Laser processing apparatus, method for controlling laser processing apparatus, and method for manufacturing electronic device

Abstract

A laser processing device according to one aspect of the present disclosure is provided with: a diffractive optical element that divides a first laser beam into a plurality of second laser beams and emits the second laser beams; a condensing optical system that generates a lattice-like multipoint pattern in which a plurality of condensing points are arranged in a row direction and a column direction by condensing the plurality of second laser beams; a first actuator that moves the workpiece; the light shielding plates can shield at least one row and at least one column of the multi-point pattern from light; a second actuator that changes the relative position of the light-shielding plate with respect to the multi-dot pattern in order to select any one of first to fourth multi-dot patterns generated by shielding a part of the multi-dot pattern by the light-shielding plate; and a laser processing processor that moves the workpiece by controlling the first actuator, and selects any one of the first to fourth multi-dot patterns for each step position by controlling the second actuator.

Description

Technical Field

[0001] The present disclosure relates to a laser processing apparatus, a control method of the laser processing apparatus, and a method of manufacturing an electronic device. Background Art

[0002] In recent years, in semiconductor exposure apparatuses, with the miniaturization and high integration of semiconductor integrated circuits, improvement in resolution has been required. Therefore, shortening of the wavelength of light emitted from an exposure light source has been promoted. For example, as a gas laser apparatus for exposure, a KrF excimer laser apparatus that emits laser light with an output wavelength of about 248.4 nm and an ArF excimer laser apparatus that emits laser light with an output wavelength of about 193.4 nm are used.

[0003] In addition, since the pulse width of excimer laser is about several tens of ns and the wavelengths are as short as 248.4 nm and 193.4 nm respectively, it is sometimes used for direct processing of polymer materials, glass materials, etc.

[0004] Chemical bonds in polymer materials can be broken by excimer laser having photon energy higher than the bond energy. Therefore, it is known that non-heating processing of polymer materials can be performed using excimer laser, and the processed shape is beautiful.

[0005] In addition, it is known that glass, ceramics, etc. have a high absorption rate for excimer laser. Therefore, even materials that are difficult to process with visible and infrared lasers can be processed using excimer laser.

[0006] The spectral line width of the spontaneous oscillation light of a KrF excimer laser apparatus and an ArF excimer laser apparatus is as wide as 350 pm to 400 pm. Therefore, if a projection lens is made of a material that transmits ultraviolet rays such as KrF and ArF lasers, chromatic aberration may occur. As a result, the resolution may be reduced. Therefore, it is necessary to narrow the spectral line width of the laser output from the gas laser apparatus to such an extent that chromatic aberration can be ignored. Therefore, in the laser resonator of the gas laser apparatus, in order to narrow the spectral line width, a line narrowing module (LNM: Line Narrowing Module) including a line narrowing element (etalon, grating, etc.) is sometimes provided. Hereinafter, a gas laser apparatus whose spectral line width has been narrowed will be referred to as a narrowband gas laser apparatus.

[0007] Prior Art Documents

[0008] Patent Documents

[0009] Patent Document 1: U.S. Patent Application Publication No. 2006 / 0289412

[0010] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2007-268600 Summary of the Invention

[0011] A laser processing apparatus according to one aspect of the present disclosure includes: a diffractive optical element that divides a first laser into a plurality of second lasers and emits them; a condensing optical system that generates a lattice-shaped multi-spot pattern in which a plurality of condensing points are arranged in a row direction and a column direction by condensing the plurality of second lasers; a first actuator that moves a workpiece; a light shielding plate that can shield at least one row and at least one column of the multi-spot pattern; a second actuator that changes the relative position of the light shielding plate with respect to the multi-spot pattern in order to select any one of a first multi-spot pattern, a second multi-spot pattern, a third multi-spot pattern, and a fourth multi-spot pattern. The first multi-spot pattern is generated by passing the multi-spot pattern without being shielded by the light shielding plate, the second multi-spot pattern is generated by shielding at least one row of the multi-spot pattern with the light shielding plate, the third multi-spot pattern is generated by shielding at least one row and at least one column of the multi-spot pattern with the light shielding plate, and the fourth multi-spot pattern is generated by shielding at least one column of the multi-spot pattern with the light shielding plate; and a laser processing processor that performs the following processing: by controlling the first actuator, moving the workpiece so as to irradiate any one of the first multi-spot pattern to the fourth multi-spot pattern to each of a plurality of step positions set in a processing region that requires hole processing on the surface of the workpiece; and by controlling the second actuator, selecting any one of the first multi-spot pattern to the fourth multi-spot pattern for each step position.

[0012] A control method for a laser processing apparatus according to one aspect of the present disclosure includes: a diffractive optical element that divides a first laser into a plurality of second lasers and emits them; a condensing optical system that generates a lattice-shaped multi-spot pattern in which a plurality of condensing points are arranged in a row direction and a column direction by condensing the plurality of second lasers; a first actuator that moves a workpiece; a light shielding plate that can shield at least one row and at least one column of the multi-spot pattern; and a second actuator that changes the relative position of the light shielding plate with respect to the multi-spot pattern in order to select any one of a first multi-spot pattern, a second multi-spot pattern, a third multi-spot pattern, and a fourth multi-spot pattern. The first multi-spot pattern is generated by passing the multi-spot pattern without being shielded by the light shielding plate, the second multi-spot pattern is generated by shielding at least one row of the multi-spot pattern with the light shielding plate, the third multi-spot pattern is generated by shielding at least one row and at least one column of the multi-spot pattern with the light shielding plate, and the fourth multi-spot pattern is generated by shielding at least one column of the multi-spot pattern with the light shielding plate. The control method for the laser processing apparatus includes the following processing: by controlling the first actuator, moving the workpiece so as to irradiate any one of the first multi-spot pattern to the fourth multi-spot pattern to each of a plurality of step positions set in a processing region that requires hole processing on the surface of the workpiece; and by controlling the second actuator, selecting any one of the first multi-spot pattern to the fourth multi-spot pattern for each step position.

[0013] A method for manufacturing an electronic device according to one aspect of the present disclosure includes the following steps: forming a plurality of through-holes on a glass substrate as a workpiece using a laser processing device; bonding an intermediate layer to an integrated circuit chip to electrically connect them to each other, the intermediate layer having a glass substrate and conductors respectively provided in the plurality of through-holes; and bonding the intermediate layer to a circuit substrate to electrically connect them to each other. The laser processing device includes: a diffractive optical element that divides a first laser into a plurality of second lasers and emits them; a condensing optical system that generates a lattice-shaped multi-spot pattern in which a plurality of condensing points are arranged in a row direction and a column direction by condensing the plurality of second lasers; a first actuator that moves the workpiece; a shutter that can block at least one row and at least one column of the multi-spot pattern; a second actuator that changes the relative position of the shutter with respect to the multi-spot pattern in order to select any one of a first multi-spot pattern, a second multi-spot pattern, a third multi-spot pattern, and a fourth multi-spot pattern. The first multi-spot pattern is generated by passing the multi-spot pattern without being blocked by the shutter, the second multi-spot pattern is generated by blocking at least one row of the multi-spot pattern with the shutter, the third multi-spot pattern is generated by blocking at least one row and at least one column of the multi-spot pattern with the shutter, and the fourth multi-spot pattern is generated by blocking at least one column of the multi-spot pattern with the shutter; a laser processing processor that controls the first actuator to move the workpiece so as to irradiate any one of the first multi-spot pattern to the fourth multi-spot pattern to each of a plurality of step positions set in a processing area on the surface of the workpiece that requires hole processing, and controls the second actuator to select any one of the first multi-spot pattern to the fourth multi-spot pattern for each step position. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Hereinafter, as an example only, several embodiments of the present disclosure will be described with reference to the drawings.

[0015] Figure 1 is a diagram schematically showing the structure of a laser processing system of a comparative example.

[0016] Figure 2 is a diagram schematically showing the structure of a laser device.

[0017] Figure 3 is a diagram schematically showing the operation flow of a laser processing system of a comparative example.

[0018] Figure 4 is a diagram showing the details of the read-in process of processing conditions.

[0019] Figure 5 is a diagram showing the details of the adjustment process of energy density.

[0020] Figure 6 is a diagram showing the details of the hole processing process.

[0021] Figure 7 It is a figure showing an example of a multi-point pattern.

[0022] Figure 8 It is a figure showing an example of a processing area that requires hole machining.

[0023] Figure 9 It is a figure showing an example of a plurality of stepping positions.

[0024] Figure 10 It is a figure showing an example of the surface of the workpiece after hole machining.

[0025] Figure 11 It is a figure schematically showing the structure of the laser processing system according to the first embodiment.

[0026] Figure 12 It is a figure showing an example of the first position of the light-shielding plate.

[0027] Figure 13 It is a figure showing an example of the second position of the light-shielding plate.

[0028] Figure 14 It is a figure showing an example of the third position of the light-shielding plate.

