Semiconductor device

Abstract

The semiconductor device includes a heat dissipation member, an insulating layer, a conductive layer, and a semiconductor element. The insulating layer is located on one side of the heat dissipation member in the first direction, and is laminated on the heat dissipation member. The conductive layer is located on the opposite side of the heat dissipation member with respect to the insulating layer, and is bonded to the insulating layer. The semiconductor element is bonded to the conductive layer. The semiconductor element is conducted with the conductive layer. When viewed in the first direction, the insulating layer protrudes further outward than the conductive layer.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device. Background Art

[0002] An example of a semiconductor device including a cooler is disclosed in Patent Document 1. The cooler includes a housing having a hollow region and a heat sink. The housing is provided with an opening leading to the hollow region. The heat sink is mounted on the housing so as to block the opening. A part of the heat sink is accommodated in the hollow region. The semiconductor device is bonded to a part of the heat sink that protrudes outward from the hollow region via a bonding material. When cooling water flows in the hollow region, the cooling water contacts the heat sink. Thus, the semiconductor device can be cooled via the heat sink.

[0003] In the heat sink disclosed in Patent Document 1, a portion where the bonding material is not coated is exposed to the outside. Therefore, the creepage distance from the semiconductor device to the heat sink is set relatively short. Since the material of the heat sink generally includes metal, the withstand voltage of the semiconductor device may be reduced due to the presence of the heat sink.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: WO 2017 / 094370 Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] One problem of the present disclosure is to provide an improved semiconductor device as compared with the prior art. In particular, in view of the above situation, one problem of the present disclosure is to provide a semiconductor device capable of improving the withstand voltage of the device.

[0009] Means for Solving the Problems

[0010] The semiconductor device provided by the first aspect of the present disclosure includes: a heat dissipation member; an insulating layer that is located on one side of the heat dissipation member in a first direction and laminated on the heat dissipation member; a conductive layer that is located on the side opposite to the heat dissipation member with respect to the insulating layer and bonded to the insulating layer; and a semiconductor element that is bonded to the conductive layer. The semiconductor element is electrically connected to the conductive layer. When observed in the first direction, the insulating layer protrudes outward more than the conductive layer.

[0011] Advantages of the Invention

[0012] According to the above structure, for example, the withstand voltage of the semiconductor device can be improved.

[0013] Other features and advantages of the present disclosure will become more apparent from the following detailed description based on the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure.

[0015] Figure 2 is Figure 1 a top view of the semiconductor device shown.

[0016] Figure 3 is a top view corresponding to Figure 2 through the encapsulating resin.

[0017] Figure 4 is Figure 3 a partial enlarged view of

[0018] Figure 5 is a top view corresponding to Figure 2 through the first conductive member, and omitting the illustration of the encapsulating resin and the second conductive member.

[0019] Figure 6 is Figure 1 a right side view of the semiconductor device shown.

[0020] Figure 7 is Figure 1 a bottom view of the semiconductor device shown.

[0021] Figure 8 is a cross-sectional view taken along line VIII-VIII of Figure 3

[0022] Figure 9 is a cross-sectional view taken along line IX-IX of Figure 3

[0023] Figure 10 is Figure 9 a partial enlarged view of the first element and its periphery shown.

[0024] Figure 11 is Figure 9 a partial enlarged view of the second element and its periphery shown.

[0025] Figure 12 is a cross-sectional view taken along line XII-XII of Figure 3

[0026] Figure 13 is a cross-sectional view taken along line XIII-XIII of Figure 3

[0027] Figure 14 ​​​​Is a bottom view of the semiconductor device according to the second embodiment of the present disclosure.

[0028] Figure 15 Is a cross-sectional view taken along Figure 14 the XV-XV line.

[0029] Figure 16 Is a cross-sectional view taken along Figure 14 the XVI-XVI line.

[0030] Figure 17 Is a bottom view of the semiconductor device according to the third embodiment of the present disclosure.

[0031] Figure 18 Is a cross-sectional view taken along Figure 17 the XVIII-XVIII line.

[0032] Figure 19 Is a cross-sectional view taken along Figure 17 the XIX-XIX line.

[0033] Figure 20 Is a top view of the semiconductor device according to the fourth embodiment of the present disclosure.

[0034] Figure 21 Is Figure 20 the right side view of the semiconductor device shown.

[0035] Figure 22 Is a cross-sectional view taken along Figure 20 the XXII-XXII line.

[0036] Figure 23 Is a cross-sectional view taken along Figure 20 the XXIII-XXIII line.

[0037] Figure 24 Is Figure 23 the partial enlarged view of. Detailed Embodiment

[0038] The embodiments for implementing the present disclosure will be described based on the accompanying drawings.

[0039] First Embodiment:

[0040] Based on Figures 1 to 13, a semiconductor device A10 according to a first embodiment of the present disclosure will be described. The semiconductor device A10 may include a heat dissipation component 80, an insulating layer 71, two metal layers 72, a bonding layer 73, a first conductive layer 121, a second conductive layer 122, a first input terminal 13, an output terminal 14, a second input terminal 15, a plurality of semiconductor elements 21, a first conduction component 31, a second conduction component 32, and a sealing resin 50. The semiconductor device A10 can include a first signal terminal 161, a second signal terminal 162, a third signal terminal 171, a fourth signal terminal 172, a pair of fifth signal terminals 181, a pair of sixth signal terminals 182, a seventh signal terminal 19, a pair of thermistors 22, and a pair of control wirings 60. Here, in Figure 3 and Figure 4 , for ease of understanding, the sealing resin 50 is shown through. In Figure 3 , the sealing resin 50 shown through is represented by a phantom line (double-dot dash line). In Figure 5 , for ease of understanding, the first conduction component 31 is shown through, and the illustration of the second conduction component 32 and the sealing resin 50 is omitted. In Figure 5 , the first conduction component 31 shown through is represented by a phantom line. In Figure 3 , the IX-IX line is represented by a single-dot dash line.

[0041] In the description of the semiconductor device A10, for convenience, the normal direction of the inner surface 811 of the base 81 of the heat dissipation component 80 described later is referred to as the "first direction z". One direction orthogonal to the first direction z is referred to as the "second direction x". The direction orthogonal to the first direction z and the second direction x is referred to as the "third direction y".

[0042] The semiconductor device A10 can convert the DC power supply voltage applied to the first input terminal 13 and the second input terminal 15 into AC power by a plurality of semiconductor elements 21. The converted AC power can be input from the output terminal 14 to a power supply object such as a motor.

[0043] The heat dissipation component 80 can be used for cooling the semiconductor device A10. The heat dissipation component 80 can be made of a material containing aluminum (Al), for example. In the present disclosure, the "material containing aluminum" refers to a material composed of only aluminum, a material in which an additive metal or the like is added to aluminum, various alloys of aluminum, etc.

[0044] As Figure 8 , Figure 9 , Figure 12 and Figure 13As shown, the heat dissipation component 80 may have a base 81 and a heat dissipation part 82. The base 81 may be in the shape of a flat plate. The base 81 may have an inner surface 811, an outer surface 812, and an end face 813. The inner surface 811 and the outer surface 812 face opposite sides in the first direction z. As Figure 7 shown, the outer surface 812 can be exposed to the outside from the sealing resin 50. The end face 813 faces a direction orthogonal to the first direction z. When viewed from a direction orthogonal to the first direction z, the sealing resin 50 can overlap with the end face 813. The end face 813 is covered by the sealing resin 50.

[0045] As Figure 8 , Figure 9 , Figure 12 and Figure 13 shown, the heat dissipation part 82 may be configured to protrude from the outer surface 812 of the base 81 in the first direction z. The heat dissipation part 82 may be located on the side opposite to the insulating layer 71 with respect to the base 81 in the first direction z. As Figure 7 shown, the heat dissipation part 82 may be a plurality of pins separated from each other in a direction orthogonal to the first direction z. When viewed in the first direction z, the heat dissipation part 82 can overlap with the first conductive layer 121 and the second conductive layer 122 respectively.

