane 200.

[0139] Therefore, as Figure 7B shown, the backplane 200, the adhesive (PSA) 50, the OLED display panel 100, the polarizing plate 60, and the transparent adhesive (OCA) 70 are cut into unit OLED display panel regions by the laser.

[0140] Meanwhile, the fusible metal pattern 142 is thermally melted by the laser, thereby sealing the side surfaces of the backplane 200, the adhesive (PSA) 50, the OLED display panel 100, the polarizing plate 60, and the transparent adhesive (OCA) 70.

[0141] That is to say, when the fusible metal pattern 142 is thermally melted by the laser, the side surfaces of the backplane 200, the adhesive (PSA) 50, the OLED display panel 100, the polarizing plate 60, and the transparent adhesive (OCA) 70 can be sealed by the sealing member 25 formed by the molten metal of the fusible metal pattern 142.

[0142] Thereafter, the protective film remaining on the surface of the transparent adhesive (OCA) 70 in the state where the structure has been cut into unit OLED display panel regions is removed, and then the cover glass 80 is bonded to the surface of the transparent adhesive (OCA) 70, as Figure 7C shown.

[0143] As is apparent from the above description, in the flexible OLED display device according to the first embodiment of the present disclosure, since the fusible metal pattern 142 is melted when cutting is performed based on the unit OLED display device, and thus the side surface of the OLED display panel 100 is sealed by the molten metal of the fusible metal pattern 142, moisture can be prevented from being introduced into the OLED display panel 100.

[0144] In addition, in the flexible OLED display device according to the second embodiment of the present disclosure, since the fusible metal pattern 142 is melted when cutting is performed based on the unit OLED display device, and thus the side surfaces of the backplane 200, the adhesive (PSA) 50, the OLED display panel 100, the polarizing plate 60, and the transparent adhesive (OCA) 70 are sealed by the molten metal of the fusible metal pattern 142, moisture can be prevented from being introduced into the OLED display device.

[0145] In addition, in the flexible OLED display device according to the first embodiment or the second embodiment of the present disclosure, since the side surface of the OLED display panel 100 or the side surface of the display device is sealed by the molten metal when cutting is performed based on the unit OLED display device, process simplification can be achieved.

[0146] Those skilled in the art to which the present disclosure pertains will understand that various modifications and applications described in the foregoing description are possible without changing the basic characteristics of the embodiments. Therefore, the scope of the present disclosure should also be interpreted by the appended claims rather than the above detailed description.

Claims

1. A display device, comprising: Back panel; a display panel bonded to the backplane; a cover glass bonded to the display panel; as well as A sealing member is configured to seal a side surface of the display panel and is formed of a fusible metal.

2. The display device according to claim 1, wherein: The fusible metal of the sealing member includes one of lead, copper, aluminum and silver.

3. The display device according to claim 1, further comprising: A polarizing plate disposed between the display panel and the cover glass, wherein the back plate and the display panel are bonded to each other by an adhesive, and The cover glass and the polarizing plate are bonded to each other by a transparent adhesive.

4. A display device, comprising: Back panel; a display panel bonded to the backplane; a cover glass bonded to the display panel; as well as A sealing member is configured to seal the back plate and the side surface of the display panel and is formed of a fusible metal.

5. The display device according to claim 4, wherein: The fusible metal of the sealing member includes one of lead, copper, aluminum and silver.

6. The display device according to claim 4, further comprising: A polarizing plate disposed between the display panel and the cover glass, wherein the back plate and the display panel are bonded to each other by an adhesive, and The cover glass and the polarizing plate are bonded to each other by a transparent adhesive.

7. The display device according to claim 6, wherein: The sealing member further seals side surfaces of the polarizing plate, the adhesive, and the transparent adhesive.

8. A method for manufacturing a display device, comprising: Prepare a display panel, the display panel comprising at least two organic light emitting display (OLED) display panel areas and a trimming area disposed between the at least two OLED display panel areas and formed with a fusible metal pattern; Bonding the display panel to a backplane; bonding a transparent adhesive to the upper surface of the display panel; as well as A central portion of the fusible metal pattern formed in the trimming area is irradiated with a laser, thereby cutting the resulting structure including the display panel, the backplane and the transparent adhesive into unit OLED display panel areas, and at the same time, the fusible metal pattern is melted by the heat of the laser to form a sealing member configured to seal the side surface of the display panel.

9. The method according to claim 8, wherein: The fusible metal pattern includes one of lead, copper, aluminum and silver.

10. The method according to claim 8, wherein: A polarizing plate is further disposed between the upper surface of the display panel and the transparent adhesive.

11. The method according to claim 8, wherein: Laser light is irradiated on the rear surface side of the back plate.

12. The method according to claim 11, further comprising: A cover glass is bonded to the transparent adhesive cut into the unit OLED display panel areas.

13. The method according to claim 8, wherein: Each of the at least two OLED display panel areas includes a thin film transistor and a light shielding layer disposed below the thin film transistor; and The light shielding layer and the fusible metal pattern are formed on the same layer using the same material.

14. A method for manufacturing a display device, comprising: Prepare a display panel, the display panel comprising at least two organic light emitting display (OLED) display panel areas and a trimming area disposed between the at least two OLED display panel areas; Bonding the display panel to a backplane; bonding a transparent adhesive to the upper surface of the display panel; A fusible metal pattern is formed in the trimming region at the rear surface of the back plate; as well as The central portion of the fusible metal pattern is irradiated with a laser, thereby cutting the resulting structure including the display panel, the backplane and the transparent adhesive into unit OLED display panel areas, and at the same time, the fusible metal pattern is melted by the heat of the laser to form a sealing member configured to seal the side surfaces of the backplane, the display panel and the transparent adhesive.

15. The method according to claim 14, wherein: The fusible metal pattern includes one of lead, copper, aluminum and silver.

16. The method according to claim 14, further comprising: A cover glass is bonded to the transparent adhesive cut into the OLED unit display panel areas.

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