[0029] Figure 15 It is a figure showing an example of the fourth position of the light-shielding plate.

[0030] Figure 16 It is a figure showing an example of a plurality of stepping positions.

[0031] Figure 17 It is a figure schematically showing the operation flow of the laser processing system according to the first embodiment.

[0032] Figure 18 It is a figure showing the details of the generation and storage processing of position data.

[0033] Figure 19 It is a figure showing the details of the determination processing of the first region to the fourth region and the movement path.

[0034] Figure 20 It is a figure showing the details of the hole machining process.

[0035] Figure 21 It is a figure showing an example of the first position of the light-shielding plate of the modification of the first embodiment.

[0036] Figure 22 It is a figure showing an example of the second position of the light-shielding plate of the modification of the first embodiment.

[0037] Figure 23This is a diagram showing an example of the third position of the light-shielding plate in a modified example of the first embodiment.

[0038] Figure 24 This is a diagram showing an example of the fourth position of the light-shielding plate in a modified example of the first embodiment.

[0039] Figure 25 This is a diagram showing an example of multiple step positions set by a laser processing processor in a modified example of the first embodiment.

[0040] Figure 26 This is a diagram showing the details of the generation and storage process of position data in a modified example of the first embodiment.

[0041] Figure 27 This is a diagram showing the details of the determination process of the first region to the fourth region and the movement path in a modified example of the first embodiment.

[0042] Figure 28 This is a diagram schematically showing the structure of a laser processing system according to the second embodiment.

[0043] Figure 29 This is a diagram showing the first position of the light-shielding plate according to the second embodiment.

[0044] Figure 30 This is a diagram showing the second position of the light-shielding plate according to the second embodiment.

[0045] Figure 31 This is a diagram showing the third position of the light-shielding plate according to the second embodiment.

[0046] Figure 32 This is a diagram showing the fourth position of the light-shielding plate according to the second embodiment.

[0047] Figure 33 This is a diagram schematically showing the structure of a laser processing system according to the third embodiment.

[0048] Figure 34 This is a diagram showing the first position of a multi-point pattern.

[0049] Figure 35 This is a diagram showing the second position of a multi-point pattern.

[0050] Figure 36 This is a diagram showing the third position of a multi-point pattern.

[0051] Figure 37 This is a diagram showing the fourth position of a multi-point pattern.

[0052] Figure 38 This is a diagram schematically showing the structure of an electronic device.

[0053] Figure 39It is a diagram showing a method for manufacturing an electronic device. Detailed Description of the Invention

[0054] <Content>

[0055] 1. Explanation of Terms

[0056] 1.1 Diffractive Optical Element

[0057] 2. Comparative Example

[0058] 2.1 Structure

[0059] 2.2 Operation

[0060] 2.3 Problem

[0061] 3. First Embodiment

[0062] 3.1 Structure

[0063] 3.2 Operation

[0064] 3.3 Effect

[0065] 4. Variation of the First Embodiment

[0066] 4.1 Structure

[0067] 4.2 Operation

[0068] 4.3 Effect

[0069] 5. Second Embodiment

[0070] 5.1 Structure

[0071] 5.2 Operation

[0072] 5.3 Effect

[0073] 6. Third Embodiment

[0074] 6.1 Structure

[0075] 6.2 Operation

[0076] 6.3 Effect

[0077] 7. Method for Manufacturing an Electronic Device

[0078] 8. Structural Example of a Laser Processing Processor

[0079] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The embodiments described below represent several examples of the present disclosure and do not limit the content of the present disclosure. In addition, the structures and operations described in each embodiment are not necessarily all essential as the structures and operations of the present disclosure. In addition, the same reference numerals are assigned to the same components, and repeated descriptions are omitted.

[0080] 1. Explanation of Terms

[0081] 1.1 Diffractive Optical Element

[0082] A diffractive optical element (DOE: Diffractive Optical Element) is an optical element that utilizes the diffraction phenomenon of light. For example, a DOE is fabricated by processing a fine structure designed through simulation on a substrate using microfabrication technology. A DOE can transform a laser beam into various patterns. In the present disclosure, a laser beam is transformed into a multi-point pattern by a DOE.

[0083] 2. Comparative Example

[0084] 2.1 Structure

[0085] Figure 1 The structure of the laser processing system 1 of the comparative example is schematically shown. In addition, the comparative example is a form known only to the applicant as recognized by the applicant and is not a publicly known example recognized by the applicant himself.

[0086] The laser processing system 1 includes a laser device 2 and a laser processing device 4 as main structures. The laser processing system 1 is used for hole processing such as forming through holes on a glass substrate for an intermediate layer.

[0087] The laser device 2 is a laser device that outputs ultraviolet pulsed laser. For example, the laser device 2 is a discharge-excited laser device that outputs ultraviolet pulsed laser using F 2 , ArF, KrF, XeCl, XeF, etc. as laser media. In the present disclosure, the laser device 2 is set as a KrF excimer laser device that outputs ultraviolet pulsed laser with a center wavelength of 248.4 nm. Hereinafter, the ultraviolet pulsed laser output by the laser device 2 will be simply referred to as laser Lb.

[0088] The laser device 2 and the laser processing device 4 are connected by an optical path tube 5. The optical path tube 5 is arranged on the optical path of the laser Lb between the light exit of the laser device 2 and the light entrance of the laser processing device 4.

[0089] The laser processing device 4 includes a laser processing processor 40, an optical device 41, a frame 42, an XYZ stage 43, and a workbench 44. The optical device 41 and the XYZ stage 43 are fixed to the frame 42.

[0090] The workbench 44 supports the workpiece 45. The workpiece 45 is the object to be machined for hole machining. The workpiece 45 is a glass substrate for an intermediate layer, for example, an alkali-free glass substrate. In addition, the workpiece 45 may also be a substrate formed of quartz glass, an organic material, single crystal silicon, ceramics, or the like. A plurality of holes H are formed in the workpiece 45 by so-called porous machining.

[0091] The XYZ stage 43 supports the workbench 44. The workpiece 45 is fixed on the workbench 44. The XYZ stage 43 can move the workbench 44 in the X direction, Y direction, and Z direction, and changes the position of the workpiece 45 by moving the workbench 44. The X direction, Y direction, and Z direction are orthogonal to each other. The X direction and Y direction are parallel to the surface 45a of the workpiece 45. The Z direction is orthogonal to the surface 45a. In addition, the XYZ stage 43 is an example of the "first actuator" of the technology of the present disclosure.

[0092] The optical device 41 includes a housing 41a, high reflectors 47a, 47b, 47c, an attenuator 49, a DOE 50, and a condensing optical system 51. Each component in the optical device 41 is fixed to a bracket (not shown) and is arranged at a specified position in the housing 41a.

[0093] The high reflector 47a is arranged to reflect the laser Lb that has passed through the optical path tube 5, and the reflected laser Lb enters the high reflector 47b through the attenuator 49. For example, the optical path tube 5 and the housing 41a are purged with a purge gas. The purge gas is nitrogen, an inert gas, or the like, which is a gas that hardly absorbs the laser Lb.

[0094] The attenuator 49 is arranged on the optical path between the high reflector 47a and the high reflector 47b in the housing 41a. The attenuator 49 includes, for example, two partial reflectors 49a, 49b and rotary stages 49c, 49d of these partial reflectors. The partial reflectors 49a, 49b are optical elements whose transmittance varies according to the incident angle of the laser Lb. The incident angle of the laser Lb on the partial reflectors 49a, 49b is adjusted by the rotary stages 49c, 49d.

[0095] The high reflectors 47b, 47c are arranged to reflect the laser Lb that has passed through the attenuator 49, and the reflected laser Lb enters the DOE 50.

[0096] The DOE 50 is disposed on the optical path of the laser Lb reflected by the high reflector 47c. The DOE 50 diffracts the laser Lb incident from the high reflector 47c and splits it into a plurality of lasers Lv for emission. By splitting the laser Lb in the X direction and the Y direction, the DOE 50 transforms it into a lattice-shaped multi-point pattern. In addition, the laser Lb corresponds to the "first laser" of the technology of the present disclosure. The laser Lv corresponds to the "second laser" of the technology of the present disclosure.

[0097] The condensing optical system 51 is configured such that a plurality of lasers Lv emitted from the DOE 50 are incident on the condensing optical system 51 and its focal plane is located on the surface 45a of the workpiece 45. The condensing optical system 51 is, for example, an Fθ lens, which condenses a plurality of lasers Lv incident from the DOE 50 to generate a multi-point pattern in which a plurality of condensed spots are arranged in a lattice shape.

[0098] The laser processing processor 40 sends the target pulse energy Et and the emission trigger Tr to the laser device 2. The target pulse energy Et is the target value of the pulse energy of the laser Lb. The emission trigger Tr is a trigger signal for causing the laser device 2 to output a pulse amount of the laser Lb.