[0046] As Figures 8 to 13 shown, the insulating layer 71 can be laminated on the inner surface 811 of the base 81 of the heat dissipation component 80. Therefore, the insulating layer 71 can be located on one side of the heat dissipation component 80 in the first direction z. The insulating layer 71 may be configured to be in contact with the base 81. As Figure 5 shown, the insulating layer 71 may cover the entire inner surface 811. The insulating layer 71 can be made of a material including resin. In addition, as the material of the insulating layer 71, a material including ceramic can be used. The material of the insulating layer 71 may be a material with a relatively high thermal conductivity. The dimension of the insulating layer 71 in the first direction z may be smaller than the dimension of the base 81 in the first direction z.

[0047] As Figure 8 and Figure 9 shown, two metal layers 72 can be laminated on the insulating layer 71. The two metal layers 72 may be located on the side opposite to the heat dissipation component 80 with respect to the insulating layer 71. The two metal layers 72 may be separated from each other in the second direction x. The composition of the two metal layers 72 may include, for example, copper (Cu).

[0048] As Figures 8 to 11As shown, the first conductive layer 121 and the second conductive layer 122 may be located on the side opposite to the heat dissipation component 80 with respect to the insulating layer 71 as a reference. The first conductive layer 121 and the second conductive layer 122 may be joined to the insulating layer 71 via two metal layers 72. The composition of the first conductive layer 121 and the second conductive layer 122 may include copper. The first conductive layer 121 and the second conductive layer 122 may be separated from each other in the second direction x. As Figure 8 and Figure 9 shown, the first conductive layer 121 may have a first main surface 121A facing the same side as the inner surface 811 of the base 81 of the heat dissipation component 80 in the first direction z. As Figure 8 and Figure 9 shown, the second conductive layer 122 may have a second main surface 122A facing the same side as the first main surface 121A in the first direction z.

[0049] As Figures 8 to 11 shown, the bonding layer 73 may be configured to bond the two metal layers 72 to the first conductive layer 121 and the second conductive layer 122 individually. The bonding layer 73 is, for example, solder. In addition, the bonding layer 73 may include a calcined body of metal particles.

[0050] As Figure 10 and Figure 11 shown, the dimensions of the first conductive layer 121 and the second conductive layer 122 in the first direction z may be larger than the dimension of the insulating layer 71 in the first direction z. As Figure 5 shown, when observed in the first direction z, the insulating layer 71 can protrude outwardly beyond the first conductive layer 121 and the second conductive layer 122, respectively.

[0051] As Figure 5 and Figure 9 shown, a plurality of semiconductor elements 21 can be mounted on either the first conductive layer 121 or the second conductive layer 122. The plurality of semiconductor elements 21 may be, for example, MOSFETs (Metal - Oxide - Semiconductor Field - Effect Transistors). In addition, the plurality of semiconductor elements 21 may be switching elements such as IGBTs (Insulated Gate Bipolar Transistors), diodes. In the description of the semiconductor device A10, the plurality of semiconductor elements 21 are taken as n - channel type and vertical - structure MOSFETs. The plurality of semiconductor elements 21 may include a compound semiconductor substrate. The composition of the compound semiconductor substrate may include silicon carbide (SiC).

[0052] As Figure 5As shown, in the semiconductor device A10, the plurality of semiconductor elements 21 may include a plurality of first elements 21A and a plurality of second elements 21B. The structure of each of the plurality of second elements 21B may be the same as the structure of each of the plurality of first elements 21A. The plurality of first elements 21A may be mounted on the first main surface 121A of the first conductive layer 121. The plurality of first elements 21A may be positioned along the third direction y. The plurality of second elements 21B may be mounted on the second main surface 122A of the second conductive layer 122. The plurality of second elements 21B may be positioned along the third direction y.

[0053] As Figure 5 , Figure 10 and Figure 11 shown, the plurality of semiconductor elements 21 may have a first electrode 211, a second electrode 212, a third electrode 213, and a fourth electrode 214.

[0054] As Figure 10 and Figure 11 shown, the first electrode 211 may face either the first conductive layer 121 or the second conductive layer 122. It may be configured such that a current corresponding to the power before being converted by the semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 may correspond to the drain electrode of the semiconductor element 21.

[0055] As Figure 10 and Figure 11 shown, the second electrode 212 may be on the opposite side of the first electrode 211 in the first direction z. It may be configured such that a current corresponding to the power after being converted by the semiconductor element 21 flows through the second electrode 212. That is, the second electrode 212 may correspond to the source electrode of the semiconductor element 21.

[0056] As Figure 10 and Figure 11 shown, the third electrode 213 may be on the same side as the second electrode 212 in the first direction z. A gate voltage for driving the semiconductor element 21 may be applied to the third electrode 213. That is, the third electrode 213 may correspond to the gate electrode of the semiconductor element 21. As Figure 5 shown, when observed in the first direction z, the area of the third electrode 213 may be smaller than the area of the second electrode 212.

[0057] As Figure 5 shown, the fourth electrode 214 is on the same side as the second electrode 212 in the first direction z and is beside the third electrode 213 in the third direction y. It may be configured such that the potential of the fourth electrode 214 is equal to the potential of the second electrode 212.

[0058] As Figure 10 and Figure 11As shown, the conductive bonding layer 23 can be interposed between any one of the first conductive layer 121 and the second conductive layer 122 and the first electrode 211 of any one of the plurality of semiconductor elements 21. The conductive bonding layer 23 is, for example, solder. In addition, the conductive bonding layer 23 can include a calcined body of metal particles. The first electrodes 211 of the plurality of first elements 21A can be conductively bonded to the first main surface 121A of the first conductive layer 121 via the conductive bonding layer 23. Thus, the first electrodes 211 of the plurality of first elements 21A can be electrically connected to the first conductive layer 121. The first electrodes 211 of the plurality of second elements 21B can be conductively bonded to the second main surface 122A of the second conductive layer 122 via the conductive bonding layer 23. Thus, the first electrodes 211 of the plurality of second elements 21B can be electrically connected to the second conductive layer 122.

[0059] As Figure 3 and Figure 9 shown, the first input terminal 13 can be located on the side opposite to the second conductive layer 122 with the first conductive layer 121 interposed therebetween in the second direction x, and connected to the first conductive layer 121. Thus, the first input terminal 13 can be electrically connected to the first electrodes 211 of the plurality of first elements 21A via the first conductive layer 121. The first input terminal 13 can be a P terminal (positive electrode) to which a DC power supply voltage to be converted is applied. The first input terminal 13 can be configured to extend from the first conductive layer 121 in the second direction x. The first input terminal 13 can have a covering portion 13A and an exposed portion 13B. As Figure 9 shown, the covering portion 13A can be connected to the first conductive layer 121 and covered with the sealing resin 50. The covering portion 13A can be flush with the first main surface 121A of the first conductive layer 121. The exposed portion 13B can extend from the covering portion 13A in the second direction x and be exposed from the sealing resin 50.

[0060] As Figure 3 and Figure 8 shown, the output terminal 14 can be located on the side opposite to the first conductive layer 121 with the second conductive layer 122 interposed therebetween in the second direction x, and connected to the second conductive layer 122. Thus, the output terminal 14 can be electrically connected to the first electrodes 211 of the plurality of second elements 21B via the second conductive layer 122. The AC power converted by the plurality of semiconductor elements 21 can be output from the output terminal 14. In the semiconductor device A10, the output terminal 14 can include a pair of regions separated from each other in the third direction y. In addition, the output terminal 14 can be a single structure that does not include the pair of regions. The output terminal 14 can have a covering portion 14A and an exposed portion 14B. As Figure 8As shown, the covering portion 14A can be connected to the second conductive layer 122 and covered by the sealing resin 50. The covering portion 14A can be flush with the surface of the second main surface 122A of the second conductive layer 122. The exposed portion 14B can extend from the covering portion 14A in the second direction x and be exposed from the sealing resin 50.

[0061] As Figure 3 and Figure 8 shown, the second input terminal 15 can be located on the same side as the first input terminal 13 with respect to the first conductive layer 121 and the second conductive layer 122 in the second direction x, and at a position away from the first conductive layer 121 and the second conductive layer 122. The second input terminal 15 can be electrically connected to the second electrodes 212 of the plurality of second elements 21B. The second input terminal 15 can be the N terminal (negative electrode) to which the DC power supply voltage to be converted is applied. The second input terminal 15 can include a pair of regions separated from each other in the third direction y. The first input terminal 13 can be located between the pair of regions in the third direction y. The second input terminal 15 can have a covering portion 15A and an exposed portion 15B. As Figure 8 shown, the covering portion 15A can be separated from the first conductive layer 121 and covered by the sealing resin 50. The exposed portion 15B can extend from the covering portion 15A in the second direction x and be exposed from the sealing resin 50.

[0062] A pair of control wirings 60 can form a part of the conduction paths of the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, a pair of fifth signal terminals 181, a pair of sixth signal terminals 182, and the plurality of semiconductor elements 21. As Figures 3 to 5 shown, the pair of control wirings 60 can include a first wiring 601 and a second wiring 602. In the second direction x, the first wiring 601 can be located between the plurality of first elements 21A and the first input terminal 13 and the second input terminal 15. The first wiring 601 can be joined to the first main surface 121A of the first conductive layer 121. The first wiring 601 can form a part of the conduction path of the seventh signal terminal 19 and the first conductive layer 121. In the second direction x, the second wiring 602 can be located between the plurality of second elements 21B and the output terminal 14. The second wiring 602 can be joined to the second main surface 122A of the second conductive layer 122. As Figure 10 and Figure 11 shown, the pair of control wirings 60 can have an insulating layer 61, a plurality of wiring layers 62, a metal layer 63, and a plurality of sleeves 64. The pair of control wirings 60 can be covered by the sealing resin 50 except for a part of each of the plurality of sleeves 64.

[0063] As Figure 10 and Figure 11As shown, the insulating layer 61 may include a portion interposed between a plurality of wiring layers 62 and the metal layer 63 in the first direction z. The insulating layer 61 may be made of, for example, ceramics. The insulating layer 61 may be configured to include an insulating resin sheet in addition to ceramics.

[0064] As Figure 10 and Figure 11 shown, the plurality of wiring layers 62 may be located on one side of the insulating layer 61 in the first direction z. The composition of the plurality of wiring layers 62 may include copper. As Figure 5 shown, the plurality of wiring layers 62 may include a first wiring layer 621, a second wiring layer 622, a pair of third wiring layers 623, a fourth wiring layer 624, and a fifth wiring layer 625. The pair of third wiring layers 623 may be adjacent to each other in the third direction y.

[0065] As Figure 10 and Figure 11 shown, the metal layer 63 may be located on the side opposite to the plurality of wiring layers 62 with the insulating layer 61 interposed therebetween in the first direction z. The composition of the metal layer 63 may include copper. The metal layer 63 of the first wiring 601 may be joined to the first main surface 121A of the first conductive layer 121 through the first adhesive layer 68. The metal layer 63 of the second wiring 602 may be joined to the second main surface 122A of the second conductive layer 122 through the first adhesive layer 68. The first adhesive layer 68 may be made of a conductive material or a non-conductive material. The first adhesive layer 68 may be made of, for example, solder.

[0066] As Figure 10 and Figure 11 shown, the plurality of sleeves 64 may be respectively joined to any one of the plurality of wiring layers 62 through the second adhesive layer 69. The plurality of sleeves 64 can be made of a conductive material such as metal. Each of the plurality of sleeves 64 may have a cylindrical shape extending along the first direction z. One end of the plurality of sleeves 64 can be conductively joined to any one of the plurality of wiring layers 62. As Figure 2 and Figure 9 shown, the end surface 641 corresponding to the other end of the plurality of sleeves 64 may be exposed from the top surface 51 of the sealing resin 50 described later. The second adhesive layer 69 may have conductivity. The second adhesive layer 69 is, for example, solder.

[0067] As Figure 4 shown, one of the pair of thermistors 22 may be conductively joined to the pair of third wiring layers 623 of the first wiring 601. As Figure 4As shown, another one of the pair of thermistors 22 can be conductively joined to a pair of third wiring layers 623 of the second wiring 602. The pair of thermistors 22 can be, for example, NTC (Negative Temperature Coefficient) thermistors. The NTC thermistors can have the property that the resistance decreases slowly as the temperature rises. The pair of thermistors 22 can be used as a temperature detection sensor for the semiconductor device A10.

[0068] As Figure 1 shown, the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, a pair of fifth signal terminals 181, a pair of sixth signal terminals 182, and the seventh signal terminal 19 can each be constituted by a metal pin extending in the first direction z. These terminals can protrude from the top surface 51 of the sealing resin 50 described later. These terminals can be respectively press-fitted into a plurality of sleeves 64 of the pair of control wirings 60. Thereby, each of these terminals can be supported by any one of the plurality of sleeves 64 and conduct with any one of the plurality of wiring layers 62.

[0069] As Figure 5 and Figure 10 shown, the first signal terminal 161 can be press-fitted into the sleeve 64 that joins the first wiring layer 621 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. Thereby, the first signal terminal 161 can be supported by the sleeve 64 and conduct with the first wiring layer 621 of the first wiring 601. The first signal terminal 161 can conduct with the third electrodes 213 of the plurality of first elements 21A. A gate voltage for driving the plurality of first elements 21A can be applied to the first signal terminal 161.

[0070] As Figure 5 and Figure 11 shown, the second signal terminal 162 can be press-fitted into the sleeve 64 that joins the first wiring layer 621 of the second wiring 602 among the plurality of sleeves 64 of the pair of control wirings 60. Thereby, the second signal terminal 162 can be supported by the sleeve 64 and conduct with the first wiring layer 621 of the second wiring 602. The second signal terminal 162 can conduct with the third electrodes 213 of the plurality of second elements 21B. A gate voltage for driving the plurality of second elements 21B can be applied to the second signal terminal 162.

[0071] As Figure 2 shown, the third signal terminal 171 can be located beside the first signal terminal 161 in the third direction y. As Figure 5As shown, the third signal terminal 171 can be pressed into the sleeve 64 among the plurality of sleeves 64 of the pair of control wirings 60 that is joined to the second wiring layer 622 of the first wiring 601. Thus, the third signal terminal 171 can be supported by the sleeve 64 and conduct with the second wiring layer 622 of the first wiring 601. The third signal terminal 171 can conduct with the fourth electrodes 214 of the plurality of first elements 21A. A voltage corresponding to the maximum current among the currents flowing through the fourth electrodes 214 of the respective plurality of first elements 21A can be applied to the third signal terminal 171.

[0072] As Figure 2 shown, the fourth signal terminal 172 can be located beside the second signal terminal 162 in the third direction y. As Figure 5 shown, the fourth signal terminal 172 can be pressed into the sleeve 64 among the plurality of sleeves 64 of the pair of control wirings 60 that is joined to the second wiring layer 622 of the second wiring 602. Thus, the fourth signal terminal 172 can be supported by the sleeve 64 and conduct with the second wiring layer 622 of the second wiring 602. The fourth signal terminal 172 can conduct with the fourth electrodes 214 of the plurality of second elements 21B. A voltage corresponding to the maximum current among the currents flowing through the fourth electrodes 214 of the respective plurality of second elements 21B can be applied to the fourth signal terminal 172.