[0099] The laser processing processor 40 controls the laser device 2 and the XYZ stage 43 so as to irradiate a processing area that needs hole processing on the surface 45a of the workpiece 45 with a multi-point pattern in a step-and-repeat manner at each step position.

[0100] Figure 2 The structure of the laser device 2 is schematically shown. The laser device 2 includes an oscillator 20, a monitoring module 30, a diaphragm 35, and a laser processor 38. The oscillator 20 includes a chamber 21, an optical resonator composed of a rear mirror 25a and an output coupler (OC) 25b, a charger 23, and a power supply unit (PPM: Pulsed Power Module) 22.

[0101] Windows 21a and 21b are provided in the chamber 21. A laser gas serving as a laser medium is enclosed in the chamber 21.

[0102] In addition, an opening is formed in the chamber 21, and an insulating plate 26 embedded with a plurality of feedthroughs 26a is provided so as to block the opening. The PPM 22 is disposed on the insulating plate 26. A pair of discharge electrodes 27a and 27b serving as main electrodes and a ground plate 28 are disposed in the chamber 21. The shapes of the discharge surfaces of the discharge electrodes 27a and 27b are rectangular.

[0103] In order to excite the laser medium by discharge, the discharge electrodes 27a and 27b are arranged such that their discharge faces face each other. The face of the discharge electrode 27a on the side opposite to the discharge face is supported by the electrical insulating plate 26. The discharge electrode 27a is connected to the feedthrough portion 26a. The face of the discharge electrode 27b on the side opposite to the discharge face is supported by the ground plate 28.

[0104] PPM22 includes a switch 22a, a charging capacitor (not shown), a pulse transformer, a magnetic compression circuit, and a peak capacitor. The peak capacitor is connected to the feedthrough portion 26a via a connection portion (not shown). The charger 23 charges the charging capacitor based on control from the laser processor 38.

[0105] The switch 22a is controlled to be turned on / off by the laser processor 38. The laser processor 38 turns on the switch 22a according to the light emission trigger Tr sent from the laser processing processor 40.

[0106] When the switch 22a is turned on, current flows from the charging capacitor to the primary side of the pulse transformer, and due to electromagnetic induction, a reverse current flows to the secondary side of the pulse transformer. The magnetic compression circuit is connected to the secondary side of the pulse transformer and compresses the pulse width of the current pulse. The peak capacitor is charged by this current pulse. When the voltage of the peak capacitor reaches the breakdown voltage of the laser gas, dielectric breakdown occurs in the laser gas between the discharge electrodes 27a and 27b, generating a discharge. A pulse amount of laser Lb is generated by this discharge.

[0107] The rear mirror 25a is formed by coating a highly reflective film on a planar substrate. The output coupling mirror 25b is formed by coating a partially reflective film on a planar substrate. The chamber 21 is arranged between the rear mirror 25a and the output coupling mirror 25b. The laser generated in the chamber 21 is amplified by the optical resonator and output from the output coupling mirror 25b.

[0108] The monitoring module 30 includes a beam splitter 31 and an optical sensor 32. The beam splitter 31 is arranged on the optical path of the laser Lb output from the output coupling mirror 25b and reflects a part of the laser Lb. The optical sensor 32 is arranged at the position where the laser Lb reflected by the beam splitter 31 is incident. The optical sensor 32 measures the pulse energy of the laser Lb and sends the measured value to the laser processor 38.

[0109] The laser processor 38 changes the charging voltage of the charger 23 based on the measured value of the pulse energy measured by the optical sensor 32, thereby controlling so that the pulse energy of the laser Lb output from the laser device 2 becomes the target pulse energy Et.

[0110] The aperture 35 is disposed on the optical path of the laser Lb of the transmission beam splitter 31. The aperture 35 opens and closes according to an instruction from the laser processor 38. The laser processor 38 controls the output of the laser Lb from the laser device 2 by controlling the aperture 35.

[0111] 2.2 Operation

[0112] Next, the operation of the laser processing system 1 of the comparative example will be described. Figure 3 The operation flow of the laser processing system 1 of the comparative example is schematically shown. Before performing hole processing, the workpiece 45 is set on the worktable 44 of the XYZ stage 43. First, the laser processing processor 40 reads in the processing conditions (step S10). Next, the laser processing processor 40 adjusts the energy density on the surface 45a of the workpiece 45 (step S20). Then, the laser processing processor 40 controls the laser device 2 and the XYZ stage 43 to perform hole processing (step S30).

[0113] Figure 4 The details of the read-in process of the processing conditions (step S10) are shown. The processing conditions read in by the laser processing processor 40 in step S10 include, for example, the target energy density Fm, the number Q of holes to be processed simultaneously, the area S of the focal point, the number Nm of irradiation pulses, and the repetition frequency fm. The processing conditions can be read in via an external device (not shown), a network, or from an input device operated by the operator.

[0114] The target energy density Fm is the pulse energy density per pulse of one focal point on the surface 45a of the workpiece 45, and is a value larger than the processing threshold of the workpiece 45. When the workpiece 45 is a non-alkali glass substrate, the target energy density Fm is several tens of J / cm 2 .

[0115] The number Q of holes to be processed simultaneously is the number of holes H to be processed simultaneously, and corresponds to the number of the plurality of lasers Lv generated by the DOE 50, that is, the number of focal points included in the above-mentioned multi-point pattern. The area S of the focal point is, for example, when the distribution diameter of the light intensity at 1 / e 2 times or more of the peak intensity is D, the value calculated by the relational expression S = π(D / 2) 2 .

[0116] The number Nm of irradiation pulses is the number of pulses of the laser Lb required to form a through hole penetrating the workpiece 45 or a non-through hole having a target depth as the hole H. The repetition frequency fm is the repetition frequency of the laser Lb output by the laser device 2, and is, for example, a rated value. The repetition frequency fm is, for example, 4 kHz.

[0117] Figure 5Shows the details of the energy density adjustment process (step S20). In step S20, first, the laser processing processor 40 sends the data of the target pulse energy Et required for hole processing to the laser device 2 (step S200). After receiving the data, the laser device 2 controls the oscillator 20 and sends a preparation completion signal to the laser processing processor 40 when it can output the laser Lb with the target pulse energy Et.

[0118] Next, the laser processing processor 40 determines whether it has received the preparation completion signal from the laser device 2 (step S201). When the laser processing processor 40 determines that it has received the preparation completion signal (step S201: Yes), it calculates the transmittance Ta of the attenuator 49 for making the energy density on the surface 45a of the workpiece 45 the target energy density Fm (step S202). For example, the laser processing processor 40 uses the following formula (1) to calculate the transmittance Ta. Here, T 0 is the transmittance of the optical device 41 when the transmittance of the attenuator 49 is 100%.

[0119] Ta = Fm × Q × S / (Et × T 0 ) ··· (1)

[0120] Next, the laser processing processor 40 adjusts the attenuator 49 so that the transmittance becomes Ta (step S203). Specifically, the laser processing processor 40 controls the incident angles of the partial reflectors 49a and 49b by using the rotary stages 49c and 49d to make the transmittance of the attenuator 49 become Ta.

[0121] In addition, the laser processing processor 40 may adjust the target pulse energy Et instead of or in addition to the transmittance of the attenuator 49, thereby making the energy density on the surface 45a of the workpiece 45 the target energy density Fm.

[0122] Figure 6 Shows the details of the hole processing process (step S30). In step S30, first, the laser processing processor 40 sets the data representing the initial step position on the surface 45a of the workpiece 45 (step S300). Next, the laser processing processor 40 controls the XYZ stage 43 based on the set data, thereby positioning the workpiece 45 in the XY direction (step S301). In addition, the laser processing processor 40 controls the XYZ stage 43 in the Z direction so that the focal plane of the condenser optical system 51 coincides with the surface 45a of the workpiece 45 (step S302).

[0123] Next, the laser processing processor 40 sends a light emission trigger Tr to the laser device 2 based on the repetition frequency fm and the number of irradiation pulses Nm (step S303). As a result, the laser Lb is output from the laser device 2 synchronously with the light emission trigger Tr and enters the laser processing device 4 through the optical path tube 5. The laser Lb is reflected by the high reflector 47a, attenuated by the attenuator 49, and then reflected by the high reflectors 47b and 47c. The laser Lb reflected by the high reflector 47c enters the DOE 50. The DOE 50 divides the incident laser Lb into a plurality of lasers Lv and emits them. The condensing optical system 51 condenses the plurality of lasers Lv to form a multi-point pattern on the surface 45a of the workpiece 45. Thereby, holes H are formed by laser ablation at positions corresponding to the respective condensing points included in the multi-point pattern.

[0124] Next, the laser processing processor 40 determines whether the current step position is the final step position (step S304). When the laser processing processor 40 determines that it is not the final step position (step S304: No), it sets data indicating the next step position adjacent to the current step position (step S305) and returns the process to step S301.

[0125] The laser processing processor 40 repeatedly executes steps S301 to S303 until it reaches the final step position. When the laser processing processor 40 determines that it is the final step position (step S304: Yes), it ends the process.

[0126] 2.3 Problems

[0127] Next, use Figures 7 - 10 Describe the problems of the laser processing device 4 of the comparative example. In the present disclosure, the arrangement of points in the X direction is referred to as "column", and the arrangement of points in the Y direction is defined as "row". In addition, the number of rows arranged in the X direction is referred to as "the number of rows", and the number of columns arranged in the Y direction is referred to as "the number of columns". Here, the point is the hole H or the condensing point P. In addition, hereinafter, the X direction may sometimes be referred to as the "column direction", and the Y direction may sometimes be referred to as the "row direction".

[0128] Figure 7 Show an example of the multi-point pattern MP generated by the DOE 50 and the condensing optical system 51. The multi-point pattern MP is a pattern having a rectangular outer shape in which a plurality of condensing points P are arranged in a lattice shape in the row direction and the column direction. Let the number of rows of the condensing points P included in the multi-point pattern MP be j, and let the number of columns be k. In this comparative example, j = 7 and k = 7. Here, the interval Dx in the X direction and the interval Dy in the Y direction of the multi-point pattern MP may be the same or different.

[0129] Figure 8An example of a processing area 46 that requires hole processing on the surface 45a of the workpiece 45 is shown. The processing area 46 is a rectangular area in which holes H are arranged in a grid pattern. Let the number of rows of the holes H to be formed in the processing area 46 be r, and the number of columns be s. In this comparative example, r = 33 and s = 40.

[0130] Figure 9 An example of a plurality of step positions set by the laser processing processor 40 on the surface 45a of the workpiece 45 is shown. S(m, n) represents the step position where the multi-point pattern MP is irradiated. m represents the position in the X direction, and n represents the position in the Y direction. The laser processing processor 40 sets the number of step positions S(m, n) to perform hole processing on the entire inside of the processing area 46. In this comparative example, it is set that 1 ≤ m ≤ 5 and 1 ≤ n ≤ 6.

[0131] During hole processing, the laser processing processor 40 controls the XYZ stage 43 to move the workpiece 45 so as to irradiate the multi-point pattern MP to each step position S(m, n) in sequence. Figure 9 The arrows shown represent the movement path of the step position S(m, n) where the multi-point pattern MP is irradiated. In this comparative example, S(1, 1) is the initial step position, and S(5, 6) is the final step position.

[0132] Figure 10 An example of the surface 45a of the workpiece 45 after hole processing is shown. When the number of rows r and the number of columns s of the processing area 46 cannot be divided evenly by the number of rows j and the number of columns k of the multi-point pattern MP, respectively, unnecessary holes H are formed outside the processing area 46. Hereinafter, the area where a plurality of unnecessary holes H are formed is referred to as a remaining area 47. As described above, when j = 7, k = 7, r = 33, and s = 40, a remaining area 47 with a remaining row number of 2 and a remaining column number of 2 is generated.

[0133] Since the splitting number of the laser Lb is determined, it is considered to replace the DOE 50 with another DOE 50 having an appropriate splitting number so that the remaining area 47 is not generated. However, when the DOE 50 is replaced, the replacement and calibration of the DOE 50 take time. In addition, if the splitting number of the DOE 50 changes, the energy density of each focal point changes, so readjustment of the energy density is required. Thus, when replacing the DOE 50, the replacement, calibration, and readjustment of the energy density each take time, and the productivity decreases.

[0134] Therefore, in the present disclosure, there is provided a laser processing apparatus, a control method of the laser processing apparatus, and a manufacturing method of an electronic device that can maintain high productivity even when the number of rows r and the number of columns s of the processing area 46 cannot be divided evenly by the number of rows j and the number of columns k of the multi-point pattern MP, respectively.

[0135] 3. First Embodiment

[0136] The laser processing system 1a of the first embodiment of the present disclosure will be described. In addition, the same reference numerals are given to the structures having the same structures as those described above, and redundant descriptions are omitted unless otherwise specified.

[0137] 3.1 Structure

[0138] Figure 11 The structure of the laser processing system 1a of the first embodiment is schematically shown. The structure of the laser processing system 1a is different from that of the laser processing system 1 of the comparative example only in the structure of the laser processing device 4a. In addition to the structure of the laser processing device 4 of the comparative example, the laser processing device 4a further includes a light shielding plate 60 and an XY stage 61.

[0139] The light shielding plate 60 is disposed near the surface 45a of the workpiece 45. The light shielding plate 60 is held by a bracket 62 that can move in the X direction and the Y direction on the XY stage 61. The XY stage 61 is fixed to the housing 41a via a bracket 63.

[0140] The XY stage 61 is a two-axis moving stage that moves the light shielding plate 60 in a direction perpendicular to the optical axis of the condenser optical system 51. Specifically, the XY stage 61 moves the light shielding plate 60 in the X direction and the Y direction via the bracket 62. The XY stage 61 is controlled by the laser processing system 1a. The laser processing system 1a changes the relative position of the light shielding plate 60 with respect to the multi-point pattern MP by controlling the XY stage 61. The XY stage 61 is an example of the "second actuator" of the technology of the present disclosure.

[0141] In order to be able to shield a part of the multi-point pattern MP, the light shielding plate 60 is formed of a material that is difficult to be drilled by the condensing point P. The light shielding plate 60 is formed of a metal such as W, Ta, or Mo having a high melting point, SiC or ZrO having a higher processing threshold than glass, 2 , ceramics such as BN, silicon, diamond, etc.

[0142] Figures 12 - 15 The planar structure of the light shielding plate 60 is shown. The light shielding plate 60 is, for example, an L-shaped shape including sides parallel to the X direction and the Y direction, and is configured to be able to shield at least one row and at least one column of the condensing points P included in the multi-point pattern MP. In the present embodiment, the light shielding plate 60 is set at the first position to the fourth position by the laser processing processor 40.

[0143] Figure 12An example of the first position of the light-shielding plate 60 is shown. When the light-shielding plate 60 is set at the first position, the multi-point pattern MP passes through without being blocked by the light-shielding plate 60. The multi-point pattern MP that passes through without being blocked by the light-shielding plate 60 is referred to as the first multi-point pattern MP1.

[0144] Figure 13 An example of the second position of the light-shielding plate 60 is shown. The second position is the position where the light-shielding plate 60 has moved a predetermined amount in the X direction from the first position. When the light-shielding plate 60 is set at the second position, at least one row of the multi-point pattern MP is blocked by the light-shielding plate 60. In Figure 13 the example shown, the condensing points P of two rows starting from the end of the multi-point pattern MP are blocked. The multi-point pattern MP in which at least one row is blocked by the light-shielding plate 60 is referred to as the second multi-point pattern MP2.

[0145] Figure 14 An example of the third position of the light-shielding plate 60 is shown. The third position is the position where the light-shielding plate 60 has moved a predetermined amount in the X direction and the Y direction from the first position. When the light-shielding plate 60 is set at the third position, at least one row and at least one column of the multi-point pattern MP are blocked by the light-shielding plate 60. In Figure 14 the example shown, the condensing points P of two rows and two columns starting from the end of the multi-point pattern MP are blocked. The multi-point pattern MP in which at least one row and at least one column are blocked by the light-shielding plate 60 is referred to as the third multi-point pattern MP3.

[0146] Figure 15 An example of the fourth position of the light-shielding plate 60 is shown. The fourth position is the position where the light-shielding plate 60 has moved a predetermined amount in the Y direction from the first position. When the light-shielding plate 60 is set at the fourth position, at least one column of the multi-point pattern MP is blocked by the light-shielding plate 60. In Figure 15 the example shown, the condensing points P of two columns starting from the end of the multi-point pattern MP are blocked. The multi-point pattern MP in which at least one column is blocked by the light-shielding plate 60 is referred to as the fourth multi-point pattern MP4.

[0147] In order to select any one of the first multi-point pattern MP1 to the fourth multi-point pattern MP4, the XY stage 61 changes the relative position of the light-shielding plate 60 with respect to the multi-point pattern MP.

[0148] In the present embodiment, the laser processing processor 40 determines the number of rows and columns blocked by the light-shielding plate 60 at the second position to the fourth position based on the relationship between the number of rows r and the number of columns s of the processing region 46 and the number of rows j and the number of columns k of the multi-point pattern MP.

[0149] Figure 16An example of a plurality of stepped positions set by the laser processing processor 40 is shown. In the present embodiment, the laser processing processor 40 controls the XY stage 61 to select and set the position of the light shielding plate 60 from the first position to the fourth position for each stepped position S(m, n). That is, the laser processing processor 40 controls the XY stage 61 to select any one of the first multi-point pattern MP1 to the fourth multi-point pattern MP4 for each stepped position S(m, n).