[0073] As Figure 2 shown, a pair of fifth signal terminals 181 can be located on the side opposite to the third signal terminal 171 with the first signal terminal 161 therebetween in the third direction y. The pair of fifth signal terminals 181 can be adjacent to each other in the third direction y. As Figure 5 shown, the pair of fifth signal terminals 181 can be respectively pressed into the pair of sleeves 64 among the plurality of sleeves 64 of the pair of control wirings 60 that are joined to the pair of third wiring layers 623 of the first wiring 601. Thus, the pair of fifth signal terminals 181 can be supported by the pair of sleeves 64 and conduct with the pair of third wiring layers 623 of the first wiring 601. The pair of fifth signal terminals 181 can conduct with the thermistor 22 among the pair of thermistors 22 that is conductively joined to the pair of third wiring layers 623 of the first wiring 601.

[0074] As Figure 2 shown, a pair of sixth signal terminals 182 can be located on the side opposite to the fourth signal terminal 172 with the second signal terminal 162 therebetween in the third direction y. The pair of sixth signal terminals 182 can be adjacent to each other in the third direction y. As Figure 5As shown, a pair of sixth signal terminals 182 can be respectively pressed into a pair of sleeves 64 among the multiple sleeves 64 of a pair of control wirings 60, the pair of sleeves 64 being joined to a pair of third wiring layers 623 of the second wiring 602. Thus, the pair of sixth signal terminals 182 can be supported by the pair of sleeves 64 and conduct electricity with the pair of third wiring layers 623 of the second wiring 602. The pair of sixth signal terminals 182 can conduct electricity with a thermistor 22 among the pair of thermistors 22 that is conductively joined to the pair of third wiring layers 623 of the second wiring 602.

[0075] As Figure 2 shown, the seventh signal terminal 19 can be located on the side opposite to the first signal terminal 161 with the third signal terminal 171 therebetween in the third direction y. As Figure 5 shown, the seventh signal terminal 19 can be pressed into a sleeve 64 among the multiple sleeves 64 of a pair of control wirings 60, the sleeve 64 being joined to the fifth wiring layer 625 of the first wiring 601. Thus, the seventh signal terminal 19 can be supported by the sleeve 64 and conduct electricity with the fifth wiring layer 625 of the first wiring 601. The seventh signal terminal 19 can conduct electricity with the first conductive layer 121. A voltage equivalent to the DC power input to the first input terminal 13 and the second input terminal 15 can be applied to the seventh signal terminal 19.

[0076] As Figure 5 shown, multiple first wires 41 can be conductively joined to the third electrodes 213 of multiple first elements 21A and the fourth wiring layer 624 of the first wiring 601. Figure 5 As shown, multiple third wires 43 can be conductively joined to the fourth wiring layer 624 of the first wiring 601 and the first wiring layer 621 of the first wiring 601. Thus, the first signal terminal 161 can conduct electricity with the third electrodes 213 of multiple first elements 21A. The composition of the multiple first wires 41 and the multiple third wires 43 can include gold (Au). In addition, the composition of the multiple first wires 41 and the multiple third wires 43 can include, for example, copper or aluminum.

[0077] As Figure 5 shown, multiple first wires 41 can be conductively joined to the third electrodes 213 of multiple second elements 21B and the fourth wiring layer 624 of the second wiring 602. Figure 5 As shown, multiple third wires 43 can be conductively joined to the fourth wiring layer 624 of the second wiring 602 and the first wiring layer 621 of the second wiring 602. Thus, the second signal terminal 162 can conduct electricity with the third electrodes 213 of multiple second elements 21B.

[0078] As Figure 5As shown, a plurality of second wires 42 can be conductively bonded to the fourth electrodes 214 of a plurality of first elements 21A and the second wiring layer 622 of the first wiring 601. Thus, the third signal terminal 171 can be electrically connected to the fourth electrodes 214 of the plurality of first elements 21A. As Figure 5 shown, a plurality of second wires 42 can be conductively bonded to the fourth electrodes 214 of a plurality of second elements 21B and the second wiring layer 622 of the second wiring 602. Thus, the fourth signal terminal 172 can be electrically connected to the fourth electrodes 214 of the plurality of second elements 21B. The composition of the plurality of second wires 42 may include gold. In addition, the composition of the plurality of second wires 42 may include, for example, copper or aluminum.

[0079] As Figure 5 shown, the fourth wire 44 can be conductively bonded to the fifth wiring layer 625 of the first wiring 601 and the first main surface 121A of the first conductive layer 121. Thus, the seventh signal terminal 19 can be electrically connected to the first conductive layer 121. The composition of the fourth wire 44 may include gold. In addition, the composition of the fourth wire 44 may include, for example, copper or aluminum.

[0080] As Figure 5 and Figure 10 shown, the first conduction member 31 can be conductively bonded to the second electrodes 212 of a plurality of first elements 21A and the second main surface 122A of the second conductive layer 122. Thus, the second electrodes 212 of the plurality of first elements 21A can be electrically connected to the second conductive layer 122. The composition of the first conduction member 31 may include copper. The first conduction member 31 may be a metal clip. As Figure 5 shown, the first conduction member 31 may have a main body portion 311, a plurality of first bonding portions 312, a plurality of first connecting portions 313, a second bonding portion 314, and a second connecting portion 315.

[0081] The main body portion 311 may be the main part of the first conduction member 31. As Figure 5 shown, the main body portion 311 may extend in the third direction y. As Figure 9 shown, the main body portion 311 may be configured to span between the first conductive layer 121 and the second conductive layer 122.

[0082] As Figure 10 shown, the plurality of first bonding portions 312 can be respectively bonded to the second electrodes 212 of the plurality of first elements 21A. The plurality of first bonding portions 312 can be respectively opposed to any one of the second electrodes 212 of the plurality of first elements 21A.

[0083] As Figure 5 shown, the plurality of first connecting portions 313 can be connected to the main body portion 311 and the plurality of first bonding portions 312. The plurality of first connecting portions 313 can be separated from each other in the third direction y. As Figure 9As shown, when observing in the third direction y, the plurality of first connecting portions 313 can be inclined in a direction away from the first main surface 121A of the first conductive layer 121 as they approach the main body portion 311 from the plurality of first joining portions 312.

[0084] As Figure 5 and Figure 9 shown, the second joining portion 314 can be joined to the second main surface 122A of the second conductive layer 122. The second joining portion 314 can be opposed to the second main surface 122A. The second joining portion 314 can extend in the third direction y. The dimension of the second joining portion 314 in the third direction y can be configured to be equal to the dimension of the main body portion 311 in the third direction y.

[0085] As Figure 5 and Figure 9 shown, the second connecting portion 315 can be connected to the main body portion 311 and the second joining portion 314. When observing in the third direction y, the second connecting portion 315 can be inclined in a direction away from the second main surface 122A of the second conductive layer 122 as it approaches the main body portion 311 from the second joining portion 314. The dimension of the second connecting portion 315 in the third direction y can be configured to be equal to the dimension of the main body portion 311 in the third direction y.

[0086] As Figure 9 , Figure 10 and Figure 13 shown, the semiconductor device A10 can include a first conductive joining layer 33. The first conductive joining layer 33 can be interposed between the second electrodes 212 of the plurality of first elements 21A and the plurality of first joining portions 312. The first conductive joining layer 33 can electrically join the second electrodes 212 of the plurality of first elements 21A and the plurality of first joining portions 312. The first conductive joining layer 33 is, for example, solder. In addition, the first conductive joining layer 33 can include a sintered body of metal particles.

[0087] As Figure 9 shown, the semiconductor device A10 can include a second conductive joining layer 34. The second conductive joining layer 34 can be interposed between the second main surface 122A of the second conductive layer 122 and the second joining portion 314. The second conductive joining layer 34 can electrically join the second main surface 122A and the second joining portion 314. The second conductive joining layer 34 is, for example, solder. In addition, the second conductive joining layer 34 can include a sintered body of metal particles.

[0088] As Figure 4 and Figure 11As shown, the second conduction component 32 can be conductively joined to the second electrodes 212 of a plurality of second elements 21B and the covering portion 15A of the second input terminal 15. Thus, the second electrodes 212 of the plurality of second elements 21B can be electrically connected to the second input terminal 15. The composition of the second conduction component 32 can include copper. The second conduction component 32 can be a metal clip. As Figure 4 shown, the second conduction component 32 can have a pair of main body portions 321, a plurality of third joining portions 322, a plurality of third connecting portions 323, a pair of fourth joining portions 324, a pair of fourth connecting portions 325, a plurality of intermediate portions 326, and a plurality of cross beam portions 327.