[0150] The processing area 46 is divided into a first area A1, a second area A2, a third area A3, and a fourth area A4. In the present embodiment, the first area A1 includes stepped positions S(m, n) where 1 ≤ m ≤ 4 and 1 ≤ n ≤ 5. The second area A2 includes stepped positions S(m, n) where m = 5 and 1 ≤ n ≤ 5. The third area A3 includes the stepped position S(m, n) where m = 5 and n = 6. The fourth area A4 includes stepped positions S(m, n) where 1 ≤ m ≤ 4 and n = 6. The first area A1 to the fourth area A4 are each a single block area that is not separated into a plurality.

[0151] The first position is selected among the stepped positions S(m, n) within the first area A1. The second position is selected among the stepped positions S(m, n) within the second area A2. The third position is selected among the stepped positions S(m, n) within the third area A3. The fourth position is selected among the stepped positions S(m, n) within the fourth area A4.

[0152] The laser processing processor 40 controls the XYZ stage 43 to move the workpiece 45 so as to irradiate any one of the first to fourth multi-point patterns MP1 to MP4 on the plurality of stepped positions S(m, n) set within the processing area 46. In addition, the laser processing processor 40 determines the movement path of the workpiece 45 and performs step-and-repeat control so that the stepped positions S(m, n) of the first area A1 to the fourth area A4 are sequentially irradiated. Preferably, the movement path is a continuous path in such a way that the irradiated stepped position changes to an adjacent stepped position.

[0153] 3.2 Operation

[0154] Next, the operation of the laser processing system 1a of the first embodiment will be described. Figure 17 A flowchart of the operation of the laser processing system 1a of the first embodiment is schematically shown. In the present embodiment, steps S40 and S50 are added between step S10 and step S20.

[0155] After the laser processing processor 40 reads in the processing conditions in step S10, it generates and stores the position data of the light shielding plate 60 (step S40). Next, the laser processing processor 40 determines the first region A1 to the fourth region A4 and the movement path (step S50). Then, it adjusts the energy density (step S20) and performs hole processing (step S30).

[0156] Figure 18 The details of the generation and storage process of the position data (step S40) are shown. In step S40, first, the laser processing processor 40 reads in the information of the multi-point pattern MP (step S400). Specifically, the laser processing processor 40 reads in the number of rows j and the number of columns k of the light-concentrating points P included in the multi-point pattern MP generated by the DOE 50 and the light-concentrating optical system 51. The information of the multi-point pattern MP can also be read in via an external device (not shown), a network, or from an input device operated by an operator.

[0157] In addition, the laser processing processor 40 reads in the information of the processing region 46 that requires hole processing, that is, the hole processing information (step S401). Specifically, the laser processing processor 40 reads in the number of rows r and the number of columns s of the holes H to be formed in the processing region 46. The hole processing information can also be read in via an external device (not shown), a network, or from an input device operated by an operator.

[0158] Next, the laser processing processor 40 calculates the remaining number of rows e and the remaining number of columns f of the light-concentrating points P (step S402). Specifically, the laser processing processor 40 uses the function MOD(r, j) to determine whether MOD(r, j) = 0. Here, the function MOD(r, j) outputs the remainder when the number of rows r is divided by the number of rows j. When MOD(r, j) = 0, e = 0. When MOD(r, j) ≠ 0, the remaining number of rows e is calculated by the following formula (2).

[0159] e = j - MOD(r, j) ··· (2)

[0160] In addition, the laser processing processor 40 uses the function MOD(s, k) to determine whether MOD(s, k) = 0. Here, the function MOD(s, k) outputs the remainder when the number of columns s is divided by the number of columns k. When MOD(s, k) = 0, f = 0. When MOD(s, k) ≠ 0, the remaining number of columns f is calculated by the following formula (3).

[0161] f = k - MOD(s, k) ··· (3)

[0162] As Figure 7 and Figure 8 shown in the example, when j = 7, k = 7, r = 33, and s = 40, e = 2 and f = 2.

[0163] Next, the laser processing processor 40 stores first position data D(1) representing the first position of the light shielding plate 60 in a memory (not shown) (step S403). In addition, as Figure 12 shown, since the first position is a position independent of the remaining number of rows e and the remaining number of columns f, the first position data D(1) can also be pre-stored in the memory.

[0164] Next, the laser processing processor 40 generates second position data D(2) representing the second position of the light shielding plate 60 and stores it in the memory (step S404). Specifically, as Figure 13 shown, the laser processing processor 40 determines the second position of the light shielding plate 60 that shields the remaining number of rows e of the multi-point pattern MP, generates second position data D(2) representing the second position, and stores it. In addition, when e = 0, since it is not necessary to shield the rows of the multi-point pattern MP, the generation and storage of the second position data D(2) are not required.

[0165] Next, the laser processing processor 40 generates third position data D(3) representing the third position of the light shielding plate 60 and stores it in the memory (step S405). Specifically, as Figure 14 shown, the laser processing processor 40 determines the third position of the light shielding plate 60 that shields the remaining number of rows e and the remaining number of columns f of the multi-point pattern MP, generates third position data D(3) representing the third position, and stores it. In addition, when e = 0 and f = 0, since it is not necessary to shield both the rows and columns of the multi-point pattern MP, the generation and storage of the third position data D(3) are not required.

[0166] Next, the laser processing processor 40 generates fourth position data D(4) representing the fourth position of the light shielding plate 60 and stores it in the memory (step S406). Specifically, as Figure 15 shown, the laser processing processor 40 determines the fourth position of the light shielding plate 60 that shields the remaining number of columns f of the multi-point pattern MP, generates fourth position data D(4) representing the fourth position, and stores it. In addition, when f = 0, since it is not necessary to shield the columns of the multi-point pattern MP, the generation and storage of the fourth position data D(4) are not required.

[0167] Figure 19 Details of the determination process (step S50) of the first region A1 to the fourth region A4 and the movement path are shown. In step S50, first, as Figure 16 shown, the laser processing processor 40 determines the first region A1 to the fourth region A4 so that the first multi-point pattern MP1 to the fourth multi-point pattern MP4 are accommodated in the processing region 46 (step S500).

[0168] Next, the laser processing processor 40 determines the movement path of the workpiece 45 such that each step position of the first region A1 to the fourth region A4 becomes the irradiation target in sequence (step S501). For example, the laser processing processor 40 determines the movement path such that the step position of the irradiation target is changed in the order of the first region A1, the second region A2, the third region A3, and the fourth region A4.

[0169] In addition, when e = 0, only the first region A1 and the fourth region A4 are set. When f = 0, only the first region A1 and the second region A2 are set. Further, when e = 0 and f = 0, only the first region A1 is set.

[0170] Figure 20 The details of the hole processing (step S30) are shown. In addition, the case where neither the remaining number of rows e nor the remaining number of columns f is 0 is described. In step S30 of the present embodiment, first, the laser processing processor 40 sets the counter n to 0 (step S310). Next, the laser processing processor 40 increments the counter n by 1 (step S311) and reads the n-th position data D(n) from the memory (step S312). The laser processing processor 40 positions the light shielding plate 60 at the n-th position based on the read n-th position data D(n) (step S313).

[0171] Next, the laser processing processor 40 sets the data indicating the initial step position within the n-th region An (step S314). For example, the initial step position within the first region A1 is S(1,1). The initial step position within the second region A2 is S(5,1). The initial step position within the third region A3 is S(5,6). The initial step position within the fourth region A4 is S(4,6).

[0172] Next, the laser processing processor 40 executes steps S315, S316, and S317. Steps S315, S316, and S317 are the same as steps S301, S302, and S303 described in the comparative example, and thus the description thereof is omitted.

[0173] After step S317, the laser processing processor 40 determines whether the current step position is the final step position within the n-th region An (step S318). For example, the final step position within the first region A1 is S(4,1). The final step position within the second region A2 is S(5,5). The final step position within the third region A3 is S(5,6). The final step position within the fourth region A4 is S(1,6).

[0174] When the laser processing processor 40 determines that it is not the final step position (step S318: No), it sets the data indicating the next step position adjacent to the current step position on the movement path (step S319), and returns the process to step S315.

[0175] The laser processing processor 40 repeatedly executes steps S315 to S317 until it reaches the final step position within the nth region An. When the laser processing processor 40 determines that it is the final step position within the nth region An (step S318: Yes), it determines whether the counter n is 4 (step S320).

[0176] When the counter n is not 4, the laser processing processor 40 returns the process to step S311. The laser processing processor 40 repeatedly executes steps S311 to S319 until the counter n becomes 4. When it determines that the counter n is 4 (step S320: Yes), the process ends.

[0177] 3.3 Effects

[0178] During hole machining, the laser processing apparatus 4a of the present embodiment uses the light shielding plate 60 to shield a plurality of condensing points P corresponding to the remaining region 47 shown in Figure 10 Therefore, without replacing the DOE 50, it is possible to perform hole machining only on the machining region 46. Therefore, even when the number of rows r and the number of columns s of the machining region 46 cannot be divided evenly by the number of rows j and the number of columns k of the multi-point pattern MP, high productivity can be maintained. In addition, in the present embodiment, the movement path is set to change the step position of the irradiation target to an adjacent step position, and the positioning of the light shielding plate 60 is at most 4 times, so high productivity can be maintained.

[0179] In addition, in the present embodiment, the first region A1 to the fourth region A4 are each regarded as a block region, but one or more of the first region A1 to the fourth region A4 may not be regarded as a block region and may be divided.

[0180] In addition, in the present embodiment, the light shielding plate 60 is set in an L shape, but the light shielding plate 60 may have any shape as long as it can shield a desired number of rows and columns of the multi-point pattern MP from the ends in the X direction and the Y direction. For example, the light shielding plate 60 may also have a shape of a rectangular opening with a size through which the entire multi-point pattern MP passes.

[0181] 4. Modifications of the First Embodiment

[0182] Next, a modification of the first embodiment will be described.

[0183] 4.1 Structure

[0184] The structure of the laser processing system 1b of this modification example is basically the same as that of the first embodiment. The difference between this modification example and the first embodiment is that the number of rows shielded by the light-shielding plate 60 to generate the second and third multi-point patterns MP2 and MP3 is 1, and the number of columns shielded by the light-shielding plate 60 to generate the third and fourth multi-point patterns MP3 and MP4 is 1.

[0185] Figures 21 - 24 The planar structure of the light-shielding plate 60 showing a modification example of the first embodiment is shown. The light-shielding plate 60 is, for example, an L-shaped form including sides parallel to the X direction and the Y direction, and is configured to be able to shield one row and one column of the multi-point pattern MP respectively. The light-shielding plate 60 is set at the first position to the fourth position by the laser processing processor 40.

[0186] Figure 21 The first position of the light-shielding plate 60 is shown. When the light-shielding plate 60 is set at the first position, the multi-point pattern MP passes through without being shielded by the light-shielding plate 60, thereby generating the first multi-point pattern MP1.

[0187] Figure 22 The second position of the light-shielding plate 60 is shown. When the light-shielding plate 60 is set at the second position, only one row of the multi-point pattern MP is shielded by the light-shielding plate 60, thereby generating the second multi-point pattern MP2.

[0188] Figure 23 The third position of the light-shielding plate 60 is shown. When the light-shielding plate 60 is set at the third position, only one row and one column of the multi-point pattern MP are shielded by the light-shielding plate 60, thereby generating the third multi-point pattern MP3.

[0189] Figure 24 The fourth position of the light-shielding plate 60 is shown. When the light-shielding plate 60 is set at the fourth position, only one column of the multi-point pattern MP is shielded by the light-shielding plate 60, thereby generating the fourth multi-point pattern MP4.

[0190] Figure 25 An example of a plurality of step positions S(m, n) set by the laser processing processor 40 showing a modification example of the first embodiment is shown. In this modification example, the first region A1 includes the step positions S(m, n) where 1 ≤ m ≤ 3 and 1 ≤ n ≤ 4. The second region A2 includes the step positions S(m, n) where 4 ≤ m ≤ 5 and 1 ≤ n ≤ 4. The third region A3 includes the step positions S(m, n) where 4 ≤ m ≤ 5 and 5 ≤ n ≤ 6. The fourth region A4 includes the step positions S(m, n) where 1 ≤ m ≤ 3 and 5 ≤ n ≤ 6.

[0191] The laser processing processor 40 determines the movement path of the object 45 to be processed, such that each step position S(m, n) in the first region A1 to the fourth region A4 becomes the irradiation target in sequence. In this modified example, S(3, 6) becomes the final step position on the movement path within the processing region 46.

[0192] 4.2 Operations

[0193] Next, the operations of the laser processing system 1a according to a modified example of the first embodiment will be described. The operation flow of the laser processing system 1a according to this modified example is basically the same as Figure 17 the operation flow of the laser processing system 1a of the first embodiment shown, but the processing contents of step S40 and step S50 are different.

[0194] Figure 26 The details of the generation and storage processing (step S40) of the position data according to a modified example of the first embodiment are shown. In this modified example, since the number of rows and columns of the condensing point P shielded by the light shield 60 are both 1 and are fixed values, in step S40, the steps S400 to S402 for calculating the remaining number of rows e and the remaining number of columns f shown in Figure 18 are not executed.

[0195] In this modified example, in step S40, first, the laser processing processor 40 stores the first position data D(1) representing the Figure 21 first position of the light shield 60 shown in into the memory (step S410). In addition, the laser processing processor 40 stores the second position data D(2) representing the Figure 22 second position of the light shield 60 shown in into the memory (step S411). In addition, the laser processing processor 40 stores the third position data D(3) representing the Figure 23 third position of the light shield 60 shown in into the memory (step S412). In addition, the laser processing processor 40 stores the fourth position data D(4) representing the Figure 24 fourth position of the light shield 60 shown in into the memory (step S413).

[0196] In addition, in this modified example, since the first position to the fourth position are positions independent of the remaining number of rows e and the remaining number of columns f, the first position data D(1) to the fourth position data D(4) can also be stored in the memory in advance.

[0197] Figure 27 The details of the determination processing (step S50) of the first region A1 to the fourth region A4 and the movement path according to a modified example of the first embodiment are shown. In this modified example, first, the laser processing processor 40 executes steps S510 to S512 in order to calculate the remaining number of rows e and the remaining number of columns f. Steps S510 to S512 are the same asFigure 18 The same processing as steps S400 to S402 shown above is performed.

[0198] Based on the calculated remaining number of rows e and remaining number of columns f, the laser processing processor 40 determines the quantities of the first to fourth multi-spot patterns MP1 to MP4, respectively (step S513). In order to block only the remaining number of rows e of the rows of the condensing point P, e second multi-spot patterns MP2 are required in the X direction. In addition, in order to block only the remaining number of columns f of the columns of the condensing point P, f fourth multi-spot patterns MP4 are required in the Y direction.

[0199] Next, as Figure 25 shown, the laser processing processor 40 determines the first to fourth regions A1 to A4 such that the first to fourth multi-spot patterns MP1 to MP4 are accommodated within the processing region 46 (step S514). Then, the laser processing processor 40 determines the movement path of the workpiece 45 such that each step position of the first to fourth regions A1 to A4 becomes the irradiation target in sequence (step S515). Steps S514 and S515 are the same processing as Figure 19 steps S500 and S501 shown above.

[0200] The hole processing in this modification is the same as the hole processing Figure 20 shown above. In addition, the initial step position and the final step position within the nth region An are different according to the first to fourth regions A1 to A4 determined in step S50.

[0201] In the Figure 25 example shown above, the initial step position within the first region A1 is S(1, 1). The initial step position within the second region A2 is S(4, 4). The initial step position within the third region A3 is S(5, 5). The initial step position within the fourth region A4 is S(3, 5).

[0202] In addition, the final step position within the first region A1 is S(3, 4). The final step position within the second region A2 is S(5, 4). The final step position within the third region A3 is S(4, 5). The final step position within the fourth region A4 is S(3, 6).

[0203] 4.3 Effects

[0204] In this modification as well, during hole processing, the light shielding plate 60 shields the rows corresponding to the amount of the remaining number of rows e of the condensing point P and the columns corresponding to the amount of the remaining number of columns f of the condensing point P. Therefore, similar to the first embodiment, high productivity can be maintained. In addition, in this modification, the movement distance of the light shielding plate 60 is only one row or one column. Therefore, the movement time of the light shielding plate 60 becomes shorter, and the positioning accuracy is improved. As a result, the productivity is further increased.

[0205] In addition, in the above-described modification, the first region A1 to the fourth region A4 are each set as a block region. However, one or more of the first region A1 to the fourth region A4 may not be set as a block region and may be divided.

[0206] 5. Second Embodiment

[0207] The laser processing system 1b of the second embodiment of the present disclosure will be described. In addition, the same reference numerals are given to the structures that are the same as those described above, and redundant descriptions are omitted unless otherwise specified.

[0208] 5.1 Structure

[0209] Figure 28 The structure of the laser processing system 1b of the second embodiment is schematically shown. The laser processing system 1b differs from the laser processing system 1a of the first embodiment only in the structure of the laser processing device 4b. In addition to the structure of the laser processing device 4a of the first embodiment, the laser processing device 4b includes a reduction transfer imaging optical system 52.

[0210] The reduction transfer imaging optical system 52 is disposed on the optical path of the plurality of laser beams Lv emitted from the condensing optical system 51. The reduction transfer imaging optical system 52 reduces and transfers the multi-point pattern MP formed on the focal plane 51a of the condensing optical system 51 onto the surface 45a of the workpiece 45.

[0211] In the present embodiment, the light shielding plate 60 is disposed on the focal plane 51a of the condensing optical system 51. The light shielding plate 60 is held by a bracket 62 that can move in the X direction and the Y direction on the XY stage 61. The XY stage 61 is fixed to the housing 41a and is controlled by the laser processing processor 40.