[0089] As Figure 4 shown, the pair of main body portions 321 are located at positions separated from each other in the third direction y. The pair of main body portions 321 can extend in the second direction x. As Figure 8 shown, the pair of main body portions 321 can be arranged parallel to the first main surface 121A of the first conductive layer 121 and the second main surface 122A of the second conductive layer 122. The pair of main body portions 321 are located at positions farther from the first main surface 121A and the second main surface 122A than the main body portion 311 of the first conduction component 31.

[0090] As Figure 4 shown, the plurality of intermediate portions 326 can be located at positions separated from each other in the third direction y and between the pair of main body portions 321 in the third direction y. The plurality of intermediate portions 326 can extend in the second direction x. The dimension of each of the plurality of intermediate portions 326 in the second direction x can be smaller than the dimension of each of the pair of main body portions 321 in the second direction x.

[0091] As Figure 11 shown, the plurality of third joining portions 322 can be respectively joined to the second electrodes 212 of the plurality of second elements 21B. Each of the plurality of third joining portions 322 can be opposed to any one of the second electrodes 212 of the plurality of second elements 21B.

[0092] As Figure 4 and Figure 12 shown, the plurality of third connecting portions 323 can be connected to both sides of the plurality of third joining portions 322 in the third direction y. The plurality of third connecting portions 323 can be connected to any one of the pair of main body portions 321 and the plurality of intermediate portions 326. When observed in the second direction x, the plurality of third connecting portions 323 can be respectively inclined in a direction away from the second main surface 122A of the second conductive layer 122 as they approach any one of the pair of main body portions 321 and the plurality of intermediate portions 326 from any one of the plurality of third joining portions 322.

[0093] As Figure 4 and Figure 8As shown, a pair of fourth engaging portions 324 can engage with the covering portion 15A of the second input terminal 15. The pair of fourth engaging portions 324 can be opposed to the covering portion 15A.

[0094] As Figure 4 and Figure 8 shown, a pair of fourth connecting portions 325 can be connected to the pair of main body portions 321 and the pair of fourth engaging portions 324. When observed in the third direction y, the pair of fourth connecting portions 325 can be inclined in a direction away from the first main surface 121A of the first conductive layer 121 as they get closer to the pair of main body portions 321 from the pair of fourth engaging portions 324.

[0095] As Figure 4 and Figure 13 shown, a plurality of cross beam portions 327 can be positioned along the third direction y. When observed in the first direction z, the plurality of cross beam portions 327 can include regions that respectively overlap with the plurality of first engaging portions 312 of the first conductive member 31. Both sides of the cross beam portion 327 located at the center in the third direction y among the plurality of cross beam portions 327 can be connected to the plurality of intermediate portions 326. Both sides of the remaining two cross beam portions 327 among the plurality of cross beam portions 327 can be connected to any one of the pair of main body portions 321 and any one of the plurality of intermediate portions 326. When observed in the second direction x, the plurality of cross beam portions 327 are convex toward the side where the first main surface 121A of the first conductive layer 121 faces in the first direction z.

[0096] As Figure 9 , Figure 11 and Figure 12 shown, the semiconductor device A10 can include a third conductive bonding layer 35. The third conductive bonding layer 35 can be interposed between the second electrodes 212 of the plurality of second elements 21B and the plurality of third engaging portions 322. The third conductive bonding layer 35 can conductively bond the second electrodes 212 of the plurality of second elements 21B and the plurality of third engaging portions 322. The third conductive bonding layer 35 is, for example, solder. In addition, the third conductive bonding layer 35 can include a calcined body of metal particles.

[0097] As Figure 8 shown, the semiconductor device A10 can include a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 can be interposed between the covering portion 15A of the second input terminal 15 and the pair of fourth engaging portions 324. The fourth conductive bonding layer 36 can conductively bond the covering portion 15A and the pair of fourth engaging portions 324. The fourth conductive bonding layer 36 is, for example, solder. In addition, the fourth conductive bonding layer 36 can include a calcined body of metal particles.

[0098] As Figure 8 , Figure 9 , Figure 12 and Figure 13As shown, the sealing resin 50 can cover the first conductive layer 121, the second conductive layer 122, the plurality of semiconductor elements 21, the first conduction member 31, and the second conduction member 32. The sealing resin 50 can cover at least a part of the insulating layer 71. The sealing resin 50 can cover a part of each of the first input terminal 13, the output terminal 14, and the second input terminal 15. The sealing resin 50 can have electrical insulation properties. For example, the sealing resin 50 can be made of a material including black epoxy resin. As Figure 2 and Figures 6 to 9 shown, the sealing resin 50 can have a top surface 51, a bottom surface 52, a pair of first side surfaces 53, a pair of second side surfaces 54, and a pair of recesses 55.

[0099] As Figure 8 and Figure 9 shown, the top surface 51 can face the same side as the first main surface 121A of the first conductive layer 121 in the first direction z. As Figure 8 and Figure 9 shown, the bottom surface 52 can face the side opposite to the top surface 51 in the first direction z. As Figure 7 shown, the outer surface 812 of the base 81 of the heat dissipation member 80 can be exposed from the bottom surface 52.

[0100] As Figure 2 and Figure 6 shown, a pair of first side surfaces 53 can be located at positions separated from each other in the second direction x. The pair of first side surfaces 53 can face the second direction x and extend in the third direction y. The pair of first side surfaces 53 can be connected to the top surface 51. The exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 can be exposed from one of the pair of first side surfaces 53. The exposed portion 14B of the output terminal 14 can be exposed from the other of the pair of first side surfaces 53.

[0101] As Figure 2 and Figure 7 shown, a pair of second side surfaces 54 can be located at positions separated from each other in the third direction y. The pair of second side surfaces 54 can face opposite sides in the third direction y and extend in the second direction x. The pair of second side surfaces 54 can be connected to the top surface 51 and the bottom surface 52.

[0102] As Figure 2 and Figure 7 shown, a pair of recesses 55 can be recessed from the first side surface 53 of the pair of first side surfaces 53 that exposes the exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 toward the second direction x. The pair of recesses 55 can be configured to reach from the top surface 51 to the bottom surface 52 in the first direction z. The pair of recesses 55 can be located on both sides of the first input terminal 13 in the third direction y.

[0103] Next, the operation and effect of the semiconductor device A10 will be described.

[0104] The semiconductor device A10 may include: a heat dissipation member 80; an insulating layer 71 laminated on the heat dissipation member 80; a first conductive layer 121 located on the side opposite to the heat dissipation member 80 with respect to the insulating layer 71 and joined to the insulating layer 71; and a semiconductor element 21 joined to the first conductive layer 121. The semiconductor element 21 may be electrically connected to the first conductive layer 121. The insulating layer 71 can be located on one side in the first direction z of the heat dissipation member 80. When observed in the first direction z, the insulating layer 71 may protrude outward from the first conductive layer 121. By adopting this structure, the heat generated from the semiconductor element 21 can be conducted to the heat dissipation member 80 via the first conductive layer 121 and the insulating layer 71. Moreover, the creepage distance from the first conductive layer 121 to the heat dissipation member 80 can be increased. Therefore, according to this structure, in the semiconductor device A10, the breakdown voltage of the semiconductor device A10 can be improved.

[0105] According to the structure in which the insulating layer 71 protrudes outward from the first conductive layer 121 when observed in the first direction z, the leakage current flowing from the first conductive layer 121 to the heat dissipation member 80 can be blocked by the insulating layer 71.

[0106] The insulating layer 71 may be in contact with the heat dissipation member 80. By adopting this structure, the heat conducted to the insulating layer 71 can be conducted to the heat dissipation member 80 more quickly.