[0212] Figures 29 - 32 The planar structure of the light shielding plate 60 of the second embodiment is shown. Since the reduction transfer imaging optical system 52 transfers the inverted image of the multi-point pattern MP onto the surface 45a of the workpiece 45, the planar shape of the light shielding plate 60 of the present embodiment is set to be the shape obtained by inverting the planar shape of the light shielding plate 60 of the first embodiment in the X direction and the Y direction.

[0213] Figure 29 The first position of the light shielding plate 60 is shown. Figure 30 The second position of the light shielding plate 60 is shown. Figure 31 The third position of the light shielding plate 60 is shown. Figure 32 The fourth position of the light shielding plate 60 is shown. The first to fourth positions of the present embodiment are the same as the first to fourth positions of the first embodiment except for being inverted in the X direction and the Y direction.

[0214] 5.2 Operation

[0215] The operation of the laser processing system 1b of the second embodiment is the same as that of the laser processing system 1a of the first embodiment, except that the moving direction when moving the light shielding plate 60 is opposite to that of the first embodiment.

[0216] 5.3 Effects

[0217] For example, when the workpiece 45 is a non-alkali glass substrate, it is necessary to increase the target energy density Fm on the surface 45a of the workpiece 45 to several tens of J / cm 2 . Therefore, when the light shielding plate 60 is arranged near the surface 45a of the workpiece 45 as in the first embodiment, the light shielding plate 60 may be damaged. In contrast, in the present embodiment, the light shielding plate 60 is arranged on the focal plane 51a of the condensing optical system 51, so the energy density in the light shielding plate 60 is reduced, and damage to the light shielding plate 60 is suppressed. Specifically, if the magnification of the reduction transfer imaging optical system 52 is set to 1 / M, the energy density on the focal plane 51a becomes 1 / M of the target energy density Fm on the surface 45a of the workpiece 45 2 times. Here, it is assumed that M > 1.

[0218] In addition, in order to suppress breakage of the light shielding plate 60, it is preferable to use a light shielding plate 60 with a large thickness. However, when the pitch of the holes H formed in the workpiece 45 is small or the numerical aperture NA is large, it is difficult to arrange the light shielding plate 60 with a large thickness on the surface 45a of the workpiece 45. In contrast, in the present embodiment, the light shielding plate 60 is arranged on the focal plane 51a where the condensing points P are arranged at a pitch larger than the pitch of the holes H, so a light shielding plate 60 with a larger thickness than that of the first embodiment can be used.

[0219] In addition, the same modifications as those of the first embodiment can also be made in the present embodiment.

[0220] 6. Third Embodiment

[0221] The laser processing system 1c of the third embodiment of the present disclosure will be described. In addition, the same reference numerals are given to the structures having the same structures as those described above, and repeated descriptions are omitted unless otherwise specified.

[0222] 6.1 Structure

[0223] Figure 33Schematically shows the structure of the laser processing system 1c of the third embodiment. The structure of the laser processing system 1c is different from that of the laser processing system 1b of the second embodiment only in the structure of the laser processing device 4c. In addition to the structure of the laser processing device 4b of the second embodiment, the laser processing device 4c further includes a beam steering device 53 and a pointing measurement device 70.

[0224] In the present embodiment, the XY stage 61 is not provided, and the light shielding plate 60 is fixed to the housing 41a via the bracket 62. That is, in the present embodiment, the light shielding plate 60 does not move.

[0225] The beam steering device 53 includes two actuators 53a and 53b that make the angle of the high reflector 47c variable. The actuators 53a and 53b are controlled by the laser processing processor 40 to change the angle of the high reflector 47c around two orthogonal axes.

[0226] The pointing measurement device 70 includes a beam splitter 71, a condenser lens 72, and a two-dimensional optical sensor 73. The beam splitter 71 is disposed on the optical path of the laser beam Lb between the beam steering device 53 and the DOE 50. The beam splitter 71 reflects a part of the laser beam Lb reflected by the high reflector 47c and transmits the other laser beam Lb. The laser beam Lb transmitted through the beam splitter 71 is incident on the DOE 50.

[0227] The condenser lens 72 is disposed on the optical path of the laser beam Lb reflected by the beam splitter 71 to condense the laser beam Lb. The two-dimensional optical sensor 73 is disposed at a position where the condensed image generated by the condenser lens 72 on the focal plane can be detected. The two-dimensional optical sensor 73 may be a two-dimensional PSD (Position Sensitive Detector) or a two-dimensional photodiode array. The two-dimensional optical sensor 73 measures the position of the condensed image, that is, the pointing of the laser beam Lb, and sends the measured value to the laser processing processor 40.

[0228] In the present embodiment, the laser processing processor 40 changes the incident angle of the laser beam Lb incident on the DOE 50 by controlling the angle of the high reflector 47c via the beam steering device 53. According to the change in the incident angle of the laser beam Lb incident on the DOE 50, the multi-point pattern MP moves within the focal plane 51a. That is, the beam steering device 53 is an example of the "second actuator" of the technology of the present invention.

[0229] In the present embodiment, the laser processing processor 40 performs feedback control based on the measured value of the pointing sent from the pointing measurement device 70 so that the relative position of the light shielding plate 60 with respect to the multi-point pattern MP becomes the target position.

[0230] Figures 34 - 37Shows the planar structure of the light-shielding plate 60 of the third embodiment. The planar shape of the light-shielding plate 60 in this embodiment is the same as that of the light-shielding plate 60 in the second embodiment. In this embodiment, the relative position of the light-shielding plate 60 with respect to the multi-point pattern MP is changed by moving the multi-point pattern MP while the light-shielding plate 60 is fixed.

[0231] Figure 34 Shows the first position of the multi-point pattern MP. Figure 35 Shows the second position of the multi-point pattern MP. Figure 36 Shows the third position of the multi-point pattern MP. Figure 37 Shows the fourth position of the multi-point pattern MP. In this embodiment, similarly to the second embodiment, the first multi-point pattern MP1 to the fourth multi-point pattern MP4 are generated at the first position to the fourth position, respectively.

[0232] 6.2 Operations

[0233] In the operation of the laser processing system 1c of the third embodiment, the laser processing processor 40 selects any one of the first position to the fourth position by controlling the beam steering device 53 instead of the XY stage 61. Regarding other operations, they are the same as those of the laser processing system 1b of the second embodiment.

[0234] 6.3 Effects

[0235] In this embodiment, since the multi-point pattern MP is moved by the beam steering device 53, compared with the case of moving the light-shielding plate 60, the relative position of the light-shielding plate 60 with respect to the multi-point pattern MP can be moved and positioned more quickly. Thereby, the productivity of the light-shielding plate 60 is improved.

[0236] The pointing measurement device 70 is not an essential component, but by performing feedback control using the pointing measurement device 70, the relative position of the light-shielding plate 60 with respect to the multi-point pattern MP can be moved and positioned with high precision.

[0237] In addition, in the above embodiment, the incident angle of the laser Lb incident on the DOE 50 is changed by the beam steering device 53, but an acousto-optic element may also be used to change the incident angle of the laser Lb. As this acousto-optic element, an acousto-optic element of quartz that can also be used for ultraviolet rays is preferably used, and the incident angle of the laser Lb is controlled in the two-axis direction. This acousto-optic element is an example of the "second actuator" of the technology of the present disclosure.

[0238] In addition, the same modifications as those in the first embodiment can also be made in this embodiment.

[0239] 7. Method for manufacturing an electronic device

[0240] The laser processing methods of the above-described embodiments and modifications can be applied to the formation of through-holes in the glass substrate included in the interposer 102 in the manufacture of the following electronic device 100.

[0241] Figure 38 Schematically shows the structure of the electronic device 100. Figure 38 The illustrated electronic device 100 includes an integrated circuit chip 101, an interposer 102, and a circuit board 103. The integrated circuit chip 101 is, for example, a chip-shaped integrated circuit substrate on which an integrated circuit is formed on a silicon substrate. A plurality of bumps 101b electrically connected to the integrated circuit are provided on the integrated circuit chip 101.

[0242] The interposer 102 includes an insulating glass substrate in which a plurality of through-holes are formed, and a conductor that electrically connects the front and back of the glass substrate is provided in each through-hole. A plurality of pads connected to the bumps 101b provided on the integrated circuit chip 101 are formed on one surface of the interposer 102, and each pad is electrically connected to any one of the conductors in the through-holes. A plurality of bumps 102b are provided on the other surface of the interposer 102, and each bump 102b is electrically connected to any one of the conductors in the through-holes.

[0243] A plurality of pads connected to the respective bumps 102b are formed on one surface of the circuit board 103. In addition, the circuit board 103 includes a plurality of terminals electrically connected to these pads.

[0244] Figure 39 Shows the manufacturing method of the electronic device 100. As Figure 39 shown, the manufacturing method of the electronic device 100 in this specification includes a first bonding step SP1 and a second bonding step SP2. In the first bonding step SP1, the integrated circuit chip 101 is bonded to the interposer 102. Specifically, each bump 101b of the integrated circuit chip 101 is disposed on each pad of the interposer 102, and the bumps 101b and the pads are electrically connected to each other. Therefore, the integrated circuit chip 101 and the interposer 102 are electrically connected to each other.

[0245] In the second bonding step SP2, the interposer 102 is bonded to the circuit board 103. Specifically, each bump 102b of the interposer 102 is disposed on each pad of the circuit board 103, and the bumps 102b and the pads are electrically connected to each other. Therefore, the integrated circuit chip 101 is electrically connected to the circuit board 103 via the interposer 102. Through the above steps, the electronic device 100 is manufactured.

[0246] 8. Structural example of the laser processing processor

[0247] In the present disclosure, the laser processing processor 40 is constituted by, for example, a CPU (Central Processing Unit). The laser processing processor 40 executes the above-described various processes based on a program stored in a memory. Part or all of the functions of the laser processing processor 40 may also be implemented using an integrated circuit typified by an FPGA (Field Programmable Gate Array) or an ASIC (Application Specific Integrated Circuit).

[0248] The above description is illustrative rather than restrictive. Therefore, it will be apparent to those skilled in the art that various modifications can be made to the embodiments of the present disclosure without departing from the appended claims.

[0249] The terms used in this specification and the appended claims should be construed as "non-limiting" terms. For example, the term "comprising" or "including" should be construed as "not limited to the parts described as being included". The term "having" should be construed as "not limited to the parts described as being had". In addition, the phrase "a" described in this specification and the appended claims should be construed as "at least one" or "one or more". Further, a phrase such as "at least one of A, B, and C" should be construed as "A", "B", "C", "A + B", "A + C", "B + C", or "A + B + C", and should also be construed as including combinations thereof with elements other than "A", "B", and "C".

Claims

1. A laser processing device, wherein, the laser processing device includes: a diffractive optical element that divides a first laser into a plurality of second lasers and emits them; a condensing optical system that generates a lattice-shaped multi-point pattern in which a plurality of condensing points are arranged in a row direction and a column direction by condensing the plurality of second lasers; a first actuator that moves a workpiece; a light shielding plate that can shield at least one row and at least one column of the multi-point pattern respectively; a second actuator that changes the relative position of the light shielding plate with respect to the multi-point pattern in order to select any one of a first multi-point pattern, a second multi-point pattern, a third multi-point pattern, and a fourth multi-point pattern. The first multi-point pattern is generated by passing the multi-point pattern without being shielded by the light shielding plate, the second multi-point pattern is generated by shielding at least one row of the multi-point pattern with the light shielding plate, the third multi-point pattern is generated by shielding at least one row and at least one column of the multi-point pattern with the light shielding plate, and the fourth multi-point pattern is generated by shielding at least one column of the multi-point pattern with the light shielding plate; and a laser processing processor that performs the following processing: by controlling the first actuator, the workpiece is moved so as to irradiate any one of the first multi-point pattern to the fourth multi-point pattern at a plurality of step positions set in a processing area that needs hole processing on the surface of the workpiece; and by controlling the second actuator, any one of the first multi-point pattern to the fourth multi-point pattern is selected for each of the step positions.

2. The laser processing device according to claim 1, wherein, when the number of rows of the multi-point pattern is set as j, the number of rows of the holes in the processing area is set as r, and the number of rows shielded by the light shielding plate to generate the second multi-point pattern and the third multi-point pattern is set as e, the relationship e = j - MOD(r, j) is satisfied; when the number of columns of the multi-point pattern is set as k, the number of columns of the holes in the processing area is set as s, and the number of columns shielded by the light shielding plate to generate the third multi-point pattern and the fourth multi-point pattern is set as f, the relationship f = k - MOD(s, k) is satisfied.

3. The laser processing device according to claim 1, wherein, the number of rows shielded by the light shielding plate to generate the second multi-point pattern and the third multi-point pattern is 1; the number of columns shielded by the light shielding plate to generate the third multi-point pattern and the fourth multi-point pattern is 1.

4. The laser processing device according to claim 1, wherein, the laser processing processor respectively determines a first area to a fourth area for irradiating the first multi-point pattern to the fourth multi-point pattern so as to perform hole processing only on the processing area.

5. The laser processing device according to claim 4, wherein, the first area to the fourth area in the processing area are each a block area.

6. The laser processing device according to claim 4, wherein, the laser processing processor controls the first actuator so as to change the step position of the irradiation target to an adjacent step position.

7. The laser processing apparatus according to claim 1, wherein, the second actuator is a two-axis moving stage that moves the light shielding plate in a direction perpendicular to the optical axis of the condenser optical system.

8. The laser processing apparatus according to claim 1, wherein, the second actuator is a beam steering device that changes the relative position of the light shielding plate with respect to the multi-point pattern by changing the incident angle of the first laser incident on the diffractive optical element.

9. The laser processing apparatus according to claim 8, wherein, the laser processing apparatus further includes a pointing measurement device that is disposed on the optical path of the first laser between the beam steering device and the diffractive optical element and measures the pointing of the first laser.

10. The laser processing apparatus according to claim 9, wherein, the laser processing processor performs feedback control on the relative position of the light shielding plate with respect to the multi-point pattern based on the measurement value of the pointing measured by the pointing measurement device.

11. The laser processing apparatus according to claim 1, wherein, the workpiece is arranged such that its surface coincides with the focal plane of the condenser optical system.

12. The laser processing apparatus according to claim 1, wherein, the laser processing apparatus further includes a reduction transfer imaging optical system that reduces and transfers the multi-point pattern generated by the condenser optical system onto the surface of the workpiece.

13. The laser processing apparatus according to claim 12, wherein, the light shielding plate is disposed on the focal plane of the condenser optical system.

14. A control method for a laser processing apparatus, wherein, the laser processing apparatus includes: a diffractive optical element that divides a first laser into a plurality of second lasers and emits them; a condenser optical system that generates a lattice-shaped multi-point pattern in which a plurality of focal points are arranged in a row direction and a column direction by condensing the plurality of second lasers; a first actuator that moves the workpiece; a light shielding plate that can shield at least one row and at least one column of the multi-point pattern; and a second actuator that changes the relative position of the light shielding plate with respect to the multi-point pattern in order to select any one of a first multi-point pattern, a second multi-point pattern, a third multi-point pattern, and a fourth multi-point pattern. The first multi-point pattern is generated by passing the multi-point pattern without being shielded by the light shielding plate, the second multi-point pattern is generated by shielding at least one row of the multi-point pattern with the light shielding plate, the third multi-point pattern is generated by shielding at least one row and at least one column of the multi-point pattern with the light shielding plate, and the fourth multi-point pattern is generated by shielding at least one column of the multi-point pattern with the light shielding plate. The control method for the laser processing apparatus includes the following processes: By controlling the first actuator, the workpiece is moved so as to irradiate each of a plurality of step positions set in a processing area that requires hole processing on the surface of the workpiece with any one of the first multi-point pattern to the fourth multi-point pattern. and by controlling the second actuator to select any one of the first multi-point pattern to the fourth multi-point pattern for each of the step positions.

15. A method of manufacturing an electronic device, wherein, the method of manufacturing the electronic device includes the following steps: forming a plurality of through holes on a glass substrate as a workpiece using a laser processing device; bonding an interposer to an integrated circuit chip to be electrically connected to each other, the interposer having the glass substrate and conductors respectively disposed in the plurality of through holes; and bonding the interposer to a circuit board to be electrically connected to each other, the laser processing device includes: a diffractive optical element that divides a first laser into a plurality of second lasers and emits them; a condensing optical system that generates a lattice-shaped multi-point pattern in which a plurality of condensed spots are arranged in a row direction and a column direction by condensing the plurality of second lasers; a first actuator that moves the workpiece; a shutter that can block at least one row and at least one column of the multi-point pattern respectively; a second actuator that changes the relative position of the shutter with respect to the multi-point pattern in order to select any one from the first multi-point pattern, the second multi-point pattern, the third multi-point pattern, and the fourth multi-point pattern. The first multi-point pattern is generated by passing the multi-point pattern without being blocked by the shutter, the second multi-point pattern is generated by blocking at least one row of the multi-point pattern by the shutter, the third multi-point pattern is generated by blocking at least one row and at least one column of the multi-point pattern by the shutter, and the fourth multi-point pattern is generated by blocking at least one column of the multi-point pattern by the shutter; a laser processing processor that moves the workpiece by controlling the first actuator so as to irradiate any one of the first multi-point pattern to the fourth multi-point pattern to each of a plurality of step positions set in a processing area on the surface of the workpiece that requires hole processing, and by controlling the second actuator, selects any one of the first multi-point pattern to the fourth multi-point pattern for each of the step positions.

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