[0107] The semiconductor device A10 may include a sealing resin 50 covering the first conductive layer 121 and the semiconductor element 21. The sealing resin 50 may cover at least a part of the insulating layer 71. In this case, the insulating layer 71 can be made of a material including resin. By adopting this structure, the affinity between the sealing resin 50 and the insulating layer 71 becomes higher, so that the bonding strength of the insulating layer 71 with respect to the sealing resin 50 can be improved. As a result, the heat dissipation member 80 is not easily detached from the sealing resin 50.

[0108] The heat dissipation member 80 may have a base portion 81 in contact with the insulating layer 71 and a heat dissipation portion 82 located on the side opposite to the insulating layer 71 with respect to the base portion 81 and protruding from the base portion 81 in the first direction z. By adopting this structure, the surface area of the heat dissipation member 80 exposed to the outside is enlarged. Thereby, the heat dissipation performance of the heat dissipation member 80 is improved.

[0109] The insulating layer 71 can cover the entire inner surface 811 of the base 81. By adopting this structure, the distance in the direction orthogonal to the first direction z in the creepage distance from the first conductive layer 121 to the heat dissipation component 80 can be uniformly increased. Thereby, the local reduction of the dielectric breakdown voltage of the semiconductor device A10 can be suppressed.

[0110] The dimension of the first conductive layer 121 in the first direction z can be larger than the dimension of the insulating layer 71 in the first direction z. By adopting this structure, in the first conductive layer 121, heat easily diffuses in the direction orthogonal to the first direction z. Thereby, the thermal resistance of the first conductive layer 121 in the first direction z is reduced.

[0111] The semiconductor device A10 can include a metal layer 72 laminated on the insulating layer 71 and a bonding layer 73 that bonds the metal layer 72 to the first conductive layer 121. By adopting this structure, even when the insulating layer 71 is made of a non-metallic material, the first conductive layer 121 can be firmly bonded to the insulating layer 71.

[0112] The dimension of the insulating layer 71 in the first direction z can be smaller than the dimension of the base 81 in the first direction z. By adopting this structure, the excessive dimension of the semiconductor device A10 in the first direction z can be reduced.

[0113] Second Embodiment:

[0114] Based on Figures 14 to 16 , the semiconductor device A20 of the second embodiment of the present disclosure will be described. In these figures, the same or similar elements as those of the above semiconductor device A10 are denoted by the same reference numerals, and repeated descriptions are omitted.

[0115] The structure of the insulating layer 71 of the semiconductor device A20 can be different from this structure of the semiconductor device A10.

[0116] As Figures 14 to 16 shown, the insulating layer 71 can cover the end face 813 of the base 81 of the heat dissipation component 80. The portion of the insulating layer 71 that covers the end face 813 can be covered by the sealing resin 50.

[0117] Next, the effects of the semiconductor device A20 will be described.

[0118] The semiconductor device A20 may include: a heat dissipation component 80; an insulating layer 71 laminated on the heat dissipation component 80; a first conductive layer 121 located on the side opposite to the heat dissipation component 80 with respect to the insulating layer 71 and joined to the insulating layer 71; and a semiconductor element 21 joined to the first conductive layer 121. The semiconductor element 21 may be electrically connected to the first conductive layer 121. The insulating layer 71 can be located on one side of the heat dissipation component 80 in the first direction z. When observed in the first direction z, the insulating layer 71 may protrude outward from the first conductive layer 121. Therefore, according to this structure, in the semiconductor device A20, the breakdown voltage of the semiconductor device A20 can be improved. The semiconductor device A20 has a structure common to the semiconductor device A10, and thus can achieve the same effect as the semiconductor device A10.

[0119] In the semiconductor device A20, the insulating layer 71 may cover the end face 813 of the base 81 of the heat dissipation component 80. By adopting this structure, the creepage distance from the first conductive layer 121 to the heat dissipation component 80 can be longer than that of the semiconductor device A10. Thereby, the breakdown voltage of the semiconductor device A20 can be more effectively improved.

[0120] Third Embodiment:

[0121] Based on Figures 17 to 19 , the semiconductor device A30 of the third embodiment of the present disclosure will be described. In these figures, the same or similar elements as those of the above semiconductor device A10 are denoted by the same reference numerals, and repeated descriptions are omitted.

[0122] The structure of the insulating layer 71 of the semiconductor device A30 may be different from that of the semiconductor device A10.

[0123] As Figures 17 to 19 shown, the insulating layer 71 may cover the end face 813 of the base 81 of the heat dissipation component 80 and the outer surface 812 of the base 81. The portion of the insulating layer 71 covering the end face 813 is covered by the sealing resin 50. The portion of the insulating layer 71 covering the outer surface 812 can be exposed to the outside from the sealing resin 50.

[0124] Next, the operation and effect of the semiconductor device A30 will be described.

[0125] The semiconductor device A30 may include: a heat dissipation component 80; an insulating layer 71 laminated on the heat dissipation component 80; a first conductive layer 121 located on the side opposite to the heat dissipation component 80 with respect to the insulating layer 71 and joined to the insulating layer 71; and a semiconductor element 21 joined to the first conductive layer 121. The semiconductor element 21 may be electrically connected to the first conductive layer 121. The insulating layer 71 can be located on one side of the heat dissipation component 80 in the first direction z. When observed in the first direction z, the insulating layer 71 may protrude outward from the first conductive layer 121. Therefore, according to this structure, in the semiconductor device A30, the breakdown voltage of the semiconductor device A30 can be improved. The semiconductor device A30 has a structure common to the semiconductor device A10, and thus can achieve the same effects as the semiconductor device A10.

[0126] In the semiconductor device A30, the insulating layer 71 may cover the end face 813 of the base 81 of the heat dissipation component 80 and the outer surface 812 of the base 81. By adopting this structure, the creepage distance from the first conductive layer 121 to the heat dissipation component 80 is longer than that of the semiconductor device A20. Thereby, the breakdown voltage of the semiconductor device A30 can be effectively improved.

[0127] Fourth Embodiment:

[0128] Based on Figures 20 to 24 , the semiconductor device A40 of the fourth embodiment of the present disclosure will be described. In these figures, the same or similar elements as those of the above semiconductor device A10 are denoted by the same reference numerals, and repeated descriptions are omitted.

[0129] The structure of the heat dissipation component 80 of the semiconductor device A40 may be different from that of the semiconductor device A10. The semiconductor device A40 may include a base material 11 and a mounting component 88 instead of the two metal layers 72 and the bonding layer 73.

[0130] As Figures 21 to 23 shown, the heat dissipation component 80 may have a housing 83 and a heat dissipating body 84 instead of the base 81 and the heat dissipating portion 82. The housing 83 may have a hollow portion 831, an inlet 832, and an outlet 833. The hollow portion 831 may be located inside the housing 83. The inlet 832 and the outlet 833 may be connected to the hollow portion 831. The inlet 832 and the outlet 833 may be located on opposite sides with respect to the hollow portion 831 in the third direction y. The heat dissipation component 80 may be configured such that cooling water flows from the inlet 832 through the hollow portion 831 to the outlet 833.

[0131] As Figures 21 to 23 shown, the housing 83 may have a mounting surface 83A facing the first direction z. The mounting surface 83A may face the first conductive layer 121 and the second conductive layer 122. AsFigure 20 As shown, the insulating layer 71 may cover the entire mounting surface 83A.

[0132] As Figures 21 to 23 shown, the hollow portion 831 of the housing 83 may include a rapidly constricted portion 831A. The rapidly constricted portion 831A refers to the portion where the cross-sectional area of the hollow portion 831 is the smallest in the direction orthogonal to the first direction z and in the interval from the inflow port 832 to the outflow port 833.

[0133] As Figures 21 to 23 shown, the heat sink 84 can be received in the rapidly constricted portion 831A of the hollow portion 831 of the housing 83. The heat sink 84 can be connected to the housing 83. As Figure 20 shown, the heat sink 84 may be a plurality of pins separated from each other in the direction orthogonal to the first direction z.

[0134] As Figures 22 to 23 shown, the base material 11 may be located on the side opposite to the plurality of semiconductor elements 21 with the first conductive layer 121 and the second conductive layer 122 sandwiched therebetween in the first direction z. The base material 11 can support the first conductive layer 121 and the second conductive layer 122. The base material 11 may be composed of a DBC (Direct Bonded Copper) substrate. As Figure 23 And Figure 24 shown, the base material 11 may include an insulating layer 111, two metal layers 112, and a heat dissipation layer 113. The base material 11 may be covered with the sealing resin 50 except for a part of the heat dissipation layer 113.

[0135] As Figure 23 And Figure 24 shown, the insulating layer 111 may include a portion interposed between the two metal layers 112 and the heat dissipation layer 113 in the first direction z. The insulating layer 111 may be made of a material with a relatively high thermal conductivity. The insulating layer 111 may be composed of, for example, a ceramic including aluminum nitride (AlN). The insulating layer 111 may also be a structure composed of an insulating resin sheet in addition to the ceramic. The size of the insulating layer 111 in the first direction z may be smaller than the sizes of the first conductive layer 121 and the second conductive layer 122 in the first direction z, respectively.

[0136] As Figures 23 to 24 shown, the two metal layers 112 may be located between the insulating layer 111 and the first conductive layer 121 and the second conductive layer 122 in the first direction z. The two metal layers 112 may be separated from each other in the second direction x. The composition of the two metal layers 112 may include copper. When observed in the first direction z, the two metal layers 112 may be a structure surrounded by the periphery of the insulating layer 111.

[0137] As Figure 23 And Figure 24As shown, the heat dissipation layer 113 can be located on the side opposite to the two metal layers 112 with respect to the insulating layer 111 in the first direction z. The heat dissipation layer 113 can be exposed from the sealing resin 50. The composition of the heat dissipation layer 113 can include copper. The dimension of the heat dissipation layer 113 in the first direction z can be larger than the dimension of the insulating layer 111 in the first direction z. When observed in the first direction z, the heat dissipation layer 113 can be configured to be surrounded by the peripheral edge of the insulating layer 111. The heat dissipation layer 113 can be in contact with the insulating layer 71.

[0138] As Figure 23 shown, the first conductive layer 121 and the second conductive layer 122 can be joined to the base material 11. The first conductive layer 121 and the second conductive layer 122 can be joined to the two metal layers 112 of the base material 11 via the joining layer 123 respectively. The joining layer 123 is solder, for example. In addition, the joining layer 123 can be composed of a solder containing silver (Ag).

[0139] As Figure 20 shown, when observed in the first direction z, the first conductive layer 121 and the second conductive layer 122 can respectively overlap with the constriction portion 831A of the hollow portion 831 of the housing 83. When observed in the first direction z, the first conductive layer 121 and the second conductive layer 122 can each overlap with the heat sink 84.

[0140] As Figures 20 to 23 shown, the mounting member 88 can hold the sealing resin 50 to the heat dissipation member 80. The mounting member 88 can be made of a material including metal. The mounting member 88 can be configured to contact the top surface 51 of the sealing resin 50 and straddle the top surface 51. The mounting member 88 is a leaf spring, for example. The mounting member 88 can be located between the first signal terminal 161 and the second signal terminal 162 in the second direction x. The mounting member 88 can be configured to be mounted to the housing 83 by fastening members 89 on both sides in the third direction y. The fastening members 89 are bolts, for example.

[0141] Next, the operation and effect of the semiconductor device A40 will be described.

[0142] The semiconductor device A40 may include: a heat dissipation component 80; an insulating layer 71 laminated on the heat dissipation component 80; a first conductive layer 121 located on the side opposite to the heat dissipation component 80 with respect to the insulating layer 71 and joined to the insulating layer 71; and a semiconductor element 21 joined to the first conductive layer 121. The semiconductor element 21 may be electrically connected to the first conductive layer 121. The insulating layer 71 can be located on one side of the heat dissipation component 80 in the first direction z. When observed in the first direction z, the insulating layer 71 may protrude outward from the first conductive layer 121. Therefore, according to this structure, in the semiconductor device A40, the breakdown voltage of the semiconductor device A40 can be improved. The semiconductor device A40 has a structure common to the semiconductor device A10, and thus can achieve the same effects as the semiconductor device A10.

[0143] In the semiconductor device A40, the heat dissipation component 80 may have a housing 83 in contact with the insulating layer 71. The housing 83 may have a hollow portion 831 inside the housing 83, and an inlet 832 and an outlet 833 communicating with the hollow portion 831. When observed in the first direction z, the first conductive layer 121 can overlap with the hollow portion 831. By adopting this structure, cooling water can flow in the hollow portion 831, and thus the cooling efficiency of the semiconductor device A40 can be improved.

[0144] The hollow portion 831 of the housing 83 may include a constriction portion 831A having the smallest cross-sectional area in the interval from the inlet 832 to the outlet 833 in a direction orthogonal to the first direction z. When observed along the first direction z, the first conductive layer 121 may overlap with the constriction portion 831A. By adopting this structure, the flow rate of the cooling water in the constriction portion 831A can be increased, and thus the cooling efficiency of the semiconductor device A40 can be further improved.

[0145] The heat dissipation component 80 may include a heat dissipation body 84 housed in the constriction portion 831A of the housing 83 and connected to the housing 83. When observed in the first direction z, the first conductive layer 121 may overlap with the heat dissipation body 84. By adopting this structure, the contact area of the heat dissipation component 80 with respect to the cooling water is enlarged, and thus the cooling efficiency of the semiconductor device A40 can be improved.

[0146] The present disclosure is not limited to the above embodiments. The specific structures of each part of the present disclosure can be freely changed in various designs.

[0147] The present disclosure includes the embodiments described in the following appended notes.

[0148] Appended Note 1.

[0149] A semiconductor device, comprising:

[0150] a heat dissipation component;

[0151] An insulating layer, which is located on one side of the heat dissipation component in the first direction and laminated on the heat dissipation component;

[0152] A conductive layer, which is located on the side opposite to the heat dissipation component with respect to the insulating layer and joined to the insulating layer; and

[0153] A semiconductor element, which is joined to the conductive layer,

[0154] The semiconductor element is electrically connected to the conductive layer,

[0155] When observed in the first direction, the insulating layer extends outward more than the conductive layer..

[0156] Supplementary Note 2.

[0157] The semiconductor device according to Supplementary Note 1, wherein,

[0158] The insulating layer is in contact with the heat dissipation component.

[0159] Supplementary Note 3.

[0160] The semiconductor device according to Supplementary Note 2, wherein,

[0161] The insulating layer is made of a material including resin.

[0162] Supplementary Note 4.

[0163] The semiconductor device according to Supplementary Note 2, wherein,

[0164] The size of the conductive layer in the first direction is larger than the size of the insulating layer in the first direction.

[0165] Supplementary Note 5.

[0166] The semiconductor device according to Supplementary Note 4, wherein,

[0167] The semiconductor element is electrically joined to the conductive layer.

[0168] Supplementary Note 6.

[0169] The semiconductor device according to any one of Supplementary Notes 2 to 5, wherein,

[0170] It further includes a sealing resin that covers the conductive layer and the semiconductor element.

[0171] Supplementary Note 7.

[0172] The semiconductor device according to Supplementary Note 6, wherein,

[0173] The heat dissipation component has: a base portion that abuts against the insulating layer; and a heat dissipation portion that is located on a side opposite to the insulating layer with respect to the base portion and protrudes from the base portion in the first direction.

[0174] The sealing resin covers at least a part of the insulating layer.

[0175] Supplementary Note 8.

[0176] The semiconductor device according to Supplementary Note 7, wherein

[0177] The base portion has an outer surface that faces the first direction and from which the heat dissipation portion protrudes.

[0178] The outer surface is exposed from the sealing resin.

[0179] Supplementary Note 9.

[0180] The semiconductor device according to Supplementary Note 8, wherein

[0181] The base portion has an end surface that faces a direction orthogonal to the first direction.

[0182] When viewed from a direction orthogonal to the first direction, the sealing resin overlaps with the end surface.

[0183] Supplementary Note 10.

[0184] The semiconductor device according to Supplementary Note 9, wherein

[0185] The base portion has an inner surface that faces a side opposite to the outer surface in the first direction.

[0186] The insulating layer covers the entire inner surface.

[0187] Supplementary Note 11.

[0188] The semiconductor device according to Supplementary Note 10, wherein

[0189] The insulating layer covers the end surface.

[0190] Supplementary Note 12.

[0191] The semiconductor device according to Supplementary Note 11, wherein

[0192] The insulating layer covers the outer surface.

[0193] Supplementary Note 13.

[0194] The semiconductor device according to Supplementary Note 7, wherein

[0195] The dimension of the insulating layer in the first direction is smaller than the dimension of the base portion in the first direction.

[0196] Supplementary Note 14.

[0197] The semiconductor device according to Supplementary Note 13 further includes:

[0198] a metal layer laminated on the insulating layer; and

[0199] a bonding layer that bonds the metal layer and the conductive layer.

[0200] Supplementary Note 15.

[0201] The semiconductor device according to Supplementary Note 6, wherein

[0202] the heat dissipation component has a housing in contact with the insulating layer,

[0203] the housing includes: a hollow portion located inside the housing; and an inlet and an outlet communicating with the hollow portion,

[0204] when observed in the first direction, the conductive layer overlaps with the hollow portion.

[0205] Supplementary Note 16.

[0206] The semiconductor device according to Supplementary Note 15, wherein

[0207] the hollow portion includes a constriction portion where the cross-sectional area becomes minimum in a direction orthogonal to the first direction and in an interval from the inlet to the outlet,

[0208] when observed in the first direction, the conductive layer overlaps with the constriction portion.

[0209] Supplementary Note 17.

[0210] The semiconductor device according to Supplementary Note 16, wherein

[0211] the heat dissipation component has a heat dissipation body received in the constriction portion and connected to the housing,

[0212] when observed in the first direction, the conductive layer overlaps with the heat dissipation body.

[0213] Symbol Explanation

[0214] A10, A20, A30, A40 - semiconductor devices; 11 - substrate; 111 - insulating layer; 112 - metal layer; 113 - heat dissipation layer; 121 - first conductive layer; 121A - first main surface; 122 - second support layer; 122A - second main surface; 123 - bonding layer; 13 - first input terminal; 13A - covering portion; 13B - exposed portion; 14 - output terminal; 14A - covering portion; 14B - exposed portion; 15 - second input terminal; 15A - covering portion; 15B - exposed portion; 161 - first signal terminal; 162 - second signal terminal; 171 - third signal terminal; 172 - fourth signal terminal; 181 - fifth signal terminal; 182 - sixth signal terminal; 19 - seventh signal terminal; 21 - semiconductor element; 21A - first element; 21B - second element; 211 - first electrode; 212 - second electrode; 213 - third electrode; 214 - fourth electrode; 22 - thermistor; 23 - conductive bonding layer; 31 - first conduction component; 311 - main body portion; 312 - first bonding portion; 313 - first connection portion; 314 - second bonding portion; 315 - second connection portion; 32 - second conduction component; 321 - main body portion; 322 - third bonding portion; 323 - third connection portion; 324 - fourth bonding portion; 325 - fourth connection portion; 326 - intermediate portion; 327 - cross beam portion; 33 - first conductive bonding layer; 34 - second conductive bonding layer; 35 - third conductive bonding layer; 36 - fourth conductive bonding layer; 41 - first wire; 42 - second wire; 43 - third wire; 44 - fourth wire; 50 - sealing resin; 51 - top surface; 52 - bottom surface; 53 - first side surface; 54 - second side surface; 55 - recess; 60 - control wiring; 601 - first wiring; 602 - second wiring; 61 - insulating layer; 62 - wiring layer; 621 - first wiring layer; 622 - second wiring layer; 623 - third wiring layer; 624 - fourth wiring layer; 625 - fifth wiring layer; 63 - metal layer; 64 - sleeve; 641 - end face; 68 - first adhesive layer; 69 - second adhesive layer; 71 - insulating layer; 72 - metal layer; 73 - bonding layer; 80 - heat dissipation component; 81 - base; 811 - inner surface; 812 - outer surface; 813 - end face; 82 - heat dissipation portion; 83 - housing; 83A - mounting surface; 831 - hollow portion; 831A - sudden constriction portion; 832 - inlet; 833 - outlet; 84 - heat sink; 88 - mounting component; 89 - fastening component; z - first direction; x - second direction; y - third direction.

Claims

1. A semiconductor device, characterized in that, comprising: a heat dissipation component; an insulating layer, which is located on one side of the heat dissipation component in a first direction and is laminated on the heat dissipation component; a conductive layer, which is located on the side opposite to the heat dissipation component with respect to the insulating layer and is joined to the insulating layer; and a semiconductor element, which is joined to the conductive layer, the semiconductor element is electrically connected to the conductive layer, when observed in the first direction, the insulating layer extends outward more than the conductive layer.

2. The semiconductor device according to claim 1, characterized in that, the insulating layer is in contact with the heat dissipation component.

3. The semiconductor device according to claim 2, characterized in that, the insulating layer is made of a material including resin.

4. The semiconductor device according to claim 2, characterized in that, the size of the conductive layer in the first direction is larger than the size of the insulating layer in the first direction.

5. The semiconductor device according to claim 4, characterized in that, the semiconductor element is electrically joined to the conductive layer.

6. The semiconductor device according to any one of claims 2 to 5, characterized in that, further comprising a sealing resin that covers the conductive layer and the semiconductor element.

7. The semiconductor device according to claim 6, characterized in that, the heat dissipation component has: a base portion that is in contact with the insulating layer; and a heat dissipation portion that is located on the side opposite to the insulating layer with respect to the base portion and protrudes from the base portion in the first direction, the sealing resin covers at least a part of the insulating layer.

8. The semiconductor device according to claim 7, characterized in that, the base portion has an outer surface facing the first direction and from which the heat dissipation portion protrudes, the outer surface is exposed from the sealing resin.

9. The semiconductor device according to claim 8, characterized in that, the base portion has an end surface facing a direction orthogonal to the first direction, when observed from a direction orthogonal to the first direction, the sealing resin overlaps with the end surface.

10. The semiconductor device according to claim 9, characterized in that, the base portion has an inner surface facing the side opposite to the outer surface in the first direction, the insulating layer covers the entire inner surface.

11. The semiconductor device according to claim 10, characterized in that, the insulating layer covers the end surface.

12. The semiconductor device according to claim 11, characterized in that, the insulating layer covers the outer surface.

13. The semiconductor device according to claim 7, characterized in that, the size of the insulating layer in the first direction is smaller than the size of the base portion in the first direction.

14. The semiconductor device according to claim 13, characterized in that, further comprising: a metal layer laminated on the insulating layer; and a bonding layer that bonds the metal layer and the conductive layer.

15. The semiconductor device according to claim 6, characterized in that, the heat dissipation component has a housing in contact with the insulating layer, the housing includes: a hollow portion located inside the housing; and An inflow port and an outflow port, which are in communication with the hollow portion When observed in the first direction, the conductive layer overlaps with the hollow portion 16. The semiconductor device according to claim 15 Characterized in that The hollow portion includes a constriction portion where the cross-sectional area becomes the smallest in a direction orthogonal to the first direction and in the section from the inflow port to the outflow port When observed in the first direction, the conductive layer overlaps with the constriction portion 17. The semiconductor device according to claim 16 Characterized in that The heat dissipation component has a heat dissipation body, which is received in the constriction portion and connected to the housing When observed in the first direction, the conductive layer overlaps with the heat dissipation body

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